Semiconductor chip bonding apparatus and bonding method

Abstract

A semiconductor chip bonding device comprises a substrate stage for supporting a second semiconductor chip attached to a first semiconductor chip via an adhesive film, a bonding head having a body portion movable on the substrate stage, a head portion provided at the bottom of the body portion and pressurizing in a vertical direction in contact with the upper surface of the second semiconductor chip, and a heating portion that transfers heat from the head portion to the adhesive film, and a suction device having a plurality of suction hoses provided around the body portion, each extending toward the gap between the stacked first and second semiconductor chips and sucking up an adhesive material overflowing from between the first and second semiconductor chips through vacuum pressure.

Description

Technology Field

[0001] The present invention relates to a semiconductor chip bonding apparatus and a semiconductor chip bonding method, and more specifically, to a semiconductor chip bonding apparatus for stacking a plurality of different semiconductor chips and a semiconductor chip bonding method using the same. Background Technology

[0002] In the thermal compression bonding process for stacking multiple semiconductor chips, adhesive materials such as non-conductive films (NCF) are used between the chips. During the bonding process, the adhesive material can overflow from between the chips and seep onto the upper surface of the upper chip, causing cracks and interfering with adhesion (non-wet). If foil is used to prevent the adhesive material from seeping onto the upper surface of the upper chip, it leads to increased process time and costs due to the time required for foil replacement. The problem to be solved

[0003] One objective of the present invention is to provide a semiconductor chip bonding device comprising a plurality of suction hoses for sucking up an adhesive material to prevent the adhesive material from flowing into the upper surface of an upper semiconductor chip.

[0004] Another objective of the present invention is to provide a semiconductor chip bonding method using the semiconductor chip bonding device. means of solving the problem

[0005] A semiconductor chip bonding device according to exemplary embodiments for achieving one objective of the present invention comprises: a substrate stage for supporting a second semiconductor chip attached to a first semiconductor chip via an adhesive film; a bonding head having a body portion, a head portion provided at the bottom of the body portion and contacting the upper surface of the second semiconductor chip to apply pressure in a vertical direction, and a heating portion that transfers heat from the head portion to the adhesive film; and a suction device having a plurality of suction hoses provided around the body portion, each extending toward the gap between the stacked first and second semiconductor chips and sucking up an adhesive material overflowing from between the first and second semiconductor chips through vacuum pressure.

[0006] A semiconductor chip bonding device according to exemplary embodiments for achieving another objective of the present invention comprises: a substrate stage for supporting a second semiconductor chip attached to a first semiconductor chip via an adhesive material; a bonding head having a body portion that moves on the substrate stage, a head portion provided at the bottom of the body portion for contacting the upper surface of the second semiconductor chip and applying pressure in a vertical direction, a heating portion for raising the temperature of the head portion, and a cooling portion for lowering the temperature of the head portion to cure the adhesive material between the first and second semiconductor chips; and a plurality of suction hoses each extending toward the gap between the stacked first and second semiconductor chips from the outer surface of the body portion and having a suction port that is inclined at a preset angle to suck up the adhesive material overflowing from the gap between the first and second semiconductor chips through vacuum pressure applied from a pump. Effects of the invention

[0007] According to exemplary embodiments, a semiconductor chip bonding device may include a substrate stage for supporting a second semiconductor chip attached to a first semiconductor chip via an adhesive film, a bonding head having a body portion movably provided on the substrate stage, a head portion provided at the bottom of the body portion and pressurizing in a vertical direction in contact with the upper surface of the second semiconductor chip, and a heating portion that transfers heat from the head portion to the adhesive film, and a suction device having a plurality of suction hoses provided around the body portion, each extending toward the gap between the stacked first and second semiconductor chips and sucking up an adhesive material overflowing from between the first and second semiconductor chips through vacuum pressure.

[0008] Accordingly, the suction device can suck up the adhesive material that has flowed in excess and overflowed between the first and second semiconductor chips through the suction hoses. Since the suction hoses absorb the overflowing adhesive material, the inflow of the adhesive material to the upper surface of the second semiconductor chip placed on the first semiconductor chip can be prevented. When the inflow of the adhesive material to the upper surface of the second semiconductor chip is prevented, non-wet adhesion interference with other semiconductor devices placed on the second semiconductor chip can be prevented, and the problem of the adhesive material crystallizing at an incorrect location and causing cracks in the semiconductor chips can be prevented. Furthermore, since a foil is not used to prevent the adhesive material from encroaching on the upper surface of the second semiconductor chip, problems such as increased process time and increased costs due to the replacement time of the foil can be prevented.

[0009] However, the effects of the present invention are not limited to the effects mentioned above and may be extended in various ways without departing from the spirit and scope of the present invention. Brief explanation of the drawing

[0010] FIG. 1 is a cross-sectional view showing a semiconductor chip bonding apparatus according to exemplary embodiments. Figure 2 is an enlarged cross-sectional view showing part A of Figure 1. FIG. 3 is a plan view showing an arrangement of suction hoses provided on semiconductor chips. FIGS. 4 to 12 are cross-sectional views illustrating a semiconductor chip bonding method using the semiconductor chip bonding apparatus of FIG. 1 according to exemplary embodiments. Specific details for implementing the invention

[0011] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0012] FIG. 1 is a cross-sectional view showing a semiconductor chip bonding apparatus according to exemplary embodiments. FIG. 2 is an enlarged cross-sectional view showing part A of FIG. 1. FIG. 3 is a plan view showing an arrangement of suction hoses provided on semiconductor chips.

[0013] Referring to FIGS. 1 to 3, a semiconductor chip bonding device (10) may include a substrate stage (100) on which semiconductor chips (500, 600) are placed, a bonding head (200) that moves on the substrate stage (100), a suction device (300) that is provided on the bonding head (200), and a controller (400) that electrically controls the bonding head (200) and the suction device (300). The semiconductor chip bonding device (10) may further include a transfer device (110) that moves the bonding head (200) and the suction device (300) on the substrate stage (100). The semiconductor chip bonding device (10) may further include a sensor (410) for acquiring data on the state of an adhesive material (710) provided between the semiconductor chips (500, 600). A semiconductor chip bonding device (10) can perform a bonding process to combine multiple semiconductor devices.

[0014] In exemplary embodiments, the substrate stage (100) may place semiconductor devices on its upper surface. The substrate stage (100) may be provided below the bonding head (200). The semiconductor devices may include a plurality of semiconductor chips. The semiconductor devices may include a first semiconductor chip (500) and a second semiconductor chip (600) mounted on the first semiconductor chip (500). The substrate stage (100) may support the second semiconductor chip (600) attached to the first semiconductor chip (500) via an adhesive film.

[0015] For example, the semiconductor device may include a carrier substrate, a printed circuit board (PCB), a lead frame, etc. The first and second semiconductor chips (500, 600) may each include an integrated circuit chip completed by performing semiconductor manufacturing processes. Each of the semiconductor chips may include, for example, a memory chip or a logic chip, etc.

[0016] Below, we will first describe the first semiconductor chip (500).

[0017] A first semiconductor chip (500) may include a first substrate (510) having a first upper surface (502) and a first lower surface (504) opposite each other, a first bonding pad (520) provided on the first lower surface (504), a first bonding pad (530) provided on the first upper surface (502), and a first conductive bump (540) provided on the first bonding pad (520). Additionally, the first semiconductor chip (500) may further include a first through electrode (550) penetrating the first substrate (510).

[0018] The first upper surface (502) of the first substrate (510) may be an inactive surface, and the first lower surface (504) may be an active surface. Circuit patterns may be provided on the first lower surface (504) of the first substrate (510). The first lower surface (504) may be a front side surface where the circuit patterns are formed, and the first upper surface (502) may be a back side surface. The circuit patterns may include transistors, diodes, etc. The circuit patterns may constitute circuit elements. Accordingly, the first semiconductor chip (500) may be a semiconductor device having a plurality of circuit elements formed inside it.

[0019] In exemplary embodiments, a first active layer may be provided on the first lower surface (504) of the first substrate (510). The first active layer may include an insulating film and a plurality of redistributions provided within the insulating film. The redistributions may be connected to one side of the first through electrode (550). The first coupling pad (520) may be connected to the redistributions that are electrically connected to the first through electrode (550). The insulating film may include silicon oxide, carbon-doped silicon oxide, silicon carbonitride (SiCN), etc.

[0020] A first conductive bump (540) may be provided on the first coupling pad (520). The first conductive bump (540) may provide an electrical passage for electrically connecting the first semiconductor chip (500) to another semiconductor device. The first conductive bump (540) may mount the first semiconductor chip (500) on the other semiconductor device. For example, the first conductive bump (540) may include a microbump (uBump).

[0021] The first bonding pad (530) is formed on the first upper surface (502) of the first substrate (510) and can be electrically connected to the first through electrode (550). The first bonding pad (530) can be electrically connected to the first through electrode (550) on the other side opposite to the one side of the first through electrode (550).

[0022] The first through electrode (550) can penetrate the first substrate (510) in a vertical direction. One end of the first through electrode (550) can be electrically connected to the rewiring. The other end of the first through electrode (550) can be provided to be exposed to the first upper surface (502) of the first substrate (510). The first through electrode (550) can be electrically connected to the first bonding pad (530) through the exposed other end.

[0023] In exemplary embodiments, the second semiconductor chip (600) may include a second substrate (610), a second bonding pad (630) provided on a second upper surface (602) of the second substrate (610), a second bonding pad (620) provided on a second lower surface (604) of the second substrate (610), and a second conductive bump (640) provided on the second bonding pad (620). The second semiconductor chip (600) may further include a second through electrode (650) penetrating the second substrate (610) in the vertical direction.

[0024] The second lower surface (604) of the second substrate (610) may be positioned to face the first upper surface (502) of the first substrate (510). The second conductive bump (640) of the second semiconductor chip (600) may be directly bonded to the first bonding pad (530) of the first semiconductor chip (500). The second semiconductor chip (600) may be mounted on the first semiconductor chip (500) by a flip chip bonding method. The second bonding pad (620) of the second semiconductor chip (600) may be electrically connected to the first bonding pad (530) of the first semiconductor chip (500) by the second conductive bump (640).

[0025] An adhesive member (700) may be provided between the first and second semiconductor chips (500, 600). The adhesive member (700) may include the adhesive film. The adhesive member (700) may be underfilled between the first and second semiconductor chips (500, 600) to reinforce the gap between the first and second semiconductor chips (500, 600). For example, the adhesive member (700) may include a non-conducting film (NCF) material. The adhesive member (700) may include a die attach film (DAF), an epoxy molding compound (EMC), an epoxy resin, a UV resin, a polyurethane resin, a silicone resin, or a silica filler.

[0026] In the present embodiment, the semiconductor devices as a multi-chip package are exemplified as including first and second semiconductor chips (500, 600). However, they are not limited thereto, and for example, the semiconductor device may include 4, 8, 12, or 16 stacked semiconductor chips.

[0027] In exemplary embodiments, the bonding head (200) may be positioned on the substrate stage (100). The bonding head (200) may be moved on the substrate stage (100) by a transfer device (110). The bonding head (200) may move on the substrate stage (100) in a first horizontal direction (X direction), a second horizontal direction (Y direction) orthogonal to the first horizontal direction, and a vertical direction (Z direction) orthogonal to the first and second horizontal directions. The bonding head (200) may move on the substrate stage (100) and stack the plurality of semiconductor chips together.

[0028] A bonding head (200) may include a body portion (210), a head portion (220) provided on the lower side of the body portion (210), a heating portion (230) provided on the head portion (220) to transfer heat to the head portion (220), and a heat transfer block (250) that transfers the heat from the heating portion (230) to the head portion (220). The bonding head (200) may further include a heat blocking block (240) provided on the heating portion (230) to block the heat generated from the heating portion (230). The bonding head (200) may further include a cooling portion for cooling the head portion (220) through a cooling source.

[0029] The body portion (210) may provide a receiving space for accommodating a heating portion (230), a heat transfer block (250), and a heat blocking block (240). The body portion (210) may secure an intake device (300) to its outer surface. The upper surface of the body portion (210) may be coupled with a conveyor (110). The body portion (210) may move in the first and second horizontal directions and the vertical direction by means of the conveyor (110) provided on the upper surface.

[0030] For example, the body portion (210) may include a columnar shape such as a cylinder, a rectangular column, etc. The body portion (210) may include a square columnar shape having four sides. The body portion (210) may include aluminum oxide (Al2O3).

[0031] The head portion (220) may be exposed from the lower surface of the body portion (210). The head portion (220) may be coupled to the lower surface of the body portion (210). The head portion (220) may be provided on the lower surface of the heat transfer block (250). The area of ​​the upper surface of the head portion (220) may be smaller than the area of ​​the lower surface of the heat transfer block (250). The area of ​​the lower surface of the head portion (220) may be larger than or equal to the area of ​​the upper surface of the semiconductor chip to be picked up. The shape of the lower surface of the head portion (220) may correspond to the shape of the upper surface of the semiconductor chip to be picked up. The head portion (220) may adsorb the semiconductor chip to the lower surface through vacuum pressure provided from a vacuum pump.

[0032] The heating unit (230) can transfer the heat to the head unit (220) for bonding the semiconductor chips (500, 600) together. The heating unit (230) may be provided on the lower surface of the heat blocking block (240). The heating unit (230) may be provided on the upper surface of the heat transfer block (250). The heating unit (230) may be provided between the heat blocking block (240) and the heat transfer block (250) to transfer the heat in a unidirectional manner.

[0033] Through the heat of the heating unit (230), the second conductive bump (640) of the second semiconductor chip (600) can be bonded to the first bonding pad provided on the upper surface of the first semiconductor chip (500). Through the heat of the heating unit (230), the adhesive material (710) can spread between the first and second semiconductor chips (500, 600). For example, the heating unit (230) may include a rectangular plate. For example, the heating unit (230) may include a ceramic heater including an electric resistance heating wire. The heating unit (230) may include a thermally conductive material.

[0034] A heat block (240) may be provided on one side of the heating unit (230). The heat block (240) may include an insulating material. The heat block (240) can block the heat generated from the heating unit (230) to protect electronic devices, etc. provided in the receiving space of the bonding head (200) from the heat. The heat block (240) can block the heat generated from the heating unit (230) and guide the heat to the heat transfer block (250). The heat block (240) can increase the bonding efficiency of semiconductor chips (500, 600) by moving the heat in the unidirectional direction.

[0035] A heat transfer block (250) may be provided on the other side opposite to the one side of the heating unit (230). The heat transfer block (250) may transfer the heat generated from the heating unit (230) to the head unit (220). The heat transfer block (250) may include the thermal conductive material. The thermal conductive material may include stainless steel, copper, aluminum, etc.

[0036] In exemplary embodiments, a controller (400) may be provided on the bonding head (200). The controller (400) may control the direction of movement of the bonding head (200) through the transfer device (110). The controller (400) may transmit and receive electronic signals to and from all devices for performing the bonding process of bonding semiconductor chips (500, 600) together. The controller (400) may control the bonding head (200), the suction device (300), and the sensor (410) to adsorb the second semiconductor chip (600) and adhere it to the first semiconductor chip (500).

[0037] The controller (400) may be provided on the upper surface of the body part (210) or on the inner side of the body part (210). The controller (400) can control the bonding head (200) and the suction device (300), respectively. The controller (400) is electrically connected to the vacuum pump and can adsorb the second semiconductor chip (600) to the lower surface of the head part (220).

[0038] The controller (400) is electrically connected to the heating unit (230) and can control the temperature of the heating unit (230). The controller (400) is electrically connected to the cooling unit and can cool the head unit (220) through the cooling source. The controller (400) can receive the data on the state of the adhesive material (710) from the sensor (410) and can control the suction device (300) based on the data.

[0039] In exemplary embodiments, the suction device (300) may include a suction pump (310) that applies the vacuum pressure, a plurality of suction hoses (320) extending from the suction pump (310), and a storage unit that stores the adhesive material (710) sucked in through the suction hoses (320). The suction device (300) may be provided on the outer surface of the body part (210). The suction device (300) may suck in at least a portion of the adhesive material (710) that overflows between the first and second semiconductor chips (500, 600) to form a suitable adhesive member (700) between the first and second semiconductor chips (500, 600). The suction device (300) may increase the reliability of the bonding process that attaches the first and second semiconductor chips (500, 600) to each other.

[0040] The suction pump (310) can suck up an adhesive material (710) that bonds the first and second semiconductor chips (500, 600) to each other between the first and second semiconductor chips (500, 600). The adhesive material (710) can be cured between the first and second semiconductor chips (500, 600) to form an adhesive member (700). The suction pump (310) can provide the vacuum pressure to the suction hoses (320) to absorb the adhesive material (710). The suction pump (310) may be provided on the outer surface of the body part (210).

[0041] The suction hoses (320) may receive the vacuum pressure from the suction pump (310). The suction hoses (320) may be provided spaced apart from the body portion (210). The suction hoses (320) may extend from the suction pump (310) toward the outer surface between the first and second semiconductor chips (500, 600). The suction pump (310) may suck up the adhesive material (710) overflowing from the gap between the first and second semiconductor chips (500, 600) through the vacuum pressure.

[0042] One end of the suction hose (320) may be connected to a suction pump (310) to receive the vacuum pressure. The suction hose (320) may be provided with a suction port (322) for sucking the adhesive material (710) at the other end opposite to the one end of the suction hose (320). The suction port (322) may be provided facing the gap between the first and second semiconductor chips (500, 600). For example, the shape of the suction port (322) may include a circular, elliptical, square, etc.

[0043] Suction hoses (320) may be positioned around the respective corners of the stacked first and second semiconductor chips (500, 600) on the outer side of the body portion (210). The suction hoses (320) may suck up the adhesive material (710) overflowing from the respective corners of the first and second semiconductor chips (500, 600). For example, the number of suction hoses (320) may be within the range of 4 to 16. The same number of suction hoses (320) may be positioned at each corner of the semiconductor chips (500, 600).

[0044] The suction hoses (320) may include first to fourth hoses (320a, 320b, 320c, 320d). The first to fourth hoses (320a, 320b, 320c, 320d) may be arranged along the rectangular shape of the semiconductor chip. When viewed in a plan view, the first to fourth hoses (320a, 320b, 320c, 320d) may be arranged adjacent to the sides of each of the stacked first and second semiconductor chips (500, 600). When viewed in the plan view, the horizontal length of each of the first to fourth hoses (320a, 320b, 320c, 320d) may be less than or equal to the length of the side of each of the first and second semiconductor chips (500, 600).

[0045] One end of each of the first to fourth hoses (320a, 320b, 320c, 320d) is connected to a suction pump (310), and the controller (400) can control the suction pump (310) so that at least one of the first to fourth hoses (320a, 320b, 320c, 320d) absorbs an adhesive material (710). Each of the first to fourth hoses (320a, 320b, 320c, 320d) may be provided with first to fourth suction ports (322a, 322b, 322c, 322d). The controller (400) can control the opening and closing of the first to fourth suction ports (322a, 322b, 322c, 322d) or gas passages formed in the first to fourth hoses (320a, 320b, 320c, 320d) so that at least one of the first to fourth hoses (320a, 320b, 320c, 320d) absorbs the adhesive material (710).

[0046] In this embodiment, the suction hoses (320) are exemplified as including first to fourth hoses (320a, 320b, 320c, 320d). However, they are not limited thereto, and for example, the suction hoses (320) may include eight, twelve, or sixteen hoses.

[0047] The other end of the suction hose (320), opposite to the one end mentioned above, may be tilted at a preset angle (D1) with respect to the upper surface of the substrate stage (100). The suction hose (320) may position the suction port (322) toward the gap between the first and second semiconductor chips (500, 600) through the preset angle (D1). The preset angle (D1) of the suction hose (320) may change during the bonding process. As the preset angle (D1) of the suction hose (320) changes, the direction of the suction port (322) may change toward the adhesive member (700). For example, the preset angle (D1) may be within the range of 10 to 80 degrees.

[0048] The suction hose (320) can move in first and second horizontal directions (X direction, Y direction) along the adhesive material (710) exposed from the gap between the first and second semiconductor chips (500, 600). The suction hose (320) can reciprocate along the first and second horizontal directions (X direction, Y direction) and can move along the sides of the first and second semiconductor chips (500, 600) and absorb the overflowing adhesive material (710).

[0049] The suction hose (320) may include an insulating member. The suction hose (320) may be resistant to the heat generated from the heating unit (230) through the insulating member. For example, the insulating member may include polytetrafluoroethylene (PTFE), polyether ether ketone (PEEK), polyether ketone (PEK), polyphenylene sulfide (PPS), and silicon (Si).

[0050] In exemplary embodiments, the sensor (410) can acquire data on the state of the adhesive material (710) provided between the first and second semiconductor chips (500, 600). The sensor (410) can measure the degree to which the adhesive member (700) overflows from the gap between the first and second semiconductor chips (500, 600). For example, the sensor (410) may be provided on the suction hose (320). The sensor (410) may be provided on the suction hose (320) toward the adhesive material (710) between the first and second semiconductor chips (500, 600).

[0051] The sensor (410) can transmit the data regarding the state of the adhesive material (710) to the controller (400). The sensor (410) can transmit the data regarding the degree of overflow of the measured adhesive member (700) to the controller (400). The controller (400) can control the vacuum pressure of the suction pump (310) through the data. The controller (400) can control the position of the suction hose (320) through the data. The suction device (300) can suck up the adhesive material (710) through the measurement value from the sensor (410) so that an adhesive member (700) having a preset shape is formed between the first and second semiconductor chips (500, 600). The suction device (300) can suck up the adhesive material (710) so that the adhesive material (710) does not overflow between the first and second semiconductor chips (500, 600) through the measurement value from the sensor (410).

[0052] For example, the sensor (410) can acquire reflected radio waves generated when radio waves collide with an object. The sensor (410) can recognize the state of the adhesive material (710) by measuring the distance from the location of the sensor (410) to the adhesive material (710) between the first and second semiconductor chips (500, 600). The sensor (410) may be a sensor that measures distance and detects objects using light or wavelengths.

[0053] As described above, the adhesive material (710) that is excessively introduced and overflows between the first and second semiconductor chips (500, 600) can be sucked in by the suction device (300) through the suction hoses (320). Since the suction hoses (320) absorb the overflowing adhesive material (710), the introduction of the adhesive member (700) into the upper surface of the second semiconductor chip (600) placed on the first semiconductor chip (500) can be prevented. When the introduction of the adhesive member (700) into the upper surface of the second semiconductor chip (600) is prevented, non-wet adhesion with other semiconductor devices placed on the second semiconductor chip (600) can be prevented, and the problem of the adhesive member (700) crystallizing in the wrong location and causing cracks in the semiconductor chips (500, 600) can be prevented. In addition, since a foil is not used to prevent intrusion of the adhesive member (700), problems such as increased process time and increased cost due to the replacement time of the foil can be prevented.

[0054] Below, a semiconductor chip bonding method using the semiconductor chip bonding device of FIG. 1 will be described in detail.

[0055] FIGS. 4 to 12 are cross-sectional views illustrating a semiconductor chip bonding method using the semiconductor chip bonding apparatus of FIG. 1 according to exemplary embodiments. FIGS. 6 to 8 are enlarged cross-sectional views illustrating part B of FIG. 5 during the process of bonding a semiconductor chip. FIG. 9 is a plan view illustrating the semiconductor chip bonding apparatus during the process in which the suction hoses of FIG. 5 absorb an adhesive material. FIGS. 10 and 11 are enlarged cross-sectional views illustrating part B of FIG. 5 during the process of bonding a semiconductor chip.

[0056] Referring to FIGS. 4 to 7, an adhesive material (710) is formed on the lower surface of the second semiconductor chip (600), and the second semiconductor chip (600) can be mounted on the first semiconductor chip (500).

[0057] In exemplary embodiments, the second semiconductor chip (600) may have a second upper surface (602) and a second lower surface (604) opposite each other. The second upper surface (602) of the second semiconductor chip (600) may be adsorbed to the lower surface of the head portion (220). The second semiconductor chip (600) may be adsorbed to the lower surface of the head portion (220) through vacuum pressure provided from a vacuum pump.

[0058] As illustrated in FIGS. 4 to 6, the first semiconductor chip (500) may have a first upper surface (502) and a first lower surface (504) opposite each other. The first semiconductor chip (500) may be placed on a substrate stage (100). A second semiconductor chip (600) may be placed on the first semiconductor chip (500) through a head portion (220) such that a plurality of second conductive bumps (640) are positioned on the first bonding pads (530) of the first semiconductor chip (500). The second semiconductor chip (600) adsorbed to the head portion (220) may be lowered in a vertical direction (Z direction) and placed on the first semiconductor chip (500).

[0059] An adhesive material (710) may be formed on the second lower surface (604) of the second semiconductor chip (600). An adhesive material (710) may be formed between the first and second semiconductor chips (500, 600). The adhesive material (710) may be cured between the first and second semiconductor chips (500, 600) to form an adhesive member (700). The adhesive member (700) may reinforce the gap between the first and second semiconductor chips (500, 600).

[0060] For example, the adhesive material (710) and the adhesive member (700) may include a non-conducting film (NCF) material. The adhesive material (710) and the adhesive member (700) may include a die attach film (DAF), an epoxy molding compound (EMC), an epoxy resin, a UV resin, a polyurethane resin, a silicone resin, and a silica filler.

[0061] As illustrated in FIG. 7, the second semiconductor chip (600) can be lowered in a vertical direction (Z direction) by the head portion (220) and mounted on the first upper surface (502) of the first semiconductor chip (500). An adhesive material (710) formed between the first and second semiconductor chips (500, 600) can be pressed by the second lower surface (604) of the second semiconductor chip (600). If an excess of adhesive material (710) is formed on the first semiconductor chip (500), the adhesive material (710) may overflow from the gap between the first and second semiconductor chips (500, 600). The adhesive material (710) may flow into the second upper surface (602) of the second semiconductor chip (600).

[0062] When the adhesive material (710) is introduced into the second upper surface (602) of the second semiconductor chip (600), the adhesive material (710) may be cured on the second upper surface (602) of the second semiconductor chip (600) to form an adhesive member (700). When the adhesive material (710) is cured on the second upper surface (602) of the second semiconductor chip (600), a crack may be formed on the second semiconductor chip (600) or on the third semiconductor chip by the third semiconductor chip mounted on the second semiconductor chip (600). When the adhesive material (710) is introduced into the second bonding pad (630) of the second semiconductor chip (600), it may hinder the third conductive bump of the third semiconductor chip from being adhered to the second bonding pad (630). When an adhesive material (710) is introduced into the second upper surface (602) of the second semiconductor chip (600), it can cause an adhesion interference (non-wet) between the semiconductor chips.

[0063] Referring to FIGS. 8 and 9, an adhesive material (710) between the first and second semiconductor chips (500, 600) can be absorbed through the suction hose (320) of the suction device (300). An adhesive material (710) overflowing between the first and second semiconductor chips (500, 600) can be absorbed through the suction hose (320).

[0064] The second semiconductor chip (600) can be mounted on the first semiconductor chip (500) by a flip chip bonding method. Heat emitted through the heating portion (230) of the bonding head (200) can be diffused between the first and second semiconductor chips (500, 600). By the heat, the second conductive bumps (640) of the second semiconductor chip (600) can be bonded to the first bonding pads (530) on the first semiconductor chip (500), respectively.

[0065] The adhesive material (710) formed between the first and second semiconductor chips (500, 600) can maintain a fluidized state through the heat released through the heating part (230) of the bonding head (200). The adhesive material (710) can maintain the fluidized state through the heat and flow between the first and second semiconductor chips (500, 600).

[0066] As illustrated in FIG. 8, the second conductive bumps (640) of the second semiconductor chip (600) can be bonded to the first bonding pads (530) of the first semiconductor chip (500). The second conductive bumps (640) can each be fixed to the first bonding pads (530) of the first semiconductor chip (500) through a reflow process. The reflow process may be a technical process that stably bonds the second conductive bumps (640) to the first semiconductor chip (500) by applying high-temperature heat (H).

[0067] The suction hoses (320) can absorb adhesive material (710) overflowing from the gap between the first and second semiconductor chips (500, 600). The suction hoses (320) can absorb adhesive material (710) that is oversupplied between the first and second semiconductor chips (500, 600). The suction hoses (320) can absorb adhesive material (710) so that there is an appropriate amount between the first and second semiconductor chips (500, 600). The suction hoses (320) can receive the vacuum pressure from the suction pump (310). The adhesive material (710) sucked from the suction hoses (320) can be stored in a storage unit.

[0068] As illustrated in FIG. 9, the suction hoses (320) can move in first and second horizontal directions (X direction, Y direction) along the adhesive material (710) exposed from the gap between the first and second semiconductor chips (500, 600). Alternatively, the suction hoses (320) can be fixedly positioned at the center of the corners of the stacked first and second semiconductor chips (500, 600), respectively.

[0069] The first and second hoses (320a, 320b) facing each other can reciprocate along the second horizontal direction (Y direction). The first and second hoses (320a, 320b) can reciprocate along the second horizontal direction (Y direction) and can absorb adhesive material (710) that overflows while moving along the sides of the first and second semiconductor chips (500, 600) through the first and second suction ports (322a, 322b). The third and fourth hoses (320c, 320d) facing each other can reciprocate along the first horizontal direction (X direction). The first and second hoses (320c, 320d) can reciprocate along the first horizontal direction (X direction) and move along the sides of the first and second semiconductor chips (500, 600) and can absorb the overflowing adhesive material (710) through the third and fourth suction ports (322c, 322d).

[0070] Referring to FIGS. 10 to 12, the adhesive material (710) can be cured between the first and second semiconductor chips (500, 600), and the bonding head (200) can move in a vertical direction (Z direction) from the first and second semiconductor chips (500, 600).

[0071] As illustrated in FIG. 10, the suction hoses (320) can stop absorbing the adhesive material (710) when an appropriate amount of adhesive material (710) is formed between the first and second semiconductor chips (500, 600). The suction hoses (320) can prevent the adhesive material (710) from flowing into the second upper surface (602) of the second semiconductor chip (600) by leaving the appropriate amount of adhesive material (710) between the first and second semiconductor chips (500, 600).

[0072] The sensor (410) can obtain data on the state of the adhesive material (710) provided between the first and second semiconductor chips (500, 600). The sensor (410) can measure the degree to which the adhesive member (700) overflows from the gap between the first and second semiconductor chips (500, 600). The suction device (300) can stop the suction if the adhesive member (700) having a preset capacity is formed between the first and second semiconductor chips (500, 600) based on the data measured by the sensor (410).

[0073] When an adhesive member (700) having a preset capacity is formed between the first and second semiconductor chips (500, 600), the bonding head (200) can provide a cooling source to the head portion (220) through the cooling portion and cool the head portion (220). Through the cooling source, the adhesive material (710) can be cured to form the adhesive member (700). Through the cooling source, the second conductive bumps (640) each provided on the second bonding pads (620) of the second semiconductor chip (600) can be bonded to the first bonding pads (530) each provided on the first upper surface (502) of the first semiconductor chip (500).

[0074] As illustrated in FIGS. 11 and 12, when the first and second semiconductor chips (500, 600) are bonded together, the bonding head (200) can be raised in the vertical direction (Z direction) from the first and second semiconductor chips (500, 600) by the transfer device (110). The semiconductor chip bonding device (10) can block the vacuum pressure provided to the suction pump (310) of the suction device (300).

[0075] Although the present invention has been described above with reference to embodiments thereof, those skilled in the art will understand that various modifications and changes can be made to the invention without departing from the spirit and scope of the invention as described in the following claims. Explanation of the symbols

[0076] 10: Semiconductor chip bonding device 100: Substrate stage 110: Transfer device 200: Bonding head 210: Body part 220: Head part 230: Heating section 240: Heat block 250: Heat transfer block 300: Suction device 310: Suction pump 320: Suction hose 322: Intake 400: Controller 410: Sensor 500: First semiconductor chip 510: First substrate 520: First coupling pad 530: 1st bonding pad 540: 1st conductive bump 550: First penetrating electrode 600: Second semiconductor chip 610: Second substrate 620: Second coupling pad 630: Second bonding pad 640: Second conductive bump 650: Second penetrating electrode 700: Adhesive member 710: Adhesive material

Claims

Claim 1 A semiconductor chip bonding device comprising: a substrate stage for supporting a second semiconductor chip attached to a first semiconductor chip via an adhesive film; a bonding head provided to be movable on the substrate stage and having a body portion, a head portion provided at the bottom of the body portion and contacting the upper surface of the second semiconductor chip to apply pressure in a vertical direction, and a heating portion that transfers heat from the head portion to the adhesive film; and a suction device provided around the body portion and having a plurality of suction hoses that extend toward the gap between the first and second semiconductor chips, respectively, and suck up adhesive material overflowing from between the first and second semiconductor chips through vacuum pressure. Claim 2 A semiconductor chip bonding device according to claim 1, wherein the bonding head further comprises a heat blocking block provided on the heating part to block the heat emitted from the heating part from moving to the body part. Claim 3 In claim 1, the adhesive film comprises a non-conductive film (NCF), forming a semiconductor chip bonding device. Claim 4 A semiconductor chip bonding device according to claim 1, wherein the end of the suction hose extending toward the gap between the first and second semiconductor chips is inclined at a preset angle. Claim 5 A semiconductor chip bonding device according to claim 1, wherein the suction hoses are disposed around the respective corners of the stacked first and second semiconductor chips on the outer surface of the body part. Claim 6 A semiconductor chip bonding device according to claim 1, wherein the suction hoses are each movable horizontally along the adhesive material exposed from the gap between the first and second semiconductor chips. Claim 7 A semiconductor chip bonding device according to claim 1, wherein the number of suction hoses is within the range of 4 to 16. Claim 8 A semiconductor chip bonding device according to claim 1, further comprising a sensor for measuring the amount of adhesive material overflowing from the gap between the first and second semiconductor chips, and the suction device sucking up the adhesive material so as not to overflow between the first and second semiconductor chips through the measurement value from the sensor. Claim 9 A semiconductor chip bonding device according to claim 1, wherein the suction hose comprises at least one selected from polytetrafluoroethylene (PTFE), polyether ether ketone (PEEK), polyether ketone (PEK), polyphenylene sulfide (PPS), and silicon (Si). Claim 10 A semiconductor chip bonding device comprising: a substrate stage for supporting a second semiconductor chip attached to a first semiconductor chip via an adhesive material; a bonding head that moves on the substrate stage and has a body portion, a head portion provided at the bottom of the body portion for contacting the upper surface of the second semiconductor chip and applying pressure in a vertical direction, a heating portion for raising the temperature of the head portion, and a cooling portion for lowering the temperature of the head portion to cure the adhesive material between the first and second semiconductor chips; and a plurality of suction hoses each extending toward the gap between the first and second semiconductor chips from the outer surface of the body portion and having a suction port inclined at a preset angle to suck up the adhesive material overflowing from the gap between the first and second semiconductor chips through vacuum pressure applied from a pump.

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