Display device and tiled display device including the same

Abstract

A display device is provided. The display device comprises a substrate including a plurality of light-emitting regions and a plurality of light-blocking regions surrounding each of the plurality of light-emitting regions; a thin-film transistor layer including a thin-film transistor disposed on the substrate and a connection wiring connected to the thin-film transistor; a light-emitting element layer including a plurality of light-emitting elements disposed on the thin-film transistor layer and corresponding to each of the plurality of light-emitting regions; an encapsulation layer covering the light-emitting element layer; and a pad portion disposed on the encapsulation layer and contacting the connection wiring through a contact hole provided in the encapsulation layer.

Description

Technology Field

[0001] The present invention relates to a display device and a tile-type display device including the same. Background Technology

[0002] As the information society develops, the demand for display devices for displaying images is increasing in various forms. For example, display devices are being applied to a wide range of electronic devices, such as smartphones, digital cameras, laptop computers, navigation systems, and smart televisions. Display devices may be flat panel display devices, such as Liquid Crystal Display Devices, Field Emission Display Devices, and Organic Light Emitting Display Devices. Among these flat panel display devices, light-emitting display devices include light-emitting elements in which each pixel of the display panel can emit light independently, thereby enabling the display of images without a backlight unit that provides light to the display panel.

[0003] When manufacturing display devices in large sizes, the increase in the number of pixels can lead to an increase in the defect rate of light-emitting elements and a decrease in productivity or reliability. To address this, a tile-type display can realize a large screen by connecting multiple display devices that are relatively small in size. A tile-type display may include boundary areas called seams between multiple display devices due to the non-display areas or bezel areas of each of the adjacent display devices. When a single image is displayed across the entire screen, these boundary areas create a sense of discontinuity, thereby reducing the immersion of the image. The problem to be solved

[0004] The problem that the present invention aims to solve is to provide a tile-type display device that can eliminate the sense of disconnection between multiple display devices and enhance image immersion by preventing the perception of boundary portions or non-display areas between multiple display devices.

[0005] The problems of the present invention are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0006] A display device according to one embodiment for solving the above problem comprises: a substrate including a plurality of light-emitting regions and a plurality of light-blocking regions surrounding each of the plurality of light-emitting regions; a thin-film transistor layer including a thin-film transistor disposed on the substrate and a connection wiring connected to the thin-film transistor; a light-emitting element layer including a plurality of light-emitting elements disposed on the thin-film transistor layer and corresponding to each of the plurality of light-emitting regions; an encapsulation layer covering the light-emitting element layer; and a pad portion disposed on the encapsulation layer and contacting the connection wiring through a contact hole provided in the encapsulation layer.

[0007] The thin film transistor layer further includes a connecting electrode disposed on the thin film transistor to connect the first electrode of the thin film transistor and the light-emitting element, and the connecting wiring may be disposed on the same layer as the connecting electrode.

[0008] The above connection wiring can be placed on the same layer as the gate electrode of the thin-film transistor.

[0010] The above pad portion or the above connecting wiring may overlap with the plurality of light-shielding areas.

[0011] The above display device may further include a metal layer disposed on the encapsulation layer and spaced apart from the pad portion.

[0012] The metal layer above may be made of the same material as the pad portion.

[0013] The above display device may further include a protective film covering the metal layer and a flexible film disposed on the pad portion and connected to the pad portion.

[0014] Each of the above plurality of light-emitting elements may include a first electrode disposed on the thin-film transistor layer and connected to the thin-film transistor, a second electrode disposed on the thin-film transistor layer spaced apart from the first electrode, and a light-emitting diode disposed spaced apart between the first electrode and the second electrode.

[0015] The light-emitting element layer may further include a first contact electrode that covers one end of the light-emitting diode and the first electrode to connect the light-emitting diode and the first electrode, and a second contact electrode that covers the other end of the light-emitting diode and the second electrode to connect the light-emitting diode and the second electrode.

[0016] The light-emitting element layer further comprises a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode, and a reflective member covering the protective layer and reflecting light emitted from the light-emitting diode toward the substrate, wherein the reflective members of each of the plurality of light-emitting regions may be spaced apart from each other.

[0017] The above encapsulation layer can cover the upper surface and side of the reflective member and a part of the thin-film transistor layer.

[0018] The light-emitting element layer may further include a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode, and a reflective member covering the protective layer and the thin-film transistor layer and reflecting light emitted from the light-emitting diode toward the substrate.

[0019] A tile-type display device according to one embodiment for solving the above problem comprises a plurality of display devices including a display area having a plurality of pixels and a non-display area surrounding the display area, and a coupling member for combining the plurality of display devices, wherein each of the plurality of display devices comprises a substrate including a plurality of light-emitting areas which are part of the display area and a plurality of light-blocking areas surrounding each of the plurality of light-emitting areas as another part of the display area, a thin-film transistor layer including a thin-film transistor disposed on the substrate and a connection wiring connected to the thin-film transistor, a light-emitting element layer including a plurality of light-emitting elements disposed on the thin-film transistor layer and corresponding to each of the plurality of light-emitting areas, an encapsulation layer covering the light-emitting element layer, and a pad portion disposed on the encapsulation layer and contacting the connection wiring through a contact hole provided in the encapsulation layer.

[0020] The thin film transistor layer further includes a connecting electrode disposed on the thin film transistor to connect the first electrode of the thin film transistor and the light-emitting element, and the connecting wiring may be disposed on the same layer as the connecting electrode.

[0021] The above connection wiring can be placed on the same layer as the gate electrode of the thin-film transistor.

[0022] The above pad portion or the above connection wiring may overlap with the above non-display area or the above plurality of light-blocking areas.

[0023] Each of the above plurality of display devices may further include a metal layer disposed on the encapsulation layer and spaced apart from the pad portion.

[0024] Each of the above plurality of display devices may further include a protective film covering the metal layer and a flexible film disposed on the pad portion and connected to the pad portion.

[0025] Each of the plurality of light-emitting elements comprises a first electrode, a second electrode spaced apart from the first electrode, and a light-emitting diode spaced apart between the first electrode and the second electrode, and the light-emitting element layer may further comprise a first contact electrode connecting the light-emitting diode and the first electrode, and a second contact electrode connecting the light-emitting diode and the second electrode.

[0026] The light-emitting element layer may further include a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode, and a reflective member covering the protective layer and reflecting light emitted from the light-emitting diode toward the substrate.

[0027] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0028] According to the display device and the tile-type display device including the same according to the embodiments, light emitted from the light-emitting element layer can be emitted forward through the substrate by being reflected by a reflective member. The pad portion can be disposed at the edge of the display device on the encapsulation layer. Each of the plurality of display devices includes a pad portion disposed at the rear, thereby minimizing the area of ​​the non-display region of the display device. Accordingly, the tile-type display device can prevent a user from perceiving the non-display region or boundary portion between the plurality of display devices by minimizing the spacing between the plurality of display devices.

[0029] The effects according to the embodiments are not limited to those exemplified above, and a wider variety of effects are included in this specification. Brief explanation of the drawing

[0030] FIG. 1 is a plan view showing a tile-type display device according to one embodiment. FIG. 2 is a plan view showing a display device according to one embodiment. Figure 3 is a cross-sectional view taken along the cutting line I-I' of Figure 2. Figure 4 is an enlarged view of area A1 in Figure 3. FIG. 5 is a drawing showing a light-emitting element according to one embodiment. FIG. 6 is a plan view showing the combined structure of a tile-type display device according to one embodiment. Figure 7 is a cross-sectional view of one example cut along the cutting line II-II' of Figure 6. Figure 8 is a cross-sectional view of another example cut along the cutting line II-II' of Figure 6. Figure 9 is a cross-sectional view of another example cut along the cutting line II-II' of Figure 6. FIGS. 10 to 18 are cross-sectional views illustrating the manufacturing process of a display device according to one embodiment. Specific details for implementing the invention

[0031] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0032] When elements or layers are referred to as being "on" another element or layer, this includes cases where another layer or element is interposed directly on or in the middle of another element. Throughout the specification, the same reference numerals refer to the same components. Shapes, sizes, ratios, angles, numbers, etc., disclosed in the drawings for describing embodiments are exemplary and therefore the invention is not limited to the depicted details.

[0033] Although terms such as "first," "second," etc., are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be the second component within the technical scope of the present invention.

[0034] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or may be implemented together in an associated relationship.

[0035] Specific embodiments will be described below with reference to the attached drawings.

[0036] FIG. 1 is a plan view showing a tile-type display device according to one embodiment.

[0037] Referring to FIG. 1, a tile-type display device (TD) may include a plurality of display devices (10). The plurality of display devices (10) may be arranged in a grid pattern, but are not limited thereto. The plurality of display devices (10) may be connected in a first direction (X-axis direction) or a second direction (Y-axis direction), and the tile-type display device (TD) may have a specific shape. For example, each of the plurality of display devices (10) may have the same size as each other, but is not limited thereto. As another example, the plurality of display devices (10) may have different sizes.

[0038] Each of the plurality of display devices (10) may have a rectangular shape including a long side and a short side. The plurality of display devices (10) may be arranged such that their long sides or short sides are connected to one another. Some of the display devices (10) may be placed at the edges of the tile-type display device (TD) to form one side of the tile-type display device (TD). Other of the display devices (10) may be placed at the corners of the tile-type display device (TD) to form two adjacent sides of the tile-type display device (TD). Still other of the display devices (10) may be placed inside the tile-type display device (TD) and surrounded by other display devices (10).

[0039] Each of the plurality of display devices (10) may include a display area (DA) and a non-display area (NDA). The display area (DA) may include a plurality of pixels to display an image. The non-display area (NDA) may be placed around the display area (DA) to surround the display area (DA) and may not display an image.

[0040] The tile-type display device (TD) may have a planar shape overall, but is not limited thereto. The tile-type display device (TD) may have a three-dimensional shape to provide a sense of three-dimensionality to the user. For example, when the tile-type display device (TD) has a three-dimensional shape, at least some of the display devices (10) among the plurality of display devices (10) may have a curved shape. As another example, the tile-type display device (TD) may have a three-dimensional shape by each of the plurality of display devices (10) having a planar shape and being connected to each other at a predetermined angle.

[0041] A tile-type display device (TD) can be formed by connecting the non-display areas (NDA) of each adjacent display device (10). Multiple display devices (10) can be connected to each other through a connecting member or an adhesive member. Thus, the non-display areas (NDA) between multiple display devices (10) can be surrounded by adjacent display areas (DA). The distance between the display areas (DA) of each of the multiple display devices (10) can be close enough that the non-display areas (NDA) between the multiple display devices (10) or the boundary portions between the multiple display devices (10) are not perceived by the user. Additionally, the external light reflectance of the display area (DA) of each of the multiple display devices (10) and the external light reflectance of the non-display areas (NDA) between the multiple display devices (10) can be substantially the same. Therefore, the tile-type display device (TD) can eliminate the sense of disconnection between the multiple display devices (10) and improve the immersion of the image by preventing the non-display areas (NDA) or boundary portions between the multiple display devices (10) from being perceived.

[0042] FIG. 2 is a plan view showing a display device according to one embodiment.

[0043] Referring to FIG. 2, the display device (10) may include a plurality of pixels arranged along a plurality of rows and columns in a display area (DA). Each of the plurality of pixels may include a light-emitting region (LA) defined by a pixel defining film, and may emit light having a predetermined peak wavelength through the light-emitting region (LA). For example, the display area (DA) of the display device (10) may include first to third light-emitting regions (LA1, LA2, LA3). Each of the first to third light-emitting regions (LA1, LA2, LA3) may be a region where light generated from a light-emitting element of the display device (10) is emitted to the outside of the display device (10).

[0044] The first to third light-emitting regions (LA1, LA2, LA3) can emit light having a predetermined peak wavelength to the outside of the display device (10). The first light-emitting region (LA1) can emit light of a first color, the second light-emitting region (LA2) can emit light of a second color, and the third light-emitting region (LA3) can emit light of a third color. For example, the first color light may be red light having a peak wavelength in the range of 610 nm to 650 nm, the second color light may be green light having a peak wavelength in the range of 510 nm to 550 nm, and the third color light may be blue light having a peak wavelength in the range of 440 nm to 480 nm, but is not limited thereto.

[0045] The first to third light-emitting regions (LA1, LA2, LA3) may be sequentially and repeatedly arranged along the first direction (X-axis direction) of the display region (DA). For example, the width of the first direction (X-axis direction) of the first light-emitting region (LA1) may be wider than the width of the first direction of the second light-emitting region (LA2), and the width of the first direction of the second light-emitting region (LA2) may be wider than the width of the first direction of the third light-emitting region (LA3). As another example, the width of the first direction (X-axis direction) of the first light-emitting region (LA1), the width of the first direction of the second light-emitting region (LA2), and the width of the first direction of the third light-emitting region (LA3) may be substantially the same.

[0046] For example, the area of ​​the first light-emitting region (LA1) may be larger than the area of ​​the second light-emitting region (LA2), and the area of ​​the second light-emitting region (LA2) may be larger than the area of ​​the third light-emitting region (LA3). As another example, the area of ​​the first light-emitting region (LA1), the area of ​​the second light-emitting region (LA2), and the area of ​​the third light-emitting region (LA3) may be substantially the same.

[0047] A display area (DA) of a display device (10) may include a plurality of light-blocking areas (BA) surrounding a plurality of light-emitting areas (LA). For example, the display area (DA) may include first to third light-blocking areas (BA1, BA2, BA3). Each of the first to third light-blocking areas (BA1, BA2, BA3) may be disposed on one side of each of the first to third light-emitting areas (LA1, LA2, LA3) and may prevent the mixing of light emitted from the first to third light-emitting areas (LA1, LA2, LA3).

[0048] Figure 3 is a cross-sectional view taken along the cutting line I-I' of Figure 2, and Figure 4 is an enlarged view of area A1 of Figure 3.

[0049] Referring to FIGS. 3 and 4, the display area (DA) of the display device (10) may include first to third light-emitting areas (LA1, LA2, LA3). Each of the first to third light-emitting areas (LA1, LA2, LA3) may be an area where light generated from a light-emitting diode (ED) of the display device (10) is emitted to the outside of the display device (10).

[0050] The display device (10) may include a substrate (SUB), a color filter layer (CFL), a wavelength conversion layer (WLCL), a thin film transistor layer (TFTL), a light-emitting element layer (EML), an encapsulation layer (TFE), a metal layer (HRL), and a protective film (PF).

[0051] The substrate (SUB) may be a base substrate or a base member and may be made of an insulating material such as a polymer resin. For example, the substrate (SUB) may be a flexible substrate capable of bending, folding, rolling, etc. The substrate (SUB) may include polyimide (PI), but is not limited thereto.

[0052] The color filter layer (CFL) may include a first light-blocking member (BK1), first to third color filters (CF1, CF2, CF3), and a first flattening layer (OC1).

[0053] The first light-blocking member (BK1) may be placed on the substrate (SUB) in the first to third light-blocking regions (BA1, BA2, BA3). The first light-blocking member (BK1) may overlap with the second light-blocking member (BK2) in the thickness direction. The first light-blocking member (BK1) can block the transmission of light. The first light-blocking member (BK1) can improve color reproduction by preventing light from interfering and mixing between the first to third light-emitting regions (LA1, LA2, LA3). The first light-blocking member (BK1) may be arranged in a grid shape surrounding the first to third light-emitting regions (LA1, LA2, LA3) on a plane.

[0054] A first color filter (CF1) may be placed in a first light-emitting region (LA1) on a substrate (SUB). The first color filter (CF1) may be surrounded by a first light-blocking member (BK1). The first color filter (CF1) may overlap with a first wavelength conversion unit (WLC1) in the thickness direction. The first color filter (CF1) may selectively transmit light of a first color (e.g., red light) and block or absorb light of a second color (e.g., green light) and light of a third color (e.g., blue light). For example, the first color filter (CF1) may be a red color filter and may include a red colorant. The red colorant may consist of a red dye or a red pigment.

[0055] A second color filter (CF2) may be placed in a second light-emitting region (LA2) on a substrate (SUB). The second color filter (CF2) may be surrounded by a first light-blocking member (BK1). The second color filter (CF2) may overlap with the second wavelength conversion unit (WLC2) in the thickness direction. The second color filter (CF2) may selectively transmit light of a second color (e.g., green light) and block or absorb light of a first color (e.g., red light) and light of a third color (e.g., blue light). For example, the second color filter (CF2) may be a green color filter and may include a green colorant. The green colorant may consist of a green dye or a green pigment.

[0056] A third color filter (CF3) may be placed in a third light-emitting region (LA3) on a substrate (SUB). The third color filter (CF3) may be surrounded by a first light-blocking member (BK1). The third color filter (CF3) may overlap with the light-transmitting portion (LTU) in the thickness direction. The third color filter (CF3) may selectively transmit light of a third color (e.g., blue light) and block or absorb light of a first color (e.g., red light) and light of a second color (e.g., green light). For example, the third color filter (CF3) may be a blue color filter and may include a blue colorant. The blue colorant may consist of a blue dye or a blue pigment.

[0057] The first to third color filters (CF1, CF2, CF3) can absorb a portion of the light entering from outside the display device (10) to reduce reflected light caused by external light. Accordingly, the first to third color filters (CF1, CF2, CF3) can prevent color distortion caused by external light reflection.

[0058] The first to third color filters (CF1, CF2, CF3) are placed between the substrate (SUB) and the thin-film transistor layer (TFTL), so that the display device (10) may not require a separate substrate for the first to third color filters (CF1, CF2, CF3). Accordingly, the thickness of the display device (10) may be relatively reduced.

[0059] The first protective layer (PAS1) can cover the first to third color filters (CF1, CF2, CF3). The first protective layer (PAS1) can protect the first to third color filters (CF1, CF2, CF3).

[0060] A first flattening layer (OC1) is provided on top of a first protective layer (PAS1) to flatten the top of a color filter layer (CFL). The first flattening layer (OC1) may include an organic material. For example, the first flattening layer (OC1) may include at least one of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and a polyimide resin.

[0061] The wavelength conversion layer (WLCL) may include a first capping layer (CAP1), a second light-blocking member (BK2), a first wavelength conversion unit (WLC1), a second wavelength conversion unit (WLC2), a light-transmitting unit (LTU), a second capping layer (CAP2), and a second flattening layer (OC2).

[0062] The first capping layer (CAP1) may be disposed on the first planarization layer (OC1) of the color filter layer (CFL). The first capping layer (CAP1) may seal the lower surface of the first and second wavelength conversion units (WLC1, WLC2) and the light transmission unit (LTU). The first capping layer (CAP1) may include an inorganic material. For example, the first capping layer (CAP1) may include at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride.

[0063] The second light-blocking member (BK2) may be placed in the first to third light-blocking regions (BA1, BA2, BA3) on the first capping layer (CAP1). The second light-blocking member (BK2) may overlap with the first light-blocking member (BK1) in the thickness direction. The second light-blocking member (BK2) can block the transmission of light. The second light-blocking member (BK2) can improve color reproduction by preventing light from intruding and mixing between the first to third light-emitting regions (LA1, LA2, LA3). The second light-blocking member (BK2) may be arranged in a grid shape surrounding the first to third light-emitting regions (LA1, LA2, LA3) on a plane.

[0064] The second light-blocking member (BK2) may include an organic light-blocking material and a liquid-repellent component. Here, the liquid-repellent component may be composed of a fluorine-containing monomer or a fluorine-containing polymer, and specifically may include a fluorine-containing aliphatic polycarbonate. For example, the second light-blocking member (BK2) may be composed of a black organic material containing the liquid-repellent component. The second light-blocking member (BK2) may be formed through a coating and exposure process, etc., of an organic light-blocking material containing the liquid-repellent component.

[0065] The second light-blocking member (BK2) can separate the first and second wavelength conversion sections (WLC1, WLC2) and the light transmission section (LTU) into corresponding light-emitting regions (LA) by including a liquid-repellent component. For example, if the first and second wavelength conversion sections (WLC1, WLC2) and the light transmission section (LTU) are formed by an inkjet method, an ink composition may flow on the upper surface of the second light-blocking member (BK2). In this case, the second light-blocking member (BK2) can induce the ink composition to flow into each light-emitting region (LA) by including a liquid-repellent component. Therefore, the second light-blocking member (BK2) can prevent the ink composition from mixing.

[0066] A first wavelength conversion unit (WLC1) may be disposed in a first light-emitting region (LA1) on a first capping layer (CAP1). The first wavelength conversion unit (WLC1) may be surrounded by a second light-blocking member (BK2). The first wavelength conversion unit (WLC1) may include a first base resin (BS1), a first scatterer (SCT1), and a first wavelength shifter (WLS1).

[0067] The first base resin (BS1) may include a material with a relatively high light transmittance. The first base resin (BS1) may be made of a transparent organic material. For example, the first base resin (BS1) may include at least one of organic materials such as an epoxy resin, an acrylic resin, a cardo resin, and an imide resin.

[0068] The first scatterer (SCT1) may have a refractive index different from that of the first base resin (BS1) and may form an optical interface with the first base resin (BS1). For example, the first scatterer (SCT1) may include a light-scattering material or light-scattering particles that scatter at least a portion of the transmitted light. For example, the first scatterer (SCT1) may include metal oxides such as titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), or may include organic particles such as acrylic resin or urethane resin. The first scatterer (SCT1) may scatter light in random directions regardless of the incident direction of the incident light without substantially changing the peak wavelength of the incident light.

[0069] The first wavelength shifter (WLS1) can convert or shift the peak wavelength of incident light to the first peak wavelength. For example, the first wavelength shifter (WLS1) can convert and emit light provided by the display device (10) into red light having a single peak wavelength in the range of 610 nm to 650 nm. The first wavelength shifter (WLS1) may be a quantum dot, a quantum rod, or a phosphor. A quantum dot may be a particulate material that emits a specific color as electrons transition from the conduction band to the valence band.

[0070] For example, quantum dots can be semiconductor nanocrystalline materials. Depending on their composition and size, quantum dots can have a specific band gap and emit light with a specific wavelength after absorbing light. Examples of semiconductor nanocrystalline quantum dots include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0071] The light emitted by the first wavelength shifter (WLS1) may have a Full Width of Half Maximum (FWHM) of the emission wavelength spectrum of 45 nm or less, 40 nm or less, or 30 nm or less, and the color purity and color reproducibility of the color displayed by the display device (10) can be further improved. The light emitted by the first wavelength shifter (WLS1) may be emitted in multiple directions regardless of the incident direction of the incident light. Accordingly, the side visibility of red displayed in the first emission region (LA1) can be improved.

[0072] A portion of the light provided by the light-emitting element layer (EML) may pass through the first wavelength conversion unit (WLC1) without being converted into red light by the first wavelength shifter (WLS1). The light provided by the light-emitting element layer (EML) that is not converted by the first wavelength conversion unit (WLC1) and is incident on the first color filter (CF1) may be blocked by the first color filter (CF1). Furthermore, the red light provided by the light-emitting element layer (EML) that is converted by the first wavelength conversion unit (WLC1) may pass through the first color filter (CF1) and be emitted to the outside. Therefore, the first light-emitting region (LA1) may emit red light.

[0073] The second wavelength converter (WLC2) may be disposed in the second light-emitting region (LA2) on the first capping layer (CAP1). The second wavelength converter (WLC2) may be surrounded by a second light-blocking member (BK2). The second wavelength converter (WLC2) may include a second base resin (BS2), a second scatterer (SCT2), and a second wavelength shifter (WLS2).

[0074] The second base resin (BS2) may include a material with relatively high light transmittance. The second base resin (BS2) may be made of a transparent organic material. For example, the second base resin (BS2) may be made of the same material as the first base resin (BS1) or may be made of the material exemplified in the first base resin (BS1).

[0075] The second scatterer (SCT2) may have a refractive index different from that of the second base resin (BS2) and may form an optical interface with the second base resin (BS2). For example, the second scatterer (SCT2) may include a light-scattering material or light-scattering particles that scatter at least a portion of the transmitted light. For example, the second scatterer (SCT2) may be made of the same material as the first scatterer (SCT1) or may be made of the material exemplified in the first scatterer (SCT1). The second scatterer (SCT2) may scatter light in random directions regardless of the incident direction of the incident light without substantially changing the peak wavelength of the incident light.

[0076] The second wavelength shifter (WLS2) can convert or shift the peak wavelength of incident light to a second peak wavelength different from the first peak wavelength of the first wavelength shifter (WLS1). For example, the second wavelength shifter (WLS2) can convert and emit light provided by the display device (10) into green light having a single peak wavelength in the range of 510 nm to 550 nm. The second wavelength shifter (WLS2) may be a quantum dot, a quantum rod, or a phosphor. The second wavelength shifter (WLS2) may include a material of the same nature as the material exemplified in the first wavelength shifter (WLS1). The wavelength conversion range of the second wavelength shifter (WLS2) may be made of a quantum dot, a quantum rod, or a phosphor such that it is different from the wavelength conversion range of the first wavelength shifter (WLS1).

[0077] The light-transmitting unit (LTU) may be disposed in a third light-emitting region (LA3) on the first capping layer (CAP1). The light-transmitting unit (LTU) may be surrounded by a second light-blocking member (BK2). The light-transmitting unit (LTU) may transmit while maintaining the peak wavelength of the incident light. The light-transmitting unit (LTU) may include a third base resin (BS3) and a third scatterer (SCT3).

[0078] The third base resin (BS3) may include a material with relatively high light transmittance. The third base resin (BS3) may be made of a transparent organic material. For example, the third base resin (BS3) may be made of the same material as the first or second base resin (BS1, BS2), or may be made of the material exemplified in the first or second base resin (BS1, BS2).

[0079] The third scatterer (SCT3) may have a refractive index different from that of the third base resin (BS3) and may form an optical interface with the third base resin (BS3). For example, the third scatterer (SCT3) may include a light-scattering material or light-scattering particles that scatter at least a portion of the transmitted light. For example, the third scatterer (SCT3) may be made of the same material as the first or second scatterer (SCT1, SCT2) or may be made of the material exemplified in the first or second scatterer (SCT1, SCT2). The third scatterer (SCT3) may scatter light in random directions regardless of the incident direction of the incident light without substantially changing the peak wavelength of the incident light.

[0080] Since the first and second wavelength conversion units (WLC1, WLC2) and the light transmission unit (LTU) are positioned between the color filter layer (CFL) and the thin film transistor layer (TFTL), the display device (10) may not require a separate substrate for the first and second wavelength conversion units (WLC1, WLC2) and the light transmission unit (LTU). Accordingly, the first and second wavelength conversion units (WLC1, WLC2) and the light transmission unit (LTU) can be easily aligned with each of the first to third light-emitting regions (LA1, LA2, LA3), and the thickness of the display device (10) can be relatively reduced.

[0081] The second capping layer (CAP2) may cover the first and second wavelength conversion sections (WLC1, WLC2), the light transmission section (LTU), and the second light-blocking member (BK2). For example, the second capping layer (CAP2) may seal the first and second wavelength conversion sections (WLC1, WLC2) and the light transmission section (LTU) to prevent damage or contamination of the first and second wavelength conversion sections (WLC1, WLC2) and the light transmission section (LTU). The second capping layer (CAP2) may be made of the same material as the first capping layer (CAP1) or may be made of the material exemplified in the first capping layer (CAP1).

[0082] The second flattening layer (OC2) is disposed on top of the second capping layer (CAP2) to flatten the top of the wavelength conversion layer (WLCL). The second flattening layer (OC2) may include an organic material. For example, the second flattening layer (OC2) may include at least one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0083] The thin film transistor layer (TFTL) may include a thin film transistor (TFT), a gate insulating layer (GI), an interlayer insulating layer (ILD), a connecting electrode (CNE), a second protective layer (PAS2), and a third planarization layer (OC3).

[0084] A thin-film transistor (TFT) can be placed on the second planarization layer (OC2) of the wavelength conversion layer (WLCL) and can form a pixel circuit for each of a plurality of pixels. For example, the thin-film transistor (TFT) may be a driving transistor or a switching transistor of a pixel circuit. The thin-film transistor (TFT) may include a semiconductor region (ACT), a gate electrode (GE), a source electrode (SE), and a drain electrode (DE).

[0085] The semiconductor region (ACT), source electrode (SE), and drain electrode (DE) may be disposed on the second planarization layer (OC2) of the wavelength conversion layer (WLCL). The semiconductor region (ACT) may overlap with the gate electrode (GE) in the thickness direction and may be insulated by a gate insulating film (GI). The source electrode (SE) and drain electrode (DE) may be provided by making the material of the semiconductor region (ACT) conductive.

[0086] The gate electrode (GE) can be placed on top of the gate insulating film (GI). The gate electrode (GE) can overlap with the semiconductor region (ACT) with the gate insulating film (GI) in between.

[0087] A gate insulating film (GI) may be provided on top of a semiconductor region (ACT), a source electrode (SE), and a drain electrode (DE). For example, the gate insulating film (GI) may cover the semiconductor region (ACT), the source electrode (SE), the drain electrode (DE), and a second planarization layer (OC2), and may insulate the semiconductor region (ACT) from the gate electrode (GE). The gate insulating film (GI) may include a contact hole through which a connecting electrode (CNE) passes.

[0088] An interlayer insulating film (ILD) may be placed on top of a gate electrode (GE). For example, the interlayer insulating film (ILD) may include a contact hole through which a connecting electrode (CNE) passes. Here, the contact hole of the interlayer insulating film (ILD) may be connected to a contact hole of the gate insulating film (GI).

[0089] A connecting electrode (CNE) can be placed on an interlayer insulating film (ILD). The connecting electrode (CNE) can connect the drain electrode (DE) of a thin-film transistor (TFT) and the first electrode (AE) of a light-emitting element (EL). The connecting electrode (CNE) can be contacted to the drain electrode (DE) through a contact hole provided in the gate insulating film (GI) and the interlayer insulating film (ILD).

[0090] A second protective layer (PAS2) is provided on top of a connecting electrode (CNE) to protect a thin-film transistor (TFT). For example, the second protective layer (PAS2) may include a contact hole through which the first electrode (AE) of a light-emitting element (EL) passes.

[0091] A third flattening layer (OC3) is provided on top of the second protection layer (PAS2) to flatten the top of the thin-film transistor layer (TFTL). For example, the third flattening layer (OC3) may include a contact hole through which the first electrode (AE) of the light-emitting element (EL) passes. Here, the contact hole of the third flattening layer (OC3) may be connected to the contact hole of the second protection layer (PAS2).

[0092] The light-emitting element layer (EML) may include a light-emitting element (EL), a first contact electrode (CTE1), a second contact electrode (CTE2), a first insulating film (IL1), a second insulating film (IL2), a third protective layer (PAS3), and a reflective member (RM).

[0093] The light-emitting element (EL) can be placed on the third planarization layer (OC3) of the thin-film transistor layer (TFTL). The light-emitting element (EL) can be placed so as to overlap with one of the first to third light-emitting regions (LA1, LA2, LA3).

[0094] The light-emitting element (EL) may include a first electrode (AE), a second electrode (CE), and a light-emitting diode (ED).

[0095] The first electrode (AE) may be disposed on the third planarization layer (OC3) of the thin-film transistor layer (TFTL). The first electrode (AE) may be connected to a connecting electrode (CNE) through a contact hole provided in the third planarization layer (OC3) and the second protection layer (PAS2). The first electrode (AE) may be connected to the drain electrode (DE) of the thin-film transistor (TFT) through the connecting electrode (CNE). The first electrode (AE) may be the anode electrode of the light-emitting element (EL), but is not limited thereto.

[0096] The second electrode (CE) may be spaced apart from the first electrode (AE) on the third planarization layer (OC3) of the thin-film transistor layer (TFTL). For example, the second electrode (CE) may receive a common voltage supplied to the entire pixel. The second electrode (CE) may be the cathode electrode of the light-emitting element (EL), but is not limited thereto.

[0097] A light-emitting diode (ED) may be disposed between a first electrode (AE) and a second electrode (CE) on a third planarization layer (OC3) of a thin-film transistor layer (TFTL). The light-emitting diode (ED) may be disposed spaced apart from each of the first electrode (AE) and the second electrode (CE). One end of the light-emitting diode (ED) may be connected to the first electrode (AE) through a first contact electrode (CTE1), and the other end of the light-emitting diode (ED) may be connected to the second electrode (CE) through a second contact electrode (CTE2). For example, a plurality of light-emitting diodes (ED) may include an active layer having the same material and may emit light of the same wavelength range or light of the same color. The light emitted from each of the first to third light-emitting regions (LA1, LA2, LA3) may have the same color. For example, a plurality of light-emitting diodes (ED) may emit light of the third color or blue light having a peak wavelength in the range of 440 nm to 480 nm. Therefore, the light-emitting element layer (EML) can emit a third color of light or blue light.

[0098] The first contact electrode (CTE1) can cover one end of the light-emitting diode (ED) and the first electrode (AE). The first contact electrode (CTE1) can connect one end of the light-emitting diode (ED) and the first electrode (AE). The first contact electrode (CTE1) can be insulated from the second contact electrode (CTE2) by the first insulating film (IL1) and the second insulating film (IL2).

[0099] The second contact electrode (CTE2) can cover the other end of the light-emitting diode (ED) and the second electrode (CE). The second contact electrode (CTE2) can connect the other end of the light-emitting diode (ED) and the second electrode (CE). The second contact electrode (CTE2) can be insulated from the first contact electrode (CTE1) by the first insulating film (IL1) and the second insulating film (IL2).

[0100] The first insulating layer (IL1) can cover a portion of the light-emitting diode (ED). The first insulating layer (IL1) can prevent the second contact electrode (CTE2) from extending to one end of the light-emitting diode (EL). The first insulating layer (IL1) can insulate the first contact electrode (CTE1) and the second contact electrode (CTE2).

[0101] The second insulating layer (IL2) can cover a portion of the first insulating layer (IL1) and the second electrode (CE). The second insulating layer (IL2) can prevent the first contact electrode (CTE1) from extending to the second contact electrode (CTE2).

[0102] The third protective layer (PAS3) can cover the light-emitting element (EL), the first contact electrode (CTE1), and the second contact electrode (CTE2). The third protective layer (PAS3) can be placed so as to overlap one of the first to third light-emitting regions (LA1, LA2, LA3). The third protective layer (PAS3) can prevent damage to the plurality of light-emitting elements (EL) by preventing the penetration of impurities, such as moisture or air, from the outside.

[0103] The third protective layer (PAS3) may include a material with relatively high light transmittance. The third protective layer (PAS3) may be made of a transparent organic material. For example, the third protective layer (PAS3) may include at least one of organic materials such as epoxy resin, acrylic resin, cardo resin, and imide resin. For example, the third protective layer (PAS3) may determine the shape of the reflective member (RM).

[0104] The reflective member (RM) can cover the third protective layer (PAS3). The reflective member (RM) can reflect light (L) emitted from the light-emitting diode (ED) toward the substrate (SUB). The light (L) emitted from the light-emitting diode (ED) can be reflected by the reflective member (RM) and can pass through the thin-film transistor layer (TFTL), the wavelength conversion layer (WLCL), and the color filter layer (CFL) to be emitted toward the front of the display device (10). For example, the light (L) reflected from the reflective member (RM) can pass through the first wavelength conversion unit (WLC1) and the first color filter (CF1) to be emitted to the first light-emitting region (LA1). The light emitted from the reflective member (RM) can pass through the second wavelength conversion unit (WLC2) and the second color filter (CF2) to be emitted to the second light-emitting region (LA2). Additionally, light emitted from the reflective member (RM) can pass through the light-transmitting unit (LTU) and the third color filter (CF3) and be emitted into the third light-emitting region (LA3). The shape of the reflective member (RM) can be determined by the third protective layer (PAS3), and the reflective member (RM) can have a shape that maximizes the light-emitting efficiency of the light-emitting element layer (EML).

[0105] For example, the reflective member (RM) may include an alloy, nitride, or oxide, etc., comprising at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), copper (Cu), lithium fluoride / calcium (LiF / Ca), and lithium fluoride / aluminum (LiF / Al). The reflective member (RM) may have a single-layer structure or a multi-layer structure.

[0106] The encapsulation layer (TFE) can cover the light-emitting element layer (EML). For example, the encapsulation layer (TFE) can cover the top and side surfaces of the reflective member (RM) and a portion of the thin-film transistor layer (TFTL). For example, the encapsulation layer (TFE) may include at least one inorganic film to prevent the penetration of oxygen or moisture. Additionally, the encapsulation layer (TFE) may include at least one organic film to protect the display device (10) from foreign substances such as dust.

[0107] A metal layer (HRL) may be placed on an encapsulation layer (TFE). The metal layer (HRL) may release heat generated inside the display device (10) to the outside. The thermal conductivity of the metal layer (HRL) may be higher than the thermal conductivity of the encapsulation layer (TFE). The metal layer (HRL) may release heat to the outside of the display device (10) when heat generated in the light-emitting element layer (EML) or thin-film transistor layer (TFTL) is transferred through the encapsulation layer (TFE).

[0108] A protective film (PF) can be placed on a metal layer (HRL). The protective film (PF) can cover the metal layer (HRL) to prevent damage to the metal layer (HRL).

[0109] FIG. 5 is a drawing showing a light-emitting element according to one embodiment.

[0111] * Referring to FIG. 5, the light-emitting diode (ED) may include a first semiconductor layer (111), a second semiconductor layer (113), an active layer (115), an electrode layer (117), and an insulating film (118). For example, the light-emitting diode (ED) may have a size in the micrometer or nanometer range and may be an inorganic light-emitting diode containing inorganic materials. The inorganic light-emitting diode may be aligned between two electrodes according to an electric field formed in a specific direction between two electrodes facing each other.

[0112] The first semiconductor layer (111) may be an n-type semiconductor. For example, when a light-emitting diode (ED) emits blue light, the first semiconductor layer (111) may include a semiconductor material having the chemical formula AlxGayIn1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The first semiconductor layer (111) may include at least one semiconductor material among n-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The first semiconductor layer (111) may be doped with an n-type dopant such as Si, Ge, or Sn. The first semiconductor layer (111) may be n-GaN doped with n-type Si. The length of the first semiconductor layer (111) may be in the range of 1.5 μm to 5 μm, but is not limited thereto.

[0113] The second semiconductor layer (113) may be disposed on the active layer (115). For example, when the light-emitting diode (ED) emits blue or green light, the second semiconductor layer (113) may include a semiconductor material having the chemical formula AlxGayIn1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the second semiconductor layer (113) may include at least one semiconductor material among p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The second semiconductor layer (113) may be doped with a p-type dopant such as Mg, Zn, Ca, Se, or Ba. The second semiconductor layer (113) may be p-GaN doped with p-type Mg. The length of the second semiconductor layer (113) may be in the range of 0.05 μm to 0.10 μm, but is not limited thereto.

[0114] Each of the first and second semiconductor layers (111, 113) may be composed of a single layer, but is not limited thereto. For example, each of the first and second semiconductor layers (111, 113) may have multiple layers including a clad layer or a TSBR (Tensile Strain Barrier Reducing) layer.

[0115] The active layer (115) may be disposed between the first and second semiconductor layers (111, 113). The active layer (115) may include a material having a single or multiple quantum well structure. If the active layer (115) includes a material having a multiple quantum well structure, a plurality of quantum layers and well layers may be stacked alternately. The active layer (115) may emit light through the coupling of electron-hole pairs according to an electrical signal applied through the first and second semiconductor layers (111, 113). For example, if the active layer (115) emits blue light, it may include a material such as AlGaN or AlGaInN. If the active layer (115) has a structure in which quantum layers and well layers are stacked alternately in a multiple quantum well structure, the quantum layers may include a material such as AlGaN or AlGaInN, and the well layers may include a material such as GaN or AlInN. The active layer (115) can emit blue light by including AlGaInN as the quantum layer and AlInN as the well layer.

[0116] As another example, the active layer (115) may have a structure in which semiconductor materials with a large band gap energy and semiconductor materials with a small band gap energy are alternately stacked, and may include semiconductor materials of group 3 to group 5 depending on the wavelength range of the emitted light. The light emitted by the active layer (115) is not limited to blue light and may emit red or green light depending on the case. The length of the active layer (115) may have a range of 0.05 μm to 0.10 μm, but is not limited thereto.

[0117] The light emitted from the active layer (115) can be emitted along the length of the light-emitting diode (ED) and can also be emitted to both sides. The directionality of the light emitted from the active layer (115) may not be limited.

[0118] The electrode layer (117) may be an ohmic contact electrode. As another example, the electrode layer (117) may be a Schottky contact electrode. The light-emitting diode (ED) may include at least one electrode layer (117). The electrode layer (117) may reduce the resistance between the light-emitting diode (ED) and the electrode when the light-emitting diode (ED) is electrically connected to the electrode. The electrode layer (117) may include a conductive metal. For example, the electrode layer (117) may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin-zinc oxide (ITZO). The electrode layer (117) may include an n-type or p-type doped semiconductor material.

[0119] The insulating film (118) can surround the outer surface of a plurality of semiconductor layers and electrode layers. The insulating film (118) can surround the outer surface of the active layer (115) and can extend in the direction in which the light-emitting diode (ED) extends. The insulating film (118) can protect the light-emitting diode (ED). For example, the insulating film (118) can surround the side of the light-emitting diode (ED) and expose both ends in the longitudinal direction of the light-emitting diode (ED).

[0120] The insulating film (118) may include materials having insulating properties, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum nitride (AlN), aluminum oxide (Al2O3), etc. Accordingly, the insulating film (118) can prevent an electrical short circuit that may occur when the active layer (115) comes into direct contact with the electrode through which an electrical signal is transmitted to the light-emitting diode (ED). In addition, the insulating film (118) can prevent a decrease in light-emitting efficiency by protecting the outer surface of the light-emitting diode (ED), including the active layer (115).

[0121] The outer surface of the insulating film (118) can be surface-treated. When manufacturing the display device (10), the light-emitting diode (ED) can be sprayed onto the electrode in a dispersed state within a predetermined ink and aligned. By treating the surface of the insulating film (118) as hydrophobic or hydrophilic, the light-emitting diode (ED) can remain dispersed within the ink without aggregating with adjacent light-emitting diodes (ED).

[0122] FIG. 6 is a plan view showing the combined structure of a tile-type display device according to one embodiment, and FIG. 7 is a cross-sectional view of one example cut along the cutting line II-II' of FIG. 6. In the following, configurations identical to the above-described configurations will be briefly described or omitted.

[0123] Referring to FIGS. 6 and 7, a tile-type display device (TD) may include a plurality of display devices (10) and a coupling member (20). For example, the tile-type display device (TD) may include first to fourth display devices (10-1 to 10-4), but the number of display devices (10) is not limited to the embodiment of FIG. 6. The number of display devices (10) may be determined according to the size of each of the display devices (10) and the tile-type display device (TD).

[0124] Each of the first and second display devices (10) may include a substrate (SUB), a color filter layer (CFL), a wavelength conversion layer (WLCL), a thin film transistor layer (TFTL), a light-emitting element layer (EML), an encapsulation layer (TFE), a metal layer (HRL), a protective film (PF), a pad portion (PD), a connection film (ACF), a flexible film (210), and a source driving portion (220).

[0125] The substrate (SUB) may be a base substrate or a base member and may be made of an insulating material such as a polymer resin. For example, the substrate (SUB) may be a flexible substrate capable of bending, folding, rolling, etc. The substrate (SUB) may include polyimide (PI), but is not limited thereto.

[0126] A color filter layer (CFL), a wavelength conversion layer (WLCL), a thin-film transistor layer (TFTL), a light-emitting element layer (EML), and an encapsulation layer (TFE) can be sequentially stacked on a substrate (SUB). Thus, the substrate (SUB) can support the display device (10). By sequentially stacking the color filter layer (CFL), the wavelength conversion layer (WLCL), the thin-film transistor layer (TFTL), the light-emitting element layer (EML), and the encapsulation layer (TFE) on the substrate (SUB), the display device (10) may not require a separate substrate for the wavelength conversion layer (WLCL) or the color filter layer (CFL). Therefore, the thickness of the display device (10) can be relatively reduced.

[0127] The thin-film transistor layer (TFTL) may include a connection wire (CWL) disposed on an interlayer insulating film (ILD). The connection wire (CWL) may be made of the same material in the same layer as the connection electrode (CNE). The connection wire (CWL) may be disposed in the light-blocking area (BA) or the non-display area (NDA) of the display area (DA). The connection wire (CWL) may overlap with the first light-blocking member (BK1) and the second light-blocking member (BK2). The connection wire (CWL) may provide a voltage or signal supplied from the pad portion (PD) to the thin-film transistor (TFT). For example, the connection wire (CWL) may supply a data voltage received from the pad portion (PD) to the data line and supply a power voltage received from the pad portion (PD) to the power line.

[0128] The pad portion (PD) may be placed on the edge of the display device (10) on the encapsulation layer (TFE). The pad portion (PD) may be connected to the connection wiring (CWL) of the thin-film transistor layer (TFTL) through a first contact hole (CNT1) penetrating the encapsulation layer (TFE), the third planarization layer (OC3), and the second protection layer (PAS2). The pad portion (PD) may supply a voltage or signal received from the flexible film (210) or the source driver (220) to the connection wiring (CWL).

[0129] The pad portion (PD) may be positioned at the rear of the display device (10). For example, light emitted from the light-emitting element layer (EML) may be reflected by the reflective member (RM) and emitted to the front of the display device (10) through the thin-film transistor layer (TFTL), wavelength conversion layer (WLCL), color filter layer (CFL), and substrate (SUB). By positioning the pad portion (PD) at the rear of the display device (10), the area of ​​the non-display area (NDA) of the display device (10) can be minimized. For example, the pad portion (PD) may be positioned in the light-blocking area (BA) or the non-display area (NDA) of the display area (DA). The pad portion (PD) may overlap with the first light-blocking member (BK1) and the second light-blocking member (BK2). Accordingly, the tile-type display device (TD) can prevent the user from perceiving the non-display area (NDA) or boundary portion between the multiple display devices (10) by minimizing the spacing between the multiple display devices (10).

[0130] The pad portion (PD) may be made of the same material as the metal layer (HRL) in the same layer. The pad portion (PD) and the metal layer (HRL) can be formed by applying the material forming the pad portion (PD) and the metal layer (HRL) onto the encapsulation layer (TFE) and then patterning it. Accordingly, the display device (10) can reduce process steps and process time and reduce manufacturing costs.

[0131] The connection film (ACF) can attach the flexible film (210) to the pad electrode (PD). One side of the connection film (ACF) may be attached to the pad electrode (PD), and the other side of the connection film (ACF) may be attached to the flexible film (210). For example, the connection film (ACF) may cover the entire pad electrode (PD), but is not limited thereto.

[0132] The connection film (ACF) may include an anisotropic conductive film. When the connection film (ACF) includes an anisotropic conductive film, the connection film (ACF) may have conductivity in the area where the contact pad of the pad electrode (PD) and the flexible film (210) come into contact, and may electrically connect the flexible film (210) to the pad electrode (PD).

[0133] A flexible film (210) can be placed on a pad portion (PD). One side of the flexible film (210) can be connected to the pad electrode (PD), and the other side of the flexible film (210) can be connected to a source circuit board (not shown). The flexible film (210) can transmit a signal from a source driver (220) to a display device (10). For example, the source driver (220) may be an integrated circuit (IC). The source driver (220) can convert digital video data into an analog data voltage based on a source control signal from a timing control unit and supply it to a data line of a display area (DA) through the flexible film (210).

[0134] A connecting member (20) is positioned between each of the plurality of display devices (10) to connect the sides of adjacent display devices (10) to each other. The connecting member (20) can implement a tile-type display device (TD) by connecting the sides of the first to fourth display devices (10-1 to 10-4) arranged in a grid shape. The connecting member (20) can connect the sides of each of the adjacent display devices (10).

[0135] For example, the connecting member (20) can be made of an adhesive or double-sided tape having a relatively thin thickness, thereby minimizing the gap between multiple display devices (10). As another example, the connecting member (20) can be made of a connecting frame having a relatively thin thickness, thereby minimizing the gap between multiple display devices (10). Thus, the tile-type display device (TD) can prevent the user from perceiving the non-display area (NDA) or boundary portion between multiple display devices (10).

[0136] FIG. 8 is a cross-sectional view of another example cut along the cutting line II-II' of FIG. 6. The display device of FIG. 8 differs from the display device of FIG. 7 in the configuration of the connecting wiring (CWL), and configurations identical to the aforementioned configuration will be briefly described or omitted.

[0137] Referring to FIG. 8, the thin-film transistor layer (TFTL) may include a connection wire (CWL) disposed on a gate insulating film (GI). The connection wire (CWL) may be made of the same material in the same layer as the gate electrode (GE) of the thin-film transistor (TFT). The connection wire (CWL) may be disposed in a light-blocking area (BA) or a non-display area (NDA) of a display area (DA). The connection wire (CWL) may overlap with a first light-blocking member (BK1) and a second light-blocking member (BK2). The connection wire (CWL) may provide a voltage or signal supplied from a pad portion (PD) to the thin-film transistor (TFT). For example, the connection wire (CWL) may supply a gate signal received from the pad portion (PD) to a gate line and may supply a light-emitting signal received from the pad portion (PD) to a light-emitting control line.

[0138] The pad portion (PD) may be placed on the edge of the display device (10) on the encapsulation layer (TFE). The pad portion (PD) may be connected to the connection wiring (CWL) of the thin-film transistor layer (TFTL) through a second contact hole (CNT2) penetrating the encapsulation layer (TFE), the third planarization layer (OC3), the second protection layer (PAS2), and the interlayer insulating film (ILD). The pad portion (PD) may supply a voltage or signal received from the flexible film (210) or the source driver (220) to the connection wiring (CWL).

[0139] FIG. 9 is a cross-sectional view of another example cut along the cutting line II-II' of FIG. 6. The display device of FIG. 9 differs in the configuration of the reflective member (RM) from the display device of FIG. 7, and configurations identical to the aforementioned configuration will be briefly described or omitted.

[0140] Referring to FIG. 9, each of the first and second display devices (10) may include a substrate (SUB), a color filter layer (CFL), a wavelength conversion layer (WLCL), a thin film transistor layer (TFTL), a light-emitting element layer (EML), an encapsulation layer (TFE), a metal layer (HRL), a protective film (PF), a pad portion (PD), a connection film (ACF), a flexible film (210), and a source driving portion (220).

[0141] The light-emitting element layer (EML) may include a light-emitting element (EL), a first contact electrode (CTE1), a second contact electrode (CTE2), a first insulating film (IL1), a second insulating film (IL2), a third protective layer (PAS3), and a reflective member (RM).

[0142] The reflective member (RM) can cover the third protective layer (PAS3) and the third planarization layer (OC3). The reflective member (RM) can reflect light (L) emitted from the light-emitting diode (ED) toward the substrate (SUB). The light (L) emitted from the light-emitting diode (ED) can be reflected by the reflective member (RM) and can pass through the thin-film transistor layer (TFTL), the wavelength conversion layer (WLCL), and the color filter layer (CFL) to be emitted toward the front of the display device (10). For example, the light (L) reflected from the reflective member (RM) can pass through the first wavelength conversion unit (WLC1) and the first color filter (CF1) to be emitted to the first light-emitting region (LA1). The light emitted from the reflective member (RM) can pass through the second wavelength conversion unit (WLC2) and the second color filter (CF2) to be emitted to the second light-emitting region (LA2). Additionally, light emitted from the reflective member (RM) can pass through the light-transmitting unit (LTU) and the third color filter (CF3) and be emitted into the third light-emitting region (LA3). The shape of the reflective member (RM) can be determined by the third protective layer (PAS3) and the third planarization layer (OC3), and the reflective member (RM) can have a shape that maximizes the light-emitting efficiency of the light-emitting element layer (EML).

[0143] For example, the reflective member (RM) may include an alloy, nitride, or oxide, etc., comprising at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), copper (Cu), lithium fluoride / calcium (LiF / Ca), and lithium fluoride / aluminum (LiF / Al). The reflective member (RM) may have a single-layer structure or a multi-layer structure.

[0144] The encapsulation layer (TFE) can cover the light-emitting element layer (EML). The encapsulation layer (TFE) can cover the reflective member (RM). For example, the encapsulation layer (TFE) can cover a portion of the reflective member (RM) covering the third protective layer (PAS3) and another portion of the reflective member (RM) covering the third planarization layer (OC3). For example, the encapsulation layer (TFE) may include at least one inorganic film to prevent the penetration of oxygen or moisture. Additionally, the encapsulation layer (TFE) may include at least one organic film to protect the display device (10) from foreign substances such as dust.

[0145] FIGS. 10 to 18 are cross-sectional views illustrating the manufacturing process of a display device according to one embodiment.

[0146] In FIG. 10, a color filter layer (CFL), a wavelength conversion layer (WLCL), and a thin film transistor layer (TFTL) can be sequentially stacked on a substrate (SUB).

[0147] The color filter layer (CFL) may include a first light-blocking member (BK1), first to third color filters (CF1, CF2, CF3), and a first flattening layer (OC1).

[0148] The wavelength conversion layer (WLCL) may include a first capping layer (CAP1), a second light-blocking member (BK2), a first wavelength conversion unit (WLC1), a second wavelength conversion unit (WLC2), a light-transmitting unit (LTU), a second capping layer (CAP2), and a second flattening layer (OC2).

[0149] The thin film transistor layer (TFTL) may include a thin film transistor (TFT), a gate insulating layer (GI), an interlayer insulating layer (ILD), a connecting electrode (CNE), a second protective layer (PAS2), and a third planarization layer (OC3).

[0150] In FIG. 11, the first electrode (AE) may be placed on the third planarization layer (OC3) of the thin-film transistor layer (TFTL). The first electrode (AE) may be connected to a connecting electrode (CNE) through a contact hole provided in the third planarization layer (OC3) and the second protection layer (PAS2). The first electrode (AE) may be connected to the drain electrode (DE) of the thin-film transistor (TFT) through the connecting electrode (CNE). The first electrode (AE) may be the anode electrode of the light-emitting element (EL), but is not limited thereto.

[0151] The second electrode (CE) may be spaced apart from the first electrode (AE) on the third planarization layer (OC3) of the thin-film transistor layer (TFTL). For example, the second electrode (CE) may receive a common voltage supplied to the entire pixel. The second electrode (CE) may be the cathode electrode of the light-emitting element (EL), but is not limited thereto.

[0152] In FIG. 12, a light-emitting diode (ED) may be placed between a first electrode (AE) and a second electrode (CE) on a third planarization layer (OC3) of a thin-film transistor layer (TFTL). The light-emitting diode (ED) may be placed spaced apart from each of the first electrode (AE) and the second electrode (CE). The light-emitting diode (ED) may be aligned between the first electrode (AE) and the second electrode (CE) according to an electric field formed in a specific direction between the first electrode (AE) and the second electrode (CE). For example, the p-type semiconductor layer of the light-emitting diode (ED) may face the first electrode (AE), and the n-type semiconductor layer of the light-emitting diode (ED) may face the second electrode (CE), but is not limited thereto.

[0153] In FIG. 13, the first insulating layer (IL1) can cover a portion of the light-emitting diode (ED). The first insulating layer (IL1) can prevent the second contact electrode (CTE2) from extending to one end of the light-emitting diode (EL).

[0154] The second contact electrode (CTE2) can cover the other end of the light-emitting diode (ED) and the second electrode (CE). For example, the second contact electrode (CTE2) can connect the n-type semiconductor layer of the light-emitting diode (ED) and the second electrode (CE).

[0156] In FIG. 14, the second insulating layer (IL2) may cover a portion of the first insulating layer (IL1) and the second electrode (CE). The second insulating layer (IL2) may prevent the first contact electrode (CTE1) from extending to the second contact electrode (CTE2).

[0157] The first contact electrode (CTE1) can cover one end of the light-emitting diode (ED) and the first electrode (AE). For example, the first contact electrode (CTE1) can connect the p-type semiconductor layer of the light-emitting diode (ED) and the first electrode (AE). The first contact electrode (CTE1) can be insulated from the second contact electrode (CTE2) by the first insulating film (IL1) and the second insulating film (IL2).

[0158] In FIG. 15, the third protective layer (PAS3) can cover the light-emitting element (EL), the first contact electrode (CTE1), and the second contact electrode (CTE2). The third protective layer (PAS3) can be placed so as to overlap one of the first to third light-emitting regions (LA1, LA2, LA3). The third protective layer (PAS3) can prevent damage to the plurality of light-emitting elements (EL) by preventing the penetration of impurities, such as moisture or air, from the outside.

[0159] The third protective layer (PAS3) may include a material with relatively high light transmittance. The third protective layer (PAS3) may be made of a transparent organic material. For example, the third protective layer (PAS3) may include at least one of organic materials such as epoxy resin, acrylic resin, cardo resin, and imide resin. For example, the third protective layer (PAS3) may determine the shape of the reflective member (RM).

[0160] The reflective member (RM) can cover the third protective layer (PAS3). The reflective member (RM) can reflect light (L) emitted from the light-emitting diode (ED) toward the substrate (SUB). The light (L) emitted from the light-emitting diode (ED) can be reflected by the reflective member (RM) and can pass through the thin-film transistor layer (TFTL), the wavelength conversion layer (WLCL), and the color filter layer (CFL) to be emitted toward the front of the display device (10). For example, the light (L) reflected from the reflective member (RM) can pass through the first wavelength conversion unit (WLC1) and the first color filter (CF1) to be emitted to the first light-emitting region (LA1). The light emitted from the reflective member (RM) can pass through the second wavelength conversion unit (WLC2) and the second color filter (CF2) to be emitted to the second light-emitting region (LA2). Additionally, light emitted from the reflective member (RM) can pass through the light-transmitting unit (LTU) and the third color filter (CF3) and be emitted into the third light-emitting region (LA3). The shape of the reflective member (RM) can be determined by the third protective layer (PAS3), and the reflective member (RM) can have a shape that maximizes the light-emitting efficiency of the light-emitting element layer (EML).

[0161] For example, the reflective member (RM) may include an alloy, nitride, or oxide, etc., comprising at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), copper (Cu), lithium fluoride / calcium (LiF / Ca), and lithium fluoride / aluminum (LiF / Al). The reflective member (RM) may have a single-layer structure or a multi-layer structure.

[0162] In FIG. 16, the encapsulation layer (TFE) can cover the light-emitting element layer (EML). For example, the encapsulation layer (TFE) can cover the top and side surfaces of the reflective member (RM) and a portion of the thin-film transistor layer (TFTL). For example, the encapsulation layer (TFE) may include at least one inorganic film to prevent oxygen or moisture from penetrating. Additionally, the encapsulation layer (TFE) may include at least one organic film to protect the display device (10) from foreign substances such as dust.

[0163] The first contact hole (CNT1) can be patterned by a mask (MSK) provided on the encapsulation layer (TFE). For example, the material forming the mask (MSK) can be patterned through a wet etching process after being provided on the encapsulation layer (TFE). Additionally, parts of the encapsulation layer (TFE), the third planarization layer (OC3), and the second protection layer (PAS2) can be patterned through a dry etching process. The mask (MSK) can be removed after the first contact hole (CNT1) is formed. The process of forming the first contact hole (CNT1) is not limited to a wet etching process or a dry etching process.

[0164] In FIG. 17, the pad portion (PD) may be placed on the edge of the display device (10) on the encapsulation layer (TFE). The pad portion (PD) may be connected to the connection wiring (CWL) of the thin-film transistor layer (TFTL) through a first contact hole (CNT1) penetrating the encapsulation layer (TFE), the third planarization layer (OC3), and the second protection layer (PAS2).

[0165] The pad portion (PD) may be positioned at the rear of the display device (10). For example, light emitted from the light-emitting element layer (EML) may be reflected by the reflective member (RM) and emitted to the front of the display device (10) through the thin-film transistor layer (TFTL), wavelength conversion layer (WLCL), color filter layer (CFL), and substrate (SUB). By positioning the pad portion (PD) at the rear of the display device (10), the area of ​​the non-display area (NDA) of the display device (10) can be minimized. For example, the pad portion (PD) may be positioned in the light-blocking area (BA) or the non-display area (NDA) of the display area (DA). The pad portion (PD) may overlap with the first light-blocking member (BK1) and the second light-blocking member (BK2). Accordingly, the tile-type display device (TD) can prevent the user from perceiving the non-display area (NDA) or boundary portion between the multiple display devices (10) by minimizing the spacing between the multiple display devices (10).

[0166] The metal layer (HRL) may be disposed on the encapsulation layer (TFE) excluding the area where the pad portion (PD) is disposed. The metal layer (HRL) may be insulated from the pad portion (PD). The metal layer (HRL) may release heat generated inside the display device (10) to the outside. The thermal conductivity of the metal layer (HRL) may be higher than the thermal conductivity of the encapsulation layer (TFE). The metal layer (HRL) may release heat to the outside of the display device (10) when heat generated in the light-emitting element layer (EML) or thin-film transistor layer (TFTL) is transferred through the encapsulation layer (TFE).

[0167] The pad portion (PD) and the metal layer (HRL) can be made of the same material in the same layer. The pad portion (PD) and the metal layer (HRL) can be formed by applying the material forming the pad portion (PD) and the metal layer (HRL) onto the encapsulation layer (TFE) and then patterning it. Accordingly, the display device (10) can reduce process steps and process time and reduce manufacturing costs.

[0168] In FIG. 18, a flexible film (210) may be placed on a pad portion (PD). One side of the flexible film (210) may be connected to the pad electrode (PD), and the other side of the flexible film (210) may be connected to a source circuit board (not shown). The flexible film (210) may transmit a signal from a source driver (220) to a display device (10). For example, the source driver (220) may be an integrated circuit (IC). The source driver (220) may convert digital video data into an analog data voltage based on a source control signal from a timing control unit and supply it to a data line of a display area (DA) through the flexible film (210).

[0169] A protective film (PF) can be placed on a metal layer (HRL). The protective film (PF) can cover the metal layer (HRL) to prevent damage to the metal layer (HRL).

[0170] In this way, the pad portion (PD) of each of the plurality of display devices (10) is positioned at the rear of the display device (10), thereby minimizing the area of ​​the non-display area (NDA) of the display device (10). For example, the pad portion (PD) may be positioned in the light-blocking area (BA) or the non-display area (NDA) of the display area (DA). The pad portion (PD) may overlap with the first light-blocking member (BK1) and the second light-blocking member (BK2). Accordingly, the tile-type display device (TD) can prevent the user from perceiving the non-display area (NDA) or boundary portion between the plurality of display devices (10) by minimizing the spacing between the plurality of display devices (10).

[0171] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing the technical concept or essential features thereof. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0172] TD: Tile display 10: Display device 20: Connecting member SUB: Substrate CFL: Color filter layer WLCL: Wavelength conversion layer TFTL: Thin film transistor layer EML: Light-emitting layer EL: Light-emitting element CTE1, CTE2: First and second contact electrodes RM: Reflective element TFE: Encapsulation layer CWL: Connection wiring PD: Pad section ACT: Connection Film 210: Flexible Film 220: Source driver PF: Protective film

Claims

Claim 1 A display device comprising: a substrate including a plurality of light-emitting regions and a plurality of light-blocking regions surrounding each of the plurality of light-emitting regions; a thin-film transistor layer including a thin-film transistor disposed on the substrate and a connection wiring connected to the thin-film transistor; a light-emitting element layer including a plurality of light-emitting elements disposed on the thin-film transistor layer and corresponding to each of the plurality of light-emitting regions; an encapsulation layer covering the light-emitting element layer; a pad portion disposed on the encapsulation layer and contacting the connection wiring through a contact hole provided in the encapsulation layer; and a flexible film disposed on the pad portion, connected to the pad portion, and overlapping with at least one of the plurality of light-emitting regions, wherein the pad portion or the connection wiring overlaps the plurality of light-blocking regions. Claim 2 A display device according to claim 1, wherein the thin film transistor layer further comprises a connecting electrode disposed on the thin film transistor to connect the first electrode of the thin film transistor and the light-emitting element, and the connecting wiring disposed on the same layer as the connecting electrode. Claim 3 In claim 1, the connecting wiring is disposed on the same layer as the gate electrode of the thin-film transistor. Claim 4 delete Claim 5 A display device according to claim 1, further comprising a metal layer disposed on the sealing layer and spaced apart from the pad portion. Claim 6 In claim 5, the metal layer is a display device made of the same material as the pad portion. Claim 7 A display device according to claim 6, further comprising a protective film covering the metal layer. Claim 8 A display device according to claim 1, wherein each of the plurality of light-emitting elements comprises: a first electrode disposed on the thin-film transistor layer and connected to the thin-film transistor; a second electrode disposed on the thin-film transistor layer spaced apart from the first electrode; and a light-emitting diode disposed spaced apart between the first electrode and the second electrode. Claim 9 In claim 8, the light-emitting element layer further comprises: a first contact electrode covering one end of the light-emitting diode and the first electrode to connect the light-emitting diode and the first electrode; and a second contact electrode covering the other end of the light-emitting diode and the second electrode to connect the light-emitting diode and the second electrode. Claim 10 In claim 9, the light-emitting element layer further comprises a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode; and a reflective member covering the protective layer and reflecting light emitted from the light-emitting diode toward the substrate, wherein the reflective members of each of the plurality of light-emitting regions are spaced apart from each other. Claim 11 In claim 10, the sealing layer covers the upper and side surfaces of the reflective member and a portion of the thin-film transistor layer, forming a display device. Claim 12 A display device according to claim 9, wherein the light-emitting element layer comprises: a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode; and a reflective member covering the protective layer and the thin-film transistor layer and reflecting light emitted from the light-emitting diode toward the substrate. Claim 13 A tile-type display device comprising: a plurality of display devices including a display area having a plurality of pixels and a non-display area surrounding the display area; and a coupling member for combining the plurality of display devices, wherein each of the plurality of display devices comprises: a substrate including a plurality of light-emitting areas which are part of the display area and a plurality of light-blocking areas surrounding each of the plurality of light-emitting areas as another part of the display area; a thin-film transistor layer including a thin-film transistor disposed on the substrate and a connection wiring connected to the thin-film transistor; a light-emitting element layer including a plurality of light-emitting elements disposed on the thin-film transistor layer and corresponding to each of the plurality of light-emitting areas; an encapsulation layer covering the light-emitting element layer; a pad portion disposed on the encapsulation layer and contacting the connection wiring through a contact hole provided in the encapsulation layer; and a flexible film disposed on the pad portion, connected to the pad portion, and overlapping with at least one of the plurality of light-emitting areas, wherein the pad portion or the connection wiring overlaps with the non-display area or the plurality of light-blocking areas. Claim 14 In claim 13, the thin film transistor layer further comprises a connecting electrode disposed on the thin film transistor to connect the first electrode of the thin film transistor and the light-emitting element, and the connecting wiring is disposed on the same layer as the connecting electrode, forming a tile-type display device. Claim 15 In claim 13, the connection wiring is a tile-type display device disposed on the same layer as the gate electrode of the thin-film transistor. Claim 16 delete Claim 17 In claim 13, each of the plurality of display devices further comprises a metal layer disposed on the encapsulation layer and spaced apart from the pad portion, forming a tile-type display device. Claim 18 In claim 17, each of the plurality of display devices further comprises a protective film covering the metal layer, forming a tile-type display device. Claim 19 In claim 13, each of the plurality of light-emitting elements comprises a first electrode, a second electrode spaced apart from the first electrode, and a light-emitting diode spaced apart between the first electrode and the second electrode, and the light-emitting element layer further comprises a first contact electrode connecting the light-emitting diode and the first electrode, and a second contact electrode connecting the light-emitting diode and the second electrode, forming a tile-type display device. Claim 20 A tile-type display device according to claim 19, wherein the light-emitting element layer comprises: a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode; and a reflective member covering the protective layer and reflecting light emitted from the light-emitting diode toward the substrate.

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