Substrate processing apparatus and method of controlling the same

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method capable of optimizing the characteristics of a thin film. The present invention comprises: a power supply unit (100) for generating RF power for generating plasma; a matching unit (200) provided between the power supply unit (100) and the process chamber (10) for matching impedance; and a power distribution unit (300) provided between the matching unit (200) and the process chamber (10) for supplying the RF power by branching it to the plurality of processing spaces (S1, S2, S3, S4), and including variable capacitors provided corresponding to each of the plurality of processing spaces (S1, S2, S3, S4) to regulate the branched RF power. A substrate processing device is disclosed that controls the RF power supplied to the plurality of processing spaces (S1, S2, S3, S4) by controlling the variable capacitors respectively using the correlation between the thin film thickness variation of each substrate formed by substrate processing in the plurality of processing spaces (S1, S2, S3, S4) and the variable capacitors, thereby minimizing the thin film thickness variation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4).

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method capable of optimizing the characteristics of a thin film. Background Technology

[0002] Generally, Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment is used to deposit insulating films, protective films, oxide films, metal films, etc., on a substrate by utilizing the chemical reaction of gases in a vacuum during a display manufacturing process or a semiconductor manufacturing process.

[0003] At this time, plasma refers to a state in which negatively charged electrons and positively charged ions are separated at ultra-high temperatures, and plasma discharge is used in gas excitation to generate active gases containing ions, free radicals, atoms, and molecules.

[0004] Recently, as wafers and glass substrates for manufacturing semiconductor devices are becoming larger, there is a demand for plasma sources that are easy to scalable, capable of controlling plasma ion energy and processing large areas.

[0005] Meanwhile, there are cases where substrate processing is performed on multiple substrates within a single process chamber for various purposes, such as improving the productivity of the substrate processing device and ensuring process uniformity.

[0006] For example, such a substrate processing device includes a process chamber for performing substrate processing, a plurality of gas injection units installed above the process chamber for injecting process gas into a processing space, and a plurality of substrate support units installed within the process chamber corresponding to the plurality of gas injection units and supporting the substrate.

[0007] That is, RF power can be applied to a substrate processing device capable of processing multiple substrates through multiple processing spaces to form a plasma atmosphere, and in this case, a plasma atmosphere can be formed in each of the processing spaces by distributing and applying RF power to each of the processing spaces.

[0008] Meanwhile, in this case, thickness variations occur between substrates undergoing processing in each processing space depending on the RF power distributed to each processing space; therefore, a technology for distributing RF power to each processing space is required to minimize thickness variations between each processing space.

[0009] Conventionally, the distribution of RF power provided to each processing space was controlled by measuring impedance parameters through sensors installed at the ends of RF power distributors corresponding to each processing space, and by comparing the measured parameters to control variable capacitors of RF power units distributed among multiple processing spaces.

[0010] In this case, due to the reduced sensitivity of the sensor, it is difficult to accurately measure the phase difference between current and voltage, resulting in low reliability of the measured parameters. Furthermore, when distributing RF power based on the measured parameters, there is a problem where the consistency of thickness variations among the substrates processed in each processing space is insufficient.

[0011] In particular, when measuring parameters through sensors installed in correspondence with each processing space and distributing RF power, there is a problem in that RF power cannot be distributed in a way that minimizes thickness deviation of the substrates because the RF power distribution value for a specific processing space affects the impedance value of other processing spaces according to compensation. The problem to be solved

[0012] The objective of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of RF power distribution to ensure excellent consistency of thickness deviations between substrates processed in multiple processing spaces, in order to solve the above-mentioned problems. means of solving the problem

[0013] The present invention is created to achieve the purpose of the present invention as described above, and the present invention comprises a process chamber (10) in which a plurality of processing spaces (S1, S2, S3, S4) for processing different substrates are formed, a plurality of substrate support members (30) provided corresponding to the plurality of processing spaces (S1, S2, S3, S4) and on which the substrate is placed, and a plurality of gas supply members (20) provided corresponding to the plurality of processing spaces (S1, S2, S3, S4) and for supplying gas to each of the plurality of processing spaces (S1, S2, S3, S4), and a substrate processing device that distributes and supplies RF power to generate plasma to each of the plurality of processing spaces (S1, S2, S3, S4), a power supply member (100) that generates RF power for generating plasma; and a matching member (200) provided between the power supply member (100) and the process chamber (10) to match impedances. A power distribution unit (300) provided between the matching unit (200) and the process chamber (10) to supply RF power by branching it to the plurality of processing spaces (S1, S2, S3, S4), and including variable capacitors provided corresponding to each of the plurality of processing spaces (S1, S2, S3, S4) to regulate the branched RF power; A substrate processing device is disclosed that controls the RF power supplied to the plurality of processing spaces (S1, S2, S3, S4) by controlling the variable capacitors respectively using the correlation between the thin film thickness variation of each substrate formed by substrate processing in the plurality of processing spaces (S1, S2, S3, S4) and the variable capacitors, thereby minimizing the thin film thickness variation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4).

[0014] The control unit (400) can calculate a relationship equation in which each of the variable capacitors is a variable for each of the thin film thicknesses of the substrates in which substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4).

[0015] The above relationship is,

[0016]

[0017]

[0018]

[0019]

[0020] (T1, T2, T3, T4 are the thin film thicknesses of each substrate in the processing spaces S1, S2, S3, and S4, respectively, and V1, V2, V3, V4 are the capacitance values ​​of the variable capacitors corresponding to the processing spaces S1, S2, S3, and S4, respectively.)

[0021] Furthermore, the present invention relates to a substrate processing method of a substrate processing device that distributes and supplies RF power to each of the plurality of processing spaces (S1, S2, S3, S4) of a process chamber (10) in which plasma is generated and substrate processing is performed by forming a plurality of different processing spaces (S1, S2, S3, S4), the method comprising: an RF power distribution step (S200) that branches and supplies RF power supplied through the power supply unit (100) to the plurality of processing spaces (S1, S2, S3, S4); and a substrate processing step (S300) that processes substrates through plasma formed in each of the plurality of processing spaces (S1, S2, S3, S4) using the distributed RF power, wherein the RF power distribution step (S200) comprises a sampling deposition step (S220) that performs deposition to measure the thin film thickness value of each of the substrates for which substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4); A substrate processing method is disclosed, comprising: a relationship calculation step (S230) for calculating a relationship with the variable capacitors as variables for each of the thin film thicknesses of substrates processed in the plurality of processing spaces (S1, S2, S3, S4) based on values ​​measured through the sampling deposition step (S220); and a setting step (S240) for varying the variable capacitors to minimize the thin film thickness deviation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) based on the calculated relationship.

[0022] Prior to the above sampling deposition step (S220), a reference setting step (S210) for setting the capacitance values ​​of the variable capacitors such that the RF power supplied to the plurality of processing spaces (S1, S2, S3, S4) is distributed equally among them may be included.

[0023] The above sampling deposition step (S220) may perform a first deposition to measure the thin film thickness of each of the substrates when the capacitance value of the variable capacitors is set as a reference through the reference setting step (S210), and multiple depositions corresponding to the number of the plurality of processing spaces (S1, S2, S3, S4) to measure the thin film thickness of each of the substrates by varying the variable capacitors accordingly.

[0024] The above setting step (S240) can set the capacitance values ​​of the variable capacitors based on the relationship calculated through the relationship calculation step (S230) so that the thin film thickness variation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) is minimized.

[0025] Before the RF power distribution step (S200), an impedance matching step (S100) for matching the impedance between the process chamber (10) and the power supply unit (100) that supplies the RF power may be additionally included. Effects of the invention

[0026] The substrate processing apparatus and substrate processing method according to the present invention have the advantage of excellent consistency of substrate thickness between a plurality of processing spaces (S1, S2, S3, S4) by distributing RF power by establishing a relationship function between the substrate thickness result value resulting from substrate processing in a plurality of processing spaces (S1, S2, S3, S4) and the variable capacitor control value.

[0027] In particular, the substrate processing apparatus and substrate processing method according to the present invention distribute RF power through a relationship function between the substrate thickness result value resulting from substrate processing in a plurality of processing spaces (S1, S2, S3, S4) and the variable capacitor control value, and thus has the advantage of achieving stable consistency of substrate thickness deviations between a plurality of processing spaces (S1, S2, S3, S4) by adjusting the variable capacitor value function regardless of conventional sensor sensitivity. Brief explanation of the drawing

[0028] FIG. 1 is a conceptual diagram illustrating a substrate processing apparatus according to the present invention. FIG. 2 is a flowchart showing a substrate processing method of the substrate processing apparatus of FIG. 1. Specific details for implementing the invention

[0029] The substrate processing apparatus and substrate processing method according to the present invention will be described below with reference to the attached drawings.

[0030] A substrate processing device according to the present invention comprises, as illustrated in FIG. 1, a process chamber (10) in which a plurality of processing spaces (S1, S2, S3, S4) for processing different substrates are formed, a plurality of substrate support members (30) provided corresponding to the plurality of processing spaces (S1, S2, S3, S4) and on which the substrates are placed, and a plurality of gas supply members (20) provided corresponding to the plurality of processing spaces (S1, S2, S3, S4) and for supplying gas to each of the plurality of processing spaces (S1, S2, S3, S4), and is a substrate processing device that distributes and supplies RF power to generate plasma to each of the plurality of processing spaces (S1, S2, S3, S4).

[0031] The apparatus includes: a power supply unit (100) for generating RF power to generate plasma; a matching unit (200) provided between the power supply unit (100) and the process chamber (10) for matching impedance; a power distribution unit (300) provided between the matching unit (200) and the process chamber (10) for supplying the RF power to the plurality of processing spaces (S1, S2, S3, S4) by branching it, and including variable capacitors provided corresponding to each of the plurality of processing spaces (S1, S2, S3, S4) to control the branched RF power; and a control unit (400) for controlling the distribution of power supplied from the power distribution unit (300) to the plurality of processing spaces (S1, S2, S3, S4).

[0032] At this time, the control unit (400) can control the variable capacitors respectively to minimize the thin film thickness variation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) by utilizing the correlation between the thin film thickness variation of each substrate formed by substrate processing in the plurality of processing spaces (S1, S2, S3, S4) and the variable capacitors, thereby controlling the RF power distributed and supplied to the plurality of processing spaces (S1, S2, S3, S4).

[0033] In addition, the substrate processing device according to the present invention may further include a plurality of gas injection units (20) installed in each of a plurality of processing spaces (S1, S2, S3, S4) within a process chamber (10) to inject process gas, and a plurality of substrate support units (30) each positioned opposite to the plurality of gas injection units (20) to support a substrate.

[0034] In addition, the substrate processing device according to the present invention may include a first RF sensor (500) disposed at the output terminal of the matching unit (200) to measure the output value of RF power.

[0035] In addition, the substrate processing device according to the present invention may include a plurality of second RF sensors (600) that measure RF power distributed through a power distribution unit (300) corresponding to a plurality of processing spaces (S1, S2, S3, S4).

[0036] Here, the substrate according to the present invention is configured such that substrate processing, such as deposition and etching, is performed, and any substrate such as a semiconductor manufacturing substrate, an LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, or a transparent glass substrate is possible.

[0037] And the substrate processing performed by the substrate processing apparatus according to the present invention can be any process, such as a PECVD process, as long as it is a substrate processing process that performs substrate processing using plasma, such as deposition or etching, within a processing space.

[0038] The above process chamber (10) is configured to form a processing space for substrate processing, and various configurations are possible.

[0039] For example, the process chamber (10) may be configured to include a chamber body having an opening formed on the upper side and an upper lead detachably coupled to the opening of the chamber body to form a processing space together with the chamber body.

[0040] Additionally, the process chamber (10) may form multiple processing spaces (S1, S2, S3, S4) for processing multiple substrates, and the multiple processing spaces (S1, S2, S3, S4) may not be spaces completely separated from each other within the process chamber (10), but may be spatially distinct processing spaces.

[0041] That is, the process chamber (10) may form different processing spaces (S1, S2, S3, S4) for processing a plurality of substrates, and each of the plurality of processing spaces (S1, S2, S3, S4) may each include a gas injection unit (20) that injects gas into each, and a substrate support unit (30) that supports a substrate at a position opposite to the gas injection unit (20).

[0042] Furthermore, the process chamber (10) may have a plasma atmosphere formed in each of the multiple processing spaces (S1, S2, S3, S4), thereby enabling substrate processing of multiple substrates using plasma.

[0043] In this case, the plasma atmosphere for each of the multiple processing spaces (S1, S2, S3, S4) can be individually controlled through variable capacitors provided corresponding to the power distribution unit (300) described later and each of the multiple processing spaces (S1, S2, S3, S4).

[0044] The above gas injection units (20) are configured to be installed in each of the multiple processing spaces (S1, S2, S3, S4) to inject process gas, and various configurations are possible.

[0045] In particular, the above gas injection units (20) are connected to the power supply unit (100) described later, so that RF power generated from the power supply unit (100) and distributed through the power distribution unit (300) can be applied, and a plasma atmosphere can be formed in the processing space by forming a potential difference between the gas injection units and the substrate support unit (30) installed oppositely.

[0046] Meanwhile, in this case, the above gas injection units (20) can individually control the plasma for each of the multiple processing spaces (S1, S2, S3, S4) by applying RF power distributed through the power distribution unit (300).

[0047] The above substrate support members (30) are configured to support a substrate by being positioned opposite to each of the plurality of gas injection members (20), and various configurations are possible.

[0048] For example, the above substrate support members (30) can be installed in each of the plurality of processing spaces (S1, S2, S3, S4) and can serve as grounds to form a potential difference between them and the gas injection member (20).

[0049] Meanwhile, the plurality of processing spaces (S1, S2, S3, S4) may form two or more processing spaces, and, for example, as shown in FIG. 1, may be composed of four processing spaces.

[0050] In this case, in order to apply RF power generated from a single power supply unit (100) to each of the multiple processing spaces (S1, S2, S3, S4), it is necessary to distribute and supply the RF power. However, in this process, the plasma atmosphere formed in each processing space differs depending on the distribution of the RF power, so a variation in the thin film thickness between the substrates being processed in each processing space may occur.

[0051] In addition, even when RF power is distributed equally, the plasma atmosphere formed in each processing space differs depending on the variable capacitor corresponding to each processing space, so variations in thin film thickness may occur between substrates processed in each processing space.

[0052] Since variations in thin film thickness occurring in this way make it difficult to maintain consistent product quality, it is necessary to control RF distribution to minimize variations in thin film thickness of substrates processed in each processing space.

[0053] To this end, the substrate processing apparatus according to the present invention comprises: a power supply unit (100) for generating RF power for generating plasma; a matching unit (200) provided between the power supply unit (100) and the process chamber (10) for matching impedance; a power distribution unit (300) provided between the matching unit (200) and the process chamber (10) for supplying the RF power by branching it to the plurality of processing spaces (S1, S2, S3, S4) and including variable capacitors provided corresponding to each of the plurality of processing spaces (S1, S2, S3, S4) to control the branched RF power; and a control unit (400) for controlling the distribution of power supplied from the power distribution unit (300) to the plurality of processing spaces (S1, S2, S3, S4).

[0054] In addition, the substrate processing device according to the present invention may include a first RF sensor (500) disposed at the output terminal of the matching unit (200) to measure the output value of RF power.

[0055] In addition, the substrate processing device according to the present invention may include a plurality of second RF sensors (600) that measure RF power distributed through a power distribution unit (300) corresponding to a plurality of processing spaces (S1, S2, S3, S4).

[0056] The above power supply unit (100) is configured to generate RF power for generating plasma, and various configurations are possible.

[0057] For example, the power supply unit (100) can generate and supply a total amount of RF power to be applied to each of the plurality of processing spaces (S1, S2, S3, S4) to the matching unit (200) and power distribution unit (300) described later as a single power supply unit (100).

[0058] In addition, the power supply unit (100) may separately be equipped with a high-frequency power supply (110) and a low-frequency power supply (120) to supply power corresponding to the respective frequency.

[0059] Meanwhile, by providing the above-mentioned power supply unit (100) as a single unit and distributing RF power to each processing space through the power distribution unit (300), it is possible to prevent an increase in the cost and footprint of the entire system due to an increase in the number of power sources, thereby providing the advantage of enabling efficient substrate processing.

[0060] The above-mentioned matching unit (200) is configured to match impedance between the power supply unit (100) and the process chamber (10), and various configurations are possible.

[0061] The above matching unit (200) may include a high-frequency matching unit (210) provided between the above-described high-frequency power source (110) and the process chamber (10) to match impedance, and a low-frequency matching unit (220) provided between the low-frequency power source (120) and the process chamber (10) to match impedance.

[0062] For example, the matching unit (200) is a circuit that performs impedance matching to eliminate reflection loss of RF power, and can be designed so that the impedance of the power supply unit (100) and the sum of the impedances of the process chamber (10) and the matching unit (200) that form a plurality of processing spaces (S1, S2, S3, S4) are matched.

[0063] Meanwhile, in this case, the matching unit (200) may be installed by connecting to each output terminal when the aforementioned high-frequency power supply (110) and low-frequency power supply (120) are separately provided, and may also be provided for a single power supply unit (100).

[0064] At this time, the matching part (200) may be any type of conventionally disclosed impedance matching configuration used to match impedance.

[0065] Meanwhile, the substrate processing device according to the present invention may include a first RF sensor (500) that is positioned at the output terminal of the matching unit (200) and measures the output value of RF power.

[0066] The first RF sensor (500) is positioned at the output terminal of the matching unit (200) to measure the RF power value output through the matching unit (200), thereby allowing verification of whether impedance matching is performed through the matching unit (200).

[0067] In this case, the first RF sensor (500) may include a high-frequency first RF sensor (510) installed at the output terminal of the high-frequency matching unit (210) and a low-frequency first RF sensor (520) installed at the output terminal of the low-frequency matching unit (220).

[0068] The power distribution unit (300) is configured to include variable capacitors corresponding to each of a plurality of processing spaces (S1, S2, S3, S4) in order to branch and supply RF power applied to a plurality of gas injection units (20) between the matching unit (200) and the process chamber (10), and various configurations are possible.

[0069] The above power distribution unit (300) may include a high-frequency power distribution unit (310) that distributes RF power from the above-described high-frequency power source (110) through a high-frequency matching unit (210) to each of a plurality of processing spaces (S1, S2, S3, S4) within the process chamber (10), and a low-frequency power distribution unit (320) that distributes RF power from the low-frequency power source (120) through a low-frequency matching unit (220) to each of a plurality of processing spaces (S1, S2, S3, S4) within the process chamber (10).

[0070] For example, the power distribution unit (300) includes a circuit including variable capacitors to distribute RF power input through the power supply unit (100) and the matching unit (200), so that RF power applied to each of the plurality of processing spaces (S1, S2, S3, S4) can be individually adjusted and distributed.

[0071] That is, the power distribution unit (300) can distribute RF power applied to each of the multiple processing spaces (S1, S2, S3, S4) individually according to the required RF power magnitude of each of the multiple processing spaces (S1, S2, S3, S4) by adjusting the capacitance of the variable capacitor provided at the rear end to adjust the impedance of the circuit for distribution.

[0072] The above variable capacitors are configured to be included inside the power distribution unit (300) and to adjust the individual magnitude of RF power distributed through the power distribution unit (300) through impedance, and various configurations are possible.

[0073] The above variable capacitors may be provided at the end of the distribution circuit of the power distribution unit (300) corresponding to a plurality of processing spaces (S1, S2, S3, S4), and as the capacitance value is controlled through the control unit (400) described later, the impedance of each may be adjusted so as to distribute the distributed RF power to be individually controlled.

[0074] Meanwhile, in this case, it may include a plurality of second RF sensors (600) that measure RF power distributed through the power distribution unit (300) corresponding to a plurality of processing spaces (S1, S2, S3, S4).

[0075] The above plurality of second RF sensors (600) are configured to be placed at the output terminal of the power distribution unit (300) to measure the magnitude of RF power applied to each of the plurality of processing spaces (S1, S2, S3, S4), and various configurations are possible.

[0076] For example, the plurality of second RF sensors (600) are provided in four corresponding to each processing space in a process chamber (10) equipped with four processing spaces, and can measure the magnitude of the RF power applied to each processing space, thereby obtaining the RF power value applied to each processing space during the RF power distribution method described later.

[0077] Meanwhile, as mentioned above, in the case of substrates where processing is performed through multiple processing spaces (S1, S2, S3, S4), there is a problem in that a variation in thin film thickness occurs after processing depending on the characteristics such as temperature and impedance of each processing space, even when RF power is distributed equally.

[0078] In other words, even when RF power is distributed equally, uniform substrate processing between processing spaces cannot be performed due to various variables of the processing spaces, and variations in thin film thickness between each substrate may occur.

[0079] To solve these problems, RF power can be individually controlled for each processing space to minimize the thin film thickness variation between substrates where substrate processing is performed in each processing space, or to maintain the thin film thickness variation within a preset range.

[0080] To this end, the control unit (400) is configured to control the distribution of power supplied from the power distribution unit (300) to a plurality of processing spaces (S1, S2, S3, S4), and various configurations are possible.

[0081] For example, the control unit (400) can adjust the magnitude of RF power distributed and applied to each processing space through the power distribution unit (300) by adjusting the capacitance values ​​of the variable capacitors of the power distribution unit (300).

[0082] In this case, the control unit (400) can control the distribution of power through the relationship between the thin film thickness variation of substrates undergoing substrate processing in a plurality of processing spaces (S1, S2, S3, S4) and the variable capacitors, and more specifically, can adjust the capacitance values ​​of the variable capacitors so that the thin film thickness variation of substrates undergoing substrate processing in a plurality of processing spaces (S1, S2, S3, S4) is minimized or optimized.

[0083] At this time, the control unit (400) can calculate a relationship equation with variable capacitors as variables for each of the thin film thicknesses of the substrates where substrate processing is performed in a plurality of processing spaces (S1, S2, S3, S4).

[0084] For example, the control unit (400) can derive a function equation in which the thin film thickness of a substrate, which is processed through the first processing space (S1), is a variable capacitor corresponding to the first processing space (S1), the second processing space (S2), the third processing space (S3), and the fourth processing space (S4), is a variable for a process chamber (10) that is equipped with four processing spaces.

[0085] Furthermore, the control unit (400) can derive, in the same way, a function formula with variable capacitors as variables for the thin film thickness of a substrate for which substrate processing is performed through the second processing space (S2), a function formula with variable capacitors as variables for which substrate processing is performed through the third processing space (S3), and a function formula with variable capacitors as variables for which substrate processing is performed through the fourth processing space (S4).

[0086] Through this, the control unit (400) can obtain function equations with variable capacitors as variables for the thin film thickness of the substrate in which substrate processing is performed in each processing space, as many times as the number of processing spaces, and through the obtained function equations, can obtain capacitance values ​​of variable capacitors that optimize the deviation between the thin film thicknesses of the substrate in each processing space to be within a minimum or preset range.

[0087] That is, the control unit (400) can control the capacitance values ​​of the variable capacitors so that the deviation of the thin film thickness of each of the substrates calculated through the relationship is minimized.

[0088] Meanwhile, unlike the above, the control unit (400) can also obtain a function formula with the thin film thicknesses of the substrates on which substrate processing is performed in each processing space as variables for the variable capacitor corresponding to each processing space.

[0089] Thus, the control unit (400) can optimize RF power distribution by deriving the capacitance value of each variable capacitor to achieve a minimum deviation with respect to the thin film thicknesses of the substrates on which substrate processing is performed in each processing space.

[0090] Meanwhile, a substrate processing method that minimizes the thin film thickness variation between substrates undergoing processing in multiple processing spaces (S1, S2, S3, S4) by optimizing RF power distribution is described in detail as follows.

[0091] A substrate processing method according to the present invention is a substrate processing method of a substrate processing device that distributes and supplies RF power to each of the plurality of processing spaces (S1, S2, S3, S4) of a process chamber (10) in which plasma is generated to perform substrate processing, wherein RF power supplied through the power supply unit (100) is branched and supplied to the plurality of processing spaces (S1, S2, S3, S4); and a substrate processing step (S300) that processes substrates through plasma formed in each of the plurality of processing spaces (S1, S2, S3, S4) using the distributed RF power.

[0092] In addition, the substrate processing method according to the present invention may further include an impedance matching step (S100) for matching the impedance between the process chamber (10) and the power supply unit (100) that supplies RF power before the RF power distribution step (S200).

[0093] The above impedance matching step (S100) is a step of matching the impedance between the process chamber (10) and the power supply unit (100) that supplies RF power before the RF power distribution step (S200), and can be done by various methods.

[0094] The above impedance matching step (S100) can match the impedance between the power supply unit (100) and the process chamber (10) through the matching unit (200) as described above, and for example, if the impedance of the power supply unit (100) is 50Ω, it can be matched to have a matching impedance of 50Ω.

[0095] At this time, the impedance matching step (S100) can be performed on a process chamber (10) including a plurality of processing spaces (S1, S2, S3, S4) through a single matching unit (200) connected to a single power supply unit (100).

[0096] In addition, the impedance matching step (S100) can generate a total amount of RF power before distribution through the power supply unit (100) and supply it to the power distribution unit (300) via the matching unit (200).

[0097] The above RF power distribution step (S200) is a step of supplying RF power supplied through the power supply unit (100) to a plurality of processing spaces (S1, S2, S3, S4) by branching it, and can be done by various methods.

[0098] For example, the RF power distribution step (S200) may include: a sampling deposition step (S220) for performing deposition to measure the thin film thickness value of each substrate for which substrate processing is performed in a plurality of processing spaces (S1, S2, S3, S4); a relationship calculation step (S230) for calculating a relationship with the variable capacitors as variables for each thin film thickness of the substrate for which substrate processing is performed in a plurality of processing spaces (S1, S2, S3, S4) based on the value measured through the sampling deposition step (S220); and a setting step (S240) for varying the variable capacitors to minimize the thin film thickness deviation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) based on the calculated relationship.

[0099] The above standard setting step (S210) is a step for setting standards to perform the sampling deposition step (S220) described later, and can be done by various methods.

[0100] For example, the above reference setting step (S210) can be set based on variable capacitors that ensure the RF power supplied to a plurality of processing spaces (S1, S2, S3, S4) is distributed equally to each other.

[0101] That is, the above reference setting step (S210) can be set based on the capacitance values ​​of variable capacitors so that the distributed RF power is distributed equally.

[0102] In this case, the reference setting step (S210) may consider the distributed RF power to be the same if it has an RF power value within a preset range considering the measurement error.

[0103] Meanwhile, the above standard setting step (S210) can be set based on the case where the distributed RF power is the same, thereby setting the RF power at that time to a standard value of 0.

[0104] The above sampling deposition step (S220) is a step of measuring the thin film thickness value of each of the substrates in which substrate processing is performed in a plurality of processing spaces (S1, S2, S3, S4) according to a plurality of variable capacitors, and can be done by various methods.

[0105] For example, the above sampling deposition step (S220) may be performed to obtain sampling data in order to calculate the relationship between the thin film thickness of the substrate and a plurality of variable capacitors through the relationship calculation step (S230) described later.

[0106] That is, the above sampling deposition step (S220) can obtain a thin film thickness value according to the values ​​of a plurality of variable capacitors by performing deposition by changing the capacitance of the variable capacitors to a preset value while the reference is set.

[0107] Meanwhile, in this case, the sampling deposition step (S220) may perform a first deposition to measure the thin film thickness of each substrate when the capacitance value of the variable capacitors is set as a reference through the reference setting step (S210), and multiple depositions corresponding to the number of processing spaces (S1, S2, S3, S4) to measure the thin film thickness of each substrate by varying the variable capacitors.

[0108] More specifically, the sampling deposition step (S220) can measure the thin film thickness of the substrate in each of the multiple processing spaces (S1, S2, S3, S4) through the first deposition when the variable capacitor capacitance value is set based on the reference setting step (S210) where RF power is equally distributed to each of the multiple processing spaces (S1, S2, S3, S4).

[0109] In addition, the sampling deposition step (S220) thereafter can measure the thin film thickness value of each substrate by varying the variable capacitors accordingly, and can be performed multiple times corresponding to the number of processing spaces (S1, S2, S3, S4).

[0110] More specifically, for a process chamber (10) in which four processing spaces are formed, thin film thickness values ​​for substrates of the first processing space (S1), second processing space (S2), third processing space (S3), and fourth processing space (S4) can be obtained by changing four variable capacitors that determine the distributed RF power of each processing space to a preset value, and thin film thickness values ​​of substrates processed through each processing space can be obtained by changing the capacitance value of the variable capacitors four times while considering the number of capacitance variables of the four processing spaces and the four variable capacitors.

[0111] With respect to the process chamber (10) in which four processing spaces are formed, the sampling deposition step (S220) is performed a total of four times, thereby obtaining the capacitance values ​​of four variable capacitors for each of the four substrate thickness values ​​of the first processing space (S1), the capacitance values ​​of four variable capacitors for each of the four substrate thickness values ​​of the second processing space (S2), the capacitance values ​​of four variable capacitors for each of the four substrate thickness values ​​of the third processing space (S3), and the capacitance values ​​of four variable capacitors for each of the four substrate thickness values ​​of the fourth processing space (S4).

[0112] That is, since there are capacitance values ​​of four variable capacitors for one substrate thickness, a function having five variables is derived. Therefore, in order to derive five parameters, the sampling deposition step (S220) can be performed once using the initial reference value, and then performed four times corresponding to the number of each processing space (S1, S2, S3, S4), and can be performed multiple times corresponding to the number of processing spaces.

[0113] The above relationship calculation step (S230) is a step of deriving a function, which is a relationship between the thin film thickness of the substrate and the variable capacitors, based on data measured through the sampling deposition step (S220), and can be done by various methods.

[0114] For example, the above relationship calculation step (S230) can derive a function formula with variable capacitors as variables for each of the thin film thicknesses of the substrates where substrate processing is performed in a plurality of processing spaces (S1, S2, S3, S4), and a multiple regression analysis method may be used.

[0115] More specifically, for a process chamber (10) that forms four processing spaces, a function with four variable capacitors as variables can be derived for the thin film thickness of a substrate in which substrate processing is performed in the first processing space (S1), and in the same way, a function with four variable capacitors as variables can be derived for each of the thin film thicknesses of a substrate in which substrate processing is performed in the second processing space (S2), the third processing space (S3), and the fourth processing space (S4).

[0116] More specifically, the function formula according to the present invention, in which the thin film thickness and the capacitance value of the variable capacitor are variables, is as follows.

[0117]

[0118]

[0119]

[0120]

[0121] (T1, T2, T3, T4 are the thin film thicknesses of each substrate in processing spaces S1, S2, S3, and S4, respectively, and V1, V2, V3, V4 are the capacitance values ​​of the variable capacitors corresponding to processing spaces S1, S2, S3, and S4, respectively)

[0122] Through this, as variables affecting the thin film thickness of the substrate where substrate processing is performed in the first processing space (S1), not only V1, which is the capacitance value of the variable capacitor corresponding to the first processing space (S1), but also V2, V3, and V4, which are the capacitance values ​​of the variable capacitor corresponding to the second, third, and fourth processing spaces (S2, S3, S4), can be used to derive a more precise relationship between the thin film thickness of the substrate and the capacitance value of the variable capacitor.

[0123] In order to determine the five coefficient values ​​of this relationship, through the sampling deposition step (S220), data on the substrate thin film thickness at the reference value and the substrate thin film thickness value according to the capacitance value of the variable capacitor through four additional depositions can be obtained, and the coefficient values ​​can be selected and the relationship can be completed by substituting the obtained data.

[0124] Therefore, a function corresponding to the number of processing spaces can be derived, and each function may be a function of the thin film thickness of the substrate on which substrate processing is performed in each processing space.

[0125] Meanwhile, the above relationship calculation step (S230) can derive the capacitance values ​​of variable capacitors having an optimal thin film thickness deviation based on the derived function.

[0126] The above setting step (S240) is a step of applying the capacitance values ​​of variable capacitors having an optimal thin film thickness deviation among a plurality of processing spaces (S1, S2, S3, S4) based on the function derived through the relationship calculation step (S230) to the variable capacitors of the power distribution unit (300) through the control unit (400), and can be done in various ways.

[0127] That is, the setting step (S240) can apply the capacitance value of a variable capacitor, in which the thin film thickness deviation of each processing space calculated through the relationship calculation step (S230) is within a minimum or preset range, to each variable capacitor through the control unit (400), thereby enabling substrate processing to be performed by minimizing the thin film thickness deviation between substrates in a plurality of processing spaces (S1, S2, S3, S4).

[0128] The above substrate processing step (S300) is a step of processing substrates through plasma formed in each of the plurality of processing spaces (S1, S2, S3, S4) through distributed RF power, and can be performed by various methods.

[0129] Meanwhile, the above substrate processing step (S300) may be performed after the RF power distribution step (S200) is performed once during the initial equipment setup, and as another example, the RF power distribution step (S200) may be performed continuously according to a specific cycle.

[0131] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention. Explanation of the symbols

[0132] 10: Process Chamber 100: Power Supply Unit 200: Matching Section 300: Power Distribution Section 400: Control unit 500: 1st RF sensor 600: 2nd RF sensor

Claims

Claim 1 A substrate processing device comprising a process chamber (10) in which a plurality of processing spaces (S1, S2, S3, S4) for processing different substrates are formed, a plurality of substrate support members (30) provided corresponding to the plurality of processing spaces (S1, S2, S3, S4) and on which the substrate is placed, and a plurality of gas supply members (20) provided corresponding to the plurality of processing spaces (S1, S2, S3, S4) and for supplying gas to each of the plurality of processing spaces (S1, S2, S3, S4), and distributing and supplying RF power to each of the plurality of processing spaces (S1, S2, S3, S4) to generate plasma, wherein the device comprises: a power supply member (100) for generating RF power to generate plasma; a matching member (200) provided between the power supply member (100) and the process chamber (10) to match impedance; and a matching member (200) provided between the matching member (200) and the process chamber (10). A power distribution unit (300) comprising variable capacitors provided corresponding to each of the plurality of processing spaces (S1, S2, S3, S4) to supply the RF power by branching it to the plurality of processing spaces (S1, S2, S3, S4) and to regulate the branched RF power; A substrate processing device comprising a control unit (400) for controlling the distribution of power supplied to the plurality of processing spaces (S1, S2, S3, S4) from the power distribution unit (300), wherein the control unit (400) controls the variable capacitors corresponding to each of the plurality of processing spaces (S1, S2, S3, S4) to minimize the thin film thickness variation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) by utilizing the correlation between the thin film thickness variation of each substrate formed by substrate processing in the plurality of processing spaces (S1, S2, S3, S4) and the variable capacitors corresponding to each of the plurality of processing spaces (S1, S2, S3, S4), thereby controlling the RF power distributed to the plurality of processing spaces (S1, S2, S3, S4). Claim 2 A substrate processing apparatus according to claim 1, wherein the control unit (400) calculates a relationship equation in which each of the variable capacitors is a variable for each of the thin film thicknesses of the substrates in which substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4). Claim 3 In claim 2, the above relationship is, A substrate processing apparatus characterized by (T1, T2, T3, T4 are the thin film thicknesses of each substrate in processing spaces S1, S2, S3, and S4, respectively, and V1, V2, V3, V4 are the capacitance values ​​of variable capacitors corresponding to processing spaces S1, S2, S3, and S4, respectively). Claim 4 A substrate processing method of a substrate processing apparatus according to any one of claims 1 to 3, wherein RF power is distributed and supplied to each of the plurality of processing spaces (S1, S2, S3, S4) of a process chamber (10) in which plasma is generated to perform substrate processing by forming a plurality of different processing spaces (S1, S2, S3, S4), the method comprises: an RF power distribution step (S200) in which RF power supplied through the power supply unit (100) is branched and supplied to the plurality of processing spaces (S1, S2, S3, S4); and a substrate processing step (S300) in which substrates are processed through plasma formed in each of the plurality of processing spaces (S1, S2, S3, S4) through the distributed RF power, wherein the RF power distribution step (S200) comprises: a sampling deposition step (S220) in which deposition is performed to measure the thin film thickness value of each of the substrates for which substrate processing is performed in the plurality of processing spaces (S1, S2, S3, S4); and the A substrate processing method characterized by comprising: a relationship calculation step (S230) for calculating a relationship in which variable capacitors corresponding to each of the plurality of processing spaces (S1, S2, S3, S4) are provided as variables to control the RF power branched for each of the thin film thicknesses of substrates processed in the plurality of processing spaces (S1, S2, S3, S4) based on values ​​measured through a sampling deposition step (S220); and a setting step (S240) for varying the variable capacitors to minimize the thin film thickness deviation of substrates processed in the plurality of processing spaces (S1, S2, S3, S4) based on the calculated relationship. Claim 5 A substrate processing method according to claim 4, characterized by including a reference setting step (S210) for setting the capacitance values ​​of the variable capacitors such that the RF power supplied to the plurality of processing spaces (S1, S2, S3, S4) is distributed equally to each other prior to the sampling deposition step (S220). Claim 6 A substrate processing method according to claim 5, wherein the sampling deposition step (S220) comprises an initial deposition for measuring the thin film thickness of each of the substrates when the capacitance value of the variable capacitors is set as a reference through the reference setting step (S210), and a plurality of depositions corresponding to the number of the plurality of processing spaces (S1, S2, S3, S4) for measuring the thin film thickness of each of the substrates by varying the variable capacitors. Claim 7 A substrate processing method according to claim 4, wherein the setting step (S240) sets the capacitance values ​​of the variable capacitors based on the relationship calculated through the relationship calculation step (S230) so that the thin film thickness variation of the substrates processed in the plurality of processing spaces (S1, S2, S3, S4) is minimized. Claim 8 A substrate processing method according to claim 4, further comprising an impedance matching step (S100) for matching the impedance between the process chamber (10) and the power supply unit (100) supplying the RF power before the RF power distribution step (S200).

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