Semiconductor device having high density deep trench capacitor and manufacturing method thereof

Abstract

A semiconductor device including a high-density deep trench capacitor and a method for manufacturing the same are provided. A semiconductor device including a high-density deep trench capacitor comprises a unit cell arranged in a matrix array on a substrate, wherein the unit cell is formed by arranging a trench array containing a plurality of trenches in each quadrant region enclosed by a first space region and a second space region spaced repeatedly along a first axis on the substrate, and a third space region and a fourth space region spaced repeatedly along a second axis perpendicular to the first axis, such that the trench array forms a pinwheel shape over the entire quadrant region, wherein at least three of the first to fourth space regions of the unit cell have different widths, and the unit cell is formed conformally and alternately within the trench and extends to the first to fourth space regions, and comprises an (MIM)n (n≥2) capacitor in which the uppermost layer and the lowermost layer are electrode layers, an insulating layer covering the capacitor, and said insulating layer It includes at least three different conductive contacts formed within and disposed in the first to fourth space regions, each contacting the electrode layer.

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