Imaging device and distance measuring system

Abstract

The imaging device (1) has a semiconductor substrate (66), a first pixel array (11), a second pixel array (12), and a control unit (40). The first pixel array (11) is provided on the semiconductor substrate (66) and has a stacked structure in which a first electrode (77), a photoelectric conversion layer (79), and a second electrode (80) are stacked in sequence, and a first light receiving pixel (13) that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions. The second pixel array (12) is provided within the semiconductor substrate (66) at a position overlapping with the first light receiving pixel (13) in the thickness direction of the semiconductor substrate (66), and a second light receiving pixel (14) that photoelectrically converts light in a second wavelength region including an infrared light region is arranged in two dimensions. The control unit (40) controls the driving of the second pixel array (12) based on the signal photoelectrically converted by the first pixel array (11).

Description

Technology Field

[0001] The present disclosure relates to an imaging device and a distance measuring system. Background Technology

[0002] There is an imaging device comprising a pixel array for capturing visible light images and a pixel array for capturing infrared light images stacked thereon. As such an imaging device, there is a method for controlling the capture of visible light images using information from infrared light images (see, for example, Patent Document 1). Prior art literature

[0003] Japanese Patent Publication No. 2018-142838 The problem to be solved

[0004] However, in the aforementioned conventional technology, information from visible light images was not effectively utilized.

[0005] Accordingly, the present disclosure proposes an imaging device and a distance measuring system capable of effectively utilizing information from a visible light image. means of solving the problem

[0006] According to the present disclosure, an imaging device is provided. The imaging device comprises a semiconductor substrate, a first pixel array, a second pixel array, and a control unit. The first pixel array is provided on the semiconductor substrate and has a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in sequence, and a first light-receiving pixel that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions. The second pixel array is provided within the semiconductor substrate at a position overlapping with the first light-receiving pixel in the thickness direction of the semiconductor substrate, and a second light-receiving pixel that photoelectrically converts light in a second wavelength region including an infrared light region is arranged in two dimensions. The control unit controls the driving of the second pixel array based on a signal photoelectrically converted by the first pixel array. Brief explanation of the drawing

[0007] FIG. 1 is an explanatory diagram showing an example of the configuration of a distance measuring system according to the present disclosure. FIG. 2 is an explanatory diagram showing an example of the configuration of an imaging device according to the present disclosure. FIG. 3 is a cross-sectional explanatory diagram of a pixel array according to the present disclosure. FIG. 4 is a circuit diagram showing an example of a first readout circuit according to the present disclosure. FIG. 5 is an explanatory diagram showing an example of arrangement viewed in a plane of pixels according to the present disclosure. FIG. 6 is an explanatory diagram showing an example of a pixel arrangement viewed in a plane according to the present disclosure. FIG. 7 is an explanatory diagram showing an example of a pixel arrangement viewed in a plane according to the present disclosure. FIG. 8 is an explanatory diagram showing an example of a pixel arrangement viewed in a plane according to the present disclosure. FIG. 9 is an explanatory diagram showing an example of operation of an imaging device according to the present disclosure. FIG. 10 is a flowchart illustrating an example of a process performed by an imaging device according to the present disclosure. FIG. 11 is a flowchart showing a variation of the processing performed by the imaging device according to the present disclosure. FIG. 12 is an explanatory diagram showing an example of the configuration of a measuring system according to a variation of the present disclosure. FIG. 13 is a flowchart illustrating an example of processing performed by an imaging device according to a variation of the present disclosure. Specific details for implementing the invention

[0008] Hereinafter, embodiments of the present disclosure will be described in detail based on the drawings. In addition, in each of the following embodiments, the same parts are given the same number to omit redundant descriptions.

[0009] [1. Example of a distance measuring system configuration]

[0010] FIG. 1 is an explanatory diagram showing an example configuration of a distance measuring system according to the present disclosure. The distance measuring system (100) shown in FIG. 1 is a system that realizes a d (direct) TOF sensor that captures, for example, an infrared light image (hereinafter referred to as a "distance image") of a subject irradiated with infrared light, and measures the distance to the subject based on the Time of Flight (TOF) from the distance image. The distance measuring system (100) may also be a system that realizes i (indirect) ToF.

[0011] The measuring system (100) comprises a light source (101), an imaging optical system (102), an imaging device (1), an ISP (Image Signal Processor) (103), an input device (104), a display device (105), and a data storage unit (106).

[0012] The light source (101) is an infrared laser that irradiates infrared light toward a subject to be measured. The light source (101) is driven and controlled by an ISP (103) to irradiate infrared light while flashing at high speed at a predetermined high frequency. The imaging optical system (102) includes a lens, etc., that forms an image of infrared light reflected by the subject onto a light receiving part of the imaging device (1).

[0013] The imaging device (1) is a device that captures a distance image, which is an infrared light image of a subject, and outputs the image data of the distance image to the ISP (103). The imaging device (1) can capture not only a distance image but also a visible light image. When the imaging device (1) captures a visible light image, it outputs the image data of the visible light image to the ISP (103) as needed.

[0014] The ISP (103) controls the driving of the light source (101), measures the distance to the subject based on the light flight time of infrared light or phase misalignment information with the input light from the image data of the distance image input from the imaging device (1), and outputs the measurement result and the distance image to the display device (105) and the data storage unit (106). Additionally, when the ISP (103) receives image data of a visible light image from the imaging device (1), it outputs the image data of the visible light image to the display device (105) and the data storage unit (106) as needed. Additionally, the ISP (103) may output colored three-dimensional information, which is a composite of distance information and RGB information, to the display device (105) and the data storage unit (106) as needed.

[0015] The display device (105) is, for example, a liquid crystal display and displays an infrared light image or a visible light image, which is a measurement result measured by the ISP (103). The data storage unit (106) is, for example, a memory and stores image data of an infrared light image or a visible light image, which is a measurement result measured by the ISP (103).

[0016] The input device (104) receives user operations for performing various settings of the measuring system (100) and user operations for performing measuring by the measuring system (100), and outputs a signal according to the user operations to the ISP (103).

[0017] Additionally, the imaging device (1) comprises a pixel array (10), an AD (Analog to Digital) converter (20), and a data processing unit (30). Also, FIG. 1 shows a part of the components of the imaging device (1). Specific configuration examples of the imaging device (1) will be described later with reference to FIG. 2.

[0018] The pixel array (10) converts light incident from the imaging optical system (102) into a pixel signal of a distance image and a pixel signal of a visible light image, and outputs it to the AD converter (20). The AD converter (20) converts the pixel signals of the distance image and the visible light image into AD and outputs them to the data processing unit (30). The data processing unit (30) performs various image processing and image analysis on the image data of the distance image and the visible light image, and outputs the image data after image processing and image analysis to the ISP (103).

[0019] Here, if the distance measuring system (100) is an iToF sensor, for example, it is necessary to calculate a distance image (distance data) from four sets of phase data. That is, four sets of phase data are first accumulated in memory, and then one set of distance images (distance data) is generated by calculation. In this case, a memory unit (for example, SRAM (Static Random Access Memory, etc.)) that temporarily stores phase data needs to be installed separately from the data storage unit (106) (for example, flash memory).

[0020] Since SRAM is a memory capable of writing or reading information at high speed, it is suitable for distance calculation processing that needs to be performed at high speed. Such a memory only needs to be able to store information when the power is ON. In the case of an iToF sensor, the distance measuring system (100) uses the memory built into the ISP (103) for temporary storage of phase data.

[0021] In order to improve the measurement precision, this measurement system (100) needs to operate the light source (101) and the pixel array (10) that captures the distance image at a high frequency, and the power consumption is high compared to a general visible light sensor. Therefore, the measurement system (100) reduces power consumption by effectively utilizing the visible light image data within the imaging device (1).

[0022] Specifically, the imaging device (1) first captures a visible light image with relatively low power consumption required for imaging, and does not capture a distance image until a moving object is detected in the visible light image. After that, when the imaging device (1) detects a moving object in the visible light image, it emits a light source (101) to capture a distance image with relatively high power consumption required for imaging and performs distance measurement. By doing so, the distance measurement system (100) can appropriately reduce power consumption. Next, an example of the configuration of such an imaging device (1) will be described.

[0023] [2. Example of Imaging Device Configuration]

[0024] FIG. 2 is an explanatory diagram showing an example of the configuration of an imaging device according to the present disclosure. As shown in FIG. 2, the imaging device (1) comprises a pixel array (10), a global control circuit (41), a first row control circuit (42), a second row control circuit (43), a first read circuit (21), a first data processing unit (22), a second read circuit (23), and a second data processing unit (24). The global control circuit (41), the first row control circuit (42), and the second row control circuit (43) are included in the control unit (40) shown in FIG. 1.

[0025] The pixel array (10) comprises a first pixel array (11) and a second pixel array (12). In the first pixel array (11), a plurality of first light-receiving pixels (hereinafter referred to as "first pixels") (13) corresponding to each pixel of a visible light image are arranged in two dimensions (matrix shape). In the second pixel array (12), a plurality of second light-receiving pixels (hereinafter referred to as "second pixels") (14) corresponding to each pixel of an infrared light image are arranged in two dimensions (matrix shape).

[0026] The first pixel (13) photoelectrically converts light in a first wavelength region, including a visible light region, into a signal charge according to the amount of light received. Here, the first pixel (13) photoelectrically converts red light, green light, and blue light. The second pixel (14) photoelectrically converts light in a second wavelength region, including an infrared light region. Here, the second pixel (14) photoelectrically converts infrared light into a signal charge according to the amount of light received.

[0027] The first pixel array (11) is stacked on the second pixel array (12). The first pixel array (11) converts incident visible light into photoelectric power to capture a visible light image. The second pixel array (12) converts infrared light transmitted through the first pixel array into photoelectric power to capture an infrared light image. Accordingly, the imaging device (1) can capture a visible light image and an infrared light image using one pixel array (10).

[0028] The global control circuit (41) controls the first row control circuit (42) and the distance measurement pulse generator (50) based on a control signal from the ISP (103). The first row control circuit (42) drives and controls the first pixel array (11) to capture a visible light image. The first pixel array (11) converts visible light into signal charge and accumulates it. The first reading circuit (21) reads a signal corresponding to the signal charge from the first pixel array (11) and outputs it to the first data processing unit (22).

[0029] The first data processing unit (22) obtains image data of a visible light image by converting the signal input from the first reading circuit (21) into an AD, and performs a predetermined image processing and image analysis on the image data. The first data processing unit (22) outputs the image data after image processing and image analysis to the ISP (103) as needed.

[0030] Additionally, the first data processing unit (22) outputs the result of image analysis to the second row control circuit (43) to operate the second row control circuit (43). Here, the first data processing unit (22), as an image analysis, determines, for example, whether a subject within a visible light image is moving or not, and operates the second row control circuit (43) only when it is moving.

[0031] That is, the first data processing unit (22) detects a first pixel (13) that has a change from the image data captured by the first pixel array (11). Here, the first pixel (13) that has a change is, for example, a first pixel (13) in which the difference between the signal charge amount accumulated in the image data of the previous frame and the signal charge amount accumulated in the image data of the current frame exceeds a threshold.

[0032] And, the second row control circuit (43) starts driving the second pixel array (12) when a first pixel (13) that has changed according to the first data processing unit (22) is detected. By doing so, the imaging device (1) can appropriately reduce the power consumption required to drive the second pixel array (12).

[0033] Additionally, the first data processing unit (22) may be configured to read a signal only from the second pixel (14) corresponding to the changed first pixel (13) and to control the second reading circuit (23). By doing so, the imaging device (1) can also reduce the power consumption of the second reading circuit (23).

[0034] Additionally, the first data processing unit (22) may drive only the second pixel (14) corresponding to the first pixel (13) that has a change in the first pixel array (11) by the second row control circuit (43). By doing so, the imaging device (1) can further reduce the power consumption required to drive the second pixel array (12).

[0035] Additionally, the first data processing unit (22) may provide a threshold for the amount of change in the first pixel array (11), rather than a value indicating whether the subject is moving or not, and may drive only the second pixel corresponding to the first pixel (13) whose amount of change due to the movement of the subject exceeds the threshold by the second row control circuit (43). By doing so, the imaging device (1) can suppress the number of second pixels (14) driven to the minimum necessary level.

[0036] Additionally, the first data processing unit (22) may be configured to change the operating frequency of the second row control circuit (43) according to the change in the first pixel array (11). For example, the first data processing unit (22) increases the operating frequency of the second row control circuit (43) when the change in the first pixel array (11) (movement speed of the subject) is large. By doing so, the imaging device (1) can capture a clear image of a subject with a large movement speed using the second pixel array.

[0037] The second row control circuit (43) controls the second pixel array (12) to take an infrared light image when it is determined by the first data processing unit (22) that the subject is moving. The second pixel array (12) converts infrared light into signal charge and accumulates it. The second reading circuit (23) reads a signal corresponding to the signal charge from the second pixel array (12) and outputs it to the second data processing unit (24).

[0038] The second data processing unit (24) converts the signal input from the second reading circuit (23) into an AD to acquire image data of a distance image, which is an infrared light image, and performs a predetermined image processing on the image data and outputs it to the ISP (103).

[0039] In addition, determining the range of the second pixel (14) to be driven in the second pixel array (12) is not limited to the first data processing unit (22). For example, determining the range of the second pixel (14) to be driven may be the control unit (40) (second row control circuit (43)), a judgment circuit installed exclusively, or the ISP (103).

[0040] In this case, the second row control circuit (43), the judgment circuit, or the ISP (103) acquires image data of a visible light image from the first data processing unit (22) and detects a first pixel (13) that has changed from the image data. Then, the second row control circuit (43), the judgment circuit, or the ISP (103) determines the range of the second pixel (14) that drives the range of the second pixel (14) placed at a position overlapping with the detected first pixel (13).

[0041] In addition, since the distance measuring system (100) cannot calculate the distance from one distance image in the case of an iToF sensor, as described above, it is possible to store distance images in memory inside the ISP (103), for example, and calculate the distance to the subject from multiple distance images stored inside the ISP (103).

[0042] [3. Cross-sectional Structure of Pixel Array]

[0043] Next, with reference to FIG. 3, the cross-sectional structure of a pixel array according to the present disclosure will be described. FIG. 3 is a cross-sectional explanatory diagram of a pixel array according to the present disclosure. FIG. 3 schematically shows a cross-section of a pixel array (10) corresponding to a portion of a second pixel (14). In addition, for convenience, the forward direction of the Z-axis in the orthogonal coordinate system shown in FIG. 3 will be described as "up" and the negative direction of the Z-axis will be described as "down".

[0044] As shown in FIG. 2, the pixel array (10) comprises a so-called longitudinal spectral imaging element having a structure in which the second pixel (14) and the first pixel (13) are stacked in the Z-axis direction, which is the thickness direction. The pixel array (10) comprises an intermediate layer (60) provided between the second pixel (14) and the first pixel (13), and a multilayer wiring layer (61) provided on the opposite side from the first pixel (13) when viewed from the second pixel (14).

[0045] Additionally, the pixel array (10) has a sealing film (62), a color filter (63), a flattening film (64), and an on-chip lens (65) stacked sequentially along the Z-axis direction from a position close to the first pixel (13) on the side opposite to the intermediate layer (60) when viewed from the first pixel (13).

[0046] The first pixel (13) is an indirect TOF (hereinafter referred to as "iTOF") sensor that acquires a distance image (distance information) by means of TOF. The first pixel (13) has a semiconductor substrate (66), a photoelectric conversion region (67), a fixed charge layer (68), a pair of gate electrodes (69A, 69B), floating diffusion (70A, 70B), and a through electrode (71).

[0047] The semiconductor substrate (66) is, for example, an n-type silicon substrate and has a P-well in a predetermined internal region. The lower surface of the semiconductor substrate (66) faces the multilayer wiring layer (61). The upper surface of the semiconductor substrate (66) faces the intermediate layer (60) and has a fine uneven structure formed thereon. As a result, the upper surface of the semiconductor substrate (66) has the effect of appropriately scattering incident infrared light to expand the optical path length. Additionally, the semiconductor substrate (66) may also have a fine uneven structure formed on its lower surface.

[0048] The photoelectric conversion region (67) is a photoelectric conversion element composed of a PIN (Positive Intrinsic Negative) type photodiode. The photoelectric conversion region (67) receives light with wavelengths (infrared light) in the infrared region among the light incident on the pixel array (10), and converts it into signal charge according to the amount of received light and accumulates it.

[0049] The fixed charge layer (68) is provided to cover the upper surface and side surface of the semiconductor substrate (66). The fixed charge layer (68) contains a negative fixed charge that suppresses the generation of dark current caused by the interface level of the upper surface, which is the light-receiving surface of the semiconductor substrate (66).

[0050] The fixed charge layer (68) forms a hole accumulation layer near the upper surface of the semiconductor substrate (66) and suppresses the generation of electrons from the upper surface of the semiconductor substrate (66) by the hole accumulation layer. The fixed charge layer (68) also extends between the inter-pixel region light-blocking wall (72) and the photoelectric conversion region (67).

[0051] The gate electrodes (69A, 69B) extend from the lower surface of the semiconductor substrate (66) to a position reaching the photoelectric conversion region (67). When a predetermined voltage is applied, the gate electrodes (69A, 69B) transfer the signal charge accumulated in the photoelectric conversion region (67) to the floating diffusion (70A, 70B).

[0052] The floating diffusion (70A, 70B) is a floating diffusion region that temporarily holds the signal charge transmitted from the photoelectric conversion region (67). The signal charge held in the floating diffusion (70A, 70B) is read as a pixel signal by the second read circuit (23) (see FIG. 2).

[0053] In the multilayer wiring layer (61), wiring (74) is provided inside the insulating layer (73). The insulating layer (73) is formed, for example, by silicon oxide, etc. The wiring (74) is formed, for example, by a metal such as copper or gold. In addition, a first reading circuit (21) and a second reading circuit (23) (see FIG. 2) are also provided inside the insulating layer (73).

[0054] The intermediate layer (60) has an optical filter (75) embedded in the insulating layer (73) and an inter-pixel area light-blocking film (76). The optical filter (75) is formed, for example, by an organic material and selectively transmits light of a frequency mainly in the infrared light region. The inter-pixel area light-blocking film (76) reduces color mixing between adjacent pixels.

[0055] The first pixel (13) has a first electrode (77), a semiconductor layer (78), a photoelectric conversion layer (79), and a second electrode (80) stacked sequentially from a position close to the photoelectric conversion region (67). Additionally, the first pixel (13) has a charge accumulation electrode (82) positioned below the semiconductor layer (78) so as to face the semiconductor layer (78) through an insulating film (81).

[0056] The charge accumulation electrode (82) and the first electrode (77) are spaced apart from each other and, for example, are provided in the same layer. The first electrode (77) is, for example, connected to the top of the through electrode (71). The first electrode (77), the second electrode (80), and the charge accumulation electrode (82) are formed by a light-transmitting conductive film, for example, ITO (indium tin oxide) or IZO (indium zinc oxide with indium addition).

[0057] The photoelectric conversion layer (79) converts light energy into electrical energy and is formed by including two or more types of organic materials that function as, for example, a p-type semiconductor and an n-type semiconductor. The p-type semiconductor functions as an electron donor. The n-type semiconductor functions as an electron acceptor. The photoelectric conversion layer (79) has a bulk heterojunction structure. The bulk heterojunction structure is a p / n junction surface formed by mixing a p-type semiconductor and an n-type semiconductor. The photoelectric conversion layer (79) separates incident light into electrons and holes at the p / n junction surface.

[0058] A color filter (63) that transmits visible light (red light (R), green light (G), blue light (B)) is provided on the upper layer of the photoelectric conversion layer (79). Because of this, the photoelectric conversion layer (79) converts the incident visible light into photoelectric.

[0059] The charge accumulation electrode (82) forms a capacitor together with the insulating film (81) and the semiconductor layer (78) to accumulate signal charge generated in the photoelectric conversion layer (79) in the region facing the charge accumulation electrode (82) through the insulating film (81) in the semiconductor layer (78). In this embodiment, the charge accumulation electrode (82) is provided at a position corresponding to each of the color filter (63) and the on-chip lens (65).

[0060] In the first pixel (13), light incident from the second electrode (80) is absorbed in the photoelectric conversion layer (79). The excitons (electron-hole pairs) generated by this move to the interface between the electron donor and the electron acceptor constituting the photoelectric conversion layer (79) and are separated into electrons and holes. The electrons and holes generated here move to the second electrode (80) or the semiconductor layer (78) and accumulate due to the internal electric field caused by the carrier concentration difference or the potential difference between the first electrode (77) and the second electrode (80).

[0061] For example, the first electrode (77) is referred to as a positive potential, and the second electrode (80) is referred to as a negative potential. In this case, the holes generated in the photoelectric conversion layer (79) move toward the second electrode (80). The electrons generated in the photoelectric conversion layer (79) are attracted to the charge accumulation electrode (82) and are accumulated in the region corresponding to the charge accumulation electrode (82) through the insulating film (81) in the semiconductor layer (78).

[0062] Among the semiconductor layer (78), electrons accumulated in the region corresponding to the charge accumulation electrode (82) through the insulating film (81) are read out as follows. For example, a potential V1 is applied to the first electrode (77), and a potential V2 is applied to the charge accumulation electrode (82). At this time, the potential V1 is made higher than the potential V2. By doing so, electrons accumulated in the region corresponding to the charge accumulation electrode (82) through the insulating film (81) of the semiconductor layer (78) are transferred to the first electrode (77) and read out.

[0063] In this way, by providing a semiconductor layer (78) on the lower layer of the photoelectric conversion layer (79) and accumulating charge (e.g., electrons) in the region corresponding to the charge accumulation electrode (82) through the insulating film (81) within the semiconductor layer (78), the following effect is obtained. Compared to the case where charge (e.g., electrons) is accumulated in the photoelectric conversion layer (79) without providing the semiconductor layer (78), the recombination of holes and electrons during charge accumulation is prevented, thereby increasing the transfer efficiency of the accumulated charge (e.g., electrons) to the first electrode (77). Here, the case of reading electrons has been described, but it may also be performed to read holes. In the case of reading holes, the relationship between the high and low potentials V1, V2, and V3 described above is reversed.

[0064] [4. First Read-out Circuit]

[0065] FIG. 4 is a circuit diagram illustrating an example of a first read circuit according to the present disclosure. The first read circuit (21) has, for example, a floating diffusion FD, a reset transistor RST, an amplification transistor AMP, and a select transistor SEL. The floating diffusion FD is connected between the first electrode (77) and the amplification transistor AMP. The floating diffusion FD converts a signal charge transmitted by the first electrode (77) into a voltage signal and outputs it to the amplification transistor AMP.

[0066] The reset transistor RST is connected between the floating diffusion FD and the power supply. When a driving signal is applied to the gate electrode of the reset transistor RST and the reset transistor RST turns on, the potential of the floating diffusion FD is reset to the level of the power supply. The amplifier transistor AMP has a gate electrode connected to the floating diffusion FD and a drain electrode connected to the power supply. The source electrode of the amplifier transistor AMP is connected to a vertical signal line through the select transistor SEL.

[0067] The select transistor SEL is connected between the source electrode of the amplification transistor AMP and the vertical signal line. When a driving signal is applied to the gate electrode of the select transistor SEL and the select transistor SEL turns on, the pixel signal output from the amplification transistor AMP is output to the AD converter (20) through the SEL and the vertical signal line. The AD converter (20) converts the pixel signal into an AD based on a control signal input from the control unit (40) and outputs it to the data processing unit (30).

[0068] [5. Example of pixel arrangement]

[0069] Next, with reference to FIGS. 5 to 8, an example of arrangement viewed in a pixel plane according to the present disclosure will be described. FIGS. 5 to 8 are explanatory drawings showing an example of arrangement viewed in a pixel plane according to the present disclosure. As shown in FIG. 5, a plurality of on-chip lenses (65) are arranged in a two-dimensional (matrix shape) at the top layer of the pixel array (10). In addition, as shown in FIG. 6, a plurality of color filters (63) are arranged in a two-dimensional (matrix shape) at a layer below the layer where the on-chip lenses (65) are arranged in the pixel array (10).

[0070] The color filter (63) includes a filter R that selectively transmits red light, a filter G that selectively transmits green light, and a filter B that selectively transmits blue light. Each color filter (63) (one filter R, G, and B) is provided at a position corresponding to one on-chip lens (65).

[0071] The corresponding positions referred to here are, for example, positions that overlap in the Z-axis direction. Each filter R, G, and B is arranged according to a color arrangement method, for example, known as a Bayer array. Furthermore, the arrangement of each filter R, G, and B is not limited to a Bayer array.

[0072] In addition, in the pixel array (10), a plurality of charge accumulation electrodes (82) in the first pixel array (11) are arranged in two dimensions (matrix shape) as shown in FIG. 7, in a layer below the layer where the color filter (63) is arranged. Also, in FIG. 7, each color filter (63) is shown with dashed lines to clarify the positional relationship between each charge accumulation electrode (82) and each color filter (63). Each charge accumulation electrode (82) is provided at a position corresponding to each of the filters R, G, and B. The corresponding positions here are, for example, positions that overlap each other in the Z-axis direction.

[0073] Additionally, in the pixel array (10), a plurality of photoelectric conversion regions (67) in the second pixel array (12) are arranged in two dimensions (matrix shape) as shown in FIG. 8, in a layer below the layer where the charge accumulation electrode (82) in the first pixel array (11) is arranged. A plurality of through electrodes (71) are provided around each photoelectric conversion region (67).

[0074] Additionally, in FIG. 8, to clarify the positional relationship between each photoelectric conversion area (67), each on-chip lens (65), and each color filter (63), each color filter (63) is indicated by a dashed line, and the on-chip lens (65) is indicated by a dotted line. Each photoelectric conversion area (67) is provided at a position corresponding to 16 on-chip lenses (65) and 16 color filters (63) arranged in a 4×4 matrix shape. The corresponding position here refers to a position that overlaps with each other, for example, in the Z-axis direction.

[0075] Additionally, it is stated here that one photoelectric conversion area (67) is provided for 16 on-chip lenses (65) and 16 color filters (63), but this is an example. For example, the pixel array (10) may have one photoelectric conversion area (67) provided for 4 on-chip lenses (65) and 16 color filters (63), or one photoelectric conversion area (67) provided for 1 on-chip lens (65) and 16 color filters (63).

[0076] [6. Example of Imaging Device Operation]

[0077] Next, with reference to FIG. 9, an example of operation of an imaging device according to the present disclosure will be described. FIG. 9 is an explanatory diagram showing an example of operation of an imaging device according to the present disclosure. As shown in FIG. 9, the imaging device (1) first performs a first pixel control by the control unit (40) (step S1) and drives the first pixel array (11) (step S2). By doing so, the first pixel array (11) photoelectrically converts incident light into a signal charge by the first pixel (13) and accumulates the signal charge.

[0078] After that, the imaging device (1) reads a pixel signal according to the signal charge from the first pixel array (11) by the first reading circuit (21) (step S3), and converts the pixel signal to AD by the first data processing unit (22). The first data processing unit (22) outputs the pixel signal after AD conversion (image data of a visible light image) as needed (step S4).

[0079] Additionally, the imaging device (1) evaluates the visible light image by the first data processing unit (22) (step S5). At this time, the first data processing unit (22) detects the first pixel (13) that has changed in the visible image. For example, the first data processing unit (22) detects the first pixel (13) in which the difference between the signal charge amount accumulated in the image data of the previous frame and the signal charge amount accumulated in the image data of the current frame exceeds a threshold. Also, the threshold is set by, for example, the ISP (103) (step S6). The first data processing unit (22) outputs the detection result of the first pixel (13) that has changed to the second row control circuit (43) and the ISP (103).

[0080] When the first pixel (13) that has changed is detected, the ISP (103) performs sensor control (step S7) and drives the light source (101) (step S8). As a result, the light source (101) emits light while flashing at a high frequency and irradiates infrared light onto the subject (110). In this way, the light source (101) is only activated when the first pixel (13) that has changed is detected in the measuring system (100), so the power consumption of the light source (101) can be reduced compared to when the light source (101) is always activated.

[0081] Additionally, the ISP (103) may emit light from the light source (101) at a relatively low brightness before the first pixel (13) with a change is detected, and when the first pixel (13) with a change is detected, increase the light intensity of the light source (101) to emit light at a high brightness.

[0082] Meanwhile, the imaging device (1) performs second pixel control by the second row control circuit (43) (step S9) and drives the second pixel array (12) (step S10). By doing so, the second pixel array (12) converts infrared light incident through the first pixel array (11) into signal charge by the second pixel (14) and accumulates signal charge. In this way, the second row control circuit (43) drives the second pixel array (12) only when a first pixel (13) that has changed is detected, so the power consumption of the second pixel array (12) can be reduced compared to the case where the second pixel array (12) is driven continuously.

[0083] At this time, the second row control circuit (43) may drive all second pixels (14), but may also selectively drive the second pixels (14) corresponding to the first pixels (13) that have changed. By selectively driving the second pixels (14) corresponding to the first pixels (13) that have changed, the second row control circuit (43) can reduce power consumption.

[0084] Additionally, the second row control circuit (43) may increase the driving frequency of the second pixel (14) corresponding to the first pixel (13) more than usual when the amount of change of the first pixel (13) is large, for example, when the amount of change exceeds a threshold.

[0085] After that, the imaging device (1) reads a pixel signal according to the signal charge from the second pixel array (12) by the second reading circuit (23) (step S11), converts the pixel signal to AD by the second data processing unit (24), and outputs the pixel signal after AD conversion (image data of an infrared light image) (step S12).

[0086] The second data processing unit (24) reads pixel signals from all second pixels (14), performs AD conversion only on the pixel signals of the second pixels (14) corresponding to the first pixels (13) that have changed, and outputs the pixel signals after AD conversion (image data of an infrared light image). By doing so, the imaging device (1) can reduce the power consumption required for AD conversion.

[0087] Additionally, the second data processing unit (24) can read the pixel signal only for the pixel signal of the second pixel (14) corresponding to the first pixel (13) that has changed, perform AD conversion on the read pixel signal, and output the pixel signal after AD conversion (image data of an infrared light image). By doing so, the imaging device (1) can reduce the power consumption required to read the pixel signal.

[0088] In this way, the imaging device (1) utilizes information from a visible light image to drive and control the second pixel array (12) based on a signal converted by photoelectricity by the first pixel array (11), thereby reducing the power consumption of the light source (101) and the imaging device (1).

[0089] [7. Processing executed by the control unit]

[0090] Next, with reference to FIG. 10, an example of processing performed by an imaging device according to the present disclosure will be described. FIG. 10 is a flowchart illustrating an example of processing performed by an imaging device according to the present disclosure. As shown in FIG. 10, the imaging device (1) performs various settings and drives a first pixel array (11) under imaging conditions based on external light conditions to capture a visible light image that becomes a first image (step S101).

[0091] After that, the imaging device (1) converts visible light into photoelectric power using the first pixel array (11) to accumulate signal charge (step S102). Subsequently, the imaging device (1) reads the signal charge (signal) from the first pixel array (11) and converts the signal into AD (step S103). Subsequently, the imaging device (1) outputs a first image, which is a visible light image. At this time, the imaging device (1) may also output a first pixel (13) from the first pixel array (11).

[0092] After that, the imaging device (1) analyzes the information of the first image and determines the imaging conditions for the second image, which is an infrared light image (step S105). Specifically, the imaging device (1) detects the first pixel (13) that has changed and determines the coordinates (X1, Y1 to X2, Y2) of the scanning range of the second pixel (14). The scanning range determined at this time may be a single pixel, a set area of ​​multiple pixels, or a combination of these.

[0093] In addition, if the first data processing unit (22) is equipped with, for example, a face authentication function, the imaging device (1) may detect the position of the subject's face within the visible light image by the first data processing unit (22) and determine only the important location for authentication of the face as the scanning range. In addition, since the position of the subject may change over time, the imaging device (1) may appropriately track the position of the subject in the visible light image or set the scanning range to be large.

[0094] Next, the imaging device (1) performs various settings and drives the second pixel array (12) under imaging conditions based on external light conditions to capture an infrared light image (step S106). After that, the imaging device (1) converts the infrared light into photoelectric light using the second pixel array (12) and accumulates a signal charge (step S107).

[0095] After that, the imaging device (1) reads a signal charge (signal) from the second pixel (14) and converts the signal to AD (step S108). Subsequently, the imaging device (1) outputs the signal of the first pixel (13) and / or the second pixel (14) corresponding to the scanning range (X1, Y1 to X2, Y2) to the ISP (103) (step S109) and terminates the processing.

[0096] [8. Variations of processing executed by the control unit]

[0097] Next, with reference to FIG. 11, a modified example of the processing performed by the imaging device according to the present disclosure will be described. FIG. 11 is a flowchart illustrating a modified example of the processing performed by the imaging device according to the present disclosure. As shown in FIG. 11, the processing of the modified example is different in that the processing of steps S208 and S209 is different from the processing of steps S108 and S109 shown in FIG. 10. Since the processing of steps S101 to S107 shown in FIG. 11 is identical to the processing of steps S101 to S107 shown in FIG. 10, redundant descriptions are omitted here.

[0098] As shown in FIG. 11, the imaging device (1) accumulates a signal charge (signal) by the second pixel (14) (step S107), and then reads the signal of the second pixel (14) corresponding to the scan range (X1, Y1 to X2, Y2) determined in step S105 and performs AD conversion (step S208). Subsequently, the imaging device (1) outputs the signal of the first pixel (13) and / or the second pixel (14) to the ISP (103) (step S209) and terminates the processing.

[0099] [9. Configuration Example of a Measurement System Regarding Variations]

[0100] Next, a distance measuring system according to a modified example will be described. FIG. 12 is an explanatory diagram showing an example of the configuration of a distance measuring system according to a modified example of the present disclosure.

[0101] As shown in FIG. 12, the distance measuring system (100a) regarding the modified example differs from the distance measuring system (100) shown in FIG. 1 in that the control unit (40a) performs driving control of the light source (101), and other configurations are the same as those of the distance measuring system (100) shown in FIG. 1. For this reason, here, the driving control of the light source (101) by the control unit (40a) is explained, and redundant explanations regarding other configurations are omitted.

[0102] When the control unit (40a) determines, as a result of image analysis by the first data processing unit (22), that the subject of the visible light image is moving at a speed exceeding the threshold, it controls the measurement pulse generation unit (50) to increase the light emission intensity of the light source (101) above normal or to increase the operating frequency of the light source (101) above normal. Additionally, the control unit (40a) adjusts the driving frequency of the second pixel array (12) in accordance with the change in the operating frequency of the light source (101).

[0103] Additionally, the control unit (40a) lowers the light emission intensity of the light source (101) compared to normal when, for example, as a result of image analysis by the first data processing unit (22), the subject of the visible light image is a face and the face is located closer to the imaging optical system (102) than a preset location.

[0104] Accordingly, the control unit (40a) can irradiate an appropriate infrared light onto the subject according to the moving speed of the subject and the distance to the subject. Thus, the second pixel array (12) can capture an appropriate infrared light image for distance measurement.

[0105] [10. Processing executed by the control unit regarding the variation example]

[0106] Next, with reference to FIG. 13, an example of processing performed by an imaging device according to a modified example of the present disclosure will be described. FIG. 13 is a flowchart illustrating an example of processing performed by an imaging device according to a modified example of the present disclosure.

[0107] As shown in FIG. 13, the processing performed by the imaging device regarding the modified example is different in that the processing of steps S305 to S310 is different from the processing of steps S105 to S109 shown in FIG. 10. Since the processing of steps S101 to S104 shown in FIG. 13 is identical to the processing of steps S101 to S104 shown in FIG. 10, redundant descriptions are omitted here.

[0108] As shown in FIG. 13, the imaging device (1a) accumulates a signal charge (signal) by the first pixel array (11) (step S104), and then analyzes the information of the first image to determine the imaging conditions for the second image, which becomes an infrared light image.

[0109] At this time, the imaging device (1a) detects the first pixel (13) that has changed and determines the coordinates (X1, Y1 to X2, Y2) of the scanning range of the second pixel (14). In addition, the imaging device (1a) determines the light emission intensity and light emission time (operating frequency) of the light source (101) (step S305). After that, the imaging device (1a) emits light from the light source (101) at the determined light emission intensity and light emission time (operating frequency) (step S306).

[0110] Next, the imaging device (1a) opens the gate of the second pixel (14) at a timing according to the determined light emission time (operating frequency) (step S307), closes the gate of the second pixel (14) (step S308), and converts the infrared light received by the second pixel (14) into photoelectric energy to accumulate charge.

[0111] After that, the imaging device (1a) reads the signal of a pixel corresponding to the scanning range (X1, Y1 to X2, Y2) and performs AD conversion (step S309). Subsequently, the imaging device (1a) outputs the signal of the first pixel (13) and / or the second pixel (14) to the ISP (103) (step S310) and terminates the processing.

[0112] [11. Other embodiments]

[0113] The above-described embodiment is merely an example, and various modifications are possible. For example, the imaging device according to the present disclosure may omit the optical filter (75) shown in FIG. 3. When the optical filter (75) is not provided, both the first pixel array (11) and the second pixel array (12) capture a visible light image. Here, for example, if the thickness of the photoelectric conversion layer (79) is made thinner than the thickness shown in FIG. 3, the light reception sensitivity of the first pixel array (11) is reduced.

[0114] By utilizing these properties, the imaging device captures a first image with low sensitivity using a first pixel array (11), captures a second image with higher sensitivity than the first image using a second pixel array (12), and outputs the first image and the second image to an ISP (103). By doing so, the ISP (103) can generate an HDR image by combining the first image and the second image using HDR (High Dynamic Range).

[0115] In addition, in this configuration, it is preferable to provide one photoelectric conversion region (67) for one charge accumulation electrode (82). By doing so, the imaging device can capture low-sensitivity images and high-sensitivity images with the same number of pixels. Furthermore, if a filter that transmits infrared light is added to the imaging optical system (102), it becomes possible to generate infrared HDR images.

[0116] In addition, although the above-described embodiment describes a case where the first pixel array (11) is stacked on the second pixel array (12), the first pixel array (11) and the second pixel array (12) may be provided on the same plane. Even in this case, the imaging device can effectively utilize the information of the visible light image and appropriately reduce power consumption by performing control similar to the above-described control by the control unit (40, 40a).

[0117] [12. Effects]

[0118] The imaging device (1) has a semiconductor substrate (66), a first pixel array (11), a second pixel array (12), and a control unit (40). The first pixel array (11) is provided on the semiconductor substrate (66) and has a stacked structure in which a first electrode (77), a photoelectric conversion layer (79), and a second electrode (80) are stacked in sequence, and a first light receiving pixel (13) that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions. The second pixel array (12) is provided within the semiconductor substrate (66) at a position overlapping with the first light receiving pixel (13) in the thickness direction of the semiconductor substrate (66), and a second light receiving pixel (14) that photoelectrically converts light in a second wavelength region including an infrared light region is arranged in two dimensions. The control unit (40) controls the driving of the second pixel array (12) based on the signal photoelectrically converted by the first pixel array (11). By doing so, the imaging device (1) can effectively utilize information of the visible light image.

[0119] The imaging device (1) is equipped with a data processing unit (30) that detects a first pixel (13) that has a change from image data captured by a first pixel array (11). The control unit (40) outputs a signal that has been photoelectrically converted by a second light-receiving pixel (14) corresponding to the first pixel (13) that has a change detected by the data processing unit (30). Accordingly, the imaging device (1) outputs only to the second light-receiving pixel (14) corresponding to the ROI (Region Of Interest) area to be noted in the visible image, so the power consumption required for outputting information can be appropriately reduced.

[0120] The control unit (40) outputs a signal read from the second light-receiving pixel (14) corresponding to the first pixel (13) that has a change among all signals read from the second pixel array (12). By doing so, the imaging device (1) outputs only to the second light-receiving pixel (14) corresponding to the ROI area to be noted in the visible image, thereby appropriately reducing the power consumption required for outputting information.

[0121] The control unit (40) reads and outputs a signal converted by photoelectricity from a second light-receiving pixel (14) corresponding to a first pixel (13) that has a change among the signals converted by the second pixel array (12). By doing so, the imaging device (1) reads and outputs from the second pixel array (12) only for the second light-receiving pixel (14) corresponding to the ROI area to be noted in the visible image, thereby appropriately reducing the power consumption required for reading information.

[0122] The control unit (40) starts driving the second pixel array (12) when a first pixel (13) with a change is detected by the data processing unit (30). By doing so, the imaging device (1) does not drive the second pixel array (12) until a first pixel (13) with a change is detected, thereby reducing the power consumption of the second pixel array (12).

[0123] The control unit (40) thins some of the first light-receiving pixels (13) and outputs a signal converted by photoelectricity from the first pixel array (11). By doing so, the imaging device (1) can reduce the power consumption required for outputting the signal converted by photoelectricity by the first pixel array (11).

[0124] The imaging device (1) has a semiconductor substrate (66), a first pixel array (11), a second pixel array (12), and a control unit (40). The first pixel array (11) is provided on the semiconductor substrate (66) and has a stacked structure in which a first electrode (77), a photoelectric conversion layer (79), and a second electrode (80) are stacked in sequence, and a first light receiving pixel (13) that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions. The second pixel array (12) is provided within the semiconductor substrate (66) at a position overlapping with the first light receiving pixel (13) in the thickness direction of the semiconductor substrate (66), and a second light receiving pixel (14) that photoelectrically converts light in a first wavelength region transmitted through the first pixel array (11) has a light receiving sensitivity different from that of the first light receiving pixel (13) and is arranged in two dimensions. The control unit (40) drives and controls the second pixel array (12) based on the signal converted by the first pixel array (11). By doing so, the imaging device (1) can capture high-sensitivity images and low-sensitivity images using one pixel array (10).

[0125] The imaging device (1) has a semiconductor substrate (66), a first pixel array (11), a second pixel array (12), and a control unit (40). The first pixel array (11) is provided on the semiconductor substrate (66) and has a stacked structure in which a first electrode (77), a photoelectric conversion layer (79), and a second electrode (80) are stacked in sequence, and a first light receiving pixel (13) that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions. The second pixel array (12) is provided on the same plane as the first pixel array (11) and a second light receiving pixel (14) that photoelectrically converts light in a second wavelength region including an infrared light region is arranged in two dimensions. The control unit (40) drives and controls the second pixel array (12) based on a signal photoelectrically converted by the first pixel array (11). Accordingly, the imaging device (1) can effectively utilize information of a visible light image even when the first pixel array (11) and the second pixel array (12) are arranged on the same plane.

[0126] The distance measuring system (100a) includes a light source (101) and an imaging device (1a). The light source (101) emits infrared light. The imaging device (1a) captures an object irradiated with infrared light and measures the distance to the object based on the captured image. The imaging device (1a) has a semiconductor substrate (66), a first pixel array (11), a second pixel array (12), and a control unit (40a). The first pixel array (11) is provided on the semiconductor substrate (66) and has a stacked structure in which a first electrode (77), a photoelectric conversion layer (79), and a second electrode (80) are stacked in sequence, and a first light receiving pixel (13) that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions. The second pixel array (12) is provided in a position overlapping with the first light-receiving pixel (13) in the thickness direction of the semiconductor substrate (66) within the semiconductor substrate (66), and the second light-receiving pixel (14), which photoelectrically converts light in a second wavelength region including an infrared light region, is arranged in two dimensions. The control unit (40a) drives and controls the second pixel array (12) and the light source (101) based on the signal photoelectrically converted by the first pixel array (11), and measures the distance to the subject based on the signal photoelectrically converted by the second light-receiving pixel (14). By doing so, the distance measuring system (100a) can improve the measurement precision by appropriately driving and controlling the light source (101) by utilizing information from the visible light image.

[0127] Furthermore, the effects described in this specification are merely examples and are not limited thereto, and other effects may also be present.

[0128] In addition, the present technology may also take the following configuration.

[0129] (1)

[0130] semiconductor substrate and,

[0131] A first pixel array provided on the semiconductor substrate, having a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in sequence, and a first light-receiving pixel that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions, and

[0132] A second pixel array having a second light-receiving pixel arranged in two dimensions, which is provided at a position overlapping with the first light-receiving pixel in the thickness direction of the semiconductor substrate, and which photoelectrically converts light in a second wavelength region including an infrared light region;

[0133] A control unit that drives and controls the second pixel array based on a signal converted by the first pixel array.

[0134] Imaging device having

[0135] (2)

[0136] A data processing unit that detects the first light-receiving pixel having a change from the image data captured by the first pixel array.

[0137] Equipped with,

[0138] The above control unit is,

[0139] Outputting a signal converted by photoelectricity by the second light-receiving pixel corresponding to the first light-receiving pixel having the above change

[0140] The imaging device described in (1) above.

[0141] (3)

[0142] The above control unit is,

[0143] Among all signals read from the second pixel array, output the signal read from the second light-receiving pixel corresponding to the first light-receiving pixel having the change.

[0144] The imaging device described in (2) above.

[0145] (4)

[0146] Among the signals photoelectrically converted by the second pixel array, the signal photoelectrically converted from the second light-receiving pixel corresponding to the first light-receiving pixel having the change is read and output.

[0147] The imaging device described in (2) above.

[0148] (5)

[0149] The above control unit is,

[0150] When the first light-receiving pixel having the change is detected by the data processing unit, the operation of the second pixel array is started.

[0151] An imaging element described in any one of (2) to (4) above.

[0152] (6)

[0153] The above control unit is,

[0154] A portion of the first light-receiving pixels is thinned to output a photoelectrically converted signal from the first pixel array.

[0155] An imaging device described in any one of (1) to (5) above.

[0156] (7)

[0157] semiconductor substrate and,

[0158] A first pixel array provided on the semiconductor substrate, having a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in sequence, and a first light-receiving pixel that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions, and

[0159] A second pixel array in which a second light-receiving pixel is arranged in two dimensions, wherein the second light-receiving pixel has a light-receiving sensitivity different from that of the first light-receiving pixel and photoelectrically converts light in the first wavelength region transmitted through the first pixel array, and is provided in a position overlapping with the first light-receiving pixel in the thickness direction of the semiconductor substrate, and

[0160] A control unit that drives and controls the second pixel array based on a signal converted by the first pixel array.

[0161] Imaging device having

[0162] (8)

[0163] semiconductor substrate and,

[0164] A first pixel array provided on the semiconductor substrate, having a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in sequence, and a first light-receiving pixel that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions, and

[0165] A second pixel array arranged in two dimensions, wherein a second light-receiving pixel that photoelectrically converts light in a second wavelength region including an infrared light region is provided on the same plane as the first pixel array, and

[0166] A control unit that drives and controls the second pixel array based on a signal converted by the first pixel array.

[0167] Imaging device having

[0168] (9)

[0169] A light source emitting infrared light, and

[0170] An imaging device that captures a subject irradiated with the above-mentioned infrared light and measures the distance to the subject based on the captured image.

[0171] Includes,

[0172] The above imaging device is,

[0173] semiconductor substrate and,

[0174] A first pixel array provided on the semiconductor substrate, having a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in sequence, and a first light-receiving pixel that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions, and

[0175] A second pixel array having a second light-receiving pixel arranged in two dimensions, which is provided at a position overlapping with the first light-receiving pixel in the thickness direction of the semiconductor substrate, and which photoelectrically converts light in a second wavelength region including an infrared light region;

[0176] A control unit that drives and controls the second pixel array and the light source based on the signal converted by the first pixel array, and measures the distance to the subject based on the signal converted by the second light-receiving pixel.

[0177] A distance measuring system having Explanation of the symbols

[0178] 100, 100a: Range of view system 1, 1a: Imaging device 10: Pixel array 11: First pixel array 12: Second pixel array 13: 1st pixel 14: Second pixel 20: AD conversion unit 21: First readout circuit 22: 1st Data Processing Unit 23: Second readout circuit 24: 2nd Data Processing Unit 30: Data processing unit 40: Control unit 41: Global Control Circuit 42: 1st row control circuit 43: Second row control circuit 50: Pulse generator for distance measurement 63: Color Filter 65: On-chip lens 66: Semiconductor substrate 67: Photoelectric conversion region 75: Optical filter 77: First electrode 78: Semiconductor layer 79: Photoelectric conversion layer 80: Second electrode 81: Insulating film 82: Charge accumulation electrode 101: Light source 102: Imaging optical system 103: ISP 104: Input Devices 105: Display device 106: Data Preservation Department

Claims

Claim 1 An imaging device comprising: a semiconductor substrate; a first pixel array arranged in two dimensions having a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are sequentially stacked on the semiconductor substrate, wherein a first light-receiving pixel that photoelectrically converts light in a first wavelength region including a visible light region is arranged in two dimensions; a second pixel array arranged in two dimensions having a second light-receiving pixel that photoelectrically converts light in a second wavelength region including an infrared light region is arranged at a position overlapping with the first light-receiving pixel in the thickness direction of the semiconductor substrate within the semiconductor substrate; a control unit that drives and controls the second pixel array based on a signal photoelectrically converted by the first pixel array; and a data processing unit that detects the first light-receiving pixel that has a change from image data captured by the first pixel array, wherein the control unit outputs a signal photoelectrically converted by the second light-receiving pixel corresponding to the first light-receiving pixel that has a change detected by the data processing unit. Claim 2 delete Claim 3 In claim 1, the control unit outputs a signal read from the second light-receiving pixel corresponding to the first light-receiving pixel having the change among all signals read from the second pixel array, an imaging device. Claim 4 An imaging device according to claim 1, wherein the control unit reads and outputs a signal converted by photoelectricity from the second light-receiving pixel corresponding to the first light-receiving pixel having the change among the signals converted by the second pixel array. Claim 5 An imaging device according to claim 1, wherein the control unit initiates the operation of the second pixel array when the first light-receiving pixel having the change is detected by the data processing unit. Claim 6 In claim 1, the control unit outputs a signal converted by photoelectricity from the first pixel array by thinning some of the first light-receiving pixels. Claim 7 An imaging device comprising: a semiconductor substrate; a first pixel array arranged in two dimensions having a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in sequence on the semiconductor substrate, and which first light-receiving pixels that photoelectrically convert light in a first wavelength region including a visible light region are arranged in two dimensions; a second pixel array arranged in two dimensions having second light-receiving pixels that photoelectrically convert light in the first wavelength region transmitted through the first pixel array, which are arranged in a position overlapping with the first light-receiving pixels in the thickness direction of the semiconductor substrate within the semiconductor substrate, and which have a light-receiving sensitivity different from that of the first light-receiving pixels; and a control unit that drives and controls the second pixel array based on a signal photoelectrically converted by the first pixel array. Claim 8 An imaging device comprising: a semiconductor substrate; a first pixel array arranged in two dimensions having a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are sequentially stacked, and which first light-receiving pixels that photoelectrically convert light in a first wavelength region including a visible light region are arranged in two dimensions; a second pixel array arranged in two dimensions having second light-receiving pixels that photoelectrically convert light in a second wavelength region including an infrared light region are arranged in a plane coplanar with the first pixel array; and a control unit that drives and controls the second pixel array based on a signal photoelectrically converted by the first pixel array. Claim 9 The apparatus includes a light source emitting infrared light and an imaging device that captures a subject irradiated with the infrared light and measures the distance to the subject based on the captured image, wherein the imaging device comprises a semiconductor substrate and a first pixel array arranged in two dimensions, wherein the first receiving pixels that photoelectrically convert light in a first wavelength region including a visible light region are arranged in a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in sequence on the semiconductor substrate; a second pixel array arranged in two dimensions, wherein the second receiving pixels that photoelectrically convert light in a second wavelength region including an infrared light region are arranged in a position overlapping with the first receiving pixels in the thickness direction of the semiconductor substrate within the semiconductor substrate; a control unit that drives and controls the second pixel array and the light source based on the signal photoelectrically converted by the first pixel array and measures the distance to the subject based on the signal photoelectrically converted by the second receiving pixels; and the device wherein the image data captured by the first pixel array has a change A distance measuring system comprising a data processing unit for detecting a first light receiving pixel, and a control unit that outputs a signal converted by photoelectricity by a second light receiving pixel corresponding to the first light receiving pixel having the change detected by the data processing unit.

Images