Photoelectric conversion element, light detection device, light detection system, electronic apparatus, and moving body

Abstract

A photoelectric conversion element having higher functionality is provided. This photoelectric conversion element has a first photoelectric conversion unit that detects light in a first wavelength range and performs photoelectric conversion, a second photoelectric conversion unit that detects light in a second wavelength range, performs photoelectric conversion, and acquires distance information of an object, and an optical filter disposed between the first photoelectric conversion unit and the second photoelectric conversion unit that transmits light in the second wavelength range more easily than light in the first wavelength range. The first photoelectric conversion unit includes a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked, and a charge accumulation electrode disposed spaced apart from the first electrode and disposed opposite the first photoelectric conversion layer through an insulating layer.

Description

Technology Field

[0001] The present disclosure relates to a photoelectric conversion element that performs photoelectric conversion, and a photodetector device, photodetector system, electronic device, and mobile body equipped with the same. Background Technology

[0002] To date, a solid-state imaging device has been proposed having a stacked structure of a first photoelectric conversion region that primarily receives visible light and performs photoelectric conversion, and a second photoelectric conversion region that primarily receives infrared light and performs photoelectric conversion (see, for example, Patent Document 1). Prior art literature

[0003] Patent Document 1: Japanese Patent Publication No. 2017-208496 The problem to be solved

[0004] However, there is a need for functional improvement in solid-state imaging devices.

[0005] Therefore, it is desirable to provide a photoelectric conversion device with high functionality. means of solving the problem

[0006] A photoelectric conversion element as one embodiment of the present disclosure comprises a semiconductor substrate, a first photoelectric conversion unit provided on the semiconductor substrate and performing photoelectric conversion by detecting light of a first wavelength range including a visible light range, a second photoelectric conversion unit provided within the semiconductor substrate at a position overlapping the first photoelectric conversion unit in the thickness direction of the semiconductor substrate and performing photoelectric conversion by detecting light of a second wavelength range including an infrared light range, and an optical filter provided on the opposite side of the first photoelectric conversion unit and the second photoelectric conversion unit and transmitting light of a predetermined color component included in a predetermined wavelength range. The first photoelectric conversion unit comprises a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked, and a charge accumulation electrode disposed spaced apart from the first electrode and disposed opposite to the first photoelectric conversion layer through an insulating layer. Brief explanation of the drawing

[0008] FIG. 1 is a schematic diagram illustrating an example of a solid-state imaging device according to a first embodiment of the present disclosure. FIG. 2A is a cross-sectional schematic diagram illustrating an example of the schematic configuration of an imaging element applied to the pixel shown in FIG. 1. FIG. 2B is a schematic cross-sectional view illustrating the penetrating electrode and its surroundings as illustrated in FIG. 2A in enlarged form. FIG. 2C is a schematic plan view illustrating the penetrating electrode and its surroundings as illustrated in FIG. 2A in enlarged view. FIG. 2D is a schematic cross-sectional view illustrating an example of a schematic configuration of an imaging element as a modified example applied to the pixel shown in FIG. 1. FIG. 3 is a circuit diagram illustrating an example of a reading circuit of an iTOF sensor unit illustrated in FIG. 2A. FIG. 4 is a circuit diagram illustrating an example of a readout circuit of an organic photoelectric converter shown in FIG. 2A. FIG. 5 is a schematic diagram illustrating an example of an arrangement state of multiple pixels in the pixel portion illustrated in FIG. 1. FIG. 6 is a schematic diagram illustrating a variation of the array state of multiple pixels shown in FIG. 5. FIG. 7 is a schematic cross-sectional view illustrating an example of an imaging element according to a second embodiment of the present disclosure. FIG. 8 is a schematic diagram illustrating an example of the pixel arrangement state shown in FIG. 7. FIG. 9 is a schematic diagram illustrating a first variation of the pixel arrangement state shown in FIG. 7. FIG. 10 is a schematic diagram illustrating a second variation of the pixel arrangement state illustrated in FIG. 7. FIG. 11 is a schematic diagram illustrating a third variation of the pixel arrangement state shown in FIG. 7. FIG. 12 is a schematic cross-sectional view illustrating an example of an imaging element according to a third embodiment of the present disclosure. FIG. 13 is a schematic diagram illustrating an example of the pixel arrangement state shown in FIG. 12. FIG. 14 is a schematic cross-sectional view illustrating an example of an imaging element according to a fourth embodiment of the present disclosure. FIG. 15 is a schematic diagram illustrating an example of the arrangement state of pixels shown in FIG. 14. FIG. 16 is a schematic diagram illustrating a modified example of the pixel arrangement state shown in FIG. 14. FIG. 17 is a schematic cross-sectional view illustrating an example of an imaging element according to a fifth embodiment of the present disclosure. FIG. 18 is a schematic diagram illustrating an example of the pixel arrangement state shown in FIG. 17. FIG. 19 is a schematic diagram illustrating a first variation of the pixel arrangement state illustrated in FIG. 17. FIG. 20 is a schematic diagram illustrating a second variation of the pixel arrangement state illustrated in FIG. 17. FIG. 21A is a first schematic diagram illustrating a third variation of the pixel arrangement state illustrated in FIG. 17. FIG. 21B is a second schematic diagram illustrating a third variation of the pixel arrangement state illustrated in FIG. 17. FIG. 22 is a schematic cross-sectional view illustrating an example of an imaging element according to a sixth embodiment of the present disclosure. FIG. 23 is a schematic diagram illustrating an example of the pixel arrangement state shown in FIG. 22. FIG. 24 is a schematic diagram illustrating a modified example of the pixel arrangement state shown in FIG. 22. FIG. 25 is a schematic cross-sectional view illustrating an example of an imaging element according to a seventh embodiment of the present disclosure. FIG. 26 is a schematic cross-sectional view illustrating an example of an imaging element according to the eighth embodiment of the present disclosure. FIG. 27A is a characteristic diagram showing the light transmittance distribution of a dual bandpass filter in an imaging element shown in FIG. 26. FIG. 27B is a characteristic diagram showing the light transmittance distribution of a color filter in an imaging element shown in FIG. 26. FIG. 27C is a characteristic diagram showing the light transmittance distribution of an optical filter in an imaging element shown in FIG. 26. FIG. 27D is a characteristic diagram illustrating the wavelength dependence of the sensitivity of the organic photoelectric conversion layer and the wavelength dependence of the sensitivity of the photoelectric conversion region in the imaging element shown in FIG. 26, respectively. FIG. 28A is a characteristic diagram showing the light transmittance distribution of a dual bandpass filter in a modified example of the imaging element shown in FIG. 26. FIG. 28B is a characteristic diagram showing the light transmittance distribution of a color filter in a modified example of the imaging element shown in FIG. 26. FIG. 28C is a characteristic diagram showing the light transmittance distribution of an optical filter in a modified example of the imaging element shown in FIG. 26. FIG. 28D is a characteristic diagram showing the wavelength dependence of the sensitivity of the organic photoelectric conversion layer and the wavelength dependence of the sensitivity of the photoelectric conversion region, respectively, in a modified example of the imaging element shown in FIG. 26. FIG. 29 is a schematic cross-sectional view illustrating an example of an imaging element according to a ninth embodiment of the present disclosure. FIG. 30 is a schematic cross-sectional view illustrating an example of an imaging element according to a ninth embodiment of the present disclosure. FIG. 31 is a schematic diagram illustrating an example of the arrangement state of pixels shown in FIG. 29 and FIG. 30. FIG. 32A is a first schematic diagram illustrating a variation of the pixel arrangement state shown in FIG. 31. FIG. 32B is a second schematic diagram illustrating a variation of the pixel arrangement state shown in FIG. 31. FIG. 33A is a schematic cross-sectional view illustrating an enlarged view of a penetrating electrode and its periphery in an imaging element according to the 10th embodiment of the present disclosure. FIG. 33B is a schematic plan view illustrating an enlarged view of a penetrating electrode and its periphery in an imaging element according to the 10th embodiment of the present disclosure. FIG. 34A is an enlarged cross-sectional schematic diagram illustrating a detailed other configuration example of a penetrating electrode and its surroundings in an imaging element according to the 10th embodiment of the present disclosure. FIG. 34B is an enlarged plan schematic diagram illustrating a detailed other configuration example of a penetrating electrode and its surroundings in an imaging element according to the 10th embodiment of the present disclosure. FIG. 35 is a schematic cross-sectional view illustrating one example of the schematic configuration of an imaging element as a variation of the 10th embodiment of the present disclosure. FIG. 36A is a schematic diagram illustrating an example of the overall configuration of a photodetection system according to the first embodiment of the present disclosure. FIG. 36B is a schematic diagram illustrating an example of the circuit configuration of the photodetector system illustrated in FIG. 36A. FIG. 37 is a schematic diagram illustrating an overall configuration example of an electronic device. FIG. 38 is a block diagram illustrating an example of the schematic configuration of an in-body information acquisition system. FIG. 39 is a drawing illustrating an example of the schematic configuration of an endoscopic surgical system. FIG. 40 is a block diagram illustrating an example of the functional configuration of a camera head and a CCU. FIG. 41 is a block diagram illustrating an example of the schematic configuration of a vehicle control system. FIG. 42 is an explanatory diagram illustrating an example of the installation locations of an external information detection unit and an imaging unit. Specific details for implementing the invention

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In addition, the description will be carried out in the following order.

[0010] 1. First embodiment

[0011] An example of a solid-state imaging device comprising an organic photoelectric converter for obtaining visible light image information and an iTOF sensor for receiving infrared light to obtain distance information.

[0012] 2. Second embodiment

[0013] An example of a solid-state imaging device having four on-chip lenses, four color filters, and four charge accumulation electrodes for each photoelectric converter.

[0014] 3. Third embodiment

[0015] Example of a solid-state imaging device having 16 on-chip lenses, color filters, and charge accumulation electrodes (25) for each photoelectric conversion unit.

[0016] 4. Fourth embodiment

[0017] An example of a solid-state imaging device having four charge accumulation electrodes and four photoelectric converters for one on-chip lens and one color filter.

[0018] 5. Fifth embodiment

[0019] An example of a solid-state imaging device having four charge accumulation electrodes for one on-chip lens, one color filter, and one photoelectric converter.

[0020] 6. Sixth embodiment

[0021] An example of a solid-state imaging device having, for one photoelectric conversion unit, four on-chip lenses, four color filters, and 16 charge accumulation electrodes.

[0022] 7. Seventh embodiment

[0023] Example of a solid-state imaging device having an iTOF sensor unit having a charge retaining unit.

[0024] 8. Eighth embodiment

[0025] Example of a solid-state imaging device also equipped with a dual band pass filter.

[0026] 9. Ninth embodiment

[0027] Example of a solid-state imaging device having an inner lens or an optical waveguide.

[0028] 10. Tenth embodiment

[0029] Example of a solid-state imaging device having a metal layer shielding the area around a penetrating electrode.

[0030] 11. Eleventh embodiment

[0031] Example of a photodetection system equipped with a light-emitting device and a photodetection device.

[0032] 12. Examples of application to electronic devices

[0033] 13. Application Examples to In-Bodily Information Acquisition Systems

[0034] 14. Applications in Endoscopic Surgical Systems

[0035] 15. Examples of Application to Moving Objects

[0036] 16. Other Variations

[0037] <1. First Embodiment>

[0038] [Configuration of solid imaging device (1)]

[0039] (Complete composition example)

[0040] FIG. 1 illustrates an overall configuration example of a solid-state imaging device (1) according to one embodiment of the present disclosure. The solid-state imaging device (1) is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The solid-state imaging device (1) is configured to receive incident light (image light) from a subject through, for example, an optical lens system, convert the incident light formed on the imaging surface into an electrical signal on a pixel-by-pixel basis, and output it as a pixel signal. The solid-state imaging device (1) has, for example, a pixel portion (100) as an imaging area on a semiconductor substrate (11), and a vertical driving circuit (111), a column signal processing circuit (112), a horizontal driving circuit (113), an output circuit (114), a control circuit (115), and an input / output terminal (116) disposed in a peripheral area of ​​the pixel portion (100). This solid-state imaging device (1) is a specific example corresponding to the "photodetector device" of the present disclosure.

[0041] For example, the pixel section (100) has a plurality of pixels (P) arranged in a two-dimensional matrix shape. The pixel section (100) is provided with a plurality of pixel rows composed of a plurality of pixels (P) arranged in a horizontal direction (horizontal direction of the ground), for example, and a plurality of pixel columns composed of a plurality of pixels (P) arranged in a vertical direction (longitudinal direction of the ground). For example, in the pixel section (100), one pixel driving line (Lread) (row selection line and reset control line) is wired for each pixel row, and one vertical signal line (Lsig) is wired for each pixel column. The pixel driving line (Lread) transmits a driving signal for reading signals from each pixel (P). The ends of the plurality of pixel driving lines (Lread) are each connected to a plurality of output terminals corresponding to each pixel row of the vertical driving circuit (111).

[0042] The vertical driving circuit (111) is composed of a shift register or an address decoder, and is a pixel driving unit that drives each pixel (P) in the pixel unit (100), for example, in pixel row units. The signal output from each pixel (P) of the pixel row selected and scanned by the vertical driving circuit (111) is supplied to the column signal processing circuit (112) through each of the vertical signal lines (Lsig).

[0043] The column signal processing circuit (112) is configured by an amplifier or a horizontal selection switch provided for each vertical signal line (Lsig).

[0044] The horizontal driving circuit (113) is configured by a shift register or an address decoder, etc., and drives sequentially while scanning each horizontal selection switch of the column signal processing circuit (112). By the selection scanning by this horizontal driving circuit (113), the signal of each pixel (P) transmitted through each of the plurality of vertical signal lines (Lsig) is output to the horizontal signal line (121) in sequence and transmitted to the outside of the semiconductor substrate (11) through the horizontal signal line (121).

[0045] The output circuit (114) performs signal processing on signals sequentially supplied from each of the column signal processing circuits (112) through the horizontal signal line (121) and outputs them. For example, the output circuit (114) may perform only buffering, or it may perform black level adjustment, thermal deviation correction, and various digital signal processing.

[0046] The circuit portion comprising a vertical driving circuit (111), a column signal processing circuit (112), a horizontal driving circuit (113), a horizontal signal line (121), and an output circuit (114) may be formed directly on the semiconductor substrate (11) or provided on an external control IC. Additionally, the circuit portion may be formed on another substrate connected by a cable or the like.

[0047] The control circuit (115) receives data such as a clock or an operating mode commanded from outside the semiconductor substrate (11), and also outputs data such as internal information of the pixel (P) which is an imaging element. The control circuit (115) also has a timing generator that generates various timing signals, and performs driving control of peripheral circuits such as a vertical driving circuit (111), a column signal processing circuit (112), and a horizontal driving circuit (113) based on the various timing signals generated by the timing generator.

[0048] The input / output terminal (116) is used to exchange signals with the outside.

[0049] (Example of cross-sectional composition of pixel (P))

[0050] FIG. 2A schematically illustrates an example of a cross-sectional configuration in one pixel (P1) among a plurality of pixels (P) arranged in a matrix shape in a pixel section (100).

[0051] As illustrated in FIG. 2, the pixel (P1) is a so-called longitudinal spectral type imaging element having a structure in which, for example, one photoelectric conversion unit (10) and one organic photoelectric conversion unit (20) are stacked in the Z-axis direction, which is the thickness direction. The pixel (P1), which is an imaging element, is a specific example corresponding to the "photoelectric conversion element" of the present disclosure. The pixel (P1) also has an intermediate layer (40) provided between the photoelectric conversion unit (10) and the organic photoelectric conversion unit (20), and a multilayer wiring layer (30) provided on the side opposite to the organic photoelectric conversion unit (20) when viewed from the photoelectric conversion unit (10). Additionally, on the light incident side opposite to the photoelectric conversion unit (10) when viewed from the organic photoelectric conversion unit (20), for example, one encapsulation film (51), one color filter (52), one flattening film (53), and one on-chip lens (54) are sequentially stacked along the Z-axis direction starting from a position close to the organic photoelectric conversion unit (20). Furthermore, the encapsulation film (51) and the flattening film (53) may each be provided in common in a plurality of pixels (P).

[0052] (Photoelectric conversion unit (10))

[0053] The photoelectric conversion unit (10) is an indirect TOF (hereinafter referred to as iTOF) sensor that acquires a distance image (distance information) by, for example, Time-of-Flight (TOF). The photoelectric conversion unit (10) has, for example, a semiconductor substrate (11), a photoelectric conversion region (12), a fixed charge layer (13), a pair of gate electrodes (14A, 14B), a charge voltage conversion unit (FD) (15A, 15B) which is a floating diffusion region, a pixel-to-pixel region light-blocking wall (16), and a through electrode (17).

[0054] The semiconductor substrate (11) is, for example, an n-type silicon (Si) substrate comprising a surface (11A) and a back surface (11B), and has a p-well in a predetermined region. The surface (11A) faces the multilayer wiring layer (30). The back surface (11B) is a surface facing the intermediate layer (40), and it is preferable that a fine uneven structure be formed thereon. This is because it is effective in trapping infrared light incident on the semiconductor substrate (11) inside the semiconductor substrate (11). Additionally, the same fine uneven structure may also be formed on the surface (11A).

[0055] The photoelectric conversion region (12) is a photoelectric conversion element configured, for example, by a PIN (Positive Intrinsic Negative) type photodiode (PD), and includes a pn junction formed in a predetermined region of a semiconductor substrate (11). The photoelectric conversion region (12) is configured to detect and receive light from a subject, particularly light having a wavelength in the infrared light range, and to generate and accumulate a charge corresponding to the amount of received light through photoelectric conversion.

[0056] The fixed charge layer (13) is provided to cover the back surface (11B) of the semiconductor substrate (11). The fixed charge layer (13) has, for example, a negative fixed charge to suppress the generation of dark current caused by the interface level of the back surface (11B), which is the light-receiving surface of the semiconductor substrate (11). A hole accumulation layer is formed near the back surface (11B) of the semiconductor substrate (11) by the electric field induced by the fixed charge layer (13). The generation of electrons from the back surface (11B) is suppressed by this hole accumulation layer. In addition, the fixed charge layer (13) includes a portion that extends in the Z-axis direction between the inter-pixel region light-blocking wall (16) and the photoelectric conversion region (12). It is preferable to form the fixed charge layer (13) using an insulating material. Specifically, as a constituent material of the fixed charge layer (13), for example, hafnium oxide (HfO₂) x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x), tantalum oxide (TaO x ), titanium oxide (TiO₂) x ), Lanthanum oxide (LaO₂) x ), Praseodymium oxide (PrO₂) x ), cerium oxide (CeO x ), neodymium oxide (NdO x ), promethium oxide (PmO x ), samarium oxide (SmO x ), Europium oxide (EuO x ), gadolinium oxide (GdO x ), terbium oxide (TbO x ), dysprosium oxide (DyO₂) x ), holmium oxide (HoO x ), thulium oxide (TmO x ), ytterbium oxide (YbO x ), lutetium oxide (LuO₂) x ), yttrium oxide (YO x ), hafnium nitride (HfN x ), aluminum nitride (AlN x ), hafnium oxynitride (HfO₂ x N y ) and aluminum oxynitride (AlO x N y Examples include ) etc.

[0057] A pair of gate electrodes (14A, 14B) each constitute part of a transfer transistor (TG) (141A, 141B) and are arranged in a series along the Z-axis direction, for example, from a surface (11A) to a photoelectric conversion region (12). The TG (141A) and TG (141B) transfer charges accumulated in the photoelectric conversion region (12) to a pair of FDs (15A, 15B) in response to a driving signal applied to each of the gate electrodes (14A, 14B).

[0058] A pair of FDs (15A, 15B) are floating diffusion regions that convert and output an electric charge transmitted from a photoelectric conversion region (12) through a TG (141A, 141B) including a gate electrode (14A, 14B) into an electric signal (e.g., a voltage signal). As shown in FIG. 3 described later, a reset transistor (RST) (143A, 143B) is connected to the FDs (15A, 15B), and a vertical signal line (Lsig) (Fig. 1) is connected through an amplifier transistor (AMP) (144A, 144B) and a select transistor (SEL) (145A, 145B).

[0059] FIG. 2B is an enlarged cross-sectional view along the Z-axis showing the inter-pixel area light-blocking wall (16) surrounding the penetrating electrode (17), and FIG. 2C is an enlarged cross-sectional view along the XY plane showing the inter-pixel area light-blocking wall (16) surrounding the penetrating electrode (17). FIG. 2B shows a cross-sectional view in the chronological direction along the line IIB-IIB shown in FIG. 2C. The inter-pixel area light-blocking wall (16) is provided at the boundary portion with another neighboring pixel (P) within the XY plane. The inter-pixel area light-blocking wall (16) includes, for example, a portion that widens along the XZ plane and a portion that widens along the YZ plane, and is provided to surround the photoelectric conversion area (12) of each pixel (P). Additionally, the inter-pixel area light-blocking wall (16) may be provided to surround the penetrating electrode (17). By doing so, oblique incidence of unnecessary light into the photoelectric conversion area (12) between adjacent pixels (P) can be suppressed and color mixing can be prevented.

[0060] The interpixel area light-blocking wall (16) is made of a material comprising, for example, at least one of a single metal, a metal alloy, a metal nitride, and a metal silicide having light-blocking properties. More specifically, the constituent materials of the interpixel area light-blocking wall (16) may include Al (aluminum), Cu (copper), Co (cobalt), W (tungsten), Ti (titanium), Ta (tantalum), Ni (nickel), Mo (molybdenum), Cr (chromium), Ir (iridium), platinum iridium, TiN (titanium nitride), or tungsten silicon compounds. In addition, the constituent materials of the interpixel area light-blocking wall (16) are not limited to metal materials and may be composed using graphite. Furthermore, the interpixel area light-blocking wall (16) is not limited to conductive materials and may be composed of non-conductive materials having light-blocking properties, such as organic materials. Additionally, an insulating layer (Z1) made of an insulating material, such as SiOx (silicon oxide) or aluminum oxide, may be provided between the inter-pixel area light-blocking wall (16) and the through electrode (17). Alternatively, insulation between the inter-pixel area light-blocking wall (16) and the through electrode (17) may be achieved by providing a gap between the inter-pixel area light-blocking wall (16) and the through electrode (17). Furthermore, if the inter-pixel area light-blocking wall (16) is composed of a non-conductive material, the insulating layer (Z1) may not be provided. Additionally, an insulating layer (Z2) may be provided on the outer side of the inter-pixel area light-blocking wall (16), that is, between the inter-pixel area light-blocking wall (16) and the fixed charge layer (13). The insulating layer (Z2) may be made of an insulating material, such as SiOx (silicon oxide) or aluminum oxide. Alternatively, insulation between the interpixel area light-shielding wall (16) and the fixed charge layer (13) may be achieved by providing a gap between the interpixel area light-shielding wall (16) and the fixed charge layer (13). When the interpixel area light-shielding wall (16) is made of a conductive material, electrical insulation between the interpixel area light-shielding wall (16) and the semiconductor substrate (11) is ensured by this insulating layer (Z2).Additionally, the interpixel area light-blocking wall (16) is arranged to surround the penetrating electrode (17), so that when the interpixel area light-blocking wall (16) is made of a conductive material, electrical insulation between the interpixel area light-blocking wall (16) and the penetrating electrode (17) is ensured by the insulating layer (Z1).

[0061] The through electrode (17) is a connecting member that electrically connects, for example, a reading electrode (26) of an organic photoelectric converter (20) provided on the back side (11B) of a semiconductor substrate (11) and an FD (131) and AMP (133) provided on the surface (11A) of a semiconductor substrate (11) (see FIG. 4 below). The through electrode (17) is, for example, a transmission path that transmits signal charge generated in the organic photoelectric converter (20) or transmits voltage to drive the charge accumulation electrode (25). The through electrode (17) can be arranged to extend in the Z-axis direction, for example, from the reading electrode (26) of the organic photoelectric converter (20) through the semiconductor substrate (11) to the multilayer wiring layer (30). The through electrode (17) is capable of effectively transmitting signal charge generated from an organic photoelectric converter (20) provided on the back side (11B) of the semiconductor substrate (11) to the surface side (11A) of the semiconductor substrate (11). A fixed charge layer (13) and an insulating layer (41) are provided around the through electrode (17), thereby electrically insulating the through electrode (17) and the p-well region of the semiconductor substrate (11).

[0062] The penetrating electrode (17) can be formed using one or more of the following metal materials: aluminum (Al), tungsten (W), titanium (Ti), cobalt (Co), platinum (Pt), palladium (Pd), copper (Cu), hafnium (Hf), and tantalum (Ta), in addition to silicon material doped with impurities such as PDAS (Phosphorus Doped Amorphous Silicon).

[0063] (Multilayer wiring layer (30))

[0064] The multilayer wiring layer (30) includes a reading circuit having, for example, TG (141A, 141B), RST (143A, 143B), AMP (144A, 144B) and SEL (145A, 145B).

[0065] (Middle layer (40))

[0066] The intermediate layer (40) may, for example, have an insulating layer (41), an optical filter (42) embedded in the insulating layer (41), and a pixel-area light-blocking film (43). The insulating layer (41) may, for example, be silicon oxide (SiO₂). x ), silicon nitride (SiN x It is composed of a single layer made of one of inorganic insulating materials such as silicon oxynitride (SiON) and silicon oxynitride, or a laminated layer made of two or more of these. Additionally, as a material constituting the insulating layer (41), organic insulating materials such as polymethyl methacrylate (PMMA), polyvinylphenol (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, N-2(aminoethyl)3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), tetraethoxysilane (TEOS), and octadecyltrichlorosilane (OTS) may be used.

[0067] The optical filter (42) has a transmission band in the infrared light range (e.g., wavelength 880 nm or more and 1040 nm or less) where photoelectric conversion is performed in the photoelectric conversion region (12). That is, the optical filter (42) is more conducive to transmitting light having a wavelength in the infrared range than light having a wavelength in the visible range (e.g., wavelength 400 nm or more and 700 nm or less). Specifically, the optical filter (42) can be constructed, for example, by an organic material, and is configured to selectively transmit light in the infrared range while absorbing at least a portion of light with a wavelength in the visible range.

[0068] The inter-pixel area light-blocking film (43) is provided at the boundary portion with another neighboring pixel (P) within the XY plane. The inter-pixel area light-blocking film (43) includes a portion that extends along the XY plane and is provided to surround the photoelectric conversion area (12) of each pixel (P). Similar to the inter-pixel area light-blocking wall (16), the inter-pixel area light-blocking film (43) suppresses unwanted incident light into the photoelectric conversion area (12) between adjacent pixels (P) and prevents color mixing. Additionally, since the inter-pixel area light-blocking film (43) may be provided as needed, the pixel (P1) may not have the inter-pixel area light-blocking film (43).

[0069] (Organic photoelectric conversion unit (20))

[0070] The organic photoelectric conversion unit (20) has a reading electrode (26), a semiconductor layer (21), an organic photoelectric conversion layer (22), and an upper electrode (23) that are sequentially stacked, for example, from a position close to the photoelectric conversion unit (10). The organic photoelectric conversion unit (20) also has an insulating layer (24) provided below the semiconductor layer (21) and a charge accumulation electrode (25) provided to face the semiconductor layer (21) through the insulating layer (24). The charge accumulation electrode (25) and the reading electrode (26) are spaced apart from each other and are provided, for example, in the same layer. The reading electrode (26) is in contact with the top of the through electrode (17). Additionally, the upper electrode (23), the organic photoelectric conversion layer (22), and the semiconductor layer (21) may each be provided in common in some of the multiple pixels (P) (Fig. 2A) in the pixel section (100), or in common in all of the multiple pixels (P) in the pixel section (100). The same applies to other embodiments and variations described later in this embodiment.

[0071] Additionally, other organic layers may be provided between the organic photoelectric conversion layer (22) and the semiconductor layer (21) and between the organic photoelectric conversion layer (22) and the upper electrode (23).

[0072] The reading electrode (26), upper electrode (23), and charge accumulation electrode (25) are composed of a light-transmitting conductive film, for example, ITO (indium tin oxide). However, in addition to ITO, tin oxide (SnOx)-based materials with added dopants or zinc oxide-based materials formed by adding dopants to zinc oxide (ZnO) may be used as constituent materials for the reading electrode (26), upper electrode (23), and charge accumulation electrode (25). Examples of zinc oxide-based materials include aluminum zinc oxide (AZO) with aluminum (Al) added as a dopant, gallium zinc oxide (GZO) with gallium (Ga) added, and indium zinc oxide (IZO) with indium (In) added. Additionally, CuI, InSbO4, ZnMgO, CuInO2, MgIN2O4, CdO, ZnSnO3, or TiO2 may be used as constituent materials for the reading electrode (26), upper electrode (23), and charge accumulation electrode (25). Additionally, spinel-type oxides or oxides having a YbFe2O4 structure may be used.

[0073] The organic photoelectric conversion layer (22) converts light energy into electrical energy and is formed by including two or more types of organic materials that function as, for example, a p-type semiconductor and an n-type semiconductor. The p-type semiconductor functions as a relative electron donor, and the n-type semiconductor functions as an n-type semiconductor that functions as a relative electron acceptor. The organic photoelectric conversion layer (22) has a bulk heterojunction structure within the layer. The bulk heterojunction structure is a p / n junction surface formed by mixing the p-type semiconductor and the n-type semiconductor, and the excitons generated when light is absorbed are separated into electrons and holes at this p / n junction interface.

[0074] The organic photoelectric conversion layer (22) may also be composed of three types of so-called dye materials that, in addition to the p-type semiconductor and n-type semiconductor, photoelectrically convert light of a predetermined wavelength band while transmitting light of another wavelength band. It is preferable that the p-type semiconductor, n-type semiconductor, and dye material have different absorption maximum wavelengths. This makes it possible to absorb wavelengths of the visible light region over a wide range.

[0075] The organic photoelectric conversion layer (22) can be formed, for example, by mixing the various organic semiconductor materials and using spin coat technology. Alternatively, the organic photoelectric conversion layer (22) may be formed using, for example, vacuum deposition or printing technology.

[0076] As for the material constituting the semiconductor layer (21), it is preferable to use a material having a large band gap value (e.g., a band gap value of 3.0 eV or more) and higher mobility than the material constituting the organic photoelectric conversion layer (22). Specifically, examples include oxide semiconductor materials such as IGZO; transition metal dichalcogenides; silicon carbide; diamond; graphene; carbon nanotubes; and organic semiconductor materials such as condensed polycyclic hydrocarbon compounds or condensed heterocyclic compounds.

[0077] The charge accumulation electrode (25) forms a type of capacitor together with the insulating layer (24) and the semiconductor layer (21) and is configured to accumulate the charge generated in the organic photoelectric conversion layer (22) in a portion of the semiconductor layer (21), for example, in a region corresponding to the charge accumulation electrode (25) through the insulating layer (24) of the semiconductor layer (21). In this embodiment, one charge accumulation electrode (25) is provided corresponding to each of one photoelectric conversion region (12), one color filter (52), and one on-chip lens (54). The charge accumulation electrode (25) is connected, for example, to a vertical driving circuit (111).

[0078] The insulating layer (24) can be formed by an inorganic insulating material and an organic insulating material, such as the insulating layer (41), for example.

[0079] As described above, the organic photoelectric converter (20) detects part or all of the wavelengths of the visible light range. Additionally, it is preferable that the organic photoelectric converter (20) does not have sensitivity to the infrared light range.

[0080] In the organic photoelectric conversion unit (20), light incident from the upper electrode (23) is absorbed by the organic photoelectric conversion layer (22). The excitons (electron-hole pairs) generated by this move to the interface between the electron donor and the electron acceptor constituting the organic photoelectric conversion layer (22) and undergo exciton separation, that is, dissociation into electrons and holes. The charges generated here, namely electrons and holes, move to the upper electrode (23) or the semiconductor layer (21) by diffusion due to the carrier concentration difference or by an internal electric field due to the potential difference between the upper electrode (23) and the charge accumulation electrode (25), and are detected as photocurrent. For example, the reading electrode (26) is set to a positive potential and the upper electrode (23) is set to a negative potential. In that case, holes generated by photoelectric conversion in the organic photoelectric conversion layer (22) move to the upper electrode (23). Electrons generated by photoelectric conversion in the organic photoelectric conversion layer (22) are attracted to the charge accumulation electrode (25) and are accumulated in a portion of the semiconductor layer (21), for example, through the insulating layer (24) of the semiconductor layer (21), in a region corresponding to the charge accumulation electrode (25).

[0081] The charge (e.g., electrons) accumulated in the region corresponding to the charge accumulation electrode (25) through the insulating layer (24) of the semiconductor layer (21) is read as follows. Specifically, a potential (V26) is applied to the reading electrode (26) and a potential (V25) is applied to the charge accumulation electrode (25). Here, the potential (V26) is made higher than the potential (V25) (V25 <V26). 이렇게 함으로써, 반도체층(21) 중 전하 축적 전극(25)에 대응한 영역 부분에 축적되어 있던 전자는 판독 전극(26)에 전송된다.

[0082] In this way, by providing a semiconductor layer (21) on the lower layer of the organic photoelectric conversion layer (22) and accumulating charge (e.g., electrons) in a region corresponding to the charge accumulation electrode (25) through an insulating layer (24) within the semiconductor layer (21), the following effects can be obtained. That is, compared to the case where charge (e.g., electrons) is accumulated in the organic photoelectric conversion layer (22) without providing the semiconductor layer (21), the recombination of holes and electrons during charge accumulation is prevented, the transmission efficiency of the accumulated charge (e.g., electrons) to the reading electrode (26) can be increased, and the generation of dark current can be suppressed. In the above description, the case of reading electrons was exemplified, but reading holes may also be performed. In the case of reading holes, the potential in the above description is explained as the potential felt by the holes.

[0083] (Reading circuit of the photoelectric conversion unit (10))

[0084] FIG. 3 is a circuit diagram illustrating an example of a reading circuit of a photoelectric conversion unit (10) constituting a pixel (P) shown in FIG. 2A.

[0085] The reading circuit of the photoelectric converter (10) has, for example, TG (141A, 141B), OFG (146), FD (15A, 15B), RST (143A, 143B), AMP (144A, 144B), and SEL (145A, 145B).

[0086] TG (141A, 141B) is connected between the photoelectric conversion region (12) and FD (15A, 15B). When a driving signal is applied to the gate electrode (14A, 14B) of TG (141A, 141B) and TG (141A, 141B) becomes active, the transmission gate of TG (141A, 141B) becomes conductive. As a result, the signal charge converted in the photoelectric conversion region (12) is transmitted to FD (15A, 15B) through TG (141A, 141B).

[0087] The OFG (146) is connected between the photoelectric conversion region (12) and the power source. When a driving signal is applied to the gate electrode of the OFG (146) and the OFG (146) becomes active, the OFG (146) becomes conductive. As a result, the signal charge converted to the photoelectric conversion region (12) is discharged to the power source through the OFG (146).

[0088] FD (15A, 15B) is connected between TG (141A, 141B) and AMP (144A, 144B). FD (15A, 15B) converts the signal charge transmitted by TG (141A, 141B) into a voltage signal and outputs it to AMP (144A, 144B).

[0089] RST (143A, 143B) is connected between FD (15A, 15B) and the power supply. When a driving signal is applied to the gate electrode of RST (143A, 143B) and RST (143A, 143B) becomes active, the reset gate of RST (143A, 143B) becomes conductive. As a result, the potential of FD (15A, 15B) is reset to the level of the power supply.

[0090] AMP (144A, 144B) each has a gate electrode connected to FD (15A, 15B) and a drain electrode connected to a power source. AMP (144A, 144B) serves as the input part of a source follower circuit, which is a reading circuit for the voltage signal maintained by FD (15A, 15B). That is, AMP (144A, 144B) forms a source follower circuit with a constant current source connected to one end of the vertical signal line (Lsig) by connecting its source electrode to the vertical signal line (Lsig) through SEL (145A, 145B).

[0091] SEL (145A, 145B) is each connected between the source electrode of AMP (144A, 144B) and the vertical signal line (Lsig). When a driving signal is applied to each gate electrode of SEL (145A, 145B) and SEL (145A, 145B) becomes active, SEL (145A, 145B) becomes conductive and the pixel (P) becomes selected. As a result, the read signal (pixel signal) output from AMP (144A, 144B) is output to the vertical signal line (Lsig) through SEL (145A, 145B).

[0092] In the solid-state imaging device (1), an infrared light pulse is irradiated onto a subject, and the light pulse reflected from the subject is received in the photoelectric conversion region (12) of the photoelectric conversion unit (10). In the photoelectric conversion region (12), multiple charges are generated by the incidence of the infrared light pulse. The multiple charges generated in the photoelectric conversion region (12) are alternately divided into FD (15A) and FD (15B) by supplying a driving signal to a pair of gate electrodes (14A, 14B) alternately over equal periods of time. By changing the shutter phase of the driving signal applied to the gate electrodes (14A, 14B) with respect to the irradiated light pulse, the accumulated amount of charge in FD (15A) and the accumulated amount of charge in FD (15B) become phase-modulated values. Since the round-trip time of the light pulse is estimated by demodulating these, the distance between the solid-state imaging device (1) and the subject is determined.

[0093] (Reading circuit of the organic photoelectric conversion unit (20))

[0094] FIG. 4 is a circuit diagram illustrating an example of a reading circuit of an organic photoelectric conversion unit (20) constituting a pixel (P1) shown in FIG. 2A.

[0095] The reading circuit of the organic photoelectric converter (20) has, for example, FD (131), RST (132), AMP (133), and SEL (134).

[0096] The FD (131) is connected between the reading electrode (26) and the AMP (133). The FD (131) converts the signal charge transmitted by the reading electrode (26) into a voltage signal and outputs it to the AMP (133).

[0097] RST (132) is connected between FD (131) and the power supply. When a driving signal is applied to the gate electrode of RST (132) and RST (132) becomes active, the reset gate of RST (132) becomes conductive. As a result, the potential of FD (131) is reset to the level of the power supply.

[0098] The AMP (133) has a gate electrode connected to the FD (131) and a drain electrode connected to the power supply. The source electrode of the AMP (133) is connected to the vertical signal line (Lsig) through the SEL (134).

[0099] SEL (134) is connected between the source electrode of AMP (133) and the vertical signal line (Lsig). When a driving signal is applied to the gate electrode of SEL (134) and SEL (134) becomes active, SEL (134) becomes conductive and pixel (P1) becomes selected. As a result, a read signal (pixel signal) output from AMP (133) is output to the vertical signal line (Lsig) through SEL (134).

[0100] (Example of planar configuration of pixel (P1))

[0101] FIG. 5 schematically illustrates an example of the arrangement state of a plurality of pixels (P1) in a pixel unit (100). FIG. 5 (A) to (D) each represent the arrangement state at a height position corresponding to the levels (Lv1 to Lv3, Lv5) in the Z-axis direction shown in FIG. 2A. That is, FIG. 5 (A) represents the arrangement state of the on-chip lens (54) in the XY plane, FIG. 5 (B) represents the arrangement state of the color filter (52) in the XY plane, FIG. 5 (C) represents the arrangement state of the charge accumulation electrode (25) and the reading electrode (26) in the XY plane, and FIG. 5 (D) represents the arrangement state of the photoelectric conversion region (12) and the through electrode (17) in the XY plane. FIG. 5 (D) also shows the planar shape of the inter-pixel area light-blocking film (43) at a height position corresponding to level (Lv4) as a dashed line. As illustrated in FIG. 5 (A) to (D), in the pixel unit (100), one on-chip lens (54), one color filter (52), one charge accumulation electrode (25), and one photoelectric conversion region (12) are provided at positions corresponding to each other in the Z-axis direction. The corresponding positions mentioned here are, for example, positions that overlap each other in the Z-axis direction. Or, not limited thereto, light incident on one on-chip lens (54) is sequentially incident on one color filter (52), an organic photoelectric conversion unit (20) provided in common to a plurality of pixels (P1), and one photoelectric conversion region (12), and the charge generated by photoelectric conversion in the organic photoelectric conversion unit (20) is attracted to one charge accumulation electrode (25) and accumulated in a portion of the semiconductor layer (21), that is, through the insulating layer (24), in a region corresponding to the charge accumulation electrode (25).In addition, when one on-chip lens (54), one color filter (52), one charge accumulation electrode (25), and one photoelectric conversion region (12) are positioned so as to overlap each other in the Z-axis direction, their respective center positions may or may not coincide with each other. Also, FIG. 5 shows a planar configuration example of a total of 16 pixels (P1) arranged in four each in the X-axis direction and the Y-axis direction, and in the pixel section (100), for example, these 16 pixels (P1) are arranged in multiple places in both the X-axis direction and the Y-axis direction.

[0102] In the example of FIG. 5, as shown in (B), one red pixel (PR1) that receives red light using a red color filter (52R), one blue pixel (PB1) that receives blue light using a blue color filter (52B), and two green pixels (PG1) that receive green light using a green color filter (52G) constitute one pixel group (PP1). The arrangement of multiple pixels (P) shown in (B) of FIG. 5 is called a so-called Bayer array. Red pixels (PR1) are arranged with one pixel every other in the X-axis direction and Y-axis direction, respectively. Blue pixels (PB1) are arranged with one pixel every other in the X-axis direction and Y-axis direction, respectively, and are positioned in an oblique direction relative to the red pixels (PR1). Green pixels (PG1) are arranged to fill the gap between the red pixels (PR1) and the blue pixels (PB1). Also, FIG. 5 is an example, and the arrangement state of a plurality of pixels (P1) in the pixel portion (100) of the present disclosure is not limited to this.

[0103] As illustrated in (C) of FIG. 5, the reading electrode (26) is provided in a ratio of one per pixel group (PP1). Specifically, one reading electrode (26) is placed in the gap near the center of the four charge accumulation electrodes (25) in one pixel group (PP1). Furthermore, FIG. 5 is an example, and the placement position of the reading electrode (26) in the pixel portion (100) of the present disclosure is not limited to this. In the example of FIG. 5, since it is provided in the center of the four pixels (P) constituting one pixel group (PP1), the distance between each charge accumulation electrode (25) and the reading electrode (26) of the four pixels (P) is approximately equal. For this reason, it is suitable for sharing the reading electrode (26) between adjacent pixels (P).

[0104] As illustrated in (D) of FIG. 5, through electrodes (17) are provided at a ratio of one per pixel (P). Specifically, one through electrode (17) is placed in the gap near the four corners of the photoelectric conversion area (12) in each pixel (P). By placing through electrodes (17) near the corners of the photoelectric conversion area (12) in this way, the area of ​​the photoelectric conversion area (12) can be made larger. Furthermore, FIG. 5 is an example, and the placement location of the through electrode (17) in the pixel portion (100) of the present disclosure is not limited to this. For example, as illustrated in FIG. 6, through electrodes (17) may also be placed at a position in the middle of the four corners of the photoelectric conversion area (12) near the boundary between adjacent photoelectric conversion areas (12). FIG. 6 schematically illustrates a variation of the arrangement state of a plurality of pixels (P1) in the pixel section (100) illustrated in FIG. 1. As illustrated in FIG. 5 (D) and FIG. 6 (D), the through electrode (17) and the reading electrode (26) are preferably positioned so as not to overlap in the Z-axis direction near the center of the on-chip lens (54). This is advantageous for increasing the amount of infrared light incident on the photoelectric conversion area (12) and for improving the infrared light detection sensitivity in each pixel (P1). Furthermore, the present disclosure is not limited to the embodiments illustrated in FIG. 5 and FIG. 6; for example, the through electrode (17) may not be placed at the four corner portions of the photoelectric conversion area (12), and the through electrode (17) may be placed only at the middle position of the four corner portions of the photoelectric conversion area (12). In addition, for each pixel (P), the optical characteristics in the photoelectric conversion region (12) are improved by arranging a plurality of through electrodes (17) as symmetrically as possible within a plane orthogonal to the Z-axis. That is, for example, when obliquely incident light is received, the uniformity of the photoelectric conversion characteristics within a plane orthogonal to the Z-axis in the photoelectric conversion region (12) is improved.

[0105] As shown in (D) of FIG. 5 and (D) of FIG. 6, the inter-pixel area light-blocking film (43) is provided to form a grid shape as a whole at the boundary portion with other neighboring pixels (P1) within the XY plane. The inter-pixel area light-blocking film (43) is provided to surround the photoelectric conversion area (12) of each pixel (P1) and includes a plurality of opening portions (43K). As previously mentioned, the inter-pixel area light-blocking film (43) suppresses unwanted incident light on the photoelectric conversion area (12) between adjacent pixels (P1) and prevents color mixing. Here, the center position of each opening portion (43K) in the inter-pixel area light-blocking film (43) may be shifted from the center position of each pixel (P1). This is to reduce the deviation in detection characteristics of a plurality of pixels (P1) placed in the pixel section (100), for example, to avoid a decrease in detection sensitivity of pixels (P1) placed in the periphery of the pixel section (100). In that case, the amount of shift of the center position of each aperture section (43K) relative to the center position of each pixel (P1) may be increased as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). In particular, the amount of shift may be changed non-linearly as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). By doing so, it becomes possible to further improve the shading characteristics at the ends of the pixel section (100).

[0106] Additionally, the spacing between adjacent pixels (P1) may be increased as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). In particular, it is preferable that the spacing change non-linearly as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). By doing so, for example, eye correction corresponding to the image height of each of the multiple pixels (P1) arranged in the pixel section (100) can be performed.

[0107] [Effect of operation of solid imaging device (1)]

[0108] The solid-state imaging device (1) of the present embodiment has an organic photoelectric conversion unit (20) that detects light having a wavelength in the visible light range stacked sequentially from the incident side and performs photoelectric conversion, an optical filter (42) having a transmission band in the infrared light range, and a photoelectric conversion unit (10) that detects light having a wavelength in the infrared light range and performs photoelectric conversion. Accordingly, a visible light image composed of red light signals, green light signals, and blue light signals obtained from red pixels (PR), green pixels (PG), and blue pixels (PB), respectively, and an infrared light image using infrared light signals obtained from all of the plurality of pixels (P) can be simultaneously acquired at the same location in the XY plane direction. Therefore, high integration in the XY plane direction can be realized.

[0109] In addition, since the photoelectric conversion unit (10) is configured to have a pair of gate electrodes (14A, 14B) and FDs (15A, 15B), it can acquire an infrared light image as a distance image containing information about the distance to the subject. Therefore, according to the solid-state imaging device (1) of the present embodiment, it is possible to acquire a high-resolution visible light image and an infrared light image having depth information.

[0110] In this embodiment, the organic photoelectric conversion unit (20) has a structure in which a reading electrode (26), a semiconductor layer (21), an organic photoelectric conversion layer (22), and an upper electrode (23) are sequentially stacked, in addition to having an insulating layer (24) provided below the semiconductor layer (21) and a charge accumulation electrode (25) provided to face the semiconductor layer (21) through the insulating layer (24). Accordingly, the charge generated by photoelectric conversion in the organic photoelectric conversion layer (22) can be accumulated in a part of the semiconductor layer (21), for example, in a region corresponding to the charge accumulation electrode (25) through the insulating layer (24) within the semiconductor layer (21). Because of this, for example, at the start of exposure, the removal of charge from the semiconductor layer (21), that is, the complete depletion of the semiconductor layer (21), can be realized. As a result, since kTC noise can be reduced, the degradation of image quality due to random noise can be suppressed. In addition, compared to the case where a charge (e.g., electrons) is accumulated in an organic photoelectric conversion layer (22) without providing a semiconductor layer (21), the recombination of holes and electrons during charge accumulation is prevented, and the efficiency of transferring the accumulated charge (e.g., electrons) to the reading electrode (26) can be increased, and the generation of dark current can be suppressed.

[0111] In addition, in the present disclosure, as shown in the pixel (P1A) illustrated in FIG. 2D, a semiconductor layer (21) may not be provided. In the pixel (P1A) illustrated in FIG. 2D, an organic photoelectric conversion layer (22) is connected to a reading electrode (26), and a charge accumulation electrode (25) is provided to face the organic photoelectric conversion layer (22) through an insulating layer (24). In this configuration, the charge generated by photoelectric conversion in the organic photoelectric conversion layer (22) is accumulated in the organic photoelectric conversion layer (22). Even in this case, a type of capacitor is formed by the organic photoelectric conversion layer (22), the insulating layer (24), and the charge accumulation electrode (25) during photoelectric conversion in the organic photoelectric conversion layer (22). For this reason, the removal of charge from the organic photoelectric conversion layer (22), that is, the complete depletion of the organic photoelectric conversion layer (22), can be realized, for example, at the start of exposure. As a result, since kTC noise can be reduced, image quality degradation caused by random noise can be suppressed.

[0112] In addition, in the present embodiment, in the pixel section (100), one on-chip lens (54), one color filter (52), one charge accumulation electrode (25), and one photoelectric conversion region (12) are provided at positions corresponding to each other in the Z-axis direction. Because of this, an infrared light signal can be obtained at a position corresponding to each of the red pixel (PR1), green pixel (PG1), and blue pixel (PB1). Accordingly, in the pixel (P1) of the present embodiment, an infrared light image having high resolution can be obtained compared to the pixel (P2) of the second embodiment and the pixel (P3) of the third embodiment described later.

[0113] In addition, in this embodiment, red, green, and blue color filters (52R, 52G, 52B) are each provided to receive red light, green light, and blue light respectively to acquire a color visible light image, but it is also possible to acquire a black and white visible light image without providing a color filter (52).

[0114] In addition, in this embodiment, the through electrode (17) and the reading electrode (26) are positioned so as not to overlap in the Z-axis direction near the center of the on-chip lens (54), so the infrared light detection sensitivity at each pixel (P1) can be improved.

[0115] <2. Second Embodiment>

[0116] [Composition of Pixel (P2)]

[0117] FIG. 7 schematically illustrates an example of a cross-sectional configuration of a pixel (P2) as an imaging element of the second embodiment. FIG. 8 schematically illustrates an example of an arrangement state of a plurality of pixels (P2) in the XY plane. The pixel (P2) can be applied to a pixel (P) constituting a pixel section (100) in a solid-state imaging device (1) as shown in FIG. 1, just like the pixel (P1) as an imaging element of the first embodiment. However, in this embodiment, as shown in FIG. 8, four pixels (P2) constitute one pixel group (PP2) and share one photoelectric conversion section (10). Accordingly, as an example, when using the pixel (P2) of the present embodiment as the pixel (P) shown in FIG. 1, it is possible to drive an organic photoelectric conversion unit (20) including one charge accumulation electrode (25) with the pixel (P2) as a unit, and also drive a photoelectric conversion unit (10) with the pixel group (PP2) as a unit. In addition, in FIG. 7, two reading electrodes (26) that are in contact with the through electrode (17) and the upper end thereof are described on the left and right sides, and the reading electrode (26) on the right appears to be separated from the semiconductor layer (21). However, in reality, the reading electrode (26) on the right is also connected to the semiconductor layer (21) in a cross-section different from the cross-section shown in FIG. 7.

[0118] Figures 8 (A) to (D) each represent an arrangement state at a height position corresponding to the levels (Lv1 to Lv3, Lv5) in the Z-axis direction shown in Figure 7. That is, Figure 8 (A) represents the arrangement state of the on-chip lens (54) in the XY plane, Figure 8 (B) represents the arrangement state of the color filter (52) in the XY plane, Figure 8 (C) represents the arrangement state of the charge accumulation electrode (25) in the XY plane, and Figure 8 (D) represents the arrangement state of the photoelectric conversion region (12), the through electrode (17), and the reading electrode (26) in the XY plane. Additionally, in Figure 8, the reading electrode (26) is shown in (D) to ensure visibility. In addition, in Fig. 8 (B), the symbol (PR2) represents a red pixel (P2), the symbol (PG2) represents a green pixel (P2), and the symbol (PB2) represents a blue pixel (P2). The color arrangement of the color filter (52) is not particularly limited, but for example, a Bayer array may be used.

[0119] In the first embodiment above, in the pixel section (100), one on-chip lens (54), one color filter (52), one charge accumulation electrode (25), and one photoelectric conversion area (12) are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, for one photoelectric conversion area (12), four on-chip lenses (54), four color filters (52), and four charge accumulation electrodes (25) are arranged at positions corresponding to each other in the Z-axis direction. More specifically, for one photoelectric conversion area (12), the on-chip lens (54), the color filter (52), and the charge accumulation electrode (25) are arranged in two columns in the X-axis direction and two rows in the Y-axis direction, respectively. That is, in this embodiment, as shown in FIGS. 7 and 8, each pixel (P2) has one on-chip lens (54), one color filter (52), and one charge accumulation electrode (25), and four adjacent pixels (P2) in both the X-axis and Y-axis directions form one pixel group (PP2), and the four pixels (P2) share one photoelectric conversion unit (10). Except for this point, the configuration of the pixels (P2) is substantially the same as the configuration of the pixels (P1). In addition, FIG. 8 (D) shows an example in which the through electrode (17) and the reading electrode (26) are each placed at four corners of the photoelectric conversion area (12) near the boundary between adjacent photoelectric conversion areas (12).

[0120] [Effect of the operation of pixel (P2)]

[0121] According to the pixel (P2) of the present embodiment, since it has the configuration described above, a visible light image and an infrared light image containing distance information can be acquired simultaneously at the same location in the in-plane direction. In addition, according to the pixel (P2), the difference in infrared light detection sensitivity among the multiple pixels (P2) constituting the pixel unit (100) can be reduced compared to the case where the pixel unit (100) is composed of multiple pixels (P1). When the pixel unit (100) is composed of multiple pixels (P1), the transmittance of infrared light passing through the color filter (52) differs depending on the color of the color filter (52). For this reason, the intensity of infrared light reaching the photoelectric conversion region (12) differs in the red pixel (PR1), the blue pixel (PB1), and the green pixel (PG1), respectively. For this reason, a difference in infrared light detection sensitivity occurs among the multiple pixels (P1) constituting one pixel group (PP1). In this regard, according to the pixel (P2) of the present embodiment, infrared light that has passed through one color filter (52R), one color filter (52B), and two color filters (52G) is directed to each photoelectric conversion region (12). Because of this, the difference in infrared light detection sensitivity between multiple pixel groups (PP2) can be reduced.

[0122] In addition, in this embodiment, the through electrode (17) and the reading electrode (26) are positioned so as not to overlap near the center of each on-chip lens (54) and in the Z-axis direction, so the infrared light detection sensitivity in each pixel (P2) can be improved.

[0123] In addition, even when multiple pixels (P2) of the present embodiment are arranged, the center position of each opening portion (43K) in the inter-pixel area light-blocking film (43) may be shifted from the center position of each pixel (P2). This is done to reduce the deviation in detection characteristics of multiple pixels (P2) arranged in the pixel portion (100), for example, to avoid a decrease in detection sensitivity of pixels (P2) arranged in the periphery of the pixel portion (100). In that case, the amount of shift of the center position of each opening portion (43K) relative to the center position of each pixel (P2) may be increased as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100). In particular, it is preferable that the amount of shift changes non-linearly as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100).

[0124] Additionally, the spacing between neighboring pixels (P2) may be increased as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). In particular, it is preferable that the spacing change non-linearly as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). By doing so, for example, a correction corresponding to each of the images in a plurality of pixels (P2) arranged in the pixel section (100) can be performed.

[0125] Additionally, FIG. 8 is an example, and the placement positions of the through electrode (17) and the reading electrode (26) in the plurality of pixels (P2) arranged in the pixel section (100) of the present disclosure are not limited to this. For example, as shown in FIG. 9, the through electrode (17) may be placed at a position midway between the four corner sections of the photoelectric conversion area (12) near the boundary between adjacent photoelectric conversion areas (12). FIG. 9 schematically illustrates a first variation of the arrangement state of the plurality of pixels (P2) in the pixel section (100). Alternatively, as shown in FIG. 10, the through electrode (17) may be placed at both the four corner sections of the photoelectric conversion area (12) and the position midway between the four corner sections of the photoelectric conversion area (12), respectively, near the boundary between adjacent photoelectric conversion areas (12). FIG. 10 schematically illustrates a second variation of the arrangement state of multiple pixels (P2) in the pixel section (100). Additionally, as shown in FIG. 11, one on-chip lens (54A) having the size of two on-chip lenses (54) may be placed in place of two on-chip lenses (54) arranged in the X-axis direction. FIG. 11 schematically illustrates a third variation of the arrangement state of multiple pixels (P2) in the pixel section (100). In the example of FIG. 11, all color filters (52) placed directly below the on-chip lens (54A) are, for example, green color filters (52G) that transmit green light. As a result, light transmitted through the on-chip lens (54A) is received at two pixels (PG2), so phase difference information on the upper surface can be obtained. Additionally, the color arrangement of the color filter (52) is not particularly limited, but regarding the parts other than the on-chip lens (54A), for example, a Bayer arrangement may be used. Also, in FIG. 11, through electrodes (17) and reading electrodes (26) are arranged at the four corner positions in the photoelectric conversion area (12), but the present disclosure is not limited to this.For example, in addition to the configuration of FIG. 11, a through electrode (17) may also be placed at a midpoint between the four corners of the photoelectric conversion region (12) near the boundary between adjacent photoelectric conversion regions (12). Alternatively, a through electrode (17) may not be placed at the four corners of the photoelectric conversion region (12), but only at a midpoint between the four corners of the photoelectric conversion region (12).

[0126] <3. Third Embodiment>

[0127] [Composition of Pixel (P3)]

[0128] FIG. 12 schematically illustrates an example of a cross-sectional configuration of a pixel (P3) as an imaging element of the third embodiment. FIG. 13 is a schematic diagram illustrating an example of an arrangement state of a plurality of pixels (P3) in the XY plane. The pixel (P3) can be applied to a pixel (P) constituting a pixel section (100) in a solid-state imaging device (1) as shown in FIG. 1, just like the pixel (P1) as an imaging element of the first embodiment. However, in this embodiment, as shown in FIG. 13, 16 pixels (P3) constitute one pixel group (PP3) and share one photoelectric conversion section (10). Accordingly, when using the pixel (P3) of the present embodiment as the pixel (P) shown in FIG. 1 as an example, the driving of an organic photoelectric conversion unit (20) including one charge accumulation electrode (25) is performed using the pixel (P3) as a unit, and the driving of one photoelectric conversion unit (10) is performed using the pixel group (PP3) as a unit.

[0129] Figures 13 (A) to (D) each represent an arrangement state at a height position corresponding to the levels (Lv1 to Lv3, Lv5) in the Z-axis direction shown in Figure 12. That is, Figure 13 (A) represents the arrangement state of the on-chip lens (54) in the XY plane, Figure 13 (B) represents the arrangement state of the color filter (52) in the XY plane, Figure 13 (C) represents the arrangement state of the charge accumulation electrode (25) and the reading electrode (26) in the XY plane, and Figure 13 (D) represents the arrangement state of the photoelectric conversion region (12) and the through electrode (17) in the XY plane. Additionally, in Figure 13, the reading electrode (26) is also indicated in (D) to ensure visibility. Additionally, in Fig. 13 (C), the charge accumulation electrode (25) and the reading electrode (26) are depicted as partially overlapping, but in reality, the charge accumulation electrode (25) and the reading electrode (26) are spaced apart from each other. Also, in Fig. 13 (B), the symbol (PR3) represents a red pixel (P3), the symbol (PG3) represents a green pixel (P3), and the symbol (PB3) represents a blue pixel (P3). Furthermore, the color arrangement of the color filter (52) is not particularly limited, but for example, a Bayer arrangement is acceptable.

[0130] In the first embodiment above, in the pixel section (100), one on-chip lens (54), one color filter (52), one charge accumulation electrode (25), and one photoelectric conversion area (12) are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, 16 on-chip lenses (54), 16 color filters (52), and 16 charge accumulation electrodes (25) are arranged at positions corresponding to each other in the Z-axis direction for one photoelectric conversion area (12). More specifically, for one photoelectric conversion area (12), the on-chip lens (54), the color filter (52), and the charge accumulation electrode (25) are arranged in 4 columns in the X-axis direction and 4 rows in the Y-axis direction, respectively. That is, in this embodiment, as shown in FIGS. 12 and 13, 16 adjacent pixels (P3) in both the X-axis and Y-axis directions form a pixel group (PP3) and share one photoelectric conversion unit (10). Except for this point, the configuration of the pixels (P3) is substantially the same as the configuration of the pixels (P1). In addition, FIG. 13 (D) shows an example in which a through electrode (17) is placed near the boundary between adjacent photoelectric conversion areas (12), and is positioned on a straight line connecting the four corners of the photoelectric conversion area (12) and the four corners. In addition, FIG. 13 (D) shows that a reading electrode (26) is placed at the center of each of the four pixels (P3) and the four pixels (P3) share one reading electrode (26).

[0131] [Effect of the operation of pixel (P3)]

[0132] According to the pixel (P3) of the present embodiment, since it has the configuration described above, a visible light image and an infrared light image containing distance information can be acquired simultaneously at the same location in the in-plane direction. In addition, according to the pixel (P3), compared to the case where the pixel unit (100) is composed of a plurality of pixels (P1), the difference in infrared light detection sensitivity in a plurality of pixel groups (PP3) constituting the pixel unit (100) can be reduced.

[0133] In addition, in this embodiment, the through electrode (17) and the reading electrode (26) are positioned so as not to overlap near the center of each on-chip lens (54) and in the Z-axis direction, thereby improving the infrared light detection sensitivity in each pixel (P2). Also, FIG. 13 is one example, and the placement positions of the through electrode (17) and the reading electrode (26) in a plurality of pixels (P3) arranged in the pixel portion (100) of the present disclosure are not limited to this.

[0134] In addition, even when multiple pixels (P3) of the present embodiment are arranged, the center position of each opening portion (43K) in the inter-pixel area light-blocking film (43) may be shifted from the center position of each pixel (P3). This is done to reduce deviations in the detection characteristics of multiple pixels (P3) arranged in the pixel portion (100), for example, to avoid a decrease in the detection sensitivity of pixels (P3) arranged in the periphery of the pixel portion (100). In that case, the amount of shift of the center position of each opening portion (43K) relative to the center position of each pixel (P3) may be increased as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100). In particular, it is preferable that the amount of shift changes non-linearly as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100).

[0135] Additionally, the spacing between neighboring pixels (P3) may be increased as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). In particular, it is preferable that the spacing change non-linearly as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). By doing so, for example, a correction corresponding to each of the images in a plurality of pixels (P2) arranged in the pixel section (100) can be performed.

[0136] <4. Fourth Embodiment>

[0137] [Composition of Pixel (P4)]

[0138] FIG. 14 schematically illustrates an example of a cross-sectional configuration of a pixel (P4) as an imaging element of the fourth embodiment. FIG. 15 is a schematic diagram illustrating an example of an arrangement state of a plurality of pixels (P4) in the XY plane. The pixel (P4) can be applied to a pixel (P) constituting a pixel section (100) in a solid-state imaging device (1) as in FIG. 1, just like the pixel (P1) as an imaging element of the first embodiment. However, in this embodiment, as shown in FIG. 14 and FIG. 15, one pixel (P4) is composed of four sub-pixels (SP4), and each sub-pixel (SP4) has one charge accumulation electrode (25) and one photoelectric conversion section (10). Accordingly, when using the pixel (P4) of the present embodiment as the pixel (P) shown in FIG. 1 as an example, the driving of an organic photoelectric conversion unit (20) including one charge accumulation electrode (25) is performed using a subpixel (SP4) as a unit, and the driving of one photoelectric conversion unit (10) is performed using a subpixel (SP4) as a unit.

[0139] Figures 15 (A) to (D) each represent an arrangement state at a height position corresponding to the levels (Lv1 to Lv3, Lv5) in the Z-axis direction shown in Figure 14. That is, Figure 15 (A) represents the arrangement state of the on-chip lens (54) in the XY plane, Figure 15 (B) represents the arrangement state of the color filter (52) in the XY plane, Figure 15 (C) represents the arrangement state of the charge accumulation electrode (25) in the XY plane, and Figure 15 (D) represents the arrangement state of the photoelectric conversion region (12) and the through electrode (17) in the XY plane. Additionally, in Figure 15, a reading electrode (26) is shown in (D) to ensure visibility. In addition, in (B) of FIG. 15, the symbol (PR4) represents a red pixel (P4), the symbol (PG4) represents a green pixel (P4), and the symbol (PB4) represents a blue pixel (P4).

[0140] In the first embodiment above, in the pixel section (100), one on-chip lens (54), one color filter (52), one charge accumulation electrode (25), and one photoelectric conversion area (12) are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, for one on-chip lens (54), one color filter (52), four charge accumulation electrodes (25), and four photoelectric conversion areas (12) are arranged at positions corresponding to each other in the Z-axis direction. More specifically, for one on-chip lens (54) and one color filter (52), the charge accumulation electrode (25) and the photoelectric conversion area (12) are arranged in two columns in the X-axis direction and two rows in the Y-axis direction, respectively. That is, in this embodiment, as shown in FIGS. 14 and 15, four charge accumulation electrodes (25) and four photoelectric conversion regions (12) are included in one pixel (P4). Except for this point, the configuration of the pixel (P4) is substantially the same as the configuration of the pixel (P1).

[0141] [Effect of the operation of pixel (P4)]

[0142] According to the pixel (P4) of the present embodiment, since it has the configuration described above, a visible light image and an infrared light image containing distance information can be acquired simultaneously at the same location in the in-plane direction. In addition, at each pixel (P4), phase difference information in the X-axis direction and the Y-axis direction can be acquired by infrared light.

[0143] In addition, infrared light signals can be obtained at positions corresponding to each of the red pixel (PR4), green pixel (PG4), and blue pixel (PB4). Therefore, in the pixel (P4) of the present embodiment, an infrared light image having high resolution can be obtained compared to the pixel (P2) of the second embodiment and the pixel (P3) of the third embodiment.

[0144] In addition, in this embodiment, the through electrode (17) and the reading electrode (26) are positioned so as not to overlap in the Z-axis direction near the center of the on-chip lens (54), so the infrared light detection sensitivity in each pixel (P4) can be improved.

[0145] In addition, even when multiple pixels (P4) of the present embodiment are arranged, the center position of each opening portion (43K) in the inter-pixel area light-blocking film (43) may be shifted from the center position of each sub-pixel (SP4). This is to reduce the deviation in detection characteristics of multiple pixels (P4) arranged in the pixel portion (100), for example, to avoid a decrease in detection sensitivity of pixels (P4) arranged in the periphery of the pixel portion (100). In that case, the amount of shift of the center position of each opening portion (43K) relative to the center position of each sub-pixel (SP4) may be increased as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100). In particular, it is preferable that the amount of shift changes non-linearly as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100).

[0146] Additionally, the spacing between neighboring pixels (P4) may be increased as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). In particular, it is preferable that the spacing change non-linearly as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). By doing so, for example, a correction corresponding to each of the images in a plurality of pixels (P4) arranged in the pixel section (100) can be performed.

[0147] Additionally, FIG. 15 is an example, and the placement positions of the through electrode (17) and the reading electrode (26) in the plurality of pixels (P4) arranged in the pixel section (100) of the present disclosure are not limited to this. For example, as shown in FIG. 16, the through electrode (17) may also be placed in the middle of the four corner sections of the photoelectric conversion area (12) near the boundary between adjacent photoelectric conversion areas (12). FIG. 16 schematically illustrates a variation of the arrangement state of the plurality of pixels (P4) in the pixel section (100).

[0148] <5. Fifth Embodiment>

[0149] [Composition of Pixel (P5)]

[0150] FIG. 17 schematically illustrates an example of a cross-sectional configuration of a pixel (P5) as an imaging element of the fifth embodiment. FIG. 18 is a schematic diagram illustrating an example of an arrangement state of a plurality of pixels (P5) in the XY plane. The pixel (P5) can be applied as a pixel (P) constituting a pixel section (100) in a solid-state imaging device (1) as shown in FIG. 1, just like the pixel (P1) as an imaging element of the first embodiment. However, in this embodiment, as shown in FIG. 17 and FIG. 18, one pixel (P5) is composed of four sub-pixels (SP5), and each sub-pixel (SP5) has one charge accumulation electrode (25). Accordingly, when using the pixel (P5) of the present embodiment as the pixel (P) shown in FIG. 1 as an example, the driving of an organic photoelectric conversion unit (20) including one charge accumulation electrode (25) is performed using a sub-pixel (SP5) as a unit, and the driving of one photoelectric conversion unit (10) is performed using the pixel (P5) as a unit.

[0151] Figures 18 (A) to (D) each represent an arrangement state at a height position corresponding to the levels (Lv1 to Lv3, Lv5) in the Z-axis direction shown in Figure 17. That is, Figure 18 (A) represents the arrangement state of the on-chip lens (54) in the XY plane, Figure 18 (B) represents the arrangement state of the color filter (52) in the XY plane, Figure 18 (C) represents the arrangement state of the charge accumulation electrode (25) in the XY plane, and Figure 18 (D) represents the arrangement state of the photoelectric conversion region (12) and the through electrode (17) in the XY plane. Additionally, in Figure 18, a reading electrode (26) is shown in (D) to ensure visibility. In addition, in (B) of FIG. 18, the symbol (PR5) represents a red pixel (P5), the symbol (PG5) represents a green pixel (P5), and the symbol (PB5) represents a blue pixel (P5).

[0152] In the first embodiment above, in the pixel section (100), one on-chip lens (54), one color filter (52), one charge accumulation electrode (25), and one photoelectric conversion area (12) are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, for one on-chip lens (54), one color filter (52), four charge accumulation electrodes (25), and one photoelectric conversion area (12) are arranged at positions corresponding to each other in the Z-axis direction. More specifically, for one on-chip lens (54), one color filter (52), and one photoelectric conversion area (12), the charge accumulation electrode (25) is arranged in two rows in the X-axis direction and in two rows in the Y-axis direction. That is, in this embodiment, as shown in FIGS. 17 and 18, four charge accumulation electrodes (25) are included in one pixel (P5). In addition, in the pixel (P5) of this embodiment, an inter-pixel area light-blocking film (56) may be provided, for example, between the organic photoelectric converter (20) and the on-chip lens (54) in the Z-axis direction, more specifically, for example, between the color filter (52) and the encapsulation film (51). The inter-pixel area light-blocking film (56) is composed mainly of a metal such as W (tungsten) or Al (aluminum). The inter-pixel area light-blocking film (56) includes a plurality of aperture portions (56K) and is provided to form a grid shape as a whole in the boundary portion with neighboring other pixels (P5) within the XY plane, that is, in the area between color filters (52) of different colors. By doing so, unwanted incident light can be suppressed on the organic photoelectric conversion unit (20) between adjacent pixels (P5) and color mixing can be prevented. Additionally, the inter-pixel area light-blocking film (56) is provided to surround the photoelectric conversion area (12) of each pixel (P5) in a planar view. By doing so, unwanted incident light can be suppressed on the photoelectric conversion area (12) between adjacent pixels (P5) and color mixing can be prevented.In FIG. 18, the inter-pixel area light-blocking film (56) is shown as a dashed line in (B). Except for these points, the configuration of the pixel (P5) is substantially the same as the configuration of the pixel (P1). In this embodiment, in particular, since the arrangement pitch of the color filter (52) and the arrangement pitch of the photoelectric conversion area (12) are matched, by providing the inter-pixel area light-blocking film (56), a color mixing prevention effect for both the organic photoelectric conversion unit (20) and the photoelectric conversion area (12) can be expected. Here, the center position of each aperture portion (56K) in the inter-pixel area light-blocking film (43) may be shifted from the center position of each pixel (P5). This is to reduce the deviation in detection characteristics of a plurality of pixels (P5) arranged in the pixel unit (100), for example, to avoid a decrease in detection sensitivity of pixels (P5) arranged in the periphery of the pixel unit (100). In that case, the amount of shift of the center position of each aperture portion (56K) relative to the center position of each pixel (P5) may be increased as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100). In particular, the amount of shift may be changed non-linearly as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100). Additionally, the inter-pixel area light-blocking film (56) can be appropriately applied to any other pixel shown in the present specification as an embodiment and variation other than the pixel (P5) of the present embodiment. However, the inter-pixel area light-blocking film (56) may not be provided in any pixel shown in any embodiment and variation.

[0153] [Effect of the operation of pixel (P5)]

[0154] According to the pixel (P5) of the present embodiment, since it has the configuration described above, a visible light image and an infrared light image containing distance information can be acquired simultaneously at the same location in the in-plane direction. In addition, at each pixel (P5), phase difference information in the X-axis direction and the Y-axis direction can be acquired by visible light.

[0155] In addition, in this embodiment, the through electrode (17) and the reading electrode (26) are positioned so as not to overlap in the Z-axis direction near the center of the on-chip lens (54), so the infrared light detection sensitivity at each pixel (P5) can be improved.

[0156] In addition, even when multiple pixels (P5) of the present embodiment are arranged, the center position of each opening portion (43K) in the inter-pixel area light-blocking film (43) may be shifted from the center position of each pixel (P5). This is done to reduce the deviation in detection characteristics of multiple pixels (P5) arranged in the pixel portion (100), for example, to avoid a decrease in detection sensitivity of pixels (P5) arranged in the periphery of the pixel portion (100). In that case, the amount of shift of the center position of each opening portion (43K) relative to the center position of each pixel (P5) may be increased as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100). In particular, it is preferable that the amount of shift changes non-linearly as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100).

[0157] Additionally, the spacing between neighboring pixels (P5) may be increased as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). In particular, it is preferable that the spacing change non-linearly as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). By doing so, for example, a correction corresponding to each of the images in a plurality of pixels (P5) arranged in the pixel section (100) can be performed.

[0158] Additionally, FIG. 18 is an example, and the placement positions of the through electrode (17) and the reading electrode (26) in the plurality of pixels (P4) arranged in the pixel section (100) of the present disclosure are not limited to this. For example, as shown in FIG. 19, the through electrode (17) may also be placed in the middle of the four corner sections of the photoelectric conversion area (12) near the boundary between adjacent photoelectric conversion areas (12). FIG. 19 schematically illustrates a first variation of the arrangement state of the plurality of pixels (P5) in the pixel section (100). Alternatively, as shown in FIG. 20, the through electrode (17) may be placed at both the four corner sections of the photoelectric conversion area (12) and the middle of the four corner sections of the photoelectric conversion area (12), respectively, near the boundary between adjacent photoelectric conversion areas (12). FIG. 20 schematically illustrates a second variation of the arrangement state of a plurality of pixels (P5) in a pixel section (100).

[0159] Additionally, as illustrated in FIGS. 21A and 21B, for each pixel (P5), for example, the center position of the color filter (52) and the center position of the photoelectric conversion area (12) may be offset by half in both the X-axis direction and the Y-axis direction. By doing so, the deviation in the reception sensitivity of infrared light in each photoelectric conversion area (12) can be reduced. Additionally, FIGS. 21A and 21B schematically illustrate a third variation of the arrangement state of a plurality of pixels (P5) in the pixel section (100). FIG. 21A particularly shows the positional relationship between the on-chip lens (54), the photoelectric conversion area (12), the through electrode (17), and the reading electrode (26). FIG. 21B particularly shows the positional relationship between the on-chip lens (54), the color filter (52), and the photoelectric conversion area (12).

[0160] <6. Sixth Embodiment>

[0161] [Composition of Pixel (P6)]

[0162] FIG. 22 schematically illustrates an example of a cross-sectional configuration of a pixel (P6) as an imaging element of the sixth embodiment. FIG. 23 is a schematic diagram illustrating an example of an arrangement state of a plurality of pixels (P6) in the XY plane. The pixel (P6) can be applied as a pixel (P) constituting a pixel section (100) in a solid-state imaging device (1) as in FIG. 1, similar to the pixel (P1) as an imaging element of the first embodiment. However, in this embodiment, as shown in FIG. 22 and FIG. 23, one pixel (P6) is composed of four sub-pixels (SP4), and each sub-pixel (SP6) has one charge accumulation electrode (25). Additionally, four pixels (P6) form one pixel group (PP6) and share one photoelectric conversion unit (10). Accordingly, when using the pixel (P6) of the present embodiment as the pixel (P) shown in FIG. 1 as an example, the driving of the organic photoelectric conversion unit (20) including one charge accumulation electrode (25) is performed using the sub-pixel (SP6) as a unit, and the driving of the photoelectric conversion unit (10) is performed using the pixel group (PP6) as a unit.

[0163] Figures (A) to (D) of FIG. 23 each represent an arrangement state at a height position corresponding to the levels (Lv1 to Lv3, Lv5) in the Z-axis direction shown in FIG. 22. That is, FIG. 23 (A) represents the arrangement state of the on-chip lens (54) in the XY plane, FIG. 23 (B) represents the arrangement state of the color filter (52) in the XY plane, FIG. 23 (C) represents the arrangement state of the charge accumulation electrode (25) in the XY plane, and FIG. 23 (D) represents the arrangement state of the photoelectric conversion region (12) and the through electrode (17) in the XY plane. Additionally, in FIG. 23, a reading electrode (26) is shown in (D) to ensure visibility. In addition, in (B) of FIG. 23, the symbol (PR6) represents a red pixel (P6), the symbol (PG6) represents a green pixel (P6), and the symbol (PB6) represents a blue pixel (P6).

[0164] In the first embodiment above, in the pixel section (100), one on-chip lens (54), one color filter (52), one charge accumulation electrode (25), and one photoelectric conversion area (12) are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, for one photoelectric conversion area (12), four on-chip lenses (54), four color filters (52), and sixteen charge accumulation electrodes (25) are arranged at positions corresponding to each other in the Z-axis direction. More specifically, for one photoelectric conversion area (12), the on-chip lens (54) and the color filter (52) are arranged in two columns in the X-axis direction and two rows in the Y-axis direction, respectively, and the charge accumulation electrode (25) is arranged in four columns in the X-axis direction and four rows in the Y-axis direction, respectively. That is, in this embodiment, as illustrated in FIGS. 22 and 23, four adjacent pixels (P6) in both the X-axis and Y-axis directions form one pixel group (PP6) and share one photoelectric conversion unit (10). Except for this point, the configuration of the pixels (P6) is substantially the same as the configuration of the pixels (P1).

[0165] [Effect of the operation of pixel (P6)]

[0166] According to the pixel (P6) of the present embodiment, since it has the configuration described above, a visible light image and an infrared light image containing distance information can be acquired simultaneously at the same location in the in-plane direction. In addition, at each pixel (P6), phase difference information in the X-axis direction and the Y-axis direction can be acquired by visible light.

[0167] In addition, in this embodiment, the through electrode (17) and the reading electrode (26) are positioned so as not to overlap in the Z-axis direction near the center of the on-chip lens (54), so the infrared light detection sensitivity at each pixel (P6) can be improved.

[0168] In addition, even when multiple pixels (P6) of the present embodiment are arranged, the center position of each opening portion (43K) in the inter-pixel area light-blocking film (43) may be shifted from the center position of each pixel (P5). This is done to reduce the deviation in detection characteristics of multiple pixels (P6) arranged in the pixel portion (100), for example, to avoid a decrease in detection sensitivity of pixels (P6) arranged in the periphery of the pixel portion (100). In that case, the amount of shift of the center position of each opening portion (43K) relative to the center position of each pixel (P6) may be increased as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100). In particular, it is preferable that the amount of shift changes non-linearly as it approaches the periphery of the pixel portion (100) from the center of the pixel portion (100).

[0169] Additionally, the spacing between adjacent pixels (P6) may be increased as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). In particular, it is preferable that the spacing change non-linearly as it approaches the periphery of the pixel section (100) from the center of the pixel section (100). By doing so, for example, a correction corresponding to each of the multiple pixels (P6) arranged in the pixel section (100) can be performed.

[0170] Additionally, FIG. 23 is an example, and the placement positions of the through electrode (17) and the read electrode (26) in the plurality of pixels (P6) arranged in the pixel section (100) of the present disclosure are not limited to this. For example, as shown in FIG. 24, the through electrode (17) may be placed to surround each on-chip lens (54) near the boundary between adjacent pixel groups (PP6). FIG. 24 schematically illustrates a variation of the arrangement state of the plurality of pixels (P6) in the pixel section (100).

[0171] <7. Seventh Embodiment>

[0172] [Composition of Pixel (P7)]

[0173] FIG. 25 schematically illustrates an example of a cross-sectional configuration of a pixel (P7) as an imaging element of the seventh embodiment. The pixel (P7) can be applied as a pixel (P) constituting a pixel portion (100) in a solid-state imaging device (1) as shown in FIG. 1, just like the pixel (P1) as an imaging element of the first embodiment.

[0174] The pixel (P7) of the present embodiment is configured such that, in addition to the configuration of the pixel (P1), a pair of charge retaining portions (MEMs) (143A, 143B) are also provided on the surface (11A) of the semiconductor substrate (11). Since the MEMs (143A, 143B) share the FD (15A, 15B) with other pixels, they are regions that temporarily retain the charge generated and accumulated in the photoelectric conversion region (12). Except for this point, the configuration of the pixel (P7) is substantially the same as the configuration of the pixel (P1). Furthermore, the MEMs (143A, 143B) have a structure in which an insulating film and an electrode are stacked from the side of the surface (11A). In addition, in addition to this configuration, a structure such as providing a charge retaining portion (143A, 143B) next to the TG (141A, 141B) excluding the floating diffusion layer of 15A, 15B, and providing an FD (15A, 15B) next to it can also be adopted. Furthermore, the MEM (143A, 143B) can be appropriately applied to any of the other pixels shown as embodiments and variations in the present specification other than the pixel (P7) of the present embodiment.

[0175] [Effect of the operation of pixel (P7)]

[0176] According to the pixel (P7) of the present embodiment, since the photoelectric conversion unit (10) is configured to have MEMs (143A, 143B), it becomes possible to share floating diffusion layers 15A and 15B, and the installation efficiency of the imaging element on the semiconductor substrate is improved. For example, by increasing the area of ​​the amplifier transistor, it becomes possible to improve the noise characteristics of the photoelectric conversion film. In addition, the pixel (P7) has the same operating effects as the pixel (P1) of the first embodiment.

[0177] <8. Eighth Embodiment>

[0178] FIG. 26 schematically illustrates an example of a cross-sectional configuration of a pixel (P8) as an imaging element of the eighth embodiment. The pixel (P8) can be applied as a pixel (P) constituting a pixel portion (100) in a solid-state imaging device (1) as shown in FIG. 1, just like the pixel (P1) as an imaging element of the first embodiment.

[0179] The pixel (P8) of the present embodiment is configured such that, in addition to the configuration of the pixel (P1) described in the first embodiment, an optical filter (61) is also provided on the incident side of the on-chip lens (54), that is, on the side opposite to the organic photoelectric conversion unit (20) as viewed from the on-chip lens (54). However, FIG. 26 shows an example in which multiple color filters (52) of different colors are arranged with respect to one optical filter (61), one on-chip lens (54), one organic photoelectric conversion layer (22), one optical filter (42), and one photoelectric conversion region (12). For convenience, FIG. 26 describes color filters (52-1) and color filters (52-2) of different colors. Except for this point, the configuration of the pixel (P8) is substantially the same as the configuration of the pixel (P1). Furthermore, the pixel (P8) is not limited to that shown in FIG. 26. For example, one color filter (52) may be provided for one optical filter (61), or multiple on-chip lenses (54), organic photoelectric conversion layers (22), optical filters (42), and photoelectric conversion regions (12) may be provided for one optical filter (61). Additionally, the organic photoelectric conversion layers (22) may be provided in common to several pixels (P8) or in common to all of the multiple pixels (P8) in the pixel section (100). Alternatively, one optical filter (61) may be provided to span multiple pixels (P8). Furthermore, the optical filter (61) can be applied to any of the pixels (P1 to P7) and their respective variations described in the first to seventh embodiments.

[0180] FIGS. 27A to 27C schematically illustrate the wavelength dependence of the respective light transmittances of the optical filter (61), color filter (52), and optical filter (42) in the pixel (P8). Specifically, FIG. 27A shows the light transmittance distribution of the optical filter (61), FIG. 27B shows the light transmittance distribution of the color filter (52), and FIG. 27C shows the light transmittance distribution of the optical filter (42). Additionally, FIG. 27D shows the relationship between the wavelength incident on the organic photoelectric conversion layer (22) and the sensitivity to the incident light in the organic photoelectric conversion layer (22), and the relationship between the wavelength incident on the photoelectric conversion region (12) and the sensitivity to the incident light in the photoelectric conversion region (12). Additionally, in FIG. 27B, the light transmittance distribution curve of the red color filter (52R) is represented as R, the light transmittance distribution curve of the green color filter (52G) is represented as G, and the light transmittance distribution curve of the blue color filter (52B) is represented as B. Additionally, in FIG. 27C, the light transmittance distribution of the optical filter (61) is represented by a dashed line, and the light transmittance distribution of the optical filter (42) is represented by a solid line. The optical filter (61) is a so-called dual-band pass filter and is an optical component that has a transmission wavelength range for both visible light and infrared light, and selectively transmits a portion of visible light (e.g., light having a wavelength of 400 nm or more and 650 nm or less) and infrared light (e.g., light having a wavelength of 800 nm or more and 900 nm or less). Among the incident light, a portion of the visible light and infrared light passes through the optical filter (61) (Fig. 27A). Among the light transmitted through the optical filter (61), for example, a portion of the visible light and infrared light in the blue region passes through the blue color filter (52B) (Fig. 27B). When the organic photoelectric conversion layer (22) is configured to detect a portion or all of the wavelengths in the visible light region and not have sensitivity to the infrared light region, among the light transmitted through the blue color filter (52B), the visible light in the blue region is absorbed by the organic photoelectric conversion layer (22) and the blue color Of the light that passes through the filter (52B), some of the infrared light passes through the organic photoelectric conversion layer (22).Among the light that has passed through the organic photoelectric conversion layer (22), infrared light that has passed through the optical filter (42) is incident on the photoelectric conversion region (12). The same applies to the red color filter (52R) and the green color filter (52G). As a result, as shown in FIG. 27D, visible light information (R, G, B) is acquired from the organic photoelectric conversion layer (22) and infrared light information (IR) is acquired from the photoelectric conversion region (12). As shown in FIG. 27A to 27D, according to the pixel (P8), only infrared light of a predetermined wavelength range that has passed through the entire optical filter (61), the color filter (52), the organic photoelectric conversion layer (22), and the optical filter (42) is selectively incident on the photoelectric conversion region (12) and converted into photoelectric light.

[0181] Additionally, the characteristics of FIGS. 27A to 27D are examples, and the light transmittance distribution of an optical filter applicable to a pixel (P8) is not limited to that shown in FIGS. 27A to 27D. For example, it may selectively transmit light of a continuous wavelength range from the visible light range to a part of the infrared light range, such as the optical filter (61A) as a modified example shown in FIGS. 28A to 28D. Specifically, FIG. 28A shows the light transmittance distribution of the optical filter (61A), FIG. 28B shows the light transmittance distribution of the color filter (52), and FIG. 28C shows the light transmittance distribution of the optical filter (42). Additionally, FIG. 28D shows the relationship between the wavelength incident on the organic photoelectric conversion layer (22) and the sensitivity to the incident light in the organic photoelectric conversion layer (22) when using an optical filter (61A), and the relationship between the wavelength incident on the photoelectric conversion region (12) and the sensitivity to the incident light in the photoelectric conversion region (12), respectively.

[0182] <9. Ninth Embodiment>

[0183] FIG. 29 schematically illustrates an example of a cross-sectional configuration of a pixel (P9) as an imaging element of the ninth embodiment. The pixel (P9) can be applied as a pixel (P) constituting a pixel portion (100) in a solid-state imaging device (1) as shown in FIG. 1, just like the pixel (P1) as an imaging element of the first embodiment.

[0184] The pixel (P9) of the present embodiment is configured such that, in addition to the configuration of the pixel (P8) described in the eighth embodiment, an inner lens (INL) is also provided between the organic photoelectric conversion unit (20) and the photoelectric conversion unit (10), more specifically between the organic photoelectric conversion layer (22) and the optical filter (42). Except for this point, the configuration of the pixel (P9) is substantially the same as the configuration of the pixel (P8). Furthermore, the configuration of providing an inner lens (INL) between the organic photoelectric conversion layer (22) and the optical filter (42) is applicable to any of the pixels (P1 to P7) described in the first to seventh embodiments and their respective variations.

[0185] In addition, as with the pixel (P9A) illustrated in FIG. 30, an optical waveguide (WG) may be provided instead of an inner lens (INL). FIG. 30 is a schematic diagram illustrating the cross-sectional configuration of a pixel (P9A) as an imaging element, which is a variation of the ninth embodiment. Furthermore, the configuration of providing an optical waveguide (WG) between the organic photoelectric conversion layer (22) and the optical filter (42) is applicable to any of the pixels (P1 to P7) and their respective variations described in the first to seventh embodiments.

[0186] FIG. 31 is a schematic diagram illustrating an example of the arrangement state of multiple pixels (P9, P9A) in the XY plane. FIG. 31 (A) to (E) each represent the arrangement state at a height position corresponding to the levels (Lv1 to Lv5) in the Z-axis direction shown in FIG. 29 and FIG. 30. That is, FIG. 31 (A) represents the arrangement state of the on-chip lens (54) in the XY plane, FIG. 31 (B) represents the arrangement state of the color filter (52) in the XY plane, FIG. 31 (C) represents the arrangement state of the charge accumulation electrode (25) in the XY plane, FIG. 31 (D) represents the arrangement state of the inner lens (INL) or optical waveguide (WG) in the XY plane, and FIG. 31 (E) represents the arrangement state of the photoelectric conversion region (12) and the through electrode (17) in the XY plane. Additionally, in FIG. 31 (B), the symbols (PR9, PR9A) represent red pixels (P9, P9A), the symbols (PG9, PG9A) represent green pixels (P9, P9A), and the symbols (PB9, PB9A) represent blue pixels (P9, P9A). Also, in FIG. 31 (E), the through electrode (17) is positioned at the four corners of the photoelectric conversion region (12) near the boundary between adjacent photoelectric conversion regions (12), but the position of the through electrode (17) is not limited to this. For example, the through electrode (17) may be positioned at the middle of the four corners of the photoelectric conversion region (12). Alternatively, a through electrode (17) may be placed at each of the four corner portions of the photoelectric conversion area (12) and the intermediate position between the four corner portions of the photoelectric conversion area (12), near the boundary between adjacent photoelectric conversion areas (12). In addition, although a pixel-to-pixel area light-blocking film (43) is described in (E) of FIG. 31, pixels (P9, P9A) of the present embodiment and variations thereof may not have a pixel-to-pixel area light-blocking film (43).

[0187] In the pixels (P9, 9A) of the present embodiment and its variations, an inner lens (INL) or an optical waveguide (WG) is provided, so even if the incident light is obliquely angled toward the back surface (11B) that expands within the XY plane, for example, vignetting can be avoided at the inter-pixel area light-blocking wall (16) and oblique incident light characteristics can be improved.

[0188] Additionally, as illustrated in FIGS. 32A and 32B, for each pixel (P9), the center position of the color filter (52) and the center position of the photoelectric conversion area (12) may be offset by half in both the X-axis direction and the Y-axis direction. At that time, the placement position of the inner lens (INL) may also be shifted in accordance with the placement position of the photoelectric conversion area (12). By doing so, the deviation in the reception sensitivity of infrared light in each photoelectric conversion area (12) can be reduced, or color mixing between adjacent pixels (P9) can be suppressed. Additionally, FIGS. 32A and 32B schematically illustrate a modified example of the arrangement state of a plurality of pixels (P9) in the pixel section (100). FIG. 32A particularly shows the positional relationship between the on-chip lens (54), the photoelectric conversion area (12), the through electrode (17), and the reading electrode (26). FIG. 32B specifically illustrates the positional relationship between the on-chip lens (54), the color filter (52), the inner lens (INL), and the photoelectric conversion region (12). The same applies to a pixel (9A) using an optical waveguide (WG) instead of an inner lens (INL). Furthermore, even if an inner lens (INL) or an optical waveguide (WG) is not used, the center position of the color filter (52) and the center position of the photoelectric conversion region (12) may be offset by half in both the X-axis direction and the Y-axis direction, in the same manner as the embodiment shown in FIG. 32A and FIG. 32B. Additionally, the placement positions of the through electrode (17) and the reading electrode (26) in the plurality of pixels (P9, P9A) arranged in the pixel portion (100) of the present disclosure are not limited to the placement positions shown in FIG. 31 and FIG. 32A.

[0189] <10. 10th Embodiment>

[0190] FIGS. 33A and FIGS. 33B are, respectively, an enlarged longitudinal cross-sectional view and a horizontal cross-sectional view of the vicinity of the through electrode (17) in the imaging element as the tenth embodiment. FIGS. 33A also shows a cross-section along the AA cutting line shown in FIG. 33B. The configuration of the present embodiment is applicable to any of the pixels (P1 to P9) in the first to ninth embodiments and each pixel as a variation thereof.

[0191] The present embodiment has a configuration in which a metal layer (18) extending in the Z-axis direction is provided while surrounding a through electrode (17) in an XY cross-section. The through electrode (17) and the metal layer (18) are electrically insulated by an insulating layer (Z1) that fills the gap between them. The metal layer (18) may, for example, serve as a light-blocking wall (16) for the inter-pixel area. A fixed charge layer (13) is provided on the outer side of the metal layer (18) through an insulating layer (Z2).

[0192] The penetrating electrode (17) is formed, for example, by tungsten (W), etc. Additionally, the metal layer (18) is formed, for example, by tungsten (W). Furthermore, aluminum, etc. may be used for the metal layer (18). The insulating layer (Z1, Z2) is formed, for example, by an insulating material such as SiOx (silicon oxide) or aluminum oxide. In addition, instead of the insulating layer (Z1), an air gap may be provided between the inter-pixel area light-blocking wall (16) and the penetrating electrode (17) to provide insulation between the inter-pixel area light-blocking wall (16) and the penetrating electrode (17). Likewise, instead of the insulating layer (Z2), an air gap may be provided between the inter-pixel area light-blocking wall (16) and the fixed charge layer (13) to provide insulation between the inter-pixel area light-blocking wall (16) and the fixed charge layer (13). In addition, the constituent material of each component is not limited to that described above.

[0193] The penetrating electrode (17) is a transmission path that transmits signal charges generated in the organic photoelectric conversion unit (20), for example, or transmits voltage that drives the charge accumulation electrode (25). The metal layer (18) is a light-blocking wall between pixels and also serves as an electrostatic shield. If the metal layer (18) is not present, when a static voltage is applied to the penetrating electrode (17) when the fixed charge layer (13) has, for example, a negative fixed charge, the function of the fixed charge layer (13) is damaged, which may cause the generation of a dark current. Therefore, by providing the metal layer (18) to electrically shield the penetrating electrode (17) and the fixed charge layer (13), the generation of such a dark current can be suppressed. Additionally, regarding the portion of the metal layer (18) shown in FIG. 33B other than the portion surrounding the penetrating electrode (17), it may be replaced with a non-conductive material as a light-blocking material. This is because if the portion surrounding the penetrating electrode (17) is a metal layer (18) formed by a metal material such as tungsten or aluminum, the effect of the electrostatic shielding film described above is obtained. In addition, when the metal layer (18) is provided as an electrostatic shielding film, it is not necessary to provide a portion of the metal layer (18) other than the portion surrounding the penetrating electrode (17).

[0194] Additionally, the area near the through electrode (17) may be configured as shown in FIG. 34A and FIG. 34B. The configuration shown in FIG. 34A and FIG. 34B is the same as the configuration shown in FIG. 33A and FIG. 33B, except that it does not have a fixed charge layer (13) arranged to face the metal layer (18) through an insulating layer (Z2). The metal layer (18) is a light-blocking wall in the pixel area and is configured to shield the electric field of the through electrode and prevent the influence of the voltage applied to the through electrode (17) from affecting the semiconductor substrate (11). Additionally, by applying an appropriate voltage to the metal layer (18), an effect similar to that of the fixed charge layer may be achieved. Furthermore, regarding the portion of the metal layer (18) shown in FIG. 34B other than the portion surrounding the through electrode (17), the light-blocking material may be replaced with a non-conductive material. In addition, in the configurations shown in FIG. 34A and FIG. 34B, it is preferable to provide a fixed charge layer (13) on the back side (11B) of the semiconductor substrate (11).

[0195] In addition, the configuration of the embodiment shown in FIGS. 33A and 33B and FIGS. 34A and 34B, respectively, that is, the configuration of providing a metal layer (18) that surrounds the penetrating electrode (17) in the XY cross-section and extends in the Z-axis direction, is applicable to a pixel other than that shown in the first to ninth embodiments, etc. For example, it is applicable to a pixel (P10) as a modified example of the tenth embodiment shown in FIG. 35. In the pixel (P10), the reading electrode (26) is extended over, for example, the entire pixel (P10), and it does not have a semiconductor layer (21) and a charge accumulation electrode (25). Also, in the pixel (P10) of FIG. 35, one TG (141) and one FD (15), etc., are provided for each photoelectric conversion region (12). In addition, as described above, a metal layer (18) that also serves as a light-blocking wall (16) between pixels is provided. Except for these points, the pixel (P10) of FIG. 35 has substantially the same configuration as the pixel (P1) shown in FIG. 2A, etc. Additionally, although the pixel (P10) in FIG. 35 is configured to have a color filter (52), the pixel (P10) may not require the provision of a color filter (52). Furthermore, the wavelength ranges exhibiting sensitivity in the organic photoelectric conversion unit (20) and the photoelectric conversion unit (10) in the pixel (P10) can be arbitrarily set. Additionally, the organic photoelectric conversion layer (22) of the organic photoelectric conversion unit (20) may be composed of a photoelectric conversion material other than an organic material, for example, a quantum dot.

[0196] <11. 11th Embodiment>

[0197] FIG. 36A is a schematic diagram illustrating an example of the overall configuration of a photodetection system (201) according to the eleventh embodiment of the present disclosure. FIG. 36B is a schematic diagram illustrating an example of the circuit configuration of a photodetection system (201). The photodetection system (201) is equipped with a light-emitting device (210) as a light source unit that emits infrared light (L2) and a photodetection device (220) as a light-receiving unit having a photoelectric conversion element. The solid-state imaging device (1) described above may be used as the photodetection device (220). The photodetection system (201) may also be equipped with a system control unit (230), a light source driving unit (240), a sensor control unit (250), a light source-side optical system (260), and a camera-side optical system (270).

[0198] The light detection device (220) can detect light (L1) and light (L2). Light (L1) is light reflected from the subject (measurement target) (200) (Fig. 36A) by ambient light from the outside. Light (L2) is light reflected from the subject (200) after being emitted from the light-emitting device (210). Light (L1) is, for example, visible light, and light (L2) is, for example, infrared light. Light (L1) can be detected by the organic photoelectric conversion unit in the light detection device (220), and light (L2) can be detected by the photoelectric conversion unit in the light detection device (220). Image information of the subject (200) can be obtained from light (L1), and distance information between the subject (200) and the light detection system (201) can be obtained from light (L2). The light detection system (201) can be mounted on electronic devices such as smartphones or on mobile devices such as cars. The light-emitting device (210) can be composed of, for example, a semiconductor laser, a surface-emitting semiconductor laser, or a vertical resonator-type surface-emitting laser (VCSEL). As a method of detection by the light (L2) emitted from the light-emitting device (210) by the light detection device (220), for example, an iTOF method may be adopted, but is not limited thereto. In the iTOF method, the photoelectric converter can measure the distance to the subject (200) by, for example, Time-of-Flight (TOF). As a method of detection by the light (L2) emitted from the light-emitting device (210) by the light detection device (220), for example, a structured light method or a stereo vision method may be adopted. For example, in the structured light method, the distance between the light detection system (201) and the subject (200) can be measured by projecting a predetermined pattern of light onto the subject (200) and analyzing the distortion state of the pattern. In addition, in the stereo vision method, for example, the distance between the light detection system (201) and the subject can be measured by using two or more cameras and acquiring two or more images of the subject (200) viewed from two or more different viewpoints.In addition, the light-emitting device (210) and the light-detecting device (220) can be synchronously controlled by the system control unit (230).

[0199] <12. Applications to Electronic Devices>

[0200] FIG. 37 is a block diagram illustrating an example configuration of an electronic device (2000) to which the present technology is applied. The electronic device (2000) has a function as, for example, a camera.

[0201] The electronic device (2000) is equipped with an optical unit (2001) consisting of a lens group, etc., a light detection device (2002) to which the above-described solid-state imaging device (1), etc. (hereinafter referred to as the solid-state imaging device (1), etc.) is applied, and a Digital Signal Processor (DSP) circuit (2003) which is a camera signal processing circuit. In addition, the electronic device (2000) is also equipped with a frame memory (2004), a display unit (2005), a recording unit (2006), an operation unit (2007), and a power supply unit (2008). The DSP circuit (2003), the frame memory (2004), the display unit (2005), the recording unit (2006), the operation unit (2007), and the power supply unit (2008) are connected to each other through a bus line (2009).

[0202] The optical unit (2001) receives incident light (image light) from a subject and forms an image on the imaging surface of the light detection device (2002). The light detection device (2002) converts the amount of incident light formed on the imaging surface by the optical unit (2001) into an electrical signal in pixel units and outputs it as a pixel signal.

[0203] The display unit (2005) is composed of a panel-type display device, such as a liquid crystal panel or an organic EL panel, for example, and displays a video or still image captured by a light detection device (2002). The recording unit (2006) records the video or still image captured by the light detection device (2002) on a recording medium such as a hard disk or semiconductor memory.

[0204] The control unit (2007) issues operation commands regarding various functions of the electronic device (2000) under operation by the user. The power supply unit (2008) appropriately supplies various power sources to these supply targets, which serve as operating power sources for the DSP circuit (2003), frame memory (2004), display unit (2005), recording unit (2006), and control unit (2007).

[0205] As described above, by using the solid imaging device (1) described above as the light detection device (2002), it is possible to expect to obtain a good image.

[0206] <13. Applications to In-Bodi Information Acquisition Systems>

[0207] The technology of the present disclosure (the technology) can be applied to various products. For example, the technology of the present disclosure may be applied to endoscopic surgical systems.

[0208] FIG. 38 is a block diagram illustrating an example of a schematic configuration of a system for acquiring information within a patient's body using a capsule endoscope to which the technology of the present disclosure (the present technology) can be applied.

[0209] The internal information acquisition system (10001) consists of a capsule endoscope (10100) and an external control device (10200).

[0210] The capsule endoscope (10100) is swallowed by the patient during the examination. The capsule endoscope (10100) has imaging and wireless communication functions, and while moving through the inside of organs such as the stomach or intestines by peristaltic movement during the period until it is naturally expelled from the patient, it sequentially captures images of the inside of the organ (hereinafter also referred to as internal images) at predetermined intervals and sequentially wirelessly transmits information regarding the internal images to an external control device (10200) outside the body.

[0211] The external control device (10200) comprehensively controls the operation of the internal information acquisition system (10001). Additionally, the external control device (10200) receives information regarding an internal image transmitted from a capsule-type endoscope (10100) and generates image data for displaying the internal image on a display device (not shown) based on the received information regarding the internal image.

[0212] In this way, the internal information acquisition system (10001) can obtain internal images of the patient's internal condition from time to time between the time the capsule endoscope (10100) is swallowed and when it is expelled.

[0213] The configuration and function of the capsule endoscope (10100) and the external control device (10200) will be described in more detail.

[0214] The capsule-type endoscope (10100) has a capsule-type body (10101), and the body (10101) contains a light source unit (10111), an imaging unit (10112), an image processing unit (10113), a wireless communication unit (10114), a power supply unit (10115), a power supply unit (10116), and a control unit (10117).

[0215] The light source unit (10111) is composed of a light source such as an LED (light emitting diode) and irradiates light onto the imaging field of the imaging unit (10112).

[0216] The imaging unit (10112) is composed of an optical system consisting of an imaging element and a plurality of lenses provided at the front of the imaging element. Reflected light (hereinafter referred to as observation light) irradiated onto body tissue to be observed is collected by the optical system and incident on the imaging element. In the imaging unit (10112), the observation light incident thereon is photoelectrically converted at the imaging element, and an image signal corresponding to the observation light is generated. The image signal generated by the imaging unit (10112) is provided to the image processing unit (10113).

[0217] The image processing unit (10113) is configured by a processor such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit) and performs various signal processing on the image signal generated by the imaging unit (10112). The image processing unit (10113) provides the image signal, on which signal processing has been performed, to the wireless communication unit (10114) as RAW data.

[0218] The wireless communication unit (10114) performs a predetermined processing, such as modulation processing, on an image signal that has been processed by the image processing unit (10113), and transmits the image signal to an external control device (10200) through an antenna (10114A). Additionally, the wireless communication unit (10114) receives a control signal regarding the driving control of a capsule-type endoscope (10100) from the external control device (10200) through the antenna (10114A). The wireless communication unit (10114) provides the control signal received from the external control device (10200) to the control unit (10117).

[0219] The power supply unit (10115) is composed of an antenna coil for receiving power, a power regeneration circuit that regenerates power from the current generated in the antenna coil, and a boost circuit. In the power supply unit (10115), power is generated using the principle of so-called non-contact charging.

[0220] The power supply unit (10116) is composed of a secondary battery and stores power generated by the power supply unit (10115). In FIG. 38, to avoid complicating the drawing, the illustration of arrows indicating the source of power supply from the power supply unit (10116) is omitted, but the power stored in the power supply unit (10116) is supplied to the light source unit (10111), the imaging unit (10112), the image processing unit (10113), the wireless communication unit (10114), and the control unit (10117), and can be used to drive them.

[0221] The control unit (10117) is configured by a processor such as a CPU and appropriately controls the operation of the light source unit (10111), the imaging unit (10112), the image processing unit (10113), the wireless communication unit (10114), and the power supply unit (10115) according to a control signal transmitted from an external control device (10200).

[0222] The external control device (10200) is composed of a processor such as a CPU or GPU, or a microcomputer or control board in which a processor and a memory element such as memory are combined. The external control device (10200) controls the operation of the capsule endoscope (10100) by transmitting a control signal to the control unit (10117) of the capsule endoscope (10100) through the antenna (10200A). In the capsule endoscope (10100), for example, the irradiation conditions of light on the observation target in the light source unit (10111) can be changed by the control signal from the external control device (10200). In addition, the imaging conditions (for example, the frame rate, exposure value, etc. in the imaging unit (10112)) can be changed by the control signal from the external control device (10200). Additionally, the content of the processing in the image processing unit (10113) or the conditions under which the wireless communication unit (10114) transmits the image signal (e.g., transmission interval, number of transmitted images, etc.) may be changed by a control signal from an external control device (10200).

[0223] Additionally, the external control device (10200) performs various image processing on the image signal transmitted from the capsule endoscope (10100) and generates image data for displaying the captured internal body image on a display device. As for the image processing, various signal processing can be performed, for example, development processing (demosaic processing), high-definition processing (band strength processing, super-resolution processing, NR (Noise reduction) processing and / or hand tremor correction processing, etc.), and / or enlargement processing (electronic zoom processing). The external control device (10200) controls the operation of the display device to display the captured internal body image based on the generated image data. Alternatively, the external control device (10200) may record the generated image data in a recording device (not shown) or print output to a printing device (not shown).

[0224] For the above, an example of an in-body information acquisition system to which the technology of the present disclosure may be applied has been described. The technology of the present disclosure may be applied, for example, to the imaging unit (10112) among the configurations described above. Because of this, a small size and high image detection precision can be obtained.

[0225] <14. Applications to Endoscopic Surgical Systems>

[0226] The technology of the present disclosure (the technology) can be applied to various products. For example, the technology of the present disclosure may be applied to endoscopic surgical systems.

[0227] FIG. 39 is a drawing illustrating an example of a schematic configuration of an endoscopic surgical system to which the technology of the present disclosure (the technology) can be applied.

[0228] FIG. 39 illustrates a state in which a surgeon (doctor) (11131) is performing surgery on a patient (11132) on a patient bed (11133) using an endoscopic surgery system (11000). As illustrated, the endoscopic surgery system (11000) is composed of an endoscope (11100), other surgical instruments (11110) such as a retractable tube (11111) or an energy treatment device (11112), a support arm device (11120) that supports the endoscope (11100), and a cart (11200) equipped with various devices for endoscopic surgery.

[0229] The endoscope (11100) is composed of a tube (11101) into which a predetermined length of area from the tip is inserted into the body cavity of a patient (11132), and a camera head (11102) connected to the base of the tube (11101). In the illustrated example, the endoscope (11100) is configured as a so-called rigid endoscope having a rigid tube (11101), but the endoscope (11100) may also be configured as a so-called flexible endoscope having a flexible tube.

[0230] An opening fitted with an objective lens is provided at the tip of the tube (11101). A light source device (11203) is connected to the endoscope (11100), and light generated by the light source device (11203) is guided to the tip of the tube by a light guide extended inside the tube (11101) and directed toward an object of observation inside the body cavity of the patient (11132) through the objective lens. Additionally, the endoscope (11100) may be a direct-viewing endoscope, a strabismus endoscope, or a lateral-viewing endoscope.

[0231] An optical system and an image element are provided inside the camera head (11102), and reflected light (observation light) from the object to be observed is collected by the optical system and directed to the image element. The observation light is photoelectrically converted by the image element, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image, is generated. The image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) (11201).

[0232] The CCU (11201) is composed of a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit) and comprehensively controls the operation of the endoscope (11100) and the display device (11202). In addition, the CCU (11201) receives an image signal from the camera head (11102) and performs various image processing on the image signal to display an image based on the image signal, such as developing processing (demosaic processing).

[0233] The display device (11202) displays an image based on an image signal for which image processing has been performed by the CCU (11201) under control from the CCU (11201).

[0234] The light source device (11203) is composed of a light source such as an LED (light emitting diode) and supplies illumination light to the endoscope (11100) when photographing the surgical site, etc.

[0235] The input device (11204) is an input interface for the endoscopic surgery system (11000). The user can input various information or instructions to the endoscopic surgery system (11000) through the input device (11204). For example, the user inputs instructions such as changing the imaging conditions (type of illumination light, magnification, focal length, etc.) by the endoscope (11100).

[0236] The treatment device control device (11205) controls the operation of the energy treatment device (11112) for tissue cauterization, incision, or encapsulation of blood vessels. The pneumoconiosis device (11206) sends gas into the body cavity through the pneumoconiosis tube (11111) to expand the body cavity of the patient (11132) for the purpose of securing a field of view by the endoscope (11100) and securing a workspace for the surgeon. The recorder (11207) is a device capable of recording various information regarding the surgery. The printer (11208) is a device capable of printing various information regarding the surgery in various formats such as text, images, or graphs.

[0237] Additionally, the light source device (11203) that supplies illumination light when photographing the surgical site with the endoscope (11100) can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device (11203). In addition, in this case, it is also possible to capture images corresponding to each RGB in time division by irradiating laser light from each of the RGB laser light sources onto the object of observation in time division and controlling the driving of the imaging element of the camera head (11102) in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter in the imaging element.

[0238] Additionally, the light source device (11203) may be controlled to change the intensity of the light it outputs at predetermined intervals. By controlling the driving of the imaging element of the camera head (11102) in synchronization with the timing of the change in the intensity of the light, images can be acquired in time division, and by synthesizing the images, a high dynamic range image without so-called black fade and white fade can be generated.

[0239] Additionally, the light source device (11203) may be configured to supply light of a predetermined wavelength band corresponding to special light observation. In special light observation, for example, so-called Narrow Band Imaging is performed by irradiating a narrow band of light compared to the irradiation light (i.e., white light) used in normal observation, thereby capturing a predetermined tissue, such as a blood vessel on the surface of a mucous membrane, with high contrast by utilizing the wavelength dependence of light absorption in body tissue. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image by irradiating an excitation light to obtain an image of fluorescence generated by irradiating an excitation light. In fluorescence observation, excitation light may be irradiated onto body tissue and fluorescence from said body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) may be locally injected into body tissue and excitation light corresponding to the fluorescence wavelength of said reagent may be irradiated onto said body tissue to obtain a fluorescence image. The light source device (11203) may be configured to supply narrowband light and / or excitation light corresponding to such special light observation.

[0240] FIG. 40 is a block diagram illustrating an example of the functional configuration of the camera head (11102) and CCU (11201) shown in FIG. 39.

[0241] The camera head (11102) has a lens unit (11401), an imaging unit (11402), a driving unit (11403), a communication unit (11404), and a camera head control unit (11405). The CCU (11201) has a communication unit (11411), an image processing unit (11412), and a control unit (11413). The camera head (11102) and the CCU (11201) are connected to communicate with each other by a transmission cable (11400).

[0242] The lens unit (11401) is an optical system provided at the connection point with the lens barrel (11101). Observation light introduced from the tip of the lens barrel (11101) is guided to the camera head (11102) and enters the lens unit (11401). The lens unit (11401) is composed of a combination of multiple lenses, including a zoom lens and a focus lens.

[0243] The imaging element constituting the imaging unit (11402) may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit (11402) is configured as a multi-plate type, for example, image signals corresponding to each RGB may be generated by each imaging element and a color image may be obtained by synthesizing them. Alternatively, the imaging unit (11402) may be configured to have a pair of imaging elements to acquire image signals for the right eye and the left eye, respectively, corresponding to a 3D (dimensional) display. By performing a 3D display, the surgeon (11131) can more accurately determine the depth of the biological tissue in the surgical area. In addition, when the imaging unit (11402) is configured as a multi-plate type, multiple lens units (11401) may also be provided in a system corresponding to each imaging element.

[0244] Additionally, the imaging unit (11402) does not necessarily have to be provided in the camera head (11102). For example, the imaging unit (11402) may be provided inside the lens barrel (11101) immediately after the objective lens.

[0245] The driving unit (11403) is configured by an actuator and moves the zoom lens and focus lens of the lens unit (11401) by a predetermined distance along the optical axis by control from the camera head control unit (11405). By doing so, the magnification and focus of the image captured by the imaging unit (11402) can be appropriately adjusted.

[0246] The communication unit (11404) is configured by a communication device for transmitting and receiving various information between the CCU (11201) and the CCU (11201). The communication unit (11404) transmits an image signal obtained from the imaging unit (11402) as RAW data to the CCU (11201) through the transmission cable (11400).

[0247] Additionally, the communication unit (11404) receives a control signal from the CCU (11201) to control the driving of the camera head (11102) and supplies it to the camera head control unit (11405). The control signal includes information regarding imaging conditions, such as, for example, information for specifying the frame rate of the captured image, information for specifying the exposure value during imaging, and / or information for specifying the magnification and focus of the captured image.

[0248] In addition, the above-mentioned imaging conditions, such as frame rate, exposure value, magnification, and focus, may be appropriately specified by the user or may be automatically set by the control unit (11413) of the CCU (11201) based on the acquired image signal. In the latter case, so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are equipped in the endoscope (11100).

[0249] The camera head control unit (11405) controls the operation of the camera head (11102) based on a control signal from the CCU (11201) received through the communication unit (11404).

[0250] The communication unit (11411) is configured by a communication device for transmitting and receiving various information between the camera head (11102). The communication unit (11411) receives an image signal transmitted from the camera head (11102) through a transmission cable (11400).

[0251] Additionally, the communication unit (11411) transmits a control signal to the camera head (11102) to control the driving of the camera head (11102). The image signal or the control signal can be transmitted via electrical communication or optical communication, etc.

[0252] The image processing unit (11412) performs various image processing on the image signal, which is RAW data transmitted from the camera head (11102).

[0253] The control unit (11413) performs various controls regarding the imaging of the surgical area, etc. by the endoscope (11100) and the display of the image obtained by the imaging of the surgical area, etc. For example, the control unit (11413) generates a control signal to control the driving of the camera head (11102).

[0254] Additionally, the control unit (11413) displays an image of a surgical site, etc., on a display device (11202) based on an image signal for which image processing has been performed by the image processing unit (11412). At this time, the control unit (11413) may recognize various objects within the image using various image recognition technologies. For example, the control unit (11413) may recognize surgical instruments such as forceps, specific biological parts, bleeding, or mist when using an energy treatment instrument (11112) by detecting the shape or color of the edges of objects included in the image. When displaying the image on the display device (11202), the control unit (11413) may superimpose various surgical support information onto the image of the surgical site using the recognition results. By overlapping and presenting surgical support information to the surgeon (11131), the burden on the surgeon (11131) is reduced, and it becomes possible for the surgeon (11131) to proceed with the surgery reliably.

[0255] The transmission cable (11400) connecting the camera head (11102) and the CCU (11201) is an electric signal cable corresponding to the communication of electric signals, an optical fiber corresponding to optical communication, or a composite cable thereof.

[0256] Here, in the example illustrated, communication was performed via a wired connection using a transmission cable (11400), but communication between the camera head (11102) and the CCU (11201) may be performed wirelessly.

[0257] The foregoing has described an example of an endoscopic surgical system to which the technology of the present disclosure may be applied. The technology of the present disclosure may be applied, for example, to the imaging unit (11402) of the camera head (11102) among the configurations described above. By applying the technology of the present disclosure to the imaging unit (10402), a clearer image of the surgical site can be obtained, thereby improving the visibility of the surgical site for the surgeon.

[0258] In addition, while an endoscopic surgical system has been described herein as an example, the technology of the present disclosure may be applied to other systems, such as microscopic surgical systems.

[0259] <15. Applications to Moving Objects>

[0260] The technology of the present disclosure (the technology) can be applied to various products. For example, the technology of the present disclosure may be realized as a device mounted on any one type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, an automatic two-wheeled vehicle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.

[0261] FIG. 41 is a block diagram illustrating a schematic configuration of a vehicle control system, which is an example of a moving object control system to which the technology of the present disclosure may be applied.

[0262] The vehicle control system (12000) is equipped with a plurality of electronic control units connected via a communication network (12001). In the example illustrated in FIG. 35, the vehicle control system (12000) is equipped with a drivetrain control unit (12010), a body system control unit (12020), an external information detection unit (12030), an internal information detection unit (12040), and an integrated control unit (12050). Additionally, as a functional configuration of the integrated control unit (12050), a microcomputer (12051), a voice-image output unit (12052), and a vehicle-mounted network interface (12053) are illustrated.

[0263] The drivetrain control unit (12010) controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit (12010) functions as a control device for a driving force generating device for generating the driving force of a vehicle, such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating the braking force of the vehicle.

[0264] The body control unit (12020) controls the operation of various devices equipped on the vehicle body according to various programs. For example, the body control unit (12020) functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlights, taillights, brake lamps, turn signals, or fog lamps. In this case, radio waves transmitted from a portable device that replaces a key or signals from various switches may be input to the body control unit (12020). The body control unit (12020) receives the input of these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0265] The external information detection unit (12030) detects external information of a vehicle equipped with a vehicle control system (12000). For example, an imaging unit (12031) is connected to the external information detection unit (12030). The external information detection unit (12030) captures an image of the outside of the vehicle with the imaging unit (12031) and receives the captured image. The external information detection unit (12030) may perform object detection processing, such as people, vehicles, obstacles, signs, or text on the road surface, or distance detection processing based on the received image.

[0266] The imaging unit (12031) is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit (12031) may output the electrical signal as an image or as information for distance measurement. Additionally, the light received by the imaging unit (12031) may be visible light or non-visible light such as infrared light.

[0267] The in-vehicle information detection unit (12040) detects information inside the vehicle. For example, a driver state detection unit (12041) that detects the driver's state is connected to the in-vehicle information detection unit (12040). For example, the driver state detection unit (12041) includes a camera that captures the driver, and the in-vehicle information detection unit (12040) may calculate the driver's fatigue level or concentration level based on the detection information input from the driver state detection unit (12041), or determine whether the driver is sitting and dozing off.

[0268] The microcomputer (12051) can calculate the control target value of the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle obtained from the vehicle information detection unit (12030) or the vehicle information detection unit (12040), and output a control command to the drive system control unit (12010). For example, the microcomputer (12051) can perform cooperative control aimed at realizing functions of ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0269] In addition, the microcomputer (12051) can perform cooperative control for the purpose of autonomous driving without driver operation by controlling a driving force generating device, a steering mechanism, or a braking device based on information about the vehicle's surroundings obtained from an external information detection unit (12030) or an internal information detection unit (12040).

[0270] Additionally, the microcomputer (12051) can output a control command to the body system control unit (12030) based on information from outside the vehicle obtained from the outside information detection unit (12030). For example, the microcomputer (12051) can perform cooperative control aimed at preventing glare, such as controlling the headlamps to switch the high beam to the low beam in response to the position of the preceding vehicle or the opposing vehicle detected by the outside information detection unit (12030).

[0271] The voice-image output unit (12052) transmits an output signal of at least one of voice and image to an output device capable of notifying information visually or audibly to the occupants of the vehicle or outside the vehicle. In the example of FIG. 41, an audio speaker (12061), a display unit (12062), and an instrument panel (12063) are exemplified as output devices. The display unit (12062) may include, for example, at least one on-board display and a head-up display.

[0272] FIG. 42 is a drawing illustrating an example of the installation location of the imaging unit (12031).

[0273] In FIG. 42, as an imaging unit (12031), it has imaging units (12101, 12102, 12103, 12104, 12105).

[0274] The imaging units (12101, 12102, 12103, 12104, 12105) are provided at locations such as the front nose, side mirrors, rear bumpers, back doors, and the upper part of the front glass inside the vehicle (12100). The imaging unit (12101) provided on the front nose and the imaging unit (12105) provided on the upper part of the front glass inside the vehicle mainly acquire images of the front of the vehicle (12100). The imaging units (12102, 12103) provided on the side mirrors mainly acquire images of the side of the vehicle (12100). The imaging unit (12104) provided on the rear bumper or back door mainly acquires images of the rear of the vehicle (12100). The imaging unit (12105) provided on the upper part of the front glass inside the vehicle is mainly used for detecting preceding vehicles or pedestrians, obstacles, signals, traffic signs or lanes, etc.

[0275] Additionally, FIG. 42 illustrates an example of the shooting range of the imaging units (12101 to 12104). The imaging range (12111) represents the imaging range of the imaging unit (12101) provided on the front nose, the imaging ranges (12112, 12113) represent the imaging ranges of the imaging units (12102, 12103) provided on the side mirrors, respectively, and the imaging range (12114) represents the imaging range of the imaging unit (12104) provided on the rear bumper or back door. For example, an overhead view image of the vehicle (12100) is obtained by overlapping image data captured by the imaging units (12101 to 12104).

[0276] At least one of the imaging units (12101 to 12104) may have a function for acquiring distance information. For example, at least one of the imaging units (12101 to 12104) may be a stereo camera composed of a plurality of imaging elements, or an imaging element having a pixel for phase difference detection.

[0277] For example, the microcomputer (12051) can determine the distance to each object within the imaging range (12111 to 12114) and the temporal change of this distance (relative speed with respect to the vehicle (12100)) based on distance information obtained from the imaging unit (12101 to 12104), and thereby extract the closest object on the vehicle (12100) that is traveling at a predetermined speed (e.g., 0 km / h or higher) in the direction approximately the same as the vehicle (12100) as the leading vehicle. In addition, the microcomputer (12051) can set a distance between the leading vehicle and the vehicle to be secured in advance and perform automatic brake control (including follow-up stop control) or automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of autonomous driving, such as driving autonomously without relying on the driver's operation.

[0278] For example, the microcomputer (12051) can classify and extract object data regarding objects based on distance information obtained from the imaging unit (12101 to 12104), classifying them into objects such as motorcycles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other objects, and use them for automatic avoidance of obstacles. For example, the microcomputer (12051) identifies obstacles around the vehicle (12100) as obstacles that are visible to the driver of the vehicle (12100) and obstacles that are difficult to see. Then, the microcomputer (12051) determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is greater than a set value and there is a possibility of a collision, it can provide driving support for collision avoidance by outputting an alarm to the driver through the audio speaker (12061) or display unit (12062), or by performing forced deceleration or evasive steering through the drive system control unit (12010).

[0279] At least one of the imaging units (12101 to 12104) may be an infrared camera that detects infrared rays. For example, a microcomputer (12051) can recognize a pedestrian by determining whether a pedestrian exists in the image captured by the imaging units (12101 to 12104). This recognition of a pedestrian is performed by a sequence of extracting feature points from the image captured by the imaging units (12101 to 12104), for example, as an infrared camera, and a sequence of performing pattern matching processing on a series of feature points representing the outline of an object to determine whether it is a pedestrian. When the microcomputer (12051) determines that a pedestrian exists in the image captured by the imaging units (12101 to 12104) and recognizes the pedestrian, the voice image output unit (12052) controls the display unit (12062) to superimpose a rectangular outline for emphasis on the recognized pedestrian. Additionally, the voice and image output unit (12052) may control the display unit (12062) to display an icon representing a pedestrian, etc., at a desired location.

[0280] The above describes an example of a vehicle control system to which the technology of the present disclosure may be applied. The technology of the present disclosure may be applied to, for example, the imaging unit (12031) among the configurations described above. By applying the technology of the present disclosure to the imaging unit (12031), it is possible to obtain a more viewable image, thereby reducing driver fatigue.

[0281] <16. Other Variations>

[0282] Although the present disclosure has been described above with reference to several embodiments, variations, and examples of their application or use (hereinafter referred to as embodiments, etc.), the present disclosure is not limited to the above embodiments, etc., and various modifications are possible. For example, the present disclosure is not limited to back-illuminated image sensors but can also be applied to surface-illuminated image sensors.

[0283] In addition, the imaging device of the present disclosure may be in the form of a module in which an imaging unit, a signal processing unit, or an optical system is integrated and packaged.

[0284] In addition, although the above embodiments, etc., describe a solid-state imaging device that converts the amount of incident light formed on an imaging surface through an optical lens system into an electrical signal on a pixel-by-pixel basis and outputs it as a pixel signal, and an imaging element mounted thereon, the photoelectric conversion element of the present disclosure is not limited to such an imaging element. For example, it may detect and receive light from a subject, and generate and accumulate an electric charge corresponding to the amount of received light through photoelectric conversion. The output signal may be an image information signal or a distance measurement information signal.

[0285] In addition, although the above embodiments have been described by exemplifying the case where the photoelectric converter (10) as the second photoelectric converter is an iTOF sensor, the present disclosure is not limited thereto. That is, the second photoelectric converter is not limited to detecting light having a wavelength in the infrared light range, and may also detect light of a wavelength in a different wavelength range. Furthermore, if the photoelectric converter (10) is not an iTOF sensor, only one transmission transistor (TG) may be provided.

[0286] In addition, in the above embodiments, an imaging element is exemplified as a photoelectric conversion element of the present disclosure in which a photoelectric conversion unit (10) including a photoelectric conversion region (12) and an organic photoelectric conversion unit (20) including an organic photoelectric conversion layer (22) are stacked with an intermediate layer (40) inserted therein, but the present disclosure is not limited thereto. For example, the photoelectric conversion element of the present disclosure may have a structure in which two organic photoelectric conversion regions are stacked, or may have a structure in which two inorganic photoelectric conversion regions are stacked. In addition, in the above embodiments, the photoelectric conversion unit (10) mainly detects wavelength light in the infrared light range to perform photoelectric conversion, and the organic photoelectric conversion unit (20) mainly detects wavelength light in the visible light range to perform photoelectric conversion, but the photoelectric conversion element of the present disclosure is not limited thereto. In the photoelectric conversion element of the present disclosure, the wavelength ranges exhibiting sensitivity in the first photoelectric conversion unit and the second photoelectric conversion unit can be arbitrarily set.

[0287] Furthermore, the constituent material of each component of the photoelectric conversion element of the present disclosure is not limited to the materials specified in the above embodiments. For example, when the first photoelectric conversion unit or the second photoelectric conversion unit receives light in the visible light region and performs photoelectric conversion, the first photoelectric conversion unit or the second photoelectric conversion unit may include a quantum dot.

[0288] In addition, in the fifth embodiment, a pixel-to-pixel area light-blocking film (56) is provided between the organic photoelectric converter (20) and the on-chip lens (54) in the Z-axis direction, but in each of the embodiments and variations described above other than the fifth embodiment, a pixel-to-pixel area light-blocking film (56) may be provided in the same way.

[0289] In addition, although the above embodiments have been described by exemplifying a case in which a second photoelectric conversion layer includes a pair of gate electrodes and a pair of charge retaining members that accumulate charges arriving from the second photoelectric conversion layer via the pair of gate electrodes, the present disclosure is not limited thereto. A single gate electrode and a single charge retaining member may be provided for a single second photoelectric conversion layer. Alternatively, three or more gate electrodes and three or more charge retaining members may be provided for a single second photoelectric conversion layer. Furthermore, in the present disclosure, the transistor for reading the charge of the second photoelectric conversion layer is not limited to a so-called vertical transistor, but may also be a planar transistor.

[0290] According to a photoelectric conversion element as one embodiment of the present disclosure, by the above configuration, high-quality visible light image information and infrared light image information including distance information can be obtained, for example.

[0291] Furthermore, the effects described in this specification are merely examples and are not limited to those described; other effects may also exist. Additionally, the present technology may take the following configurations.

[0292] (1) Semiconductor substrate and,

[0293] A first photoelectric conversion unit provided on the semiconductor substrate and detecting light of a first wavelength range including a visible light range to perform photoelectric conversion, and

[0294] A second photoelectric converter that is provided within the semiconductor substrate at a position overlapping the first photoelectric converter in the thickness direction of the semiconductor substrate and detects light of a second wavelength range including an infrared light range to perform photoelectric conversion, and

[0295] Having an optical filter provided on the opposite side of the second photoelectric converter of the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0296] The above-described first photoelectric conversion unit comprises a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked, and a charge accumulation electrode disposed opposite to the first photoelectric conversion layer through an insulating layer and spaced apart from the first electrode.

[0297] (2) The second photoelectric converter is a photoelectric converter element described in (1) that can obtain distance information of an object.

[0298] (3) The second photoelectric conversion unit comprises a second photoelectric conversion layer, a pair of gate electrodes, and a pair of charge retaining units that accumulate charge reaching from the second photoelectric conversion layer via the pair of gate electrodes, respectively, the photoelectric conversion element described in (1) or (2).

[0299] (4) A photoelectric conversion element described in any one of (1) to (3), wherein a plurality of charge accumulation electrodes are provided corresponding to one of the second photoelectric conversion units.

[0300] (5) The photoelectric conversion element described in (4), wherein one optical filter is provided corresponding to one second photoelectric conversion unit and one first photoelectric conversion unit is provided corresponding to one second photoelectric conversion unit.

[0301] (6) A photoelectric conversion element described in any one of (1) to (5), wherein a plurality of charge accumulation electrodes are provided corresponding to one of the first photoelectric conversion units.

[0302] (7) A photoelectric conversion element described in any one of (1) to (6) having a pixel-area light-blocking film having a plurality of opening portions at a position corresponding to the second photoelectric conversion unit, and also having an incident side of the second photoelectric conversion unit.

[0303] (8) A photoelectric conversion element described in any one of (1) to (7) having a through electrode that extracts the charge accumulated in the charge accumulation electrode from the first photoelectric conversion unit to the opposite side of the second photoelectric conversion unit.

[0304] (9) The photoelectric conversion element described in (8) also having a metal layer surrounding the above penetrating electrode through an insulating layer.

[0305] (10) The semiconductor substrate comprises a first surface facing the first photoelectric conversion unit and a second surface opposite to the first surface, and a surface with an uneven structure formed on at least one of the first surface and the second surface, in a photoelectric conversion element described in any one of (1) to (9).

[0306] (11) The stacked structure in the first photoelectric conversion layer also includes a semiconductor layer provided between the first electrode and the first photoelectric conversion layer. The photoelectric conversion device described in any one of (1) to (10).

[0307] (12) A plurality of photoelectric conversion elements are provided,

[0308] The above photoelectric conversion element is,

[0309] semiconductor substrate and,

[0310] A first photoelectric conversion unit provided on the semiconductor substrate and detecting light of a first wavelength range including a visible light range to perform photoelectric conversion, and

[0311] A second photoelectric converter that is provided within the semiconductor substrate at a position overlapping the first photoelectric converter in the thickness direction of the semiconductor substrate and detects light of a second wavelength range including an infrared light range to perform photoelectric conversion, and

[0312] Having an optical filter provided on the opposite side of the second photoelectric converter of the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0313] The above-mentioned first photoelectric conversion unit comprises a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked, and a charge accumulation electrode disposed apart from the first electrode and positioned opposite the first photoelectric conversion layer through an insulating layer.

[0314] (13) The light detection device described in (12) also having a light-blocking film provided in the region between the adjacent photoelectric conversion elements, located between the first photoelectric conversion unit and the second photoelectric conversion unit.

[0315] (14) A light-emitting device that emits infrared light, and

[0316] A photodetector device having a photoelectric conversion element is provided,

[0317] The above photoelectric conversion device comprises a semiconductor substrate, and

[0318] A first photoelectric conversion unit provided on the semiconductor substrate and detecting visible light from the outside to perform photoelectric conversion, and

[0319] A second photoelectric converter that is provided within the semiconductor substrate at a position overlapping the first photoelectric converter in the thickness direction of the semiconductor substrate and detects the infrared light from the light-emitting device to perform photoelectric conversion, and

[0320] Having an optical filter provided on the opposite side of the second photoelectric converter of the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0321] The above-mentioned first photoelectric conversion unit comprises a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked, and a charge accumulation electrode disposed apart from the first electrode and facing the first photoelectric conversion layer through an insulating layer, thereby forming a photodetection system.

[0322] (15) The device is equipped with an optical unit, a signal processing unit, and a photoelectric conversion element,

[0323] The above photoelectric conversion element is,

[0324] semiconductor substrate and,

[0325] A first photoelectric conversion unit provided on the semiconductor substrate and detecting light of a first wavelength range including a visible light range to perform photoelectric conversion, and

[0326] A second photoelectric converter that is provided within the semiconductor substrate at a position overlapping the first photoelectric converter in the thickness direction of the semiconductor substrate and detects light of a second wavelength range including an infrared light range to perform photoelectric conversion, and

[0327] Having an optical filter provided on the opposite side of the second photoelectric converter of the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0328] The first photoelectric conversion unit comprises a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked, and an electronic device including a charge accumulation electrode disposed spaced apart from the first electrode and disposed opposite to the first photoelectric conversion layer through an insulating layer.

[0329] (16) A light-emitting device that emits a first light included in the visible light range and a second light included in the infrared light range, and

[0330] A photodetection system having a photodetection device including a photoelectric conversion element, and

[0331] The above photoelectric conversion element is,

[0332] semiconductor substrate and,

[0333] A first photoelectric conversion unit provided on the semiconductor substrate and detecting light of a first wavelength range including the first light to perform photoelectric conversion, and

[0334] A second photoelectric conversion unit provided within the semiconductor substrate at a position overlapping the first photoelectric conversion unit in the thickness direction of the semiconductor substrate, and detecting light of a second wavelength range including the second light to perform photoelectric conversion, and

[0335] Having an optical filter provided on the opposite side of the second photoelectric converter of the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0336] The above-described first photoelectric conversion unit comprises a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked, and a charge accumulation electrode disposed apart from the first electrode and facing the first photoelectric conversion layer through an insulating layer.

[0337] (17) Semiconductor substrate and,

[0338] A first photoelectric conversion unit that is provided on the semiconductor substrate and has a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked from the semiconductor substrate side, and detects light of a first wavelength range and performs photoelectric conversion, and

[0339] A second photoelectric converter that is provided within the semiconductor substrate at a position overlapping the first photoelectric converter in the thickness direction of the semiconductor substrate and detects light of a second wavelength range to perform photoelectric conversion, and

[0340] A through electrode electrically connected to the first electrode and extracting the charge generated in the first photoelectric conversion layer to the opposite side of the semiconductor substrate by viewing it from the first photoelectric conversion unit, and

[0341] A photoelectric conversion device having a metal layer surrounding the above-mentioned penetrating electrode through an insulating layer.

[0342] (18) The metal layer is arranged to surround the second photoelectric conversion element described in (17) in a plane orthogonal to the stacking direction in which the stacked structure is stacked.

[0343] (19) A light-emitting device that emits a first light included in the visible light range and a second light included in the infrared light range, and

[0344] A photodetection system having a photodetection device including a photoelectric conversion element, and

[0345] The above photoelectric conversion element is,

[0346] semiconductor substrate and,

[0347] A first photoelectric conversion unit provided on the semiconductor substrate and detecting light of a first wavelength range including the first light to perform photoelectric conversion, and

[0348] A second photoelectric conversion unit provided within the semiconductor substrate at a position overlapping the first photoelectric conversion unit in the thickness direction of the semiconductor substrate, and detecting light of a second wavelength range including the second light to perform photoelectric conversion, and

[0349] Having an optical filter provided on the opposite side of the second photoelectric converter of the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0350] The first photoelectric conversion unit comprises a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked, and an electronic device including a charge accumulation electrode disposed spaced apart from the first electrode and disposed opposite to the first photoelectric conversion layer through an insulating layer.

[0351] (20) The device is equipped with an optical unit, a signal processing unit, and a photoelectric conversion element,

[0352] The above photoelectric conversion element is,

[0353] semiconductor substrate and,

[0354] A first photoelectric conversion unit that is provided on the semiconductor substrate and has a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are sequentially stacked from the semiconductor substrate side, and detects light of a first wavelength range and performs photoelectric conversion, and

[0355] A second photoelectric converter that is provided within the semiconductor substrate at a position overlapping the first photoelectric converter in the thickness direction of the semiconductor substrate and detects light of a second wavelength range to perform photoelectric conversion, and

[0356] A through electrode electrically connected to the first electrode and extracting the charge generated in the first photoelectric conversion layer to the opposite side of the semiconductor substrate by viewing it from the first photoelectric conversion unit, and

[0357] An electronic device having a metal layer surrounding the above-mentioned penetrating electrode through an insulating layer.

[0358] This application claims priority based on U.S. Provisional Application No. 62 / 864907, filed provisionally with the United States Patent and Trademark Office on June 21, 2019, and incorporates all contents of that application by reference into this application.

[0359] A person skilled in the art will understand that various modifications, combinations, sub-combinations, and changes may be made in response to design requirements or other factors, and that these are included in the scope of the attached claims or equivalents.

Claims

Claim 1 A semiconductor substrate; a first photoelectric converter provided on the semiconductor substrate for detecting and photoelectrically converting light of a first wavelength range including a visible light range; a second photoelectric converter provided within the semiconductor substrate at a position overlapping with the first photoelectric converter in the thickness direction of the semiconductor substrate for detecting and photoelectrically converting light of a second wavelength range including an infrared light range; an optical filter provided on the first photoelectric converter for transmitting light of a predetermined color component included in a predetermined wavelength range; the first photoelectric converter includes a first electrode, a second electrode, and a third electrode, and a first photoelectric conversion layer provided between the first electrode, the second electrode, and the third electrode; the second photoelectric converter includes a first photoelectric conversion region; the optical filter includes a first color filter and a second color filter; the first color filter overlaps with the first electrode and the first photoelectric conversion region; the second color filter overlaps with the second electrode and the first photoelectric conversion region; and the first color filter transmits light of a first predetermined color component A photoelectric conversion device characterized by being configured to transmit light, wherein the second color filter is configured to transmit light of a second predetermined color component different from the first predetermined color component. Claim 2 A photoelectric conversion element according to claim 1, characterized in that the second photoelectric converter is capable of acquiring distance information of an object. Claim 3 A photoelectric conversion device according to claim 1, wherein the second photoelectric converter comprises a pair of gate electrodes and a pair of charge retaining members that each accumulate charge moving from the first photoelectric conversion region through the corresponding side of the pair of gate electrodes. Claim 4 A photoelectric conversion device according to claim 1, characterized in that a plurality of charge accumulation electrodes are provided in the second photoelectric converter. Claim 5 A photoelectric conversion device according to claim 1, wherein the first photoelectric converter includes a reading electrode disposed separately from the first electrode and the second electrode, the first photoelectric conversion layer is disposed between the reading electrode and the third electrode, and the insulating layer is disposed between the first photoelectric conversion layer and the first electrode and the second electrode. Claim 6 A photoelectric conversion element according to claim 1, characterized in that a plurality of first electrodes are provided in the first photoelectric converter. Claim 7 A photoelectric conversion device according to claim 1, further comprising an inter-pixel area light-blocking film on the light-incident side of the second photoelectric converter, wherein the inter-pixel area light-blocking film comprises a plurality of openings at a position corresponding to the second photoelectric converter. Claim 8 A photoelectric conversion device according to claim 1, further comprising a through electrode that extracts charge accumulated on the first electrode or the second electrode on the opposite side of the second photoelectric converter when viewed from the first photoelectric converter. Claim 9 A photoelectric conversion device according to claim 8, further comprising a metal layer surrounding a penetrating electrode with an insulating layer in between. Claim 10 A photoelectric conversion device according to claim 1, wherein the semiconductor substrate has a first surface opposite to the first photoelectric converter and a second surface opposite to the first surface, and an uneven structure is formed on at least one of the first surface and the second surface. Claim 11 A photoelectric conversion device according to claim 1, wherein the first photoelectric converter further comprises a semiconductor layer provided between the first electrode and the first photoelectric conversion layer. Claim 12 A photoelectric conversion device according to claim 1, wherein the first photoelectric converter includes a fourth electrode and a fifth electrode, the first photoelectric conversion layer is provided between the fourth electrode, the fifth electrode and the third electrode, the second photoelectric converter includes a second photoelectric conversion region, the optical filter includes a third color filter and a fourth color filter, the third color filter overlaps the fourth electrode and the second photoelectric conversion region, the fourth color filter overlaps the fifth electrode and the second photoelectric conversion region, the third color filter is configured to transmit light of the first predetermined color component, and the fourth color filter is configured to transmit light of the second predetermined color component. Claim 13 A plurality of photoelectric conversion elements are provided, wherein one of the photoelectric conversion elements comprises: a semiconductor substrate; a first photoelectric converter provided on the semiconductor substrate for detecting and photoelectrically converting light of a first wavelength range including a visible light range; a second photoelectric converter provided within the semiconductor substrate at a position overlapping with the first photoelectric converter in the thickness direction of the semiconductor substrate for detecting and photoelectrically converting light of a second wavelength range including an infrared light range; an optical filter provided on the first photoelectric converter for transmitting light of a predetermined color component included in a predetermined wavelength range; the first photoelectric converter comprises a first electrode, a second electrode, a third electrode, and a first photoelectric conversion layer provided between the first electrode, the second electrode, and the third electrode; the second photoelectric converter comprises a first photoelectric conversion region; the optical filter comprises a first color filter and a second color filter; the first color filter overlaps with the first electrode and the first photoelectric conversion region; and the second color filter overlaps with the second electrode and the A photodetector characterized by being superimposed on a first photoelectric conversion region, wherein the first color filter is configured to transmit light of a first predetermined color component and the second color filter is configured to transmit light of a second predetermined color component different from the first predetermined color component. Claim 14 A photodetector according to claim 13, further comprising a light-blocking film disposed between the first photoelectric converter and the second photoelectric converter in the region between adjacent photoelectric conversion elements. Claim 15 A photodetector comprising a light-emitting device that emits infrared light and a photoelectric conversion element, wherein the photoelectric conversion element comprises a semiconductor substrate and a first photoelectric converter provided on the semiconductor substrate for detecting and photoelectric converting visible light, a second photoelectric converter provided within the semiconductor substrate at a position overlapping with the first photoelectric converter in the thickness direction of the semiconductor substrate for detecting and photoelectric converting infrared light emitted from the light-emitting device, an optical filter provided on the first photoelectric converter for transmitting light of a predetermined color component included in a predetermined wavelength range, wherein the first photoelectric converter comprises a first electrode, a second electrode, a third electrode, and a first photoelectric conversion layer provided between the first electrode, the second electrode, and the third electrode, wherein the second photoelectric converter comprises a first photoelectric conversion region, and the optical filter comprises a first color filter and a second color filter, wherein the first color filter overlaps with the first electrode and the first photoelectric conversion region, and the second color filter overlaps with the second electrode and the first photoelectric conversion region, and wherein the A light detection system characterized in that a first color filter is configured to transmit light of a first predetermined color component, and a second color filter is configured to transmit light of a second predetermined color component different from the first predetermined color component. Claim 16 The apparatus comprises an optical unit, a signal processing unit, and a photoelectric conversion element, wherein the photoelectric conversion element comprises a semiconductor substrate, a first photoelectric converter provided on the semiconductor substrate for detecting and photoelectrically converting light of a first wavelength range including a visible light range, a second photoelectric converter provided within the semiconductor substrate at a position overlapping with the first photoelectric converter in the thickness direction of the semiconductor substrate for detecting and photoelectrically converting light of a second wavelength range including an infrared light range, an optical filter provided on the first photoelectric converter for transmitting light of a predetermined color component included in a predetermined wavelength range, wherein the first photoelectric converter comprises a first electrode, a second electrode, a third electrode, and a first photoelectric conversion layer provided between the first electrode, the second electrode and the third electrode, wherein the second photoelectric converter comprises a first photoelectric conversion region, and the optical filter comprises a first color filter and a second color filter, wherein the first color filter overlaps with the first electrode and the first photoelectric conversion region, and the second color filter overlaps with the second electrode and An electronic device characterized by being superimposed on the first photoelectric conversion region, wherein the first color filter is configured to transmit light of a first predetermined color component and the second color filter is configured to transmit light of a second predetermined color component different from the first predetermined color component. Claim 17 A light detection system comprising a light-emitting device and a photodetector, wherein the light-emitting device emits a first light in the visible light range and a second light in the infrared light range, and the photodetector comprises a photoelectric conversion element, wherein the photoelectric conversion element comprises a semiconductor substrate, a first photoelectric converter provided on the semiconductor substrate and detecting and photoelectrically converting light of a first wavelength range including the first light, a second photoelectric converter provided within the semiconductor substrate at a position overlapping with the first photoelectric converter in the thickness direction of the semiconductor substrate and detecting and photoelectrically converting light of a second wavelength range including the second light, an optical filter provided on the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range, wherein the first photoelectric converter comprises a first electrode and a second electrode, a third electrode, and a first photoelectric conversion layer provided between the first electrode and the second electrode and the third electrode, wherein the second photoelectric converter comprises a first photoelectric conversion region, and the optical filter comprises a first color filter and a second color filter. A mobile body characterized in that the first color filter overlaps the first electrode and the first photoelectric conversion region, the second color filter overlaps the second electrode and the first photoelectric conversion region, the first color filter is configured to transmit light of a first predetermined color component, and the second color filter is configured to transmit light of a second predetermined color component different from the first predetermined color component. Claim 18 A light detection system comprising a light-emitting device and a photodetector, wherein the light-emitting device emits a first light in the visible light range and a second light in the infrared light range, and the photodetector includes a photoelectric conversion element, wherein the photoelectric conversion element comprises a semiconductor substrate, a first photoelectric converter provided on the semiconductor substrate and detecting and photoelectrically converting light of a first wavelength range including the first light, a second photoelectric converter provided within the semiconductor substrate at a position overlapping with the first photoelectric converter in the thickness direction of the semiconductor substrate and detecting and photoelectrically converting light of a second wavelength range including the second light, an optical filter provided on the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range, wherein the first photoelectric converter includes a first electrode and a second electrode, a third electrode, and a first photoelectric conversion layer provided between the first electrode and the second electrode and the third electrode, and the second photoelectric converter includes a first photoelectric conversion region, and the optical filter includes a first color filter and a second color filter An electronic device characterized by including, wherein the first color filter overlaps the first electrode and the first photoelectric conversion region, the second color filter overlaps the second electrode and the first photoelectric conversion region, the first color filter is configured to transmit light of a first predetermined color component, and the second color filter is configured to transmit light of a second predetermined color component different from the first predetermined color component.

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