Semiconductor light emitting diode pacakge

Abstract

A semiconductor light-emitting device package according to an embodiment of the present invention may include: a ceramic substrate having first and second electrode structures; a light-emitting diode chip mounted on the ceramic substrate, electrically connected to the first and second electrode structures, and configured to emit ultraviolet light; metal patterns spaced apart from the first and second electrode structures on the ceramic substrate; an adhesive pattern disposed between adjacent metal patterns on the ceramic substrate, having two sides in contact with one side of the metal patterns and an upper surface located at a level below the lower surface of the light-emitting diode chip; and a protective body that is adhered to the ceramic substrate by the adhesive pattern and provides a cavity surrounding the light-emitting diode chip.

Description

Technology Field

[0001] The present disclosure relates to a semiconductor light-emitting device package. Background Technology

[0003] Semiconductor light-emitting devices are known as next-generation light sources that have advantages such as a long lifespan, low power consumption, fast response speed, and environmental friendliness compared to conventional light sources. They are attracting attention not only as lighting sources for general lighting devices, display devices, and automotive lamps, but also as various functional light sources for sterilization, growth promotion, and bio-effects.

[0004] These semiconductor light-emitting devices require a reliable package structure to improve heat dissipation performance along with light extraction efficiency. The problem to be solved

[0006] One of the problems to be solved in the present disclosure is to provide a semiconductor light-emitting device package having excellent sealing and heat dissipation performance. means of solving the problem

[0008] One embodiment of the present disclosure may provide a semiconductor light-emitting device package comprising: a ceramic substrate having first and second electrode structures; a light-emitting diode chip mounted on the ceramic substrate, electrically connected to the first and second electrode structures, and configured to emit ultraviolet light; metal patterns spaced apart from the first and second electrode structures on the ceramic substrate; an adhesive pattern disposed between adjacent metal patterns on the ceramic substrate, having two sides in contact with one side of the metal patterns and an upper surface located at a level below the lower surface of the light-emitting diode chip; and a protective body attached to the ceramic substrate by the adhesive pattern and providing a cavity surrounding the light-emitting diode chip.

[0009] One embodiment of the present disclosure provides a semiconductor light-emitting device package comprising: a circuit board having a ceramic substrate and first and second electrode structures penetrating the ceramic substrate; a light-emitting diode chip mounted on the circuit board, electrically connected to the first and second electrode structures, and configured to emit ultraviolet light; metal patterns spaced apart from the first and second electrode structures on the circuit board; an adhesive pattern disposed on the circuit board, in contact with the metal patterns on at least one surface, and having an upper surface disposed at a level below the lower surface of the light-emitting diode chip; a sidewall structure disposed on the circuit board and providing a cavity surrounding the light-emitting diode chip; and a cover disposed on the sidewall structure to seal the cavity.

[0010] One embodiment of the present disclosure provides a semiconductor light-emitting device package comprising: a substrate; a light-emitting diode chip mounted on the upper surface of the substrate; a protective body disposed on the upper surface of the substrate and providing a cavity surrounding the light-emitting diode chip; and a dummy pattern and an adhesive pattern interposed between the upper surface of the substrate and the lower surface of the protective body. Effects of the invention

[0012] By designing the structure of the package so that light emitted from the light-emitting diode chip is not irradiated onto the adhesive pattern interposed between the substrate on which the light-emitting diode chip is mounted and the protective body providing the cavity (mounting space) surrounding the light-emitting diode chip, it is possible to provide a semiconductor light-emitting device package with a highly reliable structure.

[0013] The various and beneficial advantages and effects of the present invention are not limited to those described above and will be more easily understood in the process of explaining specific embodiments of the present invention. Brief explanation of the drawing

[0015] FIG. 1 is a plan view of a semiconductor light-emitting device package according to one embodiment of the present invention. FIG. 2 is a side cross-sectional view taken by cutting the semiconductor light-emitting device package shown in FIG. 1 along I-I'. FIG. 3 is a side cross-sectional view taken by enlarging a portion of the semiconductor light-emitting device package shown in FIG. 2. FIG. 4 is a cross-sectional view showing an ultraviolet LED that can be employed in a semiconductor light-emitting device package according to one embodiment of the present invention. FIG. 5 is a side cross-sectional view of a semiconductor light-emitting device package according to one embodiment of the present invention. FIGS. 6a and 6b are magnified cross-sectional views of a portion of a semiconductor light-emitting device package. FIG. 7 is a side cross-sectional view of a semiconductor light-emitting device package according to one embodiment of the present invention. FIG. 8 is a side cross-sectional view of a semiconductor light-emitting device package according to one embodiment of the present invention. FIG. 9 is a perspective view of a semiconductor light-emitting device package according to one embodiment of the present invention. FIG. 10 is a side cross-sectional view of a semiconductor light-emitting device package according to one embodiment of the present invention. FIGS. 11 to 14 are plan views by process to explain a method for manufacturing a semiconductor light-emitting device package according to one embodiment of the present invention. Specific details for implementing the invention

[0016] Hereinafter, preferred embodiments of the present invention will be described as follows with reference to the attached drawings.

[0018] FIG. 1 is a plan view of a semiconductor light-emitting device package according to one embodiment of the present invention.

[0019] FIG. 2 is a side cross-sectional view taken by cutting the semiconductor light-emitting device package shown in FIG. 1 along I-I'.

[0020] FIG. 3 is an enlarged cross-sectional view of region "A" of the semiconductor light-emitting device package shown in FIG. 2.

[0022] Referring to FIGS. 1 to 3, a semiconductor light-emitting device package (100) according to the present embodiment may include a circuit board (110) having first and second electrode structures (E1, E2), a light-emitting diode (LED) chip (120) mounted on the circuit board (110) and electrically connected to the first and second electrode structures (E1, E2), metal patterns (130) spaced apart from the first and second electrode structures (E1, E2) on the circuit board (110), an adhesive pattern (140) placed between the metal patterns (130), and a protective body (150) that is placed on the circuit board (110) and provides a cavity (C) surrounding the LED chip (120).

[0024] The circuit board (110) may include a plate-shaped ceramic body (111). The ceramic body (111) may include a ceramic material having a thermal conductivity of 100 W / m·K or higher. For example, the ceramic body (111) may include aluminum nitride, aluminum oxide, or silicon carbide. In some embodiments, aluminum nitride may be used as the ceramic body (111), and aluminum nitride may ensure a high thermal conductivity of 150 W / m·K or higher.

[0025] The first and second electrode structures (E1, E2) may each include first and second upper pads (115a, 115b) disposed on the upper surface of the ceramic body (111), first and second lower pads (112a, 112b) disposed on the lower surface of the ceramic body (111), and first and second penetrating electrodes (114a, 114b) that penetrate the ceramic body (111) and connect the first and second upper pads (115a, 115b) and the first and second lower pads (112a, 112b), respectively. For example, the first and second upper pads (115a, 115b), the first and second through electrodes (114a, 114b), and the first and second lower pads (112a, 112b) may comprise a conductive material such as gold (Au), silver (Ag), copper (Cu), zinc (Zn), aluminum (Al), indium (In), titanium (Ti), silicon (Si), germanium (Ge), tin (Sn), magnesium (Mg), tantalum (Ta), chromium (Cr), tungsten (W), ruthenium (Ru), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), etc., in a single layer or multilayer structure.

[0026] In some embodiments, the first and second upper pads (115a, 115b), the first and second through electrodes (114a, 114b), and the first and second lower pads (112a, 112b) may each be manufactured separately, but in other embodiments, they may be manufactured at once through a batch process. For example, the first and second electrode structures (E1, E2) may be formed by a plating process using a metal such as copper (Cu). Additionally, for example, the first and second upper pads (115a, 115b) may include a copper (Cu) plating layer and gold / nickel (Au / Ni) or gold / palladium / nickel (Au / Pd / Ni) laminated on the copper (Cu) plating layer.

[0028] The LED chip (120) may include first and second electrodes (129a, 129b) disposed on one side facing the upper surface of the circuit board (110). The first and second electrodes (129a, 129b) of the LED chip (120) may be connected to the first and second upper pads (115a, 115b), respectively, by connecting bumps (139a, 139b).

[0029] The LED chip (120) may be configured to emit light of a specific wavelength band. In some embodiments, the LED chip (120) may be configured to emit ultraviolet light in a wavelength range of 100 nm to 400 nm. The structure of such an ultraviolet LED chip will be described later with reference to FIG. 4.

[0030] In a specific example, the LED chip (120) may be configured to emit deep ultraviolet (UV-C) light for sterilization and disinfection. This deep ultraviolet light may have a wavelength range of 200 nm to 280 nm. When this ultraviolet light is irradiated onto resin-based adhesive materials, such as silicone resin, epoxy resin, and acrylic resin, which are mainly used as adhesive layers, it may decompose the chemical bonds of the materials listed above, thereby inducing cracks or discoloration. Accordingly, there may be limitations in employing resin-based adhesive materials as adhesive layers of semiconductor light-emitting device packages. However, since the semiconductor light-emitting device package (100) according to the present embodiment has a structure in which ultraviolet light is not directly irradiated onto the adhesive pattern (140), the adhesive strength is not damaged even when the adhesive pattern (140) includes a resin-based adhesive material, so the reliability of the semiconductor light-emitting device package (100) can be improved.

[0032] Metal patterns (130) may be spaced apart from the first and second electrode structures (E1, E2) on the circuit board (110). The metal patterns (130) may be dummy patterns that are not electrically connected to the LED chip (120). In some embodiments, the metal patterns (130) may include two or more metal patterns, for example, a first metal pattern (131) and a second metal pattern (132). In certain embodiments, the first and second metal patterns (131, 132) are spaced apart from each other and may be arranged to surround the first and second electrode structures (E1, E2) from the outside of the first and second electrode structures (E1, E2). However, the shape, position, etc. of the first and second metal patterns (131, 132) are not limited thereto and may be changed depending on the size of the package, the required adhesive strength, the arrangement of the electrode structures, etc. For example, the first and second metal patterns (131, 132) may each include a plurality of discontinuous metal lines, or have a ladder shape connected to each other in at least some parts.

[0033] The metal patterns (130) may include, for example, at least one of copper (Cu), aluminum (Al), nickel (Ni), silver (Ag), gold (Au), platinum (Pt), tin (Sn), lead (Pb), titanium (Ti), chromium (Cr), palladium (Pd), indium (In), zinc (Zn), and carbon (C), but are not limited thereto. In some embodiments, the metal patterns (130) may include the same metal as the metal layer of the first and second upper pads (115a, 115b).

[0035] The adhesive pattern (140) may be placed between the first and second metal patterns (131, 132) on the circuit board (110). In some embodiments, at least one side of the adhesive pattern (140) may be in contact with one side of the first and second metal patterns (131, 132). In certain embodiments, both sides of the adhesive pattern (140) may be in contact with one side of the first and second metal patterns (131, 132), respectively.

[0036] The adhesive pattern (140) may include a resin-based adhesive material such as silicone resin, epoxy resin, or acrylic resin, a metal layer, water glass, etc. If the adhesive pattern (140) includes a resin-based adhesive material, the chemical bonds of the adhesive pattern (140) may be broken down by ultraviolet light, thereby inducing cracks or discoloration. According to one embodiment of the present invention, the upper surface of the adhesive pattern (140) may be placed at the same level as the lower surface of the LED chip (120) or at a lower level than the lower surface of the LED chip (120). That is, as shown in FIG. 3, the distance (t1) from the upper surface of the ceramic body (111) to the upper surface of the adhesive pattern (140) may be less than or equal to the distance (t2) from the upper surface of the ceramic body (111) to the lower surface of the LED chip (120). As a result, the ultraviolet light emitted from the LED chip (120) is not directly irradiated onto the adhesive pattern (140), so the adhesive pattern (140) can be protected from the ultraviolet light.

[0037] In some embodiments, the lower surface of the adhesive pattern (140) may be in contact with the ceramic body (111), both sides of the adhesive pattern (140) may be in contact with one side of the metal patterns (131, 132), and the upper surface of the adhesive pattern (140) may be in contact with the lower surface of the protective body (150). That is, the adhesive pattern (140) may be capped by the ceramic body (111), the metal patterns (131, 132), and the protective body (150). As a result, ultraviolet light emitted from the LED chip (120) is not irradiated onto the adhesive pattern (140), so damage to the adhesive pattern (140) by ultraviolet light can be more reliably prevented. This can improve the reliability of the semiconductor light-emitting device package (100).

[0038] In some embodiments, the thickness of the adhesive pattern (140) in a direction perpendicular to the upper surface of the ceramic body (111) (e.g., z-direction) may be in the range of about 5 μm to about 100 μm. If the thickness of the adhesive pattern (140) is less than the above range, the adhesion between the ceramic body (111) and the protective body (150) may not be sufficient. If the thickness of the adhesive pattern (140) exceeds the above range, it may be disadvantageous for miniaturization of the package or result in process inefficiency. In some embodiments, the upper surface of the adhesive pattern (140) may be substantially coplanar with the upper surfaces of the first and second metal patterns (131, 132).

[0040] The protective body (150) is placed on the circuit board (110) and may include a cavity (C) surrounding the LED chip (120). The protective body (150) may be bonded to the circuit board (110), and such bonding may be implemented by an bonding pattern (140). The cavity (C) formed by the protective body (150) may be provided as a mounting space for the LED chip (120) that is sealed to prevent the penetration of external moisture, etc.

[0041] The protective body (150) may include a sidewall structure (151) and a cover (152). The sidewall structure (151) and the cover (152) may include different materials. For example, the sidewall structure (151) may include silicon, and the cover (152) may include high-purity silicon oxide (SiO-2). In some embodiments, the sidewall structure (151) and the cover (152) may be joined by direct bonding. For example, the upper surface of the sidewall structure (151) and the lower surface of the cover (152) may be joined by anodic bonding, fusion bonding, plasma activation bonding, etc. The inner sidewall of the sidewall structure (151) may form an angle of 90° or less with respect to the lower surface of the sidewall structure (151). In some embodiments, the inner side wall of the side wall structure (151) may be inclined with respect to the lower surface, for example, the angle formed by the inner side wall of the side wall structure (151) with the lower surface may be in the range of about 55° to about 75°. This allows light emitted from the LED chip (120) and irradiated onto the inner side of the side wall structure (151) to be reflected toward the cover (152), thereby minimizing the light irradiated onto the adhesive pattern (140).

[0043] The semiconductor light-emitting device package (100) may further include a reflective layer (170) disposed on the inner side of the sidewall structure (151). The reflective layer (170) may include a material with a higher reflectivity than the sidewall structure (151). For example, the sidewall structure (151) may be formed of silicon with relatively low reflectivity, and a reflective layer (170) containing a material with high reflectivity, such as aluminum (Al) or gold (Au), may be disposed on the inner side of the sidewall structure (151). As a result, light emitted from the LED chip (120) and irradiated onto the sidewall structure (151) may be reflected toward the cover (152) by the reflective layer (170). This allows for more effective prevention of light irradiating onto the adhesive pattern (140).

[0044] In a specific embodiment, a protective layer (not shown) comprising at least one of silicon oxide (SiO2), aluminum oxide (Al2O3), aluminum nitride (AlN) and silicon nitride (Si3N4) may be additionally provided on the surface of the reflective layer (170) to prevent the reflective layer (170) from oxidizing.

[0046] FIG. 4 is a cross-sectional view showing an ultraviolet LED chip that can be employed in a semiconductor light-emitting device package according to one embodiment of the present invention.

[0048] An ultraviolet LED chip (120) that can be employed in the present embodiment includes a substrate (121) and a semiconductor stack (SL) disposed on the substrate (121) and configured to emit ultraviolet light. The semiconductor stack (SL) includes first and second conductive semiconductor layers (123, 127) and an active layer (125) disposed between the first and second conductive semiconductor layers (123, 127).

[0049] The substrate (121) may be an insulating, conductive, or semiconductor substrate as a growth substrate for a semiconductor laminate (SL). For example, the substrate (121) may be sapphire, AlN, SiC, MgAl2O4, MgO, LiAlO2, or LiGaO2. The semiconductor laminate (SL) employed in this embodiment may include a buffer layer (122) for growing a high-quality AlGaN semiconductor on the substrate (121). For example, the buffer layer (122) may be formed of a nitride such as AlN or AlGaN. The first conductive semiconductor layer (123) is Al x1 Ga 1-x1 N (0 <x1≤1)로 표시되는 n형 질화물 반도체일 수 있으며, n형 불순물은 Si일 수 있다. 예를 들어, 상기 제1 도전형 반도체층(123)은 n형 AlGaN을 포함할 수 있다. 상기 제2 도전형 반도체층(127)은 Al x2 Ga 1-x2 N (0 <x2≤1)로 표시되는 p형 질화물 반도체일 수 있으며, p형 불순물은 Mg일 수 있다. 예를 들어, 상기 제2 도전형 반도체층(127)은 p형 AlGaN을 포함할 수 있다. 일 예에서, 상기 제1 및 제2 도전형 반도체층(123,127)의 Al 조성비(x1,x2)는 0.45~0.99 범위일 수 있으며, 나아가 상기 제1 및 도전형 반도체층(123)의 Al 조성비(x1)는 0.60~0.65 범위일 수 있으며, 제2 도전형 반도체층(127)의 Al 조성비(x1,x2)는 0.75~0.85 범위일 수 있다.

[0050] The active layer (125) employed in this embodiment is Al x3 Ga 1-x3 N(0 <x3<1)로 이루어진 양자우물을 가질 수 있다. 상기 활성층(125)은 하나의 양자우물을 갖는 단일양자우물구조(single-quantum well, SQW)일 수 있으나, 이에 한정되지 않으며 상기 활성층(25)은, Al xa Ga 1-xaN(0 <xa<1)로 이루어진 복수의 양자우물층과 Al xb Ga 1-xb N(xa <xb<1)로 이루어진 복수의 양자장벽층이 교대로 적층된 다중양자우물구조(muti-quantum well, MQW)일 수 있다.

[0051] The quantum well of the active layer (125) has a bandgap that determines the wavelength of ultraviolet light, and the active layer (125) employed in this embodiment may be configured to emit light having a wavelength of 100 nm to 400 nm or a wavelength of 100 nm to 300 nm. The first and second conductivity semiconductor layers (123, 127) have a bandgap larger than the bandgap of the quantum well so that ultraviolet light generated from the active layer (125) is not absorbed. For example, the Al composition ratio (x3 or xa) of the quantum well may be smaller than the Al composition ratio (x1, x2) of the first and second conductivity semiconductor layers (123, 127). In one example, the Al composition ratio (x3 or xa) of the quantum well may be in the range of 0.4 to 1.00, and the Al composition ratio may be adjusted according to the desired wavelength.

[0052] Since it is difficult to form an ohmic contact with a conventional electrode material when the second conductivity semiconductor layer (127) is composed of p-type AlGaN, the semiconductor stack (SL) employed in this embodiment may include a second conductivity contact layer (128) formed on the second conductivity semiconductor layer (127) and having a relatively low bandgap. The Al composition ratio of the second conductivity contact layer (128) is smaller than the Al composition ratio (x2) of the second conductivity semiconductor layer (127), and may include, for example, p-type GaN.

[0053] The ultraviolet LED chip (120) according to the present embodiment includes first and second electrodes (129a, 129b) respectively connected to the first and second conductive semiconductor layers (123, 127). The semiconductor stack (SL) has a region in which the second conductive semiconductor layer (127) and the active layer (125) are partially removed to expose a region of the first conductive semiconductor layer (123). The first electrode (129a) may be placed on the exposed region of the first conductive semiconductor layer (123). For example, the first and second electrodes (129a, 129b) may be a multilayer structure formed of Al, Ti, Ni, Cr, Au, Ag, or ITO, or composed of a combination thereof. For example, the first electrode (129a) may include Ti / Al / Ni / Au, and the second electrode (129b) may include Ag or Ni / Au.

[0054] In addition to the ultraviolet LED chip shown in FIG. 4, LED chips of various structures may be used. For example, ultraviolet LED chips or devices described in Korean Patent Application 10-2017-0175149 (Application Date: Dec. 19, 2017, Applicant: Samsung Electronics Co., Ltd., US 10333025 B1), Korean Patent Application 10-2017-0175150 (Application Date: Dec. 19, 2017, Applicant: Samsung Electronics Co., Ltd., US 10483433 B2), and Korean Patent Application 10-2017-0171131 (Application Date: Dec. 13, 2017, Applicant: Samsung Electronics Co., Ltd., US 10862004 B2) may be used as semiconductor light-emitting devices according to the present embodiment.

[0056] FIG. 5 is a perspective view of a semiconductor light-emitting device package according to one embodiment of the present invention, FIG. 6a is an enlarged cross-sectional view of region “B” of the semiconductor light-emitting device package shown in FIG. 5, FIG. 6b is an enlarged cross-sectional view of a part of the semiconductor light-emitting device package according to one embodiment.

[0058] Referring to FIGS. 5, 6a, and 6b, the semiconductor light-emitting device package (100A) according to the present embodiment may be understood to be similar to the semiconductor light-emitting device package (100) shown in FIGS. 1 to 3, except that the shape and position of the metal pattern (130A) and the adhesive pattern (140A) are different. Unless specifically stated otherwise, the description of the components of the present embodiment may refer to the description of identical or similar components of the semiconductor light-emitting device package (100) shown in FIGS. 1 to 3.

[0059] In this embodiment, the metal pattern (130A) comprises a single metal layer, and the adhesive pattern (140A) may be arranged to overlap the metal pattern (130A) on the upper surface of the metal pattern (130A). The adhesive pattern (140A) employed in this embodiment differs from the embodiment shown in FIGS. 1 to 3 in that it is not capped by adjacent components.

[0061] In the embodiment illustrated in FIGS. 5 and 6a, the upper surface of the metal pattern (130A) may be positioned at a level lower than the upper surface of the first and second upper pads (115a, 115b). The upper surface of the adhesive pattern (140A) may be positioned at a level lower than the lower surface of the LED chip (120). That is, the gap (t in FIG. 6a) from the upper surface of the ceramic body (111) to the upper surface of the adhesive pattern (140A). 1A ) is the distance from the upper surface of the ceramic body (111) to the lower surface of the LED chip (120) (t in FIG. 6a). 2A ) may be less than. By controlling the shape and position of the metal pattern (130A) and the adhesive pattern (140A) in this way, ultraviolet light emitted from the LED chip (120) can be prevented from being irradiated onto the adhesive pattern (140A). Since the adhesive pattern (140A) is protected from ultraviolet light, the reliability of the semiconductor light-emitting device package (100A) can be improved.

[0062] In another embodiment, as shown in FIG. 6b, the upper surface of the metal pattern (130A') may be positioned at the same level as the upper surface of the first and second upper pads (115a, 115b). The upper surface of the adhesive pattern (140A') may be positioned at a level above the lower surface of the LED chip (120) or at a level between the upper and lower surfaces of the LED chip (120). If the upper surface of the adhesive pattern (140A') is positioned at a level between the upper and lower surfaces of the LED chip (120), the upper surface of the adhesive pattern (140A') may be positioned at a level below the midpoint between the upper and lower surfaces of the LED chip (120). For example, the gap (t) between the lower surface of the LED chip (120) and the upper surface of the adhesive pattern (140A') may be about 150 μm or less. By having the gap (t) between the lower surface of the LED chip (120) and the upper surface of the adhesive pattern (140A') within the above range, it is possible to secure adhesion between the ceramic body (111) and the protective body (150), while preventing ultraviolet light emitted from the LED chip (120) from being directly irradiated onto the adhesive pattern (140A').

[0064] In this embodiment, the metal pattern (130A) and the adhesive pattern (140A) are shown to have the same width in the x direction, but are not limited thereto. In some embodiments, the widths in the x direction of the metal pattern (130A) and the adhesive pattern (140A) may be different, for example, the width in the x direction of the adhesive pattern (140A) may be smaller than the width in the x direction of the metal pattern (130A).

[0066] FIG. 7 is a side cross-sectional view of a semiconductor light-emitting device package according to one embodiment of the present invention.

[0068] Referring to FIG. 7, the semiconductor light-emitting device package (100B) according to the present embodiment may be understood to be similar to the semiconductor light-emitting device package (100) shown in FIG. 1 to 3, except that the number of metal patterns (130B) and adhesive patterns (140B) is different. Unless specifically stated otherwise, the description of the components of the present embodiment may refer to the description of identical or similar components of the semiconductor light-emitting device package (100) shown in FIG. 1 to 3.

[0069] The metal patterns (130B) employed in this embodiment may include first to third metal patterns (131B, 132B, 133B), and the adhesive patterns (140B) may include first and second adhesive patterns (141B, 142B). In this embodiment, the first adhesive pattern (141B) may be positioned between the first and second metal patterns (131B, 132B) such that both sides of the first and second metal patterns (131B, 132B) are in contact with the sides of the second and third metal patterns (132B, 133B). The second adhesive pattern (142B) may be positioned between the second and third metal patterns (132B, 133B) such that both sides of the second and third metal patterns (132B, 133B) are in contact with the sides of the second and third metal patterns (132B, 133B).

[0070] In this embodiment, the first and second adhesive patterns (141B, 142B) may include adhesive materials such as silicone, epoxy, and acrylic. These resin-based adhesive layers can release stress caused by a mismatch in the coefficient of thermal expansion due to the elastic modulus. In addition, the second metal pattern (132B) placed between the first and second adhesive patterns (141B, 142B) acts as a reinforcing material, thereby improving the structural stability of the semiconductor light-emitting device package (100B). That is, according to this embodiment, there is an advantage in that the structural stability of the package can be improved by improving warpage while maintaining the adhesive strength of the protective body (150) to improve reliability.

[0072] FIG. 8 is a side cross-sectional view of a semiconductor light-emitting device package according to one embodiment of the present invention.

[0073] Referring to FIG. 8, the semiconductor light-emitting device package (100C) according to the present embodiment may be understood to be similar to the semiconductor light-emitting device package (100) shown in FIG. 1 to 3, except that it does not include metal patterns (130) and the shape of the reflective layer (170') is different. Unless specifically stated otherwise, the description of the components of the present embodiment may refer to the description of identical or similar components of the semiconductor light-emitting device package (100) shown in FIG. 1 to 3.

[0075] The adhesive pattern (140C) employed in this embodiment may be placed within a recess (RE) formed in the ceramic body (111). Accordingly, a sufficient gap can be secured between the upper surface of the adhesive pattern (140C) and the LED chip (120). The upper surface of the adhesive pattern (140C) may be substantially co-surface with the upper surface of the ceramic body (111). The thickness along the z-direction of the recess (RE) may be in the range of about 20% to about 80% of the thickness along the z-direction of the ceramic body (111). If the thickness along the z-direction of the recess (RE) falls below the above range, sufficient adhesive force may not be secured by the adhesive pattern (140C). If the thickness along the z-direction of the recess (RE) exceeds the above range, the ceramic body (111) may become brittle.

[0076] The reflective layer (170') employed in this embodiment may include a first portion (170a) disposed on the inner side of the sidewall structure (151) and a second portion (170b) disposed on the lower surface of the sidewall structure (151). The first and second portions (170a, 170b) may include a highly reflective material such as aluminum (Al) or gold (Au), and the second portion (170b) may be formed integrally by extending from the first portion (170a). The adhesive pattern (140C) may be separated from the sidewall structure (151) by the first and second portions (170a, 170b) of the reflective layer (170'). Even when some of the ultraviolet light emitted from the LED chip (120) is reflected by the inner surface of the cover (152) and the sidewall structure (151) and reaches the lower surface of the sidewall structure (151), the second part (170b) reflects the ultraviolet light on the adhesive pattern (140C), thereby preventing the ultraviolet light from being irradiated onto the adhesive pattern (140C). Therefore, damage to the adhesive pattern (140C) is prevented, and the reliability of the semiconductor light-emitting device package (100C) can be improved. The structure and shape of the reflective layer (170') are not limited to this embodiment and may be applied in the same or similar way to other embodiments.

[0078] FIG. 9 is a perspective view of a semiconductor light-emitting device package according to one embodiment of the present invention.

[0079] FIG. 10 is a side cross-sectional view of a semiconductor light-emitting device package according to one embodiment of the present invention.

[0081] Referring to FIGS. 9 and 10, the semiconductor light-emitting device package (100D) according to the present embodiment may be understood to be similar to the semiconductor light-emitting device package (100) illustrated in FIGS. 1 to 3, except that the side wall structure (151D) constituting the protective body (150D) and the cover (152D) are bonded through a second adhesive pattern (160). Unless specifically stated otherwise, the description of the components of the present embodiment may refer to the description of identical or similar components of the semiconductor light-emitting device package (100) illustrated in FIGS. 1 to 3.

[0083] The protective body (150D) employed in this embodiment may be formed by bonding a sidewall structure (151D) and a cover (152D) by a second adhesive pattern (160). For example, the second adhesive pattern (160) may be interposed between the upper surface of the sidewall structure (151D) and the lower surface of the cover (152D). The second adhesive pattern (160) may include a resin-based adhesive material such as silicone, epoxy, acrylic, etc. However, if an LED chip for ultraviolet light is used as the LED chip (120), glass frit or solder may be used.

[0085] FIGS. 11 to 14 are plan views by process to explain a method for manufacturing a semiconductor light-emitting device package according to one embodiment of the present invention.

[0087] Referring to FIG. 11, a base substrate (110S) is provided in which a plurality of circuit boards (110) illustrated in FIG. 2 are implemented.

[0088] The base substrate (110S) may include a ceramic body (111). For example, the ceramic body (111) may include aluminum nitride, aluminum oxide, or silicon carbide. In some embodiments, the ceramic body (111) may include aluminum nitride, which has excellent heat dissipation performance.

[0089] First and second electrode structures (E1, E2) may be formed in each circuit board region. The first and second electrode structures (E1, E2) may each include first and second upper pads (115a, 115b) disposed on the upper surface of the ceramic body (111), first and second lower pads (112a, 112b) disposed on the lower surface of the ceramic body (111), and first and second penetrating electrodes (114a, 114b) that penetrate the ceramic body (111) and connect the first and second upper pads (115a, 115b) and the first and second lower pads (112a, 112b), respectively. The first and second electrode structures may comprise a single layer or a multilayer structure of a conductive material such as gold (Au), silver (Ag), copper (Cu), zinc (Zn), aluminum (Al), indium (In), titanium (Ti), silicon (Si), germanium (Ge), tin (Sn), magnesium (Mg), tantalum (Ta), chromium (Cr), tungsten (W), ruthenium (Ru), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), or platinum (Pt). The first and second electrode structures (E1, E2) may be formed by a plating process using a metal such as copper (Cu).

[0091] Referring to FIG. 12, a plurality of LED chips (120) are each mounted on a base substrate (110S).

[0092] A plurality of LED chips (120) can be mounted on a base substrate (110S) such that the first and second electrodes (129a, 129b) of the LED chips (120) are respectively connected to the first and second upper pads (115a, 115b) using connection bumps (139a, 139b). In this embodiment, the connection is illustrated as being made using a flip-chip bonding method, but the flip-chips may also be directly bonded without connection bumps (139a, 139b) (e.g., eutectic bonding method). Flux may be used for such eutectic bonding. Although not shown in the drawings, in other embodiments, the LED chips may be bonded using wires.

[0094] Referring to FIG. 13, metal patterns (130) can be formed on a base substrate (110S).

[0095] In this embodiment, the metal patterns (130) may include a first metal pattern (131) and a second metal pattern (132). The first and second metal patterns (131, 132) may be formed to be spaced apart from the first and second electrode structures (E1, E2) and the LED chip (120). The first and second metal patterns (131, 132) may be dummy patterns. The first and second metal patterns (131, 132) may include the same or different material as the first and second electrode structures (E1, E2). For example, the first and second metal patterns (131, 132) may include, but are not limited to, conductive materials such as gold (Au), silver (Ag), copper (Cu), zinc (Zn), aluminum (Al), indium (In), titanium (Ti), silicon (Si), germanium (Ge), tin (Sn), magnesium (Mg), tantalum (Ta), chromium (Cr), tungsten (W), ruthenium (Ru), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), or platinum (Pt).

[0096] The first and second metal patterns (131, 132) may be formed spaced apart from each other. However, in some embodiments, the first metal pattern (131) may be connected to the second metal pattern (132) in at least a portion. For example, the metal patterns (130) may further include a cross-linking portion (not shown) connecting the first metal pattern (131) and the second metal pattern (132). The spacing between the first and second metal patterns (131, 132) may be greater than or equal to the width in the x-direction of the first and second metal patterns (131, 132), but is not limited thereto. The spacing between the first and second metal patterns (131, 132) may be controlled differently depending on the material of the adhesive pattern, the size of the protective body, the type of substrate, etc.

[0097] The first and second metal patterns (131, 132) may be formed with a thickness of about 5 μm to about 100 μm. For example, the first and second metal patterns (131, 132) may be formed with a thickness of about 25 μm to about 35 μm. The upper surface of the first and second metal patterns (131, 132) may be placed at the same level as the lower surface of the LED chip (120), or at a level lower than the lower surface of the LED chip (120).

[0098] The order of the process of bonding the LED chip (120) (Fig. 12) and the process of forming the first and second metal patterns (131, 132) (Fig. 13) can be changed. For example, it is possible to form the first and second metal patterns (131, 132) first, and then bond the LED chip (120) onto the base substrate (110S).

[0100] Referring to FIG. 14, an adhesive pattern (140) can be formed between the first and second metal patterns (131, 132).

[0101] The adhesive pattern (140) employed in this embodiment may be formed such that both sides are in contact with one side of each of the first and second metal patterns (131, 132). Additionally, the upper surface of the adhesive pattern (140) may be formed to substantially co-plane with the upper surfaces of the first and second metal patterns (131, 132). The upper surface of the adhesive pattern (140) may be positioned at the same level as the lower surface of the LED chip (120), or at a level lower than the lower surface of the LED chip (120). As a result, light emitted from the LED chip (120) is not irradiated onto the adhesive pattern (140), so even when a resin-based adhesive material is used as the adhesive pattern (140), the effect of maintaining adhesive strength and improving the reliability of the package can be obtained.

[0102] The protective body (150) may be attached to the base substrate (110S) by an adhesive pattern (140). The protective body (150) may be formed by attaching a cover (152) to the upper surface of the sidewall structure (151). A reflective layer (170) including aluminum (Al), gold (Au), etc., may be disposed on the inner side surface of the sidewall structure (151). In this embodiment, the protective body (150) is disposed to cover the upper surface of both the first and second metal patterns (131, 132), but is not limited thereto. For example, the protective body (150) may be disposed to cover at least a portion of the upper surface of the first and second metal patterns (131, 132).

[0103] The adhesive pattern (140) can be capped by the upper surface of the base substrate (110S), the sides of the first and second metal patterns (131, 132), and the lower surface of the protective body (150). By doing so, the adhesive pattern (140) can be more effectively sealed from light emitted from the LED chip (120), thereby preventing the disintegration or damage of the adhesive pattern (140).

[0104] Next, by using a saw (D) to cut along the cutting line (CL) into individual semiconductor ultraviolet light-emitting elements, a semiconductor light-emitting element package (100) illustrated in FIG. 2 can be manufactured.

[0106] The present invention is not limited by the embodiments described above and the attached drawings, but is intended to be limited by the appended claims. Accordingly, various substitutions, modifications, and changes may be made by those skilled in the art within the scope of the technical concept of the present invention as described in the claims, and such are also to be considered to fall within the scope of the present invention. Explanation of the symbols

[0108] 100: Semiconductor light-emitting diode package 110: Circuit board 111: Ceramic substrate E1,E2: Electrode structure 112a, 112b: Lower pads 114a, 114b: Through electrodes 115a, 115b: Upper pads 129a, 129b: Electrodes 139a, 139b: Connection bumps 120: Light-emitting diode (LED) chip 130: Metal patterns 140: (1st) Adhesive pattern 150: Protective body 151: Sidewall structure 152: Cover 160: Second adhesive pattern 170: Reflective layer C: Cavity

Claims

Claim 1 A semiconductor light-emitting device package comprising: a ceramic substrate having first and second electrode structures; a light-emitting diode chip mounted on the ceramic substrate, electrically connected to the first and second electrode structures, and configured to emit ultraviolet light; metal patterns spaced apart from the first and second electrode structures on the ceramic substrate; an adhesive pattern disposed between adjacent metal patterns on the ceramic substrate, having two sides in contact with one side of the metal patterns and an upper surface located at a level below the lower surface of the light-emitting diode chip; and a protective body attached to the ceramic substrate by the adhesive pattern and providing a cavity surrounding the light-emitting diode chip. Claim 2 In claim 1, the adhesive pattern comprises at least one of silicone resin, epoxy resin, and acrylic resin in a semiconductor light-emitting device package. Claim 3 A semiconductor light-emitting device package according to claim 1, wherein the thickness of the adhesive pattern in a direction perpendicular to the upper surface of the ceramic substrate is 5㎛ to 100㎛. Claim 4 In claim 1, the protective body has an inner side defining the cavity, and the protective body further comprises a reflective layer disposed on the inner side, in a semiconductor light-emitting device package. Claim 5 In claim 4, the above-mentioned reflective layer comprises at least one of aluminum (Al) and gold (Au) in a semiconductor light-emitting device package. Claim 6 A semiconductor light-emitting device package comprising: a ceramic substrate and a circuit board having first and second electrode structures penetrating the ceramic substrate; a light-emitting diode chip mounted on the circuit board, electrically connected to the first and second electrode structures, and configured to emit ultraviolet light; metal patterns spaced apart from the first and second electrode structures on the circuit board; a first adhesive pattern disposed between adjacent metal patterns on the circuit board; a sidewall structure that is adhered to the circuit board by the first adhesive pattern and provides a cavity surrounding the light-emitting diode chip; and a cover disposed on the sidewall structure to seal the cavity, wherein the first adhesive pattern is capped by the metal patterns, the sidewall structure, and the ceramic substrate. Claim 7 A semiconductor light-emitting device package according to claim 6, further comprising a second adhesive pattern interposed between the sidewall structure and the cover, wherein the second adhesive pattern comprises a solder or a glass frit. Claim 8 In claim 6, the light-emitting diode chip is a semiconductor light-emitting device package that emits ultraviolet light in a wavelength range of 260 nm to 280 nm. Claim 9 A semiconductor light-emitting diode package comprising: a circuit board; a light-emitting diode chip mounted on the upper surface of the circuit board; a protective body providing a cavity surrounding the light-emitting diode chip, wherein the protective body includes a sidewall structure disposed to surround the light-emitting diode chip on the upper surface of the circuit board, and a cover disposed on the upper portion of the sidewall structure; and a metal pattern and an adhesive pattern interposed between the upper surface of the circuit board and the lower portion of the sidewall structure of the protective body. Claim 10 A semiconductor light-emitting device package according to claim 9, wherein the lower surface of the light-emitting diode chip is positioned at a height of a first level, the upper surface of the adhesive pattern is positioned at a height of a second level greater than or equal to the first level, and the first level and the second level have a height difference of 0 or more and 150 μm or less.

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