Semiconductor wafer deposition process method

Abstract

The present invention provides a semiconductor deposition process method comprising: a first step of loading a wafer onto a heater; a second step of raising the heater to a deposition process progress position to proceed with the deposition process; a third step of lowering the heater to the lower side of the ring housing; a fourth step of rotating the ring housing to open an edge ring; a fifth step of lowering the pin to support the wafer on the edge ring; a sixth step of rotating the edge ring in place at a predetermined angle to rotate the wafer supported on the edge ring at a predetermined angle; a seventh step of raising the pin to raise the wafer placed on the edge ring; an eighth step of rotating the ring housing to close the edge ring; and a ninth step of raising the heater to a deposition process progress position to proceed with the deposition process again.

Description

Technology Field

[0001] The present invention relates to a semiconductor wafer manufacturing apparatus, and more specifically, to a semiconductor wafer deposition process method improved to maximize the effective surface area of ​​a wafer by rotating the wafer according to the process results of the wafer while proceeding with the process. Background Technology

[0002] Thermal and plasma-enhanced chemical vapor deposition (CVD) is one of many processes used to deposit thin films of materials on semiconductor wafers.

[0003] To process a wafer using the above thermal CVD, a vacuum chamber is provided with a substrate support configured to accommodate the wafer.

[0004] And in the CVD chamber, the wafer is placed inside the chamber by a robot blade and removed from the chamber, and is supported by a wafer support while processing is in progress.

[0005] In addition, the precursor gas is delivered into the vacuum chamber through a gas manifold plate placed on the wafer, and the wafer is heated to a process temperature in the range of about 250°C to 650°C.

[0006] And the above precursor gas reacts on the heated wafer surface to deposit a thin layer thereon and forms volatile byproduct gases that are pumped through the chamber exhaust system.

[0007] In addition, in a thermal CVD process, a heater such as an electric resistance type heater is used to heat the wafer, and in a plasma-enhanced CVD (PECVD), at least one RF electrode is provided to energize the gas to form a plasma.

[0008] And heat is provided by plasma to activate precursors and form a thin film layer.

[0009] Furthermore, the primary objective of wafer processing is to obtain the largest possible effective surface area from each wafer, and as a result, to obtain the maximum number of chips.

[0010] This is to minimize edge exclusion on the wafer being processed so that the wafer surface, including the wafer edge, is wasted as little as possible.

[0011] And processing variables affecting the uniformity and thickness of the layer deposited on the wafer must be controlled to maximize the effective surface area for each processed wafer.

[0012] Therefore, a new wafer heating device capable of processing the effective surface area of ​​the wafer to the maximum by minimizing edge exclusion on the wafer, and complex temperature control technology for this heating device are required.

[0013] Meanwhile, Figure 1 is a diagram simulating a wafer that has undergone a deposition process in a conventional semiconductor wafer manufacturing apparatus. As seen in Figure 1, the deposition material is non-uniform and the map profile of the wafer is not good.

[0014] Accordingly, in the thick TEOS (Tetra Ethyl Ortho Silicate) deposition process, uniform wafer rotation is essential for a uniform deposition film thickness, and in the MOLD process, wafer rotation is important when depositing silicon nitride (SiN) and silicon oxide (SiO2), and in the Atomic Layer Deposition (ALD) process, high precision is required to deposit very thin films at the atomic level, and in single-type ALD equipment, precise wafer positioning and temperature control are essential.

[0015] Accordingly, the present invention described below is a semiconductor wafer manufacturing apparatus that rotates the wafer without controlling the temperature of the heating device or heater according to the process state of the wafer, thereby minimizing edge exclusion on the wafer and maximizing the effective surface area of ​​the wafer. Prior art literature

[0016] 1. Heating device for semiconductor manufacturing according to Published Patent No. 10-2008-0113588 (published December 31, 2008) 2. High-temperature metal heater block for semiconductor wafer and method for manufacturing the same according to Published Patent No. 10-2019-0135877 (published December 9, 2019) 3. Semiconductor heating device according to Published Patent No. 10-2021-0068766 (published June 10, 2021) The problem to be solved

[0017] The present invention was created to solve the above-mentioned problems, and aims to provide a semiconductor wafer deposition process method that maximizes the effective surface area of ​​a wafer by rotating only the wafer to proceed with the process without separately controlling the heater temperature according to the wafer process results. means of solving the problem

[0018] A semiconductor deposition process method of the present invention for achieving the above-mentioned purpose comprises: a heater installed vertically within a vacuum chamber to heat a loaded wafer to a predetermined temperature; a pin for loading and unloading the wafer within the vacuum chamber; an edge ring installed above the heater to load and rotate the wafer; and a ring housing installed outside the edge ring to rotate so that the edge ring opens and closes, thereby performing a semiconductor deposition process within the vacuum chamber.

[0019] A first step of loading the wafer onto a heater;

[0020] A second step of raising the heater to a deposition process progress position to proceed with the deposition process;

[0021] A third step of lowering the heater to the lower side of the ring housing;

[0022] A fourth step of opening the edge ring by rotating the above ring housing;

[0023] A fifth step of supporting the wafer on the edge ring as the pin descends;

[0024] Step 6, rotating the edge ring in place at a predetermined angle to rotate the wafer supported by the edge ring at a predetermined angle;

[0025] Step 7, raising the pin to raise the wafer placed on the edge ring;

[0026] Step 8, closing the edge ring by rotating the above ring housing; and

[0027] Step 9 involves raising the heater to a deposition process progress position to proceed with the deposition process again.

[0028] After the ninth deposition step, the wafer process status of the wafer processed is checked, and if the process status is good, the wafer is unloaded from the pin, and if the wafer process is not good, steps 4 through 9 can be repeated.

[0029] Additionally, the fourth step may include rotating the ring housing in one direction at a predetermined angle to open the edge ring, and the eighth step may include rotating the ring housing in the other direction at a predetermined angle to close the edge ring. Effects of the invention

[0030] According to an embodiment of the present invention, by rotating the wafer according to the process state of the wafer and proceeding with the process, the distribution of the deposited material can be optimized without separately controlling the temperature of the heater, edge exclusion on the wafer can be minimized, and the effective surface area of ​​the wafer can be maximized. Brief explanation of the drawing

[0031] FIG. 1 is a diagram simulating a wafer produced by a deposition process in a conventional semiconductor wafer manufacturing apparatus. FIG. 2 shows a semiconductor wafer manufacturing apparatus according to the present invention, and FIG. 3 is a perspective view of the main components shown in FIG. 2. FIG. 4 is a drawing showing the opening and closing operation state of the edge ring of FIG. 3. FIG. 5 is a schematic flowchart showing the sequential operation of a semiconductor wafer manufacturing apparatus according to the present invention. FIG. 6 is a diagram simulating a wafer deposited in a semiconductor wafer manufacturing apparatus according to the present invention. FIGS. 7 to 21 are operation cross-sectional views sequentially showing the operation of a semiconductor processing module with improved wafer thermal uniformity according to the present invention. Specific details for implementing the invention

[0032] Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the attached drawings.

[0033] FIG. 2 shows a semiconductor wafer manufacturing apparatus according to the present invention, and FIG. 3 shows a perspective view of the main components shown in FIG. 2.

[0034] In addition, Fig. 4 is a drawing showing the opening and closing operation state of the edge ring of Fig. 3.

[0035] Referring to FIGS. 2 to 4, the semiconductor wafer manufacturing apparatus (1) according to the present invention comprises a vacuum chamber (10), a heater (20) installed to be vertically movable within the vacuum chamber (10) to heat a loaded wafer (W) to a predetermined temperature, an edge ring (41) installed above the heater (20) to load and rotate the wafer (W), and a ring housing (40) installed outside the edge ring (41) to rotate so that the edge ring (41) opens and closes.

[0036] The semiconductor wafer manufacturing apparatus (1) according to the present invention is provided with a control unit (50) that controls the operation of the edge ring (41) and the ring housing (40) to rotate the wafer (W) when the process state of the wafer (W) is not good.

[0037] That is, the control unit (50) controls the rotation of the wafer (W) on the heater (20) when the wafer (W) reaches the processing result (result as in FIG. 1), thereby optimizing the distribution of the deposition material over the entire surface of the wafer (W) without controlling the temperature of the heater (20), that is, while maintaining the temperature of the heater (20) constant as before.

[0038] And the wafer (W) is loaded and unloaded onto the heater (20) and the edge ring (41) by means of a plurality of pins (32) installed to be vertically movable on the heater (20).

[0039] In addition, a support device (31) is installed at the lower part of the pin (32) to support and raise the pin (32).

[0040] And the ring housing (40) rotates clockwise (CW) and counterclockwise (CCW) by a predetermined angle (e.g., 90 degrees) as shown in FIG. 4, and when the ring housing (40) rotates clockwise (CW) by a predetermined angle, the edge ring (41) closes or retracts into the ring housing (40), and accordingly, the wafer (W) is unloaded from the edge ring (41).

[0041] On the other hand, when the ring housing (40) rotates a predetermined angle in a counterclockwise direction (CCW), the edge ring (41) is opened or protrudes from the ring housing (40), and a wafer (W) is loaded onto the edge ring (41).

[0042] Here, the meaning of the edge ring (41) being open is that, as shown in FIG. 4, the ring housing (40) is rotated in a counterclockwise direction (CCW) by a predetermined angle so that the edge ring (41) protrudes from the ring housing (40), and a wafer (W) can be placed on the protruding ring housing (40) (or wafer loading).

[0043] In addition, the meaning of the edge ring (41) being closed is that, likewise as in FIG. 4, the ring housing (40) rotates clockwise (CW) by a predetermined angle so that the edge ring (41) retracts into the ring housing (40), so that the wafer (W) cannot be placed on the ring housing (40) (or the wafer is unloaded).

[0044] In this way, the operation of protruding or retracting the edge ring (41) from the ring housing (40) while the ring housing (40) rotates at a predetermined angle is similar to the operating principle of, for example, the blade (not shown) of a camera aperture protruding or retracting as it opens or closes.

[0045] Accordingly, the protrusion of the edge ring (41) from the ring housing (40) is defined as the opening of the edge ring (41), and conversely, the retraction of the edge ring (41) into the ring housing (40) is defined as the closing of the edge ring (41).

[0046] However, the present invention is not limited to the structure of the edge ring (41) as described above, provided that the support member supporting the wafer (W) in the ring housing (40) protrudes and retracts so that the wafer (W) can be loaded and unloaded.

[0047] And the heater (20) is equipped with a heating coil inside to generate and transfer heat, and is installed inside the vacuum chamber (10) during wafer (W) manufacturing to transfer a constant amount of heat to the wafer (W).

[0048] Accordingly, the configuration of the heater (20) applied to the present invention is the same as that of the conventional one, except that it is operated to be raised and lowered by the control unit (50).

[0049] FIG. 5 shows a schematic flowchart illustrating the sequential operation of a semiconductor wafer manufacturing apparatus according to the present invention.

[0050] In addition, Fig. 6 is a diagram simulating a wafer that has undergone a deposition process in a semiconductor wafer manufacturing apparatus according to the present invention.

[0051] Referring to FIGS. 2 to 6, the wafer (W) process using the semiconductor wafer manufacturing apparatus according to the present invention configured as described above is as follows.

[0052] First, the pin (32) is raised to load the wafer (W) onto the upper part of the heater (20) inside the vacuum chamber (10). (Step 110)

[0053] Next, the heater (20) rises to receive and load the wafer (W) onto the upper part of the heater (20), and the heater (20) rises further to the deposition process progress position to proceed with the wafer (W) process (step 120).

[0054] Additionally, the heater (20) is lowered, and the pin (32) checks the wafer (W) process status. If the process status is good as shown in FIG. 6, the wafer (W) is unloaded (steps 130, 140).

[0055] On the other hand, in step 130 above, if the wafer (W) process state is not good as in FIG. 1, the ring housing (40) is rotated counterclockwise (CCW) by a predetermined angle (90 degrees) to open the edge ring (41), the pin (32) is lowered, and the wafer (W) is loaded onto the edge ring (41).

[0056] Then, the edge ring (41) loaded with the wafer (W) is rotated to rotate the wafer (W) to a desired position.

[0057] Next, when the wafer (W) is rotated to a desired position, the edge ring (41) is stopped, the pin (32) is raised to load the wafer (W) onto the pin (32), and the edge ring (41) is closed. (Step 150)

[0058] Then, proceed again from step 120 above.

[0059] In this way, the semiconductor wafer manufacturing apparatus (1) according to the present invention checks the process status of the wafer (W) and rotates the wafer (W) depending on whether it is good or not.

[0060] As such, the semiconductor wafer manufacturing apparatus according to the present invention has the advantage of being able to simplify the wafer (W) process by rotating only the wafer (W) and proceeding with the process, rather than separately controlling the temperature of the heater (20) according to whether the wafer process result is good or not as in the conventional method, and not having to separately control the temperature of the heater.

[0061] Therefore, as shown in FIG. 6, by using the semiconductor wafer manufacturing apparatus according to the present invention, it is possible to manufacture a wafer (W) in which the distribution of the deposited material can be optimized.

[0062] In addition, the present invention allows for wafer (W) processing with a very uniform deposition material and a very good map profile.

[0063] As described above, the present invention enables wafer processing that minimizes edge exclusion on the wafer (W) and obtains the widest possible effective surface area from the wafer (W).

[0064] Hereinafter, the semiconductor wafer deposition process method of FIG. 6 will be explained in more detail with reference to FIG. 2 and FIG. 7 to 21. The method for deposition on a semiconductor wafer with improved wafer thermal uniformity according to the present invention first undergoes a first step in which the pin (32) rises as shown in FIG. 2 to move the wafer (W) to the upper part of the heater (20) inside the vacuum chamber (10).

[0065] Next, in the state of FIG. 2, as shown in FIG. 7, the heater (20) rises to load a wafer (W) onto the upper part of the heater (20), and as shown in FIG. 8, the heater (20) rises to a position for proceeding with the deposition process and undergoes a second step of proceeding with the deposition process of the wafer (W).

[0066] That is, the heater (20) rises to separate the wafer (W) placed on the pin from the pin, and then the heater (20) rises to the deposition process position with the wafer placed on it, and then proceeds with the first deposition process.

[0067] When the first deposition process is completed, the heater (20) is lowered as shown in FIG. 9. Accordingly, as shown in FIG. 10, the wafer is placed on the pin, and the heater (20) undergoes a third step of being completely lowered to the lower side of the ring housing.

[0068] When the heater rises and falls in the first and third stages, the edge ring is in an open state within the ring housing, that is, in a recessed state, and does not protrude into the hollow of the ring housing towards the center, so the edge ring does not interfere with the rising and falling of the heater.

[0069] Next, as shown in FIG. 11, a fourth step is taken in which the ring housing (40) is rotated in one direction, in the drawing, counterclockwise (CCW), to open the edge ring (41). Then, as shown in FIG. 12, the edge ring (41) is opened.

[0070] Then, as shown in FIG. 13, the pin (32) is lowered, and as shown in FIG. 14, the pin (32) is lowered completely, and the wafer (W) is loaded onto the edge ring (41) in the fifth step.

[0071] After that, as shown in FIGS. 15 and 16, the edge ring (41) is rotated in place at a predetermined angle in a certain direction, for example, counterclockwise (CCW), and accordingly, the wafer (W) is also rotated in a certain direction, for example, counterclockwise, in a sixth step.

[0072] In this case, the edge ring (41) may rotate independently of the ring housing (40), or the edge ring (41) may rotate by the ring housing (40).

[0073] Next, as shown in FIGS. 17 and 18, the pin (32) is raised to load the wafer (W) on top of the pin (32), and as shown in FIGS. 19 and 20, the ring housing (40) is rotated in the other direction, for example clockwise (CW), to close the edge ring (41).

[0074] Step 9 involves raising the heater to the deposition process execution position to resume the deposition process.

[0075] In this case, the control unit checks the wafer process status of the wafer processed after the ninth deposition step, and if the process status is good, unloads the wafer from the pin as shown in FIG. 21, and if the wafer process is not good, repeats steps 4 through 9.

[0076] In other words, the control unit checks the wafer process status of the wafer loaded on the wafer loading member and the process proceeding, and if the process status is good, unloads the wafer from the wafer loading member, and if the wafer process is not good, rotates the ring housing so that the edge ring protrudes, loads the wafer onto the edge ring, rotates the edge ring to rotate the wafer to position it at a desired location, and causes the wafer loading member to load the wafer again and proceed with the process.

[0077] In this way, the semiconductor processing module with improved wafer thermal uniformity according to the present invention can optimize the distribution of the deposited material as shown in FIG. 21 by automatically controlling the rotation speed and direction of the wafer (W) while maintaining the temperature of the heater (20) at a constant level, that is, without controlling the temperature of the heater (20), by having the control unit (50) determine the processing state of the wafer (W) and control the loading, unloading, and rotation of the wafer (W).

[0078] According to the present invention, the edge ring (41) can rotate in place to rotate the wafer placed thereon. As a result, the heater (20) can be placed in a single position rather than in multiple positions.

[0079] In addition, multiple heaters are unnecessary to improve wafer uniformity, and a fork that grips one end of the wafer to move the wafer with the heater is unnecessary. When one end of the wafer is gripped, thermal uniformity is reduced, and it is practically difficult to achieve the reduced thermal uniformity. However, since the lower part of the wafer is supported by a pin and rotated in place, the processing uniformity is improved.

[0080] As described above, the present invention has been explained with reference to an embodiment illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent embodiments are possible therefrom.

[0081] Therefore, the true scope of protection of the present invention must be determined solely by the appended claims. Explanation of the symbols

[0082] 10. Vacuum Chamber 20. Heater 31. Support device 32. Pin 40. Ring housing 41. Edge ring 50. Control unit

Claims

Claim 1 A semiconductor deposition process is performed within a vacuum chamber by providing a heater installed to be vertically movable within the vacuum chamber and heating a loaded wafer to a predetermined temperature, a pin for loading and unloading the wafer within the vacuum chamber, an edge ring installed above the heater and rotating the wafer, and a ring housing installed outside the edge ring and rotating to open and close the edge ring, comprising: a first step of raising the pin on which the wafer is placed to position the wafer above the heater; a second step of performing the deposition process by raising the heater to a position for performing the deposition process while supporting the wafer placed on the pin on the upper surface of the heater; a third step of lowering the heater to the lower side of the ring housing while having the pin located above the ring housing support the wafer; a fourth step of opening the edge ring by rotating the ring housing; a fifth step of supporting the wafer on the edge ring while the pin descends; and rotating the edge ring in place at a predetermined angle to the edge A semiconductor deposition process method comprising: a sixth step of rotating a wafer supported by a ring at a predetermined angle; a seventh step of raising the pin to raise the wafer placed on the edge ring; an eighth step of rotating the ring housing to close the edge ring; and a ninth step of raising the heater to a deposition process progress position to resume the deposition process. Claim 2 A semiconductor deposition process method according to claim 1, characterized by checking the wafer process status of the wafer processed after the ninth deposition step, unloading the wafer from the pin if the process status is good, and repeating steps 4 through 9 if the wafer process is not good. Claim 3 A semiconductor deposition process method according to claim 1, wherein the fourth step comprises rotating the ring housing in one direction at a predetermined angle to open the edge ring, and the eighth step comprises rotating the ring housing in the other direction at a predetermined angle to close the edge ring.

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