Quantum Dot Organic Light Emitting Diode Device

Abstract

The present invention relates to a quantum dot organic light-emitting diode device. The quantum dot organic light-emitting diode device of the present invention comprises a structure in which an organic light-emitting element layer, a quantum dot film, and a reflection enhancement film are sequentially stacked. Light in the short wavelength range, including the visible light band emitted from the organic light-emitting element layer, is converted into light in the long wavelength range by the quantum dot film, and the converted light is emitted through the reflection enhancement film. In addition, a portion of the converted light is induced to generate light in the long wavelength range again through the quantum dot film by reflection from the reflection enhancement film, thereby enabling the emission of light in the long wavelength range with amplified intensity through the reflection enhancement film.

Description

Technology Field

[0001] The present invention relates to a quantum dot organic light-emitting diode device, and in particular, to a quantum dot organic light-emitting diode device for application in medical applications, etc., including a reflective enhancement film for improving wavelength purity and output. Background Technology

[0002] The global medical device market is a very large market, valued at approximately $323.8 billion (389 trillion won) as of 2013 (based on an exchange rate of $1 = 1,200 won), and is an industry showing a high average annual growth rate of 6.9% according to statistics from 2009 to 2013. Although Korea does not yet hold a significant position in the global medical device market, it appears advantageous for solidifying its standing if it enters the global market based on digital medical devices and healthcare equipment that utilize products in which domestic companies hold a decisive advantage, such as OLEDs (refer to the Korea Health Industry Development Institute's 2014 Health Industry White Paper).

[0003] In Korea, the phototherapy market accounts for approximately 2-3% of the total medical device market (valued at 140 billion KRW as of 2014). This phototherapy market is largely driven by the laser therapy industry, and among them, the laser illuminator industry was valued at around 37.6 billion KRW in 2014, accounting for about 27% of the laser therapy industry. Considering that the laser illuminator market will ultimately be replaced by LEDs and OLEDs, one can estimate the initial target market size.

[0004] During the early stages of research and development, there was significant skepticism regarding the commercialization of OLED light sources due to the vulnerability of organic semiconductors to atmospheric conditions. However, with the establishment of economic and encapsulation technologies, OLEDs have advanced to the point where they are applied to smartphones, tablets, and premium TVs, demonstrating that concerns regarding practical application are no longer an issue. In particular, given that Korea holds a near-monopolistic technological advantage in the display market—accounting for over 99% of the OLED market share—efforts to expand OLED technology to applications beyond displays are expected to play a crucial role in creating new markets and securing market leadership. The advantages of OLEDs in terms of form factors, such as flexibility, transparency, and planar light sources, offer a high probability of overcoming the problems and limitations of existing LEDs in applications like medical light sources. This is expected to not only provide an unprecedented user experience but also deliver significantly improved performance in terms of uniformity and stability.

[0005] However, despite these advantages of OLEDs, not only is wavelength control difficult, but materials for the NIR (>700nm) wavelength range, which is widely used in medical devices, are virtually non-existent. Therefore, QD-OLEDs, which combine QDs with a color conversion ratio capable of freely controlling wavelengths, are emerging as an alternative. With QD-OLEDs, wavelengths can be freely controlled simply by replacing the QD layer, provided there is an optimized OLED structure. Since QDs inherently allow for wavelength adjustment by controlling their size, new high-performance optical medical devices can be developed based on QD-OLEDs, which enable free control across the entire wavelength range.

[0006] However, QD-OLED has the disadvantage that unwanted light leakage can occur and output is significantly reduced because its characteristic is to convert color by passing OLED light through QDs. The problem to be solved

[0007] Accordingly, the present invention has been devised to solve the aforementioned problems, and the objective of the present invention is to provide a new type of QD-OLED (Quantum Dot Organic Light Emitting Diode) device that solves the above limitations by combining a Reflective Enhancement Film for wavelength purity / output enhancement with the outer surface of the QD-OLED. means of solving the problem

[0008] First, to summarize the features of the present invention, a quantum dot organic light-emitting diode device according to one aspect of the present invention for achieving the above objective comprises a structure in which an organic light-emitting element layer; a quantum dot film; and a reflection enhancement film are sequentially stacked. Light in the short wavelength range, including the visible light band emitted from the organic light-emitting element layer, is converted into light in the long wavelength range by the quantum dot film, and the converted light is emitted through the reflection enhancement film. In this case, a portion of the converted light is induced to generate the long wavelength light again through the quantum dot film by reflection from the reflection enhancement film, thereby enabling the emission of long wavelength light with amplified intensity through the reflection enhancement film.

[0009] The above reflection-enhancing film reflects light in the short wavelength range, including the visible light band, and transmits light in the long wavelength range, thereby increasing the color purity of the light emitted through the reflection-enhancing film and the intensity of the long wavelength range.

[0010] The above reflection-enhancing film can increase the amount of radiant energy emitted as the driving voltage of the organic light-emitting diode layer increases at a greater rate of increase than when the reflection-enhancing film is not present.

[0011] The reflection-enhancing film can increase the rate at which the light is converted in the quantum dot film in accordance with the decrease in the driving voltage of the organic light-emitting diode layer by a greater rate than when the reflection-enhancing film is absent.

[0012] The above long-wavelength light may include infrared light comprising one or more of near-infrared, mid-infrared, or far-infrared.

[0013] It is preferable that the above quantum dot film be formed with a thickness of 100 nm to 1 mm.

[0014] The above quantum dot film may include: a barrier film for protecting a quantum dot layer; the quantum dot layer having a plurality of quantum dots for converting light formed on the barrier film; and a barrier layer formed on the quantum dot layer by electrospinning or electrospinning.

[0015] The above-described reflection-enhancing film protects the organic light-emitting diode layer and the quantum dot film by preventing moisture and oxygen from penetrating them, and includes a structure in which a first thin film and a second thin film with different refractive indices are alternately stacked multiple times to prevent the transmission of light in the short wavelength range, including the visible light band, thereby having gas barrier and selective light transmittance.

[0016] It is preferable that the first thin film and the second thin film each have a thickness of 5 to 150 nm.

[0017] It is preferable that the difference in refractive index between the first thin film and the second thin film is at least 0.3.

[0018] Each of the first thin film and the second thin film may be formed as a single layer by selecting one or more films from aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon oxynitride, magnesium oxide, magnesium fluoride, titanium oxide, titanium nitride, hafnium oxide, hafnium nitride, zirconium oxide, zirconium nitride, tungsten oxide, zinc sulfide, zinc oxide, tin oxide, and yttrium oxide, or may be a multilayer ultrathin film structure formed by alternately stacking two or more films to a thickness of several nanometers. Effects of the invention

[0019] According to the quantum dot organic light-emitting diode device of the present invention, a reflective enhancement film for improving wavelength purity and output is combined with the outer edge of the QD-OLED. This causes blue light leakage—comparable to conventional devices—to be reflected back, and induces the amplification of light such as red through the QDs that reabsorb the reflected light. Consequently, when applied to medical applications, the device combines a QD-OLED with a reflective enhancement film that allows for free wavelength control, thereby increasing color purity and amplifying light intensity. In other words, the present invention secures NIR (Near Infrared Radiation) wavelengths and free wavelength control effects, which are difficult to achieve with conventional organic light-emitting diode-based medical devices. Simultaneously, it resolves the light leakage phenomenon at specific wavelengths, which is a limitation of conventional quantum dot organic light-emitting diodes, and ensures high output performance, thereby enabling improved performance when applied to optical-based medical devices. Brief explanation of the drawing

[0020] The accompanying drawings, included as part of the detailed description to aid in understanding the present invention, provide embodiments of the present invention and explain the technical concept of the present invention together with the detailed description. FIG. 1a is a schematic cross-sectional view of a front-emitting OLED structure to be applied to the present invention. FIG. 1b is a schematic cross-sectional view of a back-emitting OLED structure to be applied to the present invention. FIG. 2 is a drawing for explaining a quantum dot organic light-emitting diode device according to one embodiment of the present invention. Figure 3 is a diagram illustrating the structure of the quantum dot film of Figure 2. Figure 4 is a diagram illustrating the structure of the reflection-enhancing film of Figure 2. Figure 5 is a graph of transmittance with respect to wavelength in the reflection-enhancing film of the present invention. Figure 6 is an intensity graph of the wavelength of light transmitted when there is no reflection-enhancing film of the present invention. Figure 7 is an intensity graph with respect to the wavelength of light transmitted when the reflection-enhancing film of the present invention is applied. Figure 8 is a graph comparing the magnitude of radiant energy with respect to the driving voltage of an organic light-emitting diode layer depending on the presence or absence of the reflection-enhancing film of the present invention. Figure 9 is a comparison graph of the light conversion ratio with respect to the driving voltage of the organic light-emitting diode layer depending on the presence or absence of the reflection-enhancing film of the present invention. Specific details for implementing the invention

[0021] The present invention will be described in detail below with reference to the attached drawings. In this case, identical components in each drawing are denoted by the same reference numeral whenever possible. Furthermore, detailed descriptions of already known functions and / or configurations are omitted. The content disclosed below focuses on the parts necessary for understanding the operation according to various embodiments, and descriptions of elements that may obscure the gist of the explanation are omitted. Additionally, some components in the drawings may be exaggerated, omitted, or schematically depicted. The size of each component does not entirely reflect its actual size, and therefore, the contents described herein are not limited by the relative sizes or spacing of the components depicted in each drawing.

[0022] In describing the embodiments of the present invention, detailed descriptions of known technologies related to the present invention are omitted if it is determined that such detailed descriptions may unnecessarily obscure the essence of the invention. Furthermore, the terms described below are defined in consideration of their functions within the present invention, and these may vary depending on the intentions or practices of the user or operator. Therefore, such definitions should be based on the content throughout this specification. Terms used in the detailed description are intended merely to describe the embodiments of the present invention and should not be limiting in any way. Unless explicitly stated otherwise, expressions in the singular form include the meaning of the plural form. In this description, expressions such as "include" or "comprise" are intended to refer to certain characteristics, numbers, steps, actions, elements, parts thereof, or combinations thereof, and should not be interpreted to exclude the existence or possibility of one or more other characteristics, numbers, steps, actions, elements, parts thereof, or combinations thereof other than those described.

[0023] Additionally, terms such as first, second, etc., may be used to describe various components, but said components are not limited by said terms, and said terms are used only for the purpose of distinguishing one component from another.

[0024] FIG. 1a is a schematic cross-sectional view of a front-emitting OLED structure to be applied to the present invention.

[0025] Referring to FIG. 1a, a front-emitting OLED structure (10, 20, 30) comprises a first insulating layer (10), such as a sealing film, an organic light-emitting layer (20), and a second insulating layer (30), such as a sealing film. The organic light-emitting layer (20) comprises an anode electrode layer, a cathode electrode layer, an organic material layer formed between them, and a TFT (Thin Film Transistor) layer. Depending on a signal provided through the TFT, light can be generated by the recombination of holes and electrons injected between the anode and the cathode in the organic material layer between the anode electrode layer and the cathode electrode layer. In the front-emitting type, since the light from the organic light-emitting layer (20) is emitted to the front of the TFT layer, the cathode electrode layer is made of a transparent electrode.

[0026] FIG. 1b is a schematic cross-sectional view of a back-emitting OLED structure to be applied to the present invention.

[0027] Referring to FIG. 1b, the back-emitting type OLED structure (10, 20, 30) includes a first insulating layer (10), such as a sealing film, an organic light-emitting layer (20), and a second insulating layer (30), such as a sealing film. The organic light-emitting layer (20) includes an anode electrode layer, a cathode electrode layer, an organic material layer formed between them, and a TFT (Thin Film Transistor) layer. In accordance with a signal provided through the TFT, light can be generated by the recombination of holes and electrons injected between the anode and the cathode in the organic material layer between the anode electrode layer and the cathode electrode layer. In the back-emitting type, light from the organic light-emitting layer (20) is emitted to the back of the TFT layer. Therefore, the cathode electrode layer is made of a metal electrode that reflects light, and the anode electrode layer and the TFT layer are designed with a minimum area to maximize the aperture ratio from which light is emitted.

[0028] In the front-emitting type OLED structure of FIG. 1a and the back-emitting type OLED structure of FIG. 1b, the organic layer of the organic light-emitting layer (20) includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, etc.

[0029] As the front-emitting OLED structure of FIG. 1a and the back-emitting OLED structure of FIG. 1b are well known, a detailed description of their structure and operation is omitted here.

[0030] FIG. 2 is a drawing for explaining a quantum dot organic light-emitting diode device (100) according to one embodiment of the present invention.

[0031] Referring to FIG. 2, a quantum dot organic light-emitting diode device (100) according to one embodiment of the present invention includes a structure in which an organic light-emitting diode layer (110), a quantum dot film (120), and a reflection-enhancing film (130) are sequentially stacked.

[0032] As the organic light-emitting element layer (110), either the front-emitting type OLED structure of FIG. 1a or the back-emitting type OLED structure of FIG. 1b may be applied. However, light emitted from the organic light-emitting element layer (110), that is, light in the short wavelength range including the visible light band, may be configured to be emitted by passing through the quantum dot film (120) and the reflection enhancement film (130).

[0033] In the quantum dot organic light-emitting diode device (100) of the present invention, a reflection enhancement film (130) for improving wavelength purity / output is combined with the outer surface of a QD-OLED structure comprising an organic light-emitting diode layer (110) and a quantum dot film (120). This allows blue light leakage, which is common in the past, to be reflected back toward the quantum dot film (120), and enables light such as red to be amplified through the quantum dots (QDs) of the quantum dot film (120) that reabsorb the reflected light. Accordingly, when applied for medical use, the light intensity can be amplified while increasing color purity in a combined form of a QD-OLED with free wavelength control and a reflection enhancement film (130). In other words, the present invention secures NIR (Near Infrared Radiation) wavelengths and enables free wavelength control effects, which are difficult to achieve with existing organic light-emitting diode-based medical devices; at the same time, it resolves the light leakage phenomenon at specific wavelengths, which is a limitation of existing quantum dot organic light-emitting diodes, and secures high output performance, thereby allowing for the expectation of performance improvement when applied to light-based medical devices.

[0034] To this end, in the quantum dot organic light-emitting diode device (100) of the present invention, light in the short wavelength range including the visible light band emitted from the organic light-emitting diode layer (110) is converted into light in the long wavelength range, such as infrared wavelengths, through a quantum dot film (120), and the converted light is emitted through a reflection enhancement film (130). In this case, a portion of the light converted in the quantum dot film (120) is reflected by the reflection enhancement film (130), thereby inducing the generation of light in the long wavelength range, such as infrared wavelengths, again through the quantum dot film (120). Thus, it is possible to emit light in the long wavelength range with amplified intensity through the reflection enhancement film (130).

[0035] Figure 3 is a diagram for explaining the structure of the quantum dot film (120) of Figure 2.

[0036] Referring to FIG. 3, the quantum dot film (120) may include a barrier film (121) for protecting the quantum dot layer, a quantum dot layer (122) having a plurality of quantum dots (10) formed on the barrier film (121) for converting light, and a barrier layer (123) formed on the quantum dot layer (122) by electrospinning or electroradiating. The quantum dot film (120) may be formed with a total thickness of 100 nm to 1 mm.

[0037] For example, the barrier film (121) may be composed of a prism film body having a prism layer that collects dispersed light and improves brightness.

[0038] Additionally, the quantum dot layer (122) may be formed on a barrier film (121) by electrospinning or electrospinning, and may be in the form of a polymer resin layer such as PS (Polystyrene), EPS (Expandable Polystyrene), or PVC (Polyvinyl Chloride) containing quantum dots (11). A quantum dot (10) is a particle in which a nano-sized II-IV semiconductor particle forms a core. The fluorescence of such a quantum dot (10) is light generated as an electron in an excited state descends from the conduction band to the valence band. Such a quantum dot layer (122) may include quantum dots (10) that exhibit one or more colors selected from a group consisting of red light, green light, blue light, yellow light, etc. When the light emitted from the organic light-emitting diode layer (110) is blue, a quantum dot (10) that exhibits red (R) and green (G) colors can be selected and used, and in particular, can be selected to emit electromagnetic waves of about 700 nm to 1 mm (hundreds of μm) in a long wavelength range including infrared, that is, near infrared, mid infrared, and far infrared.

[0039] Additionally, the barrier layer (123) can be formed on the quantum dot layer (122) by electrospinning or electrospinning.

[0040] Here, the quantum dot film (120) has been described as an example, and it is noted that various implementations of the quantum dot layer (122) containing various quantum dots are possible.

[0041] Figure 4 is a drawing for explaining the structure of the reflection-enhancing film (130) of Figure 2.

[0042] Referring to FIG. 4, the reflection-enhancing film (130) comprises a structure in which a first thin film (131) and a second thin film (131) with different refractive indices are alternately stacked multiple times. For example, the first thin film (131) may be a high-refractive-index thin film and the second thin film (131) may be a low-refractive-index thin film. The first thin film (131) and the second thin film (131) may each be formed with a thickness of 5 to 150 nm, and the difference in refractive index between the first thin film (131) and the second thin film (131) may be at least 0.3.

[0043] The reflection-enhancing film (130) protects the organic light-emitting diode layer (110) and the quantum dot film (120) by preventing moisture and oxygen from penetrating them, and prevents the transmission of short-wavelength light including the visible light band. The reflection-enhancing film (130) thus has selective light transmittance and can function as a gas barrier that effectively discharges carbon dioxide and blocks external air.

[0044] FIG. 5 is a graph of transmittance with respect to wavelength in the reflection-enhancing film (130) of the present invention.

[0045] As shown in FIG. 5, some of the visible light bands, for example, short wavelengths of 380 to 560 nm including the visible light band, may not be transmitted in the reflection-enhancing film (130), and the relatively long wavelengths of 600 nm to 1 mm (hundreds of μm) or longer, i.e., wavelengths including infrared light, may be transmitted. Here, the wavelengths of light that are not transmitted may be selected from various wavelength ranges depending on the design purpose, i.e., the medical purpose.

[0046] Each of the first thin film (131) and the second thin film (131) of the reflection-enhancing film (130) may be formed as a single layer (thickness of several nanometers to tens of nanometers) by selecting one or more films from aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon oxynitride, magnesium oxide, magnesium fluoride, titanium oxide, titanium nitride, hafnium oxide, hafnium nitride, zirconium oxide, zirconium nitride, tungsten oxide, zinc sulfide, zinc oxide, tin oxide, and yttrium oxide, or may be formed as a multilayer ultrathin film multilayer structure in which two or more films are alternately stacked to a thickness of several nanometers.

[0047] FIG. 6 is a graph of the intensity of the wavelength of light transmitted when the reflection-enhancing film (130) of the present invention is not present. FIG. 6 shows the intensity of the wavelength of light transmitted according to the driving voltage applied to the anode and cathode of the organic light-emitting diode layer (110).

[0048] As shown in FIG. 6, when a general brightness enhancement film or a general reflection film is used instead of the reflection enhancement film (130) of the present invention, only light in the desired long wavelength range (e.g., wavelength 650 nm peak, etc.) is transmitted, and other unwanted light in the visible light band (e.g., wavelength 450~550 nm, etc.) may also be transmitted.

[0049] FIG. 7 is a graph of the intensity of the wavelength of light transmitted when the reflection-enhancing film (130) of the present invention is applied. FIG. 7 shows the intensity of the wavelength of light transmitted according to the driving voltage applied to the anode and cathode of the organic light-emitting diode layer (110).

[0050] As shown in FIG. 7, when the reflection-enhancing film (130) of the present invention is applied, the reflection-enhancing film (130) reflects light in the short wavelength range including the visible light band and transmits light in the long wavelength range such as infrared wavelengths (Fig. 5), thereby increasing the color purity of the light emitted through the reflection-enhancing film (130) and the intensity of the long wavelength range such as infrared wavelengths.

[0051] FIG. 8 is a graph comparing the magnitude of radiant energy with respect to the driving voltage (anode-cathode voltage) of the organic light-emitting diode layer (110) depending on the presence or absence of the reflection-enhancing film (130) of the present invention.

[0052] As shown in FIG. 8, the amount of radiant emittance emitted by the reflection enhancement film (130) can be increased at a greater rate than when the reflection enhancement film (130) is not present as the driving voltage of the organic light-emitting diode layer (110) increases. For example, at a driving voltage of 6.25V, the amount of radiant emittance emitted increased by 33% compared to when the reflection enhancement film (130) is not present.

[0053] FIG. 9 is a comparison graph of the light conversion ratio with respect to the driving voltage (anode-cathode voltage) of the organic light-emitting diode layer (110) depending on the presence or absence of the reflection-enhancing film (130) of the present invention.

[0054] As shown in FIG. 9, the reflection enhancement film (130) can increase the rate of light conversion in the quantum dot film (120) as the driving voltage of the organic light-emitting diode layer (110) decreases, at a greater rate than when the reflection enhancement film (130) is not present. For example, at a driving voltage of 3.25V, the rate of light conversion in the quantum dot film (120) increased by 89.9% compared to when the reflection enhancement film (130) is not present.

[0055] The QD-OLED-based quantum dot organic light-emitting diode device (100) of the present invention can be used for the treatment of neurological diseases and skin diseases, etc.

[0056] For example, the QD-OLED-based quantum dot organic light-emitting diode device (100) of the present invention can be applied for the treatment of intractable neurological diseases (dementia / depression / insomnia, etc.) through light stimulation. In animal models of Alzheimer's disease (AD), attenuation of gamma waves is associated with the early onset of dementia, and, for example, an increase in the intensity of gamma waves through light stimulation of 40 Hz, amyloid beta (amyloid It has been reported that there are effects of reducing protein accumulation and improving cognitive decline. In particular, it has been found that the improvement in effect is greater as the wavelength increases, which is difficult to achieve with a standard OLED, but the QD-OLED-based quantum dot organic light-emitting diode device (100) of the present invention is expected to exhibit a greater effect when designed to output a wavelength of 700 nm or more. In addition, light therapy involving periodic exposure to bright light is effective in treating well syndrome. It has been reported that exposure to 10,000 lux of white light for 30 minutes every morning reduced depression in patients with severe well syndrome, and that the effect is even greater when antidepressants are taken together with light therapy.

[0057] Furthermore, the QD-OLED-based quantum dot organic light-emitting diode device (100) of the present invention can be applied for the treatment of intractable skin diseases (skin cancer, atopic dermatitis, psoriasis, etc.) through light stimulation. For example, it has been reported that light stimulation of NIR wavelengths not only improves intractable skin diseases by activating cytochrome C oxidase to promote cell regeneration, but also enables selective treatment of skin cancer by forming reactive oxygen species (ROS) through combination with a photosensitizer. Therefore, it is possible to reduce drug use and drastically reduce side effects caused by drug overuse. In particular, synergistic effects such as pain relief can be expected through the QD-OLED of the present invention, which is 700nm or larger and which conventional OLEDs could not achieve.

[0058] As described above, in the quantum dot organic light-emitting diode device (100) according to the present invention, a reflection enhancement film (130) for improving wavelength purity / output is combined with the outer surface of a QD-OLED structure comprising an organic light-emitting diode layer (110) and a quantum dot film (120). This allows blue light leakage, as in conventional methods, to be reflected back toward the quantum dot film (120), and enables light such as red to be amplified through the quantum dots (QDs) of the quantum dot film (120) that reabsorb the reflected light. Accordingly, when applied for medical use, the light intensity can be amplified while increasing color purity in a combined form of a QD-OLED with free wavelength control and a reflection enhancement film (130). In other words, the present invention secures NIR (Near Infrared Radiation) wavelengths and enables free wavelength control effects, which are difficult to achieve with existing organic light-emitting diode-based medical devices; at the same time, it resolves the light leakage phenomenon at specific wavelengths, which is a limitation of existing quantum dot organic light-emitting diodes, and secures high output performance, thereby allowing for the expectation of performance improvement when applied to light-based medical devices.

[0059] As described above, the present invention has been explained by specific details such as specific components, limited embodiments, and drawings; however, this is provided merely to aid in a more comprehensive understanding of the invention, and the invention is not limited to the above embodiments. A person skilled in the art to which the invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the invention. Accordingly, the concept of the present invention should not be limited to the described embodiments, and all technical concepts that are equivalent to or have equivalent variations to the claims set forth below, as well as the claims themselves, should be interpreted as being included within the scope of the rights of the present invention. Explanation of the symbols

[0060] Organic light-emitting diode layer (110) quantum dot film (120) Reflection-enhancing film (130) barrier film (121) quantum dot layer (122) barrier layer (123) First thin film (131) second thin film (131)

Claims

Claim 1 Organic light-emitting diode layer; quantum dot film; The structure comprises a structure in which a reflection-enhancing film is sequentially laminated, wherein short-wavelength light including the visible light band emitted from the organic light-emitting diode layer is converted by the quantum dot film into long-wavelength light including medical infrared having a wavelength longer than the short-wavelength band, and the converted light is emitted through the reflection-enhancing film, wherein the short-wavelength light including the visible light band among the converted light is reflected by the reflection-enhancing film to induce the generation of long-wavelength light including medical infrared again through the quantum dot film, thereby increasing the color purity of the medical infrared light emitted through the reflection-enhancing film and emitting long-wavelength light with amplified intensity through the reflection-enhancing film, wherein the quantum dot film comprises a prism film body having a prism layer that collects dispersed light to improve brightness, and the thickness of the quantum dot film is formed to be 100 nm to 1 mm, and the reflection-enhancing film has a gas barrier to protect by preventing the penetration of moisture and oxygen into the organic light-emitting diode layer and the quantum dot film, and the visible light band The structure comprises a first thin film and a second thin film having different refractive indices that are alternately stacked multiple times to prevent the transmission of light in the short wavelength range, wherein the first thin film and the second thin film each have a thickness of 5 to 150 nm, and the difference in refractive index between the first thin film and the second thin film is at least 0.3 or more, wherein each of the first thin film and the second thin film is formed as a single layer by selecting one or more films from aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon oxynitride, magnesium oxide, magnesium fluoride, titanium oxide, titanium nitride, hafnium oxide, hafnium nitride, zirconium oxide, zirconium nitride, tungsten oxide, zinc sulfide, zinc oxide, tin oxide, and yttrium oxide, or has a structure in which two or more are alternately stacked, and the quantum dot film is a barrier film for protecting the quantum dot layer, comprising: the barrier film including the prism film body; the quantum dot layer having a plurality of quantum dots for the conversion of light formed on the barrier film; A quantum dot organic light-emitting diode device comprising a barrier layer formed on the quantum dot layer by electrospinning or electroradiation, wherein the reflection enhancement film increases the amount of radiant energy emitted as the driving voltage of the organic light-emitting diode layer increases at a greater rate of increase than when the reflection enhancement film is absent, and the reflection enhancement film increases the rate at which the light conversion in the quantum dot film occurs as the driving voltage of the organic light-emitting diode layer decreases at a greater rate of increase than when the reflection enhancement film is absent. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 In claim 1, the long-wavelength light is a quantum dot organic light-emitting diode device containing infrared light including one or more of near-infrared, mid-infrared, or far-infrared. Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 delete Claim 11 delete

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