Substrate processing apparatus and substrate processing method

Abstract

A treatment film with a uniform film thickness is formed on a substrate. A substrate treatment device for forming a treatment film on the surface of a substrate has a spin chuck (21) as a substrate holding part that holds a substrate coated with a treatment liquid before drying to form a treatment film, and a gas supply part (40) that supplies a first gas (F1) at a first temperature higher than room temperature to the periphery of the surface of the substrate held in the substrate holding part.

Description

Technology Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Patent document 1 describes removing a convex portion by supplying a solvent of a coating liquid to a convex portion of a coating film formed on the surface periphery of a substrate. Prior art literature

[0003] Japanese Patent Publication No. 2020-181855 The problem to be solved

[0004] The present disclosure provides a technique for forming a processed film with uniform film thickness on a substrate. means of solving the problem

[0005] A substrate processing apparatus according to one aspect of the present disclosure is a substrate processing apparatus for forming a processing film on the surface of a substrate, and has a substrate holding portion for holding a substrate coated with a processing liquid prior to drying for forming the processing film, and a gas supply portion including a first nozzle portion for supplying a first gas at a temperature higher than room temperature to a peripheral portion of the surface of the substrate held by the substrate holding portion. Effects of the invention

[0006] According to the present disclosure, a technique for forming a processed film with uniform film thickness on a substrate is provided. Brief explanation of the drawing

[0007] Figure 1 is a perspective view showing an example of a substrate processing system. Figure 2 is a side view schematically showing an example of the interior of a substrate processing system. Figure 3 is a schematic diagram showing an example of a coating unit. FIG. 4 is a schematic diagram showing an example of a gas supply nozzle in a coating unit. Figures 5(a) and 5(b) are schematic diagrams showing an example of the opening of a gas supply nozzle. Figure 6 is a schematic diagram showing an example of control of a gas supply unit by a control device. Figure 7 is a block diagram showing an example of the hardware configuration of a control device. Figure 8 is a flowchart showing an example of a substrate processing method. Figure 9 (a) is a figure showing an example of the formation state of a hump, and Figure 9 (b) is a figure showing an example of the result of treatment by a coating unit. FIG. 10 (a) and FIG. 10 (b) are figures showing an example of a modified application unit. FIG. 11 is a figure showing an example of a modified application unit. FIG. 12 is a figure showing an example of a modified application unit. Specific details for implementing the invention

[0008] Various exemplary embodiments are described below.

[0009] In one exemplary embodiment, the substrate processing device is a substrate processing device for forming a processing film on the surface of a substrate, and has a substrate holding part that holds a substrate coated with a processing liquid before drying to form the processing film, and a gas supply part that includes a first nozzle part that supplies a first gas at a temperature higher than room temperature to a peripheral part of the surface of the substrate held in the substrate holding part.

[0010] According to the above-described substrate processing apparatus, a first gas at a first temperature higher than room temperature is supplied to the peripheral portion of the surface of a substrate held in a substrate holding portion. As the first gas is supplied, the processing liquid is dried while in contact with the first gas at the peripheral portion of the substrate, thereby suppressing the formation of humps at the peripheral portion. Because of this, it becomes possible to form a processing film with a uniform film thickness on the substrate.

[0011] The above gas supply unit may be a sun that intermittently supplies the first gas to each position of the peripheral portion of the substrate.

[0012] By configuring the first gas to be supplied intermittently, the formation of humps at the periphery is further suppressed, making it possible to form a processed film with a more uniform film thickness on the substrate.

[0013] The first nozzle part may be configured to supply the first gas to the periphery of the substrate from above the periphery of the substrate.

[0014] By supplying a first gas to the periphery from above the periphery through the first nozzle section, the formation of a hump at the periphery is further suppressed, making it possible to form a processed film with a more uniform film thickness on the substrate.

[0015] The above gas supply unit may be configured to alternately supply the first gas and a second gas at a second temperature lower than the first temperature to each position of the peripheral portion of the substrate.

[0016] By alternately supplying a first gas and a second gas at a second temperature lower than the first temperature to each location of the periphery, the drying speed of the treatment liquid in the periphery is adjusted, and since the formation of humps in the periphery is suppressed, it becomes possible to form a treatment film with a more uniform film thickness on the substrate.

[0017] The above gas supply unit may be a solar unit capable of simultaneously supplying the first gas and the second gas to different locations on the surface of the substrate.

[0018] The gas supply unit can simultaneously supply the first gas and the second gas to different locations on the surface of the substrate, thereby enabling rapid supply of the first gas and the second gas to each location on the substrate.

[0019] The above gas supply unit may further have a second nozzle unit for supplying the second gas provided above the periphery of the substrate.

[0020] By having a separate second nozzle section, the supply of the first gas and the second gas can be performed independently.

[0021] The first nozzle part and the second nozzle part may each have a plurality of such parts, and above the periphery of the substrate, the first nozzle part and the second nozzle part may be alternately arranged along the periphery.

[0022] In the case where a first nozzle part and a second nozzle part are alternately arranged along the periphery part above the periphery part of the substrate, a configuration for alternately supplying the first gas and the second gas can be realized simply. For example, by moving the substrate relatively along the extension direction of the periphery part, a configuration for alternately supplying the first gas and the second gas to each position of the periphery part can be realized.

[0023] The sun may also have a first pipe that supplies the first gas to the first nozzle section, a first temperature control section that adjusts the temperature of the gas flowing through the first pipe to the first temperature, a second pipe that supplies the second gas to the second nozzle section, and a second temperature control section that adjusts the gas flowing through the second pipe to the second temperature.

[0024] By configuring as above, the temperature control of the first gas and the second gas can be performed independently.

[0025] The first nozzle part may be configured to alternately supply the first gas and the second gas to the surface of the substrate.

[0026] By configuring as above, the first gas and the second gas can be supplied alternately from one nozzle part, and the first gas and the second gas can be supplied to each location of the substrate by one nozzle.

[0027] The apparatus may have a pipe that supplies the gas to the first nozzle section and a temperature control unit that adjusts the temperature of the gas supplied from the first nozzle section to the substrate, wherein the temperature control unit adjusts the temperature of the gas supplied to the substrate by switching the temperature of the gas flowing through the pipe between the first temperature and the second temperature.

[0028] By configuring as above, the first gas and the second gas can be prepared and supplied by temperature control using a single temperature control unit.

[0029] The above temperature control unit may be configured to switch the temperature of the gas flowing through the pipe between the first temperature and the second temperature by switching the power of the heater that heats the gas flowing through the pipe to the on and off states.

[0030] In addition, the temperature control unit may be configured to switch the temperature of the gas flowing through the pipe to the first temperature and the second temperature by changing the setting of the heater that heats the gas flowing through the pipe.

[0031] The apparatus may have a first pipe that supplies the first gas to the first nozzle section, a second pipe that supplies the second gas to the first nozzle section, and a temperature control unit that adjusts the temperature of the gas supplied from the first nozzle section to the substrate, wherein the temperature control unit adjusts the temperature of the gas supplied to the substrate by switching the pipe that supplies the gas to the first nozzle section between the first pipe and the second pipe.

[0032] By configuring as above, the switching between the first gas and the second gas can be performed quickly simply by switching the piping supplying gas to the first nozzle section.

[0033] The above substrate holding part may be a solar element, which is a rotating mechanism that adsorbs the substrate and rotates it horizontally.

[0034] In addition, the apparatus may further have a cup arranged to surround the substrate supported in the substrate holding portion, and the gas supply portion may supply the first gas to the peripheral portion of the surface of the substrate from a supply port mounted in the cup.

[0035] In addition, the substrate holding part may be a sun, which is a conveying mechanism that conveys the substrate in a horizontal direction.

[0036] In one exemplary embodiment, a substrate treatment method for forming a treatment film on the surface of a substrate comprises supplying a first gas at a temperature higher than room temperature to a peripheral portion of the surface of a substrate coated with a treatment liquid prior to drying for forming the treatment film.

[0037] According to the above substrate processing method, a first gas at a first temperature higher than room temperature is supplied to the periphery of the surface of the substrate. As the first gas is supplied, the processing liquid at the periphery of the substrate is dried while in contact with the first gas, thereby suppressing the formation of humps at the periphery. Because of this, it becomes possible to form a processing film with a uniform film thickness on the substrate.

[0038] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, identical or substantial parts in each drawing are given the same reference numerals.

[0039] [Substrate Processing System]

[0040] The substrate processing system (1) shown in FIG. 1 is a system that performs the formation of a photosensitive film, exposure of the photosensitive film, and development of the photosensitive film on a work (W). The work (W) to be processed is, for example, a substrate, or a substrate in which a film and circuit, etc. are formed by performing a predetermined process. The substrate included in the work (W) is, for example, a wafer containing silicon. The work (W) (substrate) may be formed in a circular shape. The work (W) to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc., or an intermediate obtained by performing a predetermined process on these substrates, etc. The photosensitive film is, for example, a resist film.

[0041] A substrate processing system (1) comprises a coating and developing device (2), an exposure device (3), and a control device (100) (control unit). The exposure device (3) is a device for exposing a resist film (photosensitive film) formed on a work (W) (substrate). Specifically, the exposure device (3) irradiates an energy line onto the portion of the resist film to be exposed by a method such as immersion exposure. The coating and developing device (2) performs a process to form a resist film by applying a resist (processing liquid) to the surface of the work (W) before the exposure process by the exposure device (3), and performs a development process of the resist film after the exposure process.

[0042] Substrate processing device

[0043] Hereinafter, as an example of a substrate processing device, the configuration of a coating and developing device (2) will be described. As shown in FIGS. 1 and 2, the coating and developing device (2) comprises a carrier block (4), a processing block (5), and an interface block (6).

[0044] The carrier block (4) introduces a work (W) into the coating / developing device (2) and extracts a work (W) from the coating / developing device (2). For example, the carrier block (4) can support a plurality of carriers (C) for the work (W) and has a conveying device (A1) including a conveying arm built in. The carrier (C) accommodates, for example, a plurality of circular work (W). The conveying device (A1) extracts the work (W) from the carrier (C) and passes it to the processing block (5), and receives the work (W) from the processing block (5) and returns it to the carrier (C). The processing block (5) has a plurality of processing modules (11, 12, 13, 14).

[0045] The processing module (11) incorporates a coating unit (U1), a heat treatment unit (U2), and a conveying device (A3) for conveying the work (W) to these units. The processing module (11) forms a lower film on the surface of the work (W) by means of the coating unit (U1) and the heat treatment unit (U2). The coating unit (U1) applies a treatment liquid for forming the lower film onto the work (W). The heat treatment unit (U2) performs various heat treatments accompanying the formation of the lower film.

[0046] The processing module (12) incorporates a coating unit (U1), a heat treatment unit (U2), and a conveying device (A3) for conveying the work (W) to these units. The processing module (12) performs liquid treatment including forming a resist film on a lower film by means of the coating unit (U1) and the heat treatment unit (U2). The coating unit (U1) applies a treatment liquid (resist) for forming a resist film onto the lower film. The heat treatment unit (U2) performs various heat treatments accompanying the formation of the film. Additionally, the coating unit (U1) has the function of forming a protective film (treatment film) by the resist liquid on the periphery of the work (W).

[0047] The processing module (13) incorporates a coating unit (U1), a heat treatment unit (U2), and a conveying device (A3) for conveying a workpiece (W) to these units. The processing module (13) forms an upper layer film on the resist film by means of the coating unit (U1) and the heat treatment unit (U2). The coating unit (U1) applies a liquid for forming the upper layer film onto the resist film. The heat treatment unit (U2) performs various heat treatments accompanying the formation of the upper layer film.

[0048] The processing module (14) incorporates a coating unit (U1), a heat treatment unit (U2), and a conveying device (A3) for conveying the work (W) to these units. The processing module (14) performs a development treatment of the resist film that has undergone exposure treatment and a heat treatment accompanying the development treatment by the coating unit (U1) and the heat treatment unit (U2). The coating unit (U1) performs a development treatment of the resist film by applying a developer solution onto the surface of the work (W) that has finished exposure and then washing it off with a rinse solution. The heat treatment unit (U2) performs various heat treatments accompanying the development treatment. Specific examples of heat treatments include heat treatment before development (PEB: Post Exposure Bake) and heat treatment after development (PB: Post Bake).

[0049] A shelf unit (U10) is provided on the carrier block (4) side within the processing block (5). The shelf unit (U10) is divided into a plurality of cells arranged in an up-and-down direction. A conveying device (A7) including a lifting arm is provided near the shelf unit (U10). The conveying device (A7) raises and lowers a workpiece (W) between the cells of the shelf unit (U10).

[0050] A shelf unit (U11) is provided on the side of the interface block (6) within the processing block (5). The shelf unit (U11) is divided into a plurality of cells arranged in an up-and-down direction.

[0051] The interface block (6) performs the transfer of a work (W) between itself and the exposure device (3). For example, the interface block (6) incorporates a conveyor device (A8) including a conveyor arm and is connected to the exposure device (3). The conveyor device (A8) transfers the work (W) placed on the shelf unit (U11) to the exposure device (3). The conveyor device (A8) receives the work (W) from the exposure device (3) and returns it to the shelf unit (U11).

[0052] (Application Unit)

[0053] The coating unit (U1) of the processing module (12) will be described in detail. As shown in FIG. 3, the coating unit (U1) of the processing module (12) includes a spin chuck (21) (substrate holding part), a rotary driving part (22), a support pin (23), a guide ring (25), a cup (26), an exhaust pipe (28), and a drain port (29). In addition, the coating unit (U1) includes a processing liquid supply part (31). The processing liquid supply part (31) has the function of supplying a processing liquid for forming a resist film on the surface of the workpiece (W). In addition, the coating unit (U1) further includes a gas supply part (40).

[0054] The spin chuck (21) holds the workpiece (W) horizontally. The spin chuck (21) is connected to a rotational drive unit (22) via a shaft extending in the vertical direction. The rotational drive unit (22) rotates the spin chuck (21) at a predetermined rotational speed based on a control signal output from the control device (100).

[0055] The support pin (23) is a pin capable of supporting the back surface of the work (W), and, for example, three are provided around the shaft of the spin chuck (21). The support pin (23) can be raised and lowered by a lifting mechanism (not shown). The work (W) is transferred between the work (W) conveying mechanism (not shown) and the spin chuck (21) by the support pin (23).

[0056] A guide ring (25) is provided below a workpiece (W) held by a spin chuck (21) and has the function of guiding the processing liquid supplied to the surface of the workpiece (W) toward a drain port. Additionally, a cup (26) is provided to surround the outer circumference of the guide ring (25) to suppress splashing of the processing liquid. The upper part of the cup (26) is open so that the workpiece (W) can be transferred to the spin chuck (21). Additionally, the upper end (26a) of the cup (26) is located above the workpiece (W). A space (27) that serves as a liquid discharge path is formed between the circumference of the cup (26) and the outer circumference of the guide ring (25). Additionally, below the cup (26), an exhaust pipe (28) having an exhaust port (28a) and a drain port (29) for discharging the liquid moving through the space (27) are provided.

[0057] The processing liquid supply unit (31) discharges the processing liquid from above the work (W) supported by the spin chuck (21) toward the surface of the work (W).

[0058] The treatment liquid supply unit (31) is configured to include a nozzle (31a), a treatment liquid supply source (31b), and a pipe (31c). An opening / closing valve controlled by a control device (100) may be provided on the pipe (31c) of the treatment liquid supply unit (31). The supply / stopping of the treatment liquid may be switched by switching the open state and the closed state of the opening / closing valve based on a control signal from the control device (100). As for the treatment liquid supplied from the treatment liquid supply unit (31), for example, a treatment liquid (for example, a resist liquid) used when forming a protective film on the periphery of a workpiece (W) may be used.

[0059] The nozzle (31a) of the processing liquid supply unit (31) is mounted, for example, on an arm extending in a horizontal direction, and is made movable in a horizontal direction. In addition, the nozzle (31a) is also made movable in an up-and-down direction. That is, although not shown in FIG. 3, the coating unit (U1) is provided with a moving mechanism to move the nozzle (31a) in the horizontal and up-and-down directions. And, by the operation of the moving mechanism, the nozzle (31a) can move between a standby position outside the cup (26) and on the work (W).

[0060] The gas supply unit (40) has the function of supplying gas toward the periphery of the work (W). The supply of gas by the gas supply unit (40) is performed for the purpose of controlling the surface shape of the processing liquid (resist liquid) supplied to the surface of the work (W). The gas supply unit (40) supplies a first gas (F1) and a second gas (F2) as two types of gases with different temperatures. For this reason, the gas supply unit (40) is configured to include a first gas supply unit (41) and a second gas supply unit (42). In addition, the temperature of the first gas (F1) is referred to as the first temperature, and the temperature of the second gas (F2) is referred to as the second temperature. In the coating unit (U1), the drying state of the processing liquid at the periphery of the work (W) is adjusted by alternately supplying the first gas (F1) and the second gas (F2) to each position at the periphery of the surface of the work (W).

[0061] The first gas supply unit (41) is configured to include a nozzle (41a) (first nozzle unit), a pipe (41b) (first pipe), a temperature control unit (41c) (first temperature control unit), an opening / closing valve (41d), and a gas supply source (45). Additionally, the gas supply source (45) functions as the gas supply source (45) of the second gas supply unit (42). The temperature control unit (41c) and the opening / closing valve (41d) are provided on the pipe (41b). The temperature control unit (41c) introduces gas flowing through the pipe (41b), performs temperature control, and then supplies the gas to the downstream pipe (41b). Additionally, the opening / closing valve (41d) has the function of switching the supply / stop of gas by switching between an open state and a closed state.

[0062] The second gas supply unit (42) is configured to include a nozzle (42a) (second nozzle unit), a pipe (42b) (second pipe), a temperature control unit (42c) (second temperature control unit), an opening / closing valve (42d), and a gas supply source (45), just like the first gas supply unit (41). The temperature control unit (42c) and the opening / closing valve (42d) are provided on the pipe (42b). The temperature control unit (42c) introduces gas flowing through the pipe (42b), and supplies the gas after temperature control to the downstream pipe (42b). Additionally, the opening / closing valve (42d) has the function of switching the supply / stop of gas by switching between an open state and a closed state.

[0063] When the same type of gas is supplied as the first gas (F1) and the second gas (F2), the gas supply source (45) may be shared. As the first gas (F1) and the second gas (F2), inert gases such as nitrogen (N2) and argon (Ar) may be used. In addition, the first gas (F1) and the second gas (F2) may be different gases. In that case, the gas supply source of the first gas supply unit (41) and the gas supply source of the second gas supply unit (42) are prepared separately.

[0064] The first gas (F1) and the second gas (F2) have different temperatures when supplied to the workpiece (W). For example, the temperature of the first gas (F1) may be set to 50°C to 200°C (hot air) and the temperature of the second gas (F2) may be set to 15°C to 30°C (cold air). At least, the temperature of the first gas (F1) is set higher than ambient temperature (the atmosphere temperature within the processing space where the workpiece (W) is placed is defined as 'ambient temperature'). In this embodiment, the explanation is based on the premise that the temperature of the first gas (F1) is higher than that of the second gas (F2).

[0065] In FIG. 3, a schematic representation is shown in which the nozzle (42a) of the second gas supply unit (42) is positioned inside the work (W) relative to the nozzle (41a) of the first gas supply unit (41), and the first gas (F1) and the second gas (F2) are supplied alternately to each position of the peripheral portion (W1) (see FIG. 4) of the work (W). Accordingly, the actual arrangement of the nozzles (41a, 42a) is different from the form shown in FIG. 3.

[0066] For example, the nozzles (41a, 42a) may be mounted, for example, on an arm extending in a horizontal direction, and may be movable in the horizontal and vertical directions. For example, a movement mechanism may be provided for moving the nozzles (41a, 42a) in the horizontal and vertical directions, respectively. Additionally, by the operation of the movement mechanism, the nozzles (41a, 42a) may be movable between a standby position outside the cup (26) and on the work (W).

[0067] In addition, instead of providing nozzles (41a, 42a) individually, a gas supply nozzle (50) in which nozzles (41a, 42a) are integrated may be used. FIG. 4 shows an example of a gas supply nozzle (50). FIG. 5 also schematically shows an example of a configuration near the discharge port of the gas supply nozzle (50).

[0068] The gas supply nozzle (50) is configured to include a ring-shaped main body (51) and four nozzle parts (52a, 52b, 52c, 52d). The nozzle parts (52a, 52c) function as nozzles (41a) that supply a first gas (F1), and the nozzle parts (52b, 52d) function as nozzles (42a) that supply a second gas (F2).

[0069] The main body (51) is a ring-shaped structure having a diameter corresponding to the outer circumference of the work (W), and is sized to overlap with the peripheral portion (W1) of the work (W) when viewed in a plane. Inside the main body (51), a flow path connected to a pipe (41b) related to the first gas (F1) and a flow path connected to a pipe (42b) related to the second gas (F2) are provided. FIG. 3 schematically shows the state in which pipes (41b, 42b) are connected to the upper part of the main body (51), but the connection position between the gas supply nozzle (50) and the pipes (41b, 42b) is not particularly limited, and the shape of the internal flow path may change depending on the connection position.

[0070] When supplying the first gas (F1) and the second gas (F2) to the work (W), the main body (51) is positioned so as to overlap with the work (W) when viewed from a plane above the work (W), as shown in FIG. 4. Also, FIG. 4 shows the gas supply nozzle (50) and the work (W) separated in the vertical direction, but when supplying the first gas (F1) and the second gas (F2), the gas supply nozzle (50) is closer to the work (W) than in FIG. 4.

[0071] The nozzle parts (52a, 52b, 52c, 52d) are mounted on the lower side of the main body (51) and are arranged at equal intervals, for example, on the circumference so that the nozzle parts (52a, 52b, 52c, 52d) are arranged in this order along the circumferential direction. In the example shown in FIG. 4, the nozzle parts (52a, 52c) are positioned opposite each other with the center of the main body (51) (corresponding to the center of the work (W)) in between, and the nozzle parts (52b, 52d) are positioned opposite each other with the center of the main body (51) (corresponding to the center of the work (W)) in between. The nozzle parts (52a, 52b, 52c, 52d) all have an arc shape that follows the annular main body (51). In addition, the lengths of the nozzle parts (52a, 52b, 52c, 52d) following the arc shape are not particularly limited and can be appropriately changed within a range where the nozzle parts (52a, 52b, 52c, 52d) do not overlap each other.

[0072] The nozzle portions (52a, 52b, 52c, 52d) each have a shape that is open downward to supply the first gas (F1) or the second gas (F2) to the work (W).

[0073] FIGS. 5(a) and FIGS. 5(b) illustrate examples of an opening (52x) formed on the lower surface of a nozzle part (52a). FIGS. 5(a) illustrates an example where the opening (52x) is a slit shape extending along the long direction of an arc-shaped nozzle part (52a). FIGS. 5(b) illustrates an example where the opening (52x) is a shape formed by combining a plurality of small holes (52y) arranged along the long direction of an arc-shaped nozzle part (52a). The shape of the opening (52x) of the nozzle part (52a) may be a slit shape as shown in FIGS. 5(a), a shape formed by arranging a plurality of small holes as shown in FIGS. 5(b), or a shape formed by combining these. Also, in FIG. 5, a nozzle part (52a) is illustrated, but nozzle parts (52b to 52d) also have the same opening (52x) as the nozzle part (52a) shown in FIG. 4.

[0074] In the gas supply nozzle (50), nozzle sections (52a to 52d) having an opening (52x) as shown in FIG. 4 are arranged in an annular shape as shown in FIG. 4 below the main body (51). The gas supply systems for the first gas (F1) and the second gas (F2) for this gas supply nozzle (50) are independent of each other as shown in FIG. 4. Because of this, the gas supply nozzle (50) can simultaneously supply the first gas (F1) from the nozzle sections (52a, 52c) and supply the second gas (F2) from the nozzle sections (52b, 52d).

[0075] When the nozzle sections (52a to 52d) each supply the first gas (F1) or the second gas (F2), and the workpiece (W) placed below is rotated, each position (each point) of the peripheral section (W1) of the workpiece (W) passes sequentially through the lower portion of the nozzle sections (52a to 52d). The first gas (F1) and the second gas (F2) supplied from the gas supply nozzle (50) come into alternating contact. This state continues as long as the rotation of the workpiece (W) continues.

[0076] The control device (100) controls the coating / developing device (2). The control device (100) performs liquid treatment on the workpiece (W) by the processing module (12) according to predetermined conditions. For example, the control device (100) supplies a processing liquid to the workpiece (W) by the processing liquid supply unit (31) based on predetermined conditions, and also controls the rotation of the workpiece (W) at that time. In addition, the control device (100) controls the temperature control unit (41c) and the opening / closing valve (41d) of the first gas supply unit (41) and the temperature control unit (42c) and the opening / closing valve (42d) of the second gas supply unit (42), as shown in FIG. 6. For example, it controls each part of the first gas supply unit (41) and each part of the second gas supply unit (42) while controlling the rotation of the workpiece (W) based on the conditions of the treatment.

[0077] The control device (100) may be composed of a plurality of functional modules for performing the above liquid processing. Each functional module is not limited to being realized by the execution of a program, and may be realized by a dedicated electrical circuit (e.g., a logic circuit) or by an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates the same.

[0078] The hardware of the control device (100) may be configured, for example, by one or more control computers. The control device (100) includes a circuit (201) as a hardware configuration, as shown in FIG. 7. The circuit (201) may be composed of electrical circuit elements. The circuit (201) may include a processor (202), memory (203), storage (204), a driver (205), and an input / output port (206).

[0079] The processor (202) executes a program in cooperation with at least one of the memory (203) and storage (204) and performs input and output of signals via the input / output port (206), thereby constituting each of the above-described function modules. The memory (203) and storage (204) store various information and programs used in the control device (100). The driver (205) is a circuit that drives each of the various devices of the coating / developing device (2). The input / output port (206) performs input and output of signals between the driver (205) and each part constituting the coating / developing device (2).

[0080] The substrate processing system (1) may have a single control device (100) or may have a controller group (control unit) composed of multiple control devices (100). If the substrate processing system (1) has a controller group, for example, each of the multiple function modules may be realized by a single different control device or by a combination of two or more control devices (100). If the control device (100) is composed of multiple computers (circuits (201)), each of the multiple function modules may be realized by a single computer (circuit (201)). Additionally, the control device (100) may be realized by a combination of two or more computers (circuits (201)). The control device (100) may have multiple processors (202). In this case, each of the multiple function modules may be realized by a single processor (202) or by a combination of two or more processors (202). Some of the functions of the control device (100) of the substrate processing system (1) may be provided in a device different from the substrate processing system (1), and may also be connected to the substrate processing system (1) via a network to realize various operations in this embodiment. For example, if the functions of the processor (202), memory (203), and storage (204) of a plurality of substrate processing systems (1) are combined and realized in one or more separate devices, it becomes possible to remotely manage and control the information and operations of a plurality of substrate processing systems (1) collectively.

[0081] The processing of a work (W) executed in the above-described substrate processing system (1) is described. The control device (100) controls the coating and developing device (2) to perform processing on the work (W) in, for example, the following sequence. First, the control device (100) controls the conveying device (A1) to convey the work (W) in the carrier (C) to the shelf unit (U10), and controls the conveying device (A7) to place the work (W) into a cell for the processing module (11).

[0082] Next, the control device (100) controls the conveying device (A3) to convey the work (W) of the shelf unit (U10) to the coating unit (U1) and the heat treatment unit (U2) within the processing module (11). Additionally, the control device (100) controls the coating unit (U1) and the heat treatment unit (U2) to form a lower film on the surface of the work (W). Afterward, the control device (100) controls the conveying device (A3) to return the work (W) with the lower film formed to the shelf unit (U10), and controls the conveying device (A7) to place the work (W) in the processing module (12).

[0083] Next, the control device (100) controls the conveying device (A3) to convey the work (W) of the shelf unit (U10) to the coating unit (U1) and the heat treatment unit (U2) within the processing module (12). The control device (100) controls the coating unit (U1) and the heat treatment unit (U2) to form a resist film on the lower layer film of the work (W). An example of a liquid treatment method performed in the processing module (12) will be described later. Afterward, the control device (100) controls the conveying device (A3) to return the work (W) to the shelf unit (U10), and controls the conveying device (A7) to place the work (W) into a cell for the processing module (13).

[0084] Next, the control device (100) controls the conveying device (A3) to convey the work (W) of the shelf unit (U10) to the coating unit (U1) and the heat treatment unit (U2) within the processing module (13). Additionally, the control device (100) controls the coating unit (U1) and the heat treatment unit (U2) to form an upper layer film on the resist film of the work (W). Afterward, the control device (100) controls the conveying device (A3) to convey the work (W) to the shelf unit (U11).

[0085] Next, the control device (100) controls the transport device (A8) to send the work (W) received in the shelf unit (U11) to the exposure device (3). Then, in the exposure device (3), exposure treatment is performed on the resist film formed on the work (W). Afterward, the control device (100) receives the work (W) that has undergone exposure treatment from the exposure device (3) and controls the transport device (A8) to place the work (W) into a cell for the processing module (14) in the shelf unit (U11).

[0086] Next, the control device (100) controls the conveying device (A3) to convey the work (W) of the shelf unit (U11) to the heat treatment unit (U2) of the processing module (14). Then, the control device (100) controls the coating unit (U1) and the heat treatment unit (U2) to perform heat treatment accompanying the development process and the development process. By doing so, the control device (100) finishes the substrate processing for one work (W).

[0087] [Substrate Processing Method]

[0088] Next, an example of a substrate processing method performed in the processing module (12) is described. Here, as a substrate processing method, a method of forming a resist film on the peripheral portion (W1) of the surface of the work (W) is described.

[0089] FIG. 8 is a flowchart showing an example of the sequence of processes for forming a resist film on the surface of a work (W).

[0090] As shown in FIG. 8, the control device (100) executes step (S01). In step (S01), the control device (100) controls the support pin (23) of the conveying device (A3) and the coating unit (U1) and supports the workpiece (W) on the spin chuck (21) in the coating unit (U1). Afterward, the control device (100) starts rotating the workpiece (W) by driving the rotation drive unit (22). As an example, the rotation speed of the workpiece (W) at this time is approximately 100 rpm to 2000 rpm.

[0091] Next, the control device (100) executes step (S02). In step (S02), the control device (100) controls the processing liquid supply unit (31) while the workpiece (W) is rotated by driving the rotary drive unit (22) to discharge the processing liquid from the nozzle (31a) toward the center of the surface of the workpiece (W). The solvent supplied to the center of the surface of the workpiece (W) spreads out in the diameter direction of the workpiece (W) due to the rotation of the workpiece (W). As a result, a state is formed in which the processing liquid (resist liquid) is attached to the entire surface of the workpiece (W). The control device (100) stops the discharge of the processing liquid from the processing liquid supply unit (31) at the timing when a predetermined amount of processing liquid is discharged from the nozzle (31a).

[0092] Afterward, the control device (100) executes step (S03). In step (S03), the control device (100) controls the first gas supply unit (41) and the second gas supply unit (42) of the gas supply unit (40) to supply the first gas (F1) (hot air) and the second gas (F2) (cold air) to the main part (W1) of the work (W). Specifically, the control device (100) executes the supply of the first gas (F1) from the first gas supply unit (41) of the gas supply unit (40) and the supply of the second gas (F2) from the second gas supply unit (42) while the work (W) is rotated by driving the rotary drive unit (22). As a result, a first gas (F1) is supplied from the nozzle section (52a, 52c) which functions as the nozzle (41a) among the gas supply nozzles (50), and a second gas (F2) is supplied from the nozzle section (52b, 52d) which functions as the nozzle (42a). Accordingly, each position of the peripheral section (W1) of the work (W) comes into alternating contact with the first gas (F1) and the second gas (F2). In addition, the supply amount of the first gas (F1) and the second gas (F2) in step (S03) may be adjusted, for example, so that the wind speed from the nozzle section (52a ~ 52d) is 0.05 m / sec ~ 1 m / sec. The wind speeds from the nozzle section (52a ~ 52d) may be different from each other.

[0093] In addition, the rotational speed of the workpiece (W) can be adjusted such that, for example, for each position of the peripheral part (W1) of the workpiece (W), the first gas (F1) (hot air) and the second gas (F2) (cold air) are supplied alternately, for example, every 1 second to 10 seconds. As an example, the supply of the first gas (F1) (hot air) for about 5 seconds and the supply of the second gas (F2) (cold air) for about 5 seconds may be repeated alternately. In addition, the supply times of the first gas (F1) (hot air) and the second gas (F2) (cold air) may be different from each other.

[0094] The above step (S03) volatilizes volatile components in the treatment liquid supplied to the surface of the workpiece (W). That is, step (S03) can function as a process for drying and solidifying the treatment liquid. By undergoing this treatment, the treatment liquid supplied to the surface of the workpiece (W) is dried, and a treatment film (resist film) is formed. Step (S03) can be performed at least until the surface of the treatment liquid is solidified and its shape is stabilized.

[0095] Next, the control device (100) executes step (S04). In step (S04), the control device (100) waits with the rotation of the workpiece (W) and the supply of gas from the gas supply unit (40) executed until a predetermined time elapses. The above state continues until the predetermined time elapses (during S04-NO). After the predetermined time has elapsed (S04-YES), the control device (100) terminates the rotation of the workpiece (W) and the supply of gas from the gas supply unit (40).

[0096] In addition, step (S03) (supply of the first gas (F1) (hot air) and the second gas (F2) (cold air)) may be performed after the treatment of step (S02) (discharge of the treatment liquid) as described above, but may also be performed partially simultaneously with step (S02) (discharge of the treatment liquid).

[0097] Among the above series of processes, in particular, by alternately supplying the first gas (F1) (hot air) and the second gas (F2) (cold air) to the peripheral portion (W1) of the work (W), the shape of the treatment film (e.g., a resist film) on the peripheral portion (W1) of the surface of the work (W) changes. FIG. 9 is a diagram illustrating the change in the treatment liquid (R) supplied to the peripheral portion (W1) of the work (W), and is an enlarged view of the area near the peripheral portion of the work (W). FIG. 9 (a) shows an example in which, instead of supplying the first gas (F1) (hot air) and the second gas (F2) (cold air), the back surface of the work (W) is heated by a heater to volatilize the solvent component of the treatment liquid (R) and dry the treatment liquid (R). The processing liquid (R) (resist liquid) forming the resist film is supplied to the center of a rotating workpiece (W), for example, as described above, and diffuses to the periphery (W1) of the workpiece (W) using centrifugal force. At this time, a hump (R1) formed by the resist liquid may be formed at the periphery (W1) of the workpiece (W). The hump (R1) is an area (protrusion) that rises extremely high relative to other areas and can be formed in a ring shape on the outer edge of the processing liquid (R) diffused on the workpiece (W). It is assumed that the hump (R1) is formed by Marangoni convection in the processing liquid applied to the surface of the workpiece (W).

[0098] Marangoni convection is a flow that occurs within the processing liquid (R) remaining on the surface of the workpiece (W) (inside the liquid that becomes the resist film), and when the processing liquid volatilizes, the processing liquid moves in the transverse direction (horizontal direction) toward the part that forms the outline of the processing liquid (R). Fig. 9 (a) schematically shows an example of a hump (R1) being formed by Marangoni convection occurring near the periphery (W1) of the workpiece (W). In addition, when the workpiece (W) is heated by a heater (H) provided on the back side of the workpiece (W), Marangoni convection is more likely to occur because a temperature difference is created in the processing liquid (R) between the part close to the surface of the workpiece (W) and the part separated from the workpiece (W). When Marangoni convection occurs in the treatment liquid (R) on the work (W), solid components constituting the treatment liquid (e.g., resin particles in the case of a resist liquid) move along with this convection to the area that forms the outline of the treatment liquid (R). The area that forms the outline of the treatment liquid (R) corresponds to the periphery (W1) of the work (W). As solid components in the treatment liquid (R) are concentrated and precipitated at the periphery (W1) of the work (W), a hump (R1) with a greater thickness than other areas may be formed, as shown in FIG. 9 (a). When the treatment liquid (R) is dried in this state, a treatment film (e.g., a resist film) is formed by the treatment liquid while the hump (R1) remains. This phenomenon is also called the coffee stain phenomenon and can occur when a liquid is dried and solidified.

[0099] In this regard, in the method described in the present embodiment, Marangoni convection is suppressed by changing the drying method of the treatment liquid (R) (the method of volatilizing the solvent in the treatment liquid). FIG. 9(b) schematically illustrates a method of alternately contacting the first gas (F1) (hot air) and the second gas (F2) (cold air) with the treatment liquid (R) on the workpiece (W) as described in the present embodiment. In this case, the occurrence of Marangoni convection in the treatment liquid remaining on the surface of the workpiece (W) can be suppressed. Even if Marangoni convection occurs, the first gas (F1) (hot air) and the second gas (F2) (cold air) are blown from above toward the surface of the workpiece (W) at the periphery (W1) of the workpiece (W). Because of this, the concentration and precipitation of solid components in the treatment liquid (R) at the periphery (W1) of the workpiece (W) is prevented. As a result, as shown in FIG. 9(b), the formation of a hump (R1) in the peripheral portion (W1) of the work (W) is suppressed. That is, by supplying the first gas (F1) (hot air) and the second gas (F2) (cold air), it becomes possible to form a shape such that the surface shape of the treatment film by the treatment liquid (R) becomes smooth.

[0100] In addition, in the above method, a first gas (F1) (hot air) and a second gas (F2) (cold air) are alternately supplied to each point of the main body (W1). In other words, the first gas (F1) (hot air) is supplied intermittently to each point of the main body (W1) of the workpiece (W). By configuring it in this way, it is possible to adjust the speed of solidification of the treatment liquid (R).

[0101] In order to rapidly dry the treatment liquid (R) by volatilizing the solvent in the treatment liquid (R), just as when the back surface of the work (W) is heated by a heater (H), a method of continuously supplying only the first gas (F1) (hot air) to the periphery (W1) of the work (W) is also considered. Even with this configuration, since the first gas (F1) is supplied to the periphery (W1) from above the work (W), the formation of a hump (R1) caused by the treatment liquid (R) at the periphery (W1) of the work (W) can be suppressed. Furthermore, compared to heating by a heater (H), the temperature difference (temperature deviation) within the treatment liquid (R) is reduced, so the formation of a hump (R1) is suppressed. However, if the configuration is such that the first gas (F1) (hot air) is continuously supplied to the surface of the work (W), the drying speed of the treatment liquid (R) (the volatilization speed of the solvent) increases. In this case, with respect to the peripheral portion (W1) of the work (W), the drying of the treatment liquid (R) may be faster compared to other areas, which may affect the smoothness of the surface shape of the treatment film on the surface of the work (W). Therefore, as described above, the speed of solidification of the treatment liquid (R) may be adjusted by intermittently supplying the first gas (F1) (hot air) to each point of the peripheral portion (W1) of the work (W).

[0102] In addition, as a method for intermittently supplying the first gas (F1) (hot air), a method of not supplying the second gas (F2) (cold air) may be used. That is, a configuration may be realized in which only the first gas (F1) (hot air) is intermittently supplied at each position of the peripheral part (W1) of the work (W) without supplying the second gas (F2) (cold air). As a method for realizing a configuration in which only the first gas (F1) (hot air) is intermittently supplied at each position of the peripheral part (W1) of the work (W) using a gas supply nozzle (50), for example, the first gas (F1) (hot air) can be supplied from all of the nozzle parts (52a to 52d). In this case, the first gas (F1) can be intermittently supplied to each position of the peripheral part (W1) of the work (W) by adjusting the rotation speed of the work (W).

[0103] (Variation example)

[0104] As described above, in order to suppress the formation of humps in the treatment film, it is sufficient to supply at least a first gas (F1) (hot air) to each location on the peripheral portion (W1) of the workpiece (W). Furthermore, if it is possible to intermittently supply the first gas (F1) (hot air) to each location on the peripheral portion (W1) of the workpiece (W), the formation of humps can be further suppressed. Below, as a modified example, a modified example of a configuration in which the first gas (F1) (hot air) is intermittently supplied to each location on the peripheral portion (W1) of the workpiece (W) will be described.

[0105] FIG. 10(a) is a diagram showing an example of changing the installation position of the nozzles (41a, 42a). In the above embodiment, an example of supplying the first gas (F1) and the second gas (F2) using the gas supply nozzle (50) has been described, but nozzles of other shapes may be used. FIG. 10(a) shows an example in which the nozzles (41a, 42a) are mounted on the top (26a) of the cup (26). Even in this case, by adjusting the arrangement of the nozzles (41a, 42a) so that the gas supplied from the opening of the nozzles (41a, 42a) is directed toward the periphery of the work (W), gas can be supplied to the periphery of the work (W) in the same way as the gas supply nozzle (50). Also, FIG. 10(a) shows only one nozzle, but of course, multiple nozzles may be provided.

[0106] FIG. 10(b) shows a gas supply nozzle (50X) with a modified shape relative to the gas supply nozzle (50). The gas supply nozzle (50X) differs from the gas supply nozzle (50) in that the nozzle portion for supplying the first gas (F1) and the second gas (F2) is arranged in an annular shape. That is, in the gas supply nozzle (50X), the main body functions substantially as a plurality of nozzle portions. Even in the gas supply nozzle (50X) having such a shape, the supply locations of the first gas (F1) and the second gas (F2) can be appropriately adjusted by adjusting the arrangement of the opening for supplying the first gas (F1) and the opening for supplying the second gas (F2). As an example, as shown in FIG. 10(b), the first gas (F1) and the second gas (F2) can be configured to be supplied alternately along the periphery (W1) of the work (W). Also, FIG. 10(b) shows a configuration in which the first gas (F1) and the second gas (F2) are supplied from four ring-shaped locations, respectively, but this number can be appropriately changed.

[0107] FIG. 11 is a diagram illustrating a configuration in which the configuration of the first gas supply unit (41) and the second gas supply unit (42) is realized as a single nozzle unit. FIG. 11 shows an example of a configuration in which the first gas (F1) (hot air) and the second gas (F2) (cold air) are alternately supplied to a downstream nozzle using a single pipe (46). In this case, the type of gas supplied from the nozzle provided downstream of the pipe (46) can be changed by controlling the temperature control unit (47) and the opening / closing valve (48) on the pipe (46) by the control device (100). As an example of controlling the temperature control unit (47), for instance, the temperature of the second gas (F2) may be adjusted by turning the heater of the temperature control unit (47) to the ON state and adjusting it to the OFF state. In addition, the temperature control unit (47) may be set to two types of temperatures: the temperature of the first gas (F1) and the temperature of the second gas (F2). In this way, when the first gas (F1) (hot air) and the second gas (F2) (cold air) are alternately supplied from one pipe (46), the temperature of the gas supplied from the nozzle may be controlled by switching the setting of one temperature control unit (47).

[0108] In addition, as a configuration for alternately supplying a first gas (F1) (hot air) and a second gas (F2) (cold air) from a single nozzle, a method using pipes (41b, 42b) corresponding to two types of gas may also be adopted. Specifically, as shown in FIG. 3, pipes (41b, 42b) corresponding to two types of gas may be provided respectively, and a switching valve may be further provided at the front end of the nozzle so that the gas supplied from the nozzle may be selected from the first gas (F1) (hot air) and the second gas (F2) (cold air). In this way, the method for supplying the first gas (F1) (hot air) and the second gas (F2) (cold air) to the peripheral part (W1) of the workpiece (W) can be appropriately changed.

[0109] FIG. 12 illustrates an example of a modified mechanism for holding a workpiece (W). In the above embodiment, a case was described in which a workpiece (W), which is a disc, is held horizontally by a spin chuck (21), and gas is supplied while rotating the workpiece (W). In addition, as a method for drying the workpiece (W) after supplying a processing liquid (R), there is a case in which gas is supplied while the workpiece (W) is conveyed horizontally. Specifically, as shown in FIG. 12, the workpiece (W) can be conveyed in a horizontal direction by a conveying mechanism (80). In this case, as shown in FIG. 12, nozzles (41a, 42a) are placed above the periphery (W1) of the conveyed workpiece (W). And, by supplying the first gas (F1) (hot air) and the second gas (F2) (cold air) from each nozzle, the first gas (F1) (hot air) and the second gas (F2) (cold air) can be alternately supplied to each position of the peripheral part (W1) of the work (W) being conveyed by the conveying mechanism (80).

[0110] Additionally, as shown in FIG. 12, if nozzles (41a, 42a) are alternately arranged along one side of the workpiece (W), the first gas (F1) (hot air) and the second gas (F2) (cold air) can be alternately supplied to each position of the side of the workpiece (W1). Also, as shown in FIG. 12, nozzles (41a, 42a) may be arranged so that they are long along the direction of movement of the workpiece (W). In this case, by adjusting the length of the long direction (the length of the area where the opening exists), the supply time of the first gas (F1) (hot air) and the second gas (F2) (cold air) for each position of the workpiece (W) can be adjusted. In addition, the conveying speed of the work (W) by the conveying mechanism (80) can also be used to adjust the supply time of the first gas (F1) (hot air) and the second gas (F2) (cold air).

[0111] [action]

[0112] According to the above-described substrate processing apparatus and substrate processing method, a first gas (F1) at a first temperature higher than room temperature is supplied to the peripheral portion (W1) of the surface of a work (W) (substrate) held in a spin chuck (21) as a substrate holding portion. As the first gas (F1) is supplied, the processing liquid is dried while in contact with the processing liquid at the peripheral portion (W1) of the work (W), so the drying speed of the processing liquid is adjusted compared to the conventional method, and as a result, the formation of a hump at the peripheral portion (W1) is suppressed. Because of this, it becomes possible to form a processing film with a uniform film thickness on the substrate.

[0113] As described above, the cause of the formation of a hump (R1) on the periphery of the work (W) is the temperature difference within the treatment liquid on the work (W). In this regard, by drying the treatment liquid (R) while supplying the first gas (F1) as described above, the temperature difference within the treatment liquid (R) can be adjusted, and as a result, the formation of the hump is suppressed. Because of this, it becomes possible to form a treatment film with a uniform film thickness on the work (W).

[0114] In addition, when the first gas (F1) is supplied intermittently, the formation of humps at the periphery (W1) of the work (W) is further suppressed, making it possible to form a processed film with a more uniform film thickness on the substrate.

[0115] In addition, the gas supply unit (40) that supplies the first gas (F1) may have a nozzle (41a) (first nozzle unit) that supplies the first gas (F1) and is provided above the periphery (W1). By configuring the first gas (F1) to be supplied from above the work (W) in this way, the formation of a hump at the periphery (W1) is further suppressed, making it possible to form a treatment film with a more uniform film thickness on the work (W).

[0116] In addition, the gas supply unit (40) may alternately supply a first gas (F1) and a second gas (F2) at a second temperature lower than the first temperature to each location of the peripheral portion (W1) of the work (W). By configuring it in this way, the drying speed of the treatment liquid in the peripheral portion (W1) is adjusted, and the formation of humps in the peripheral portion (W1) is suppressed. Because of this, it becomes possible to form a treatment film with a more uniform film thickness on the work (W).

[0117] Additionally, the gas supply unit (40) may simultaneously supply the first gas (F1) and the second gas (F2) to different locations on the surface of the work (W). In this configuration, the supply of the first gas and the second gas to each location on the substrate can be performed quickly.

[0118] Additionally, there may be a nozzle (42a) (second nozzle part) that supplies a second gas. By having a second nozzle part separately, the supply of the first gas (F1) and the second gas (F2) can be performed independently.

[0119] In addition, the first nozzle section and the second nozzle section may each have multiple parts, and the first nozzle section and the second nozzle section may be alternately arranged along the periphery section above the periphery section of the substrate. In this case, as described in the above embodiment, by moving the substrate relatively along the extension direction of the periphery section (W1) (for example, by rotating the work (W)), a configuration can be realized in which the first gas and the second gas are alternately supplied to each position of the periphery section (W1).

[0120] Although various exemplary embodiments have been described above, the invention is not limited to the aforementioned exemplary embodiments, and various omissions, substitutions, and modifications may be made. Furthermore, it is possible to form other embodiments by combining elements from other embodiments.

[0121] For example, in the above embodiment, a so-called spin coat method was described in which a circular workpiece (W) is rotated and a treatment liquid is applied from the center; however, the method described above can be applied regardless of the method of applying the treatment liquid to the workpiece (W). That is, it can be applied even when the treatment liquid is applied to the workpiece (W) using a so-called squeegee method.

[0122] From the foregoing description, it will be understood that various embodiments of the present disclosure are described herein for illustrative purposes only, and that various modifications can be made without departing from the scope and common knowledge of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, and the true scope and common knowledge are indicated by the appended claims.

Claims

Claim 1 A substrate processing apparatus for forming a processing film on the surface of a substrate, comprising: a substrate holding portion for holding a substrate coated with a processing liquid prior to drying for forming the processing film; and a gas supply portion including a first nozzle portion for supplying a first gas having a temperature higher than room temperature to a peripheral portion of the surface of the substrate held by the substrate holding portion, wherein the gas supply portion alternately supplies the first gas and a second gas having a temperature lower than the first temperature to a peripheral portion of the substrate. Claim 2 A substrate processing apparatus according to claim 1, wherein the gas supply unit intermittently supplies the first gas to the peripheral portion of the substrate. Claim 3 A substrate processing apparatus according to claim 1 or 2, wherein the first nozzle portion supplies the first gas to the peripheral portion of the substrate from above the peripheral portion of the substrate. Claim 4 A substrate processing apparatus according to claim 1 or 2, wherein the gas supply unit further comprises a second nozzle unit provided above the peripheral portion of the substrate to supply the second gas, and capable of simultaneously supplying the first gas and the second gas to different positions on the surface of the substrate. Claim 5 A substrate processing apparatus according to claim 4, wherein the first nozzle part and the second nozzle part are each a plurality, and the first nozzle part and the second nozzle part are alternately arranged along the periphery part above the periphery part of the substrate. Claim 6 A substrate processing apparatus according to claim 4, comprising: a first pipe supplying the first gas to the first nozzle section; a first temperature control unit adjusting the temperature of the gas flowing through the first pipe to the first temperature; a second pipe supplying the second gas to the second nozzle section; and a second temperature control unit adjusting the gas flowing through the second pipe to the second temperature. Claim 7 A substrate processing apparatus according to claim 1 or 2, wherein the first nozzle part alternately supplies the first gas and the second gas to the surface of the substrate. Claim 8 A substrate processing apparatus according to claim 7, comprising a pipe supplying the gas to the first nozzle section and a temperature control section for adjusting the temperature of the gas supplied from the first nozzle section to the substrate, wherein the temperature control section adjusts the temperature of the gas supplied to the substrate by switching the temperature of the gas flowing through the pipe between the first temperature and the second temperature. Claim 9 In claim 8, the temperature control unit switches the temperature of the gas flowing through the pipe between the first temperature and the second temperature by switching the power supply of a heater that heats the gas flowing through the pipe between the on state and the off state, a substrate processing device. Claim 10 In claim 8, the temperature control unit switches the temperature of the gas flowing through the pipe to the first temperature and the second temperature by changing the setting of the heater that heats the gas flowing through the pipe, a substrate processing device. Claim 11 A substrate processing apparatus according to claim 7, comprising a first pipe supplying the first gas to the first nozzle section, a second pipe supplying the second gas to the first nozzle section, and a temperature control unit for adjusting the temperature of the gas supplied from the first nozzle section to the substrate, wherein the temperature control unit adjusts the temperature of the gas supplied to the substrate by switching the pipe supplying the gas to the nozzle section between the first pipe and the second pipe. Claim 12 A substrate processing device according to claim 1 or 2, wherein the substrate holding part is a rotating mechanism that adsorbs the substrate and rotates it horizontally. Claim 13 A substrate processing apparatus according to claim 12, further comprising a cup arranged to surround the substrate supported in the substrate holding portion, wherein the gas supply portion supplies the first gas to the peripheral portion of the surface of the substrate from a supply port mounted in the cup. Claim 14 A substrate processing device according to claim 1 or 2, wherein the substrate holding member is a conveying mechanism that conveys the substrate in a horizontal direction. Claim 15 A substrate treatment method for forming a treatment film on the surface of a substrate, comprising alternately supplying a first gas at a first temperature higher than room temperature and a second gas at a second temperature lower than the first temperature to a peripheral portion of the surface of a substrate coated with a treatment liquid prior to drying for forming the treatment film. Claim 16 delete Claim 17 delete

Images