Substrate processing method using low temperature developer and semiconductor device manufacturing apparatus using the same

Abstract

A substrate processing method comprises: supplying a first developer at a first temperature onto a substrate of a developing device to perform a developing process; supplying a process fluid at a second temperature lower than the first temperature onto the substrate to replace the remaining first developer with the second developer after the developing process; transferring the substrate from the developing device to a supercritical drying device; and supplying at least one of a supercritical fluid and a subcritical fluid to the supercritical drying device to dry the second developer.

Description

Technology Field

[0001] The present disclosure relates to a substrate processing method using a low-temperature developing solution and a semiconductor device manufacturing apparatus using the same. Background Technology

[0002] Recently, the adoption of photolithography processes utilizing EUV radiation has been steadily increasing, making it possible to realize finer patterns within semiconductor devices. As patterns become increasingly miniaturized and linewidths decrease, the conventional drying method—which involves drying the developer by rotating the substrate at high speed after the development process—results in pattern collapse. This occurs because the surface tension of the developer causes attractive forces to act between patterns during drying. Consequently, the supercritical drying process, which utilizes supercritical fluids with virtually no surface tension, is increasingly replacing the conventional drying process. The problem to be solved

[0003] The objective according to the embodiments of the present disclosure is to provide a substrate processing method and a semiconductor device manufacturing apparatus capable of preventing the dissolution of a photoresist pattern during substrate transfer. means of solving the problem

[0004] A substrate processing method according to one embodiment of the present disclosure comprises: supplying a first developer at a first temperature onto a substrate of a developing device to perform a developing process; supplying a process fluid at a second temperature lower than the first temperature onto the substrate to replace the remaining first developer with the second developer after the developing process; transferring the substrate from the developing device to a supercritical drying device; and supplying at least one of a supercritical fluid and a subcritical fluid to the supercritical drying device to dry the second developer.

[0005] A semiconductor device manufacturing apparatus according to one embodiment of the present disclosure comprises: a developing apparatus for performing a developing process on an exposed photoresist layer on a substrate; a supercritical drying apparatus for drying the substrate using at least one of a supercritical fluid and a subcritical fluid; and a transfer robot for transferring the substrate from the developing apparatus to the supercritical drying apparatus, wherein the developing apparatus comprises: a chamber for receiving the substrate; a first tank for storing a first developer at a first temperature; a second tank for storing a second developer at a second temperature lower than the first temperature; a first fluid supply unit connecting the first tank and the chamber; and a second fluid supply unit connecting the second tank and the chamber.

[0006] A semiconductor device manufacturing apparatus according to one embodiment of the present disclosure comprises: a developing apparatus for performing a developing process on an exposed photoresist layer on a substrate; a supercritical drying apparatus for drying the substrate by supplying at least one of a supercritical fluid and a subcritical fluid; and a transfer robot for transferring the substrate from the developing apparatus to the supercritical drying apparatus, wherein the developing apparatus comprises: a chamber for receiving the substrate; a first source storage unit for storing pressurized CO2; a first tank for storing a first developer solution at a first temperature; a second tank for storing a second developer solution at a second temperature; a first source supply unit connecting the first source storage unit and the second tank and supplying the pressurized CO2 to the second tank; an intermediate supply unit connecting the first tank and the second tank and supplying the first developer solution to the second tank; and a first fluid supply unit connecting the second tank and the chamber and supplying the second developer solution to the chamber. Effects of the invention

[0007] According to an embodiment of the present disclosure, after the development process, the first developer is replaced with a second developer at a low temperature in which the process fluid is dissolved. Since the photoresist pattern on the substrate is wetted with the second developer rather than the first developer while the substrate is being transferred from the development device to the supercritical drying device, the dissolution of the photoresist pattern can be minimized. Brief explanation of the drawing

[0008] FIG. 1a is a block diagram illustrating a semiconductor device manufacturing apparatus according to one embodiment. Figure 1b is a diagram regarding the phase change of carbon dioxide. FIG. 2 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 3 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 4 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 5 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 6 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 7 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 8 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 9 is a flowchart illustrating a substrate processing method according to one embodiment of the present disclosure. FIG. 10 is a flowchart illustrating a substrate processing method according to one embodiment of the present disclosure. FIGS. 11 to 13 are graphs for explaining the effects of a substrate processing method according to one embodiment of the present disclosure. Specific details for implementing the invention

[0009] FIG. 1a is a block diagram illustrating a semiconductor device manufacturing apparatus according to one embodiment. FIG. 1b is a diagram relating to the phase change of carbon dioxide.

[0010] Referring to FIG. 1a, a semiconductor device manufacturing apparatus (10) may include a substrate loader (WL), a substrate processing apparatus (WP), and a lithography apparatus (LP). The substrate loader (WL), the substrate processing apparatus (WP), and the lithography apparatus (LP) may be arranged in a line along a first direction (D1). The substrate processing apparatus (WP) may be placed between the substrate loader (WL) and the lithography apparatus (LP). However, the arrangement relationship of each apparatus shown in FIG. 1a is merely an example, and the present invention is not limited thereto.

[0011] A substrate loader (WL) may include a load port (110), an index robot (121), a transfer rail (122), and a buffer (130). The load port (110) may be positioned on one side of the index robot (121) and the transfer rail (122). Multiple load ports (110) may be arranged in a line along the transfer rail (122). The load port (110) may include a carrier (C) capable of holding a substrate. The carrier (C) may be transported from the outside and loaded into the load port (110), or unloaded from the load port (110) and transported to the outside.

[0012] The index robot (121) can move along the transfer rail (122). The transfer rail (122) may be arranged to extend along a second direction (D2) orthogonal to a first direction (D1). The transfer rail (122) may provide a path for the index robot (121) to move. The index robot (121) may transfer a substrate stored in a carrier (C) to a buffer (130). Alternatively, it may withdraw a substrate from the buffer (130) and store it in the carrier (C).

[0013] A buffer (130) may be positioned between a transfer rail (122) and a transfer robot (200). The buffer (130) may be positioned in alignment with the transfer robot (200) along a first direction (D1). The buffer (130) may provide a buffer space where a substrate being transported between an index robot (121) and a substrate processing unit (WP) may temporarily stay. Inside the buffer (130), one or more buffer slots may be provided for placing substrates. A substrate removed from a carrier (C) by the index robot (121) may be placed in the buffer slot, or a substrate removed from a substrate processing unit (WP) by the transfer robot (200) may be placed therein.

[0014] A substrate processing device (WP) may include a plurality of devices that perform a series of processes on substrates. The substrate processing device (WP) may include a transfer robot (200), a spin coater (300), a developing device (400), a baking device (500), and a supercritical drying device (600). Although not shown in the drawings, in one embodiment, the substrate processing device (WP) may further include an etching device.

[0015] The transfer robot (200) can withdraw substrates from the buffer (130) and transfer them to at least one of the spin coater (300), the developing device (400), the baking device (500), and the supercritical drying device (600). The transfer robot (200) can transfer a substrate on which a series of processes for exposure have been performed in the substrate processing device (WP) to the lithography device (LP). The transfer robot (200) can withdraw a substrate on which an exposure process has been performed from the lithography device (LP) and transfer it to the substrate processing device (WP), for example, the developing device (400) or the baking device (500). Although the transfer robot (200) is illustrated in the drawing as including a robot arm, the present invention is not limited thereto, and the transfer robot (200) may include other means capable of moving the substrate, such as a conveyor belt or a transfer rail.

[0016] A spin coater (300) can form a coating layer by coating a coating material onto a substrate. For example, the coating layer may include a photoresist layer. For example, the photoresist layer may be a chemical amplified resist. For example, in addition to the photoresist layer, the coating layer may include an organic planarization layer disposed below the photoresist layer, a reflective ring coating layer, an upper coating layer disposed on the photoresist layer, and any one of the combinations thereof.

[0017] A developing device (400) may perform a developing process on a substrate on which an exposure process has been completed by a lithography device (LP). The developing process may be a process for removing exposed or unexposed portions of a coating layer. The developing process may include spraying a developing solution onto a substrate and spinning the substrate to evenly coat the developing solution over the entire surface of the substrate. The exposed or unexposed portions of the coating layer may be removed by the developing process. For example, the developing solution may include an acetate-based material, an alkane-type organic solvent, and / or a ketone-type organic solvent.

[0018] The bake device (500) can perform a soft bake process, a post-exposure bake process, and a hard bake process. The soft bake process, also known as pre-bake, can be performed after forming a coating layer on a substrate in a spin coater. The soft bake process may be a process for removing organic solvent remaining in the coating layer (e.g., a photoresist layer) and strengthening the bond between the coating layer and the wafer. The soft bake process can be performed at a relatively low temperature.

[0019] The post-exposure baking process may be a process for flattening the curvature formed on the surface of the photoresist layer due to the unevenness of light intensity caused by standing waves formed during exposure. The post-exposure baking process can activate the photoactive compound (PAC) contained in the photoresist layer, and accordingly, the curvature formed on the photoresist layer can be reduced.

[0020] The hard bake process may be a process for enhancing durability against etching and increasing adhesion to the substrate by curing the photoresist after performing the exposure and development processes. Compared to the soft bake process, the hard bake process may be performed at a relatively high temperature.

[0021] A supercritical drying device (600) can dry a substrate. The supercritical drying device (600) can be configured to dry a substrate using a supercritical fluid. The supercritical drying device (600) can completely dry a wet substrate by utilizing the low viscosity and surface tension of the supercritical fluid. The supercritical fluid may refer to a process fluid in a supercritical state. Here, a supercritical state refers to a state in which a substance reaches a critical state, which is a state in which the liquid and gas cannot be distinguished, by exceeding the critical temperature and critical pressure. In a supercritical state, the substance has properties in which the molecular density is close to that of a liquid but the viscosity is close to that of a gas. The substance in a supercritical state has very high diffusivity, penetration power, and solubility, making it advantageous for chemical reactions. In addition, since the substance in a supercritical state has very low surface tension and does not apply interfacial tension to the microstructure, the drying yield is excellent during the drying process of a semiconductor device, and watermarks and / or collapse phenomena can be avoided. The process fluid in the supercritical state may include carbon dioxide (CO2), water (H2O), methane (CH4), ethane (C2H6), propane (C3H8), ethylene (C2H4), propylene (C2H2), methanol (C2H3OH), ethanol (C2H5OH), sulfur hexafluoride (SF6), acetone (C3H8O), or a combination thereof. Referring to FIG. 1b, for example, carbon dioxide is in a supercritical state when the temperature is 31.1°C or higher and the pressure is 7.38 MPa or higher.

[0022] In one embodiment, the supercritical drying device (600) may dry a substrate using a subcritical fluid. A subcritical fluid is a process fluid in a subcritical state, which may refer to a process fluid in a high temperature and high pressure state before the substance reaches a critical temperature and critical pressure (see FIG. 1b). For example, carbon dioxide may be in a subcritical state in a predetermined range where the temperature is less than 31.1°C and / or the pressure is less than 7.38 MPa, and the temperature is close to 31.1°C and the pressure is close to 7.38 MPa. The supercritical drying device (600) may dry a substrate by supplying at least one of the supercritical fluid and the subcritical fluid onto the substrate. In one embodiment, the supercritical drying device (600) may dry a substrate using not only the supercritical fluid and the subcritical fluid but also a gas in a gaseous state.

[0023] In one embodiment, the substrate processing device (WP) may further include a subcritical drying device that provides a subcritical fluid in addition to the supercritical drying device (600), or may include a subcritical drying device instead of the supercritical drying device (600).

[0024] When a substrate containing residual developer remaining after a development process is performed in a development device (400) is loaded into a chamber of a supercritical drying device (600), a drying process using a supercritical fluid and / or a subcritical fluid may be performed in the chamber. The drying process can dry the residual developer from the substrate without damaging the photoresist pattern by utilizing solvent displacement by a supercritical fluid and / or a subcritical fluid.

[0025] A lithography device (LP) can perform a lithography process using Extreme Ultraviolet (EUV) radiation as a light source. That is, the lithography device (LP) can use EUV radiation to expose a photoresist layer coated on a substrate to correspond to a predetermined pattern image. EUV radiation may be electromagnetic radiation having a wavelength within the range of 2 to 50 nm, for example, having a wavelength of 13 to 14 nm. Such radiation is also referred to as soft X-ray radiation. EUV radiation can be generated using plasma.

[0026] A lithography device (LP) for generating EUV radiation may include a laser that excites fuel to provide plasma and a source collector module for containing the plasma. For example, the plasma can be generated by irradiating a laser beam onto a fuel, such as particles of a suitable material (e.g., tin), or by directing a flow of a suitable gas or vapor, such as Xe gas or Li vapor. Such a radiation device is generally referred to as a laser-producing plasma (LPP). Alternatively, the source may include a discharge plasma source or a source based on synchrotron radiation provided by an electron storage ring.

[0027] In EUV lithography, wavelength selection can be limited by practical considerations regarding the availability of suitable radiation sources, optical components, and process materials. Current EUV lithography processes all operate using radiation wavelengths in the range of approximately 13 nm to 14 nm, and much research is being conducted before EUV lithography is used in mass production. EUV radiation with wavelengths shorter than 11 nm can be used, for example, within the range of 5 nm to 10 nm or 5 nm to 8 nm, particularly in the so-called '6.x' nm wavelength region (6.5 nm to 6.9 nm, e.g., 6.7 nm or 6.8 nm). These short-wavelength EUV lithography processes can provide better resolution (features smaller than the 11 nm node), greater depth of focus (DOF), and higher throughput compared to currently used wavelengths (e.g., 13.5 nm).

[0028] FIG. 2 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 3 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure.

[0029] Referring to FIG. 1a and FIG. 2, the developing device (400) may include a chamber (401), a first tank (410), a first fluid supply unit (420), a first source storage unit (430), a first source supply unit (440), a second tank (450), a second fluid supply unit (460), a second source storage unit (470), a second source supply unit (480), and a low-temperature device (455).

[0030] A development process using a developer solution can be performed within the chamber (401). A substrate on which the development process is to be performed may be provided in the chamber (401). The substrate provided in the chamber (401) may include a photoresist layer on which an exposure process has been performed. That is, a substrate on which an exposure process has been performed within a lithography device (LP) may be provided from the lithography device (LP) to a development device via a transfer robot (200).

[0031] The first tank (410) can store a first developer. The first developer may include an acetate-based material, an organic solvent of the alkane class, and / or an organic solvent of the ketone class. For example, the first developer may be n-butyl acetate. The first tank (410) can store the first developer at a first temperature. For example, the first temperature may be room temperature, i.e., approximately 15 to 25°C. However, the present invention is not limited thereto, and depending on the type of the first developer, the first temperature may be 15°C or lower, or 25°C or higher. The first tank (410) may be connected to the chamber (401) through the first fluid supply unit (420). The first developer stored in the first tank (410) may be supplied onto a substrate in the chamber (401) through the first fluid supply unit (420). The first fluid supply unit (420) may include a first supply line (421), a first supply valve (422), and a first supply filter (423). The first supply line (421) connects the first tank (410) and the chamber (401), and the first supply valve (422) and the first supply filter (423) may be provided in the first supply line (421). The first supply valve (422) can control the flow rate of the first developer by opening and closing the first supply line (421). The first supply filter (423) can remove impurities from the first developer passing through the first supply line (421). The first developer stored in the first tank (410) may be supplied to the chamber (401) at a first temperature through the first fluid supply unit (420). A development process may be performed using the first developer supplied to the chamber (401).

[0032] The first source storage unit (430) may be connected to the first tank (410) through the first source supply unit (440). The first source storage unit (430) may receive and store the first developer from the outside. The first source storage unit (430) may supply the first developer to the first tank (410) through the first source supply unit (440). The first source supply unit (440) may include a first source line (441) and a first source valve (542). The first source line (441) may connect the first source storage unit (430) and the first tank (410), and the first source valve (422) may be provided on the first source line (441). The first source valve (422) may control the flow rate of the first developer by opening and closing the first source line (441). In one embodiment, the first source storage unit (430) may be omitted, and the first developer may be supplied directly to the first tank (410) from the outside.

[0033] The first source supply unit (440) may further include a first branch line (443). The first source storage unit (430) may be connected to the second tank (450) through the first branch line (443). For example, the first branch line (443) may be branched from the first source line (440) and connected to the second tank (450). For example, the first branch line (443) may be connected to the first source valve (422). The first source valve (422) may be provided at the branch point where the first branch line (443) branches from the first source line (441). The first source valve (442) can open and close the first source line (441) and the first branch line (443), respectively. The first source valve (442) can control the flow rate of the first developer for each of the first source line (441) and the first branch line (443). The first developer stored in the first source storage unit (430) can be supplied to the second tank (450) through the first source line (441) and the first branch line (443). In one embodiment, if the first source storage unit (430) is omitted, the first developer may be supplied to the second tank (450) from the outside through the second source line (443).

[0034] The second source storage unit (470) may be connected to the second tank (450) through the second source supply unit (480). The second source storage unit (470) may store a process fluid. For example, the process fluid stored by the second source storage unit (470) may be CO2. The process fluid stored in the second source storage unit (470) may be supplied to the second tank (450) through the second source supply unit (480). The second source supply unit (480) may include a second source line (481), a second source valve (482), and a second source filter (483). The second source line (481) connects the second source storage unit (470) and the second tank (450), and the second source valve (482) and the second source filter (483) may be provided on the second source line (481). The second source valve (482) opens and closes the second source line (481) to control the flow rate of the process fluid supplied to the second tank (450), and the second source filter (483) can remove impurities from the process fluid. The internal pressure of the second source storage unit (470) can be maintained at a preset pressure. That is, the second source storage unit (470) can store the process fluid by pressurizing it to a set pressure. For example, the set pressure may be 1 to 10 bar, but the present invention is not limited thereto. In one embodiment, the second source storage unit (470) may be omitted, and gas from the outside may be supplied to the second tank (450) through the second source supply unit (480).

[0035] In one embodiment, the second tank (450) may receive a first developer from the first source storage unit (430), and the second tank (450) may receive CO2 from the second source storage unit (470). For example, the second tank (450) may receive pressurized CO- from the second source storage unit (470). 2- It can be provided. As pressurized CO2 is provided to the second tank (450), the pressure inside the second tank (450) can be increased. CO 2-By pressurizing the first developer, CO2 can be dissolved in the first developer to produce a second developer. 2- The first developer in which the solution is dissolved can be referred to as the second developer.

[0036] The second developer may be stored at a second temperature within the second tank (450). The second temperature may be lower than the first temperature, which is the temperature of the first developer within the first tank (410). For example, the second developer may be stored at approximately -20 to 20°C within the second tank (450). The internal pressure of the second tank (450) may be maintained at a preset pressure. For example, the internal pressure of the second tank (450) may be maintained at approximately 1 to 10 bar. Preferably, the internal pressure of the second tank (450) may be maintained at approximately 3 to 10 bar. As the temperature of the second developer and the internal pressure of the second tank (450) are maintained as described above, the solubility of CO2 in the first developer or the second developer may increase as CO2 is supplied into the second tank (450).

[0037] A first low-temperature device (455) may be connected to a second tank (450). The first low-temperature device (455) may be part of the second tank (450). For example, the first low-temperature device (455) may be a circulating heat exchanger or a water bath heat exchanger including piping passing through the second tank (450). Through the first low-temperature device (455), the temperature inside the second tank (450) may be maintained at a preset temperature. For example, the first low-temperature device (455) may maintain the temperature of the second developer inside the second tank (450) at a second temperature.

[0038] A second tank (450) may be connected to a chamber (401) through a second fluid supply unit (460). A second developer in the second tank (450) may be supplied to the chamber (401) through the second fluid supply unit (460). The second developer may be supplied to the chamber (401) at a second temperature. The second fluid supply unit (460) may include a second supply line (461), a second supply valve (462), and a second supply filter (463). The second supply line (461) connects the second tank (450) and the chamber (401), and the second supply valve (462) may open and close the second supply line (461) to regulate the flow rate of the second developer. The second supply filter (463) may remove impurities in the second developer passing through the second supply line (461).

[0039] The second developer in the second tank (450) can be provided onto the substrate in the chamber (401) after the first developer in the first tank (410) is provided onto the substrate in the chamber (401) and the development process is performed, that is, after the development process is completed. The second developer can be provided onto the substrate so that the first developer at the first temperature on the substrate is replaced with the second developer at the second temperature. With the substrate and the photoresist pattern on the substrate wetted with the second developer at the second temperature, the substrate can be withdrawn from the chamber (401) by the transfer robot (200) and transferred to the supercritical drying device (600). In the supercritical drying device (600), the second developer can be dried using a supercritical fluid and / or a subcritical fluid.

[0040] Referring to FIG. 3, the developing device (400) may further include a second low-temperature device (457) connected to a first fluid supply unit (420) and / or a second fluid supply unit (460). The second low-temperature device (457) may prevent the temperature of the first developer passing through the first fluid supply unit (420) from rising and / or prevent the temperature of the second developer passing through the second fluid supply unit (460) from rising. For example, the second low-temperature device (457) may maintain the first developer passing through the first fluid supply unit (420) at a first temperature and / or maintain the second developer passing through the second fluid supply unit (460) at a second temperature. Accordingly, the first developer can be supplied to the chamber (401) at a first temperature through the first fluid supply unit (420), and the second developer can be supplied to the chamber (401) at a second temperature through the second fluid supply unit (460).

[0041] FIG. 4 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 5 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. In this specification, the same reference numerals denote the same configurations, and below, descriptions of contents that overlap with those described in FIG. 2 and FIG. 3 are omitted.

[0042] Referring to FIG. 4, the developing device (400) may include a chamber (401), a first tank (410), a first source storage unit (430), a first source supply unit (440), a first fluid supply unit (420a), an intermediate supply unit (490), a second tank (450), a second source storage unit (470), a second source supply unit (480), a second fluid supply unit (460), a first low-temperature device (456), and a second low-temperature device (455).

[0043] The first source storage unit (430) can be connected to the chamber (401) through the first fluid supply unit (420a). The first developer stored in the first source storage unit (430) can be supplied to the chamber (401) through the first fluid supply unit (420a). Within the first source storage unit (430), the first developer is stored at a first temperature, and the first developer can be supplied to the chamber (401) at the first temperature. For example, the first temperature may be 15 to 25°C. However, the present invention is not limited thereto, and the first temperature may vary depending on the first developer. A development process can be performed within the chamber (401) by the first developer supplied through the first fluid supply unit (420a).

[0044] A first low-temperature device (456) may be connected to a first tank (410). The first low-temperature device (456) may be part of the first tank (410). Through the first low-temperature device (456), the temperature inside the first tank (410) may be maintained at a preset temperature. For example, the first low-temperature device (456) may maintain the temperature of the first developer inside the second tank (450) at a second temperature lower than the first temperature. For example, the second temperature may be -20 to 20°C.

[0045] The first tank (410) and the second tank (450) can be connected through an intermediate supply unit (490). A first developer stored in the first tank (410) can be supplied to the second tank (450) through the intermediate supply unit (490). The first developer can be supplied to the second tank (450) at a second temperature. By lowering the temperature of the first developer in the first tank (410) beforehand and then supplying the first developer in a lowered state to the second tank (450), CO2 can be dissolved more quickly in the first developer within the second tank (450). The intermediate supply unit (490) may be equipped with an intermediate source line (491) connecting the first tank (410) and the second tank (450), and a pump (492) and a filter (493) provided in the intermediate source line (491). The pump (492) can pressurize the first developer flowing through the intermediate source line (491) and supply it to the second tank (450). That is, the pump (492) can increase the flow rate of the first developer passing through the intermediate source line (491) to increase the internal pressure of the second tank (450). The filter (492) can remove impurities in the first developer passing through the intermediate source line (491).

[0046] A second low-temperature device (455) may be connected to a second tank (450). The second low-temperature device (455) may be part of the second tank (450). Through the second low-temperature device (455), the temperature inside the second tank (450) may be maintained at a preset temperature. For example, the second low-temperature device (455) may maintain the second developer inside the second tank (450) at a second temperature. In one embodiment, the second developer may be maintained at a third temperature lower than the second temperature through the second low-temperature device (455).

[0047] In one embodiment, unlike the drawing, the first fluid supply unit (420a) may connect the first tank (410) and the chamber (401). Accordingly, the first developer in the first tank (410) may be supplied to the chamber (401).

[0048] Referring to FIG. 5, the developing device (400) may further include a third low-temperature device (457a). The third low-temperature device (457a) may be connected to the first fluid supply unit (420a) and / or the second fluid supply unit (460). The third low-temperature device (457a) may prevent the temperature of the first developer passing through the first fluid supply unit (420a) from rising, and / or prevent the temperature of the second developer passing through the second fluid supply unit (460) from rising. For example, the third low-temperature device (457a) may maintain the second developer passing through the first fluid supply unit (420a) at a first temperature, and / or maintain the second developer passing through the second fluid supply unit (460) at a second temperature or a third temperature lower than the first temperature. Accordingly, the first developer is supplied to the chamber (401) at a first temperature, and the second developer can be supplied to the chamber (401) at a second temperature or a third temperature.

[0049] FIG. 6 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure. FIG. 7 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure.

[0050] Referring to FIG. 6, the developing device (400) may include a chamber (401), a tank (450), a first source storage unit (430), a first fluid supply unit (420a), a first source supply unit (440a), a second fluid supply unit (460), a second source storage unit (470), a second source supply unit (480), and a first low-temperature device (455).

[0051] The chamber (401) and the first source storage unit (430) can be connected through the first fluid supply unit (420a). The first developer stored in the first source storage unit (430) can be supplied to the chamber (401) through the first fluid supply unit (420a). The first developer can be supplied to the chamber (401) at a first temperature. A development process can be performed within the chamber (401) by the first developer supplied at the first temperature.

[0052] The tank (450) and the first source storage unit (430) may be connected through the first source supply unit (440a). The first source supply unit (440a) may include a first source line (441a) connecting the first source storage unit (430) and the tank (450), and a first source valve (442a) provided in the first source line (441a). The first developer stored in the first source storage unit (430) may be supplied to the tank (450) through the first source supply unit (440a).

[0053] The tank (450) and the second source storage unit (470) can be connected through the second source supply unit (480). The process fluid stored in the second source storage unit (470) can be supplied to the tank (450) through the second source supply unit (480). For example, the process fluid stored in the second source storage unit (470) may be CO2.

[0054] In the tank (450), a process fluid, namely CO2, can be pressurized into the first developer to produce a second developer in which CO2 is dissolved in the first developer. In the tank (450), the second developer can be stored at a second temperature. The second developer in the tank (450) can be supplied to the chamber (401) at a second temperature lower than the first temperature through the second fluid supply unit (460). The second developer can be supplied into the chamber (401) after the development process using the first developer is completed.

[0055] Referring to FIG. 7, the developing device (400) may further include a second low-temperature device (457b) connected to a first fluid supply unit (420a) and / or a second fluid supply unit (460). The second low-temperature device (457b) may prevent the temperature of the first developer passing through the first fluid supply unit (420a) from rising and / or prevent the temperature of the second developer passing through the second fluid supply unit (460) from rising. For example, the first developer passing through the first fluid supply unit (420a) may be maintained at a first temperature and / or the second developer passing through the second fluid supply unit (460) may be maintained at a second temperature. Accordingly, the first developer can be supplied to the chamber (401) at a first temperature through the first fluid supply unit (420a), and the second developer can be supplied to the chamber (401) at a second temperature through the second fluid supply unit (460).

[0056] FIG. 8 is a schematic diagram illustrating a developing apparatus according to one embodiment of the present disclosure.

[0057] Referring to FIG. 8, the developing device (400) may include a chamber (401), a first source storage unit (430), a first source supply unit (420b), a second source storage unit (470), a second source supply unit (460a), and a low-temperature device (457c).

[0058] The chamber (401) and the first source storage unit (430) may be connected via the first source supply unit (420b). The first source storage unit (430) may store a first developer. The first source storage unit (430) may store the first developer at a first temperature. For example, the first temperature may be approximately 15 to 25°C, but is not limited thereto and may vary depending on the type of the first developer. The first source supply unit (420b) may include a first source line (421b), a first source valve (422b), and a first source filter (423b). The first source line (421b) connects the chamber (401) and the first source storage unit (430), and the first source valve (422b) and the first source filter (423b) may be provided on the first source line (421b). A first developer at a first temperature can be supplied onto a substrate in the chamber (401) through the first source supply unit (420b) to perform a developing process.

[0059] The chamber (401) and the second source storage unit (470) may be connected via the second source supply unit (460a). The second source storage unit (470) may store a process fluid. The process fluid in the second source storage unit (470) may be, for example, at a first temperature. However, the present invention is not limited thereto, and it may be -20 to 20°C. For example, the process fluid may be CO2. The second source supply unit (460a) may include a second source line (461a), a second source valve (462a), and a second source filter (463a). The process fluid stored in the second source storage unit (470) may be supplied to the chamber (401) via the second source supply unit (460a). The process fluid may be supplied to the chamber (401) after the development process is completed.

[0060] A low-temperature device (457c) may be connected to a second source supply unit (460a). A low-temperature device (457c) may be connected to a second source line (461a). The low-temperature device (457c) may lower the temperature of the process fluid supplied to the chamber (401) through the second source supply unit (460a) from a first temperature to a second temperature lower than the first temperature. For example, the second temperature may be -20 to 20°C. Accordingly, the process fluid may be supplied to the chamber (401) at the second temperature. Alternatively, the low-temperature device (457c) may prevent the temperature of the process fluid from rising while it passes through the second source supply unit (460a) (if it is already at a low temperature). The process fluid at the second temperature may be supplied onto a substrate inside the chamber (401) and dissolved in the first developer. After the development process is completed, the remaining first developer may remain on the substrate, and a process fluid at a second temperature may be dissolved in the remaining first developer. Accordingly, the remaining first developer may be replaced with a second developer in which the process fluid is dissolved.

[0061] FIG. 9 is a flowchart illustrating a substrate processing method according to one embodiment of the present disclosure.

[0062] Referring to FIGS. 1a through 9, when a substrate is provided to the chamber (401) of a developing device (400), a developing process can be performed (S10). The substrate may have a photoresist layer formed in a spin coater (300) and an exposure process completed in a lithography device (LP). A first developing solution may be supplied onto the substrate through a first fluid supply unit (420, 420a, see FIGS. 2 through 7) or a first source supply unit (420b, see FIG. 8) to perform the developing process. The temperature of the first developing solution supplied onto the substrate may be a first temperature. For example, the first temperature may be room temperature, approximately 15 to 25°C, but may be higher or lower than this depending on the type of the first developing solution. The first developing solution may include an acetate-based material, an alcohol-based organic solvent, an alkane-based organic solvent, or a ketone-based organic solvent. For example, the first developer may contain n-butyl acetate.

[0063] After the development process is completed, that is, after the supply of the first developer is completed, a process fluid at a second temperature lower than the first temperature can be supplied onto the substrate to replace the remaining first developer with the second developer (S20). For example, the second temperature may be -20 to 20°C. After the development process is completed, there may be a remaining first developer that has dissolved the photoresist layer on the substrate. By supplying the process fluid onto the substrate through the second fluid supply unit (460, see FIGS. 2 to 7) or the second source supply unit (460a, see FIG. 8) to mix the process fluid with the remaining first developer, the remaining first developer can be replaced with a second developer in which the process fluid and the remaining first developer are mixed. For example, the provided process fluid may be CO2 or the second developer. The second developer may be the first developer in which CO2 is dissolved. The temperature of the second developer replaced on the substrate may be the second temperature.

[0064] Afterward, the substrate, which has been wetted with the second developer, can be transferred to a supercritical drying device (600) (S30). A transfer robot (200) can withdraw the substrate from the chamber (401) and return it to the supercritical drying device (600). Conventionally, there was a problem in that the photoresist layer (or photoresist pattern) was dissolved by the remaining first developer while the substrate was being transferred to the supercritical drying device (600). Since the second developer has a second temperature, which is lower than the first developer at the first temperature, and contains dissolved CO2, the dissolving power for the photoresist layer (or photoresist pattern) may be lower than that of the remaining first developer. Accordingly, the present invention can prevent damage to the photoresist layer (or photoresist pattern) caused by the residual first developer while the substrate is being transferred from the developing device (400) to the supercritical drying device (600) by replacing the residual first developer with the second developer after the development process is completed.

[0065] A supercritical drying device (600) can supply a supercritical fluid and / or a subcritical fluid onto a substrate to dry the second developer (S40). In one embodiment, after the drying process, the substrate can be transferred from the supercritical drying device (600) to a bake device (500), and a hard bake process can be performed within the bake device (500).

[0066] FIG. 10 is a flowchart illustrating a substrate processing method according to one embodiment of the present disclosure.

[0067] Referring to FIG. 10, a patterning process for forming a pattern on a substrate can be performed in an etching device (S11). For example, an inorganic pattern can be formed by etching a substrate or an inorganic layer on the substrate through an etching process using a hard mask pattern as an etching mask. The etching process can be performed using an etching etchant. For example, the etching etchant can be applied to the substrate at a first temperature. For example, the first temperature may be 100°C to 300°C, but is not limited thereto.

[0068] After the patterning process, a substitution solution may be supplied onto the substrate. The substitution solution may be supplied to replace the etching etchant with the substitution solution. In one embodiment, after the patterning process, the substrate may be cleaned with a cleaning solution such as deionized water, and then the substitution solution may be supplied. For example, the substitution solution may include a solution of alcohols in which CO2 is dissolved. For example, the substitution solution may include isopropyl alcohol (IPA) in which CO2 is dissolved. The substitution solution may be provided at a second temperature lower than the first temperature. For example, the second temperature may be -20°C to 20°C, but is not limited thereto. The substitution solution may be generated through a device identical or similar to the tank and low-temperature device that form the second developer described in FIGS. 2 to 8. For example, isopropyl alcohol and pressurized CO2 may be supplied to a tank with high pressure and low temperature inside to dissolve CO2 in the isopropyl alcohol and generate the substitution solution. Subsequently, the replacement solution can be supplied from the tank to the substrate inside the chamber to wet the substrate with the replacement solution.

[0069] Afterwards, the substrate is transferred from the etching device to the supercritical drying device (S31), and the replacement solution can be dried in the supercritical drying device (S41).

[0070] FIGS. 11 to 13 are graphs for explaining the effects of a substrate processing method according to one embodiment of the present disclosure.

[0071] Figure 11 shows a graph comparing the thickness of a photoresist pattern when a substrate is transported while wetted with a developer (e.g., n-butyl acetate, nBA) and when a substrate is transported while wetted with a developer containing dissolved CO2. Referring to Figure 11, during substrate transport within 25 seconds, CO 2- It can be observed that the thickness of the photoresist pattern is thicker when the substrate is transported while wetted with a developer solution in which CO2 is dissolved. In other words, it can be confirmed that the developer solution in which CO2 is dissolved has low solubility for the photoresist pattern.

[0072] Figure 12 is a graph showing the critical dimension (CD) of a photoresist pattern according to the solubility of CO2 in a developer (e.g., n-butyl acetate, nBA) that wets the substrate. Referring to Figure 12, it can be seen that the higher the solubility of CO2 in the developer, the larger the CD of the photoresist pattern.

[0073] Figure 13 is a graph showing the solubility of the developer solution for photoresist according to the temperature of the developer solution. Referring to Figure 13, it can be seen that the lower the temperature of the developer solution, the lower the solubility of the developer solution for photoresist.

[0074] Although embodiments according to the technical concept of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. The embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0080] 10: Semiconductor device manufacturing device WL: Substrate Loader WP: Substrate Processing Unit 110: Load Port 121: Index Robot 122: Transfer rail 130: Buffer 200: Transfer robot 300: Spin coater 400: Developing unit 500: Bake unit 600: Supercritical drying unit LP: Lithography unit 410: 1st Tank 420: 1st Fluid Supply Unit 430: First source storage unit 440: First source supply unit 450: 2nd Tank 460: 2nd Fluid Supply Unit 470: Second source storage unit 480: Second source supply unit 455: Low-temperature device 401: Chamber

Claims

Claim 1 A method for processing a substrate, comprising: supplying a first developer at a first temperature onto a substrate of a developing device to perform a developing process; supplying a second developer at a second temperature lower than the first temperature onto the substrate to replace the remaining first developer with the second developer after the developing process, wherein the second developer is a solution in which pressurized CO2 is dissolved in the first developer; transferring the substrate from the developing device to a supercritical drying device; and supplying at least one of a supercritical fluid and a subcritical fluid onto the substrate to dry the second developer. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 A substrate processing method according to claim 1, further comprising: providing the first developer solution to a tank including the developing device, and pressurizing CO2 into the first developer solution in the tank to form the second developer solution. Claim 6 A substrate processing method according to claim 5, wherein the tank further comprises a low-temperature device, and the low-temperature device further comprises maintaining the temperature of the second developer in the tank at the second temperature. Claim 7 A substrate processing method according to claim 1, wherein the second temperature is approximately -20℃ to 20℃. Claim 8 A substrate treatment method according to claim 1, wherein the first developer comprises at least one of an acetate-based material, an alkane-based organic solvent, and a ketone-based organic solvent. Claim 9 A semiconductor device manufacturing apparatus comprising: a developing device for performing a developing process on an exposed photoresist layer on a substrate; a supercritical drying device for drying the substrate using at least one of a supercritical fluid and a subcritical fluid; and a transfer robot for transferring the substrate from the developing device to the supercritical drying device, wherein the developing device comprises: a chamber for receiving the substrate; a first tank for storing at least a portion of a first developer provided from a first source storage unit at a first temperature; a second tank for storing a second developer, in which pressurized CO2 provided from a second source storage unit is dissolved in a portion of the first developer provided from the first source storage unit, at a second temperature lower than the first temperature; a first fluid supply unit connecting the first tank and the chamber; and a second fluid supply unit connecting the second tank and the chamber. Claim 10 A semiconductor device manufacturing apparatus according to claim 9, further comprising a first low-temperature device connected to the second tank.

Images