Substrate processing device and substrate processing method

Abstract

A substrate processing device according to an embodiment comprises a substrate holding unit, a rotary driving unit, a cover body, a conveying mechanism, a cleaning liquid supply unit, and a control unit. The substrate holding unit holds a substrate. The rotary driving unit rotates the substrate holding unit. The cover body covers the upper surface of the substrate held by the substrate holding unit. The conveying mechanism conveys a cleaning jig to the substrate holding unit. The cleaning liquid supply unit supplies cleaning liquid toward the lower surface of the cleaning jig held by the substrate holding unit. The control unit rotates the substrate holding unit by controlling the rotary driving unit. At least one hole is formed in the cleaning jig to allow cleaning liquid discharged from the cleaning liquid supply unit to pass toward the cover body.

Description

Technology Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Patent document 1 discloses a substrate processing apparatus having a cover body that covers the upper part of a substrate. Prior art literature

[0003] Japanese Patent Publication No. 2018-003097 The problem to be solved

[0004] The present disclosure provides a technology for efficiently cleaning a cover body. means of solving the problem

[0005] A substrate processing apparatus according to one aspect of the present disclosure comprises a substrate holding unit, a rotary driving unit, a cover body, a conveying mechanism, a cleaning liquid supply unit, and a control unit. The substrate holding unit holds a substrate. The rotary driving unit rotates the substrate holding unit. The cover body covers the upper surface of the substrate held by the substrate holding unit. The conveying mechanism conveys a cleaning jig to the substrate holding unit. The cleaning liquid supply unit supplies a cleaning liquid toward the lower surface of the cleaning jig held by the substrate holding unit. The control unit rotates the substrate holding unit by controlling the rotary driving unit. At least one hole is formed in the cleaning jig to allow the cleaning liquid discharged from the cleaning liquid supply unit to pass toward the cover body. Effects of the invention

[0006] According to the present disclosure, the cover body can be efficiently cleaned. Brief explanation of the drawing

[0007] Figure 1 is a diagram showing the schematic configuration of a substrate processing system according to an embodiment. FIG. 2 is a schematic diagram showing the configuration of a processing unit according to an embodiment. FIG. 3 is a plan view showing the configuration of a cleaning jig according to an embodiment. FIG. 4 is a cross-sectional view of a cleaning jig according to an embodiment at IV-IV of FIG. 3. FIG. 5 is a cross-sectional view of the cleaning jig according to an embodiment at VV of FIG. 3. FIG. 6 is a cross-sectional view of a cleaning jig according to an embodiment at VI-VI of FIG. 3. FIG. 7 is a flowchart illustrating the plating process according to an embodiment. FIG. 8 is a flowchart illustrating the cleaning treatment of the heating part according to an embodiment. FIG. 9 is a plan view showing the configuration of a cleaning jig according to a modified example of an embodiment. FIG. 10 is a diagram showing a cross-section of a wing portion in a cleaning jig according to a modified example of an embodiment. FIG. 11 is a diagram showing a cross-section of the first wall portion of a cleaning jig according to a modified example of an embodiment. FIG. 12 is a diagram showing a cross-section of the second wall portion of a cleaning jig according to a modified example of an embodiment. Specific details for implementing the invention

[0008] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method disclosed herein will be described in detail with reference to the attached drawings. Furthermore, the substrate processing apparatus and substrate processing method disclosed herein are not limited by the embodiments shown below.

[0009] <Overall Composition>

[0010] FIG. 1 is a diagram showing the schematic configuration of a substrate processing device (1) according to an embodiment. In the following, to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the Z-axis forward direction is defined as the vertical upward direction. In addition, the X-axis direction is defined as the left-right direction.

[0011] As shown in FIG. 1, the substrate processing device (1) is equipped with an incoming / outgoing station (2) and a processing station (3). The incoming / outgoing station (2) and the processing station (3) are provided adjacent to each other.

[0012] The incoming / outgoing station (2) is equipped with a carrier placement section (11) and a return section (12). In the carrier placement section (11), a plurality of carriers (C) are arranged to receive a plurality of substrates, or in this embodiment, a semiconductor wafer (hereinafter wafer (W)) in a horizontal state.

[0013] The transport unit (12) is provided adjacent to the carrier placement unit (11) and is equipped with a substrate transport device (13) and a delivery unit (14) inside. The substrate transport device (13) is equipped with a wafer holding mechanism for holding a wafer (W). Additionally, the substrate transport device (13) is capable of movement in the horizontal and vertical directions and rotation around a vertical axis, and transports the wafer (W) between the carrier (C) and the delivery unit (14) using the wafer holding mechanism.

[0014] A processing station (3) is provided adjacent to a return section (12). The processing station (3) is equipped with a return section (15) and a plurality of processing units (16). The plurality of processing units (16) are arranged on both sides of the return section (15) in the Y-axis direction.

[0015] The transport unit (15) is equipped with a substrate transport device (17) inside. The substrate transport device (17) is equipped with a wafer holding mechanism for holding a wafer (W). Additionally, the substrate transport device (17) is capable of moving in the horizontal and vertical directions and rotating around a vertical axis, and transports the wafer (W) between the transfer unit (14) and the processing unit (16) using the wafer holding mechanism. The substrate transport device (17) includes an arm for holding the wafer (W), a motor for moving the arm, and a sensor for detecting the position of the arm. The substrate transport device (17) can transport a cleaning jig (40) described later. The substrate transport device (17) (an example of a transport mechanism) transports the wafer (W) or the cleaning jig (40) to the substrate holding unit (21) described later.

[0016] The processing unit (16) performs a predetermined wafer processing on a wafer (W) that is transported by a substrate transport device (17). Specifically, the processing unit (16) performs plating processing on the wafer (W). The processing unit (16) performs a predetermined heating part cleaning processing using a cleaning jig (40) that is transported by the substrate transport device (17).

[0017] Additionally, the substrate processing device (1) is equipped with a control device (4). The control device (4) is, for example, a computer and is equipped with a control unit (18) and a memory unit (19). A program for controlling various processes executed in the substrate processing device (1) is stored in the memory unit (19). The control unit (18) controls the operation of the substrate processing device (1) by reading and executing the program stored in the memory unit (19). For example, the control unit (18) rotates the substrate holding unit (21) by controlling the rotation drive unit (22) described later.

[0018] In addition, such a program may be recorded on a computer-readable storage medium and installed from the storage medium into the memory unit (19) of the control device (4). Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), a memory card, etc.

[0019] In the substrate processing device (1) configured as described above, first, the substrate transport device (13) of the incoming / outgoing station (2) extracts a wafer (W) from a carrier (C) placed in the carrier placement section (11) and places the extracted wafer (W) in the transfer section (14). The wafer (W) placed in the transfer section (14) is extracted from the transfer section (14) by the substrate transport device (17) of the processing station (3) and brought into the processing unit (16).

[0020] A wafer (W) brought into the processing unit (16) is processed by the processing unit (16), then removed from the processing unit (16) by the substrate transport device (17) and placed in the transfer unit (14). Then, the processed wafer (W) placed in the transfer unit (14) is returned to the carrier (C) of the carrier placement unit (11) by the substrate transport device (13).

[0021] Additionally, when the substrate processing device (1) performs plating treatment on a predetermined number of wafers (W), for example, it brings a cleaning jig (40) into the processing unit (16) and performs a heating unit cleaning treatment on the processing unit (16). When the heating unit cleaning treatment is completed, the substrate processing device (1) removes the cleaning jig (40) from the processing unit (16). When the heating unit cleaning treatment is not performed, the cleaning jig (40) is placed in a placement unit (14a) provided, for example, above or below the transfer unit (14).

[0022] <Composition of Processing Unit>

[0023] Next, the configuration of the processing unit (16) will be explained with reference to FIG. 2. FIG. 2 is a diagram showing the configuration of the processing unit (16) according to an embodiment. The processing unit (16) is a unit that performs plating treatment on a wafer (W). Specifically, the processing unit (16) is a unit that performs electroless plating treatment on a wafer (W).

[0024] The processing unit (16) comprises a chamber (20), a substrate holding unit (21), a rotary driving unit (22), a plating solution supply unit (23), a first cleaning solution supply unit (24), a rinse solution supply unit (25), a second cleaning solution supply unit (26), a heating unit (27), and a recovery cup (28).

[0025] The chamber (20) accommodates a substrate holding section (21), a heating section (27), and a recovery cup (28), etc. A Fan Filter Unit (FFU) (20a) is provided in the ceiling section of the chamber (20). The FFU (20a) forms a downflow within the chamber (20).

[0026] The substrate holding part (21) holds a wafer (W) (an example of a substrate). Specifically, the substrate holding part (21) supports the lower surface of the wafer (W) brought in by the substrate transport device (17) (see FIG. 1) and holds the wafer (W) horizontally. The substrate holding part (21) is a vacuum chuck type that vacuum adsorbs to the lower surface of the wafer (W). The substrate holding part (21) adsorbs the area near the center of the wafer (W). The substrate holding part (21) holds a cleaning jig (40) just like the wafer (W).

[0027] The substrate holding member (21) is mounted to the rotary driving member (22) via a rotary shaft (21a). The rotary driving member (22) is, for example, a motor. The rotary driving member (22) is driven, and the rotation generated by the rotary driving member (22) is transmitted to the substrate holding member (21) via the rotary shaft (21a), thereby causing the substrate holding member (21) to rotate. That is, the rotary driving member (22) rotates the substrate holding member (21). As the substrate holding member (21) rotates while holding the wafer (W), the wafer (W) rotates together with the substrate holding member (21). As the substrate holding member (21) rotates while holding the cleaning jig (40), the cleaning jig (40) rotates together with the substrate holding member (21). The rotational speed of the substrate holding part (21), that is, the rotational speed of the wafer (W), and the rotational speed of the cleaning jig (40) are adjusted by the rotational driving part (22).

[0028] In addition, the following description may be explained using a rotational coordinate system centered on the rotation axis of the substrate holding part (21). For example, the description may be explained by defining the diameter direction centered on the rotation axis of the substrate holding part (21).

[0029] Additionally, the substrate holding unit (21) can move along the vertical direction by means of a moving mechanism (not shown), such as a motor and a cylinder. Specifically, the substrate holding unit (21) moves along the vertical direction between the transfer position and the processing position. The transfer position is a position above the recovery cup (28) and is a position for transferring a wafer (W) or a cleaning jig (40) between the substrate transport device (17) and the substrate holding unit (21). The processing position is a position below the transfer position and is a position for performing plating treatment, etc., on the wafer (W) held by the substrate holding unit (21). Additionally, the processing position is a position for performing heating part cleaning treatment using the cleaning jig (40). Furthermore, the position for performing plating treatment, etc., on the wafer (W) and the position for performing heating part cleaning treatment using the cleaning jig (40) may be different positions.

[0030] The plating solution supply unit (23) supplies a plating solution (an example of a processing solution) to the upper surface of a wafer (W) held in the substrate holding unit (21). The plating solution supply unit (23) is equipped with a plating solution supply nozzle (23a) and a plating solution supply source (23b). The plating solution supply nozzle (23a) is held in a nozzle arm (30). The nozzle arm (30) is movable along the left-right direction (X-axis direction) and the up-down direction (Z-axis direction).

[0031] The nozzle arm (30) moves along the left-right and up-down directions by means of a moving mechanism (not shown), such as a motor and a cylinder. The nozzle arm (30) moves along the left-right direction between the first withdrawal position and the first rising position. The first withdrawal position is a position where the nozzle arm (30) is radially outward from the recovery cup (28) and does not hinder the up-down movement of the heating unit (27). The first rising position is a position above the wafer (W) held in the substrate holding unit (21) and is a position moved along the X-axis direction from the first withdrawal position.

[0032] Additionally, the nozzle arm (30) moves along the vertical direction between the first rising position and the first falling position. The first falling position is lower than the first rising position and is a position that is higher than the wafer (W) held by the substrate holding member (21).

[0033] The plating solution supply nozzle (23a) is connected to the plating solution supply source (23b) via the plating solution supply line (23c). The plating solution supply nozzle (23a) receives a plating solution heated to a predetermined temperature from the plating solution supply source (23b) and discharges the plating solution onto the wafer (W). As a result, the plating solution accumulates on the upper surface of the wafer (W).

[0034] The plating solution is a plating solution for electroless plating. The plating solution contains metal ions such as, for example, cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, and gold (Au) ions, as well as reducing agents such as hypophosphorous acid and dimethylamine borane. The plating solution may also contain additives. Examples of plating films formed by plating treatment using the plating solution include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, etc.

[0035] The first cleaning liquid supply unit (24) is equipped with a first cleaning liquid supply nozzle (24a) and a first cleaning liquid supply source (24b). The first cleaning liquid supply nozzle (24a) is maintained in a nozzle arm (30).

[0036] The first cleaning solution supply nozzle (24a) is connected to the first cleaning solution supply source (24b) via the first cleaning solution supply line (24c). The first cleaning solution supply nozzle (24a) receives the first cleaning solution from the first cleaning solution supply source (24b) and discharges the first cleaning solution onto the upper surface of the wafer (W). The first cleaning solution is, for example, an organic acid such as formic acid, malic acid, succinic acid, or citric acid, or hydrogen fluoride (DHF) diluted to a concentration that does not corrode the plated surface of the wafer (W).

[0037] The rinse liquid supply unit (25) is equipped with a rinse liquid supply nozzle (25a) and a rinse liquid supply source (25b). The rinse liquid supply nozzle (25a) is maintained in a nozzle arm (30).

[0038] The rinse liquid supply nozzle (25a) is connected to the rinse liquid source (25b) via the rinse liquid supply line (25c). The rinse liquid supply nozzle (25a) receives rinse liquid from the rinse liquid source (25b) and discharges the rinse liquid onto the wafer (W). The rinse liquid is, for example, pure water.

[0039] The second cleaning solution supply unit (26) supplies a second cleaning solution (an example of a cleaning solution) toward the lower surface of a wafer (W) (an example of a substrate) held in the substrate holding unit (21). The second cleaning solution supply unit (26) (an example of a cleaning solution supply unit) supplies a second cleaning solution (an example of a cleaning solution) toward the lower surface of a cleaning jig (40) held in the substrate holding unit (21). The second cleaning solution is, for example, a rinse solution and is pure water. Hereinafter, the second cleaning solution will be described as a rinse solution.

[0040] The second cleaning fluid supply unit (26) is equipped with a second cleaning fluid supply nozzle (26a) and a second cleaning fluid supply source (26b). The second cleaning fluid supply nozzle (26a) is maintained by a nozzle holding unit (not shown). The second cleaning fluid supply nozzle (26a) is connected to the second cleaning fluid supply source (26b) via a second cleaning fluid supply line (26c).

[0041] The second cleaning liquid supply nozzle (26a) receives rinse liquid from the second cleaning liquid source (26b) and discharges the second cleaning liquid onto the lower surface of the wafer (W) or the lower surface of the cleaning jig (40). The second cleaning liquid supply nozzle (26a) is configured to discharge rinse liquid obliquely upward from the inner side in the radial direction to the outer side in the radial direction. Additionally, the second cleaning liquid supply nozzle (26a) may receive rinse liquid from the rinse liquid source (25b).

[0042] The heating unit (27) is plate-shaped and formed in a circular shape. The heating unit (27) is equipped with a heater (27a) inside. The heating unit (27) (an example of a cover body) is provided to cover the upper surface of a wafer (W) (an example of a substrate) held by the substrate holding unit (21) or a cleaning jig (40) held by the substrate holding unit (21) at the heating position described later. The heating unit (27) heats the wafer (W) supplied with plating solution from the upper side. The heating unit (27) heats the plating solution accumulated on the wafer (W) to form a plating film on the upper surface of the wafer (W). The diameter of the heating unit (27) is larger than the diameter of the wafer (W). Also, the diameter of the heating unit (27) is smaller than the opening diameter of the recovery cup (28). Additionally, the heating unit (27) may be in a circular shape.

[0043] The heating unit (27) is mounted on the support unit (32) via an arm (31). The arm (31) can rotate around the support unit (32) by means of a moving mechanism (not shown), such as a motor and a cylinder, and can also move along the up and down direction.

[0044] For example, when rotation generated by a rotation motor (not shown) is transmitted to the arm (31), the heating unit (27) rotates together with the arm (31). The heating unit (27) rotates between a second retracted position and a second raised position. The second retracted position is a position that is radially outward from the recovery cup (28) and is a position where the wafer (W) can be transferred between the substrate transport device (17) (see FIG. 1) and the substrate holding unit (21). The second raised position is a position that covers the upper part of the wafer (W), and, for example, is a position where the heating unit (27) is approximately on the same axis as the substrate holding unit (21). In FIG. 2, the heating unit (27) and the arm (31) in the second raised position are shown by solid lines.

[0045] Additionally, the heating unit (27) moves along the vertical direction between the second rising position and the heating position. The heating position is lower than the second rising position and is a position that does not come into contact with the plating solution accumulated on the wafer (W). The heating position is a position that heats the wafer (W) on which the plating solution has accumulated. In FIG. 2, the heating unit (27) and the arm (31) at the heating position are shown as dashed lines.

[0046] The recovery cup (28) is provided radially outward from the substrate holding part (21) and is provided around the substrate holding part (21). The recovery cup (28) receives liquid scattered from the wafer (W), for example, plating liquid. The recovery cup (28) receives rinse liquid scattered from the cleaning jig (40). The liquid recovered by the recovery cup (28) is discharged to the outside through the drain line (28a). Additionally, the drain line (28a) has multiple paths, and the path is switched depending on the liquid being recovered. The recovery cup (28) is open at the top so that the wafer (W), the substrate holding part (21) holding the cleaning jig (40), and the heating part (27) can move along the up and down direction.

[0047] Cleaning Jig

[0048] Next, the configuration of the cleaning jig (40) will be explained with reference to FIGS. 3 to 6. FIG. 3 is a plan view showing the configuration of the cleaning jig (40) according to an embodiment. FIG. 4 is a cross-sectional view of the cleaning jig (40) according to an embodiment at IV-IV of FIG. 3. FIG. 5 is a cross-sectional view of the cleaning jig (40) according to an embodiment at VV of FIG. 3. FIG. 6 is a cross-sectional view of the cleaning jig (40) according to an embodiment at VI-VI of FIG. 3.

[0049] The cleaning jig (40) has a plate portion (41), at least one wall portion (42), and at least one wing portion (43).

[0050] The plate portion (41) has the same external shape as the wafer (W) and, for example, is circular. For example, the diameter of the plate portion (41) is the same as the diameter of the wafer (W). At least one hole (44) is formed in the plate portion (41) which is held in the substrate holding portion (21). The hole (44) is provided to allow a rinse liquid (an example of a cleaning liquid) discharged from the second cleaning liquid supply portion (26) (an example of a cleaning liquid supply portion) to pass toward the heating portion (27) (an example of a cover body). The hole (44) is formed in a circular shape, for example.

[0051] A plurality of holes (44) are formed in the plate portion (41). Specifically, four holes (44) are formed in the plate portion (41). The four holes (44) are formed at equal intervals along the circumferential direction of the plate portion (41), for example. That is, the four holes (44) are formed at 90-degree intervals along the circumferential direction of the plate portion (41). In addition, the number of holes (44) is not limited to this, and may be one, two, or three. The number of holes (44) may be five or more.

[0052] The wall portion (42) is formed so that the rinse liquid (an example of a cleaning liquid) discharged from the second cleaning liquid supply portion (26) and passing through the hole (44) collides with it. Specifically, the wall portion (42) is formed to extend from the plate portion (41), which is radially outward from the hole (44), toward the heating portion (27) (an example of a cover body). For example, the wall portion (42) is formed to be orthogonal to the plate portion (41). Multiple wall portions (42) are provided. For example, two wall portions (42) are provided. The wall portion (42) is provided near the hole (44) facing the center of the plate portion (41). Furthermore, the number of wall portions (42) is not limited to this, and may be one or three or more.

[0053] In the following, among the plurality of holes (44) formed in the plate portion (41), the hole (44) in which a wall portion (42) is formed near the hole (44) is referred to as the ‘first hole (44a)’, and the hole (44) in which a wall portion (42) is not formed near the hole (44) is referred to as the ‘second hole (44b)’.

[0054] The wing portion (43) generates a swirling flow above the cleaning jig (40) as the cleaning jig (40) rotates within the chamber (20). The wing portion (43) is formed to extend from the plate portion (41) toward the heating portion (27) (an example of a cover body). The wing portion (43) is provided to extend along the diameter direction of the plate portion (41). The wing portion (43) is formed to extend obliquely upward from the plate portion (41) between two holes (44). The wing portion (43) has an inclined surface (45) that is inclined with respect to the plate portion (41). The inclined surface (45) is formed on the upstream side in the rotation direction of the cleaning jig (40). For example, a plurality of wing portions (43) are provided. For example, four wing portions (43) are provided. In addition, the number of wing portions (43) is not limited to this, and may be 1, 2, or 3. The number of wing portions (43) may be 5 or more.

[0055] <Plating Treatment>

[0056] Next, the plating treatment according to an embodiment will be described with reference to FIG. 7. FIG. 7 is a flowchart illustrating the plating treatment according to an embodiment.

[0057] The substrate processing device (1) performs an intake process (S10). Specifically, the substrate processing device (1) brings a wafer (W) into the chamber (20) by means of a substrate transport device (17) and holds the wafer (W) by means of a substrate holding part (21). The substrate holding part (21) adsorbs the lower surface of the wafer (W) and holds the wafer (W) horizontally.

[0058] The substrate processing device (1) performs a cleaning process (S11). Specifically, the substrate processing device (1) rotates the substrate holding part (21) to rotate the wafer (W) and discharges a cleaning solution from the first cleaning solution supply nozzle (24a) to clean the wafer (W). In addition, the rotation speed of the wafer (W) in the cleaning process and in each process described below is adjusted for each process. The rotation speed of the wafer (W) in each process may be changed during the process.

[0059] The substrate processing device (1) performs a first rinse treatment (S12). Specifically, the substrate processing device (1) rotates the wafer (W) and discharges rinse liquid from the rinse liquid supply nozzle (25a) to wash away the cleaning liquid remaining on the wafer (W). Additionally, the substrate processing device (1) discharges rinse liquid from the second cleaning liquid supply nozzle (26a) to clean the lower surface of the wafer (W).

[0060] The substrate processing device (1) performs a plating process (S13). Specifically, the substrate processing device (1) supplies a plating solution from a plating solution supply nozzle (23a) while rotating the wafer (W). As a result, the plating solution accumulates on the wafer (W).

[0061] After the plating solution accumulates on the wafer (W), the substrate processing device (1) lowers the heating unit (27) to a heating position to heat the plating solution accumulated on the wafer (W). Additionally, the substrate processing device (1) may heat the plating solution by changing the heating position of the heating unit (27). Additionally, the substrate processing device (1) may provide an inert gas supply unit (not shown) and, after discharging inert gas into the chamber (20) by the inert gas supply unit, heat the plating solution by the heating unit (27). Additionally, the substrate processing device (1) may stop the rotation of the wafer (W) and heat the plating solution.

[0062] The substrate processing device (1) performs a second rinse treatment (S14). Specifically, the substrate processing device (1) moves the heating unit (27) to a retractable position, and then, while rotating the wafer (W), discharges rinse liquid from the rinse liquid supply nozzle (25a) and the second cleaning liquid supply nozzle (26a) to clean the wafer (W) with the rinse liquid.

[0063] The substrate processing device (1) performs a drying process (S15). Specifically, the substrate processing device (1) increases the rotation speed of the wafer (W) to shake off the rinse liquid remaining on the wafer (W) and dries the wafer (W).

[0064] The substrate processing device (1) performs a removal process (S16). Specifically, the substrate processing device (1) stops the rotation of the wafer (W) and removes the wafer (W) from the chamber (20) by means of the substrate transport device (17).

[0065] By performing the plating treatment described above, vapor or mist of the plating solution adheres to the heating part (27). Therefore, the substrate treatment device (1) according to the embodiment performs the heating part cleaning treatment described below.

[0066] <Heating Unit Cleaning Treatment>

[0067] Next, the heating unit cleaning process according to an embodiment will be explained with reference to FIG. 8. FIG. 8 is a flowchart illustrating the heating unit cleaning process according to an embodiment. The heating unit cleaning process is performed, for example, after plating a predetermined number of wafers (W). The heating unit cleaning process may also be performed, for example, after the accumulated time of the plating process has reached a predetermined time. In addition, the heating unit cleaning process may be performed at any timing by operation of an operator, for example, by operation of a cleaning operation button in maintenance mode.

[0068] The substrate processing device (1) performs an intake process (S20). Specifically, the substrate processing device (1) brings a cleaning jig (40) into the chamber (20) by means of a substrate transport device (17) and holds the cleaning jig (40) by means of a substrate holding part (21). The substrate holding part (21) adsorbs the lower surface of the plate part (41) of the cleaning jig (40) and holds the cleaning jig (40) horizontally.

[0069] The substrate processing device (1) performs a cleaning process (S21). Specifically, the substrate processing device (1) lowers the heating unit (27) to a heating position and discharges a rinse liquid from the second cleaning liquid supply nozzle (26a) while rotating the cleaning jig (40). The rinse liquid discharged from the second cleaning liquid supply nozzle (26a) passes through the hole (44) of the cleaning jig (40) and is supplied above the plate portion (41) of the cleaning jig (40). Additionally, the substrate processing device (1) may change the position of the heating unit (27) relative to the heating position. Additionally, the substrate processing device (1) may discharge a rinse liquid from the second cleaning liquid supply nozzle (26a) while changing the position of the heating unit (27).

[0070] The rinse liquid passing through the first hole (44a) of the cleaning jig (40) collides with the wall portion (42), as indicated by the dashed arrow in FIG. 4, and is supplied toward the inner side in the radial direction. The rinse liquid supplied toward the inner side in the radial direction collides with the center side of the heating portion (27) and spreads. As a result, the heating portion (27) in the inner side in the radial direction is cleaned by the rinse liquid.

[0071] The rinse liquid passing through the second hole (44b) of the cleaning jig (40) is supplied outward in the radial direction, as indicated by the dashed arrow in FIG. 5. The rinse liquid supplied outward in the radial direction collides with the outer circumference of the heating part (27) and spreads. As a result, the heating part (27) outward in the radial direction is cleaned by the rinse liquid. In this way, the rinse liquid is supplied to a wide area of ​​the heating part (27) in the radial direction and cleans a wide area of ​​the heating part (27).

[0072] As the cleaning jig (40) rotates, the rinse liquid that comes into contact with the wing portion (43) spreads over a wide area of ​​the heating portion (27). Because of this, the rinse liquid is supplied to a wide area of ​​the heating portion (27) in the diameter direction, and cleans a wide area of ​​the heating portion (27).

[0073] In addition, as the cleaning jig (40) rotates, a swirling flow is formed by the wing portion (43), and the mist of the rinse liquid is diffused. Because of this, the rinse liquid cleans a wide area of ​​the heating portion (27).

[0074] Returning to FIG. 8, the substrate processing device (1) performs a drying process (S22). Specifically, the substrate processing device (1) stops the discharge of rinse liquid through the second cleaning liquid supply nozzle (26a) and rotates the cleaning jig (40). For example, the substrate processing device (1) increases the rotational speed of the cleaning jig (40) to be greater than the rotational speed during the cleaning process. As the cleaning jig (40) rotates, a swirling flow is generated by the wing portion (43), drying the heating portion (27) and the inside of the chamber (20).

[0075] The substrate processing device (1) performs a removal process (S23). Specifically, the substrate processing device (1) stops the rotation of the cleaning jig (40) and removes the cleaning jig (40) from the chamber (20) by means of the substrate transport device (17).

[0076] <Effect>

[0077] A substrate processing device (1) comprises a substrate holding unit (21), a rotary driving unit (22), a heating unit (27) (an example of a cover body), a substrate transport device (17) (an example of a transport mechanism), a second cleaning liquid supply unit (26) (an example of a cleaning liquid supply unit), and a control unit (18). The substrate holding unit (21) holds a wafer (W) (an example of a substrate). The rotary driving unit (22) rotates the substrate holding unit (21). The heating unit (27) covers the upper surface of the wafer (W) held by the substrate holding unit (21). The substrate transport device (17) transports a cleaning jig (40) to the substrate holding unit (21). The second cleaning liquid supply unit (26) supplies a rinse liquid (an example of a cleaning liquid) toward the lower surface of the cleaning jig (40) held by the substrate holding unit (21). The control unit (18) rotates the substrate holding unit (21) by controlling the rotational driving unit (22). At least one hole (44) is formed in the cleaning jig (40) to allow the rinse liquid discharged from the second cleaning liquid supply unit (26) to pass toward the heating unit (27).

[0078] Accordingly, the substrate processing device (1) can efficiently clean the heating part (27) with the rinse liquid by making the rinse liquid passing through the hole (44) come into contact with the lower surface of the heating part (27). For example, the substrate processing device (1) can efficiently clean the lower surface of the heating part (27) with the rinse liquid.

[0079] Additionally, the substrate processing device (1) cleans the heating unit (27) by supplying a rinse liquid while maintaining the cleaning jig (40) in the substrate holding unit (21). If the rinse liquid or the like adheres to the adsorption surface of the vacuum chuck of the substrate holding unit (21), for example, the holding force of the wafer (W) in the substrate holding unit (21), there is a risk that the holding force of the wafer (W) in the substrate holding unit (21) will decrease. When the substrate processing device (1) cleans the heating unit (27) with the rinse liquid, it prevents the rinse liquid from adhering to the adsorption surface of the substrate holding unit (21), thereby preventing the decrease in the holding force of the wafer (W) in the substrate holding unit (21).

[0080] The cleaning jig (40) comprises a plate portion (41) and at least one wall portion (42). The plate portion (41) is held in the substrate holding portion (21). The wall portion (42) extends from the plate portion (41) toward the heating portion (27). The wall portion (42) is formed so that the rinse liquid passing through the hole (44) collides with it.

[0081] Accordingly, the substrate processing device (1) can spread the rinse liquid over a wide area of ​​the heating section (27) by causing the rinse liquid to collide with the wall section (42). Because of this, the substrate processing device (1) can efficiently clean the heating section (27).

[0082] The wall portion (42) is formed to be orthogonal to the plate portion (41).

[0083] Accordingly, the substrate processing device (1) can supply rinse liquid to the heating part (27) on the radial center side, thereby cleaning the heating part (27) on the radial center side. Because of this, the substrate processing device (1) can efficiently clean the heating part (27).

[0084] The cleaning jig (40) has a plate portion (41) and at least one wing portion (43). The wing portion (43) extends from the plate portion (41) toward the heating portion (27).

[0085] Accordingly, the substrate processing device (1) can spread the rinse liquid that collides with the wing portion (43). The substrate processing device (1) can spread the rinse liquid by generating a swirling flow by the wing portion (43). Because of this, the substrate processing device (1) can supply rinse liquid to a wide area of ​​the heating portion (27), thereby efficiently cleaning the heating portion (27). In addition, after stopping the supply of rinse liquid, the substrate processing device (1) can generate a swirling flow by the wing portion (43) by rotating the cleaning jig (40), and dry the inside of the chamber (20) early by the swirling flow.

[0086] The substrate processing device (1) is equipped with a plating solution supply unit (23). The plating solution supply unit (23) supplies a plating solution to the upper surface of a wafer (W) held in a substrate holding unit (21). The second cleaning solution supply unit (26) supplies a rinse solution toward the lower surface of the wafer (W) held in the substrate holding unit (21).

[0087] Accordingly, the substrate processing device (1) can clean the heating unit (27) using a second cleaning liquid supply unit (26) that cleans the lower surface of the wafer (W). That is, the substrate processing device (1) can clean the heating unit (27) using an existing device without separately providing a rinse liquid supply unit for cleaning the lower surface of the heating unit (27).

[0088] <Variation Example>

[0089] The hole (51) of the cleaning jig (50) according to the modified example may be formed along the circumferential direction of the cleaning jig (50), specifically the circumferential direction of the plate portion (41), as shown in FIG. 9, for example. FIG. 9 is a plan view showing the configuration of the cleaning jig (50) according to the modified example of the embodiment. Accordingly, the substrate processing device (1) according to the modified example can increase the flow rate of the rinse liquid passing through the hole (51), thereby improving the cleaning efficiency of the heating portion (27).

[0090] The wing portion (61) of the cleaning jig (60) according to the modified example may have a first inclined surface (62) and a second inclined surface (63), for example, as shown in FIG. 10. FIG. 10 is a cross-sectional view of the wing portion (61) in the cleaning jig (60) according to the modified example of the embodiment. The first inclined surface (62) has a first angle (θ1) with respect to the plate portion (41). The second inclined surface (63) has a second angle (θ2) with respect to the plate portion (41). The second angle (θ2) is greater than the first angle (θ1).

[0091] The rotation drive unit (22) of the substrate processing device (1) according to the modified example can rotate the substrate holding unit (21) in a first rotation direction and in a second rotation direction opposite to the first rotation direction. That is, the substrate processing device (1) according to the modified example can rotate the cleaning jig (60) in forward and reverse directions. When the cleaning jig (60) rotates in the first rotation direction, the first inclined surface (62) is located upstream of the second inclined surface (63) in the rotation direction. When the cleaning jig (60) rotates in the second rotation direction, the second inclined surface (63) is located upstream of the first inclined surface (62) in the rotation direction.

[0092] A substrate processing device (1) according to a modified example rotates the substrate holding part (21) in a first rotational direction during the cleaning process in the heating part cleaning process. A substrate processing device (1) according to a modified example diffuses the rinse liquid by the swirling flow formed by the first inclined surface (62). Additionally, a substrate processing device (1) according to a modified example diffuses the rinse liquid colliding with the first inclined surface (62). A substrate processing device (1) according to a modified example can diffuse the rinse liquid upward by the first inclined surface (62), thereby enabling efficient cleaning of the heating part (27) by the rinse liquid.

[0093] A substrate processing device (1) according to a modified example rotates the substrate holding part (21) in a second rotational direction during the drying process in the heating part cleaning process. A substrate processing device (1) according to a modified example generates a swirling flow by the second inclined surface (63). A substrate processing device (1) according to a modified example can generate a swirling flow with a greater flow velocity than the swirling flow generated by the rotation in the first rotational direction by the second inclined surface (63), thereby enabling efficient drying of the chamber (20).

[0094] In the substrate processing device (1) according to the modified example, the nozzle that supplies rinse liquid to the lower surface of the wafer (W) during the plating process and the nozzle that supplies rinse liquid during the heating part cleaning process may be different nozzles. For example, the nozzle that supplies rinse liquid to the lower surface of the wafer (W) during the plating process and the nozzle that supplies rinse liquid during the heating part cleaning process have different discharge angles for discharging rinse liquid. Accordingly, the substrate processing device (1) according to the modified example can discharge rinse liquid at an appropriate discharge angle for each process.

[0095] The wall portion (71) of the cleaning jig (70) according to the modified example is formed to be inclined with respect to the plate portion (41). The wall portion (71) includes at least one of the first wall portion (72) shown in FIG. 11 and the second wall portion (73) shown in FIG. 12. FIG. 11 is a cross-sectional view of the first wall portion (72) of the cleaning jig (70) according to the modified example of the embodiment. FIG. 12 is a cross-sectional view of the second wall portion (73) of the cleaning jig (70) according to the modified example of the embodiment. FIG. 11 and FIG. 12 are cross-sectional views at a position corresponding to IV-IV of FIG. 3. The first wall portion (72) is formed such that its upper end faces inward in the diameter direction of the cleaning jig (70). The second wall portion (73) is formed such that its upper end faces outward in the diameter direction of the cleaning jig (70).

[0096] Additionally, the wall portion (71) may include a first wall portion (72) and a second wall portion (73). The wall portion (71) may include two or more of the wall portion (42) (see FIG. 4) that is perpendicular to the plate portion (41), the first wall portion (72), and the second wall portion (73).

[0097] A substrate processing device (1) according to a modified example can spread the rinse liquid over a wide area by means of at least one of the first wall portion (72) and the second wall portion (73), thereby efficiently cleaning the heating portion (27).

[0098] The substrate processing device (1) according to the modified example may perform liquid accumulation of the plating solution and heating of the plating solution by means of different chambers. In addition, the substrate processing device (1) according to the modified example is not limited to a device that performs plating treatment, but may be a device that supplies various processing solutions to a wafer (W) to perform treatment.

[0099] The above-described embodiments and variations may be applied in combination. For example, the cleaning jig (40) may have a hole (51) formed in the circumferential direction of the cleaning jig (40), and the wing portion (43) may have a first inclined surface (62) and a second inclined surface (63). For example, the cleaning jig (40) may have a hole (51) formed in the circumferential direction of the cleaning jig (40), and the wall portion (42) may include at least one of a first wall portion (72) and a second wall portion (73).

[0100] Furthermore, the embodiments disclosed herein should not be considered as being limited to examples in all respects. Indeed, the above-described embodiments may be implemented in various forms. Additionally, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and intent of the appended claims. Explanation of the symbols delete

Claims

Claim 1 A substrate processing device comprising: a substrate holding part for holding a substrate; a rotary driving part for rotating the substrate holding part; a cover body for covering the upper surface of the substrate held by the substrate holding part; a conveying mechanism for conveying a cleaning jig to the substrate holding part; a cleaning liquid supply part for supplying a cleaning liquid toward the lower surface of the cleaning jig held by the substrate holding part; and a control part for rotating the substrate holding part by controlling the rotary driving part, wherein at least one hole is formed in the cleaning jig to allow the cleaning liquid discharged from the cleaning liquid supply part to pass toward the cover body, and the hole is formed along the circumferential direction of the cleaning jig. Claim 2 A substrate processing device comprising: a substrate holding part for holding a substrate; a rotary driving part for rotating the substrate holding part; a cover body for covering the upper surface of the substrate held by the substrate holding part; a conveying mechanism for conveying a cleaning jig to the substrate holding part; a cleaning liquid supply part for supplying a cleaning liquid toward the lower surface of the cleaning jig held by the substrate holding part; and a control part for rotating the substrate holding part by controlling the rotary driving part. The cleaning jig has at least one hole formed therein for passing the cleaning liquid discharged from the cleaning liquid supply part toward the cover body. The cleaning jig has a plate part held by the substrate holding part and at least one wall part extending from the plate part toward the cover body. The wall part is formed so that the cleaning liquid passing through the hole collides with it, and the wall part is formed to be orthogonal to the plate part. Claim 3 A substrate processing device comprising: a substrate holding part for holding a substrate; a rotary driving part for rotating the substrate holding part; a cover body for covering the upper surface of the substrate held by the substrate holding part; a conveying mechanism for conveying a cleaning jig to the substrate holding part; a cleaning liquid supply part for supplying a cleaning liquid toward the lower surface of the cleaning jig held by the substrate holding part; and a control part for rotating the substrate holding part by controlling the rotary driving part. The cleaning jig has at least one hole formed therein for passing the cleaning liquid discharged from the cleaning liquid supply part toward the cover body. The cleaning jig has a plate part held by the substrate holding part and at least one wall part extending from the plate part toward the cover body. The wall part is formed so that the cleaning liquid passing through the hole collides with it, and the wall part is formed to be inclined with respect to the plate part. Claim 4 A substrate holding member for holding a substrate, a rotary driving member for rotating the substrate holding member, a cover body for covering the upper surface of the substrate held by the substrate holding member, a conveying mechanism for conveying a cleaning jig to the substrate holding member, a cleaning liquid supply member for supplying a cleaning liquid toward the lower surface of the cleaning jig held by the substrate holding member, and a control member for rotating the substrate holding member by controlling the rotary driving member; the cleaning jig has at least one hole formed therein for passing the cleaning liquid discharged from the cleaning liquid supply member toward the cover body; the cleaning jig has a plate part held by the substrate holding member and at least one wing part extending from the plate part toward the cover body; the rotary driving member is capable of rotating the substrate holding member in a first rotation direction and a second rotation direction opposite to the first rotation direction; and the wing part has a first inclined surface having a first angle with respect to the plate part and a second inclined surface having a second angle greater than the first angle with respect to the plate part. A substrate processing apparatus having, wherein when the cleaning jig rotates in the first rotational direction, the first inclined surface is located upstream in the rotational direction compared to the second inclined surface, and when the cleaning jig rotates in the second rotational direction, the second inclined surface is located upstream in the rotational direction compared to the first inclined surface. Claim 5 A substrate processing apparatus according to claim 3, wherein the wall portion comprises at least one of a first wall portion formed such that its upper end faces inward in the diameter direction of the cleaning jig, and a second wall portion formed such that its upper end faces outward in the diameter direction of the cleaning jig. Claim 6 A substrate processing apparatus according to any one of claims 1 to 5, comprising a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate maintained by the substrate holding unit, and wherein the cleaning liquid supply unit supplies a cleaning liquid toward the lower surface of the substrate maintained by the substrate holding unit. Claim 7 A substrate processing method comprising a substrate holding part capable of holding a substrate, a conveying process for conveying a cleaning jig, a rotating process for rotating the substrate holding part holding the cleaning jig, and a discharge process for discharging a cleaning liquid toward the lower surface of the cleaning jig held in the substrate holding part, wherein at least one hole is formed in the cleaning jig to allow the cleaning liquid discharged from a cleaning liquid supply part to pass toward a cover body covering the upper surface of the cleaning jig, and the hole is formed along the circumferential direction of the cleaning jig. Claim 8 A substrate processing method comprising: a substrate holding part capable of holding a substrate; a conveying process for conveying a cleaning jig; a rotating process for rotating the substrate holding part holding the cleaning jig; and a discharge process for discharging a cleaning liquid toward the lower surface of the cleaning jig held in the substrate holding part; wherein the cleaning jig has at least one hole formed therein for passing the cleaning liquid discharged from a cleaning liquid supply part toward a cover body covering the upper surface of the cleaning jig; wherein the cleaning jig has a plate part held in the substrate holding part and at least one wall part extending from the plate part toward the cover body; wherein the wall part is formed such that the cleaning liquid passing through the hole collides with it, and the wall part is formed to be orthogonal to the plate part. Claim 9 A substrate processing method comprising: a substrate holding part capable of holding a substrate; a conveying process for conveying a cleaning jig; a rotating process for rotating the substrate holding part holding the cleaning jig; and a discharge process for discharging a cleaning liquid toward the lower surface of the cleaning jig held in the substrate holding part; wherein the cleaning jig has at least one hole formed therein for passing the cleaning liquid discharged from a cleaning liquid supply part toward a cover body covering the upper surface of the cleaning jig; wherein the cleaning jig has a plate part held in the substrate holding part and at least one wall part extending from the plate part toward the cover body; wherein the wall part is formed so that the cleaning liquid passing through the hole collides with it, and the wall part is formed to be inclined with respect to the plate part. Claim 10 A substrate holding member capable of holding a substrate, a conveying process for conveying a cleaning jig, a rotation process for rotating the substrate holding member holding the cleaning jig, and a discharge process for discharging a cleaning liquid toward the lower surface of the cleaning jig held by the substrate holding member; the cleaning jig has at least one hole formed therein for passing the cleaning liquid discharged from a cleaning liquid supply member toward a cover body covering the upper surface of the cleaning jig; the cleaning jig has a plate portion held by the substrate holding member and at least one wing portion extending from the plate portion toward the cover body; the substrate holding member is rotatable in a first rotation direction and a second rotation direction opposite to the first rotation direction; the wing portion has a first inclined surface having a first angle with respect to the plate portion and a second inclined surface having a second angle greater than the first angle with respect to the plate portion; and when the cleaning jig rotates in the first rotation direction, the first inclined surface is the A substrate processing method in which the second inclined surface is located upstream in the direction of rotation compared to the first inclined surface, and when the cleaning jig rotates in the second direction of rotation, the second inclined surface is located upstream in the direction of rotation compared to the first inclined surface.

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