Side storage havimg multiple purge gas injection ports

Abstract

A side storage equipped with multiple purge gas nozzles includes a wafer chamber having a receiving space for receiving a wafer, a purge gas supply line for supplying purge gas injected into the receiving space, a purge gas delivery space having an introductory purge gas nozzle formed therein for receiving purge gas from the purge gas supply line and injecting the supplied purge gas, and a purge gas storage space having a final purge gas nozzle formed therein for receiving and storing purge gas injected from the introductory purge gas nozzle and injecting the stored purge gas into the receiving space.

Description

Technology Field

[0001] The present invention relates to a side storage having multiple purge gas nozzles, and more specifically, to a side storage having multiple purge gas nozzles that stores purge gas injected from an introduction purge gas nozzle and then injects it into a wafer through a final purge gas nozzle to ensure even injection into all wafers. Background Technology

[0002] Generally, semiconductor devices are manufactured by sequentially repeating various unit processes such as deposition, photolithography, etching, and ion implantation, and each unit process is performed using various source gases in a high vacuum.

[0003] Wafers that have completed a unit process are transferred to an equipment front end module (EFEM) and stored in various substrate carriers, such as a front opening unified pod (FOUP), so that they can be transferred to the next process.

[0004] At this time, when residual gas from a unit process performed in a high vacuum state is introduced into a substrate transfer module maintained at atmospheric pressure along with the wafer, the residual gas combines with moisture or foreign substances in the atmosphere to form contaminants (hereinafter referred to as fumes), and the fumes adhere to the surface of the wafer, causing various defects such as bridge defects between patterns and acting as a cause of reduced yield.

[0005] To prevent this, conventional substrate transfer modules retain the wafer, after the process is completed, in a side storage capable of removing fumes or residual gases for a certain period of time before transferring it to the substrate carrier to remove fumes and residual gases formed on the substrate, and then transfer it to the substrate carrier (see Korean Registered Patent No. 10-2080015).

[0006] In this regard, wafers are loaded vertically in wafer cassettes of side storage, and purge gas is injected into the loaded wafers to remove fumes or residual gases from the wafers.

[0007] However, there are cases where fumes and residual gases are not effectively removed from the loaded wafers because the amount of purge gas sprayed to the upper wafer and the lower wafer on the wafer cassette is different. The problem to be solved

[0008] To solve these problems, there is a need for a side storage equipped with multiple purge gas nozzles that evenly spray purge gas onto all wafers stacked along the vertical direction, thereby ensuring effective removal of fumes and residual gas on the wafers regardless of the wafer stacking position.

[0009] The problem that the present invention aims to solve is to provide a side storage equipped with multiple purge gas nozzles, which stores the purge gas injected from an introduction purge gas nozzle and then injects it into a wafer through a final purge gas nozzle, thereby ensuring even injection into all wafers.

[0010] The problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0011] A side storage having multiple purge gas nozzles according to an embodiment of the present invention for solving the above problem comprises: a wafer chamber having a receiving space for receiving a wafer; a purge gas supply line for supplying purge gas injected into the receiving space; a purge gas delivery space having an introductory purge gas nozzle formed therein for receiving purge gas from the purge gas supply line and injecting the supplied purge gas; and a purge gas storage space having a final purge gas nozzle formed therein for receiving and storing purge gas injected from the introductory purge gas nozzle and injecting the stored purge gas into the receiving space. Effects of the invention

[0012] According to the present invention, a side storage having multiple purge gas nozzles can be provided, which stores the purge gas injected from an introduction purge gas nozzle and then injects it into a wafer through a final purge gas nozzle to ensure even injection into all wafers. Brief explanation of the drawing

[0013] FIG. 1 is a front perspective view of a side storage equipped with multiple purge gas nozzles according to one embodiment of the present invention. FIGS. 2 to 4 are side cross-sectional views of a purge gas injection module including a wafer chamber and a plurality of first purge gas injection ports. FIG. 5 is a side cross-sectional view of a purge gas injection module including a wafer chamber and one primary purge gas injection port. Figure 6 is a diagram showing that the injection path of the first purge gas nozzle and the injection path of the second purge gas nozzle do not coincide. Figure 7 is a diagram showing the injection direction of the first purge gas nozzle and the injection direction of the second purge gas nozzle being perpendicular. Figure 8 is a diagram showing the injection direction of the first purge gas nozzle and the injection direction of the second purge gas nozzle in opposite directions. Specific details for implementing the invention

[0014] The present invention is not limited to the embodiments disclosed below but may be implemented in various different forms, and these embodiments are provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention.

[0015] In this specification, the singular form includes the plural form unless specifically stated otherwise in the text. As used in this specification, "comprises" and / or "comprising" do not exclude the presence or addition of one or more other components, steps, and actions in addition to the mentioned components, steps, and actions.

[0016] With reference to FIGS. 1 to 8, a side storage having multiple purge gas nozzles according to one embodiment of the present invention will be described.

[0017] FIG. 1 is a front perspective view of a side storage having multiple purge gas nozzles according to an embodiment of the present invention. FIG. 2 to 4 are side cross-sectional views of a purge gas injection module including a wafer chamber and a plurality of first purge gas nozzles. FIG. 5 is a side cross-sectional view of a purge gas injection module including a wafer chamber and one first purge gas nozzle.

[0018] Fig. 6 is a diagram showing that the injection path of the first purge gas nozzle and the injection path of the second purge gas nozzle do not coincide. Fig. 7 is a diagram showing that the injection direction of the first purge gas nozzle and the injection direction of the second purge gas nozzle are perpendicular. Fig. 8 is a diagram showing that the injection direction of the first purge gas nozzle and the injection direction of the second purge gas nozzle are opposite directions.

[0019] Referring to FIGS. 1 to 8, a side storage (10) having multiple purge gas injection ports according to one embodiment of the present invention includes a wafer chamber (20), a purge gas injection module (40), and a chamber support frame (60).

[0020] The wafer chamber (20) is a chamber in which a wafer (50) on which a predetermined semiconductor process has been performed is accommodated in a receiving space (35) and a process of removing contaminants (or fumes) on the wafer (50) is performed.

[0021] When a wafer on which a semiconductor unit process has been performed is introduced into an Equipment Front End Module (EFEM), residual gas generated during the semiconductor unit process may be introduced into the EFEM along with the wafer, and this residual gas may combine with moisture or foreign substances in the atmosphere to form contaminants (or fumes).

[0022] Since such fumes can adhere to the surface of the wafer (50) and cause various defects such as bridge defects between patterns and reduce yield, a fume removal operation can be performed on the wafer (50) contained within the wafer chamber (20) to prevent this.

[0023] For this fume removal operation, the purge gas injection module (40) described below can supply purge gas (P) used for fume removal into the wafer chamber (20), and the supplied purge gas (P) can be injected into the wafer (50) through the purge gas injection port.

[0024] Additionally, a wafer cassette (35) may be installed inside the wafer chamber (20), and the wafer cassette (35) may support a wafer (50) introduced into the wafer chamber (20).

[0025] By supporting the wafer cassette (35) with the wafer (50), the wafer (50) can be accommodated within the wafer chamber (20), and a fume removal operation can be performed on the wafer (50).

[0026] Additionally, a fume exhaust section may be formed inside the wafer chamber (20), and the fume exhausted by the purge gas (P) may be discharged from the wafer chamber (20) through the fume exhaust section.

[0027] The purge gas injection module (40) is a module that injects purge gas (P) used for fume removal into the wafer chamber (20).

[0028] This purge gas injection module (40) may include a purge gas supply line (90), a purge gas delivery space (80), and a purge gas storage space (70).

[0029] The purge gas supply line (90) is a unit that supplies purge gas (P) to be injected into the receiving space (30) of the wafer chamber (20).

[0030] One end of the purge gas supply line (90) may be connected to a purge gas source within the chamber support frame (60) described later, and the other end may be connected to a purge gas delivery space (80) described later.

[0031] Accordingly, the purge gas (P) provided from the purge gas source can be supplied to the purge gas delivery space (80) through the purge gas supply line (90).

[0032] Meanwhile, when the purge gas supply line (90) is in communication with the purge gas delivery space (80), the purge gas supply line (90) can be connected to various points of the purge gas delivery space (80) (see FIGS. 2 to 4).

[0033] The purge gas delivery space (80) is a component that receives purge gas (P) from the purge gas supply line (90) and sprays the supplied purge gas (P).

[0034] More specifically, the purge gas delivery space (80) can be connected to the purge gas supply line (90), and accordingly, can receive and temporarily store purge gas (P) from the purge gas supply line (90).

[0035] Additionally, an introduction purge gas nozzle (85) may be formed in the purge gas delivery space (80), and accordingly, the introduction purge gas nozzle (85) can deliver the purge gas (P) supplied to the purge gas delivery space (80) to the purge gas storage space (70) described later.

[0036] At this time, as shown in FIGS. 2 to 5, the introduction purge gas nozzle (85) may be one or multiple.

[0037] When there is only one introduction purge gas nozzle (85), the purge gas (P) can be filled into the purge gas storage space (70) relatively slowly (see FIG. 5), and conversely, when there are multiple introduction purge gas nozzles (85), the purge gas (P) can be filled into the purge gas storage space (70) relatively quickly (see FIG. 2 to 4).

[0038] Accordingly, depending on the situation, the number of introduction purge gas injection nozzles (85) can be adjusted to form a purge gas delivery space (80).

[0039] The purge gas storage space (70) is a component that receives and stores purge gas (P) injected from the introduction purge gas injection port (85) and injects the stored purge gas (P) into the receiving space (30).

[0040] Here, the purge gas delivery space (80) can be located inside the purge gas storage space (70).

[0041] More specifically, the introduction purge gas nozzle (85) can inject purge gas (P) into the purge gas storage space (70), and the purge gas storage space (70) can store the injected purge gas (P).

[0042] Additionally, a final purge gas nozzle (75) may be formed in the purge gas storage space (70), and accordingly, the final purge gas nozzle (75) can spray the purge gas (P) stored in the purge gas storage space (70) into the receiving space (30) of the wafer chamber (20).

[0043] Therefore, the purge gas (P) injected into the receiving space (30) by the final purge gas nozzle (75) can remove fumes from the wafer (50).

[0044] Meanwhile, in one form, as illustrated in FIGS. 2 to 5, the introduction purge gas nozzle (85) may be a first purge gas nozzle, and the final purge gas nozzle (75) may be a second purge gas nozzle.

[0045] That is, there may be two purge gas receiving spaces: a purge gas delivery space (80) and a purge gas storage space (70).

[0046] In another form, there may be three or more purge gas receiving spaces, and accordingly, the introduction purge gas nozzle is the first purge gas nozzle (85), and the final purge gas nozzle may be the nth purge gas nozzle (where n is a natural number greater than or equal to 3).

[0047] The final purge gas nozzles (75) may be multiple, and in particular, the multiple final purge gas nozzles (75) may be formed along the height of the purge gas storage space (70).

[0048] In this regard, conventionally, a purge gas injection space in which a purge gas injection port is formed received purge gas from a purge gas supply line.

[0049] At this time, since the purge gas supply line is connected to the purge gas injection space at a certain point, when the purge gas is supplied to the purge gas injection space, the purge gas flows in from one side of the purge gas injection space, and accordingly, the purge gas nozzle located closer to the point of inflow injects a larger amount of purge gas into the receiving space of the wafer chamber than the purge gas nozzle located further away.

[0050] For example, the purge gas was introduced from the bottom of the purge gas injection space, rose to the top, and was injected into the receiving space through the purge gas nozzle.

[0051] Accordingly, the purge gas nozzle formed at the bottom sprays more purge gas into the receiving space than the one formed at the top. In this case, while sufficient purge gas can be supplied to the wafers located at the bottom among the wafers vertically received in the wafer cassette, a problem may arise where the amount of purge gas becomes insufficient as it moves upward.

[0052] Considering these points, the present invention can solve this by providing a purge gas storage space (70) separately from the purge gas delivery space (80), and also solves this by adjusting the injection direction and injection path of the first purge gas injection port (85) and the second purge gas injection port (75).

[0053] First, looking at the solution through the purge gas storage space (70) through FIGS. 2 to 5, the present invention allows the purge gas (P) injected from the first purge gas injection port (85) to be injected into the purge gas storage space (70) and stored, instead of the first purge gas injection port (85) directly injecting the purge gas (P) into the receiving space (30).

[0054] Even if the purge gas (P) is injected and introduced from one side of the purge gas storage space (70), the purge gas (P) can be injected into the receiving space (30) through the second purge gas injection port (75) after being stored entirely in the purge gas storage space (70) by diffusion or convection.

[0055] Accordingly, regardless of how far the second purge gas nozzle (75) is from the point of inflow of purge gas or at what height the second purge gas nozzle (75) is located, a similar amount of purge gas (P) can be injected into the receiving space (30) through the second purge gas nozzle (75), and accordingly, a similar amount of purge gas (P) can be injected for all wafers (50), so that the entire wafer (50) can be evenly cleaned.

[0056] Additionally, as described above, the purge gas delivery space (80) can be located inside the purge gas storage space (70).

[0057] Through this, the purge gas (P) that exits the purge gas delivery space (80) and flows into the purge gas storage space (70) can be stored while rapidly spreading throughout the purge gas storage space (70).

[0058] Next, looking at the solution for adjusting the injection paths of the first purge gas nozzle (85) and the second purge gas nozzle (75) through FIG. 6, the injection path of the second purge gas nozzle (75) and the injection path of the first purge gas nozzle (85) may not coincide.

[0059] Figure 6 shows that the first purge gas nozzle (85) and the second purge gas nozzle (75) are positioned in a zigzag pattern, so the injection paths do not coincide.

[0060] In this way, as the injection path is misaligned, the purge gas (P) injected from the first purge gas injection port (85) is not stored in the purge gas storage space (70) and is prevented from being injected directly into the receiving space (30) through the second purge gas injection port (75).

[0061] Additionally, as shown in FIG. 7, regarding the solution for controlling the injection direction of the first purge gas nozzle (85) and the second purge gas nozzle (75), the injection direction of the second purge gas nozzle (75) and the injection direction of the first purge gas nozzle (85) can be perpendicular.

[0062] Thus, as the injection direction is perpendicular, the purge gas (P) injected from the first purge gas nozzle (85) cannot go directly toward the second purge gas nozzle (75), but instead can be stored in the purge gas storage space (70).

[0063] Also, looking at FIG. 8, the injection direction of the second purge gas nozzle (75) and the injection direction of the first purge gas nozzle (85) may be opposite directions.

[0064] Thus, as the injection direction is opposite, the purge gas (P) injected from the first purge gas nozzle (85) cannot go directly toward the second purge gas nozzle (75), but instead can be stored in the purge gas storage space (70).

[0065] In summary, the present invention prevents the purge gas (P) supplied through the purge gas supply line (90) from being sprayed directly into the receiving space (30), thereby allowing the purge gas (P) to be sprayed evenly over all wafers (50).

[0066] The chamber support frame (60) forms the lower part of the side storage (10) and is a frame that supports the wafer chamber (20) by having the wafer chamber (20) placed on its upper surface.

[0067] Additionally, a purge gas source connected to a purge gas supply line (90) and a purge gas exhaust unit for exhausting purge gas (P) containing fumes may be installed inside the chamber support frame (60).

[0068] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0069] 10: Side storage 20: Wafer chamber 30: Storage space 35: Wafer cassette 40: Purge gas injection module 50: Wafer 60: Chamber support frame 70: Purge gas storage space 75: Final purge gas nozzle 80: Purge gas delivery space 85: Introductory purge gas nozzle 90: Purge gas supply line

Claims

Claim 1 A side storage having multiple purge gas nozzles, comprising: a wafer chamber having a receiving space for receiving a wafer; a purge gas supply line for supplying purge gas injected into the receiving space; a purge gas delivery space having an introductory purge gas nozzle formed therein for receiving the purge gas from the purge gas supply line and injecting the supplied purge gas; and a purge gas storage space having a final purge gas nozzle formed therein for receiving and storing the purge gas injected from the introductory purge gas nozzle and injecting the stored purge gas into the receiving space, wherein the purge gas delivery space is located inside the purge gas storage space. Claim 2 delete Claim 3 A side storage having multiple purge gas nozzles, wherein, in claim 1, the final purge gas nozzles are a plurality of times, and the plurality of final purge gas nozzles are formed along the height of the purge gas storage space. Claim 4 A side storage having multiple purge gas nozzles, wherein, in claim 1, the introduction purge gas nozzle is a first purge gas nozzle and the final purge gas nozzle is a second purge gas nozzle. Claim 5 A side storage having multiple purge gas nozzles according to claim 4, wherein the injection path of the second purge gas nozzle and the injection path of the first purge gas nozzle do not coincide. Claim 6 A side storage unit having multiple purge gas nozzles, wherein, in claim 4, the injection direction of the second purge gas nozzle and the injection direction of the first purge gas nozzle are perpendicular. Claim 7 A side storage having multiple purge gas nozzles according to claim 4, wherein the injection direction of the second purge gas nozzle and the injection direction of the first purge gas nozzle are opposite directions.

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