Apparatus for processing substrate

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus equipped with a diffusion means for diffusing a process gas and supplying it to a showerhead. A substrate processing apparatus according to an embodiment of the present invention comprises a process chamber providing a process processing space for processing a substrate, a diffusion unit for diffusing a process gas supplied to the process chamber, a showerhead for spraying the process gas diffused by the diffusion unit onto the substrate, and a spray nozzle provided in the diffusion unit for diffusing and spraying the process gas supplied to the process chamber, wherein the spray nozzle comprises a nozzle body providing a transport path for the process gas supplied to the process chamber, and a diffusion plate for diffusing the process gas discharged from the nozzle body.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus equipped with a diffusion means for diffusing a process gas and supplying it to a showerhead. Background Technology

[0002] To deposit a thin film on a substrate, thin film deposition methods such as Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) may be used. In the case of Chemical Vapor Deposition or Atomic Layer Deposition, a thin film can be formed by causing a chemical reaction of the process gas on the surface of the substrate. In particular, in the case of Atomic Layer Deposition, since a single layer of the process gas attached to the surface of the substrate forms the thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD) can be used to extend the process temperature range. Since PECVD and PEALD enable processing at lower temperatures compared to PECVD and PEALD, the physical properties of the thin film can be improved.

[0004] A substrate processing device for performing a process on a substrate may include a process chamber and a showerhead. The process chamber provides a space for fixing the substrate, and the showerhead can spray process gas onto the substrate.

[0005] A showerhead may include a plurality of injection holes for injecting process gas. If the process gas is supplied in a concentrated manner or dilutely through some of the plurality of injection holes, the distribution of the process gas injected through the showerhead may be formed unevenly. If the distribution of the process gas injected from the showerhead is uneven, the quality of the thin film deposited on the substrate may be reduced.

[0006] Therefore, there is a need for an invention that ensures a uniform distribution of the process gas sprayed through the showerhead. Prior art literature

[0007] delete

[65535] U.S. Patent Publication No. 9,466,468 (Oct. 11, 2016) The problem to be solved

[0008] The problem that the present invention aims to solve is to provide a substrate processing apparatus equipped with a diffusion means for diffusing process gas and supplying it to a showerhead.

[0009] The problems of the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0010] A substrate processing apparatus according to an embodiment of the present invention comprises a process chamber providing a process processing space for processing a substrate, a diffusion unit for diffusing a process gas supplied to the process chamber, a showerhead for spraying the process gas diffused by the diffusion unit onto the substrate, and a spray nozzle provided in the diffusion unit for diffusing and spraying the process gas supplied to the process chamber, wherein the spray nozzle comprises a nozzle body providing a transport path for the process gas supplied to the process chamber, and a diffusion plate for diffusing the process gas discharged from the nozzle body.

[0011] The above diffusion plate is coupled to the nozzle body or the shower head.

[0012] The above diffusion plate includes at least one injection hole through which process gas discharged from the nozzle body passes.

[0013] The above diffusion plate includes a gas incident surface where the process gas discharged from the nozzle body collides, and a gas inclined surface that is formed in a ring shape extending along the edge of the gas incident surface and inclined with respect to the gas incident surface.

[0014] The distance from the central axis of the diffusion plate to one end of the gas incidence surface is formed to be longer than the distance from one end of the gas incidence surface to the outer end of the gas inclined surface.

[0015] The above diffusion section is formed to surround the diffusion plate and includes a guide inclined surface that guides the process gas diffused from the diffusion plate toward the showerhead, and the gas inclined surface and the guide inclined surface are parallel or formed at a certain angle.

[0016] The gas inclined surface and the guide inclined surface are formed such that as the process gas diffused from the diffusion plate proceeds toward the showerhead, the gap between the gas inclined surface and the guide inclined surface increases.

[0017] The above injection nozzle includes a central injection nozzle positioned at the center of the diffusion section and peripheral injection nozzles positioned around the central injection nozzle, and the gap between the nozzle body of the central injection nozzle and the diffusion plate is formed to be larger than the gap between the nozzle body of the peripheral injection nozzle and the diffusion plate.

[0018] The above diffusion plate includes a gas slope surface inclined in the shape of a cone with respect to a reference plane.

[0019] The above diffusion section is formed to surround the diffusion plate and includes a guide inclined surface that guides the process gas diffused from the diffusion plate toward the showerhead, and the gas inclined surface and the guide inclined surface are parallel or formed at a certain angle.

[0020] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0021] According to the substrate processing apparatus of the embodiment of the present invention as described above, since a diffusion means is provided to diffuse the process gas and supply it to the showerhead, there is an advantage in that the distribution of the process gas sprayed through the showerhead is formed uniformly. Brief explanation of the drawing

[0022] FIG. 1 is a drawing showing a substrate processing apparatus according to an embodiment of the present invention. Figure 2 is a bottom view of the diffusion section. Figure 3 is a diagram showing the diffusion of process gas by the diffusion section. Figure 4 is a plan view of the injection nozzle. Figure 5 is a side cross-sectional view of the injection nozzle. Figure 6 is a diagram showing the diffusion of process gas by a spray nozzle. Figure 7 is a diagram showing that a spray nozzle is installed in the diffusion section. Figure 8 is a diagram showing that a spray nozzle is installed in the diffusion section. Figure 9 is a diagram illustrating the arrangement relationship of injection nozzles installed in the diffusion section. FIG. 10 is a drawing showing a spray nozzle equipped with a single leg. Figure 11 is a drawing showing a spray nozzle with a diffusion plate installed on a shower head. Figure 12 is a drawing showing a spray nozzle equipped with a spray hole. FIG. 13 is a drawing showing a spray nozzle according to another embodiment of the present invention. Figure 14 is a drawing showing the injection nozzle illustrated in Figure 13 installed in the diffusion section. Specific details for implementing the invention

[0023] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0024] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) may be used in a meaning that is commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0025] FIG. 1 is a drawing showing a substrate processing apparatus according to an embodiment of the present invention.

[0026] Referring to FIG. 1, a substrate processing device (10) according to an embodiment of the present invention comprises a process chamber (100), a chamber cover (200), a substrate support (300), a gas supply unit (400), an injection unit (500), a power supply unit (600), and a control unit (700).

[0027] A substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). Specifically, the substrate processing device (10) can deposit a thin film on a substrate (W) using Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD).

[0028] The process chamber (100) provides a process processing space for processing a substrate (W). To this end, the process chamber (100) may be equipped with a substrate support (300) and a spraying unit (500).

[0029] The chamber cover (200) is provided in the form of a plate and can seal the upper opening of the process chamber (100). Additionally, the chamber cover (200) can support the injection unit (500). The injection unit (500) can be fixed to the lower side of the chamber cover (200).

[0030] The substrate support member (300) can support the substrate (W). The substrate support member (300) may have a mounting surface on which the substrate (W) can be placed. A process can be performed on the substrate (W) placed on the mounting surface of the substrate support member (300).

[0031] The substrate support (300) can heat the substrate (W). To this end, a coil (310) may be provided inside the substrate support (300). The coil (310) can generate heat with supplied power. The heat emitted from the coil (310) can be transferred to the substrate (W) through the body of the substrate support (300). The coil (310) can serve as an electrode for forming an electric field. As described below, when RF power is supplied to the shower head (520), an electric field can be formed between the shower head (520) and the coil (310).

[0032] A gas transfer line (800) may be connected to the gas supply unit (400). The gas transfer line (800) may provide a transfer path for process gas transferred to the gas supply unit (400). Multiple gas transfer lines (800) may be provided. Multiple gas transfer lines (800) may transfer different process gases.

[0033] The gas supply unit (400) performs the role of supplying process gas to the injection unit (500). The gas supply unit (400) can be connected to the injection unit (500).

[0034] The injection unit (500) performs the function of injecting process gas onto the substrate (W). Specifically, the injection unit (500) can ensure that the process gas is injected with a uniform distribution over the entire surface area of ​​the substrate (W). In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, and a reaction purge gas. The source gas, the source purge gas, the reaction gas, and the reaction purge gas may be injected sequentially from the injection unit (500), or at least a portion of them may be injected simultaneously. The source gas and the reaction gas may collide with each other and react after being injected from the injection unit (500). Then, the source gas activated by the reaction gas may come into contact with the substrate (W) to perform process treatment on the substrate (W). For example, the activated source gas may be deposited as a thin film on the substrate (W).

[0035] The injection unit (500) is configured to include a diffusion unit (510) and a shower head (520). The diffusion unit (510) performs the function of diffusing the process gas supplied to the process chamber (100). Process gas can be supplied from the gas supply unit (400) to the diffusion unit (510). The diffusion unit (510) can diffuse the process gas and deliver it to the shower head (520).

[0036] The showerhead (520) can spray the process gas diffused by the diffusion unit (510) onto the substrate (W). The showerhead (520) may be equipped with a plurality of spray holes for spraying the process gas. The plurality of spray holes may be distributed over a certain range of the showerhead (520). If the process gas is supplied in a concentrated manner or dilutely through some of the spray holes among the plurality of spray holes, the distribution of the process gas sprayed through the showerhead (520) may be formed unevenly. If the process gas is sprayed with an uneven distribution, the quality of the thin film deposited on the substrate (W) may be degraded. Since the process gas diffused by the diffusion unit (510) is sprayed through the showerhead (520), the distribution of the process gas sprayed onto the substrate (W) can be formed uniformly. As a result, the quality of the thin film deposited on the substrate (W) may be improved.

[0037] The power supply unit (600) can supply RF power for generating plasma to the process chamber (100). Specifically, the power supply unit (600) can supply RF power to the shower head (520). The shower head (520) may be equipped with a separate electrode plate (not shown) that receives RF power, or it may perform the role of an electrode that receives RF power itself. As described above, the substrate support unit (300) may include a coil (310) that performs the role of an electrode. When RF power is supplied to the shower head (520), an electric field may be formed between the shower head (520) and the coil (310) of the substrate support unit (300). Due to the electric field formed by the supply of RF power, the process gas introduced into the process chamber (100) is converted into particles in a plasma state, and the plasma particles react with the process gas settled on the surface of the substrate (W) to perform process treatment on the substrate (W).

[0038] The control unit (700) can perform overall control over the substrate processing device (10). For example, the control unit (700) can control the gas supply unit (400) to control the supply of process gas to the injection unit (500) or to control the supply of RF power to the showerhead (520).

[0039] Figure 2 is a bottom view of the diffusion section, and Figure 3 is a diagram showing the diffusion of process gas by the diffusion section.

[0040] Referring to FIGS. 2 and FIGS. 3, the diffusion section (510) may be equipped with spray nozzles (531, 532).

[0041] A diffusion groove (515) may be formed in the diffusion section (510). The diffusion groove (510) may be formed by indenting one side of the diffusion section (510) inwardly. The diffusion groove (510) serves to diffuse the process gas supplied from the gas supply section (400) to a certain range. The process gas diffused in the diffusion groove (510) may be distributed to a plurality of injection nozzles (531, 532) through the gas distribution line (516).

[0042] A spray nozzle (531, 532) may be provided at the end of the gas distribution line (516) branched from the diffusion groove (510). The spray nozzle (531, 532) may spray process gas supplied through the gas distribution line (516).

[0043] Spray nozzles (531, 532) are provided in the diffusion section (510) and can diffuse and spray process gas supplied to the process chamber (100). On one side of the diffusion section (510) facing the shower head (520), a nozzle groove (511) formed in a ring shape is provided, and spray nozzles (531, 532) can be placed in the nozzle groove (511).

[0044] A plurality of spray nozzles (531, 532) may be provided in the diffusion section (510). The plurality of spray nozzles (531, 532) may include a central spray nozzle (531) and peripheral spray nozzles (532). The central spray nozzle (531) may be positioned at the center of the diffusion section (510), and the peripheral spray nozzles (532) may be positioned around the central spray nozzle (531). A plurality of peripheral spray nozzles (532) may be provided. The plurality of peripheral spray nozzles (532) may be arranged in a circular pattern around the central spray nozzle (531). For example, the distance between each of the plurality of peripheral spray nozzles (532) and the central spray nozzle (531) may all be formed to be equal.

[0045] The central injection nozzle (531) and the peripheral injection nozzle (532) can simultaneously inject process gas. One injection nozzle (531, 532) can inject process gas within a specific injection range, and at least some of the injection ranges of adjacent multiple injection nozzles (531, 532) may overlap. A diffusion space for the diffusion of process gas may be formed between the diffusion section (510) and the shower head (520). The process gas injected by the central injection nozzle (531) and the peripheral injection nozzle (532) diffuses in the diffusion space, and the diffused process gas can be injected through the injection holes of the shower head (520) to reach the substrate (W).

[0046] FIG. 4 is a plan view of the injection nozzle, FIG. 5 is a side cross-sectional view of the injection nozzle, and FIG. 6 is a diagram showing the diffusion of process gas by the injection nozzle.

[0047] Referring to FIGS. 4 to 6, the injection nozzle (531, 532) is configured to include a nozzle body (540), a diffusion plate (550), and a leg (560).

[0048] The nozzle body (540) can provide a transport path for process gas supplied to the process chamber (100). Process gas supplied to the diffusion section (510) through the gas supply section (400) can be transported to the injection nozzles (531, 532) through the gas distribution line (516). The nozzle body (540) can provide a transport path for process gas transported through the gas distribution line (516). The nozzle body (540) may include a through hole (PH) for transporting process gas, and process gas passing through the through hole (PH) can be discharged from the nozzle body (540).

[0049] Here, the through hole (PH) of the central injection nozzle (531) (hereinafter referred to as the first through hole) and the through hole (PH) of the peripheral injection nozzle (532) (hereinafter referred to as the second through hole) may have a pre-set size. For example, the width of the first through hole may be greater than or equal to the width of the second through hole. To explain this in detail, the width of the first through hole may be greater than or equal to within a range of 2.5 times or less the width of the second through hole. If the width of the first through hole exceeds 2.5 times the width of the second through hole, the flow rate supplied to the central area increases compared to the peripheral area, and the uniformity of the thin film deposited on the substrate (W) may decrease. To prevent the decrease in the uniformity of the thin film, the number of peripheral injection nozzles (532) may be increased, but in this case, the assembly efficiency of the injection unit (500) may decrease and the manufacturing cost may increase. In order to maximize the effect of such injection nozzles (531, 532), preferably, the width of the first through hole may be greater than or equal to the width of the second through hole within a range of less than or equal to twice the width.

[0050] The diffusion plate (550) serves to diffuse the process gas discharged from the nozzle body (540). The process gas discharged from the nozzle body (540) collides with the diffusion plate (550) and diffuses to the surroundings. The diffusion plate (550) can be positioned at a certain distance (G) from the nozzle body (540) in the process gas discharge path. Accordingly, the process gas that collides with the diffusion plate (550) can diffuse to the surroundings through the gap between the nozzle body (540) and the diffusion plate (550).

[0051] The gap between the nozzle body (540) of the central injection nozzle (531) and the diffusion plate (550) can be formed to be larger than the gap between the nozzle body (540) and the diffusion plate (550) of the peripheral injection nozzle (532). As a result, a larger amount of process gas can be injected through the central injection nozzle (531), and the quality of the thin film deposited at the center of the substrate (W) can be improved. For example, the gap between the nozzle body (540) of the central injection nozzle (531) and the diffusion plate (550) can be 1.3 to 3 times the gap between the nozzle body (540) and the diffusion plate (550) of the peripheral injection nozzle (532). To explain this in detail, the gap between the nozzle body (540) of the central injection nozzle (531) and the diffusion plate (550) may be 1.5 to 2.5 times the gap between the nozzle body (540) of the peripheral injection nozzle (532) and the diffusion plate (550). If this gap ratio is less than 1.3 times, the flow rate supplied to the central region is reduced compared to the peripheral region, so that more thin film deposition may proceed in the peripheral region of the substrate (W) than in the central region of the substrate (W). In addition, if this gap ratio exceeds 3 times, the flow rate supplied to the central region is excessively increased compared to the peripheral region, so that more thin film deposition may proceed in the central region of the substrate (W) than in the peripheral region of the substrate (W). Considering the uniformity of the thin film deposited on the substrate (W), it is desirable that the gap ratio between the nozzle body (540) of the central injection nozzle (531) and the diffusion plate (550) satisfies the aforementioned range.

[0052] The diffusion plate (550) can be coupled to the nozzle body (540). To this end, a leg (560) may be provided between the diffusion plate (550) and the nozzle body (540). For example, two legs (560) may be provided. The posture and position of the diffusion plate (550) relative to the nozzle body (540) are fixed by the leg (560), and the gap between the nozzle body (540) and the diffusion plate (550) can be maintained.

[0053] The diffusion plate (550) may include a gas incident surface (551) and a gas inclined surface (552). The gas incident surface (551) is a surface where the process gas discharged from the nozzle body (540) collides, and represents one side of the diffusion plate (550) facing the nozzle body (540).

[0054] The gas inclined surface (552) may be formed to extend in the shape of a ring along the edge of the gas incident surface (551). The gas inclined surface (552) may be provided in a shape inclined with respect to the gas incident surface (551). Process gas that collides with the gas incident surface (551) and moves to the edge of the gas incident surface (551) may be guided by the gas inclined surface (552) and diffuse in an inclined direction.

[0055] A certain angle (A1) can be formed between the gas incident surface (551) and the gas inclined surface (552). Hereinafter, the angle (A1) between the gas incident surface (551) and the gas inclined surface (552) is referred to as the first inclined surface angle.

[0056] The first inclined surface angle (A1) can be formed at a preset angle. For example, the first inclined surface angle (A1) can be determined in the range of 0 to 60 degrees, and preferably in the range of 30 to 45 degrees. When the first inclined surface angle (A1) satisfies this range, the process gas supplied through the through hole (PH) can be effectively guided toward the substrate (W), thereby improving the diffusion efficiency of the process gas.

[0057] Additionally, the angle of the gas slope surface (552) with respect to the gas incident surface (551) of the diffusion plate (550) provided in the central injection nozzle (531) (hereinafter referred to as the first angle) may be formed differently from the angle of the gas slope surface (552) with respect to the gas incident surface (551) of the diffusion plate (550) provided in the peripheral injection nozzle (532) (hereinafter referred to as the second angle). For example, the first angle may be formed larger than the second angle. In this case, the vertical component of the process gas injected through the central injection nozzle (531) is formed larger than the vertical component of the process gas injected through the peripheral injection nozzle (532), and as a result, the quality of the thin film deposited at the center of the substrate (W) can be improved.

[0058] The distance (R1) from the central axis (Ax) of the diffusion plate (550) to one end of the gas incident surface (551) can be formed to be longer than the distance (R2) from one end of the gas incident surface (551) to the outer end of the gas inclined surface (552). As the collision area of ​​the process gas is formed to be relatively large, the diffusion efficiency of the process gas can be improved. In addition, as the distance (R1) from the central axis (Ax) of the diffusion plate (550) to one end of the gas incident surface (551) is formed to be longer than the distance (R2) from one end of the gas incident surface (551) to the outer end of the gas inclined surface (552), a constant section of the gap (G) between the nozzle body (540) and the diffusion plate (550) is secured, allowing the process gas to be effectively guided.

[0059] FIG. 7 is a drawing showing that a spray nozzle is installed in a diffusion section, FIG. 8 is a drawing showing that a spray nozzle is installed in a diffusion section, and FIG. 9 is a drawing for explaining the arrangement relationship of the spray nozzle installed in the diffusion section.

[0060] Referring to FIGS. 7 and 8, the injection nozzle (531, 532) can be installed in the nozzle groove (511) of the diffusion section (510).

[0061] The nozzle groove (511) may include a nozzle fixing groove (511a) and a guide groove (511b). The nozzle fixing groove (511a) may provide a space into which the nozzle body (540) of the injection nozzle (531, 532) is inserted and fixed. The nozzle body (540) may be inserted and fixed in the nozzle fixing groove (511a). Meanwhile, although not illustrated, the nozzle body (540) may be fixed to the diffusion section (510) using a fastening means such as a bolt. To this end, the nozzle body (540) may be provided with a flange (not illustrated) for connection with the bolt. With the nozzle body (540) inserted into the nozzle fixing groove (511a), the nozzle body (540) may be fixed to the diffusion section (510) by the fastening means.

[0062] The guide groove (511b) may provide a space for guiding the diffusion direction of the process gas sprayed from the spray nozzles (531, 532). The diffusion plate (550) of the spray nozzles (531, 532) may be placed in the guide groove (511b). The guide groove (511b) may include a guide inclined surface (512). The guide inclined surface (512) may be an inner surface of the guide groove (511b). The guide inclined surface (512) is formed to surround the diffusion plate (550) and may guide the process gas diffused from the diffusion plate (550) toward the shower head (520). To this end, the distance between the guide inclined surface (512) and the shower head (520) may decrease as it proceeds from the center of the guide groove (511b) toward the edge. The process gas that is diffused by colliding with the diffusion plate (550) generally contains a horizontal movement component, but a vertical movement component of the process gas can be formed by the guide inclined surface (512).

[0063] For example, a certain angle (A2) may be formed between the central axis (Ax) of the diffusion plate (550) and the guide inclined surface (512). Hereinafter, the angle (A2) between the central axis (Ax) of the diffusion plate (550) and the guide inclined surface (512) is referred to as the second inclined surface angle.

[0064] The second inclined surface angle (A2) is formed in the range of 45 to 85 degrees, and preferably in the range of 55 to 85 degrees. If the second inclined surface angle (A2) is less than 45 degrees, the process gas may not diffuse sufficiently and may be concentrated in some areas, and if the second inclined surface angle (A2) exceeds 85 degrees, the vertical movement component of the process gas may not be sufficiently formed, and thus the injection of the process gas through the showerhead may not be easily performed.

[0065] The gas inclined surface (552) and the guide inclined surface (512) may be parallel or formed at a certain angle. Preferably, the gas inclined surface (552) and the guide inclined surface (512) may be formed such that the gap between the gas inclined surface (552) and the guide inclined surface (512) increases as the process gas diffused from the diffusion plate (550) proceeds toward the shower head (520). Hereinafter, the angle (A3) between the gas inclined surface (552) and the guide inclined surface (512) is referred to as the third inclined surface angle.

[0066] The process gas diffused by the diffusion plate (550) can be guided by the gas inclined surface (552) and the guide inclined surface (512) and sprayed into the showerhead (520). The spray distribution of the process gas can be determined according to the third inclined surface angle (A3). The third inclined surface angle (A3) is determined from 0 to 80 degrees, and preferably from 10 to 70 degrees. If the third inclined surface angle (A3) is less than 0 degrees, the process gas can be sprayed in a concentrated form, and if the third inclined surface angle (A3) exceeds 80 degrees, the diffusion distance of the process gas can be reduced. As the third inclined surface angle (A3) is formed to an appropriate size, sufficient diffusion form and diffusion distance of the process gas can be secured.

[0067] As illustrated in FIG. 9, peripheral injection nozzles (532) may be arranged in a circular pattern around a central injection nozzle (531). The injection nozzles (531, 532) may include a leg (560) connecting the nozzle body (540) and the diffusion plate (550). Process gas injected from the injection nozzles (531, 532) may be interfered with by the leg (560). When the process gas is interfered with by the leg (560), the distribution of the process gas may be formed unevenly.

[0068] To prevent such uneven distribution of process gas, the leg (560) provided in the peripheral injection nozzle (532) may be positioned on the circumference of a virtual circle (CL) formed with respect to the central axis (Bx) of the central injection nozzle (531). As the leg (560) of the peripheral injection nozzle (532) is positioned on the path of the virtual circle (CL), only the process gas injected toward adjacent peripheral injection nozzles (532) is interfered with by the leg (560), and the process gas injected radially from the center of the central injection nozzle (531) can be injected without interference from the leg (560).

[0069] FIG. 10 is a drawing showing a spray nozzle equipped with one leg, and FIG. 11 is a drawing showing a spray nozzle with a diffusion plate installed on a shower head.

[0070] Referring to FIG. 10, the injection nozzle (533) may include one leg (560). When the strength of the one leg (560) is sufficiently large, the orientation and position of the diffusion plate (550) relative to the nozzle body (540) is fixed, and the gap between the nozzle body (540) and the diffusion plate (550) can be maintained.

[0071] Referring to FIG. 11, the diffusion plate (550) provided in the spray nozzle (534) can be coupled to the shower head (520).

[0072] The leg (560) supports the diffusion plate (550) with respect to the showerhead (520), and in this case, the process gas sprayed from the spray nozzle (534) can be prevented from being interfered with by the leg (560).

[0073] Figure 12 is a drawing showing a spray nozzle equipped with a spray hole.

[0074] Referring to FIG. 12, the diffusion plate (550) provided in the injection nozzle (535) may include at least one injection hole (DH) through which process gas discharged from the nozzle body (540) passes.

[0075] As a spray hole (DH) is formed in the diffusion plate (550), some of the process gas colliding with the diffusion plate (550) is sprayed through the edge of the diffusion plate (550), and the remaining portion can be sprayed by passing through the spray hole (DH).

[0076] A diffusion plate (550) equipped with a spray hole (DH) may be provided at the central spray nozzle (531), and a diffusion plate (550) not equipped with a spray hole (DH) may be provided at the peripheral spray nozzle (532). Process gas sprayed through the spray hole (DH) of the central spray nozzle (531) can be diffused to the surroundings, and as a result, process gas with a uniform distribution can be sprayed over the entire area of ​​the showerhead (520).

[0077] FIG. 13 is a drawing showing a spray nozzle according to another embodiment of the present invention, and FIG. 14 is a drawing showing the spray nozzle shown in FIG. 13 installed in a diffusion section.

[0078] Referring to FIGS. 13 and 14, a spray nozzle (536) according to another embodiment of the present invention comprises a nozzle body (540), a diffusion plate (570), and a leg (560).

[0079] The nozzle body (540) can provide a transport path for the process gas supplied to the process chamber (100). The diffusion plate (570) can diffuse the process gas discharged from the nozzle body (540). The leg (560) can connect the nozzle body (540) and the diffusion plate (570).

[0080] The diffusion plate (570) may include a gas inclined surface (571) that is inclined in a cone shape with respect to a reference plane. One side of the diffusion plate (570) facing the nozzle body (540) may be formed in a cone shape. Here, the reference plane may be the opposite side of the diffusion plate (570) where the gas inclined surface (571) is not formed, the surface of the shower head (520), the seating surface of the substrate support (300), or the ground. Process gas discharged from the nozzle body (540) may be guided and diffused by the gas inclined surface (571) of the diffusion plate (570).

[0081] A guide slope surface (512) may be formed in the diffusion section (510). The gas slope surface (571) and the guide slope surface (512) may be parallel or formed at a certain angle. Preferably, the gas slope surface (571) and the guide slope surface (512) may be formed such that the gap between the gas slope surface (571) and the guide slope surface (512) increases as the process gas diffused from the diffusion plate (570) proceeds toward the shower head (520). That is, the gap between the gas slope surface (571) and the guide slope surface (512) may be formed to gradually increase as it moves away from the central axis (Cx) of the diffusion plate (570), thereby appropriately controlling the flow velocity and flow rate of the process gas, and improving the diffusion efficiency of the process gas.

[0082] The process gas diffused by the diffusion plate (570) can be guided by the gas inclined surface (571) and the guide inclined surface (512) and sprayed into the shower head (520). The spray distribution of the process gas can be determined according to the angle (A4) (hereinafter referred to as the fourth inclined surface angle) between the gas inclined surface (571) and the guide inclined surface (512). The fourth inclined surface angle (A4) can be determined in the range of 0 to 60 degrees. If the fourth inclined surface angle (A4) does not satisfy this range, for example, if the fourth inclined surface angle (A4) exceeds 60 degrees, the gap between the guide inclined surface (512) and the gas inclined surface (571) increases rapidly from the central axis (Cx) of the diffusion plate (570) toward the end, and the process gas may not be diffused uniformly. Considering the uniformity of the thin film deposited on the substrate (W) and the uniformity of the process gas, the fourth inclined plane angle (A4) can preferably be determined in the range of 0 to 45 degrees.

[0083] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0084] 10: Substrate processing device 100: Process chamber 200: Chamber cover 300: Substrate support 400: Gas supply unit 500: Injection unit 510: Diffusion section 511: Nozzle groove 512: Guide slope 520: Shower head 531, 532, 533, 534, 535, 536: Spray nozzles 540: Nozzle body 550: Diffusion plate 551: Gas incidence plane 552, 571: Gas inclined plane 560: Leg 600: Power supply unit 700: Control unit

Claims

Claim 1 A process chamber providing a process processing space for processing a substrate; a diffusion unit for diffusing a process gas supplied to the process chamber; a showerhead for spraying the process gas diffused by the diffusion unit onto the substrate; and a spray nozzle provided in the diffusion unit for diffusing and spraying the process gas supplied to the process chamber, wherein the spray nozzle comprises: a nozzle body providing a transport path for the process gas supplied to the process chamber; a diffusion plate for diffusing the process gas discharged from the nozzle body; and a leg provided between the nozzle body and the diffusion plate to maintain a gap between the nozzle body and the diffusion plate, wherein the diffusion plate comprises a gas incident surface on which the process gas discharged from the nozzle body collides; A substrate processing apparatus comprising: a gas inclined surface that is formed extending in the shape of a ring along the edge of the gas incident surface and is inclined toward the gas incident surface in a direction toward the shower head as it proceeds outward from the boundary with the gas incident surface; a distance from the central axis of the diffusion plate to one end of the gas incident surface is formed to be longer than the distance from one end of the gas incident surface to the outer end of the gas inclined surface; and a spray nozzle comprising: a central spray nozzle disposed at the center of the diffusion section; and a peripheral spray nozzle disposed around the central spray nozzle; a diffusion plate provided in the central spray nozzle comprises at least one spray hole through which process gas discharged from the nozzle body passes; and a portion of the process gas colliding with the diffusion plate of the central spray nozzle is sprayed radially through the edge of the diffusion plate of the central spray nozzle, and the remainder is sprayed in one direction through the spray hole. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 A substrate processing apparatus according to claim 1, wherein the diffusion portion is formed to surround the diffusion plate and includes a guide inclined surface that guides the process gas diffused from the diffusion plate toward the showerhead, and the gas inclined surface and the guide inclined surface are parallel or form a certain angle. Claim 7 A substrate processing apparatus according to claim 6, wherein the gas inclined surface and the guide inclined surface are formed such that the distance between the gas inclined surface and the guide inclined surface increases as the process gas diffused from the diffusion plate proceeds toward the showerhead. Claim 8 A substrate processing device according to claim 1, wherein the gap between the nozzle body of the central injection nozzle and the diffusion plate is formed to be larger than the gap between the nozzle body of the peripheral injection nozzle and the diffusion plate. Claim 9 In claim 1, the substrate processing apparatus wherein the diffusion plate comprises a gas slope surface inclined in the shape of a cone with respect to a reference plane. Claim 10 A substrate processing apparatus according to claim 9, wherein the diffusion portion is formed to surround the diffusion plate and includes a guide inclined surface that guides the process gas diffused from the diffusion plate toward the showerhead, and the gas inclined surface and the guide inclined surface are parallel or form a certain angle.

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