Architecture of InGaAs / GaAsSb superlattice on InP substrate
KR103013091B1Active Publication Date: 2026-09-01LYNRED +1
Patent Information
- Application Number
- KR1020237021250
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2020-12-23
- Filing Date
- 2021-11-26
- Publication Date
- 2026-09-01
- Estimated Expiration
- 2041-11-26
Smart Images
Figure 112023069015831-PCT00038_ABST
Abstract
The present invention relates to an infrared detection device comprising at least one pixel including a first superlattice formed by a repetition of a basic group comprising: a first layer having a first energy gap and a first conduction band value; at least one second layer having a second energy gap and a second conduction band value strictly lower than the first conduction band value; and a third layer having a third energy gap narrower than the first and second energy gaps and a third conduction band value strictly lower than the second conduction band value. The basic group is formed according to a first stacking configuration in the following order: a second layer, a third layer, a second layer, and then a first layer; or is formed according to a second stacking configuration such that the third layer is limited between the first layer and the second layer.
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Citation Information
Patent Citations
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