Display Apparatus having a light-emitting device

Abstract

The present invention relates to a display device comprising a light-emitting element. The light-emitting element may be located on a display area of ​​a device substrate. An overcoat layer may be located between the device substrate and the light-emitting element. The overcoat layer may extend onto a bezel area of ​​the device substrate. A heating signal wiring may be located between the bezel area of ​​the device substrate and the overcoat layer. A heating pattern electrically connected to the heating signal wiring may be located on the overcoat layer of the bezel area. The surface of the heating pattern facing the device substrate may be in direct contact with the front adhesive layer covering the light-emitting element. Accordingly, damage to the light-emitting element caused by external moisture can be prevented in the display device.

Description

Technology Field

[0001] The present invention relates to a display device in which a light-emitting element is located on a display area of ​​a device substrate. Background Technology

[0002] Generally, a display device provides an image to a user. For example, the display device may include pixel regions. Each pixel region may display a specific color. For example, each pixel region may include a light-emitting element. The light-emitting element may emit light displaying a specific color. For example, the light-emitting element may include a first electrode, a light-emitting layer, and a second electrode stacked in sequence.

[0003] Each pixel area may include a pixel driving circuit electrically connected to the light-emitting element. The pixel driving circuit may supply a driving current corresponding to a data signal to the light-emitting element according to a gate signal. For example, the pixel driving circuit may include at least one thin-film transistor. A plurality of insulating films for independent control of each pixel area may be laminated on the device substrate.

[0004] The light-emitting layer may be susceptible to moisture. For example, in the display device, the second electrode may cover the end of the light-emitting layer. The light-emitting layer may be formed by a deposition process. For example, the light-emitting layer may include a tail portion in which the thickness gradually decreases. However, in the display device, the area occupied by the second electrode may increase due to the tail portion of the light-emitting layer. Accordingly, the non-light-emitting area in the display device may increase. That is, in the display device, the light-emitting area is relatively reduced, and the image quality may be degraded. The problem to be solved

[0005] The problem that the present invention aims to solve is to provide a display device capable of preventing damage to a light-emitting element caused by external moisture without increasing the bezel area.

[0006] The problems that the present invention aims to solve are not limited to those mentioned above. Problems not mentioned herein will be clearly understood by a person skilled in the art from the description below. means of solving the problem

[0007] A display device according to the technical concept of the present invention for achieving the above-mentioned problem includes a device substrate. The device substrate includes a display area and a bezel area. An overcoat layer is located on the display area and the bezel area of ​​the device substrate. A light-emitting element is located on the overcoat layer of the display area. A heating signal wiring is located between the bezel area and the overcoat layer of the device substrate. Heating patterns are located on the overcoat layer of the bezel area. Each heating pattern is electrically connected to the heating signal wiring. A front adhesive layer is located on the light-emitting element. The front adhesive layer extends onto the bezel area of ​​the device substrate. An encapsulation substrate is located on the front adhesive layer. The encapsulation substrate overlaps with the display area and the bezel area of ​​the device substrate. The surface of the heating pattern facing the device substrate is in contact with the front adhesive layer.

[0008] The heating signal wiring can be extended along the edge of the display area. Heating patterns can be positioned side by side along the heating signal wiring.

[0009] Each heating pattern can extend to the outside of the heating signal wiring.

[0010] Each heating pattern may include an area extending in the same direction as the heating signal wiring.

[0011] Each heating pattern can have a shape symmetrical with respect to the heating signal wiring.

[0012] The light-emitting element may include a first electrode, a light-emitting layer, and a second electrode stacked in sequence. The heating pattern may include the same material as the first electrode of the light-emitting element.

[0013] At least one moisture barrier trench may be formed in the overcoat layer of the bezel area. The sidewalls of the moisture barrier trench may be covered by a barrier pattern. The moisture barrier trench may extend parallel to the heating signal wiring.

[0014] The blocking pattern may contain the same material as the heating pattern.

[0015] A lower protective layer may be located between the device substrate and the overcoat layer. The lower protective layer may cover the heating signal wiring. A moisture barrier trench may expose a portion of the lower protective layer.

[0016] At least one moisture barrier hole may be located between the signal wiring and the moisture barrier trench. The moisture barrier hole may penetrate the overcoat layer. The heating pattern may extend into the interior of the moisture barrier hole.

[0017] A pixel driving circuit may be located on the display area of ​​the device substrate. The pixel driving circuit may be electrically connected to a light-emitting element. A pad portion may be located on the bezel area of ​​the device substrate. The pixel driving circuit may be electrically connected to the pad portion by at least one signal wiring. A heating pad may be located on the bezel area of ​​the device substrate, positioned parallel to the pad portion. A heating signal wiring may be electrically connected to the heating pad. Effects of the invention

[0018] A display device according to the technical concept of the present invention comprises a light-emitting element located on an overcoat layer of a display area, a heating pattern located on an overcoat layer of a bezel area, a heating signal wiring covered by the overcoat layer of the bezel area, a front adhesive layer located on the light-emitting element and the heating pattern, and an encapsulation substrate located on the front adhesive layer, wherein the heating pattern is electrically connected to the heating signal wiring and the front adhesive layer can come into direct contact with the heating pattern. Accordingly, in a display device according to the technical concept of the present invention, the penetration of external moisture through the overcoat layer and the light-emitting layer can be prevented without increasing the bezel area. Therefore, in a display device according to the technical concept of the present invention, damage to the light-emitting element caused by external moisture can be prevented without reducing the display area. Brief explanation of the drawing

[0019] FIG. 1 is a schematic diagram showing a display device according to an embodiment of the present invention. FIG. 2 is a diagram showing a circuit of a unit pixel area in a display device according to an embodiment of the present invention. Figure 3 is an enlarged view of the K region of Figure 1. Figure 4a is a drawing showing a cross-section cut along the line I-I' of Figure 1. Figure 4b is a drawing showing a cross-section cut along the line II-II' of Figure 3. FIGS. 5a to 9a and 5b to 9b are drawings sequentially illustrating a method for forming a display device according to an embodiment of the present invention. FIGS. 10 to 12 are drawings showing a display device according to another embodiment of the present invention. Specific details for implementing the invention

[0020] Detailed information regarding the above-mentioned objectives, technical configuration, and resulting effects of the present invention will be more clearly understood through the following detailed description with reference to the drawings illustrating embodiments of the present invention. Here, since the embodiments of the present invention are provided to ensure that the technical concept of the present invention is sufficiently conveyed to those skilled in the art, the present invention may be embodied in other forms so as not to be limited to the embodiments described below.

[0021] Additionally, parts indicated by the same reference number throughout the specification refer to the same components, and the length and thickness of layers or regions in the drawings may be exaggerated for convenience. Furthermore, where it is stated that a first component is "on" a second component, this includes not only the case where the first component is located on the upper side in direct contact with the second component, but also the case where a third component is located between the first component and the second component.

[0022] Here, the terms first, second, etc. are used to describe various components and to distinguish one component from another. However, within the scope of the technical concept of the present invention, the first component and the second component may be named arbitrarily for the convenience of those skilled in the art.

[0023] The terms used in the specification of the present invention are used merely to describe specific embodiments and are not intended to limit the invention. For example, a component expressed in the singular includes a plurality of components unless the context clearly implies only the singular. Furthermore, in the specification of the present invention, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0024] Additionally, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the specification of the present invention.

[0025] (Example)

[0026] FIG. 1 is a schematic diagram showing a display device according to an embodiment of the present invention. FIG. 2 is a diagram showing a circuit of a unit pixel area in a display device according to an embodiment of the present invention. FIG. 3 is an enlarged view of the K area of ​​FIG. 1. FIG. 4a is a diagram showing a cross-section cut along the line I-I' of FIG. 1. FIG. 4b is a diagram showing a cross-section cut along the line II-II' of FIG. 3.

[0027] Referring to FIGS. 1 to 3, 4a and 4b, a display device according to an embodiment of the present invention may include a device substrate (100). The device substrate (100) may include an insulating material. The device substrate (100) may include a transparent material. For example, the device substrate (100) may include glass or plastic.

[0028] The above-described device substrate (100) may include a display area (AA) and a bezel area (NA). A plurality of pixel areas (PA) may be located within the display area (AA) of the device substrate (100). The bezel area (NA) may provide various signals for the operation of each pixel area (PA). For example, at least one gate driver (GIP1, GIP2) for applying a gate signal to each pixel area (PA) and a pad portion (PAD) for transmitting a data signal to each pixel area (PA) may be located on the bezel area (NA) of the device substrate (100). The pad portion (PAD) may be electrically connected to the gate driver (GIP1, GIP2). For example, on the bezel area (NA) of the device substrate (100), data transmission lines (DLL) connecting the pad portion (PAD) and the display area (AA) and gate transmission lines (GLL) connecting the pad portion (PAD) and the gate driver (GIP1, GIP2) may be located.

[0029] Each pixel area (PA) can implement a specific color. For example, a light-emitting element (300) may be located within each pixel area (PA). The light-emitting element (300) may emit light that represents a specific color. For example, the light-emitting element (300) may include a first electrode (310), a light-emitting layer (320), and a second electrode (330) stacked in order on the element substrate (100).

[0030] The first electrode (310) may include a conductive material. The first electrode (310) may have a high transmittance. For example, the first electrode (310) may be a transparent electrode made of a transparent conductive material such as ITO and IZO.

[0031] The light-emitting layer (320) can generate light of brightness corresponding to the voltage difference between the first electrode (310) and the second electrode (330). For example, the light-emitting layer (320) may include an emission material layer (EML) containing a light-emitting material. The light-emitting material may include an organic material, an inorganic material, or a hybrid material. For example, a display device according to an embodiment of the present invention may be an organic light-emitting display device containing an organic light-emitting material.

[0032] The light-emitting layer (320) may have a multilayer structure. For example, the light-emitting layer (320) may further include at least one of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL). Accordingly, in a display device according to an embodiment of the present invention, the light-emitting efficiency of the light-emitting layer (320) may be improved.

[0033] The second electrode (330) may include a conductive material. The second electrode (330) may include a material different from the first electrode (310). The reflectance of the second electrode (330) may be higher than the reflectance of the first electrode (310). For example, the second electrode (330) may include a metal such as aluminum (Al) and silver (Ag). Accordingly, in a display device according to an embodiment of the present invention, light generated by the light-emitting layer (320) may be emitted to the outside through the first electrode (310) and the device substrate (100).

[0034] A pixel driving circuit (DC) electrically connected to the light-emitting element (300) may be located within each pixel area (PA). The operation of the light-emitting element (300) located within each pixel area (PA) may be controlled by the pixel driving circuit (DC) of the corresponding pixel area (PA). The pixel driving circuit (DC) of each pixel area (PA) may be electrically connected to one of the data lines (DL), one of the gate lines (GL), and one of the power supply voltage lines (PL). The data lines (DL) may be electrically connected to the data transmission lines (DLL). The gate lines (GL) may be electrically connected to the gate driver (GIP1, GIP2). The power supply voltage lines (PL) may be electrically connected to the power unit. For example, the pixel driving circuit (DC) of each pixel area (PA) can apply a driving current corresponding to the data signal to the light-emitting element (300) of the corresponding pixel area (PA) according to the gate signal. The driving current generated by the pixel driving circuit (DC) of each pixel area (PA) can be applied to the light-emitting element (300) of the corresponding pixel area (PA) for one frame. For example, the pixel driving circuit (DC) of each pixel area (PA) may include a first thin-film transistor (T1), a second thin-film transistor (T2), and a storage capacitor (Cst).

[0035] The first thin-film transistor (T1) may include a first semiconductor pattern (211), a first gate electrode (213), a first source electrode (215), and a first drain electrode (217). The second thin-film transistor (T2) may have the same structure as the first thin-film transistor (T1). For example, the second thin-film transistor (T2) may include a second semiconductor pattern (221), a second gate electrode (223), a second source electrode (225), and a second drain electrode (227).

[0036] The first semiconductor pattern (211) and the second semiconductor pattern (221) may include a semiconductor material. For example, the first semiconductor pattern (211) and the second semiconductor pattern (221) may include an oxide semiconductor such as IGZO. The second semiconductor pattern (221) may include the same material as the first semiconductor pattern (211). For example, the second semiconductor pattern (221) may be located on the same layer as the first semiconductor pattern (211). The second semiconductor pattern (221) may be formed simultaneously with the first semiconductor pattern (211).

[0037] The first semiconductor pattern (211) and the second semiconductor pattern (221) may each include a source region, a drain region, and a channel region. The channel region may be located between the source region and the drain region. The source region and the drain region may have a lower resistance than the channel region. For example, the source region and the drain region may include a conductive region of the oxide semiconductor. The channel region may be a non-conductive region of the oxide semiconductor.

[0038] The first gate electrode (213) and the second gate electrode (223) may include a conductive material. For example, the first gate electrode (213) and the second gate electrode (223) may include metals such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), and tungsten (W). The second gate electrode (223) may include the same material as the first gate electrode (213). For example, the second gate electrode (223) may be located on the same layer as the first gate electrode (213). The second gate electrode (223) may be formed simultaneously with the first gate electrode (213).

[0039] The first gate electrode (213) may be located on the first semiconductor pattern (211). For example, the first gate electrode (213) may overlap with the channel region of the first semiconductor pattern (211). The first gate electrode (213) may be insulated from the first semiconductor pattern (211). For example, the channel region of the first semiconductor pattern (211) may have an electrical conductivity corresponding to the voltage applied to the first gate electrode (213). The second gate electrode (223) may be located on the second semiconductor pattern (221). For example, the second gate electrode (223) may overlap with the channel region of the second semiconductor pattern (221). The second gate electrode (223) may be insulated from the second semiconductor pattern (221). For example, the channel region of the second semiconductor pattern (221) may have an electrical conductivity corresponding to the voltage applied to the second gate electrode (223).

[0040] The first source electrode (215), the first drain electrode (217), the second source electrode (225), and the second drain electrode (227) may include a conductive material. For example, the first source electrode (215), the first drain electrode (217), the second source electrode (225), and the second drain electrode (227) may include metals such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), and tungsten (W). The first drain electrode (217) may include the same material as the first source electrode (215). For example, the first drain electrode (217) may be located on the same layer as the first source electrode (215). The first drain electrode (217) may be formed simultaneously with the first source electrode (215). The second drain electrode (227) may include the same material as the second source electrode (225). For example, the second drain electrode (227) may be located on the same layer as the second source electrode (225). The second drain electrode (227) may be formed simultaneously with the second source electrode (225).

[0041] The first source electrode (215) and the first drain electrode (217) may comprise the same material as the first gate electrode (213). For example, the first source electrode (215) and the first drain electrode (217) may be located on the same layer as the first gate electrode (213). The first source electrode (215) and the first drain electrode (217) may be formed simultaneously with the first gate electrode (213). The first source electrode (215) and the first drain electrode (217) may be insulated from the first gate electrode (213). For example, the first source electrode (215) and the first drain electrode (217) may be spaced apart from the first gate electrode (213).

[0042] The second source electrode (225) and the second drain electrode (227) may comprise the same material as the second gate electrode (223). For example, the second source electrode (225) and the second drain electrode (227) may be located on the same layer as the second gate electrode (223). The second source electrode (225) and the second drain electrode (227) may be formed simultaneously with the second gate electrode (223). The second source electrode (225) and the second drain electrode (227) may be insulated from the second gate electrode (223). For example, the second source electrode (225) and the second drain electrode (227) may be spaced apart from the second gate electrode (223).

[0043] The first source electrode (215) may be electrically connected to the source region of the first semiconductor pattern (211). The first drain electrode (217) may be electrically connected to the drain region of the first semiconductor pattern (211). The second source electrode (225) may be electrically connected to the source region of the second semiconductor pattern (221). The second drain electrode (227) may be electrically connected to the drain region of the second semiconductor pattern (221). The second source electrode (225) and the second drain electrode (227) may include the same material as the first source electrode (215) and the first drain electrode (217). For example, the second source electrode (225) and the second drain electrode (227) may be located on the same layer as the first source electrode (215) and the first drain electrode (217). The second source electrode (225) and the second drain electrode (227) may be formed simultaneously with the first source electrode (215) and the first drain electrode (217). The first source electrode (215), the first drain electrode (217), the second source electrode (225), and the second drain electrode (227) may be spaced apart from each other.

[0044] The thin-film transistors (T1, T2) of each pixel area (PA) may be located between the device substrate (100) and the light-emitting element (300) of the corresponding pixel area (PA). For example, at least one insulating film (110, 120, 130, 140, 150) may be located on the device substrate (100). Accordingly, in a display device according to an embodiment of the present invention, unnecessary connection between the thin-film transistors (T1, T2) of each pixel area (PA) and the light-emitting element (300) may be prevented. For example, a device buffer film (110), a gate insulating film (120), a lower protective film (130), an overcoat layer (140), and a bank insulating film (150) may be stacked in order on the device substrate (100).

[0045] The device buffer film (110) may include an insulating material. For example, the device buffer film (110) may include an inorganic insulating material such as silicon oxide (SiO) and silicon nitride (SiN). The device buffer film (110) may have a multilayer structure. For example, the device buffer film (110) may have a stacked structure of a film made of silicon nitride (SiN) and a film made of silicon oxide (SiO).

[0046] The device buffer film (110) may be positioned between the device substrate (100) and the thin-film transistors (T1, T2) of each pixel area (PA). The device buffer film (110) may prevent contamination by the device substrate (100) during the formation process of the thin-film transistors (T1, T2). For example, the entire surface of the device substrate (100) facing the thin-film transistors (T1, T2) of each pixel area (PA) may be covered by the device buffer film (110). The thin-film transistors (T1, T2) of each pixel area (PA) may be positioned on the device buffer film (110).

[0047] The gate insulating film (120) may include an insulating material. For example, the gate insulating film (120) may include an inorganic insulating material such as silicon oxide (SiO) and silicon nitride (SiN). The gate insulating film (120) may include a material having a high dielectric constant. For example, the gate insulating film (120) may include a High-K material such as hafnium oxide (HfO). The gate insulating film (120) may have a multilayer structure.

[0048] The gate insulating film (120) may be located on the device buffer film (110). The gate insulating film (120) may extend between the semiconductor pattern (211, 221) and the gate electrode (213, 223) of each thin-film transistor (T1, T2). For example, the gate electrode (213, 223) of each thin-film transistor (T1, T2) may be insulated from the semiconductor pattern (211, 221) of the corresponding thin-film transistor (T1, T2) by the gate insulating film (120). The gate insulating film (120) may cover the first semiconductor pattern (211) and the second semiconductor pattern (221) of each pixel region (PA). The first gate electrode (213) and the second gate electrode (223) of each pixel region (PA) may be located on the gate insulating film (120).

[0049] The first source electrode (215), the first drain electrode (217), the second source electrode (225), and the second drain electrode (227) of each pixel area (PA) may be located on the gate insulating film (120). For example, the gate insulating film (120) of each pixel area (PA) may include a first source contact hole exposing the source area of ​​the first semiconductor pattern (211), a first drain contact hole exposing the drain area of ​​the first semiconductor pattern (211), a second source contact hole exposing the source area of ​​the second semiconductor pattern (221), and a second drain contact hole exposing the drain area of ​​the second semiconductor pattern (221).

[0050] The lower protective layer (130) may include an insulating material. For example, the lower protective layer (130) may include an inorganic insulating material such as silicon oxide (SiO) and silicon nitride (SiN).

[0051] The lower protective film (130) may be positioned on the gate insulating film (120). The lower protective film (130) may prevent damage to each thin-film transistor (T1, T2) due to external moisture and shock. For example, the first gate electrode (213), the first source electrode (215), the first drain electrode (217), the second gate electrode (223), the second source electrode (225), and the second drain electrode (227) of each pixel area (PA) may be covered by the lower protective film (130). The lower protective film (130) may extend along the surface of each thin-film transistor (T1, T2) facing the device substrate (100). The lower protective film (130) may contact the gate insulating film (120) on the outside of the thin-film transistors (T1, T2) located within each pixel area (PA).

[0052] The overcoat layer (140) may include an insulating material. The overcoat layer (140) may include a material different from the lower protective film (130). For example, the overcoat layer (140) may include an organic insulating material.

[0053] The overcoat layer (140) may be positioned on the lower protective film (130). The overcoat layer (140) may eliminate step differences caused by the thin-film transistors (T1, T2) of each pixel area (PA). For example, the upper surface of the overcoat layer (140) facing the device substrate (100) may be a flat surface. The first electrode (310), the light-emitting layer (320), and the second electrode (330) of each pixel area (PA) may be stacked sequentially on the upper surface of the overcoat layer (140). For example, the first electrode (310) of each pixel area (PA) may be electrically connected to the second thin-film transistor (T2) of the corresponding pixel area (PA) through one of the electrode contact holes penetrating the overcoat layer (140). Accordingly, in the display device according to the embodiment of the present invention, a characteristic deviation according to the generation position of light emitted to the outside through the element substrate (100) can be prevented.

[0054] The bank insulating film (150) may include an insulating material. For example, the bank insulating film (150) may include an organic insulating material. The bank insulating film (150) may include a material different from the overcoat layer (140).

[0055] The bank insulating film (150) may be positioned on the overcoat layer (140). The first electrode (310) of each light-emitting element (300) may be insulated from the first electrode (310) of an adjacent light-emitting element (300) by the bank insulating film (150). For example, the bank insulating film (150) may cover the edges of the first electrode (310) located within each pixel area (PA). Accordingly, in a display device according to an embodiment of the present invention, the light-emitting element (300) of each pixel area (PA) may be independently controlled by the bank insulating film (150). The light-emitting layer (320) and the second electrode (330) of each light-emitting element (300) may be laminated on a portion of the corresponding first electrode (310) exposed by the bank insulating film (150). For example, the bank insulating film (150) can define a light-emitting region within each pixel region (PA).

[0056] The light-emitting region of each pixel region (PA) defined by the bank insulating film (150) may not overlap with the pixel driving circuit (DC) of the corresponding pixel region (PA). For example, the thin-film transistors (T1, T2) of each pixel region (PA) may be located outside the light-emitting region of the corresponding pixel region (PA). Accordingly, in a display device according to an embodiment of the present invention, light emitted from the light-emitting element (300) of each pixel region (PA) may not be blocked by the thin-film transistors (T1, T2) of the corresponding pixel region (PA).

[0057] The light-emitting layer (320) of each light-emitting element (300) can be connected to the light-emitting layer (320) of an adjacent light-emitting element (300). For example, the light-emitting layer (320) of each light-emitting element (300) can be extended onto the bank insulating film (150). Light emitted from the light-emitting element (300) of each pixel area (PA) can have the same color as the light emitted from the light-emitting element (300) of an adjacent pixel area (PA). For example, the light-emitting layer (320) of each pixel area (PA) can generate white light.

[0058] Each pixel area (PA) can implement a different color from adjacent pixel areas (PA). For example, each pixel area (PA) may include a color filter (400) that overlaps with the light-emitting area (EA) of the corresponding pixel area (PA). The color filter (400) can implement a specific color using the light passing through it. For example, the color filter (400) of each pixel area (PA) may be located in the path of light emitted from the light-emitting element (300) located within the corresponding pixel area (PA). The color filter (400) of each pixel area (PA) may be located between the element substrate (100) and the light-emitting element (300) of the corresponding pixel area (PA). For example, the color filter (400) of each pixel area (PA) may be located between the lower protective film (130) and the overcoat layer (140). The step difference caused by the color filter (400) of each pixel area (PA) can be removed by the overcoat layer (140).

[0059] The voltage applied to the second electrode (330) of each light-emitting element (300) may be the same as the voltage applied to the second electrode (330) of an adjacent light-emitting element (300). For example, the second electrode (330) of each light-emitting element (300) may be electrically connected to the second electrode (330) of an adjacent light-emitting element (300). The second electrode (330) of each light-emitting element (300) may include the same material as the second electrode (330) of an adjacent light-emitting element (300). For example, the second electrode (330) of each light-emitting element (300) may be formed simultaneously with the second electrode (330) of an adjacent light-emitting element (300). Accordingly, in a display device according to an embodiment of the present invention, the process of forming the second electrode (330) of each light-emitting element (300) may be simplified.

[0060] A light-blocking pattern (231) may be located between the device substrate (100) and each thin-film transistor (T1, T2). For example, the light-blocking pattern (231) may be located between the device substrate (100) and the device buffer film (110). The light-blocking pattern (231) may include a material capable of absorbing or reflecting light. The light-blocking pattern (231) may include a conductive material. For example, the light-blocking pattern (231) may include a metal such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), and tungsten (W).

[0061] External light traveling in the direction of the semiconductor pattern (221) of each thin-film transistor (T1, T2) can be blocked by the light-blocking pattern (231). For example, the light-blocking pattern (231) may include a region that overlaps with the channel region of each semiconductor pattern (221). Accordingly, in the display device according to the embodiment of the present invention, changes in the characteristics of each thin-film transistor (T1, T2) caused by external light can be prevented.

[0062] The first thin-film transistor (T1) of each pixel driving circuit (DC) can transmit the data signal to the second thin-film transistor (T2) of the corresponding pixel driving circuit (DC) according to the gate signal. For example, the first gate electrode (213) of each pixel driving circuit (DC) can be electrically connected to one of the gate lines (GL), and the first source electrode (215) of each pixel driving circuit (DC) can be electrically connected to one of the data lines (DL). The second thin-film transistor (T2) of each pixel driving circuit (DC) can generate a driving current according to the data signal. For example, the second gate electrode (223) of each pixel driving circuit (DC) can be electrically connected to the first drain electrode (217) of the corresponding pixel driving circuit (DC), and the second source electrode (225) of each pixel driving circuit (DC) can be electrically connected to one of the power supply voltage lines (PL). A driving current generated by the second thin-film transistor (T2) located within the corresponding pixel area (PA) can be supplied to the light-emitting element (300) of each pixel area (PA). For example, the first electrode (310) of each pixel area (PA) can be electrically connected to the second drain electrode (227) of the corresponding pixel area (PA).

[0063] The gate lines (GL) may be located on the same layer as the gate electrodes (213, 223) of each thin-film transistor (T1, T2). For example, the gate lines (GL) may be located between the gate insulating film (120) and the lower protective film (130). The gate lines (GL) may contain the same material as the gate electrodes (213, 223) of each thin-film transistor (T1, T2). For example, the gate lines (GL) may be formed simultaneously with the gate electrodes (213, 223) of each thin-film transistor (T1, T2). The first gate electrode (213) of each pixel area (PA) may be in direct contact with the corresponding gate line (GL).

[0064] The data lines (DL) may intersect the gate lines (GL). The data lines (DL) may be located on a different layer from the gate lines (GL). For example, the data lines (DL) may be located between the device substrate (100) and the device buffer film (110). The data lines (DL) may include the same material as the light-blocking pattern (231). For example, the data lines (DL) may be formed simultaneously with the light-blocking pattern (231). The device buffer film (110) and the gate insulating film (120) may include data contact holes that expose a portion of each data line (DL). The first source electrode (215) of each pixel area (PA) may be connected to the corresponding data line (DL) through one of the data contact holes.

[0065] The power supply lines (PL) may extend parallel to the data lines (DL). For example, the power supply lines (PL) may intersect the gate lines (GL). The power supply lines (PL) may be located on the same layer as the data lines (DL). For example, the power supply lines (PL) may be located between the device substrate (100) and the device buffer film (110). The power supply lines (PL) may contain the same material as the data lines (DL). For example, the power supply lines (PL) may be formed simultaneously with the data lines (DL). The device buffer film (110) and the gate insulating film (120) may include power supply contact holes that expose a portion of each power supply line (PL). The second source electrode (225) of each pixel area (PA) can be connected to the corresponding power supply line (PL) through one of the power supply voltage contact holes.

[0066] The storage capacitor (Cst) of each pixel driving circuit (DC) can maintain a signal applied to the second gate electrode (223) of the corresponding pixel driving circuit (DC) for one frame. For example, the storage capacitor (Cst) of each pixel driving circuit (DC) can be electrically connected between the second gate electrode (223) and the second drain electrode (227) of the corresponding pixel driving circuit (DC). The storage capacitor (Cst) of each pixel driving circuit (DC) may include a capacitor electrode (232) stacked on a portion of the light-blocking pattern (231). For example, the light-blocking pattern (231) of each pixel area (PA) can function as one electrode of the storage capacitor (Cst) of the corresponding pixel driving circuit (DC). The capacitor electrode (232) of each pixel driving circuit (DC) can be insulated from the corresponding light-blocking pattern (231). The storage capacitor (Cst) of each pixel driving circuit (DC) can be formed using a conductive layer located between the device substrate (100) and the overcoat layer (140). For example, the capacitor electrode (232) of each pixel driving circuit (DC) can be located between the device buffer film (110) and the gate insulating film (120).

[0067] The light-blocking pattern (231) of each pixel area (PA) may be electrically connected to the second drain electrode (227) of the corresponding pixel driving circuit (DC). For example, the device buffer film (110) may include storage contact holes located between the light-blocking pattern (231) and the drain area of ​​the second semiconductor pattern (221) within each pixel area (PA). The drain area of ​​the second semiconductor pattern (221) located within each pixel area (PA) may be connected to the light-blocking pattern (231) located within the corresponding pixel area (PA) through one of the storage contact holes.

[0068] The capacitor electrode (232) of each pixel driving circuit (DC) may include the same material as the semiconductor patterns (211, 21) of the corresponding pixel driving circuit (DC). For example, the capacitor electrode (232) of each pixel driving circuit (DC) may include an oxide semiconductor such as IGZO. The capacitor electrode (232) of each pixel driving circuit (DC) may be formed simultaneously with the semiconductor patterns (211, 221) of the corresponding pixel driving circuit (DC). The capacitor electrode (232) of each pixel driving circuit (DC) may have a lower resistance than the channel region of each semiconductor pattern (211, 221) located within the corresponding pixel driving circuit (DC). For example, the capacitor electrode (232) of each pixel driving circuit (DC) may include a conductive region of the oxide semiconductor.

[0069] The data lines (DL), gate lines (GL), and power supply lines (PL) electrically connected to the pixel driving circuit (DC) of each pixel area (PA) may extend onto the bezel area (BZ) of the device substrate (100). At least one insulating film (110, 120, 130, 140, 150) for insulating between the data lines (DL), the gate lines (GL), and the power supply lines (PL) may be located on the bezel area (BZ) of the device substrate (100). For example, the device buffer film (110), the gate insulating film (120), the lower protective film (130), the overcoat layer (140), and the bank insulating film (150) may extend onto the bezel area (BZ) of the device substrate (100). The above device buffer film (110), the gate insulating film (120), the lower protective film (130), the overcoat layer (140), and the bank insulating film (150) can be stacked in order on the bezel region (BZ) of the device substrate (100).

[0070] A heating signal wiring (SL) may be located on the bezel region (NA) of the device substrate (100). The heating signal wiring (SL) may include a conductive material. The heating signal wiring (SL) may include a material having relatively low resistance. For example, the heating signal wiring (SL) may include the same material as the light-blocking pattern (231). The heating signal wiring (SL) may be located between the device substrate (100) and the device buffer film (110). The heating signal wiring (SL) may extend along the edge of the display region (AA). For example, the heating signal wiring (SL) may cross between the gate driver (GIP1, GIP2) and the display region (AA).

[0071] Heating patterns (710) may be located on the overcoat layer (140) of the bezel area (NA). The heating patterns (710) may be located on the heating signal wiring (SL). For example, the heating patterns (710) may be located side by side along the heating signal wiring (SL). Each heating pattern (710) may be electrically connected to the heating signal wiring (SL). For example, the overcoat layer (140) of the bezel area (NA) may include heating contact holes (141h) that partially expose the heating signal wiring (SL). Each heating pattern (710) may be connected to the heating signal wiring (SL) through one of the heating contact holes (141h).

[0072] Each heating pattern (710) may include an area that overlaps with the heating signal wiring (SL). Each heating pattern (710) may extend outward from the heating signal wiring (SL). For example, each heating pattern (710) may include an area that extends parallel to the heating signal wiring (SL). Each heating pattern (710) may have a different shape from adjacent heating patterns (710). For example, the heating patterns (710) may be formed such that they have repeating shapes that are staggered from each other.

[0073] The heating patterns (710) may include a conductive material. The heating patterns (710) may be formed using the formation process of the light-emitting elements (300). For example, the heating patterns (710) may include the same material as the first electrode (310) of each light-emitting element (310).

[0074] At least one moisture barrier trench (142h) may be formed in the overcoat layer (140) of the bezel area (NA). For example, the heating signal wiring (SL) may be located between the moisture barrier trenches (142h). Each moisture barrier trench (142h) may completely penetrate the overcoat layer (140). For example, each moisture barrier trench (142h) may partially expose the lower protective film (130). The moisture barrier trenches (142h) may extend along the edge of the display area (AA). For example, each moisture barrier trench (142h) may extend parallel to the heating signal wiring (SL).

[0075] A blocking pattern (720) may be located within each moisture blocking trench (142h). For example, the surface of each moisture blocking trench (142h) may be covered by the blocking pattern (720). The end of the blocking pattern (720) may be located on the overcoat layer (140).

[0076] The blocking pattern (720) may include a material capable of blocking moisture. The blocking pattern (720) may be formed using the formation process of the light-emitting elements (310). For example, the blocking pattern (720) may include the same material as the first electrode (310) of each light-emitting element (310). The blocking pattern (720) may include the same material as the heating pattern (710). For example, the blocking pattern (720) may be formed simultaneously with the heating pattern (710). The light-emitting layer (320) and the second electrode (330) of each light-emitting element (300) may be laminated on the blocking pattern (720). Accordingly, in a display device according to an embodiment of the present invention, the penetration of external moisture through the overcoat layer (140) can be blocked.

[0077] A sealing substrate (600) may be attached to the second electrode (330) of each light-emitting element (300) by a front adhesive layer (500). For example, the front adhesive layer (500) may include an adhesive material. The sealing substrate (600) can prevent damage to the light-emitting elements (300) caused by external moisture and impact. For example, the sealing substrate (600) may include a material having a certain strength or higher. The sealing substrate (600) may include a material having relatively high thermal conductivity. For example, the sealing substrate (600) may include a metal such as aluminum (Al), nickel (Ni), and iron (Fe). Accordingly, in a display device according to an embodiment of the present invention, heat generated by the pixel driving circuit (DC) of each pixel area (PA) and the light-emitting element (300) can be released through the sealing substrate (600). Accordingly, in the display device according to the embodiment of the present invention, the degradation of the light-emitting layer (320) can be effectively prevented.

[0078] The front adhesive layer (500) and the encapsulation substrate (600) may extend onto the bezel region (BZ) of the device substrate (100). For example, the surface of each heating pattern (710) facing the device substrate (100) may come into direct contact with the front adhesive layer (500).

[0079] FIGS. 5a to 9a and 5b to 9b are drawings sequentially illustrating a method for forming a display device according to an embodiment of the present invention.

[0080] A method for forming a display device according to an embodiment of the present invention will be described with reference to FIGS. 4a to 9a and 4b to 9b. First, referring to FIGS. 5a and 5b, a method for forming a display device according to an embodiment of the present invention comprises the steps of: providing a device substrate (100) comprising a display area (AA) where a pixel area (PA) is located and a bezel area (BZ) located outside the display area (AA); forming a light-blocking pattern (231), a data line (DL), and a power supply voltage line (PL) on the pixel area (PA) of the device substrate (100); forming a heating signal line (SL) on the bezel area (BZ) of the device substrate (100); forming a device buffer film (110) on the device substrate (100) on which the light-blocking pattern (231), the data line (DL), the power supply voltage line (PL), and the heating signal line (SL) are formed; forming semiconductor patterns (211, 221) on the device buffer film (110) of the pixel area (PA); and forming the device on which the semiconductor patterns (211, 221) are formed. The method may include the steps of forming a gate insulating film (120) on a substrate (100), forming gate electrodes (213, 223), source electrodes (215, 225), drain electrodes (217, 227), and capacitor electrode (232) on the gate insulating film (120) of the pixel region (PA), forming a lower protective film (130) on the device substrate (100) on which the gate electrodes (213, 223), source electrodes (215, 225), drain electrodes (217, 227), and capacitor electrode (232) are formed, and forming an overcoat layer (140) on the lower protective film (130).

[0081] The light-blocking pattern (231) may be formed from a material having high reflectivity. The heating signal wiring (SL) may be formed from a conductive material. The heating signal wiring (SL) may be formed simultaneously with the light-blocking pattern (231). For example, the step of forming the light-blocking pattern (231) and the heating signal wiring (SL) may include the step of forming a metal film having high reflectivity on the device substrate (100) and the step of patterning the metal film. The heating signal wiring (SL) may include the same material as the light-blocking pattern (231).

[0082] The gate electrode (213, 223), the source electrode (215, 225), the drain electrode (217, 227), and the capacitor electrode (232) may include a conductive material. The gate electrode (213, 223), the source electrode (215, 225), the drain electrode (217, 227), and the capacitor electrode (232) may be formed simultaneously. For example, the step of forming the gate electrode (213, 223), the source electrode (215, 225), the drain electrode (217, 227), and the capacitor electrode (232) may include the step of forming a metal film comprising a metal having a high reflectivity on the gate insulating film (120) and the step of patterning the metal film. The gate electrode (213, 223), the source electrode (215, 225), the drain electrode (217, 227), and the capacitor electrode (232) may contain the same material.

[0083] The semiconductor pattern (211, 221), the gate electrode (213, 223), the source electrode (215, 225), and the drain electrode (217, 227) can form thin-film transistors (T1, T2). The light-blocking pattern (231) can function as a capacitor electrode. For example, a storage capacitor (Cst) can be composed of the light-blocking pattern (231) and the capacitor electrode (232).

[0084] As illustrated in FIG. 6a and 6b, a method for forming a display device according to an embodiment of the present invention may include the step of forming an electrode contact hole, a heating contact hole (141h), and at least one moisture blocking trench (142h) in the overcoat layer (140).

[0085] The electrode contact holes may be formed within each pixel area (PA) of the display area (AA). For example, each electrode contact hole may partially expose the drain electrode (217, 227) of one of the thin-film transistors (T1, T2) of each pixel area (PA). The heating contact hole (141h) and the moisture barrier trench (142h) may be formed in the overcoat layer (140) of the bezel area (NA). The heating contact hole (141h) may overlap with the heating signal wiring (SL). For example, the heating contact hole (141h) may partially expose the heating signal wiring (SL). The moisture barrier trench (142h) may be formed around the heating contact hole (141h). For example, the moisture barrier trench (142h) may be formed between the heating signal wiring (SL) and the display area (AA). The moisture barrier trench (142h) can completely penetrate the overcoat layer (140). For example, the moisture barrier trench (142h) can partially expose the lower protective film (130) of the bezel area (NA).

[0086] As illustrated in FIG. 7a and 7b, a method for forming a display device according to an embodiment of the present invention may include the step of forming a first electrode (310), a heating pattern (710), and a blocking pattern (720) on the overcoat layer (140) in which the electrode contact hole, the heating contact hole (141h), and the moisture blocking trench (142h) are formed.

[0087] The first electrode (310) may be electrically connected to one of the thin-film transistors (T1, T2) through the electrode contact hole. The heating pattern (710) may be electrically connected to the heating signal wiring (SL) through the heating contact hole (141h). The blocking pattern (720) may be formed within the moisture blocking trench (142h). For example, the blocking pattern (720) may completely cover the surface of the moisture blocking trench (142h). The end of the blocking pattern (720) may be located on the overcoat layer (140).

[0088] The first electrode (310), the heating pattern (710), and the blocking pattern (720) may be formed simultaneously. For example, the step of forming the first electrode (310), the heating pattern (710), and the blocking pattern (720) may include the step of forming a conductive material layer on the overcoat layer (140) on which the electrode contact hole, the heating contact hole (141h), and the moisture blocking trench (142h) are formed, and the step of patterning the conductive material layer.

[0089] As illustrated in FIG. 8a and 8b, a method for forming a display device according to an embodiment of the present invention may include the steps of forming a bank insulating film (150) covering the edge of the first electrode (310) on the overcoat layer (140), and sequentially forming a light-emitting layer (320) and a second electrode (330) on the device substrate (100) on which the bank insulating film (150) is formed.

[0090] The light-emitting layer (320) and the second electrode (330) laminated on a portion of the first electrode (310) exposed by the bank insulating film (150) may constitute a light-emitting element (300). The light-emitting layer (320) and the second electrode (330) may be formed on the display area (AA) and the bezel area (NA) of the element substrate (100). For example, the heating pattern (710) and the blocking pattern (720) may be covered by the light-emitting layer (320) and the second electrode (330).

[0091] As illustrated in FIGS. 9a and 9b, a method for forming a display device according to an embodiment of the present invention may include the step of removing the light-emitting layer (320) and the second electrode (330) stacked on the heating pattern (710).

[0092] The step of removing the light-emitting layer (320) and the second electrode (330) stacked on the heating pattern (710) may utilize resistive heating (Joule heating). For example, the step of removing the light-emitting layer (320) and the second electrode (330) stacked on the heating pattern (710) may include the step of applying a high current through the heating signal wiring (SL). That is, in a display device according to an embodiment of the present invention, the light-emitting layer (320) and the second electrode (330) stacked on the heating pattern (710) can be removed by the high current applied to the heating pattern (710) through the heating signal wiring (SL). Accordingly, in a display device according to an embodiment of the present invention, the tail portion of the light-emitting layer (320) can be removed without increasing the bezel area (NA). Accordingly, in the display device according to the embodiment of the present invention, deterioration of the light-emitting layer (320) due to external moisture can be prevented without a reduction in the display area (AA).

[0093] As illustrated in FIG. 4a and 4b, a method for forming a display device according to an embodiment of the present invention may include the step of attaching an encapsulation substrate (600) on the element substrate (100) on which the light-emitting element (300) is formed using a front adhesive layer (500).

[0094] The front adhesive layer (500) and the encapsulation substrate (600) may overlap with the display area (AA) and the bezel area (NA) of the device substrate (100). For example, the front adhesive layer (500) of the bezel area (NA) may come into direct contact with the surface of the heating pattern (710) facing the device substrate (100).

[0095] Consequently, the display device and the method for forming the same according to an embodiment of the present invention can form a heating signal wiring (SL) between the bezel region (NA) of the element substrate (100) and the overcoat layer (140), and then form heating patterns (710) electrically connected to the heating signal wiring (SL) on the overcoat layer (140), and then remove the light-emitting layer (320) and the second electrode (330) stacked on the heating patterns (710) using resistive heating. Accordingly, in the display device according to an embodiment of the present invention, the penetration of external moisture through the tail portion of the light-emitting layer (320) can be blocked without reducing the bezel region (NA).

[0096] In addition, the display device and the method for forming the same according to an embodiment of the present invention may form a moisture-blocking trench (142h) extending parallel to the heating signal wiring (SL) and cover the surface of the moisture-blocking trench (142h) with a blocking pattern (720). Accordingly, in the display device and the method for forming the same according to an embodiment of the present invention, the penetration of external moisture through the overcoat layer (140) can be prevented by the moisture-blocking trench (142h) and the blocking pattern (720) penetrating the overcoat layer (140) of the bezel area (NA). Therefore, in the display device according to an embodiment of the present invention, the deterioration of the light-emitting layer (320) due to external moisture can be effectively prevented.

[0097] A display device according to an embodiment of the present invention is described as having a heating pattern (710) having a shape that is symmetrical with respect to the heating signal wiring (SL). However, in a display device according to another embodiment of the present invention, the heating patterns (710) may have various shapes. For example, as shown in FIG. 10, in a display device according to another embodiment of the present invention, each heating pattern (710) may have a shape that extends in one direction from the heating signal wiring (SL). Accordingly, in a display device according to an embodiment of the present invention, the degree of freedom regarding the shape of the heating patterns (710) may be improved.

[0098] A display device according to an embodiment of the present invention is described such that the heating signal wiring (SL) is connected to the pad portion (PAD). However, as illustrated in FIG. 11, a display device according to another embodiment of the present invention may have a heating pad (SP) electrically connected to the heating signal wiring (SL) located on the bezel area (NA) of the element substrate (100). For example, the heating pad (SP) may be located side by side with the pad portion (PAD). Accordingly, in a display device according to another embodiment of the present invention, the high current applied through the heating signal wiring (SL) may not affect the surrounding wiring. Additionally, in a display device according to another embodiment of the present invention, after removing the light-emitting layer (320) and the second electrode (330) located on the heating patterns (710), the connection between the heating signal wiring (SL) and the heating pad (SP) may be severed. Therefore, in a display device according to an embodiment of the present invention, defects caused by unnecessary electrical connections can be effectively prevented.

[0099] As illustrated in FIG. 12, a display device according to another embodiment of the present invention may include a moisture blocking hole (143h) penetrating the overcoat layer (140) between the heating contact hole (141h) and the moisture blocking trench (142h). For example, the moisture blocking hole (143h) may be filled by one of the heating patterns (710). One of the heating patterns (710) may extend inwardly into the moisture blocking hole (143h). The moisture blocking hole (143h) may be spaced apart from the heating signal wiring (SL). Accordingly, in the display device according to an embodiment of the present invention, moisture penetrating through the overcoat layer (140) of the bezel area (NA) may be significantly reduced. Thus, in the display device according to an embodiment of the present invention, deterioration of the light-emitting layer (320) due to external moisture can be effectively prevented. Explanation of the symbols

[0100] 100: Device substrate 140: Overcoat layer 141h: Heating contact hole 142h: Moisture barrier trench 710: Heating pattern 720: Blocking pattern SL: Heating signal wiring

Claims

Claim 1 A display device comprising: an overcoat layer located on a display area and a bezel area of ​​a device substrate; a light-emitting element located on the overcoat layer of the display area; a heating signal wiring located between the bezel area and the overcoat layer of the device substrate; heating patterns located on the overcoat layer of the bezel area and electrically connected to the heating signal wiring; a front adhesive layer located on the light-emitting element and extending onto the bezel area of ​​the device substrate; and an encapsulation substrate located on the front adhesive layer and overlapping with the display area and the bezel area of ​​the device substrate, wherein the surface of the heating pattern facing the device substrate is in contact with the front adhesive layer. Claim 2 A display device according to claim 1, wherein the heating signal wiring extends along the edge of the display area, and the heating patterns are positioned side by side along the heating signal wiring. Claim 3 In claim 1, each heating pattern is a display device extending to the outside of the heating signal wiring. Claim 4 In claim 3, a display device wherein each heating pattern includes an area extending in the same direction as the heating signal wiring. Claim 5 In claim 3, each heating pattern is a display device having a shape symmetrical with respect to the heating signal wiring. Claim 6 A display device according to claim 1, wherein the light-emitting element comprises a first electrode, a light-emitting layer, and a second electrode stacked in order, and the heating pattern comprises the same material as the first electrode of the light-emitting element. Claim 7 A display device according to claim 1, further comprising: at least one moisture-blocking trench penetrating the overcoat layer of the bezel area; and a blocking pattern covering the sidewall of the moisture-blocking trench, wherein the moisture-blocking trench extends parallel to the heating signal wiring. Claim 8 In claim 7, the blocking pattern comprises a display device having the same material as the heating pattern. Claim 9 A display device according to claim 7, further comprising a lower protective film located between the element substrate and the overcoat layer and covering the heating signal wiring, wherein the moisture barrier trench exposes a portion of the lower protective film. Claim 10 A display device according to claim 7, further comprising at least one moisture blocking hole located between the heating signal wiring and the moisture blocking trench and penetrating the overcoat layer, wherein the heating pattern extends into the moisture blocking hole. Claim 11 A display device according to claim 1, further comprising: a pad portion located on the bezel area of ​​the element substrate; a pixel driving circuit located between the element substrate and the overcoat layer of the display area and electrically connected to the light-emitting element; at least one signal wiring crossing the bezel area and the display area and electrically connecting the pad portion to the pixel driving circuit; and a heating pad located side-by-side with the pad portion on the bezel area of ​​the element substrate, wherein the heating signal wiring is electrically connected to the heating pad.

Images