High-pressure substrate processing apparatus and substrate processing method using it

Abstract

The present invention is characterized by comprising: a chamber providing a processing space for a substrate; a boosting unit providing pressurized air to the chamber to maintain the pressure inside the chamber above a set pressure; a processing liquid supply unit supplying a processing liquid from one side of a substrate housed in the chamber and rotated in the direction of the other side; and a foreign substance discharge unit providing an airflow of pressurized air from one side of the substrate to the direction of the other side to discharge moisture and foreign substances contained in the pressurized air along with the processing liquid.

Description

Technology Field

[0001] The present invention relates to a high-pressure substrate processing apparatus capable of maintaining the cleanliness of the chamber while allowing a substrate processing process to be carried out inside a chamber under a high-pressure state exceeding a set pressure. Background Technology

[0002] Generally, as light-emitting diode (LED) devices or semiconductor devices become more high-density, highly integrated, and high-performance, and as circuit pattern miniaturization progresses rapidly, the importance of substrate processing for etching the substrate surface or cleaning foreign substances such as flux, particles, organic contaminants, and metal contaminants remaining on the substrate surface is increasing.

[0003] A substrate processing device that etches or cleans a substrate processes the substrate surface using either a dry or a wet processing method. In particular, the wet processing method is a processing method using a processing liquid such as a chemical solution, and can be classified into a batch method that cleans multiple substrates simultaneously and a single-wafer method that cleans substrates individually.

[0004] A single-wafer processing device processes a substrate by spraying a chemical solution onto the surface of a substrate that is rotated at high speed while supported by a substrate support. The substrate support contacts the lower or outer surface of the substrate to support it, and a heating element is installed on the lower side of the substrate to heat the rotating substrate.

[0005] Multiple fluids are used to remove foreign substances remaining on the substrate, and since each requires a separate nozzle, there is a problem of increased installation costs. Therefore, there is a need to improve this.

[0006] The background technology of the present invention is disclosed in Korean Published Patent Application No. 2004-0023943 (published on March 20, 2004; Title of Invention: Single-wafer cleaning device capable of simultaneous cleaning of both sides). The problem to be solved

[0007] The present invention aims to provide a high-pressure substrate processing apparatus and a substrate processing method using the same, wherein, during a substrate processing operation such as an etching process in which a processing liquid is supplied to a substrate rotating at high speed inside a chamber where a set pressure is maintained, an airflow is formed that flows in the same or similar direction as the supply direction of the processing liquid, thereby allowing moisture and foreign substances contained in the pressurized air supplied inside the chamber to be discharged together with the air discharged from the chamber, so as to maintain the cleanliness inside the chamber. means of solving the problem

[0008] The present invention is characterized by comprising: a chamber providing a processing space for a substrate; a boosting unit providing pressurized air to the chamber to maintain the pressure inside the chamber above a set pressure; a processing liquid supply unit supplying a processing liquid from one side of a substrate housed in the chamber and rotated in the direction of the other side; and a foreign substance discharge unit providing an airflow of pressurized air from one side of the substrate to the direction of the other side to discharge moisture and foreign substances contained in the pressurized air along with the processing liquid.

[0009] The chamber may include: a support member that rotatably supports a substrate; an inlet for injecting pressurized air into one side of the chamber; a discharge port provided on the other side of the chamber to discharge pressurized air that is filled into the chamber, raises the internal pressure above a set pressure, and passes through the substrate and is discharged from the chamber; a supply port for supplying a processing liquid to one side of the chamber; and a discharge port provided on the other side of the chamber to discharge the processing liquid that is sprayed onto the substrate to carry out a processing process and passes through the substrate and is discharged from the chamber.

[0010] The above-mentioned boosting unit may include a first pressurizing unit comprising a first pressurizing unit and a valve installed in a supply line connected to the inlet port to pressurize air to the inlet port; and a pressure maintaining unit that controls the supply and discharge amounts of pressurized air so that when the pressure of the chamber rises above a set pressure due to the operation of the first pressurizing unit, the pressure inside the chamber is maintained above a set pressure.

[0011] The pressure maintaining unit may include: a second pressurizing unit installed in a line branching from the supply line to pressurize air to the inlet, a second pressurizing unit including a valve installed in the supply line and a first control unit for controlling the opening amount of the valve; and a first discharge line installed in the discharge port to control the flow rate of pressurized air discharged from the chamber according to the change in the flow rate of pressurized air supplied to the chamber by the operation of the second pressurizing unit.

[0012] The first discharge line may include a first valve installed at the discharge port; and a second control unit installed at the discharge port to control the opening amount of the first valve.

[0013] The above foreign substance discharge section may include: a filling space in which pressurized air supplied through the injection port is filled; a distribution member that evenly distributes and supplies the pressurized air filled in the filling space to the entire substrate; and a second discharge line in which moisture and foreign substances separated from the pressurized air are discharged to the outside of the chamber together with the processing liquid when the pressurized air discharged from the distribution member generates an airflow and passes through the substrate and is discharged along the first discharge line.

[0014] The second discharge line may include a second valve installed at the discharge port; and a third control unit installed at the discharge port to control the opening amount of the second valve.

[0015] The pressurized air discharged along the first discharge line is discharged by changing its discharge direction along the first discharge line, which is maintained at a relatively low pressure, and when the discharge direction of the pressurized air is changed, moisture and foreign substances separated from the pressurized air fall together with the treatment liquid and are discharged along the second discharge line. The first discharge line and the second discharge line may be arranged so as to be spaced apart from each other.

[0016] The present invention comprises: (a) a step of placing a substrate in a processing space of a chamber and rotating it; (b) a step of pressurizing air through an inlet of the chamber by operating a pressure boosting unit to increase the pressure inside the chamber to a set pressure; (c) a step of injecting a processing liquid through an outlet of the chamber by operating a processing liquid supply unit when the pressure inside the chamber reaches the set pressure and spraying it onto the substrate; and (d) a step of discharging the pressurized air and processing liquid that have passed the substrate to the outside of the chamber along a discharge line, wherein moisture and foreign substances contained in the pressurized air discharged after passing the substrate are discharged together with the processing liquid.

[0017] The above step (e) may be performed by a first discharge line including a first valve installed at the discharge port of the chamber and a second control unit installed at the discharge port to control the opening amount of the first valve; and a second discharge line including a second valve installed at the discharge port of the chamber and a third control unit installed at the discharge port to control the opening amount of the second valve.

[0018] The method may further include a step in which, when the above step (b) is performed and the pressure inside the chamber is increased above a set pressure, the pressure inside the chamber is maintained above a set pressure by the operation of the pressure maintaining unit, and an airflow passing through the substrate is provided by the operation of the foreign matter discharge unit. Effects of the invention

[0019] The high-pressure substrate processing apparatus and the substrate processing method using the same according to the present invention are equipped with a boosting unit capable of maintaining the pressure inside the chamber above a set pressure, so that the heating process, which supplies thermal energy to a substrate heated above a set temperature for processing, is carried out in a high-pressure environment, thereby having the advantage of reducing the time and cost required to heat the substrate to a set temperature.

[0020] In addition, the high-pressure substrate processing device and the substrate processing method using the same according to the present invention are equipped with a pressure maintaining unit that maintains the pressure inside the chamber at a set pressure after the pressure inside the chamber has risen to a set pressure. Therefore, this prevents malfunctions in which the pressure inside the chamber decreases below the set pressure during the substrate processing process and has the advantage of preventing the efficiency of the heating process from decreasing as the pressure inside the chamber drops below the set temperature.

[0021] In addition, the high-pressure substrate processing device and the substrate processing method using the same according to the present invention have the advantage of preventing interference between the pressurized air and the processing liquid by providing a flow of pressurized air in the same or similar direction as the supply direction of the processing liquid provided to the substrate, and preventing moisture and foreign substances contained in the pressurized air from remaining inside the chamber and on the substrate as they are discharged together with the processing liquid.

[0022] In addition, the high-pressure substrate processing device and the substrate processing method using the same according to the present invention have the advantage of being able to effectively discharge moisture and foreign substances contained in the pressurized air by maintaining the pressure inside the chamber above the set pressure and providing an airflow inside the chamber, by providing an airflow inside the chamber, by supplying pressurized air to the chamber to raise the pressure inside the chamber to a set pressure and a second pressurizing unit to control the pressure inside the chamber while adjusting the amount of pressurized air supplied after the pressure inside the chamber has risen to the set pressure.

[0023] In addition, the high-pressure substrate processing device and the substrate processing method using the same according to the present invention are provided with a first discharge line through which pressurized air supplied to a chamber is discharged and a second discharge line through which a processing liquid supplied to a chamber is discharged, spaced apart from each other. When the discharge direction of the pressurized air is changed toward the first discharge line, which maintains a relatively low pressure, the pressurized air is separated from the processing liquid and discharged along the first discharge line, thereby allowing the pressurized air and the processing liquid to be discharged separately. Furthermore, the pressurized air and processing liquid that are separated and discharged can be circulated back to the chamber for recycling, which is an advantage.

[0024] In addition, the high-pressure substrate processing device and the substrate processing method using the same according to the present invention have the advantage that, since the discharge directions of the pressurized air and the processing liquid discharged along the second discharge line are changed differently due to the pressure difference, moisture and foreign substances with a specific gravity greater than that of the pressurized air can be separated from the pressurized air and discharged along the second discharge line together with the processing liquid, thereby allowing the moisture and foreign substances to be removed by a processing liquid reprocessing process.

[0025] In addition, the high-pressure substrate processing device and the substrate processing method using the same according to the present invention have the advantage of being able to repeatedly remove moisture and foreign substances contained in the pressurized air circulated into the chamber by the first discharge line and the second discharge line, thereby more effectively improving the cleanliness inside the chamber. Brief explanation of the drawing

[0026] FIG. 1 is a perspective view showing a high-pressure substrate processing apparatus according to one embodiment of the present invention. FIG. 2 is a plan view showing a high-pressure substrate processing apparatus according to one embodiment of the present invention. FIG. 3 is a cross-sectional view showing a high-pressure substrate processing apparatus according to one embodiment of the present invention. FIG. 4 is a block diagram illustrating a high-pressure substrate processing apparatus according to one embodiment of the present invention. Specific details for implementing the invention

[0027] Hereinafter, an embodiment of a high-pressure substrate processing apparatus according to the present invention and a substrate processing method using the same will be described with reference to the attached drawings.

[0028] In this process, the thickness of the lines or the size of the components shown in the drawings may be exaggerated for the sake of clarity and convenience of explanation.

[0029] In addition, the terms described below are defined considering their functions in the present invention, and these may vary depending on the intention or practice of the user or operator.

[0030] Therefore, the definitions of these terms should be based on the content throughout this specification.

[0031] FIG. 1 is a perspective view showing a high-pressure substrate processing device according to one embodiment of the present invention, FIG. 2 is a plan view showing a high-pressure substrate processing device according to one embodiment of the present invention, FIG. 3 is a cross-sectional view showing a high-pressure substrate processing device according to one embodiment of the present invention, and FIG. 4 is a block diagram showing a high-pressure substrate processing device according to one embodiment of the present invention.

[0032] Referring to FIGS. 1 to 4, a high-pressure substrate processing device according to one embodiment of the present invention comprises a chamber (10) that provides a processing space for a substrate (100), a boosting unit (30) that provides pressurized air to the chamber (10) to maintain the pressure inside the chamber (10) above a set pressure, a processing liquid supply unit (70) that supplies a processing liquid from one side of a substrate (100) that is housed in the chamber (10) and rotated, and a foreign substance discharge unit (50) that provides a flow of pressurized air from one side of the substrate (100) to the other side to discharge moisture and foreign substances contained in the pressurized air along with the processing liquid.

[0033] Accordingly, after the substrate (100) is placed in the chamber (10), the pressure inside the chamber (10) is raised to 1-5 bar by the operation of the booster (30), and when the pressure and temperature inside the chamber (10) rise above the set value, the support member (58) is driven to rotate the substrate (100), and a processing operation such as an etching process is carried out by irradiating the rotating substrate (100) with a processing liquid by the operation of the processing liquid supply member (70).

[0034] At this time, in this embodiment, since a flow of pressurized air is formed in the same or similar direction as the supply direction of the processing liquid by the operation of the foreign substance discharge unit (50), moisture and foreign substances contained in the pressurized air are moved toward the discharge line side, thereby preventing condensation from occurring on the inner wall of the chamber (10) or foreign substances such as fumes or particles from remaining on the substrate (100).

[0035] The chamber (10) of the present embodiment includes a support member (58) that rotatably supports a substrate (100), an inlet (12) for injecting pressurized air into one side of the chamber (10), a discharge port (14) provided on the other side of the chamber (10) to discharge pressurized air that is filled into the chamber (10) to raise the internal pressure above a set pressure and passes through the substrate (100) and is discharged from the chamber (10), a supply port (16) for supplying a processing liquid to one side of the chamber (10), and a discharge port (not shown) provided on the other side of the chamber (10) to discharge the processing liquid that is sprayed onto the substrate (100) to carry out a processing process and passes through the substrate (100) and is discharged from the chamber (10).

[0036] The chamber (10) of the present embodiment is formed in a cylindrical shape as shown in FIG. 1, with an injection port (12) and a supply port (16) formed on one side of the upper portion, a discharge port (14) formed on one side of the lower portion, and a plurality of discharge ports provided on the lower side of the chamber (10).

[0037] The boosting unit (30) of the present embodiment includes a first pressurizing unit (32) including a first pressurizing unit and a valve installed in a supply line connected to an inlet (12) to pressurize air to the inlet (12), and a pressure maintaining unit (34) that controls the supply and discharge amounts of pressurized air so that when the pressure of the chamber (10) rises above a set pressure due to the operation of the first pressurizing unit (32), the pressure inside the chamber (10) is maintained above a set pressure.

[0038] Since the first pressurizing unit (32) consists of a first pressure-fed unit and a valve without a separate control unit, when the operation of the pressure-fed unit is initiated, the valve is fully opened so that the pressurized air supplied by the operation of the first pressure-fed unit fills the chamber (10) within a short time, thereby raising the pressure inside the chamber (10) to a set pressure.

[0039] As described above, when the pressure inside the chamber (10) rises to the set pressure within a short period of time, the operation of the first pressure conveying unit is stopped, and the operation of the pressure maintaining unit (34) prevents the pressure inside the chamber (10) from falling below the set pressure.

[0040] The pressure maintaining unit (34) of the present embodiment includes a second pressurizing unit (38) including a second pressurizing unit installed in a line branching from a supply line to pressurize air to an inlet (12), a valve installed in the supply line, and a first control unit (38a) that controls the opening amount of the valve, and a first discharge line (36) installed in a discharge port (14) to control the flow rate of pressurized air discharged from the chamber (10) according to the change in the flow rate of pressurized air supplied to the chamber (10) by the operation of the second pressurizing unit (38).

[0041] The first discharge line (36) of the present embodiment includes a first valve installed at the discharge port (14) and a second control unit (36a) installed at the discharge port (14) to control the opening amount of the first valve.

[0042] Accordingly, when the pressure inside the chamber (10) rises to the set pressure by the operation of the first pressurizing unit (32), the operation of the first pressurizing unit (32) is terminated, and the second pressurizing unit (38) is driven, and the supply amount of pressurized air is controlled by the operation of the first control unit (38a), and the discharge amount of pressurized air is controlled by the second control unit (36a) of the first discharge line (36), thereby preventing the pressure inside the chamber (10) from falling below the set pressure and simultaneously forming an airflow of pressurized air from the inlet (12) to the outlet (14).

[0043] At this time, in this embodiment, the airflow of pressurized air is evenly distributed over the entire substrate (100) by the action of the foreign substance discharge unit (50), so that moisture and foreign substances contained in the pressurized air can be prevented from remaining on any part of the substrate (100).

[0044] The foreign substance discharge unit (50) of the present embodiment includes a charging space (52) in which pressurized air supplied through an inlet (12) is filled, a distribution member (54) that evenly distributes and supplies the pressurized air filled in the charging space (52) to the entire substrate (100), and a second discharge line (56) in which moisture and foreign substances separated from the pressurized air are discharged to the outside of the chamber (10) together with the treatment liquid when the pressurized air discharged from the distribution member (54) creates an airflow and passes through the substrate (100) and is discharged along the first discharge line (36).

[0045] In this embodiment, the charging space (52) is formed in the shape of a disc that is elongated in the horizontal direction on the upper part of the chamber (10). Therefore, the pressurized air charged in the charging space (52) forms a disc shape similar to the flat shape of the substrate (100). When it passes through the distribution member (54) and is discharged, the pressurized air is evenly sprayed over the entire substrate (100) to form an airflow.

[0046] The distribution member (54) of the present embodiment may include a circular panel installed at the bottom of the charging space (52) and formed with a plurality of distribution holes (54a) spaced at regular intervals, and may be made of a filter member made of a porous material.

[0047] As described above, moisture and foreign substances contained in the pressurized air are moved to the discharge line side along with the airflow by the airflow pouring from the upper side to the lower side of the chamber (10), so that condensation is formed while remaining on the inner wall of the chamber (10), and foreign substances such as fumes and particles contained in the pressurized air are prevented from remaining on the inner wall of the chamber (10) and the substrate (100).

[0048] The second discharge line (56) of the present embodiment includes a second valve installed at the discharge port (18) and a third control unit (56a) installed at the discharge port (18) to control the opening amount of the second valve.

[0049] In addition, the pressurized air discharged along the first discharge line (36) of the present embodiment is discharged with its discharge direction changed along the first discharge line (36), which is maintained at a relatively low pressure, and when the discharge direction of the pressurized air is changed, moisture and foreign substances separated from the pressurized air fall together with the treatment liquid and are discharged along the second discharge line (56). Thus, the first discharge line (36) and the second discharge line (56) are spaced apart from each other.

[0050] The first discharge line (36) is formed by creating a ring-shaped or semicircular flow path at the bottom of the chamber (10), and since a flow path is formed that extends laterally from the ring-shaped flow path and then curves upward, the pressurized air discharged along the first discharge line (36) is discharged downward, then the discharge direction changes to the side, and then the discharge direction changes again to the upward direction.

[0051] As described above, the pressurized air discharged along the first discharge line (36) changes its discharge direction several times to the side or upward direction, and moisture or foreign substances with relatively high specific gravity are separated from the pressurized air and filtered to the second discharge line (56).

[0052] Therefore, the pressurized air discharged along the first discharge line (36) is discharged with moisture and foreign substances removed and is recirculated into the chamber (10), so that the cleanliness inside the chamber (10) can be maintained.

[0053] A method for processing a substrate (100) using a high-pressure substrate (100) processing device configured as described above comprises the steps of: placing the substrate (100) in the processing space of the chamber (10) and rotating it; pressurizing air being sent through the injection port (12) of the chamber (10) by the operation of the boosting unit (30) to increase the pressure inside the chamber (10) to a set pressure; when the pressure inside the chamber (10) reaches the set pressure, the pressure inside the chamber (10) is maintained above the set pressure by the operation of the pressure maintaining unit (34), and an airflow passing through the substrate (100) is provided by the operation of the foreign matter discharge unit (50); when an airflow is formed inside the chamber (10), a processing liquid is injected through the supply port (16) of the chamber (10) by the operation of the processing liquid supply unit (70) and sprayed onto the substrate (100); and the pressurized air and processing liquid passing through the substrate (100) follow the discharge line to the chamber (10). It includes a step of being discharged to the outside.

[0054] Accordingly, when a substrate (100) is placed on a plurality of support protrusions (59) provided inside the chamber (10), the pressure inside the chamber (10) is pressurized to a set pressure by the operation of the first pressurizing unit (32), and when the pressure and temperature inside the chamber (10) rise to a set value, after the operation of the first pressurizing unit (32) ends, the supply and discharge amounts of pressurized air are controlled by the operation of the second pressurizing unit (38) and the first discharge line (36), thereby maintaining the pressure inside the chamber (10) above the set pressure.

[0055] At this time, the step of discharging pressurized air and treatment liquid is performed by a first discharge line (36) including a first valve installed at the discharge port (14) of the chamber (10) and a second control unit installed at the discharge port (14) to control the opening amount of the first valve, a second valve installed at the discharge port (18) of the chamber (10), and a second discharge line (56) including a third control unit installed at the discharge port (18) to control the opening amount of the second valve.

[0056] As described above, when the pressure inside the chamber (10) is maintained above a set value, the substrate (100) is rotated by the operation of the support member (58), and the processing liquid is sprayed onto the substrate (100) by the operation of the processing liquid supply member (70), thereby proceeding with a substrate (100) processing operation such as an etching process.

[0057] At this time, in this embodiment, since an airflow is generated from the upper side to the lower side of the chamber (10) by the operation of the foreign substance discharge unit (50), moisture and foreign substances contained in the pressurized air discharged through the substrate (100) are discharged together with the treatment liquid, thereby preventing moisture from remaining on the inner wall of the chamber (10) and preventing foreign substances such as fumes and particles from remaining on the chamber (10) and the substrate (100).

[0058] In addition, in the chamber (10) of the present embodiment, a cup member (57) is installed to surround a support member (58) that supports a substrate (100). Therefore, the processing liquid supplied to the rotating substrate (100) is moved laterally by the centrifugal force of the substrate (100) after being applied to the substrate (100) and collected along the cup member (57), so that no processing liquid remains inside the chamber (10) and can be recycled.

[0059] Thus, it is possible to provide a high-pressure substrate processing apparatus and a substrate processing method using the same, wherein, while a substrate processing operation such as an etching process is performed in which a processing liquid is supplied to a substrate rotating at high speed inside a chamber where a set pressure is maintained, an airflow is formed that flows in the same or similar direction as the supply direction of the processing liquid, thereby allowing moisture and foreign substances contained in the pressurized air supplied inside the chamber to be discharged together with the air discharged from the chamber, thereby maintaining the cleanliness inside the chamber.

[0060] Although the present invention has been described with reference to an embodiment illustrated in the drawings, this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom.

[0061] In addition, although a high-pressure substrate processing device and a substrate processing method using the same have been described as examples, this is merely illustrative, and the processing device and the processing method using the same of the present invention may be used in products other than the high-pressure substrate processing device and the substrate processing method using the same.

[0062] Therefore, the true technical scope of protection of the present invention should be determined by the following patent claims. Explanation of the symbols

[0063] 10: Chamber 12: Inlet 14: Discharge port 16: Supply port 30: Boosting section 32: First pressurizing section 34: Pressure maintaining section 36: First discharge line 38 : Second pressurization unit 50 : Foreign matter discharge unit 52 : Charging space 54 : Distribution member 54a : Distribution hole section 56 : Second discharge line 57 : Cup part 58 : Support part 59 : Support projection 70 : Processing liquid supply section 100 : Substrate

Claims

Claim 1 A high-pressure substrate processing device characterized by comprising: a chamber providing a processing space for a substrate; a boosting unit providing pressurized air to the chamber to maintain the pressure inside the chamber above a set pressure; a processing liquid supply unit supplying a processing liquid from one side to the other side of a substrate housed in the chamber and rotated; a foreign matter discharge unit providing a flow of pressurized air from one side to the other side of the substrate to discharge moisture and foreign matter contained in the pressurized air along with the processing liquid; a first discharge line for controlling the flow rate of pressurized air discharged from the chamber; and a second discharge line spaced apart from the first discharge line, through which moisture and foreign matter separated from the pressurized air when discharged along the first discharge line are discharged outside the chamber along with the processing liquid. Claim 2 A high-pressure substrate processing device according to claim 1, wherein the chamber comprises: a support member that rotatably supports a substrate; an inlet port for injecting pressurized air into one side of the chamber; a discharge port provided on the other side of the chamber to discharge pressurized air that is filled into the chamber, raises the internal pressure above a set pressure, and passes through the substrate and is discharged from the chamber; a supply port for supplying a processing liquid to one side of the chamber; and a discharge port provided on the other side of the chamber to discharge the processing liquid that is sprayed onto the substrate to carry out a processing process and passes through the substrate and is discharged from the chamber. Claim 3 A high-pressure substrate processing apparatus according to claim 2, wherein the boosting unit comprises: a first pressurizing unit including a first pressurizing unit and a valve installed in a supply line connected to the inlet port to pressurize air to the inlet port; and a pressure maintaining unit that controls the supply and discharge amounts of pressurized air so that when the pressure of the chamber rises above a set pressure by the operation of the first pressurizing unit, the pressure inside the chamber is maintained above a set pressure. Claim 4 In paragraph 3, the pressure maintaining unit comprises a second pressurizing unit including a second pressurizing unit installed in a line branched from the supply line to pressurize air to the inlet, a valve installed in the supply line, and a first control unit that controls the opening amount of the valve, and the first discharge line controls the flow rate of pressurized air discharged from the chamber according to the change in the flow rate of pressurized air supplied to the chamber by the operation of the second pressurizing unit. Claim 5 A high-pressure substrate processing device according to claim 4, wherein the first discharge line comprises: a first valve installed at the discharge port; and a second control unit installed at the discharge port to control the opening amount of the first valve. Claim 6 In claim 5, the foreign substance discharge section comprises: a filling space section in which pressurized air supplied through the injection port is filled; and a distribution member that evenly distributes and supplies the pressurized air filled in the filling space section to the entire substrate; and the second discharge line is characterized in that when the pressurized air discharged from the distribution member generates an airflow and passes through the substrate, and is then discharged along the first discharge line, moisture and foreign substances separated from the pressurized air are discharged outside the chamber together with the processing liquid. Claim 7 A high-pressure substrate processing device according to claim 6, wherein the second discharge line comprises: a second valve installed at the discharge port; and a third control unit installed at the discharge port to control the opening amount of the second valve. Claim 8 A high-pressure substrate processing device according to claim 6, wherein pressurized air discharged along the first discharge line is discharged by changing its discharge direction along the first discharge line which is maintained at a relatively low pressure, and moisture and foreign substances separated from the pressurized air when the discharge direction of the pressurized air is changed fall together with the processing liquid and are discharged along the second discharge line. Claim 9 (a) a step of placing a substrate in the processing space of a chamber and rotating it; (b) a step of pressurizing air through the injection port of the chamber by operating a pressure boosting unit to increase the pressure inside the chamber to a set pressure; (c) a step of injecting a processing liquid through the supply port of the chamber by operating a processing liquid supply unit when the pressure inside the chamber reaches the set pressure and spraying it onto the substrate; and (d) a step of discharging the pressurized air and processing liquid that have passed through the substrate to the outside of the chamber along a discharge line, wherein moisture and foreign substances contained in the pressurized air discharged through the substrate are discharged together with the processing liquid, and the step (d) is characterized by discharging the pressurized air through a first discharge line and discharging the processing liquid through a second discharge line spaced apart from the first discharge line, and when the discharge direction of the pressurized air is changed toward the first discharge line, the pressurized air is separated from the processing liquid and discharged along the first discharge line to separate and discharge the pressurized air and the processing liquid. Claim 10 A method for processing a substrate using a high-pressure substrate processing device, wherein, in step (d) above, the first discharge line comprises a first valve installed at the discharge port of the chamber and a second control unit installed at the discharge port to control the opening amount of the first valve, and the second discharge line comprises a second valve installed at the discharge port of the chamber and a third control unit installed at the discharge port to control the opening amount of the second valve. Claim 11 delete

Images