Euro structure and semiconductor manufacturing device

Abstract

The flow path structure comprises a body, a flow path, a plurality of openings, a first metal wiring, and a second metal wiring. The body has a first surface and is made of ceramics. The flow path is located inside the body and has a plurality of branch paths. The plurality of openings are located on the first surface and are each connected to the plurality of branch paths. At least a portion of the first metal wiring is located inside the body and is made of a first metal. At least a portion of the second metal wiring is located inside the body and is made of a second metal different from the first metal. Additionally, the first metal wiring and the second metal wiring are connected inside the body to form a thermocouple section having a thermocouple function. Furthermore, when the first surface is viewed from the front, the first metal wiring and the second metal wiring surround the opening, and the thermocouple section is located around the opening.

Description

Technology Field

[0001] An embodiment of the disclosure relates to a Euro structure and a semiconductor manufacturing apparatus. Background Technology

[0002] In a semiconductor manufacturing apparatus, a technology is disclosed for performing a process while estimating various process data based on data acquired using multiple types of sensors. For example, Patent Document 1 describes loading a semiconductor wafer onto a loading platform equipped with a temperature sensor (S1) as an example of a sensor, and acquiring temperature data near the semiconductor wafer. It also describes placing a temperature sensor (S2) on the back side of a shower plate. Prior art literature

[0003] International Publication No. 2021 / 157453

[0004] The flow channel structure of the present disclosure comprises a body, a flow channel, a plurality of openings, a first metal wiring, and a second metal wiring. The body has a first surface and is composed of ceramics. The flow channel is located inside the body and has a plurality of branching paths. The plurality of openings are located on the first surface and are each connected to the plurality of branching paths. At least a portion of the first metal wiring is located inside the body and is composed of a first metal. At least a portion of the second metal wiring is located inside the body and is composed of a second metal different from the first metal. Additionally, the first metal wiring and the second metal wiring are connected inside the body to form a thermocouple section having a thermocouple function. Furthermore, when the first surface is viewed from the front, the first metal wiring and the second metal wiring surround the opening, and the thermocouple section is located around the opening. Brief explanation of the drawing

[0005] FIG. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing device according to an embodiment. FIG. 2 is a perspective view showing an example of the configuration of a Euro structure according to an embodiment. FIG. 3 is a front view showing an example of the configuration of a Euro structure according to an embodiment. Figure 4 is a cross-sectional view taken from the arrow of line AA shown in Figure 3. FIG. 5 is a front view showing an example of the configuration of a thermocouple unit according to an embodiment. FIG. 6 is a cross-sectional view showing an example of the configuration of a thermocouple according to an embodiment. FIG. 7 is a cross-sectional view showing an example of the configuration of a thermocouple according to an embodiment. FIG. 8 is a cross-sectional view showing an example of the configuration of a thermocouple according to an embodiment. FIG. 9 is a front view showing another example of the configuration of a thermocouple according to an embodiment. FIG. 10 is a cross-sectional view showing another example of the configuration of a thermocouple according to an embodiment. FIG. 11 is a cross-sectional view showing another example of the configuration of a thermocouple according to an embodiment. FIG. 12 is a front view showing an example of the configuration of a Euro structure according to Variant Example 1 of the embodiment. FIG. 13 is a cross-sectional view showing an example of the configuration of a Euro structure according to a modified example 2 of the embodiment. FIG. 14 is a front view showing an example of the configuration of a Euro structure according to Variant Example 3 of the embodiment. FIG. 15 is a front view showing an example of the configuration of a Euro structure according to Variant Example 3 of the embodiment. FIG. 16 is a front view showing an example of the configuration of a Euro structure according to a modified example 4 of the embodiment. FIG. 17 is an enlarged cross-sectional view showing an example of the configuration of a Euro structure according to Variant Example 5 of the embodiment. FIG. 18 is an enlarged cross-sectional view showing an example of the configuration of a Euro structure according to Variant Example 6 of the embodiment. Specific details for implementing the invention

[0006] Hereinafter, embodiments of the Euro structure and semiconductor manufacturing apparatus disclosed herein will be described with reference to the attached drawings. Furthermore, the present disclosure is not limited by the embodiments described below.

[0007] In addition, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions are not strictly required to be "constant," "orthogonal," "perpendicular," or "parallel." That is, each of the above expressions allows for deviations, for example, in manufacturing precision, installation precision, etc.

[0008] A technology is disclosed for performing a process while estimating various process data by acquiring temperature data within a semiconductor manufacturing device using a temperature sensor in a semiconductor manufacturing device.

[0009] However, regarding the shower plate, which is a Euro structure, the above-described conventional technology had room for further improvement in that it could only acquire temperature data on the back side of the shower plate. For example, if a temperature sensor is placed in a position closer to the semiconductor wafer within the shower plate, temperature data closer to the position where the process is taking place can be obtained.

[0010] Semiconductor manufacturing equipment

[0011] First, the configuration of a semiconductor manufacturing apparatus (100) according to an embodiment will be described with reference to FIG. 1. FIG. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus (100) according to an embodiment.

[0012] The semiconductor manufacturing apparatus (100) according to the embodiment is, for example, a plasma processing apparatus that processes a semiconductor wafer (W) using plasma. Examples of such semiconductor manufacturing apparatus (100) include a CVD (Chemical Vapor Deposition) apparatus or a dry etching apparatus.

[0013] A semiconductor manufacturing apparatus (100) according to an embodiment comprises a flow channel structure (1), a chamber (110), a loading platform (120), and a shaft (130). The chamber (110) accommodates at least a portion of the flow channel structure (1), the loading platform (120), and at least a portion of the shaft (130).

[0014] The interior of the chamber (110) can be exhausted or depressurized by means of an exhaust section not shown. Additionally, an opening (111) for transporting a semiconductor wafer (W) is located on the side of the chamber (110).

[0015] The loading platform (120) is located below the flow channel structure (1) within the chamber (110). The loading platform (120) supports a semiconductor wafer (W) on the surface facing the flow channel structure (1), in this case, on the upper surface of the loading platform (120).

[0016] The shaft (130) supports the flow path structure (1) inside the chamber (110) and introduces a medium, such as process gas, into the flow path structure (1). A through hole (131) is formed inside the shaft (130), and this through hole (131) is connected to the opening (3) (see FIG. 2) of the flow path structure (1). The loading platform (120) or the shaft (130) may be made of ceramics. As for the ceramics, for example, aluminum oxide or aluminum nitride may be used.

[0017] In a semiconductor manufacturing apparatus (100), the process gas used for plasma treatment is drawn from the through hole (131) of the shaft (130) through the flow path (4) (see FIG. 4) of the flow path structure (1) into the interior of the chamber (110) through a plurality of openings (5) (see FIG. 3). That is, the flow path structure (1) according to the embodiment functions as a shower plate in the semiconductor manufacturing apparatus (100), for example.

[0018] Euro structure

[0019] Next, the configuration of the flow channel structure (1) according to the embodiment will be explained with reference to FIGS. 2 to 4. FIG. 2 is a perspective view showing an example of the configuration of the flow channel structure (1) according to the embodiment, and FIG. 3 is a front view showing an example of the configuration of the flow channel structure (1) according to the embodiment. In addition, FIG. 4 is a cross-sectional view taken from the arrow of line AA shown in FIG. 3.

[0020] As shown in FIGS. 2 to 4, the fluid structure (1) according to the embodiment comprises a gas (2), an opening (3), a fluid channel (4), and a plurality of openings (5) formed in the gas (2).

[0021] As shown in FIG. 2, the body (2) is, for example, disc-shaped and has a first surface (2a) and a second surface (2b). In FIG. 2, the lower surface is the first surface (2a) and the upper surface is the second surface (2b). In addition, although the present disclosure shows an example in which the shape of the body (2) is disc-shaped, the shape of the body (2) is not limited to disc-shaped and may be any shape.

[0022] As shown in FIG. 4, the opening (3) is located on the second surface (2b) of the body (2), and the plurality of openings (5) are located on the first surface (2a) of the body (2). Then, the opening (3) and the plurality of openings (5) are connected by a flow path (4).

[0023] For example, the opening (3) is located in the center of the second surface (2b) of the gas (2), as shown in FIG. 2. Additionally, a plurality of openings (5) may be located so as to be evenly distributed over the entire first surface (2a) of the gas (2), as shown in FIG. 3.

[0024] Additionally, although the present disclosure describes an example in which one opening (3), which is an inlet for a medium such as process gas, is formed and multiple openings (5), which are outlets for the medium, are formed, the present disclosure is not limited to such an example. For example, multiple openings (3) may be formed, and one opening (5) may be formed.

[0025] As shown in FIG. 4, the Euro (4) has an introduction path (4a), a widening path (4b), and a plurality of branch paths (4c) sequentially from the side connected to the opening (3). The introduction path (4a) is, for example, a portion that extends vertically from the opening (3) to the second side (2b).

[0026] The widening path (4b) is, for example, a portion extending parallel to the first surface (2a) from the end of the first surface (2a) side in the introduction path (4a). The plurality of branch paths (4c) are, for example, portions extending from the widening path (4b) to each of the plurality of openings (5). Furthermore, the configuration of the flow path (4) in the present disclosure is not limited to the example of FIG. 4.

[0027] The gas (2) according to the embodiment may be composed of any material, such as resin, metal, and ceramics. Meanwhile, if the gas (2) is composed of ceramics, it is superior to resin or metal in terms of mechanical strength, heat resistance, and corrosion resistance.

[0028] Here, ceramics are aluminum oxide ceramics, zirconium oxide ceramics, yttrium oxide ceramics, magnesium oxide ceramics, silicon nitride ceramics, aluminum nitride ceramics, silicon carbide ceramics, cozelite ceramics or mullite ceramics, etc.

[0029] And, for example, aluminum oxide ceramics are ceramics that contain 70 mass% or more of aluminum oxide among 100 mass% of the total components constituting the ceramics. Also, the same applies to other ceramics.

[0030] In addition, the material of the target gas can be verified by the following method. First, the target gas is measured using an X-ray diffraction (XRD) device, and the obtained diffraction angle, 2θ, is compared with the JCPDS card. Here, the explanation is given using an example where the presence of aluminum oxide in the target gas is confirmed by XRD.

[0031] Next, a quantitative analysis of aluminum (Al) is performed using an ICP emission spectroscopic analyzer (ICP) or a fluorescence X-ray analyzer (XRF). Then, if the content of aluminum oxide (Al2O3) converted from the Al content measured by ICP or XRF is 70 mass% or more, the target gas is composed of aluminum oxide ceramics.

[0032] In addition, when the flow channel structure (1) of the present disclosure is provided with a plurality of openings (5) and the gas (2) is composed of ceramics, it can be suitably used as a shower plate for a semiconductor manufacturing apparatus (100) (see FIG. 1) that requires corrosion resistance. Furthermore, the flow channel structure (1) according to the embodiment has a high quality of workpiece in that the quality of the incoming gas is minimally degraded.

[0033] Here, in the embodiment, as shown in FIG. 3, a plurality, or two in the drawing, of thermocouple units (10) are located inside the body (2). These thermocouple units (10) are configured by connecting a first metal wiring (11) (see FIG. 5) composed of a first metal and a second metal wiring (12) (see FIG. 5) composed of a second metal different from the first metal, and have a thermocouple function.

[0034] In addition, in the embodiment, a plurality of thermocouple units (10) are positioned inside the gas (2), thereby allowing a plurality of temperature measurement points to be set within the shower plate. By doing so, the temperature inside the shower plate can be measured, and the temperature distribution within the shower plate can also be measured.

[0035] In addition, in the embodiment, as shown in FIG. 3, a plurality of thermocouples (10) are located at different distances from the center of the first surface (2a). For example, in the example of FIG. 3, one thermocouple (10) is located at the center of the first surface (2a), and another thermocouple (10) is located at the end of the first surface (2a).

[0036] By this, the temperature distribution according to the expansion of the medium discharged from the Euro structure (1) can be measured.

[0037] In addition, in the embodiment, a plurality of thermocouples (10) may be located at different distances from the opening (111) (see FIG. 1) of the chamber (110) (see FIG. 1). For example, in the embodiment, a thermocouple (10) may be located at a portion closer to the opening (111) in the gas (2) and at a portion further away from the opening (111) in the gas (2).

[0038] By this, both the temperature near the opening (111) where the temperature is likely to drop and the temperature in the area away from the opening (111) where the temperature is unlikely to drop can be measured. Therefore, according to the embodiment, the temperature distribution inside the chamber (110) can be measured with high precision.

[0039] In addition, although the example in FIG. 4 shows an example where the widening path (4b) is in the shape of a disc, the present disclosure is not limited to such an example, and a support may be installed inside the widening path (4b).

[0040] Biographies of the Great Master

[0041] Next, the configuration of the thermocouple unit (10) according to the embodiment will be explained with reference to FIGS. 5 to 11. FIG. 5 is a front view showing an example of the configuration of the thermocouple unit (10) according to the embodiment, and FIG. 6 is a cross-sectional view showing an example of the configuration of the thermocouple unit (10) according to the embodiment. FIG. 6 is a cross-sectional view taken from the arrow of line BB shown in FIG. 5.

[0042] As shown in FIG. 5, the thermocouple (10) is configured at the contact area between the first metal wiring (11) composed of a first metal and the second metal wiring (12) composed of a second metal.

[0043] These first metal and second metal may include, for example, W (tungsten) and Re (rhenium), and may be configured such that the ratio of these W and Re is different from each other. By doing so, an electromotive force due to the Seebeck effect can be generated at the contact portions of the first metal wiring (11) and the second metal wiring (12).

[0044] This alloy is not defined by industrial standards such as JIS as a material for forming the thermocouple part (10), but it has a melting point of 3000°C or higher, so it can be fired simultaneously with the ceramics constituting the gas (2), and because it has a large electromotive force, the instrument used for temperature measurement of commercially available thermocouples can be applied as is.

[0045] Specifically, the first metal wiring (11) may be formed from an alloy with a volume ratio of W:Re = 94:6 to 97:3, and the second metal wiring (12) may be formed from an alloy with a volume ratio of W:Re = 73:27 to 76:24. By setting the volume ratio of W and Re of the W-Re alloy constituting the first metal wiring (11) and the second metal wiring (12) to the above range, high-precision measurement can be easily realized.

[0046] In addition, in the present disclosure, the material of the first metal wiring (11) and the second metal wiring (12) is not limited only to an alloy containing W and Re, but may also be an alloy containing Pt (platinum) and Rh (rhodium), an alloy containing Ni (nickel) and Cr (chromium), or an alloy specified in JIS C1602.

[0047] In addition, in the present disclosure, the materials of the first metal wiring (11) and the second metal wiring (12) may be alloys that have a high melting point capable of withstanding the firing temperature of ceramics constituting the gas (2) and are suitable for use in commercially available instruments, with a large electromotive force and different resistance temperature coefficients from the perspective of increasing measurement precision.

[0048] The manufacturing process of the body (2) including the first metal wiring (11) and the second metal wiring (12) first involves preparing a tape containing a binder made of ceramics as a raw material. Additionally, if necessary, the shape may be processed using a tool, a mold, or a laser.

[0049] Next, a conductive paste that forms the first metal wiring (11) and the second metal wiring (12) is printed and filled onto the tape. Then, the tape is laminated after drying, and by degreasing and firing under conditions according to the material of the tape, a flow channel structure (1) can be obtained.

[0050] In the embodiment, by using this tape lamination method, a thermocouple part (10) can be easily formed inside the body (2). In addition, in the embodiment, by forming the thermocouple part (10) inside the body (2) with printed conductive paste, it is not necessary to correct the thermocouple part (10) even after long-term use.

[0051] As shown in FIG. 5, the first metal wiring (11) may have a surrounding portion (11a), a wiring portion (11b), and a via portion (11c) (see FIG. 14). In the example of FIG. 5, the surrounding portion (11a) is positioned to surround the branching path (4c). The surrounding portion (11a) may surround the entire perimeter of the branching path (4c) without any cuts, for example, as shown in FIG. 5 and FIG. 6.

[0052] The wiring portion (11b) is positioned to extend parallel to the first surface (2a) of the body (2) (see FIG. 6). The via portion (11c) is positioned to extend perpendicularly to the first surface (2a) of the body (2).

[0053] Additionally, the second metal wiring (12) has a surrounding portion (12a), a wiring portion (12b), and a via portion (12c) (see FIG. 14). The surrounding portion (12a) is positioned to surround the branching path (4c). The wiring portion (12b) is positioned to extend parallel to the first surface (2a) of the body (2).

[0054] Additionally, the wiring portion (12b) is positioned to run over the surrounding portion (11a) of the first metal wiring (11), as shown in FIG. 6. The via portion (12c) is positioned to extend perpendicularly to the first surface (2a) of the body (2).

[0055] And, the surrounding portion (11a) and the surrounding portion (12a) are positioned to surround the outer side of the branch (4c) in a concentric manner. Additionally, the surrounding portion (11a) and the surrounding portion (12a) are positioned to be in contact with each other. By this, a circular thermocouple portion (10) is formed at the contact area between the surrounding portion (11a) and the surrounding portion (12a).

[0056] As explained so far, in the embodiment as shown in FIG. 5, when the first surface (2a) is viewed from the front, the first metal wiring (11) and the second metal wiring (12) surround the opening (5), and the thermocouple (10) is located around the opening (5).

[0057] By this, the temperature of the branch (4c) and opening (5) through which the process gas is discharged can be measured with high precision.

[0058] In addition, in the embodiment, when the first surface (2a) is viewed from the front, the thermocouple (10) may surround the opening (5). This allows the temperature in the vicinity of the branch (4c) and the opening (5) through which the process gas is discharged to be measured with greater precision.

[0059] In addition, in the embodiment, the cross-sectional shape of the thermocouple part (10) shown in FIG. 5 is not limited to the example of FIG. 6. FIG. 7 and FIG. 8 are cross-sectional views showing an example of the configuration of the thermocouple part (10) according to the embodiment, and are drawings corresponding to FIG. 6 described above. As shown in FIG. 7, in the embodiment, a portion of the enclosed part (11a) of the first metal wiring (11) may be notched so that it is divided by the wiring part (12b) of the second metal wiring (12).

[0060] In addition, in the embodiment, as shown in FIG. 8, the first metal wiring (11) and the second metal wiring (12) may be positioned so as to be stacked inside the body (2). Also, the thermocouple portion (10) may be formed by stacking the surrounding portion (12a) of the second metal wiring (12) in contact with the surrounding portion (11a) of the first metal wiring (11).

[0061] In this way, when the first surface (2a) is viewed from the front, the first metal wire (11) and the second metal wire (12) are positioned overlappingly in the thermocouple part (10), thereby increasing the contact area between the surrounding part (11a) and the surrounding part (12a).

[0062] Because of this, the temperature near the branch (4c) and opening (5) where the process gas is discharged can be measured with greater precision.

[0063] In addition, in the embodiment, the planar shape of the thermocouple part (10) is not limited to the example of FIG. 5. FIG. 9 is a front view showing another example of the configuration of the thermocouple part (10) according to the embodiment, and FIG. 10 is a cross-sectional view showing another example of the configuration of the thermocouple part (10) according to the embodiment. FIG. 10 is a cross-sectional view seen from the arrow of the CC line shown in FIG. 9.

[0064] As shown in FIGS. 9 and 10, in the embodiment, the semicircular surrounding portion (11a) and the semicircular surrounding portion (12a) are connected to each other to form a circular shape, so that the first metal wiring (11) and the second metal wiring (12) may be positioned to surround the opening (5) in its entirety.

[0065] By this, the temperature near the branch (4c) and opening (5) through which the process gas is discharged can also be measured with high precision.

[0066] In addition, as shown in FIG. 9, in the present disclosure, even if the part where the first metal wire (11) and the second metal wire (12) meet, i.e., the thermocouple part (10), is located apart, if it is located at a distance of 1 (cm) or less and is connected to the same first metal wire (11) and second metal wire (12), it can be considered as one thermocouple part (10).

[0067] In addition, in the embodiment, the cross-sectional shape of the thermocouple part (10) shown in FIG. 9 is not limited to the example of FIG. 10. FIG. 11 is a cross-sectional view showing another example of the configuration of the thermocouple part (10) according to the embodiment.

[0068] As shown in FIG. 11, in the embodiment, the first metal wiring (11) and the second metal wiring (12) may be positioned so as to be stacked inside the body (2). Additionally, the thermocouple portion (10) may be formed by stacking the surrounding portion (12a) of the second metal wiring (12) in contact with the surrounding portion (11a) of the first metal wiring (11).

[0069] In this way, when the first surface (2a) is viewed from the front, the first metal wire (11) and the second metal wire (12) are positioned overlappingly in the thermocouple part (10), thereby increasing the contact area between the surrounding part (11a) and the surrounding part (12a).

[0070] Because of this, the temperature near the branch (4c) and opening (5) where the process gas is discharged can be measured with greater precision.

[0071] In addition, in the embodiment, the thermocouple part (10) may have a region including the first metal and the second metal. That is, in the embodiment, the thermocouple part (10) may have a region where the first metal and the second metal are mixed together. By doing so, the reliability of the thermocouple part (10) can be improved.

[0072] <Variation Example 1>

[0073] Next, various variations of the embodiment will be explained with reference to FIGS. 12 to 18. FIG. 12 is a front view showing an example of the configuration of a flow path structure (1) according to variation 1 of the embodiment, and is a drawing corresponding to FIG. 3 of the embodiment.

[0074] As shown in FIG. 12, in Variation Example 1, three or more thermocouples (10) may be located inside the body (2). For example, in Variation Example 1, one thermocouple (10) is located at the center of the first surface (2a), another thermocouple (10) is located at the end of the first surface (2a), and yet another thermocouple (10) is located midway between the center and the end of the first surface (2a).

[0075] By this, the temperature distribution according to the expansion of the medium discharged from the Euro structure (1) can be measured with high precision.

[0076] In addition, in Variation Example 1, three or more thermocouples (10) may be positioned side by side in a straight line. This allows the temperature trend inside the chamber (110) to be determined.

[0077] Additionally, although the example in FIG. 12 shows an example in which three thermocouples (10) are located inside the body (2), the present disclosure is not limited to such an example, and four or more thermocouples (10) may be located inside the body (2).

[0078] <Variation Example 2>

[0079] FIG. 13 is a cross-sectional view showing an example of the configuration of a Euro structure (1) according to modified example 2 of the embodiment, and is a drawing corresponding to FIG. 4 of the embodiment.

[0080] As shown in FIG. 13, in Variation Example 2, in addition to the area around the branch path (4c), a thermocouple (10) may also be positioned around the area around the introduction path (4a). This allows for measuring temperature changes on the upstream and downstream sides of the flow path (4).

[0081] In addition, in Variation Example 2, a plurality of thermocouples (10) located around the branch (4c) may be positioned at different distances from the first surface (2a). This allows for measuring the temperature change of the process gas on the upstream and downstream sides of the branch (4c).

[0082] In addition, in Variation Example 2, a plurality of thermocouples (10) located around the branch (4c) may be positioned in an overlapping position when the first surface (2a) is viewed from the front. By doing so, the temperature change of the process gas on the upstream and downstream sides of the same branch (4c) can be measured.

[0083] <Variation Example 3>

[0084] FIGS. 14 and FIGS. 15 are front views showing an example of the configuration of a Euro structure (1) according to Variation Example 3 of the embodiment. FIG. 14 is a front view when viewed from the first side (2a) of the body (2), and FIG. 15 is a front view when viewed from the second side (2b) of the body (2).

[0085] As shown in FIGS. 14 and 15, in Variation Example 3, a plurality, or three thermocouples (10) in the drawings are connected to one terminal (13) located on the second surface (2b) through the wiring portion (11b) and via portion (11c) of a common first metal wiring (11).

[0086] Meanwhile, in Variation Example 3, a plurality of thermocouples (10) are each connected to a plurality of terminals (14) located on the second surface (2b) through the wiring portion (12b) and via portion (12c) of the individual second metal wiring (12).

[0087] In this way, by making at least one of the first metal wiring (11) and the second metal wiring (12) common, the number of terminals (13, 14) that are typically required in combination by twice the number of thermocouple parts (10) can be reduced. Therefore, according to Variant Example 3, the manufacturing process of the flow path structure (1) can be simplified.

[0088] In addition, in the Euro structure (1) of Variant Example 3, the temperature of each thermocouple (10) can be measured by switching the measuring terminal (14) in the temperature measuring device that is not shown.

[0089] Additionally, although the examples in FIGS. 13 and 14 illustrate an example in which the first metal wiring (11) is common, the present disclosure is not limited to such examples, and the second metal wiring (12) may also be common. That is, either the first metal wiring (11) or the second metal wiring (12) may be common.

[0090] Additionally, although the examples in FIGS. 13 and 14 show via portions (11c, 12c) located at the periphery edge of the body (2), the present disclosure is not limited to such examples. For example, if a support is installed in the widening path (4b) (see FIG. 4), the via portions (11c, 12c) may be located on such a support. This improves the design freedom of the first metal wiring (11) and the second metal wiring (12).

[0091] <Variation Example 4>

[0092] FIG. 16 is a front view showing an example of the configuration of a Euro structure (1) according to a modified example 4 of the embodiment. As shown in FIG. 16, in modified example 4, when the first surface (2a) is viewed from the front, the thermocouple part (10) may be located at a position away from the center of the first surface (2a) than the opening group (5A) composed of a plurality of openings (5).

[0093] In this way, by positioning the thermocouple (10) outside the opening group (5A), the temperature outside the opening group (5A), where the temperature is likely to drop during the process, can be measured.

[0094] <Variation Example 5>

[0095] FIG. 17 is an enlarged cross-sectional view showing an example of the configuration of a Euro structure (1) according to Variant Example 5 of the embodiment. FIG. 17 is also an enlarged cross-sectional view of the perimeter edge portion of the body (2). As shown in FIG. 17, in Variant Example 5, an RF electrode (20) is positioned along the first surface (2a) inside the body (2).

[0096] These RF electrodes (20) are connected to a high-frequency power source not shown. And, by applying a high frequency from this high-frequency power source to the RF electrodes (20), plasma can be generated inside the semiconductor manufacturing device (100) (see FIG. 1).

[0097] And, in Variation Example 5, as shown in FIG. 17, when the first surface (2a) is viewed from the front, the thermocouple part (10) may be located at a position further from the center of the first surface (2a) than the RF electrode (20).

[0098] In this way, by positioning the thermocouple (10) outside the RF electrode (20), when generating plasma on the first surface (2a) side of the gas (2), the transmission of high frequency toward the first surface (2a) side of the gas (2) by the thermocouple (10) of the conductor can be reduced.

[0099] Accordingly, according to Variant Example 5, the process of the semiconductor wafer (W) in the semiconductor manufacturing apparatus (100) can be stably carried out.

[0100] <Variation Example 6>

[0101] FIG. 18 is an enlarged cross-sectional view showing an example of the configuration of a Euro structure (1) according to a modified example 6 of the embodiment. As shown in FIG. 18, the thermocouple part (10) may be located at a position away from the first surface (2a) than the RF electrode (20).

[0102] In this way, by positioning the thermocouple (10) apart from the RF electrode (20) with respect to the first surface (2a), when generating plasma on the first surface (2a) side of the gas (2), the transmission of high frequency toward the first surface (2a) side of the gas (2) by the thermocouple (10) of the conductor can be reduced.

[0103] Accordingly, according to Variant Example 6, the process of the semiconductor wafer (W) in the semiconductor manufacturing apparatus (100) can be stably carried out.

[0104] A flow path structure (1) according to an embodiment comprises a body (2), a flow path (4), a plurality of openings (5), a first metal wiring (11), and a second metal wiring (12). The body (2) has a first surface (2a) and is made of ceramics. The flow path (4) is located inside the body (2) and has a plurality of branch paths (4c). The plurality of openings (5) are located on the first surface (2a) and are each connected to the plurality of branch paths (4c). At least a portion of the first metal wiring (11) is located inside the body (2) and is made of a first metal. At least a portion of the second metal wiring (12) is located inside the body (2) and is made of a second metal different from the first metal. Additionally, the first metal wiring (11) and the second metal wiring (12) are connected inside the body (2) to form a thermocouple part (10) having a thermocouple function. And, when the first side (2a) is viewed from the front, the first metal wiring (11) and the second metal wiring (12) surround the opening (5), and the thermocouple (10) is located around the opening (5). By this, process data during the process can be estimated with high precision.

[0105] In addition, in the Euro structure (1) according to the embodiment, when the first surface (2a) is viewed from the front, the thermocouple part (10) surrounds the opening (5). This allows process data during the process to be estimated with greater precision.

[0106] In addition, in the Euro structure (1) according to the embodiment, when the first surface (2a) is viewed from the front, the first metal wiring (11) and the second metal wiring (12) in the thermocouple part (10) are positioned overlappingly. This allows process data during the process to be estimated with greater precision.

[0107] In addition, in the Euro structure (1) according to the embodiment, the thermocouple part (10) has a region including a first metal and a second metal. This can improve the reliability of the thermocouple part (10).

[0108] In addition, in the Euro structure (1) according to the embodiment, when the first surface (2a) is viewed from the front, the thermocouple part (10) is located at a position away from the center of the first surface (2a) than the opening group (5A) composed of a plurality of openings (5). By this, process data during the process can be estimated with high precision.

[0109] In addition, in the Euro structure (1) according to the embodiment, the gas (2) further has an RF electrode (20) located inside. Also, when the first surface (2a) is viewed from the front, the thermocouple part (10) is located at a position further from the center of the first surface (2a) than the RF electrode (20). By this, process data during the process can be estimated with high precision, and the process of the semiconductor wafer (W) in the semiconductor manufacturing device (100) can be carried out stably.

[0110] In addition, in the Euro structure (1) according to the embodiment, the gas (2) further has an RF electrode (20) located inside. Also, the thermocouple (10) is located at a position away from the first surface (2a) than the RF electrode (20). By this, process data during the process can be estimated with high precision, and the process of the semiconductor wafer (W) in the semiconductor manufacturing apparatus (100) can be carried out stably.

[0111] In addition, the semiconductor manufacturing apparatus (100) according to the embodiment is equipped with a loading platform (120), a chamber (110), and the above-described flow path structure (1). By doing so, the processing of the semiconductor wafer (W) can be performed while accurately estimating process data during the process.

[0112] Although embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible as long as they do not deviate from the spirit thereof. For example, a heater may be installed inside the gas (2) of the flow path structure (1) of the present disclosure. By doing so, the process gas flowing through the flow path (4) can be heated. In addition, the temperature of the heater may be measured by a thermocouple (10). In the present disclosure, local temperature measurement is possible by using a thermocouple (10), and the temperature distribution within the shower plate can be measured precisely by having a plurality of thermocouples (10).

[0113] Additional effects or other modes can be easily derived by those skilled in the art. For this reason, the broader form of the present disclosure is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications are possible without departing from the spirit or scope of the overall concept of the invention as defined by the appended claims and their equivalents. Explanation of the symbols

[0114] 1 Euro structure 2 aircraft 2a First side 3 districts 4 euros 4a Introduction Route 4b Explosion 4c branch 5 frogs 5A frog group 10 Thermoelectric Series 11. First metal wiring 12 Second metal wiring 100 semiconductor manufacturing devices 110 chambers 111 opening 120 loading racks

Claims

Claim 1 A flow path structure comprising a gas having a first surface and composed of ceramics, a flow path located inside the gas having a plurality of branch paths, a plurality of openings located on the first surface and each connected to the plurality of branch paths, a first metal wiring composed of a first metal with at least a portion located inside the gas, and a second metal wiring composed of a second metal different from the first metal with at least a portion located inside the gas, wherein the first metal wiring and the second metal wiring are connected inside the gas to form a thermocouple part having a thermocouple function, and when the first surface is viewed from the front, the first metal wiring and the second metal wiring surround the opening, and the thermocouple part is located around the opening. Claim 2 In claim 1, when the first surface is viewed from the front, the thermocouple portion is a fluid structure surrounding the opening. Claim 3 A flow path structure according to claim 1 or 2, wherein when the first surface is viewed from the front, the first metal wiring and the second metal wiring in the thermocouple portion are positioned overlappingly. Claim 4 In claim 1 or 2, the thermocouple part is a fluid structure having a region including the first metal and the second metal. Claim 5 In claim 1 or 2, when the first surface is viewed from the front, the thermocouple portion is a flow path structure located at a position further from the center of the first surface than a group of openings composed of a plurality of openings. Claim 6 In claim 5, the gas further has an RF electrode located inside, and when the first surface is viewed from the front, the thermocouple part is a flow path structure located at a position further from the center of the first surface than the RF electrode. Claim 7 In claim 5, the gas further has an RF electrode located inside, and the thermocouple part is a flow path structure located at a position away from the first surface than the RF electrode. Claim 8 A semiconductor manufacturing apparatus comprising a loading platform, a chamber, and a flow path structure described in claim 1 or 2.

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