display device

Abstract

The objective of the present invention is to obtain a highly reliable insulating film that is less prone to cracking in the wiring or insulating film due to the difference in thermal stress between the insulating film or protective film for wiring insulation and the inorganic metal wiring or inorganic light-emitting diode chip or substrate. Accordingly, the present invention provides a display device having at least a metal wiring, a cured film, an inorganic insulating film, and a plurality of light-emitting elements, wherein the cured film is a film formed by curing a resin composition containing (A) a resin, and the light-emitting element is an inorganic light-emitting diode having a pair of electrode terminals on one side, wherein the pair of electrode terminals are connected to a plurality of metal wirings extending into the cured film and the inorganic insulating film, and the plurality of metal wirings maintain electrical insulation between them by the cured film and the inorganic insulating film, and the present invention provides a display device having a plurality of layers of the cured film, and wherein the inorganic insulating film is arranged to be in contact with at least a portion between the layers of the plurality of cured films.

Description

Technology Field

[0001] The present invention relates to a display device such as an LED display. Background Technology

[0002] Recently, from the perspective of further enhancing the performance of displays, LED displays—which constitute a display by arranging Light Emitting Diodes (hereinafter referred to as LEDs) in the same number as pixels—are attracting attention as a new display technology following liquid crystal, plasma, and organic EL displays. In particular, Mini LED displays, in which the size of the LEDs serving as the light source is reduced from the conventional 1 mm to 100–700 µm, and Micro LED displays, which are miniaturized to less than 100 µm, are receiving attention, and active research and development is being conducted. The main characteristics of Mini LED and Micro LED displays include high contrast, high-speed response, low power consumption, and wide viewing angles. Therefore, wide deployment is expected not only for conventional televisions, smartphones, and wearable displays including smartwatches, but also for new applications with high future potential, such as signage, AR, VR, and even transparent displays capable of displaying spatial images.

[0003] Various forms have been proposed for LED display devices toward practical application or high performance, and forms have been proposed in which micro LEDs are placed on a multilayer flexible circuit board (see Patent Document 1), and forms in which bank layers and trace lines are formed on a display substrate, and micro LEDs and micro driver chips are placed thereon (see Patent Document 2). In addition, a form has been proposed in which a planarization film is formed on a growth substrate in which a light-emitting element body having electrode pads is integrally formed, the planarization film on the electrode pads is removed to expose the electrode pads, an outer electrode pad connected to the electrode pads is formed on the planarization film, and the outer electrode pads are arranged to face the circuit-side electrode portions with respect to a circuit board in which circuit-side electrode portions are formed, thereby electrically connecting the outer electrode pads and the circuit-side electrode portions (see Patent Document 3). Prior art literature

[0004] Japanese Patent Publication No. 2019-153812 Japanese Patent Publication No. 2020-52404 Japanese Patent Publication No. 2020-68313 The problem to be solved

[0005] Since LED display devices require high temperatures of 200°C or higher during the manufacturing process, there was a problem where the wiring or insulating film was broken due to the difference in thermal stress between the organic insulating film or protective film and the inorganic metal wiring or inorganic light-emitting diode chip and substrate, resulting in insufficient reliability. means of solving the problem

[0006] To solve the above problem, the present invention has the following configuration.

[0007] A display device having at least metal wiring, a cured film, an inorganic insulating film, and a plurality of light-emitting elements, wherein the cured film is a film formed by curing a resin composition comprising (A) a resin, and the light-emitting element is an inorganic light-emitting diode having a pair of electrode terminals on one side, wherein the pair of electrode terminals are connected to a plurality of metal wirings extending into the cured film and the inorganic insulating film, and the plurality of metal wirings maintain electrical insulation between them by the cured film and the inorganic insulating film, wherein the cured film has a plurality of layers, and the inorganic insulating film is arranged to be in contact with at least a portion between the layers of the plurality of cured films. Effects of the invention

[0008] The display device of the present invention can provide a display device that has high light extraction efficiency, sufficient brightness, and a low defect rate even after a reliability test, which is an accelerated test of actual use. Brief explanation of the drawing

[0009] FIG. 1 is a front cross-sectional view showing one form of the display device of the present invention. FIG. 2 is a front enlarged cross-sectional view (upper part) of designated area A and a bottom view (lower part) of designated area A excluding the light-emitting element. FIG. 3 is an enlarged cross-sectional view of the upper surface of designated area B (upper part), a cross-sectional view excluding wiring in a plane orthogonal to the front of designated area B (middle part), and a bottom view excluding the opposing substrate of designated area B (lower part). FIG. 4 is a front cross-sectional view showing one form of a display device having a reflective film of the present invention installed. FIG. 5 is a front cross-sectional view showing one form of a display device having a partition installed according to the present invention. FIG. 6 is a front cross-sectional view showing one form of a display device in which a partition is installed in the cured film of the present invention. FIG. 7 is a front cross-sectional view showing one form of a display device having a reflective film and a partition wall installed according to the present invention. FIG. 8 is a front cross-sectional view showing one form of a display device in which a partition is installed in the cured film of the present invention and a reflective film is installed thereon. FIG. 9 is a front cross-sectional view of one form of a display device having a driving element placed in a cured film of the present invention. FIG. 10 is a front cross-sectional view of one form of a display device of another configuration in which a driving element is placed in the cured film of the present invention. FIG. 11 is a front cross-sectional view showing another form of the display device of the present invention. FIG. 12 is a front cross-sectional view showing another form of the display device of the present invention. FIG. 13 is a cross-sectional view of the manufacturing process of one form of the display device of the present invention. FIG. 14 is a cross-sectional view of the manufacturing process of one type of display device with a partition installed according to the present invention. FIG. 15 is a cross-sectional view of the manufacturing process of one type of display device with a reflective wall installed according to the present invention. FIG. 16 is a cross-sectional view of the manufacturing process of another form of the display device of the present invention. FIG. 17 is a cross-sectional view of the manufacturing process of another form of the display device of the present invention. FIG. 18 is a cross-sectional view of the manufacturing process of another form of the display device of the present invention. FIG. 19 is a cross-sectional view of the manufacturing process of another example of the display device of the present invention. FIG. 20 is a cross-sectional view of the manufacturing process of one type of the display device of the present invention in which a conductive film is installed. FIG. 21 is a cross-sectional view of the manufacturing process of one type of the display device of the present invention in which a light-blocking part is installed. FIG. 22 is a front cross-sectional view showing one form of the display device of the present invention in which a light-blocking part is installed. FIG. 23 is a front cross-sectional view showing one form of the display device of the present invention with a conductive film installed. FIG. 24 is a front cross-sectional view showing another form of the display device of the present invention in which a conductive film is installed. FIG. 25 is a front cross-sectional view showing another form of the display device of the present invention in which a conductive film is installed. FIG. 26 is a front cross-sectional view showing another form of the display device of the present invention in which a conductive film is installed. FIG. 27 is a front cross-sectional view of one form of the display device of the present invention using another example of a light-emitting element. FIG. 28 is a front cross-sectional view showing another form of the display device of the present invention in which a conductive film is installed. FIG. 29 is a front cross-sectional view showing another form of the display device of the present invention in which a conductive film is installed. Specific details for implementing the invention

[0010] Hereinafter, preferred embodiments of the display device of the present invention will be described in detail, but the present invention is not limited to the following embodiments and can be implemented with various modifications depending on the purpose or use.

[0011] The display device of the present invention is a display device having at least metal wiring, a cured film, an inorganic insulating film, and a plurality of light-emitting elements, wherein the cured film is a film formed by curing a resin composition comprising (A) a resin, and the light-emitting element is an inorganic light-emitting diode having a pair of electrode terminals on one side, wherein the pair of electrode terminals are connected to a plurality of metal wirings extending into the cured film and the inorganic insulating film, and the plurality of metal wirings maintain electrical insulation between them by the cured film and the inorganic insulating film, wherein the cured film has a plurality of layers, and the inorganic insulating film is arranged to be in contact with at least a portion between the layers of the plurality of cured films.

[0012] FIG. 1 is described as an example of one form of the display device of the present invention.

[0013] In FIG. 1, the display device (1) places a plurality of light-emitting elements (2) on a counter substrate (5) and places a cured film (3) on the light-emitting elements (2). The surface of the light-emitting elements may be not only the surface of the light-emitting elements but also a supporting substrate or the upper side of the light-emitting elements. In the form shown in FIG. 1, a configuration is illustrated in which a plurality of cured films (3) are additionally stacked on a cured film (3) placed to be in contact with at least a part of the light-emitting elements (2) to form a total of three layers, but the cured film (3) may be two layers. The light-emitting elements (2) are provided with a pair of electrode terminals (6) on a surface opposite to the surface in contact with the counter substrate (5), and each electrode terminal (6) is connected to a plurality of metal wires (4) that extend into the cured film (3) and the inorganic insulating film (19).

[0014] In addition, a plurality of metal wires (4) extending into the hardened film (3) and the inorganic insulating film (19) are covered by the hardened film (3), the inorganic insulating film (19), or both; since the hardened film (3) and the inorganic insulating film (19) also function as insulating films, the configuration is such that electrical insulation is maintained. The configuration in which the metal wires maintain electrical insulation means that (A) the parts requiring electrical insulation of the metal wires are covered by a hardened film formed by curing a resin composition containing a resin and the inorganic insulating film, and the hardened film and the inorganic insulating film have a volume retention resistivity of 10 12 It means maintaining electrical insulation of Ω·cm or more.

[0015] In addition, the light-emitting element (2) can be electrically connected to a driving element (8) attached to a light-emitting element driving substrate (7) installed at a position opposite to the opposing substrate (5) via metal wiring (4 or 4c) to control the light emission of the light-emitting element (2). In addition, the light-emitting element driving substrate (7) is electrically connected to the metal wiring (4) via, for example, a solder bump (10). Also, a barrier metal (9) may be placed to prevent the diffusion of metal such as the metal wiring (4). In addition, in the following drawings, the metal wiring (4c) may penetrate the light-emitting element driving substrate (7) and be connected to the driving element (8).

[0016] The above-mentioned cured film is a film formed by curing a resin composition containing the (A) resin described below, and it is important that the above-mentioned inorganic insulating film is positioned to be in contact with at least a portion of the cured film. By doing so, the warping of the display device can be reduced, stress concentration can be alleviated, and delamination or cracking can be suppressed. Therefore, in the manufacturing process of the display device or in the reliability test process, which is an accelerated test for actual use, misalignment or delamination of the light-emitting element, delamination of the metal wiring, and cracking can be suppressed, and a display device with a low defect rate after the reliability test can be obtained. Examples of reliability tests include impact tests, high temperature holding tests, constant temperature and high humidity tests, and thermal cycle tests.

[0017] The inorganic insulating film is formed, for example, by the CVD method. The thickness of the inorganic insulating film is preferably 0.2 μm or more, more preferably 0.4 μm or more, and particularly preferably 0.8 μm or more. In addition, the thickness of the inorganic insulating film is preferably 1.0 μm or less. The material for the inorganic insulating film is not particularly limited, and known materials may be used. For example, silicon oxide (SiO₂) x ), silicon nitride (SiN x ), aluminum oxide (Al x O y ) or aluminum nitrate (Al x O y Nz Inorganic materials having one or more of the following as main components are used. In addition, when these inorganic insulating films reflect light, they also function as reflective films, and as light passing through the hardened film (3) is reflected by the inorganic insulating film, the light extraction efficiency is increased, and the brightness can be improved.

[0018] By doing so, the bending of the display device can be reduced and stress concentration can be relieved, thereby suppressing peeling or cracking, and the light extraction efficiency can be increased to improve brightness.

[0019] The display device of the present invention preferably has a sandwich structure in which the hardened film is arranged to be in contact with both sides of the inorganic insulating film. A sandwich structure refers to a structure in which the hardened film (3) is laminated to be in contact with the upper and lower surfaces of the inorganic insulating film (19), as shown in FIG. 1. As another embodiment of the display device, the sandwich structure may be formed in the entire interlayer of the hardened film (3), excluding the portion of the metal wiring (4), as shown in FIG. 1, or the sandwich structure may be formed in a part of the interlayer of the hardened film (3), as shown in FIG. 12.

[0020] In addition, the display device of the present invention preferably has a sandwich structure in which, in the vertical direction in which a plurality of cured films are stacked relative to the plane in which the plurality of light-emitting elements are arranged, the inorganic insulating film is placed between a cured film positioned at the first furthest position relative to the light-emitting elements and a cured film positioned at the second furthest position relative to the light-emitting elements. Specifically, as described in FIG. 1, a plurality of light-emitting elements (2) are arranged on a plane, and a plurality of cured films (3) are stacked on one side of the plane to form a total of three layers. Among the three layers of cured films, it is preferable to have a sandwich structure in which the inorganic insulating film is placed between a cured film positioned at the first furthest position relative to the plurality of cured films (3) and a cured film positioned at the second furthest position relative to the plane.

[0021] In addition, among the sandwich structures, when the thickness of the hardened film placed at the first furthest position is α (㎛), the thickness of the inorganic insulating film between the hardened film placed at the first furthest position and the hardened film placed at the second furthest position is β (㎛), and the thickness of the hardened film placed at the second furthest position is γ (㎛), it is preferable that α > γ, 6 ≤ α / β ≤ 100, and 0.01 ≤ β / γ ≤ 0.75. Specifically, as illustrated in FIG. 1, when the thickness (23) of the hardened film placed at the first furthest position is α (㎛), the thickness (22) of the inorganic insulating film between the hardened film placed at the first furthest position and the hardened film placed at the second furthest position is β (㎛), and the thickness of the hardened film (24) placed at the second furthest position is γ (㎛), it is preferable that the relationship satisfies α > γ, 6 ≤ α / β ≤ 100, and 0.01 ≤ β / γ ≤ 0.75, and it is more preferable that the relationship satisfies α > γ, 7 ≤ α / β ≤ 40, and 0.04 ≤ β / γ ≤ 0.30.

[0022] Here, the thickness of α to γ ​​(μm) refers to the maximum film thickness in each layer of the hardened film.

[0023] By doing so, in reliability testing, the bending of the display device can be reduced and stress concentration can be alleviated, thereby suppressing peeling or cracking, and insulation degradation can be prevented from continuous high voltage application during operation.

[0024] In addition, in the present invention, it is preferable that the total thickness of the insulating layer including the hardened film and the inorganic insulating film is 5㎛ to 100㎛. Also, the metal wiring (4) may include an electrode.

[0025] The material of the metal wiring (4) is not particularly limited and any known material may be used. Examples include gold, silver, copper, aluminum, nickel, titanium, molybdenum, or alloys containing these, and copper is preferred. Additionally, the metal wiring (4) may include electrodes.

[0026] In the display device of the present invention, the metal wiring may be a conductive film.

[0027] The conductive film is not particularly limited and, for example, may be a compound containing an oxide of at least one element among indium, gallium, zinc, tin, titanium, and niobium as a main component, or a photosensitive conductive paste containing organic material and conductive particles, but other known materials may also be used. Specifically, compounds containing an oxide of at least one element among indium, gallium, zinc, tin, titanium, and niobium as a main component may include indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO:InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), and indium oxide (InO).

[0028] These conductive films can be formed by, for example, wet plating methods such as electroless plating and electrolytic plating, CVD chemical vapor deposition methods such as thermal CVD, plasma CVD, and laser CVD, dry plating methods such as vacuum deposition, sputtering, and ion plating, or by methods such as bonding a metal foil to a substrate and then performing etching.

[0029] Regarding a photosensitive conductive paste containing organic materials and conductive particles, examples of organic materials include epoxy resins, phenoxy resins, acrylic copolymers, epoxycarboxylate compounds, etc. Two or more of these may be included. Additionally, organic materials having urethane bonds may be included. By including organic materials having urethane bonds, the flexibility of the wiring can be improved. Furthermore, it is preferable that the organic materials exhibit photosensitivity, allowing fine wiring patterns to be easily formed by photolithography. Photosensitivity is expressed, for example, by including a photopolymerization initiator or a component having an unsaturated double bond.

[0030] In the present invention, a conductive particle refers to one having an electrical resistivity of 10 -5 It refers to particles composed of materials with a Ω·m or less. Examples of materials constituting the conductive particles include silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, indium, alloys of these metals, and carbon particles. Additionally, the conductive film includes electrodes. An example of a display device using a conductive film is shown in FIGS. 28 and 29.

[0031] As another embodiment of the present invention, as shown in FIG. 11, a configuration is illustrated in which a cured film (20) is formed so as to be in contact with at least a part of a light-emitting element (2) with respect to the display device of FIG. 1. The cured film (20) placed so as to be in contact with at least a part of a light-emitting element (2) may be composed of a cured film formed by curing a resin composition or a resin sheet containing (A) resin, or it may be composed of a material other than a cured film formed by curing a resin composition or a resin sheet containing (A) resin, and known materials such as epoxy resin, silicone resin, fluoropolymer resin may be used.

[0032] In the present invention, the light-emitting element driving substrate (7) may be a substrate having an element having a driving function, and it is preferable that a driving element (8) is connected thereto. The light-emitting element driving substrate (7) is not particularly limited and may use known materials. Examples include a glass substrate, a sapphire substrate, a printed circuit board, a TFT array substrate, ceramics, etc.

[0033] In the present invention, it is preferable that the total thickness of the insulating layer including the hardened film and the inorganic insulating film is 5㎛ to 100㎛.

[0034] By having an insulating layer including a hardened film and an inorganic insulating film with a total thickness of 5㎛ to 100㎛, light emitted in all directions from the light-emitting element (2) is suppressed from being absorbed within the hardened film (3), thereby increasing light extraction efficiency and improving brightness. In addition, it is possible to reduce the size of the display device itself having the light-emitting element, suppress wiring defects such as short circuits in wiring due to short wiring distances, suppress wiring loss, and improve high-speed response.

[0035] The total thickness of the insulating layer including the cured film and the inorganic insulating film refers to the total thickness of a continuous layer of cured films in which at least a portion of one cured film contacts another cured film and the inorganic insulating film. For example, when multiple cured films (3) and inorganic insulating films (19) are stacked as shown in FIG. 1 above, the region indicated by 18 in FIG. 1 is the total thickness of the insulating layer including the cured film and the inorganic insulating film. The total thickness is preferably 7 to 70 μm, more preferably 8 to 60 μm. If it is less than 5 μm, the protection of the metal wiring is insufficient, so there is a concern about wiring defects such as short circuits in the wiring, and if it exceeds 100 μm, there is a concern that the light extraction efficiency is insufficient, and there may be unsuitability in terms of suppressing wiring defects such as short circuits in the wiring due to the reduction of the display device itself and the reduction of wiring distances, suppressing loss, and improving high-speed response.

[0036] In addition, when multiple hardened films are stacked, it is preferable that the number of hardened film layers be between 2 and 10. Here, even if an inorganic insulating film is placed between the layers of the hardened film, the inorganic insulating film is not included in the number of hardened film layers.

[0037] From the perspective of arranging multiple light-emitting elements, it is preferable to have two or more layers of cured film, and also to have three or more layers so that the number of metal wires that can be connected to the light-emitting elements can be increased, thereby allowing multiple light-emitting elements to be arranged. Additionally, from the perspective of suppressing wiring defects such as short circuits in wiring due to package reduction or wiring short distances, reducing losses, and improving high-speed response, it is preferable to have 10 or fewer layers.

[0038] In the present invention, an opening pattern penetrating in the thickness direction is formed in the cured film, and a metal wiring is arranged in at least the opening pattern, and it is preferable that the longest length of the bottom surface of the metal wiring formed at a position in contact with the light-emitting element is 2 to 20 μm.

[0039] FIG. 2 shows a front enlarged cross-sectional view (upper part) of designated area A of FIG. 1 and a bottom view (lower part) of designated area A excluding the light-emitting element. In the enlarged front cross-sectional view (upper part) of designated area A of FIG. 2, a cured film (3) is formed on the light-emitting element (2). An opening pattern (12) is formed in the cured film (3), and a metal wiring (4) is formed in the opening pattern (12). The metal wiring (4) extends into the cured film (3) and is in contact with the electrode terminal (6) of the light-emitting element (2), and the bottom portion (13) of the metal wiring (4) shows the shape of the metal wiring (4) at the point in contact with the electrode terminal (6) of the light-emitting element (2).

[0040] In the bottom view (lower part) excluding the light-emitting element in designated area A of FIG. 2, the bottom part (13) of the metal wiring (4) extended to the cured film (3) with the light-emitting element (2) removed is shown as a bottom view from below. The shape of the bottom part (13) may vary depending on the shape of the product or the light-emitting element. In the case of a circular shape, the diameter is defined as the longest length (14); in the case of an elliptical shape, the major axis is defined as the longest length (14); and in the case of a polygon such as a rectangle, the longest diagonal line formed by connecting the vertices of the corners is defined as the longest length (14). Additionally, the bottom part (13) in the bottom view (lower part) excluding the light-emitting element in designated area A of FIG. 2 shows an example of a circular shape.

[0041] With this configuration, a fine light-emitting element can be applied, and high-density mounting of multiple light-emitting elements is possible, allowing for a display device having a high-resolution light-emitting element in a wide range of sizes. Additionally, it is possible to form fine metal wiring, and since the number of wirings that can be formed within a unit area increases, the overall thickness of the cured film can be reduced. Furthermore, light emitted in all directions from the light-emitting element (2) is suppressed from being absorbed within the cured film (3), thereby increasing light extraction efficiency and improving brightness. Moreover, it is possible to reduce the size of the display device itself having the light-emitting element, suppress wiring defects such as short circuits due to short wiring distances, reduce loss, and improve high-speed response.

[0042] In the present invention, the maximum length of the bottom portion of the metal wiring formed at a position close to the light-emitting element may be 2 to 20 μm.

[0043] With this configuration, a fine light-emitting element can be applied, and high-density mounting of multiple light-emitting elements is possible, allowing for a display device having a high-resolution light-emitting element in a wide range of sizes. Additionally, it becomes possible to form fine metal wiring, and since the number of wirings that can be formed within a unit area increases, the overall thickness of the cured film can be reduced. Furthermore, light emitted in all directions from the light-emitting element (2) is suppressed from being absorbed within the cured film (3), thereby increasing light extraction efficiency and improving brightness. Moreover, it is possible to reduce the size of the display device itself having the light-emitting element, suppress wiring defects such as short circuits due to short wiring distances, reduce loss, and improve high-speed response.

[0044] In terms of applying a micro-light-emitting element and high-density mounting of the light-emitting element, the maximum length of the bottom portion of the metal wiring is preferably 2 to 15 μm, more preferably 2 to 10 μm, and even more preferably 2 to 5 μm. If it is less than 2 μm, there may be a failure in connection with the light-emitting element (2), and if it exceeds 20 μm, it may cause harm to the application of the micro-light-emitting element or high-density mounting.

[0045] In addition, the thickness of the hardened film is preferably 1.1 times or more and 4.0 times or less with respect to the thickness of the metal wiring.

[0046] The thickness of the metal wiring refers to the thickness of the metal wiring (4a) disposed on the surface of the cured film (3) as described in the front enlarged cross-sectional view (upper part) of designated area A in FIG. 2, and does not include the thickness of the metal wiring (4b) that extends in an opening pattern penetrating in the thickness direction within the cured film (3). The thickness of the metal wiring is preferably 0.1 to 10 μm, and more preferably 3 to 10 μm. By making the thickness of the metal wiring 0.1 to 10 μm, it is possible to reduce the size of the display device itself having the light-emitting element, suppress wiring defects such as short circuits in wiring due to short wiring distances, suppress wiring loss, and improve high-speed response. In addition, by making it 3 to 10 μm, wiring resistance can be reduced, and it can contribute to suppressing power consumption and improving brightness.

[0047] The thickness of the hardened film refers to the thickness of the hardened film (3a) covering the metal wiring (4a), as explained in the front enlarged cross-sectional view (upper part) of designated area A in FIG. 2.

[0048] As a result, a highly reliable hardened film can be obtained that also acts as a protective film for suitable metal wiring and suppresses wiring defects such as short circuits.

[0049] In addition, in the present invention, it is preferable that the cured film covers a surface other than the light extraction surface of the light-emitting element.

[0050] As an example, FIG. 3 shows an enlarged cross-sectional view of the upper surface of designated area B of FIG. 1 (upper part), a cross-sectional view excluding wiring in a plane orthogonal to the front of designated area B (middle part), and a bottom view excluding the opposing substrate of designated area B (lower part).

[0051] In the enlarged cross-sectional view (upper part) of the upper surface of designated area B of FIG. 3, the light-emitting element (2) is covered with a hardened film (3), and a metal wiring (4) extending into the hardened film (3) is connected to the electrode terminal (6) of the light-emitting element and is shown from the upper surface.

[0052] In the cross-sectional view (middle part) excluding wiring in a plane orthogonal to the front of FIG. 3, it is shown that the area around the light-emitting element (2) is covered with a hardened film (3). In the bottom view (lower part) excluding the opposing substrate of designated area B of FIG. 3, it is shown that although the area around the light-emitting element (2) is covered with a hardened film (3), one side of the light-emitting element (2) is not covered with a hardened film (3).

[0053] As shown in FIGS. 1 and 3, by covering the entire side and top surface of the light-emitting element (2) with a hardened film (3), the light-emitting element (2) can be protected from external impact. In addition, it is desirable because the step difference caused by the arrangement of the light-emitting element (2) can be flattened, and bonding with the opposing substrate (5) becomes easier.

[0054] In addition, in the present invention, it is preferable to form a reflective film on the cured film. As shown in FIG. 4, a reflective film (15) is formed on a cured film (3) placed around a light-emitting element (2). By forming a reflective film (15) on the cured film (3), light passing through the cured film (3) is reflected by the reflective film (15), thereby further increasing the extraction efficiency and improving brightness. Furthermore, in reliability testing, it is preferable to obtain a display device with a low defect rate because the deterioration of metal wiring or the cured film due to absorption or light can be suppressed.

[0055] The reflective film can be formed at any location on the hardened film, and may be arranged in a form that surrounds all four sides with respect to the direction of extraction of the light-emitting element, arranged obliquely with respect to the light-emitting element, or arranged with a curve.

[0056] As a reflective film, any film that reflects light can be used, such as aluminum, silver, copper, titanium, or alloys containing them, but is not limited to these.

[0057] In the present invention, it is preferable to have a partition wall having a thickness greater than or equal to the thickness of the light-emitting element between a plurality of the light-emitting elements.

[0058] As shown in FIG. 5, it is preferable to have a repeating pattern according to the number of pixels of a display device (1) having a light-emitting element (2), that is, a partition (16) between or around each light-emitting element (2). This configuration is preferable because it facilitates bonding with an opposing substrate (5).

[0059] It is preferable that the thickness of the partition be greater than the thickness of each light-emitting element, and specifically, 5㎛ to 120㎛ is preferable.

[0060] The barrier may be composed of a cured film formed by curing a resin composition containing (A) resin, or it may be composed of a material other than a resin composition containing (A) resin, and known materials such as epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. By using these materials, a barrier with excellent adhesion can be formed.

[0061] To improve contrast by suppressing light leakage from light-emitting elements or color mixing between pixels, a light-blocking section may be formed on the side of the partition or on the partition itself. The light-blocking section is, for example, a part containing black pigment.

[0062] In addition, light emitted from the light-emitting element in the direction of the partition wall can be reflected to increase light extraction efficiency, and a reflective film may be formed on the side of the partition wall to improve brightness. The reflective film is a part that contains, for example, a white pigment.

[0063] It is preferable to place a partition wall having a thickness greater than or equal to the thickness of the light-emitting element between a plurality of the above-mentioned light-emitting elements in the cured film covering the light-emitting element.

[0064] As another embodiment for forming a partition, as shown in FIG. 6, a configuration is illustrated in which a partition (16) is formed between or around the light-emitting elements (2) within a cured film (3) covering the light-emitting elements (2).

[0065] The partition wall shown in FIG. 6 may be composed of a material other than a resin composition containing (A) resin, and known materials such as epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. By using these materials, a partition wall with excellent adhesion can be formed.

[0066] It is desirable to arrange partitions so that they can serve as markers when transferring light-emitting elements later, and also be used as photospacers, thereby increasing the efficiency during the transfer of light-emitting elements.

[0067] In the present invention, it is also preferable to arrange a partition wall having a thickness greater than or equal to the thickness of a light-emitting element between a plurality of light-emitting elements, and to form a reflective film around the partition wall.

[0068] Specifically, as shown in FIGS. 7 and 8, a partition wall (16) having a thickness greater than or equal to the thickness of a light-emitting element (2) is placed between a plurality of light-emitting elements (2), and a reflective film (15) is installed around the partition wall.

[0069] By configuring the structure to form a reflective film around the partition wall, light emitted from the light-emitting element is reflected by the reflective film around the partition wall, thereby increasing light extraction efficiency and improving brightness.

[0070] In the present invention, a light diffusion layer may be formed around a light-emitting element, a cured film, or metal wiring.

[0071] In the present invention, it is preferable that the light-emitting element is an inorganic light-emitting diode with a side length of 5 μm or more and 700 μm or less, and it is even more preferable that the light-emitting element is an inorganic light-emitting diode with a side length of 5 μm or more and 100 μm or less.

[0072] Inorganic light-emitting diodes are constructed by a PN junction formed by joining a P-type semiconductor and an N-type semiconductor. When a forward voltage is applied to an inorganic light-emitting diode, electrons and holes move within the chip, and current flows. At that time, an energy difference is created as electrons and holes combine, and the excess energy is converted into light energy to emit light. The wavelength of light emitted from an inorganic light-emitting diode varies depending on the compounds constituting the semiconductor, such as GaN, GaAs, InGaAlP, and GaP, and this difference in wavelength determines the color of the emitted light. Furthermore, while white is generally displayed by mixing two or more types of different colored light, in the case of inorganic light-emitting diodes, color reproducibility is greatly improved by mixing the three primary colors of red, green, and blue, making it possible to display a more natural white.

[0073] Inorganic light-emitting diodes can be shaped like a projectile, a chip, or a polygon, but from the perspective of miniaturization of inorganic light-emitting diodes, a chip or polygonal shape is preferred. In addition, it is preferable that the length of one side of the inorganic light-emitting diode be 5㎛ or longer and 700㎛ or shorter so that multiple chips can be arranged, and it is even more preferable that the length of one side of the inorganic light-emitting diode be 5㎛ or longer and 100㎛ or shorter.

[0074] In addition, in the present invention, it is preferable to provide electrodes on discontinuous surfaces. Discontinuous surfaces are not continuous surfaces, but surfaces with steps, and for example, a structure like that shown in FIG. 27 can be provided. By providing electrode terminals (6) on discontinuous surfaces, the light-emitting area of ​​the light-emitting element can be controlled, and the productivity or light-emitting efficiency of the light-emitting element can be improved.

[0075] Regarding the mounting method for the light-emitting element driving substrate (7) of the inorganic light-emitting diode, for example, the pick-and-place method or the mass transfer method has been proposed, but it is not limited to these.

[0076] Regarding mounting an inorganic light-emitting diode on a substrate such as a light-emitting device driving substrate (7), examples include a method of mounting an inorganic light-emitting diode that emits red, green, and blue light by arranging it in a matrix shape at a predetermined position on the light-emitting device driving substrate (7), or a method of mounting a single type of inorganic light-emitting diode, such as an inorganic light-emitting diode that emits red or blue light or an ultraviolet inorganic light-emitting diode that emits ultraviolet light, by arranging it on a substrate such as a light-emitting device driving substrate. The latter method can facilitate the arrangement mounting of inorganic light-emitting diodes. In this case, red, green, and blue subpixels can be created using a wavelength conversion material such as a quantum dot to enable full-color display.

[0077] Known materials can be used as wavelength conversion materials.

[0078] For example, when using blue-emitting inorganic light-emitting diodes, it is preferable to first fabricate an inorganic light-emitting diode array substrate in which only blue-emitting inorganic light-emitting diodes are arranged and mounted, and then arrange a wavelength conversion layer at positions corresponding to red and green subpixels that is excited by blue light and emits red or green light through wavelength conversion. By doing so, it becomes possible to form red, green, and blue subpixels using only blue-emitting inorganic light-emitting diodes.

[0079] Meanwhile, when using an inorganic light-emitting diode that emits ultraviolet light, it is preferable to first fabricate an inorganic light-emitting diode array substrate in which only the inorganic light-emitting diodes are arranged and mounted, and to arrange a wavelength conversion layer that is excited by ultraviolet light and emits light by converting its wavelength to red, green, or blue at positions corresponding to red, green, and blue subpixels. By doing so, the difference in the radiation angle of light caused by the color of the aforementioned subpixels can be suppressed.

[0080] A known type can be used as the wavelength conversion layer, and a color filter, etc., may also be used as needed.

[0081] Examples of the opposing substrates in the present invention include glass plates, resin plates, resin films, etc. Alkali-free glass is preferred as the material of the glass plate. Polyester, (meth)acrylic polymer, transparent polyimide, polyethersulfone, etc. are preferred as the materials of the resin plate and resin film. The thickness of the glass plate and resin plate is preferably 1 mm or less, and preferably 0.8 mm or less. The thickness of the resin film is preferably 100 μm or less.

[0082] In the present invention, the display device is equipped with a driving element, and it is preferable that a light-emitting element is electrically connected to the driving element through a metal wiring extending into the cured film. By having the display device equipped with a driving element and the light-emitting element being electrically connected to the driving element through a metal wiring extending into the cured film, a plurality of light-emitting elements can be individually switched and driven. Examples of driving elements include driver ICs, and multiple driver ICs may be used for each function, either for a single inorganic light-emitting diode or for a unit of inorganic light-emitting diodes consisting of red, blue, and green.

[0083] In addition, as shown in FIG. 9, as a configuration for the arrangement of the driving element, it is preferable to arrange the driving element (8) in the cured film (3) near the light-emitting element (2) on the opposing substrate (5). In addition, as shown in FIG. 10, it is also preferable to arrange the driving element (8) in the cured film at a position above the light-emitting element (2).

[0084] As a result, it becomes possible to suppress wiring defects such as short circuits caused by shortening wiring distances, suppress loss, and improve high-speed responsiveness.

[0085] In the present invention, it is also preferable to have a driving element and a substrate, wherein the driving element is connected to a light-emitting element through a metal wiring, and at least a portion of the metal wiring extends to the side of the substrate. By having a driving element and a substrate, wherein the driving element is connected to a light-emitting element through a metal wiring, and at least a portion of the metal wiring extends to the side of the substrate, a plurality of light-emitting elements can be individually switched and driven, and the display device itself can be made smaller and more compact.

[0086] As for the substrate, it is not particularly limited, just like the light-emitting element driving substrate (7), and known materials may be used. Examples include a glass substrate, a sapphire substrate, a printed circuit board, a TFT array substrate, ceramics, etc. At least some of the metal wiring extending to the side of the substrate may be composed of, for example, gold, silver, copper, aluminum, nickel, titanium, tungsten, aluminum, tin, chromium, or an alloy containing these. In addition, the metal wiring extending to the side of the substrate may be formed by, for example, wet plating such as electroless plating or electrolytic plating, CVD chemical vapor deposition methods such as thermal CVD, plasma CVD, or laser CVD, dry plating methods such as vacuum deposition, sputtering, or ion plating, or by a method of bonding a metal foil to the substrate and then performing etching. In addition, grooves may be arranged on the side of the substrate. In this case, since adjacent metal wirings are reliably separated by the grooves, short circuits between metal wirings can be suppressed. A groove for arranging side conductor lines can be formed by cutting, etching, laser processing, etc.

[0087] As for the configuration of the metal wiring, a configuration arranged as shown in, for example, FIG. 1 or 4c of FIG. 5 is preferred.

[0088] In the present invention, the metal wiring may be a conductive film.

[0089] Examples of conductive films include compounds containing oxides of at least one element among indium, gallium, zinc, tin, titanium, and niobium as a main component, or photosensitive conductive pastes containing organic materials and conductive particles, but other known materials may also be used.

[0090] Compounds containing oxides of at least one element among indium, gallium, zinc, tin, titanium, and niobium as a main component include, specifically, indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO:InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), and indium oxide (InO).

[0091] These conductive films can be formed by, for example, wet plating methods such as electroless plating and electrolytic plating, CVD chemical vapor deposition methods such as thermal CVD, plasma CVD, and laser CVD, dry plating methods such as vacuum deposition, sputtering, and ion plating, or by methods such as bonding a metal foil to a substrate and then performing etching.

[0092] In a photosensitive conductive paste containing organic material and conductive particles, it is preferable that the content of conductive particles be 60 to 90 mass%. Since the conductive layer contains organic material, it is possible to suppress breakage on curved surfaces or bends and improve conductivity. If the content of conductive particles is less than 60 mass%, the probability of contact between conductive particles decreases, and conductivity decreases. Additionally, conductive particles tend to separate from each other in the bends of the wiring. The content of conductive particles is preferably 70 mass% or more. On the other hand, if the content of conductive particles exceeds 90 mass%, it becomes difficult to form a wiring pattern, and breakage tends to occur in the bends. The content of conductive particles is preferably 80 mass% or less.

[0093] Examples of organic materials include epoxy resins, phenoxy resins, acrylic copolymers, and epoxycarboxylate compounds. Two or more of these may be included. Additionally, it is acceptable to include organic materials having urethane bonds. By including organic materials having urethane bonds, the flexibility of the wiring can be improved. Furthermore, it is desirable for the organic materials to exhibit photosensitivity, which allows for the easy formation of fine wiring patterns by photolithography. Photosensitivity is manifested, for example, by including a photopolymerization initiator or a component having an unsaturated double bond.

[0094] In the present invention, a conductive particle refers to one having an electrical resistivity of 10 -5 It refers to particles composed of materials with a value of Ω·m or less. Examples of materials constituting the conductive particles include silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, indium, alloys of these metals, and carbon particles. In addition, it is preferable to contain two or more types of conductive particles. By containing two or more types of conductive particles, volume shrinkage caused by sintering of similar conductive particles is suppressed during the heat treatment process described later, and consequently, volume shrinkage of the entire conductive film is suppressed, thereby improving flexibility.

[0095] It is preferable that the average particle diameter of the conductive particles be 0.005 to 2 μm. Here, the average particle diameter refers to the average particle diameter of the large-diameter particles when two or more types of conductive particles are contained. If the average particle diameter of the conductive particles is 0.005 μm or more, interactions between the conductive particles can be appropriately suppressed, thereby maintaining the dispersion state of the conductive particles more stably. More preferably, the average particle diameter of the conductive particles is 0.01 μm or more. On the other hand, if the average particle diameter of the conductive particles is 2 μm or less, it becomes easier to form a desired wiring pattern. More preferably, the average particle diameter of the conductive particles is 1.5 μm or less.

[0096] The thickness of the conductive film is preferably 2 to 10 μm. If the thickness of the conductive film is 2 μm or more, wire breakage in the curved portion can be further suppressed, and conductivity can be further improved. The thickness of the conductive film is more preferably 4 μm or more. On the other hand, if the thickness of the conductive film is 10 μm or less, the wiring pattern can be formed more easily during the manufacturing process. The thickness of the conductive film is more preferably 8 μm or less.

[0097] As for the configuration of the conductive film, a configuration arranged as shown in Figure 28 of Figures 23 to 26 is preferred.

[0098] In the present invention, it is also preferable to have a light-shielding portion between a plurality of light-emitting elements. By having a light-shielding portion between a plurality of light-emitting elements, light leakage from the light-emitting elements and color mixing between pixels can be suppressed without significantly impairing reliability or light extraction efficiency, thereby improving contrast.

[0099] The light-blocking portion may be composed of a cured film formed by curing a resin composition comprising (A) a resin and (E) a coloring agent, or it may be composed of a material other than a resin composition comprising (A) a resin, and known materials such as epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. As (E) a coloring agent, a black pigment may be used, and examples include black organic pigments such as carbon black, perylene black, and aniline black, graphite, and metal fine particles such as titanium, copper, iron, manganese, cobalt, chromium, nickel, zinc, calcium, and silver, as well as inorganic pigments such as metal oxides, complex oxides, metal sulfides, metal nitrides, and metal oxynitrides. In addition, a red pigment and a blue pigment, or a yellow pigment and other pigments as needed, may be combined to produce black. A dye may also be used. Two or more types of coloring agents may be included.

[0100] Photosensitivity may be imparted to a resin composition comprising (A) a resin and (E) a coloring agent, or (B) a photosensitive agent described later may be used.

[0101] As a method for preparing a resin composition comprising (A) a resin and (E) a colorant, for example, a resin solution containing (A) a resin, (E) a colorant, and optionally a dispersant and an organic solvent is dispersed using a disperser to prepare a colorant dispersion with a high concentration of the colorant, and additionally, other components such as (A) a resin or, optionally, a photosensitive agent are added and stirred. Filtration may be performed if necessary.

[0102] Examples of dispersers include ball mills, bead mills, sand grinders, three-roll mills, high-speed impact mills, etc. Among these, a bead mill is preferred for improving dispersion efficiency and fine dispersion. Examples of bead mills include Coball mills, basket mills, pin mills, and Dyno mills. Examples of beads used in the bead mill include titania beads, zirconia beads, and zircon beads. The bead diameter of the bead mill is preferably 0.03 to 1.0 mm. (E) When the primary particle diameter of the coloring agent and the particle diameter of the secondary particles formed by the aggregation of the primary particles are small, it is preferable to use fine beads with a diameter of 0.03 to 0.10 mm. In this case, a bead mill equipped with a centrifugal separator capable of separating the fine beads from the dispersion liquid is preferred. On the other hand, when dispersing a coloring agent containing coarse particles of submicron size, it is preferable to use beads with a diameter of 0.10 mm or more to obtain sufficient grinding power.

[0103] A resin composition comprising (A) a resin and (E) a coloring agent can be applied to various substrates, dried, and then heat-treated to obtain a light-shielding portion. In the case of photosensitive material, a patterned light-shielding portion can be obtained by irradiating with a chemical line described later, followed by exposure, development, and heat treatment described later.

[0104] The thickness of the light-shielding portion is preferably 0.1 to 5 μm. If the thickness of the light-shielding portion is 0.1 μm or more, light leakage from the light-emitting element and color mixing between pixels can be suppressed, thereby improving contrast. The thickness of the light-shielding portion is more preferably 0.5 μm or more. Meanwhile, if the thickness of the wiring is 5 μm or less, light leakage from the light-emitting element and color mixing between pixels can be suppressed without significantly impairing light extraction efficiency, thereby improving contrast. The thickness of the light-shielding portion is more preferably 4 μm or less.

[0105] The light-blocking part is formed by creating a colored film with a thickness of 1.0 μm on alkali-free glass with a thickness of 0.7 mm, and it is preferable that the reflective chromaticity values ​​(a*, b*) measured from the glass surface are -0.5 ≤ a* ≤ 1.0 and -1.0 ≤ b* ≤ 0.5, and it is also preferable that -0.5 ≤ a* ≤ 0.5 and -1.0 ≤ b* ≤ 0.4. The reflective chromaticity serves as an indicator of the hue of the image reflected on the colored film, and the closer (a*, b*) is to (0.0, 0.0), the more it is considered to be an achromatic reflective hue. Meanwhile, since the reflective hue of a black display in a liquid crystal display or an organic EL display generally has a negative b* value and is a blue hue, it is preferable that the reflective film used in the display device has a negative b* value.

[0106] The reflective chromaticity (L*, a*, b*) of the colored film is obtained by measuring the total reflection chromaticity (SCI) for light incident from a transparent substrate under measurement conditions of a standard light source D65 (color temperature 6504K), a viewing angle of 2° (CIE1976), atmospheric pressure, and 20°C, using a spectrophotometer (CM-2600d; manufactured by Konica Minolta Corp.) calibrated with a white calibration plate (CM-A145; manufactured by Konica Minolta Corp.). As for the configuration of the light-blocking part, a configuration arranged as shown in 29 of FIG. 22 is preferred, for example. The light-blocking part (29) may be in contact with the light-emitting element (2) or separated from it.

[0107] In the present invention, regarding the cured film obtained by curing a resin composition comprising (A) resin, it is desirable that the resin (A) has high heat resistance, specifically that the resin deterioration is minimal under high temperatures of 160°C or higher during or after heat treatment, and that the formation of structures such as quinone structures, which are one of the coloring structures, is minimal, which is associated with resin deterioration or resin decomposition. Furthermore, such a cured film is desirable as a cured film used as a display device, such as an insulating film, a protective film, or a barrier, because the amount of outgassing, which is one of the excellent characteristics, is reduced.

[0108] In addition, (A) it is desirable for the resin to have a high light transmittance at the exposure wavelength before curing, in order to form a desired aperture pattern by exposure and development. To obtain such characteristics, it is desirable, for example, to shorten the conjugated chains derived from the aromatic ring of the resin or to reduce the transfer of charge within or between molecules.

[0109] In addition, for the protection of metal wiring, it is desirable that the film has excellent processability even if it is 10㎛ or thicker.

[0110] (A) The resin is not particularly limited, but it is preferable that it be an alkali-soluble resin from the perspective of reducing environmental burden. Alkali solubility is defined as follows: a solution in which the resin is dissolved in γ-butyrolactone is applied onto a silicon wafer, and a pre-bake is performed at 120°C for 4 minutes to form a pre-bake film with a thickness of 10 μm ± 0.5 μm. Then, the pre-bake film is immersed for 1 minute in an alkaline aqueous solution selected from 2.38 mass% tetramethylammonium hydroxide aqueous solution, 1 mass% potassium hydroxide aqueous solution, and 1 mass% sodium hydroxide aqueous solution at 23 ± 1°C, and the reduction in film thickness is determined by rinsing with pure water. Alkali solubility is defined as having a dissolution rate of 50 nm / min or more of the pre-bake film.

[0111] The above resin (A) preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and copolymers thereof. The above resin (A) may contain these resins alone or may contain a combination of multiple resins.

[0112] Polyimide, polyimide precursor, polybenzoxazole, and polybenzoxazole precursor are explained.

[0113] Polyimide is not particularly limited as long as it has an imide ring. Additionally, polyimide precursors are not particularly limited as long as they have a structure that becomes a polyimide having an imide ring upon dehydration and ring closure, and may contain polyamic acid or polyamic acid esters, etc. Polybenzoxazole is not particularly limited as long as it has an oxazole ring. Polybenzoxazole precursors are not particularly limited as long as they have a structure that becomes a polybenzoxazole having a benzoxazole ring upon dehydration and ring closure, and may contain polyhydroxyamide, etc.

[0114] Polyimide has a structural unit represented by general formula (1), polyimide precursor and polybenzoxazole precursor have a structural unit represented by the following general formula (2), and polybenzoxazole has a structural unit represented by general formula (3). Two or more of these may be contained, and a resin copolymerized with a structural unit represented by general formula (1), a structural unit represented by general formula (2), and a structural unit represented by general formula (3) may be contained.

[0115]

[0116] In general formula (1), V represents an organic group with 4 to 10 valence having 4 to 40 carbon atoms, and W represents an organic group with 2 to 8 valence having 4 to 40 carbon atoms. a and b each represent integers from 0 to 6. R 1 and R 2 represents a group selected from the group consisting of hydroxyl groups, carboxyl groups, sulfonic acid groups, and thiol groups, and multiple R 1 and R 2 Each may be the same or different.

[0117]

[0118] In general formula (2), X and Y each independently represent an organic group having 4 to 40 carbon atoms and 2 to 8 valence. R 3 and R 4 Each represents independently a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. c and d each represent integers from 0 to 4, and e and f each represent integers from 0 to 2.

[0119]

[0120] In the general formula (3), T and U each independently represent an organic group with 4 to 40 carbon atoms and 2 to 8 valence.

[0121] (A) In order to make the resin alkali-soluble, it is preferable that the general formula (1) has a+b>0.

[0122] In addition, it is preferable that general formula (2) has c+d+e+f>0. In general formula (2), in the case of a polyimide precursor, it is preferable that X and Y in general formula (2) have aromatic groups. In addition, X in general formula (2) has an aromatic group, e>2, and has a carboxyl group or a carboxyester group at the ortho position of the aromatic amide group, and forms an imide ring by dehydration and ring closure.

[0123] In addition, in the general formula (2), in the case of a polybenzoxazole precursor, X in the general formula (2) has an aromatic group, d>0, and has a hydroxyl group at the ortho position of the aromatic amide group, and has a structure that forms a benzoxazole ring by dehydration and ring closure.

[0124] (A) The number of repetitions n of the structural unit represented by the general formula (1), general formula (2) or general formula (3) in the resin is preferably 5 to 100,000, and more preferably 10 to 100,000.

[0125] In addition, (A) the resin may have other structural units in addition to the structural units represented by general formula (1), general formula (2), or general formula (3). Examples of other structural units include cardo structures, siloxane structures, etc., but are not limited to these. In this case, it is preferable to have the structural units represented by general formula (1) or general formula (2) as the main constituent units. Here, the main constituent units refer to having 50 mole% or more of the structural units represented by general formula (1), general formula (2), or general formula (3) among the total number of structural units, and it is more preferable to have 70 mole% or more.

[0126] Among the above general formula (1), V-(R 1 ) a , among the above general formula (2), (OH) c -X-(COOR 3 ) eAnd in the above general formula (3), T represents an acid residue. V is a tetravalent to 10-valent organic group having 4 to 40 carbon atoms, and among them, an organic group having 4 to 40 carbon atoms containing an aromatic ring or a cyclic aliphatic group is preferred. X and T are divalent to 8-valent organic groups having 4 to 40 carbon atoms, and among them, an organic group having 4 to 40 carbon atoms containing an aromatic ring or an aliphatic group is preferred.

[0127] Examples of dicarboxylic acids as acidic components constituting the acid residue include terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid, bis(carboxyphenyl)hexafluoropropane, biphenyl dicarboxylic acid, benzophenone dicarboxylic acid, triphenyl dicarboxylic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorosebacic acid, 1,9-nonane diacid, dodecane diacid, tridecane diacid, tetradecane diacid, pentadecane diacid, hexadecane diacid, heptadecane diacid, octadecane diacid, nonadecane diacid, eicosan diacid, hen-eicosan diacid, docosan diacid, tricosan diacid, tetracosan diacid, pentadecane diacid, hexacosan diacid, heptadecane diacid, octadecane diacid, Nonacotic acid, triacontanic acid, etc., examples of tricarboxylic acids such as trimellitic acid, trimesic acid, diphenyl ether tricarboxylic acid, biphenyl tricarboxylic acid, etc., examples of tetracarboxylic acids such as pyromellitic acid, 3,3',4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid, 2,2',3,3'-biphenyltetracarboxylic acid, 3,3',4,4'-diphenyl ether tetracarboxylic acid, 3,3',4,4'-benzophenone tetracarboxylic acid, 2,2',3,3'-benzophenone tetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)propane, 2,2-bis(2,3-dicarboxyphenyl)propane, 1,1-bis(3,4-dicarboxyphenyl)ethane, 1,1-bis(2,3-dicarboxyphenyl)ethane, bis(3,4-dicarboxyphenyl)methane, bis(2,3-dicarboxyphenyl)methane, bis(3,4-dicarboxyphenyl)ether, 1,2,5,6-naphthalenetetracarboxylic acid, 9,9-bis(3,4-dicarboxyphenyl)fluorene, 9,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluorene, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,5,6-pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane and aromatics of the structure shown below Examples include tetracarboxylic acid, butanetetracarboxylic acid, cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, etc., but are not limited to these.You may use two or more of these.

[0128]

[0129] During the meal, R 17 represents an oxygen atom, C(CF3)2, or C(CH3)2. R 18 and R 19 means a hydrogen atom, or a hydroxyl group.

[0130] These acids can be used as they are, or as acid anhydrides, halides, or active esters.

[0131] W-(R in the above general formula (1) 2 ) b , (OH) in the above general formula (2) d -Y-(COOR 4 ) f And U in the above general formula (3) represents a residue of diamine. W, Y, and U are organic groups having 2 to 8 carbon atoms with 4 to 40 carbon atoms, and among them, organic groups having 4 to 40 carbon atoms containing an aromatic ring or a cyclic aliphatic group are preferred.

[0132] Specific examples of diamines constituting the residues of a diamine include hydroxyl group-containing diamines such as bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(3-amino-4-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)methylene, bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxy)biphenyl, and bis(3-amino-4-hydroxyphenyl)fluorene; sulfonic acid-containing diamines such as 3-sulfonic acid-4,4'-diaminodiphenyl ether; thiol group-containing diamines such as dimercaptophenylenediamine; 3,4'-diaminodiphenyl ether; 4,4'-diaminodiphenyl ether; 3,4'-diaminodiphenylmethane; and 4,4'-diaminodiphenylmethane. 3,4'-Diaminodiphenylsulfone, 4,4'-Diaminodiphenylsulfone, 3,4'-Diaminodiphenylsulfide, 4,4'-Diaminodiphenylsulfide, 1,4-Bis(4-aminophenoxy)benzene, benzine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, Bis(4-aminophenoxyphenyl)sulfone, Bis(3-aminophenoxyphenyl)sulfone, Bis(4-aminophenoxy)biphenyl, Bis{4-(4-aminophenoxy)phenyl}ether, 1,4-Bis(4-aminophenoxy)benzene, 2,2'-Dimethyl-4,4'-Diaminobiphenyl, 2,2'-Diethyl-4,4'-Diaminobiphenyl, 3,3'-Dimethyl-4,4'-Diaminobiphenyl, Aromatic diamines such as 3,3'-diethyl-4,4'-diaminobiphenyl, 2,2',3,3'-tetramethyl-4,4'-diaminobiphenyl, 3,3',4,4'-tetramethyl-4,4'-diaminobiphenyl, and 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, or compounds in which some of the hydrogen atoms of the aromatic rings thereof are substituted with carbon 1 to 10 alkyl groups, fluoroalkyl groups, halogen atoms, etc., diamines having a nitrogen-containing heteroaromatic ring such as 2,4-diamino-1,3,5-triazine (guanamin), 2,4-diamino-6-methyl-1,3,5-triazine (acetoguanamin), and 2,4-diamino-6-phenyl-1,3,5-triazine (benzoguanamine). 1,3-Bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane, 1,Examples include silicondiamines such as 3-bis(p-aminophenyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(p-aminophenethyl)-1,1,3,3-tetramethyldisiloxane, and 1,7-bis(p-aminophenyl)-1,1,3,3,5,5,7,7-octamethyltetrasiloxane, alicyclic diamines such as cyclohexyldiamine and methylenebiscyclohexylamine, and diamines having the structures shown below. Two or more of these may be used.

[0133]

[0134] During the meal, R 20 represents an oxygen atom, C(CF3)2, or C(CH3)2. R 21 ~R 24 Each represents a hydrogen atom or a hydroxyl group independently.

[0135] Among these, it is preferable to contain at least one diamine having the structure shown below in order to improve alkali development properties or the transmittance of (A) resin and its cured film.

[0136]

[0137] During the meal, R 20 represents an oxygen atom, C(CF3)2, or C(CH3)2. R 21 ~R 22 Each represents a hydrogen atom or a hydroxyl group independently.

[0138] These diamines can be used as diamines, or as diisocyanate compounds and trimethylsilylated diamines obtained by reacting diamines with phosgene.

[0139] In addition, (A) the resin preferably contains a structural unit selected from alkylene groups and alkylene ether groups. These groups may include aliphatic rings. As for the structural unit selected from alkylene groups and alkylene ether groups, the structural unit represented by the general formula (4) is particularly preferred.

[0140]

[0141] Among the general formula (4), R 5 ~R 8 Each independently represents an alkylene group having 1 to 6 carbon atoms. 9 ~R 16 Each represents independently a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 6 carbon atoms. However, the structures shown in parentheses are different. g, h, and i each represent independently integers from 0 to 35, and g+h+i>0.

[0142] Examples of structural units represented by the general formula (4) include ethylene oxide, propylene oxide, butylene oxide, etc., and may be straight, branched, or cyclic.

[0143] (A) By having a structural unit selected from alkylene groups and alkylene ether groups, the elastic modulus of (A) the resin and the cured film can be lowered, thereby reducing the bending of the display device and alleviating stress concentration, thereby suppressing peeling or cracking. In addition, the transmittance of light at 450 nm before and after curing can be improved.

[0144] (A) It is preferable that the resin contains a structural unit selected from the alkylene group and the alkylene ether group in W in the general formula (1) or Y in the general formula (2). By doing so, the mechanical properties of the resin and its cured film, particularly the elongation, can be improved, and the light transmittance at 450 nm before and after curing can be improved, and in addition, high chemical resistance, high adhesion to the substrate metal, and resistance to the constant temperature and humidity test (HAST) can be obtained by promoting ring closure in the cured film of the resin composition during low-temperature heat treatment.

[0145] Specific examples of diamines containing a group selected from alkylene groups and alkylene ether groups include ethylenediamine, 1,3-diaminopropane, 2-methyl-1,3-propanediamine, 1,4-diaminobutane, 1,5-diaminopentane, 2-methyl-1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-cyclohexanediamine, 1,3-cyclohexanediamine, 1,4-cyclohexanediamine, 1,2-bis(aminomethyl)cyclohexane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane. Examples include 4,4'-methylenebis(cyclohexylamine), 4,4'-methylenebis(2-methylcyclohexylamine), KH-511, ED-600, ED-900, ED-2003, EDR-148, EDR-176, D-200, D-400, D-2000, THF-100, THF-140, THF-170, RE-600, RE-900, RE-2000, RP-405, RP-409, RP-2005, RP-2009, RT-1000, HE-1000, HT-1100, HT-1700 (product names above, manufactured by HUNTSMAN Co., Ltd.), etc.

[0146] In addition, among these diamines, bonds such as -S-, -SO-, -SO2-, -NH-, -NCH3-, -N(CH2CH3)-, -N(CH2CH2CH3)-, -N(CH(CH3)2)-, -COO-, -CONH-, -OCONH-, -NHCONH- may be included.

[0147] It is preferable that the diamine residue containing a group selected from alkylene groups and alkylene ether groups be included in an amount of 5 mol% or more of the total diamine residue, and more preferable that it be included in an amount of 10 mol% or more. In addition, it is preferable that it be included in an amount of 40 mol% or less of the total diamine residue, and more preferable that it be included in an amount of 30 mol% or less. By maintaining the above range, it is possible to improve the developability in an alkaline developer, improve the mechanical properties of (A) the resin and its cured film, particularly the elongation, and also improve the light transmittance at 450 nm after curing, and in addition, obtain high chemical resistance, high adhesion to metal surfaces, and resistance to the constant temperature and humidity test (HAST) by promoting ring closure in low-temperature heat treatment of the cured film of the resin composition.

[0148] Diamine residues having an aliphatic polysiloxane structure may be copolymerized within a range that does not reduce heat resistance. Adhesion to the substrate can be improved by copolymerizing diamine residues having an aliphatic polysiloxane structure. Specifically, as diamine components, examples include bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc., copolymerized in an amount of 1 to 15 mol% of the total diamine residues. Copolymerizing within this range is preferable in that it improves adhesion to a substrate such as a silicon wafer and does not reduce solubility in an alkaline solution.

[0149] (A) A resin having acidic groups at the ends of the main chain can be obtained by sealing the ends of the resin with a monoamine, acid anhydride, acid chloride, or monocarboxylic acid having acidic groups. Known monoamines, acid anhydrides, acid chlorides, and monocarboxylic acids having acidic groups may be used, or multiple may be used. The content of the end sealant, such as the monoamine, acid anhydride, acid chloride, or monocarboxylic acid, is preferably 2 to 25 mol% with respect to 100 mol% of the total sum of the acid component and amine component constituting the resin (A).

[0150] (A) It is preferable that the resin has a weight average molecular weight of 10,000 or more and 100,000 or less. If the weight average molecular weight is 10,000 or more, the mechanical properties of the cured film after curing can be improved. More preferably, the weight average molecular weight is 20,000 or more. Meanwhile, it is preferable that the weight average molecular weight is 100,000 or less so that the developability with various developers can be improved, and also that the weight average molecular weight is 50,000 or less so that the developability with alkaline solutions can be improved.

[0151] The weight-average molecular weight (Mw) can be determined using GPC (gel permeation chromatography). For example, it can be measured using N-methyl-2-pyrrolidone (hereinafter abbreviated as NMP) as the developing solvent and obtained by polystyrene conversion.

[0152] (A) The resin content is preferably 3 to 55 mass% of the total content including the solvent, and more preferably 5 to 40 mass%. By keeping it within the above range, the viscosity can be adjusted to an appropriate level when performing spin coating or slit coating.

[0153] In addition, phenolic resins, polymers containing radical polymerizable monomers having alkali-soluble groups as monomer units, such as polyhydroxystyrene or acrylic, siloxane polymers, cyclic olefin polymers, and cardo resins may be used. These resins may be known, used individually, or used in combination with multiple resins.

[0154] In addition, in the present invention, it is preferable that the resin composition comprising (A) the resin contains (B) a photosensitive agent (hereinafter referred to as component (B)).

[0155] (B) By including component, the resin composition can be given photosensitivity and a fine aperture pattern can be formed.

[0156] (B) The component is a compound whose chemical structure changes in response to ultraviolet light, and examples include photogenerators, photobase generators, and photopolymerization initiators. When a photogenerator is used as component (B), acid is generated in the light-irradiated portion of the photosensitive resin composition, and since the solubility of the light-irradiated portion in the alkaline developer increases, a positive type pattern in which the light-irradiated portion dissolves can be obtained.

[0157] (B) When a photobase generating agent is included as a component, a base is generated in the light-irradiated portion of the resin composition, and since the solubility of the light-irradiated portion in the alkaline developer is reduced, a negative type pattern in which the light-irradiated portion becomes insoluble can be obtained.

[0158] (B) When a photopolymerization initiator is included as a component, radicals are generated in the light-irradiated portion of the resin composition, radical polymerization proceeds, and by becoming insoluble in the alkaline developer, a negative type pattern can be formed. In addition, UV curing during exposure is promoted, and sensitivity can be improved.

[0159] A resin composition comprising (A) a resin and (B) a component preferably has positive photosensitive properties in terms of microprocessability.

[0160] Among the above-mentioned (B) components, a photocatalytic agent is preferred from the perspective of high sensitivity and fine processability. Examples of photocatalytic agents include quinone diazide compounds, sulfonium salts, phosphonium salts, diazonium salts, iodinium salts, etc. Additionally, sensitizers, etc., may be included as needed.

[0161] As for the quinone diazide compound, a compound in which the sulfonic acid of naphthoquinone diazide is esterified to a compound having a phenolic hydroxyl group is preferred. As for the compound having a phenolic hydroxyl group used here, known compounds may be used, and examples of preferred compounds may include those in which 4-naphthoquinone diazide sulfonic acid or 5-naphthoquinone diazide sulfonic acid is introduced by an ester bond, but other compounds may also be used.

[0162] In addition, it is preferable that 50 mol% or more of the total functional groups of a compound having phenolic hydroxyl groups are substituted with quinone diazides. By using a quinone diazide compound substituted at 50 mol% or more, the affinity of the quinone diazide compound for an alkaline aqueous solution is reduced. As a result, the solubility of the resin composition in the unexposed portion in an alkaline aqueous solution is significantly reduced. Furthermore, upon exposure, the quinone diazide sulfonyl group is converted into indenecarboxylic acid, and a high dissolution rate of the photosensitive resin composition in the exposed portion in an alkaline aqueous solution can be obtained. That is, consequently, the ratio of the dissolution rates of the exposed portion and the unexposed portion of the composition is increased, thereby enabling the acquisition of a pattern with high resolution.

[0163] By including such quinone diazide compounds, a resin composition having positive photosensitive properties that are sensitized to the i-ray (365 nm), h-ray (405 nm), g-ray (436 nm) of a general mercury lamp or to a broadband including them can be obtained. Additionally, component (B) may be included as a single type or in combination of two or more types, and a resin composition with high sensitivity can be obtained.

[0164] Examples of quinone diazides include 5-naphthoquinone diazide sulfonyl groups, 4-naphthoquinone diazide sulfonyl groups, and those containing 4-naphthoquinone diazide sulfonyl groups and 5-naphthoquinone diazide sulfonyl groups in the same molecule.

[0165] Examples of naphthoquinone diazide sulfonyl ester compounds include 5-naphthoquinone diazide sulfonyl ester compound (B-1) and 4-naphthoquinone diazide sulfonyl ester compound (B-2), but in the present invention, it is preferable to include compound (B-1). Compound (B-1) has an absorption range extending to the g-line region of mercury lamps and is suitable for g-line exposure and full-length exposure. Additionally, upon curing, it reacts with resin (A) to form a cross-linked structure, thereby improving chemical resistance. Furthermore, compared to compound (B-2), it exhibits less discoloration after heat treatment, which is also desirable from the perspective of light transmittance after heat treatment. The content ratio of compound (B-1) is preferably 55 mass% or more and 100 mass% or less relative to the total amount of photosensitive agent (compound (B-1) + compound (B-2). By using this content ratio, a cured film with high light transmittance can be obtained.

[0166] Quinone diazide compounds can be synthesized by known methods through the esterification reaction of a compound having a phenolic hydroxyl group and a quinone diazide sulfonate compound. By using quinone diazide compounds, resolution, sensitivity, and residual film rate are further improved.

[0167] (B) The molecular weight of the component is preferably 300 or more, more preferably 350 or more, and preferably 3,000 or less, more preferably 1,500 or less, in terms of heat resistance, mechanical properties and adhesion of the film obtained by heat treatment.

[0168] (B) Among the components, sulfonium salts, phosphonium salts, and diazonium salts are preferred because they adequately stabilize the acid components generated by exposure. Among these, sulfonium salts are preferred.

[0169] (B) The content of component (B) is preferably 0.1 parts by mass or more and 100 parts by mass or less per 100 parts by mass of resin (A). If the content of component (B) is 0.1 parts by mass or more and 100 parts by mass or less, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0170] (B) When the component contains a quinone diazide compound, the content of component (B) is more preferably 1 part by mass or more and more preferably 3 parts by mass or more per 100 parts by mass of component (A). In addition, 100 parts by mass or less is more preferably and 80 parts by mass or less is more preferably. If the content is 1 part by mass or more and 100 parts by mass or less, it is possible to impart photosensitivity while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0171] (B) When the component contains a sulfonium salt, a phosphonium salt, or a diazonium salt, the content of component (B) is more preferably 0.1 parts by mass or more, more preferably 1 part by mass or more, and particularly preferably 3 parts by mass or more, per 100 parts by mass of resin (A). In addition, 100 parts by mass or less is more preferably 80 parts by mass or less is more preferably 50 parts by mass or less is particularly preferably. If the content is 0.1 parts by mass or more and 100 parts by mass or less, it is possible to impart photosensitivity while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0172] (B) When a photobase generating agent is included as a component, specific examples of photobase generating agents include amide compounds, ammonium salts, etc.

[0173] Examples of amide compounds include 2-nitrophenylmethyl-4-methacryloyloxypiperidin-1-carboxylate, 9-anthrylmethyl-N,N-dimethylcarbamate, 1-(anthraquinone-2yl)ethylimidazolecarboxylate, (E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidin, etc.

[0174] Examples of ammonium salts include 1,2-diisopropyl-3-(bis-dimethylamino)methylene)guanidium 2-(3-benzoylphenyl)propionate, (Z)-{[bis(dimethylamino)methylene]amino}-N-cyclohexylamino)methaneiminium tetrakis(3-fluorophenyl)borate, 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidium n-butyltriphenylborate, etc.

[0175] (B) When a photobase generator is included as a component, the content of component (B) in the resin composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more, per 100 parts by mass of resin (A). If the content is within the above range, the sensitivity during exposure can be improved. Meanwhile, the content is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less. If the content is within the above range, the resolution after development can be improved.

[0176] (B) When a photopolymerization initiator is included as a component, the photopolymerization initiator is preferably a benzyl ketal-based photopolymerization initiator, an α-hydroxyketone-based photopolymerization initiator, an α-aminoketone-based photopolymerization initiator, an acylphosphine oxide-based photopolymerization initiator, an oxime ester-based photopolymerization initiator, an acridine-based photopolymerization initiator, a benzophenone-based photopolymerization initiator, an acetophenone-based photopolymerization initiator, an aromatic keto ester-based photopolymerization initiator, a benzoic acid ester-based photopolymerization initiator, or a titanocene-based photopolymerization initiator, and each of the known ones may be used or multiple ones may be used. Among these, from the perspective of improving sensitivity during exposure, α-hydroxyketone-based photopolymerization initiators, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, oxime ester-based photopolymerization initiators, acridine-based photopolymerization initiators, or benzophenone-based photopolymerization initiators are more preferred, and α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, and oxime ester-based photopolymerization initiators are even more preferred.

[0177] (B) When a photopolymerization initiator is included as a component, the content of component (B) in the resin composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more, per 100 parts by mass of resin (A). If the content is within the above range, the sensitivity during exposure can be improved. Meanwhile, the content is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less. If the content is within the above range, the resolution after development can be improved.

[0178] In the present invention, the resin composition comprising (A) the resin preferably contains (C) a thermal crosslinking agent (hereinafter referred to as component (C)).

[0179] A thermal crosslinking agent refers to a resin or compound having at least two thermally reactive functional groups within the molecule. Examples of thermally reactive functional groups include compounds having alkoxymethyl groups, methylol groups, cyclic ether groups, etc.

[0180] In the present invention, it is desirable to include component (C) because it improves chemical resistance.

[0181] In the present invention, it is preferable that the cured film, which is formed by curing a resin composition comprising (A) resin, (B) component, and (C) component, has a high transmittance. By doing so, light emitted in all directions from a light-emitting element is suppressed from being absorbed in the cured film formed by curing the resin composition comprising (A) resin and (B) component or (C) component, thereby increasing light extraction efficiency and improving brightness.

[0182] In order to obtain such characteristics, it is desirable that component (C) itself has a high light transmittance at 450 nm, has high heat resistance, and has a low formation of, for example, a quinone structure which is one of the colored structures, or that the reaction product of component (B) and (A) resin has a high light transmittance, or that the decomposition product of component (C) itself or the reaction product derived from the decomposition product has a high light transmittance.

[0183] As a thermal crosslinking agent, one or more compounds selected from alkoxymethyl compounds and methylol compounds (hereinafter abbreviated as (C-1) component) may be included. By including the (C-1) component, the crosslinking becomes stronger, and the chemical resistance of the cured film, such as flux liquid, can be further improved. Specific examples of the (C-1) component include the following methylol compounds or alkoxymethyl compounds in which a hydrogen atom of a methylol group is substituted with a methyl group or an alkyl group having 2 to 10 carbon atoms, but are not limited to the following structures.

[0184]

[0185]

[0186] In addition, as component (C), one or more compounds having a cyclic ether group (hereinafter abbreviated as component (C-2)) may be included. By including component (C-2), the reaction can occur even at low temperatures of 160°C or lower, and the crosslinking can be made stronger, thereby further improving the chemical resistance of the cured film.

[0187] (C-2) Specific examples of the ingredients include "Denacol (registered trademark) EX-212L, Denacol EX-214L, Denacol EX-216L, Denacol EX-850L, Denacol EX-321L (all manufactured by Nagase Chemtex Co., Ltd.), GAN, GOT (all manufactured by Nippon Kayaku Co., Ltd.), "Epicort (registered trademark) 828, Epicort 1002, Epicort 1750, Epicort 1007, YX4000, YX4000H, YX8100-BH30, E1256, E4250, E4275 (all manufactured by Mitsubishi Chemical Corporation), "Epiclon (registered trademark) 850-S, Epiclone HP-4032, Epiclone HP-7200, Epiclone HP-820, Epiclone HP-4700, Epiclone HP-4770, Epiclone HP4032 (all manufactured by Dainippon Ink Kagaku Kogyo Co., Ltd.), TECHMORE VG3101L (manufactured by Printec Co., Ltd.), "Tepic" (registered trademark) S, Tepic G, Tepic P (all manufactured by Nissin Kagaku Kogyo Co., Ltd.), Epototo YH-434L (manufactured by Toto Kasei Co., Ltd.), EPPN502H, NC-3000, NC-6000, XD-1000 (manufactured by Nippon Kayaku Co., Ltd.), Epiclone N695, HP7200 (all manufactured by Dainippon Ink Kagaku Kogyo Co., Ltd.), "Eternacol" (registered trademark) EHO, Eternacol OXBP, Eternacol OXTP, Eternacol Examples include OXMA (produced by Ube Kosan Co., Ltd.), oxetanophenol novolak, etc.

[0188] (C-2) Among the components, a compound having a cyclic ether group having a triarylmethane structure or a biphenyl structure is preferred, and a compound having a cyclic ether group having a biphenyl structure is more preferred.

[0189] Specifically, examples include YX4000, YX4000H, YL6677 (all manufactured by Mitsubishi Chemical Corporation), TECHMORE VG3101L (manufactured by Printec Corporation), NC-3000 (manufactured by Nippon Kayaku Corporation), etc.

[0190] A compound having a cyclic ether group having a biphenyl structure can appropriately lower the glass transition temperature of (A) resin or (B) component to impart fluidity, thereby alleviating stress concentration on the display device and reducing warping of the display device.

[0191] In addition, as a (C) component, one or more types of compounds containing a structural unit represented by the following general formula (5) (hereinafter abbreviated as (C-3) component) may be included.

[0192]

[0193] Among the general formula (5), R 25 is a divalent organic group having an alkylene group or an alkylene ether group having 1 to 15 carbon atoms, examples include a methylene group, an ethylene group, a propylene group, a butylene group, an ethylene oxide group, a propylene oxide group, a butylene oxide group, etc., and may be in a straight chain, a branched chain, or a cyclic form. Furthermore, some of the substituents of the divalent organic group having an alkylene group or an alkylene ether group having 1 to 15 carbon atoms may have a cyclic ether group, an alkylsilyl group, an alkoxysilyl group, an aryl group, an aryl ether group, a carboxyl group, a carbonyl group, an allyl group, a vinyl group, a heterocyclic group, or other substituents, or may be a combination thereof. 26 and R 27 Each represents a hydrogen atom or a methyl group independently.

[0194] Since the (C-3) component itself has flexible alkylene groups and rigid aromatic groups, the hardened film obtained by including the (C-3) component can have heat resistance, improved elongation, and low stress.

[0195] (C-3) Examples of crosslinking groups included in the component include, but are not limited to, acrylic groups, methylol groups, alkoxymethyl groups, and cyclic ether groups. Among these, cyclic ether groups are preferred because they can react with the hydroxyl groups of (A) the resin to improve the heat resistance of the cured film and can react without dehydration.

[0196] Compounds containing structural units represented by the general formula (5) may be specifically exemplified as follows, but are not limited to the following structures.

[0197]

[0198] o during food 1 is an integer from 1 to 20, o 2 is an integer from 1 to 5. In terms of achieving both improved heat resistance and elongation, o 1 is an integer from 3 to 7, o 2 It is preferable that is an integer between 1 and 2.

[0199] The above (C) component may be contained in a combination of two or more types.

[0200] (C) From the perspective of obtaining a cured film with high chemical resistance to, for example, flux liquid, etc., the content of component is preferably 5 parts by mass or more per 100 parts by mass of (A) resin, and more preferably 10 parts by mass or more. In addition, from the perspective of obtaining a cured film with high chemical resistance to, for example, flux liquid, etc. while maintaining the storage stability of the resin composition, and also suppressing delamination from the metal wiring or cracking of the cured film after a reliability test of the wiring to which the cured film is applied, it is preferable that the content be 100 parts by mass or less per 100 parts by mass of (A) resin, more preferably 90 parts by mass or less, and more preferably 80 parts by mass or less.

[0201] (A) A resin composition containing a resin may, if necessary, contain other components such as a radical polymerizable compound, an antioxidant, a solvent, a compound having a phenolic hydroxyl group, an adhesion improver, an adhesion improver, and a surfactant.

[0202] Next, a method for manufacturing the resin composition of the present invention will be described. For example, a resin composition can be obtained by mixing and dissolving the above (A) resin with, if necessary, component (B), component (C), each radical polymerizable compound, antioxidant, solvent, compound having a phenolic hydroxyl group, adhesion improver, adhesion improver, surfactant, etc.

[0203] Known methods for dissolution include heating or stirring.

[0204] The viscosity of the resin composition is preferably 2 to 5,000 mPa·s. By adjusting the solid content concentration so that the viscosity is 2 mPa·s or higher, it becomes easier to obtain the desired film thickness. On the other hand, if the viscosity is 5,000 mPa·s or lower, it becomes easier to obtain a resin film with high uniformity. A resin composition having such viscosity can be easily obtained, for example, by setting the solid content concentration to 5 to 60 mass%. Here, solid content concentration refers to components other than the solvent.

[0205] It is desirable to filter the obtained resin composition using a filtration filter to remove dust or particles. The materials for the filtration filter include polypropylene (PP), polyethylene (PE), nylon (NY), and polytetrafluoroethylene (PTFE), but polyethylene or nylon is preferred.

[0206] (A) When forming a cured film by curing a resin composition containing resin, a resin sheet may be formed from the resin composition containing resin (A), and then the resin sheet may be cured to form the film.

[0207] A resin sheet refers to a sheet formed on a substrate using the above-mentioned resin composition. Specifically, it refers to a resin sheet obtained by applying a resin composition to a substrate and drying it. A film such as polyethylene terephthalate (PET) may be used as the substrate to which the resin composition is applied. When the resin sheet is bonded to a substrate such as a silicon wafer for use, if it is necessary to peel off the substrate, it is preferable to use a substrate coated with a release agent such as silicone resin on its surface, as this allows for easy peeling of the resin sheet from the substrate.

[0208] The display device of the present invention is preferably used in various LED displays and other display devices, or various lamps for vehicles.

[0209] Examples

[0210] The present invention will be explained below with reference to examples, but the present invention is not limited by these examples.

[0211] Meanwhile, the display device in the example or the cured film made of the resin composition used in the display device was evaluated by the following method.

[0212] <Method for Evaluating Defect Rate After Reliability Testing>

[0213] Ten display devices each having three light-emitting elements as described in the following examples and comparative examples were prepared. These display devices were tested for reliability using a HAST device (HAST CHAMBER EHS-211MD manufactured by Tabai Spec Co., Ltd.), and after applying a voltage of 5V at a temperature of 85°C, humidity of 85%, and for 2000 hours, a visual inspection of the light-emitting element was performed. For the ten display devices, the ratio of the number of light-emitting elements that did not light up was evaluated as the defect rate.

[0214] Method for Evaluating Light Extraction Efficiency of Display Devices

[0215] The light extraction efficiency was measured using the display devices described in the following examples and comparative examples. For the measurement, an external quantum efficiency measuring device C9920 manufactured by Hamamatsu Photonics Co., Ltd. was used. The light extraction efficiency was evaluated as a relative evaluation with respect to the value, with the light extraction efficiency of the display device in Example 1 set to 1.00.

[0216] <Synthesization Example 1: Synthesis of a Hydroxyl Group-Containing Diamine Compound>

[0217] 18.3 g (0.05 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (manufactured by Central Glass Co., Ltd., hereinafter referred to as BAHF) was dissolved in 100 mL of acetone and 17.4 g (0.3 mol) of propylene oxide (manufactured by Tokyo Kasei Co., Ltd.), and cooled to -15°C. A solution of 20.4 g (0.11 mol) of 3-nitrobenzoyl chloride (manufactured by Tokyo Kasei Co., Ltd.) dissolved in 100 mL of acetone was added dropwise to this. After the addition was finished, the mixture was stirred at -15°C for 4 hours, and then returned to room temperature. The precipitated white solid was separated by filtration and vacuum dried at 50°C.

[0218] 30g of the obtained white solid was placed in a 300mL stainless steel autoclave and dispersed in 250mL of methylcellosolve, and 2g of 5% palladium-carbon (manufactured by Wako Junyaku Co., Ltd.) was added. Hydrogen was introduced into the balloon, and a reduction reaction was carried out at room temperature. After about 2 hours, the reaction was terminated after confirming that the balloon did not shrink any further. After the reaction was terminated, the palladium compound acting as a catalyst was removed by filtration, and the mixture was concentrated using a rotary evaporator to obtain a hydroxyl group-containing diamine compound represented by the following formula.

[0219]

[0220] <Synthesization Example 2 Synthesis of Polybenzoxazole Precursor (a-1)>

[0221] Under a dry nitrogen stream, 1.5 g (0.0075 mol) of 4,4'-diaminodiphenyl ether (hereinafter referred to as 4,4'-DAE), 12.8 g (0.035 mol) of BAHF, and 5.0 g (0.0050 mol) of RT-1000 (manufactured by HUNTSMAN Inc.) were dissolved in 100 g of NMP. To this, diimidazole dodecanoate (7.4 g, 0.023 mol) and 1,1'-(4,4'-oxybenzoyl)diimidazole (hereinafter referred to as PBOM) (8.1 g, 0.023 mol) were added together with 25 g of NMP, and the mixture was reacted at 85°C for 3 hours. Next, 0.6 g (0.0025 mol) of 1,3-bis(3-aminopropyl)tetramethyldisiloxane (hereinafter referred to as SiDA), 0.8 g (0.0025 mol) of 4,4'-oxydiphthalic anhydride (hereinafter referred to as ODPA), and 0.8 g (0.0050 mol) of 5-norbornene-2,3-dicarboxylic anhydride (hereinafter referred to as NA) were added together with 25 g of NMP, and the mixture was reacted at 85°C for 1 hour. After the reaction was finished, the mixture was cooled to room temperature, 13.2 g (0.25 mol) of acetic acid was added together with 25 g of NMP, and the mixture was stirred at room temperature for 1 hour. After stirring was finished, the solution was added to 1.5 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried for three days in a 50°C air dryer to obtain a powder of polybenzoxazole precursor (a-1).

[0222] <Synthesization Example 3 Synthesis of Polybenzoxazole Precursor (a-2)>

[0223] Under a dry nitrogen stream, 27.5 g of BAHF (0.075 mol) was dissolved in 257 g of NMP. To this, 17.2 g of PBOM (0.048 mol) was added together with 20 g of NMP, and the mixture was reacted at 85°C for 3 hours. Subsequently, 20.0 g of RT-1000 (0.02 mol), 1.2 g of SiDA (0.005 mol), and 14.3 g of PBOM (0.04 mol) were added together with 50 g of NMP, and the mixture was reacted at 85°C for 1 hour. Additionally, 3.9 g of NA (0.024 mol) was added with 10 g of NMP as a terminal sealant, and the mixture was reacted at 85°C for 30 minutes. After the reaction was finished, the mixture was cooled to room temperature, 52.8 g of acetic acid (0.50 mol) was added together with 87 g of NMP, and the mixture was stirred at room temperature for 1 hour. After stirring was finished, the solution was added to 3 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a 50°C air dryer for three days to obtain a powder of polybenzoxazole precursor (a-2).

[0224] <Synthetic Example 4 Synthesis of Polyimide Precursor (a-3)>

[0225] Under a dry nitrogen stream, 51.9 g (0.086 mol) of the hydroxyl group-containing diamine obtained in Synthesis Example 1 and 1.0 g (0.004 mol) of SiDA were dissolved in 200 g of NMP. 31.0 g (0.10 mol) of ODPA was added to this, and the mixture was stirred at 40°C for 2 hours. Then, 1.1 g (0.01 mol) of 3-aminophenol (manufactured by Tokyo Kasei Kogyo Co., Ltd.) was added together with 10 g of NMP as a terminal sealant, and the mixture was reacted at 40°C for 1 hour. Afterward, a solution of 7.1 g (0.06 mol) of dimethylformamide dimethylacetal (manufactured by Mitsubishi Rayon Co., Ltd., hereinafter referred to as DFA) diluted with 5 g of NMP was added dropwise. After adding, stirring was continued at 40°C for 2 hours. After stirring was finished, the solution was added to 2 L of water, and the precipitate of the polymer solid was collected by filtration. Additionally, the solution was washed three times with 2 L of water, and the collected polymer solid was dried in a vacuum dryer at 50°C for 72 hours to obtain a polyimide precursor (a-3).

[0226] <Synthetic Example 5 Synthesis of Polyimide Precursor (a-4)>

[0227] Under a dry nitrogen stream, 41.1 g (0.068 mol) of the hydroxyl group-containing diamine obtained in Synthesis Example 1, 18.0 g (0.018 mol) of RT-1000, and 1.0 g (0.004 mol) of SiDA were dissolved in 200 g of NMP. 31.0 g (0.10 mol) of ODPA was added to this, and the mixture was stirred at 40°C for 2 hours. Then, 1.1 g (0.01 mol) of 3-aminophenol was added along with 10 g of NMP as a terminal sealant, and the mixture was reacted at 40°C for 1 hour. Afterward, a solution of 6.0 g (0.05 mol) of DFA diluted with 5 g of NMP was added dropwise. After adding the solution, stirring was continued at 40°C for 2 hours. After stirring was finished, the solution was added to 2 L of water, and the polymer solid precipitate was collected by filtration. In addition, the collected polymer solid was washed three times with 2 L of water and dried in a vacuum dryer at 50°C for 72 hours to obtain a polyimide precursor (a-4).

[0228] <Synthetic Example 6 Synthesis of Polyimide (a-5)>

[0229] Under a dry nitrogen stream, 29.3 g (0.08 mol) of BAHF, 1.2 g (0.005 mol) of SiDA, and 3.3 g (0.03 mol) of 3-aminophenol as a terminal sealant were dissolved in 80 g of NMP. To this, 31.2 g (0.1 mol) of ODPA was added along with 20 g of NMP, reacted at 60°C for 1 hour, and then stirred at 180°C for 4 hours. After stirring was finished, the solution was added to 3 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 20 hours to obtain a powder of polyimide (a-5).

[0230] <Synthetic Example 7 Synthesis of Cardo Resin (a-6)>

[0231] Under a dry nitrogen stream, 198.53 g of a 50% PGMEA solution of an equiequivalent reaction product of bisphenolfluorene-type epoxy resin and acrylic acid (manufactured by Shin-Nippon Tetsu Co., Ltd., product name "ASF-400" solution), 39.54 g (0.12 mol) of benzophenone tetracarboxylic acid dihydride, 8.13 g (0.08 mol) of succinic anhydride, 48.12 g of PGMEA, and 0.45 g of triphenylphosphine were added to a 4-neck flask equipped with a reflux condenser, heated to 120–125°C and stirred for 1 hour, and further heated and stirred at 75–80°C for 6 hours. Subsequently, 8.6 g of glycidyl methacrylate was added and stirred at 80°C for 8 more hours to form a skeletal structure having two cyclic structures bonded to a quaternary carbon atom constituting a cyclic structure. Suji (a-6) was obtained.

[0232] <Synthetic Example 8 Synthesis of Polyimide Precursor (a-7)>

[0233] Under a dry nitrogen stream, 3.2 g (0.03 mol) of 1,4-paraphenylenediamine and 12.0 g (0.06 mol) of 4,4'-DAE were dissolved in 200 g of NMP. 31.0 g (0.10 mol) of ODPA was added to this, and the mixture was stirred at 40°C for 2 hours. Then, 1.1 g (0.01 mol) of 3-aminophenol (manufactured by Tokyo Kasei Kogyo Co., Ltd.) was added along with 10 g of NMP as a terminal sealant, and the mixture was reacted at 40°C for 1 hour. Afterward, a solution of 7.1 g (0.06 mol) of DFA diluted with 5 g of NMP was added dropwise. After adding, stirring was continued at 40°C for 2 hours. After stirring was finished, the solution was added to 2 L of water, and the polymer solid precipitate was collected by filtration. In addition, the collected polymer solid was washed three times with 2 L of water and dried in a vacuum dryer at 50°C for 72 hours to obtain a polyimide precursor (a-7).

[0234] <Synthetic Example 9 Synthesis of Polyimide Precursor (a-8)>

[0235] 155.1 g (0.50 mol) of ODPA was placed in a 2-liter separable flask, and 134.0 g (1.00 mol) of 2-hydroxyethyl methacrylate (HEMA) and 400 g of γ-butyrolactone were added. A reaction mixture was obtained by adding 79.1 g of pyridine while stirring at room temperature. After the exothermic reaction was finished, the mixture was cooled to room temperature and left to stand for 16 hours. Then, under ice cooling, a solution of 206.3 g (1.00 mol) of dicyclohexylcarbodiimide (DCC) dissolved in 180 g of γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring. Next, a suspension of 16.2 g (0.15 mol) of 1,4-paraphenylenediamine and 60.1 g (0.30 mol) of 4,4'-DAE in 350 g of γ-butyrolactone was added over 60 minutes while stirring. After stirring for another 2 hours at room temperature, 30 ml of ethyl alcohol was added and stirred for 1 hour. Subsequently, 400 g of γ-butyrolactone was added. The precipitate formed in the reaction mixture was removed by filtration to obtain the reaction solution.

[0236] The reaction solution was added to 3 L of water to obtain a white precipitate. The precipitate was collected by filtration, washed twice with water, washed once with isopropanol, and then dried in a vacuum dryer at 50°C for 72 hours to obtain a polyimide precursor (a-8).

[0237] <Synthesization Example 10 Synthesis of a Photosensitive Agent (Quinone Diazide Compound) (b-1)>

[0238] Under a dry nitrogen stream, 21.2 g (0.05 mol) of 4,4'-[1-[4-[1-(4-hydroxyphenyl-1)-1-methylethyl]phenyl]ethylidene]bisphenol (manufactured by Honshu Kagaku Kogyo Co., Ltd., hereinafter referred to as TrisP-PA) and 26.8 g (0.10 mol) of 5-naphthoquinone diazide sulfonic acid chloride (manufactured by Toyo Kosei Co., Ltd., NAC-5) were dissolved in 450 g of γ-butyrolactone at room temperature. To this, 12.7 g of triethylamine mixed with 50 g of γ-butyrolactone was added dropwise, ensuring that the temperature in the system did not exceed 35°C. After adding, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered, and the filtrate was added to water. Subsequently, the precipitated precipitate was collected by filtration and washed with 1 L of 1% hydrochloric acid solution. Afterwards, it was washed twice with an additional 2 L of water. The precipitate was dried in a vacuum dryer to obtain a quinone diazide compound (b-1) represented by the following formula.

[0239]

[0240] <Synthesization Example 11 Synthesis of a Photosensitive Agent (Quinone Diazide Compound) (b-2)>

[0241] Under a dry nitrogen stream, 21.2 g (0.05 mol) of TrisP-PA and 26.8 g (0.10 mol) of 4-naphthoquinone diazide sulfonic acid chloride (Toyo Kosei Inc., NAC-5) were dissolved in 450 g of γ-butyrolactone at room temperature. To this, 12.7 g of triethylamine mixed with 50 g of γ-butyrolactone was added dropwise, ensuring that the temperature in the system did not exceed 35°C. After adding, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered, and the filtrate was added to water. Subsequently, the precipitated precipitate was collected by filtration and further washed with 1 L of 1% hydrochloric acid solution. Then, it was washed two more times with 2 L of water. This precipitate was dried in a vacuum dryer to obtain a quinone diazide compound (b-2) represented by the following formula.

[0242]

[0243] <Synthetic Example 12: Synthesis of Acrylic Resin (a-10)>

[0244] 150 g of dimethylaminomethanol (hereinafter “DMEA”; manufactured by Tokyo Kasei Kogyo Co., Ltd.) was added to a reaction vessel under a nitrogen atmosphere, and the temperature was raised to 80°C using an oil bath. Thereupon, a mixture consisting of 20 g of ethyl acrylate (hereinafter “EA”), 40 g of 2-ethylhexyl methacrylate (hereinafter “2-EHMA”), 20 g of styrene (hereinafter “St”), 15 g of acrylic acid (hereinafter “AA”), 0.8 g of 2,2’-azobisisobutyronitrile, and 10 g of DMEA was added dropwise over a period of 1 hour. After the addition was completed, a polymerization reaction was carried out for 6 hours at 80°C under a nitrogen atmosphere. Subsequently, 1 g of hydroquinone monomethyl ether was added to stop the polymerization reaction. Next, a mixture consisting of 5 g of glycidyl methacrylate (hereinafter "GMA"), 1 g of triethylbenzylammonium chloride, and 10 g of DMEA was added dropwise over 0.5 hours. After the addition was finished, an additional reaction was carried out for 2 hours at 80°C under a nitrogen atmosphere. The resulting reaction solution was purified with methanol to remove unreacted impurities and further vacuum dried for 24 hours to obtain an acrylic resin (a-10) with a copolymerization ratio (by mass): EA / 2-EHMA / St / GMA / AA = 20 / 40 / 20 / 5 / 15. The acid value of the obtained resin (a-10) was 103 mgKOH / g.

[0245] <Synthetic Example 13 Synthesis of Acrylic Resin (a-11)>

[0246] A methyl methacrylate / methacrylic acid / styrene copolymer (weight ratio 30 / 40 / 30) was synthesized by the method described in Example 1 of Japanese Patent No. 3120476. For every 100 parts by weight of the obtained copolymer, 40 parts by weight of glycidyl methacrylate were added, the mixture was reprecipitated with purified water, filtered, and dried to obtain an acrylic resin (a-11) having a weight average molecular weight of 15,000 and an acid value of 110 mgKOH / g.

[0247] <Preparation Example 1: Preparation of Photosensitive Conductive Paste 1>

[0248] In a 100mL clean bottle, 10.0g of resin (a-10) as the resin, 0.50g of "IRGACURE (registered trademark)" OXE-01 (manufactured by Chiba Japan Co., Ltd.) as the photopolymerization initiator, 5.0g of DMEA as the solvent, and 2.0g of "Light Acrylate (registered trademark)" BP-4EA (manufactured by Kyoei Co., Ltd.) as a compound having unsaturated double bonds were added and mixed using a rotation-revolution vacuum mixer "Awatori Rentaro ARE-310" (manufactured by Shinki Co., Ltd.) to obtain 17.5g of resin solution (solid content 71.4 mass%).

[0249] 17.50 g of the obtained resin solution, 44.02 g of silver particles with an average particle diameter of 1.0 μm, and 0.28 g of carbon black with an average particle diameter of 0.05 μm were mixed and kneaded using a 3-roller mill "EXAKT M-50" (manufactured by EXAKT) to obtain 61.8 g of photosensitive conductive paste 1. In addition, the average particle diameters of the silver particles and carbon black were observed using a scanning electron microscope (SEM) at a magnification of 10,000x and a field of view of 12 μm, and for 40 randomly selected primary particles of silver particles and carbon black, the maximum width of each was measured and the numerical average value was calculated.

[0250] <Preparation Example 2 Preparation of Colorant Dispersion (DC-1)>

[0251] As a coloring agent, zirconia compound particles Zr-1 (manufactured by Nissin Engineering Co., Ltd.) prepared by the thermal plasma method were used. 200g of Zr-1, 114g of a 35% by weight solution of propylene glycol monomethyl ether acetate (PGMEA) of an acrylic polymer (P-1), 25g of "DISPERBYK" (registered trademark) LPN-21116 having a tertiary amino group and a quaternary ammonium salt as a polymer dispersant, and 661g of PGMEA were added to a tank and stirred with a homomixer for 20 minutes to obtain a preliminary dispersion. A pre-dispersion obtained was supplied to a Kotobuki Kogyo Co., Ltd. disperser Ultra Apex Mill equipped with a centrifugal separator filled with 75 volume% of 0.05 mmφ zirconia beads, and dispersion was performed for 3 hours at a rotation speed of 8 m / s to obtain a colorant dispersion (DC-1) with a solid content concentration of 25 wt% and a colorant / resin (weight ratio) of 80 / 20.

[0252] <Preparation Example 3 Preparation of Photosensitive Coloring Resin Composition 1>

[0253] To 283.1 g of coloring agent dispersion (DC-1), a solution prepared by dissolving 184.4 g of a 35 wt% PGMEA solution of resin (a-11), 50.1 g of dipentaerythritol hexaacrylate (Nippon Kayaku Co., Ltd.) as a polyfunctional monomer, 7.5 g of "Irgacure" (registered trademark) 907 (BASF) and 3.8 g of "KAYACURE" (registered trademark) DETX-S (Nippon Kayaku Co., Ltd.) as photopolymerization initiators, 12.0 g of KBM5103 (Shin-Etsu Chemical Co., Ltd.) as an adhesion improver, and 3 g of a 10 wt% PGMEA solution of the silicone-based surfactant "BYK" (registered trademark) 333 (Big Chem) as a surfactant in 456.1 g of PGMEA was added, and the total A photosensitive colored resin composition 1 was obtained with a solid content concentration of 20 wt% and a coloring agent / resin (weight ratio) of 30 / 70.

[0254] <Preparation Example 4 Preparation of Colorant Dispersion (DC-2)>

[0255] According to the method described in Japanese Patent Publication No. 2008-517330, the surface elemental composition of carbon black (CB-Bk1) modified with sulfonic acid groups on the surface was (C: 88%, O: 7%, Na: 3%, S: 2%), and regarding the state of the S element, the component attributed to CS and SS among the S2p peak components was 90%, and the component attributed to SO and SOx was 10%, and the BET value was 54 m2 / g.

[0256] Carbon black CB-Bk1 (200g), a 40 mass% solution (94g) of propylene glycol monomethyl ether acetate of acrylic resin (a-11), a 40 mass% solution (31g) of Big Chem Japan LPN21116 as a polymer dispersant, and propylene glycol monomethyl ether acetate (675g) were introduced into a tank and stirred for 1 hour with a homo mixer (Toksh Kikaze) to obtain a preliminary dispersion. Then, the preliminary dispersion was supplied to an Ultra Apex Mill (Kotobuki Kogyo) equipped with a centrifugal separator filled with 70% 0.05mmφ zirconia beads (Nikkato YTZ balls), and dispersion was performed for 2 hours at a rotation speed of 8 m / s to obtain a colored dispersion DC-2 with a solid content concentration of 25 mass% and a pigment / resin (mass ratio) of 80 / 20.

[0257] <Preparation Example 5 Preparation of Photosensitive Coloring Resin Composition 2>

[0258] To 534.8 g of a coloring agent dispersion (DC-2), a solution was added comprising 122.1 g of a 40 mass% PGMEA solution of resin (a-11), 47.3 g of dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd.) as a polyfunctional monomer, 11.8 g of "ADEKA Cruz" NCI-831 (manufactured by ADEKA Co., Ltd.) as a photopolymerization initiator, 12.0 g of KBM5103 (manufactured by Shin-Etsu Chemical Co., Ltd.) as an adhesion improver, and 4 g of a 10 mass% PGMEA solution of the silicone-based surfactant "BYK (registered trademark)" 333 (manufactured by Big Chem Co., Ltd.) dissolved in 194.0 g of PGMEA, to obtain a total solid content concentration of 25 mass% and a coloring agent / resin (weight ratio) of 45 / 55. A photosensitive colored resin composition 2 was obtained.

[0259] The components (a-9), (b-3), (c-1), (c-2), other components, and solvents used in the examples and comparative examples are shown below.

[0260] (a-9) Phenolic resin MEHC-7851 (manufactured by Meiwa Kasei Co., Ltd.),

[0261] (c-1) HMOM-TPHAP (Manufactured by Honshu Kagaku Kogyo Co., Ltd.)

[0262] (c-2) YX4000H (Made by Mitsubishi Chemical Corporation)

[0263]

[0264] (b-3): Photopolymerization initiator NCI-831 (ADEKA Inc.)

[0265] Other ingredients:

[0266] (f-1): Dipentaerythritol hexaacrylate (DPHA, manufactured by Kyoei Co., Ltd.))

[0267] (f-2): 2,4-Diethylthioxantone (KAYACURE DETX-S, manufactured by Nippon Kayaku Co., Ltd.)

[0268] (f-3): 2,5-Bis(1,1,3,3-tetramethylbutyl)hydroquinone (DOHQ, manufactured by Wako Junyaku Kogyo Co., Ltd.)

[0269] menstruum:

[0270] GBL: Gamma Butyrolactone

[0271] PGMEA: Propylene glycol monomethyl ether acetate

[0272] Table 1 shows the formulation of a resin composition consisting of (A) a resin, (B) a photosensitive agent, and (C) a thermal crosslinking agent, etc. Table 2-1 shows the resin composition used in the example, the inorganic insulating film, the total thickness of the insulating film (μm), the number of layers of the cured film, the number of layers of the inorganic insulating film, the layer of the inorganic insulating film, the thickness of the inorganic insulating film (μm), α / β, β / γ, and the failure rate evaluation level after reliability testing of the display device. In addition, Table 2-2 shows the resin composition used in the example, the shape and length of the aperture pattern processed from the cured film, and the light extraction efficiency from the display device.

[0273] [Table 1]

[0274]

[0275] [Table 2-1]

[0276]

[0277] [Table 2-2]

[0278]

[0279] Regarding the evaluation level (1), the failure rate of each of the 10 display devices is 0.25 or less, which is Level A; the failure rate of the display devices is greater than 0.25 and 0.30 or less, which is Level B; the failure rate of the display devices is 0.35 or less, which is Level C; the failure rate of the display devices is 0.40 or less, which is Level D; the failure rate of the display devices is greater than 0.40 and 0.45 or less, which is Level E; and the failure rate of the display devices exceeds 0.45, which is Level F. Levels A to E are levels that do not cause problems in actual use, and Level F is a level where the failure rate of the display devices is high and causes problems in actual use.

[0280] Regarding the evaluation level (2), level A is defined as the light extraction efficiency of the display device being 1.20 or higher for Example 1, level B is defined as the light extraction efficiency of the display device being 1.10 or higher for Example 1, level C is defined as the light extraction efficiency of the display device being 1.00 or higher for Example 1, and level D is defined as the light extraction efficiency of the display device being less than 1.00 for Example 1.

[0281] (Example 1) (Configuration of FIG. 13)

[0282] An embodiment of the display device of the present invention is described according to the cross-sectional view of the manufacturing process of FIG. 13. As shown in FIG. 13a, a glass substrate was used as the support substrate (26). A bonding material made of polyimide was placed on the glass substrate, and a light-emitting element (2), which is a light-emitting element, was placed on the support substrate (26) (Process (D1)). The thickness of the light-emitting element (2) was 5 μm, the length of one side was 30 μm, and the length of the other side was 50 μm.

[0283] Next, as shown in FIG. 13b, a resin film (21) was formed by applying the resin composition 1 described in Table 1 to the support substrate (26) and the light-emitting element (2) to a thickness of 7 μm after heat treatment (process (D2)).

[0284] Next, as shown in FIG. 13c, an i-line (365 nm) was irradiated by passing a mask having a desired pattern over the resin film (21). The exposed resin film (21) was developed using a 2.38 mass% aqueous tetramethylammonium (TMAH) solution, and a plurality of opening patterns (12) penetrating in the thickness direction of the resin film (21) were patterned (Process (D3)). The shape of the opening patterns was circular, and among the opening patterns, the longest length of the bottom portion in the smallest area was a diameter of 2 μm.

[0285] Next, the resin film (21) was heat-treated at 110°C for 30 minutes in an atmosphere with an oxygen concentration of 100 ppm or less, and then further heat-treated at 230°C for 60 minutes to cure it, thereby forming a cured film (3) with a thickness of 7 μm (Process (D4)). The resin film (21) is cured as is to become the cured film (3).

[0286] Next, as shown in FIG. 13d, a titanium barrier metal was sputtered onto the hardened film (3), and a copper seed layer was additionally formed thereon by sputtering. After that, a photoresist layer was formed, and then, by plating, a metal wiring (4) made of copper that is electrically connected to the light-emitting element (2) was formed on the opening pattern (12) of the hardened film (3) and on the surface of a part of the hardened film (3), and then the photoresist, seed layer, and barrier metal were removed (Process (D5)). The thickness of the metal wiring (4a) formed on the surface of a part of the hardened film (3) was 5 μm.

[0287] Next, as shown in FIG. 13e, the processes (D2), (D3), (D4) and (D5) were repeated so that the thickness after heat treatment was 7 μm, thereby forming two layers of the hardened film (3).

[0288] Next, as shown in FIG. 13f, silicon oxide (SiO2) was formed as an inorganic insulating film on the hardened film (3) and on the metal wiring (4) by the CVD method to a thickness of 0.4 μm (corresponding to process (D6)).

[0289] After that, as shown in Fig. 13g, a process (D2) is performed to make the thickness 10㎛ after heat treatment, and processes (D3), (D4), (D5) and a process (D7) to remove the inorganic insulating film by etching are performed to form a total of three layers of hardened film (3).

[0290] As a result, the total thickness of the insulating layer was 24.4 μm.

[0291] After that, in FIG. 13h, a barrier metal (9) was formed by sputtering on the opening pattern (12) of the hardened film (3) and a solder bump (10) was formed. Then, as shown in FIG. 13i, the solder was reflowed at 250°C for 1 minute and electrically connected to a light-emitting element driving substrate (7) having a driver IC, which is a driving element (8d), through the solder bump (10). After that, the support substrate (26) was peeled off and the opposing substrate (5) was bonded using an adhesive or the like, thereby obtaining a display device 1 having a plurality of light-emitting elements (2).

[0292] (Example 2)

[0293] A display device 2 was obtained by performing the same method as in Example 1, except that the resin composition 1 of Example 1 was changed to a resin sheet made of resin composition 2 and a resin film (21) was formed by lamination.

[0294] (Examples 3–14)

[0295] Display devices 3 to 14 were obtained by performing the same method as in Example 1, except that resin composition 1 of Example 1 was changed to resin compositions 3 to 14.

[0296] (Example 15)

[0297] As shown in FIG. 14a, a partition (16) was formed on a support substrate (26) (corresponding to process D8). Next, as shown in FIG. 14b, a light-emitting element (2) was formed between the partitions (16) (corresponding to process D1). Except for this, a display device 15 was manufactured using the same process as in Example 4. Meanwhile, the thickness of the light-emitting element (2) was 5 μm, and the thickness of the partition (16) was formed to be 7 μm. The partition (16) was made of an acrylic resin containing a known white pigment.

[0298] (Example 16)

[0299] As shown in FIG. 15d, after the process (D4) of forming the hardened film shown in FIG. 13c in the same manner as in Example 4, a reflective film (15) was formed by sputtering aluminum at a predetermined location to a thickness of 0.2 μm, avoiding the metal wiring (4) that is formed later (process (D9)). Except for this, a display device 16 was manufactured in the same manner as in Example 4.

[0300] (Example 17)

[0301] As shown in FIG. 16a, a light-emitting element (2), which is a light-emitting element, was placed on a support substrate (26) (Process (D1)). Next, as shown in FIG. 16b, silicon oxide (SiO2) was formed as an inorganic insulating film by the CVD method to a thickness of 0.4 μm (corresponding to Process (D6)). As shown in FIG. 16c, Process (D2) was performed to make the thickness 7 μm after heat treatment, and Process (D3), Process (D4), Process (D5), and Process (D7) were performed to remove the inorganic insulating film by etching to form a first layer of hardened film (3). After that, Process (D2), Process (D3), Process (D4), and Process (D5) were repeated to form three layers of hardened film (3). The second layer of hardened film (3) was formed to a thickness of 7 μm, and the third layer of hardened film (3) was formed to a thickness of 10 μm. Except for that, display device 17 was manufactured using the same process as in Example 4.

[0302] (Example 18)

[0303] As shown in FIG. 17d, after the process (D4) of forming the cured film shown in FIG. 13c in the same manner as in Example 4, silicon oxide (SiO2) was formed as an inorganic insulating film by the CVD method to a thickness of 0.4 μm (corresponding to process (D6)). As shown in FIG. 17e, process (D2) was performed to make the thickness 7 μm after heat treatment, and processes (D3), (D4), (D5), and a process (D7) of removing the inorganic insulating film by etching were performed to form a second cured film (3). After that, processes (D2), (D3), (D4), and (D5) were performed to form a third layer of the cured film (3). The third layer of the cured film (3) was formed to a thickness of 10 μm. Except for this, the display device 18 was manufactured in the same manner as in Example 4.

[0304] (Example 19)

[0305] As shown in FIG. 18f, after the process (D4) of forming the hardened film shown in FIG. 13e in the same manner as in Example 4, a process (D2) was performed to make the thickness 7 μm after heat treatment, and processes (D3), (D4), and (D5) were performed to form a third hardened film (3). After that, silicon oxide (SiO2) was formed as an inorganic insulating film by the CVD method to make the thickness 0.4 μm (corresponding to process (D6). In order to connect with the barrier metal (9) and solder bump process (10) formed later, a process (process (D7)) was performed to remove the inorganic insulating film by etching, and the display device 19 was manufactured in the same manner as in Example 4.

[0306] (Example 20)

[0307] A display device 20 was obtained by performing the same method as in Example 4, except that the thickness of the inorganic insulating film in Example 4 was changed to 2.0 μm.

[0308] (Example 21)

[0309] A display device 21 was obtained by performing the same method as in Example 4, except that the thickness of the inorganic insulating film in Example 4 was changed to 1.0 μm.

[0310] (Example 22)

[0311] A display device 22 was obtained by performing the same method as in Example 4, except that the thickness of the inorganic insulating film in Example 4 was changed to 0.1 μm.

[0312] (Example 23)

[0313] A display device 23 was obtained by performing the same method as in Example 4, except that the thickness of the inorganic insulating film of Example 4 was changed to 1.0 μm, the thickness of the second layer cured film (3) was changed to 15 μm, and the thickness of the third layer cured film (3) was changed to 15 μm.

[0314] (Example 24)

[0315] A display device 24 was obtained by performing the same method as in Example 4, except that the thickness of the inorganic insulating film of Example 4 was changed to 1.0 μm, the thickness of the second layer cured film (3) was changed to 7 μm, and the thickness of the third layer cured film (3) was changed to 15 μm.

[0316] (Example 25)

[0317] A display device 25 was obtained by performing the same method as in Example 4, except that the thickness of the inorganic insulating film of Example 4 was changed to 1.0 μm, the thickness of the second layer cured film (3) was changed to 15 μm, and the thickness of the third layer cured film (3) was changed to 7 μm.

[0318] (Example 26)

[0319] The resin composition 1 of Example 1 was changed to resin composition 4, and as shown in FIG. 13i, a groove was formed on the side of the light-emitting element driving substrate by laser processing, and then formed in the order of titanium and copper by sputtering, and then formed by plating to form a metal wiring (4c) (Process D10). Other than that, the same method as in Example 1 was used to obtain a display device 28.

[0320] (Example 27)

[0321] An embodiment of the display device of the present invention is described according to the cross-sectional view of the manufacturing process of FIG. 19. First, as shown in FIG. 19a, an electrode pad (27) made of copper was placed on a support substrate (26) (corresponding to process (E1)). The thickness of the electrode pad was 0.2 μm.

[0322] Next, as shown in FIG. 19b, a resin film (21) was formed by applying the resin composition 4 described in Table 1 to the support substrate (26) and the metal pad (27) to a thickness of 10 μm after heat treatment (corresponding to process (E2)).

[0323] Next, as shown in FIG. 19c, a plurality of opening patterns (12) were formed on the resin film (21) under the same conditions as the photolithography process shown in Example 1 (corresponding to process (E3)).

[0324] Next, a cured film (3) with a thickness of 10 μm was formed by curing the resin film (21) under the same conditions as in Example 1 (corresponding to process (E4)).

[0325] Furthermore, in FIG. 19c, in order to improve the adhesion between the hardened film (3) and the metal wiring (4), a barrier metal such as titanium was sputtered onto the hardened film (3), and additionally, a copper seed (seed layer) was formed on it by sputtering.

[0326] Next, as shown in FIG. 19d, after forming a photoresist layer, a metal wiring (4) made of copper was formed in the opening pattern (12) of the cured film (3) by plating (corresponding to process (E5)). Then, the photoresist, seed layer, and barrier metal were removed.

[0327] Next, as shown in FIG. 19e, silicon oxide (SiO2) was formed as an inorganic insulating film on the hardened film (3) and on the metal wiring (4) by the CVD method to a thickness of 0.4 μm (corresponding to process (E6)). Then, as shown in FIG. 19f, a process (process (E7)) was performed to remove the inorganic insulating film by etching.

[0328] After that, the process (E2), process (E3), process (E4) and process (E5) were repeated twice to form three layers of a hardened film (3) having metal wiring (4) in the hardened film (3) as shown in FIG. 19h. As a result, the total thickness of the insulating layer was 24.4 μm.

[0329] Next, as shown in FIG. 19i, a light-emitting element (2) was placed on the hardened film (3) to maintain electrical connection with the metal wiring (4) (corresponding to process (E8)). The thickness of the light-emitting element (2) was 7 μm.

[0330] Next, as shown in FIG. 19j, a resin film (21) made of resin composition 4 was formed on the cured film (3) and the light-emitting element (2), and cured by heat treatment to form the cured film (3). In addition, after heat treatment at 110°C for 30 minutes under an atmosphere with an oxygen concentration of 100 ppm or less, the cured film (3) was further heat-treated at 230°C for 60 minutes to form the cured film (3).

[0331] Next, as shown in FIG. 19k, the support substrate (26) was peeled off, and the light-emitting element driving substrate (7) having a driver IC, which is a driving element (8), was electrically connected via solder bumps (10).

[0332] In addition, as shown in FIG. 19k, on the side of the light-emitting element driving substrate, a groove is formed by laser processing, and then formed in the order of titanium and copper by sputtering, and then copper is formed by plating to form a metal wiring (4c) (corresponding to process E9).

[0333] A display device 29 having a plurality of light-emitting elements (2) is obtained by bonding a counter substrate (5) to a light-emitting element (2) using an adhesive or the like.

[0334] (Example 28)

[0335] In the side of the light-emitting element driving substrate (7) of Example 26, a conductive film (28) was used as shown in FIG. 20i, and the photosensitive conductive paste 1 of Preparation Example 1 was used as the conductive film (28) (corresponding to process D11). Except for that, the same method as in Example 26 was used to obtain a display device 30. The fabrication of the conductive film (28) is as follows.

[0336] <Production of the challenge screen (28)>

[0337] Photosensitive conductive paste 1 was applied to a release PET film coated with a release agent on a PET film with a thickness of 16 μm, such that the film thickness after drying was 6.0 μm, and the obtained coating film was dried in a drying oven at 100°C for 10 minutes. Subsequently, an exposure device equipped with an ultra-high pressure mercury lamp was used at 350 mJ / cm² 2 After exposure with an exposure amount, a 0.1 mass% aqueous sodium carbonate solution was used as a developer, and a pattern was obtained by spray developing for 30 seconds at a pressure of 0.1 MPa. Subsequently, the obtained pattern was cured in a drying oven at 140°C for 30 minutes to obtain a transfer sample with wiring arranged thereon. The line width of the obtained pattern was 50 μm, and the line length was 90 mm. The transfer sample was bonded to both sides so that a part of the wiring was placed on a glass edge having an R chamfer, and the glass side was pressed against a hot plate at 130°C for 30 seconds. Then, the remaining part was transferred using a hot roll laminator at 130°C and 1.0 m / min.

[0338] (Example 29)

[0339] In the side of the light-emitting element driving substrate (7) of Example 27, a conductive film (28) was used as shown in FIG. 20i, and the photosensitive conductive paste 1 described in Example 28 was used as the conductive film (28) (corresponding to process E12). Other than that, the same method as in Example 27 was used to obtain a display device 31.

[0340] (Example 30)

[0341] As shown in FIG. 21a, a light-blocking portion (29) was formed on a support substrate (26) (corresponding to process D12). Next, as shown in FIG. 21a, a light-emitting element (2) was formed between the light-blocking portions (29) (corresponding to process D1). Except for this, a display device 32 was manufactured using the same process as in Example 3. The fabrication of the light-blocking layer (29) is as follows.

[0342] <Production of the shading layer (29)>

[0343] Colored resin composition 1 was applied to a support substrate (26) to a thickness of 1 μm after heat treatment, and the coating film was heated and dried on a hot plate at 100°C for 2 minutes. With respect to this dried film, ultraviolet light was irradiated at 200 mJ / cm² using an exposure device equipped with an ultra-high pressure mercury lamp. 2 The material was exposed to light with an exposure amount. Then, a pattern film was obtained by developing using an alkaline developer of a 0.045 wt% aqueous potassium hydroxide solution and subsequently washing with pure water. The obtained pattern film was post-baked in a hot air oven at 230°C for 30 minutes to obtain a light-blocking layer.

[0344] (Example 31)

[0345] A display device 33 was manufactured using the same process as in Example 30, except that the light-shielding portion (29) of Example 30 was changed to a colored resin composition 2 to form the light-shielding portion (29).

[0346] (Comparative Examples 1–2)

[0347] A display device 26 to 27 was obtained by changing the resin composition 1 of Example 1 to resin composition 15 to 16 and performing the same method as Example 1 except that process (D6) and process (D7) were omitted.

[0348] As a result, display devices 26 and 27 had poor failure rates after reliability testing because warping and cracking occurred in the display devices. In addition, the light extraction efficiency was also insufficient.

[0349] Industrial applicability

[0350] The display device of the present invention can preferably be used in large signage displays, televisions and monitors, automotive displays, smartphones, smartwatches, wearable devices, tablets, laptop PCs, etc., but its use is not limited to these. Explanation of the symbols

[0351] 1; Display device 2; light-emitting element 3; hardened film 4, 4c; metal wiring 4a; Thickness of metal wiring placed on the surface of the hardened film 4b; Thickness of metal wiring extending in an opening pattern penetrating in the thickness direction within the hardened film 5; Opposing substrate 6; electrode terminal 7; Light-emitting element driving substrate 8; Driving element 9; Barrier Metal 10; Solder bump 11a; Designated area A 1lb; Designated area B 12; opening pattern 13; bottom surface of the metal wiring (4) 14; longest length of the bottom section 15; reflective film 16; bulkhead 17; external substrate 18; Total thickness of the insulating film 19; Inorganic insulating film 20; hardened film 21; resin membrane 22; thickness β of the inorganic insulating film between the hardened film positioned at the first furthest position and the hardened film positioned at the second furthest position 23; Thickness α of the hardened film placed at the 1st furthest position 24; Thickness γ of the hardened film placed at the second furthest position 25; Thickness of the first hardened film 26; supporting substrate 27; metal pad 28; Challenge membrane 29; Light-blocking section 30; TFT 31; TFT insulating layer 32; Wiring 33; contact hole

Claims

Claim 1 A display device having at least metal wiring, a cured film, an inorganic insulating film, and a plurality of light-emitting elements, wherein the cured film is a film formed by curing a resin composition comprising (A) a resin, and the light-emitting element is an inorganic light-emitting diode having a pair of electrode terminals on one side, wherein the pair of electrode terminals are connected to a plurality of metal wirings extending into the cured film and the inorganic insulating film, and wherein electrical insulation between the plurality of metal wirings is maintained by the cured film and the inorganic insulating film, wherein the cured film has a plurality of layers, and the inorganic insulating film is arranged to be in contact with at least a portion between the layers of the plurality of cured films, and the inorganic insulating film is arranged to be in contact with the cured film on both sides between the layers of the plurality of cured films, and the sandwich structure has a sandwich structure in which the inorganic insulating film is arranged between a cured film positioned at the first furthest position relative to the light-emitting element and a cured film positioned at the second furthest position relative to the light-emitting element, in a vertical direction in which the plurality of cured films are stacked in a vertical direction relative to a plane in which the plurality of light-emitting elements are arranged, and wherein the inorganic insulating film is arranged between a cured film positioned at the first furthest position relative to the light-emitting element. A display device in which, when the thickness of a hardened film placed at a position is α (㎛), the thickness of the inorganic insulating film between a hardened film placed at a first-to-farthest position and a hardened film placed at a second-to-farthest position is β (㎛), and the thickness of a hardened film placed at a second-to-farthest position is γ (㎛), α > γ, 6 ≤ α / β ≤ 100, and 0.01 ≤ β / γ ≤ 0.

75. Claim 2 A display device having at least metal wiring, a cured film, an inorganic insulating film, and a plurality of light-emitting elements, wherein the cured film is a film formed by curing a resin composition comprising (A) resin, and the light-emitting element is an inorganic light-emitting diode having a pair of electrode terminals on one side, wherein the pair of electrode terminals are connected to a plurality of metal wirings extending into the cured film and the inorganic insulating film, and wherein electrical insulation between the plurality of metal wirings is maintained by the cured film and the inorganic insulating film, wherein the cured film has a plurality of layers, and the inorganic insulating film is arranged to be in contact with at least a portion between the layers of the plurality of cured films, and wherein the resin (A) contains a structural unit represented by the general formula (4). (of general formula (4), R 5 ~R 8 Each independently represents an alkylene group having 1 to 6 carbon atoms. 9 ~R 16 Each represents independently a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 6 carbon atoms. However, the structures shown within parentheses are distinct. g, h, and i each represent independently integers from 0 to 35, and g+h+i>0.) Claim 3 A display device according to claim 1 or 2, wherein the number of layers of the hardened film is 2 or more and 10 or fewer. Claim 4 A display device according to claim 1 or 2, wherein the thickness of the inorganic insulating film is 0.2 μm or more and 1.0 μm or less. Claim 5 A display device according to claim 1 or 2, wherein the hardened film covers a surface other than the light extraction surface of the light-emitting element. Claim 6 A display device according to claim 1 or 2, wherein a reflective film is further formed on the hardened film. Claim 7 A display device according to claim 1 or 2, having a partition wall having a thickness greater than or equal to the thickness of the light-emitting elements between a plurality of the light-emitting elements. Claim 8 A display device according to claim 1 or 2, wherein a partition wall having a thickness greater than or equal to the thickness of the light-emitting element is disposed between a plurality of the light-emitting elements within the cured film covering the light-emitting elements. Claim 9 A display device according to claim 1 or 2, wherein the light-emitting element is an inorganic light-emitting diode having a side length of 5 μm or more and 700 μm or less. Claim 10 A display device according to claim 1 or 2, further comprising a driving element and a substrate, wherein the driving element is connected to a light-emitting element through metal wiring, and at least a portion of the metal wiring extends to the side of the substrate. Claim 11 A display device according to claim 1 or 2, having a light-blocking portion between a plurality of the light-emitting elements. Claim 12 A display device according to claim 1 or 2, wherein the resin (A) comprises one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and copolymers thereof. Claim 13 A display device according to claim 1 or 2, wherein the resin composition comprising the resin (A) further comprises (B) a photosensitive agent. Claim 14 A display device according to claim 1 or 2, wherein the resin composition comprising the resin (A) further comprises (C) a thermal crosslinking agent. Claim 15 In claim 14, the above (C) thermal crosslinking agent is a compound having a cyclic ether group having a biphenyl structure. Claim 16 A display device according to claim 1 or 2, wherein the resin composition comprising the (A) resin is a positive type photosensitive material. Claim 17 delete Claim 18 delete Claim 19 delete

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