optoelectronic semiconductor components

Abstract

The present invention relates to an optoelectronic semiconductor component (100) comprising, in at least one embodiment, a semiconductor layer sequence (1) having an active layer (10) for generating primary radiation; at least one injection structure (2) on a first side (11) of the semiconductor layer sequence for injecting charge carriers into the semiconductor layer sequence; and at least one mirror structure (3) on the first side of the semiconductor layer sequence and parallel to the injection structure for reflecting radiation generated within the semiconductor component. The mirror structure has a higher reflectivity than the injection structure for radiation generated within the semiconductor component.

Description

Technology Field

[0001] Optoelectronic semiconductor components are provided. The problem to be solved

[0002] The objective of the present invention is to provide an improved optoelectronic semiconductor component, for example, a high-efficiency semiconductor component. means of solving the problem

[0003] These problems are addressed, in particular, through the subject matter of independent patent claim 1. Preferred embodiments and improvements are the subject matter of dependent patent claims and are further shown in the following description and drawings.

[0004] According to at least one embodiment, the optoelectronic semiconductor component comprises a sequence of semiconductor layers having an active layer. The active layer may be configured to generate electromagnetic primary radiation. The primary radiation is generated, for example, through the recombination of electrons and holes within the active layer.

[0005] The semiconductor layer sequence is based, for example, on III-V compound semiconductor materials. The semiconductor material is, for example, Al n In 1-n-m Ga m It is a nitride compound semiconductor material such as N, or Al n In 1-n-m Ga m It is a phosphide compound semiconductor material such as P, or Al n In 1-n-m Ga m As or Al n In 1-n-m Ga mIt is an arsenic compound semiconductor material such as AsP, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and m + n ≤ 1, respectively. In this case, the semiconductor layer sequence may have additional components in addition to the dopants. However, for simplification, only the essential components of the crystal lattice of the semiconductor layer sequence, namely Al, As, Ga, In, N, or P, are specified, even if these essential components may be partially replaced and / or supplemented by small amounts of additional materials. Preferably, the semiconductor layer sequence is based on AlInGaN.

[0006] The active layer of the semiconductor layer sequence comprises, in particular, at least one pn junction and / or at least one quantum well structure in the form of a Single Quantum Well (SQW) or a Multiple Quantum Well (MQW) structure. Preferably, the semiconductor component comprises one, in particular, exactly one, connected, in particular simply connected active layer. Alternatively, the active layer may be segmented.

[0007] The active layer can generate electromagnetic radiation within the blue, green, or red spectrum region, or within the UV region, or within the IR region, when operating as intended, for example.

[0008] A semiconductor component may be a semiconductor chip. Herein and below, a semiconductor chip refers to an element that can be handled separately and is electrically contactable. The semiconductor chip is created, for example, through singulation from a wafer composite. The sides of the semiconductor chip may contain traces from the singulation process of the wafer composite. The semiconductor chip comprises, for example, exactly one region of a semiconductor layer sequence grown within the wafer composite that is originally connected. The semiconductor layer sequence of the semiconductor chip is preferably formed in a connected manner. The lateral extension of the semiconductor chip, measured parallel to the main extension plane of the active layer, is, for example, up to 1%, up to 5%, or up to 10% larger than the lateral extension of the active layer. The semiconductor chip also comprises, for example, a growth substrate on which the entire semiconductor layer sequence is grown.

[0009] Here and below, lateral extensions refer, for example, to extensions or extensions in each arbitrary lateral direction. The lateral direction is a direction parallel to the main extension plane of the active layer.

[0010] The semiconductor chip may be a so-called volume emitter, particularly a flip chip. In this case, for example, the semiconductor chip also includes a growth substrate formed, for example, of sapphire. Alternatively, the semiconductor chip may be a surface emitter, particularly a so-called thin-film chip. In this case, the growth substrate is separated, for example.

[0011] According to at least one embodiment, the semiconductor component includes at least one injection structure. The injection structure is arranged, for example, on a first side of a semiconductor layer sequence. The injection structure may be provided or configured for the injection of charge carriers into the semiconductor layer sequence. When the semiconductor component operates as intended, charge carriers, such as holes or electrons, are injected into the semiconductor layer sequence through the injection structure. In particular, charge carriers are injected into the semiconductor layer arranged between the active layer and the first side through the injection structure.

[0012] The injection structure is an electrically conductive structure. For injection, the injection structure may come into direct contact with a semiconductor layer sequence on a first side. The first side of the semiconductor layer sequence is, for example, a side that limits or terminates the semiconductor layer sequence in a direction away from the active layer. The first side may be formed through an n-type layer or a p-type layer of the semiconductor layer sequence.

[0013] According to at least one embodiment, the semiconductor component includes at least one mirror structure. The mirror structure is arranged, for example, on a first side of a semiconductor layer sequence. The mirror structure may be arranged alongside an injection structure. The mirror structure is configured or provided, for example, for reflecting radiation generated within the semiconductor component, for example, primary radiation.

[0014] The term "sideways" means, for example, being parallel to the injection structure in a lateral direction. The mirror structure may be in contact with the injection structure in a lateral direction. The mirror structure may be in direct contact with the semiconductor layer sequence in a first side.

[0015] According to at least one embodiment, the mirror structure has a higher reflectance than the injection structure for radiation generated within the semiconductor component, e.g., primary radiation. In particular, this applies to radiation of the semiconductor component reaching the mirror structure or the injection structure from the semiconductor layer sequence through the first side. That is, the injection structure and the reflect structure are configured such that the reflectance for radiation emitted from the semiconductor layer sequence through the first side, particularly primary radiation, is greater when such radiation subsequently reaches the mirror structure than when such radiation subsequently reaches the injection structure.

[0016] The reflectance of the mirror structure is, for example, at least 1.05 times, or at least 1.1 times, or at least 1.5 times the reflectance of the injection structure. For example, the reflectance of the mirror structure is at least 90%, or at least 95%, or at least 99%.

[0017] Here and below, variables such as reflectance, transmittance, absorption, refractive index, etc. correspond to, for example, the wavelength at which radiation generated within a semiconductor component, particularly primary radiation, has maximum intensity.

[0018] In at least one embodiment, the optoelectronic semiconductor component comprises: a semiconductor layer sequence having an active layer for generating primary radiation; at least one injection structure on a first side of the semiconductor layer sequence for injecting charge carriers into the semiconductor layer sequence; and at least one mirror structure on the first side of the semiconductor layer sequence and parallel to the injection structure for reflecting radiation generated within the semiconductor component. The mirror structure has a higher reflectivity than the injection structure for radiation generated within the semiconductor component.

[0019] The present invention is based particularly on the knowledge that structures having good injection characteristics frequently do not have very good reflection characteristics. Nevertheless, in order to achieve sufficient reflection within a semiconductor component, the present invention uses a mirror structure specifically configured and arranged for the reflection of generated radiation, in addition to a particularly optimized injection structure configured for injection, which, overall, can induce improved reflection in the direction of the main emission side opposite the structures.

[0020] According to at least one embodiment, an injection layer for injecting charge carriers into a semiconductor layer sequence is arranged on a first side so as to be in direct contact with the semiconductor layer sequence. The injection layer is configured, for example, to form an ohmic contact with a semiconductor layer adjacent to the first side.

[0021] The injection layer may be part of an injection structure and / or a mirror structure. For example, one section of the injection layer is part of the injection structure, and one section of the injection layer arranged laterally alongside it is part of the mirror structure. The injection layer is formed, for example, in a partial shape, that is, it is not composed of multiple partial layers.

[0022] According to at least one embodiment, the injection layer is generally permeable to radiation generated by a semiconductor component, e.g., primary radiation. For example, the transmittance for radiation entering the injection layer from a semiconductor layer sequence through a first side and passing through the injection layer is at least 50%, or at least 60%, or at least 75%, or at least 85%. The injection layer may be arranged on the entire surface of the first side of the semiconductor layer sequence.

[0023] According to at least one embodiment, the injection layer extends in a connected manner not only across the region of the injection structure but also across the region of the mirror structure. That is, the injection layer is not interrupted between the injection structure and the mirror structure. For example, the injection layer is formed in a connected manner or simply connectedly across its entire lateral extension.

[0024] According to at least one embodiment, the injection layer comprises or is composed of a transparent conductive oxide (TCO). The transparent conductive oxide may be indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped tin oxide, or SrNbO3 or ZnMgBeO.

[0025] The injection layer has, for example, a thickness of up to 10 nm or up to 5 nm and / or at least 0.5 nm or at least 1 nm, for example, an average thickness or a minimum thickness or a maximum thickness.

[0026] According to at least one embodiment, the mirror structure comprises a Bragg mirror. The mirror structure may comprise a plurality of layers having different refractive indices, for example, alternately arranged layers having a higher refractive index and a lower refractive index. For example, the mirror structure comprises at least four or at least ten layers.

[0027] An injection layer is arranged, for example, between a first side of a semiconductor layer sequence and a Bragg mirror. For example, the injection layer is in direct contact with the Bragg mirror. A layer of the Bragg mirror adjacent to the injection layer has a different refractive index from, for example, the injection layer. For example, a layer of the Bragg mirror having a lower refractive index than the injection layer is adjacent to the injection layer. Alternatively, a layer of the Bragg mirror adjacent to the injection layer may have a higher refractive index than the injection layer. This may be desirable for good adhesion between the Bragg mirror and the injection layer.

[0028] Layers of the Bragg mirror having a lower refractive index may include or be composed of SiO2, MgF2, and AlF3. Layers of the Bragg mirror having a higher refractive index may include or be composed of YDH and HfO2.

[0029] According to at least one embodiment, the mirror structure includes a dielectric mirror. The dielectric mirror may be a Bragg mirror. The dielectric mirror includes one or more dielectric layers. The injection layer may be in direct contact with the dielectric layer of the dielectric mirror.

[0030] According to at least one embodiment, the injection structure comprises a metal. The injection layer may be arranged between a first side of the semiconductor layer sequence and the metal of the injection structure. For example, the injection layer is in direct contact with the metal of the injection structure. The metal may be Al, Cr, Ag, Au, Pt, or another metal.

[0031] Al has a high reflectance of about 90% for UV radiation. However, the injection characteristics of this metal are not good in semiconductor materials such as p-AlInGaN. An injection layer between Al and the semiconductor material, for example made of ITO, improves the injection characteristics, but reduces reflectance because, on the one hand, ITO has a relatively high absorption rate, particularly for UV radiation, and on the other hand, radiation is partially converted into surface plasmons at the interface between Al and ITO. According to the present invention, reflectance can be increased again by using a special mirror structure in conjunction with the injection structure.

[0032] According to at least one embodiment, the injection structure comprises a first metal and a second metal. The second metal is arranged, for example, between a first side of a semiconductor layer sequence and the first metal. The second metal may be arranged within an area of ​​the injection structure between the injection layer and the first metal. For example, the second metal is in direct contact with the injection layer and / or the first metal.

[0033] According to at least one embodiment, the first metal has a higher reflectance than the second metal for radiation generated within the semiconductor component, particularly primary radiation. The reflectance is, for example, at least 5% or at least 10% or at least 50%.

[0034] According to at least one embodiment, the second metal forms a metal oxide less readily than the first metal upon contact with a transparent conductive oxide, particularly with the transparent conductive oxide of the injection layer. In particular, the second metal reacts chemically less strongly with the injection layer than the first metal. The first metal is, for example, aluminum, indium, or palladium. For example, if the first metal is aluminum, the second metal may be chromium, indium, or palladium.

[0035] Since metal oxides can be another cause of radiation absorption, it may be desirable to prevent their formation.

[0036] According to at least one embodiment, the semiconductor component comprises a plurality of injection structures and / or mirror structures in a first aspect. All features disclosed so far and disclosed below for an injection structure are also disclosed for all other injection structures. Likewise, all features disclosed so far and disclosed below for a mirror structure are also disclosed for all other mirror structures.

[0037] For example, on a first side of a semiconductor layer sequence, a connected mirror structure is formed that is penetrated by a plurality of injection structures. The plurality of injection structures penetrate the mirror structure in, for example, a regular pattern, for example, a rectangular pattern or a hexagonal pattern. The injection structures may be electrically connected to each other, for example, through a connected metal layer, on the side of the mirror structure opposite the semiconductor layer sequence.

[0038] Alternatively, the injection structure can also be a connected type and can be penetrated by multiple mirror structures.

[0039] According to at least one embodiment, the semiconductor layer sequence includes a depression within an area of ​​the injection structure, and the injection structure protrudes into the depression. The depression extends particularly in the direction of the active layer. The width of the depression measured laterally may decrease in the direction of the active layer. In a cross-sectional view, the depression is formed, for example, in a V-shape. The injection structure is electrically in contact with the semiconductor layer sequence, for example, along the entire depression, particularly within the bottom region of the depression.

[0040] Through the depression and the injection structure located therein, the injection surface for charge carriers can be injected and expanded.

[0041] For example, no depressions are provided within the mirror structure region. Within the mirror structure region, the thickness of the semiconductor layer sequence, for example, the average thickness or minimum thickness, may be greater than the thickness within the injection region (for example, the average thickness or minimum thickness), for example, at least 10% or at least 50% greater. Within the mirror structure region, the average gap or minimum gap between the first side and the active layer is, for example, at least 300 nm or at least 400 nm and / or up to 1000 nm or up to 600 nm. Within the injection structure region, the average gap or minimum gap may be up to 100 nm or up to 50 nm and / or at least 20 nm.

[0042] According to at least one embodiment, the depression does not pass through the active layer. The active layer can be formed, for example, simply in a connected manner.

[0043] According to at least one embodiment, the semiconductor layer sequence is based on AlInGaN. The Al content within the semiconductor layer sequence, or at least in the first aspect, is, for example, at least 40% or at least 45%. That is, this is Al where n ≥ 0.4 or n ≥ 0.45. n In 1-n-m Ga m It is N. The In content is, for example, up to 1% or up to 0.1%.

[0044] According to at least one embodiment, the primary radiation and / or radiation to be reflected by the mirror structure is radiation in the ultraviolet region. For example, the maximum intensity of the primary radiation is in the ultraviolet region, for example, in the region of 100 nm to 280 nm.

[0045] According to at least one embodiment, the semiconductor layer sequence is p-type in a first aspect. In particular, the layer of the semiconductor layer sequence forming the first aspect is p-type. For example, the semiconductor layer sequence is doped with Mg in the first aspect. Throughout the injection structure, during the intended operation of the semiconductor component, for example, holes are injected into the semiconductor layer sequence. The entire region of the semiconductor layer sequence between the active layer and the first aspect may be p-type.

[0046] According to at least one embodiment, a second side of the semiconductor layer sequence opposite the first side forms the main emission side of the semiconductor layer sequence. For example, the second side is the side where at least 75% or at least 90% of the radiation generated within the semiconductor layer sequence is finally extracted from the semiconductor layer sequence. That is, this radiation subsequently leaves the semiconductor component without passing through the semiconductor layer sequence again. On the other hand, for example, at least 75% or at least 90% or at least 95% of the radiation extracted from the semiconductor layer sequence across the first side may be reflected back into the semiconductor layer sequence.

[0047] The second side may be structured to increase the extraction probability. For example, structures within the second side are etched, or a semiconductor layer sequence is grown on a structured substrate, such as a PSS [Patterned Sapphire Substrate]. In particular, this may be a nano-PSS having a structure size in the nanometer range or up to tens of nanometers. In this case, the second side is a side adjacent to the substrate and reshapes the structures of the substrate.

[0048] The optoelectronic semiconductor components described herein may be used in medical devices, cleaning services, facility management, water and food suppliers, etc. For example, semiconductor components may be used for the sterilization of objects through UV irradiation. Semiconductor components may be used within sterilization devices. Semiconductor components may, for example, achieve more reliable sterilization or shorter sterilization periods for target materials.

[0049] The optoelectronic semiconductor components described herein are further described in detail below by reference to the drawings. In this case, the same reference numerals indicate elements that are identical, of the same type, or function identically within the individual drawings. However, references to scale are not provided, and individual elements, particularly layer thicknesses, may be exaggerated for illustrative and / or comprehensible purposes. Where elements correspond in function across the various drawings, their description is not repeated for each of the drawings below. For clarity, reference numerals corresponding to elements may not be provided in all drawings. Brief explanation of the drawing

[0050] FIGS. 1 and FIGS. 2 are cross-sectional views illustrating embodiments of optoelectronic semiconductor components. Figure 3 is another cross-sectional view illustrating the semiconductor component of Figure 2. Figure 4 is a diagram showing the measured transmittance of ITO layers. FIGS. 5 and 6 are cross-sectional views illustrating other embodiments of optoelectronic semiconductor components. Specific details for implementing the invention

[0051] FIG. 1 illustrates a cross-sectional view of a first embodiment of an optoelectronic semiconductor component (100), particularly an optoelectronic semiconductor chip. The semiconductor component (100) comprises a semiconductor layer sequence (1) having a p-type layer (12), an n-type layer (13), and an active layer (10) between the p-type layer (12) and the n-type layer (13). The semiconductor layer sequence (1) is limited by two opposing sides (11, 14). The first side (11) is formed through the p-type layer (12), and the second side (14) is formed through the n-type layer (13). For example, the semiconductor layer sequence (1) is based on AlInGaN. When operating as intended, the active layer (10) emits primary radiation having a maximum intensity, for example, within the ultraviolet region, for example, from 100 nm to 280 nm.

[0052] The second side (14) is a primary emission side, and through this primary emission side, when the semiconductor component (100) operates as intended, most of the radiation extracted from the semiconductor layer sequence (1), for example, at least 75%, is finally extracted without subsequently being reflected back into the semiconductor layer sequence (1). In particular, the radiation extracted through the second side (14) is subsequently extracted from the semiconductor component (100).

[0053] On the other hand, most of the radiation extracted from the semiconductor layer sequence (1) through the first side (11), for example, at least 75% or at least 90%, is reflected back into the semiconductor layer sequence (1). The structures used for this purpose are described further below.

[0054] The n-type layer (13) is electrically contacted by a contact structure (6) extending from the side opposite the second side (14) of the semiconductor component (100) to the second layer (14) over the entire thickness of the semiconductor layer sequence (1). The contact structure (6) may be formed as a conductive connection through the semiconductor layer sequence (1) that is completely surrounded laterally by the semiconductor layer sequence (1), or may be arranged sideways in parallel with the semiconductor layer sequence (1). The contact structure (6) is electrically insulated from the active layer (10) and the p-type layer (12) through an insulating layer (5).

[0055] The p-type layer (12) is electrically contacted using injection structures (2) arranged on the first side (11). The injection structures (2) are electrically connected to the p-type layer (12). Within the area of ​​the injection structures (2), recesses or depressions extending in a V-shape in the illustrated cross-sectional view are introduced into the semiconductor layer sequence (1). The injection structures (2) comprise a first metal (21), for example, aluminum.

[0056] An injection layer (4) made of a TCO, such as ITO, is provided on the first side (11) of the semiconductor layer sequence (1) and within the direct contact portion with the p-type layer (12). The injection layer (4) extends in a connected manner over a plurality of injection structures (2) and within the region between the injection structures (2), for example, over the entire first side (11). The injection layer (4) has a thickness of, for example, 2 nm.

[0057] A mirror structure (3) is arranged on a first side (11) in a lateral or side-by-side manner with the injection structures (2). The mirror structure (3) comprises a Bragg mirror-type dielectric mirror (30) having a plurality of dielectric layers (31, 32) of different refractive indices. The dielectric mirror (30) is in direct contact with the injection layer (4). In this case, the layer of the dielectric mirror (30) in contact with the injection layer (4) is, for example, a layer having a low refractive index, for example, an MgF2 layer. The next layer having a higher refractive index is, for example, an HfO2 layer.

[0058] The mirror structure (3) includes a portion of the injection layer (4), just like the injection structures (2). For example, through the use of a Bragg mirror (30) within the region of the mirror structure (3), at least 90% reflectance is achieved for radiation generated within the semiconductor layer sequence (1), particularly primary radiation.

[0059] In the regions of the injection structures (2), the reflectivity is lower, and instead, these regions are configured for efficient charge carrier injection. However, through the injection layer (4) formed in a connected manner, some of the charge carriers are also injected within the regions of the mirror structures (3).

[0060] FIG. 2 illustrates a second embodiment of a semiconductor component (100) in cross-sectional view. In contrast to the first embodiment, the injection structures (2) here include a first metal (21) and a second metal (22) arranged between the first metal (21) and the injection layer (4). The second metal is in direct contact, for example, with the first metal (21) as well as with the injection layer (4). In particular, the second metal (22) is arranged within the region of the depressions of the semiconductor layer sequence (1). The second metal (22) is, for example, chromium, palladium, or indium. While chromium, palladium, or indium is less susceptible to oxidation than aluminum when in contact with the ITO of the injection layer (4), aluminum, i.e., the first metal (21), has a higher reflectivity to primary radiation. In particular, oxygen from the ITO can be a cause of oxidation.

[0061] FIG. 3 illustrates the semiconductor component (100) of FIG. 2 as a plan view on the cross-sectional plane (AA') of FIG. 2. FIG. 2 is again a plan view on the cross-sectional plane (BB') of FIG. 3.

[0062] As can be seen in FIG. 3, the mirror structure (3) is actually a single mirror structure (3), and this single mirror structure is formed in a connected manner and penetrated by a plurality of injection structures (2). In this case, the injection structures (2) are arranged in a regular pattern, in this case, a rectangular pattern.

[0063] FIG. 4 illustrates the transmittance (%) of an injection layer made of ITO, such as that used in the embodiments above. Transmittance is expressed as a function of the wavelength of the incident radiation. Different curves represent measurements for various thicknesses of the injection layer. Curve (K1) shows the results for a layer having a thickness of 200 nm. As can be seen, the transmittance for ultraviolet radiation is very low. On the other hand, an ITO layer with a thickness of only 2 nm has a much higher transmittance for ultraviolet radiation [see curve (K2)]. The inventors have confirmed that a thin ITO layer with a thickness of only 2 nm can be used for charge carrier injection in the embodiments described above by having sufficient conductivity. The relatively high transmittance of this thin ITO layer allows for efficient reflection of radiation emitted from the semiconductor layer sequence (1) through the first side.

[0064] The embodiment of FIG. 5 differs from the embodiment of FIG. 2 in that the second aspect (14) is structured, for example, to increase the probability of extraction through an etching process. For the etching process, KOH may be used as an etchant. The etching process is performed, for example, after the separation of the growth substrate.

[0065] In the embodiment of FIG. 6, the semiconductor layer sequence (1) is arranged on a structured substrate (7). The substrate (7) may be a growth substrate for the semiconductor layer sequence (1), for example, a so-called PSS or nano-PSS. In the second aspect (14), the extraction probability may likewise be increased by reshaping the structures of the substrate (7).

[0066] This patent application claims priority to German patent application No. 102021129107.0, the disclosure of which is incorporated into this patent application by reference.

[0067] The present invention is not limited to the embodiments described by the embodiments. Rather, the present invention includes each novel feature and each combination of features, particularly each combination of features within the claims, even if such features or such combinations are not explicitly stated within the claims or embodiments. Explanation of the symbols

[0068] 1 Semiconductor layer sequence 2 Injection Structure 3 mirror structure 4 injection layers 5 insulation layers 6 contact structures 7 substrates 10 active layers 11 First side 12 p-type layers 13 n-type layer 14 Second side 21 First metal 22 Second metal 30 Bragg mirror / Genomic mirror 31 mirror layer 32 mirror layer 100 Optoelectronic Semiconductor Components K1 curve K2 curve

Claims

Claim 1 As a photoelectronic semiconductor component (100), such a photoelectronic semiconductor component is, A semiconductor layer sequence (1) having an active layer (10) for generating primary radiation; At least one injection structure (2) on a first side (11) of a semiconductor layer sequence (1) for injecting charge carriers into the semiconductor layer sequence (1); It includes at least one mirror structure (3) on the first side (11) of the semiconductor layer sequence (1) and parallel to the injection structure (2) for reflecting radiation generated within the semiconductor component (100), and The mirror structure (3) has a higher reflectivity than the injection structure (2) for radiation generated within the semiconductor component (100), In the first side (11), an injection layer (4) for injecting charge carriers into the semiconductor layer sequence (1) is arranged so as to be in direct contact with the semiconductor layer sequence (1), and The injection layer (4) is generally transparent to radiation generated within the semiconductor component (100), and The injection layer (4) includes a transparent conductive oxide, and The injection structure (2) includes a first metal (21) and a second metal (22) between the first side (11) of the semiconductor layer sequence (1) and the first metal (21). The first metal (21) has a higher reflectivity than the second metal (22) for radiation generated within the semiconductor component, and The second metal (22) forms a metal oxide less easily than the first metal (21) when in contact with a transparent conductive oxide, and A semiconductor layer sequence (1) includes a recess within an area of ​​an injection structure (2), and an injection structure (2) protrudes into the recess, the photoelectronic semiconductor component (100). Claim 2 In paragraph 1, The semiconductor layer sequence (1) is based on AlInGaN, and The semiconductor layer sequence (1) is p-type in the first side (11), and A photoelectronic semiconductor component (100) in which the primary radiation is within the ultraviolet region and has a maximum intensity of 100 nm to 280 nm. Claim 3 In paragraph 1 or 2, The injection layer (4) extends in a connected manner not only across the region of the injection structure (2) but also across the region of the mirror structure (3), the optoelectronic semiconductor component (100). Claim 4 In paragraph 1 or 2, The mirror structure (3) is an optoelectronic semiconductor component (100) including a Bragg mirror (30). Claim 5 In paragraph 1 or 2, The mirror structure (3) is an optoelectronic semiconductor component (100) including a dielectric mirror. Claim 6 In paragraph 1 or 2, The injection structure (2) is a photoelectronic semiconductor component (100) containing metal. Claim 7 In paragraph 1 or 2, A photoelectronic semiconductor component (100) comprising a plurality of injection structures (2) and / or mirror structures (3) on a first side (11). Claim 8 In paragraph 1 or 2, A photoelectronic semiconductor component (100) in which the recess does not pass through the active layer (10). Claim 9 In paragraph 1 or 2, The semiconductor layer sequence (1) is an optoelectronic semiconductor component (100) based on AlInGaN. Claim 10 In paragraph 1 or 2, The primary radiation is a photoelectronic semiconductor component (100) located within the ultraviolet region. Claim 11 In Paragraph 10, The primary radiation has a maximum intensity of 100 nm to 280 nm, and the optoelectronic semiconductor component (100). Claim 12 In paragraph 1 or 2, The semiconductor layer sequence (1) is a photoelectronic semiconductor component (100) that is p-type in the first side (11). Claim 13 In paragraph 1 or 2, A photoelectronic semiconductor component (100) in which the second side (14) of the semiconductor layer sequence (1) opposite the first side (11) forms the main emission side of the semiconductor layer sequence (1). Claim 14 In paragraph 1 or 2, An optoelectronic semiconductor component (100) having a thickness of up to 5 nm of an injection layer (4). Claim 15 delete Claim 16 delete

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