Ultra Fine Pattern Mark and Manufacturing Method Thereof

Abstract

An ultrafine pattern mask capable of dry cleaning and reducing damage to the ultrafine pattern mask due to temperature, and a method for manufacturing the same are disclosed. This is achieved by fabricating the ultrafine pattern mask using a non-magnetic material on a silicon wafer, thereby eliminating the need for a heat-sensitive magnetic material within the deposition apparatus to fix the mask. Furthermore, since the ultrafine pattern mask utilizes a non-magnetic material, dry cleaning is possible, and deformation and damage to the mask caused by heat or plasma can be reduced, enabling long-term use.

Description

Technology Field

[0001] The present invention relates to an ultrafine pattern mask and a method for manufacturing the same, and more specifically, to an ultrafine pattern mask applicable to high-resolution displays and a method for manufacturing the same. Background Technology

[0002] Recently, flat panel displays, such as Liquid Crystal Displays (LCDs), Plasma Display Panels (PDPs), and Organic Light Emitting Diodes (OLEDs), are widely used as display devices. These flat panel displays are manufactured by carrying out a series of processes, such as deposition processes, in which metal or organic thin films are deposited in a specific pattern on a glass substrate.

[0003] The deposition of metal or organic thin films can be carried out by vacuum thermal deposition. This method involves placing a substrate inside a vacuum chamber, aligning and bonding the substrate with a mask having a specific pattern, and then applying heat to an evaporation source containing an evaporating material to deposit the sublimated material onto the substrate.

[0004] Figure 1 is a drawing showing a conventional deposition apparatus.

[0005] Referring to FIG. 1, a conventional deposition apparatus includes a pattern mask (10), an electrostatic chuck (20), and a magnet plate (30). At this time, a substrate (1) is placed between the pattern mask (10) and the electrostatic chuck (20). That is, after the substrate (1) is attached to the electrostatic chuck (20), the pattern mask (10) moves toward the magnet plate (30) by the magnetic force of the magnet plate (30) placed on the upper part of the electrostatic chuck (20), thereby allowing the substrate (1) and the pattern mask (10) to come into close contact with each other.

[0006] In order to utilize the magnetic force of such a magnet plate (30), a conventional pattern mask (10) is used in which a pattern hole is formed in the magnetic material through which the deposition material passes. That is, since the conventional deposition device uses a magnetic material, a separate magnet plate (30) must be installed for this purpose.

[0007] However, the pattern mask (10) containing such magnetic material has the disadvantage of being sensitive to temperature because it uses magnetic material. That is, since magnetic material has the characteristic of rearranging or losing its magnetism depending on the temperature, it is difficult to use it in a deposition device. For example, inside the deposition device, the temperature of the source being deposited using a heating method or an E-Beam method increases, so the surface temperature of the pattern mask (10) may gradually increase. As the temperature increases, the pattern mask (10) is more likely to be deformed or damaged to the point where it is difficult to reuse.

[0008] In addition, there are difficulties in dry cleaning when using a pattern mask (10) containing magnetic material. For example, as the mask becomes ultra-fine, the holes between patterns become finer, and there are limitations in cleaning all deposited materials by wet cleaning. Although a change to dry cleaning is being sought to overcome the limitations of wet cleaning, there are difficulties in applying dry cleaning due to the sensitivity of magnetic material to chemical reactions. Prior art literature

[0009] Korean Patent Publication 10-2016-0082557 The problem to be solved

[0010] The technical problem that the present invention aims to solve is to reduce damage to the ultrafine pattern mask due to temperature by using an ultrafine pattern mask containing a non-magnetic material, and to provide an ultrafine pattern mask capable of dry cleaning and a method for manufacturing the same. means of solving the problem

[0011] To solve the above-mentioned problem, the ultrafine pattern mask of the present invention comprises a first pattern mask having a plurality of first holes formed therein, which are disposed on a mask frame and allow a deposition material supplied from a deposition source to pass through and be deposited on a substrate, and a second pattern mask disposed on the upper portion of the first pattern mask and having a second hole formed therein having the same size at the same position as the first hole, wherein the first pattern mask and the second pattern mask are disposed to be in contact with each other, and the second pattern mask is formed of a non-magnetic material.

[0012] The first pattern mask above can be formed from a silicon wafer.

[0013] The above non-magnetic material may include a non-magnetic metal or a non-magnetic insulating material.

[0014] The coefficient of thermal expansion of the second pattern mask may have a coefficient of thermal expansion in the range of 0.5 to 2 times the coefficient of thermal expansion of the first pattern mask.

[0015] The second pattern mask above can be formed of titanium or nickel.

[0016] The combined thickness of the first pattern mask and the second pattern mask can be formed to have a thickness in the range of 0.1 to 2 times the diameter of the first hole.

[0017] The first pattern mask may be positioned to face the deposition source, and the second pattern mask may be positioned to face the substrate.

[0018] To solve the above-mentioned problem, the method for manufacturing an ultrafine pattern mask according to the present invention comprises the steps of: depositing a non-magnetic material on a wafer; depositing a photoresist on the non-magnetic material to form a pattern hole; etching the back surface of the wafer to control the thickness of the wafer; etching the non-magnetic material through the pattern hole of the photoresist to form a first pattern mask having a first hole formed therein; and forming a second hole having the same size as the first hole on the wafer to form a second pattern mask.

[0019] After the step of forming the first pattern mask, the method may further include a step of removing the photoresist.

[0020] The above pattern hole, the above first hole, and the above second hole may all have the same size at the same location.

[0021] The coefficient of thermal expansion of the second pattern mask may have a coefficient of thermal expansion in the range of 0.5 to 2 times the coefficient of thermal expansion of the first pattern mask.

[0022] The combined thickness of the first pattern mask and the second pattern mask can be formed to have a thickness in the range of 0.1 to 2 times the diameter of the first hole.

[0023] The first pattern mask is positioned to face a deposition source that supplies deposition material, and the second pattern mask can be positioned to face a substrate to be deposited. Effects of the invention

[0024] According to the present invention described above, by fabricating an ultrafine pattern mask using a non-magnetic material on a silicon wafer, a heat-sensitive magnetic material is not required within the deposition apparatus to fix the mask.

[0025] In addition, dry cleaning is possible because the ultrafine pattern mask utilizes a non-magnetic material. Therefore, precise cleaning of fine deposits formed in ultrafine holes is possible.

[0026] Furthermore, by fabricating an ultrafine pattern mask using a non-magnetic material instead of a magnetic material whose properties change with high temperatures, deformation and damage to the mask can be reduced, enabling long-term use and thereby improving reproducibility.

[0027] The technical effects of the present invention are not limited to those mentioned above, and other unmentioned technical effects will be clearly understood by those skilled in the art from the description below. Brief explanation of the drawing

[0028] Figure 1 is a drawing showing a conventional deposition apparatus. FIG. 2 is a drawing showing the deposition apparatus of the present invention. Figure 3 is a drawing showing the ultrafine pattern mask of the present invention. Figure 4 is a flowchart illustrating a method for manufacturing an ultrafine pattern mask of the present invention. Figure 5 is a diagram illustrating a method for manufacturing an ultrafine pattern mask of the present invention. Figure 6 is a diagram showing the fixing method of the ultrafine pattern mask of the present invention. Specific details for implementing the invention

[0029] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the present invention. In describing the present invention, detailed descriptions of related prior art are omitted if it is determined that such detailed descriptions may obscure the essence of the present invention.

[0030] Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. In describing with reference to the accompanying drawings, identical or corresponding components are given the same reference numerals, and redundant descriptions thereof will be omitted.

[0032] FIG. 2 is a drawing showing the deposition apparatus of the present invention.

[0033] Referring to FIG. 2, the deposition apparatus according to the present invention includes a chamber body (100), a deposition source (200), an electrostatic chuck (300), and an ultrafine pattern mask (400).

[0034] The chamber body (100) creates an environment for performing a deposition process on a substrate (1) and provides a space for the generation and reaction of a deposited material deposited on the substrate (1). The chamber body (100) may have an overall rectangular shape to be suitable for a substrate (1) having a rectangular plate shape. However, in the present invention, the shape of the chamber body (100) may be changed depending on the type and shape of the substrate (1).

[0035] Here, a substrate (1) supplied to the chamber body (100) can be loaded onto a substrate support (110). For example, the substrate (1) can be lifted by a transport robot (not shown) to be introduced into or withdrawn from the chamber body (100), and can be placed on a substrate support (110) that supports both ends of the substrate (1) by the transport robot. Additionally, both ends of the substrate support (110) can be connected to a substrate moving part (120) that moves the substrate (1) in an upward or downward direction. For example, the substrate (1) can be moved by the substrate moving part (120) toward an electrostatic chuck (300) positioned on top of the substrate (1).

[0036] A deposition source (200) is positioned at the bottom of the chamber body (100) and can supply a deposition material in the direction of the substrate (1). For example, a deposition material may be contained inside the deposition source (200), and a heater (not shown) for heating the deposition material may be included. At this time, the deposition material is a material capable of sublimation or vaporization and may include one or more of inorganic materials, metals, and organic materials.

[0037] The electrostatic chuck (300) can be positioned on the upper part of the chamber body (100) so as to face the substrate (1). At this time, the electrostatic chuck (300) can cause the substrate (1) to adhere to the electrostatic chuck (300) by utilizing electrostatic force. That is, the electrostatic chuck (300) can not only prevent sagging of the substrate (1) but also allow the substrate (1) to adhere to the ultra-fine pattern mask (400). Additionally, the electrostatic chuck (300) can be connected to an electrostatic chuck moving part (130) that moves the electrostatic chuck (300) in an upward or downward direction. For example, when the substrate (1) moves to the electrostatic chuck (300) and adheres to the electrostatic chuck (300), the electrostatic chuck (300) can be moved by the electrostatic chuck moving part (130) toward the ultra-fine pattern mask (400) positioned below. That is, the electrostatic chuck (300) can be moved to the ultrafine pattern mask (400) with the substrate (1) bonded thereto.

[0038] An ultrafine pattern mask (400) can be placed between a substrate (1) and a deposition source (200). At this time, the ultrafine pattern mask (400) can be placed with the mask frame (140) and the edge combined. Additionally, a plurality of holes can be formed in the ultrafine pattern mask (400) to allow a deposition material supplied from the deposition source (200) to be deposited on the substrate (1).

[0039] Figure 3 is a drawing showing the ultrafine pattern mask of the present invention.

[0040] Referring to FIGS. 2 and FIGS. 3, the ultrafine pattern mask (400) according to the present invention may include a first pattern mask (410) and a second pattern mask (420).

[0041] The first pattern mask (410) may be placed on the mask frame (140). More specifically, the edges of the first pattern mask (410) may be placed on the mask frame (140). Additionally, a plurality of first holes (411) through which a deposition material passes may be formed in the first pattern mask (410). The plurality of first holes (411) may be spaced apart at equal intervals and formed with the same size. For example, the first pattern mask (410) may be formed as a wafer, and preferably as a silicon wafer.

[0042] The second pattern mask (420) can be placed on top of the first pattern mask (410). For example, the second pattern mask (420) can be deposited on the first pattern mask (410) to form an ultrafine pattern mask (400) together with the first pattern mask (410). That is, the ultrafine pattern mask (400) can have a two-layer structure formed by the first pattern mask (410) and the second pattern mask (420).

[0043] A plurality of second holes (421) that allow a deposited material to pass through may be formed in the second pattern mask (420). Here, the second holes (421) may be formed at the same location and with the same size as the first holes (411). For example, the second holes (421) may be formed by patterning the second pattern mask (420) deposited on the first pattern mask (410), and the first holes (411) may be formed by patterning using the second holes (421) formed in the second pattern mask (420).

[0044] Additionally, the second pattern mask (420) may be formed of a non-magnetic material. For example, the non-magnetic material may be formed of a non-magnetic metal or a non-magnetic insulating material.

[0045] For example, in conventional pattern masks, a pattern mask formed of a magnet plate and a magnetic material is used to adhere the substrate (1) to the pattern mask. However, since magnetic materials have the characteristic of rearranging or removing magnetism depending on the temperature, pattern masks containing magnetic materials cannot be used for a long period of time. In addition, as the pattern mask becomes ultra-fine, the holes formed in the pattern become finer, making it impossible to clean all deposited materials using a wet cleaning method. Therefore, to clean the pattern mask, a dry cleaning method must be used, but dry cleaning using plasma is difficult for pattern masks containing magnetic materials due to the sensitivity of the magnetic material to chemical reactions.

[0046] However, the ultrafine pattern mask (400) according to the present invention can overcome the disadvantages associated with temperature because the first pattern mask (410) is formed as a wafer and the second pattern mask (420) is formed as a non-magnetic material instead of a magnetic material. Furthermore, since dry cleaning is possible, it can be used for a long period of time. In addition, the overall thickness of the ultrafine pattern mask (400) can be reduced because thinner deposition is possible compared to a pattern mask formed of a magnetic material.

[0047] The second pattern mask (420) is formed from a non-magnetic material, and it is preferable to use a material with a small difference in the coefficient of thermal expansion (CTE) from the first pattern mask (410). For example, if the difference in the coefficient of thermal expansion between the first pattern mask (410) and the second pattern mask (420) is large, damage caused by cracks may occur in the thin ultrafine pattern mask (400) due to the process environment inside the chamber body (100) having a high temperature. That is, since the ultrafine pattern mask (400) according to the present invention has a structure of a non-magnetic material / wafer, it is preferable to use a second pattern mask (420) formed from a non-magnetic material with a small difference in the coefficient of thermal expansion from the first pattern mask (410) formed from a wafer in order to minimize thermal deformation of the mask due to heat.

[0048] Here, it is preferable to form the second pattern mask (420) to have a thermal expansion coefficient in the range of 0.5 to 2 times the thermal expansion coefficient of the first pattern mask (410). For example, the thermal expansion coefficient of the first pattern mask (410) may have a thermal expansion coefficient of 2 times or less compared to the thermal expansion coefficient of the second pattern mask (420), or the thermal expansion coefficient of the second pattern mask (420) may have a thermal expansion coefficient of 2 times or less compared to the thermal expansion coefficient of the first pattern mask (410).

[0049] For example, if the difference in the coefficient of thermal expansion between the first pattern mask (410) and the second pattern mask (420) exceeds 2 times, stress may occur in which the material with low thermal expansion expands, and eventually defects such as cracks may occur.

[0050] For example, the coefficients of thermal expansion of aluminum, titanium, nickel, and silicon are 23.8 × 10⁻⁶, respectively. -6 / ℃, 8.32×10 -6 / ℃, 6.2×10 -6 / ℃, 4.2×10 -6 It has / °C. For example, if the first pattern mask (410) is formed from a silicon wafer and the second pattern mask (420) is formed from aluminum, there is a difference of about four times in the coefficient of thermal expansion. That is, cracks may occur in the ultrafine pattern mask (400) due to the four-fold difference in the coefficient of thermal expansion. However, if the first pattern mask (410) is formed from a silicon wafer and the second pattern mask (420) is made of titanium or nickel, the difference in the coefficient of thermal expansion becomes two times or less, so cracks in the ultrafine pattern mask (400) caused by heat can be prevented. Preferably, it is most desirable to form the ultrafine pattern mask (400) using the first pattern mask (410) formed from a silicon wafer and the second pattern mask (420) formed from nickel.

[0051] In addition, it is preferable that the thickness (a) of the ultrafine pattern mask (400), which is the sum of the thicknesses of the first pattern mask (410) and the second pattern mask (420), be formed to have a thickness in the range of 0.1 to 2 times the diameter (b) of the first hole (411) or the second hole (421).

[0052] For example, due to the characteristics of the deposition device, the deposition material supplied from the deposition source (200) diffuses toward the substrate (1), and the deposition material diffuses at a predetermined angle and is deposited on the substrate (1). At this time, if the thickness (a) of the ultrafine pattern mask (400) exceeds twice the thickness of the second hole (421), a shadow effect may occur due to the increased thickness of the ultrafine pattern mask (400), and an area that is not deposited on the substrate (1) may occur. In addition, if the thickness (a) of the ultrafine pattern mask (400) is less than 0.1 times the thickness of the second hole (421), the ultrafine pattern mask (400) becomes too thin compared to the hole size, and due to the reduced rigidity, the ultrafine pattern mask (400) may sag downwards toward the mask frame (140).

[0053] The thickness of such ultrafine pattern mask (400) can be adjusted through back etching of the first pattern mask (410). Back etching of the first pattern mask (410) will be explained in the manufacturing method described later.

[0054] Figure 4 is a flowchart illustrating a method for manufacturing an ultrafine pattern mask of the present invention.

[0055] Figure 5 is a diagram illustrating a method for manufacturing an ultrafine pattern mask of the present invention.

[0056] Referring to FIGS. 4 and 5, the method for manufacturing an ultrafine pattern mask according to the present invention comprises the steps of: depositing a non-magnetic material (402) on a wafer (401) (S510); depositing a photoresist (403) on the non-magnetic material (402) to form a pattern hole (404) (S520); etching the back surface of the wafer (401) to adjust the thickness of the wafer (401) (S530); etching the non-magnetic material (402) through the pattern hole (404) of the photoresist (403) to form a first pattern mask (410) in which a first hole (411) is formed (S540); and forming a second hole (421) having the same size as the first hole (411) on the wafer (401) to form a second pattern mask (420) (S550).

[0057] First, referring to FIGS. 4 and FIG. 5(a), a non-magnetic material (402) is deposited on a wafer (401) (S510). For example, the wafer (401) may be a silicon wafer. Additionally, the non-magnetic material (402) deposited on the wafer (401) may be a non-magnetic metal or a non-magnetic insulating material. At this time, it is preferable to use a non-magnetic material (402) having a coefficient of thermal expansion in the range of 0.5 to 2 times the coefficient of thermal expansion of the silicon wafer (401). For example, when using a silicon wafer (401), it is preferable to use titanium or nickel, which is a non-magnetic material (402) having a coefficient of thermal expansion of 2 times or less compared to the coefficient of thermal expansion of the silicon wafer (401), and it is even more preferable to use nickel.

[0058] Referring to FIGS. 4 and FIGS. 5(b), when a non-magnetic material (402) is deposited on a wafer (401), a photoresist (403) is deposited on the non-magnetic material (402) for patterning. After the photoresist (403) is deposited, the photoresist (403) is ultrafinely patterned through a patterning process to form pattern holes (404). (S520)

[0059] Referring to FIGS. 4 and FIGS. 5(c), after forming a pattern hole (404) in the photoresist (403), the back surface of the wafer (401) is etched (S530). This is to control the overall thickness of the ultrafine pattern mask (400) by etching the wafer (401). That is, the thickness of the ultrafine pattern mask (400) can be controlled by etching the back surface of the wafer (401). At this time, it is preferable to etch the back surface of the wafer (401) so that the thickness of the ultrafine pattern mask (400) is in the range of 0.1 to 2 times the diameter of the pattern hole (404). Here, the diameter of the pattern hole (404) may have the same size as the thickness of the first hole (411) and the second hole (412) formed in the first pattern mask (410) and the second pattern mask (420).

[0060] Referring to FIGS. 4 and FIGS. 5(d), after etching the back surface of the wafer (401), hole etching is performed on a non-magnetic material (402) through the pattern holes (404) of the photoresist (403). At this time, a reactive ion etching (RIE) etching process may be used for the etching process. That is, by performing hole etching on the non-magnetic material (402), a first pattern mask (410) having a plurality of first holes (411) that allow the deposited material to pass through can be formed. (S540)

[0061] Referring to FIGS. 4 and FIGS. 5(e), when a plurality of first holes (411) are formed in a non-magnetic material (402), the photoresist (403) used to form the first holes (411) is removed. After removing the photoresist (403), hole etching can be performed on the wafer (401) through etching. A second pattern mask (420) having a plurality of second holes (421) formed through hole etching of the wafer (401) can be formed (S550). Accordingly, the ultrafine pattern mask (400) according to the present invention may have a two-layer structure of a first pattern mask (410) formed from a wafer (401) and a second pattern mask (420) formed from a non-magnetic material (402). Additionally, a plurality of first holes (411) and a plurality of second holes (421) through which a deposited material passes in the ultrafine pattern mask (400) may have the same location and the same size.

[0062] In the ultrafine pattern mask (400) according to the present invention manufactured by the above-described manufacturing method, it is preferable to arrange the first pattern mask (410) so that it faces the deposition source (200) and the second pattern mask (420) so that it faces the substrate (1). For example, as shown in FIG. 5(c), when etching the back surface of a wafer, the outer portion supported by the mask frame (140) may be etched thicker than the central portion where the mask is formed. Therefore, if the first pattern mask (410) is arranged in the direction of the substrate (1), a phenomenon may occur where the mask does not come into contact with the substrate (1) and lifts due to the outer portion being thicker than the central portion. Since this can cause process defects due to the shadowing phenomenon, it is preferable to arrange the second pattern mask (420) so that it faces the substrate (1) and the first pattern mask (410) so that it faces the deposition source (200).

[0063] Figure 6 is a diagram showing the fixing method of the ultrafine pattern mask of the present invention.

[0064] Referring to FIG. 6, the ultrafine pattern mask (400) according to the present invention can be fixed to the electrostatic chuck (300) together with the substrate (1) using the electrostatic force of the electrostatic chuck (300).

[0065] For example, a substrate (1) supplied to a chamber body (100) can be loaded onto a substrate support (110), and the substrate (1) loaded onto the substrate support (110) can be moved to an electrostatic chuck (300) by a substrate moving part (120). The substrate (1) moved to the electrostatic chuck (300) can be bonded to the electrostatic chuck (300) by the electrostatic force of the electrostatic chuck (300), and the electrostatic chuck (300) bonded with the substrate (1) can be moved to an ultra-fine pattern mask (400) by an electrostatic chuck moving part (130).

[0066] The ultrafine pattern mask (400) can be attached to the electrostatic chuck (300) by the electrostatic force of the moved electrostatic chuck (300). Accordingly, the substrate (1) placed between the electrostatic chuck (300) and the ultrafine pattern mask (400) can also be attached to the ultrafine pattern mask (400). That is, since the ultrafine pattern mask (400) is formed from a wafer (401) and a non-magnetic material, a magnet plate for using conventional magnetic force is not required, and the electrostatic chuck (300) alone can bond not only the substrate (1) but also the ultrafine pattern mask (400) to the electrostatic chuck (300).

[0068] As described above, the ultrafine pattern mask and the method for manufacturing the same according to the present invention produce an ultrafine pattern mask using a non-magnetic material (402) on a silicon wafer (401), thereby eliminating the need for a heat-sensitive magnetic material within the deposition apparatus to fix the mask. Furthermore, since the ultrafine pattern mask (400) uses a non-magnetic material, dry cleaning is possible. Therefore, precise cleaning of fine deposits deposited in ultrafine holes is possible. Moreover, by producing the ultrafine pattern mask (400) using a non-magnetic material instead of a magnetic material whose properties change with high temperatures, deformation and damage to the mask can be reduced, allowing for long-term use and thereby improving reproducibility.

[0069] Meanwhile, the embodiments of the present invention disclosed in this specification and drawings are merely specific examples provided to aid understanding and are not intended to limit the scope of the present invention. It is obvious to those skilled in the art that other variations based on the technical concept of the present invention are possible in addition to the embodiments disclosed herein. Explanation of the symbols

[0070] 100: Chamber body 110: Substrate support 120: Substrate moving part 130: Electrostatic chuck moving part 140 : Mask frame 200 : Deposition source 300 : Electrostatic chuck 400 : Ultra-fine pattern mask 410: 1st pattern mask 411: 1st hole 420: 2nd pattern mask 412: 2nd hole

Claims

Claim 1 An ultrafine pattern mask comprising: a first pattern mask formed of a silicon wafer and disposed on a mask frame, having a plurality of first holes formed therein to allow a deposition material supplied from a deposition source to pass through and be deposited on a substrate; and a second pattern mask disposed on the upper portion of the first pattern mask and having a second hole formed therein having the same size at the same position as the first hole, wherein the first pattern mask and the second pattern mask are disposed to be in contact with each other, the second pattern mask is formed of a non-magnetic material, and the coefficient of thermal expansion of the second pattern mask has a coefficient of thermal expansion in the range of 0.5 to 2 times the coefficient of thermal expansion of the first pattern mask. Claim 2 delete Claim 3 In claim 1, the non-magnetic material is an ultrafine pattern mask comprising a non-magnetic metal or a non-magnetic insulating material. Claim 4 delete Claim 5 In claim 1, the second pattern mask is an ultrafine pattern mask formed of titanium or nickel. Claim 6 An ultrafine pattern mask according to claim 1, wherein the combined thickness of the first pattern mask and the second pattern mask is formed to have a thickness in the range of 0.1 to 2 times the diameter of the first hole. Claim 7 An ultrafine pattern mask according to claim 1, wherein the first pattern mask is positioned to face the deposition source and the second pattern mask is positioned to face the substrate. Claim 8 A method for manufacturing an ultrafine pattern mask comprising: a step of depositing a non-magnetic material on a wafer; a step of depositing a photoresist on the non-magnetic material to form a pattern hole; a step of etching the back surface of the wafer to control the thickness of the wafer; a step of etching the non-magnetic material through the pattern hole of the photoresist to form a first pattern mask having a first hole formed therein; and a step of forming a second hole having the same size as the first hole on the wafer to form a second pattern mask, wherein the coefficient of thermal expansion of the second pattern mask has a coefficient of thermal expansion in the range of 0.5 to 2 times the coefficient of thermal expansion of the first pattern mask. Claim 9 A method for manufacturing an ultrafine pattern mask according to claim 8, further comprising the step of removing the photoresist after the step of forming the first pattern mask. Claim 10 A method for manufacturing an ultrafine pattern mask according to claim 8, wherein the pattern hole, the first hole, and the second hole all have the same size at the same location. Claim 11 delete Claim 12 A method for manufacturing an ultrafine pattern mask according to claim 8, wherein the combined thickness of the first pattern mask and the second pattern mask is formed to have a thickness in the range of 0.1 to 2 times the diameter of the first hole. Claim 13 A method for manufacturing an ultrafine pattern mask according to claim 8, wherein the first pattern mask is positioned to face a deposition source that supplies a deposition material, and the second pattern mask is positioned to face a substrate to be deposited.

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