Chemical Vapor Deposition Method of depositing Amorphous iridium oxide on neural probe provided on a Flexible Printed Circuit Board(FPCB) using ozone gas

Abstract

The present invention relates to a chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, comprising: a step S100 in which an iridium precursor is injected into a reaction chamber (furnace) in which a substrate having a neural probe is disposed inside, and the inside of the reaction chamber is purged with an inert gas for a predetermined time; and a step S200 in which ozone gas and an inert gas are injected into the inside of the reaction chamber, and the ozone (O3) gas and the iridium precursor are reacted at a predetermined reaction temperature to deposit iridium oxide (IrO2) on the surface of the neural probe.

Description

Technology Field

[0001] The present invention relates to a chemical vapor deposition method for depositing iridium oxide. Specifically, it relates to a chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas. Background Technology

[0002] Pseudocapacitance represents the capacitance value of a capacitor capable of storing energy as an electrode, and is a very important factor in the electrochemical resistance value in alternating current. When the pseudocapacitance value is large, the electrochemical resistance value decreases, and this characteristic is very advantageous for stimulating nerves with a neural probe.

[0003] Iridium oxide is widely used as an electrode for actual electrochemical catalysts due to its large pseudo-capacitance value.

[0004] Conventional technology includes Chemical Vapor Deposition (CVD), which involves reacting an iridium precursor with oxygen in a temperature range of 350 to 550°C to deposit the material.

[0005] However, conventional chemical vapor deposition (CVD) methods have the following problems.

[0006] First, there is a problem in that reacting an iridium precursor with oxygen in a temperature range of 350 to 550°C does not optimize deposition in chemical vapor deposition, but is merely a method for producing iridium oxide.

[0007] Second, the reaction temperature range of 350 to 550°C overlaps with the melting point (247 to 395°C) of polyimide (PI), a polymer material generally used in flexible circuit boards (FPCBs) for neural probes, so there is a problem that the substrate may expand or melt within the reaction temperature range. Prior art literature

[0008] (Reference 1) Korean Published Patent Application No. 10-2004-0067804 (July 30, 2004) The problem to be solved

[0009] The chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas according to the present invention has the following problem to be solved.

[0010] First, we aim to lower the deposition reaction temperature of amorphous iridium oxide through the reaction of an iridium precursor with ozone.

[0011] Second, ensure that the melting point of the flexible circuit board does not fall within the reaction temperature range.

[0012] Third, we aim to increase deposition efficiency by presenting deposition conditions in detail.

[0013] The problems solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0014] The present invention relates to a chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, comprising: a step S100 in which an iridium precursor is injected into a reaction chamber (furnace) in which a substrate having a neural probe is disposed inside, and the inside of the reaction chamber is purged with an inert gas for a predetermined time; and a step S200 in which ozone gas and an inert gas are injected into the inside of the reaction chamber, and the ozone (O3) gas and the iridium precursor are reacted at a predetermined reaction temperature to deposit iridium oxide (IrO2) on the surface of the neural probe.

[0015] In the present invention, at step S100, the substrate may be a flexible printed circuit board.

[0016] In the present invention, the flexible circuit board may be a polymer substrate.

[0017] In the present invention, the polymer substrate may be provided with polyimide (PI).

[0018] In the present invention, at step S200, the flow rate of the injected inert gas can be 100 to 500 sccm.

[0019] In the present invention, at step S200, the amount of ozone gas injected can be 1 to 10 times the amount of iridium precursor injected.

[0020] In the present invention, at step S200, the reaction temperature range of the reaction chamber can be 160 to 185℃.

[0021] In the present invention, in step S200, the temperature rise rate of the reaction chamber can be 1 to 10℃ / min.

[0022] In the present invention, after step S200, it is possible to further provide step S300, in which an inert gas is injected into the reaction chamber to remove residual ozone and the substrate on which iridium oxide is deposited on the neural probe is cleaned.

[0023] In the present invention, after step S300, it is possible to further provide step S400, which measures the change in impedance according to the change in frequency in order to verify the electrochemical properties of the iridium oxide deposited on the surface of the neural probe.

[0024] In the present invention, at step S400, if the impedance change measurement result measures an impedance value smaller than 1 / 10 of the initial impedance, it is possible to determine that it is suitable.

[0026] The present invention relates to a flexible circuit board having a neural probe on which iridium oxide is deposited, wherein iridium oxide can be deposited on the surface of the neural probe of a substrate having a neural probe disposed inside a reaction chamber according to a chemical vapor deposition method for depositing iridium oxide using ozone gas according to the present invention.

[0027] In the present invention, the flexible circuit board may be provided as a polymer substrate and may be made of polyimide (PI).

[0028] In the present invention, the flow rate of the injected inert gas can be 100 to 500 sccm.

[0029] In the present invention, the amount of ozone gas injected can be 1 to 10 times the amount of iridium precursor injected.

[0030] In the present invention, the reaction temperature range of the reaction chamber can be 160 to 185°C.

[0031] In the present invention, the temperature rise rate of the reaction chamber can be 1 to 10℃ / min. Effects of the invention

[0032] A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas according to the present invention has the following effects.

[0033] First, the reaction of the iridium precursor with ozone instead of oxygen has the effect of reducing the deposition reaction temperature of amorphous iridium oxide.

[0034] Second, a reaction temperature range is provided below the melting point of the flexible circuit board, so that expansion or melting of the flexible circuit board does not occur, thereby enabling nerve stimulation without functional damage.

[0035] Third, deposition conditions such as the amount of injected inert gas, the hourly temperature change rate of the reaction chamber, and the ratio of iridium precursor to ozone are presented in detail, which has the effect of increasing deposition efficiency.

[0036] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description below. Brief explanation of the drawing

[0037] FIG. 1 shows a flowchart in which steps S100 and S200 are provided as essential elements in a chemical vapor deposition method for depositing iridium oxide according to the present invention. Figure 2 shows that step S300 has been added to the flowchart of Figure 1. Figure 3 shows that step S400 has been added to the flowchart of Figure 2. Figure 4 shows a schematic diagram of an iridium oxide deposition method. Figure 5 shows optical and electron microscope images of the deposited iridium oxide. Figure 6 shows the iridium oxide material analysis data. Figure 7 shows a graph representing the change in impedance value before iridium oxide deposition. Figure 8 shows a graph representing the change in impedance value after iridium oxide deposition. Figure 9 shows a graph representing the impedance values ​​after depositing iridium oxide according to temperature based on 1 kHz. Specific details for implementing the invention

[0038] Hereinafter, embodiments of the present invention are described with reference to the attached drawings so that those skilled in the art can easily implement the present invention. As will be easily understood by those skilled in the art, the embodiments described below may be modified in various forms without departing from the concept and scope of the present invention. Where possible, identical or similar parts are indicated using the same reference numerals in the drawings.

[0039] The technical terms used in this specification are intended merely to refer to specific embodiments and are not intended to limit the invention. The singular forms used herein include plural forms unless phrases clearly indicate otherwise.

[0040] As used in this specification, the meaning of “comprising” specifies certain characteristics, regions, integers, steps, actions, elements, and / or components, and does not exclude the existence or addition of other specific characteristics, regions, integers, steps, actions, elements, components, and / or groups.

[0041] All terms used in this specification, including technical and scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms defined in advance are further interpreted to have meanings consistent with relevant technical literature and the present disclosure, and are not interpreted in an ideal or highly formal sense unless otherwise defined.

[0042] Expressions regarding direction used in this specification, for example, expressions of front / back / left / right, expressions of up / down, and expressions of longitudinal / transverse directions, may be interpreted by referring to the directions disclosed in the drawings.

[0044] The present invention relates to a method for depositing iridium oxide (IrO2) so that it can be applied to flexible printed circuit boards (FPCBs) using polymer substrates rather than silicon substrates.

[0045] The iridium oxide deposition method proposed in the present invention is a method of reacting oxygen and an iridium precursor at a high temperature as previously known, but by using ozone (O3) instead of oxygen (O2) to lower the reaction temperature, it is possible to deposit it even on FPCBs using polymer substrates.

[0046] Deposited iridium oxide can significantly reduce the impedance of a neural probe mounted on a flexible circuit board, and this property is very important for stimulation electrodes.

[0047] Therefore, the present invention can be utilized in the fabrication of stimulation electrodes that can be used in actual biomedical devices.

[0049] In the case of the inert gas according to the present invention, any substance that performs the role of removing substances capable of causing additional reactions, such as oxygen and moisture contained in the atmosphere, is acceptable. For example, experiments conducted with nitrogen gas as well as argon gas confirmed that deposition was performed without any problems.

[0050] The general role of the inert gas is to suppress additional reactions that may occur at high temperatures rather than at room temperature, and this role is included in all of the S100, S200, and S300 steps according to the present invention.

[0051] Specifically, steps S100 and S300 play a role in increasing the temperature and suppressing additional reactions to lower the increased temperature. However, in the case of step S200, in addition to suppressing additional reactions, it also plays a role in ensuring even deposition by uniformly diffusing the vaporized iridium precursor through flow rate control.

[0054] The present invention will be described below with reference to the drawings. For reference, the drawings may be partially exaggerated to illustrate the features of the present invention. In such cases, it is preferable to interpret them in light of the entire intent of this specification.

[0056] FIG. 1 shows a flowchart in which steps S100 and S200 are provided as essential elements in a chemical vapor deposition method for depositing iridium oxide according to the present invention.

[0058] The present invention relates to a chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, comprising: a step S100 in which an iridium precursor is injected into a reaction chamber (furnace) in which a substrate having a neural probe is disposed inside, and the inside of the reaction chamber is purged with an inert gas for a predetermined time; and a step S200 in which ozone gas and an inert gas are injected into the inside of the reaction chamber, and the ozone (O3) gas and the iridium precursor are reacted at a predetermined reaction temperature to deposit iridium oxide (IrO2) on the surface of the neural probe.

[0061] Hereinafter, step S100 according to the present invention will be described.

[0062] Step S100 according to the present invention involves injecting an iridium precursor into a reaction chamber (furnace) in which a substrate having a neural probe is disposed inside, and purging the inside of the reaction chamber with an inert gas for a preset time.

[0064] In step S100, it is preferable that the substrate be a flexible printed circuit board.

[0065] The flexible circuit board according to the present invention is preferably a polymer substrate, and the polymer substrate is more preferably made of polyimide (PI). However, it is not limited to a specific material.

[0067] Meanwhile, as an example of the preparation process for step S100, a neural probe of a flexible circuit board on which iridium oxide is to be deposited may be washed with distilled water, acetone, ethanol, etc., and then at least 10 mg of an iridium precursor labeled Ir(acac)3 may be prepared, and the neural probe may be positioned in the direction in which gas is injected.

[0068] After inserting the prepared material into a reaction chamber (tube furnace), both ends can be sealed. After sealing, it is desirable to purge the inside of the reaction chamber for a predetermined time (at least 5 minutes) using an inert gas such as argon.

[0071] Hereinafter, the S200 step according to the present invention will be described.

[0072] Step S200 according to the present invention involves injecting ozone gas and an inert gas into a reaction chamber and reacting the ozone (O3) gas with an iridium precursor at a preset reaction temperature to deposit iridium oxide (IrO2) on the surface of the neural probe.

[0074] Step S200 is a step for controlling various conditions, such as the injection flow rate of inert gas, the rate of increase of the internal temperature of the reaction chamber, the flow rate of ozone relative to the precursor, and the reaction temperature of the reaction chamber, in order to deposit iridium oxide in earnest.

[0076] In step S200, the flow rate of the injected inert gas is preferably 100 to 500 sccm. This is to prevent rapid spreading as the temperature of the iridium precursor rises after purging with the inert gas.

[0077] If the injection flow rate is less than 100 sccm, it is difficult for the iridium precursor to vaporize and diffuse sufficiently, which hinders deposition and results in the formation of iridium oxide at the injection site. If the injection flow rate exceeds 500 sccm, the iridium precursor diffuses too rapidly, which may cause the material to be deposited outside the reaction chamber rather than on the surface of the neural probe. In other words, if the injection flow rate exceeds the specified range, problems may arise where the material is not deposited at all or is deposited in an unintended location. Therefore, it is desirable for the flow rate of the injected inert gas to be between 100 and 500 sccm.

[0080] In step S200, it is preferable that the amount of ozone gas injected be 1 to 10 times the amount of iridium precursor injected.

[0081] If the amount of ozone is less than 1 time, the deposition time is long, and if it exceeds 10 times, the amount of ozone is too high, causing problems in that deposition is not easy. Therefore, it is desirable to inject it at a level of 1 to 10 times.

[0084] In step S200, the reaction temperature range of the reaction chamber is preferably 160 to 185℃.

[0085] The main technical feature of the present invention is controlling the deposition temperature of iridium oxide to enable the use of a chemical vapor deposition (CVD) method for neural probes of a flexible circuit board using a polymer substrate.

[0086] First, the upper limit of the reaction temperature can be set to 185°C. If the melting point of the polymer used as a substrate or the temperature at which the properties of the polymer begin to change is lower than the upper limit of the reaction temperature, the desired electrical properties will not be realized.

[0087] Accordingly, considering the melting point range (247–395°C) of polyimide (PI), a commonly used polymer, if the upper limit of the reaction temperature is controlled to 185°C, iridium oxide with excellent electrical properties can be easily deposited at a temperature below that without damaging the substrate.

[0088] Next, the lower limit of the reaction temperature can be set to 160°C. A high temperature is required to deposit crystalline iridium oxide with excellent electrical properties by reacting an iridium precursor with ozone. When the reaction temperature is lowered, there is a problem in that the crystallinity of the iridium oxide decreases, and the electrical properties tend to gradually decrease.

[0089] However, it was confirmed that even when the reaction temperature lower limit was lowered to 160°C, iridium oxide was deposited, albeit in an amorphous form, and that the required electrical properties were maintained in the amorphous iridium oxide.

[0090] Accordingly, in the present invention, the reaction temperature of the reaction chamber is set to 160 to 185°C and maintained for a certain period of time (e.g., for at least 10 minutes) to carry out the reaction.

[0093] In step S200, it is preferable that the temperature rise rate of the reaction chamber be 1 to 10℃ / min. This is because if the internal temperature of the reaction chamber is changed too rapidly, the reaction occurs with only the surface temperature of the iridium precursor rising, making it impossible to control the deposition thickness and the reaction.

[0094] When the temperature rise rate is less than 1℃ / min, there are no particular problems with the reaction, but since the reaction time is very long, a rate of 1℃ / min or more is suggested. When the temperature rise rate exceeds 10℃ / min, the internal temperature of the reaction chamber is recognized as sufficient for the reaction; however, because the iridium precursor that actually needs to react inside the reaction chamber does not have enough time to receive sufficient heat, the reaction is insufficiently performed, resulting in a problem where deposition is not properly carried out. Therefore, it is desirable for the temperature rise rate of the reaction chamber to be 1 to 10℃ / min.

[0097] Hereinafter, the S300 step according to the present invention will be described.

[0098] Step S300 according to the present invention, after Step S200, can remove residual ozone by injecting an inert gas into the reaction chamber and clean the substrate on which iridium oxide is deposited on the neural probe.

[0099] As one example, since ozone gas or unreacted iridium precursors may be physically adsorbed on the deposited iridium oxide, after the reaction is finished, argon gas may be sufficiently flowed to remove carcinogenic ozone, etc., and the surface may be washed with water, ethanol, etc.

[0100] Furthermore, it is also possible to cool the substrate at room temperature (about 20 to 30°C).

[0103] Hereinafter, the S400 step according to the present invention will be described.

[0104] In the S400 step according to the present invention, after the S300 step, the change in impedance according to the change in frequency can be measured to verify the electrochemical properties of the iridium oxide deposited on the surface of the neural probe.

[0105] In step S400, if the impedance change measurement result shows an impedance value smaller than 1 / 10 of the initial impedance, it may be judged as suitable.

[0107] Step S300 is a step to verify whether iridium oxide has formed and its electrochemical properties. After the reaction is complete, the formation of iridium oxide can also be checked using an optical microscope. Iridium oxide has a blue color, and if the electrode exhibits this color when observed through an optical microscope, it can be confirmed that it has been successfully deposited.

[0108] If the reaction temperature range according to the present invention is exceeded, such a change in color cannot be observed through an optical microscope, so it can be determined that the deposition was not properly performed.

[0109] In addition, to verify the electrochemical properties of the deposited iridium oxide, the change in impedance according to frequency changes between approximately 100 and 10,000 Hz can be measured using equipment capable of Electrochemical Impedance Spectroscopy (EIS) analysis.

[0110] If the measurement results show that the impedance value is about 1 / 10 times smaller than the initial impedance, it can be judged to be 'suitable' as it indicates that the deposition was made while maintaining good electrochemical properties.

[0113] Below, the technical features of the present invention are further explained through drawings and data.

[0114] Figure 4 shows a schematic diagram of an iridium oxide deposition method. Figure 4 is a schematic diagram explaining the method of iridium oxide deposition, illustrating the sequence of reactions between Ir(acac)3 and ozone and the structure formed.

[0116] As described above, iridium oxide can be deposited on a neural probe of a flexible circuit board (FPCB) by going through each step according to the present invention.

[0117] In the case of the present invention, not only can a neural probe of any flexible circuit board be deposited in a time of, for example, about 60 minutes, but the amount of iridium precursor for deposition, the rate of increase in temperature of the reaction chamber, and the amount of ozone generated are also optimized.

[0118] This optimization is highly efficient for commercializing and mass-producing the present invention.

[0119] In the present invention, data can also be presented to verify whether the iridium oxide is properly coated and whether the impedance of the electrode is properly reduced due to the high pseudo-capacitance of the iridium oxide, even through a modified method using ozone gas instead of oxygen gas.

[0121] Figure 5 shows optical and electron microscope images of the deposited iridium oxide. Figure 5 is an optical microscope (OM) and scanning electron microscope (SEM) image confirming nanoparticles on the electrode when deposited by the method according to the present invention. A blue color can be observed on the electrode under an optical microscope, and the presence of nanoparticles on the surface can be confirmed through an electron microscope. If a blue color is not observed on the surface through an optical microscope, it can be determined that the deposition was not properly performed. When observed with an electron microscope, nanoparticles with a size of 50 to 300 nm can be observed.

[0123] Figure 6 shows iridium oxide material analysis data. As material analysis data of nanoparticles obtained through the deposition method according to the present invention, the crystal structure was analyzed using Transmission Electron Microscopy (TEM) and the material composition was analyzed using Energy Dispersive Spectroscopy (EDS). Figure 6 is a photograph of the nanoparticles generated in Figure 5 confirmed by a higher magnification electron microscope (TEM), and through EDS mapping, it was confirmed that the particles are composed of iridium and oxygen, which proves that the synthesized material is amorphous iridium oxide.

[0125] Figure 7 shows a graph representing the change in impedance value before iridium oxide deposition. Figure 8 shows a graph representing the change in impedance value after iridium oxide deposition.

[0126] Figures 7 and 8 show Electrochemical Impedance Spectroscopy (EIS) analysis data that confirms impedance values ​​as frequency increases. As can be seen from the data, impedance tends to decrease as frequency increases. The most important value in the EIS analysis method is the impedance value at a frequency of 1 kHz. Looking at this, the sample without deposition has a resistance value of 538 KΩ (see Figure 7), but when the resistance of the electrode is measured after deposition at 175°C (see Figure 8), it is 4.99 KΩ, which is almost 1 / 100th of the original value. This is a very useful property, considering the view that a decrease of even 1 / 10th or less is considered a significant reduction in impedance.

[0128] FIG. 9 shows a graph representing impedance values ​​according to temperature based on 1 kHz. FIG. 9 is a box plot showing impedance values ​​at 160°C, 175°C, and 185°C within the reaction temperature range of 160°C to 185°C presented in the present invention.

[0129] A box plot is a graph in which data extracted within the maximum and minimum ranges is displayed in the form of a box on the side where there is a lot of data.

[0130] Explaining the graph in Fig. 9 at 160℃, the impedance values ​​measured at 1KHz are within the range of 2.5KΩ to 5.3KΩ, with an average of about 3.2KΩ (the middle line of the box plot), and accordingly, it can be seen that there are more impedance values ​​corresponding to the lower part.

[0131] Explaining the graph in Fig. 9 at 175℃, the impedance values ​​measured at 1KHz are within the range of 3.5KΩ to 5.8KΩ, with an average of about 4.72KΩ (the middle line of the box plot), and accordingly, it can be seen that there are more impedance values ​​corresponding to the upper part.

[0132] When describing the graph at 185℃, the impedance values ​​measured at 1KHz are within the range of 2.4KΩ to 4.6KΩ, with an average of about 3.62KΩ (the center line of the box plot), and accordingly, it can be seen that the impedance values ​​are evenly distributed.

[0133] Overall, the range of impedance appears to vary somewhat depending on the temperature, but due to the nature of the chemical vapor deposition method, it is not always possible to deposit uniformly, and slight differences are bound to occur with each experiment. However, looking at the impedance values, they generally range between 2 and 6 KΩ, which does not deviate significantly from the purpose of the present invention. Furthermore, since the impedance value is sufficiently low from the perspective of neural stimulation intended for future application, there is no problem at all, and the error actually falls into the category of significantly low error.

[0135] It can be seen that the average impedance at each temperature is 3.2KΩ, 4.72KΩ, and 3.62KΩ, showing slight differences, but overall, the impedance values ​​range from 2KΩ to 6KΩ.

[0136] In the case of Fig. 9, the impedance values ​​at a frequency of 1 kHz at the lowest temperature of 160°C and the highest temperature of 185°C can be seen to be not significantly different from the impedance values ​​at 175°C shown in Figs. 5 and 6.

[0137] Based on these data, it was confirmed that iridium oxide is formed effectively using this deposition method, similar to conventional deposition methods, and that the advantages in electrochemical properties were also reflected in the EIS analysis.

[0138] In addition, since the deposition method is a core property of the present invention that allows for time savings and mass production through a one-step process and is applicable even to polymer substrates because the deposition is performed at a low temperature, it can be very advantageously used in the actual application of flexible neural probes.

[0141] Meanwhile, the present invention can be implemented as a flexible circuit board having a neural probe. Specifically, the flexible circuit board having a neural probe according to the present invention may have iridium oxide deposited on its surface according to a chemical vapor deposition method in which iridium oxide is deposited using ozone gas according to the present invention.

[0143] The embodiments described in this specification and the accompanying drawings are merely illustrative of a part of the technical concept included in the present invention. Accordingly, since the embodiments disclosed in this specification are intended to explain, not limit, the technical concept of the present invention, it is obvious that the scope of the technical concept of the present invention is not limited by these embodiments. All variations and specific embodiments that can be easily deduced by a person skilled in the art within the scope of the technical concept included in the specification and drawings of the present invention should be interpreted as being included within the scope of the rights of the present invention.

Claims

Claim 1 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized by comprising: a step S100 in which an iridium precursor is injected into a reaction chamber (furnace) in which a substrate having a neural probe is disposed inside, and the inside of the reaction chamber is purged with an inert gas for a preset time; and a step S200 in which ozone gas and an inert gas are injected into the inside of the reaction chamber, and the ozone (O3) gas and the iridium precursor are reacted at a preset reaction temperature to deposit amorphous iridium oxide (IrO2) on the surface of the neural probe. Claim 2 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible printed circuit board using ozone gas, characterized in that, in step S100, the substrate is a flexible printed circuit board. Claim 3 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in claim 2, the flexible circuit board is a polymer substrate. Claim 4 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in claim 3, the polymer substrate is provided with polyimide (PI). Claim 5 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in step S200, the flow rate of the injected inert gas is 100 to 500 sccm. Claim 6 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in step S200, the amount of ozone gas injected is 1 to 10 times the amount of iridium precursor injected. Claim 7 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in step S200, the reaction temperature range of the reaction chamber is 160 to 185°C. Claim 8 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in step S200, the temperature rise rate of the reaction chamber is 1 to 10℃ / min. Claim 9 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in claim 1, after step S200, an inert gas is injected into the reaction chamber to remove residual ozone, and the substrate on which iridium oxide is deposited on the neural probe is washed. Claim 10 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in claim 9, after step S300, step S400 is further provided for measuring the change in impedance according to the change in frequency to confirm the electrochemical properties of the iridium oxide deposited on the surface of the neural probe. Claim 11 A chemical vapor deposition method for depositing amorphous iridium oxide on a neural probe provided on a flexible circuit board using ozone gas, characterized in that, in step S400, if the impedance change measurement result measures an impedance value smaller than 1 / 10 of the initial impedance, it is determined to be suitable. Claim 12 A flexible circuit board having a neural probe with iridium oxide deposited thereon, characterized in that iridium oxide is deposited on the surface of a neural probe of a substrate having a neural probe disposed inside a reaction chamber, according to a chemical vapor deposition method of depositing iridium oxide using ozone gas according to claim 1. Claim 13 A flexible circuit board having a neural probe with iridium oxide deposited thereon, characterized in that the flexible circuit board is a polymer substrate and is provided with polyimide (PI). Claim 14 A flexible circuit board having a neural probe deposited with iridium oxide, characterized in that, in claim 12, the flow rate of the injected inert gas is 100 to 500 sccm. Claim 15 A flexible circuit board having a neural probe deposited with iridium oxide, characterized in that, in claim 12, the amount of injected ozone gas is injected at a rate of 1 to 10 times the amount of injected iridium precursor. Claim 16 A flexible circuit board having a neural probe with an iridium oxide deposited thereon, characterized in that, in claim 12, the reaction temperature range of the reaction chamber is 160 to 185°C. Claim 17 A flexible circuit board having a neural probe deposited with iridium oxide, characterized in that, in claim 12, the temperature rise rate of the reaction chamber is 1 to 10℃ / min.

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