Composition for depositing silicon- containing thin film and silicon-containing thin film prepared using the same

Abstract

The present invention relates to a composition for depositing a silicon-containing thin film comprising a fluoroaminosilane compound as a precursor and a method for manufacturing a silicon-containing thin film using the same. The silicon-containing thin film produced therefrom not only has excellent chemical and thermal stability but also has a sufficiently low dielectric constant, so it is expected to be usefully applied as an insulating film for semiconductor devices, particularly as an insulating film for spacers.

Description

Technology Field

[0001] The present invention relates to a low dielectric silicon-containing thin film, and more specifically, to a composition for depositing a silicon-containing thin film comprising a novel fluoroaminosilane compound and a silicon-containing thin film produced therefrom. Background Technology

[0002] Silicon-containing thin films manufactured through various deposition methods, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD), are used in semiconductor technology as semiconductor substrates, diffusion masks, oxidation barriers, dielectric films, and insulating films.

[0003] Meanwhile, it is crucial for insulating films used as spacers in semiconductor devices to possess low dielectric constant and excellent etch resistance. Furthermore, since they must satisfy conditions such as processability and excellent chemical and thermal stability to be applied in actual processes, the required material properties of insulating films for spacers used in next-generation semiconductor devices are becoming increasingly sophisticated.

[0004] To address this, research is ongoing to lower the dielectric constant of silicon-containing thin films; however, problems persist, such as inability to secure a sufficiently low dielectric constant, reduced thermal stability and etch resistance, and decreased productivity due to the low film formation rate. Additionally, a method of doping with fluorine (F) after forming the silicon-containing film has been proposed as a way to simultaneously satisfy both low dielectric constant and etch resistance. However, this approach has limitations: the process becomes more complex due to the additional fluorine doping step, and the film quality deteriorates because doping primarily occurs near the surface, making it difficult to perform in regions deeper than the surface. Prior art literature

[0005] Korean Published Patent Application No. 10-2012-0099926 (September 12, 2012) The problem to be solved

[0006] One aspect of the present invention provides a silicon-containing thin film deposition composition capable of providing a high-quality low-dielectric thin film.

[0007] In addition, one aspect of the present invention provides a manufacturing method that enables the deposition of a thin film at a high thin film deposition rate and enables the production of a high-quality silicon-containing thin film through a simple manufacturing process.

[0008] In addition, one aspect of the present invention provides a fluoroaminosilane compound of a novel structure that can be usefully used as a precursor of the silicon-containing thin film. means of solving the problem

[0009] One aspect of the present invention provides a composition for depositing a silicon-containing thin film comprising a fluoroaminosilane compound represented by the following chemical formula 1.

[0010] [Chemical Formula 1]

[0011]

[0012] (In the above chemical formula 1,

[0013] A is hydrogen, (C1-C7)alkyl, fluoro, fluoro(C1-C7)alkyl or NR a R b And;

[0014] R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b And;

[0015] R a and R b Each is independently hydrogen or (C1-C7)alkyl;

[0016] R1 is a (C1-C7)alkyl;

[0017] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0018] R 11 is fluoro, and;

[0019] R 12 and R 13 Each independently consists of hydrogen, (C1-C7)alkyl, It is a fluoro or fluoro(C1-C7)alkyl.

[0020] Above, A is a fluoro or (C1-C4)alkyl; R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, or fluoro; R1 is a (C3-C7)branched alkyl; and R2 is a branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each can independently be hydrogen or (C1-C4)alkyl.

[0021] The above A may be fluoro or methyl.

[0022] The above fluoroaminosilane compound may be represented by the following chemical formula 2.

[0023] [Chemical Formula 2]

[0024]

[0025] (In the above chemical formula 2,

[0026] R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b And;

[0027] R a and R b Each is independently hydrogen or (C1-C7)alkyl;

[0028] R1 is a (C1-C7)alkyl;

[0029] R2 is a (C1-C7)alkyl or -Si(R11 )(R 12 )(R 13 ) and;

[0030] R 11 is fluoro, and;

[0031] R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0032] In the above Chemical Formula 1, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, or fluoro; R1 is branched (C3-C7)alkyl; and R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each can independently be hydrogen or (C1-C4)alkyl.

[0033] The above fluoroaminosilane compound may be represented by the following chemical formula 3.

[0034] [Chemical Formula 3]

[0035]

[0036] (In the above chemical formula 3,

[0037] R1 is a (C1-C7)alkyl;

[0038] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0039] R 11 is fluoro, and;

[0040] R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0041] The above fluoroaminosilane compound may be selected from the following compounds.

[0042]

[0043]

[0044]

[0045]

[0046]

[0047]

[0048]

[0049] Another aspect of the present invention provides a silicon-containing thin film prepared from a fluoroaminosilane compound represented by the following chemical formula 1 or a silicon-containing thin film deposition composition comprising the same.

[0050] [Chemical Formula 1]

[0051]

[0052] (In the above chemical formula 1,

[0053] A, R, R1, and R2 are identical to the definitions above.)

[0054] According to one embodiment, the silicon-containing thin film may further contain fluorine.

[0055] Another aspect of the present invention provides a method for manufacturing a silicon-containing thin film using a fluoroaminosilane compound represented by the following chemical formula 1 or a silicon-containing thin film deposition composition comprising the same.

[0056] [Chemical Formula 1]

[0057]

[0058] (In the above chemical formula 1,

[0059] A, R, R1, and R2 are identical to the definitions above.)

[0060] A method for manufacturing a silicon-containing thin film according to one embodiment may comprise: a) maintaining the temperature of a substrate mounted in a chamber at 100°C or higher; b) contacting a fluoroaminosilane compound represented by Formula 1 or a silicon-containing thin film deposition composition containing the same with respect to the substrate to adsorb it onto the substrate; and c) injecting a reaction gas into the substrate on which the fluoroaminosilane compound or the silicon-containing thin film deposition composition has been adsorbed to form a silicon-containing thin film.

[0061] The above manufacturing method can be performed using atomic layer deposition (ALD), vapor deposition (CVD), organometallic chemical vapor deposition (MOCVD), low-pressure vapor deposition (LPCVD), plasma enhanced vapor deposition (PECVD), or plasma enhanced atomic layer deposition (PEALD).

[0062] The above reaction gas may include oxygen (O2), ozone (O3), oxygen plasma, hydrogen (H2), hydrogen plasma, water (H2O), hydrogen peroxide (H2O2), nitrogen (NO2), nitric oxide (NO), nitrous oxide (N2O), ammonia (NH3), carbon dioxide (CO2), formic acid (HCOOH), acetic acid (CH3COOH), acetic anhydride ((CH3CO)2O), or a combination thereof.

[0063] The above silicon-containing thin film may be a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a silicon carbide film, a silicon fluoride oxide film, a silicon fluoride carbonide film, a silicon fluoride carbonitride film, or a silicon fluoride oxynitride film.

[0064] The above silicon-containing thin film may have a dielectric constant of 3.0 or less.

[0065] Another aspect of the present invention provides a fluoroaminosilane compound represented by the following chemical formula 1.

[0066] [Chemical Formula 1]

[0067]

[0068] (In the above chemical formula 1,

[0069] A is hydrogen, (C1-C7)alkyl, fluoro, fluoro(C1-C7)alkyl or NR a R b And;

[0070] R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b And;

[0071] R a and R b Each is independently hydrogen or (C1-C7)alkyl;

[0072] R1 is a (C1-C7)alkyl;

[0073] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0074] R 11 is fluoro, and;

[0075] R 12 and R 13 Each independently consists of hydrogen, (C1-C7)alkyl, It is a fluoro or fluoro(C1-C7)alkyl.

[0076] According to one embodiment, the fluoroaminosilane compound may be represented by the following chemical formula 2.

[0077] [Chemical Formula 2]

[0078]

[0079] (In the above chemical formula 2,

[0080] R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a Rb And;

[0081] R a and R b Each is independently hydrogen or (C1-C7)alkyl;

[0082] R1 is a (C1-C7)alkyl;

[0083] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0084] R 11 is fluoro, and;

[0085] R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0086] According to one embodiment, the fluoroaminosilane compound may be represented by the following chemical formula 3.

[0087] [Chemical Formula 3]

[0088]

[0089] (In the above chemical formula 3,

[0090] R1 is a (C1-C7)alkyl;

[0091] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0092] R 11 is fluoro, and;

[0093] R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl. Effects of the invention

[0094] A silicon-containing thin film deposition composition according to one embodiment of the present invention is easy to store and handle, enables thin film deposition with a high deposition rate, and allows high-quality low-dielectric silicon-containing thin films to be manufactured with high purity through a simple manufacturing process.

[0095] In addition, the silicon-containing thin film according to one embodiment not only exhibits excellent chemical and thermal stability but also has a sufficiently low dielectric constant, so it is expected to be usefully applied as an insulating film for semiconductor devices, particularly as a spacer for semiconductor miniaturization processes. Brief explanation of the drawing

[0096] Figure 1 shows the TGA and DSC analysis results of the difluor(diisopropyl)aminosilane prepared in Example 1. Figure 2 shows the results of the component analysis of the silicon-containing thin film prepared in Example 6. Specific details for implementing the invention

[0097] Unless otherwise defined in this specification, all technical and scientific terms have the same meaning as generally understood by those skilled in the art to which the present invention pertains. The terms used in the description herein are merely for the purpose of effectively describing specific embodiments and are not intended to limit the present invention.

[0098] The singular form used in this specification is intended to include the plural form unless specifically indicated otherwise in the context.

[0099] Additionally, numerical ranges used herein include lower and upper limits and all values ​​within the range, increments logically derived from the form and width of the defined range, all of which are limited values, and all possible combinations of upper and lower limits of numerical ranges defined in different forms. Unless otherwise specifically defined in this specification, values ​​outside the numerical range that may occur due to experimental error or rounding are also included in the defined numerical range.

[0100] The term “comprising” in this specification is an open description having an equivalent meaning to expressions such as “comprising,” “containing,” “having,” or “characterizing,” and does not exclude elements, materials, or processes not additionally listed.

[0101] The term "alkyl" in this specification refers to an organic radical derived from an aliphatic hydrocarbon by the removal of one hydrogen, and may include both linear and branched alkyl groups. The alkyl group may have 1 to 7, specifically 1 to 5, specifically 1 to 4 carbon atoms. The above linear alkyl includes, for example, methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, and n-heptyl, and the above branched alkyl includes, but is not limited to, isopropyl, sec-butyl, isobutyl, tert-butyl, isopentyl, 2-methylhexyl, 3-methylbutyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 4-methylhexyl, 5-methylhexyl, 2,3-dimethylbutyl, 2,3-dimethylpentyl, 2,4-dimethylpentyl, etc.

[0102] In this specification, the term "alkenyl" means a linear or branched unsaturated hydrocarbon radical containing one or more double bonds, and "alkynyl" means a linear or branched unsaturated hydrocarbon radical containing one or more triple bonds.

[0103] The present invention will be described in detail below.

[0104] A composition for depositing a silicon-containing thin film according to one aspect of the present invention comprises a precursor compound of a specific structure and can provide a high-quality low-dielectric silicon-containing thin film.

[0105] Specifically, according to one embodiment, the precursor compound may be a fluoroaminosilane compound represented by the following chemical formula 1.

[0106] [Chemical Formula 1]

[0107]

[0108] (In the above chemical formula 1,

[0109] A is hydrogen, (C1-C7)alkyl, fluoro, fluoro(C1-C7)alkyl or NR a R b And;

[0110] R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b And;

[0111] R a and R b Each is independently hydrogen or (C1-C7)alkyl;

[0112] R1 is a (C1-C7)alkyl;

[0113] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0114] R 11 is fluoro, and;

[0115] R 12 and R 13 Each independently consists of hydrogen, (C1-C7)alkyl, It is a fluoro or fluoro(C1-C7)alkyl.

[0116] The fluoroaminosilane compound represented by Chemical Formula 1 above can easily form a high-purity silicon-containing thin film at a high deposition rate by simultaneously possessing structural features such as, for example, Si-N bonds and at least one Si-F bond, and the silicon-containing thin film can further contain fluorine (F) and achieve a lower dielectric constant. Preferably, the composition for depositing a silicon-containing thin film according to one embodiment may be a composition for depositing a thin film containing fluorine and silicon, and the thin film produced therefrom has a low dielectric constant and can be used as an insulating film material for semiconductor devices, and additionally, the thin film can be used as a deposition inhibition layer material, in which case the fluoroaminosilane compound according to one embodiment can act as an inhibitor.

[0117] Specifically, in the above chemical formula 1, A is hydrogen, (C1-C4)alkyl, fluoro, fluoro(C1-C4)alkyl or NR a R b Igo; R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, fluoro, fluoro(C1-C4)alkyl, fluoro(C2-C4)alkenyl, fluoro(C2-C4)alkynyl or NR a R b and; R a and R b is each independently hydrogen or (C1-C4)alkyl; R1 is (C1-C4)alkyl; R2 is (C1-C4)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each is independently hydrogen, (C1-C4)alkyl, It can be a fluoro or fluoro(C1-C4)alkyl.

[0118] Specifically, in the above Chemical Formula 1, A is fluoro or (C1-C4)alkyl; R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, or fluoro; R1 is branched (C3-C7)alkyl; and R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each can independently be hydrogen or (C1-C4)alkyl.

[0119] For example, in the above chemical formula 1, A may be fluoro or methyl.

[0120] For example, in the above Chemical Formula 1, A is fluoro; R is hydrogen, (C1-C3)alkyl, (C2-C3)alkenyl, or fluoro; R1 is branched (C3-C5)alkyl; and R2 is branched (C3-C5)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each can independently be hydrogen or (C1-C3)alkyl.

[0121] The fluoroaminosilane compound represented by the above chemical formula 1 can be represented, for example, by the following chemical formula 2, and can provide a thin film with a lower dielectric constant.

[0122] [Chemical Formula 2]

[0123]

[0124] (In the above chemical formula 2,

[0125] R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b And;

[0126] R a and R b Each is independently hydrogen or (C1-C7)alkyl;

[0127] R1 is a (C1-C7)alkyl;

[0128] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0129] R 11 is fluoro, and;

[0130] R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0131] For example, in the above Chemical Formula 2, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, fluoro, fluoro(C1-C4)alkyl, fluoro(C2-C4)alkenyl, fluoro(C2-C4)alkynyl, or NR a R b and; R a and R b is each independently hydrogen or (C1-C4)alkyl; R1 is (C1-C4)alkyl; R2 is (C1-C4)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each can independently be hydrogen, (C1-C4)alkyl, fluoro, or fluoro(C1-C4)alkyl.

[0132] For example, in the above Chemical Formula 2, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, or fluoro; R1 is branched (C3-C7)alkyl, and R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R12 and R 13 Each can independently be hydrogen or (C1-C4)alkyl.

[0133] For example, in the above chemical formula 2, R is hydrogen, (C1-C3)alkyl, (C2-C3)alkenyl, or fluoro; R1 and R2 are identical and may be branched (C3-C7)alkyl, and more specifically, R1 and R2 are identical and may be branched (C3-C5)alkyl.

[0134] The fluoroaminosilane compound according to one embodiment may be selected from the following compounds, but is not limited thereto.

[0135]

[0136]

[0137]

[0138]

[0139]

[0140]

[0141]

[0142] A silicon-containing thin film deposition composition according to one embodiment necessarily includes a fluoroaminosilane compound represented by Chemical Formula 1 as a thin film deposition precursor, and the content of the compound represented by Chemical Formula 1 in the composition may be included within a range recognizable by a person skilled in the art, taking into account the thin film deposition conditions or thickness of the thin film, characteristics of the thin film, and application of the thin film.

[0143] In addition, one aspect of the present invention provides a method for manufacturing a silicon-containing thin film using a fluoroaminosilane compound represented by Formula 1 or a silicon-containing thin film deposition composition containing the same, and a silicon-containing thin film manufactured therefrom.

[0144] A method for manufacturing a silicon-containing thin film according to one embodiment can produce a high-quality silicon-containing thin film with a high deposition rate by using a composition comprising a fluoroaminosilane compound represented by Chemical Formula 1 as a precursor, and preferably can produce a fluorine and silicon-containing thin film.

[0145] Specifically, a method for manufacturing a silicon-containing thin film according to one embodiment can provide a high-quality fluorine and silicon-containing thin film in which fluorine (F) of the fluoroaminosilane compound represented by Chemical Formula 1 remains in the thin film.

[0146] According to one embodiment, any thin film containing silicon that can be manufactured within the scope recognizable by a person skilled in the art is possible. Specifically, it may be a silicon oxide film (SiO2), a silicon nitride film (SiN), a silicon carbonitride film (SiCN), a silicon carbide film (SiC), a silicon fluoride oxide film (SiOF), a silicon fluoride carbonate film (SiCF), a silicon fluoride carbonitride film (SiCNF), a silicon fluoride oxynitride film (SiONF), etc. In addition, various high-quality thin films containing silicon, or fluorine and silicon, can be manufactured within the scope recognizable by a person skilled in the art.

[0147] According to one embodiment, the silicon-containing thin film has excellent chemical and thermal stability and can be used for various applications, such as insulating films, diffusion barrier films, spacers, intermetallic dielectric materials, and protective film layers in the fabrication of electronic devices. In addition, according to one embodiment, the silicon-containing thin film can be used as a deposition inhibition layer, and in this case, the fluoroaminosilane compound according to one embodiment can act as an inhibitor.

[0148] In a method for manufacturing a silicon-containing thin film according to one embodiment, the thin film deposition method is not particularly limited as long as it is commonly used in the field, but, for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), or plasma enhanced atomic layer deposition (PEALD) may be used, and specifically, atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) may be used, but is not limited thereto.

[0149] Specifically, a method for manufacturing a silicon-containing thin film according to one embodiment is,

[0150] a) a step of maintaining the temperature of a substrate mounted in a chamber at 100 ℃ or higher;

[0151] b) a step of contacting a fluoroaminosilane compound according to one aspect of the present invention or a silicon-containing thin film deposition composition containing the same with a substrate to adsorb it onto the substrate; and

[0152] c) a step of forming a silicon-containing thin film by injecting a reaction gas into a substrate on which the above-mentioned fluoroaminosilane compound or silicon-containing thin film deposition composition is adsorbed; may be included.

[0153] More specifically, the method for manufacturing the silicon-containing thin film described above is,

[0154] a) a step of maintaining the temperature of a substrate mounted in a chamber at 100 ℃ or higher;

[0155] b) a step of contacting a fluoroaminosilane compound according to one embodiment of the present invention or a silicon-containing thin film deposition composition containing the same with a substrate, and adsorbing it onto the substrate;

[0156] c) a step of purging the residual deposition composition and by-products;

[0157] d) a step of forming a silicon-containing thin film by injecting a reaction gas into a substrate on which the silicon-containing thin film deposition composition is adsorbed; and

[0158] e) a step of purging residual reaction gas and by-products; may be included.

[0159] The above substrate may be a substrate comprising one or more semiconductor materials, such as Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC, InAs, and InP, provided that it is commonly used in the field, although it is not specifically limited; an SOI (Silicon On Insulator) substrate; a quartz substrate; or a glass substrate for a display; or a flexible plastic substrate such as polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), polycarbonate (PC), polyethersulfone (PES), or polyester.

[0160] In addition, in addition to forming the silicon-containing thin film directly on the substrate, a plurality of conductive layers, dielectric layers, insulating layers, etc., may be further formed between the substrate and the silicon-containing thin film.

[0161] For example, the temperature of the substrate can be specifically controlled to 100 to 800°C, or 300 to 800°C, or 400 to 700°C, and under the above temperature conditions, fluorine (F) of the fluoroaminosilane compound represented by Chemical Formula 1 can be retained in the thin film, and a high-quality thin film containing fluorine and silicon can be provided, and a thin film with a lower dielectric constant can be provided.

[0162] For example, the reaction gas may be supplied after being activated by generating a plasma of 50 to 1,000 W, or 100 to 800 W, or 400 to 600 W.

[0163] The types of the above reaction gases are not specifically limited as long as they are commonly used in the field, but may be, for example, oxygen (O2), ozone (O3), oxygen plasma, hydrogen (H2), hydrogen plasma, water (H2O), hydrogen peroxide (H2O2), nitrogen (NO2), nitric oxide (NO), nitrous oxide (N2O), ammonia (NH3), carbon dioxide (CO2), formic acid (HCOOH), acetic acid (CH3COOH), acetic anhydride ((CH3CO)2O), or a combination thereof. The purge gas may be nitrogen (N2), argon (Ar), and helium (He), or a combination thereof.

[0164] In a method for manufacturing a silicon-containing thin film according to one embodiment, deposition conditions may be controlled according to the structure or thermal properties of the desired thin film, and examples of deposition conditions according to one embodiment may include the input flow rate of the silicon-containing thin film deposition composition containing the compound of Formula 1, the input flow rate of the reaction gas and carrier gas, pressure, RF power, substrate temperature, etc. As a non-limiting example, the input flow rate of the silicon-containing thin film deposition composition is 10 to 1000 cc / min, the carrier gas is 10 to 1000 cc / min, the flow rate of the reaction gas is 1 to 3000 cc / min, the pressure is 0.5 to 10 torr, and the RF power and substrate temperature are as described above.

[0165] In addition, one aspect of the present invention provides a novel compound that can be used as a precursor for a silicon-containing thin film. Specifically, the novel compound may be a fluoroaminosilane compound represented by the following chemical formula 1.

[0166] [Chemical Formula 1]

[0167]

[0168] (In the above chemical formula 1,

[0169] A is hydrogen, (C1-C7)alkyl, fluoro, fluoro(C1-C7)alkyl or NR a R b And;

[0170] R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b And;

[0171] R a and R b Each is independently hydrogen or (C1-C7)alkyl;

[0172] R1 is a (C1-C7)alkyl;

[0173] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0174] R 11 is fluoro, and;

[0175] R 12 and R 13 Each independently consists of hydrogen, (C1-C7)alkyl, It is a fluoro or fluoro(C1-C7)alkyl.

[0176] The fluoroaminosilane compound represented by Chemical Formula 1 above can easily form high-purity silicon-containing thin films at a high deposition rate by simultaneously possessing structural features such as Si-N bonds and at least one Si-F bond. In addition, a thin film prepared from a silicon-containing thin film deposition composition according to one embodiment has a low dielectric constant and can be used as an insulating film material for semiconductor devices.

[0177] Specifically, in the above chemical formula 1, A is hydrogen, (C1-C4)alkyl, fluoro, fluoro(C1-C4)alkyl or NR a R b Igo; R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, fluoro, fluoro(C1-C4)alkyl, fluoro(C2-C4)alkenyl, fluoro(C2-C4)alkynyl or NR a R b and; R a and R b is each independently hydrogen or (C1-C4)alkyl; R1 is (C1-C4)alkyl, and R2 is (C1-C4)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each is independently hydrogen, (C1-C4)alkyl, It can be a fluoro or fluoro(C1-C4)alkyl.

[0178] For example, in the above chemical formula 1, A may be fluoro or methyl.

[0179] For example, in the above Chemical Formula 1, A is fluoro; R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, or fluoro; R1 is branched (C3-C7)alkyl, and R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R11 is fluoro and; R 12 and R 13 Each can independently be hydrogen or (C1-C4)alkyl.

[0180] For example, in the above Chemical Formula 1, A is fluoro; R is hydrogen, (C1-C3)alkyl, (C2-C3)alkenyl, or fluoro; R1 is branched (C3-C5)alkyl; and R2 is branched (C3-C5)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each can independently be hydrogen or (C1-C3)alkyl.

[0181] The fluoroaminosilane compound represented by the above chemical formula 1 can be represented, for example, by the following chemical formula 2, and can provide a thin film with a lower dielectric constant.

[0182] [Chemical Formula 2]

[0183]

[0184] (In the above chemical formula 2,

[0185] R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b And;

[0186] R a and R b Each is independently hydrogen or (C1-C7)alkyl;

[0187] R1 is a (C1-C7)alkyl;

[0188] R2 is a (C1-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;

[0189] R 11is fluoro, and;

[0190] R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

[0191] For example, in the above Chemical Formula 2, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, fluoro, fluoro(C1-C4)alkyl, fluoro(C2-C4)alkenyl, fluoro(C2-C4)alkynyl, or NR a R b and; R a and R b is each independently hydrogen or (C1-C4)alkyl; R1 is a branched (C3-C7)alkyl, and R2 is a branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and; R 11 is fluoro and; R 12 and R 13 Each can independently be hydrogen, (C1-C4)alkyl, fluoro, or fluoro(C1-C4)alkyl.

[0192] For example, in the above chemical formula 2, R is hydrogen, (C1-C3)alkyl, (C2-C3)alkenyl, or fluoro; R1 and R2 are identical and may be branched (C3-C7)alkyl, and more specifically, R1 and R2 are identical and may be branched (C3-C5)alkyl.

[0193] The fluoroaminosilane compound according to one embodiment may be selected from the following compounds, but is not limited thereto.

[0194]

[0195]

[0196]

[0197]

[0198]

[0199]

[0200]

[0201] Hereinafter, a method for preparing a fluoroaminosilane compound represented by Chemical Formula 1 according to one embodiment will be described in detail, but it is known that it can be synthesized by other methods recognizable by a person skilled in the art, and the organic solvent used is not limited, and the reaction time and temperature can also be changed within a range that does not deviate from the essence of the invention.

[0202] A method for preparing the above-mentioned fluoroaminosilane compound according to one embodiment may include: (A) a step of preparing a compound represented by the following formula 13 by reacting a compound represented by the following formula 11 with a compound represented by the following formula 12; and (B) a step of preparing a fluoroaminosilane compound of the following formula 1 by reacting a compound represented by the following formula 13 with a fluoride source.

[0203] [Chemical Formula 11]

[0204]

[0205] [Chemical Formula 12]

[0206]

[0207] [Chemical Formula 13]

[0208]

[0209] (In the above chemical formulas 11 to 13,

[0210] A' is Cl, hydrogen, (C1-C7)alkyl, fluoro(C1-C7)alkyl, or NR a R b And;

[0211] R' is Cl, hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, fluoro(C2-C7)alkynyl, or NR a R b And;

[0212] R a , R b , R1 and R2 are identical to the definitions in Chemical Formula 1 above.)

[0213] The above step (A) may be performed at 0 to 30°C for 1 to 10 hours, specifically at 10 to 30°C for 1 to 5 hours, but is not limited thereto and may be changed depending on the type and amount of reactant and solvent used.

[0214] Step (B) above can be performed by providing a fluoride source, and the fluoride source may be selected from alkali metal fluorides such as LiF, KF, NaF, RbF, CsF, or transition metal fluorides such as AgF, AgF2, ZnF2, CuF2, CuF2·H2O, NiF2, SnF2, InF3, ScF3, TiF3, MnF3, CoF3, CrF3, AuF3, FeF3, MnF3, BiF3, SbF3, but is not limited thereto.

[0215] In addition, the above step (B) may be performed at 0 to 30°C for 1 to 10 hours, specifically at 10 to 30°C for 1 to 5 hours, but is not limited thereto and may be changed depending on the type and amount of reactant and solvent used.

[0216] The above-described embodiment will be explained in more detail below through examples. However, the following examples are for illustrative purposes only and do not limit the scope of the claims.

[0217] The physical properties of the example were measured as follows.

[0218] 1) Thickness

[0219] The thickness of the fluorine and silicon-containing thin films was measured using an ellipsometer (OPTI-PROBE 2600, THERMA-WAVE).

[0220] 2) Thermal properties

[0221] To measure the thermal stability, volatility, and decomposition temperature of fluoroaminosilane compounds, thermogravimetric analysis (TGA, L81-II, LINSEIS) and differential scanning calorimeter (DSC) analysis were performed.

[0222] Synthesis of Fluoroaminosilane Compounds

[0223] [Example 1] Synthesis of Difluoro(Diisopropyl)aminosilane

[0224]

[0225] After installing a reflux apparatus in a flame-dried 2L flask under an anhydrous and inactive atmosphere, 200g (1.48mol) of trichlorosilane and 1018g (11.81mol) of n-hexane were added and cooled to -20℃ or below while stirring. While maintaining the temperature between -10 and 0℃, 329g (3.25mol) of diisopropylamine was slowly added. After the addition of diisopropylamine was finished, the temperature was slowly raised to room temperature, and the reaction was completed after stirring at room temperature for 3 hours. The reaction mixture was filtered, and the remaining filtrate was subjected to vacuum distillation to remove the solvent, thereby obtaining 250g (yield 85%, 1.26mol) of the target product, dichloro(diisopropyl)aminosilane (compound 1-(a)).

[0226] 114 g (3.12 mol) of lithium fluoride (LiF) and 838 g (6.24 mol) of diethyleneglycoldimethylether (DEGDME) were placed in a flame-dried 2 L flask under an anhydrous and inactive atmosphere, and 250 g (1.26 mol) of the previously prepared dichlorodiisopropylaminosilane was slowly added at room temperature. After the addition was finished, the mixture was stirred at room temperature for 3 hours to complete the reaction. The reaction mixture was filtered, and the filtrate was subjected to vacuum distillation at 34–36°C at 30 torr to obtain 157 g (0.94 mol) of the target compound, difluoro(diisopropyl)aminosilane (Compound 1, Difluoro-di-iso-propylaminosilane) (yield 75%, GC purity 98.5%).

[0227] 1 H-NMR (C6D6): 0.97ppm (d, 12H, Si-N(CH(CH3)2)2), 2.92ppm (m, 2H, Si-N((CH)(CH3)2)2)), 4.56ppm (t, 1H, Si-H)

[0228] 29 Si-NMR (C6D6): -50.87ppm (t, 1Si)

[0229] [Example 2] Synthesis of Difluoro(Diisopropyl)aminomethylsilane

[0230]

[0231] After installing a reflux apparatus in a flame-dried 2L flask under an anhydrous and inactive atmosphere, 200g (1.34mol) of trichloromethylsilane and 1153g (13.38mol) of n-hexane were added and cooled to -20℃ or below while stirring. While maintaining the temperature between -10 and 0℃, 298g (2.94mol) of diisopropylamine was slowly added. After the addition of diisopropylamine was finished, the temperature was slowly raised to room temperature, and the reaction was completed after stirring at room temperature for 3 hours. The reaction mixture was filtered, and the solvent was removed from the remaining filtrate under reduced pressure to obtain 229g (yield 80%, 1.07mol) of dichloro(diisopropyl)aminomethylsilane (compound 2-(a)).

[0232] 305 g (1.71 mol) of antimony(III) fluoride (SbF3) and 764 g (5.70 mol) of diethyleneglycoldimethylether (DEGDME) were added to a flame-dried 2 L flask under an anhydrous and inactive atmosphere, and 210 g (0.93 mol) of the previously prepared dichloro(diisopropyl)aminomethylsilane was slowly added. After the addition was finished, the mixture was stirred at room temperature for 1 hour to complete the reaction. The reaction mixture was filtered, and the filtrate was subjected to vacuum distillation at 44°C at 30 torr to obtain 155 g (0.85 mol) of the target compound, difluoro(diisopropyl)aminomethylsilane (Compound 2, Difluoro-di-iso-propylaminomethylsilane). (Yield 75%, GC purity 98%)

[0233] 1 H-NMR (C6D6): 0.19ppm (s, 3H, Si-CH3), 1.06ppm (d, 12H, Si-N(CH(CH3)2))2, 3.05ppm (m, 2H, Si-N((CH)(CH3)2))2)

[0234] [Example 3] Synthesis of Difluoro(Diisopropyl)aminovinylsilane

[0235]

[0236] After installing a reflux apparatus in a flame-dried 2L flask under an anhydrous and inactive atmosphere, 200g (1.24mol) of trichlorovinylsilane and 1067g (12.38mol) of n-hexane were added and stirred, then cooled to -20℃ or lower. While maintaining the temperature between -10 and 0℃, 276g (2.72mol) of diisopropylamine was slowly added. After the addition of diisopropylamine was finished, the temperature was slowly raised to room temperature, and the reaction was completed by stirring at room temperature for 6 hours. The reaction mixture was filtered, and the solvent was removed from the filtrate under reduced pressure to obtain 210g of dichloro(diisopropyl)aminovinylsilane (compound 3-(a)) (yield 75%, 0.93mol).

[0237] 249 g (1.39 mol) of SbF3 and 623 g (4.64 mol) of Diethyleneglycoldimethylether (DEGDME) were placed in a flame-dried 2 L flask under an anhydrous and inactive atmosphere, and 210 g (0.93 mol) of the previously prepared dichloro(diisopropyl)aminovinylsilane was slowly added at room temperature. After the addition was finished, the reaction was completed by stirring at room temperature for 1 hour. The reaction mixture was filtered, and the filtrate was subjected to vacuum distillation at 56°C at 30 torr to obtain 131 g (0.65 mol) of the target compound, difluoro(diisopropyl)aminovinylsilane (Compound 3, Difluoro-di-iso-propylaminovinylsilane). (Yield 70%, GC purity 95%)

[0238] 1H-NMR (C6D6): 1.03ppm (d, 12H, Si-N(CH(CH3)2))2, 3.15ppm (m, 2H, Si-N((CH)(CH3)2))2), 5.8~6.1ppm (m, 3H, Si-CH=CH2)

[0239] [Example 4] Synthesis of Trifluoro(Diisopropyl)aminosilane

[0240]

[0241] 514.0 g (3.03 mol) of tetrachlorosilane and 3710.0 g (51.43 mol) of pentane were added to a flame-dried 10 L flask under an anhydrous and inactive atmosphere. 673.5 g (6.66 mol) of diisopropylamine was slowly added at room temperature and stirred for 5 hours at room temperature. After the reaction was complete, the reaction mixture was filtered to remove diisopropylamine hydrochloride, and then the solvent was removed at 60°C at 6 torr to produce 638.9 g (yield 90.0%) of trichloro(diisopropyl)aminosilane (compound 4-(a)).

[0242] 636.5 g (2.71 mol) of the previously prepared trichloro(diisopropyl)aminosilane and 1194.0 g (8.90 mol) of diethyleneglycoldimethylether were added to a flame-dried 3 L flask under an anhydrous and inactive atmosphere and stirred. While maintaining the reactor temperature at 20–50°C, 727.4 g (4.07 mol) of antimony(III) fluoride was added. The solvent was removed at 30°C at 26 torr, and the mixture was purified at 110°C at 760 torr to produce 261.3 g (yield 52.0%) of trifluoro(diisopropyl)aminosilane (Trifluoro-di-iso-propylaminosilane, Compound 4).

[0243] 1 H NMR (C6D6): 0.98ppm (d, 12H, N-(CH- ( CH 3 ) 2)2), 2.96ppm (m, 2H, N-( CH- (CH3)2)2)

[0244] 13 C NMR (C6D6): 46.62ppm (s, 2C, N-( CH- (CH3)2)2), 23.44ppm (s, 4C, N-(CH-( CH 3 )2)2)

[0245] 29 Si NMR (C6D6): -83.22ppm (q, 1Si)

[0246] [Example 5] Synthesis of Trifluoro(Diisopropyl)aminosilane

[0247] 427.0 g (3.15 mol) of trichlorosilane and 3866.60 g (53.59 mol) of pentane were added to a flame-dried 10 L flask under an anhydrous and inactive atmosphere. 701.8 g (6.94 mol) of diisopropylamine was slowly added at room temperature and stirred for 5 hours at room temperature. After the reaction was complete, the reaction mixture was filtered to remove diisopropylamine hydrochloride, and then filtered to remove the solvent under conditions of 60°C at 10 torr to produce 568.0 g (yield 90.0%) of dichloro(diisopropyl)aminosilane.

[0248] 567.0 g (2.83 mol) of the previously prepared dichloro(diisopropyl)aminosilane and 912.0 g (6.80 mol) of diethyleneglycoldimethylether were added to a flame-dried 3 L flask under an anhydrous and inactive atmosphere and stirred. 759.5 g (4.25 mol) of antimony(III) fluoride was added while maintaining the temperature at 20–50°C. The solvent was removed at 30°C at 26 torr, and the mixture was purified at 110°C at 760 torr to produce 135.0 g (yield 25.7%) of trifluoro(diisopropyl)aminosilane.

[0249] 1 H NMR (in C6D6): 0.98ppm (d, 12H, N-(CH- ( CH 3 ) 2)2), 2.96ppm (m, 2H, N-( CH -(CH3)2)2)

[0250] 13C NMR (in C6D6): 46.62ppm (s, 2C, N-( CH -(CH3)2)2), 23.44ppm (s, 4C, N-(CH- ( CH 3 ) 2)2)

[0251] 29 Si NMR (in C6D6): -83.22ppm (q, 1Si)

[0252] Figure 1 shows the results of thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) of the difluoro(diisopropyl)aminosilane prepared in Example 1. Referring to Figure 1, it can be seen that the compound of Example 1 has a single evaporation step at approximately 100°C, exhibits rapid vaporization characteristics with a very low residue mass, and is almost entirely vaporized without thermal decomposition. Additionally, the DSC graph shows that the fluoroaminosilane compound of Example 1 has excellent thermal stability.

[0253] <Fluorine and Silicon-Containing Thin Film Deposition>

[0254] [Example 6]

[0255] Fluorine and silicon-containing thin films were prepared using the known Atomic Layer Deposition (ALD) method. The compound prepared in Example 1 above was used as the precursor, and oxygen was used as the reaction gas.

[0256] A silicon substrate was used as the substrate on which the fluorine and silicon-containing thin film was to be formed, and the silicon substrate was transferred into a deposition chamber and maintained at a constant temperature as listed in Table 1 below.

[0257] The vaporized precursor was transported into the chamber using argon gas as the carrier and adsorbed onto the silicon substrate. Subsequently, a purging process was performed using argon gas. A reaction process was carried out using oxygen as the reaction gas. Additionally, a purging process was performed using argon gas to remove reaction byproducts. Fluorine and silicon-containing thin films were formed by repeating the above atomic layer deposition process as one cycle for a certain period, and the detailed evaluation conditions and results are shown in Table 1.

[0258] Precursor Substrate temperature Precursor injection fudge Reaction gas fudge to give deposition rate Argon bubble hour argon hour oxygen hour argon hour ℃ sccm sec sccm sec sccm sec F / m sec No. Å / cycle Example 1 630 100 1 1000 10 2000 1 1000 10 100 0.24

[0259] [Example 7]

[0260] Fluorine and silicon-containing thin films were prepared using the known Chemical Vapor Deposition (CVD) method. The compound prepared in Example 1 above was used as the precursor, and oxygen, hydrogen, ammonia, and water were used as reaction gases.

[0261] A silicon substrate was used as the substrate on which the fluorine and silicon-containing thin film was to be formed, and the silicon substrate was transferred into a deposition chamber and maintained at a constant temperature as listed in Table 2 below.

[0262] The vaporized precursor was transported into the chamber using argon gas as the carrier gas, and simultaneously, the reaction process was carried out using reaction gases oxygen, hydrogen, ammonia, and water, and the precursor was adsorbed onto the silicon substrate. Subsequently, a purging process was performed using argon gas to remove reaction byproducts. A fluorine and silicon-containing thin film was formed by performing the chemical vapor deposition described above for 5 minutes, and the detailed evaluation conditions and results are shown in Table 2.

[0263] Precursor Substrate temperature Precursor Reaction gas fudge CVDTime deposition rate Argon bubble oxygen hydrogen ammonia water argon hour ℃ sccm sccm sccm sccm sccm sccm sec min Å / min Example 1 400 100 2000 - - - 3000 180 5 3.4 400 100 - - 2000 - 3000 180 5 4.5 400 100 - - - 100 3000 180 5 4.8 630 100 2000 - - - 3000 180 5 6.1 630 100 2000 2000 - - 3000 180 5 8.9 630 100 - - 2000 - 3000 180 5 4.4 630 100 - - - 100 3000 180 5 5.5

[0264] [Example 8]

[0265] Fluorine and silicon-containing thin films were prepared using the known Atomic Layer Deposition (ALD) method. As precursors, the compound prepared in Example 1 and the HCDS (hexachlorodisilane, Si2Cl6) compound were used, and oxygen and ammonia were used as reaction gases.

[0266] A silicon substrate was used as the substrate on which the silicon-containing thin film was to be formed, and the silicon substrate was transferred into a deposition chamber and maintained at a constant temperature of 630°C.

[0267] Two vaporized precursors were simultaneously transported into a chamber using argon gas as a carrier and adsorbed onto a silicon substrate, after which a purging process was performed using argon gas. Subsequently, a reaction process was carried out using oxygen, the first reaction gas, followed by a purging process using argon gas. Afterward, a reaction process was carried out using ammonia, the second reaction gas, followed by a purging process using argon gas to remove reaction byproducts. Fluorine and silicon-containing thin films were formed by repeating the above atomic layer deposition process as one cycle for a certain period, and the detailed evaluation conditions and results are shown in Table 3.

[0268] Precursor Substrate temperature Precursor injection fudge 1 st reaction gas fudge 2 nd reaction gas fudge to give deposition rate Argon bubble hour argon hour oxygen hour argon hour ammonia hour argon hour ℃ sccm sec sccm sec sccm sec sccm sec sccm sec sccm sec No. Å / cycle Example 1 +HCDS 630 100 5 1000 5 2000 5 1000 5 2000 5 1000 5 300 0.96

[0269] Figure 2 shows the composition of the thin film when ALD evaluated the deposition of the mixed precursor of the HCDS and the compound of Example 1 analyzed using X-ray photoelectron spectroscopy, and Table 4 below summarizes the atomic content values ​​within the thin film. As a result, it was confirmed that fluorine-containing silicon oxide (SiOF) was formed, and the Cl content within the thin film was confirmed to be less than 1% of surface impurities.

[0270] Membrane composition (at%) C N O Si Cl F 3.2 22.0 30.7 41.7 0.8 1.5

Claims

Claim 1 A composition for depositing a silicon-containing thin film comprising a fluoroaminosilane compound represented by the following chemical formula 1. [Chemical Formula 1] In the above chemical formula 1, A is hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl; R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, or fluoro(C2-C7)alkynyl; R1 is branched (C3-C7)alkyl; R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 Each independently consists of hydrogen, (C1-C7)alkyl, It is a fluoro or fluoro(C1-C7)alkyl. Claim 2 In claim 1, A is fluoro or (C1-C4)alkyl; R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl or fluoro; R1 is branched (C3-C7)alkyl; and R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 A silicon-containing thin film deposition composition, each independently hydrogen or (C1-C4)alkyl. Claim 3 A silicon-containing thin film deposition composition according to claim 1, wherein A is a fluoro or methyl. Claim 4 A silicon-containing thin film deposition composition according to claim 1, wherein the fluoroaminosilane compound is represented by the following chemical formula 2. [Chemical Formula 2] In the above Chemical Formula 2, R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, or fluoro(C2-C7)alkynyl; R1 is branched (C3-C7)alkyl; and R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl. Claim 5 In claim 4, R is hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl or fluoro; R1 is branched (C3-C7)alkyl; and R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 A silicon-containing thin film deposition composition, each independently hydrogen or (C1-C4)alkyl. Claim 6 A silicon-containing thin film deposition composition according to claim 1, wherein the fluoroaminosilane compound is represented by the following chemical formula 3. [Chemical Formula 3] In the above chemical formula 3, R1 is a branched (C3-C7)alkyl; R2 is a branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl. Claim 7 In claim 6, R1 is a branched (C3-C7)alkyl; R2 is a branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 A silicon-containing thin film deposition composition, each independently hydrogen or (C1-C4)alkyl. Claim 8 A silicon-containing thin film deposition composition according to claim 1, wherein the fluoroaminosilane compound is selected from the following compounds. Claim 9 A silicon-containing thin film prepared from a fluoroaminosilane compound represented by the following chemical formula 1 or a silicon-containing thin film deposition composition comprising the same. [Chemical Formula 1] In the above chemical formula 1, A, R, R1 and R2 are the same as the definitions in claim 1 above. Claim 10 In claim 9, the silicon-containing thin film further contains fluorine. Claim 11 A method for manufacturing a silicon-containing thin film using a fluoroaminosilane compound represented by the following chemical formula 1 or a composition for depositing a silicon-containing thin film containing the same. [Chemical Formula 1] In the above chemical formula 1, A, R, R1 and R2 are the same as the definitions in claim 1 above. Claim 12 A method for manufacturing a silicon-containing thin film according to claim 11, comprising: a) maintaining the temperature of a substrate mounted in a chamber at 100°C or higher; b) contacting a fluoroaminosilane compound represented by Formula 1 or a silicon-containing thin film deposition composition containing the same with respect to the substrate to adsorb it onto the substrate; and c) injecting a reaction gas into the substrate on which the fluoroaminosilane compound or the silicon-containing thin film deposition composition is adsorbed to form a silicon-containing thin film. Claim 13 In claim 11, the above manufacturing method is a method for manufacturing a silicon-containing thin film, wherein the manufacturing method is performed by atomic layer deposition (ALD), vapor deposition (CVD), organometallic chemical vapor deposition (MOCVD), low-pressure vapor deposition (LPCVD), plasma-enhanced vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD). Claim 14 A method for manufacturing a silicon-containing thin film according to claim 12, wherein the reaction gas comprises oxygen (O2), ozone (O3), oxygen plasma, hydrogen (H2), hydrogen plasma, water (H2O), hydrogen peroxide (H2O2), nitrogen (NO2), nitric oxide (NO), nitrous oxide (N2O), ammonia (NH3), carbon dioxide (CO2), formic acid (HCOOH), acetic acid (CH3COOH), acetic anhydride ((CH3CO)2O), or a combination thereof. Claim 15 A method for manufacturing a silicon-containing thin film according to claim 11, wherein the silicon-containing thin film is a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a silicon carbide film, a silicon fluoride silicon oxide film, a silicon fluoride silicon carbonide film, a silicon fluoride silicon carbonitride film, or a silicon fluoride silicon oxynitride film. Claim 16 A method for manufacturing a silicon-containing thin film according to claim 11, wherein the silicon-containing thin film has a dielectric constant of 3.0 or less. Claim 17 Fluoroaminosilane compounds represented by the following chemical formula 1. [Chemical Formula 1] In the above chemical formula 1, A is hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl; R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, or fluoro(C2-C7)alkynyl; R1 is branched (C3-C7)alkyl; R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 Each independently consists of hydrogen, (C1-C7)alkyl, It is a fluoro or fluoro(C1-C7)alkyl. Claim 18 In claim 17, a fluoroaminosilane compound represented by the following chemical formula 2. [Chemical Formula 2] In the above Chemical Formula 2, R is hydrogen, (C1-C7)alkyl, (C2-C7)alkenyl, (C2-C7)alkynyl, fluoro, fluoro(C1-C7)alkyl, fluoro(C2-C7)alkenyl, or fluoro(C2-C7)alkynyl; R1 is branched (C3-C7)alkyl; and R2 is branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl. Claim 19 In claim 17, a fluoroaminosilane compound represented by the following chemical formula 3. [Chemical Formula 3] In the above chemical formula 3, R1 is a branched (C3-C7)alkyl; R2 is a branched (C3-C7)alkyl or -Si(R 11 )(R 12 )(R 13 ) and;R 11 is fluoro and;R 12 and R 13 Each is independently hydrogen, (C1-C7)alkyl, fluoro, or fluoro(C1-C7)alkyl.

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