Deposition mask, method of manufacturing the same, and method of manufacturing display panel

Abstract

A deposition mask according to one embodiment of the present invention comprises a metal, a plurality of through-holes defined, and a mask body having a thickness of 50 micrometers or more and 200 micrometers or less, wherein each of the plurality of through-holes includes a first through-hole and a second through-hole defined along the thickness direction of the mask body, and the mask body includes a first part in which the first through-hole is defined, and a second part in which the width of the second through-hole is defined having a width smaller than the width of the first through-hole and the width increases as it goes down along the thickness direction of the mask body, thereby reducing the time and cost of the manufacturing process of the deposition mask, while preventing defects from occurring in a display panel formed using the deposition mask.

Description

Technology Field

[0001] The present invention relates to a deposition mask, a method for manufacturing the same, and a method for manufacturing a display panel. More specifically, it relates to a deposition mask with improved process yield and deposition precision, a method for manufacturing the same, and a method for manufacturing a display panel. Background Technology

[0002] A display panel includes a plurality of pixels. Each pixel includes a driving element, such as a transistor, and a display element, such as an organic light-emitting diode. The display element may be formed by stacking electrodes and a plurality of organic and inorganic layers on a substrate.

[0003] The electrodes, multiple organic layers, and inorganic layers included in the display element may be a deposition pattern formed in a predetermined area through a deposition process. The deposition pattern may be patterned using a mask with defined through-holes so as to be formed in a predetermined area. The deposition pattern may be formed in an area exposed by the through-holes. The shape of the deposition pattern may be controlled according to the shape of the through-holes. The problem to be solved

[0004] The present invention aims to provide a deposition mask with improved deposition precision for a deposition process and a method for manufacturing a display panel using the same.

[0005] The present invention aims to provide a method for manufacturing a deposition mask that increases the reliability of the manufactured deposition mask while improving the manufacturing process yield. means of solving the problem

[0006] A deposition mask according to one embodiment of the present invention comprises a metal and a mask body having a plurality of through-holes defined therein and a thickness of 50 micrometers or more and 200 micrometers or less, wherein each of the plurality of through-holes includes a first through-hole and a second through-hole defined along the thickness direction of the mask body, and the mask body includes a first portion in which the first through-hole is defined, and a second portion in which the second through-hole is defined having a width smaller than the width of the first through-hole and the width increases as it goes down along the thickness direction of the mask body.

[0007] The second part is disposed on the first part, and the thickness of the first part may be 5% or more and 50% or less of the total thickness of the mask body.

[0008] The first part is disposed on the second part, and the thickness of the first part may be 30% or more and 80% or less of the total thickness of the mask body.

[0009] The first part includes a first sub-part disposed on the second part and a second sub-part disposed below the second part, and the thickness of each of the first sub-part and the second sub-part may independently be 5% or more and 40% or less of the total thickness of the mask body.

[0010] The above mask body may include Invar.

[0011] The first portion may define the first penetration portion and include a first side having a rounded shape in which the slope changes as it proceeds along the thickness direction.

[0012] The second portion defines the second penetration portion and may include a second side inclined at a constant taper angle along the thickness direction.

[0013] The above taper angle may be 30 degrees or more and 70 degrees or less.

[0014] The width of each of the above plurality of penetrations may be 10 millimeters or more and 400 millimeters or less.

[0015] A method for manufacturing a deposition mask according to one embodiment of the present invention includes the steps of preparing a base sheet having a thickness of 50 micrometers or more and 200 micrometers or less, wet-etching at least one surface of the base sheet to reduce the thickness of the base sheet, and irradiating a laser onto a portion of the portion of the base sheet where the thickness has been reduced to form a plurality of through-holes.

[0016] The base sheet includes an upper surface and a lower surface facing the upper surface, and in the step of reducing the thickness of the base sheet, the lower surface is wet-etched, and in the step of forming the plurality of through holes, the laser can be irradiated onto the upper surface.

[0017] The above base sheet includes an upper surface and a lower surface facing the upper surface, and in the step of reducing the thickness of the base sheet, the upper surface is wet-etched, and in the step of forming the plurality of through holes, the laser can be irradiated onto the upper surface.

[0018] The above base sheet includes an upper surface and a lower surface facing the upper surface, and in the step of reducing the thickness of the base sheet, both the upper surface and the lower surface are wet-etched, and in the step of forming the plurality of through-holes, the laser can be irradiated onto the lower surface.

[0019] In the step of forming the plurality of through holes, the width of each of the plurality of through holes may be formed to be 10 millimeters or more and 400 millimeters or less.

[0020] A method for manufacturing a display panel according to one embodiment of the present invention comprises the steps of preparing a target substrate, forming and placing a deposition mask having a plurality of through-holes defined on the target substrate, forming a plurality of deposition patterns corresponding to the through-holes on the target substrate, and removing the deposition mask, wherein the step of forming the deposition mask includes the step of reducing the thickness of the base sheet by wet etching at least one surface of the base sheet having a thickness of 50 micrometers or more and 200 micrometers or less, and the step of forming a plurality of through-holes by etching a portion of the portion of the base sheet where the thickness has been reduced.

[0021] The deposition mask may include a first portion in which a first through-hole is defined, and a second portion in which a second through-hole is defined having a width smaller than the width of the first through-hole and the width increases as it gets closer to the target substrate.

[0022] The first portion may define the first penetration portion and include a first side having a rounded shape in which the slope changes as it proceeds along the thickness direction.

[0023] The second portion may define the second penetration portion and include a second side angle inclined at a constant taper angle such that the thickness increases as it approaches the target substrate.

[0024] The above target substrate comprises a base substrate and a plurality of circuit element layers disposed on the base substrate, and the plurality of deposition patterns may be a common layer disposed on each of the plurality of circuit element layers.

[0025] The plurality of circuit element layers include a first circuit element layer and a second circuit element layer spaced apart from each other in a plane, and the plurality of deposition patterns include a first deposition pattern disposed on the first circuit element layer and a second deposition pattern disposed on the second circuit element layer, and the first deposition pattern and the second deposition pattern may be spaced apart from each other in a plane. Effects of the invention

[0026] According to an embodiment of the present invention, the laser irradiation process time for forming a through-hole defined in a deposition mask is reduced, thereby reducing the time and cost of the deposition mask manufacturing process. Meanwhile, the formation of a wide shadow during the deposition process through the deposition mask is prevented and the deposition precision is improved, thereby preventing defects from occurring in the display panel formed using the deposition mask. Brief explanation of the drawing

[0027] FIG. 1 is a cross-sectional view of a display panel according to one embodiment of the present invention. FIG. 2 is a perspective view of a deposition mask according to one embodiment of the present invention. FIGS. 3a to 3c are cross-sectional views of a deposition mask according to one embodiment of the present invention. FIGS. 4a to 4e are perspective views briefly illustrating a method for manufacturing a display panel using a deposition mask according to one embodiment of the present invention. FIG. 4f is a simplified cross-sectional view illustrating a display panel manufactured using a deposition mask according to one embodiment of the present invention. FIGS. 5A and 5B are cross-sectional views briefly illustrating some steps of a method for manufacturing a display panel using a deposition mask according to one embodiment of the present invention. FIGS. 6a and 6b are cross-sectional views briefly illustrating some steps of a method for manufacturing a display panel using a deposition mask according to one embodiment of the present invention. FIGS. 7a to 7c are perspective views sequentially illustrating some steps of a method for manufacturing a deposition mask according to one embodiment of the present invention. FIGS. 8a to 8c are perspective views sequentially illustrating some steps of a method for manufacturing a deposition mask according to one embodiment of the present invention. FIGS. 9a to 9c are perspective views sequentially illustrating some steps of a method for manufacturing a deposition mask according to one embodiment of the present invention. Specific details for implementing the invention

[0028] Embodiments of the present invention will be described below with reference to the drawings. In this specification, where a component (or region, layer, part, etc.) is described as being "on," "connected," or "joined" to another component, it means that it may be directly connected / joined to the other component or that a third component may be placed between them.

[0029] Identical reference numerals denote identical components. Additionally, in the drawings, the thicknesses, proportions, and dimensions of the components are exaggerated for the effective illustration of the technical content. "And / or" includes all one or more combinations that the associated components may define.

[0030] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. A singular expression includes a plural expression unless the context clearly indicates otherwise.

[0031] Additionally, terms such as "below," "lower side," "above," and "upper side" are used to describe the relationships between the components depicted in the drawings. These terms are relative concepts and are described based on the directions indicated in the drawings.

[0032] Terms such as "include" or "have" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0033] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0034] FIG. 1 is a cross-sectional view of a display panel according to an embodiment of the present invention. In this embodiment, the display panel (DP) may be a light-emitting display panel. FIG. 1 illustrates a cross-section corresponding to one of a plurality of pixels. A cross-section corresponding to two transistors (T1, T2) and a light-emitting element (OLED) is illustrated.

[0035] The upper surface of each component is parallel to the surface defined by the first direction (DR1) and the second direction (DR2). The thickness direction of each component is indicated by the third direction (DR3). The upper (or top) and lower (or bottom) sides of each component are distinguished by the third direction (DR3). However, the directions indicated by the first to third directions (DR1, DR2, DR3) are relative concepts and can be converted to other directions.

[0036] As illustrated in FIG. 1, the display panel (DP) includes a base layer (BL), a circuit element layer (ML) disposed on the base layer (BL), a display element layer (EL) disposed on the circuit element layer (ML), and an insulating layer (ECP, hereinafter defined as an upper insulating layer) disposed on the display element layer (EL).

[0037] The base layer (BL) may include a synthetic resin layer. A synthetic resin layer is formed on a support substrate used during the manufacture of a display panel (DP). Subsequently, a conductive layer and an insulating layer, etc., are formed on the synthetic resin layer. When the support substrate is removed, the synthetic resin layer corresponds to the base layer (BL).

[0038] The circuit element layer (ML) includes at least one insulating layer and a circuit element. The circuit element includes a signal line, a pixel driving circuit, etc. The circuit element layer (ML) can be formed through a process of forming an insulating layer, a semiconductor layer, and a conductive layer by coating, deposition, etc., and a process of patterning the insulating layer, the semiconductor layer, and the conductive layer by photolithography.

[0039] In this embodiment, the circuit element layer (ML) includes a buffer layer (BFL), a barrier layer (BRL), and a plurality of insulating layers (10, 20, 30, 40, 50, 60, 70). The buffer layer (BFL), the barrier layer (BRL), and the first to seventh insulating layers (10, 20, 30, 40, 50, 60, 70) may include either an inorganic film or an organic film. The buffer layer (BFL) and the barrier layer (BRL) may include an inorganic film. At least one of the fifth insulating layer (50), the sixth insulating layer (60), and the seventh insulating layer (70) may include an organic film.

[0040] FIG. 1 illustrates, by way of example, the arrangement relationship of the first active (A1), second active (A2), first gate (G1), second gate (G2), first source (S1), second source (S2), first drain (D1), and second drain (D2) constituting the first and second transistors (T1, T2). In this embodiment, the first active (A1) and the second active (A2) may comprise different materials. The first active (A1) may comprise a polysilicon semiconductor, and the second active (A2) may comprise a metal oxide semiconductor. The first source (S1) and the first drain (D1) are regions with a higher doping concentration compared to the first active (A1) and function as electrodes. The second source (S2) and the second drain (D2) are regions where the metal oxide semiconductor has been reduced and function as electrodes.

[0041] In one embodiment of the present invention, the first active (A1) and the second active (A2) may include the same semiconductor material, and the stacked structure of the circuit element layer (ML) may be simpler.

[0042] The display element layer (EL) includes a pixel definition layer (PDL) and a light-emitting element (OLED). The light-emitting element (OLED) may be an organic light-emitting diode or a quantum dot light-emitting diode. The light-emitting element (OLED) may include an anode (AE), a hole control layer (HCL), a light-emitting layer (EML), an electronic control layer (ECL), a cathode (CE), and an optical control layer (CPL) stacked sequentially.

[0043] An anode (AE) is placed on the seventh insulating layer (70). An opening (PDL-OP) of the pixel defining film (PDL) exposes at least a portion of the anode (AE). An opening (PDL-OP) of the pixel defining film (PDL) can define a light-emitting region (PXA). A non-light-emitting region (NPXA) can surround the light-emitting region (PXA).

[0044] The hole control layer (HCL) and the electronic control layer (ECL) can be placed in common across the emitting region (PXA) and the non-emitting region (NPXA). The emitting layer (EML) can be provided in a patterned form corresponding to the aperture (PDL-OP). The emitting layer can be deposited in a different manner compared to the film-type hole control layer (HCL) and electronic control layer (ECL). The hole control layer (HCL) and the electronic control layer (ECL) can be formed in common across multiple pixels using an open mask. A cathode (CE) is placed on the electronic control layer (ECL).

[0045] An optical control layer (CPL) may be disposed on the cathode (CE). The optical control layer (CPL) may include a multilayer or a single layer. The optical control layer (CPL) may be an organic layer or an inorganic layer, and may be a layer having a refractive index of 1.6 or higher for light in a wavelength range of 550 nm or more and 660 nm or less.

[0046] A thin film encapsulation layer (TFE) is disposed on the optical control layer (CPL). The thin film encapsulation layer (TFE) may be a layer for encapsulating a display element layer (EL). The thin film encapsulation layer (TFE) may include a plurality of thin films. The plurality of thin films may include inorganic films and organic films. The thin film encapsulation layer (TFE) may include an insulating layer for encapsulating the display element layer (EL) and an insulating layer for improving light emission efficiency.

[0047] The thin film encapsulation layer (TFE) may include a first inorganic film, an organic film, and a second inorganic film. The first inorganic film and the second inorganic film may include silicon nitride, silicon oxide, or a compound in combination thereof. The first inorganic film and the second inorganic film may be formed via chemical vapor deposition (CVD).

[0048] The organic film can provide a flat surface on the first inorganic film. Curvatures formed on the upper surface of the first inorganic film or particles present on the first inorganic film are covered by the organic film, thereby blocking the influence of the surface condition of the upper surface of the first inorganic film on components formed on the organic film, such as the second inorganic film. Additionally, the organic film can relieve stress between contacting layers. The organic film may contain organic materials and may be formed through solution processes such as spin coating, slit coating, or inkjet processes.

[0049] In FIG. 1, at least one of the layers commonly formed on a plurality of pixels may be formed by deposition using a deposition mask of one embodiment. In one embodiment, at least one of the hole control layer (HCL), electron control layer (ECL), cathode (CE), and optical control layer (CPL) among the components included in the display element layer (EL) may be formed by deposition using a deposition mask of one embodiment. Alternatively, a thin film encapsulation layer (TFE) disposed on the display element layer (EL) may be formed by deposition using a deposition mask of one embodiment. Below, the deposition mask of one embodiment will be described in detail.

[0050] FIG. 2 is a perspective view of a deposition mask according to one embodiment of the present invention. FIG. 3a is a cross-sectional view of a deposition mask according to one embodiment of the present invention. FIG. 3a shows a cross-section cut along I-I' shown in FIG. 2.

[0051] As shown in FIG. 2, the deposition mask (MSK) includes a mask body (MB) in which a plurality of through-holes (OP) are defined.

[0052] At least one through-hole (OP) is defined in the mask body (MB). A plurality of through-holes (OP) are defined in the mask body (MB). The plurality of through-holes (OP) may be arranged spaced apart from each other at a certain distance in a first direction (DR1) and / or a second direction (DR2) and may form a certain pattern. Each of the plurality of through-holes (OP) may be defined by penetrating the deposition mask (MSK) along the thickness direction (DR3, hereinafter referred to as the third direction) of the deposition mask (MSK).

[0053] In FIG. 2, each of the plurality of through-holes (OP) is exemplarily shown to have a rectangular shape with rounded corners on a plane, but is not limited thereto and the plurality of through-holes (OP) may have various shapes corresponding to the shape of the pattern to be deposited. For example, each of the plurality of through-holes (OP) may have a rectangular shape or a circular shape.

[0054] The width of the plurality of through-holes (OP) can be determined in correspondence with the shape of the pattern to be deposited. In one embodiment, the width of the plurality of through-holes (OP) may be 10 millimeters or more. The width of the plurality of through-holes (OP) may be 10 millimeters or more and 400 millimeters or less. For example, when each of the plurality of through-holes (OP) has a rectangular shape with rounded corners on a plane, the short side of the plurality of through-holes (OP) may have a width of 10 millimeters or more and 150 millimeters or less, and the long side of the plurality of through-holes (OP) may have a width of 40 millimeters or more and 400 millimeters or less.

[0055] The mask body (MB) comprises a plurality of metals. The mask body (MB) may comprise iron and nickel. The mask body (MB) may comprise an alloy of iron and nickel. The mask body (MB) may be formed from an alloy of iron and nickel. Although not limited thereto, the mask body (MB) may comprise invar. The nickel content in the alloy of iron and nickel may range from 30 wt% to 45 wt%. More specifically, the nickel content in the alloy of iron and nickel may range from 33 wt% to 42 wt%. The mask body (MB) may be an alloy containing nickel and having a coefficient of thermal expansion of 5 ppm / °C or less.

[0056] Referring to FIG. 2 and FIG. 3a together, a mask body (MB) of one embodiment includes a first part (MB1) and a second part (MB2). As shown in FIG. 3a, the first part (MB1) may be positioned at the bottom with respect to the third direction (DR3), which is the thickness direction of the mask body (MB), and the second part (MB2) may be positioned at the top with respect to the third direction (DR3). That is, the second part (MB2) may be positioned on the first part (MB1).

[0057] A first penetration part (OP1) is defined in the first part (MB1), and a second penetration part (OP2) is defined in the second part (MB2). The first penetration part (OP1) and the second penetration part (OP2) are each defined along the third direction (DR3), which is the thickness direction of the mask body (MB), and the first penetration part (OP1) and the second penetration part (OP2) can be combined to define a penetration part (OP) of the mask body (MB).

[0058] The first penetration (OP1) defined in the first part (MB1) has a larger width than the second penetration (OP2) defined in the second part (MB2). The second penetration (OP2) has a smaller width than the first penetration (OP1), so that the penetration (OP) of the mask body (MB) can be substantially defined through the end of the second penetration (OP2). The width of each of the aforementioned plurality of penetrations (OP) may be the width defined substantially by the end of the second penetration (OP2). That is, the width defined through the end of the second penetration (OP2) may be 10 millimeters or more. The width defined through the end of the second penetration (OP2) may be 10 millimeters or more and 400 millimeters or less.

[0059] The first penetration portion (OP1) is defined by the first side (LS1) of the first portion (MB1). The first side (LS1) may include a rounded shape in which the slope changes as it proceeds along the third direction (DR3), which is the thickness direction of the mask body (MB). As illustrated in FIG. 3a, the first side (LS1) may have a rounded shape in which the slope decreases as it proceeds along the third direction (DR3). The first side (LS1) may have a rounded shape in which the slope decreases as it proceeds toward the second portion (MB2).

[0060] The second penetration portion (OP2) is defined by the second side (LS2) of the second portion (MB2). The second side (LS2) may be inclined at a constant taper angle (θ) along the third direction (DR3), which is the thickness direction of the mask body (MB). The taper angle (θ) may be an acute angle. That is, the size of the second penetration portion (OP2) may increase as it goes upward along the third direction (DR3). Accordingly, the width of the second portion (MB2) may increase as it goes downward relative to the third direction (DR3), which is the thickness direction of the mask body (MB). The taper angle (θ) may be determined according to the characteristics of the laser irradiated to form the penetration portion (OP) in the mask manufacturing process. In one embodiment, the taper angle (θ) may be 30 degrees or more and 70 degrees or less.

[0061] In one embodiment, the total thickness (d1) of the mask body (MB) is 50 micrometers or more and 200 micrometers or less. The mask body (MB) has a plurality of through-holes (OP) formed corresponding to each of a plurality of cell regions defined on a target substrate, and the thickness (d1) may be 50 micrometers or more and 200 micrometers or less in order to form a deposition pattern in the cell regions. If the thickness (d1) of the mask body (MB) is less than 50 micrometers, the durability of the deposition mask (MSK) used in the deposition process may be insufficient, and if the thickness (d1) of the mask body (MB) is greater than 200 micrometers, the total thickness of the deposition mask (MSK) increases, making it difficult to form a plurality of through-holes (OP), and the deposition precision may decrease when the deposition mask (MSK) is used in the deposition process.

[0062] As shown in FIG. 3a, when the first part (MB1) is positioned at the bottom with respect to the third direction (DR3), which is the thickness direction of the mask body (MB), and the second part (MB2) is positioned at the top with respect to the third direction (DR3), the thickness (d2) of the first part (MB1) may be 5% or more and 50% or less of the total thickness (d1) of the mask body (MB). The thickness (d3) of the second part (MB2) may be more than 50% and less than 95% of the total thickness (d1) of the mask body (MB). The thickness (d2) of the first part (MB1) may be set to 5% or more and 50% or less of the total thickness (d1) of the mask body (MB) in order to improve the manufacturing process yield of the deposition mask (MSK), improve deposition precision, and suppress shadow generation. If the thickness (d2) of the first part (MB1) is less than 5% of the total thickness (d1) of the mask body (MB), the effect of increasing the manufacturing process yield of the deposition mask (MSK) may not be secured. If the thickness (d2) of the first part (MB1) is more than 50% of the total thickness (d1) of the mask body (MB), shadow generation becomes excessive, and the deposition precision may decrease when the deposition mask (MSK) is used in the deposition process.

[0063] A deposition mask (MSK) according to one embodiment is used in a process for forming a deposition pattern provided as a common layer in each of the plurality of cell regions for a target substrate including a plurality of cell regions, and the mask body (MB) which includes a metal and has a thickness of 50 micrometers or more and 200 micrometers or less includes a first part (MB1) in which a first penetration part (OP1) is defined and a second part (MB2) in which a second penetration part (OP2) is defined. Through this, the time required to manufacture the deposition mask (MSK) is reduced, and the deposition precision can be high when the deposition mask (MSK) is used in the deposition process.

[0064] More specifically, the deposition mask (MSK) includes a first portion (MB1) in which a rounded side is formed through a wet etching process and a second portion (MB2) in which a side inclined at a constant taper angle is formed through laser irradiation. As the thickness of the mask body (MB) is reduced through the wet etching process, the time required for the laser irradiation process is reduced, thereby reducing the time required to form the deposition mask (MSK). At the same time, a second penetration portion (OP2) that defines a substantial penetration portion (OP) is formed in the second portion (MB2) through laser irradiation, so that deposition precision is improved and shadow generation can be suppressed. Accordingly, the dead space of the display panel manufactured through the deposition mask (MSK) of one embodiment can be reduced and defects can be reduced.

[0065] FIGS. 3B and 3C are cross-sectional views of a deposition mask according to another embodiment of the present invention. FIGS. 3B and 3C show a cross-section of a deposition mask of another embodiment cut along I-I' as shown in FIG. 2, similar to FIG. 3A. Hereinafter, in describing a deposition mask of one embodiment with reference to FIGS. 3B and 3C, the same reference numerals are given to the previously described components, and a detailed description is omitted.

[0066] Referring to FIG. 2 and FIG. 3b together, a mask body (MB) of one embodiment includes a first part (MB1-1) and a second part (MB2-1), wherein the first part (MB1-1) is positioned above with respect to a third direction (DR3), which is the thickness direction of the mask body (MB), and the second part (MB2-1) is positioned below with respect to the third direction (DR3). That is, the first part (MB1-1) can be positioned on the second part (MB2-1).

[0067] The first penetration portion (OP1) is defined by the first side (LS1-1) of the first portion (MB1-1), and the first side (LS1-1) may include a rounded shape in which the slope changes as it proceeds along the third direction (DR3), which is the thickness direction of the mask body (MB). As shown in FIG. 3b, the first side (LS1-1) may have a rounded shape in which the slope increases as it proceeds along the third direction (DR3). The first side (LS1-1) may have a rounded shape in which the slope decreases as it proceeds toward the second portion (MB2-1).

[0068] The second penetration portion (OP2) is defined by the second side (LS2-1) of the second portion (MB2-1). The second side (LS2-1) may be inclined at a constant taper angle (θ) along the third direction (DR3), which is the thickness direction of the mask body (MB). The taper angle (θ) may be an acute angle. In one embodiment, the taper angle (θ) may be 30 degrees or more and 70 degrees or less.

[0069] As shown in FIG. 3b, when the first part (MB1-1) is positioned above the third direction (DR3), which is the thickness direction of the mask body (MB), and the second part (MB2-1) is positioned below the third direction (DR3), the thickness (d2) of the first part (MB1-1) may be 30% or more and 80% or less of the total thickness (d1) of the mask body (MB). The thickness (d3) of the second part (MB2-1) may be more than 20% and less than 70% of the total thickness (d1) of the mask body (MB). The thickness (d2) of the first part (MB1-1) may be set to 30% or more and 80% or less of the total thickness (d1) of the mask body (MB) in order to improve the manufacturing process yield of the deposition mask (MSK), improve deposition precision, and suppress shadow generation. If the thickness (d2) of the first part (MB1-1) is less than 30% of the total thickness (d1) of the mask body (MB), the effect of increasing the manufacturing process yield of the deposition mask (MSK) may not be secured. If the thickness (d2) of the first part (MB1-1) is more than 80% of the total thickness (d1) of the mask body (MB), shadow generation becomes excessive, and the deposition precision may decrease when the deposition mask (MSK) is used in the deposition process.

[0070] Referring to FIG. 2 and FIG. 3c together, a mask body (MB) of one embodiment includes a first part (MB1-2) and a second part (MB2-2), and the first part (MB1-2) may include a plurality of sub-parts (MB1-2a, MB1-2b). The first part (MB1-2) may include a first sub-part (MB1-2a) positioned above the second part (MB2-2) with respect to a third direction (DR3), which is the thickness direction of the mask body (MB), and a second sub-part (MB1-2b) positioned below the second part (MB2-2). That is, the first sub-part (MB1-2a) may be positioned on the second part (MB2-2), and the second part (MB2-2) may be positioned on the second sub-part (MB1-2b). The second part (MB2-2) can be placed between the first sub-part (MB1-2a) and the second sub-part (MB1-2b).

[0071] A first sub-penetration (OP1-1) may be defined in the first sub-part (MB1-1a), a second penetration (OP2) may be defined in the second sub-part (MB2), and a second sub-penetration (OP1-2) may be defined in the second sub-part (MB1-2b). The first sub-penetration (OP1-1), the second penetration (OP2), and the second sub-penetration (OP1-2) are each defined along a third direction (DR3), which is the thickness direction of the mask body (MB), and the first sub-penetration (OP1-1), the second penetration (OP2), and the second sub-penetration (OP1-2) may be combined to define a penetration (OP) of the mask body (MB).

[0072] The first sub-penetration (OP1-1) is defined by the first sub-side (LS1-2a) of the first sub-part (MB1-2a), and the first sub-side (LS1-2a) may include a rounded shape in which the slope changes as it proceeds along the third direction (DR3), which is the thickness direction of the mask body (MB). The second sub-penetration (OP1-2) is defined by the second sub-side (LS1-2b) of the second sub-part (MB1-2b), and the second sub-side (LS1-2b) may include a rounded shape in which the slope changes as it proceeds along the third direction (DR3), which is the thickness direction of the mask body (MB). As illustrated in FIG. 3c, the first sub-side (LS1-2a) may have a rounded shape in which the slope increases as it proceeds along the third direction (DR3), and the second sub-side (LS1-2b) may have a rounded shape in which the slope decreases as it proceeds along the third direction (DR3). Each of the first sub-side (LS1-2a) and the second sub-side (LS1-2b) may have a rounded shape in which the slope decreases as it proceeds toward the second part (MB2-2).

[0073] The second penetration portion (OP2) is defined by the second side (LS2-2) of the second portion (MB2-2). The second side (LS2-2) may be inclined at a constant taper angle (θ) along the third direction (DR3), which is the thickness direction of the mask body (MB). The taper angle (θ) may be an acute angle. In one embodiment, the taper angle (θ) may be 30 degrees or more and 70 degrees or less.

[0074] As shown in FIG. 3c, when the first part (MB1-2) includes a first sub-part (MB1-2a) positioned above the second part (MB2-2) and a second sub-part (MB1-2b) positioned below the second part (MB2-2) based on the third direction (DR3), which is the thickness direction of the mask body (MB), the thickness (d2-1, d2-2) of the first sub-part (MB1-2a) and the second sub-part (MB1-2b), respectively, may be 5% or more and 40% or less of the total thickness (d1) of the mask body (MB). The thickness (d2-1) of the first sub-part (MB1-2a) may be 5% or more and 40% or less of the total thickness (d1) of the mask body (MB), and the thickness (d2-2) of the second sub-part (MB1-2b) may be 5% or more and 40% or less of the total thickness (d1) of the mask body (MB). The combined thickness of the first sub-part (MB1-2a) and the second sub-part (MB1-2b), i.e., the total thickness of the first part (MB1-2), may be 10% or more and 80% or less of the total thickness (d1) of the mask body (MB). The thicknesses (d2-1, d2-2) of the first sub-part (MB1-2a) and the second sub-part (MB1-2b) included in the first part (MB1-2) may be set to 5% or more and 40% or less of the total thickness (d1) of the mask body (MB) in order to improve the manufacturing process yield of the deposition mask (MSK), while also improving deposition precision and suppressing shadow generation. If the thickness (d2-1, d2-2) of each of the first sub-part (MB1-2a) and the second sub-part (MB1-2b) is less than 5% of the total thickness (d1) of the mask body (MB), the effect of increasing the manufacturing process yield of the deposition mask (MSK) may not be secured. If the thickness (d2-1, d2-2) of each of the first sub-part (MB1-2a) and the second sub-part (MB1-2b) exceeds 40% of the total thickness (d1) of the mask body (MB), shadow generation becomes excessive, and the deposition precision may be reduced when the deposition mask (MSK) is used in the deposition process.

[0075] FIGS. 4a to 4e are perspective views briefly illustrating a method for manufacturing a display panel using a deposition mask according to an embodiment of the present invention. FIG. 4f is a cross-sectional view briefly illustrating a display panel manufactured using a deposition mask according to an embodiment of the present invention. FIGS. 5a and 5b are cross-sectional views briefly illustrating some steps of a method for manufacturing a display panel using a deposition mask according to an embodiment of the present invention. FIGS. 6a and 6b are cross-sectional views briefly illustrating some steps of a method for manufacturing a display panel using a deposition mask according to an embodiment of the present invention. FIGS. 5a and 5b illustrate a cross-section cut along II-II' of FIG. 4b. FIGS. 6a and 6b illustrate a cross-section cut along III-III' of FIG. 4b. Meanwhile, the same reference numerals are assigned to configurations identical to those described in FIGS. 1 to 3c, and redundant descriptions are omitted.

[0076] As illustrated in FIGS. 4a and 4b, a deposition mask (MSK) is placed on a target substrate (DP-I1). In this embodiment, the deposition mask (MSK) is exemplarily illustrated as including a plurality of through-holes arranged along a first direction (DR1) and a second direction (DR2), but is not limited thereto, and the through-holes of the deposition mask (MSK) may have various shapes and arrangements. Additionally, FIGS. 4a and 4b exemplarily illustrate a single deposition mask (MSK) placed on the target substrate (DP-I1), but a plurality of deposition masks (MSK) may be placed on the target substrate (DP-I1).

[0077] Meanwhile, in this embodiment, a support (SP) may be further disposed between the deposition mask (MSK) and the target substrate (DP-I1). The support (SP) may be provided in a frame shape that exposes at least a portion of the target substrate (DP-I1). However, it is not limited thereto, and the support (SP) may be disposed in any area that overlaps with the remaining area excluding the penetration portion of the deposition mask (MSK). The deposition mask (MSK) may be provided integrally by being coupled to the support (SP). In this embodiment, the support (SP) may prevent direct contact between the masks (MSK) and the target substrate (DP-I1). Accordingly, damage to the target substrate (DP-I1) caused by contact with the masks (MSK) can be prevented. However, this is illustrated as an example, and in the method for manufacturing a display panel according to one embodiment of the present invention, the support (SP) may be omitted and the masks (MSK) may be placed directly on the target substrate (DP-I1), and it is not limited to any one embodiment. The support (SP) may include a metal, for example, the support (SP) may include a metal having a thermal expansion coefficient of 5 ppm / ℃ or less.

[0078] A portion of the target substrate (DP-I1) exposed by the support (SP) may overlap with an area where the penetration portion (OP) of the deposition mask (MSK) is defined. A plurality of cell regions, each having a plurality of circuit element layers (ML), are defined on the target substrate (DP-I1), and the deposition mask (MSK) may be positioned so that the cell region having a plurality of circuit element layers (ML) formed on the target substrate (DP-I1) overlaps with the area where the penetration portion (OP) of the deposition mask (MSK) is defined.

[0079] Referring to FIG. 4c, after the step of placing a deposition mask (MSK) on a target substrate (DP-I1), a plurality of deposition patterns (ECPs) are formed through a deposition process in an area corresponding to the through-hole of the deposition mask (MSK), and then the deposition mask (MSK) is removed. The target substrate (DP-I2) from which the deposition mask (MSK) has been removed may be in a state where a plurality of deposition patterns (ECPs) are formed on the target substrate (DP-I1). The plurality of deposition patterns (ECPs) may be formed corresponding to the through-hole (OP) of the deposition mask (MSK). In this embodiment, a total of 12 deposition patterns (ECPs) are shown spaced apart from each other. Each of the plurality of deposition patterns (ECPs) may include a plurality of inorganic layers and a single organic layer, and the inorganic layers and organic layers included in the plurality of deposition patterns (ECPs) may be formed corresponding to the through-holes (OP), respectively. As described above, the plurality of deposition patterns (ECP) may be at least one of the common layer, i.e., the hole control layer (HCL), the electron control layer (ECL), the cathode (CE), and the optical control layer (CPL), among the components included in the display element layer (EL, FIG. 1). Alternatively, the plurality of deposition patterns (ECP) disposed on the display element layer (EL, FIG. 1) may be a thin film encapsulation layer (TFE, FIG. 1). However, it is not limited thereto, and any configuration provided as a common layer among the components included in the display panel (DP, FIG. 1) that is not patterned for each individual pixel may correspond to the plurality of deposition patterns (ECP) according to one embodiment without limitation.

[0080] Referring to FIGS. 4c and 4d, the target substrate (DP-I2) from which the deposition mask (MSK) has been removed is cut along cutting lines (CL) defined on the target substrate (DP-I2) from which the deposition mask (MSK) has been removed, thereby separating it into a plurality of panels (DP-P). Each of the panels (DP-P) forms a display panel (DP).

[0081] According to the present invention, a plurality of display panels (DP-P) can be formed by patterning a single target substrate (DP-I1), thereby shortening the process time and reducing the process cost. However, this is illustrated as an example, and according to the present invention, a single display panel (DP) may be provided from the target substrate (DP-I1) depending on the size of the display panel (DP), and is not limited to any one embodiment.

[0082] Referring to FIGS. 4e and 4f, the display panel (DP) includes a base layer (BL) and a deposition pattern (ECP) disposed on the base layer (BL). The deposition pattern (ECP) may be disposed on a circuit element layer (ML) disposed on the base layer (BL). The specific configuration of the base layer (BL) and the circuit element layer (ML) may be described in the same way as described in FIG. 1.

[0083] Hereinafter, a process for forming a deposition pattern in the present invention will be described with reference to FIGS. 5a, 5b, 6a, and 6b.

[0084] FIG. 5a shows a cross-sectional view corresponding to the target substrate (DP-I1) illustrated in FIG. 4a and FIG. 4b. Referring to FIG. 5a, the target substrate (DP-I1) may include a base layer (BL) and a circuit element layer (ML). In this embodiment, for ease of explanation, the stacked structure of the circuit element layer (ML) is schematically illustrated.

[0085] The base layer (BL) may include a plastic substrate, a glass substrate, a metal substrate, etc. The plastic substrate includes a resin. For example, the base layer (BL) may include at least one of an acrylic resin, a methacrylic resin, a polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a siloxane resin, a polyimide resin, a polyamide resin, and a perylene resin.

[0086] The circuit element layer (ML) may include a plurality of insulating layers and at least one transistor.

[0087] In FIGS. 5a and 6a, a deposition mask (MSK) is exemplarily shown being spaced apart from a target substrate (DP-I1) by a predetermined distance, but is not limited thereto, and the deposition mask (MSK) may be positioned to be in contact with the target substrate (DP-I1). Additionally, FIGS. 5a and 6a exemplarily show an embodiment of the deposition mask (MSK) shown in FIG. 3a, but is not limited thereto, and a deposition mask of an embodiment shown in FIGS. 3b and 3c may be used in the deposition process.

[0088] When the deposition mask (MSK) is placed on the target substrate (DP-I1), it can be placed such that the angle (θ) formed by the second part (MB2) of the mask body (MB) is acute with respect to the upper surface of the target substrate (DP-I1). That is, the deposition mask (MSK) can be placed on the target substrate (DP-I1) such that the width of the second opening (OP2) increases as it moves further away from the upper surface of the target substrate (DP-I1).

[0089] The through-holes (OP) of the deposition mask (MSK) can be positioned to overlap the circuit element layer (ML) in a plane. The width of the through-holes (OP) can substantially correspond to the width of the second through-holes (OP2) defined in the second part (MB2) of the deposition mask (MSK).

[0090] Referring to FIGS. 5a and 5b, in a method for manufacturing a display panel according to one embodiment, a deposition pattern (ECP) is formed through a deposition material (DM) in an area corresponding to a through-hole (OP) of a deposition mask (MSK). The deposition pattern (ECP) may be formed on a circuit element layer (ML). The deposition pattern (ECP) may be a common layer formed on the circuit element layer (ML), namely a hole control layer, an electron control layer, and a cathode. Alternatively, the deposition pattern (ECP) may be a thin film encapsulation layer disposed on the display element layer.

[0091] The deposition material (DM) may include organic and inorganic materials. Depending on the stacking structure of the deposition pattern (ECP), the deposition material (DM) may include a plurality of organic and inorganic materials. If the deposition pattern (ECP) is a hole control layer, the deposition material (DM) may include a hole injection material or a hole transport material, and if the deposition pattern (ECP) is an electron control layer, the deposition material (DM) may include an electron injection material or an electron transport material. If the deposition pattern (ECP) is a cathode, the deposition material (DM) may include a plurality of metals or metal oxides. If the deposition pattern (ECP) is a thin film encapsulation layer, the deposition pattern (ECP) includes two inorganic layers and one organic layer disposed between them, and the deposition material (DM) may be provided with a first inorganic material, an organic material, and a second inorganic material alternately to conform to the stacking structure.

[0092] The deposition pattern (ECP) may be formed by depositing a deposition material (DM) through various deposition methods. In one embodiment, the deposition pattern (ECP) may be deposited via Chemical Vapor Deposition (CVD).

[0093] Referring to FIGS. 6a and 6b, the circuit element layers (ML1, ML2) may include a first circuit element layer (ML1) and a second circuit element layer (ML2) spaced apart along a first direction (DR1) on a base layer (BL).

[0094] In this embodiment, the through-holes (OP-1, OP-2) of the deposition mask (MSK) may be arranged to overlap in a plane with each circuit element layer (ML1, ML2). A plurality of through-holes (OP-1, OP-2) are defined in the deposition mask (MSK), and each of the plurality of through-holes (OP-1, OP-2) may be arranged to overlap in a plane with each of the plurality of circuit element layers (ML1, ML2). In FIG. 6a, a first through-hole (OP-1) that overlaps with the first circuit element layer (ML1) and a second through-hole (OP-2) that overlaps with the second circuit element layer (ML2) may be defined in the deposition mask (MSK).

[0095] Referring to FIGS. 6a and 6b, in a method for manufacturing a display panel according to one embodiment, a plurality of deposition patterns (ECP1, ECP2) are formed through a deposition material (DM) in an area corresponding to a through-hole (OP-1, OP-2) of a deposition mask (MSK). The plurality of deposition patterns (ECP1, ECP2) may be formed to be disposed on a plurality of circuit element layers (ML1, ML2). In a method for manufacturing a display panel according to one embodiment, a deposition material (DM) may be deposited in an area corresponding to a through-hole (OP-1, OP-2) of a deposition mask (MSK) to form a first deposition pattern (ECP1) disposed on a first circuit element layer (ML1) and a second deposition pattern (ECP2) disposed on a second circuit element layer (ML2).

[0096] Referring again to FIG. 5b, when forming a deposition pattern (ECP) according to one embodiment, a shadow (SD) may be formed by depositing a deposition material in addition to the area corresponding to the through-hole (OP) of the deposition mask (MSK), more specifically, the area corresponding to the second through-hole (OP2) of the deposition mask (MSK), and even in the area overlapping the lower part of the deposition mask (MSK). If the shadow (SD) of the deposition pattern (ECP) is formed over a wide area, the shadows (SD) of adjacent deposition patterns (ECP1, ECP2, FIG. 6b) may come into contact with each other, causing defects such as short circuits or cracks, and the shadow (SD) may be formed on a configuration such as a pad portion included in a display panel, outside the area where the deposition pattern (ECP) is to be formed, for example, causing defects in the display panel. In addition, during the cutting step of the target substrate shown in FIG. 4c and FIG. 4d, defects such as film peeling or cracking may occur during the process of cutting the shadows (SD) that are in contact with each other.

[0097] In a method for manufacturing a display panel according to one embodiment, a deposition mask (MSK) used in a deposition process includes a first portion (MB1) formed through wet etching and a second portion (MB2) formed through laser irradiation, thereby reducing the range in which shadows (SD) occur. In particular, by forming the first portion (MB1) through wet etching, the time required for the entire deposition mask (MSK) formation process is reduced, while the thickness of the second portion (MB2) formed through laser irradiation is secured to be greater than a predetermined thickness, thereby reducing the range in which shadows (SD) occur and improving deposition precision, which can prevent defects occurring in the display panel and improve process reliability.

[0098] FIGS. 7a to 7c are perspective views sequentially illustrating some steps of a method for manufacturing a deposition mask according to one embodiment of the present invention.

[0099] As illustrated in FIG. 7a, a method for manufacturing a deposition mask according to one embodiment includes the step of preparing a base sheet (MS) having a thickness (d1) of 50 micrometers or more and 200 micrometers or less. The base sheet (MS) may include iron and nickel. The base sheet (MS) may be formed through an alloy of iron and nickel. The base sheet (MS) may include Invar. In one embodiment, the base sheet (MS) may be formed by cutting a metal thin film formed through Invar into a certain size.

[0100] As illustrated in FIGS. 7a and 7b, a method for manufacturing a deposition mask according to one embodiment includes the step of reducing the thickness of a base sheet (MS) by wet etching at least one surface of the base sheet (MS). In one embodiment, the base sheet (MS) includes an upper surface (MS-U) and a lower surface (MS-L), and an etching solution (ET) can be provided to the lower surface of the base sheet (MS) to form a processed base sheet (MS-1) with reduced thickness. In the step of providing the etching solution (ET) to the lower surface (MS-L) of the base sheet (MS), a photoresist pattern (PR) may be patterned to block parts other than the portion where the etching solution (ET) is to be provided. Although not illustrated, the photoresist pattern (PR) may be placed on the front surface of the upper surface (MS-U) of the base sheet (MS).

[0101] A processed base sheet (MS-1) that has undergone thickness reduction treatment through an etching solution (ET) may include a first sheet portion (MS1) and a second sheet portion (MS2). The first sheet portion (MS1) may be a portion that has been etched at least partially through the etching solution (ET). The second sheet portion (MS2) may be a portion that has not been etched in the etching process through the etching solution (ET). In the embodiment illustrated in FIGS. 7a and 7b, the thickness (d2) of the first sheet portion (MS1) may be 5% or more and 50% or less of the total thickness (d1) of the base sheet (MS). The thickness (d3) of the second sheet portion (MS2) may be more than 50% and less than 95% of the total thickness (d1) of the base sheet (MS). If the thickness (d2) of the first sheet portion (MS1) is less than 5% of the total thickness (d1) of the base sheet (MS), the effect of increasing the yield of the deposition mask manufacturing process may not be secured. If the thickness (d2) of the first sheet portion (MS1) exceeds 50% of the total thickness (d1) of the base sheet (MS), the shadow of the deposition mask formed through the manufacturing process becomes excessive, and the deposition precision may be reduced when the deposition mask is used in the deposition process.

[0102] As illustrated in FIGS. 7a to 7c, the method includes the step of forming a penetration portion (OP) by irradiating a laser (LS) from the upper surface (MS-U) direction onto a processed base sheet (MS-1) that has undergone thickness reduction treatment. The laser (LS) is irradiated onto a portion of the processed base sheet (MS-1) whose thickness has been reduced by etching solution (ET) treatment. Meanwhile, in the deposition mask manufacturing method according to one embodiment, the penetration portion (OP) is formed by patterning the processed base sheet (MS-1) that has undergone thickness reduction treatment with a laser (LS), so the laser (LS) processing time is reduced, and thus the time and cost of the deposition mask manufacturing process can be reduced. Through the laser (LS) irradiation process, the second penetration portion (OP2) can be formed to include a second side (LS2) having a constant taper angle (θ).

[0103] In a method for manufacturing a deposition mask according to one embodiment, a thickness reduction treatment is performed on a base sheet using an etching solution, and then a through-hole is formed through laser irradiation. This reduces the laser processing time, thereby reducing the time and cost of the deposition mask manufacturing process. At the same time, by limiting the thickness reduction treatment using the etching solution to a predetermined ratio, the thickness formed through laser irradiation can be secured to be greater than a predetermined thickness, and accordingly, a deposition mask can be manufactured in which shadow generation is prevented and deposition precision is improved.

[0104] FIGS. 8a to 8c are perspective views sequentially illustrating some steps of a method for manufacturing a deposition mask according to another embodiment of the present invention. FIGS. 9a to 9c are perspective views sequentially illustrating some steps of a method for manufacturing a deposition mask according to another embodiment of the present invention. Hereinafter, in describing a method for manufacturing a deposition mask according to one embodiment with reference to FIGS. 8a to 8c and FIGS. 9a to 9c, the same reference numerals are assigned to components identical to those described above, and detailed descriptions are omitted.

[0105] Referring to FIGS. 8a to 8c, the method may include the step of reducing the thickness of a base sheet (MS) by wet etching at least one surface of the base sheet (MS), providing an etching solution (ET) to the upper surface (MS-U) of the base sheet (MS) to form a processed base sheet (MS-11) with reduced thickness, and then irradiating a laser (LS) from the direction of the upper surface (MS-U) to form a penetration (OP). In the step of providing the etching solution (ET) to the upper surface (MS-U) of the base sheet (MS), a photoresist pattern (PR) may be patterned to block parts other than the portion where the etching solution (ET) is to be provided. Although not illustrated, the photoresist pattern (PR) may be placed on the front surface of the lower surface (MS-L) of the base sheet (MS).

[0106] A processed base sheet (MS-11) that has undergone thickness reduction treatment through an etching solution (ET) may include a first sheet portion (MS11) and a second sheet portion (MS21). The first sheet portion (MS11) may be a portion that has been etched at least partially through the etching solution (ET). The second sheet portion (MS21) may be a portion that has not been etched during the etching process through the etching solution (ET). In the embodiment illustrated in FIGS. 8a and 8b, the thickness (d2) of the first sheet portion (MS11) may be 30% or more and 80% or less of the total thickness (d1) of the base sheet (MS). The thickness (d3) of the second sheet portion (MS21) may be more than 20% and less than 70% of the total thickness (d1) of the base sheet (MS). If the thickness (d2) of the first sheet portion (MS11) is less than 30% of the total thickness (d1) of the base sheet (MS), the effect of increasing the yield of the deposition mask manufacturing process may not be secured. If the thickness (d2) of the first sheet portion (MS11) is more than 80% of the total thickness (d1) of the base sheet (MS), the occurrence of shadows in the deposition mask formed through the manufacturing process becomes excessive, and the deposition precision may be reduced when the deposition mask is used in the deposition process.

[0107] Referring to FIGS. 9a to 9c, the method may include the step of reducing the thickness of a base sheet (MS) by wet etching at least one surface of the base sheet (MS), and then providing an etching solution (ET) to both the upper surface (MS-U) and the lower surface (MS-L) of the base sheet (MS) to form a processed base sheet (MS-12) with reduced thickness, and subsequently irradiating a laser (LS) from the direction of the upper surface (MS-U) to form a penetration (OP). In the step of providing the etching solution (ET) to each of the upper surface (MS-U) and the lower surface (MS-L) of the base sheet (MS), a photoresist pattern (PR) may be patterned to block parts other than the parts where the etching solution (ET) is to be provided.

[0108] A processed base sheet (MS-12) that has undergone thickness reduction treatment through an etching solution (ET) may include a first sub-sheet portion (MS12-1), a second sub-sheet portion (MS12-2), and a second sheet portion (MS21). The first sub-sheet portion (MS12-1) and the second sub-sheet portion (MS12-2) may be portions that have been etched at least partially through the etching solution (ET). The second sheet portion (MS22) may be a portion that has not been etched in the etching process through the etching solution (ET). In the embodiment illustrated in FIGS. 9a and 9b, the thickness (d2-1, d2-2) of the first sub-sheet portion (MS12-1) and the second sub-sheet portion (MS12-2), respectively, may be 5% or more and 40% or less of the total thickness (d1) of the base sheet (MS). The combined thickness (d2-1, d2-2) of the first sub-sheet portion (MS12-1) and the second sub-sheet portion (MS12-2), i.e., the thickness reduced through etching solution (ET) treatment, may be between 10% and 80%. If the thickness (d2-1, d2-2) of each of the first sub-sheet portion (MS12-1) and the second sub-sheet portion (MS12-2) is less than 5% of the total thickness (d1) of the base sheet (MS), the effect of increasing the yield of the deposition mask manufacturing process may not be secured. If the thickness (d2-1, d2-2) of each of the first sub-sheet portion (MS12-1) and the second sub-sheet portion (MS12-2) exceeds 40% of the total thickness (d1) of the base sheet (MS), the occurrence of shadows in the deposition mask formed through the manufacturing process becomes excessive, and the deposition precision may be reduced when the deposition mask is used in the deposition process.

[0109] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art or those with ordinary knowledge in the art will understand that various modifications and changes can be made to the present invention without departing from the spirit and technical scope of the invention as described in the claims set forth below.

[0110] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be determined by the claims. Explanation of the symbols

[0111] DP: Display panel MSK: Deposition mask MB: Mask body OC: Coating layer OP: Penetrating part

Claims

Claim 1 A deposition mask comprising a metal, a plurality of through-holes defined, and a thickness of 50 micrometers or more and 200 micrometers or less, wherein each of the plurality of through-holes includes a first through-hole and a second through-hole defined along the thickness direction of the mask body, and the mask body includes a first portion where the first through-hole is defined; and a second portion where the second through-hole is defined having a width smaller than the width of the first through-hole, and the width increases downward along the thickness direction of the mask body, wherein the thickness of the first portion is 5% or more and 50% or less of the total thickness of the mask body, and the thickness of the second portion is more than 50% and less than 95% of the total thickness of the mask body. Claim 2 In claim 1, the second part is a deposition mask disposed on the first part. Claim 3 In claim 1, the first part is a deposition mask disposed on the second part. Claim 4 A deposition mask according to claim 1, wherein the first portion comprises a first sub-part disposed on the second portion and a second sub-part disposed below the second portion, and the thickness of each of the first sub-part and the second sub-part is independently 5% or more and 40% or less of the total thickness of the mask body. Claim 5 In claim 1, the mask body is a deposition mask comprising Invar. Claim 6 A deposition mask according to claim 1, wherein the first portion defines the first penetration portion and includes a first side having a rounded shape in which the slope changes as it proceeds along the thickness direction. Claim 7 A deposition mask according to claim 1, wherein the second portion defines the second penetration portion and includes a second side inclined at a constant tapered angle along the thickness direction. Claim 8 In claim 7, the deposition mask having a taper angle of 30 degrees or more and 70 degrees or less. Claim 9 A deposition mask according to claim 1, wherein the width of each of the plurality of penetrations is 10 millimeters or more and 400 millimeters or less. Claim 10 A method for manufacturing a deposition mask comprising a first portion in which a first penetration portion is defined, and a second portion in which a second penetration portion is defined having a width smaller than the width of the first penetration portion and the width increases as it becomes adjacent to a target substrate, wherein the method comprises the steps of: preparing a base sheet having a thickness of 50 micrometers or more and 200 micrometers or less; wet-etching at least one surface of the base sheet to reduce the thickness of the base sheet; and irradiating a laser onto a portion of the portion in which the thickness of the base sheet has been reduced to form a plurality of penetration portions, wherein a mask body comprising the first portion and the second portion is defined, the thickness of the first portion is 5% or more and 50% or less of the total thickness of the mask body, and the thickness of the second portion is greater than 50% and less than 95% of the total thickness of the mask body. Claim 11 A method for manufacturing a deposition mask according to claim 10, wherein the base sheet comprises an upper surface and a lower surface facing the upper surface, and in the step of reducing the thickness of the base sheet, the lower surface is wet-etched, and in the step of forming a plurality of through-holes, the laser is irradiated onto the upper surface. Claim 12 A method for manufacturing a deposition mask according to claim 10, wherein the base sheet comprises an upper surface and a lower surface facing the upper surface, and in the step of reducing the thickness of the base sheet, the upper surface is wet-etched, and in the step of forming a plurality of through-holes, the laser is irradiated onto the upper surface. Claim 13 A method for manufacturing a deposition mask according to claim 10, wherein the base sheet comprises an upper surface and a lower surface facing the upper surface, and both the upper surface and the lower surface are wet-etched in the step of reducing the thickness of the base sheet, and the laser is irradiated onto the lower surface in the step of forming the plurality of through-holes. Claim 14 A method for manufacturing a deposition mask according to claim 10, wherein, in the step of forming the plurality of through-holes, the width of each of the plurality of through-holes is formed to be 10 millimeters or more and 400 millimeters or less. Claim 15 A method for manufacturing a display panel comprising: a step of preparing a target substrate; a step of forming and placing a deposition mask having a plurality of through-holes defined on the target substrate; a step of forming a plurality of deposition patterns corresponding to the through-holes on the target substrate; and a step of removing the deposition mask, wherein the step of forming the deposition mask comprises: a step of wet-etching at least one surface of a base sheet having a thickness of 50 micrometers or more and 200 micrometers or less to reduce the thickness of the base sheet; and a step of etching a portion of the portion of the base sheet with reduced thickness to form a plurality of through-holes, wherein the deposition mask comprises a first portion having a first through-hole defined therein; and a second portion having a second through-hole defined therein having a width smaller than the width of the first through-hole, and the width increasing as it is adjacent to the target substrate, wherein a mask body comprising the first portion and the second portion is defined, wherein the thickness of the first portion is 5% or more and 50% or less of the total thickness of the mask body, and the thickness of the second portion is greater than 50% and less than 95% of the total thickness of the mask body. Claim 16 delete Claim 17 A method for manufacturing a display panel according to claim 15, wherein the first portion defines the first penetration portion and includes a first side having a rounded shape in which the slope changes as it proceeds along the thickness direction. Claim 18 A method for manufacturing a display panel according to claim 15, wherein the second portion defines the second penetration portion and includes a second side angle inclined at a constant taper angle such that the thickness increases as it approaches the target substrate. Claim 19 A method for manufacturing a display panel according to claim 15, wherein the target substrate comprises a base substrate and a plurality of circuit element layers disposed on the base substrate, and the plurality of deposition patterns are a common layer disposed on each of the plurality of circuit element layers. Claim 20 In claim 19, the plurality of circuit element layers include a first circuit element layer and a second circuit element layer spaced apart from each other in a plane, and the plurality of deposition patterns include a first deposition pattern disposed on the first circuit element layer and a second deposition pattern disposed on the second circuit element layer, and the first deposition pattern and the second deposition pattern are spaced apart from each other in a plane.

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