Vapor-deposition mask manufacturing method and vapor-deposition mask device manufacturing method

Abstract

The method for determining the quality of a deposition mask according to the present disclosure comprises a measurement process for measuring a dimension X1 from point P1 to point Q1 and a dimension X2 from point P2 to point Q2, and a determination process for determining the quality of a deposition mask based on the dimensions X1 and X2 measured in the measurement process.

Description

Technology Field

[0001] The present disclosure relates to a method for determining the quality of a deposition mask, a method for manufacturing a deposition mask, a method for manufacturing a deposition mask device, a method for selecting a deposition mask, and a deposition mask. Background Technology

[0002] In recent years, there has been a demand for high precision for display devices used in portable devices such as smartphones and tablet PCs, for example, for a pixel density of 500 ppi or higher. In addition, there is a growing demand for ultra-high definition in portable devices, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or higher.

[0003] Among display devices, organic EL display devices are attracting attention due to their good responsiveness, low power consumption, and high contrast. As a method for forming pixels of an organic EL display device, a method is known in which pixels are formed in a desired pattern using a deposition mask having through holes arranged in a desired pattern (see, for example, Patent Document 1). Specifically, a deposition mask is first installed and attached to a substrate for an organic EL display device, and then both the attached deposition mask and the substrate are placed in a deposition device, and a deposition process is performed to deposit an organic material onto the substrate. In this case, in order to precisely manufacture an organic EL display device having a high pixel density, it is required to precisely reproduce the position of the through holes of the deposition mask during installation according to the design. Prior art literature

[0004] Japanese Patent Publication No. 2001-234385 The problem to be solved

[0005] The present disclosure aims to provide a method for determining the quality of a deposition mask, a method for manufacturing a deposition mask, a method for manufacturing a deposition mask device, a method for selecting a deposition mask, and a deposition mask, which can improve the positional accuracy of a through hole during installation. means of solving the problem

[0006] A first aspect of the present disclosure is,

[0007] A deposition mask extending in a first direction, a first central axis line extending in the first direction and positioned at a center in a second direction orthogonal to the first direction, a point P1 and a point Q1 provided on one side of the first central axis line and spaced apart from each other along the first direction, and a method for determining the quality of a deposition mask having a point P2 and a point Q2 provided on the other side of the first central axis line and spaced apart from each other along the first direction.

[0008] A measurement process for measuring the dimension X1 from point P1 to point Q1 and the dimension X2 from point P2 to point Q2, and

[0009] A method for determining the quality of a deposition mask, comprising a determination process for determining the quality of the deposition mask based on the dimensions X1 and X2 measured in the above measurement process.

[0010] am.

[0011] As a second aspect of the present disclosure, in a method for determining the quality of a deposition mask according to the first aspect described above,

[0012] In the above determination process, the design values ​​of the dimension X1 and the dimension X2 are α X When it was said,

[0013]

[0014] To determine whether it satisfies,

[0015] You can do it.

[0016] As a third aspect of the present disclosure, in a method for determining the quality of a deposition mask according to the first or second aspect described above,

[0017] The above deposition mask has a plurality of through holes, and

[0018] In the above determination process, the design values ​​of the dimension X1 and the dimension X2 are α X , the design values ​​of the dimensions from point P1 to point P2 and the dimensions from point Q1 to point Q2 are α Y , the maximum value among the distances between the center points of the two through holes in the second direction is W Y When it was said,

[0019]

[0020] To determine whether it satisfies,

[0021] You can do it.

[0022] As a fourth aspect of the present disclosure, in a method for determining the quality of a deposition mask according to each of the first to third aspects described above,

[0023] The above P1 point and the above P2 point are intended to be arranged symmetrically with respect to the first central axis during deposition, and the above Q1 point and the above Q2 point are intended to be arranged symmetrically with respect to the first central axis during deposition,

[0024] You can do it.

[0025] As a fifth aspect of the present disclosure, in a method for determining the quality of a deposition mask according to each of the first to fourth aspects described above,

[0026] The above P1 point and the above P2 point are positioned on one side with respect to the second central axis line positioned at the center position of the first direction, and

[0027] The above Q1 point and the above Q2 point are positioned on the other side with respect to the above second central axis,

[0028] You can do it.

[0029] As a sixth aspect of the present disclosure, in a method for determining the quality of a deposition mask according to the fifth aspect described above,

[0030] The above P1 point and the above Q1 point are intended to be arranged symmetrically with respect to the second central axis during deposition, and the above P2 point and the above Q2 point are intended to be arranged symmetrically with respect to the second central axis during deposition.

[0031] You can do it.

[0032] The seventh aspect of the present disclosure is,

[0033] The process of preparing a deposition mask, and

[0034] A method for manufacturing a deposition mask comprising a process for determining the quality of a deposition mask by a method for determining the quality of a deposition mask according to each of the first to sixth embodiments described above.

[0035] am.

[0036] The eighth aspect of the present disclosure is,

[0037] A method for manufacturing a deposition mask having a deposition mask extending in a first direction, a first central axis line extending in the first direction and positioned at a center in a second direction orthogonal to the first direction, points P1 and Q1 provided on one side of the first central axis line and spaced apart from each other along the first direction, and points P2 and Q2 provided on the other side of the first central axis line and spaced apart from each other along the first direction.

[0038] The process of preparing the above deposition mask, and

[0039] A measurement process for measuring the dimension X1 from point P1 to point Q1 and the dimension X2 from point P2 to point Q2, and

[0040] In the above measurement process, the measured dimensions X1 and X2 are the design values ​​α of dimensions X1 and X2. X When it was said,

[0041]

[0042] A method for manufacturing a deposition mask comprising a selection process for selecting the deposition mask satisfying the above criteria.

[0043] am.

[0044] As a ninth aspect of the present disclosure, in a method for manufacturing a deposition mask according to the eighth aspect described above,

[0045] The above deposition mask has a plurality of through holes, and

[0046] In the above selection process, the design values ​​of the dimension X1 and the dimension X2 are α X , the design values ​​of the dimensions from point P1 to point P2 and the dimensions from point Q1 to point Q2 are α Y , the maximum value among the distances between the center points of the two through holes in the second direction is W Y When it was said,

[0047]

[0048] To select the above deposition mask that satisfies the above,

[0049] You can do it.

[0050] The tenth aspect of the present disclosure is,

[0051] A method for manufacturing a deposition mask having a plurality of through holes extending in a first direction, a first central axis line extending in the first direction and positioned at a center in a second direction orthogonal to the first direction, points P1 and Q1 provided on one side of the first central axis line and spaced apart from each other along the first direction, and points P2 and Q2 provided on the other side of the first central axis line and spaced apart from each other along the first direction.

[0052] The process of preparing the above deposition mask, and

[0053] A measurement process for measuring the dimension X1 from point P1 to point Q1 and the dimension X2 from point P2 to point Q2, and

[0054] In the above measurement process, the measured dimensions X1 and X2 are the design values ​​α of dimensions X1 and X2. X , the design values ​​of the dimensions from point P1 to point P2 and the dimensions from point Q1 to point Q2 are α Y , the maximum value among the distances between the center points of the two through holes in the second direction is W Y When it was said,

[0055]

[0056] A method for manufacturing a deposition mask comprising a selection process for selecting the deposition mask satisfying the above criteria.

[0057] am.

[0058] In addition, the 7th to 10th embodiments may be deposition masks manufactured by the method for manufacturing the deposition masks of the 7th to 10th embodiments.

[0059] The eleventh aspect of the present disclosure is,

[0060] A process for preparing the deposition mask by a method for manufacturing the deposition mask according to each of the above-described 7th embodiment to the above-described 10th embodiment, and

[0061] A method for manufacturing a deposition mask device comprising a process of applying tension in the first direction to the deposition mask and mounting the deposition mask on a frame.

[0062] am.

[0063] In addition, the 11th embodiment may be a deposition mask device manufactured by the method of manufacturing the deposition mask device of the 11th embodiment.

[0064] The 12th aspect of the present disclosure is,

[0065] A method for selecting a deposition mask having a deposition mask extending in a first direction, a first central axis line extending in the first direction and positioned at a center of a second direction orthogonal to the first direction, points P1 and Q1 provided on one side of the first central axis line and spaced apart from each other along the first direction, and points P2 and Q2 provided on the other side of the first central axis line and spaced apart from each other along the first direction.

[0066] A measurement process for measuring the dimension X1 from point P1 to point Q1 and the dimension X2 from point P2 to point Q2, and

[0067] In the above measurement process, the measured dimensions X1 and X2 are the design values ​​α of dimensions X1 and X2. X When it was said,

[0068]

[0069] This is a method for selecting a deposition mask, comprising a selection process for selecting the deposition mask that satisfies the above conditions.

[0070] The 13th aspect of the present disclosure is,

[0071] A method for selecting a deposition mask having a plurality of through holes extending in a first direction, a first central axis line extending in the first direction and positioned at a center in a second direction orthogonal to the first direction, points P1 and Q1 provided on one side of the first central axis line and spaced apart from each other along the first direction, and points P2 and Q2 provided on the other side of the first central axis line and spaced apart from each other along the first direction.

[0072] A measurement process for measuring the dimension X1 from point P1 to point Q1 and the dimension X2 from point P2 to point Q2, and

[0073] In the above measurement process, the measured dimensions X1 and X2 are the design values ​​α of dimensions X1 and X2. X , the design values ​​of the dimensions from point P1 to point P2 and the dimensions from point Q1 to point Q2 are α Y , the maximum value among the distances between the center points of the two through holes in the second direction is W Y When it was said,

[0074]

[0075] This is a method for selecting a deposition mask, comprising a selection process for selecting the deposition mask that satisfies the above conditions.

[0076] The 14th aspect of the present disclosure is,

[0077] It is a deposition mask extending in the first direction, and

[0078] A first central axis line extending in the first direction and positioned at a central location in a second direction orthogonal to the first direction, and

[0079] Points P1 and Q1, which are provided on one side of the first central axis and are spaced apart from each other according to the first direction, and

[0080] Provided on the other side of the first central axis and having points P2 and Q2 spaced apart from each other according to the first direction,

[0081] Let X1 be the dimension from point P1 to point Q1, X2 be the dimension from point P2 to point Q2, and α be the design values ​​of the dimensions X1 and X2. X When it was said,

[0082]

[0083] It is a deposition mask that satisfies the requirements.

[0084] The 15th aspect of the present disclosure is,

[0085] It is a deposition mask having a plurality of through holes extending in a first direction, and

[0086] A first central axis line extending in the first direction and positioned at a central location in a second direction orthogonal to the first direction, and

[0087] Points P1 and Q1, which are provided on one side of the first central axis and are spaced apart from each other according to the first direction, and

[0088] Provided on the other side of the first central axis and having points P2 and Q2 spaced apart from each other according to the first direction,

[0089] Let X1 be the dimension from point P1 to point Q1, X2 be the dimension from point P2 to point Q2, and α be the design values ​​of the dimensions X1 and X2. X , the design values ​​of the dimensions from point P1 to point P2 and the dimensions from point Q1 to point Q2 are α Y , the maximum value among the distances between the center points of the two through holes in the second direction is W Y When it was said,

[0090]

[0091] It is a deposition mask that satisfies the requirements.

[0092] The 16th aspect of the present disclosure is,

[0093] A process for preparing the deposition mask device by the method for manufacturing the deposition mask device according to the 11th embodiment described above, and

[0094] A process of adhering the deposition mask of the above deposition mask device to a substrate, and

[0095] The deposition method comprises a process of depositing a deposition material onto a substrate through the through hole of the deposition mask. Effects of the invention

[0096] According to the present disclosure, the positional accuracy of the through hole during installation can be improved. Brief explanation of the drawing

[0097] FIG. 1 is a drawing showing a deposition apparatus equipped with a deposition mask apparatus according to one embodiment of the present disclosure. FIG. 2 is a cross-sectional view showing an organic EL display device manufactured using the deposition mask device shown in FIG. 1. FIG. 3 is a plan view showing a deposition mask apparatus according to one embodiment of the present disclosure. Figure 4 is a partial plan view showing the effective area of ​​the deposition mask shown in Figure 3. Figure 5 is a cross-sectional view along the VV line of Figure 4. Figure 6 is a cross-sectional view along the line VI-VI of Figure 4. Figure 7 is a cross-sectional view along line VII-VII of Figure 4. Figure 8 is a cross-sectional view showing an enlarged view of the through hole and the area near it shown in Figure 5. FIG. 9a is a schematic diagram illustrating dimensions X1 and X2 in the deposition mask of FIG. 3. FIG. 9b is a schematic diagram illustrating dimensions X1 and X2 in the deposition mask of FIG. 3 as a modified example of FIG. 9a. FIG. 9c is a schematic diagram illustrating dimensions X1 and X2 in the deposition mask of FIG. 3 as another variation of FIG. 9a. FIG. 10 is a drawing showing a process of rolling a base material to obtain a metal plate having a desired thickness. Figure 11 is a diagram showing the process of annealing a metal plate obtained by rolling. FIG. 12 is a schematic diagram for explaining, in its entirety, a method for manufacturing a deposition mask according to one embodiment of the present disclosure. FIG. 13 is a drawing showing a process of forming a resist film on a metal plate in a manufacturing method according to one embodiment of the present disclosure. FIG. 14 is a drawing showing a process of adhering an exposure mask to a resist film in a manufacturing method according to one embodiment of the present disclosure. FIG. 15 is a drawing showing a process of developing a resist film in a manufacturing method according to one embodiment of the present disclosure. FIG. 16 is a drawing showing a first surface etching process in a manufacturing method according to one embodiment of the present disclosure. FIG. 17 is a drawing showing a process of coating a first concave portion with a resin in a manufacturing method according to one embodiment of the present disclosure. FIG. 18 is a drawing showing a second surface etching process in a manufacturing method according to one embodiment of the present disclosure. FIG. 19 is a drawing showing a second surface etching process continuing from FIG. 18 in a manufacturing method according to one embodiment of the present disclosure. FIG. 20 is a drawing showing a process of removing a resin and a resist pattern from a long metal plate in a manufacturing method according to one embodiment of the present disclosure. FIG. 21 is a perspective view showing an example of a long metal plate obtained by rolling. FIG. 22 is a perspective view illustrating the formation of a deposition mask on a long metal plate in which a curved shape is compressed to become nearly flat. FIG. 23 is a perspective view showing a plurality of deposition masks formed on a long metal plate. FIG. 24 is a plan view showing a deposition mask cut from a long metal plate shown in FIG. 23. FIG. 25 is a drawing showing an example of a system for determining the quality of a deposition mask used in a method for determining the quality of a deposition mask according to one embodiment of the present disclosure. FIG. 26 is a drawing showing an example of a tension applying device in a method for manufacturing a deposition mask device according to one embodiment of the present disclosure. FIG. 27 is a plan view showing an example of the deposition mask configuration shown in FIG. 24. FIG. 28 is a plan view showing another example of the deposition mask state shown in FIG. 24. FIG. 29 illustrates, in one embodiment of the present disclosure, α X =200mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at =65.0mm. FIG. 30 illustrates, in one embodiment of the present disclosure, α X =200mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 43.3 mm. FIG. 31 illustrates, in one embodiment of the present disclosure, α X =200mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 21.7 mm. FIG. 32 illustrates, in one embodiment of the present disclosure, α X =300mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at =65.0mm. FIG. 33 illustrates, in one embodiment of the present disclosure, α X =300mm, αY This is a diagram showing the pass / fail judgment results of the deposition mask at 43.3 mm. FIG. 34 illustrates, in one embodiment of the present disclosure, α X =300mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 21.7 mm. FIG. 35 illustrates, in one embodiment of the present disclosure, α X =400mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at =65.0mm. FIG. 36 illustrates, in one embodiment of the present disclosure, α X =400mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 43.3 mm. FIG. 37 illustrates, in one embodiment of the present disclosure, α X =400mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 21.7 mm. FIG. 38 illustrates, in one embodiment of the present disclosure, α X =600mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at =65.0mm. FIG. 39 illustrates, in one embodiment of the present disclosure, α X =600mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 43.3 mm. FIG. 40 illustrates, in one embodiment of the present disclosure, α X =600mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 21.7 mm. FIG. 41 illustrates, in one embodiment of the present disclosure, α X =800mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at =65.0mm. FIG. 42 illustrates, in one embodiment of the present disclosure, α X=800mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 43.3 mm. FIG. 43 illustrates, in one embodiment of the present disclosure, α X =800mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 21.7 mm. FIG. 44 illustrates, in one embodiment of the present disclosure, α X =900mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at =65.0mm. FIG. 45 illustrates, in one embodiment of the present disclosure, α X =900mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 43.3 mm. FIG. 46 illustrates, in one embodiment of the present disclosure, α X =900mm, α Y This is a diagram showing the pass / fail judgment results of the deposition mask at 21.7 mm. Specific details for implementing the invention

[0098] Unless otherwise specified in this specification and drawings, terms such as “plate,” “sheet,” and “film” are not distinguished from one another based solely on differences in designation. For example, “plate” is a concept that includes a component that can be called a sheet or a film. Furthermore, “surface (sheet surface, film surface)” refers to a surface that coincides with the planar direction of the target plate-shaped component (sheet-shaped component, film-shaped component) when the target plate-shaped component (sheet-shaped component, film-shaped component) is viewed in an overall and broad manner. Additionally, the normal direction used for the plate-shaped component (sheet-shaped component, film-shaped component) refers to the normal direction for the surface (sheet surface, film surface) of said component. Furthermore, terms used in this specification to specify shapes, geometric conditions, and their degrees, such as “parallel” or “orthogonal,” and values ​​of length or angle, are not bound by their strict meanings but are to be interpreted to include a range sufficient to expect similar functions.

[0099] Unless otherwise specifically stated in this specification and drawings, terms such as "parallel" or "orthogonal," and values ​​of length or angle, which specify shapes, geometric conditions, and their degrees, shall not be bound by their strict meanings but shall be interpreted to include a range in which similar functions can be expected.

[0100] In this specification and drawings, when a configuration such as a certain member or area is described as being "above (or below)," "upper (or lower)," or "upper (or lower)" of another configuration such as another member or area, unless otherwise specified, this shall be interpreted to include not only cases where the configuration is in direct contact with the other configuration, but also cases where another configuration is included between the configuration and the other configuration. Furthermore, unless otherwise specified, the expressions "above (or upper side or upper)" or "below (or lower side or lower)" may be used for description, but the vertical directions may be reversed.

[0101] Unless otherwise specified in this specification and drawings, identical or similar reference numerals are used for identical parts or parts having the same function, and descriptions thereof may be omitted. Additionally, for explanatory purposes, the dimensional ratios in the drawings may differ from the actual ratios, or parts of the components may be omitted from the drawings.

[0102] Unless otherwise specifically stated in this specification and drawings, other embodiments or variations may be combined to the extent that no contradiction arises. Furthermore, other embodiments may be combined with each other, or other embodiments and variations may be combined to the extent that no contradiction arises. Furthermore, variations may be combined with each other to the extent that no contradiction arises.

[0103] Unless otherwise specifically stated in this specification and drawings, when multiple processes are disclosed for a method such as a manufacturing method, other processes not disclosed may be performed between the disclosed processes. Furthermore, the order of the disclosed processes is optional to the extent that no inconsistencies occur.

[0104] Unless otherwise specified in this specification and drawings, numerical ranges indicated by the symbol “to” include the numbers placed before and after the symbol “to”. For example, a numerical range defined by the expression “34 to 38 mass%” is the same as a numerical range defined by the expression “34 mass% or more and 38 mass% or less”.

[0105] In one embodiment of the present specification, examples regarding a deposition mask used to pattern an organic material onto a substrate in a desired pattern when manufacturing an organic EL display device, and a method for manufacturing the same, are described. However, the present embodiment may be applied to deposition masks used for various purposes, not limited to such applications.

[0106] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. Furthermore, the embodiments described below are examples of embodiments of the present disclosure, and the present disclosure is not to be interpreted as being limited only to these embodiments. Additionally, in the drawings attached to this specification, the scale and aspect ratios, etc., have been appropriately altered from the actual objects and exaggerated for convenience of illustration and ease of understanding.

[0107] First, a deposition apparatus (90) for performing a deposition process to deposit a deposition material on an object will be described with reference to FIG. 1. As shown in FIG. 1, the deposition apparatus (90) may be equipped with a deposition source (e.g., a crucible (94)), a heater (96), and a deposition mask apparatus (10) inside. Additionally, the deposition apparatus (90) may further be equipped with an exhaust means for creating a vacuum atmosphere inside the deposition apparatus (90). The crucible (94) contains a deposition material (98), such as an organic light-emitting material. The heater (96) heats the crucible (94) to evaporate the deposition material (98) under a vacuum atmosphere. The deposition mask apparatus (10) is arranged to face the crucible (94).

[0108] Hereinafter, a deposition mask device (10) will be described. As shown in FIG. 1, the deposition mask device (10) may be equipped with a deposition mask (20) and a frame (15) that supports the deposition mask (20). The frame (15) supports the deposition mask (20) in a tensioned state in its face direction so that the deposition mask (20) does not bend. As shown in FIG. 1, the deposition mask device (10) is placed in a deposition device (90) so that the deposition mask (20) faces a substrate, such as an organic EL substrate (92), which is the object to which the deposition material (98) is attached. In the following description, among the faces of the deposition mask (20), the face facing the organic EL substrate (92) is referred to as the first face (20a), and the face located on the opposite side of the first face (20a) is referred to as the second face (20b).

[0109] As shown in FIG. 1, the deposition mask device (10) may be equipped with a magnet (93) placed on the side opposite to the deposition mask (20) of the organic EL substrate (92). By providing the magnet (93), the deposition mask (20) can be pulled close to the side of the magnet (93) by magnetic force, thereby allowing the deposition mask (20) to be attached to the organic EL substrate (92).

[0110] FIG. 3 is a plan view showing the deposition mask device (10) as seen from the first surface (20a) of the deposition mask (20). As shown in FIG. 3, the deposition mask device (10) has a plurality of deposition masks (20) having a roughly rectangular shape when viewed from a planar view, and each deposition mask (20) is fixed to a frame (15) at a pair of ends (26a, 26b) in the longitudinal direction D1 of the deposition mask (20).

[0111] The deposition mask (20) may include a metal plate having a plurality of through holes (25) formed therein that penetrate the deposition mask (20). The deposition material (98) that evaporates from the crucible (94) and reaches the deposition mask device (10) is attached to the organic EL substrate (92) through the through holes (25) of the deposition mask (20). By doing so, the deposition material (98) can be formed on the surface of the organic EL substrate (92) in a desired pattern corresponding to the position of the through holes (25) of the deposition mask (20).

[0112] FIG. 2 is a cross-sectional view showing an organic EL display device (100) manufactured using the deposition apparatus (90) of FIG. 1. The organic EL display device (100) may include a pixel comprising an organic EL substrate (92) and a deposition material (98) provided on a pattern.

[0113] In addition, if you want to perform color display using multiple colors, you may prepare a deposition device (90) equipped with a deposition mask (20) corresponding to each color and sequentially introduce an organic EL substrate (92) into each deposition device (90). By doing so, for example, an organic light-emitting material for red, an organic light-emitting material for green, and an organic light-emitting material for blue can be deposited sequentially on the organic EL substrate (92).

[0114] However, the deposition process may be performed inside a deposition apparatus (90) that creates a high-temperature atmosphere. In this case, during the deposition process, the deposition mask (20), frame (15), and organic EL substrate (92) placed inside the deposition apparatus (90) are also heated. At this time, the deposition mask (20), frame (15), and organic EL substrate (92) exhibit behavior of dimensional change based on their respective coefficients of thermal expansion. In this case, it is desirable that the coefficients of thermal expansion of the deposition mask (20) or frame (15) and the organic EL substrate (92) are not significantly different. By doing so, positional misalignment caused by differences in their dimensional changes can be suppressed, and as a result, the dimensional accuracy or positional accuracy of the deposition material attached to the organic EL substrate (92) can be improved.

[0115] Therefore, the coefficient of thermal expansion of the deposition mask (20) and the frame (15) may be equal to the coefficient of thermal expansion of the organic EL substrate (92). For example, when a glass substrate is used as the organic EL substrate (92), an iron alloy containing nickel may be used as the main material of the deposition mask (20) and the frame (15). For example, an iron alloy containing 30 mass% or more and 54 mass% or less of nickel may be used as the material of the metal plate constituting the deposition mask (20). Specific examples of the iron alloy containing nickel include Invar material containing 34 mass% or more and 38 mass% or less of nickel, super Invar material containing cobalt in addition to 30 mass% or more and 34 mass% or less of nickel, and low thermal expansion Fe-Ni-based plating alloy containing 38 mass% or more and 54 mass% or less of nickel.

[0116] In addition, when the temperature of the deposition mask (20), frame (15), and organic EL substrate (92) does not reach a high temperature during the deposition process, the thermal expansion coefficient of the deposition mask (20) and frame (15) does not need to be equal to the thermal expansion coefficient of the organic EL substrate (92). In this case, a material other than the iron alloy described above may be used as the material constituting the deposition mask (20). For example, an iron alloy other than the iron alloy containing nickel described above, such as an iron alloy containing chromium, may be used. As for the iron alloy containing chromium, for example, an iron alloy referred to as so-called stainless steel may be used. In addition, an alloy other than an iron alloy, such as nickel or nickel-cobalt alloy, may be used.

[0117] Next, the deposition mask (20) will be described in detail. As shown in FIG. 3, the deposition mask (20) in this embodiment may have a long, slender shape or a stick-shaped planar shape. The deposition mask (20) may have a pair of ear portions (first ear portion (17a) and second ear portion (17b)) constituting a pair of end portions (first end portion (26a) and second end portion (26b)) in the longitudinal direction D1 of the deposition mask (20), and an intermediate portion (18) located between the pair of ear portions (17a, 17b).

[0118] First, the noble portions (17a, 17b) will be described in detail. The noble portions (17a, 17b) are parts that are fixed to the frame (15) of the deposition mask (20). In this embodiment, they may be integrally formed with the intermediate portion (18). Additionally, the noble portions (17a, 17b) may be formed by a different member from the intermediate portion (18). In this case, the noble portions (17a, 17b) are joined to the intermediate portion (18), for example, by welding.

[0119] Next, the intermediate portion (18) will be described. The intermediate portion (18) may include an effective area (22) in which a through hole (25) extending from the first surface (20a) to the second surface (20b) is formed, and a surrounding area (23) located around the effective area (22) and surrounding the effective area (22). The effective area (22) may be an area facing the display area of ​​the organic EL substrate (92) among the deposition mask (20).

[0120] As illustrated in FIG. 3, the intermediate portion (18) may include a plurality of effective regions (22) arranged at predetermined intervals along the longitudinal direction D1 of the deposition mask (20). One effective region (22) may correspond to a display area of ​​one organic EL display device (100). Thus, multi-sided deposition of the organic EL display device (100) may be possible, as with the deposition mask device (10) shown in FIG. 1.

[0121] As illustrated in FIG. 3, the effective area (22) may have a roughly rectangular outline when viewed from a planar perspective, for example. Also, although not illustrated, each effective area (22) may have an outline of various shapes depending on the shape of the display area of ​​the organic EL substrate (92). For example, each effective area (22) may have a circular outline.

[0122] Hereinafter, the effective area (22) will be described in detail. FIG. 4 is a plan view showing the effective area (22) enlarged from the second surface (20b) of the deposition mask (20). As shown in FIG. 4, in the illustrated example, a plurality of through holes (25) formed in each effective area (22) may be arranged at a predetermined pitch along two mutually orthogonal directions in the effective area (22). The through holes (25) may be arranged in a grid pattern as shown in FIG. 4 or FIG. 9a described later when viewed from a planar perspective. In this case, the rows of through holes (25) arranged along the first direction D1 are called the first row and the second row, and if the first row and the second row are adjacent to each other in the second direction D2, the position of the through holes (25) forming the first row in the first direction D1 and the position of the through holes (25) forming the second row in the first direction D1 are equal to each other. Alternatively, the position of the through holes (25) forming the first row in the first direction D1 may be offset from the position of the through holes (25) forming the second row in the first direction D1. For example, as shown in FIG. 9b described later, the through holes (25) forming the second row may be arranged at a position corresponding to the middle position of the through holes (25) that are adjacent to each other in the first direction D1 among the through holes (25) forming the first row. Even in this case, as shown in FIG. 9b, the pitch of the through holes (25) forming the first row and the pitch of the through holes (25) forming the second row may be equal. The arrangement of the through holes (25) shown in FIG. 9b described later may be described as a zigzag arrangement. In this case, if the through holes (25) are arranged in a grid or zigzag pattern, the arrangement of the through holes (25) may have regularity (or symmetry in some cases).Accordingly, as described below, it becomes possible to determine the quality of the deposition mask (20) by using only four through holes (25) corresponding to points P1, P2, Q1, and Q2 among the numerous through holes (25) as a representative example. In addition, the planar shape of the through holes (25) is arbitrary and may be rectangular or polygonal (e.g., rectangular or rhombus-shaped). In this case, each side may be concave inward or convex outward. In addition, the planar shape of the through holes (25) may be circular, elliptical, etc. FIG. 4 shows an example of a rectangular shape with rounded corners.

[0123] An example of a through hole (25) will be described in more detail with reference mainly to FIGS. 5 to 7. FIGS. 5 to 7 are cross-sectional views along the VV direction to VII-VII direction of the effective area (22) of FIG. 4, respectively.

[0124] As shown in FIGS. 5 to 7, a plurality of through holes (25) penetrate from a first surface (20a), which is one side along the normal direction N of the deposition mask (20), to a second surface (20b), which is the other side along the normal direction N of the deposition mask (20). In the illustrated example, as will be described in detail later, a first concave portion (30) may be formed by etching on the first surface (21a) of the metal plate (21), which is one side along the normal direction N of the deposition mask (20), and a second concave portion (35) may be formed on the second surface (21b) of the metal plate (21), which is the other side along the normal direction N of the deposition mask (20). The first concave portion (30) may be connected to the second concave portion (35), thereby allowing the second concave portion (35) and the first concave portion (30) to communicate with each other. The through hole (25) may be composed of a second concave portion (35) and a first concave portion (30) connected to the second concave portion (35).

[0125] As shown in FIGS. 5 to 7, the opening area of ​​each second concave portion (35) in the cross-section along the plate surface of the deposition mask (20) at each position according to the normal direction N of the deposition mask (20) may gradually become smaller from the second surface (20b) side of the deposition mask (20) towards the first surface (20a) side. Likewise, the opening area of ​​each first concave portion (30) in the cross-section along the plate surface of the deposition mask (20) at each position according to the normal direction N of the deposition mask (20) may gradually become smaller from the first surface (20a) side of the deposition mask (20) towards the second surface (20b) side.

[0126] As shown in FIGS. 5 to 7, the wall surface (31) of the first concave portion (30) and the wall surface (36) of the second concave portion (35) may be connected through a columnar connecting portion (41). The connecting portion (41) may be formed by a ridge of a protrusion where the wall surface (31) of the first concave portion (30), which is inclined with respect to the normal direction N of the deposition mask (20), and the wall surface (36) of the second concave portion (35), which is inclined with respect to the normal direction N of the deposition mask (20), merge. Additionally, the connecting portion (41) may form a through portion (42) such that the opening area of ​​the through hole (25) is minimized when viewed from the plane of the deposition mask (20).

[0127] As shown in FIGS. 5 to 7, on the other side side according to the normal direction N of the deposition mask (20), that is, on the first surface (20a) of the deposition mask (20), two adjacent through holes (25) may be spaced apart from each other along the plate surface of the deposition mask (20). That is, as in the manufacturing method described later, when the first concave portion (30) is produced by etching the metal plate (21) from the first surface (21a) side of the metal plate (21) corresponding to the first surface (20a) of the deposition mask (20), the first surface (21a) of the metal plate (21) may remain between the two adjacent first concave portions (30).

[0128] Likewise, as shown in FIGS. 5 and 7, on one side along the normal direction N of the deposition mask (20), that is, on the side of the second surface (20b) of the deposition mask (20), two adjacent second concave portions (35) may be spaced apart from each other along the plate surface of the deposition mask (20). That is, the second surface (21b) of the metal plate (21) may remain between the two adjacent second concave portions (35). In the following description, the portion that remains unetched among the effective area (22) of the second surface (21b) of the metal plate (21) is also referred to as the saw portion (43). By manufacturing the deposition mask (20) such that this saw portion (43) remains, the deposition mask (20) can be made to have sufficient strength. By doing so, it is possible to prevent the deposition mask (20) from being damaged, for example, during handling. In addition, if the width β of the top portion (43) is too large, shadows may occur during the deposition process, and the utilization efficiency of the deposition material (98) may be reduced as a result. Therefore, it is desirable to manufacture the deposition mask (20) so that the width β of the top portion (43) does not become excessively large. For example, it is desirable that the width β of the top portion (43) be 2 μm or less. Also, the width β of the top portion (43) generally changes depending on the direction in which the deposition mask (20) is cut. For example, the width β of the top portion (43) shown in FIG. 5 and FIG. 7 may be different. In this case, the deposition mask (20) may be configured so that the width β of the top portion (43) is 2 μm or less regardless of the direction in which the deposition mask (20) is cut.

[0129] Additionally, as shown in FIG. 6, depending on the location, etching may be performed so that two adjacent second concave portions (35) are connected. That is, there may be a location where the second surface (21b) of the metal plate (21) does not remain between two adjacent second concave portions (35). Also, although not shown, etching may be performed so that two adjacent second concave portions (35) are connected across the entire second surface (21b).

[0130] As shown in FIG. 1, when the deposition mask device (10) is received in the deposition device (90), as indicated by the dotted line in FIG. 5, the first surface (20a) of the deposition mask (20) faces the organic EL substrate (92), and the second surface (20b) of the deposition mask (20) is positioned on the side of the crucible (94) that receives the deposition material (98). Accordingly, the deposition material (98) is attached to the organic EL substrate (92) through the second concave portion (35), the opening area of ​​which gradually decreases. As indicated by the arrow pointing from the second surface (20b) toward the first surface (20a) in FIG. 5, the deposition material (98) not only moves from the crucible (94) toward the organic EL substrate (92) along the normal direction N of the organic EL substrate (92), but also moves in a direction that is greatly inclined with respect to the normal direction N of the organic EL substrate (92).

[0131] At this time, if the thickness of the deposition mask (20) is large, most of the deposition material (98) moving obliquely can reach and attach to the wall (36) of the second concave portion (35) before reaching the organic EL substrate (92) through the through hole (25). Therefore, in order to increase the utilization efficiency of the deposition material (98), it is considered desirable to reduce the thickness t of the deposition mask (20) and thereby reduce the height of the wall (36) of the second concave portion (35) or the wall (31) of the first concave portion (30). That is, as a metal plate (21) for constituting the deposition mask (20), it is considered desirable to use a metal plate (21) with a thickness t as small as possible within the range where the strength of the deposition mask (20) can be secured. By doing so, the height of the wall surface of the through hole (25) can be reduced, and the proportion of the deposition material (98) attached to the wall surface of the through hole (25) can be lowered. Because of this, the thickness of the deposition material (98) attached to the organic EL substrate (92) can be equalized, so when a deposition mask (20) is used to form pixels of an organic EL display device, the dimensional accuracy or positional accuracy of the pixels can be improved, thereby improving the luminous efficiency of the organic EL display device.

[0132] In this embodiment, the lower limit of the thickness t of the deposition mask (20) may be, for example, 5 μm or more, 8 μm or more, 10 μm or more, 12 μm or more, 13 μm or more, or 15 μm or more. By doing so, the strength of the deposition mask (20) can be secured, thereby suppressing damage or deformation of the deposition mask (20). In addition, the upper limit of the thickness t of the deposition mask (20) may be, for example, 20 μm or less, 25 μm or less, 35 μm or less, 40 μm or less, 50 μm or less, or 100 μm or less. By doing so, as described above, the ratio of the deposition material (98) adhering to the wall of the through hole (25) can be reduced. The range of thickness t of the deposition mask (20) may be determined by a combination of any one of the aforementioned multiple lower limit candidate values ​​and any one of the aforementioned multiple upper limit candidate values, for example, it may be 5㎛ or more and 100㎛ or less, 8㎛ or more and 50㎛ or less, 10㎛ or more and 40㎛ or less, 12㎛ or more and 35㎛ or less, 13㎛ or more and 30㎛ or less, or 15㎛ or more and 20㎛ or less. Additionally, the range of thickness t of the deposition mask (20) may be determined by a combination of any two of the aforementioned multiple lower limit candidate values, for example, it may be 5㎛ or more and 15㎛ or less, 5㎛ or more and 13㎛ or less, 8㎛ or more and 15㎛ or less, or 8㎛ or more and 13㎛ or less. Additionally, the range of thickness t of the deposition mask (20) may be determined by any combination of any two of the above-described upper limit candidate values, for example, 20㎛ or more and 100㎛ or less, 20㎛ or more and 50㎛ or less, 25㎛ or more and 100㎛ or less, or 25㎛ or more and 50㎛ or less. Also, thickness t is the thickness of the surrounding region (23), that is, the thickness of the portion of the deposition mask (20) where the first concave portion (30) and the second concave portion (35) are not formed.Therefore, the thickness t can be said to be the thickness of the metal plate (21).

[0133] In FIG. 5, the minimum angle formed with respect to the normal direction N of the deposition mask (20) by a straight line L1 passing through a connecting portion (41) that has the minimum opening area of ​​the through hole (25) and another arbitrary location on the wall surface (36) of the second concave portion (35) is indicated by the symbol θ1. In order to make the obliquely moving deposition material (98) reach the organic EL substrate (92) as much as possible without reaching the wall surface (36), it is advantageous to increase the angle θ1. In order to increase the angle θ1, in addition to reducing the thickness t of the deposition mask (20), it is also effective to reduce the width β of the top portion (43) described above.

[0134] In FIG. 7, the symbol α represents the width of the portion (hereinafter also referred to as the rib portion) that remains unetched in the effective area (22) of the first surface (21a) of the metal plate (21). The width α of the rib portion and the dimension r2 of the penetration portion (42) are appropriately determined according to the dimensions of the organic EL display device and the number of display pixels. Table 1 shows an example of the values ​​of the width α of the rib portion and the dimension r2 of the penetration portion (42) obtained according to the number of display pixels in a 5-inch organic EL display device.

[0135]

[0136] Although not limited to, the deposition mask (20) according to the present embodiment is considered to be particularly effective when manufacturing an organic EL display device with a pixel density of 450 ppi or higher. Hereinafter, with reference to FIG. 8, an example of the dimensions of the deposition mask (20) required to manufacture such a high pixel density organic EL display device will be described. FIG. 8 is a cross-sectional view showing an enlarged view of the through hole (25) and the area near it of the deposition mask (20) shown in FIG. 5.

[0137] In FIG. 8, as a parameter related to the shape of the through hole (25), the distance in the direction according to the normal direction N of the deposition mask (20) from the first surface (20a) of the deposition mask (20) to the connection part (41), i.e., the height of the wall surface (31) of the first concave part (30), is indicated by the symbol r1. In addition, the dimension of the first concave part (30) at the part where the first concave part (30) connects to the second concave part (35), i.e., the dimension of the through part (42), is indicated by the symbol r2. Also in FIG. 8, the angle formed by the straight line L2 connecting the connection part (41) and the leading edge of the first concave part (30) on the first surface (21a) of the metal plate (21) with respect to the normal direction N of the metal plate (21) is indicated by the symbol θ2.

[0138] When manufacturing an organic EL display device with a pixel density of 450 ppi or more, the dimension r2 of the penetration portion (42) is preferably set to 10 or more and 60 μm or less. By doing so, a deposition mask (20) capable of manufacturing an organic EL display device with a high pixel density can be provided. Preferably, the height r1 of the wall surface (31) of the first concave portion (30) is set to 6 μm or less.

[0139] Next, the aforementioned angle θ2 shown in FIG. 8 will be explained. Angle θ2 corresponds to the maximum value of the angle of inclination of the deposition material (98) that can reach the organic EL substrate (92) among the deposition material (98) that flies through the penetration part (42) near the connection part (41) with an inclination with respect to the normal direction N of the metal plate (21). This is because it is thought that the deposition material (98) that flies through the connection part (41) at an angle of inclination greater than angle θ2 is attached to the wall surface (31) of the first concave part (30) before reaching the organic EL substrate (92). Therefore, by making the angle θ2 small, the deposition material (98) passing through the penetration part (42) at a large angle of inclination can be suppressed from adhering to the organic EL substrate (92), and thereby, the deposition material (98) can be suppressed from adhering to the outer part of the organic EL substrate (92) that overlaps with the penetration part (42). In other words, making the angle θ2 small is thought to induce suppression of fluctuations in the area or thickness of the deposition material (98) attached to the organic EL substrate (92). In this regard, for example, the penetration hole (25) may be formed such that the angle θ2 is 45 degrees or less. In addition, FIG. 8 shows an example in which the dimension of the first concave portion (30) in the first surface (21a), that is, the opening dimension of the through hole (25) in the first surface (21a), is larger than the dimension r2 of the first concave portion (30) in the connecting portion (41). That is, an example is shown in which the value of the angle θ2 is a positive value. However, although not shown, the dimension r2 of the first concave portion (30) in the connecting portion (41) may be larger than the dimension of the first concave portion (30) in the first surface (21a). That is, the value of the angle θ2 may be a negative value.

[0140] However, as illustrated in FIG. 3, the deposition mask (20) may be formed to extend in the longitudinal direction D1 (first direction) from the first corner portion (17a) constituting the first end portion (26a) to the second corner portion (17b) constituting the second end portion (26b), as described above. Here, the longitudinal direction D1 is a direction parallel to the conveying direction when rolling the base material (55) (see FIG. 10), and may be the longitudinal direction of the deposition mask (20) in which a plurality of effective regions (22) are arranged. In addition, the term "conveying" is used to mean the conveying of the base material (55) by roll-to-roll as described below. Furthermore, the width direction D2 (second direction) described below may be a direction perpendicular to the longitudinal direction D1 in the plane direction of the metal plate (21) or the long metal plate (64). Additionally, the deposition mask (20) may have a first central axis AL1 that extends in the longitudinal direction D1 and is positioned at the center of the width direction D2, and a second central axis AL2 that extends in the width direction D2 and is positioned at the center of the longitudinal direction D1. When the number of through holes (25) in the width direction D2 is odd, the first central axis AL1 passes through the center point of the central through hole (25) in the width direction D2. On the other hand, when the number of through holes (25) in the width direction D2 is even, the first central axis AL1 passes through the midpoint between two through holes (25) that are adjacent to each other near the center of the width direction D2.

[0141] As shown in FIG. 9a, the deposition mask (20) according to the present embodiment has a dimension from point P1 to point Q1 described later, denoted as X1, a dimension from point P2 to point Q2, denoted as X2, and a design value of dimension X1 and dimension X2 α X When it was said,

[0142]

[0143] It may satisfy the following. The left side of Equation (1) represents the absolute value of the average of the difference between the design value and dimension X1 and the difference between the design value and dimension X2.

[0144] In addition, the deposition mask (20) according to the present embodiment is a design value of the dimensions from point P1 to point P2, and the design value of the dimensions from point Q1 to point Q2 is α Y , the maximum value among the distances between the center points of the two through holes (25) in the width direction D2 is W Y When it was said,

[0145]

[0146] It may satisfy . The left side of Equation (2) represents the absolute value of the difference between dimension X1 and dimension X2. W Y represents the distance (design value) between the center point of the through hole (25) positioned on the first side edge (27a) and the center point of the through hole (25) positioned on the second side edge (27b). As in Equation (2), W Y By using [this], the determination of the quality of the deposition mask (20) using [this] can be avoided depending on the width direction dimension of the deposition mask (20) (or effective area (22)).

[0147] Here, points P1 and Q1 may be provided on one side (left side in FIG. 9a) of the first central axis AL1 of the deposition mask (20) and may be spaced apart from each other along the longitudinal direction D1. Points P2 and Q2 may be provided on the other side (right side in FIG. 9a) of the first central axis AL1 of the deposition mask (20) and may be spaced apart from each other along the longitudinal direction D1. Points P1 and P2 may be arranged symmetrically with respect to the first central axis AL1 during deposition. For example, points P1 and P2 are intended to be arranged symmetrically with respect to the first central axis AL1 during deposition, and may be points arranged symmetrically with respect to the first central axis AL1 during design. Likewise, points Q1 and Q2 may be arranged symmetrically with respect to the first central axis AL1 during deposition.

[0148] For points P1 and Q1, at the time of design (or installation, deposition), the dimension X1 from point P1 to point Q1 is the design value α X It may be set as two points that become. That is, during design, the desired design value α X Points P1 and Q1 may be set at any two points spaced apart by a distance equivalent to that. Points P1 and Q1 are through holes (25) provided between the first ear portion (17a) and the second ear portion (17b), as shown in FIG. 9a, and a desired design value α at the time of design X The center points of the two through holes (25) that are spaced apart by an equal distance may each be positioned. In this way, the linear distance between point P1 and point Q1 when the deposition mask (20) in which point P1 and point Q1 are set is placed on the stage (81) described later may be dimension X1.

[0149] For points P2 and Q2, during design, the dimension X2 from point P2 to point Q2 is the design value α XIt may be set as two points that become. That is, just like points P1 and Q1, the desired design value α at the time of design X Point P2 and Point Q2 may be set at any two points spaced apart by an equal distance. In this way, the linear distance between Point P2 and Point Q2 when the deposition mask (20) in which Point P2 and Point Q2 are set is placed on the stage (81) described later may be X2.

[0150] The deposition mask (20) placed on the stage (81), etc., may be curved in a C shape as described below (see FIG. 24). However, dimensions X1 and X2 may be straight distances measured from the deposition mask (20) that is curved in a C shape.

[0151] Points P1 and P2 may be positioned on one side (i.e., the first corner (17a) side) with respect to the second central axis line AL2 of the deposition mask (20). Additionally, points Q1 and Q2 may be positioned on the other side (i.e., the second corner (17b) side) with respect to the second central axis line AL2 of the deposition mask (20). However, this is not limited to this, and points P1 and P2 and points Q1 and Q2 may be positioned on the same side with respect to the second central axis line AL2. Furthermore, points P1 and P2 may be positioned on the second central axis line AL2, or points Q1 and Q2 may be positioned on the second central axis line AL2.

[0152] In addition, for points P1 and P2, the dimension from point P1 to point P2 is the design value α during design (or installation, deposition). Y It may be set as two points that become. That is, the desired design value α during design Y Points P1 and P2 may be set at any two points separated by a distance equivalent to . Points P1 and P2 are, as shown in FIG. 9a, at the time of design, the desired design value α YEach of the two through holes (25) spaced apart by an equal distance may be positioned at their respective center points.

[0153] For points Q1 and Q2, the dimension from point Q1 to point Q2 during design is the design value α Y It may be set as two points that become. That is, the desired design value α during design Y Points Q1 and Q2 may be set at any two points separated by a distance equivalent to . Points Q1 and Q2 are the desired design value α at the time of design, as shown in FIG. 9a. Y Each of the two through holes (25) spaced apart by an equal distance may be positioned at their respective center points.

[0154] Additionally, FIG. 9a shows an example in which points P1 and P2 are set in the through hole (25) on the second ear (17b) side (lower side of FIG. 9a) rather than the through hole (25) positioned on the first ear (17a) side (upper side of FIG. 9a) among the multiple through holes (25) in the effective area (22), but is not limited to this. Likewise, Q1 and Q2 show an example in which points Q1 and Q2 are set in the through hole (25) on the first ear (17a) side (upper side of FIG. 9a) rather than the through hole (25) positioned on the second ear (17b) side (lower side of FIG. 9a) among the multiple through holes (25) in the effective area (22), but is not limited to this. Additionally, an example is shown in which points P1 and Q1 are set in the through hole (25) on the second side edge (27b) side (right side of FIG. 9a) rather than the through hole (25) positioned on the first side edge (27a) side (left side of FIG. 9a) among the multiple through holes (25) in the effective area (22), but this is not limited thereto. Likewise, an example is shown in which points P2 and Q2 are set in the through hole (25) on the first side edge (27a) side (left side of FIG. 9a) rather than the through hole (25) positioned on the second side edge (27b) side (right side of FIG. 9a) among the multiple through holes (25) in the effective area (22), but this is not limited thereto. That is, as described above, points P1, Q1, P2, and Q2 are the design value α at the time of design. X and α Y If there are four points, they can be set at the center point of any through hole (25).

[0155] However, points P1 and P2 may be set from the through holes (25), excluding the through hole (25) positioned on the side of the first ear (17a). The through hole (25) on the side of the first ear (17a) is positioned on the outermost side (on the side of the first ear (17a)) among the effective areas (22) positioned on the side of the first ear (17a), and is adjacent to the surrounding area (23). From this, since there are cases where the other through hole (25) in the effective area (22) has higher positional accuracy than the through hole (25) in question, the through hole (25) positioned on the second ear (17b) side rather than the through hole (25) on the first ear (17a) side (for example, the through hole (25) where P1 and P2 points are set in FIG. 9a, or the through hole (25) on the lower side than the through hole (25) in question) may be set at P1 and P2 points.

[0156] Additionally, points Q1 and Q2 may be set from the through holes (25), excluding the through hole (25) positioned on the side of the second ear (17b). The through hole (25) on the side of the second ear (17b) is positioned on the outermost side (on the side of the second ear (17b)) among the effective areas (22) positioned on the side of the second ear (17b), and is adjacent to the surrounding area (23). From this, since there is a case where the other through hole (25) in the effective area (22) has higher positional accuracy than the through hole (25) in question, the through hole (25) positioned on the first ear (17a) side rather than the through hole (25) on the second ear (17b) side (for example, the through hole (25) where Q1 and Q2 points are set in FIG. 9a or the through hole (25) on the upper side above the through hole (25) in question) may be set at Q1 and Q2 points.

[0157] Additionally, points P1 and Q1 may be set from the through holes (25), excluding the through hole (25) located on the side of the first side edge (27a). The through hole (25) on the side of the first side edge (27a) is located on the outermost side (on the side of the first side edge (27a)) of the effective area (22) and is adjacent to the surrounding area (23). Since there is a case where the positional accuracy is higher on the other through hole (25) of the effective area (22) than on the through hole (25), the through hole (25) located on the side of the second side edge (27b) rather than on the side of the first side edge (27a) (for example, the through hole (25) on the right side of the through hole (25) where points P1 and Q1 are set in FIG. 9a)) may be set at points P1 and Q1.

[0158] Additionally, points P2 and Q2 may be set from the through holes (25), excluding the through hole (25) located on the side of the second side edge (27b). The through hole (25) on the side of the second side edge (27b) is located on the outermost side (side of the second side edge (27b)) of the effective area (22) and is adjacent to the surrounding area (23). Since there is a case where the positional accuracy is higher on the other through hole (25) of the effective area (22) than on the through hole (25), the through hole (25) located on the side of the second side edge (27b) rather than on the side of the second side edge (27b) (for example, the through hole (25) on the side of P2 and Q2 in FIG. 9a, or the through hole (25) to the left of the through hole (25)) may be set at points P2 and Q2.

[0159] The design value α shown in Equations (1) and (2). Xmay be a design value of dimension X1 or a design value of dimension X2. This is because, during design, points P1 and Q1 and points P2 and Q2 are arranged symmetrically with respect to the first central axis line AL1 of the deposition mask (20), so dimensions X1 and X2 can be identical. In addition, the design value α shown in Equation (2) Y The design value may be the design value of the dimension from point P1 to point P2, or the design value of the dimension from point Q1 to point Q2. In the design, since point P1 and point Q1 are arranged along the longitudinal direction D1 and point P2 and point Q2 are arranged along the longitudinal direction D1, the design value of the dimension from point P1 to point P2 and the design value of the dimension from point Q1 to point Q2 can be the same. Here, the design value is a numerical value set with the intention that the through hole (25) will be placed at a desired position (deposition target position) when installed on the frame (15), and may be equivalent to the numerical value at installation.

[0160] In this embodiment, the design value α X The lower limit of the range may, for example, be 200mm or more, 300mm or more, or 400mm or more. Also, the design value α X The upper limit of the range may, for example, be 600mm or less, 800mm or less, or 900mm or less. Design value α X The range may be determined by a combination of any one of the aforementioned multiple candidate values ​​for the lower limit and any one of the aforementioned multiple candidate values ​​for the upper limit; for example, it may be 200mm or more and 900mm or less, 300mm or more and 800mm or less, or 400mm or more and 600mm or less. In addition, the design value α XThe range may be determined by any two combinations of the aforementioned multiple candidate lower limit values, for example, it may be 200mm or more and 400mm or less, 200mm or more and 300mm or less, or 300mm or more and 400mm or less. In addition, the design value α X The range may be determined by any two combinations of the aforementioned multiple upper limit candidate values, for example, 600mm or more and 900mm or less, 600mm or more and 800mm or less, or 800mm or more and 900mm or less.

[0161] In this embodiment, the design value α Y It may be 21.7mm or more and 65.0mm or less, 21.7mm or more and 43.3mm or less, or 43.3mm or more and 65.0mm or less.

[0162] In this embodiment, the design value α X g is 200mm and the design value α Y If α is 65.0 mm, dimension X1 may be between 169.0 mm and 232.0 mm. Design value α X g is 200mm and the design value α Y If α is 43.3 mm, dimension X1 may be between 172.8 mm and 225.8 mm. Design value α X g is 200mm and the design value α Y In the case where is 21.7mm, dimension X1 may be 176.0mm or more and 221.2mm or less.

[0163] In this embodiment, the design value α X g is 300mm and the design value α Y If α is 65.0 mm, dimension X1 may be between 253.5 mm and 348.2 mm. Design value α X g is 300mm and the design value α Y If α is 43.3 mm, dimension X1 may be between 258.7 mm and 339.3 mm. Design value α Xg is 300mm and the design value α Y In the case where is 21.7mm, dimension X1 may be 263.9mm or more and 331.7mm or less.

[0164] In this embodiment, the design value α X g is 400mm and the design value α Y If α is 65.0 mm, dimension X1 may be between 338.3 mm and 464.2 mm. Design value α X g is 400mm and the design value α Y If α is 43.3 mm, dimension X1 may be between 344.8 mm and 451.9 mm. Design value α X g is 400mm and the design value α Y In the case where is 21.7mm, dimension X1 may be 351.7mm or more and 442.3mm or less.

[0165] In this embodiment, the design value α X g is 600mm and the design value α Y If α is 65.0 mm, dimension X1 may be between 507.4 mm and 696.3 mm. Design value α X g is 600mm and the design value α Y If α is 43.3 mm, dimension X1 may be between 517.5 mm and 678.1 mm. Design value α X g is 600mm and the design value α Y In the case where is 21.7mm, dimension X1 may be 527.7mm or more and 663.4mm or less.

[0166] In this embodiment, the design value α X g is 800mm and the design value α Y If α is 65.0 mm, dimension X1 may be between 676.2 mm and 927.8 mm. Design value α X g is 800mm and the design value α Y If α is 43.3 mm, dimension X1 may be between 689.9 mm and 904.2 mm. Design value α Xg is 800mm and the design value α Y In the case where α is 21.7mm, dimension X1 may be 703.5mm or more and 884.8mm or less.

[0167] In this embodiment, the design value α X g is 900mm and the design value α Y If α is 65.0 mm, dimension X1 may be between 761.9 mm and 1044.9 mm. Design value α X g is 900mm and the design value α Y If α is 43.3 mm, dimension X1 may be between 776.8 mm and 1017.3 mm. Design value α X g is 900mm and the design value α Y In the case where α is 21.7mm, dimension X1 may be 791.8mm or more and 995.6mm or less.

[0168] In this embodiment, the design value α X α is 200mm, and the design value is α Y If α is 65.0 mm, dimension X2 may be between 176.5 mm and 217.3 mm. Design value α X g is 200mm and the design value α Y If α is 43.3 mm, dimension X1 may be between 179.9 mm and 216.7 mm. Design value α X g is 200mm and the design value α Y In the case where is 21.7mm, dimension X1 may be 182.7mm or more and 216.4mm or less.

[0169] In this embodiment, the design value α X g is 300mm and the design value α Y If α is 65.0 mm, dimension X2 may be between 265.0 mm and 326.2 mm. Design value α X g is 300mm and the design value α Y If α is 43.3 mm, dimension X2 may be between 269.9 mm and 325.0 mm. Design value α Xg is 300mm and the design value α Y In the case where the diameter is 21.7 mm, the dimension X2 may be 274.2 mm or more and 324.5 mm or less.

[0170] In this embodiment, the design value α X g is 400mm and the design value α Y If α is 65.0 mm, dimension X2 may be between 352.9 mm and 435.0 mm. Design value α X g is 400mm and the design value α Y If α is 43.3 mm, dimension X2 may be between 359.8 mm and 434.0 mm. Design value α X g is 400mm and the design value α Y In the case where is 21.7mm, the dimension X2 may be 365.5mm or more and 432.8mm or less.

[0171] In this embodiment, the design value α X g is 600mm and the design value α Y If α is 65.0 mm, dimension X2 may be between 529.8 mm and 652.3 mm. Design value α X g is 600mm and the design value α Y If α is 43.3mm, dimension X2 may be between 539.8mm and 650.4mm. Design value α X g is 600mm and the design value α Y In the case where the diameter is 21.7 mm, the dimension X2 may be 548.1 mm or more and 648.9 mm or less.

[0172] In this embodiment, the design value α X g is 800mm and the design value α Y If α is 65.0 mm, dimension X2 may be between 706.8 mm and 869.8 mm. Design value α X g is 800mm and the design value α Y If α is 43.3 mm, dimension X2 may be between 720.0 mm and 867.7 mm. Design value α Xg is 800mm and the design value α Y In the case where the diameter is 21.7 mm, the dimension X2 may be 730.8 mm or more and 865.2 mm or less.

[0173] In this embodiment, the design value α X g is 900mm and the design value α Y If α is 65.0 mm, dimension X2 may be between 794.8 mm and 977.9 mm. Design value α X g is 900mm and the design value α Y If α is 43.3mm, dimension X2 may be between 809.4mm and 975.8mm. Design value α X g is 900mm and the design value α Y In the case where the diameter is 21.7 mm, the dimension X2 may be 822.3 mm or more and 973.9 mm or less.

[0174] In this embodiment, W is the distance (design value) between the center point of the through hole (25) positioned on the first side edge (27a) and the center point of the through hole (25) positioned on the second side edge (27b). Y ... may be 20mm or more and 350mm or less, 20mm or more and 65.0mm or less, or 65.0mm or more and 350mm or less. Also, W Y It can be 65.0mm.

[0175] The through holes (25) are not limited to being arranged in a grid pattern as shown in FIG. 9a. For example, as shown in FIG. 9b, the through holes (25) may be arranged in a zigzag pattern. In this case, points P1, P2, Q1, and Q2 may be set as shown in FIG. 9b.

[0176] Additionally, if points P1 and Q1 are any two points arranged along the longitudinal direction D1 of the deposition mask (20), they do not need to be positioned at the center point of the through hole (25) through which the deposition material (98) passes during deposition. For example, they may be any concave area formed on the first surface (20a) or the second surface (20b) of the deposition mask (20), or other through holes (dummy holes) not intended for the passage of the deposition material (98), or even the external dimensions of the deposition mask (20). The dummy holes may be arranged on the outer side (first ear portion (17a) side, second ear portion (17b) side, first side edge (27a) side, or second side edge (27b) side) in each effective area (22). For example, not only the through hole (25) positioned at the outermost edge of the effective area (22), but also through holes (25) located one or more times inside from the through hole (25) may be configured as dummy holes. During deposition, the deposition material (98) passes through these dummy holes (25), but the deposition material (98) that passes through and is attached to the organic EL substrate (92) is not used as a pixel.

[0177] For example, as shown in FIG. 9c, points P1, Q1, P2, and Q2 may be positioned at the center point of the total pitch mark (28). The total pitch mark (28) is a mark placed near the corner of each effective area (22) and on the outside of the effective area (22) (i.e., the surrounding area (23)). The total pitch mark (28) may be formed in a concave shape by half-etching at a desired location on the first surface (20a) or the second surface (20b) during the first surface etching process or the second surface etching process described later. Alternatively, a through hole extending from the first surface (20a) to the second surface (20b) may be formed and used as the total pitch mark (28). In addition, FIG. 9c shows an example where the planar shape of the total pitch mark (28) is circular, but it is not limited to this and may be any shape, such as a rectangular shape.

[0178] Next, a method for manufacturing a deposition mask (20) is described.

[0179] First, an example of a method for manufacturing a metal plate used to manufacture a deposition mask is described.

[0180] Initially, as illustrated in FIG. 10, a base material (55) composed of an iron alloy containing nickel is prepared as a rolling process, and this base material (55) may be conveyed in the direction indicated by arrow D1 toward a rolling device (56) comprising a pair of rolling rolls (56a, 56b). The base material (55) that reaches between the pair of rolling rolls (56a, 56b) is rolled by the pair of rolling rolls (56a, 56b), and as a result, the base material (55) is extended along the conveying direction while its thickness is reduced. By this, a plate material (64X) with a thickness t0 can be obtained. As illustrated in FIG. 10, a winding body (62) may be formed by winding the plate material (64X) onto a core (61). The specific value of the thickness t0 is preferably 5 μm or more and 85 μm or less, as described above.

[0181] Additionally, FIG. 10 is merely a diagram showing a schematic of the rolling process, and the specific configuration or procedure for carrying out the rolling process is not particularly limited. For example, the rolling process may include a hot rolling process in which the base material is processed at a temperature above the temperature that changes the crystal arrangement of the Invar material constituting the base material (55), or a cold rolling process in which the base material is processed at a temperature below the temperature that changes the crystal arrangement of the Invar material. Furthermore, the direction in which the base material (55) or plate material (64X) is passed between a pair of rolling rolls (56a, 56b) is not limited to a single direction. For example, in FIG. 10 and FIG. 11, the base material (55) or plate material (64X) may be slowly rolled by repeatedly passing it between a pair of rolling rolls (56a, 56b) in the direction from left to right and from right to left.

[0182] Afterward, a slitting process may be performed to cut both ends in the width direction of the plate (64X) obtained by the rolling process over a predetermined range so that the width of the plate (64X) becomes within a predetermined range. This slitting process is performed to remove cracks that may occur at both ends of the plate (64X) due to rolling. By performing this slitting process, the phenomenon of the plate (64X) breaking, so-called plate cutting, can be suppressed from occurring starting from the cracks.

[0183] After that, in order to remove residual stress (internal stress) accumulated in the plate (64X) by rolling, an annealing process may be performed by using an annealing device (57) as shown in FIG. 11 to anneale the plate (64X), thereby obtaining a long metal plate (64). As shown in FIG. 11, the annealing process may be performed while tensioning the plate (64X) or the long metal plate (64) in the conveying direction (length direction). That is, the annealing process may be performed as continuous annealing while conveying, rather than as so-called batch annealing.

[0184] Preferably, the annealing process described above is carried out in a non-reducing atmosphere or an inert gas atmosphere. Here, a non-reducing atmosphere is an atmosphere that does not contain reducing gases such as hydrogen. "Not containing reducing gases" means that the concentration of reducing gases such as hydrogen is 4% or less. In addition, an inert gas atmosphere is an atmosphere in which inert gases such as argon gas, helium gas, and nitrogen gas make up 90% or more. By carrying out the annealing process in a non-reducing atmosphere or an inert gas atmosphere, the formation of the nickel hydroxide described above on the first surface (64a) or the second surface (64b) of the long metal plate (64) can be suppressed.

[0185] By performing an annealing process, a long metal plate (64) with a thickness t0 can be obtained in which residual deformation is removed to some extent. Additionally, the thickness t0 may be equal to the thickness t of the deposition mask (20).

[0186] In addition, a long metal plate (64) with a thickness t0 may be produced by repeating the aforementioned rolling process, slit process, and annealing process multiple times. Also, in FIG. 11, an example is shown in which the annealing process is performed while the long metal plate (64) is stretched in the longitudinal direction, but this is not limited to this, and the annealing process may be performed while the long metal plate (64) is wound on the core (61). That is, batch-type annealing may be performed. Also, when the annealing process is performed while the long metal plate (64) is wound on the core (61), there may be a tendency for the long metal plate (64) to bend according to the winding diameter of the winding body (62). Therefore, depending on the winding diameter of the winding body (62) or the material constituting the base material (55), it is advantageous to perform the annealing process while stretching the long metal plate (64) in the longitudinal direction.

[0187] After that, a cutting process may be performed in which both ends in the width direction of the long metal plate (64) are cut over a predetermined range, thereby adjusting the width of the long metal plate (64) to a desired width. In this way, a long metal plate (64) having a desired thickness and width can be obtained.

[0188] Next, an example of a method for manufacturing a deposition mask (20) using a long metal plate (64) will be described with reference mainly to FIGS. 12 to 20. In the method for manufacturing a deposition mask (20) described below, as shown in FIG. 12, a long metal plate (64) is supplied, a through hole (25) is formed in the long metal plate (64), and a deposition mask (20) including a sheet metal plate (21) is obtained by cutting the long metal plate (64).

[0189] More specifically, the method for manufacturing the deposition mask (20) may include a process of supplying a long metal plate (64) that extends in a strip shape, a process of performing etching on the long metal plate (64) using photolithography technology to form a first concave portion (30) on the long metal plate (64) from the first surface (64a) side, and a process of performing etching on the long metal plate (64) using photolithography technology to form a second concave portion (35) on the long metal plate (64) from the second surface (64b) side. Additionally, a through hole (25) may be formed in the long metal plate (64) by the first concave portion (30) and the second concave portion (35) formed in the long metal plate (64) communicating with each other. In the example shown in FIGS. 13 to 20, the process of forming the first concave portion (30) is performed before the process of forming the second concave portion (35), and further, between the process of forming the first concave portion (30) and the process of forming the second concave portion (35), a process of sealing the manufactured first concave portion (30) is further provided. The details of each process will be explained below.

[0190] FIG. 12 shows a manufacturing apparatus (60) for manufacturing a deposition mask (20). As shown in FIG. 12, a winding body (metal plate roll) (62) is prepared by winding a long metal plate (64) onto a core (61). Then, as the core (61) rotates and the winding body (62) is unwound, a long metal plate (64) extending in a strip shape is supplied as shown in FIG. 12. Additionally, a through hole (25) is formed in the long metal plate (64) to form a single-sheet metal plate (21) and further a deposition mask (20).

[0191] The supplied long metal plate (64) may be conveyed to an etching device (etching means) (70) by a conveying roller (72). Each process shown in FIGS. 13 to 20 may be performed by the etching device (70). In addition, in this embodiment, an example in which a plurality of deposition masks (20) are allocated in the width direction of the long metal plate (64) is described. That is, a plurality of deposition masks (20) are produced from an area occupying a predetermined position of the long metal plate (64) in the length direction. In this case, preferably, a plurality of deposition masks (20) are allocated to the long metal plate (64) such that the length direction of the deposition masks (20) coincides with the rolling direction of the long metal plate (64).

[0192] First, as shown in FIG. 13, a resist film (65c, 65d) containing a negative-type photosensitive resist material may be formed on the first surface (64a) and the second surface (64b) of the long metal plate (64). As a method for forming the resist film (65c, 65d), a film having a layer formed thereon containing a photosensitive resist material such as an acrylic photocurable resin, so-called a dry film, may be attached to the first surface (64a) and the second surface (64b) of the long metal plate (64).

[0193] Next, an exposure mask (68a, 68b) that prevents light from being transmitted to the area to be removed in the resist film (65c, 65d) may be prepared, and the exposure mask (68a, 68b) may be placed on the resist film (65c, 65d) as shown in FIG. 14. For example, a glass plate that prevents light from being transmitted to the area to be removed in the resist film (65c, 65d) may be used as the exposure mask (68a, 68b). After that, the exposure mask (68a, 68b) may be sufficiently adhered to the resist film (65c, 65d) by vacuum adhesion. In addition, a positive type may be used as the photosensitive resist material. In this case, an exposure mask that transmits light to the area to be removed in the resist film may be used as the exposure mask.

[0194] After that, the resist film (65c, 65d) may be exposed through the exposure mask (68a, 68b) (exposure process). In addition, the resist film (65c, 65d) may be developed to form an image on the exposed resist film (65c, 65d) (development process). In this way, as shown in FIG. 15, a first resist pattern (65a) may be formed on the first surface (64a) of the long metal plate (64), and a second resist pattern (65b) may be formed on the second surface (64b) of the long metal plate (64). In addition, the development process may include a resist heat treatment process to increase the hardness of the resist film (65c, 65d) or to firmly adhere the resist film (65c, 65d) to the long metal plate (64). The resist heat treatment process may be carried out in an atmosphere of inert gas such as argon gas, helium gas, or nitrogen gas, for example at a temperature of 100°C or higher and 400°C or lower.

[0195] Next, as shown in FIG. 16, a first surface etching process may be performed to etch an area of ​​the first surface (64a) of the long metal plate (64) that is not covered by the first resist pattern (65a) using a first etching solution. For example, the first etching solution may be sprayed toward the first surface (64a) of the long metal plate (64) beyond the first resist pattern (65a) from a nozzle positioned on the side facing the first surface (64a) of the long metal plate (64) being returned. As a result, as shown in FIG. 16, erosion by the first etching solution may proceed in the area of ​​the long metal plate (64) that is not covered by the first resist pattern (65a). By doing so, a plurality of first concave portions (30) may be formed on the first surface (64a) of the long metal plate (64). As the first etching solution, for example, a solution containing ferric chloride and hydrochloric acid may be used.

[0196] Afterwards, as shown in FIG. 17, the first concave portion (30) may be covered by a resin (69) having resistance to the second etching solution used in the subsequent second surface etching process. That is, the first concave portion (30) may be sealed by a resin (69) having resistance to the second etching solution. In the example shown in FIG. 17, the film of the resin (69) may be formed to cover not only the formed first concave portion (30) but also the first surface (64a) (first resist pattern (65a)).

[0197] Next, as shown in FIG. 18, a second surface etching process may be performed to etch an area of ​​the second surface (64b) of the long metal plate (64) that is not covered by the second resist pattern (65b) and to form a second concave portion (35) on the second surface (64b). The second surface etching process may be performed until the first concave portion (30) and the second concave portion (35) are connected to each other, thereby forming a through hole (25). As for the second etching solution, a solution containing, for example, ferric chloride solution and hydrochloric acid may be used, similar to the first etching solution described above.

[0198] Additionally, erosion by the second etching solution is carried out on the portion of the long metal plate (64) that is in contact with the second etching solution. Therefore, erosion is not carried out only in the normal direction N (thickness direction) of the long metal plate (64), but can also proceed in the direction along the plate surface of the long metal plate (64). Preferably, the second surface etching process may be completed before the two second concave portions (35), each formed at a position facing the two adjacent holes (66a) of the second resist pattern (65b), merge at the other side of the bridge portion (67a) located between the two holes (66a). By doing so, as shown in FIG. 19, the aforementioned saw portion (43) can be left on the second surface (64b) of the long metal plate (64).

[0199] After that, as shown in FIG. 20, the resin (69) may be removed from the long metal plate (64). The resin (69) may be removed, for example, by using an alkaline stripping solution. When an alkaline stripping solution is used, the resist patterns (65a, 65b) may also be removed simultaneously with the resin (69), as shown in FIG. 20. Additionally, after removing the resin (69), the resist patterns (65a, 65b) may be removed separately from the resin (69) by using a stripping solution different from the one used to strip the resin (69).

[0200] In this way, the long metal plate (64) having a plurality of through holes (25) formed therein may be conveyed to a cutting device (cutting means) (73) by a conveying roller (72, 72) that rotates while supporting the long metal plate (64). Additionally, the supply core (61) described above may be rotated through the tension (tensile stress) acting on the long metal plate (64) by the rotation of the conveying roller (72, 72), and the long metal plate (64) may be supplied from the winding body (62).

[0201] After that, the long metal plate (64) having a plurality of through holes (25) formed therein may be cut to a predetermined length and width by a cutting device (73). By doing so, a sheet metal plate (21) having a plurality of through holes (25) formed therein, i.e., a deposition mask (20), can be obtained.

[0202] Next, with reference to FIGS. 21 to 24, an example of a method for determining the quality of a deposition mask (20) by measuring dimensions X1 and X2 of the deposition mask (20) prepared as described above will be explained. Here, a method for determining the quality of a deposition mask (20) by measuring dimensions X1 and X2 using a quality determination system (80) described below and determining the quality of the deposition mask (20) based on the measurement results will be explained. That is, by measuring dimensions X1 and X2, it is possible to verify whether the through hole (25) of the deposition mask (20) is positioned as designed, and thereby determine whether the positional accuracy of the through hole (25) of the deposition mask (20) satisfies a predetermined standard.

[0203] However, in order to obtain a metal plate (21) with a small thickness, the rolling rate when manufacturing the metal plate (21) by rolling the base material may be increased. Here, the rolling rate is a value calculated by (thickness of base material - thickness of metal plate) / (thickness of base material). However, the elongation rate of the metal plate (64) varies depending on the position in the width direction D2 (a direction perpendicular to the conveying direction of the base material). Furthermore, the greater the rolling rate, the greater the degree of non-uniformity of deformation based on rolling. For this reason, it is known that a bending shape appears in a metal plate (64) rolled with a large rolling rate. Specifically, a bending shape formed on the side edge (64e) in the width direction D2 of the metal plate (64), called ear elongation, can be cited. Additionally, a bending shape formed in the center in the width direction D2 of the metal plate (64), called middle elongation, can be cited. Even if heat treatment such as annealing is performed after rolling, such a bending shape may appear. For example, as shown in FIG. 21, the long metal plate (64) has at least partially a bending shape resulting from the length in the longitudinal direction D1 being different depending on the position in the width direction D2. For example, the bending shape appears on the side edge (64e) of the long metal plate (64) that extends along the longitudinal direction D1.

[0204] In addition, metal plates with a predetermined thickness can be produced by a plating process. However, if the current density is non-uniform during the plating process, the thickness of the produced metal plate may become non-uniform. Consequently, there is a possibility that a similar curvature may appear on the side edges in the width direction of the metal plate.

[0205] Meanwhile, in the aforementioned exposure process for exposing the resist film (65c, 65d), the exposure mask is attached to the resist film (65c, 65d) on the long metal plate (64) by means of vacuum suction or the like. Because of this, due to the attachment with the exposure mask, the curved shape of the side edge (64e) of the long metal plate (64) is compressed as shown in FIG. 22, and the long metal plate (64) becomes nearly flat. In this state, as shown by the dotted line in FIG. 22, the resist film (65c, 65d) provided on the long metal plate (64) is exposed in a predetermined pattern.

[0206] When the exposure mask is separated from the long metal plate (64), a curved shape appears again on the side edge (64e) of the long metal plate (64). When a deposition mask (20) is manufactured and installed using the metal plate (64) with the curved shape formed in this way, the elongation of the deposition mask (20) differs in the width direction D2, and as a result, the position of the through hole (25) may be misaligned. More specifically, when the portion of the metal plate (64) with a large curved shape is formed as a deposition mask (20), the lengthwise dimension is longer than that of the portion with a small curved shape. Here, a case is assumed in which the deposition mask (20) is installed by applying tensile force to the first position portion and the second position portion, which are different in the width direction D2. In this case, if the longitudinal length of the deposition mask (20) in the first position portion is shorter than the longitudinal length in the second position portion, a tensile force is applied to the deposition mask (20) so that the longitudinal length of the first position portion becomes equal to the longitudinal length of the second position portion. Because of this, the first position portion is elongated more than the second position portion, and the longitudinal center portion of the deposition mask (20) may be misaligned toward the first position portion side in the width direction D2. It is desirable that the positional misalignment of the through hole (25) during elongation be small, and thereby, the positional misalignment of the deposition material (98) deposited on the organic EL substrate (92) through the through hole (25) can be suppressed, thereby improving the pixel dimensional accuracy and positional accuracy of the organic EL display device.

[0207] FIG. 23 is a drawing showing a long metal plate (64) in which a plurality of deposition masks (20) are assigned along the width direction D2 by etching. As shown in FIG. 23, among the three assigned deposition masks (20), the deposition masks (20) facing each other at least the side edges (64e) of the long metal plate (64) are formed as parts with a relatively large curved shape. In FIG. 23, reference numeral 27a indicates a side edge (hereinafter referred to as the first side edge) located at the center of the long metal plate (64) among the side edges of the deposition masks (20) assigned to face the side edges (64e) of the long metal plate (64). Additionally, in FIG. 23, reference numeral 27b indicates a side edge (hereinafter referred to as the second side edge) located opposite to the first side edge (27a) and facing the side edge (64e) of the long metal plate (64). As shown in FIG. 23, in the deposition mask (20) facing the side edge (64e) of the long metal plate (64), the portion on the second side edge (27b) side is formed with a larger curvature shape than the portion on the first side edge (27a) side.

[0208] FIG. 24 is a plan view showing a deposition mask (20) obtained by cutting the deposition mask (20), which was facing the side edge (64e) of the long metal plate (64), from the long metal plate (64). As described above, when the portion of the second side edge (27b) of the deposition mask (20) is formed with a larger curvature shape than the portion of the first side edge (27a), the length D1 in the longitudinal direction of the portion of the second side edge (27b) becomes longer than the length D1 in the longitudinal direction of the portion of the first side edge (27a). That is, the dimension of the second side edge (27b) in the longitudinal direction D1 (dimension according to the second side edge (27b)) becomes larger than the dimension of the first side edge (27a) (dimension according to the first side edge (27a)). In this case, as shown in FIG. 24, the deposition mask (20) has a curved shape that becomes convex in the direction from the first side edge (27a) to the second side edge (27b). Hereinafter, this curved shape is also referred to as a C-shape.

[0209] In this embodiment, the measurement of dimensions X1 and X2 of the deposition mask (20) is performed without applying tension to the deposition mask (20). Below, a method for determining quality according to this embodiment will be described.

[0210] FIG. 25 is a drawing showing a quality determination system that determines quality by measuring the dimensions of a deposition mask (20). As shown in FIG. 25, the quality determination system (80) may be equipped with a stage (81) on which the deposition mask (20) is loaded, a dimension measuring device (82), and a determination device (83).

[0211] The dimension measuring device (82) may include, for example, a measuring camera (imaging unit) that is provided above the stage (81) and captures the deposition mask (20) to produce an image. At least one of the stage (81) and the dimension measuring device (82) may be movable relative to each other. In this embodiment, the stage (81) may be stationary, and the dimension measuring device (82) may be movable in two directions parallel to the stage (81) and mutually orthogonal, and in a direction perpendicular to the stage (81). By doing so, the dimension measuring device (82) is configured to be movable to a desired position. Additionally, a pass / fail judgment system (80) may be configured such that the dimension measuring device (82) is stationary and the stage (81) is movable.

[0212] The measurement of the dimensions of the deposition mask (20) can be performed in different ways depending on the magnitude of the dimensions of the part of the deposition mask (20) to be measured.

[0213] When the dimensions of the object to be measured are relatively small (for example, less than several hundred micrometers), the object to be measured can be accommodated within the field of view of the measurement camera of the dimension measuring device (82), so the dimensions of the object to be measured can be measured without moving the measurement camera.

[0214] Meanwhile, when the dimensions of the object to be measured are relatively large (for example, on the order of mm or larger), it becomes difficult to accommodate the object to be measured within the field of view of the measurement camera of the dimension measuring device (82), so the dimensions of the object to be measured may be measured by moving the measurement camera. In this case, the dimension measuring device (82) may calculate the dimensions of the deposition mask (20) based on the image captured by the measurement camera and the amount of movement of the measurement camera (the amount of movement if the stage (81) is moved).

[0215] The determination device (83) may determine whether the above-described equations (1) and (2) are satisfied based on the measurement result by the dimension measuring device (82). The determination device (83) may include an arithmetic unit and a memory medium. The arithmetic unit is, for example, a CPU. The memory medium is, for example, a memory such as ROM or RAM. The determination device (83) may perform a dimension determination process of the deposition mask (20) by executing a program stored in the memory medium through the arithmetic unit.

[0216] In the method for determining the quality of a deposition mask (20) according to the present embodiment, a measurement process may first be performed to measure the dimensions X1 and X2 of the deposition mask (20).

[0217] In this case, the deposition mask (20) may first be lightly loaded onto the stage (81). At this time, the deposition mask (20) may be loaded without being fixed to the stage (81). That is, tension does not need to be applied to the deposition mask (20). The deposition mask (20) loaded onto the stage (81) may be bent into a C shape, for example, as shown in FIG. 24.

[0218] Next, points P1, Q1, P2, and Q2 may be set. Here, points P1 and Q1 are the desired design values ​​α at the time of design (or installation, deposition). X An example is described in which the center points of two through holes (25) are spaced apart by a distance equivalent to . Likewise, points P2 and Q2 are the desired design value α at the time of design. X It may also be set at the center point of two through holes (25) spaced apart by a distance equivalent to that. Additionally, points P1 and P2 may be set at the desired design value α during design. Y It may be set at the center point of two through holes (25) spaced apart by a distance equivalent to that. Likewise, points Q1 and Q2 are the desired design value α at the time of design. YIt may be set at the center point of two through holes (25) spaced apart by an equal distance.

[0219] For example, the desired design value α X Along with setting to 200mm, α Y When is set to 65.0mm, the center points of the through holes (25) positioned at the vertices (corners) of a 200mm × 65.0mm rectangle may be set to points P1, Q1, P2, and Q2. Here, if there is no center point of the through hole (25) corresponding to the vertex of this rectangle, the center points of the through holes (25) near the vertex (preferably closest to the vertex) may be set to points P1, Q1, P2, and Q2. In this case, the design value α corresponding to the points P1, Q1, P2, and Q2 set in this manner X and α Y It can be obtained and used in the judgment process described later. In addition, if there are two or more through holes (25) closest to the vertex, it can be set in any one of the through holes (25).

[0220] The center point of the through hole (25) may be the center point of the planar shape of the connection part (41) (or through part (42)) described above. This center point may be defined as the centroid that can support a shape with a constant density and the same planar shape as the connection part (41) at one point. By doing so, the center point can be determined even if the planar shape of the through hole (25) is complex. As a device for determining the center point, for example, the coordinate measuring instrument AMIC1710-D (manufactured by Shinto S. Precision Co., Ltd.) may be used. Additionally, the center point of the through hole (25) may be the center point of the planar shape of the first concave part (30) in the first surface (20a), or the center point of the planar shape of the second concave part (35) in the second surface (20b).

[0221] Next, dimensions X1 and X2 (see FIG. 24) of the deposition mask (20) on the stage (81) may be measured. In this case, points P1, Q1, P2, and Q2 of the deposition mask (20) may be captured by the measurement camera of the dimension measuring device (82) described above shown in FIG. 25, and the coordinates of points P1, Q1, P2, and Q2 may be calculated based on the captured image and, if the measurement camera has moved, the amount of movement. Then, based on the coordinates of each calculated point, dimension X1, which is the straight-line distance from point P1 to point Q1, and dimension X2, which is the straight-line distance from point P2 to point Q2, may be calculated.

[0222] Next, a determination process for determining the quality of the deposition mask (20) based on the dimensions X1 and X2 measured in the dimension measurement process may be performed.

[0223] For example, based on the measurement results by the dimension measuring device (82), it may be determined whether the calculated dimensions X1 and X2 satisfy at least one of the above-described equations (1) and (2). That is, as the dimensions X1 and X2 calculated as described above are substituted into the above-described equation (1), α X The design value is substituted into it, and the left side of Equation (1) may be calculated as an absolute value. The value of this left side is the design value α X It may be determined whether the value of the right-hand side based on is less than or equal to the value of the formula (1). A deposition mask (20) that satisfies formula (1) may be determined to be a good product (OK), and a deposition mask (20) that does not satisfy formula (1) may be determined to be a defective product (NG).

[0224] Likewise, the calculated dimensions X1 and X2 are substituted into the above-described Equation (2), and the left side of Equation (2) is calculated as an absolute value, and the value of this left side is the design value α X and α YIt may be determined whether the value of the right-hand side based on is less than or equal to the value of the formula (2). A deposition mask (20) that satisfies formula (2) may be determined to be a good product (OK), and a deposition mask (20) that does not satisfy formula (2) may be determined to be a defective product (NG).

[0225] In this way, a deposition mask (20) satisfying at least one of Equation (1) and Equation (2) may be determined as a good product. However, it is not limited to this, and a deposition mask (20) satisfying both Equation (1) and Equation (2) may be determined as a good product. However, a deposition mask (20) that satisfies Equation (1) but does not satisfy Equation (2) may be determined as a good product, or a deposition mask (20) that satisfies Equation (2) but does not satisfy Equation (1) may be determined as a good product.

[0226] Next, a deposition mask (20) is selected. Here, an example of a selection method for selecting a deposition mask (20) that satisfies at least one of Equation (1) and Equation (2) is described.

[0227] That is, a deposition mask (20) determined to be good according to Equation (1) and a deposition mask (20) determined to be defective may be selected. In addition, a deposition mask (20) that is good according to Equation (1) may be selected as a deposition mask manufactured by the manufacturing method according to the present embodiment.

[0228] In addition, among the deposition masks (20) determined to be defective according to Equation (1), the deposition mask (20) determined to be good according to Equation (2) and the deposition mask (20) determined to be defective may be selected. Furthermore, the deposition mask (20) that satisfies Equation (2) and is a good product may be selected as the deposition mask manufactured by the manufacturing method according to the present embodiment. In addition, the deposition mask (20) that satisfies Equation (2) may be selected before selecting the deposition mask (20) that satisfies Equation (1).

[0229] In this way, a deposition mask (20) satisfying at least one of Equation (1) and Equation (2) may be selected as a deposition mask manufactured by the manufacturing method according to the present embodiment. The selected deposition mask (20) may be used in the manufacturing method of a deposition mask device described later. Furthermore, the deposition mask (20) selected in the selection process may be a deposition mask (20) satisfying both Equation (1) and Equation (2). However, a deposition mask (20) that satisfies Equation (1) but does not satisfy Equation (2) may be selected, or a deposition mask (20) that satisfies Equation (2) but does not satisfy Equation (1) may be selected.

[0230] Next, an example of a method for manufacturing a deposition mask device (10) using a deposition mask (20) that has been determined to be a good product and selected will be described. In this case, as shown in FIG. 3, a plurality of deposition masks (20) may be installed on a frame (15). More specifically, tension in the longitudinal direction D1 of the deposition mask (20) may be applied to the deposition mask (20), and the corner portions (17a, 17b) of the deposition mask (20) in a state where tension is applied may be fixed to the frame (15). The corner portions (17a, 17b) are fixed to the frame (15), for example, by spot welding.

[0231] When the deposition mask (20) is installed on the frame (15), the deposition mask (20) may be subjected to a longitudinal tension D1. In this case, as shown in FIG. 26, the first end (26a) of the deposition mask (20) may be held by the first clamp (86a) and the second clamp (86b) positioned on both sides of the first central axis AL1, and the second end (26b) may be held by the third clamp (86c) and the fourth clamp (86d) positioned on both sides of the first central axis AL1. The first tension member (87a) may be connected to the first clamp (86a), and the second tension member (87b) may be connected to the second clamp (86b). The third tension member (87c) may be connected to the third clamp (86c), and the fourth tension member (87d) may be connected to the fourth clamp (86d). When applying tension to the deposition mask (20), the first tension member (87a) and the second tension member (87b) are driven to move the first clamp (86a) and the second clamp (86b) relative to the third clamp (86c) and the fourth clamp (86d), thereby applying tensions T1 and T2 to the deposition mask (20) in the longitudinal direction D1. In this case, the tension applied to the deposition mask (20) is the sum of the tension T1 of the first tension member (87a) and the tension T2 of the second tension member (87b). Additionally, each tension member (87a to 87d) may include, for example, an air cylinder. Furthermore, the third clamp (86c) and the fourth clamp (86d) may be rendered immovable without using the third tension member (87c) and the fourth tension member (87d).

[0232] When tensions T1 and T2 in the longitudinal direction D1 are applied to the deposition mask (20), the deposition mask (20) is extended in the longitudinal direction D1 but contracts in the width direction D2. When extending, the tension T1 of the first tension part (87a) and the tension T2 of the second tension part (87b) may be adjusted so that all through holes (25) of the deposition mask (20), which is elastically deformed in this way, can be positioned within an allowable range with respect to a desired position (deposition target position). By doing so, the extension in the longitudinal direction D1 and the contraction in the width direction D2 of the deposition mask (20) can be locally adjusted, and each through hole (25) can be positioned within an allowable range. For example, if the deposition mask (20) in a state where no tension is applied is curved in a C shape so as to become convex in the direction from the first side edge (27a) side toward the second side edge (27b) side as shown in FIG. 24, the tension T1 of the first tension part (87a) on the first side edge (27a) side may be greater than the tension T2 of the second tension part (87b). By doing so, a greater tension can be applied to the part on the first side edge (27a) side than to the part on the second side edge (27b) side. Because of this, the part on the first side edge (27a) side can be extended more than the part on the second side edge (27b) side, and each through hole (25) can be easily positioned within the allowable range. Conversely, if the deposition mask (20) in a state where no tension is applied is curved in a C shape so as to be convex in the direction from the second side edge (27b) to the first side edge (27a), the tension T2 of the second tension part (87b) on the second side edge (27b) side may be greater than the tension T1 of the first tension part (87a). By doing so, a greater tension can be applied to the portion on the second side edge (27b) side than to the portion on the first side edge (27a) side.Because of this, the portion of the second side edge (27b) can be extended more than the portion of the first side edge (27a), so that each through hole (25) can be easily positioned within the allowable range.

[0233] However, even when the tension applied to the deposition mask (20) is locally adjusted, depending on the positional precision of the through holes (25) formed in the deposition mask (20), it may be difficult to position each through hole (25) within an allowable range. For example, if dimensions X1 and X2 deviate significantly from the design values, the elongation of the deposition mask (20) in the longitudinal direction D1 increases, causing the contraction of the deposition mask (20) in the width direction D2 to increase, or conversely, the elongation of the deposition mask (20) in the longitudinal direction D1 decreases, causing the contraction of the deposition mask (20) to decrease. When installing, it is desirable to position each through hole (25) within an allowable range for the desired position (target deposition position). Equation (1) is an equation intended to suppress the occurrence of positional defects of each through hole (25) during installation due to such causes.

[0234] That is, as in the present embodiment, the dimensions X1 and X2 of the deposition mask (20) placed on the stage (81), etc., satisfy Equation (1), so that the elongation amount D1 in the length direction of the deposition mask (20) during installation can be accommodated within a desired range. Because of this, the shrinkage amount D2 in the width direction of the deposition mask (20) during installation can be accommodated within a desired range. As a result, since the dimensions X1 and X2 satisfy Equation (1), the position adjustment of each through hole (25) during installation can be facilitated.

[0235] In addition, generally, even when the deposition mask (20) is formed with a long metal plate (64) having a curved shape, depending on the degree of the curved shape, it may be difficult to position each through hole (25) at a desired location during installation. This is because the lengthwise dimensions in the width direction D2 are considered to be different due to the difference in the degree of the curved shape in the width direction D2 of the long metal plate (64). In this case, when dimensions X1 and X2 are different and not installed, the deposition mask (20) can be curved into a C shape as shown in FIG. 24.

[0236] For example, in a curved deposition mask (20) as shown in FIG. 24, when not in use, dimension X1 is shorter than dimension X2. Therefore, when the deposition mask (20) is in use, as shown in FIG. 27, a tensile force is applied to the deposition mask (20) so that dimension X1 becomes equal to dimension X2. In this case, the portion on the first side edge (27a) side is extended more than the portion on the second side edge (27b) side, so that the center position in the longitudinal direction D1 of the deposition mask (20) is shifted toward the first side edge (27a) side, and thereby the through hole (25) can be displaced toward the width direction D2. In addition, even when the deposition mask (20) is in use so that dimension X1 and dimension X2 become equal, as shown in FIG. 28, the curved shape of the deposition mask (20) may be reversed. In this case, the first side edge (27a) becomes convex and the second side edge (27b) is curved into a concave shape. Even in this case, the through hole (25) can be displaced in the width direction D2.

[0237] For this reason, it is desirable to minimize the positional misalignment of the through holes (25) in the width direction D2, and it is desirable to position all through holes (25) within an allowable range for the desired position (deposition target position). Equation (2) is an equation intended to suppress the occurrence of positional defects in each through hole (25) during installation due to this cause.

[0238] That is, as in the present embodiment, the dimensions X1 and X2 of the deposition mask (20) placed on the stage (81), etc., satisfy Equation (2), thereby preventing the length D1 of the deposition mask (20) from differing in the width direction D2, and preventing the elongation D1 in the length direction from differing in the width direction D2 when extended. Because of this, the positional misalignment of the through holes (25) in the width direction D2 can be prevented when extended. As a result, since the dimensions X1 and X2 satisfy Equation (2), each through hole (25) can be easily positioned within an allowable range when extended.

[0239] Next, an example of a method for depositing a deposition material (98) on an organic EL substrate (92) using the obtained deposition mask device (10) will be described.

[0240] In this case, first, as shown in FIG. 1, a frame (15) is positioned so that the deposition mask (20) faces the organic EL substrate (92). Next, the deposition mask (20) is brought into close contact with the organic EL substrate (92) using a magnet (93). Then, in this state, the deposition material (98) is evaporated and the deposition material (98) is projected onto the organic EL substrate (92) through the through hole (25) of the deposition mask (20). By doing so, the deposition material (98) can be attached to the organic EL substrate (92) in a predetermined pattern.

[0241] According to the present embodiment, the quality of the deposition mask (20) is determined based on the dimension X1 from point P1 to point Q1 on one side of the first central axis line AL1 of the deposition mask (20), and the dimension X2 from point P2 to point Q2 on the other side. By using these dimensions X1 and X2, the elongation of the deposition mask (20) in the length direction D1 differs from that in the width direction D2 during installation, thereby preventing positional misalignment of the through holes (25) in the width direction D2. Because of this, a deposition mask device (10) can be manufactured using a deposition mask (20) that has been determined to be a good product, and the positional accuracy of each through hole (25) of the deposition mask (20) in the deposition mask device (10) can be improved. As a result, the positional accuracy of the through holes (25) during installation can be improved. In this case, the deposition material (98) can be deposited on the substrate (92) with high positional precision, making it possible to produce a high-precision organic EL display device (100).

[0242] In addition, according to the present embodiment, it is determined whether the dimension X1 from point P1 to point Q1 and the dimension X2 from point P2 to point Q2 satisfy the above-described equation (1). By doing so, in a deposition mask (20) that is determined to be a good product because the dimensions X1 and X2 satisfy the predetermined conditions according to equation (1), the deviation from the design values ​​of dimensions X1 and X2 can be reduced. Therefore, when the deposition mask (20) is installed, the amount of shrinkage in the width direction D2 can be accommodated within a desired range, thereby improving the positional accuracy of the through hole (25).

[0243] In addition, according to the present embodiment, it is determined whether the dimension X1 from point P1 to point Q1 and the dimension X2 from point P2 to point Q2 satisfy the above-described equation (2). By doing so, in a deposition mask (20) in which the dimension X1 and the dimension X2 satisfy a predetermined condition according to equation (2) and are determined to be good products, the difference between the dimension X1 and the dimension X2 can be reduced. Because of this, when the deposition mask (20) is installed, the elongation in the length direction D1 of the deposition mask (20) can be suppressed in the width direction D2, thereby suppressing the positional misalignment of the through hole (25) in the width direction D2. As a result, the positional accuracy of the through hole (25) during installation can be improved.

[0244] In addition, according to the present embodiment, points P1 and P2 are intended to be arranged symmetrically with respect to the first central axis line AL1 of the deposition mask (20) during deposition, and points Q1 and Q2 are intended to be arranged symmetrically with respect to the first central axis line AL1 of the deposition mask (20) during deposition. By doing so, points P1, Q1, P2, and Q2 can be set at the same location in the longitudinal direction D1 of the deposition mask (20) and at a location with an equal distance from the first central axis line AL1. Therefore, the accuracy of determining the quality of the deposition mask (20) can be improved.

[0245] In addition, according to the present embodiment, points P1 and P2 are positioned on one side with respect to the second central axis line AL2 of the deposition mask (20), and points Q1 and Q2 are positioned on the other side. By doing so, points P1, P2, Q1, and Q2 can be set on both sides of the second central axis line AL2. Therefore, the accuracy of determining the quality of the deposition mask (20) can be improved.

[0246] In addition, according to the present embodiment, points P1 and Q1 are intended to be arranged symmetrically with respect to the second central axis line AL2 of the deposition mask (20) during deposition, and points P2 and Q2 are intended to be arranged symmetrically with respect to the second central axis line AL2 during deposition. Accordingly, points P1, Q1, P2, and Q2 can be set at the same location in the width direction D2 of the deposition mask (20) and at a location with an equal distance from the second central axis line AL2. Therefore, the accuracy of determining the quality of the deposition mask (20) can be improved.

[0247] In addition, according to the present embodiment, a deposition mask (20) satisfying Equation (1) is selected and manufactured as a deposition mask (20). By doing so, a deposition mask (20) can be obtained that can reduce deviations from the design values ​​of dimensions X1 and X2. Because of this, when the deposition mask (20) is installed, the amount of shrinkage in the width direction D2 can be accommodated within a desired range, thereby improving the positional accuracy of the through hole (25).

[0248] In addition, according to the present embodiment, a deposition mask (20) satisfying Equation (2) is selected and manufactured as a deposition mask (20). By doing so, a deposition mask (20) capable of reducing the difference between dimension X1 and dimension X2 can be obtained. Because of this, when the deposition mask (20) is installed, the elongation in the longitudinal direction D1 of the deposition mask (20) can be suppressed in the width direction D2, thereby suppressing the positional misalignment of the through hole (25) in the width direction D2. As a result, the positional accuracy of the through hole (25) during installation can be improved.

[0249] In addition, various modifications can be made to the embodiments described above. Below, variations are described with reference to the drawings as necessary. In the following description and the drawings used in the description, redundant descriptions are omitted by using the same reference numerals as those used for corresponding parts in the embodiments described above for parts that can be configured in the same manner as the embodiments described above. Furthermore, if it is clear that the functional effects obtained in the embodiments described above are also obtained in the variations, such descriptions may be omitted.

[0250] In addition, in the above-described embodiment, an example was shown of measuring the dimensions of a deposition mask (20) produced by etching a rolled metal plate. However, the dimensions of a deposition mask (20) produced by other methods, such as plating, may also be measured using the above-described dimension measurement method and quality determination system (80).

[0251] In addition, in the above-described embodiment, a deposition mask (20) satisfying at least one of Equation (1) and Equation (2) is determined to be a good product and selected as a deposition mask manufactured by the manufacturing method according to the present embodiment. However, as long as the quality of the deposition mask (20) can be determined based on dimensions X1 and X2, the determination method or the formula used for the determination is not particularly limited. That is, by determining the quality using dimensions X1 from point P1 to point Q1 on one side of the first central axis line AL1 of the deposition mask (20) and dimensions X2 from point P2 to point Q2 on the other side, the deposition mask (20) determined to be a good product can suppress the elongation in the length direction D1 of the deposition mask (20) from being different in the width direction D2 when installed. Because of this, positional misalignment in the width direction D2 of the through hole (25) can be suppressed, and positional accuracy of each through hole (25) of the deposition mask (20) in the deposition mask device (10) can be improved.

[0252] The present invention is not limited to the above-described embodiments and variations themselves, and may be embodied by modifying the components within the scope of not departing from the gist thereof during the implementation phase. Furthermore, various inventions may be formed by appropriate combinations of a plurality of components disclosed in the above-described embodiments and variations. Several components may be deleted from the entire set of components appearing in the embodiments and variations.

[0253] Examples

[0254] Next, the present embodiment will be explained in more detail by way of examples, but the present embodiment is not limited to the description of the following examples as long as it does not exceed the gist thereof.

[0255] 25 deposition masks (20) were prepared and used as samples 1 through 25. For each sample, dimensions X1 and X2 were measured.

[0256] First, as shown in FIG. 25, a deposition mask (20) was placed horizontally on a stage (81). At that time, the deposition mask (20) was placed slightly on the stage (81) so that no partial indentation occurred in the deposition mask (20).

[0257] Next, the dimension X1 from point P1 to point Q1 of the deposition mask (20) was measured, and the dimension X2 from point P2 to point Q2 was measured. The measurement result was α X -X1 and, α X -X2 is shown in FIGS. 29 to 46. In FIGS. 29 to 46, α X As ga becomes 200mm, 300mm, 400mm, 600mm, 800mm, 900mm, α Y Points P1 and Q1, and points P2 and Q2 were set at the center of the through hole (25) which has dimensions of 65.0 mm, 43.3 mm, and 21.7 mm. The numerical values ​​shown in FIGS. 29 to 46 are expressed in μm units. The first to 25 samples shown in FIGS. 29 to 46 are the same sample. For the first sample, each α X and each α Y Dimensions were measured at and are shown in FIGS. 29 to 46. The same applies to samples 2 through 25. Samples 1 through 25 are all W Y The width is 65.0 mm.

[0258] In FIG. 29, α X Ga 200mm, α YThe measurement results are shown when points P1 and Q1 and points P2 and Q2 are set at the center of the through hole (25) which is 65.0 mm. In this case, the measured dimensions X1 and X2 were substituted into the above-described equation (1) to calculate the left side of equation (1). The result of the calculation is |α X -(X1+X2) / 2| is shown in FIG. 29. FIG. 29 shows the dimensional measurement results for 25 deposition masks (20) obtained from each of the 25 samples. Here, α X Since the value of the right side of Equation (1) is 200 mm, the value of the right side (threshold of the left side) of Equation (1) becomes 13.3 μm. Among the first to 25 samples, the first to 10 samples, the 21st sample, the 22nd sample, the 24th sample, and the 25th sample satisfied Equation (1). For this reason, the deposition mask (20) of the first to 10 samples, the 21st sample, the 22nd sample, the 24th sample, and the 25th sample was determined to be a deposition mask (20) (good quality) capable of improving the positional accuracy of the through hole (25) during installation.

[0259] In addition, the dimensions X1 and X2 of the deposition mask (20) were substituted into the above-described equation (2) to calculate the left side of equation (2). The result of the calculation is shown in FIG. 29 as |X1-X2|. Here, α Y Since the value of the right side of Equation (2) is 65.0 mm, the value of the right side (threshold of the left side) of Equation (2) becomes 20 μm. Among the first to 25 samples, the first to 6 samples, the 11th to 16th samples, the 21st sample, and the 23rd sample satisfied Equation (2). For this reason, the deposition mask (20) of the first to 6 samples, the 11th to 16th samples, the 21st sample, and the 23rd sample was determined to be a deposition mask (20) (good quality) capable of improving the positional accuracy of the through hole (25) during installation.

[0260] To explain in more detail, as shown in the comprehensive judgment result in FIG. 29, among the first to 25 samples, the first to 6 samples and the 21st sample satisfy Equation (1) and Equation (2). For this reason, the deposition mask (20) of the first to 6 samples and the 21st sample was determined to be a deposition mask (20) (good product) capable of further improving the positional accuracy of the through hole (25) when installed.

[0261] Here, we explain why satisfying the above-described equations (1) and (2) can improve the positional accuracy of the through hole (25) during installation.

[0262] First, Equation (1) will be explained. As described above, Equation (1) is intended to suppress positional defects in each through hole (25) during installation caused by dimensions X1 and X2 deviating from the design values. That is, by satisfying Equation (1), the elongation amount of the deposition mask (20) in the longitudinal direction D1 during installation can be accommodated within a desired range, and thereby the contraction amount of the deposition mask (20) in the width direction D2 during installation can be accommodated within a desired range. Therefore, in order to confirm that satisfying Equation (1) contributes to improving the positional accuracy of the through hole (25) during installation, attention is paid to the width dimension U1 (see FIG. 24) of the deposition mask (20) during installation. This dimension U1 corresponds to the width dimension at the center position (second center axis AL2) in the longitudinal direction D1. The amount of shrinkage in the width direction D2 at this center position can be maximized. Also, in FIG. 24, a deposition mask (20) without tension is shown, but for convenience, the dimension U1 when extended is shown in FIG. 24. The same applies to the dimension U2 described later.

[0263] Next, Equation (2) will be explained. As described above, Equation (2) is intended to prevent positional errors in each through hole (25) during installation caused by the misalignment of dimensions X1 and X2. That is, by satisfying Equation (2), the elongation in the longitudinal direction D1 differs from the width direction D2 during installation, thereby preventing positional misalignment of the through hole (25) in the width direction D2. Therefore, to confirm that satisfying Equation (2) contributes to improving the positional accuracy of the through hole (25) during installation, attention is paid to the depth dimension U2 of the concave portion of the first side edge (27a) of the deposition mask (20) which is curved in a C shape. This dimension U2 corresponds to the depth dimension of the concave portion at the center position in the longitudinal direction D1. More specifically, the distance from the line segment connecting the intersection point PU1 of the first end (26a) and the first side edge (27a) of the deposition mask (20) and the intersection point PU2 of the second end (26b) and the first side edge (27a) to the center position in the longitudinal direction D1 of the first side edge (27a) is defined as dimension U2. This dimension U2 represents the maximum depth of the concave portion of the first side edge (27a). Additionally, as shown in FIG. 28, if the curved shape of the deposition mask (20) is reversed during installation, dimension U2 can be defined as the depth of the concave portion of the second side edge (27b).

[0264] The measurement method for dimensions U1 and U2 is described below.

[0265] First, after the measurement of dimensions X1 and X2 was completed, tension was applied to the deposition mask (20). More specifically, first, the first end (26a) and the second end (26b) of the deposition mask (20) were gripped with clamps (86a to 86d) as shown in FIG. 26, for example, and tension was applied to the deposition mask (20) from the first tensioning part (87a) to the fourth tensioning part (87d). The applied tension was a force capable of positioning each through hole (25) within an allowable range for a desired position (deposition target position) in the longitudinal direction D1. Next, the deposition mask (20) with tension applied was fixed on the stage (81) shown in FIG. 25. Subsequently, dimensions U1 and U2 of the deposition mask (20) fixed on the stage (81) were measured. The measurement result of dimension U1 is α U -U1 is shown in Fig. 29. Here, α U was set as the design value of the width dimension of the deposition mask (20) at the center position in the longitudinal direction D1. In addition, α U is the design value at the time of installation. In addition, the measurement result of dimension U2 is shown as U2 in FIG. 29.

[0266] The measured dimensions U1 and U2 were evaluated.

[0267] For dimension U1, α U-U1 was evaluated based on whether it was below the threshold (±4.0㎛). Here, the threshold was set as a value that allows positional misalignment within a range capable of suppressing the luminous efficiency of the pixel formed by deposition or color mixing with adjacent pixels of different colors. Additionally, when tension D1 in the longitudinal direction is applied to the deposition mask (20), the width dimension of the deposition mask (20) can be reduced at the center position in the longitudinal direction D1. In this case, the first side edge (27a) and the second side edge (27b) deform so that they are close to each other at the center position in the longitudinal direction D1. Thus, the allowable deformation value for the first side edge (27a) and the second side edge (27b) is considered to be 2㎛ each, and the threshold was set to ±4.0㎛ as the sum thereof. Among the samples shown in FIG. 29, in samples 1 to 10, 21, 22, 24, and 25, α U -U1 was below the threshold. In samples 1 through 10, 21, 22, 24, and 25, the misalignment of the width dimension U1 of the deposition mask (20) is suppressed, so the positional misalignment of the width direction D2 of the through hole (25) during installation can be suppressed. Meanwhile, these samples 1 through 10, 21, 22, 24, and 25 satisfy Equation (1) as described above. Therefore, satisfying Equation (1) can be said to improve the positional accuracy of the through hole (25) during installation.

[0268] In particular, dimension U1 represents the width dimension of the deposition mask (20) at the center position in the longitudinal direction D1. This center position is the position where the through hole (25) can be offset most in the width direction D2. For this reason, α at this center position U- If U1 is below the threshold, it can be said that the positional misalignment of the through hole (25) in the width direction D2 at a position other than the center position in the longitudinal direction D1 can be further suppressed.

[0269] Regarding the dimension U2, it was evaluated based on whether the dimension U2 was below the threshold (3.0 μm). Here, the threshold was set as a value that allows positional misalignment within a range capable of suppressing the luminous efficiency of the pixel formed by deposition or mixing with adjacent pixels of different colors. Among the samples shown in FIG. 29, the first to sixth samples, the eleventh to eleventh samples, the twentieth sample, and the twentieth sample were below the threshold. As a result, in the first to sixth samples, the eleventh to eleventh samples, the twentieth sample, and the twentieth sample, the degree of the concave portion of the first side edge (27a) of the deposition mask (20) is reduced, thereby suppressing positional misalignment of the width direction D2 of the through hole (25) during installation. Meanwhile, these first to sixth samples, eleventh to eleventh samples, the twentieth sample, and the twentieth sample satisfy Equation (2) as described above. For this reason, satisfying equation (2) can improve the positional accuracy of the through hole (25) during installation.

[0270] In particular, dimension U2 represents the depth dimension of the concave portion of the first side edge (27a) of the deposition mask (20) at the center position in the longitudinal direction D1. This center position is the position where the through hole (25) can be most misaligned in the width direction D2. Therefore, if the dimension U2 at this center position is below the threshold, it can be said that the misalignment of the through hole (25) in the width direction D2 at positions other than the center position in the longitudinal direction D1 can be further suppressed.

[0271] In FIG. 30, α X Ga 200mm, α YThe measurement results are shown when points P1, Q1, P2, and Q2 are set at the center of a through hole (25) that is 43.3 mm (2 / 3 of 65 mm). In this case, the measured dimensions X1 and X2 were substituted into the above-described equation (1) to calculate the left side of equation (1). The result of the calculation is |α X -(X1+X2) / 2| is shown in FIG. 30. FIG. 30 shows the dimensional measurement results for 25 deposition masks (20) obtained from each of the 25 samples. Here, α X Since the value of the right side of Equation (1) is 200 mm, the value of the right side (threshold of the left side) of Equation (1) becomes 13.3 μm. Among the first to 25 samples, the first to 10 samples, the 21st sample, the 22nd sample, the 24th sample, and the 25th sample satisfied Equation (1). For this reason, the deposition mask (20) of the first to 10 samples, the 21st sample, the 22nd sample, the 24th sample, and the 25th sample was determined to be a deposition mask (20) (good quality) capable of improving the positional accuracy of the through hole (25) during installation.

[0272] In addition, the dimensions X1 and X2 of the deposition mask (20) were substituted into the above-described equation (2) to calculate the left side of equation (2). The result of the calculation is shown in FIG. 30 as |X1-X2|. Here, α Y Since the value of the right side of Equation (2) is 43.3 mm, the value of the right side (threshold of the left side) of Equation (2) becomes 13.3 μm. Among the first to 25 samples, the first to 6 samples, the 11th to 16th samples, the 21st sample, and the 23rd sample satisfied Equation (2). For this reason, the deposition mask (20) of the first to 6 samples, the 11th to 16th samples, the 21st sample, and the 23rd sample was determined to be a deposition mask (20) (good quality) capable of improving the positional accuracy of the through hole (25) during installation.

[0273] To explain in more detail, as shown in the comprehensive judgment result in FIG. 30, among the first to 25 samples, the first to 6 samples and the 21st sample satisfy Equation (1) and Equation (2). For this reason, the deposition mask (20) of the first to 6 samples and the 21st sample was determined to be a deposition mask (20) (good product) capable of further improving the positional accuracy of the through hole (25) when installed.

[0274] In Fig. 31, α X Ga 200mm, α Y The measurement results are shown when points P1, Q1, P2, and Q2 are set at the center of a through hole (25) that is 21.7 mm (1 / 3 of 65 mm). In this case, the measured dimensions X1 and X2 were substituted into the above-described equation (1) to calculate the left side of equation (1). The result of the calculation is |α X -(X1+X2) / 2| is shown in FIG. 31. FIG. 31 shows the dimensional measurement results for 25 deposition masks (20) obtained from each of the 25 samples. Here, α X Since the value of the right side of Equation (1) is 200 mm, the value of the right side (threshold of the left side) of Equation (1) becomes 13.3 μm. Among the first to 25 samples, the first to 10 samples, the 21st sample, the 22nd sample, the 24th sample, and the 25th sample satisfied Equation (1). For this reason, the deposition mask (20) of the first to 10 samples, the 21st sample, the 22nd sample, the 24th sample, and the 25th sample was determined to be a deposition mask (20) (good quality) capable of improving the positional accuracy of the through hole (25) during installation.

[0275] In addition, the dimensions X1 and X2 of the deposition mask (20) were substituted into the above-described equation (2) to calculate the left side of equation (2). The result of the calculation is shown in FIG. 31 as |X1-X2|. Here, α YSince the value of the right side of Equation (2) is 21.7 mm, the value of the right side (threshold of the left side) of Equation (2) becomes 6.7 μm. Among the first to 25 samples, the first to 6 samples, the 11th to 16th samples, the 21st sample, and the 23rd sample satisfied Equation (2). For this reason, the deposition mask (20) of the first to 6 samples, the 11th to 16th samples, the 21st sample, and the 23rd sample was determined to be a deposition mask (20) (good quality) capable of improving the positional accuracy of the through hole (25) during installation.

[0276] To explain in more detail, as shown in the comprehensive judgment result in FIG. 31, among the first to 25 samples, the first to 6 samples and the 21st sample satisfy Equation (1) and Equation (2). For this reason, it was determined that the deposition mask (20) (good product) can further improve the positional accuracy of the through hole (25) when installed.

[0277] As shown in FIGS. 29 to 31, other α Y Even when a pass / fail judgment was made based on the P1, Q1, P2, and Q2 points set as such, the same judgment result was obtained. In this way, it is shown that an appropriate pass / fail judgment can be made without being constrained by the distance between P1 and P2 (the distance between Q1 and Q2). That is, by using at least one of Equation (1) and Equation (2), it can be said that the result of the pass / fail judgment can be suppressed from being influenced by the distance between P1 and P2 (the distance between Q1 and Q2).

[0278] In FIGS. 32 to 34, α X The measurement results and pass / fail judgment results are shown when points P1, Q1, P2, and Q2 are set at the center of the through hole (25) which is 300 mm. Among these, in FIG. 32, α Y Set to 65.0 mm, and in Fig. 33, α YSet to 43.3mm, and in FIG. 34, α Y is set to 21.7 mm. In FIGS. 32 to 34, α X Since α is 300 mm, the value of the right side (threshold of the left side) of Equation (1) becomes 20.0 μm. In FIG. 32, α Y Since α is 65.0 mm, the value of the right side (threshold of the left side) of Equation (2) becomes 30.0 μm. In FIG. 33, α Y Since α is 43.3 mm, the value of the right side of Equation (2) (threshold of the left side) becomes 20.0 μm, and in FIG. 34, α Y Since α is 21.7 mm, the value of the right side of Equation (2) (the threshold of the left side) becomes 10.0 μm.

[0279] In the case shown in FIGS. 32 to 34, the same judgment result as in FIGS. 29 to 31 was obtained. That is, the deposition mask (20) of samples 1 to 10, 21, 22, 24, and 25 was determined to be a deposition mask (20) (good product) capable of improving the positional accuracy of the through hole (25) during installation because it satisfies Equation (1). The deposition mask (20) of samples 1 to 6, 11 to 16, 21, and 23 was determined to be a deposition mask (20) (good product) capable of improving the positional accuracy of the through hole (25) during installation because it satisfies Equation (2). In addition, the deposition mask (20) of the first to sixth samples and the 21st sample was determined to be a deposition mask (20) (good product) capable of further improving the positional precision of the through hole (25) during installation, since it satisfies Equation (1) and Equation (2). In addition, it was shown that by using at least one of Equation (1) and Equation (2), the result of the good / bad determination can be suppressed from being affected by the distance between point P1 and point P2 (distance between point Q1 and point Q2).

[0280] In FIGS. 35 to 37, αX The measurement results and pass / fail judgment results are shown when points P1, Q1, P2, and Q2 are set at the center of the through hole (25) which is 400mm. Among these, in FIG. 35, α Y Set to 65.0 mm, and in Fig. 36, α Y Set to 43.3mm, and in FIG. 37, α Y is set to 21.7 mm. In FIGS. 35 to 37, α X Since α is 400 mm, the value of the right side (threshold of the left side) of Equation (1) becomes 26.7 μm. In FIG. 35, α Y Since α is 65.0 mm, the value of the right side of Equation (2) (the threshold of the left side) becomes 40.0 μm. In FIG. 36, α Y Since α is 43.3 mm, the value of the right side of Equation (2) (threshold of the left side) becomes 26.7 μm, and in FIG. 37, α Y Since α is 21.7 mm, the value of the right side of Equation (2) (the threshold of the left side) becomes 13.3 μm.

[0281] In FIGS. 38 to 40, α X The measurement results and pass / fail judgment results are shown when points P1, Q1, P2, and Q2 are set at the center of the through hole (25) which is 600 mm. Among these, in FIG. 38, α Y Set to 65.0 mm, and in Fig. 39, α Y Set to 43.3mm, and in Fig. 40, α Y is set to 21.7 mm. In FIGS. 38 to 40, α X Since α is 600 mm, the value of the right side (threshold of the left side) of Equation (1) becomes 40.0 μm. In FIG. 38, α Y Since α is 65.0 mm, the value of the right side (threshold of the left side) of Equation (2) becomes 60.0 μm. In FIG. 39, α Y Since α is 43.3 mm, the value of the right side of Equation (2) (threshold of the left side) becomes 40.0 μm, and in FIG. 40, α YSince α is 21.7 mm, the value of the right side of Equation (2) (the threshold of the left side) becomes 20.0 μm.

[0282] In FIGS. 41 to 43, α X The measurement results and pass / fail judgment results are shown when points P1, Q1, P2, and Q2 are set at the center of the through hole (25) which is 800mm. Among these, in FIG. 41, α Y Set to 65.0 mm, and in Fig. 42, α Y Set to 43.3mm, and in Fig. 43, α Y is set to 21.7 mm. In FIGS. 41 to 43, α X Since α is 800 mm, the value of the right side (threshold of the left side) of Equation (1) becomes 53.3 μm. In FIG. 41, α Y Since α is 65.0 mm, the value of the right side (threshold of the left side) of Equation (2) becomes 80.0 μm. In FIG. 42, α Y Since α is 43.3 mm, the value of the right side of Equation (2) (the threshold of the left side) becomes 53.3 μm, and in FIG. 43, α Y Since α is 21.7 mm, the value of the right side of Equation (2) (the threshold of the left side) becomes 26.7 μm.

[0283] In FIGS. 44 to 46, α X The measurement results and pass / fail judgment results are shown when points P1, Q1, P2, and Q2 are set at the center of the through hole (25) which is 900mm. Among these, in FIG. 44, α Y Set to 65.0 mm, and in Fig. 45, α Y Set to 43.3mm, and in Fig. 46, α Y is set to 21.7 mm. In FIGS. 44 to 46, α X Since α is 900 mm, the value of the right side (threshold of the left side) of Equation (1) becomes 60.0 μm. In FIG. 44, α YSince α is 65.0 mm, the value of the right side (threshold of the left side) of Equation (2) becomes 90.0 μm. In FIG. 45, α Y Since α is 43.3 mm, the value of the right side of Equation (2) (threshold of the left side) becomes 60.0 μm, and in FIG. 46, α Y Since α is 21.7 mm, the value of the right side of Equation (2) (the threshold of the left side) becomes 30.0 μm.

[0284] In the cases shown in FIGS. 35 to 46, the same judgment results as in the cases shown in FIGS. 29 to 31 were obtained. That is, each α X Regarding the deposition masks (20) of the first to tenth samples, the 21st sample, the 22nd sample, the 24th sample, and the 25th sample, it was determined that the deposition masks (20) (good products) can improve the positional accuracy of the through holes (25) during installation because they satisfy Equation (1). The deposition masks (20) of the first to sixth samples, the 11th to 16th samples, the 21st sample, and the 23rd sample were determined that the deposition masks (20) (good products) can improve the positional accuracy of the through holes (25) during installation because they satisfy Equation (2). In addition, the deposition masks (20) of the first to sixth samples and the 21st sample were determined that the deposition masks (20) (good products) can further improve the positional accuracy of the through holes (25) during installation because they satisfy Equation (1) and Equation (2). In addition, it was shown that by using at least one of Equation (1) and Equation (2), the result of the pass / fail judgment can be suppressed from being affected by the distance between point P1 and point P2 (distance between point Q1 and point Q2).

[0285] As such, as shown in FIGS. 29 to 46, other α XEven when a pass / fail judgment was made based on the P1, Q1, P2, and Q2 points set as such, the same judgment result was obtained. This indicates that an appropriate pass / fail judgment can be made regardless of the distance between P1 and Q1 (the distance between P2 and Q2). In other words, by using at least one of Equation (1) and Equation (2), it can be said that the pass / fail judgment result can be suppressed from being affected by the distance between P1 and Q1 (the distance between P2 and Q2).

Claims

Claim 1 A method for manufacturing a deposition mask having a plurality of through holes extending in a first direction, a first central axis line extending in the first direction and positioned at a center in a second direction orthogonal to the first direction, points P1 and Q1 provided on one side of the first central axis line and spaced apart from each other along the first direction, and points P2 and Q2 provided on the other side of the first central axis line and spaced apart from each other along the first direction, the method comprising: a process for preparing the deposition mask; a measurement process for measuring a dimension X1 from point P1 to point Q1 and a dimension X2 from point P2 to point Q2; and the dimensions X1 and X2 measured in the measurement process, wherein the design values ​​α of the dimensions X1 and X2 X , the design values ​​of the dimensions from point P1 to point P2 and the dimensions from point Q1 to point Q2 are α Y , the maximum value among the distances between the center points of the two through holes in the second direction is W Y When it was said, and A method for manufacturing a deposition mask comprising a selection process for selecting a deposition mask that satisfies the above conditions, wherein the deposition mask comprises a first and second ear portions constituting a pair of ends in the first direction, and a plurality of effective regions arranged in the first direction, wherein the first and second ear portions are located between the first and second ear portions, and a plurality of effective regions arranged in the first direction, wherein a plurality of through holes are formed in each of the effective regions, wherein the P1 point and the P2 point are positioned at the center point of the through hole formed in the effective region located closest to the first ear portion, and the Q1 point and the Q2 point are positioned at the center point of the through hole formed in the effective region located closest to the second ear portion. Claim 2 A method for manufacturing a deposition mask having a plurality of through holes extending in a first direction, a first central axis line extending in the first direction and positioned at a center in a second direction orthogonal to the first direction, points P1 and Q1 provided on one side of the first central axis line and spaced apart from each other along the first direction, and points P2 and Q2 provided on the other side of the first central axis line and spaced apart from each other along the first direction, the method comprising: a process for preparing the deposition mask; a measurement process for measuring a dimension X1 from point P1 to point Q1 and a dimension X2 from point P2 to point Q2; and the dimensions X1 and X2 measured in the measurement process, wherein the design values ​​α of the dimensions X1 and X2 X , the design values ​​of the dimensions from point P1 to point P2 and the dimensions from point Q1 to point Q2 are α Y , the maximum value among the distances between the center points of the two through holes in the second direction is W Y When it was said, A method for manufacturing a deposition mask comprising a selection process for selecting a deposition mask that satisfies the above, wherein the deposition mask comprises a first ear portion and a second ear portion constituting a pair of ends in the first direction, and a plurality of effective regions arranged in the first direction, wherein the plurality of effective regions are located between the first ear portion and the second ear portion, and wherein a plurality of through holes are formed in each of the effective regions, wherein the P1 point and the P2 point are positioned at the center point of the through hole formed in the effective region located closest to the first ear portion, and the Q1 point and the Q2 point are positioned at the center point of the through hole formed in the effective region located closest to the second ear portion. Claim 3 A method for manufacturing a deposition mask device comprising: a process of preparing the deposition mask by the method for manufacturing the deposition mask described in claim 1 or 2; and a process of applying tension to the deposition mask in the first direction and mounting the deposition mask on a frame.

Images