Apparatus for treating substrate

Abstract

A substrate processing device according to an embodiment of the present invention comprises a process chamber having an internal space, an upper electrode portion disposed at the upper end of the internal space of the process chamber, a lower electrode portion disposed at the internal space of the process chamber so as to be positioned opposite to the upper electrode portion, and a gas supply portion that supplies cooling gas to the bottom surface of a substrate seated on the upper end of the lower electrode portion. The gas supply portion comprises a main body disposed with at least a portion embedded in the lower electrode portion, a gas source disposed outside the process chamber and providing cooling gas, and a gas filter connected to the gas source and installed in the main body. The gas filter has a gas flow path having a straight shape in the upper and lower directions through which gas flows. The gas filter has a first region made of a first material and a second region made of a second material having a dielectric constant different from that of the first material. The first region and the second region may be arranged so that gas flowing along the gas flow path flows upward while colliding with the wall of the gas flow path.

Description

Technology Field

[0001] The present invention relates to a substrate processing device. Background Technology

[0003] Generally, plasma processing devices require the substrate to be maintained at a constant temperature to ensure process reproducibility; for this reason, a supply pipe for cooling gas is installed at the lower electrode. That is, in conventional plasma processing devices, the substrate is adsorbed onto the lower electrode using an electrostatic chuck, and cooling gas (e.g., helium gas) is sprayed from a gas filter toward the bottom surface of the substrate to ensure uniform temperature distribution.

[0004] Furthermore, when plasma is generated on the upper surface of the substrate in the plasma processing device, a voltage identical to the voltage generated between the lower electrode and the plasma is created between the lower electrode and the component by high-frequency power. At this time, electrons in the cooling gas are accelerated within the gas filter to cause a discharge.

[0005] However, when such a discharge occurs, the etching rate is reduced and the etching treatment of the substrate is insufficient because the predetermined power energy cannot be secured.

[0006] Furthermore, there is a problem where the manufacturing yield is low because the process cannot proceed due to the occurrence of discharge, which requires stopping the equipment and replacing the carbonized parts. The problem to be solved

[0008] One of the technical problems that the technical concept of the present invention aims to solve is to provide a substrate processing device capable of preventing the discharge of gas flowing through a gas supply path. means of solving the problem

[0010] A substrate processing device according to an exemplary embodiment comprises a process chamber having an internal space, an upper electrode portion disposed at the upper end of the internal space of the process chamber, a lower electrode portion disposed at the internal space of the process chamber so as to be positioned opposite to the upper electrode portion, and a gas supply portion that supplies cooling gas to the bottom surface of a substrate seated on the upper end of the lower electrode portion. The gas supply portion comprises a gas source disposed outside the process chamber and providing cooling gas, and a gas filter connected to the gas source and guiding cooling gas into the interior of the process chamber. The gas filter comprises a gas flow path through which gas flows. The gas filter comprises a first region made of a first material and a second region made of a second material having a dielectric constant different from that of the first material. The first region and the second region may be arranged so that gas flowing along the gas flow path flows upward while colliding with the wall of the gas flow path.

[0011] A substrate processing device according to an exemplary embodiment comprises a process chamber having an internal space, an upper electrode portion disposed at the upper end of the internal space of the process chamber, a lower electrode portion disposed at the internal space of the process chamber so as to be positioned opposite to the upper electrode portion, and a gas supply portion that supplies cooling gas to the bottom surface of a substrate seated on the upper end of the lower electrode portion. The gas supply portion comprises a gas source disposed outside the process chamber and providing cooling gas, and a gas filter connected to the gas source and guiding cooling gas into the interior of the process chamber. The gas filter comprises a gas flow path through which gas flows, and the gas filter may be provided with an insertion layer disposed at an angle with respect to the gas flow path. Effects of the invention

[0013] A substrate processing device capable of preventing the discharge of gas flowing through the gas supply path can be provided.

[0014] The various and beneficial advantages and effects of the present invention are not limited to those described above and will be more easily understood in the process of explaining specific embodiments of the present invention. Brief explanation of the drawing

[0016] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to an exemplary embodiment. FIG. 2 is a perspective view showing a gas filter according to an embodiment of the present invention. FIG. 3 is a front view showing a gas filter according to an embodiment of the present invention. FIG. 4 is a cross-sectional view showing a gas filter according to an embodiment of the present invention. FIG. 5 is an explanatory diagram for explaining the equipotential lines and the direction of gas flow of a gas filter according to an embodiment of the present invention. FIG. 6 is a perspective view showing a gas filter according to an embodiment of the present invention. FIG. 7 is a front view showing a gas filter according to an embodiment of the present invention. FIG. 8 is a cross-sectional view showing a gas filter according to an embodiment of the present invention. FIG. 9 is a perspective view showing a gas filter according to an embodiment of the present invention. FIG. 10 is a front view showing a gas filter according to an embodiment of the present invention. FIG. 11 is a cross-sectional view showing a gas filter according to an embodiment of the present invention. FIG. 12 is a perspective view showing a gas filter according to an embodiment of the present invention. FIG. 13 is a front view showing a gas filter according to an embodiment of the present invention. FIG. 14 is a cross-sectional view showing a gas filter according to an embodiment of the present invention. FIG. 15 is a perspective view showing a gas filter according to an embodiment of the present invention. FIG. 16 is a front view showing a gas filter according to an embodiment of the present invention. FIG. 17 is a cross-sectional view showing a gas filter according to an embodiment of the present invention. Specific details for implementing the invention

[0017] Preferred embodiments of the present invention will be described below with reference to the attached drawings.

[0019] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to an exemplary embodiment.

[0021] Referring to FIG. 1, the substrate processing device (100) includes, as an example, a vacuum chamber (110), an upper electrode part (120), a lower electrode part (130), and a gas supply part (140).

[0023] The vacuum chamber (110) provides an internal space for performing a processing process (e.g., an etching process) on a loaded substrate (W). Meanwhile, a gate valve (114) for opening and closing an entry / exit port (112) of the substrate (W) may be installed on the outer wall (111) of the vacuum chamber (110). A load lock chamber (160) in which a wafer transfer arm (162) is disposed may be connected to the gate valve (114).

[0024] Here, when looking at the operation of introducing a substrate (W) into the vacuum chamber (110), the pressure of the load lock chamber (160) is reduced to a level similar to the pressure of the vacuum chamber (110), and then the substrate (W) is introduced from the load lock chamber (160) into the vacuum chamber (110) using the wafer transfer arm (162). Afterward, the wafer transfer arm (162) is moved from the vacuum chamber (110) to the load lock chamber (160), and then the gate valve (114) is closed.

[0025] Meanwhile, the vacuum chamber (110) is connected to a specific pressure reduction device (108) through an exhaust pipe (116) disposed in a specific area. Accordingly, the vacuum chamber (110) can provide the low internal pressure required for excellent etching characteristics.

[0027] And, an upper electrode unit (120) that serves as a processing gas supply unit is disposed at the top of the vacuum chamber (110). And, the upper electrode unit (120) is equipped with a shower head (124) having a plurality of spray holes (124a). The shower head (124) is configured to uniformly supply processing gas supplied from a processing gas filter (not shown) to the upper space of the substrate (W) of the vacuum chamber (110).

[0029] A lower electrode portion (130) is positioned at the bottom of the vacuum chamber (110) so as to be positioned opposite to the upper electrode portion (120). An electrostatic chuck (132) for fixing a substrate (W) may be positioned at the top of the lower electrode portion (130). The electrostatic chuck (132) may be made of a circular plate composed of an insulating material such as ceramic. The electrostatic chuck (132) includes two polyimide-based films and a conductive thin film disposed between them. The conductive thin film is connected to a high-voltage DC power source (not shown) placed outside the vacuum chamber (110). When a predetermined voltage is applied to the conductive thin film from the high-voltage DC power source, charges are generated on the surface of the polyimide-based film, and a Coulomb force is generated to fix the substrate (W) to the upper surface of the electrostatic chuck (132). Additionally, a focus ring (133) on which a substrate (W) is placed may be provided on the upper part of the electrostatic chuck (132). As an example, the focus ring (133) may have a circular ring shape. The focus ring (133) may be made of a conductive material such as metal. Meanwhile, the focus ring (133) serves to improve the uniformity of the plasma sheath formed on the substrate (W) by moving active ions or radicals of the source plasma to the periphery of the wafer. Accordingly, the source plasma formed in the internal space of the vacuum chamber (110) can be formed intensively in the upper region of the substrate (W). Meanwhile, the focus ring (133) may be made of any one of silicon (Si), silicon carbide (SiC), silicon oxide (SiO2), or aluminum oxide (Al2O3). Additionally, an insulating member (136) is disposed at the lower end of the lower electrode portion (130), and a conductive member (138) forming the outer wall of the vacuum chamber (110) may be disposed at the lower end of the insulating member (136). Meanwhile, the conductive member (138) serves as a ground electrode and may be disposed to have a lower potential than the main body (142), which will be described later, as an example.

[0031] The gas supply unit (140) may be configured to include a main body (142), a gas supply source (144), and a gas filter (150). The main body (142) may be installed such that at least a portion of it is embedded in an insulating member (136). Additionally, a gas filter (150) may be installed inside the main body (142). To this end, the main body (142) may be provided with an installation hole (142a) in which the gas filter (150) is installed.

[0033] A gas source (144) may be placed outside the vacuum chamber (110) and connected to a gas filter (150). As an example, the gas received in the gas source (144) and supplied through the gas filter (150) may be a cooling gas (such as helium).

[0035] The gas filter (150) is installed on the main body (142) and can perform the function of supplying gas to the bottom surface of the substrate (W). A detailed description of the gas filter (150) will be provided later.

[0037] Meanwhile, in this embodiment, the case in which the main body (142) is provided in the gas supply unit (140) is described as an example, but it is not limited thereto and the main body (142) may be omitted. In other words, the gas filter (150) of the gas supply unit (140) is connected to the gas supply source (144), and only the gas filter (150) may be installed in the vacuum chamber (110).

[0039] FIG. 2 is a perspective view showing a gas filter according to an embodiment of the present invention, FIG. 3 is a front view showing a gas filter according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view showing a gas filter according to an embodiment of the present invention.

[0041] Referring to FIGS. 2 to 4, the gas filter (150) may be provided with a gas flow path (152) through which gas flows. Multiple gas flow paths (152) may be provided, and the gas flow paths (152) may be arranged to have a straight shape in the upward and downward directions. As an example, the gas filter (150) may be made of two materials with different dielectric constants. Additionally, the gas filter (150) may have two materials with different dielectric constants arranged alternately, and the materials with different dielectric constants may be arranged at an angle with respect to the gas flow path (152). For example, the gas filter (150) may have a first region (154a) made of a first material and a second region (154b) made of a second material with a dielectric constant different from that of the first material. Also, the first region (154) and the second region (154b) may be arranged alternately. In other words, the first region (154a) and the second region (154b) may have a bent line shape in which the center of the gas filter (150) is positioned at the bottom and the edge is positioned at the top. Also, the first region (154a) and the second region (154b) may have the same thickness. However, this is not limited thereto, and the first region (154a) and the second region (154b) may have different thicknesses.

[0043] Accordingly, as illustrated in FIG. 5, the equipotential line (S1) of the first region (154a) and the equipotential line (S2) of the second region (154b) are arranged at an angle with respect to the gas flow path (152), and the equipotential line (S1) of the first region (154a) and the equipotential line (S2) of the second region (154b) can be arranged to have different angles of inclination. Accordingly, electrons in the gas flowing along the gas flow path (152) can move upward along the gas flow path (152) while colliding with the wall of the gas flow path (152) as in the electric field direction (F1) illustrated in FIG. 5. In other words, as illustrated in FIG. 5, a gas filter (150) in which the electric field direction is arranged obliquely can suppress discharge by causing electrons to collide with the wall of the gas flow path (152) along the oblique electric field direction, thereby losing energy. Meanwhile, as the diameter of the gas flow path (152) becomes smaller, electrons are more likely to collide with the wall of the gas flow path (152), so the smaller the diameter, the more advantageous it may be for suppressing discharge.

[0045] Meanwhile, in this embodiment, the gas filter (150) is described as having a first region (154a) made of a first material and a second region (154b) made of a second material with a dielectric constant different from that of the first material, but is not limited thereto. That is, the gas filter (150) may be made of three or more materials with different dielectric constants. In this case, the three regions may be arranged alternately in sequence.

[0047] FIG. 6 is a perspective view showing a gas filter according to an embodiment of the present invention, FIG. 7 is a front view showing a gas filter according to an embodiment of the present invention, and FIG. 8 is a cross-sectional view showing a gas filter according to an embodiment of the present invention.

[0049] Referring to FIGS. 6 to 8, the gas filter (250) may be provided with a gas flow path (252) through which gas flows. Multiple gas flow paths (252) may be provided, and the gas flow paths (252) may be arranged to have a straight shape in the upward and downward directions. As an example, the gas filter (250) may be made of two materials with different dielectric constants. Additionally, the gas filter (250) may have two materials with different dielectric constants arranged alternately, and the materials with different dielectric constants may be arranged at an angle with respect to the gas flow path (252). For example, the gas filter (250) may have a first region (254a) made of a first material and a second region (254b) made of a second material with a dielectric constant different from that of the first region (254a) made of the first material. Additionally, the first region (254a) and the second region (254b) may be arranged alternately. In other words, the first region (254a) and the second region (254b) may be arranged at an angle in one direction, and the angle of inclination of the first region (254a) and the second region (254b) may be the same. Also, the first region (254a) and the second region (254b) may have the same thickness. However, this is not limited thereto, and the first region (254a) and the second region (254b) may have different thicknesses.

[0050] Meanwhile, in this embodiment, the gas filter (250) is described as having a first region (254a) made of a first material and a second region (254b) made of a second material with a dielectric constant different from that of the first material, but is not limited thereto. That is, the gas filter (250) may be made of three or more materials with different dielectric constants. In such a case, the three regions may be arranged alternately in sequence.

[0053] FIG. 9 is a perspective view showing a gas filter according to an embodiment of the present invention, FIG. 10 is a front view showing a gas filter according to an embodiment of the present invention, and FIG. 11 is a cross-sectional view showing a gas filter according to an embodiment of the present invention.

[0055] Referring to FIGS. 9 to 11, the gas filter (350) may be provided with a gas flow path (352) through which gas flows. Multiple gas flow paths (352) may be provided, and the gas flow paths (352) may be arranged vertically to have a straight shape in the up and down directions. As an example, the gas filter (350) may be made of two materials with different dielectric constants. Additionally, the gas filter (350) may have two materials with different dielectric constants arranged alternately, and the materials with different dielectric constants may be arranged at an angle with respect to the gas flow path (352). For example, the gas filter (350) may be provided with a first region (354a) made of a first material and a second region (354b) made of a second material with a dielectric constant different from that of the first region (354a) made of the first material. Also, the first region (354a) and the second region (354b) may be arranged alternately. Meanwhile, each layer of the first region (354a), which consists of multiple layers, may have a different angle of inclination and a different thickness, and furthermore, each layer of the second region (354b), which consists of multiple layers, may also have a different angle of inclination and a different thickness.

[0056] Meanwhile, in this embodiment, the gas filter (350) is described as having a first region (354a) made of a first material and a second region (354b) made of a second material with a dielectric constant different from that of the first material, but is not limited thereto. That is, the gas filter (350) may be made of three or more materials with different dielectric constants. In such a case, the three regions may be arranged alternately in sequence.

[0058] FIG. 12 is a perspective view showing a gas filter according to an embodiment of the present invention, FIG. 13 is a front view showing a gas filter according to an embodiment of the present invention, and FIG. 14 is a cross-sectional view showing a gas filter according to an embodiment of the present invention.

[0060] Referring to FIGS. 12 to 14, the gas filter (450) may be provided with a gas flow path (452) through which gas flows. Multiple gas flow paths (452) may be provided, and the gas flow paths (452) may be arranged to have a straight shape in the upward and downward directions. As an example, the gas filter (450) may be made of a first material. As an example, the gas filter (450) may be made of a dielectric material. Meanwhile, the gas filter (450) may be provided with an insertion layer (454) made of a second material that is inserted and disposed inside the gas filter (450) without interfering with the gas flow path (452). Furthermore, the insertion layer (454) may be made of a material different from the first material, and the insertion layer (454) may be made of a conductive material. Meanwhile, multiple insertion layers (454) may have the same angle of inclination and may have a straight cross-section. However, this is not limited thereto, and multiple insertion layers (454) may have two or more inclination angles.

[0061] Accordingly, the equipotential surface is formed at an angle by the insertion layer (454), so that electrons collide with the wall of the gas flow path (452) along the oblique electric field direction, lose energy, and the discharge can be suppressed.

[0063] FIG. 15 is a perspective view showing a gas filter according to an embodiment of the present invention, FIG. 16 is a front view showing a gas filter according to an embodiment of the present invention, and FIG. 17 is a cross-sectional view showing a gas filter according to an embodiment of the present invention.

[0065] Referring to FIGS. 15 to 17, the gas filter (550) may be provided with a gas flow path (552) through which gas flows. Multiple gas flow paths (552) may be provided, and the gas flow paths (552) may be arranged to have a straight shape in the upper and lower directions. As an example, the gas filter (550) may be made of a first material. As an example, the gas filter (450) may be made of a dielectric material. Meanwhile, the gas filter (550) may be provided with an insertion layer (554) made of a second material that is inserted and disposed inside the gas filter (550) without interfering with the gas flow path (552). Furthermore, the insertion layer (554) may be made of a material different from the first material, and the insertion layer (554) may be made of a conductive material. Meanwhile, the insertion layer (554) may have a circular ring shape disposed to surround the gas flow path (552). Additionally, multiple insertion layers (554) may have the same angle of inclination. However, this is not limited thereto, and multiple insertion layers (554) may have two or more angles of inclination.

[0066] Accordingly, the equipotential surface is formed at an angle by the insertion layer (554), so that electrons collide with the wall of the gas flow path (552) along the oblique electric field direction, lose energy, and the discharge can be suppressed.

[0068] Although embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and it will be obvious to those skilled in the art that various modifications and variations are possible within the scope of the technical concept of the present invention as described in the claims. Explanation of the symbols

[0069] 100 : Substrate processing device 110: Vacuum chamber 120 : Upper electrode part 130 : Lower electrode part 140: Gas supply unit 150, 250, 350, 450, 550: Gas filter

Claims

Claim 1 A substrate processing apparatus comprising: a process chamber having an internal space; an upper electrode portion disposed at the upper end of the internal space of the process chamber; a lower electrode portion disposed at the internal space of the process chamber so as to be positioned opposite to the upper electrode portion; and a gas supply portion that supplies cooling gas to the bottom surface of a substrate seated on the upper end of the lower electrode portion; wherein the gas supply portion comprises a gas source disposed outside the process chamber and providing cooling gas; and a gas filter connected to the gas source and guiding cooling gas into the interior of the process chamber; wherein the gas filter comprises a gas flow path through which gas flows, and the gas filter comprises a first region made of a first material and a second region made of a second material having a dielectric constant different from that of the first material, wherein the first region and the second region are arranged so that gas flowing along the gas flow path flows upward while colliding with the wall of the gas flow path, and wherein a plurality of the first region and the second region are alternately arranged along the height direction of the gas flow path and are arranged at an angle with respect to the gas flow path. Claim 2 In claim 1, the gas flow path is a substrate processing device having a straight shape in the upward and downward directions. Claim 3 In claim 1, the first region and the second region are a substrate processing device having the same thickness and angle of inclination. Claim 4 In paragraph 3, the first region and the second region are substrate processing devices positioned lower than the edge at the central part of the gas filter. Claim 5 In paragraph 3, the first region and the second region are a substrate processing device in which one end is positioned lower than the other end. Claim 6 In claim 1, the first region and the second region are a substrate processing device having a plurality of thicknesses and a plurality of inclination angles. Claim 7 A substrate processing device according to claim 6, wherein the thickness of each of the plurality of first regions is different from each other, and the inclination angle of each of the plurality of first regions is different from each other. Claim 8 A substrate processing device according to claim 7, wherein the thickness of each of the plurality of second regions is different from each other, and the inclination angle of each of the plurality of second regions is different from each other. Claim 9 In claim 1, the gas supply unit further comprises a main body installed in the process chamber, forming a substrate processing device. Claim 10 A substrate processing apparatus comprising: a process chamber having an internal space; an upper electrode portion disposed at the upper end of the internal space of the process chamber; a lower electrode portion disposed at the internal space of the process chamber so as to be positioned opposite to the upper electrode portion; and a gas supply portion that supplies cooling gas to the bottom surface of a substrate seated on the upper end of the lower electrode portion; wherein the gas supply portion comprises: a gas source disposed outside the process chamber and providing cooling gas; and a gas filter connected to the gas source and guiding cooling gas into the interior of the process chamber; wherein the gas filter has a gas flow path through which gas flows, and the gas filter has an insertion layer disposed at an angle with respect to the gas flow path, and the insertion layer is spaced apart in multiple numbers along the height direction of the gas flow path.

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