Gas delivery systems and methods

Abstract

The system may include a main line for delivering a first gas, and a sensor for measuring the concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowing through the first subline. The second subline may include a second flow controller for controlling the first gas flowing through the second subline. The delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and the second gas and a second mixture of the first gas and the second gas into the first and second semiconductor processing chambers, respectively.

Description

Technology Field

[0001] This application claims the benefit of priority to U.S. Patent Application No. 62 / 934,317 filed November 12, 2019, whereby the contents of that U.S. Patent Application are incorporated by reference in their entirety for all purposes.

[0002] The present technology relates to semiconductor processes and equipment. More specifically, the present technology relates to semiconductor processing systems and methods for the detection, control, and / or delivery of gases. Background Technology

[0003] Integrated circuits are made possible by processes that generate complexly patterned material layers on substrate surfaces. As device sizes continue to shrink in next-generation devices, the uniformity and precise control of processing conditions are becoming increasingly important, and chamber designs and system configurations can play a critical role in the quality of the produced devices. Therefore, there is a demand for systems and methods that can be used to produce high-quality devices and structures.

[0004] Embodiments of the present invention may include precursor delivery methods. An exemplary method may include the step of flowing a first gas through a first delivery main line. The first gas may include a precursor and a diluent gas. The first delivery main line may be fluidly coupled to a first delivery sub-line and a second delivery sub-line downstream of the first delivery main line. The first delivery sub-line may be configured to provide fluid access from the first delivery main line to a first semiconductor processing chamber. The second delivery sub-line may be configured to provide fluid access from the first delivery main line to a second semiconductor processing chamber. The method may further include the step of measuring the concentration of the precursor contained in the first gas delivered through the first delivery main line. The method may also include the step of adjusting a first flow rate of the first gas delivered through the first delivery sub-line based at least partially on the measured concentration of the precursor, and the step of adjusting a second flow rate of the first gas delivered through the second delivery sub-line based at least partially on the measured concentration of the precursor. The method may further include the step of delivering a first mixture of a first gas and a second gas to a first semiconductor processing chamber via a first delivery subline according to a first recipe set point, wherein the second gas may include a diluent gas. The method may also include the step of delivering a second mixture of a first gas and a second gas via a second delivery subline to a second semiconductor processing chamber according to a second recipe set point. The first mixture and the second mixture may be delivered simultaneously to the first semiconductor processing chamber and the second semiconductor processing chamber, respectively.

[0005] In some embodiments, the precursor may include diborane. In some embodiments, the diluent gas may include hydrogen. In some embodiments, the concentration of the precursor may be measured using a light absorption sensor. In some embodiments, the light absorption sensor may include an elongated optical cell. The elongated optical cell may be configured to direct the first gas to flow through at least a portion of the elongated optical cell along the longitudinal axis of the elongated optical cell while the concentration of the precursor contained in the first gas can be measured by the light absorption sensor. In some embodiments, the light absorption sensor may include an optical filter defining a first end of the elongated optical cell. The optical filter is 1,600 ± 100 cm -1 or 2,520±100 cm -1 It may be configured to allow infrared light having one or more of the wavenumbers to pass through. In some embodiments, the light absorption sensor may include an optical window defining a second end of an elongated optical cell. Light entering the elongated optical cell through the optical window travels about 400 cm -1 to about 3,000 cm -1 It may include infrared rays having wavenumbers of a range.

[0006] In some embodiments, a first recipe setting value may limit a first concentration of a precursor contained in a first mixture of a first gas and a second gas. A second recipe setting value may limit a second concentration of a precursor contained in a second mixture of a first gas and a second gas. In some embodiments, the method may further include the step of flowing the second gas through a second delivery main line. The second delivery main line may be fluidly coupled to a third delivery sub-line and a fourth delivery sub-line downstream of the second delivery main line. The third delivery sub-line may be configured to provide fluid access from the second delivery main line to a first semiconductor processing chamber. The fourth delivery sub-line may be configured to provide fluid access from the second delivery main line to a second semiconductor processing chamber. The method may also include the step of adjusting a first flow rate of the second gas delivered through the third delivery sub-line based at least partially on a measured concentration of the precursor, and the step of adjusting a second flow rate of the second gas delivered through the fourth delivery sub-line based at least partially on a measured concentration of the precursor. In some embodiments, the step of delivering a first mixture of a first gas and a second gas delivered through a first delivery sub-line may include the step of delivering a first mixture of a first gas delivered through a first delivery sub-line and a second gas delivered through a third delivery sub-line. In some embodiments, the step of delivering a second mixture of a first gas and a second gas delivered through a second delivery sub-line may include the step of delivering a second mixture of a first gas delivered through a second delivery sub-line and a second gas delivered through a fourth delivery sub-line.

[0007] Embodiments of the present technology may include precursor delivery systems. An exemplary precursor delivery system may include a first delivery main line configured to deliver a first gas, and a precursor sensor configured to measure the concentration of a precursor contained in the first gas delivered through the first delivery main line. The precursor delivery system may also include a first delivery sub-line and a second delivery sub-line fluidically coupled to the first delivery main line downstream of the first delivery main line. The first delivery sub-line may be configured to provide fluid access from the first delivery main line to a first semiconductor processing chamber. The second delivery sub-line may be configured to provide fluid access from the first delivery main line to a second semiconductor processing chamber. The first delivery sub-line may include a first flow controller configured to control a first flow rate of the first gas flowing into the first semiconductor processing chamber. The second delivery sub-line may include a second flow controller configured to control a second flow rate of the first gas flowing into the second semiconductor processing chamber. The precursor delivery system may further include a precursor sensor, a first flow controller, and a precursor delivery controller coupled to communicate with a second flow controller. The precursor delivery controller may be configured to control the first flow controller based on the measured concentration of the precursor to deliver a first mixture of a first gas and a second gas to a first semiconductor processing chamber according to a first recipe setting value. The precursor delivery controller may be further configured to control the second flow controller based on the measured concentration of the precursor to deliver a second mixture of a first gas and a second gas to a second semiconductor processing chamber according to a second recipe setting value.

[0008] In some embodiments, the precursor delivery system may be configured to simultaneously deliver a first mixture to a first semiconductor processing chamber and a second mixture to a second semiconductor processing chamber. In some embodiments, the precursor may include diborane, and the first gas may further include hydrogen. The second gas may include hydrogen. In some embodiments, the precursor sensor may include a light absorption sensor. In some embodiments, the light absorption sensor may include an elongated optical cell, and the elongated optical cell may be configured to direct the first gas to flow through at least a portion of the elongated optical cell along the longitudinal axis of the elongated optical cell while the concentration of the precursor contained in the first gas can be measured by the light absorption sensor. In some embodiments, the light absorption sensor may include an optical filter defining a first end of the elongated optical cell. The optical filter is 1,600 ± 100 cm -1 or 2,520±100 cm -1 It may be configured to allow infrared light having one or more of the wavenumbers to pass through. In some embodiments, the light absorption sensor may include an optical window defining a second end of an elongated optical cell. Light entering the elongated optical cell through the optical window travels about 400 cm -1 to about 3,000 cm -1 It may include infrared rays having a range of wavenumbers. In some embodiments, the light absorption sensor may further include at least one of a pressure sensor configured to measure the pressure inside the elongated optical cell or a temperature sensor configured to measure the temperature inside the elongated optical cell.

[0009] In some embodiments, the precursor delivery system may further include a second delivery main line configured to deliver a second gas. The precursor delivery system may also include a third delivery sub-line and a fourth delivery sub-line fluidically coupled to the second delivery main line downstream of the second delivery main line. The third delivery sub-line may be configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber. The fourth delivery sub-line may be configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber. The third delivery sub-line may include a third flow controller configured to control a first flow rate of the second gas flowing into the first semiconductor processing chamber. The fourth delivery sub-line may include a fourth flow controller configured to control a second flow rate of the second gas flowing into the second semiconductor processing chamber. The precursor delivery controller may be further coupled to communicate with the third flow controller and the fourth flow controller. The precursor transfer controller may be further configured to control a third flow controller based on a measured concentration of the precursor to transfer a first mixture to a first semiconductor processing chamber according to a first recipe setting value. The precursor transfer controller may be further configured to control a fourth flow controller based on a measured concentration of the precursor to transfer a second mixture to a second semiconductor processing chamber according to a second recipe setting value. In some embodiments, the first recipe setting value may limit a first concentration of the precursor contained in a first mixture of a first gas and a second gas. The second recipe setting value may limit a second concentration of the precursor contained in a second mixture of a first gas and a second gas.

[0010] Embodiments of the present invention may include semiconductor processing systems. An exemplary semiconductor processing system may include a first semiconductor processing chamber and a second semiconductor processing chamber arranged in a tandem section of the semiconductor processing system. The semiconductor processing system may also include a precursor delivery system. The precursor delivery system may include a first delivery main line configured to deliver a first gas. The first delivery main line may be fluidly coupled with a first delivery sub-line and a second delivery sub-line. The first delivery sub-line may include a first flow controller and may be configured to provide fluid access from the first delivery main line to the first semiconductor processing chamber. The second delivery sub-line may include a second flow controller and may be configured to provide fluid access from the first delivery main line to the second semiconductor processing chamber. The precursor delivery system may also include a light absorption sensor installed along the first delivery main line. The light absorption sensor may be configured to measure the concentration of a precursor contained in the first gas. The precursor delivery system may also include a second delivery main line configured to deliver a second gas. The second delivery main line may be fluidly coupled with the third delivery sub-line and the fourth delivery sub-line. The third delivery sub-line may include a third flow controller and may be configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber. The fourth delivery sub-line may include a fourth flow controller and may be configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber. The precursor delivery system may further include a light absorption sensor and a precursor delivery controller that is communically coupled with the first, second, third, and fourth flow controllers.The precursor delivery controller may be configured to control first and third flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and the second gas to a first semiconductor processing chamber according to a first recipe setting value. The precursor delivery controller may be further configured to control second and fourth flow controllers based on the measured concentration of the precursor to deliver a second mixture of the first gas and the second gas to a second semiconductor processing chamber according to a second recipe setting value. The precursor delivery system may be configured to deliver the first mixture and the second mixture simultaneously.

[0011] The present technology can provide many advantages over existing systems and technologies. For example, the present technology can achieve precise delivery of precursors into one or more processing chambers by compensating for any variation in the concentration of the precursor delivered from the gas source. Additionally, the present technology allows a single gas source to be used to deliver precursors of different concentrations and / or amounts into one or more processing chambers to perform different processes simultaneously. These and other embodiments, along with their many advantages and features, may be described in more detail in conjunction with the following description and the accompanying drawings. Brief explanation of the drawing

[0012] Further understanding of the characteristics and advantages of the disclosed technology can be realized by referring to these drawings and the remainder of this specification.

[0013] FIG. 1 illustrates a plan view of one embodiment of an exemplary processing system according to embodiments of the present technology.

[0014] FIG. 2 schematically illustrates one embodiment of an exemplary processing system including a precursor delivery system according to embodiments of the present technology.

[0015] FIG. 3 schematically illustrates an exemplary configuration of a precursor sensor according to embodiments of the present technology.

[0016] FIG. 4 schematically illustrates fluid flow through the precursor sensor of FIG. 3 according to embodiments of the present technology.

[0017] FIGS. 5A and 5B schematically illustrate exemplary radiation intensity measurements according to embodiments of the present technology.

[0018] FIG. 6 illustrates exemplary operations of a method for precursor delivery according to embodiments of the present technology.

[0019] Some of the drawings are included as schematics. It should be understood that the drawings are for illustrative purposes and should not be considered as drawn to actual scale unless specifically stated otherwise. Additionally, as schematics, the drawings are provided for illustrative purposes and may not include all aspects or information compared to actual representations, and may include exaggerated data for illustrative purposes.

[0020] In the attached drawings, similar components and / or features may have the same reference label. Additionally, various components of the same type may be distinguished by having a character that distinguishes similar components follow the reference label. Where only the first reference label is used in this specification, the description is applicable to any component among similar components having the same first reference label, regardless of the character. Specific details for implementing the invention

[0021] In the semiconductor industry, selectivity can refer to the deposition / etching rate of one material relative to another. Gas mixtures delivered into a semiconductor processing chamber can affect selectivity. Gas mixtures can sometimes be stable, but often they can be unstable. The instability of gas mixture delivery may be due to the nature of the gas mixtures, environmental factors, or the configuration of the delivery paths. Instability or fluctuation in gas mixture delivery can be detrimental to the overall processing quality of the film or substrate being processed.

[0022] The technology described herein overcomes these problems by using a light-absorbing sensor to measure and / or monitor the concentration of a precursor contained in a first gas delivered from a gas source. Based on the measured concentration, the flow rate of the first gas and the flow rate of a second gas, which can be used to dilute the first gas and / or correct any variation in the concentration of the precursor, can be adjusted to achieve precise delivery of the precursor into one or more processing chambers. Additionally, by independently adjusting the flow rates of the first gas and the second gas flowing into one or more processing chambers, the technology can enable a single gas source to be used to deliver precursors of different concentrations and / or amounts into one or more processing chambers to perform different processes. While the remainder of the disclosure is routinely about identifying the delivery of specific precursors and diluent gases using the disclosed technology, it will be readily understood that the systems and methods are equally applicable to various other process gases that may be used during semiconductor processing. Accordingly, the technology should not be considered to be limited to the use of only the gases described. Additionally, while light absorption sensors are described herein by way of example, any sensor that can be used to measure the concentration and / or relative ratio of a gas mixture may be used and / or implemented in the present art.

[0023] FIG. 1 illustrates a plan view of one embodiment of a processing system (100) of deposition, etching, baking, and curing chambers according to embodiments. In the drawing, a pair of front opening unified pods (FOUPs; 102) supply substrates of various sizes, the substrates are received by robotic arms (104), and are placed in a low-pressure holding area (106) before being placed in one of the substrate processing chambers (108a to 108f) located in tandem sections (109a to 109c). A second robotic arm (110) may be used to transfer substrate wafers from the holding area (106) to the substrate processing chambers (108a to 108f) and vice versa. Each substrate processing chamber (108a to 108f) may be prepared to perform a number of substrate processing operations, including the dry etching processes and selective deposition described herein, in addition to cyclical layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), wet etching, pre-cleaning, degassing, orientation, and other substrate processes.

[0024] The substrate processing chambers (108a to 108f) may include one or more system components for depositing, annealing, curing, and / or etching a dielectric film on a substrate wafer. In one configuration, two pairs of processing chambers (e.g., 108c and 108d, and 108e and 108f) may be used to deposit a dielectric material or a metal-containing material on the substrate, and a third pair of processing chambers (e.g., 108a and 108b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a to 108f) may be configured to etch a dielectric film on the substrate. Any one or more of the described processes may be performed in chamber(s) separated from the manufacturing system shown in different embodiments.

[0025] In some embodiments, the chambers specifically include at least one etching chamber as well as at least one deposition chamber. By including these chambers in combination on the processing side of the factory interface, all etching and deposition processes can be performed in a controlled environment. For example, a vacuum environment can be maintained on the processing side of the holding area (106), and accordingly, all chambers and transports in the embodiments are maintained under vacuum. This can also limit water vapor and other air components from coming into contact with the substrates being processed. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are considered by the system (100).

[0026] FIG. 2 schematically illustrates one embodiment of an exemplary processing system (200) according to embodiments of the present technology. The processing system (200) may include a first semiconductor processing chamber (202) and a second semiconductor processing chamber (204). In some embodiments, the first semiconductor processing chamber (202) and the second semiconductor processing chamber (204) may be arranged in a tandem section (206) of the processing system (200), similar to the pairs of processing chambers (108) discussed above with reference to FIG. 1. The first processing chamber (202) and the second processing chamber (204) may be configured to perform different processes simultaneously. The processing system (200) may further include a precursor delivery system (208) configured to deliver one or more precursors or gas mixtures into the first semiconductor processing chamber (202) and / or the second semiconductor processing chamber (204). In some embodiments, the precursor delivery system (208) may be configured to deliver one or more precursors or gas mixtures into the first and / or second processing chambers (202, 204) simultaneously and / or independently.

[0027] The precursor delivery system (208) may include a first delivery main line (210) configured to deliver a first gas from a first gas source (212), such as a precursor source. Depending on the gas, the first gas source (212) may include a cylinder or other container for storing the first gas in solid, liquid, and / or gaseous form, which can be vaporized to be delivered through the first delivery main line (210). In some embodiments, the first delivery main line (210) may also be configured to deliver a purge gas, such as nitrogen, from a purge gas source (213), or any other gas suitable for semiconductor processing. Although two gas sources are shown in FIG. 1, the first delivery main line (210) may be configured to deliver only one or more than two gases from one or a number of gas sources.

[0028] The precursor delivery system (208) may further include a first delivery sub-line (214) fluidly coupled to the first delivery main line (210). The first delivery sub-line (214) may be configured to provide fluid access from the first delivery main line (210) to the first processing chamber (202). In some embodiments, the first delivery sub-line (214) may include a flow controller (216), such as a mass flow controller, configured to control the flow rate of the first gas delivered into the first processing chamber (202) through the first delivery sub-line (214). In some embodiments, the precursor delivery system (208) may further include a second delivery sub-line (218) fluidly coupled to the first delivery main line (210). The second delivery sub-line (218) may be configured to provide fluid access from the first delivery main line (210) to the second processing chamber (204). In some embodiments, the second transfer subline (218) may include a flow controller (220), such as a mass flow controller, configured to control the flow rate of the first gas transferred into the second processing chamber (204) through the second transfer subline (218).

[0029] In some embodiments, the precursor delivery system (208) may further include a precursor sensor (224) installed along the first delivery main line (210) and upstream of the first delivery sub-line (214) and the second delivery sub-line (218). In some embodiments, the precursor sensor (224) may include a light absorption sensor. The precursor sensor (224) may be configured to measure the concentration of one or more precursors contained in the first gas delivered through the first delivery main line (210), as will be discussed in more detail below.

[0030] In some embodiments, the precursor delivery system (208) may further include a second delivery main line (226) configured to deliver a second gas from a second gas source (228), such as a dilution gas source. Depending on the gas, the second gas source (228) may include a cylinder or other container for storing the second gas in solid, liquid, and / or gaseous form, which can be vaporized to be delivered through the second delivery main line (226).

[0031] In some embodiments, the precursor delivery system (208) may further include a third delivery sub-line (230) fluidically coupled to the second delivery main line (226). The third delivery sub-line (230) may be configured to provide fluid access from the second delivery main line (226) to the first processing chamber (202). In some embodiments, the third delivery sub-line (230) may include a flow controller (232), such as a mass flow controller, configured to control the flow rate of the second gas flowing into the first processing chamber (202) through the third delivery sub-line (230). In some embodiments, the precursor delivery system (208) may further include a fourth delivery sub-line (234) fluidly coupled to the second delivery main line (226). The fourth delivery sub-line (234) may be configured to provide fluid access from the second delivery main line (226) to the second processing chamber (204). In some embodiments, the fourth transfer subline (234) may include a flow controller (236), such as a mass flow controller, configured to control the flow rate of the second gas flowing into the second processing chamber (204) through the fourth transfer subline (234).

[0032] In the embodiment illustrated in FIG. 2, the third delivery sub-line (230) and the fourth delivery sub-line (234) are described as being fluidly coupled to the second delivery main line (226), but in some embodiments, the second delivery main line (226) may be omitted. In some embodiments, the third delivery sub-line (230) and the fourth delivery sub-line (234) may each be coupled to a dilution gas source. The dilution gas source coupled to the third delivery sub-line (230) and the fourth delivery sub-line (234) may be the same in some embodiments or different in some embodiments.

[0033] Along the first and / or second delivery main lines (210, 226) and / or the first, second, third and / or fourth delivery sub-lines (214, 218, 230, 234), one or more valves may be installed for safety and / or to prevent cross-contamination. In some embodiments, a manual valve and / or safety valve (250) may be installed downstream of the first gas source (212) along the first delivery main line (210). A purge valve (252) may be installed downstream of the purge gas source (213). An upstream valve (254) may be installed downstream of the first gas source (212) and the purge gas source (213) and upstream of the precursor sensor (224). In some embodiments, upstream valves (256a, 256b) may be installed upstream of each flow controller (216, 220) along the first and second transfer sublines (214, 218), and downstream valves (258a, 258b) may be installed downstream of each flow controller (216, 220). Final valves (260a, 260b) may also be installed downstream of the valves (256, 258) and upstream of each of the first and second processing chambers (202, 204). In some embodiments, manual valves (262a, 262b) may be installed downstream of the second gas source (228) along the third and fourth transfer sublines (230, 234), and upstream valves (264a, 264b) may be installed upstream of each manual valve (262a, 262b) and each flow controller (232, 236). Additionally, final valves (266a, 266b) may also be installed downstream of each flow controller (232, 236) and upstream of each of the first and second processing chambers (202, 204) along the third and fourth transfer sublines (230, 234).

[0034] In some embodiments, the precursor delivery system (208) may further include a precursor delivery controller (270). The precursor delivery controller (270) may be communicably coupled with a precursor sensor (224) and may be configured to receive measurements from the precursor sensor (224) indicating the concentration of one or more precursors contained in the first gas. The precursor delivery controller (270) may also be communicably coupled with flow controllers (216, 220, 232, 236) and may be configured to independently control each of the flow controllers (216, 220, 232, 236) to adjust the respective flow rates of the first and / or second gases flowing into the first and / or second processing chambers (202, 204) to deliver gas mixtures according to one or more semiconductor processing recipes. Specifically, in some embodiments, the precursor transfer controller (270) may be additionally coupled to communicate with a processing recipe data store (272). The processing recipe data store (272) may be configured to store semiconductor processing recipes that may include processing settings such as flow rates of one or more precursors and / or diluent gases, concentrations of one or more precursors, processing pressure, processing temperature, etc. The precursor transfer controller (270) may be configured, among other things, to retrieve or obtain processing recipe settings from the processing recipe data store (272). Based on the measured concentrations of one or more precursors of the first gas and the retrieved processing settings, the precursor transfer controller (270) may control and / or adjust one or more of the flow controllers (216, 220, 232, 236) independently of each other to deliver the gas mixture into the first and / or second processing chambers (202, 204) accordingly.

[0035] As mentioned above, gas mixtures may be unstable due to chemical properties, environmental factors, delivery path configurations, etc. For example, the first gas may contain a precursor such as diborane (B2H6) which can be diluted with a diluent gas such as hydrogen (H2) at a specified concentration, e.g., about 10% to about 30%, which may be higher than the processing settings of various processing recipes. However, the delivered concentration of the precursor from the first gas source (212) may deviate from the specified concentration for various reasons. Such deviation in the concentration of the delivered precursor may result in variations in the amount and / or concentration of the precursor delivered into the first and / or second processing chambers (202, 204) to process the semiconductor substrates contained therein. Variations in the amount and / or concentration of the delivered precursor may be detrimental to the quality of the substrates being processed, e.g., the quality of the films.

[0036] To limit or prevent variations in the amount of precursor delivered into the first and / or second processing chambers (202, 204), the concentration of the precursor delivered from the first gas source (212) may be monitored and / or measured using a precursor sensor (224). The measured concentration of the precursor may be used to further dilute the first gas containing the precursor using a second gas, which may be hydrogen (H2), so that a precise amount of the precursor can be delivered into the first and / or second processing chambers (202, 204) according to the processing settings.

[0037] Specifically, in some embodiments, based on the measured concentration of the precursor contained in the first gas, the precursor delivery controller (270) may be configured to control the flow controller (216) and the flow controller (232) to control the flow rate of the first gas and the flow rate of the second gas, respectively, flowing into the first processing chamber (202). By controlling the flow rates of the first gas and the second gas flowing into the first processing chamber (202) based on the measured concentration of the precursor, an accurate and precise amount of the precursor can be delivered into the first processing chamber (202) according to the first recipe processing setting. Similarly, based on the measured concentration of the precursor contained in the first gas, the precursor delivery controller (270) may be further configured to control the flow controller (220) and the flow controller (236) to control the flow rate of the first gas and the flow rate of the second gas, respectively, flowing into the second processing chamber (204). By controlling the flow rates of the first gas and the second gas flowing into the second processing chamber (204) based on the measured concentration of the precursor, an accurate and precise amount of the precursor can be delivered into the second processing chamber (204) according to the second recipe processing setting value.

[0038] As mentioned above, the first processing chamber (202) and the second processing chamber (204) may be configured to perform different processes simultaneously and / or independently of each other. For example, by controlling the flow controllers (216, 220, 232, 236) independently of each other, different gas mixtures having precursors of different concentrations may be delivered into the first and / or second processing chambers (202, 204). For example, while a first gas mixture of a first gas and a second gas may be delivered into the first processing chamber (202), a second gas mixture of a first gas and a second gas may be delivered into the second processing chamber (204), and the first and second gas mixtures may contain precursors of different concentrations. The different concentrations may be specified by the respective processing settings for the first processing chamber (202) and the second processing chamber (204).

[0039] There are several advantages associated with the precursor delivery system (208) described herein. By controlling the flow rates of the first and second gases delivered into different processing chambers, e.g., first and / or second processing chambers (202, 204), precursors of different amounts and / or concentrations can be delivered into the different processing chambers. Additionally, mixtures of the first and second gases can be delivered at different total flow rates according to different recipes and / or processing settings. Furthermore, the processing system (200) may allow a single gas source, e.g., a first gas source (212), to be used to deliver precursors of different levels or concentrations into the different processing chambers to perform different processes according to different processing recipe settings, instead of using multiple gas sources when multiple processes are performed in multiple chambers. Furthermore, by measuring the concentration of the precursor delivered from the gas source, precise control of the amount and / or concentration of the delivered precursor can be achieved, and instability and / or drift of the amount of precursor delivered into the processing chamber can be avoided. Although only two processing chambers (202, 204) are shown in FIG. 2, it should be noted that the processing system (200) may include only one or more than two processing chambers. The precursor delivery system (208) may be configured to deliver precursors of different amounts and / or concentrations from a single gas source into different processing chambers, such as three, four, five, six, etc., simultaneously and / or independently of each other.

[0040] FIG. 3 schematically illustrates an exemplary configuration of a precursor sensor (224) according to embodiments of the present technology. The precursor sensor (224) may include a light absorption sensor such as a non-dispersive infrared sensor. However, any sensor that can be used to measure the concentration and / or relative ratio of a gas mixture may be used and / or implemented in the present technology. In some embodiments, the precursor sensor (224) may include an elongate optical cell (300). The optical cell (300) may include an inlet (302) that may be positioned near a first end (304) of the optical cell (300). The first end (304) of the optical cell (300) may be limited by an optical filter as described in more detail below. The inlet (302) may provide fluid access from a first gas source (212) to the optical cell (300). The optical cell (300) may further include an outlet (306) positioned near the second end (308) of the optical cell (300). The second end (308) of the optical cell (300) may be defined by an optical window as described in more detail below. The outlet (306) may provide fluid access to first and / or second transfer sublines (214, 218) downstream from the optical cell (300). In some embodiments, the optical cell (300) may be manufactured from a metal such as stainless steel, aluminum, aluminum oxide, or aluminum nitride, with or without surface coatings or treatments such as anodizing. Other suitable materials for manufacturing the optical cell (300) may be selected based on fluid flow through the optical cell (300) and various other considerations.

[0041] The precursor sensor (224) may further include a light source (310) and a light detector (312) disposed at opposite ends of the optical cell (300). An optical filter (314) defining the first end (304) of the optical cell (300) may be disposed between the optical cell (300) and the light detector (312). An optical window (316) defining the second end (308) of the optical cell (300) may be disposed between the optical cell (300) and the light source (310). In the embodiment illustrated in FIG. 3, the light source (310) may be disposed near the exit (306) at the second end (308) of the optical cell (300), and the light detector (312) may be disposed near the inlet (302) at the first end (304) of the optical cell (300). In some embodiments, the light source (310) may be positioned near the inlet (302) at the first end (304) of the optical cell (300), and the light detector (312) may be positioned near the outlet (306) at the second end (308) of the optical cell (300). Although the drawings show the inlet (302) and / or outlet (306) being positioned on the side wall of the optical cell (300) and oriented obliquely with respect to the longitudinal axis of the optical cell (300), the inlet (302) and / or outlet (306) may be positioned at any suitable location of the optical cell (300), such as opposite ends of the optical cell (300), and / or may be oriented parallel to the longitudinal axis of the optical cell (300).

[0042] The light source (310) and the photodetector (312) may be placed in the light source compartment (318) and the photodetector compartment (320), respectively. In some embodiments, the light source compartment (318) and the photodetector compartment (320) may each include a common cross-section such as an optical cell (300) which may have a circular, elliptical, polygonal shape, e.g., a triangle, a square, a rhombus, a rectangle, a pentagon, a hexagon, or any suitable shape. Thus, the light source compartment (318), the optical cell (300), and the photodetector compartment (320) may define the elongated body of the precursor sensor (224). In some embodiments, at least one of the light source compartment (318) and / or photodetector compartment (320) may have a cross-sectional size and / or shape different from that of the optical cell (300) to accommodate various light sources (310) and / or photodetectors (312) that can be used for the precursor sensor (224).

[0043] The optical cell (300) can define a linear light path for light emitted from the light source (310). The light source (310), optical window (316), optical cell (300), optical filter (314), and light detector (312) can be aligned along the longitudinal axis of the optical cell (300) so that light emitted from the light source (310) can travel through the optical cell (300) and be detected by the light detector (312). Thus, when the first gas can flow through the optical cell (300), the first gas can be analyzed, for example, using light absorption. For example, the level or concentration of a precursor contained in the first gas, such as the level or concentration of diborane contained in the first gas, can be measured. The measured level or concentration of the precursor may additionally be used to control flow controllers (216, 220, 232, 236) to ensure that the precursor of precise amounts and / or concentrations can be delivered into the first and / or second processing chambers (202, 204).

[0044] In some embodiments, the precursor sensor (224) may further include one or more sensors (324), such as a pressure sensor and / or a temperature sensor, configured to measure pressure and / or temperature inside the optical cell (300). In FIG. 3, one or more sensors (324) are positioned together and placed on the cell wall of the optical cell (300), but in some embodiments, one or more sensors (324) may be placed at separate locations, such as different locations on the cell wall of the optical cell (300), an inlet (302), an outlet (306), or any other location suitable for measuring temperature and / or pressure inside the optical cell (300). The precursor sensor (224) may further include a light source (310), a photodetector (312), and / or other electronic or electrical components, such as a circuit board (326) that electrically connects one or more sensors (224). In some embodiments, various components of the precursor sensor (224) described herein may be accommodated within a sensor enclosure.

[0045] FIG. 4 schematically illustrates a fluid flowing through a precursor sensor (224) according to embodiments of the present technology and being analyzed by the precursor sensor (224). The fluid flow may be or may include a first gas (328) flowing from a first gas source (212) into an optical cell (300) through an inlet (302). Next, the first gas (328) may be directed to flow through the optical cell (300) toward an outlet (306) along the longitudinal axis of the optical cell (300). Light (not shown in FIG. 4) may be emitted from a light source (310) and may travel through the optical cell (300) filled with the first gas (328). A portion of the light may be absorbed by the first gas (328), for example, by a diborane contained in the first gas (328). Next, the concentration of diborane contained in the first gas (328) can be analyzed based on the absorption of light by the first gas (328) using a photodetector (312).

[0046] To facilitate the measurement of the level or concentration of diborane, the optical window (316) may be configured to allow light that can be absorbed by diborane to pass from the light source (310). For example, in some embodiments, the optical window (316) may be configured to allow light, such as infrared light, to pass through and enter the optical cell (300). Infrared light passing through the optical window (316) is approximately 400 cm -1 to about 3,000 cm -1 It may have a wavenumber in the range or a wavelength in the range of about 2 µm to about 30 µm. These ranges may include a number of absorption wavelengths specific to diborane, which is 1,600 ± 100 cm⁻¹. -1 , 2,520±100 cm -1 It may include infrared having wavenumbers and / or other characteristic wavenumbers, or infrared having wavelengths of 3,968±100 nm, 6,250±100 nm and / or other characteristic wavelengths.

[0047] In some embodiments, the optical window (316) may be selected and / or configured to allow radiation that may include some absorption wavelengths specific to diborane to pass through. In some embodiments, the optical window (316) may be selected and / or configured to allow radiation that may include only a single absorption wavelength specific to diborane to pass through. In some embodiments, the optical window (316) is about 1,000 cm -1 to about 2,000 cm -1 Range, approximately 1,200 cm -1 to about 2,800 cm -1 Range, approximately 2,000 cm -1 to about 3,200 cm -1 It may be configured to allow infrared radiation having a wavenumber of a range, or any other suitable range. Exemplary materials suitable for the optical window (316) may include potassium bromide, sapphire, barium fluoride, germanium, or any other suitable material capable of allowing radiation absorbable by diborane to pass through. The material for the optical window (316) may also be selected and / or configured to be corrosion-resistant. During semiconductor processing, various gases or precursors used may be corrosive. The exemplary materials described herein not only allow radiation absorbable by diborane to pass through, but also have resistance to corrosion caused by various gases flowing through them, thereby extending the operating life of the precursor sensor (224).

[0048] In some embodiments, to facilitate the measurement of the level or concentration of diborane, the optical filter (314) may be selected and / or configured to allow radiation containing a single absorption wavelength specific to diborane to pass through. For example, the filter (314) is 1,600 ± 100 cm -1 , 2,520±100 cm -1Infrared radiation having any wavenumber of the wavenumbers of and / or other wavenumbers specific to diborane absorption, or infrared radiation having any wavelength of 3,968 ± 100 nm, 6,250 ± 100 nm, and / or other characteristic wavelengths specific to diborane absorption, may be selected and / or configured to allow. In some embodiments, the filter (314) may be selected and / or configured to allow radiation including more than one absorption wavelength specific to diborane to pass through. Similar to the optical window (316), various materials suitable for the filter (314) may also have resistance to corrosion by various gases flowing through the optical cell (300). As described herein, the optical window (316) and / or filter (314) may be specifically selected or configured to detect diborane. Effective detection of the level or concentration of diborane under conditions suitable for semiconductor processing may not be achieved without specifically configuring or selecting the optical window (316) and / or filter (314) as described herein.

[0049] In some embodiments, the fluid flowing through the optical cell (300) may contain one or more precursors instead of or in addition to diborane. One or more precursors may include tetraborane, arsine, and / or phosphine, etc. The optical window (316) and / or filter (314) may be further configured to facilitate the detection of one or more levels or concentrations of tetraborane, arsine, phosphine, etc. For example, the optical window (316) may be configured to allow radiation that may include one or more absorption wavelengths specific to tetraborane, arsine, phosphine, and / or other precursors that may be included in the first gas. The filter (314) may be configured to allow radiation that includes one or more absorption wavelengths specific to tetraborane, arsine, phosphine, and / or other precursors for detecting levels or concentrations thereof.

[0050] The photodetector (312) may be configured to detect a decrease in the intensity of incident light at wavelengths or wavelengths specific to precursor absorption to determine the intensity of incident light, more specifically, the level or concentration of precursors such as diborane, tetraborane, arsine, phosphine and / or other precursors. FIGS. 5a and 5b schematically illustrate the detected radiation intensity according to embodiments of the present invention. The signal (502) in both FIGS. 5a and 5b may represent a reference signal (502) that can be consistently maintained during normal operation of the precursor sensor (224). The reference signal (502) may decrease due to the degradation of the light source (310). Thus, the reference signal (502) may be used to perform sensor integrity checks and / or periodic baseline checks. The signal (504) in FIGS. 5a and 5b may represent the intensity of radiation detected by a photodetector (312) for measuring the level or concentration of one or more precursors of interest that may flow through the optical cell (300). FIG. 5a schematically illustrates embodiments in which the fluid may not flow through the optical cell (300) or the fluid flowing through the optical cell (300) may not absorb any radiation emitted from the light source (310). Thus, a decrease in the intensity signal (504) may not be detected. FIG. 5b schematically illustrates embodiments in which the fluid passing through the optical cell (300) may absorb at least some of the radiation, as indicated by a decrease (506) in radiation intensity measured by the photodetector (312). For example, the fluid flowing through the optical cell (300) may be or may contain a first gas flowing from the processing chamber (102), and thus may contain diborane in some embodiments. Then, due to the presence of diborane, a decrease (506) in radiation intensity at an absorption wavelength specific to diborane may be detected.The reduction (506) appears at or near only one wavelength, but depending on the configuration of the light source (310) and / or the photodetector (312), a reduction at or near multiple wavelengths may be detected. The detected reduction in radiation intensity due to absorption may be used to determine the level or concentration of diborane contained in the first gas. In some embodiments, the level or concentration of diborane may be expressed as a partial pressure of diborane. Thus, based on the radiation intensity measurements, the partial pressure of diborane contained in the first gas may be determined.

[0051] In some embodiments, the pressure of the first gas flowing through the optical cell (300) may be relatively low and may be in the range of about 1 mTorr to about 10 Torr, for example, about 1 mTorr to about 5 Torr, about 1 mTorr to about 4 Torr, about 1 mTorr to about 3 Torr, about 1 mTorr to about 2 Torr, or about 1 mTorr to about 1 Torr. Many conventional diborane detectors may not operate under these low pressure ranges. In contrast, the configuration of the precursor sensor (224) described herein can effectively detect diborane contained in the first gas at relatively low pressure ranges. For example, the precursor sensor (224) described herein can effectively detect a partial pressure of diborane that may be about 100 ppm (parts per million) or less, about 90 ppm or less, about 80 ppm or less, about 70 ppm or less, about 60 ppm or less, about 50 ppm or less, about 40 ppm or less, about 30 ppm or less, about 20 ppm or less, about 10 ppm or less, about 5 ppm or less, about 3 ppm or less, about 1 ppm or less, or lower.

[0052] In some embodiments, the detected partial pressure of diborane is about 1 ppm to about 900,000 ppm, e.g., about 1 ppm to about 500,000 ppm, about 1 ppm to about 100,000 ppm, about 1 ppm to about 50,000 ppm, about 1 ppm to about 10,000 ppm, about 1 ppm to about 5,000 ppm, about 1 ppm to about 3,000 ppm, about 1 ppm to about 1,000 ppm, about 1 ppm to about 500 ppm, about 1 ppm to about 400 ppm, about 1 ppm to about 300 ppm, about 1 ppm to about 200 ppm, about 1 ppm to about 100 ppm, about 1 ppm to about 90 ppm, about 1 ppm to about 80 It may be in the range of ppm, about 1 ppm to about 70 ppm, about 1 ppm to about 60 ppm, about 1 ppm to about 50 ppm, about 1 ppm to about 40 ppm, about 1 ppm to about 30 ppm, about 1 ppm to about 20 ppm, about 1 ppm to about 10 ppm, about 1 ppm to about 5 ppm, or about 1 ppm and about 3 ppm.

[0053] Although a light absorption sensor is described herein as an example of a precursor sensor (224), in some embodiments, the precursor sensor (224) may be an acoustic sensor or include such a sensor. The acoustic sensor may measure the concentration of the precursor by transmitting a high-frequency, for example, MHz-range diffuse-spectral acoustic signal through a gas flowing through the sensor. The maximum possible time delay between a first received signal and its echo may be calculated. Based on the maximum possible time delay, the speed of sound of the gas flowing through the sensor may be calculated. Based on the calculated speed of sound, the concentration of the precursor contained in the gas may be determined.

[0054] The processing systems previously discussed may be used to perform exemplary semiconductor methods. FIG. 6 illustrates exemplary operations of a precursor delivery method (600) according to embodiments of the present technology. The delivered precursor may be used in various semiconductor processes including deposition and / or etching. Some or all of the operations may be performed using chambers and / or systems as previously described, or may be performed in different chambers and / or systems.

[0055] The method (600) may be initiated in operation (605) by flowing a first gas from a first gas source through a first transfer main line of a semiconductor processing system, such as the first transfer main line (210) of the semiconductor processing system (200) described above. The first gas may include a precursor and a diluent gas. In some embodiments, the precursor may include diborane. In some embodiments, the diluent gas may include hydrogen. In some embodiments, the first transfer main line may be fluidly coupled to a first transfer sub-line and a second transfer sub-line, such as a first transfer sub-line (214) and a second transfer sub-line (218), downstream of the first transfer main line. The first transfer sub-line may be configured to provide fluid access from the first transfer main line to a first semiconductor processing chamber, such as a first processing chamber (202) of the processing system (200). The second transfer sub-line may be configured to provide fluid access from the first transfer main line to a second semiconductor processing chamber, such as the second processing chamber (204) of the processing system (200). Thus, the first and second chambers may be configured to perform different semiconductor processes simultaneously.

[0056] In operation (610), the concentration of a precursor contained in a first gas delivered through a first delivery main line can be measured. The concentration of the precursor can be measured using a light absorption sensor such as the precursor sensor (224) described above with reference to FIG. 3. Accordingly, in some embodiments, the light absorption sensor may include an elongated optical cell such as the optical cell (300) described above. The optical cell may be configured to direct the first gas to flow through at least a portion of the optical cell along the longitudinal axis of the optical cell while the concentration of the precursor contained in the first gas can be measured. In some embodiments, the light absorption sensor may include an optical filter such as the optical filter (314) described above that can define a first end of the elongated optical cell. The light absorption sensor may also include an optical window such as the optical window (316) described above that can define a second end of the elongated optical cell opposite to the first end of the optical cell. The light absorption sensor may further include a light detector such as a photodetector (312) and a light source such as a light source (310) disposed at opposing first and second ends of the optical cell. To facilitate the detection of a precursor such as diborane, the optical window is approximately 400 cm -1 to about 3,000 cm -1 It can be configured to allow radiation having wavenumbers in the range to enter the optical cell through an optical window. The optical filter is configured for radiation specific to diborane absorption, e.g., 1,600 ± 100 cm⁻¹ -1 , 2,520±100 cm -1 , or it may be configured to allow radiation having at least one wavenumber among other wavenumbers specific to diborane absorption to pass through and be detected by a photodetector.

[0057] In some embodiments, in operation (615), the second gas may flow from the second gas source through a second transfer main line, such as the second transfer main line (226) of the processing system (200) described above. The second gas may include a diluent gas such as hydrogen. The second transfer main line may be fluidly coupled with a third transfer sub-line and a fourth transfer sub-line, such as the third transfer sub-line (230) and the fourth transfer sub-line (234), downstream of the second transfer main line. The third transfer sub-line may be configured to provide fluid access from the second transfer main line to the first semiconductor processing chamber. The fourth transfer sub-line may be configured to provide fluid access from the second transfer main line to the second semiconductor processing chamber.

[0058] In operation (620), the first flow rate of the first gas delivered through the first delivery subline may be adjusted at least partially based on the measured concentration of the precursor. In operation (625), the second flow rate of the first gas delivered through the second delivery subline may also be adjusted at least partially based on the measured concentration of the precursor. In some embodiments, the method may further include, in operation (630), the step of adjusting the first flow rate of the second gas delivered through the third delivery subline at least partially based on the measured concentration of the precursor, and in operation (635), the step of adjusting the second flow rate of the second gas delivered through the fourth delivery subline at least partially based on the measured concentration of the precursor. The adjustments may be made by controlling flow controllers, such as mass flow controllers installed along each of the first, second, third, and fourth delivery sublines, such as the flow controllers (216, 220, 232, 236) described above. Flow controllers may be coupled to communicate with a precursor transfer controller, such as the aforementioned precursor transfer controller (270). The precursor transfer controller may be configured to receive processing recipe settings from a processing recipe data repository, such as a processing recipe data repository (272), and to receive a measured concentration of the precursor from a light absorption sensor. The processing settings may specify the concentration of the precursor in a gas mixture delivered into each processing chamber to perform various semiconductor processes, the flow rate of one or more gases flowing into the processing chamber, etc. Based on the measured concentration of the precursor and the processing recipe settings, the precursor transfer controller may control the flow rates of the first and / or second gases delivered through the first, second, third and / or fourth sublines.

[0059] In operation (640), a first gas mixture of a first gas delivered through a first delivery sub-line and a second gas delivered through a third delivery sub-line may be delivered to a first semiconductor processing chamber according to a first recipe setting value. The first recipe setting value may limit or specify a first concentration of a precursor contained in the first mixture of the first gas and the second gas. In operation (645), a second mixture of a first gas delivered through a second delivery sub-line and a second gas delivered through a fourth delivery sub-line may be delivered to a second semiconductor processing chamber according to a second recipe setting value. The second recipe setting value may limit or specify a second concentration of a precursor contained in the second mixture of the first gas and the second gas. The first and second recipe settings values ​​may be the same or different from each other. As mentioned above, in some embodiments, the first and second processing chambers may be configured to perform different processing recipes simultaneously. Accordingly, the first gas mixture and the second gas mixture can be simultaneously delivered to the first semiconductor processing chamber and the second semiconductor processing chamber, respectively, to perform different processes that can utilize precursors of different amounts and / or concentrations.

[0060] In the preceding description, many details have been described for the purpose of explanation to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0061] While some embodiments are disclosed, it will be recognized by those skilled in the art that various modifications, alternative configurations, and equivalents may be used without departing from the spirit of the embodiments. Additionally, to avoid unnecessarily obscuring the art, many well-known processes and elements have not been described. Therefore, the foregoing description should not be construed as limiting the scope of the art. Additionally, while methods or processes may be described sequentially or stepwise, it should be understood that operations may be performed simultaneously or in an order different from that listed.

[0062] Where a range of values ​​is given, each value existing between the upper limit and the lower limit of such range is interpreted as also specifically described up to one-tenth of the unit value of the smallest digit of the lower limit, unless otherwise clearly indicated in the context. Any narrower range is included between any specified values ​​or unspecified intermediate values ​​of a specified range and any other specified value or intermediate value of said specified range. The upper and lower limit values ​​of such sub-ranges may independently be included in or excluded from such ranges, and each range is also included in the invention insofar as any specifically excluded limit value is in the specified range, whether one or both of the upper and lower limit values ​​are included in such sub-ranges or both are excluded from such sub-ranges. Where a specified range includes one or both of the limitations, ranges excluding either or both of the included limitations are also included.

[0063] As used herein and in the appended claims, singular forms include plural objects unless the context clearly indicates otherwise. Thus, for example, a reference to "precursor" includes plural such precursors, and a reference to "layer" includes one or more layers and equivalents thereof known to those skilled in the art.

[0064] Additionally, as used in this specification and the following claims, the words “comprising,” “comprising,” “containing,” “containing,” “equipping,” and “equipping” are intended to specify the presence of the specified features, integers, components, or actions, but do not exclude the presence or addition of one or more other features, integers, components, actions, behaviors, or groups.

Claims

Claim 1 As a method, a first gas comprising a precursor and a diluent gas is flowed through a first delivery main line — said first delivery main line is fluidly coupled to a first delivery subline and a second delivery subline downstream of said first delivery main line, said first delivery subline is configured to provide fluid access from said first delivery main line to a first semiconductor processing chamber, and said second delivery subline is configured to provide fluid access from said first delivery main line to a second semiconductor processing chamber —; a step of measuring the concentration of said precursor contained in said first gas delivered through the first delivery main line; a step of adjusting a first flow rate of said first gas delivered through the first delivery subline based at least partially on the measured concentration of said precursor; a step of adjusting a second flow rate of said first gas delivered through the second delivery subline based at least partially on the measured concentration of said precursor; a first recipe A method comprising: a step of delivering a first mixture of a second gas including the first gas and the dilution gas, delivered through the first delivery sub-line, to the first semiconductor processing chamber according to a recipe set point; and a step of delivering a second mixture of the first gas and the second gas, delivered through the second delivery sub-line, to the second semiconductor processing chamber according to a second recipe set point — wherein the first mixture and the second mixture are each delivered simultaneously to the first semiconductor processing chamber and the second semiconductor processing chamber, respectively. Claim 2 A method according to claim 1, wherein the precursor comprises diborane. Claim 3 In claim 1, the diluting gas comprises hydrogen. Claim 4 A method according to claim 1, wherein the concentration of the precursor is measured using an optical absorption sensor. Claim 5 A method according to claim 4, wherein the light absorption sensor comprises an elongate optical cell, and the elongate optical cell is configured to direct the first gas to flow through at least a portion of the elongate optical cell along the longitudinal axis of the elongate optical cell while the concentration of the precursor contained in the first gas is measured by the light absorption sensor. Claim 6 In claim 5, the light absorption sensor includes an optical filter defining a first end of the elongated optical cell, and the optical filter is 1,600 ± 100 cm -1 or 2,520±100 cm -1 A method configured to allow infrared rays having one or more of the wavenumbers to pass through. Claim 7 In claim 5, the light absorption sensor includes an optical window defining a second end of the elongated optical cell, and the light entering the elongated optical cell through the optical window is 400 cm -1 to 3,000 cm -1 A method comprising infrared rays having a range of wavenumbers. Claim 8 A method according to claim 1, wherein the first recipe setting value limits the first concentration of the precursor contained in the first mixture of the first gas and the second gas, and the second recipe setting value limits the second concentration of the precursor contained in the second mixture of the first gas and the second gas. Claim 9 In claim 1, the step of flowing the second gas through a second delivery main line — the second delivery main line is fluidly coupled to a third delivery sub-line and a fourth delivery sub-line downstream of the second delivery main line, the third delivery sub-line is configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber, and the fourth delivery sub-line is configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber —; the step of adjusting a first flow rate of the second gas delivered through the third delivery sub-line based at least partially on a measured concentration of the precursor; The method further comprises the step of adjusting a second flow rate of the second gas delivered through the fourth delivery subline based at least partially on the measured concentration of the precursor; the step of delivering a first mixture of the first gas and the second gas delivered through the first delivery subline comprises the step of delivering a first mixture of the first gas delivered through the first delivery subline and the second gas delivered through the third delivery subline; and the step of delivering a second mixture of the first gas and the second gas delivered through the second delivery subline comprises the step of delivering a second mixture of the first gas delivered through the second delivery subline and the second mixture of the second gas delivered through the fourth delivery subline. Claim 10 As a precursor delivery system, a first delivery main line configured to deliver a first gas; a precursor sensor configured to measure the concentration of a precursor contained in the first gas delivered through the first delivery main line; a first delivery sub-line and a second delivery sub-line fluidically coupled to the first delivery main line downstream of the first delivery main line — the first delivery sub-line is configured to provide fluid access from the first delivery main line to a first semiconductor processing chamber, and the second delivery sub-line is configured to provide fluid access from the first delivery main line to a second semiconductor processing chamber; the first delivery sub-line includes a first flow controller configured to control a first flow rate of the first gas flowing into the first semiconductor processing chamber, and the second delivery sub-line includes a second flow controller configured to control a second flow rate of the first gas flowing into the second semiconductor processing chamber —; A precursor delivery system comprising: a precursor sensor, a first flow controller, and a second flow controller coupled to be communicable with the precursor sensor, the first flow controller, and the second flow controller, wherein the precursor delivery controller is configured to control the first flow controller based on a measured concentration of the precursor to deliver a first mixture of the first gas and the second gas to the first semiconductor processing chamber according to a first recipe setting value, and wherein the precursor delivery controller is further configured to control the second flow controller based on a measured concentration of the precursor to deliver a second mixture of the first gas and the second gas to the second semiconductor processing chamber according to a second recipe setting value. Claim 11 In claim 10, the precursor delivery system is configured to simultaneously deliver the first mixture to the first semiconductor processing chamber and the second mixture to the second semiconductor processing chamber. Claim 12 A precursor delivery system according to claim 10, wherein the precursor comprises diborane, the first gas further comprises hydrogen, and the second gas comprises hydrogen. Claim 13 In claim 10, the precursor sensor comprises a light absorption sensor, in a precursor delivery system. Claim 14 A precursor delivery system according to claim 13, wherein the light absorption sensor comprises an elongated optical cell, and the elongated optical cell is configured to direct the first gas to flow through at least a portion of the elongated optical cell along the longitudinal axis of the elongated optical cell while the concentration of the precursor contained in the first gas is measured by the light absorption sensor. Claim 15 In claim 14, the light absorption sensor includes an optical filter defining a first end of the elongated optical cell, and the optical filter is 1,600 ± 100 cm -1 or 2,520±100 cm -1 A precursor delivery system configured to allow infrared rays having one or more of the wavenumbers to pass through. Claim 16 In claim 14, the light absorption sensor includes an optical window defining a second end of the elongated optical cell, and the light entering the elongated optical cell through the optical window is 400 cm -1 to 3,000 cm -1 A precursor delivery system comprising infrared rays having a range of wavenumbers. Claim 17 In claim 14, the light absorption sensor further comprises at least one of a pressure sensor configured to measure the pressure inside the elongated optical cell or a temperature sensor configured to measure the temperature inside the elongated optical cell, in a precursor delivery system. Claim 18 In claim 10, the precursor delivery system comprises a second delivery main line configured to deliver the second gas; and a third delivery sub-line and a fourth delivery sub-line fluidly coupled to the second delivery main line downstream of the second delivery main line — the third delivery sub-line is configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber, and the fourth delivery sub-line is configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber, the third delivery sub-line includes a third flow controller configured to control a first flow rate of the second gas flowing into the first semiconductor processing chamber, and the fourth delivery sub-line includes a fourth flow controller configured to control a second flow rate of the second gas flowing into the second semiconductor processing chamber —; further comprising; the precursor delivery controller is additionally coupled to communicate with the third flow controller and the fourth flow controller, and the precursor delivery controller is additionally configured to control the third flow controller based on a measured concentration of the precursor to deliver the first mixture to the first semiconductor processing chamber according to a first recipe setting value, and A precursor delivery system, wherein the precursor delivery controller is further configured to control the fourth flow controller based on the measured concentration of the precursor to deliver the second mixture to the second semiconductor processing chamber according to a second recipe setting value. Claim 19 A precursor delivery system according to claim 10, wherein the first recipe setting value limits the first concentration of the precursor contained in the first mixture of the first gas and the second gas, and the second recipe setting value limits the second concentration of the precursor contained in the second mixture of the first gas and the second gas. Claim 20 A semiconductor processing system comprising: a first semiconductor processing chamber and a second semiconductor processing chamber arranged in a tandem section of the semiconductor processing system; and a precursor delivery system, wherein the precursor delivery system comprises: a first delivery main line configured to deliver a first gas — the first delivery main line is fluidically coupled to a first delivery sub-line and a second delivery sub-line, wherein the first delivery sub-line includes a first flow controller and is configured to provide fluid access from the first delivery main line to the first semiconductor processing chamber, and the second delivery sub-line includes a second flow controller and is configured to provide fluid access from the first delivery main line to the second semiconductor processing chamber —; a light absorption sensor installed along the first delivery main line and configured to measure the concentration of a precursor contained in the first gas; a second delivery main line configured to deliver a second gas — the second delivery main line is fluidly coupled to a third delivery sub-line and a fourth delivery sub-line, wherein the third delivery sub-line includes a third flow controller and is configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber, and the fourth delivery sub-line includes a fourth flow controller and the second delivery Configured to provide fluid access from the main line to the second semiconductor processing chamber —;A semiconductor processing system comprising: a precursor transfer controller coupled to communicate with the light absorption sensor and the first, second, third, and fourth flow controllers; wherein the precursor transfer controller is configured to control the first and third flow controllers based on the measured concentration of the precursor to transfer a first mixture of the first gas and the second gas to the first semiconductor processing chamber according to a first recipe setting value, and wherein the precursor transfer controller is further configured to control the second and fourth flow controllers based on the measured concentration of the precursor to transfer a second mixture of the first gas and the second gas to the second semiconductor processing chamber according to a second recipe setting value, and wherein the precursor transfer system is configured to transfer the first mixture and the second mixture simultaneously.

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