Display device and manufacturing method thereof

Abstract

The present invention provides a display device for filtering only light emitted in a certain direction among light emitted from a display panel and a method for manufacturing the same, comprising: a display panel including a display area; a plurality of transparent partitions disposed on the display panel in the display area; a first layer surrounding the side of each of the plurality of transparent partitions and comprising an oxide of a first light-absorbing material; a second layer surrounding the side of the first layer and comprising the first light-absorbing material; and a third layer surrounding the side of the second layer and comprising the oxide of the first light-absorbing material and having a uniform thickness.

Description

Technology Field

[0001] Embodiments of the present invention relate to a display device and a method for manufacturing the same, and more specifically, to a display device that filters only the light emitted in a certain direction among the light emitted from a display panel and a method for manufacturing the same. Background Technology

[0002] A display device is a device that receives information about an image and displays the image. The emitted light generated from the display panel included in the display device can be emitted in various directions.

[0003] Therefore, a viewing angle control technology is required that can emit only the light traveling in a straight direction through a photonic layer disposed on the display panel. The problem to be solved

[0004] The present invention aims to solve various problems, including those described above, by providing a display device that filters only light emitted in a certain direction from light emitted from a display panel, and a method for manufacturing the same. However, this objective is exemplary and does not limit the scope of the present invention. means of solving the problem

[0005] To solve the aforementioned problem, the present invention may include a display panel comprising a display area, a plurality of transparent partitions disposed on the display panel in the display area, a first layer comprising an oxide of a first light-absorbing material surrounding the side of each of the plurality of transparent partitions, a second layer comprising the first light-absorbing material surrounding the side of the first layer, and a third layer comprising the oxide of the first light-absorbing material surrounding the side of the second layer and having a uniform thickness.

[0006] The first light-absorbing material may include molybdenum (Mo) and tantalum (Ta).

[0007] The oxide of the first light-absorbing material is molytantalum oxide (MoTaO). x It may include , MTO).

[0008] The thickness of the first layer may be thinner as it gets closer to the display panel.

[0009] When viewed from a direction perpendicular to the display panel, the area of ​​the upper surface of the first layer may be larger than the area of ​​the lower surface of the first layer.

[0010] The plurality of transparent partitions include at least a first transparent partition and a second transparent partition, and the first layer includes a first-1 layer surrounding the side of the first transparent partition and a first-2 layer surrounding the side of the second transparent partition, and the distance between the first-1 layer and the first-2 layer may be greater the closer it is to the display panel.

[0011] The thickness of the second layer may be thinner as it gets closer to the display panel.

[0012] The above transparent partition may include polyamide (PI).

[0013] In addition, to solve the aforementioned problems, the present invention may include the steps of forming a plurality of transparent partitions on a display panel; forming a first layer containing an oxide of a first light-absorbing material surrounding the side of each of the plurality of transparent partitions; forming a second layer containing the first light-absorbing material surrounding the side of the first layer; and exposing an oxygen plasma to the surface of the second layer to form a third layer having a uniform thickness containing the oxide of the first light-absorbing material.

[0014] The step of forming the first layer may include covering the upper surface and side surface of each of the plurality of transparent partitions and the upper surface of the display panel exposed between the plurality of transparent partitions with an oxide of the first light-absorbing material, and removing the oxide of the first light-absorbing material covering the upper surface of each of the plurality of transparent partitions and the upper surface of the display panel exposed between the plurality of transparent partitions.

[0015] The step of forming the second layer may include the step of covering the upper surface of each of the plurality of transparent partitions, the side of the first layer, and the upper surface of the display panel that is re-exposed by removing the first light-absorbing material oxide with the first light-absorbing material, and the step of removing the first light-absorbing material covering the upper surface of each of the plurality of transparent partitions, the upper surface of the first layer, and the upper surface of the re-exposed display panel using an anisotropic dry etching process.

[0016] The step of forming the third layer above can oxidize the first light-absorbing material on the surface of the second layer using the oxygen plasma.

[0017] The step of forming the third layer may adjust the time of exposing the oxygen plasma to the surface of the second layer according to the target thickness of the third layer.

[0018] The first light-absorbing material may include molybdenum (Mo) and tantalum (Ta).

[0019] The oxide of the first light-absorbing material is molytantalum oxide (MoTaO). x It may include , MTO).

[0020] The above transparent partition may include polyamide (PI).

[0021] The thickness of the first layer may be thinner as it gets closer to the display panel.

[0022] The thickness of the second layer may be thinner as it gets closer to the display panel. Effects of the invention

[0023] According to one embodiment of the present invention as described above, a display device and a method for manufacturing the same can be implemented, which filters only the light emitted in a certain direction among the light emitted from a display panel. Of course, the scope of the present invention is not limited by this effect. Brief explanation of the drawing

[0024] FIG. 1 is a plan view schematically illustrating a display panel of a display device according to one embodiment of the present invention. Figure 2 is an equivalent circuit diagram of one pixel included in the display panel of Figure 1. FIG. 3 is a cross-sectional view schematically illustrating a part of the display panel of FIG. 1. FIG. 4 is a cross-sectional view schematically illustrating the display panel of FIG. 1 and the optical functional layer disposed on the display panel. FIG. 5 is a cross-sectional view schematically illustrating the display panel of FIG. 1 and the optical functional layer disposed on the display panel. FIG. 6 is a cross-sectional view schematically illustrating a display panel and an optical functional layer disposed on the display panel. FIGS. 7 to 12 are cross-sectional views schematically illustrating a display panel and an optical functional layer disposed on the display panel according to the process sequence. Specific details for implementing the invention

[0025] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various forms.

[0026] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the drawings, identical or corresponding components are given the same reference numerals, and redundant descriptions thereof will be omitted.

[0027] In the following embodiments, when various components such as layers, films, regions, and plates are described as being "on" another component, this includes not only cases where they are "directly on" another component, but also cases where other components are interposed between them. Furthermore, for convenience of explanation, the size of components in the drawings may be exaggerated or reduced. For example, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is depicted.

[0028] In the following embodiments, the x-axis, y-axis, and z-axis are not limited to three axes in an orthogonal coordinate system and can be interpreted in a broader sense that includes them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but they may also refer to different directions that are not orthogonal to each other.

[0029] Hereinafter, based on the above-described contents, a display device according to a preferred embodiment of the present invention will be described in detail as follows.

[0030] FIG. 1 is a plan view schematically illustrating a display panel of a display device according to one embodiment of the present invention.

[0031] As illustrated in FIG. 1, a display device according to one embodiment of the present invention

[0032] As illustrated in FIG. 1, a display device according to one embodiment of the present invention may include a display panel (10). Any display device that includes a display panel (10) is possible. For example, the display device may be various devices such as a smartphone, tablet, laptop, television, or billboard. A display device according to one embodiment of the present invention includes thin-film transistors and capacitors, etc., and the thin-film transistors and capacitors, etc., may be implemented by these conductive layers and insulating layers.

[0033] The display panel (10) includes a display area (DA) and a peripheral area (PA) located outside the display area (DA). In FIG. 1, the display area (DA) is shown as having a rectangular shape. However, the present invention is not limited thereto. The display area (DA) may have various shapes, such as a circle, an ellipse, a polygon, or a specific geometric shape.

[0034] The display area (DA) is a portion that displays an image, and a plurality of pixels (PX) may be arranged therein. Each pixel (PX) may include a display element such as an organic light-emitting diode. Each pixel (PX) may emit light of, for example, red, green, or blue. Such pixels (PX) may be connected to a pixel circuit including a thin film transistor (TFT), a storage capacitor, etc. Such pixel circuits may be connected to a scan line (SL) that transmits a scan signal, a data line (DL) that crosses the scan line (SL) and transmits a data signal, and a driving voltage line (PL) that supplies a driving voltage. The scan line (SL) may extend in the x direction (hereinafter, the second direction), and the data line (DL) and the driving voltage line (PL) may extend in the y direction (hereinafter, the first direction).

[0035] A pixel (PX) can emit light of a luminance corresponding to an electrical signal from an electrically connected pixel circuit. A display area (DA) can display a predetermined image through the light emitted from the pixel (PX). For reference, a pixel (PX) can be defined as a light-emitting area that emits light of any one of red, green, and blue colors as described above.

[0036] The peripheral area (PA) is an area where pixels (PX) are not placed and may be an area that does not display an image. Power supply wiring for driving pixels (PX) may be located in the peripheral area (PA). Additionally, pads may be placed in the peripheral area (PA), and an integrated circuit element, such as a printed circuit board including a driving circuit or a driver IC, may be arranged to be electrically connected to these multiple pads.

[0037] For reference, since the display panel (10) includes a substrate (100), it may be said that the substrate (100) has such a display area (DA) and a peripheral area (PA). Detailed information regarding the substrate (100) will be described later.

[0038] Additionally, a plurality of transistors may be disposed in the display area (DA). Depending on the type of transistor (N-type or P-type) and / or operating conditions, the first terminal of the plurality of transistors may be a source electrode or a drain electrode, and the second terminal may be an electrode different from the first terminal. For example, if the first terminal is a source electrode, the second terminal may be a drain electrode.

[0039] Multiple transistors may include a driving transistor, a data writing transistor, a compensation transistor, an initialization transistor, a light emission control transistor, etc. The driving transistor may be connected between a driving voltage line (PL) and an organic light-emitting diode (OLED), and the data writing transistor may be connected between a data line (DL) and the driving transistor, and may perform a switching operation to transmit a data signal transmitted through the data line (DL).

[0040] The compensation transistor is turned on according to the scan signal received through the scan line (SL) and can compensate the threshold voltage of the driving transistor by connecting the driving transistor and the organic light-emitting diode (OLED).

[0041] The initialization transistor can be turned on according to a scan signal received through the scan line (SL) to deliver an initialization voltage to the gate electrode of the driving transistor, thereby initializing the gate electrode of the driving transistor. The scan line connected to the initialization transistor may be a separate scan line different from the scan line connected to the compensation transistor.

[0042] The light-emitting control transistor can be turned on according to the light-emitting control signal received through the light-emitting control line, and as a result, driving current can flow to the organic light-emitting diode (OLED).

[0043] An organic light-emitting diode (OLED) includes a pixel electrode (anode) and a counter electrode (cathode), and the counter electrode (170) can receive a second power supply voltage (ELVSS). The organic light-emitting diode (OLED) can display an image by receiving a driving current from a driving transistor and emitting light.

[0044] In the following description, an organic light-emitting display device is used as an example to describe a display device according to one embodiment of the present invention, but the display device of the present invention is not limited thereto. As another embodiment, the display device of the present invention may be an inorganic light-emitting display (Inorganic Light Emitting Display or Inorganic EL Display Device) or a display device such as a quantum dot light-emitting display. For example, the light-emitting layer of a display element included in the display device may include an organic material or an inorganic material. In addition, the display device may include a light-emitting layer and a quantum dot located on the path of light emitted from the light-emitting layer.

[0045] Figure 2 is an equivalent circuit diagram of one pixel included in the display panel of Figure 1.

[0046] As shown in FIG. 2, each pixel (PX) includes a pixel circuit (PC) connected to a scan line (SL) and a data line (DL), and an organic light-emitting diode (OLED) connected to the pixel circuit (PC).

[0047] The pixel circuit (PC) includes a driving thin-film transistor (Td), a switching thin-film transistor (Ts), and a storage capacitor (Cst). The switching thin-film transistor (Ts) is connected to a scan line (SL) and a data line (DL), and transmits a data signal (Dm) input through the data line (DL) to the driving thin-film transistor (Td) according to a scan signal (Sn) input through the scan line (SL).

[0048] The storage capacitor (Cst) is connected to the switching thin-film transistor (Ts) and the driving voltage line (PL), and stores a voltage corresponding to the difference between the voltage received from the switching thin-film transistor (Ts) and the first power supply voltage (ELVDD) supplied to the driving voltage line (PL).

[0049] The second power supply voltage (ELVSS) may be a driving voltage having a relatively lower level compared to the first power supply voltage (ELVDD). The level of the driving voltage supplied to each pixel (PX) may be the difference between the levels of the first power supply voltage (ELVDD) and the second power supply voltage (EVLSS).

[0050] The driving thin-film transistor (Td) is connected to the driving voltage line (PL) and the storage capacitor (Cst), and can control the driving current flowing from the driving voltage line (PL) to the organic light-emitting diode (OLED) in correspondence with the voltage value stored in the storage capacitor (Cst). The organic light-emitting diode (OLED) can emit light having a predetermined brightness by the driving current.

[0051] FIG. 2 describes a case where the pixel circuit (PC) includes two thin-film transistors and one storage capacitor, but the present invention is not limited thereto. The pixel circuit (PC) may include two or more storage capacitors.

[0052] FIG. 3 is a cross-sectional view schematically illustrating a part of the display panel of FIG. 1.

[0053] As described above, the substrate (100) may include regions corresponding to a display region (DA) and a peripheral region (PA) outside the display region. The substrate (100) may include various materials having flexible or bendable properties. For example, the substrate (100) may include glass, metal, or polymer resin. Additionally, the substrate (100) may include polymer resins such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. Of course, the substrate (100) may have a multilayer structure including two layers each containing such a polymer resin and a barrier layer containing an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride) interposed between the layers, and various other variations are possible.

[0054] A buffer layer (101) may be located on a substrate (100). The buffer layer (101) may serve as a barrier layer and / or a blocking layer to prevent the diffusion of impurity ions, prevent the penetration of moisture or external air, and flatten the surface. The buffer layer (101) may include silicon oxide, silicon nitride, or silicon oxynitride. Additionally, the buffer layer (101) may control the rate of heat supply during the crystallization process for forming the semiconductor layer (110) so that the semiconductor layer (110) crystallizes uniformly.

[0055] The semiconductor layer (110) may be located on the buffer layer (101). The semiconductor layer (110) may be made of polysilicon and may include a channel region that is not doped with impurities, and source and drain regions formed by doping impurities on both sides of the channel region. Here, the impurities vary depending on the type of thin-film transistor and may be N-type or P-type impurities.

[0056] The gate insulating film (102) may be located on the semiconductor layer (110). The gate insulating film (102) may be configured to ensure insulation between the semiconductor layer (110) and the gate layer (120). The gate insulating film (102) may include inorganic materials such as silicon oxide, silicon nitride and / or silicon oxynitride, and may be interposed between the semiconductor layer (110) and the gate layer (120). Additionally, the gate insulating film (102) may have a structure corresponding to the entire surface of the substrate (100) and may have contact holes formed in a pre-set portion. As such, an insulating film containing inorganic materials may be formed through CVD (chemical vapor deposition) or ALD (atomic layer deposition). This is also true for the embodiments and variations thereof described below.

[0057] The gate layer (120) may be located on the gate insulating film (102). The gate layer (120) may be positioned in a vertically overlapping position with the semiconductor layer (110) and may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), nickel (Li), calcium (Ca), titanium (Ti), tungsten (W), and copper (Cu). A detailed description of the gate layer (120) will be provided later.

[0058] The interlayer insulating film (103) may be located on the gate layer (120). The interlayer insulating film (103) may cover the gate layer (120). The interlayer insulating film (103) may be made of an inorganic material. For example, the interlayer insulating film (103) may be a metal oxide or a metal nitride, and specifically, the inorganic material may include silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZrO2), etc. In some embodiments, the interlayer insulating film (103) is SiO x / SiN y or SiN x / SiO y It can be composed of a double structure.

[0059] The first conductive layer (130) may be located on the upper part of the interlayer insulating film (103). The first conductive layer (130) may serve as an electrode connected to the source / drain region of the semiconductor layer through a through hole included in the interlayer insulating film (103). The first conductive layer (130) may include one or more metals selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), nickel (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). For example, the first conductive layer (130) may include a Ti layer, an Al layer, and / or a Cu layer.

[0060] The first organic insulating layer (104) may be located on the first conductive layer (130). The first organic insulating layer (104) may be an organic insulating layer that covers the upper surface of the first conductive layer (130) and has a generally flat upper surface, thereby acting as a flattening film. The first organic insulating layer (104) may include organic materials such as, for example, acrylic, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane). The first organic insulating layer (104) may be composed of a single layer or multiple layers, and various modifications are possible.

[0061] The second conductive layer (140) may be located on top of the first organic insulating layer (104). The second conductive layer (140) may serve as an electrode connected to the source / drain region of the semiconductor layer through a through hole included in the first organic insulating layer (104). The second conductive layer (140) may include one or more metals selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), nickel (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). For example, the second conductive layer (140) may include a Ti layer, an Al layer, and / or a Cu layer.

[0062] The second organic insulating layer (105) may be located on the first conductive layer (130). The second organic insulating layer (105) may be an organic insulating layer that covers the upper part of the first conductive layer (130) and has a generally flat upper surface, acting as a flattening film. The second organic insulating layer (105) may include organic materials such as, for example, acrylic, BCB (Benzocyclobutene), or HMDSO (hexamethyldisiloxane). The second organic insulating layer (105) may be composed of a single layer or multiple layers, allowing for various variations.

[0063] In addition, although not illustrated in FIG. 3, an additional conductive layer and an additional insulating layer may be interposed between the conductive layer and the pixel electrode, and it is understood that this can be applied in various embodiments. In this case, the additional conductive layer may include the same material as the conductive layer described above and may have the same layer structure. The additional insulating layer may include the same material as the organic insulating layer described above and may have the same layer structure.

[0064] A pixel electrode (150) may be located on a second organic insulating layer (105). The pixel electrode (150) may be connected to a second conductive layer (140) through a contact hole formed in the second organic insulating layer (105). A display element may be located on the pixel electrode (150). An organic light-emitting diode (OLED) may be used as the display element. That is, an organic light-emitting diode (OLED) may be interposed, for example, on the pixel electrode (150). Such a pixel electrode (150) may include a transparent conductive layer formed of a transparent conductive oxide such as ITO, In2O3, or IZO, and a reflective layer formed of a metal such as Al or Ag. For example, the pixel electrode (150) may have a three-layer structure of ITO / Ag / ITO.

[0065] The pixel defining film (106) is positioned on the second organic insulating layer (105) and can be arranged to cover the edge of the pixel electrode (150). That is, the pixel defining film (106) can cover the edge of the pixel electrode (150). The pixel defining film (106) has an opening corresponding to the pixel (PX), and the opening can be formed so that at least the central part of the pixel electrode (150) is exposed. Such a pixel defining film (106) may include an organic material such as polyimide or HMDSO (hexamethyldisiloxane). In addition, a spacer (80) may be disposed on the pixel defining film (106).

[0066] The spacer (80) is shown as being located on the surrounding area (PA), but may also be located on the display area (DA). The spacer (80) can prevent damage to the organic light-emitting diode (OLED) caused by sagging of the mask during a manufacturing process using a mask. The spacer (80) includes an organic insulating material and may be formed as a single layer or multiple layers.

[0067] The intermediate layer (160) and the counter electrode (170) may be located on the opening of the pixel defining film (106). The intermediate layer (160) may include a low molecular weight or high molecular weight material, and if it includes a low molecular weight material, the intermediate layer (160) may include a hole injection layer, a hole transport layer, an emission layer, an electron transport layer and / or an electron injection layer. If the intermediate layer (160) includes a high molecular weight material, the intermediate layer (160) may generally have a structure including a hole transport layer and an emission layer.

[0068] The counter electrode (170) may include a transparent conductive layer formed from a transparent conductive oxide such as ITO, In2O3, or IZO. The pixel electrode (150) is used as an anode, and the counter electrode (170) is used as a cathode. Of course, the polarity of the electrodes may be applied in reverse.

[0069] The structure of the intermediate layer (160) is not limited to the above description and may have various structures. For example, at least one of the layers forming the intermediate layer (160) may be formed as a single unit, such as the counter electrode (170). In another embodiment, the intermediate layer (160) may include a layer patterned to correspond to each of the plurality of pixel electrodes (150).

[0070] The counter electrode (170) is positioned above the display area (DA) and may be positioned on the front of the display area (DA). That is, the counter electrode (170) may be formed as a single unit to cover a plurality of pixels. The counter electrode (170) may be electrically contacted to a common power supply line (not shown) positioned in the peripheral area (PA). In one embodiment, the counter electrode (170) may extend to a barrier wall (200). The thin film encapsulation layer (TFE) covers the entire display area (DA) and may be positioned to extend toward the peripheral area (PA) to cover at least a portion of the peripheral area (PA).

[0071] The thin film encapsulation layer (TFE) may extend to the outside of a common power supply line (not shown). The thin film encapsulation layer (TFE) may include a first inorganic encapsulation layer (310), a second inorganic encapsulation layer (330), and an organic encapsulation layer (320) interposed between them. The first inorganic encapsulation layer (310) and the second inorganic encapsulation layer (330) may include one or more inorganic materials such as aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0072] The first inorganic sealing layer (310) and the second inorganic sealing layer (330) may be a single layer or a multilayer containing the aforementioned material. The first inorganic sealing layer (310) and the second inorganic sealing layer (330) may contain the same material or different materials. The thicknesses of the first inorganic sealing layer (310) and the second inorganic sealing layer (330) may differ from each other. The thickness of the first inorganic sealing layer (310) may be greater than the thickness of the second inorganic sealing layer (330). Alternatively, the thickness of the second inorganic sealing layer (330) may be greater than the thickness of the first inorganic sealing layer (310), or the thicknesses of the first inorganic sealing layer (310) and the second inorganic sealing layer (330) may be the same.

[0073] The organic encapsulation layer (320) may include monomer-based materials or polymer-based materials. Polymer-based materials may include acrylic resin, epoxy resin, polyimide, and polyethylene. In one embodiment, the organic encapsulation layer (320) may include acrylate.

[0074] A barrier wall (200) may be located on the peripheral region (PA) of the substrate (100). In one embodiment, the barrier wall (200) may include a part of the first organic insulating layer (104), a part (230) of the second organic insulating layer (105), a part (220) of the pixel defining film (106), and a part (210) of the spacer (80), but is not necessarily limited thereto.

[0075] In some cases, the barrier wall (200) may consist only of a part (230) of the second organic insulating layer (105) or a part (220) of the pixel defining film (106). The barrier wall (200) is positioned to surround the display area (DA) and can prevent the organic encapsulation layer (320) of the thin film encapsulation layer (TFE) from overflowing to the outside of the substrate (100). Accordingly, the organic encapsulation layer (320) may come into contact with the inner surface of the barrier wall (200) facing the display area (DA). At this time, the statement that the organic encapsulation layer (320) comes into contact with the inner surface of the barrier wall (200) can be understood as the first inorganic encapsulation layer (310) being located between the organic encapsulation layer (320) and the barrier wall (200), and the organic encapsulation layer (320) coming into contact with this first inorganic encapsulation layer (310).

[0076] The first inorganic sealing layer (310) and the second inorganic sealing layer (330) are disposed on the barrier wall (200) and may extend toward the edge of the substrate (100). However, in some cases, the barrier wall (200) may include multiple layers.

[0077] FIG. 4 is a cross-sectional view schematically illustrating the display panel of FIG. 1 and the optical functional layer disposed on the display panel. For reference, the term "side" in this specification may refer to a surface facing a direction parallel to the substrate among several directions. In other words, the term "side" in this specification may refer to the remaining surfaces among the surfaces constituting the component, excluding the lower surface facing the substrate and the upper surface facing the opposite direction of the substrate, in a cross-sectional view such as FIG. 4.

[0078] As illustrated in FIG. 4, the display device according to the present embodiment may include a display panel (10) and a photofunctional layer disposed on the display panel (10). The photofunctional layer may include a plurality of light-absorbing structures (20) disposed on the display panel (10). That is, the plurality of light-absorbing structures (20) may include a plurality of transparent partitions (21) disposed on the display panel (10) and a light-absorbing layer (22, 23, 24) surrounding the sides of each of the plurality of transparent partitions (21).

[0079] The display device according to the present embodiment has an in-cell structure in which an optical film is not attached to the display panel, but rather a light-absorbing structure formed around a transparent partition using an organic film is formed on the display panel (10). Therefore, the display device according to the present embodiment has a specific advantage in that it does not require a separate material for attaching the optical film and does not involve an additional process for attaching the optical film.

[0080] The light absorption layer (22, 23, 24) may include a first layer (22) surrounding the sides of each of the plurality of transparent partitions (21), a second layer (23) surrounding the sides of the first layer (22), and a third layer (24) surrounding the sides of the third layer (24).

[0081] A plurality of transparent partitions (21) may be placed in a display area (DA) of a display panel (10). A plurality of transparent partitions (21) may extend in a direction perpendicular to the upper surface of the display panel (10). A plurality of transparent partitions (21) may be made of a transparent material and may be an organic material having transparent properties. For example, a plurality of transparent partitions (21) may each include polyamide (PI). In the present invention, the transparent partition (21) may serve as a support for forming a layer containing a light-absorbing material, and at the same time, may be a structure that is transparent so that emitted light can be transmitted.

[0082] The first layer (22) surrounds the side of the transparent partition (21) and may contain an oxide of the first light-absorbing material. The second layer (23) surrounds the side of the first layer (22) and may contain the first light-absorbing material. The third layer (24) surrounds the side of the second layer (23) and may contain an oxide of the first light-absorbing material. At this time, the third layer (24) may have a uniform thickness.

[0083] The first layer (22) may have a non-uniform thickness. Specifically, the thickness of the first layer (22) may be thinner as it approaches the display panel (10). The first layer (22) may be formed by an anisotropic etching process, as described later in the description of the manufacturing method.

[0084] When the first layer (22) is formed by an anisotropic etching process, it may have a non-uniform thickness. Since the oxide of the first light-absorbing material is susceptible to the etching solution, the thickness of the first layer (22) may be relatively thinner the closer it is to the display panel (10). That is, when viewed from a direction perpendicular to the display panel (10), the area of ​​the upper surface of the first layer (22) may be larger than the area of ​​the lower surface of the first layer (22).

[0085] The first layer (22) may be configured to prevent light incident into the interior of the transparent partition (21) from escaping to the side. That is, the first layer (22) may perform the function of absorbing light escaping to the side so that light incident into each of the multiple transparent partitions (21) can be emitted in a straight direction.

[0086] The thickness of the second layer (23) may be thinner as it gets closer to the display panel (10). That is, the second layer (23) may also have a non-uniform thickness, just like the first layer (22). Since the first light-absorbing material is susceptible to the etching solution, the thickness of the second layer (23) may be relatively thinner as it gets closer to the display panel (10). That is, when viewed from a direction perpendicular to the display panel (10), the area of ​​the upper surface of the second layer (23) may be larger than the area of ​​the lower surface of the second layer (23).

[0087] The first light-absorbing material included in the second layer (23) may include molybdenum (Mo) and tantalum (Ta). Alternatively, the first light-absorbing material may include at least one of molybdenum (Mo), manganese (Mn), and magnesium (Mg), and these materials may be metals having a light absorption coefficient. Alternatively, the first light-absorbing material may be a molybdenum alloy (Mo alloy). Since the molybdenum alloy (Mo alloy) is relatively more resistant to etching solutions or cleaning solutions than pure molybdenum (pure Mo), the layer containing the molybdenum alloy (Mo alloy) may be relatively less damaged on the surface when performing an etching process or a cleaning process.

[0088] In addition, the oxide of the first light-absorbing material included in the first layer (22) and the third layer (24) is molytantalum oxide (MoTaO). x It may include (MTO). That is, the first layer (22) and the third layer (24) may include a material in which molybdenum (Mo) and tantalum (Ta), which are the first light-absorbing materials described above, are oxidized.

[0089] At this time, molytantalum oxide (MoTaO) x The tantalum (Ta) content in the MTO may be 2 at% or more and 15 at% or less. Molybdenum (Mo) is a representative light-absorbing material, but the higher the tantalum (Ta) content, the lower the light-absorbing properties of molybdenum (Mo) may become. Nevertheless, if the light-absorbing layer (22, 23, 24) is formed using only pure molybdenum (Mo), pure molybdenum (Mo) dissolves easily in a cleaning solution (e.g., water); therefore, tantalum (Ta) may be mixed in a certain proportion to prevent this. Thus, an appropriate ratio of tantalum (Ta) is important.

[0090] If the tantalum (Ta) content is less than 2 at%, the light absorption layer (22, 23, 24) is easily dissolved in the cleaning solution, and damage to the surface of the light absorption layer (22, 23, 24) is likely to occur. Conversely, if the tantalum (Ta) content is greater than 15 at%, the light absorption of the light absorption layer (22, 23, 24) may decrease excessively.

[0091] As described later in the description of the manufacturing method, the third layer (24) is formed by an oxygen plasma process and may not be formed by a separate etching process. If the third layer (24) is formed by an etching process, a uniform thickness may not be formed, and it may be eroded by a solvent used in subsequent processes such as a cleaning process (e.g., tetramethylammonium hydroxide (TMAH)). As a result, structural instability may occur, such as cracks occurring on the surface of the third layer (24) and having a thinner thickness as it gets closer to the display panel (10). If structural instability occurs, such as cracks occurring on the surface of the third layer (24), a problem may arise where the light absorption performance is significantly reduced.

[0092] The third layer (24) is configured to transmit only light in a straight direction among the light emitted from the outside of the transparent partition (21), and can perform the role of absorbing oblique light among the light emitted from the display panel (10). Therefore, it may be important that the third layer (24) does not suffer damage to its outer surface.

[0093] Accordingly, the third layer (24) of the display device according to the present embodiment is formed by oxidizing the second layer (23) by an oxygen plasma process so as not to require an etching process and a subsequent process of the etching process, and as a result, the third layer (24) can have a uniform thickness.

[0094] Specifically, the thickness of the third layer (24) may refer to the vertical distance between one side in contact with the second layer (23) and the other side located opposite the second layer (23). The thickness of the third layer (24) may refer to the thickness in a direction parallel to the display panel (10) from the surface where the second layer (23) and the third layer (24) meet.

[0095] The statement that the third layer (24) has a uniform thickness may mean that the same thickness is measured regardless of where it is measured. Alternatively, the statement that the third layer (24) has a uniform thickness may mean that the thickness is measured within an error range of about 10% regardless of where it is measured. In this case, the third layer (24) may have a uniform thickness within an error range of 10%.

[0096] FIG. 5 is a cross-sectional view schematically illustrating the display panel of FIG. 1 and the optical functional layer disposed on the display panel.

[0097] As illustrated in FIG. 5, the photofunctional layer may further include an organic layer (25) that fills the space between a plurality of light-absorbing structures (20). The organic layer (25) may include a transparent organic material such as polyamide (PI).

[0098] FIG. 6 is a cross-sectional view schematically illustrating a display panel and an optical functional layer disposed on the display panel.

[0099] As shown in FIG. 6, the plurality of light-absorbing structures (20) may include at least a first light-absorbing structure (20a) and a second light-absorbing structure (20b). In addition, other light-absorbing structures not shown in FIG. 6 may be further included.

[0100] The first layer (22) may include a first-1 layer (22a) surrounding the side of the first transparent partition (21a). Additionally, the first layer (22) may include a first-2 layer (22b) surrounding the side of the second transparent partition. Furthermore, the first layer (22) may include other layers surrounding the sides of other transparent partitions.

[0101] The second layer (23) may include a second-1 layer (23a) that surrounds the side of the first-1 layer (22a). Additionally, the second layer (23) may include a second-2 layer (23b) that surrounds the side of the first-2 layer (22b). Furthermore, the second layer (23) may include other layers that surround the sides of other transparent partitions.

[0102] The third layer (24) may include a third-1 layer (24a) that surrounds the side of the second-1 layer (23a). Additionally, the third layer (24) may include a third-2 layer (24b) that surrounds the side of the second-2 layer (23b). Furthermore, the third layer (24) may include other layers that surround the sides of other transparent partitions.

[0103] The width of the upper surface (L21) and the width of the lower surface (L21') of the first transparent partition (21a) included in the first light-absorbing structure (20a) may be equal to each other. The width of the upper surface (L22) of the first-1 layer (22a) may be greater than the width of the lower surface (L22') of the first-1 layer (22a). The width of the upper surface (L23) of the second-1 layer (23a) may be greater than the width of the lower surface (L23') of the second-1 layer (23a). This is because the second-1 layer (23a) is also formed by an etching process. The width of the upper surface (L24) of the third-1 layer (24a) may be equal to the width of the lower surface (L24') of the third-1 layer (24a).

[0104] The characteristics of the components (21b, 22b, 23b, 24b) included in the second light-absorbing structure (20b) may be the same as the characteristics of the components (21a, 22a, 23a, 24a) included in the first light-absorbing structure (20a).

[0105] At this time, the lower surface (L21', L22', L23', L24') is the surface where the optical functional layer and the display panel (10) come into contact, and the upper surface (L21, L22, L23, L24) may mean the surface located opposite the lower surface (L21', L22', L23', L24').

[0106] The distance between the first-1 layer (22a) and the first-2 layer (22b) can be larger the closer it is to the display panel (10).

[0107] Additionally, the thickness of the second-1 layer (23a) and the second-2 layer (23b) may not be uniform and may become thinner as it gets closer to the display panel (10), so the distance between the second-1 layer (23a) and the second-2 layer (23b) may be larger as it gets closer to the display panel (10).

[0108] Additionally, since the thickness of the third-1 layer (24a) and the third-2 layer (24b) is uniform, the distance between the third-1 layer (24a) surrounding the side of the second-1 layer (23a) and the third-2 layer (24b) surrounding the side of the second-2 layer (23b) can be determined by the non-uniform thickness of the first-1 layer (22a), the first-2 layer (22b), the second-1 layer (23a), and the second-2 layer (23b). That is, the distance between the third-1 layer (24a) and the third-2 layer (24b) can be greater the closer it is to the display panel (10).

[0109] In other words, the distance (L1) between the upper surface of the third-1 layer (24a) and the upper surface of the third-2 layer (24b) may be smaller than the distance (L2) between the lower surface of the third-1 layer (24a) and the lower surface of the third-2 layer (24b).

[0110] Hereinafter, based on the above-described contents, a method for manufacturing a display device (hereinafter referred to as the manufacturing method) according to another preferred embodiment of the present invention will be described in detail as follows. However, any content identical to or overlapping with the description of the display device described above in the description of the manufacturing method according to this embodiment may be omitted.

[0111] FIGS. 7 to 12 are cross-sectional views schematically illustrating a display panel and an optical functional layer disposed on the display panel according to the process sequence.

[0112] As illustrated in FIG. 7, a manufacturing method according to another embodiment of the present invention may include the step (S1100) of forming a plurality of transparent partitions (21) on a display panel (10). The plurality of transparent partitions (21) may include a transparent organic material such as polyamide (PI). The step of forming the plurality of transparent partitions (21) may involve forming a polyamide (PI) layer on the display panel (10) and forming the plurality of transparent partitions (21) using a mask of a pattern of a preset shape.

[0113] As illustrated in FIGS. 8 and 9, a manufacturing method according to another embodiment of the present invention may further include the step (S1200) of forming a plurality of transparent partitions (21) and then forming a first layer (22) comprising an oxide of a first light-absorbing material that surrounds the sides of each of the plurality of transparent partitions (21). At this time, the oxide of the first light-absorbing material is molytantalum oxide (MoTaO) as described above. x It may include , MTO).

[0114] The step (S1200) of forming the first layer (22) can form an oxide layer of a first light-absorbing material that covers the side and top surfaces of a plurality of transparent partitions (21) and covers the top surface of a display panel (10) exposed between the plurality of transparent partitions (21).

[0115] The step (S1200) of forming the first layer (22) may be formed by applying an anisotropic dry etching process to the oxide layer of the first light-absorbing material, so that the first layer (22) surrounds the sides of each of the plurality of transparent partitions (21). At this time, depending on the characteristics of the oxide of the first light-absorbing material which is susceptible to the anisotropic dry etching process, the thickness of the formed first layer (22) may be thinner the closer it is to the display panel (10).

[0116] That is, the step (S1200) of forming the first layer (22) may include the step (S1210) of covering the upper and side surfaces of each of the plurality of transparent partitions (21) and the upper surface of the display panel (10) exposed between the plurality of transparent partitions (21) with an oxide of the first light-absorbing material, and the step (S1220) of removing the oxide of the first light-absorbing material covering the upper surface of each of the plurality of transparent partitions (21) and the upper surface of the display panel (10) exposed between the plurality of transparent partitions (21) using an anisotropic dry etching process.

[0117] As illustrated in FIGS. 10 and 11, a manufacturing method according to another embodiment of the present invention may further include the step (S1300) of forming a first layer (22) and then forming a second layer (23) that surrounds the side of the first layer (22) and includes a first light-absorbing material. At this time, the first light-absorbing material may include molybdenum (Mo) and tantalum (Ta) as described above.

[0118] The step (S1300) of forming the second layer (23) can form a first light-absorbing material layer that covers the upper surface of a plurality of transparent partitions (21), the side of the first layer (22), and the upper surface of the first layer (22), and covers the upper surface of the display panel (10) exposed between the plurality of transparent partitions (21).

[0119] The step (S1300) of forming the second layer (23) may be formed by applying an anisotropic dry etching process to the first light-absorbing material layer so that the second layer (23) surrounds the side of the first layer (22). At this time, the thickness of the second layer (23) formed by the anisotropic dry etching process may be thinner as it gets closer to the display panel (10).

[0120] That is, the step of forming the second layer (S1300) may include a step (S1310) of covering the upper surface of each of the plurality of transparent partitions (21), the side of the first layer (22), and the upper surface of the display panel (10) that has been re-exposed by removing the first light-absorbing oxide with the first light-absorbing material, and a step (S1320) of removing the first light-absorbing material covering the upper surface of each of the plurality of transparent partitions (21), the upper surface of the first layer (22), and the upper surface of the re-exposed display panel (10) using an anisotropic dry etching process.

[0121] Conversely, unlike as illustrated in FIGS. 9 to 11, after an oxide layer of a first light-absorbing material corresponding to the first layer (22) is formed, and after a first light-absorbing material layer corresponding to the second layer (23) is formed on the oxide layer of the first light-absorbing material, the oxide layer of the first light-absorbing material corresponding to the first layer (22) and the first light-absorbing material layer corresponding to the second layer (23) can be manufactured directly by omitting the process described in FIGS. 9 and 10 through a mask of a preset shape, thereby manufacturing the display device of FIG. 11.

[0122] As illustrated in FIG. 12, a manufacturing method according to another embodiment of the present invention may further include the step (S1400) of forming a second layer (23) and then forming a third layer (24) that surrounds the side of the second layer (23) and includes an oxide of a first light-absorbing material. At this time, the oxide of the first light-absorbing material is molytantalum oxide (MoTaO) as described above. x It may include , MTO).

[0123] The step (S1400) of forming the third layer (24) can be carried out as an oxygen plasma process in which oxygen plasma is injected into the previously formed second layer (23). The surface of the second layer (23) is modified by being evenly exposed to the oxygen plasma, thereby forming a third layer (24) of uniform thickness. In this way, the third layer (24) formed without using an etching process can have a uniform thickness. Furthermore, the oxygen plasma process has the advantage that the thickness of the third layer (24) can be easily controlled by adjusting the concentration of the oxygen plasma, the exposure time of the surface of the second layer (23), etc.

[0124] Specifically, a display device formed up to a second layer (23) can be prepared inside a vacuum chamber (not shown). Subsequently, oxygen plasma can be injected into the vacuum chamber (not shown) through a plasma generator (not shown) connected to the vacuum chamber (not shown). As an example, the plasma generator (not shown) may be an Electron Cyclotron Resonance (ECR) plasma generator. An Electron Cyclotron Resonance plasma generator can form a high-density plasma having a high plasma electron temperature by using an electric field and a magnetic field simultaneously. The plasma generator (not shown) may include an electromagnetic wave oscillator, a resonator, and a magnet, etc.

[0125] As an example, oxygen plasma may be provided to a display device prepared inside a chamber (not shown) for a predetermined amount of time, thereby oxidizing and modifying the surface of the second layer (23). The time during which the surface of the second layer (23) is exposed to oxygen plasma may be adjusted according to the thickness of the third layer (24).

[0126] In this way, the third layer (24) is formed in the final process, and since no additional etching or cleaning process is required during the process of forming the third layer, the surface damage of the third layer formed by the oxygen plasma process (a process of exposing oxygen plasma to a target) can be minimized.

[0127] As such, the present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0128] 100: Substrate 10: Display panel 20; Light-absorbing structure 21: Transparent partition 22: Layer 1 23: Layer 2 24: 3rd Layer 25: Organic Layer

Claims

Claim 1 A display device comprising: a display panel including a display area; a plurality of transparent partitions disposed on the display panel in the display area; a first layer surrounding the sides of each of the plurality of transparent partitions and comprising an oxide of a first light-absorbing material; a second layer surrounding the sides of the first layer and comprising the first light-absorbing material; and a third layer surrounding the sides of the second layer and comprising an oxide of the first light-absorbing material and having a uniform thickness. Claim 2 A display device according to claim 1, wherein the first light-absorbing material comprises molybdenum (Mo) and tantalum (Ta). Claim 3 In claim 1, the oxide of the first light-absorbing material is molytantalum oxide (MoTaO x A display device including , MTO). Claim 4 A display device according to claim 1, wherein the thickness of the first layer becomes thinner as it approaches the display panel. Claim 5 A display device according to claim 1, wherein, when viewed from a direction perpendicular to the display panel, the area of ​​the upper surface of the first layer is larger than the area of ​​the lower surface of the first layer. Claim 6 A display device according to claim 1, wherein the plurality of transparent partitions include at least a first transparent partition and a second transparent partition, and the first layer includes a first-1 layer surrounding the side of the first transparent partition and a first-2 layer surrounding the side of the second transparent partition, and the distance between the first-1 layer and the first-2 layer is greater the closer it is to the display panel. Claim 7 A display device according to claim 1, wherein the thickness of the second layer becomes thinner as it approaches the display panel. Claim 8 A display device according to claim 1, wherein the transparent partition comprises polyamide (PI). Claim 9 A method for manufacturing a display device comprising: forming a plurality of transparent partitions on a display panel; forming a first layer containing an oxide of a first light-absorbing material surrounding the sides of each of the plurality of transparent partitions; forming a second layer containing the first light-absorbing material surrounding the sides of the first layer; and exposing an oxygen plasma to the surface of the second layer to form a third layer having a uniform thickness containing the oxide of the first light-absorbing material. Claim 10 A method for manufacturing a display device according to claim 9, wherein the step of forming the first layer comprises: covering the upper surface and side surface of each of the plurality of transparent partitions and the upper surface of the display panel exposed between the plurality of transparent partitions with an oxide of the first light-absorbing material; and removing the oxide of the first light-absorbing material covering the upper surface of each of the plurality of transparent partitions and the upper surface of the display panel exposed between the plurality of transparent partitions. Claim 11 A method for manufacturing a display device according to claim 10, wherein the step of forming the second layer comprises: covering the upper surface of each of the plurality of transparent partitions, the side surface of the first layer, and the upper surface of the display panel that is re-exposed by removing the oxide of the first light-absorbing material with the first light-absorbing material; and removing the first light-absorbing material covering the upper surface of each of the plurality of transparent partitions, the upper surface of the first layer, and the upper surface of the re-exposed display panel using an anisotropic dry etching process. Claim 12 A method for manufacturing a display device, wherein the step of forming the third layer involves oxidizing the first light-absorbing material on the surface of the second layer using the oxygen plasma in claim 11. Claim 13 In claim 12, the step of forming the third layer involves adjusting the time of exposing the oxygen plasma to the surface of the second layer according to the target thickness of the third layer, in a method for manufacturing a display device. Claim 14 A method for manufacturing a display device according to claim 9, wherein the first light-absorbing material comprises molybdenum (Mo) and tantalum (Ta). Claim 15 In claim 9, the oxide of the first light-absorbing material is molytantalum oxide (MoTaO x A method for manufacturing a display device including , MTO). Claim 16 A method for manufacturing a display device according to claim 9, wherein the transparent partition comprises polyamide (PI). Claim 17 A method for manufacturing a display device according to claim 9, wherein the thickness of the first layer becomes thinner as it approaches the display panel. Claim 18 A method for manufacturing a display device according to claim 9, wherein the thickness of the second layer becomes thinner as it approaches the display panel.

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