Polyether ether ketone polymer material and manufacturing method thereof

Abstract

The present invention relates to a polyetheretherketone polymer material, and more specifically, to a polyetheretherketone polymer material containing a polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized, wherein the polymer composition has a dielectric constant of 2.4 to 2.85 and a dielectric loss of 0.0059 to 0.024 when measured in the frequency range of 28 GHz.

Description

Technology Field

[0001] The present application relates to a polyetheretherketone polymer material and a method for manufacturing the same, and more specifically, to a polyetheretherketone polymer material having low dielectric constant and high heat resistance and a method for manufacturing the same. Background Technology

[0003] 5G communication is a technology that connects large amounts of data in real time with ultra-low latency, and it is receiving a lot of attention worldwide as it can be applied to various fields such as digital healthcare, fintech, autonomous vehicles, and smart cities.

[0004] In addition, there is a growing trend in technical requirements for FCCL for fabricating flexible substrates for wearable devices, which are in high demand recently. In particular, there is an increasing demand for polymer materials for 5G FCCL that have low dielectric constant and low dielectric loss characteristics to enable high-speed processing of communication signals in the high-frequency band corresponding to 5G.

[0005] Figure 1 is a diagram illustrating the structure of FCCL.

[0006] Referring to Figure 1, the Flexible Copper Clad Laminate (FCCL) consists of a copper thin film, a polymer substrate, and an adhesive layer. When receiving electromagnetic wave signals in a wireless communication device, dielectric loss behavior is exhibited in the polymer substrate and the adhesive layer, resulting in loss and delay of the electromagnetic wave signal. Therefore, in 5G wireless communication methods that use a frequency band approximately 30 times that of 4G LTE, extremely severe losses appear in the form of heat depending on the dielectric constant of the FCCL substrate, and to prevent this, the development of materials with low dielectric constant and high heat resistance is essential.

[0007] Figure 2 is a diagram illustrating the structure of polyimide and poly(ether ether ketone) (PEEK).

[0008] Referring to Figure 2, polyimide (PI)-based polymer films synthesized by the polymerization of conventional acid dianhydrides and diamines are mainly used as substrate materials for FCCL due to their high dielectric breakdown voltage, excellent mechanical strength, chemical resistance, heat resistance, and high hygroscopicity, but they still have limitations in being applied as substrate materials for 5G FCCL due to their high dielectric constant.

[0009] Polyetheretherketones, which have aromatic ethers and aromatic ketones as repeating units, have been examined for their potential as FCCL substrate materials due to their excellent mechanical strength, chemical resistance, heat resistance, and low hygroscopicity comparable to PI, but their application as 5G materials is still limited due to their high dielectric constant.

[0010] Therefore, there is a need to develop technology for synthesizing polyetheretherketone polymer materials with characteristics of low dielectric constant, high heat resistance, and low moisture absorption. The problem to be solved

[0012] The objective is to provide a polyetheretherketone polymer material and a method for manufacturing the same, wherein the dielectric constant is significantly reduced by introducing bulk nonpolar molecules into the polyetheretherketone chain, while maintaining the original advantages of polyetheretherketone, such as high strength, high heat resistance, and low moisture absorption.

[0013] The problems to be solved by this application are not limited to those described above, and problems not mentioned will be clearly understood by those skilled in the art from this specification and the attached drawings. means of solving the problem

[0015] According to one aspect of the present invention, a polyetheretherketone polymer material may be provided comprising a polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized, wherein the aromatic diol comprises one or more selected from the group consisting of t-butylhydroquinone and bisphenol AP.

[0016] In one embodiment, the polymer composition may include bulk nonpolar molecules having a free volume.

[0017] In one embodiment, the polymer composition may have a dielectric constant of 2.4 to 2.85 and a dielectric loss of 0.0059 to 0.024 when measured in the frequency range of 28 GHz, a tensile strength of 77 MPa or less and an elongation of 8% or more, a moisture absorption rate of 1% or less, and a decomposition temperature of 450 ℃ or more when measured by thermogravimetric analysis.

[0018] In one embodiment, the aromatic dihalogen may include 4,4'-difluorobenzophenone.

[0019] A method for preparing a polyetheretherketone polymer material according to another aspect of the present invention may include the steps of: obtaining a reaction solution by adding a mixture comprising an aromatic diol and an aromatic dihalogen to an organic solvent; and forming a reaction product comprising a polyetheretherketone polymer polymerized by a polymerization reaction including a nucleophilic aromatic substitution reaction in the reaction solution. The aromatic diol may include one or more selected from the group consisting of t-butylhydroquinone and bisphenol AP.

[0020] In one embodiment, the aromatic diol may include bisphenol AP and t-butylhydroquinone contained in a molar amount of at least 1 / 3 of the molar amount of bisphenol AP.

[0021] In one embodiment, the reaction solution includes alkaline carbonate, and the number of moles of alkaline carbonate may be 1 to 1.5 times the number of moles of the aromatic diol.

[0022] In one embodiment, the step of forming the reaction product may be performed in the range of 120 to 200 ℃.

[0023] In one embodiment, the step of forming the reaction product may include a first heat treatment step performed at 120 to 140 ℃ for 2 to 4 hours, and a second heat treatment step performed at 160 to 200 ℃ for 4 to 8 hours after the first heat treatment step is performed.

[0024] A method for manufacturing a polyetheretherketone polymer material according to an embodiment of the present invention may further include the steps of extracting and filtering the reaction product; and drying the filtered product. The filtration step may be performed using one or more filtrates selected from the group consisting of alcohol solvents and water.

[0025] A method for manufacturing a polyetheretherketone polymer material according to an embodiment of the present invention may further include a step of forming a film from the dried product. The step of forming a film may include: a step of placing a solution in which the dried product is dissolved on a support and evaporating the solvent of the solution to form a polyetheretherketone film; and a step of pressing the polyetheretherketone film.

[0026] In one embodiment, the solvent comprises at least one of chloroform and tetrahydrofuran, and the dried product may be dissolved in the solvent at a rate of 6 wt% or more.

[0027] In one embodiment, the polyetheretherketone film can be heated to 180 to 250°C when pressurized.

[0028] In one embodiment, the polyetheretherketone film may be heated at a heating rate of 5 to 10 ℃ / min when pressurized.

[0029] In one embodiment, the polyetheretherketone film can be cooled to room temperature after being heated.

[0030] The means for solving the problem of the present invention are not limited to the means for solving the problem described above, and unmentioned means for solving the problem will be clearly understood by those skilled in the art to which the present invention belongs from this specification and the attached drawings. Effects of the invention

[0031] According to one embodiment of the present application, by introducing bulk nonpolar molecules into the polyetheretherketone chains of a polyetheretherketone polymer, the dielectric constant is significantly reduced, while maintaining the original advantages of polyetheretherketone, such as high strength, high heat resistance, and low moisture absorption, thereby enabling stable performance when applied to various electronic components, such as 5G wireless communication electronic devices.

[0032] The effects of the present application are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the attached drawings. Brief explanation of the drawing

[0034] Figure 1 is a diagram illustrating the structure of FCCL. Figure 2 is a diagram illustrating the structure of polyimide and polyetheretherketone. Figure 3 is a diagram illustrating a conventional polyetheretherketone and a polyetheretherketone into which a bulk nonpolar molecule has been introduced. Figures 4 and 5 are drawings for explaining a method for manufacturing a polyetheretherketone polymer material. Figure 6 shows the ratios of t-butylhydroquinone and bisphenol AP in the present invention. 1 This is a diagram showing the H-NMR measurement results. Figure 7 is a figure showing the dielectric constant and dielectric loss in the 28 GHz frequency range according to the ratio of t-butylhydroquinone and bisphenol AP in the present invention. Figure 8 is a diagram showing the DSC measurement results according to the ratio of t-butylhydroquinone and bisphenol AP in the present invention. Figure 9 is a diagram showing the TGA measurement results according to the ratio of t-butylhydroquinone and bisphenol AP in the present invention. Figure 10 is a diagram showing the tensile test measurement results according to the ratio of t-butylhydroquinone and bisphenol AP in the present invention. Specific details for implementing the invention

[0035] The aforementioned objects, features, and advantages of the present invention will become more apparent from the following detailed description in conjunction with the accompanying drawings. However, as the present invention is subject to various modifications and may have various embodiments, specific embodiments are illustrated in the drawings and described in detail below.

[0037] The polyetheretherketone polymer material according to an embodiment of the present invention may contain a polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized. Herein, the polymer composition may include bulk nonpolar molecules having a free volume.

[0038] Figure 3 is a diagram illustrating a conventional polyetheretherketone and a polyetheretherketone into which a bulk nonpolar molecule has been introduced.

[0039] According to the Debye equation, the dielectric constant of polymer materials is known to increase with the polarity of the repeating unit and the number density of the dipoles. In the case of polyetheretherketone materials, they possess a highly crystalline structure due to the pi-pi stacking between the aromatic rings of the repeating unit, and consequently, ether and ketone functional groups with relatively high polarity are aligned at a high density within the polymer, resulting in a high dielectric constant.

[0040] A low dielectric constant polyetheretherketone material was synthesized by introducing relatively large nonpolar molecules into the side chain portions of the polyetheretherketone polymer chain to reduce the polarity of the repeating unit, induce free volume within the polyetheretherketone material, and reduce the number density of dipoles.

[0041] In one embodiment, the aromatic diol may comprise one or more selected from the group consisting of t-butylhydroquinone (tert-butylhydroquinone, TBHQ) and bisphenol AP (bisphenol AP; 4,4′-(1-Phenylethylidene)bisphenol).

[0042] Polyetheretherketone polymer materials may include bulk nonpolar molecules having a molecular structure according to the following (Chemical Formula 1) or (Chemical Formula 2).

[0043] [Chemical Formula 1] (t-butylhydroquinone)

[0044]

[0045] [Chemical Formula 2] (Bisphenol AP)

[0046]

[0047] In one embodiment, the aromatic dihalogen may include 4,4'-difluorobenzophenone.

[0048] Polyetheretherketone polymer materials may include molecules having a molecular structure according to the following (Chemical Formula 3).

[0049] [Chemical Formula 3]

[0050]

[0051] A polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized, or a polyetheretherketone polymer material comprising said polymer composition, may have a dielectric constant of 2.4 to 2.85 and a dielectric loss of 0.0059 to 0.024 when measured in the frequency range of 28 GHz.

[0052] It is known that general PI films have a dielectric constant of about 3.4 and polyetheretherketone films have a dielectric constant of about 3.1, which is somewhat high, making it difficult to utilize them as FCCL for 5G. For film substrates used in 5G wireless communication FCCL, a material having a dielectric constant of less than 3 in the high-frequency band is required, and the polyetheretherketone polymer material according to one embodiment has a dielectric constant of 2.4 to 2.85 and a dielectric loss of 0.0059 to 0.024 when measured in the frequency range of 28 GHz, so it can be utilized as FCCL for 5G.

[0053] A polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized, or a polyetheretherketone polymer material comprising said polymer composition, may have a moisture absorption rate of 1% or less.

[0054] The dielectric constant of water molecules is approximately 78.2 at 25°C, so in the case of hygroscopic materials, even if the dielectric constant of the material itself is low, it can have a high dielectric constant due to water. Accordingly, there is a need to develop materials with a moisture absorption rate of less than 1 wt%, and the polyetheretherketone polymer material according to one embodiment has a moisture absorption rate of 1% or less and can be utilized as FCCL for 5G.

[0055] A polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized, or a polyetheretherketone polymer material comprising said polymer composition, may have a decomposition temperature of 450°C or higher when measured by thermogravimetric analysis.

[0056] Since the release of heat due to dielectric loss is accompanied during the signal reception process within the FCCL device, stability of the material at high temperatures is required, and the polyetheretherketone polymer material according to one embodiment has a decomposition temperature of 450°C or higher when measured by thermogravimetric analysis, so it can be utilized as an FCCL for 5G.

[0057] A polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized, or a polyetheretherketone polymer material comprising said polymer composition, may have a tensile strength of 77 MPa or less and an elongation of 8% or more.

[0058] A polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized, or a polyetheretherketone polymer material comprising said polymer composition, may have a glass transition temperature of 160°C or higher.

[0060] Meanwhile, the polyetheretherketone polymer material according to the embodiment of the present invention, which is composed of the above-described composition, can be manufactured by the following manufacturing process.

[0061] Figures 4 and 5 are drawings for explaining a method for manufacturing a polyetheretherketone polymer material.

[0062] Referring to FIGS. 4 and 5, a method for manufacturing a polyetheretherketone polymer material according to one embodiment may consist of the steps of manufacturing a polyetheretherketone polymer and forming the manufactured polyetheretherketone polymer into a film.

[0063] The step of preparing a polyetheretherketone polymer according to one embodiment may include the step of obtaining a reaction solution by adding a mixture containing an aromatic diol and an aromatic dihalogen to an organic solvent, the step of forming a reaction product comprising a polyetheretherketone polymer polymerized by a polymerization reaction including a nucleophilic aromatic substitution reaction in the reaction solution, the step of extracting and filtering the reaction product, and the step of drying the filtered product.

[0064] A reaction solution can be obtained by adding a mixture containing an aromatic diol and an aromatic dihalogen to an organic solvent. Here, since a high molecular weight can be obtained by reacting the aromatic diol and the aromatic dihalogen in a 1:1 ratio, the aromatic diol and the aromatic dihalogen can be mixed in the same ratio.

[0065] The polyetheretherketone polymer to be manufactured may include bulk nonpolar molecules having a free volume, and for this purpose, the aromatic diol may include one or more selected from the group consisting of t-butylhydroquinone and bisphenol AP.

[0066] Preferably, the number of moles of t-butylhydroquinone used in the manufacturing method may be at least 1 / 3 of the number of moles of bisphenol AP.

[0067] The organic solvent into which the mixture containing aromatic diols and aromatic dihalogens is introduced may include one or more selected from the group consisting of sulfolane and toluene.

[0068] Alkaline carbonate may be included in the reaction solution to aid in the preparation of polyetheretherketone polymers. Here, the number of moles of alkaline carbonate may be equal to or greater than the number of moles of aromatic diol. The reaction when alkaline carbonate is added is R(OH)2 + CO3 2- → R(O - Since )2 + H2CO3, H2CO3 → H2O + CO2, an equal or greater number of moles of carbonate as aromatic diol is required. Specifically, the number of moles of alkali carbonate may be 1 to 1.5 times the number of moles of aromatic diol.

[0069] Additionally, the reaction solution can be degassed with argon gas.

[0070] A reaction product comprising a polyetheretherketone polymer polymerized by a polymerization reaction including a nucleophilic aromatic substitution reaction in a reaction solution can be formed.

[0071] For example, the reaction solution can be placed in a round flask connected to a Dean-Stark trap and a condenser, and the reaction can be carried out.

[0072] The step of forming the reaction product can be carried out in the range of 120 to 200 ℃. The reason for carrying it out in this temperature range is that water can be removed by evaporation and nucleophilic aromatic substitution reactions can occur.

[0073] Specifically, the step of forming the reaction product may be carried out at 120 to 140 °C for 2 to 4 hours so that water is removed by evaporation. Afterwards, the step of forming the reaction product may be carried out at 160 to 200 °C for 4 to 8 hours so that a nucleophilic aromatic substitution reaction may occur.

[0074] After the step of forming the reaction product, the reaction product can be extracted and filtered. Additionally, the filtered product can be dried after extraction and filtration.

[0075] For example, it can be filtered through one or more filtrates selected from the group consisting of alcohol solvents and water. Specifically, the reaction product can be redeposited and filtered two or more times through an alcohol solvent or water, or both alcohols and water, and then dried under vacuum.

[0076] In addition, the dried product can be formed into a film.

[0077] Film formation of the dried product may include the steps of placing a solution in which the dried product is dissolved on a support and evaporating the solvent of the solution to form a polyetheretherketone film, and pressing the polyetheretherketone film.

[0078] Here, the solvent may include at least one of chloroform and tetrahydrofuran, and the dried product may be soluble in the solvent at a concentration of 6 wt% or more.

[0079] The dried product may be heated to 180 to 250°C during pressurization for film formation. This is because a temperature higher than the glass transition temperature Tg must be applied for film forming, and deformation occurs at excessively high temperatures. Here, heating may be performed at a heating rate of 5 to 10°C / min during pressurization. This is because if the heating rate is too low, the heating time is long, causing deformation of the film, and if it is too high, there is a risk of bubbles forming in the film. After heating, it may be cooled to room temperature.

[0080] For example, the solution can be dissolved in chloroform (or tetrahydrofuran) at a concentration of about 6 wt% or more (e.g., 6 to 10 wt%), poured into a crystallization dish, and dried at room temperature. After separating the dried polyetheretherketone polymer film, it can be heated to 180 to 250 ℃ at a heating rate of 5 to 10 ℃ / min under a pressure of 1 MPa or more. After maintaining the temperature within this range for about 10 minutes, it can be naturally cooled until the temperature drops to room temperature, and the polyetheretherketone polymer film can be recovered (the pressure is maintained until recovery).

[0082] Below, more specific embodiments according to the present invention and various analyses through them have been performed, and the functionality and utility according to the present invention are explained, as well as to help further understand the present invention.

[0083] (Example)

[0084] 1. Preparation of Polyetheretherketone Polymer Materials

[0085] A solution was prepared by mixing a mixture of 0.02 mol of t-butylhydroquinone and bisphenol AP in a specific ratio with 0.02 mol of 4,4'-difluorobenzophenone and 0.035 mol of K2CO3 in 40 mL of sulfolane and 20 mL of toluene, and this solution was degassed with argon gas. The solution was placed in a round-bottom flask connected to a Dean-Stark trap and a condenser, and reacted at 140 °C for 4 hours and at 200 °C for 8 hours. Afterward, the solution was redeposited twice each in methanol and water, respectively, and then dried. The molecular structure of the synthesized polyetheretherketone polymer is as shown in Chemical Formula 4 below.

[0086] [Chemical Formula 4]

[0087]

[0088] 0.75 g of the obtained PEEK polymer was dissolved in 10 mL of chloroform, the solution was poured into a crystallization dish, and dried at room temperature. After separating the dried polymer film, it was heated to 250 ℃ at a heating rate of 5 ℃ / min under a pressure of 3 MPa. The pressure was maintained, and after holding at 250 ℃ for 10 minutes, the temperature was waited until it dropped to room temperature, after which the film was recovered.

[0090] 2. Analysis and Results

[0091] Based on the ratio of t-butylhydroquinone T(x) and the ratio of bisphenol AP B(100-x), the sample name is set as T(x)B(100-x) and explained.

[0092] Figure 6 shows the ratios of t-butylhydroquinone and bisphenol AP in the present invention. 1 This is a diagram showing the H-NMR measurement results.

[0093] The synthesized polyetheretherketone polymer 1Synthesis can be confirmed through H-NMR (proton nuclear magnetic resonance) measurements. The synthesis of polyetheretherketone polymers in each sample can be confirmed through the t-butylhydroquinone peaks at approximately 7.18 and 6.91 ppm and the bisphenol AP peaks at 7.11 and 6.98 ppm.

[0094] Figure 7 is a figure showing the dielectric constant and dielectric loss in the 28 GHz frequency range according to the ratio of t-butylhydroquinone and bisphenol AP in the present invention.

[0095] The complex permittivity in an oscillating electromagnetic field is It is given as such, and the real part is defined as the dielectric constant, and the ratio of the real part to the imaginary part is defined as the dielectric loss.

[0096] As a result of measuring the dielectric properties of each sample, it was confirmed that it has a significantly lower dielectric constant (2.844 to 2.421) than bare PEEK and a somewhat higher dielectric loss (0.00591 to 0.0242).

[0097] This is understood to be because the free volume generated by bulky groups results in a low permittivity, and the increased molecular mobility caused by that free volume leads to high dielectric loss.

[0098] Figure 8 is a diagram showing the DSC measurement results according to the ratio of t-butylhydroquinone and bisphenol AP in the present invention. Figure 9 is a diagram showing the TGA measurement results according to the ratio of t-butylhydroquinone and bisphenol AP in the present invention.

[0099] Differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA) were performed to verify the heat resistance of the polymer samples.

[0100] Referring to Figure 8, it can be seen that all polyetheretherketone samples have values ​​(160 to 170 °C) higher than bare PEEK (approx. 146 °C). This is understood to be because large functional groups were introduced into the main chain, hindering the mobility of the chain.

[0101] Referring to Fig. 9, the results of the thermogravimetric analysis show that specimen T100B0 has the highest decomposition temperature (Td,i: initial decomposition temperature, Td,max: decomposition temperature at maximum decomposition rate), and that T0B100 has the lowest decomposition temperature.

[0102] All samples had a decomposition temperature of 450°C or higher, which is understood to be a suitable level for use in FCCL substrates for 5G.

[0103] Figure 10 is a diagram showing the tensile test measurement results according to the ratio of t-butylhydroquinone and bisphenol AP in the present invention.

[0104] As a result of measuring tensile tests for each sample, it was confirmed that they have a tensile strength of 66.80–76.38 MPa and an elongation of 10.81–27.02%. Compared to the most widely commercialized general polyimide film currently, which has a tensile strength of approximately 78.3 MPa and an elongation of 7.4%, it can be confirmed that they possess excellent mechanical properties.

[0105] Sample M n (x10 3 ) M w (x10 3 ) permittivity Dielectric loss (x10 -3 ) T g (℃) T d,i (℃) T d,max (℃) Tensile strength (MPa) Elongation rate (%) Moisture absorption rate (%) T100B0 50.7 89.1 2.476 6.64 163.0 469.2 516.7 66.80 27.02 0.217 T75B25 44.3 83.7 2.643 10.02 169.7 477.8 498.9 69.46 13.26 0.120 T50B50 46.8 92.9 2.646 6.88 169.8 473.5 497.5 67.61 26.45 0.263 T25B75 10.5 71.7 2.421 5.91 167.7 477.0 499.6 62.14 10.81 0.497 T0B100 48.0 109.1 2.844 24.21 - 458.9 478.5 76.38 19.73 0.350

[0106] Table 1 is a table showing the physical property results of samples according to the ratio of t-butylhydroquinone and bisphenol AP.

[0107] The dielectric constant of water is very high at approximately 78.4. As the polymer absorbs water, its dielectric constant increases rapidly. Therefore, low moisture absorption is also a necessary condition for FCCL polymer substrates.

[0108] Referring to Table 1, the prepared polyetheretherketone films were immersed in water for 24 hours, the surface moisture was wiped off, and the weight was measured again to determine the ratio of the weight change to the initial weight, thereby measuring the moisture absorption rate. It was confirmed that all of them had excellent moisture absorption rates of 0.5% or less.

[0109] The embodiments described above are merely illustrative of preferred embodiments of the present invention and are not strictly limited to such embodiments. Various modifications, variations, or substitutions of steps may be made by those skilled in the art within the technical spirit and scope of the claims of the present invention, and such actions shall be deemed to fall within the technical scope of the present invention.

Claims

Claim 1 A polyetheretherketone polymer material comprising a polymer composition in which an aromatic diol and an aromatic dihalogen are polymerized, wherein the aromatic diol comprises t-butylhydroquinone and bisphenol AP in a molar ratio of 1:3, and a mixture comprising the aromatic diol and the aromatic dihalogen is placed in an organic solvent comprising sulfolane and toluene in a volume ratio of 2:1 to obtain a reaction solution; the reaction solution is placed in a round-bottom flask connected to a Dean-Stark trap and a condenser, and a reaction product is formed comprising a polyetheretherketone polymer polymerized by a polymerization reaction including a nucleophilic aromatic substitution reaction, and having a glass transition temperature of 160°C or higher; the reaction product is extracted and filtered; and the filtered product is dried. A polyetheretherketone polymer material, manufactured by a manufacturing method comprising: a step of forming a film of the dried product; wherein the filtration step is performed using one or more filtrates selected from the group consisting of alcohol solvents and water, and the film forming step comprises a step of placing a solution in which the dried product is dissolved on a support and evaporating the solvent of the solution to form a polyetheretherketone film; and a step of pressurizing the polyetheretherketone film, wherein the polyetheretherketone film is heated to 180 to 250 ℃ at a heating rate of 5 to 10 ℃ / min upon pressurization to a temperature above the glass transition temperature. Claim 2 In claim 1, the polymer composition comprises a polyetheretherketone polymer material having a bulk nonpolar molecule having a free volume. Claim 3 The polyetheretherketone polymer material according to claim 1, wherein the polymer composition has a dielectric constant of 2.4 to 2.85 and a dielectric loss of 0.0059 to 0.024 when measured in the frequency range of 28 GHz, a tensile strength of 77 MPa or less and an elongation of 8% or more, a moisture absorption rate of 1% or less and a decomposition temperature of 450 ℃ or more when measured by thermogravimetric analysis. Claim 4 In claim 1, the aromatic dihalogen comprises 4,4'-difluorobenzophenone, a polyetheretherketone polymer material. Claim 5 A step of obtaining a reaction solution by placing a mixture containing an aromatic diol and an aromatic dihalogen into an organic solvent containing sulfolane and toluene in a volume ratio of 2:1; a step of placing the reaction solution into a round-bottom flask connected to a Dean-Stark trap and a condenser, and forming a reaction product comprising a polyetheretherketone polymer polymerized by a polymerization reaction including a nucleophilic aromatic substitution reaction, and having a glass transition temperature of 160°C or higher; a step of extracting and filtering the reaction product; a step of drying the filtered product; and a step of forming the dried product into a film; wherein the filtration step is performed using one or more filtrates selected from the group consisting of alcohol solvents and water, and the film forming step is a step of placing a solution in which the dried product is dissolved on a support and evaporating the solvent of the solution to form a polyetheretherketone film. A method for manufacturing a polyetheretherketone polymer material, comprising the step of pressing the polyetheretherketone film, wherein the polyetheretherketone film is heated to 180 to 250 ℃ at a heating rate of 5 to 10 ℃ / min when pressed to a temperature above the glass transition temperature, and wherein the aromatic diol comprises t-butylhydroquinone and bisphenol AP in a molar ratio of 1:

3. Claim 6 A method for manufacturing a polyetheretherketone polymer material according to claim 5, wherein the polyetheretherketone polymer comprises bulk nonpolar molecules having a free volume. Claim 7 delete Claim 8 A method for producing a polymer material of polyetheretherketone according to claim 5, wherein the reaction solution comprises alkaline carbonic acid, and the number of moles of alkaline carbonic acid is 1 to 1.5 times the number of moles of aromatic diol. Claim 9 A method for manufacturing a polymer material of polyetheretherketone, wherein, in claim 5, the step of forming the reaction product is performed in the range of 120 to 200 ℃. Claim 10 A method for manufacturing a polymer material of polyetheretherketone, wherein the step of forming the reaction product comprises a first heat treatment step performed at 120 to 140 ℃ for 2 to 4 hours, and a second heat treatment step performed at 160 to 200 ℃ for 4 to 8 hours after the first heat treatment step is performed. Claim 11 delete Claim 12 delete Claim 13 A method for preparing a polyetheretherketone polymer material according to claim 5, wherein the solvent comprises at least one of chloroform and tetrahydrofuran, and the dried product is dissolved in the solvent at a concentration of 6 wt% or more. Claim 14 delete Claim 15 delete Claim 16 A method for manufacturing a polyetheretherketone polymer material according to claim 5, wherein the polyetheretherketone film is cooled to room temperature after being heated. Claim 17 A method for manufacturing a polyetheretherketone polymer material according to claim 5, wherein the polyetheretherketone polymer has a dielectric constant of 2.4 to 2.85 and a dielectric loss of 0.0059 to 0.024 when measured in the frequency range of 28 GHz, a tensile strength of 77 MPa or less and an elongation of 8% or more, a moisture absorption rate of 1% or less and a decomposition temperature of 450 ℃ or more when measured by thermogravimetric analysis.

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