Substrate processing method

Abstract

The present invention provides a method for processing a substrate. The substrate processing method comprises: a process preparation step for setting a pattern of a laser to be irradiated onto a substrate; and a process processing step for processing the substrate by irradiating the laser onto the substrate after the process preparation step. The process preparation step comprises: a distortion amount acquisition step for obtaining a distortion amount of an irradiation pattern generated from a laser source and modulated by an optical modulation unit by irradiating the irradiation pattern into a preset irradiation area; and a distortion correction step for generating a correction pattern based on the distortion amount obtained in the distortion amount acquisition step and inputting the correction pattern into an optical modulation unit. The process processing step may include a heating step for heating the substrate by irradiating the correction pattern onto the substrate.

Description

Technology Field

[0001] The present invention relates to a substrate processing method, and more specifically, to a method of processing a substrate by irradiating it with a laser. Background Technology

[0002] To manufacture semiconductor devices, various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition are performed on a substrate such as a wafer. Various processing liquids and processing gases are used in each process. In addition, a drying process is performed on the substrate to remove the processing liquid used to process the substrate.

[0003] Recently, as the linewidth of semiconductor circuits has become finer, the quality of the pattern on the mask with the pattern etched on it is becoming important, as expensive EUV lithography equipment is used to improve the lithography quality of fine patterns. To etch the mask pattern, a method is also used in which a laser (L) is modulated and an irradiation pattern is formed and irradiated using an optical modulation element such as a digital micro-mirror device (hereinafter referred to as “DMD”), and then irradiated onto a substrate such as a wafer.

[0004] Meanwhile, light can be irradiated onto the upper surface of a substrate on which a liquid film is formed by a chemical solution to heat a specific area of ​​the substrate. While the entire pattern on the substrate is etched by the chemical solution, the specific area irradiated by light is heated so that further etching can occur. The degree of etching depends on the amount of heat delivered by the light per unit time, and since the DMD can form irradiation patterns of various shapes, the etching of the substrate (M) can be controlled in various ways.

[0005] When heating a substrate (M) by irradiating it with a light source such as a laser, distortion may occur in the shape / distribution of the laser depending on the characteristics of the optical components, such as the characteristics of a scanner or a lens. Such distortion may produce results different from the intended outcome when the light source is irradiated onto the substrate (M) and may have a negative impact on the process and substrate quality. The problem to be solved

[0006] One objective of the present invention is to provide a substrate processing method capable of effectively processing a substrate.

[0007] In addition, the present invention has one objective of providing a substrate processing method capable of effectively adjusting the line width of a pattern formed on a substrate.

[0008] In addition, the present invention has one objective of providing a substrate processing method capable of correcting distortion of light irradiated onto a substrate.

[0009] The objectives of the present invention are not limited thereto, and other unmentioned objectives will be clearly understood by a person skilled in the art from the description below. means of solving the problem

[0010] The present invention provides a method for processing a substrate. The substrate processing method comprises: a process preparation step for setting a pattern of a laser to be irradiated onto a substrate; and a process processing step for processing the substrate by irradiating the laser onto the substrate after the process preparation step. The process preparation step comprises: a distortion amount acquisition step for obtaining a distortion amount of an irradiation pattern generated from a laser source and modulated by an optical modulation unit by irradiating the irradiation pattern into a preset irradiation area; and a distortion correction step for generating a correction pattern based on the distortion amount obtained in the distortion amount acquisition step and inputting the correction pattern into an optical modulation unit. The process processing step may include a heating step for heating the substrate by irradiating the correction pattern onto the substrate.

[0011] In one embodiment, in the distortion amount acquisition step, after irradiating the irradiation pattern onto a target irradiation area, data of the actual irradiation pattern irradiated by the laser can be acquired.

[0012] In one embodiment, data acquisition of the actual irradiation pattern may be achieved by measuring the beam profile and / or output of the irradiated laser.

[0013] In one embodiment, in the step of acquiring the distortion amount, the coordinates of the target investigation position of the investigation pattern and the investigation position of the acquired actual investigation pattern are compared, and the distortion amount can be acquired by vectorizing the compared coordinate values.

[0014] In one embodiment, in the distortion correction step, the correction pattern can be generated by inversely calculating the vectorized distortion amount to correct the actual irradiation pattern so that it is irradiated at the target irradiation position.

[0015] In one embodiment, in the distortion correction step, a reference point where no distortion occurs can be set by comparing the investigation pattern with the actual investigation pattern, and the correction pattern can be generated by point-symmetrically applying the investigation pattern around the reference point.

[0016] In one embodiment, the process preparation step further includes a correction verification step after the distortion amount correction step, in which the correction pattern is examined in the examination area to verify the suitability of the correction pattern, and if the correction pattern verified in the correction verification step is suitable, the process processing step may be performed.

[0017] In one embodiment, the heating step may include a laser modulation step of modulating the laser using the optical modulation unit; and a laser irradiation step of irradiating the correction pattern of the modulated laser onto the substrate.

[0018] In one embodiment, the process treatment step may further include a treatment solution supply step of supplying a treatment solution to the substrate prior to the heating step.

[0019] In one embodiment, the substrate is divided into a plurality of irradiation areas, and in the distortion amount acquisition step, a data map of the distortion amount is acquired for each of the plurality of irradiation areas, and in the distortion correction step, a correction pattern corresponding to each of the plurality of irradiation areas can be generated.

[0020] In one embodiment, the optical modulation unit is a digital micromirror device (DMD) unit, and the DMD unit comprises rotatably provided micromirrors; and a board substrate on which the micromirrors are installed, and the modulation of the laser can be achieved by switching between an On state in which the laser is reflected so as to be irradiated onto the substrate and an Off state in which the laser is dumped by adjusting the direction in which each of the micromirrors reflects the laser.

[0021] The present invention also provides a method for processing a substrate. The substrate processing method comprises: a process preparation step for setting an irradiation pattern of a laser irradiated onto a substrate; and a process processing step for processing the substrate by irradiating the laser onto the substrate after the process preparation step. The process preparation step comprises: a distortion amount acquisition step for obtaining a distortion amount of an irradiation pattern generated from a laser source and modulated by an optical modulation unit by irradiating the irradiation pattern onto a preset irradiation area; a distortion correction step for generating a correction pattern based on the distortion amount obtained in the distortion amount acquisition step and inputting the correction pattern into an optical modulation unit; and a correction verification step for verifying the suitability of the correction pattern by irradiating the correction pattern onto the irradiation area. The process processing step comprises: a processing liquid supply step for supplying a processing liquid to the substrate; and a heating step for heating the substrate by irradiating the correction pattern onto the substrate on which a liquid film of the processing liquid is formed. The optical modulation unit may be a digital micromirror device (DMD) unit.

[0022] In one embodiment, the heating step may include a laser modulation step of modulating the laser using the optical modulation unit; and a laser irradiation step of irradiating the correction pattern of the modulated laser onto the substrate.

[0023] In one embodiment, in the distortion amount acquisition step, after irradiating the irradiation pattern onto a target irradiation area, data of the actual irradiation pattern irradiated by the laser can be acquired.

[0024] In one embodiment, in the step of acquiring the distortion amount, the coordinates of the target investigation position of the investigation pattern and the investigation position of the acquired actual investigation pattern are compared, and the distortion amount can be acquired by vectorizing the compared coordinate values.

[0025] In one embodiment, in the distortion correction step, the correction pattern can be generated by inversely calculating the vectorized distortion amount to correct the actual irradiation pattern so that it is irradiated at the target irradiation position.

[0026] In one embodiment, in the distortion correction step, a reference point where no distortion occurs can be set by comparing the investigation pattern with the actual investigation pattern, and the correction pattern can be generated by point-symmetrically applying the investigation pattern around the reference point.

[0027] The present invention also provides a method for processing a substrate. The substrate processing method comprises: a process preparation step for setting a pattern of a laser irradiated onto a substrate; and a process processing step for processing the substrate by irradiating the laser onto the substrate after the process preparation step. The process preparation step comprises: a distortion amount acquisition step for obtaining a distortion amount of the irradiation pattern for each of a plurality of irradiation areas by irradiating an irradiation pattern generated from a laser source and modulated by an optical modulation unit; a distortion correction step for generating a correction pattern corresponding to each of the plurality of irradiation areas based on the distortion amount obtained in the distortion amount acquisition step and inputting the correction pattern to an optical modulation unit; and a correction verification step for verifying the suitability of the correction pattern by irradiating the correction pattern onto each of the plurality of irradiation areas. The process processing step comprises: a processing liquid supply step for supplying a processing liquid to the substrate; and a heating step for heating the substrate on which a liquid film of the processing liquid is formed. The heating step comprises: a laser modulation step for modulating the laser using the optical modulation unit. and a laser irradiation step of irradiating the substrate with the correction pattern formed through the modulation of the laser; wherein the optical modulation unit may be a digital micromirror device (DMD) unit.

[0028] In one embodiment, in the distortion amount acquisition step, the irradiation pattern is irradiated to each of the plurality of irradiation areas, data of the actual irradiation pattern irradiated by the laser is acquired, the coordinates of the target irradiation position of the irradiation pattern and the acquired irradiation position of the actual irradiation pattern are compared, and the comparison coordinate values ​​are vectorized to acquire the distortion amount, and in the distortion correction step, the vectorized distortion amount is inversely calculated to correct the actual irradiation pattern so that it is irradiated to the target irradiation position, thereby generating the correction pattern.

[0029] In one embodiment, in the distortion correction step, a reference point where no distortion occurs can be set by comparing the investigation pattern with the actual investigation pattern, and the correction pattern can be generated by point-symmetrically applying the investigation pattern around the reference point. Effects of the invention

[0030] According to one embodiment of the present invention, a substrate can be effectively processed.

[0031] In addition, according to one embodiment of the present invention, the line width of a pattern formed on a substrate can be effectively adjusted.

[0032] In addition, according to one embodiment of the present invention, distortion of light irradiated onto a substrate can be corrected.

[0033] The effects of the present invention are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the attached drawings. Brief explanation of the drawing

[0034] The various features and benefits of the non-limiting embodiments of this specification may become more apparent from a review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the claims. Unless expressly stated otherwise, the accompanying drawings are not to be drawn to scale. For clarity, various dimensions in the drawings may be exaggerated. FIG. 1 is a plan view schematically showing a substrate processing apparatus according to one embodiment of the present invention. Figure 2 is a schematic diagram showing the appearance of a substrate being processed in the liquid processing chamber of Figure 1. Figure 3 is a schematic diagram showing one embodiment of the liquid treatment chamber of Figure 1. Figure 4 is a graph showing the distribution of light output from a laser source. Figure 5 is a graph showing the distribution of light passing through a flat-top optical mechanism. Figure 6 is a schematic diagram showing the appearance of an optical modulation element. Figure 7 is a diagram showing the laser output from the optical modulation element. Figure 8 is a diagram showing the laser output from the optical modulation element being removed by the optical damper. Figure 9 is a diagram illustrating the principle of laser removal in an optical damper. Figure 10 is a diagram illustrating the irradiation pattern of a laser output from an optical modulation unit. Figure 11 is a diagram showing the irradiation position changing mechanism changing the irradiation position of the laser. Figure 12 is a diagram showing the direction of travel of a laser moving in an oblique direction in a position change mechanism being converted to a vertical direction. FIGS. 13 to 15 are diagrams briefly illustrating that distortion occurs in a pattern irradiated onto a substrate depending on optical properties. Figure 16 is a diagram illustrating the distortion of the actual irradiation pattern formed in the center and edge regions of the substrate. FIG. 17 is a flowchart illustrating a substrate processing method according to one embodiment of the present invention. Figure 18 is a diagram showing the actual irradiation position of the laser irradiated to the target irradiation position of each irradiation area in the distortion amount acquisition step of Figure 17. FIG. 19 is a diagram briefly illustrating a method for obtaining the amount of distortion of a laser irradiation pattern in the distortion amount acquisition step of FIG. 17. Figure 20 is a diagram showing the actual irradiation position of the laser after distortion correction is performed in the distortion correction step of Figure 17. FIG. 21 illustrates multiple target survey locations and corresponding actual survey locations for a single survey area. Figure 22 is a diagram showing the investigation pattern and the actual investigation pattern in the distortion amount acquisition step of Figure 17. FIG. 23 is a diagram showing the correction pattern obtained in the distortion correction step of FIG. 18. Figure 24 is a diagram showing the state of examining the correction pattern during the correction verification step of Figure 17. FIG. 25 is a cross-sectional view showing a substrate processing device performing a processing liquid supply step according to one embodiment. FIGS. 26 to 27 are cross-sectional views showing a substrate processing apparatus performing a heating step according to one embodiment. FIG. 28 is a cross-sectional view showing a substrate processing apparatus performing a rinse liquid supply step according to one embodiment. Specific details for implementing the invention

[0035] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments are provided to ensure that the present disclosure is thorough and will fully convey its scope to those skilled in the art. To provide a complete understanding of the embodiments of the present disclosure, many specific details, such as examples of specific components, devices, and methods, are presented. It will be apparent to those skilled in the art that specific details are not necessary, that exemplary embodiments may be implemented in many different forms, and that neither should be interpreted as limiting the scope of the present disclosure. In some exemplary embodiments, known processes, known device structures, and known technologies are not described in detail.

[0036] The terms used herein are merely for describing specific exemplary embodiments and are not intended to limit exemplary embodiments. Singular expressions or expressions where singularity is not specified, as used herein, are intended to include plural expressions unless the context clearly indicates otherwise. The terms “comprising,” “comprising,” “having,” and “having” are open-ended and thus specify the presence of the mentioned features, components, steps, operations, elements, and / or components, and do not exclude the presence or addition of one or more other features, components, steps, operations, elements, components, and / or groups thereof. Method steps, processes, and operations in this specification are not to be interpreted as necessarily being performed in the specific order discussed or described unless the order of performance is specified. Additionally, additional or alternative steps may be selected.

[0037] When an element or layer is referred to as being "on," "connected," "combined," "attached," "adjacent," or "covering" another element or layer, it may be directly on, connected to, combined with, attached to, adjacent to, or covering said other element or layer, or intermediate elements or layers may exist. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly combined" with another element or layer, it should be understood that intermediate elements or layers do not exist. Throughout the specification, the same reference numerals refer to the same elements. The term "and / or" as used in the present invention includes all combinations and non-combinations of one or more of the listed items.

[0038] Although terms such as first, second, third, etc., may be used to describe various elements, regions, layers, and / or sections in the present invention, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Accordingly, the first element, first region, first layer, or first section discussed below may be referred to as the second element, second region, second layer, or second section without departing from the teachings of the exemplary embodiments.

[0039] Spatially relative terms (e.g., "below," "under," "lower," "above," "top," etc.) may be used for convenience of explanation to describe the relationship between one element or feature and another element(s) or feature(s) as illustrated in the drawings. It should be understood that spatially relative terms are intended to include not only the orientations illustrated in the drawings but also other orientations of the device in use or operation. For example, if the device in the drawings is inverted, elements described as "below" or "under" other elements or features will be oriented "above" other elements or features. Thus, the term "below" may include both upper and lower orientations. The device may be oriented differently (rotated 90 degrees or in a different orientation), and the spatially relative descriptive terms used in the present invention may be interpreted accordingly.

[0040] It should be understood that there may be some inaccuracy when the terms "identical" or "same" are used in the description of the embodiments. Therefore, if one element or value is referred to as identical to another element or value, it should be understood that said element or value is identical to another element or value within a manufacturing or operating tolerance (e.g., ±10%).

[0041] Where the words “approximately” or “substantially” are used in this specification with respect to figures, it should be understood that such figures include a manufacturing or operational tolerance (e.g., ±10%) of the figures mentioned. Additionally, where the words “generally” and “substantially” are used with respect to geometric forms, it should be understood that while geometric accuracy is not required, freedom of form (latitude) is within the scope of disclosure.

[0042] Unless otherwise defined, all terms used in the present invention (including technical and scientific terms) have the same meaning as generally understood by those skilled in the art to which the exemplary embodiments belong. Furthermore, terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with that meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the present invention.

[0043] Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 28.

[0044] FIG. 1 is a plan view schematically showing a substrate processing apparatus according to one embodiment of the present invention.

[0045] Referring to FIG. 1, the substrate processing device includes an index module (10), a processing module (20), and a controller (30). When viewed from above, the index module (10) and the processing module (20) are arranged along one direction. Hereinafter, the direction in which the index module (10) and the processing module (20) are arranged is referred to as the first direction (X), the direction perpendicular to the first direction (X) when viewed from above is referred to as the second direction (Y), and the direction perpendicular to both the first direction (X) and the second direction (Y) is referred to as the third direction (Z).

[0046] The index module (10) returns the substrate (M) from the container (CR) containing the substrate (M) to the processing module (20), and receives the substrate (M) that has been processed in the processing module (20) back into the container (CR). The longitudinal direction of the index module (10) is provided in the second direction (Y). The index module (10) has a load port (12) and an index frame (14). The load port (12) is located on the opposite side of the processing module (20) relative to the index frame (14). The container (CR) containing the substrates (M) is placed in the load port (12). Multiple load ports (12) may be provided, and multiple load ports (12) may be arranged along the second direction (Y).

[0047] A sealed container, such as a Front Open Unified Pod (FOUP), may be used as the container (CR). The container (CR) may be placed at the load port (12) by a transport means (not shown), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator.

[0048] An index robot (120) is provided in the index frame (14). A guide rail (124) is provided within the index frame (14) with a longitudinal direction in the second direction (Y), and the index robot (120) can be provided to be movable on the guide rail (124). The index robot (120) includes a hand (122) on which a substrate (M) is placed, and the hand (122) can be provided to move forward and backward, rotate about the third direction (Z) as an axis, and move along the third direction (Z). A plurality of hands (122) are provided spaced apart in the vertical direction, and the hands (122) can move forward and backward independently of each other.

[0049] The controller (30) can control the components of the substrate processing device. The controller (30) may be equipped with a process controller consisting of a microprocessor (computer) that executes control of the operation of the substrate processing device, a user interface consisting of a keyboard for an operator to perform command input operations to manage the substrate processing device, a display for visualizing and displaying the operating status of the substrate processing device, a control program for executing processing in the substrate processing device under the control of the process controller, and a memory unit storing a program for executing processing in each component according to various data and processing conditions, i.e., a processing recipe. Additionally, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium within the memory unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0050] The controller (30) can control the substrate processing device to perform the substrate processing method described below. For example, the controller (30) can control the components provided in the liquid processing chamber (400) to perform the substrate processing method described below.

[0051] The processing module (20) includes a buffer unit (200), a return chamber (300), and a liquid processing chamber (400). The buffer unit (200) provides a space where a substrate (M) introduced into the processing module (20) and a substrate (M) removed from the processing module (20) temporarily stay. The liquid processing chamber (400) performs a liquid processing process by supplying liquid onto the substrate (M) to liquid-process the substrate (M). The return chamber (300) returns the substrate (M) between the buffer unit (200) and the liquid processing chamber (400).

[0052] The return chamber (300) may be provided with its length direction in the first direction (X). The buffer unit (200) may be positioned between the index module (10) and the return chamber (300). The liquid processing chamber (400) may be positioned on the side of the return chamber (300). The liquid processing chamber (400) and the return chamber (300) may be positioned along the second direction (Y). The buffer unit (200) may be located at one end of the return chamber (300).

[0053] According to one example, liquid treatment chambers (400) may be placed on both sides of the return chamber (300). On one side of the return chamber (300), the liquid treatment chambers (400) may be provided in an A x B arrangement (where A and B are each 1 or a natural number greater than 1) along the first direction (X) and the third direction (Z).

[0054] The return chamber (300) has a return robot (320). A guide rail (324) is provided within the return chamber (300) in a longitudinal direction in the first direction (X), and the return robot (320) can be provided to be movable on the guide rail (324). The return robot (320) includes a hand (322) on which a substrate (M) is placed, and the hand (322) can be provided to move forward and backward, rotate about a third direction (Z) as an axis, and move along the third direction (Z). A plurality of hands (322) are provided spaced apart in the vertical direction, and the hands (322) can move forward and backward independently of each other.

[0055] The buffer unit (200) is provided with a plurality of buffers (220) on which a substrate (M) is placed. The buffers (220) may be spaced apart from each other along a third direction (Z). The front face and rear face of the buffer unit (200) are open. The front face is the side facing the index module (10), and the rear face is the side facing the return chamber (300). The index robot (120) can access the buffer unit (200) through the front face, and the return robot (320) can access the buffer unit (200) through the rear face.

[0056] Below, the substrate (M) processed in the liquid processing chamber (400) is described in detail.

[0057] Figure 2 is a schematic diagram showing the appearance of a substrate being processed in the liquid processing chamber of Figure 1.

[0058] Referring to FIG. 2, the workpiece processed in the liquid processing chamber (400) may be a substrate of any one of a wafer, glass, or photomask. Below, the case where the substrate (M) processed in the liquid processing chamber (400) is a photomask, which is a 'frame' used during the exposure process, will be described as an example.

[0059] The substrate (M) may have a square shape. The substrate (M) may be a photomask, which is a 'frame' used during the photolithography process. At least one reference mark (AK) may be marked on the substrate (M). For example, multiple reference marks (AK) may be formed on each corner area of ​​the substrate (M). The reference mark (AK) may be a mark used for aligning the substrate (M), called an Align Key. Additionally, the reference mark (AK) may be a mark used to derive position information of the substrate (M). For example, a vision sensor (not shown), such as a camera, may be provided in the liquid processing chamber (400), and the vision sensor may capture the reference mark (AK) to acquire an image, and the controller (30) may analyze the image containing the reference mark (AK) to detect the position and orientation of the substrate (M). Additionally, the reference mark (AK) may be used to determine the position of the substrate (M) when transporting the substrate (M).

[0060] Cells (CE) may be formed on a substrate (M). At least one cell (CE) may be formed, for example, multiple cells (CE) may be formed. Multiple patterns may be formed on each cell (CE). The patterns formed on each cell (CE) may be defined as a pattern group. The patterns formed on the cell (CE) may include an exposure pattern (EP) and a first pattern (P1). The exposure pattern (EP) may be used to form an actual pattern on the substrate (M). Additionally, the first pattern (P1) may be a pattern representing the exposure patterns (EP) formed on a single cell (CE). Additionally, multiple first patterns (P1) may be formed on a single cell (CE). The first pattern (P1) may have a shape formed by combining parts of each exposure pattern (EP). The first pattern (P1) may also be called a monitoring pattern. In addition, the first pattern (P1) may also be called a Critical Dimension Monitoring Macro.

[0061] When an operator inspects the first pattern (P1) through a scanning electron microscope (SEM), the quality of the shape of the exposure patterns (EP) formed in a single cell (CE) can be estimated. Additionally, the first pattern (P1) may be an inspection pattern. Furthermore, the first pattern (P1) may be any one of the exposure patterns (EP) participating in the actual exposure process. Additionally, the first pattern (P1) may be both an inspection pattern and an exposure pattern participating in the actual exposure process.

[0062] The second pattern (P2) may be a pattern representing the exposure patterns (EP) formed over the entire substrate (M). For example, the second pattern (P2) may have a shape formed by combining parts of each first pattern (P1).

[0063] When an operator inspects the second pattern (P2) through a scanning electron microscope (SEM), the quality of the shape of the exposure patterns (EP) formed on a single substrate (M) can be estimated. Additionally, the second pattern (P2) may be an inspection pattern. Furthermore, the second pattern (P2) may be an inspection pattern that does not participate in the actual exposure process. The second pattern (P2) may also be called an anchor pattern.

[0064] Hereinafter, a substrate processing device provided to the liquid processing chamber (400) will be described in detail. The liquid processing chamber (400) performs a predetermined process on the substrate (M). More specifically, the process performed in the process chamber (400) may be a Fine Critical Dimension Correction (FCC) process among the mask fabrication processes for the exposure process. The substrate (M) introduced into the liquid processing chamber (400) may require line width adjustment of at least one pattern among the first pattern (P1), the second pattern (P2), and the exposure pattern (EP). That is, in the process chamber (400), a specific pattern (e.g., the second pattern (P2)) among a plurality of patterns formed on the substrate (M) may be etched. In addition, the substrate (M) processed in the process chamber (400) may be a substrate (M) that has undergone pre-processing.

[0065] FIG. 3 is a schematic diagram showing one embodiment of the liquid treatment chamber of FIG. 1. Referring to FIG. 3, the liquid treatment chamber (400) includes a support unit (420), a bowl (430), a chemical liquid supply unit (440), and a laser irradiation unit (500).

[0066] The support unit (420) can support the substrate (M) in the processing space (431) defined by the bowl (430) described later. The support unit (420) can support the substrate (M). The support unit (420) can rotate the substrate (M).

[0067] The support unit (420) may include a chuck (422), a support shaft (424), a driving member (425), and a support pin (426). A support pin (426) may be installed on the chuck (422). The chuck (422) may have a plate shape with a certain thickness. A support shaft (424) may be coupled to the lower part of the chuck (422). The support shaft (424) may be a hollow shaft. Additionally, the support shaft (424) may be rotated by a driving member (425). The driving member (425) may be a hollow motor. When the driving member (425) rotates the support shaft (424), the chuck (422) coupled to the support shaft (424) may rotate. A substrate (M) placed on the support pin (426) installed on the chuck (422) may also rotate together with the rotation of the chuck (422).

[0068] The support pin (426) can support the substrate (M). When viewed from above, the support pin (426) may generally have a circular shape. Additionally, when viewed from above, the support pin (426) may have a shape in which the portion corresponding to the corner area of ​​the substrate (M) is indented downward. That is, the support pin (426) may include a first surface that supports the lower part of the corner area of ​​the substrate (M), and a second surface that faces the side of the corner area of ​​the substrate (M) to restrict lateral movement of the substrate (M) when the substrate (M) is rotated. At least one support pin (426) may be provided. Multiple support pins (426) may be provided. The support pins (426) may be provided in a number corresponding to the number of corner areas of the substrate (M) that have a square shape. The support pin (426) can support the substrate (M) to separate the lower surface of the substrate (M) from the upper surface of the chuck (422).

[0069] The bowl (430) may have a tubular shape with an open top. The bowl (430) may define a processing space (431). The substrate (M) may be liquid treated and heat treated within the processing space (431). The bowl (430) may prevent the processing liquid supplied to the substrate (M) from scattering and being delivered to the liquid supply unit (440) and the laser irradiation unit (500).

[0070] The bowl (430) may include a bottom portion (433), a vertical portion (434), and an inclined portion (435). When viewed from above, the bottom portion (433) may have an opening formed therein into which a support shaft (424) can be inserted. The vertical portion (434) may extend along a third direction (Z) from the bottom portion (433). The inclined portion (435) may extend upward from the vertical portion (434) at an angle. For example, the inclined portion (435) may extend upward at an angle toward a substrate (M) supported by a support unit (420). The bottom portion (433) may have a discharge hole (432) formed therein to discharge the processing liquid supplied by the liquid supply unit (440) to the outside.

[0071] Additionally, the bowl (430) may be combined with a lifting member (not shown) so that its position may be changed along a third direction (Z). The lifting member may be a driving device that moves the bowl (430) in an up-and-down direction. The lifting member may move the bowl (430) upward while liquid treatment and / or heat treatment is performed on the substrate (M), and move the bowl (430) downward when the substrate (M) is introduced into the liquid treatment chamber (400) or when the substrate (M) is removed from the liquid treatment chamber (400).

[0072] The chemical supply unit (440) can supply a chemical solution for liquid treatment of the substrate (M). The chemical supply unit (440) can supply the chemical solution to the substrate (M) supported by the support unit (420). The chemical solution may be an etching solution or a rinse solution. The etching solution may be a chemical. The etching solution may etch a pattern formed on the substrate (M). The etching solution may also be called an etchant. The rinse solution may clean the substrate (M). The rinse solution may be provided as a known chemical solution.

[0073] The liquid supply unit (440) may include a nozzle (441), a fixed body (442), a rotating shaft (443), and a rotating member (444).

[0074] The nozzle (411) can supply a processing liquid to a substrate (M) supported by a support unit (420). One end of the nozzle (411) is connected to a fixed body (442), and the other end can extend from the fixed body (442) toward the substrate (M). The nozzle (411) can extend along a first direction (X) from the fixed body (442). Additionally, the other end of the nozzle (411) can be extended by being bent at a certain angle toward the substrate (M) supported by the support unit (420).

[0075] If necessary, multiple nozzles (441) may be provided. One of the nozzles (441) may be a nozzle for discharging the aforementioned etching liquid, and another of the nozzles (441) may be a nozzle for discharging the aforementioned rinsing liquid.

[0076] The body (442) can fix and support the nozzle (441). The body (442) can be connected to a rotation axis (443) that rotates with respect to the third direction (Z) by a rotating member (444). When the rotating member (444) rotates the rotation axis (443), the body (442) can be rotated with respect to the third direction (Z) as an axis. Accordingly, the discharge port of the nozzle (441) can be moved between a liquid supply position, which is a position that supplies the processing liquid to the substrate (M), and a standby position, which is a position that does not supply the processing liquid to the substrate (M).

[0077] The laser irradiation unit (500) can irradiate a laser onto a substrate (M). The laser irradiation unit (500) can adjust the line width of a pattern formed on a substrate (M) by irradiating a laser onto the substrate (M), on which a liquid film is formed on the upper surface, using a liquid (e.g., etching liquid) supplied by a liquid supply unit (440). The temperature of the area of ​​the substrate (M) irradiated by the laser irradiation unit (500) can be increased. Accordingly, relatively more etching may occur in the area irradiated by the laser, and relatively less etching may occur in the area not irradiated by the laser. In this way, the line width of a pattern formed on the substrate (M) can be adjusted.

[0078] The laser irradiation unit (500) can irradiate a laser onto a substrate (M) that serves as a mask. The laser irradiation unit (500) can adjust the line width of a pattern formed on the substrate (M) by irradiating light onto the substrate (M), on which a liquid film is formed on its upper surface, using a liquid (e.g., etching liquid) supplied by the liquid supply unit (440). The temperature of the region of the substrate (M) irradiated by the light irradiated by the laser irradiation unit (500) can be increased. Accordingly, relatively more etching may occur in the region irradiated by light, and relatively less etching may occur in the region not irradiated by light. In this way, the line width of the pattern formed on the substrate (M) can be adjusted.

[0079] The laser irradiation unit (500) may include a laser source (510), a flat-top optical mechanism (520), a mirror (530), an optical mechanism (540), an optical modulation unit (550), an optical damper (554), a cooling mechanism (556), an irradiation position changing mechanism (560), and a lens (570).

[0080] The laser source (510) can generate a laser (L). The laser source (510) can generate a laser (L) that has straightness. The laser source (510) can generate a laser. The laser source (510) may also be called a laser source. The laser (L) generated by the laser source (510) can be irradiated onto a substrate (M) to heat the substrate (M).

[0081] The flat-top optical device (520) can convert the shape of light output from the laser source (510).

[0082] Figure 4 is a graph showing the distribution of light output from a laser source, and Figure 5 is a graph showing the distribution of light that has passed through a flat-top optical mechanism.

[0083] Referring to FIGS. 3 to 5, the laser output from the laser source (510) may have a Gaussian shape with an intensity distribution that is Gaussian, as shown in FIG. 4. More specifically, the laser output from the laser source (510) may have a high intensity at the center of the laser and gradually decrease in intensity as it moves away from the center of the laser (see FIG. 4). Therefore, when the laser output from the laser source (510) is irradiated onto the optical modulation element (552) and the substrate (M) described later, the region closer to the center of the laser may be heated more, and the region closer to the edge of the laser may be heated less. Accordingly, if the center portion of the laser (L) is transmitted to the optical modulation element (552) described later, the optical modulation element (552) may be damaged, whereas if the edge portion of the laser (L) is transmitted to the optical modulation element (552), the optical modulation efficiency may be reduced. Accordingly, a laser irradiation unit (500) according to one embodiment of the present invention may place a flat-top optical mechanism (520) on the path of a laser (L) output from a laser source (510). The flat-top optical mechanism (520) may be a laser shaper that converts a Gaussian-shaped laser (L) output from a laser source (510) into a flat-top shaped laser (L). The laser (L) output from the laser source (510) may pass through the flat-top optical mechanism (520) and be converted into a flat-top shape having a relatively uniform flat-top distribution of intensity (luminous intensity) (see FIG. 5). By modulating the flat-top shaped laser (L) by an optical modulation element (552), the utilization and optical modulation efficiency of the optical modulation element (552) can be increased.

[0084] Referring again to FIG. 3, the laser (L) passing through the flat-top optical mechanism (520) can be reflected by the first mirror (531) among the mirrors (530). The light reflected by the first mirror (531) can be transmitted to the optical mechanism (540).

[0085] The optical mechanism (540) can reflect the laser (L) that passes through the flat-top optical mechanism (520) and is reflected by the first mirror (531) back to the optical modulation unit (550). The optical mechanism (540) may be a prism, a mirror, etc. The optical mechanism (540) may be applied in various configurations capable of transmitting the laser (L) reflected by the first mirror (531) to the optical modulation unit (550). The laser (L) transmitted to the optical modulation unit (550) may be modulated in the optical modulation unit (550) and output. The laser (L) modulated and output from the optical modulation unit (550) may pass through the optical mechanism (540) and be transmitted to the second mirror (532) among the mirrors (530). The laser (L) transmitted to the second mirror (532) may be reflected and transmitted to the irradiation position changing mechanism (560).

[0086] The optical modulation unit (550) can modulate the transmitted laser (L). The optical modulation unit (550) may include an optical modulation element (552), an optical damper (554), and a cooling mechanism (556).

[0087] The optical modulation element (552) can modulate the shape and distribution of the laser (L) generated by the laser source (510). Here, modulating the shape and distribution of the laser (L) may mean forming a laser (L) shape and distribution corresponding to the irradiation pattern of the laser (L) to be irradiated onto the substrate (M).

[0088] The optical modulation element (552) may be a Digital Micro-mirror Device (DMD).

[0089] That is, the optical modulation unit (550) may be a DMD unit including a Digital Micro-mirror Device (DMD).

[0090] FIG. 6 is a schematic diagram showing the appearance of an optical modulation element. The optical modulation element (552) may include a board substrate (SB) and a plurality of micromirrors (MI). Electrodes corresponding to each of the plurality of micromirrors (MI) may be installed on the board substrate (SB). A controller (30) may transmit a digital signal of “0” or “1” to the electrodes installed on the board substrate (SB). The micromirrors (MI) may be configured to be rotatable. The micromirrors (MI) may be configured to be rotatable with a rotation axis in a direction parallel to a plane passing through the first direction (X), the second direction (Y), or the first direction (X) and the second direction (Y). The micromirror (MI) corresponding to the electrode to which the digital signal of “0” is transmitted may be in an off state, and the micromirror (MI) corresponding to the electrode to which the digital signal of “1” is transmitted may be in an on state. The micromirror (MI) in the On state can irradiate a laser (L) onto the substrate (M), and the laser (L) reflected by the micromirror (MI) in the Off state may not be irradiated onto the substrate (M).

[0091] FIG. 7 is a diagram showing the output of a laser from an optical modulation element. For convenience of explanation, FIG. 7 illustrates the path of a laser (L) reflected by one of the micromirrors (MI). Referring to FIG. 3, FIG. 6 and FIG. 7, the laser (L) reflected by the micromirror (MI) in the ON state can be output and transmitted to a substrate (M).

[0092] FIG. 8 is a diagram showing the laser output from the optical modulation element being removed by the optical damper. For convenience of explanation, FIG. 8 illustrates the path of the laser (L) reflected by one of the micromirrors (MI). Referring to FIG. 3, FIG. 6 and FIG. 8, the micromirror (MI) in the off state reflects the laser (L) so that the laser (L) is not transmitted to the substrate (M). Specifically, the micromirror (MI) is configured to be rotatable as described above. The micromirror (MI) in the off state can rotate to change the path of the laser (L) received from the laser source (510) so that light is not transmitted to the substrate (M). The laser (L) emitted by the micromirror (MI) in the off state cannot pass through the second hole (554b) of the optical damper (554) described later, and can be irradiated onto the inner surface of the optical damper (554) and extinguished. That is, the micromirror in the off state can dump the laser (L).

[0093] FIG. 9 is a diagram illustrating the principle of light removal in a light damper. Referring to FIG. 3 and FIG. 9, the light damper (554) may have a tubular shape having an internal space. The light damper (554) may be formed from a material such as a synthetic resin capable of absorbing and removing a laser (L). An optical device (540) may be placed in the internal space of the light damper (554). An optical modulation element (552) may be placed in the internal space of the light damper (554) or installed on the outside of the light damper (554).

[0094] A first hole (554a) and a second hole (554b) may be formed in the optical damper (554). The first hole (554a) may be formed on the side of the optical damper (554). The first hole (554a) may be a hole through which a laser (L) generated from a laser source (510) and converted through a flat-top optical mechanism (520) passes. The second hole (554b) may be a hole through which a laser (L) modulated by an optical modulation element (552) passes. The second hole (554b) may be formed on the lower part of the optical damper (554).

[0095] A groove (G) may be formed on the inner surface (554c) of the optical damper (554). The groove (G) formed on the inner surface (554c) of the optical damper (554) may be configured to absorb light reflected by the micromirror (MI) in an off state. Specifically, when a laser (L) is transmitted to the groove (G), the laser (L) may be removed by being reflected multiple times in the groove (G). The laser (L) may be removed by losing thermal energy to the optical damper (554) while being reflected multiple times in the groove (G). In FIGS. 3 and 9, the groove (G) is shown as being formed only on the lower part of the optical damper (554) as an example, but it is not limited thereto, and the groove (G) may be formed over the entire inner surface (554c) of the optical damper (554).

[0096] Referring again to FIG. 3, as the light damper (554) removes the laser (L), the temperature of the light damper (554) may increase. Accordingly, a laser irradiation unit (500) according to one embodiment of the present invention may include a cooling mechanism (556) for cooling the light damper (554). The cooling mechanism (556) may be a fan that forms an airflow to cool the light damper (554).

[0097] FIG. 10 is a diagram illustrating the irradiation pattern of a laser output from an optical modulation element. Referring to FIG. 3, FIG. 6 and FIG. 10, as described above, the micromirrors (MI) can be switched between an ON state and an OFF state. Each of the micromirrors (MI) can selectively switch between an ON state, which reflects the laser (L) so that it is irradiated onto a substrate (M), and an OFF state, which dumps the laser (L), by adjusting the direction in which each reflects the laser (L). Each of the micromirrors (MI) can control the time during which the laser (L) is irradiated onto the substrate (M) by controlling the time each maintains the ON state and the OFF state.

[0098] The state transition between the on and off states of each micromirror (MI) can be performed within a very short time. Depending on the on-off state transition of each micromirror (MI), the light modulation unit (550) can form a wide variety of irradiation patterns (HP).

[0099] For example, FIG. 10 shows the amount of heat transferred per unit time to the substrate (M) by the laser (L) reflected from each micromirror (MI) during a unit time (e.g., 1 second). The irradiation pattern (HP) may be composed of a plurality of patterns (P) corresponding to each micromirror (MI). If the amount of heat transferred per unit time to the substrate (M) from each micromirror (MI) is to be increased, the ON state of the micromirror (MI) per unit time may be kept longer and the OFF state short. If the amount of heat transferred per unit time to the substrate (M) from each micromirror (MI) is to be decreased, the ON state of the micromirror (MI) per unit time may be kept shorter and the OFF state long.

[0100] FIG. 11 is a diagram showing a laser irradiation position changing mechanism changing the irradiation position of a laser. Referring to FIG. 3 and FIG. 11, the irradiation position changing mechanism (560) can change the irradiation position by reflecting a laser (L) that has a specific irradiation pattern (HP) modulated by an optical modulation unit (550). The irradiation position changing mechanism (560) may be installed with its position fixed within a liquid treatment chamber (400). The irradiation position changing mechanism (560) may include a first reflection mechanism (561) and a second reflection mechanism (563). The first reflection mechanism (561) may include a first rotary drive (561a) and a first rotary mirror (561b). The second reflection mechanism (563) may include a second rotary drive (563a) and a second rotary mirror (563b). The first rotary drive (561a) and the second rotary drive (563a) may be motors. The laser (L) modulated in the light modulation unit (550) can be reflected by the first reflection mechanism (561) and transmitted to the second reflection mechanism (563). The laser (L) transmitted to the second reflection mechanism (563) can be reflected again by the second reflection mechanism (563) and transmitted to the lens (570). The irradiation position changing mechanism (560) may be a galvano scanner.

[0101] The rotation axis of the first rotating mirror (561b) and the rotation axis of the second rotating mirror (563b) may not be parallel to each other. Additionally, if necessary, the rotation axis of the first rotating mirror (561b) and the rotation axis of the second rotating mirror (563b) may not be perpendicular. Accordingly, the irradiation position of the laser (L) reflected and transmitted through the second mirror (532) can be varied by the rotation of the first rotating mirror (561b) and the second rotating mirror (563b).

[0102] FIG. 12 is a diagram showing the direction of travel of a laser traveling in an oblique direction in a irradiation position changing mechanism being converted to a vertical direction. Referring to FIG. 3 and FIG. 12, the laser (L) whose irradiation position is changed in the irradiation position changing mechanism (560) may travel in an oblique direction. If the laser (L) traveling in an oblique direction by the irradiation position changing mechanism (560) is transmitted directly to the substrate (M), the laser (L) may be incident on the substrate (M) at an oblique angle. To resolve this problem, a lens (570) may be disposed between the irradiation position changing mechanism (560) and the support unit (420) in a laser irradiation unit (500) according to one embodiment of the present invention. The lens (570) may be an F-Theta lens. The lens (570) may be configured to refract light traveling obliquely with respect to a third direction (Z) perpendicular to the ground by the irradiation position changing mechanism (560) into a third direction (Z) which is a vertical direction.

[0103] The irradiation pattern modulated by the light modulation unit (550) may be distorted as it passes through optical components such as an irradiation position changing mechanism (560) or a lens (570).

[0104] FIGS. 13 to 15 are diagrams briefly illustrating that distortion occurs in a pattern irradiated onto a substrate according to optical characteristics. Referring to FIG. 13, a square-shaped irradiation pattern passing through an optical component, such as an irradiation position changing mechanism (560), may be distorted in each of the first direction (X) to the second direction (Y) depending on the position where it is irradiated onto the substrate (M). Also, referring to FIG. 14, a square-shaped irradiation pattern passing through a lens (570), for example, may also be distorted, such as becoming convex.

[0105] As such distortions occur, when the irradiation pattern modulated by the light modulation unit (550) passes through optical components such as an irradiation position changing mechanism (560) or a lens (570) and is irradiated onto the substrate (M), distortions such as those shown in FIG. 15 may occur.

[0106] Figure 16 is a diagram illustrating the distortion of the actual irradiation pattern formed in the center and edge regions of the substrate.

[0107] Such distortion of the investigation pattern reduces the efficiency of the process of heating a target location to etch a specific pattern on the substrate (M), and further causes problems such as degrading the line width adjustment quality of the pattern formed on the substrate (M).

[0108] Figure 16 shows an actual irradiation pattern (RF) that passes through an irradiation position changing mechanism (560) and a lens (570) and is irradiated onto a substrate (M).

[0109] Assuming that the irradiation position changing mechanism (560) and the lens (570) are located at the upper center of the substrate (M), when viewed from above, if we compare the actual irradiation pattern (RF1) irradiated to the area around the point where the irradiation position changing mechanism (560) and the lens (570) are located, i.e., the central area of ​​the substrate (M), with the actual irradiation pattern (RF2) irradiated to the edge area far from the central area of ​​the substrate (M), it can be confirmed that the distortion of the actual irradiation pattern (RF2) irradiated to the edge area of ​​the substrate (M) is greater than that of the actual irradiation pattern (RF1) irradiated to the central area of ​​the substrate (M).

[0110] That is, compared to the actual irradiation pattern (RF1) irradiated to the central region of the substrate (M), the actual irradiation pattern (RF2) irradiated to the edge region of the substrate (M) may exhibit more distortion, such as slip and / or rotation. The degree of distortion may vary depending on the location where the irradiation pattern is irradiated on the substrate (M).

[0111] Accordingly, considering that the irradiation pattern modulated by the light modulation unit (550) is distorted, a process preparation step is required to correct the pattern irradiated onto the actual substrate (M) so that it becomes identical to the target irradiation pattern.

[0112] FIG. 17 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. Hereinafter, a substrate processing method according to an embodiment of the present invention will be described with reference to FIGS. 17 to 28. The substrate processing method according to an embodiment of the present invention may be a mask processing method for processing a mask. The substrate processing method described below may be performed by the controller (30) described above controlling the components provided by the substrate processing device. The substrate processing method described below may be performed by the substrate processing device described above.

[0113] Referring to FIG. 17, a substrate processing method according to one embodiment of the present invention may include a process preparation step (S100) and a process processing step (S200). The process preparation step (S100) and the process processing step (S200) may be performed in a time series order.

[0114] The process preparation step (S100) may include a distortion amount acquisition step (S120), a distortion correction step (S140), and a correction verification step (S160). The distortion amount acquisition step (S120), the distortion correction step (S140), and the correction verification step (S160) may be performed in the order of a time series.

[0115] In the process preparation step (S100), the degree of distortion of the irradiation pattern modulated by the optical modulation unit (550) is measured, and the pattern irradiated onto the actual substrate (M) is corrected so that it becomes identical to the target irradiation pattern.

[0116] When irradiating the irradiation pattern in the process preparation step (S100), the output of the irradiated laser may be lower than the output of the irradiated laser in the process processing step (S200).

[0117] In the process preparation step (S100), correction can be performed by irradiating a irradiation pattern onto a substrate (M) on a support unit (420). At this time, the substrate (M) placed on the support unit (420) may be a test substrate or a dummy substrate. Alternatively, a grid pattern target may be placed on the support unit (420) and a irradiation pattern may be irradiated onto the grid pattern target to perform correction. Alternatively, the irradiation pattern may be irradiated directly onto the support unit (420). Below, it will be illustrated and explained that a grid pattern target is placed on the support unit (420) and a irradiation pattern is irradiated onto the grid pattern target to measure and correct the amount of distortion of the irradiation pattern.

[0118] In the distortion amount acquisition step (S120), the amount of distortion that occurs when the irradiation pattern modulated by the optical modulation unit (550) is actually irradiated onto the irradiation area (IF) can be measured and acquired.

[0119] FIG. 18 is a diagram showing the actual irradiation position of the laser irradiated to the target irradiation position of each irradiation area in the distortion amount acquisition step of FIG. 17, and FIG. 19 is a diagram briefly showing the method of acquiring the distortion amount of the laser irradiation pattern in the distortion amount acquisition step of FIG. 17.

[0120] Below, the step of obtaining the distortion amount of FIG. 17 will be explained in detail with reference to FIG. 18 and FIG. 19.

[0121] Referring to FIG. 18, the grid pattern target can be divided into a plurality of irradiation areas (IF). The size of the irradiation area (IF) can be appropriately set according to the size of the irradiation pattern irradiated onto the substrate (M) in the process processing step (S200). The combined area of ​​all the plurality of irradiation areas (IF) can correspond to the area where laser irradiation is required on the substrate (M) supported by the support unit (420) in the process processing step (S200).

[0122] In the distortion amount acquisition step (S120), the irradiation pattern modulated by the optical modulation unit (550) is irradiated into a preset irradiation area (IF).

[0123] FIG. 18 illustrates an example of a center point (CP) of a grid pattern target, a target irradiation position (TP) to irradiate the irradiation pattern of a laser (L) modulated by an optical modulation unit (550), and an actual irradiation position (RP) where the irradiation pattern is actually irradiated. The five target irradiation positions (TP) and five actual irradiation positions (RP) shown in FIG. 18 correspond one-to-one with each other sequentially from left to right. For example, the target irradiation position (TP) shown on the far left corresponds to the actual irradiation position (RP) shown on the far left, and the target irradiation position (TP) shown on the far right corresponds to the actual irradiation position (RP) shown on the far right.

[0124] The difference in distance or shape between each target irradiation position (TP) and the corresponding actual irradiation position (RP) may represent the amount of distortion of the irradiated laser. As previously observed in FIG. 16, compared to the actual irradiation pattern irradiated to the center point (CP) of the grid pattern target, the actual irradiation pattern irradiated to the edge region of the grid pattern target may exhibit more distortion, such as slip and / or rotation. Accordingly, the amount of laser distortion may increase as the distance from the center point (CP) of the grid pattern target increases. For example, it can be observed that the amount of laser distortion is greatest when irradiated to the target irradiation position (TP) shown furthest to the right among the target irradiation positions (TP) illustrated in FIG. 18. Furthermore, it can be observed that the amount of distortion relative to the actual irradiation position (RP) increases as the distance from the center point (CP) of the grid pattern target increases, that is, as one moves from the left to the right target irradiation position (TP).

[0125] FIG. 19 illustrates one of the multiple investigation areas (IF) illustrated in FIG. 18. In the distortion amount acquisition step (S120), data of an investigation pattern investigated by a preset investigation area (IF) can be acquired. For each point within the investigation area (IF), the coordinates (X1, Y1) of the target investigation location (TP) and the coordinates (X2, Y2) of the actual investigation location (RP) of the investigation pattern can be compared, and the compared coordinate values ​​can be vectorized to generate a data map. The actual investigation location (RP) may refer to the investigation location of the actual investigation pattern investigated by the target investigation location (TP). For example, the vectorized data may appear in the form (X2-X1, Y2-Y1) for each investigation location. Each of the vectorized values ​​may represent the distortion amount for each investigation location of the investigation pattern. FIG. 19 illustrates only one target investigation location (TP) and one actual investigation location (RP) in the investigation area (IF). However, unlike Fig. 19, in the distortion amount acquisition step (S120), the investigation pattern is investigated over the entire investigation area (IF), and the distortion amount between the target investigation location (TP) and the actual investigation location (RP) can be acquired as a data map.

[0126] In the distortion amount acquisition step (S120), the measurement of the distortion amount may be performed by a measuring member or an imaging member not shown. The distortion amount data may be obtained by measuring or imaging the beam profile or output of the irradiation pattern irradiated by the grid pattern target, that is, the beam profile or output of the irradiated laser.

[0127] After acquiring the amount of distortion for each irradiation position of the irradiation pattern in the distortion amount acquisition step (S120), the distortion correction step (S140) is performed.

[0128] In the distortion correction step (S140), the distortion amount obtained in the distortion amount acquisition step (S120) is inversely calculated to correct the actual irradiation position (RP) of the irradiation pattern so that it matches the target irradiation position (TP). Accordingly, the irradiation pattern can be irradiated at the target irradiation position (TP).

[0129] FIG. 20 is a diagram showing the actual irradiation position of the laser after distortion correction is performed in the distortion correction step of FIG. 17. Referring to FIG. 19 and FIG. 20, a correction pattern is generated by inversely calculating a vectorized value (X2-X1, Y2-Y1) obtained by comparing the coordinates (X1, Y1) of the target irradiation position (TP) and the coordinates (X2, Y2) of the actual irradiation position (RP) of the irradiation pattern, and the generated correction pattern is input to the optical modulation unit (550) so that the corrected actual irradiation position (RP') matches the target irradiation position (TP).

[0130] Hereinafter, an embodiment of a method for correcting an investigation pattern will be described in more detail with reference to FIGS. 21 to 23.

[0131] FIG. 21 illustrates a plurality of target irradiation positions and corresponding actual irradiation positions for a single irradiation area. After acquiring a data map for the amount of distortion of each irradiation area (IF) in the distortion amount acquisition step (S120), a correction pattern is generated by inversely calculating the amount of distortion between the coordinates of the target irradiation position (TP) of the laser (L) and the coordinates of the actual irradiation position (RP) as described above. According to one embodiment, the inverse calculation can be performed by taking a point where the amount of distortion is zero, i.e., a point where no distortion occurs, such as the center point of the irradiation area (IF) in FIG. 21, as a reference point, and applying point symmetry to the actual irradiation position (RP) with respect to the corresponding target irradiation position (TP).

[0132] FIG. 22 is a diagram showing the investigation pattern and the actual investigation pattern in the distortion amount acquisition step of FIG. 17, and FIG. 23 is a diagram showing the correction pattern acquired in the distortion correction step of FIG. 18.

[0133] The actual irradiation pattern (RF) and target irradiation pattern (TF) shown in FIG. 22 are simplified representations of irradiation patterns composed of multiple actual irradiation positions (RP) and target irradiation positions (TP) of FIG. 21, respectively.

[0134] To correct the actual irradiation pattern (RF) so that it matches the target irradiation pattern (TF), correction can be performed based on a reference point, which is a point where the coordinates of the target irradiation position (TP) and the actual irradiation position (RP) are the same. The reference point may be a point where no distortion occurs in the actual irradiation pattern (RF). The correction can be performed by an inverse operation in which the actual irradiation position (RP) is point-symmetric with respect to the corresponding target irradiation position (TP). For example, according to one embodiment illustrated in FIG. 22, it is necessary to perform a correction by rotating the actual irradiation pattern (RF) counterclockwise to correct the actual irradiation pattern (RF) so that it matches the target irradiation pattern (TF). As illustrated in FIG. 23, a reference point where no distortion occurs within the actual irradiation pattern (RF) can be found, and each irradiation position (RP) of the actual irradiation pattern (RF) can be point-symmetric with respect to this reference point. The correction pattern (CF) illustrated in FIG. 23 is the actual irradiation pattern (RF) distorted by point-symmetric with respect to the reference point. When the acquired correction pattern (CF) is input into the optical modulation unit (550) and irradiated, the corrected actual irradiation pattern (RF') matches the target irradiation pattern (TF).

[0135] In the distortion correction step (S140), after the correction pattern (CF) generated for each of the plurality of irradiation areas (IF) is input into the optical modulation unit (550), the distortion correction step (S140) is terminated and the correction verification step (S160) is performed.

[0136] FIG. 24 is a diagram showing the state of examining the correction pattern in the correction verification step of FIG. 17. In the correction verification step (S160), the correction pattern (CF) is examined as an examination area (IF) to check whether the target examination pattern (TF) and the corrected actual examination pattern (RF') match. In other words, in the distortion correction step (S140), it is possible to check whether the correction of the examination pattern was performed well, that is, whether the correction pattern is suitable.

[0137] By inversely calculating the distortion amount vectorized over the entire irradiation area (IF) to correct the actual irradiation pattern so that it is irradiated at the target irradiation location, it is possible to ensure that the irradiation pattern is irradiated at a target point when irradiating an arbitrary area of ​​the substrate (M) in the process processing step (S200). By correcting the distortion that occurs as the laser (L) passes through the optical component, the accuracy of heating the substrate (M) through the laser (L) can be increased, the line width of the pattern formed on the substrate (M) can be effectively adjusted, and the etching efficiency and the quality of the substrate (M) can be improved.

[0138] If a suitable correction pattern is generated by correcting distortion in the process preparation step (S100), the process preparation step (S100) is terminated and the process processing step (S200) can be performed. The process processing step (S200) can be performed if the correction pattern (CF) confirmed in the correction verification step (S160) is suitable.

[0139] If the process preparation step (S100) is performed without bringing the substrate (M) into the liquid treatment chamber (400), the process treatment step (S200) can be performed after bringing the substrate (M) into the liquid treatment chamber (400).

[0140] The process of processing the substrate (M) in the process processing step (S200) may be the Fine Critical Dimension Correction (FCC) process described above. The process processing step (S200) etches a specific area of ​​the substrate (M). More specifically, the process processing step (S200) may etch the area where the second pattern (P2) is formed among the first pattern (P1) and the second pattern (P2) formed on the substrate (M).

[0141] The process treatment step (S200) may include a treatment liquid supply step (S220), a heating step (S240), and a rinse liquid supply step (S260). The treatment liquid supply step (S220), the heating step (S240), and the rinse liquid supply step (S260) may be performed sequentially.

[0142] FIG. 25 is a cross-sectional view showing a substrate processing apparatus performing a processing solution supply step according to one embodiment. As shown in FIG. 25, the processing solution supply step (S220) supplies a processing solution (C) onto a substrate (M). According to one embodiment, the processing solution supply step (S220) may supply the processing solution (C) while rotating the substrate (M), or alternatively, the processing solution (C) may be supplied without rotating the substrate (M). The processing solution (C) supplied in the processing solution supply step (S220) may be an etching solution. The processing solution (C) may also be referred to as an etchant. When the processing solution supply step (S220) is completed, a liquid film formed by the processing solution (C) may be formed on the substrate (M). In the processing liquid supply step (S220), the support unit (420) may rotate the substrate (M), or support the substrate (M) without rotating it to prevent the alignment of the substrate (M) from becoming misaligned. When the processing liquid (C) is supplied to the substrate (M) that has stopped rotating, the processing liquid (C) may be supplied in an amount sufficient to form a liquid film or a puddle.

[0143] For example, the amount of processing liquid (C) supplied to the substrate (M) can be supplied such that it covers the entire upper surface of the substrate (M), but does not flow down from the substrate (M), or even if it does flow down, the amount is not large. If necessary, the processing liquid (C) can be supplied to a rotating substrate (M), or the processing liquid (C) can be supplied to the entire upper surface of the substrate (M) while changing the position of the nozzle (452) to form a liquid film or pudding on the substrate (M).

[0144] FIGS. 26 and 27 are cross-sectional views showing a substrate processing apparatus performing a heating step according to one embodiment. As shown in FIG. 26, in the heating step (S240), a laser (L) is irradiated from a laser irradiation unit (500) to heat the substrate (M). More specifically, the laser irradiation unit (500) irradiates a laser (L) to a specific area of ​​the substrate (M) on which a liquid film is formed (e.g., an area on which a second pattern (P2) is formed). The laser irradiated onto the substrate (M) may be irradiated to a specific area on the substrate (M) in the form of an irradiation pattern modulated by an optical modulation unit (550).

[0145] According to one embodiment, the heating step (S240) may include a laser modulation step (S242) and a laser irradiation step (S244).

[0146] In the laser modulation step (S242), the optical modulation unit (550) can modify the shape or distribution of the laser individually or simultaneously by controlling the on / off state of the micromirror (MI) described above. In the laser modulation step (S242), the laser (L) can be modulated according to the data of the correction pattern (CF) generated in the process preparation step (S100) and input to the optical modulation unit (550).

[0147] In the laser irradiation step (S244), a laser (L) can be irradiated onto the upper surface of a substrate (M) on which a liquid film is formed by a processing liquid (C) to heat a specific area of ​​the substrate (M). While the entire pattern on the substrate (M) is etched by the processing liquid (C), the specific area irradiated by the laser (L) can be heated to allow for further etching. The degree of etching depends on the amount of heat delivered by the laser (L) per unit time. Since the optical modulation unit (550) of the present invention can form an irradiation pattern having various shapes, the etching of the substrate (M) can be controlled in various ways. As the laser irradiation unit (500) irradiates the correction pattern (CF) onto the substrate (M), an actual irradiation pattern (RF') that is corrected to be identical to the target irradiation pattern (TF) can be irradiated onto the substrate despite distortion of the optical component.

[0148] During the laser irradiation step (S244), the support unit (420) can support the substrate (M) without rotating it. During the laser irradiation step (S244), the horizontal and vertical positions of the substrate (M) can be maintained in a fixed state.

[0149] As illustrated in FIG. 27, the laser irradiation unit (500) can irradiate a laser (L) to a specific area of ​​the substrate (M) and then change the path of the laser (L) through the irradiation position changing mechanism (560) to irradiate a desired area of ​​the substrate (M), that is, another area on the substrate (M) that requires heating. At this time, the laser (L) can be modulated by applying a correction pattern corresponding to the irradiation area on the substrate (M).

[0150] When the heating step (S240) is finished, the rinse liquid supply step (S260) is performed.

[0151] FIG. 28 is a cross-sectional view showing a substrate processing apparatus performing a rinse solution supply step according to one embodiment. The rinse solution supply step (S260) supplies a rinse solution (R) to a substrate (M). More specifically, in the rinse solution supply step (S260), the rinse solution (R) can be supplied to a rotating substrate (M). The rinse solution (R) supplied to the substrate (M) removes etching impurities generated during the process of performing the processing solution supply step (S220) and / or heating step (S240) from the substrate (M). In addition, the rinse solution (R) cleans the substrate (M) by replacing the liquid film formed on the substrate (M).

[0152] In the above-described embodiment, the distortion correction step (S140) is illustrated and explained as performing inverse calculation by taking a point where no distortion occurs as a reference point and applying point symmetry to the actual irradiation position (RP) with respect to the corresponding target irradiation position (TP). However, the method of correcting distortion is not limited to this, and various methods can be applied to correct the pattern irradiated onto the actual substrate (M) so that it matches the target irradiation pattern.

[0153] In the above-described embodiment, for convenience of explanation, the shape of the target irradiation position (TP) and the actual irradiation position (RP) where the laser (L) is irradiated is illustrated and described as a point light source. However, the laser (L) can be irradiated by modulating it into various shapes and forms by the light modulation unit (550). For example, it can be irradiated in the shape of a square beam.

[0154] In the above-described embodiment, it was explained that a single laser irradiation unit (500) irradiates a laser (L) to a specific area of ​​the substrate (M). However, alternatively, a plurality of laser irradiation units (500) may be provided, and each may irradiate a laser (L) to a different area of ​​the substrate (M).

[0155] In the example described above, the substrate (M) processed in the liquid processing chamber (400) is described as a photo mask, which is a 'frame' used during the photolithography process, but it is not limited thereto. For example, the substrate may be provided as a substrate of various types and shapes requiring etching or adjustment of pattern line width, such as a wafer, a glass substrate, or a metal film.

[0156] It should be understood that exemplary embodiments are disclosed herein and that other variations may be possible. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but may be interchangeable and used in selected embodiments where applicable, even if not specifically illustrated or described. Such variations should not be construed as departing from the spirit and scope of the present disclosure, and all such variations that are obvious to a person skilled in the art are intended to be included within the scope of the following claims. Explanation of the symbols

[0157] Substrate: M Support Units: 420 Liquid supply unit: 440 Laser Irradiation Unit: 500 Laser Source: 510 Optical instrument: 540 Optical modulation unit: 550 Optical modulation element: 552 Investigation Area: IF Target Survey Location: TP Actual investigation location: RP Target Investigation Pattern: TF Actual Survey Pattern: RF Correction Pattern: CF Corrected actual investigation pattern: RF'

Claims

Claim 1 A method for processing a substrate comprises: a process preparation step for setting a pattern of a laser irradiated onto the substrate; and a process processing step for processing the substrate by irradiating the laser onto the substrate after the process preparation step, wherein the process preparation step comprises: a distortion amount acquisition step for obtaining a distortion amount of the irradiation pattern generated from a laser source and modulated by an optical modulation unit by irradiating the irradiation pattern onto a preset irradiation area; and a distortion correction step for generating a correction pattern based on the distortion amount obtained in the distortion amount acquisition step and inputting the correction pattern to an optical modulation unit; wherein the process processing step comprises a heating step for heating the substrate by irradiating the correction pattern onto the substrate, wherein the substrate is divided into a plurality of irradiation areas, and wherein, in the distortion amount acquisition step, a data map of the distortion amount is obtained for each of the plurality of irradiation areas. Claim 2 A substrate processing method according to claim 1, wherein, in the distortion amount acquisition step, the irradiation pattern is irradiated onto a target irradiation area, and then data of the actual irradiation pattern irradiated by the laser is acquired. Claim 3 In paragraph 2, the acquisition of data of the actual irradiation pattern is a substrate processing method performed by measuring the beam profile and / or output of the irradiated laser. Claim 4 A substrate processing method according to claim 2, wherein in the step of acquiring the distortion amount, the coordinates of the target investigation position of the investigation pattern and the investigation position of the acquired actual investigation pattern are compared, and the compared coordinate values ​​are vectorized to acquire the distortion amount. Claim 5 A substrate processing method for generating a correction pattern, wherein, in the distortion correction step, the vectorized distortion amount is inversely calculated to correct the actual irradiation pattern so that it is irradiated at the target irradiation position. Claim 6 A substrate processing method according to claim 5, wherein in the distortion correction step, a reference point where no distortion occurs is set by comparing the investigation pattern with the actual investigation pattern, and a correction pattern is generated by point-symmetrically applying the investigation pattern around the reference point. Claim 7 A substrate processing method according to claim 1, wherein the process preparation step further includes a correction verification step after the distortion amount correction step, wherein the correction pattern is investigated into the investigation area to verify the suitability of the correction pattern, and if the correction pattern verified in the correction verification step is suitable, the process processing step is performed. Claim 8 A substrate processing method according to claim 1, wherein the heating step comprises: a laser modulation step of modulating the laser using the optical modulation unit; and a laser irradiation step of irradiating the correction pattern of the modulated laser onto the substrate. Claim 9 A substrate processing method according to claim 1, wherein the process processing step further comprises a processing solution supply step of supplying a processing solution to the substrate prior to the heating step. Claim 10 A substrate processing method according to claim 1, wherein in the distortion correction step, the correction pattern corresponding to each of the plurality of investigation regions is generated. Claim 11 A method for processing a substrate according to claim 1, wherein the optical modulation unit is a digital micromirror device (DMD) unit, and the DMD unit comprises rotatably provided micromirrors; and a board substrate on which the micromirrors are installed, wherein the modulation of the laser is achieved by switching between an On state in which the laser is reflected so as to be irradiated onto the substrate and an Off state in which the laser is dumped by adjusting the direction in which each of the micromirrors reflects the laser. Claim 12 A method for processing a substrate comprises: a process preparation step for setting an irradiation pattern of a laser irradiated onto the substrate; and a process processing step for processing the substrate by irradiating the laser onto the substrate after the process preparation step, wherein the process preparation step comprises: a distortion amount acquisition step for obtaining a distortion amount of an irradiation pattern generated from a laser source and modulated by an optical modulation unit by irradiating a preset irradiation area; a distortion correction step for generating a correction pattern based on the distortion amount obtained in the distortion amount acquisition step and inputting the correction pattern into an optical modulation unit; and a correction verification step for verifying the suitability of the correction pattern by irradiating the correction pattern onto the irradiation area, wherein the substrate is divided into a plurality of irradiation areas, and in the distortion amount acquisition step, a data map of the distortion amount is obtained for each of the plurality of irradiation areas, and the process processing step comprises: a processing liquid supply step for supplying a processing liquid to the substrate; and a heating step for heating the substrate by irradiating the correction pattern onto the substrate on which a liquid film of the processing liquid is formed, wherein the optical modulation unit is a digital micromirror device (DMD) unit. Claim 13 A substrate processing method according to claim 12, wherein the heating step comprises: a laser modulation step of modulating the laser using the light modulation unit; and a laser irradiation step of irradiating the correction pattern of the modulated laser onto the substrate. Claim 14 A substrate processing method according to claim 13, wherein, in the step of acquiring the distortion amount, the irradiation pattern is irradiated onto a target irradiation area, and then data of the actual irradiation pattern irradiated by the laser is acquired. Claim 15 A substrate processing method according to claim 14, wherein in the step of acquiring the distortion amount, the coordinates of the target investigation position of the investigation pattern and the investigation position of the acquired actual investigation pattern are compared, and the compared coordinate values ​​are vectorized to acquire the distortion amount. Claim 16 A substrate processing method for generating a correction pattern according to claim 15, wherein in the distortion correction step, the vectorized distortion amount is inversely calculated to correct the actual irradiation pattern so that it is irradiated at the target irradiation position. Claim 17 A substrate processing method according to claim 16, wherein in the distortion correction step, a reference point where no distortion occurs is set by comparing the investigation pattern with the actual investigation pattern, and a correction pattern is generated by point-symmetrically applying the investigation pattern around the reference point. Claim 18 A method for processing a substrate comprises: a process preparation step for setting a pattern of a laser irradiated onto the substrate; and a process processing step for processing the substrate by irradiating the laser onto the substrate after the process preparation step, wherein the process preparation step comprises: a distortion amount acquisition step for obtaining a distortion amount of the irradiation pattern for each of the plurality of irradiation areas by irradiating an irradiation pattern generated from a laser source and modulated by an optical modulation unit; a distortion correction step for generating a correction pattern corresponding to each of the plurality of irradiation areas based on the distortion amount obtained in the distortion amount acquisition step and inputting the correction pattern to an optical modulation unit; and a correction verification step for verifying the suitability of the correction pattern by irradiating the correction pattern onto each of the plurality of irradiation areas, wherein the process processing step comprises: a processing liquid supply step for supplying a processing liquid to the substrate; and a heating step for heating the substrate on which a liquid film of the processing liquid is formed, wherein the heating step comprises a laser modulation step for modulating the laser using the optical modulation unit. A method for processing a substrate, comprising: a laser irradiation step of irradiating the substrate with the correction pattern formed through the modulation of the laser; wherein the optical modulation unit is a digital micromirror device (DMD) unit. Claim 19 A substrate processing method according to claim 18, wherein, in the distortion amount acquisition step, the irradiation pattern is irradiated to each of the plurality of irradiation areas, data of the actual irradiation pattern irradiated by the laser is acquired, the coordinates of the target irradiation position of the irradiation pattern and the acquired irradiation position of the actual irradiation pattern are compared, and the compared coordinate values ​​are vectorized to acquire the distortion amount, and in the distortion correction step, the vectorized distortion amount is inversely calculated to correct the actual irradiation pattern so that it is irradiated to the target irradiation position. Claim 20 A substrate processing method according to claim 19, wherein in the distortion correction step, a reference point where no distortion occurs is set by comparing the investigation pattern with the actual investigation pattern, and a correction pattern is generated by point-symmetrically applying the investigation pattern around the reference point.

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