Temperature control device of substrate mounting board and apparatus for processing substrate including the same

Abstract

The technical concept of the present invention is a substrate processing device for improving the lifespan of a mounting plate by preventing the temperature of the mounting plate from dropping to an ultra-low temperature. The substrate processing device of the present invention comprises a chamber having an internal processing space, a substrate support including a mounting plate on which a substrate is mounted, a plasma generating device configured to generate plasma, and a mounting plate temperature control unit that controls the flow rate of a refrigerant to prevent the temperature of the mounting plate from dropping to an ultra-low temperature.

Description

Technology Field

[0001] The technical concept of the present invention relates to a substrate temperature control device and a substrate processing device including the same. Background Technology

[0002] Generally, semiconductor devices are manufactured through multiple unit processes including thin film deposition and etching processes, and the etching process is primarily performed using a plasma etching device in which a plasma reaction is induced.

[0003] In a plasma etching device, the substrate being processed is controlled to a predetermined temperature. Since the substrate is heated by plasma, it is necessary to cool the substrate to maintain its temperature at a predetermined level during the plasma-based process. For example, the supported substrate is cooled by circulating a coolant at a temperature lower than room temperature inside the substrate support.

[0004] Recently, plasma etching can be performed at cryogenic temperatures to ensure high selectivity when forming structures with a high aspect ratio or etching substrates using photoresist films. In such cryogenic processes, a cryogenic coolant must be supplied to maintain the substrate temperature.

[0005] This cryogenic refrigerant is supplied even into the atmosphere of the plasma etching process, causing the substrate supports to be subjected to thermal shock due to supercooling. Continuous thermal shock to the substrate supports leads to a reduction in their lifespan. . The problem to be solved

[0006] The problem that the technical concept of the present invention aims to solve is to provide a substrate mounting plate temperature control device capable of optimally maintaining the temperature of a substrate mounting plate, and a substrate processing device including the same.

[0007] Furthermore, the problems that the technical concept of the present invention aims to solve are not limited to those mentioned above, and other problems can be clearly understood by a person skilled in the art from the description below. means of solving the problem

[0008] To solve the aforementioned problem, the technical concept of the present invention provides a substrate processing device that controls the flow rate of a refrigerant by measuring the temperature of a mounting plate, comprising: a chamber having a processing space inside; a substrate support including a mounting plate on which a substrate is mounted in the processing space; a plasma generating device that generates plasma using a process gas; and a mounting plate temperature control unit that controls the temperature of the mounting plate by supplying a refrigerant to one side of the substrate through the mounting plate. The mounting plate temperature control unit comprises a refrigerant supply unit that supplies the refrigerant, a refrigerant supply pipe that connects the refrigerant supply unit to the mounting plate to deliver the refrigerant to the mounting plate, a flow rate control device that controls the flow rate of the refrigerant delivered to the mounting plate, and a mounting plate temperature measuring device that measures the temperature of the mounting plate.

[0009] To solve the aforementioned problem, the technical concept of the present invention provides a substrate processing device for controlling the flow rate of a refrigerant during a plasma process waiting period, comprising: a chamber having a processing space inside; a substrate support including a mounting plate on which a substrate is mounted in the processing space; a plasma generating device including an upper power source and a lower power source for generating plasma using a process gas; and a mounting plate temperature control unit for controlling the temperature of the mounting plate by supplying a refrigerant to one side of the substrate through the mounting plate. The mounting plate temperature control unit comprises a refrigerant supply unit for supplying the refrigerant, a refrigerant supply pipe connecting the refrigerant supply unit and the mounting plate to deliver the refrigerant to the mounting plate, a flow rate control device for controlling the flow rate of the refrigerant delivered to the mounting plate, a mounting plate temperature measuring device for measuring the temperature of the mounting plate, and a power supply measuring device for measuring whether power is being supplied by the upper power source and the lower power source.

[0010] To solve the aforementioned problem, the technical concept of the present invention provides a substrate processing device that controls the flow rate of a refrigerant by measuring the supply temperature and discharge temperature of the refrigerant, comprising: a chamber having a processing space inside; a substrate support including a mounting plate on which a substrate is mounted in the processing space; a plasma generating device that generates plasma using a process gas; and a mounting plate temperature control unit that controls the temperature of the mounting plate by supplying a refrigerant to one side of the substrate through the mounting plate. The mounting plate temperature control unit comprises a refrigerant supply unit that supplies the refrigerant; a refrigerant supply pipe that connects the refrigerant supply unit to the mounting plate and delivers the refrigerant to the mounting plate; a flow rate control device that controls the flow rate of the refrigerant delivered to the mounting plate; a mounting plate temperature measuring device that measures the temperature of the mounting plate; and a refrigerant temperature measuring device that measures the supply temperature and discharge temperature of the refrigerant. Effects of the invention

[0011] A substrate mounting plate temperature control device and a substrate processing device including the same, according to the technical concept of the present invention, can appropriately control the flow rate of the refrigerant during process progress or standby, thereby preventing the phenomenon where the temperature of the substrate mounting plate becomes extremely low and improving the lifespan of the substrate mounting plate.

[0012] A substrate mounting plate temperature control device and a substrate processing device including the same, according to the technical concept of the present invention, can control the speed of control when controlling the flow rate of a refrigerant, thereby preventing rapid temperature changes of the substrate mounting plate and improving the lifespan of the substrate mounting plate. Brief explanation of the drawing

[0013] FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus according to exemplary embodiments of the present invention. Figure 2 is a cross-sectional view schematically showing the temperature control unit of the mounting plate of the substrate processing device of Figure 1. FIG. 3 is a cross-sectional view schematically showing a temperature control unit of a substrate processing device including an opening and closing valve according to exemplary embodiments of the present invention. FIG. 4 is a cross-sectional view schematically showing a mounting plate temperature control unit of a substrate processing apparatus including a plurality of refrigerant supply pipes according to exemplary embodiments of the present invention. FIG. 5 is a cross-sectional view schematically showing a mounting plate temperature control unit of a substrate processing device including a plurality of shut-off valves and a plurality of refrigerant supply pipes according to exemplary embodiments of the present invention. FIG. 6 is a cross-sectional view schematically showing a mounting plate temperature control unit of a substrate processing device including a power supply measuring device according to exemplary embodiments of the present invention. FIG. 7 is a cross-sectional view schematically showing a mounting plate temperature control unit of a substrate processing device including an opening / closing valve and a power supply measuring device according to exemplary embodiments of the present invention. FIG. 8 is a cross-sectional view schematically showing a mounting plate temperature control unit of a substrate processing apparatus including a refrigerant temperature measuring device according to exemplary embodiments of the present invention. FIG. 9 is a cross-sectional view schematically showing a mounting plate temperature control unit of a substrate processing device including a refrigerant temperature measuring device and an opening / closing valve according to exemplary embodiments of the present invention. Specific details for implementing the invention

[0014] The terms used in these embodiments have been selected to be as widely used and general as possible, taking into account the functions within these embodiments; however, these terms may vary depending on the intent of those skilled in the art, case law, the emergence of new technologies, etc. Additionally, in specific cases, the applicant has arbitrarily selected terms, and in such cases, their meanings will be described in detail in the relevant sections. Therefore, the terms used in these embodiments should be defined not merely by their names, but based on their meanings and the content throughout these embodiments.

[0015] The embodiments are subject to various modifications and may take various forms; therefore, some embodiments are illustrated in the drawings and described in detail. However, this is not intended to limit the embodiments to the specific disclosed forms, and it should be understood that the embodiments include all modifications, equivalents, and substitutions that fall within the spirit and scope of the embodiments. The terms used herein are for the description of the embodiments only and are not intended to limit the embodiments.

[0016] Unless otherwise defined, the terms used in these embodiments have the same meaning as generally understood by those skilled in the art to which these embodiments pertain. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in these embodiments.

[0017] FIG. 1 is a cross-sectional view schematically showing a substrate processing device (10) according to exemplary embodiments of the present invention. FIG. 2 is a cross-sectional view schematically showing a mounting plate temperature control unit (500) in the substrate processing device (10) of FIG. 1.

[0018] Referring to FIGS. 1 and FIGS. 2, the substrate processing device (10) may include a chamber (100), a substrate support (300), a plasma generating device (400), and a mounting plate temperature control unit (500).

[0019] The chamber (100) may provide a processing space (200) in which a substrate (W) is processed. For example, the chamber (100) may have a cylindrical shape. The processing space (200) of the chamber (100) may be sealed by the upper wall and the side wall of the chamber.

[0020] Although not specifically described in the illustration, the chamber (100) may be provided with an exhaust hole at its lower portion. The exhaust hole may be connected to an exhaust line equipped with a pump. This exhaust hole can discharge reaction byproducts generated during the plasma process and gases remaining inside the chamber (100) to the outside of the chamber (100) through the exhaust line. In this case, the internal space of the chamber (100) may be depressurized to a predetermined pressure.

[0021] A substrate support (300) may be provided within the processing space (200) of the chamber (100). The substrate support (300) may support a substrate (W). Additionally, the substrate support (300) may include a mounting plate (301) on which the substrate (W) is mounted and a base (302).

[0022] The mounting plate (301) may include a dielectric material. A substrate (W) is placed directly on the upper surface of the mounting plate (301). The mounting plate (301) may be provided in the shape of a disc. The mounting plate (301) may have a radius smaller than that of the substrate (W).

[0023] The mounting plate (301) may include an electrostatic chuck (ESC). The electrostatic chuck may include an electrostatic electrode that adsorbs a substrate (W) using electrostatic force. An internal electrode may be installed inside the mounting plate (301). A power source is connected to the internal electrode, and power may be applied from the power source. The internal electrode may provide an electrostatic force from the applied power to adsorb the substrate (W) to the mounting plate. In addition, the mounting plate (301) may support the substrate in various ways, such as mechanical clamping and vacuum.

[0024] The plasma generating device (400) can generate plasma from the gas remaining in the processing space (200) within the chamber (100). The plasma generating device can generate plasma in the processing space (200) inside the chamber (100) using an inductively coupled plasma (ICP) source.

[0025] The plasma generating device (400) may include an upper electrode, a lower electrode, an upper power source (401), and a lower power source (402).

[0026] Although a single upper power source (401) is shown in FIG. 1, it is possible to have multiple upper power sources in this embodiment. When multiple upper power sources (401) are provided, the substrate processing device (10) may further include a first matching network (not shown) electrically connected to multiple upper power sources (401).

[0027] The lower power supply (402) can supply power to the lower electrode, that is, the mounting plate (301). This lower power supply (402) can serve as a plasma generating device (400) that generates plasma, or can serve to control the characteristics of the plasma together with the upper power supply (401).

[0028] Although a single lower power source (402) is shown in FIG. 1, it is possible to have multiple lower power sources in this embodiment, just like the upper power source (401). When multiple lower power sources (402) are provided, a second matching network (not shown) electrically connected to multiple lower power sources (402) may be further included.

[0029] The mounting plate temperature control unit (500) can control the flow rate of the refrigerant to prevent the temperature of the mounting plate (301) from dropping to an ultra-low temperature. The mounting plate temperature control unit (500) may include a refrigerant supply unit (510), a refrigerant supply pipe (520), a flow rate control device (530), and a mounting plate temperature measuring device (540).

[0030] The refrigerant supply unit (510) can supply a refrigerant. The refrigerant may be provided to maintain the process temperature of the substrate (W) during the etching process inside the chamber (100). The refrigerant may include liquid nitrogen, etc.

[0031] The refrigerant supply pipe (520) can connect the refrigerant supply section (510) and the refrigerant discharge section (not shown). The refrigerant supply pipe (520) can be located inside the base (302) of the substrate support (300). The refrigerant supply pipe (520) can cause the refrigerant to circulate inside the base (302) of the substrate support (300). Through the circulation of the refrigerant through this refrigerant supply pipe (520), the mounting plate (301) and the substrate (W) can be cooled to a desired temperature. Although the refrigerant supply pipe (520) is exemplified as having a square cross-section, it is not limited thereto, and the refrigerant supply pipe (520) can have a cross-section of various shapes such as a circle or a pentagon.

[0032] The flow rate control device (530) can control the flow rate of the refrigerant delivered to the mounting plate (301). The flow rate control device (530) may include a central processing unit (CPU) and memory. The memory may be read-only memory (ROM) or random-access memory (RAM). The CPU can execute desired processes, such as controlling the refrigerant flow rate, according to various recipes stored in the memory. The flow rate control device (530) can control the refrigerant flow rate so that it decreases when the temperature of the mounting plate (301) measured by the mounting plate (301) temperature measuring device (540) is lower than a reference temperature, and increases when the temperature is higher than a reference temperature.

[0033] FIG. 3 is a cross-sectional view schematically showing a mounting plate temperature control unit (500a) in a substrate processing device (10) according to exemplary embodiments of the present invention.

[0034] Referring to FIG. 3, the flow control device (530a) of the mounting plate temperature control unit (500a) may include an opening / closing valve (531) to control the flow rate of the refrigerant. The opening / closing valve (531) may be located in the refrigerant supply pipe (520) within the flow control device (530a). The opening / closing valve (531) may be controlled by a CPU according to the temperature of the mounting plate (301) input to the flow control device (530a). The opening / closing valve (531) may include a valve that controls the flow rate, such as a sluice valve or a globe valve.

[0035] FIG. 4 is a cross-sectional view schematically showing a mounting plate temperature control unit (500b) in a substrate processing device (10) according to exemplary embodiments of the present invention.

[0036] Referring to FIG. 4, the mounting plate temperature control unit (500b) may include a plurality of refrigerant supply pipes (520). The plurality of refrigerant supply pipes (520) can circulate more refrigerant simultaneously than a single refrigerant supply pipe (520). The plurality of refrigerant supply pipes (520) can bring the substrate (W) and the mounting plate (301) to the reference temperature faster than a single refrigerant supply pipe when they deviate from the reference temperature.

[0037] Multiple refrigerant supply pipes (520) may be pipes of the same size or pipes of different sizes. Multiple refrigerant supply pipes (520) may be connected to different refrigerant supply units (510) to circulate different types of refrigerants.

[0038] FIG. 5 is a cross-sectional view schematically showing a mounting plate temperature control unit (500c) in a substrate processing device (10) according to exemplary embodiments of the present invention.

[0039] Referring to FIG. 5, the mounting plate temperature control unit (500c) may include a plurality of refrigerant supply pipes (520), and the flow control device (530b) of the mounting plate temperature control unit (500c) may include a plurality of open / close valves (531). Each of the plurality of open / close valves (531) may correspond to each of the plurality of refrigerant supply pipes (520). Each of the plurality of open / close valves (531) may be located at least one on each of the refrigerant supply pipes (520) within the flow control device.

[0040] The flow control device (530b) can individually control the refrigerant flow rate of a plurality of refrigerant supply pipes (520) based on the temperature measured by the mounted plate temperature measuring device (540). Controlling the refrigerant flow rate through a plurality of shut-off valves (531) and a plurality of refrigerant supply pipes (520) allows for more precise flow rate control than controlling the refrigerant flow rate through a single refrigerant supply pipe (520). The shut-off valves (531) may include sluice valves, globe valves, etc.

[0041] FIG. 6 is a cross-sectional view schematically showing a mounting plate temperature control unit (500d) in a substrate processing device (10) in exemplary embodiments of the present invention.

[0042] Referring to FIGS. 1 and FIGS. 6, the mounting plate temperature control unit (500d) of the substrate processing device (10) may further include a power supply meter (550). The power supply meter (550) can check whether power is being supplied from the upper power supply (401) and the lower power supply (402) of the plasma generating device (400).

[0043] The mounting plate temperature control unit (500d) of the substrate processing device (10) can prevent the temperature of the mounting plate (301) from dropping in advance by circulating the same amount of refrigerant through the refrigerant supply pipe even when waiting for the etching process through the power supply meter (550). The mounting plate temperature control unit (500d) can prevent overcooling of the substrate (W) and the mounting plate (301) by reducing the refrigerant flow rate when at least one of the upper power supply (401) and the lower power supply (402) is not supplying power, that is, when the plasma etching process is not being performed.

[0044] FIG. 7 is a cross-sectional view schematically showing a mounting plate temperature control unit (500e) of a substrate processing device (10) according to exemplary embodiments of the present invention.

[0045] Referring to FIGS. 6 and 7, the mounting plate temperature control unit (500e) may include a power supply meter (550), and the flow rate control device (530a) of the mounting plate temperature control unit (500e) may include an opening / closing valve (531). Based on the value output from the power supply meter (550), the temperature of the mounting plate (301) and the substrate (W) can be controlled by predicting the supercooling of the substrate (W) and the mounting plate (301) in advance through precise control of the refrigerant flow rate through the opening / closing valve (531). The opening / closing valve (531) may include a valve capable of controlling the flow rate, such as a sluice valve or a globe valve.

[0046] FIG. 8 is a cross-sectional view schematically showing a mounting plate temperature control unit (500f) of a substrate processing device (10) according to exemplary embodiments of the present invention.

[0047] Referring to FIG. 8, the mounting plate temperature control unit (500f) of the substrate processing device (10) may further include a refrigerant temperature measuring device (560). The refrigerant temperature measuring device (560) can measure the supply temperature and discharge temperature of the refrigerant. The mounting plate temperature control unit (500f) of the substrate processing device (10) can measure the supply temperature of the refrigerant and the discharge temperature after cooling the substrate through the refrigerant temperature measuring device (560), and can adjust the refrigerant flow rate control speed according to the difference between the two temperatures. The mounting plate temperature control unit (500f) including the refrigerant temperature measuring device (560) can control the speed of the refrigerant flow rate control, thereby preventing rapid temperature changes of the mounting plate (301) and the substrate (W).

[0048] The refrigerant temperature measuring device (560) of the mounting plate temperature control unit (500f) may be composed of a first measuring device (561) and a second measuring device (562). The first measuring device (561) can measure the refrigerant supply temperature. The first measuring device (561) may be located at the bottom of the refrigerant supply pipe (520) adjacent to the refrigerant supply unit (510). The second measuring device (562) can measure the refrigerant discharge temperature. The second measuring device (562) may be located at the bottom of the refrigerant supply pipe (520) adjacent to the refrigerant discharge unit where the refrigerant is discharged.

[0049] The flow control device (530) of the mounting plate temperature control unit (500f) can control the flow rate control speed quickly if the difference between the measured supply temperature and discharge temperature of the refrigerant is large, and can control the flow rate control speed slowly if the difference between the supply temperature and discharge temperature of the refrigerant is small.

[0050] FIG. 9 is a cross-sectional view schematically showing a mounting plate temperature control unit (500g) of a substrate processing device (10) according to exemplary embodiments of the present invention.

[0051] Referring to FIGS. 8 and 9, the mounting plate temperature control unit (500g) may include a refrigerant temperature measuring device (560), and the flow rate control device (530a) may include an opening / closing valve (531). Since the refrigerant flow rate can be precisely controlled through the opening / closing valve (531), rapid temperature changes of the mounting plate (301) and the substrate (W) can be prevented. Explanation of the symbols

[0052] 10: Substrate processing device 100: Chamber 200: Processing space 300: Substrate support 301: Mount plate 302: Base 400: Plasma generator 401: Upper power supply 402: Lower power supply 500: Mount plate temperature control unit 510: Refrigerant supply unit 520: Refrigerant supply pipe 530: Flow regulator 531: Shut-off valve 540: Mount plate temperature measuring device 550: Power supply measuring device 560: Refrigerant temperature measuring device 561: First measuring instrument 562: Second measuring instrument

Claims

Claim 1 A substrate processing device comprising: a chamber having a processing space inside; a substrate support including a mounting plate disposed in the processing space and on which a substrate is mounted; a plasma generating device that generates plasma using a process gas; and a mounting plate temperature control unit that controls the temperature of the mounting plate by supplying a refrigerant to one side of the substrate through the mounting plate; wherein the mounting plate temperature control unit includes a refrigerant supply unit that supplies the refrigerant, a refrigerant supply pipe that connects the refrigerant supply unit to the mounting plate and delivers the refrigerant to the mounting plate, a flow rate control device that controls the flow rate of the refrigerant delivered to the mounting plate, and a mounting plate temperature measuring device that measures the temperature of the mounting plate; wherein the plasma generating device includes an upper power source and a lower power source; and wherein the mounting plate temperature control unit further includes a power supply measuring device that measures whether power is being supplied by the upper power source and the lower power source; and wherein, when the mounting plate temperature control unit determines through the power supply measuring device that at least one of the upper power source and the lower power source is not supplying power, the flow rate control device controls the flow rate of the refrigerant to reduce the flow rate of the refrigerant. Claim 2 delete Claim 3 In claim 1, the substrate processing device further includes a refrigerant temperature measuring device that measures the supply temperature and discharge temperature of the refrigerant in the mounting plate temperature control unit. Claim 4 A substrate processing apparatus according to claim 1, wherein the substrate support comprises an electrostatic chuck, a mechanical clamping or a vacuum chuck as the mounting plate. Claim 5 In claim 1, the substrate processing device comprises a refrigerant including liquid nitrogen. Claim 6 In claim 1, the mounting plate temperature control unit comprises a plurality of the refrigerant supply pipes, forming a substrate processing device. Claim 7 In claim 1, the mounting plate temperature control unit comprises a plurality of opening and closing valves as the flow control device, in a substrate processing device.

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