Apparatus and method for processing substrate

Abstract

The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing method for removing an oxide film formed on a substrate. According to the substrate processing apparatus and method of an embodiment of the present invention, by supplying a process gas onto a substrate while the substrate is placed on a substrate support maintained at a low temperature, the process gas can be stably adsorbed onto a natural oxide film formed on the substrate to form a reaction product.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing method for removing an oxide film formed on a substrate. Background Technology

[0003] Generally, semiconductor devices or display devices are manufactured by depositing various materials in the form of thin films on a substrate and patterning them.

[0004] However, when a substrate is exposed to the atmosphere while moving through each process, an indigenous oxide film forms on the surface due to oxygen or moisture. Because this indigenous oxide film possesses incomplete crystallinity, its quality is inferior compared to silicon oxide films formed by thermal oxidation, and it causes many problems, such as connection instability and wiring resistance in semiconductor devices or display equipment.

[0005] Conventionally, a wet cleaning process was performed in a separate device to remove such native oxide films. Subsequently, the substrate, after the cleaning process was completed, was moved to a substrate processing device to perform substrate processing, such as depositing a thin film. However, removing native oxide films in a separate device for performing such wet cleaning processes resulted in increased production costs due to the addition of expensive equipment. Furthermore, native oxide films would re-form on the surface of the substrate during transport, making it impossible to effectively remove the native oxide films. In addition, when removing native oxide films from patterned substrates, not only the native oxide films but also the patterns were etched, leading to a degradation in the quality of the manufactured semiconductor devices or display devices. Prior art literature

[0007] (Patent Document 0001) KR 10-2010-0112888 A The problem to be solved

[0008] The present invention provides a substrate processing method capable of effectively removing an oxide film formed on a substrate. means of solving the problem

[0010] A substrate processing method according to an embodiment of the present invention is a substrate processing method comprising a substrate support member having a first temperature controller provided therein and a gas injection unit disposed opposite to the substrate support member having a second temperature controller provided therein, comprising the steps of: placing a substrate on the substrate support member controlled to a first temperature; injecting a process gas comprising an activated nitrogen-containing gas, an activated hydrogen-containing gas, and a fluorine-containing gas onto the substrate through the gas injection unit; moving the substrate support member toward the gas injection unit; and heat-treating the substrate with heat emitted from the gas injection unit controlled to a second temperature.

[0011] The first temperature above may be lower than the second temperature above.

[0012] The first temperature mentioned above may have a value of 10℃ or higher and 30℃ or lower.

[0013] The above second temperature may have a value of 200℃ or higher and 300℃ or lower.

[0014] The step of moving the substrate support may involve moving the substrate support so that the substrate support and the gas injection part have a gap of 5 mm or more and 20 mm or less.

[0015] In the step of heat-treating the substrate, the substrate may be heated to a temperature of 100°C or higher.

[0016] The step of heat-treating the above substrate can be performed with the supply of the process gas stopped.

[0017] The step of injecting the process gas may include: injecting an activated nitrogen-containing gas and an activated hydrogen-containing gas onto the substrate; and supplying a fluorine-containing gas onto the substrate.

[0018] In the step of injecting the process gas, the natural oxide film formed on the substrate is reacted with the nitrogen component, hydrogen component, and fluorine component included in the process gas, and in the step of heat-treating the substrate, the reaction product generated by the reaction of the natural oxide film with the nitrogen component, hydrogen component, and fluorine component can be sublimated.

[0019] The nitrogen-containing gas supplied to the above gas injection unit may include at least one of N2 gas and NH3 gas.

[0021] In addition, a substrate processing method according to an embodiment of the present invention is a substrate processing method comprising a substrate processing device including a remote plasma generator, a substrate support having a cooling member provided therein, and a gas injection unit disposed opposite to the substrate support having a heating member provided therein, comprising the steps of: placing a substrate on the substrate support, which is controlled to a first temperature by the cooling member; supplying a nitrogen-containing gas to the front end of the remote plasma generator to supply the activated nitrogen-containing gas to the gas injection unit; supplying a hydrogen-containing gas to the rear end of the remote plasma generator to supply the activated hydrogen-containing gas to the gas injection unit; supplying a fluorine-containing gas to the gas injection unit; moving the substrate support toward the gas injection unit; and heat-treating the substrate with heat emitted from the gas injection unit, which is controlled to a second temperature by the heating member.

[0023] Meanwhile, a substrate processing apparatus according to an embodiment of the present invention comprises: a chamber; a gas supply unit connected to the chamber and extending to the outside of the chamber; a remote plasma generator installed in the gas supply unit outside the chamber; a first gas inlet pipe for supplying a nitrogen-containing gas into the chamber via the remote plasma generator; a second gas inlet pipe connected between a location where the nitrogen-containing gas is supplied to the gas supply unit and a location where the gas supply unit is connected to the chamber, for supplying a hydrogen-containing gas into the chamber; and a third gas inlet pipe connected between a location where the hydrogen-containing gas is supplied to the gas supply unit and a location where the gas supply unit is connected to the chamber, for supplying a fluorine-containing gas into the chamber.

[0024] The distance between the location where the remote plasma generator is installed and the location where hydrogen-containing gas is supplied to the gas supply unit may be shorter than the distance between the location where hydrogen-containing gas is supplied to the gas supply unit and the location where fluorine-containing gas is supplied to the gas supply unit.

[0025] The distance between the location where the gas supply unit is connected to the chamber and the location where a fluorine-containing gas is supplied to the gas supply unit may be shorter than the distance between the location where a hydrogen-containing gas is supplied to the gas supply unit and the location where a fluorine-containing gas is supplied to the gas supply unit.

[0026] The nitrogen-containing gas and hydrogen-containing gas supplied to the above gas supply unit can be activated and supplied into the above chamber. Effects of the invention

[0028] According to the substrate processing apparatus and method of an embodiment of the present invention, by supplying a process gas onto a substrate while the substrate is placed on a substrate support maintained at a low temperature, the process gas can be stably adsorbed onto a natural oxide film formed on the substrate to form a reaction product.

[0029] In addition, by moving the substrate support to heat-treat the substrate, the reaction product formed on the substrate can be rapidly sublimated without changing the temperature of the substrate support.

[0030] In addition, by supplying activated nitrogen-containing gas, hydrogen-containing gas, and fluorine-containing gas from a plasma generator located outside the chamber onto the substrate, a process gas capable of reacting with the natural oxide film formed on the substrate can be generated, thereby effectively removing the natural oxide film formed on the substrate. Brief explanation of the drawing

[0032] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing the supply of process gas according to a substrate processing method according to an embodiment of the present invention. FIG. 3 is a drawing showing the thermal treatment of a substrate according to a substrate processing method according to an embodiment of the present invention. Specific details for implementing the invention

[0033] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms, and the embodiments of the present invention are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. To explain the invention in detail, the drawings may be exaggerated, and like reference numerals in the drawings refer to like elements.

[0035] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention.

[0036] Referring to FIG. 1, a substrate processing device according to an embodiment of the present invention comprises a chamber (10), a gas supply unit (40) connected to the chamber (10) and extending to the outside of the chamber (10), a remote plasma generator (50) installed on the gas supply unit (40) outside the chamber (10), a first gas inlet pipe (42) for supplying a nitrogen-containing gas into the chamber (10) via the remote plasma generator (50), a second gas inlet pipe (44) connected between a location where the nitrogen-containing gas is supplied to the gas supply unit (40) and a location where the gas supply unit (40) is connected to the chamber (10) for supplying a hydrogen-containing gas into the chamber (10), and a third gas inlet pipe (46) connected between a location where the hydrogen-containing gas is supplied to the gas supply unit (40) and a location where the gas supply unit (40) is connected to the chamber (10) for supplying a fluorine-containing gas into the chamber (10).

[0037] More specifically, a substrate processing device according to an embodiment of the present invention may include a chamber (10) for processing a substrate, a substrate support member (30) provided within the chamber (10) and for supporting a substrate (S) provided within the chamber (10), and a gas injection member (20) provided within the chamber (10) so as to be positioned opposite to the substrate support member (30) and for injecting a process gas toward the substrate support member (30). Here, the substrate processing device according to an embodiment of the present invention may further include a gas supply unit (40) having one end connected to the gas injection unit (20) and the other end extending to the outside of the chamber (10), a first gas inlet pipe (42) connected to the gas supply unit (40) for supplying nitrogen-containing gas to the gas supply unit (40), a second gas inlet pipe (44) connected to the gas supply unit (40) for supplying hydrogen-containing gas to the gas supply unit (40), and a third gas inlet pipe (46) connected to the gas supply unit (40) for supplying fluorine-containing gas to the gas supply unit (40). In addition, the substrate processing device may further include a remote plasma generator (50) installed in the gas supply unit (40), and may further include a control unit (not shown) for controlling the gas injection unit (20) and the substrate support unit (30).

[0038] The chamber (10) provides a predetermined process space and maintains it airtight. The chamber (10) may include a body (12) having a predetermined process space, comprising a planar portion that is approximately circular or square and a side wall portion that extends upward from the planar portion, and a cover (14) that is located on the body (12) in an approximately circular or square shape to maintain the chamber (10) airtight. However, the chamber (10) is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate (S). Meanwhile, an exhaust port (not shown) may be formed in a predetermined area on the lower surface of the chamber (10), and an exhaust pipe (not shown) connected to the exhaust port may be provided on the outside of the chamber (10). In addition, the exhaust pipe may be connected to an exhaust device (not shown).

[0039] Meanwhile, a substrate (S) provided into the chamber (10) for a substrate processing process, such as an oxide film removal process, can be placed on the substrate support (30). Here, the substrate (S) may be a substrate without a thin film formed thereon, or a substrate with a predetermined thin film formed thereon. Furthermore, it is obvious that a trench may be formed by being recessed to a predetermined depth on the substrate (S), or a structure such as wiring may be formed thereon. At this time, a natural oxide film may be formed on the substrate. Such a natural oxide film may be formed, for example, by the substrate (S) being exposed to the atmosphere. When the substrate (S) with the natural oxide film formed thereon is introduced into the process space of the chamber (10), the introduced substrate (S) is placed on the substrate support (30). At this time, the substrate support member (30) may be provided, for example, with an electrostatic chuck, so that the substrate (S) can be seated and supported, and the substrate (S) may be maintained by electrostatic force, or the substrate (S) may be supported by vacuum suction or mechanical force.

[0040] The substrate support member (30) may be provided in a shape corresponding to the shape of the substrate (S), for example, a circular or square shape. The substrate support member (30) may include a substrate support (32) on which the substrate (S) is placed, and an elevator (34) disposed below the substrate support (32) to move the substrate support (32) up and down. Here, the substrate support (32) may be manufactured to be larger than the substrate (S), and the elevator (34) is provided to support at least one area of ​​the substrate support (32), for example, the center, and when the substrate (S) is placed on the substrate support (32), the substrate support (32) can be moved to be close to the gas injection member (20).

[0041] Additionally, a first temperature controller (not shown) may be installed inside the substrate support (32). That is, the first temperature controller is provided inside the substrate support (32) to control the temperature of the substrate support (32). Here, the first temperature controller may include a cooling member for cooling the substrate support (32). Such a cooling member may be formed as a cooling line that circulates a cooling fluid inside the substrate support (32). The substrate support (32) may be maintained at a first temperature by the first temperature controller, wherein the first temperature may have a value of 10 to 30°C.

[0042] A gas injection unit (20) is provided on the upper side inside the chamber (10) to inject process gas toward a substrate. A predetermined space is provided inside the gas injection unit (20), the upper side is connected to a gas supply unit (40), and a plurality of injection holes are formed on the lower side to inject process gas onto the substrate (S). The gas injection unit (20) can be manufactured in a shape corresponding to the shape of the substrate (S), and can be manufactured in a roughly circular or square shape. Here, the gas injection unit (20) can be provided at a predetermined distance from the side wall and cover (14) of the chamber (10).

[0043] Here, a second temperature controller (not shown) may be installed inside the gas injection unit (20). That is, the second temperature controller is provided inside the gas injection unit (20) to control the temperature of the gas injection unit (20). Here, the second temperature controller may include a heating element for heating the gas injection unit (20). Such a heating element may be formed as a sheath heater having a heating wire, and of course, it may also have other heating methods. By the second temperature controller, the gas injection unit (20) may be maintained at a second temperature higher than the first temperature described above, and at this time, the second temperature may have a value of 200 to 300°C.

[0044] A gas supply unit (40) is provided such that one end is connected to the gas injection unit (20) and the other end extends outside the chamber (10). Such a gas supply unit (40) may include a gas pipe formed such that one end is connected to the gas injection unit (20) and the other end extends outside the chamber (10) in order to supply process gas to the gas injection unit (20). Additionally, the gas supply unit (40) may be connected to the chamber (10) between the one end and the other end. That is, the gas supply unit (40) may be connected to the chamber (10) between the one end and the other end, wherein the location where the gas supply unit (40) is connected to the chamber (10) may be a location where the gas supply unit (40) penetrates the cover (14) of the chamber (10). For example, the location where the gas supply unit (40) is connected to the chamber (10) may be a location where a plane including the upper surface of the cover (14) intersects the gas supply unit (40).

[0045] The remote plasma generator (50) may be installed on the gas supply unit (40) outside the chamber (10) and may have a structure that partially surrounds the gas supply unit (40). Here, among the areas of the gas supply unit (40) that are not surrounded by the remote plasma generator (50), the area of ​​the gas supply unit (40) that moves the gas into the interior of the remote plasma generator (50) before the gas passes through the remote plasma generator (50) may form the front end of the remote plasma generator (50). That is, the area of ​​the gas supply unit (40) exposed to the upper side of the remote plasma generator (50) in FIG. 1 may form the front end of the remote plasma generator (50). Additionally, among the regions of the gas supply unit (40) that are not enclosed by the remote plasma generation unit (50), the region of the gas supply unit (40) that moves the gas into the chamber (10) after passing through the remote plasma generation unit (50) can form the front end of the remote plasma generation unit (50). That is, the region of the gas supply unit (40) exposed to the lower side of the remote plasma generation unit (50) in FIG. 1 can form the rear end of the remote plasma generation unit (50).

[0046] In the internal space of the gas supply unit (40) enclosed by the remote plasma generator (50), the process gas is activated, and the activated process gas is supplied to the gas injection unit (20). The activated process gas supplied to the gas injection unit (20) is injected through the injection hole and supplied onto the substrate (S).

[0047] The remote plasma generator (50) may receive microwaves to generate plasma within the gas supply unit (40), or may have a structure that partially surrounds the gas supply unit (40) with an antenna to which RF power is applied. When using an antenna as the remote plasma generator (50), the antenna may be provided on the outside of the gas supply unit (40) to surround, for example, the upper part of the internal space of the gas supply unit (40) which extends vertically. Such an antenna may generate plasma in the upper part of the internal space using an inductively coupled plasma (ICP) method by receiving power from an RF power source. At this time, one end of the antenna may be connected to the RF power source, and the other end may be grounded.

[0048] A plurality of gas inlet pipes are installed in the gas supply unit (40), and process gas supplied through the gas inlet pipes flows into the internal space of the gas supply unit (40). For example, a first gas inlet pipe (42), a second gas inlet pipe (44), and a third gas inlet pipe (46) may be installed in the gas supply unit (40).

[0049] The first gas inlet pipe (42) may be installed, for example, at the other end of the gas supply unit (40) to supply process gas to the internal space of the gas supply unit (40). Here, the process gas supplied from the first gas inlet pipe (42) may be a nitrogen-containing gas, and such nitrogen-containing gas may include at least one of N2 gas and NH3 gas. The first gas inlet pipe (42) is positioned above the remote plasma generator (50), so that the nitrogen-containing gas supplied from the first gas inlet pipe (42) passes through the remote plasma generator (50) and is activated in the internal space of the gas supply unit (40) enclosed by the remote plasma generator (50), and the activated nitrogen-containing gas passes through the gas supply unit (40) exposed to the rear end of the remote plasma generator (50), that is, the lower side of the remote plasma generator (50), and is supplied to the process space within the chamber (10).

[0050] The second gas inlet pipe (44) is installed on the side of the gas supply unit (40) between the location where the first gas inlet pipe (42) is installed at the supply location of the nitrogen-containing gas, that is, the gas supply unit (40), and one end of the gas supply unit (40), so as to supply process gas to the internal space of the gas supply unit (40). Here, the second gas inlet pipe (44) is connected between the location where the nitrogen-containing gas is supplied to the gas supply unit (40) and the location where the gas supply unit (40) is connected to the chamber (10), so as to supply process gas into the chamber (10).

[0051] Here, the process gas supplied from the second gas supply pipe (44) may be a hydrogen-containing gas, and such a hydrogen-containing gas may include H2 gas. Here, the second gas inlet pipe (44) is positioned at the bottom of the remote plasma generator (50) to supply hydrogen-containing gas to the internal space of the gas supply unit (40). That is, the second gas inlet pipe (44) can supply hydrogen-containing gas to the bottom of the internal space of the gas supply unit (40), and thereby the second gas inlet pipe (44) can supply hydrogen-containing gas to the path through which nitrogen-containing gas activated by the remote plasma generator (50) moves into the process space within the chamber (10).

[0052] The third gas inlet pipe (46) is installed on the side of the gas supply unit (40) between the location where the second gas inlet pipe (44) is installed at the gas supply unit (40), that is, the location where the second gas inlet pipe (44) is installed at the gas supply unit (40), and one end of the gas supply unit (40), so as to supply process gas to the internal space of the gas supply unit (40). Here, the third gas inlet pipe (46) is connected between the location where the hydrogen-containing gas is supplied to the gas supply unit (40) and the location where the gas supply unit (40) is connected to the chamber (10), so as to supply process gas into the chamber (10).

[0053] At this time, the process gas supplied from the third gas inlet pipe (46) may be a fluorine-containing gas, and such a fluorine-containing gas may include at least one of F2 gas, HF gas, and NF3 gas. Here, the third gas inlet pipe (46) is positioned below the second gas inlet pipe (44) to supply the fluorine-containing gas to the internal space of the gas supply unit (40). That is, the third gas inlet pipe (46) can supply the fluorine-containing gas to the lowest side of the internal space of the gas supply unit (40), and thereby the third gas inlet pipe (46) can supply the fluorine-containing gas to the path through which the nitrogen-containing gas supplied through the first gas inlet pipe (42) and the hydrogen-containing gas supplied through the second gas inlet pipe (44) move into the process space within the chamber (10).

[0054] Here, the distance (d1) between the location where the remote plasma generator (50) is installed and the location where hydrogen-containing gas is supplied to the gas supply unit (40) may be shorter than the distance (d2) between the location where hydrogen-containing gas is supplied to the gas supply unit (40) and the location where fluorine-containing gas is supplied to the gas supply unit (40). That is, the distance (d1) between the bottom of the remote plasma generator (50) and the connection location of the second gas inlet pipe (44) on the extended path of the gas supply unit (40) as shown in FIG. 1 may be shorter than the distance (d2) between the connection location of the second gas inlet pipe (44) and the connection location of the third gas inlet pipe (46).

[0055] Additionally, the distance (d3) between the location where the gas supply unit (40) is connected to the chamber (10) and the location where fluorine-containing gas is supplied to the gas supply unit (40) may be shorter than the distance (d2) between the location where hydrogen-containing gas is supplied to the gas supply unit (40) and the location where fluorine-containing gas is supplied to the gas supply unit (40). That is, the distance (d3) between the upper surface of the cover (14) and the connection location of the third gas inlet pipe (46) on the extended path of the gas supply unit (40) as shown in FIG. 1 may be shorter than the distance (d2) between the connection location of the second gas inlet pipe (44) and the connection location of the third gas inlet pipe (46).

[0056] In this way, by connecting the second gas inlet pipe (44) and the third gas inlet pipe (46) to the extended path of the gas supply unit (40), the hydrogen-containing gas supplied to the internal space of the gas supply unit (40) can be mixed with the activated nitrogen-containing gas to activate at least a portion of it, while simultaneously minimizing the amount of fluorine-containing gas that is activated. Detailed information regarding this will be described later in relation to the substrate processing method.

[0057] A control unit (not shown) can control the substrate support (30) to a first temperature and the gas injection unit (20) to a second temperature higher than the first temperature, and can move the substrate support (30) toward the gas injection unit (20) so that the substrate placed on the substrate support (30) is heat-treated. That is, the control unit can control the substrate support (30) to a temperature of 10 to 30°C and the gas injection unit (20) to a temperature of 200 to 300°C. Here, while process gas is supplied from the gas injection unit (20), the control unit positions the substrate support (30) at a relatively far distance from the gas injection unit (20) so that the natural oxide film formed on the substrate can react with the nitrogen component, hydrogen component, and fluorine component contained in the process gas. In addition, after the supply of process gas from the gas injection unit (20) is completed, the control unit positions the substrate support unit (30) at a relatively close distance from the gas injection unit (20) so that the natural oxide film reacts with the nitrogen component, hydrogen component, and fluorine component to create a reaction product, thereby allowing the substrate (S) to be heat-treated. The specific operation of the control unit will be described together with the substrate treatment method described below.

[0059] Hereinafter, the substrate processing method of the present invention will be described in detail with reference to FIGS. 2 and FIGS. 3. In describing the substrate processing method according to an embodiment of the present invention, descriptions that overlap with the description of the substrate processing apparatus described above will be omitted.

[0060] FIG. 2 is a drawing showing the supply of process gas according to a substrate processing method according to an embodiment of the present invention, and FIG. 3 is a drawing showing the heat treatment of a substrate according to a substrate processing method according to an embodiment of the present invention.

[0061] Referring to FIGS. 2 and 3, a substrate processing method according to an embodiment of the present invention is a substrate processing method in which a substrate (S) is processed by a substrate support member (30) having a first temperature controller provided therein and a gas injection member (20) having a second temperature controller provided therein disposed opposite to the substrate support member (30). The method comprises the steps of: placing a substrate (S) on the substrate support member (30) which is controlled to a first temperature; injecting a process gas containing an activated nitrogen-containing gas, an activated hydrogen-containing gas, and a fluorine-containing gas onto the substrate (S) through the gas injection member (20); moving the substrate support member (30) toward the gas injection member (20); and heat-treating the substrate (S) with heat emitted from the gas injection member (20) which is controlled to a second temperature.

[0062] Meanwhile, a substrate processing method according to an embodiment of the present invention is a substrate processing method for processing a substrate (S) using a substrate processing device comprising a remote plasma generating unit (50), a substrate support unit (30) having a cooling member provided inside, and a gas injection unit (20) disposed opposite to the substrate support unit (30) having a heating member provided inside, wherein the method comprises the steps of: placing the substrate (S) on the substrate support unit (30) which is controlled to a first temperature by the cooling member; supplying a nitrogen-containing gas to the front end of the remote plasma generating unit (50) to supply the activated nitrogen-containing gas to the gas injection unit (20); supplying a hydrogen-containing gas to the rear end of the remote plasma generating unit (50) to supply the activated hydrogen-containing gas to the gas injection unit (20); supplying a fluorine-containing gas to the gas injection unit (20); moving the substrate support unit (30) toward the gas injection unit (20); and the gas which is controlled to a second temperature by the heating member. The method may include a step of heat-treating the substrate (S) with heat emitted from the injection unit (20).

[0063] More specifically, a substrate processing method according to an embodiment of the present invention comprises the steps of: placing a substrate (S) on a substrate support member (30) controlled to a first temperature; supplying a nitrogen-containing gas to a gas supply member (40) having one end connected to a gas injection member (20) positioned opposite to the substrate support member (30); supplying a hydrogen-containing gas to the gas supply member (40) at a position between the supply location of the nitrogen-containing gas and one end of the gas supply member (40); supplying a fluorine-containing gas to the gas supply member (40) at a position between the supply location of the hydrogen-containing gas and one end of the gas supply member (40); supplying a process gas comprising the nitrogen-containing gas, the hydrogen-containing gas, and the fluorine-containing gas onto the substrate (S) through a gas injection member (20) controlled to a second temperature higher than the first temperature; moving the substrate support member (30) toward the gas injection member (20); and using the heat emitted from the gas injection member (20) to... It may include a step of heat treating the substrate (S).

[0064] Here, the substrate processing method according to an embodiment of the present invention is a substrate processing method for processing a substrate (S) introduced into a chamber (10), and may be a method for removing an oxide film formed on the substrate (S), that is, a natural oxide film formed when the substrate is exposed to the atmosphere.

[0065] Here, the introduction of the substrate (S) can be achieved by introducing the substrate (S) into the process space of the chamber (10). The substrate (S) introduced into the process space can be placed on the substrate support (30), and a first temperature controller (not shown) is installed on the substrate support (30) for the substrate (S) to be placed on, so that the substrate support (30), for example, the substrate support (32), can maintain a first temperature before the substrate (S) is placed by controlling the first temperature controller. Here, the first temperature can have a value within the range of 10 to 30°C, and by placing the substrate (S) on the substrate support (30) which is maintained at the first temperature in this way, the substrate (S) can be cooled to a temperature of 10 to 30°C on the substrate support (30). Meanwhile, as previously mentioned, the substrate support member (20) may be provided with, for example, an electrostatic chuck to allow the substrate (S) to be seated and supported, and may hold the substrate (S) by electrostatic force, or may support the substrate (S) by vacuum suction or mechanical force.

[0066] The step of supplying nitrogen-containing gas involves supplying nitrogen-containing gas to a gas supply unit (40) that extends outside the chamber (10). At this time, a remote plasma generator (50) may be installed outside the gas supply unit (40), and the nitrogen-containing gas supplied to the gas supply unit (40) may be activated within the gas supply unit (40) by the remote plasma generator (50).

[0067] For example, the step of supplying nitrogen-containing gas may be performed by supplying nitrogen-containing gas to the internal space of the gas supply unit (40) from a first gas inlet pipe (42) installed at the other end of the gas supply unit (40). At this time, the nitrogen-containing gas may include at least one of N2 gas and NH3 gas. In addition, the step of supplying nitrogen-containing gas may, of course, simultaneously supply an inert gas such as argon (Ar) along with the nitrogen-containing gas, in addition to the nitrogen-containing gas.

[0068] After the step of supplying the nitrogen-containing gas, a step of activating the nitrogen-containing gas may be performed. Here, the step of activating the nitrogen-containing gas may activate the nitrogen-containing gas in the internal space of the gas supply unit (40). As described above, a remote plasma generator (50) may be installed on the lower side of the first gas inlet pipe (42) to partially surround the gas supply unit (40) that extends vertically. Accordingly, the nitrogen-containing gas supplied from the upper part of the gas supply unit (40) through the first gas inlet pipe (42) is activated in the upper part of the internal space of the gas supply unit (40) surrounded by the remote plasma generator (50) to generate plasma. Accordingly, for example, N2 gas can be activated into ions or radicals such as N, N2, etc. in the upper part of the internal space, and NH3 gas can be activated into ions or radicals such as N, H, NH, NH2, NH3, etc. in the upper part of the internal space.

[0069] The step of supplying hydrogen-containing gas involves supplying hydrogen-containing gas to the internal space of the gas supply unit (40). That is, the step of supplying hydrogen-containing gas may supply process gas to the internal space of the gas supply unit (40) between the location where the first gas inlet pipe (42) is installed in the gas supply unit (40) and one end of the gas supply unit (40). That is, the step of supplying hydrogen-containing gas is accomplished by supplying hydrogen-containing gas to the internal space of the gas supply unit (40) from the second gas inlet pipe (44) installed on the side of the gas supply unit (40). Here, the hydrogen-containing gas may include H2 gas.

[0070] As described above, the second gas inlet pipe (44) is positioned at the bottom of the remote plasma generator (50) and can supply hydrogen-containing gas to the bottom of the internal space of the gas supply unit (40) enclosed by the remote plasma generator (50). That is, the step of supplying hydrogen-containing gas can supply the hydrogen-containing gas along the path through which the activated nitrogen-containing gas moves into the chamber (10). Accordingly, the hydrogen-containing gas supplied to the internal space during the step of supplying hydrogen-containing gas can be mixed with the activated nitrogen-containing gas along the path through which the activated nitrogen-containing gas moves into the chamber (10), and at least a portion of it can be activated. That is, at least a portion of the H2 gas can be activated into ions or radicals such as H and H2 by the activated nitrogen-containing gas, and the hydrogen-containing gas thus activated can react with the already activated nitrogen-containing gas to form various NH bonds.

[0071] The step of supplying fluorine-containing gas involves supplying fluorine-containing gas to the internal space of the gas supply unit (40). That is, the step of supplying fluorine-containing gas may supply process gas to the internal space of the gas supply unit (40) between the location where the second gas inlet pipe (44) is installed in the gas supply unit (40) and one end of the gas supply unit (40). That is, the step of supplying fluorine-containing gas is accomplished by supplying fluorine-containing gas to the internal space of the gas supply unit (40) from the third gas inlet pipe (46) installed on the side of the gas supply unit (40). Here, the fluorine-containing gas may include at least one of F2 gas, HF gas, and NF3 gas.

[0072] As described above, the third gas inlet pipe (46) is positioned below the second gas inlet pipe (44) to supply fluorine-containing gas to the internal space of the gas supply unit (40). That is, the step of supplying fluorine-containing gas may supply the fluorine-containing gas along the path where the nitrogen-containing gas and the hydrogen-containing gas move into the chamber (10). Here, in the step of supplying fluorine-containing gas, the fluorine-containing gas may not be activated, or the amount of activation may be kept to a minimum. That is, although the fluorine-containing gas supplied to the internal space of the gas supply unit (40) may be partially activated along the path where at least a portion of the activated hydrogen-containing gas moves into the chamber (10), the activation of the fluorine-containing gas can be prevented as much as possible by positioning the connection location of the third gas inlet pipe (46) as close as possible to the upper surface of the chamber (10), that is, the location where the gas supply unit (40) is connected to the chamber (10). This is intended to minimize the problem of etching not only the natural oxide film but also the substrate (S) and the pre-formed pattern on the substrate (S) when the amount of fluorine-containing gas activated increases.

[0073] When a fluorine-containing gas is activated, at least a portion of the F2 gas is activated into ions or radicals such as F, F2, etc. by a hydrogen-containing gas that is partially activated, at least a portion of the HF gas is activated into ions or radicals such as H, HF, etc. by a hydrogen-containing gas that is partially activated, and at least a portion of the NF3 gas can be activated into ions or radicals such as N, F, NF, NF2, NF3, etc. by a hydrogen-containing gas that is partially activated. The fluorine-containing gas activated in this way can react with at least one of the already activated nitrogen-containing gas and hydrogen-containing gas to form various bonds.

[0074] The step of supplying process gas is provided within the chamber (10), and process gas containing nitrogen-containing gas, hydrogen-containing gas, and fluorine-containing gas is supplied onto the substrate (S) through a gas injection unit (20) controlled to a second temperature higher than the first temperature. Since the internal space of the gas supply unit (40) and the internal space of the gas injection unit (20) are connected, the process gas activated in the internal space of the gas supply unit (40) is supplied to the gas injection unit (20) and injected through the injection hole to be supplied onto the substrate (S).

[0075] Here, the step of supplying process gas can supply process gas onto a substrate (S) while the substrate support (30) and the gas injection unit (20) are positioned so that they have a gap of D1. That is, the step of supplying process gas can be performed by a control unit controlling the substrate support (30) so that the process gas is supplied onto the substrate (S) while the substrate support (30) and the gas injection unit (20) are positioned so that they have a gap of D1. In the step of supplying process gas, the gap D1 between the substrate support (30) and the gas injection unit (20) can have a value of 50 to 100 mm.

[0076] Here, the step of supplying process gas can be performed while maintaining the gas injection unit (20) at a second temperature. As described above, a second temperature controller (not shown) may be installed inside the gas injection unit (20). Accordingly, the gas injection unit (20) may maintain the second temperature by controlling the second temperature controller before the process gas passing through the gas supply unit (40) moves to the gas injection unit (20). Here, the second temperature may have a value within the range of 200 to 300°C, and by injecting the process gas through the gas injection unit (20) maintained at the second temperature in this way, the process gas can be supplied onto the substrate in a thermally activated state.

[0077] At this time, the step of supplying process gas may simultaneously supply activated nitrogen-containing gas, hydrogen-containing gas, and fluorine-containing gas onto the substrate (S). Here, it is understood that the activated nitrogen-containing gas, hydrogen-containing gas, and fluorine-containing gas are not supplied in a separated state, but rather at least a portion of them may react with each other, and the reacted gas may be supplied onto the substrate (S). Additionally, the step of supplying process gas may supply the fluorine-containing gas onto the substrate (S) after supplying the activated nitrogen-containing gas and hydrogen-containing gas onto the substrate (S).

[0078] In this way, when activated nitrogen-containing gas, hydrogen-containing gas, and fluorine-containing gas are supplied onto the substrate (S), the process gas reacts with the oxide film formed on the substrate (S) according to the following reaction equation to form a reaction product.

[0079] [Reaction Equation]

[0080] 4HF + 2NH4F + SiO2→ (NH4)2SiF6+ 2H2O

[0081] That is, the activated nitrogen-containing gas, hydrogen-containing gas, and fluorine-containing gas react with each other to produce HF gas and NH4F gas, and the produced HF gas and NH4F gas react with the natural oxide film (SiO2) formed on the substrate (S) to form a reaction product ((NH4)2SiF6). At this time, water vapor (H2O) and unreacted residual gas produced by the reaction between the gas supplied on the substrate (S) and the natural oxide film can be discharged to the outside of the chamber (10) by means of an exhaust means.

[0082] The step of moving the substrate support (30) involves moving the substrate support (30) toward the gas injection unit (20) while maintaining the substrate support (30) at a first temperature. That is, the step of moving the substrate support (30) involves the control unit controlling the substrate support (30) so that the substrate support (30) and the gas injection unit (20) have a gap of D2, thereby raising the substrate support (30) toward the gas injection unit (20). Here, the gap D2 between the substrate support (30) and the gas injection unit (20) can have a value of 5 to 20 mm.

[0083] In the step of heat treating the substrate, the substrate is heat treated with heat emitted from the gas injection unit (20). In the step of moving the substrate support unit (30), when the substrate support unit (30) is moved to an adjacent position having a distance of D2 from the gas injection unit (20), the heat emitted from the gas injection unit (20) is transferred to the substrate placed on the substrate support unit (30). That is, since the gas injection unit (20) maintains a second temperature, for example, 200 to 300°C, the substrate (S) placed on the substrate support unit (30) can be heat treated by the heat emitted from the gas injection unit (20) heated to such a high temperature. In this way, in the step of heat-treating the substrate (S), the substrate (S) may be heated to a temperature of 100°C or higher, for example, a temperature of 100°C or higher and 200°C or lower, and as the substrate (S) is heated to a temperature of 100°C or higher, the reaction product generated from the natural oxide film may be sublimated and removed.

[0084] That is, in an embodiment of the present invention, in the step of supplying a process gas, a natural oxide film formed on a substrate (S) is reacted with a nitrogen component, a hydrogen component, and a fluorine component included in the process gas, and in the step of heat-treating the substrate (S), the reaction product generated by the reaction of the natural oxide film with the nitrogen component, the hydrogen component, and the fluorine component is sublimated. In this way, in an embodiment of the present invention, the natural oxide film is removed solely by its selectivity to the oxide film through a substitution reaction and a sublimation reaction by heat treatment, thereby resolving the problem of degrading the quality of the manufactured semiconductor device or display device, which occurs in the case of conventional wet or dry cleaning methods where not only the natural oxide film but also the pattern is etched.

[0085] Here, the step of heat treating the substrate can be performed with the supply of process gas from the gas injection unit (20) stopped. That is, the step of heat treating the substrate can be performed after stopping the supply of process gas from the gas injection unit (20) immediately before moving the substrate toward the gas injection unit, while moving the substrate toward the gas injection unit, or after moving the substrate toward the gas injection unit. At this time, the process gas that is stopped from supplying from the gas injection unit (20) may be a process gas containing nitrogen-containing gas, hydrogen-containing gas, and fluorine-containing gas, and as described above, if an inert gas is supplied along with nitrogen-containing gas from the first gas inlet pipe (42), the supply of the inert gas may be maintained even during the step of heat treating the substrate.

[0086] Thus, according to the substrate processing method of an embodiment of the present invention, by supplying a process gas onto a substrate while the substrate is placed on a substrate support maintained at a low temperature, the process gas can be stably adsorbed onto the natural oxide film formed on the substrate to form a reaction product.

[0087] In addition, by moving the substrate support and heat-treating the substrate, the reaction product formed on the substrate can be effectively sublimated while maintaining the temperature of the substrate support, which requires a long time to change temperature.

[0088] In addition, by supplying activated nitrogen-containing gas, hydrogen-containing gas, and fluorine-containing gas from a remote plasma generator located outside the chamber onto the substrate, a process gas capable of reacting with the natural oxide film formed on the substrate can be generated, thereby effectively removing the natural oxide film formed on the substrate.

[0090] In the foregoing, preferred embodiments of the present invention have been described and illustrated using specific terms, but such terms are intended solely to clarify the present invention, and it is obvious that various modifications and changes may be made to the embodiments and described terms of the present invention without departing from the technical spirit and scope of the following claims. Such modified embodiments should not be understood separately from the spirit and scope of the present invention, but should be considered to fall within the scope of the claims of the present invention. Explanation of the symbols

[0092] 10: Chamber 12: Body 14: Cover 20: Gas injection part 30: Substrate support 32: Substrate support 34: Elevator 40: Gas supply unit 42: 1st gas inlet pipe 44: 2nd gas inlet pipe 46: Third gas inlet pipe 50: Remote plasma generator

Claims

Claim 1 delete Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 delete Claim 11 delete Claim 12 A substrate processing apparatus comprising: a chamber; a gas supply unit connected to the chamber and extending to the outside of the chamber; a remote plasma generator installed in the gas supply unit outside the chamber; a first gas inlet pipe for supplying a nitrogen-containing gas into the chamber via the remote plasma generator; a second gas inlet pipe connected between a location where the nitrogen-containing gas is supplied to the gas supply unit and a location where the gas supply unit is connected to the chamber, for supplying a hydrogen-containing gas into the chamber; and a third gas inlet pipe connected between a location where the hydrogen-containing gas is supplied to the gas supply unit and a location where the gas supply unit is connected to the chamber, for supplying a fluorine-containing gas into the chamber; wherein the distance between the location where the remote plasma generator is installed and the location where the hydrogen-containing gas is supplied to the gas supply unit is shorter than the distance between the location where the hydrogen-containing gas is supplied to the gas supply unit and the location where the fluorine-containing gas is supplied to the gas supply unit. Claim 13 delete Claim 14 A substrate processing apparatus comprising: a chamber; a gas supply unit connected to the chamber and extending to the outside of the chamber; a remote plasma generator installed in the gas supply unit outside the chamber; a first gas inlet pipe for supplying a nitrogen-containing gas into the chamber via the remote plasma generator; a second gas inlet pipe connected between a location where the nitrogen-containing gas is supplied to the gas supply unit and a location where the gas supply unit is connected to the chamber, for supplying a hydrogen-containing gas into the chamber; and a third gas inlet pipe connected between a location where the hydrogen-containing gas is supplied to the gas supply unit and a location where the gas supply unit is connected to the chamber, for supplying a fluorine-containing gas into the chamber; wherein the distance between the location where the gas supply unit is connected to the chamber and the location where the fluorine-containing gas is supplied to the gas supply unit is shorter than the distance between the location where the hydrogen-containing gas is supplied to the gas supply unit and the location where the fluorine-containing gas is supplied to the gas supply unit. Claim 15 A substrate processing apparatus according to claim 12 or 14, wherein the nitrogen-containing gas and hydrogen-containing gas supplied to the gas supply unit are activated and supplied into the chamber.

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