Substrate Processing Apparatus and Method for Forming Thin Film

Abstract

The present invention relates to a thin film forming method and a substrate processing apparatus comprising: a mounting step of mounting a substrate having a through hole formed therein onto a susceptor; an adsorption step of injecting a source gas containing ruthenium (Ru) toward the substrate to adsorb a source material containing ruthenium onto the inside of the through hole, the upper part of the substrate, and the lower part of the substrate; and a deposition step of injecting a reactant gas containing oxygen (O2) toward the substrate to form a metal thin film, wherein the adsorption step and the deposition step are performed while the substrate is spaced apart from the susceptor body having the susceptor.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and a thin film formation method for performing a processing process on a substrate, such as a deposition process. Background Technology

[0002] Generally, in order to manufacture semiconductor devices, display devices, solar cells, etc., it is necessary to form a predetermined thin film layer, thin film circuit pattern, or optical pattern on a substrate. To this end, substrate processing processes are performed, such as a deposition process for depositing a thin film of a specific material on the substrate, a photolithography process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film from the selectively exposed portion to form a pattern. Such substrate processing processes can be carried out by a substrate processing device.

[0003] Recently, there has been active development of technology that realizes high integration, miniaturization, and thinning by forming a thin film not only on the top of the substrate but also on the bottom of the substrate, and connecting the thin film formed on the top of the substrate and the thin film formed on the bottom of the substrate through via holes.

[0004] However, since the substrate processing device according to the prior art performs a process of forming a thin film on the substrate while the lower part of the substrate is in contact with a susceptor, there is a problem in that it is difficult to form a thin film on the lower part of the substrate to realize high integration, miniaturization, and thinning. The problem to be solved

[0005] The present invention is devised to solve the problem described above and is intended to provide a substrate processing apparatus and a thin film formation method capable of forming thin films on the upper and lower surfaces of a substrate while the substrate is seated on a susceptor. means of solving the problem

[0006] In order to solve the problem described above, the present invention may include the following configuration.

[0007] A thin film forming method according to the present invention may include: a mounting step of mounting a substrate having a through hole formed therein onto a susceptor; an adsorption step of adsorbing a source material containing ruthenium (Ru) onto the inside of the through hole, the upper part of the substrate, and the lower part of the substrate by spraying a source gas containing ruthenium toward the substrate; and a deposition step of forming a metal thin film by spraying a reactant gas containing oxygen (O2) toward the substrate. The adsorption step and the deposition step may be performed while the substrate is spaced apart from the susceptor body having the susceptor.

[0008] A substrate processing apparatus according to the present invention may include a chamber; a susceptor disposed inside the chamber and supporting a substrate having a through hole formed therein; and a spraying unit that sprays a source gas containing ruthenium (Ru) and a reactant gas containing oxygen (O2) toward the substrate to form a metal thin film on the inside of the through hole, the upper surface of the substrate, and the lower surface of the substrate. The spraying unit may spray the source gas and the reactant gas sequentially or simultaneously while the substrate is spaced apart from the susceptor body having the susceptor. Effects of the invention

[0009] According to the present invention, the following effects can be achieved.

[0010] The present invention is implemented to form the thin film on the inside of the through hole, the bottom of the substrate, and the top of the substrate by utilizing through holes formed between the substrate and the susceptor body and in the substrate. Accordingly, the present invention can improve the ease of the processing process for forming a thin film connecting the top of the substrate and the bottom of the substrate, such as via holes. Furthermore, the present invention can contribute to realizing high integration, miniaturization, thinning, etc., of the substrate on which the processing process is performed. Brief explanation of the drawing

[0011] FIG. 1 is a schematic diagram of a substrate processing apparatus according to the present invention. FIGS. 2 and 3 are schematic side cross-sectional views of a spraying unit in a substrate processing apparatus according to the present invention. FIG. 4 is a schematic side cross-sectional view showing a substrate supported in a substrate processing apparatus according to the present invention. FIG. 5 is a schematic side cross-sectional view showing a thin film formed on a substrate through a substrate processing apparatus and a thin film formation method according to the present invention. FIG. 6 is a schematic flowchart of a thin film formation method according to the present invention. Specific details for implementing the invention

[0012] Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described in detail with reference to the attached drawings.

[0013] Referring to FIG. 1, the substrate processing device (1) according to the present invention performs a processing process on a substrate (200). The substrate (200) may be a silicon substrate, a glass substrate, a metal substrate, etc. The substrate processing device (1) according to the present invention may perform a deposition process, such as depositing a thin film on the substrate (200).

[0014] Referring to FIGS. 1 to 3, the substrate processing device (1) may include a chamber (2), a susceptor (3), and a spraying unit (4).

[0015] The chamber (2) provides a processing space (100). A processing process for the substrate (200) can be performed in the processing space (100). The processing space (100) can be placed inside the chamber (2). An exhaust port (not shown) for exhausting gas from the processing space (100) can be coupled to the chamber (2). The susceptor (3) and the injection unit (4) can be placed inside the chamber (2).

[0016] The above susceptor (3) supports the substrate (200). The above susceptor (3) may support a single substrate (200) or multiple substrates (200). When multiple substrates (200) are supported by the above susceptor (3), a processing process for multiple substrates (200) can be performed at once. The above susceptor (3) may be coupled to the above chamber (2). The above susceptor (3) may be placed inside the above chamber (2).

[0017] The injection unit (4) sprays gas toward the susceptor (3). The injection unit (4) may be connected to a gas storage unit (40). In this case, the injection unit (4) may spray gas supplied from the gas storage unit (40) toward the susceptor (3). The injection unit (4) may be placed inside the chamber (2). The injection unit (4) may be placed facing the susceptor (3). The injection unit (4) may be placed above the susceptor (3). The processing space (100) may be placed between the injection unit (4) and the susceptor (3). The injection unit (4) may be coupled to a lid (not shown). The lid may be coupled to the chamber (2) to cover the upper part of the chamber (2).

[0018] The above injection part (4) may include a first gas path (4a) and a second gas path (4b).

[0019] The first gas channel (4a) is intended for injecting the first gas. One end of the first gas channel (4a) may be connected to the gas storage unit (40) through a pipe, hose, gas block, etc. The other end of the first gas channel (4a) may be connected to the processing space (100). Accordingly, the first gas supplied from the gas storage unit (40) may flow along the first gas channel (4a) and then be injected into the processing space (100) through the first gas channel (4a). The first gas channel (4a) functions as a channel for the flow of the first gas and also functions as an injection port for injecting the first gas into the processing space (100).

[0020] The second gas channel (4b) is intended to inject the second gas. The second gas and the first gas may be different gases. For example, if the first gas is a source gas, the second gas may be a reactant gas. One end of the second gas channel (4b) may be connected to the gas storage unit (40) through a pipe, hose, gas block, etc. The other end of the second gas channel (4b) may be connected to the processing space (100). Accordingly, the second gas supplied from the gas storage unit (40) may flow along the second gas channel (4b) and then be injected into the processing space (100) through the second gas channel (4b). The second gas passage (4b) above functions as a passage for the second gas to flow, and also functions as a nozzle for injecting the second gas into the processing space (100).

[0021] The second gas channel (4b) and the first gas channel (4a) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the gas storage unit (40) to the second gas channel (4b) may be injected into the processing space (100) without passing through the first gas channel (4a). The first gas supplied from the gas storage unit (40) to the first gas channel (4a) may be injected into the processing space (100) without passing through the second gas channel (4b). The second gas channel (4b) and the first gas channel (4a) may inject gas toward different parts of the processing space (100).

[0022] As shown in FIG. 2, the injection unit (4) may include a first plate (41) and a second plate (42).

[0023] The first plate (41) is positioned above the second plate (42). The first plate (41) and the second plate (42) may be positioned spaced apart from each other. A plurality of first gas holes (411) may be formed in the first plate (41). Each of the first gas holes (411) may function as a passage for the first gas to flow. The first gas holes (411) may belong to the first gas flow path (4a). A plurality of second gas holes (412) may be formed in the first plate (41). Each of the second gas holes (412) may function as a passage for the second gas to flow. The second gas holes (412) may belong to the second gas flow path (4b). A plurality of protruding members (413) may be attached to the first plate (41). The protruding members (413) may protrude from the lower surface of the first plate (41) toward the second plate (42). Each of the first gas holes (411) may be formed by penetrating the first plate (41) and the protruding members (413).

[0024] A plurality of openings (421) may be formed in the second plate (42). The openings (421) may be formed by penetrating the second plate (42). The openings (421) may be positioned at locations corresponding to each of the protruding members (413). Accordingly, as shown in FIG. 2, the protruding members (413) may be formed with a length that is positioned to be inserted into each of the openings (421). Although not shown, the protruding members (413) may also be formed with a length that is positioned above each of the openings (421). The protruding members (413) may also be formed with a length that protrudes downward from the second plate (42). The second gas holes (412) may be positioned to spray gas toward the upper surface of the second plate (42).

[0025] The injection unit (4) can generate plasma using the second plate (42) and the first plate (41). In this case, a plasma power source, such as RF power, may be applied to the first plate (41), and the second plate (42) may be grounded. The first plate (41) may be grounded, and a plasma power source may be applied to the second plate (42).

[0026] As shown in FIG. 3, the second plate (42) may have a plurality of first openings (422) and a plurality of second openings (423) formed therein.

[0027] The first openings (422) may be formed by penetrating the second plate (42). The first openings (422) may be connected to each of the first gas holes (411). In this case, the protruding members (413) may be arranged to be in contact with the upper surface of the second plate (42). The first gas may be injected into the processing space (100) through the first gas holes (411) and the first openings (422). The first gas holes (411) and the first openings (422) may belong to the first gas passage (4a).

[0028] The second openings (423) may be formed by penetrating the second plate (42). The second openings (423) may be connected to a buffer space (43) disposed between the first plate (41) and the second plate (42). The second gas may be injected into the processing space (100) through the second gas holes (412), the buffer space (43), and the second openings (423). The second gas holes (412), the buffer space (43), and the second openings (423) may belong to the second gas path (4b).

[0029] Referring to FIGS. 1 to 5, the substrate processing device (1) according to the present invention can be implemented to form a thin film (300) on the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200) using a through hole (210) formed in the substrate (200). The through hole (210) can be formed by penetrating the substrate (200). A plurality of through holes (210) may be formed in the substrate (200). In this case, the through holes (210) may be arranged at positions spaced apart from each other. When the substrate processing device (1) according to the present invention is implemented to form the thin film (300) on the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200), the injection part (4) and the susceptor (3) can be implemented as follows.

[0030] The injection unit (4) can form the thin film (300) by injecting the source gas and the reactant gas toward the substrate (200) in which the through hole (210) is formed, on the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200). The thin film (300) can be implemented as a metal thin film formed using a metal. In this case, the injection unit (4) can form the metal thin film by injecting the source gas containing ruthenium (Ru) and the reactant gas containing oxygen (O2).

[0031] The above injection unit (4) can inject the source gas and the reactant gas while the substrate (200) is spaced apart from the susceptor body (31) of the susceptor (3). Accordingly, a portion of the source gas and a portion of the reactant gas can be supplied through the through hole (210) to the spaced-apart space (30) between the substrate (200) and the susceptor body (31) and deposited as a lower thin film (310) on the lower part (220) of the substrate (200). A portion of the source gas and a portion of the reactant gas can be supplied to the upper part (230) of the substrate (200) and deposited as an upper thin film (320) on the upper part (230) of the substrate (200). A portion of the source gas and a portion of the reactant gas may be supplied into the interior of the through hole (210) and deposited as a connecting thin film (330) inside the through hole (210). In this case, the connecting thin film (330) may be formed on the inner wall (240) of the substrate (200) facing the through hole (210). The connecting thin film (330), the lower thin film (310), and the upper thin film (320) may be implemented as the thin film (300). The connecting thin film (330) may be connected to each of the lower thin film (310) and the upper thin film (320).

[0032] The injection unit (4) may inject the source gas and the reactant gas sequentially or simultaneously. When the injection unit (4) injects the source gas and the reactant gas sequentially, the thin film (300) including the lower thin film (310), the upper thin film (320), and the connecting thin film (330) may be formed by an atomic layer deposition (ALD) method. When the injection unit (4) injects the source gas and the reactant gas simultaneously, the thin film (300) including the lower thin film (310), the upper thin film (320), and the connecting thin film (330) may be formed by a chemical vapor deposition (CVD) method.

[0033] The above susceptor (3) may include the above susceptor body (31). When the substrate (200) is spaced apart from the above susceptor body (31), the injection unit (4) may inject the source gas and the reactant gas toward the substrate (200). Accordingly, the substrate processing device (1) according to the present invention may form the thin film (300) on the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200) by utilizing the spaced-apart space (30) between the substrate (200) and the above susceptor body (31) and the through hole (210). Accordingly, the substrate processing device (1) according to the present invention can improve the ease of the processing process for forming a thin film (300) that connects the upper part (230) of the substrate (200) and the lower part (220) of the substrate (200), such as via holes, and thus can contribute to realizing high integration, miniaturization, thinning, etc. The susceptor body (31) is coupled to a support and can be supported in the chamber (2) through the support.

[0034] When the susceptor body (31) and the substrate (200) are separated by a distance (D1) of 1 mm or more and 10 mm or less, the injection unit (4) can inject the source gas and the reactant gas. When the substrate (200) is separated by a distance (D1) of less than 1 mm from the susceptor body (31), the gap space (30) between the substrate (200) and the susceptor body (31) is too narrow, making it difficult to form the lower thin film (310) on the lower part (220) of the substrate (200). If the substrate (200) is spaced apart from the susceptor body (31) by a distance (D1) of more than 10 mm, the spacing space (30) between the substrate (200) and the susceptor body (31) is too wide, so the deposition rate of the lower thin film (310) on the lower part (220) of the substrate (200) may decrease. In addition, due to the distance between the substrate (200) and the susceptor body (31), the overall size of the substrate processing device (1) according to the present invention may increase excessively. Taking this into consideration, the substrate processing device (1) according to the present invention may be implemented so that the processing process is performed when the substrate (200) is spaced apart from the susceptor body (31) by a distance of 1 mm or more and 10 mm or less. Accordingly, the substrate processing device (1) according to the present invention can not only increase the deposition rate of the lower thin film (310) through the gap space (30) between the substrate (200) and the susceptor body (31), but also prevent the overall size from increasing excessively. The distance (D1) at which the substrate (200) is separated from the susceptor body (31) is the distance at which the lower surface of the substrate (200) and the upper surface of the susceptor body (31) are separated from each other, and may represent the shortest straight distance.

[0035] The above susceptor (3) can separate the substrate (200) from the susceptor body (31) using magnetic force. The above susceptor (3) can also separate the substrate (200) from the susceptor body (31) using gas injection. The above susceptor (3) can also separate the substrate (200) from the susceptor body (31) using a mechanism. In this case, the above susceptor (3) may include a frame (32).

[0036] The frame (32) may be coupled to the susceptor body (31). The frame (32) may protrude upward from the susceptor body (31). The substrate (200) may be seated on the frame (32) so as to be spaced apart from the susceptor body (31). Accordingly, the substrate (200) may be spaced apart from the susceptor body (31) by being seated on the frame (32). The frame (32) and the susceptor body (31) may be formed integrally. The susceptor (3) may include a plurality of frames (32). In this case, the frames (32) may support different parts of the substrate (200) at positions spaced apart from each other. The above frame (32) can support the substrate (200) so that the substrate (200) is spaced apart from the susceptor body (31) by a distance of 1 mm or more and 10 mm or less.

[0037] When the substrate (200) is placed on the frame (32), the substrate (200) may be positioned such that the distance (D1) from the susceptor body (31) is longer than the distance (D2) from the upper surface (321) of the frame (32). In this case, the distance (D1) between the substrate (200) and the susceptor body (31) may be implemented to be longer than the distance (D2) between the substrate (200) and the upper surface (321) of the frame (32). Accordingly, the substrate processing device (1) according to the present invention can secure a sufficiently large spacing space (30) between the substrate (200) and the susceptor body (31), thereby not only increasing the deposition rate of the lower thin film (310) but also improving the film quality of the lower thin film (310).

[0038] The above frame (32) may include a support surface (322). The support surface (322) may support the substrate (200). The support surface (322) may support the substrate (200) by being in direct contact with the substrate (200). The support surface (322) may be positioned at a location where the distance from the susceptor body (31) is longer than the distance from the upper surface (321) of the frame (32). In this case, the distance from the susceptor body (31) to the support surface (322) may be implemented to be longer than the distance from the upper surface (321) of the frame (32). Accordingly, the support surface (322) can support the substrate (200) so that a sufficiently large gap (30) is secured between the substrate (200) and the susceptor body (31).

[0039] The above frame (32) may include a support groove (323). The support groove (323) may be implemented as a groove machined to a certain depth in a part of the upper surface (321) of the frame (32). Through the support groove (323), the support surface (322) may be formed on the frame (32). The substrate (200) may be inserted into the support groove (323) and supported on the support surface (322).

[0040] Hereinafter, an embodiment of the thin film formation method according to the present invention will be described in detail with reference to the attached drawings.

[0041] Referring to FIGS. 1 to 6, the thin film formation method according to the present invention forms the thin film (300) on a substrate (200) having the through hole (210) formed therein. The thin film formation method according to the present invention can be performed using the substrate processing device (1) according to the present invention described above. The thin film formation method according to the present invention may include a mounting step (S100), an adsorption step (S200), and a deposition step (S300).

[0042] The above mounting step (S100) is to mount the substrate (200) having the through hole (210) formed therein onto the susceptor (3). The above mounting step (S100) can be achieved by a transfer robot (not shown) for transporting the substrate (200) mounting the substrate (200) onto the susceptor (3).

[0043] The above adsorption step (S200) involves spraying a source gas toward the substrate (200) to adsorb a source substance containing the source gas onto the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200). The above adsorption step (S200) can be performed by the spraying unit (4) spraying the source gas toward the substrate (200). The above adsorption step (S200) may also involve spraying a source gas containing ruthenium to adsorb a source substance containing ruthenium onto the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200).

[0044] The deposition step (S300) involves depositing the thin film (300) by spraying a reactant gas toward the substrate (200). Through the deposition step (S300), the thin film (300) may be deposited on the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200). In this case, the thin film (300) may include a connecting thin film (330) formed inside the through hole (210), a lower thin film (310) formed on the lower part (220) of the substrate (200), and an upper thin film (320) formed on the upper part (230) of the substrate (200). The deposition step (S300) may be performed by the spraying unit (4) spraying a reactant gas toward the substrate (200). When the adsorption step (S200) involves spraying a source gas containing ruthenium, the deposition step (S300) may be performed by spraying a reactant gas containing oxygen. In this case, the thin film (300) may be formed as a metal thin film on the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200).

[0045] The above adsorption step (S200) and the above deposition step (S300) can be performed while the substrate (200) is spaced apart from the susceptor body (31). Accordingly, the thin film formation method according to the present invention can form the thin film (300) on the inside of the through hole (210), the lower part (220) of the substrate (200), and the upper part (230) of the substrate (200) by utilizing the spaced-apart space (30) between the substrate (200) and the susceptor body (31) and the through hole (210). Therefore, the thin film formation method according to the present invention can improve the ease of the processing step for forming the thin film (300) connecting the upper part (230) of the substrate (200) and the lower part (220) of the substrate (200), such as via holes, and thus contribute to realizing high integration, miniaturization, thinning, etc.

[0046] The above adsorption step (S200) and the above deposition step (S300) can be performed when the substrate (200) is spaced apart from the susceptor body (31) by a distance of 1 mm or more and 10 mm or less. Accordingly, the thin film formation method according to the present invention can increase the deposition rate of the lower thin film (310) through the spaced-apart space (30) between the substrate (200) and the susceptor body (31), and can improve the film quality of the lower thin film (310).

[0047] The adsorption step (S200) and the deposition step (S300) may be performed simultaneously. In this case, the thin film (300) may be formed by chemical vapor deposition. The adsorption step (S200) and the deposition step (S300) may also be performed sequentially. In this case, the thin film (300) may be formed by atomic layer deposition.

[0048] When the adsorption step (S200) and the deposition step (S300) are performed sequentially, the adsorption step (S200) can be performed by supplying a portion of the source gas into the interior of the through hole (210) to adsorb the source material inside the through hole (210), supplying a portion of the source gas through the through hole (210) to the spaced-apart space (30) between the lower part (220) of the substrate (200) and the susceptor body (31) to adsorb the source material on the lower part (220) of the substrate (200), and supplying a portion of the source gas to the upper part (230) of the substrate (200) to adsorb the source material on the upper part (230) of the substrate (200).

[0049] When the adsorption step (S200) and the deposition step (S300) are performed sequentially, the deposition step (S300) can be performed by supplying a portion of the reactant gas into the interior of the through hole (210) to deposit the connecting thin film (330) inside the through hole (210), supplying a portion of the reactant gas to the spaced space (30) through the through hole (210) to deposit the lower thin film (310) on the lower part (220) of the substrate (200), and supplying a portion of the reactant gas to the upper part (230) of the substrate (200) to deposit the upper thin film (320) on the upper part (230) of the substrate (200). The thin film formation method according to the present invention may form the thin film (300) by repeatedly performing the adsorption step (S200) and the deposition step (S300), in a sequence such that the deposition step (S300) is performed after the adsorption step (S200) is performed.

[0050] When the adsorption step (S200) and the deposition step (S300) are performed, the substrate (200) can be maintained in a state separated from the susceptor body (31) by magnetic force. When the adsorption step (S200) and the deposition step (S300) are performed, the substrate (200) can be maintained in a state separated from the susceptor body (31) by gas injection. When the adsorption step (S200) and the deposition step (S300) are performed, the substrate (200) can be maintained in a state separated from the susceptor body (31) by a supporting force using a mechanism.

[0051] Here, the mounting step (S100) can be performed by mounting the substrate (200) onto the frame (32). In this case, the substrate (200) can be mounted onto the frame (32) at a distance of 1 mm or more and 10 mm or less from the susceptor body (31). The mounting step (S100) can also be performed by mounting the substrate (200) onto the frame (32) such that the distance (D1) between the substrate (200) and the susceptor body (31) is longer than the distance (D2) between the substrate (200) and the upper surface (321) of the frame (32). In this case, the adsorption step (S200) and the deposition step (S300) can be performed when the substrate (200) is positioned such that the distance (D1) between the substrate (200) and the susceptor body (31) is longer than the distance (D2) between the substrate (200) and the upper surface (321) of the frame (32). Accordingly, the thin film formation method according to the present invention can secure a sufficiently large spacing space (30) between the substrate (200) and the susceptor body (31), thereby not only increasing the deposition rate of the lower thin film (310) but also improving the film quality of the lower thin film (310).

[0052] It will be obvious to those skilled in the art that the invention described above is not limited to the aforementioned embodiments and attached drawings, and that various substitutions, modifications, and changes are possible within the scope of the technical concept of the invention. Explanation of the symbols

[0053] 1 : Substrate processing device 2 : Chamber 3 : Susceptor 30 : Separation space 31: Susceptor body 32: Frame 321: Top surface of the frame 322: Support surface 323 : Support Home 4 : Spraying Part 4a : 1st gas flow path 4b : 2nd gas flow path 41: 1st plate 411: 1st gas hole 412 : Second gas hole 413 : Protruding member 42 : Second plate 421 : Opening 422 : 1st opening 423 : 2nd opening 43 : Buffer space 100 : Processing space 200 : Substrate 210 : Through hole 220: Lower part of the substrate 230: Upper part of the substrate 240 : Inner wall of the substrate 300 : Thin film 310: Lower thin film 320: Upper thin film 330 : Connecting thin film

Claims

Claim 1 A method for forming a thin film, comprising: a mounting step of mounting a substrate onto a susceptor; an adsorption step of spraying a source gas toward the substrate to adsorb a source substance onto the substrate; and a deposition step of spraying a reactant gas toward the substrate to form a thin film, wherein the adsorption step and the deposition step are performed with the substrate separated from the susceptor body having the susceptor, wherein the adsorption step supplies a portion of the source gas into the space between the lower part of the substrate and the susceptor body to adsorb the source substance onto the lower part of the substrate, and the deposition step supplies a portion of the reactant gas into the space to deposit the thin film onto the lower part of the substrate, and wherein the mounting step mounts the substrate onto a frame that is coupled to the susceptor body or protrudes upward from the susceptor body, and wherein the adsorption step and the deposition step are performed with the substrate positioned such that the distance from the susceptor body is longer than the distance from the upper surface of the frame. Claim 2 A thin film forming method according to claim 1, characterized in that the adsorption step or the deposition step is performed while the substrate is spaced apart from the susceptor body by a distance of 1 mm or more and 10 mm or less. Claim 3 delete Claim 4 delete Claim 5 A substrate processing device comprising: a chamber; a susceptor disposed inside the chamber and for supporting a substrate; and a spraying unit for spraying a source gas and a reactant gas toward the substrate to form a thin film on the substrate, wherein the spraying unit sprays the source gas and the reactant gas sequentially or simultaneously while the substrate is spaced apart from the susceptor body having the susceptor, wherein a portion of the source gas is supplied to a spaced-apart space between the lower part of the substrate and the susceptor body to adsorb a source material to the lower part of the substrate, and a portion of the reactant gas is supplied to the spaced-apart space to deposit a thin film on the lower part of the substrate, wherein the susceptor includes a frame coupled to the susceptor body or protruding upward from the susceptor body, wherein the substrate is seated on the frame so as to be spaced apart from the susceptor body, and wherein the substrate is seated on the frame such that the distance from the susceptor body is longer than the distance from the upper surface of the frame. Claim 6 delete Claim 7 A substrate processing apparatus according to claim 5, wherein the injection unit injects the source gas or the reactant gas while the substrate is spaced apart from the susceptor body by a distance of 1 mm or more and 10 mm or less. Claim 8 A substrate processing apparatus according to claim 5, wherein the susceptor comprises a frame coupled to the susceptor body or protruding upward from the susceptor body, the frame comprises a support surface that supports the substrate, and the support surface is positioned such that the distance from the susceptor body is longer than the distance from the upper surface of the frame. Claim 9 A thin film forming method according to claim 1, characterized in that the substrate is a substrate including a through hole penetrating the substrate. Claim 10 A thin film forming method according to claim 9, wherein the adsorption step supplies a portion of the source gas into the interior of the through hole to adsorb the source material into the interior of the through hole, and the deposition step supplies a portion of the reactant gas into the interior of the through hole to deposit a thin film into the interior of the through hole. Claim 11 A thin film forming method according to claim 1, characterized in that the source gas is a gas containing ruthenium and the reactant gas is a gas containing oxygen.

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