Film stress control for plasma enhanced chemical vapor deposition

Abstract

Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large-area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators are disposed within the showerhead, wherein one of the plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Additionally, a DC bias power source is coupled to the substrate support assembly.

Description

Technology Field

[0001] The embodiments of the present disclosure generally relate to methods and apparatus for processing large-area substrates. More specifically, the embodiments of the present disclosure relate to chemical vapor deposition systems and methods for fabricating devices. Background Technology

[0002] In the manufacture of displays, many processes are used to form electronic devices on substrates, such as LCD (liquid crystal display) and / or OLED (organic light emitting diode) substrates, by depositing thin films on these substrates. Deposition is generally achieved by introducing a precursor gas into a vacuum chamber in which the substrate is placed on a temperature-controlled substrate support. The precursor gas is typically directed through a gas distribution plate positioned near the top of the vacuum chamber. The precursor gas in the vacuum chamber can be excited into a plasma by applying RF (radio frequency) power from one or more RF sources coupled to the chamber to a conductive showerhead placed in the chamber. The excited gas reacts to form a layer of material on the surface of the substrate positioned on the temperature-controlled substrate support.

[0003] Typically, in conventional chambers, plasma is formed using capacitively coupled electrode arrangements for deposition on large-area substrates. Recently, interest has been explored in multi-coil inductively coupled plasma (ICP) arrangements, which have historically been utilized for deposition on round substrates or wafers, for use in deposition processes on these large-area substrates. In such inductively coupled plasma arrangements used for large-area high-density plasma chemical vapor deposition (HDP-CVD), RF power can be applied beneath the substrate to control the inherent film stress of individual film layers of the semiconductor device being fabricated. Lower inherent film stress is required to reduce film damage (e.g., cracking and debonding of films) in relation to the finished device. However, conventional inductive coupling arrangements utilize dielectric materials, and these dielectric materials enable RF power applied beneath the substrate to penetrate the plasma processing zone and couple with the conductive showerhead frame positioned above. The penetration of RF power into the processing zone causes variance in stress characteristics between regions of films deposited directly beneath the showerhead coils and regions of films deposited directly beneath the showerhead frame.

[0004] Accordingly, what is needed in the industry are improved methods and devices for controlling film stress during large-area high-density plasma deposition.

[0005] The embodiments of the present disclosure relate to methods and apparatus for processing large-area substrates. More specifically, the embodiments of the present disclosure relate to chemical vapor deposition systems and methods for fabricating devices.

[0006] In one embodiment, a plasma deposition chamber is provided. The plasma deposition chamber comprises a showerhead, a plurality of dielectric plates, a plurality of inductive coils, and a substrate support assembly. The showerhead comprises a plurality of perforated members, and each of the plurality of perforated members is coupled to one or more of the plurality of support members. The support members provide precursor gases to a volume formed between the inductive coils and the perforated members. The substrate support assembly comprises an electrostatic chuck assembly, an insulating layer, and a substrate bias plate. The substrate bias plate is coupled to a DC type power source and a low-pass filter.

[0007] In one embodiment, a method for depositing films on a substrate is provided. The method comprises the steps of flowing a precursor gas into a plurality of gas volumes of a showerhead, varying the flow of the precursor gas into each of the gas volumes, applying RF power to inductive coils of the showerhead to energize the precursor gas, flowing the energized precursor gas into a processing zone of a processing chamber, and applying DC bias power to a bias plate in a substrate support to control film deposition on the substrate. Brief explanation of the drawing

[0008] In a manner that the features of the above-mentioned disclosure can be understood in detail, a more detailed description of the disclosure briefly summarized above may be made by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments of the disclosure and should not be construed as limiting the scope of the disclosure, and that other equally valid embodiments may be permitted.

[0009] FIG. 1 illustrates a cross-sectional view of a processing chamber according to one embodiment of the present disclosure.

[0010] FIG. 2a is an enlarged view of a part of the lid assembly of FIG. 1.

[0011] FIG. 2b is a plan view of one embodiment of the coil.

[0012] FIG. 3 is a bottom view of a face plate of a shower head having a superimposed profile of a substrate in relation to the shower head, according to one embodiment of the present disclosure.

[0013] FIG. 4 illustrates a cross-sectional view of a processing chamber according to another embodiment of the present disclosure.

[0014] FIG. 5 is a flowchart illustrating the operations performed during the formation of the films deposited in FIG. 4.

[0015] For ease of understanding, the same reference numbers have been used where possible to designate the same elements common to the drawings. It is considered that the elements and features of one embodiment may be beneficially incorporated into other embodiments without further mention. Specific details for implementing the invention

[0016] Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large-area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators are disposed within the showerhead, wherein one of the plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Additionally, a DC bias power source is coupled to the substrate support assembly.

[0017] Large-area substrates as used herein are typically substrates having a surface area of ​​about 1 square meter or more. However, the substrate is not limited to any specific size or shape. In one aspect, the term “substrate” refers to any polygonal, square, rectangular, curved, or otherwise non-circular workpiece, such as glass or polymer substrates used in the fabrication of flat panel displays, for example.

[0018] In the present invention, the showerhead is configured to flow gas through and into the processing volume of the chamber in a plurality of independently controlled zones to improve the uniformity of processing on the surface of a large-area substrate exposed to gas in the processing zone. Additionally, each zone consists of a plenum, one or more perforated members between the plenum and the processing volume of the chamber, and a coil or part of a coil dedicated to the zone or an individual perforated plate. The plenum is formed between a dielectric window, a perforated member, and a peripheral frame structure. Each plenum is configured to enable the processing gas(s) to flow and be distributed through each plenum to cause a relatively uniform flow rate of the processing gases through the perforated member and into the processing volume, or in some cases, a customized flow rate. The plenum has a thickness of less than twice the thickness of the dark space of the plasma formed by the process gas(s) at the pressures of the process gas(s) within the plenum. Preferably, a coil-shaped inductive coupler is positioned behind the dielectric window and inductively couples energy through the dielectric window, plenum, and perforated member to strike and support the plasma in the processing volume. The flow of process gas(s) in each zone is controlled to cause uniform or customized gas flows to achieve desired process results on a large-area substrate.

[0019] Embodiments of the present disclosure include high-density plasma chemical vapor deposition (HDP-CVD) processing chambers operable to form one or more layers or films on substrates, including large-area substrates. A processing chamber as disclosed herein may be configured to deliver energized species of precursor gases generated in a plasma. Plasma may be generated by inductively coupling energy to a gas in a vacuum. Embodiments disclosed herein may be configured for use in chambers available from AKT America, Inc., a subsidiary of Applied Materials, Inc., Santa Clara, California. It should be understood that the embodiments discussed herein may also be carried out in chambers available from other manufacturers.

[0020] FIG. 1 is a cross-sectional view illustrating an exemplary processing chamber (100) according to one embodiment of the present disclosure. A substrate (102) is placed on a substrate receiving surface (120) of a pedestal or substrate support assembly (108) within a chamber body (104). The substrate support assembly (108) is coupled to a shaft (110) extending through the chamber body (104). The shaft (110) is coupled to an actuator (112), and the actuator (112) moves the substrate support assembly (108) in a vertical direction (Z direction) within the chamber body (104). For example, the substrate support assembly (108) of the processing chamber (100) illustrated in FIG. 1 is exemplified in a processing position. However, the substrate support assembly (108) may be lowered in the Z direction to a position adjacent to a transfer port (114). In this position, to transfer the substrate (102) out of the chamber body (104), an end effector or robot blade (not shown) is inserted between the substrate (102) and the substrate receiving surface (120) through the transfer port (114).

[0021] The processing chamber (100) also includes a cover assembly (106) positioned over a substrate support assembly (108). The cover assembly (106) may include a backing plate (122) placed on the chamber body (104). The cover assembly (106) includes a gas distribution assembly or a showerhead assembly (124), and such gas distribution assembly or showerhead assembly (124) is configured to deliver process gases from a gas source to a processing zone (126) between the showerhead assembly (124) and the substrate (102). The showerhead assembly (124) may also be coupled to a cleaning gas source that provides cleaning gases, such as fluorine-containing gases, to the processing zone (126).

[0022] The showerhead assembly (124) also functions as a plasma source (128). The showerhead assembly (124) includes one or more inductively coupled plasma generating members or coils (130). Each of the one or more coils (130) may be a single coil (130), two coils (130), or more than two coils (130) (these are performed jointly and are described below simply as coils (130)). Each of the one or more coils (130) is coupled to a power source (148) and ground (133). In one embodiment, the power source (148) is an inductively coupled RF (radio frequency) power source. The power source (148) is configured to provide a power signal at any suitable frequency and power level for plasma generation by the showerhead assembly (124). The first power source may include a matching circuit or tuning function for adjusting the electrical characteristics of the coils (130).

[0023] The showerhead assembly (124) further comprises a face plate (132) having a plurality of gas flow diffusers (134). Each gas flow diffuser of the gas flow diffusers (134) is supported by a plurality of support members (136) arranged in a grid-like configuration and includes a plurality of openings (220) (Fig. 2a), through which gas can flow. Each coil of the coils (130), or a portion of one or more coils (130), is placed on or above individual dielectric plates (138). An example of a coil (130) placed on dielectric plates (138) within the cover assembly (106) is more clearly illustrated in Fig. 2a. A plurality of gas volumes (140) are defined by the surfaces of the support members (136), the gas flow diffusers (134), and the dielectric plates (138). Each of one or more coils (130) is configured to receive an RF signal from a power source (148) and to generate an electromagnetic field that energizes process gases into plasma within gas volumes (140). The energized process gases within the gas volumes (140) flow into the processing zone (126) and toward the substrate (102) through gas flow diffusers (134).

[0024] Process gases from a gas source are supplied to each of the gas volumes (140) through conduits (200, 205) within the support members (136). The volume or flow rate of gas(s) entering and leaving the showerhead assembly (124) is controlled in different zones of the showerhead assembly (124). The gas flow to each of the gas volumes (140) can be controlled by a plurality of flow controllers, such as flow controllers (142, 143, and 144) as illustrated in FIG. 1. For example, the flow rate of gases to the outer or peripheral zones of the showerhead assembly (124) can be controlled by flow controllers (142, 143), while the flow rate of gases to the inner or central zone of the showerhead assembly can be controlled by flow controller (144). When chamber cleaning is performed, cleaning gases from a cleaning gas source can flow into each of the gas volumes (140) and into the processing volume (140), and within the processing volume (140), the cleaning gases are energized into ions, radicals, or both. The energized cleaning gases can flow into the processing zone (126) through gas flow diffusers (134) to clean the chamber components.

[0025] FIG. 2a is an enlarged view of a portion of the cover assembly (106) of FIG. 1. As discussed above, precursor gases from a gas source flow into gas volumes (140) through first conduits (200) formed in the backing plate (122). Each of the first conduits (200) is coupled to second conduits (205) formed through the showerhead frame (136). The second conduits (205) provide precursor gases to the gas volumes (140) at the opening (210). In some embodiments, some of the second conduits (205) may provide gases to two adjacent gas volumes (140) (one of the second conduits (205) is shown in phantom in FIG. 2a). In some embodiments, the second conduits (205) may include flow restrictors (215) for controlling flow into gas volumes (140). The size of the flow restrictors (215) may be varied to control the gas flow through the flow restrictors (215). For example, each of the flow restrictors (215) includes an orifice of a specific size (e.g., diameter) utilized to control the flow. Additionally, each of the flow restrictors (215) may be modified as needed to provide a larger or smaller orifice size as needed to control the flow through each of the flow restrictors (215).

[0026] As illustrated in FIG. 2a, gas flow diffusers (134) are positioned at the bottom of gas volumes (140) and include a plurality of openings (220) extending through these gas flow diffusers (134). Each of the plurality of openings (220) allows gases energized by the coils (130) to flow as plasma from the gas volumes (140) into the processing zone (126) at desired flow rates, due to the diameter of the openings (220) extending between the gas volume (140) and the processing zone (126). The openings (220), and / or rows and columns of the openings (220), may be differently sized and / or differently spaced apart to equalize the gas flow through each of the openings (220) in one or more of the gas flow diffusers (134). Alternatively, the gas flow from each of the openings (220) may be non-uniform according to desired gas flow characteristics.

[0027] Support members (136) are coupled to the backing plate (122) by fasteners (240), such as bolts or screws. Each of the support members (136) physically supports and separates individual gas flow diffusers (134) at an interface portion (245). Each of the interface portions (245) may be a leg or shelf that supports the edge or perimeter of the gas flow diffusers (134). In some embodiments, the interface portions (245) include removable strips (250). The removable strips (250) are secured to the support members (136) by fasteners (not shown), such as bolts or screws. While a portion of the interface portions (245) is L-shaped, another portion of the interface portions (245) is T-shaped. One or more seals (265) are utilized to seal the gas volumes (140). For example, the seals (265) are elastomeric materials such as O-ring seals or polytetrafluoroethylene (PTFE) joint sealant materials. One or more seals (265) may be provided between the support members (136) and the gas flow diffusers (134). Removable strips (250) are utilized to support the gas flow diffusers (134) on the support members (136). The removable strips (250) may be removed as needed to replace each gas flow diffuser (134) individually.

[0028] In addition, each of the support members (136) supports dielectric plates (138) by utilizing shelves (270) extending from these support members (136) (as shown in FIG. 2a). In embodiments of the showerhead assembly (124) / plasma source (128), the dielectric plates (138) have a smaller lateral surface area (XY plane) compared to the surface area of ​​the entire showerhead assembly (124) / plasma source (128). To support the dielectric plates (138), shelves (270) are utilized. The reduced lateral surface area of ​​the plurality of dielectric plates (138) enables the use of dielectric materials as a physical barrier between the vacuum environment and plasma within the gas volume (140) and processing zone (126) and the atmospheric environment where the adjacent coil (130) is typically positioned, without applying large stresses to these dielectric materials based on the large surface area supporting the atmospheric pressure load.

[0029] Seals (265) are used to seal volumes (275) (at atmospheric pressure or near atmospheric pressure) from gas volumes (140) (at sub-atmospheric pressures in the range of millitors or less during processing). Interface members (280) are shown extending from support members (136), and fasteners (285) are utilized to secure, i.e., to push, dielectric plates (138) against the seals (265) and shelves (270). Seals (265) can also be utilized to seal the space between the outer perimeter of the gas flow diffusers (134) and the support members (136).

[0030] Materials for the showerhead (124) / plasma source (128) are selected based on one or more of electrical properties, strength, and chemical stability. The coils (130) are made of an electrically conductive material. The backing plate (122) and support members (136) are made of a material capable of supporting the weight and atmospheric pressure load of the supported components, and this material may include metal or other similar materials. The backing plate (122) and support members (136) may be made of a non-magnetic material (e.g., a non-paramagnetic or non-ferromagnetic material) such as aluminum. The removable strips (250) are also formed of a non-magnetic material, such as a metallic material, such as aluminum, or a ceramic material (e.g., alumina (Al2O3) or sapphire (Al2O3)). The gas flow diffusers (134) are made of ceramic material, such as quartz, alumina, or other similar material. The dielectric plates (138) are made of quartz, alumina, or sapphire material.

[0031] In some embodiments, the showerhead frame (136) includes one or more coolant channels (255) inside. One or more coolant channels (255) are fluidically coupled to a fluid source (260) configured to provide a coolant medium to the coolant channels (255).

[0032] FIG. 2b is a plan view of one embodiment of a coil (130) positioned on dielectric plates (138) found in a cover assembly (106). In one embodiment, the coil (130) configuration illustrated in FIG. 2b may be used such that the illustrated coil configuration is formed individually on each of the dielectric plates (138), so that each planar coil is connected in series with coils (130) positioned adjacently across the showerhead assembly (124) in a desired pattern. The coil (130) includes a conductor pattern (290) in a rectangular spiral shape. However, conductor patterns of other morphologies are also considered. Electrical connections include an electrical input terminal (295A) and an electrical output terminal (295B). Each of one or more coils (130) of the showerhead assembly (124) is connected in series and / or in parallel.

[0033] FIG. 3 is a bottom view of one embodiment of the face plate (132) of the showerhead assembly (124). FIG. 3 includes an overlapping profile of the position of the substrate (102) on the substrate receiving surface (120) in relation to the showerhead assembly (124) during processing in the processing chamber (100) according to one embodiment of the present disclosure. As described above, the showerhead assembly (124) is configured to include one or more gas flow diffusers (134) that are supported and separated by a plurality of support members (136) arranged in a grid-shaped frame. Gas flows from gas volumes (140) into the processing zone (126) on the substrate (102) through a plurality of openings (220) passing through each gas flow diffuser (134). The number of coils (130), gas volumes (140), and gas flow diffusers (134) within the showerhead assembly (124) depends on the total area for film deposition on the substrate (102).

[0034] FIG. 4 is a cross-sectional view illustrating a processing chamber (400) according to an embodiment of the present disclosure. In addition to the features of the processing chamber (100) as described above, the processing chamber (400) includes an electrostatic chuck assembly (158), a substrate bias plate (160), and a substrate support assembly (108) having an insulating layer (162).

[0035] In one embodiment, the electrostatic chuck assembly (158) is positioned at the top position of the substrate support assembly (108) such that the substrate receiving surface (120) corresponds to the upper surface of the electrostatic chuck assembly (158). The electrostatic chuck assembly (158) is coupled to an electrostatic chucking power source (152) positioned outside the chamber body (104). The electrostatic chucking power source may be any suitable power supply configured to provide desired voltages for electrostatic chucking of the substrate (102) during processing. Additionally, the electrostatic chuck assembly (158) may include two or more electrodes arranged in any suitable arrangement selected to chuck a specific substrate device. For example, the electrostatic chuck assembly (158) may include two electrodes arranged in a rectangular spiral, with one electrode surrounding the other. In another example, the electrostatic chuck assembly (158) may include two interleaved electrodes forming a circular shape. Each electrode within the electrostatic chuck assembly (158) can be powered separately by the electrostatic chucking power source (158), so that the electrodes can be charged with different polarities.

[0036] An insulating layer (162) is positioned at the lowest position of the substrate support assembly (108). The insulating layer (162) may be formed from a dielectric material such as silicon dioxide (SiO2). The insulating layer (162) shields the line-of-sight path of the electric field formed by the substrate bias plate (160) against the chamber body (104), thereby minimizing the possibility of an electric arc between the substrate bias plate (160) and the chamber body (104).

[0037] A substrate bias plate (160) is positioned between the electrostatic chuck assembly (158) and the insulating layer (162). The substrate bias plate is additionally coupled to a substrate bias power source (156) and a low-pass filter (154) arranged in a linear connection. As illustrated in FIG. 4, the substrate bias power source (156) and the low-pass filter (154) may be positioned outside the chamber body (104). The substrate bias plate (162) and the substrate bias power source (156) are configured to provide an electric bias under the substrate (102) to extract ions from the plasma within the processing zone (126) toward desired areas of the substrate (102) on the substrate support assembly (108). When used during processing, the extraction of plasma ions toward desired areas of the substrate (102) controls the film deposition so that film characteristics (e.g., film thickness and film stress) can be controlled. For example, the amount (e.g., density) of ions extracted from the plasma can be controlled by adjusting the substrate bias power supplied to specific areas of the substrate surface, thereby enabling control of the tensile and compressive stress characteristics of the films deposited on the substrate (102).

[0038] The substrate bias power source (156) is a DC type power source that supplies a DC (direct current) voltage with positive or negative polarity. In one embodiment, the substrate bias power source (156) is configured to supply a constant DC bias. In another embodiment, the substrate bias power source (156) is configured to supply a pulsed DC bias. A low-pass filter (154) may be configured to prevent RF signals from the power source (148) from coupling with the substrate support assembly (108) and passing through the substrate bias power source (156).

[0039] FIG. 5 is a flowchart illustrating a method (500) for controlling film stress inherent during large-area film deposition using the processing chamber (400) of FIG. 4. In operation (510), a substrate (102) is transferred onto the substrate receiving surface (120) of a substrate support assembly (108). The substrate (102) can be transferred onto the substrate support assembly (108) into the processing chamber (100) by any suitable means, such as a robot blade, through a transfer port (114) located on the side wall of the chamber body (104). Then, the substrate support assembly (108) can be adjusted to a processing position by an actuator (112) as shown in FIG. 1.

[0040] In operation (520), precursor gases from a gas source are supplied to gas volumes (140) through conduits (200, 205) disposed in support members (136). The flow of precursor gases can be controlled by several flow controllers (142, 143) that control the amount and speed of gas supplied to each gas volume (140).

[0041] In operation (530), a power source (148) supplies RF power to inductive coupling coils (130) within a cover assembly (106). RF power can be supplied at any suitable frequency or power level for plasma generation. For example, an RF source power of 56 kW and a signal frequency of 13.56 MHz may be applied. In another example, a power of 56 kW and a 2 MHz frequency RF signal may be applied. Each coil of the coils (130) receives the RF power supplied by the power source (148) and generates an electromagnetic field that energizes the precursor gases within the gas volumes (140). Then, the energized process gases flow toward the substrate (102) into the processing zone (126) through a plurality of openings (220) arranged via gas flow diffusers (134).

[0042] In operation (540), when the energized process gases flow into the processing zone (126), a DC bias is applied to the substrate bias plate (160). The DC bias power is supplied by the substrate bias power source (156) and filtered by the low-pass filter (154). The DC bias output may be pulsed to a positive or negative potential or may be constant. A DC bias of any suitable pulse rate or power level may be supplied to the substrate bias plate (160). For example, a pulsed DC bias having a pulse rate of about 50 kHz to about 500 kHz, such as about 100 kHz to about 400 kHz, may be supplied. For example, a pulsed DC bias having a pulse rate of about 250 kHz to about 300 kHz may be supplied. A pulsed or constant DC bias is provided at a power level in the range of about 50 W to about 1000 W, for example, about 250 W to about 750 W. For example, the DC bias power is provided at a power level of about 400 W to about 600 W.

[0043] In operation (540), the application of DC power across the substrate bias plate (160) biases the plasma toward the substrate (102) by generating a local capacitively coupled electric field, thereby increasing ion bombardment on the substrate surface and enabling the formation of a film layer with controlled inherent film stress. The use of DC substrate biasing in operation (540) enables the modification of inherent film stress characteristics during large-area HDP-CVD utilizing multi-coil ICP systems. In particular, DC biasing enables the formation of large-area substrate film layers with reduced and uniform film stress levels across the entire film being deposited.

[0044] Other methods of film stress control either do not involve substrate biasing or involve the application of RF substrate bias power to control ion bombardment on the substrate surface. However, when implemented with HDP chambers equipped with multi-coil ICP systems, these methods result in undesirable film stress characteristics of the deposited film layers. For example, when no substrate bias is applied, the deposited film layers tend to exhibit undesirable high tensile film stress levels.

[0045] Alternatively, when RF substrate bias is applied, the deposited film layers tend to exhibit non-uniform film stress levels. In particular, while the film stress in substrate regions located directly beneath the coils of a multi-coil ICP system tends to be controlled by the RF bias power, the substrate regions located beneath the showerhead structural frame remain largely unaffected. This non-uniformity is a result of the RF bias power penetrating the plasma and coupling to the grounded showerhead structural frame located above. Therefore, film stress is position-dependent when RF substrate bias is applied.

[0046] Relatively speaking, when a DC substrate bias is applied, the control of film stress is not position-dependent. Rather, because the DC bias power is not coupled to the grounded showerhead structural frame above, the resulting film layer exhibits uniform film stress characteristics. Therefore, the plasma sheath is affected by the DC bias power, and the regions located not only below the showerhead structural frame but also below the coils of the multi-coil ICP system are controlled substantially equally.

[0047] Embodiments of the present disclosure include a method and apparatus capable of forming one or more layers of a film on a large-area substrate. Gas (or precursor) flow as well as plasma uniformity are controlled by a combination of configurations of individual gas flow diffusers (134), coils (130), and / or flow controllers (142, 143, and 144). Film stress uniformity is controlled by the application of a DC substrate bias to a bias substrate platform (160) within a substrate support assembly (108).

[0048] In one example, a plasma deposition chamber is provided. The plasma deposition chamber comprises a showerhead having a plurality of perforated members, an inductive coupler corresponding to one or more of the plurality of perforated members, a plurality of support members for supporting each of the perforated members, and a substrate support assembly. One or more of the support members provide precursor gases in the volume between the inductive couplers and the perforated members. The substrate support assembly comprises an electrostatic chuck assembly, an insulating layer, and a substrate bias plate. The substrate bias plate is coupled to a DC type power source and a low-pass filter.

[0049] In this example, the low-pass filter optionally prevents the RF power supplied to the inductive coils from being coupled with a DC type power source.

[0050] In this example, the DC type power source is optionally configured to provide a constant DC bias to the bias plate with positive or negative polarity.

[0051] In this example, the DC type power source is optionally configured to provide a pulsed DC bias to the bias plate with positive or negative polarity.

[0052] In this example, each of the plurality of support members and the plurality of perforated members optionally includes an interface portion, and each interface portion includes one or more removable strips.

[0053] Although the foregoing describes embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

Claim 1 A method comprising the steps of: placing a substrate on a substrate support ― said substrate support is placed in a processing area of ​​a chamber body ―; providing precursor gases from a gas source to a plurality of gas volumes of a showerhead ― each gas volume is defined by a perforated member, a dielectric plate placed on each perforated member, and adjacent support members, and the step of providing precursor gases to the plurality of gas volumes includes the step of flowing the precursor gases through conduits placed on each of the adjacent support members ―; supplying RF power to each coil placed on each dielectric plate to form energized precursor gases in the plurality of gas volumes; flowing the energized precursor gases through each perforated member into a processing area of ​​the chamber body; and applying a DC bias to a substrate bias plate placed on the substrate support to bias the energized precursor gases toward the substrate. Claim 2 A method according to claim 1, wherein the DC bias is a constant DC bias provided to the substrate bias plate. Claim 3 In claim 2, the method wherein the DC bias is provided at a power level of 50 W to 1000 W. Claim 4 A method according to claim 1, wherein the DC bias is a pulsed DC bias provided to the substrate bias plate, and the pulsed DC bias is pulsed at a frequency of 50 kHz to 500 kHz. Claim 5 A method according to claim 1, wherein each dielectric plate, the showerhead, and adjacent support members define a coil volume, and each inductive coupler of a plurality of inductive couplers is supported by each dielectric plate in the coil volume. Claim 6 A method according to claim 1, further comprising the step of flowing a coolant through cooling channels disposed in adjacent support members. Claim 7 A method according to claim 1, wherein the flow of precursor gases is controlled by one or more flow controllers. Claim 8 In claim 7, the method wherein the flow controllers are configured to control the amount and velocity of precursor gases into each of the plurality of gas volumes. Claim 9 In claim 1, the method wherein the RF power is 56 kW and the signal frequency is 13.56 MHz. Claim 10 In claim 1, the method wherein the RF power is 56 kW and the signal frequency is 2 MHz. Claim 11 A method comprising the steps of: placing a substrate on a substrate support ― said substrate support is placed in a processing area of ​​a chamber body ―; providing precursor gases from a gas source to a plurality of gas volumes of a showerhead ― each gas volume is defined by a perforated member, a dielectric plate placed on each perforated member, and adjacent support members ―; supplying RF power to each coil placed on each dielectric plate to form energized precursor gases in the plurality of gas volumes; flowing the energized precursor gases through each perforated member into a processing area of ​​the chamber body; and applying a DC bias to a substrate bias plate placed on the substrate support to bias the energized precursor gases toward the substrate. Claim 12 delete Claim 13 In claim 11, the method wherein the DC bias is a constant DC bias provided to the substrate bias plate. Claim 14 In claim 13, the method wherein the DC bias is provided at a power level of 50 W to 1000 W. Claim 15 In claim 11, the DC bias is a pulsed DC bias provided to the substrate bias plate, and the pulsed DC bias is pulsed at a frequency of 50 kHz to 500 kHz. Claim 16 In claim 11, each dielectric plate, the showerhead, and adjacent support members define a coil volume, and each inductive coupler of a plurality of inductive couplers is supported by each dielectric plate in the coil volume, a method. Claim 17 A method according to claim 11, further comprising the step of flowing a coolant through cooling channels disposed in adjacent support members. Claim 18 In claim 11, the flow of precursor gases is controlled by one or more flow controllers. Claim 19 In claim 18, the method wherein the flow controllers are configured to control the amount and velocity of precursor gases into each of the plurality of gas volumes. Claim 20 In claim 11, the method wherein the RF power is 56 kW and the signal frequency is 13.56 MHz.

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