Method for depositing a two-dimensional layer and CVD reactor

Abstract

The present invention relates to a method for depositing a two-dimensional layer on one or more substrates (4) in a CVD reactor (1), wherein a process gas is supplied into a gas distribution chamber (11, 21) of a gas inlet member (2) by a supply line (10, 20), the gas inlet member comprises a first gas distribution chamber (11) and one or more second gas distribution chambers (21) separated from the first gas distribution chamber, and the substrate (4) is provided to a process temperature (Tp) by a heating device (6). According to the present invention, to deposit heterostructures, in the first step, an inert gas or a diluent gas is supplied into a first gas distribution chamber (11), and a reactive gas containing elements of a first two-dimensional layer is supplied into a second gas distribution chamber (21), and the reactive gas is thermally decomposed in a process chamber (3), wherein the decomposition products form the first two-dimensional layer, and in the second step, a second layer is deposited on and / or next to the first layer, wherein a diluent gas is supplied into the second gas distribution chamber (21), and a reactive gas containing elements of a second two-dimensional layer is supplied into the first gas distribution chamber (11), and the reactive gas or gas mixture is decomposed in the process chamber (3), wherein the decomposition products form the second two-dimensional layer.

Description

Technology Field

[0001] The present invention relates to a method for depositing a two-dimensional layer on a substrate in a CVD reactor, wherein a process gas is supplied by a supply line into a gas distribution chamber of a gas inlet member, the gas inlet member includes gas discharge openings, the gas discharge openings lead into a process chamber, the process gas or the decomposition products of the process gas are provided to the surface of a substrate in the process chamber, and the substrate is provided to a process temperature by a heating device, thereby causing the process gas to chemically react in the process chamber so as to deposit a two-dimensional layer on the surface.

[0002] Furthermore, the present invention relates to an apparatus for depositing a two-dimensional layer on a substrate by means of a CVD reactor, wherein the CVD reactor comprises a gas inlet member having a supply line leading into a gas distribution chamber, a process chamber through which gas discharge openings of the gas distribution chambers pass, and a susceptor for receiving the substrate which is heatable by a heating device, wherein the supply line is connected to a gas mixing system, and within the gas mixing system, an inert gas from at least an inert gas source or a diluent gas from a diluent gas source is provided, and a reactive gas from one or more reactive gas sources is provided, wherein the reactive gas has the characteristic of chemically reacting so as to be provided into a heated process chamber to deposit a two-dimensional layer on the substrate.

[0003] Furthermore, the present invention relates to the use of a CVD reactor for depositing a two-dimensional layer on a substrate. Background Technology

[0004] DE 10 2013 111 791 A1 describes the deposition of two-dimensional layers using a CVD reactor in which the gas inlet member is a shower head. The deposition of graphene by a CVD reactor in which a shower head is used as the gas inlet member is known from WO 2017 / 029470 A1. CVD reactors are known from DE 10 2011 056 589 A1, DE 10 2010 016 471 A1 and DE 10 2004 007 984 A1, DE 10 2009 043 840 A1, DE 11 2004 001 026 T5, EP 1 255 876 ​​B1, DE 10 2005 055 468 A1, US 2006 / 0191637 A1, and DE 10 2011 002 145 A1.

[0005] WO 2014 / 066100 A1 describes a shower head having a gas discharge surface including two gas discharge zones.

[0006] US 2010 / 119727 describes a shower head comprising a plurality of gas distribution chambers arranged vertically. US 2009 / 00661083 A1 describes a method and apparatus for depositing two-dimensional layers on a substrate. In such an ALD method, two different starting materials are deposited sequentially as monolayers on the surface of a substrate so that a second monolayer reacts with a first monolayer in a self-luminous reaction. An ALD method is likewise known from US 2015 / 0170908 A1. The problem to be solved

[0007] The objective of the present invention is to provide a CVD reactor capable of depositing multiple different two-dimensional layers adjacent to each other, above and below, or side by side, and a method related thereto. means of solving the problem

[0008] The above problem is solved by the invention set forth in the claims, wherein the dependent claims not only present preferred improvements but also independent solutions to the problem.

[0009] A CVD reactor according to the present invention comprises two volumes separated from each other and each forming a gas distribution chamber. A first process gas may be supplied into the first gas distribution chamber. As the process gas, a gas mixture consisting of a plurality, for example, two reactive gases may be considered. Preferably, only a single reactive gas may be considered as the process gas. Such a first reactive gas may be used to deposit a first two-dimensional layer. A second gas distribution chamber is designed so that the second process gas may be supplied into it to deposit a second two-dimensional layer by the second process gas. The second process gas is different from the first process gas and may consist of one or a plurality of reactive gases. However, preferably, the second process gas may consist of only a single reactive gas. During the deposition of multilayer structures, different process gases, particularly a single reactive gas or a mixture of a plurality, particularly two reactive gases, are supplied sequentially into one gas distribution chamber and into the other gas distribution chamber. Preferably, process gas is always supplied into only one of the plurality of gas distribution chambers. Dilution gas is supplied into each of the other gas distribution chambers among the plurality of gas distribution chambers, and said dilution gas may be an inert gas, such as a noble gas like argon, or a reducing gas like hydrogen. In the method according to the present invention, the gas inlet member comprises two or more gas distribution chambers separated from each other, and said gas distribution chambers each receive different gases or gas mixtures by a supply line. However, the device may comprise more than two gas distribution chambers each capable of receiving gases by a supply line. The gases are simultaneously discharged from different gas discharge openings assigned to each of the gas distribution chambers.A CVD reactor according to the present invention may include gas distribution chambers arranged vertically from top to bottom, and each gas distribution chamber may extend across the entire gas discharge surface of a gas inlet member. The gas discharge surface may have a disc shape and uniformly distributed gas discharge openings. The gas discharge openings are connected to different gas distribution chambers, wherein each opening is connected to a single gas distribution chamber to allow fluid flow. Through the gas discharge openings, a process gas may be introduced into the process chamber of the CVD reactor, and in the process chamber, the process gas undergoes a chemical reaction to deposit a two-dimensional layer on the surface of a substrate, wherein the substrate may be a sapphire substrate, a silicon substrate, etc. Each gas distribution chamber is connected to the gas discharge surface to allow fluid flow by means of a plurality of gas discharge openings, wherein the gas discharge openings are arranged to be generally uniformly distributed across the gas discharge surface. According to a first variant of the present invention, an inert gas or a diluent gas is supplied into a first gas distribution chamber of the gas distribution chambers, and a reactive gas is supplied into a second gas distribution chamber of the gas distribution chambers, and the reactive gas is thermally decomposed in a process chamber or otherwise decomposed, particularly by an energy supply, wherein the decomposition products form a two-dimensional layer on a substrate. In a second alternative of the present invention, different reactive gases may be supplied into each of the gas distribution chambers. In the process chamber, the reactive gases may chemically react with each other and form a two-dimensional layer. In the first alternative, graphene or hexagonal boron nitride (HBN) is preferably deposited, and methane or borazine is used as the reactive gas. In a second alternative of the method, a gas of a transition metal, such as tungsten or molybdenum, may be supplied into one of the gas distribution chambers.Gases of Group 6, e.g. sulfur, selenium, or tellurium, may be supplied into the second gas distribution chamber. Transition metal chalcogenides may be considered as two-dimensional layers. In one preferred design example, the CVD reactor includes a gas discharge plate facing toward the process chamber, which is adjacent to a cooling chamber through which a cooling medium can flow from its rear side. A first gas distribution chamber may be located above the cooling chamber, and a first gas is supplied into the first gas distribution chamber. The gas distribution chamber is connected to the gas discharge surface of the gas discharge plate of the gas inlet member by tubes traversing the cooling chamber. Laterally, the first tubes alternate with the second tubes, wherein the first tubes connect the first gas distribution chamber to the gas discharge surface, and the second tubes traverse the first gas distribution chamber as well as the cooling chamber and connect the second gas distribution chamber positioned above the first gas distribution chamber to the gas discharge surface. However, the gas exhaust member may have design examples such as those described in DE 10 2013 101 534 A1, DE 10 2009 043 840 A1, or DE 10 2007 026 349 A1. Thus, the contents of such patent specifications are incorporated in their entirety into the disclosure of this application. The bottom of the process chamber is formed by a susceptor, and said susceptor may be heated by a heating device to a process temperature preferably above 1000 °C. According to another alternative example, for example, for the deposition of tungsten sulfide, a mixture of reactive gases may be supplied into one of the gas distribution chambers. said gas mixture may consist of tungsten hexacarbonyl W(CO)6 and di-tert-butyl sulfide S(C4H9)2.In one embodiment, a multilayer structure is deposited on a sapphire substrate, wherein the multilayer structure comprises one or more layers or a plurality of layers made of hexagonal boron nitride (HBN), for example, having a thickness of 5 nm. A single graphene layer or a plurality of graphene layers (multilayer graphene) may be deposited vertically on such a layer. Subsequently, an HBN layer, for example, having a thickness of 3 nm, may be deposited on the graphene layer. Brief explanation of the drawing

[0010] One embodiment of the present invention is described below by the attached drawings. FIG. 1 schematically shows a CVD reactor (1) including a related gas mixing system, and Figure 2 shows an enlarged view of Section II of Figure 1. Specific details for implementing the invention

[0011] The drawings show a CVD reactor (1) comprising a hermetic housing and a gas inlet member (2) located inside it. A process chamber (3) is located below the gas inlet member (2), and the bottom of the process chamber forms a susceptor (5), which may be made of graphite or coated graphite. The susceptor (5) may be heated from below by a heating device (6). A resistance heater, an infrared heater, or an inductive RF heater may be considered as the heating device. A gas exhaust member (7) extends around the susceptor (5), which has a circular horizontal cross-section, and a vacuum pump not shown in the drawings is connected to the gas exhaust member. The gas exhaust member (7) may surround the susceptor (5).

[0012] The upper surface of the susceptor (5) facing the process chamber (3) includes a support surface (15), and a substrate (4) is placed on the support surface, the substrate may be composed of sapphire, silicon, metal, etc.

[0013] The above gas inlet member (2) has the shape of a shower head. Inside the gas inlet member (2), a cooling chamber (8) is located between the gas discharge plate (9) and the intermediate plate (23). Above the cooling chamber (8), a gas distribution chamber (21) is located between the intermediate plate (23) and the intermediate plate (13). Another gas distribution chamber (11) is located between the intermediate plate (13) and the cover plate (16).

[0014] A supply line (20) passes through the gas distribution chamber (21), and gas can be supplied from outside the CVD reactor into the supply line. A supply line (10) passes through the gas distribution chamber (11), and gas can be supplied from outside the CVD reactor (1) into the supply line.

[0015] The gas distribution chamber (11) is connected to the process chamber (3) by a plurality of tubes (12) that are uniformly distributed across the gas discharge surface (25) of the gas discharge plate (9). The tubes (12) pass into the gas discharge opening (14), and the gas supplied into the gas distribution chamber (11) through the gas discharge opening can flow into the process chamber (3).

[0016] The gas distribution chamber (21) is connected to the gas discharge surface (25) by a plurality of tubes (22), so that, as a result, gas supplied into the gas distribution chamber (21) through gas discharge openings (24) assigned to the tubes (22) can be introduced into the process chamber.

[0017] A supply line (8') passes through the cooling chamber (8), and a coolant can be supplied into the cooling chamber (8) through the supply line. The coolant can be discharged from the cooling chamber (8) again through the discharge line (8'').

[0018] Reference numeral 19 indicates a high-temperature meter, and the surface temperature is determined in this manner by allowing the surface of the substrate (4) to be observed during growth by the high-temperature meter. The optical beam path (18) of the high-temperature meter (19) proceeds through a window (17) within the cover plate (16) which is transparent to the wavelength of the high-temperature meter (19), and through one of the tubes (12').

[0019] The gas mixing system includes a control device (29), which may be a control computer. Different mass flow regulators (30, 30'; 37, 37'; 41, 41') may be driven and controlled by the control device (29). Furthermore, the temperature of a temperature control bath may be set by the control device (29), within which a source (32, 32') of a liquid or solid starting material is located, and said sources are formed as bubblers (32, 32'). Reference numerals 31 and 31' indicate a concentration meter, and said concentration meter may determine the vapor concentration within the carrier gas flow. Drawing reference numerals 39 and 39' indicate an inert gas source or a diluted gas source, said inert gas source or diluted gas source supplies an inert gas or a diluted gas, for example, a noble gas or a reducing gas, such as hydrogen or a mixture of such gases. Drawing reference numerals 40 and 40' indicate sources of reactive gases, for example, methane or other hydrocarbons.

[0020] Drawing reference numerals 33 and 33' represent switching valves, through which steam carried by a carrier gas generated within the bubblers (32, 32') can pass through the CVD reactor (1) into a vent line (35) or be supplied into one of the supply lines (10, 20) through a run line (34, 34').

[0021] Reactive gases can be generated by the bubblers (32, 32'). To this end, an inert gas or diluted gas from the gas source (39, 39') is supplied into the bubbler (32, 32') through the mass flow regulator (30, 30'). The vapor concentration in the carrier gas flow downstream can be measured by the concentration meter (31, 31'). Before supplying the reactive gas into the gas inlet member (2), the reactive gas is guided into the vent line (35) until the gas flow is stabilized. To start the deposition of the two-dimensional layer, the switching switch (33, 33') is switched so that the resulting stabilized gas flow can be supplied into one of the gas distribution chambers (11, 21) through the run line (34, 34'). In this embodiment, two sources are illustrated, and reactive gas can be generated from powder or liquid by each of the sources. In embodiments not illustrated in the drawings, a plurality of sources of the above type may be provided.

[0022] If a reactive gas is not supplied into one of the gas distribution chambers (11, 21), an inert gas or a diluted gas may be supplied into the gas distribution chamber (11, 21) from the inert gas source or diluted gas source (39) through the valve (36, 36') and the mass flow regulator (37, 37').

[0023] However, alternatively, a starting material provided in gaseous form, such as methane or other hydrocarbons, may be taken from the gas source (40, 40') and supplied into the gas distribution chamber (11, 21) by a mass flow regulator (41, 41'). Borazine may be provided by the gas source only if provided above the boiling point. Otherwise, borazine may be supplied as gas or steam through a bubbler (32, 32').

[0024] To deposit multilayer structures, a reactive gas or a mixture of two reactive gases is alternately supplied into one of the gas distribution chambers (11, 21), and an inert gas or a diluent gas is supplied into the other of the gas distribution chambers (11, 21). In this manner, multilayer structures composed of HBN and graphene can be sequentially deposited, for example, by switching between a borazine flow and a methane flow. A single graphene layer or multiple graphene layers can be embedded between two HBN layers, particularly monolayers. Alternatively, however, lateral heterostructures may be deposited, in which different two-dimensional layers are deposited laterally side by side on the surface of the substrate or on the surface of an already deposited layer. The side-by-side layers can be connected to each other.

[0025] Alternatively, a first starting material may be supplied into the first gas distribution chamber among the gas distribution chambers (11, 21) and a second starting material may be supplied into the second gas distribution chamber among the gas distribution chambers (11, 21), or a process gas, which is a mixture of two reactive gases, may be supplied into one of the gas distribution chambers. For example, one of the reactive gases may be tungsten-hexacarbonyl, which can be supplied through a bubbler (32, 32'). The other reactive gas may be a sulfur-, tellurium-, or selenium compound. Accordingly, the starting materials may be supplied into different gas distribution chambers (11, 21) on the one hand, or into the same gas distribution chamber (11, 21).

[0026] The present invention relates to all pairs of materials mentioned in DE 10 2013 111 791 A1. To this end, the disclosures of such patent specification are incorporated in their entirety into the present application.

[0027] The embodiments described above are used to explain the inventions described in their entirety by this application, which each independently improve the prior art by at least the following combinations of features, wherein two, multiple, or all such combinations of features may be combined with one another:

[0028] A method characterized in that a gas inlet member (2) comprises two or more gas distribution chambers (11, 21) separated from each other, and each of the gas distribution chambers receives different gases or gas mixtures by a supply line (10, 20), and the different gases or gas mixtures are simultaneously discharged from different gas discharge openings (14, 24) assigned to each of the gas distribution chambers (11, 21).

[0029] A gas inlet member (2) comprises two or more gas distribution chambers (11, 21) separated from each other, wherein the gas distribution chambers each receive different gases or gas mixtures by a supply line (10, 20), and the different gases or gas mixtures are simultaneously discharged from different gas discharge openings (14, 24) assigned to one of the gas distribution chambers (11, 21).

[0030] A method or use characterized in that an inert gas or a diluent gas is supplied into a first gas distribution chamber (11) among gas distribution chambers (11, 21), a gas mixture of a reactive gas or a gas containing elements constituting a two-dimensional layer is supplied into a second gas distribution chamber (21) among gas distribution chambers (11, 21), and the reactive gas is decomposed in a process chamber (3), for example, by thermal decomposition, wherein the decomposition products form a two-dimensional layer, or different reactive gases are supplied into the gas distribution chambers (11, 21), and the reactive gases chemically react with each other in the process chamber (3) to form a two-dimensional layer.

[0031] A method or use characterized in that, in a first step, an inert gas or diluent gas is supplied into a process chamber through a first gas distribution chamber (11) and gas discharge openings (14) assigned to the first gas distribution chamber during deposition, and a gas mixture containing a first reactive gas or gases particularly including elements of a two-dimensional layer is supplied through a second gas distribution chamber (21) and gas discharge openings (24) assigned to the second gas distribution chamber during deposition, and in a second step, a second two-dimensional layer is deposited on a process chamber during deposition in which a second reactive gas different from the first reactive gas is supplied through the first gas distribution chamber (11) and gas discharge openings (14) assigned to the first gas distribution chamber during deposition, and an inert gas or diluent gas is supplied through the second gas distribution chamber (21) and gas discharge openings (24) assigned to the second gas distribution chamber during deposition, wherein, in particular, the two steps are repeated once or multiple times.

[0032] A method or use characterized in that different two-dimensional layers are deposited in successive steps, stacked one on top of the other, and the reactive gases used in this case are supplied alternately into different gas distribution chambers (11, 21).

[0033] A device characterized in that the gas inlet member (2) comprises two separate gas distribution chambers (11, 21) each having a supply line (10, 20), wherein each of the two supply lines (10, 20) can be optionally connected to a reactive gas source among an inert gas source, a diluted gas source, or a reactive gas source to allow fluid to flow.

[0034] A method, use, or apparatus characterized by a switching device (33, 33'; 36, 36'; 38, 38'), wherein a gas distribution chamber (11, 21) can be connected to one of an inert gas source or a diluted gas source (39, 39') or reactive gas sources (32, 32'; 40, 40') to allow fluid to flow, by the switching device.

[0035] A method, use, or apparatus characterized in that reactive gas sources (32, 32') can be connected to a vent line (35) that allows the reactive gases to pass through or bypass the process chamber (3) optionally or alternately, or to a run line (34, 34') that allows the reactive gases to be introduced into the process chamber (3).

[0036] A gas inlet member (2) is a shower head having a gas outlet surface (25), gas outlet openings (14, 24) are disposed within the gas outlet surface, and two gas distribution chambers (11, 21) separated from each other by an intermediate plate (13) are disposed within the shower head, and the gas distribution chambers are each connected by tubes (12, 12', 22) to allow fluid to flow through the gas outlet openings (14, 24) which are uniformly distributed across the gas outlet surface (25), and / or the material of the two-dimensional layer is graphene, HBN, or a transition metal-dichalcogenide, in particular MoS2, WS2, MoSe2, or WSe2, and / or the reactive gas or reactive gas mixture contains a carbon compound, e.g., methane, or a boron compound, e.g., borazine, and / or the first reactive gas is an element of a transition metal, in particular a molybdenum compound or A method, use, or apparatus characterized by being a tungsten compound, and the second reactive gas containing an element of Group VI, in particular a sulfur compound, such as di-tert-butyl sulfide, a selenium compound, or a tellurium compound, and / or the inert gas being a noble gas, such as argon, and the diluent gas being a reducing gas, such as hydrogen.

[0037] All disclosed features are important to the present invention (in themselves, but also in combination with one another). Accordingly, for the purpose of incorporating features of the priority documents into the claims of this application, the disclosures of the relevant / attached priority documents (copies of the preliminary application) are included in their entirety. In particular, to make a divisional application based on the dependent claims, the dependent claims characterize independent and progressive improvements of the prior art by their own features, without the features of the cited claims. The invention presented in each claim may additionally include one or more features provided by reference numerals and / or presented in the reference numeral list in the foregoing detailed description. Furthermore, the present invention relates to design forms in which the individual features mentioned in the foregoing detailed description are not implemented, provided that the features are clearly unnecessary for the individual use or can be replaced by other means that function technically identically. Explanation of the symbols

[0038] 1 CVD reactor 2. Absence of gas inflow 3 process chambers 4 substrates 5 susceptors 6 heating device 7. Absence of gas emission 8 cooling chambers 8' supply line 8'' discharge line 9 Gas exhaust plate 10 supply lines 11 Gas distribution chamber 12 tubes 12' tube 13 middle plate 14 Gas exhaust opening 15 support surface 16 cover plate 17 Windows 18 beam paths 19 Optical devices, thermometers 20 supply lines 21 Gas distribution chamber 23 middle plate 24 gas exhaust opening 25 Gas exhaust surface 29 Control Unit 30 Mass flow regulators 30' Mass Flow Regulator 31 Concentration meter 31' concentration meter 32 Bubbler 32' Bubbler 33 switching valve 33' changeover valve 34 Run Line 34' run line 35 vent lines 37 Mass flow regulator 37' Mass Flow Regulator 39 Inert gas source 39' Inert gas source 40 Reactive gas sources 40' Reactive Gas Source 41 Mass flow regulator 41' Mass flow regulator T P Process temperature

Claims

Claim 1 An apparatus for depositing a heterostructure having different first and second two-dimensional layers on a substrate (4), comprising a chemical vapor deposition (CVD) reactor (1) including a process chamber (3) and a gas inlet member (2), wherein the gas inlet member (2) comprises a first gas distribution chamber (11) and a second gas distribution chamber (21) separated from the first gas distribution chamber (11), wherein the first gas distribution chamber (11) and the second gas distribution chamber (21) are arranged vertically above and below each other, and respective gas discharge openings (14) fluidically connected to the first gas distribution chamber (11) and respective gas discharge openings (24) fluidly connected to the second gas distribution chamber (21) are uniformly arranged across the entire gas discharge surface (25) of the gas inlet member (2); and comprising at least a first bubbler (32) configured to deliver a first transition metal compound and a first reactive gas source configured to deliver a first reactive gas comprising a group VI element, wherein the first A transition metal compound can react with the first reactive gas to form a first two-dimensional layer of a first metal-dichalcogenide on a substrate; comprising at least a second bubbler (32') configured to deliver a second transition metal compound and a second reactive gas source configured to deliver a second reactive gas comprising a group VI element, wherein the second transition metal compound can react with the second reactive gas to form a second two-dimensional layer of a second metal-dichalcogenide on a substrate; and an inert gas source (39, 39') configured to deliver an inert gas;A device comprising: a first and second switching device configured to alternately connect the first bubbler (32) and the second bubbler (32') to a vent line (35) that allows the first transition metal compound or the second transition metal compound to bypass the process chamber (3), or to a first and second run line (34, 34') that allows the first transition metal compound and the second transition metal compound to be introduced into the first gas distribution chamber (11) or the second gas distribution chamber (21), respectively; and a control device (29) configured to control the switching valves (33, 33') of the first and second switching devices. Claim 2 In claim 1, the control device (29) is configured to perform: supplying the first transition metal compound to the first gas distribution chamber (11) in the first step while supplying the first reactive gas to the second gas distribution chamber (21), wherein the substrate (4) is heated to a process temperature to form a first two-dimensional coating of the first metal-dichalcogenide on the surface of the substrate (4); and in the second step, supplying an inert or diluting gas to the second gas distribution chamber (21) while supplying the second reactive gas to the first gas distribution chamber (11), wherein the substrate (4) is heated to a process temperature to form a second two-dimensional coating of the second metal-dichalcogenide on the surface of the substrate (4). Claim 3 A method for depositing a heterostructure having different first and second two-dimensional layers on a substrate (4) using the apparatus of claim 1, comprising: in a first step, supplying the first transition metal compound to the first gas distribution chamber (11) while supplying the first reactive gas to the second gas distribution chamber (21), wherein the substrate (4) is heated to a process temperature to form a first two-dimensional coating of a first metal-dichalcogenide on the surface of the substrate (4); and in a second step, supplying an inert or diluting gas to the second gas distribution chamber (21) while supplying the second reactive gas to the first gas distribution chamber (11), wherein the substrate (4) is heated to a process temperature to form a second two-dimensional coating of a second metal-dichalcogenide on the surface of the substrate (4). Claim 4 An apparatus for depositing a heterostructure having different first and second two-dimensional layers on a substrate (4), comprising a chemical vapor deposition (CVD) reactor (1) including a process chamber (3) and a gas inlet member (2), wherein the gas inlet member (2) includes a first gas distribution chamber (11) and a second gas distribution chamber (21) separated from the first gas distribution chamber (11), wherein the first gas distribution chamber (11) and the second gas distribution chamber (21) are arranged vertically above and below each other, and a gas discharge opening (14) fluidically connected to the first gas distribution chamber (11) and a gas discharge opening (24) fluidly connected to the second gas distribution chamber (21) are uniformly arranged across the entire gas discharge surface (25) of the gas inlet member (2); at least a first reactive gas source (40) configured to deliver a first reactive gas which is a hydrocarbon compound; and a second reactive gas source configured to deliver a second reactive gas which is borazine A device comprising: a reactive gas source (40'); an inert gas source (39, 39') configured to deliver an inert or diluted gas; and a control device (29) configured to control a valve (38, 38'). Claim 5 In claim 4, the control device (29) is configured to: supply an inert or diluted gas to the first gas distribution chamber (11) in the first step while supplying the first reactive gas to the second gas distribution chamber (21), wherein the substrate (4) is heated to a process temperature to form a first two-dimensional coating of graphene on the surface of the substrate (4) from the decomposition product of the first reactive gas; and in the second step, supply an inert or diluted gas to the second gas distribution chamber (21) while supplying the second reactive gas to the first gas distribution chamber (11), wherein the substrate (4) is heated to a process temperature to form a second two-dimensional coating of hBN on the surface of the substrate (4) from the decomposition product of the second reactive gas. Claim 6 A method for depositing a heterostructure having different first and second two-dimensional layers on a substrate (4) using the apparatus of claim 4, comprising: in a first step, supplying an inert or diluted gas to the first gas distribution chamber (11) while supplying the first reactive gas to the second gas distribution chamber (21), wherein the substrate (4) is heated to a process temperature to form a first two-dimensional coating of graphene on the surface of the substrate (4) from the decomposition product of the first reactive gas; and in a second step, supplying an inert or diluted gas to the second gas distribution chamber (21) while supplying the second reactive gas to the first gas distribution chamber (11), wherein the substrate (4) is heated to a process temperature to form a second two-dimensional coating of hBN on the surface of the substrate (4) from the decomposition product of the second reactive gas. Claim 7 An apparatus for depositing a heterostructure having different first and second two-dimensional layers on a substrate (4), comprising a chemical vapor deposition (CVD) reactor (1) including a process chamber (3) and a gas inlet member (2), wherein the gas inlet member (2) includes a first gas distribution chamber (11) and a second gas distribution chamber (21) separated from the first gas distribution chamber (11), wherein the first gas distribution chamber (11) and the second gas distribution chamber (21) are arranged vertically above and below each other, and respective gas discharge openings (14) fluidically connected to the first gas distribution chamber (11) and respective gas discharge openings (24) fluidly connected to the second gas distribution chamber (21) are uniformly arranged across the entire gas discharge surface (25) of the gas inlet member (2); at least a first reactive gas source (33, 40) configured to deliver a first reactive gas; and a second reactive gas source (33') configured to deliver a second reactive gas The apparatus comprises an inert gas source (39, 39') configured to deliver an inert or diluted gas; wherein the first reactive gas source (33, 40) and the second reactive gas source (33', 40') are configured to deliver reactive gases that form a metal-dichalcogenide, graphene, or hBN in a chemical reaction. Claim 8 In claim 7, the apparatus comprises a bubbler (32, 32') configured to deliver a transition metal compound, wherein at least one of the first reactive gas source (33, 40) and the second reactive gas source (33', 40') is configured to deliver a transition metal compound. Claim 9 In paragraph 8, the bubbler (32) is a device comprising a molybdenum compound or a tungsten compound. Claim 10 In claim 7, the apparatus comprises a first bubbler (32) configured to deliver a first transition metal compound and a second bubbler (32') configured to deliver a second transition metal compound, a first and second switching device configured to alternately connect the first or second transition metal compound to a vent line (35) that allows the first or second transition metal compound to bypass a process chamber (3), or to a first and second run line (34, 34') that allows the first and second transition metal compounds to be introduced into a first or second gas distribution chamber (11, 21), respectively, and a control device (29) configured to control the valves (38, 38') of the first and second switching devices. Claim 11 In claim 7, the apparatus is configured such that at least one of the first reactive gas source (33, 40) and the second reactive gas source (33', 40') is configured to deliver a hydrocarbon or borazine. Claim 12 In claim 1, the first bubbler (32) is a device comprising a molybdenum compound. Claim 13 In claim 1, the second bubbler (32') is a device comprising a tungsten compound. Claim 14 A device according to claim 1, wherein the first bubbler (32) comprises a molybdenum compound and the second bubbler (32') comprises a tungsten compound. Claim 15 delete

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