Display devices, display modules, and electronic devices

Abstract

A display device having a light detection function is provided. The display device has a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light receiving device, a first transistor, and a second transistor, and the second pixel circuit has a light emitting device, the light receiving device has a first pixel electrode, an active layer, and a common electrode, and the light emitting device has a second pixel electrode, a light emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion that overlaps with the first pixel electrode via the active layer and a portion that overlaps with the second pixel electrode via the light emitting layer, the first transistor has low-temperature polysilicon in the semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer.

Description

Technology Field

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device. One embodiment of the present invention relates to a display device having a light receiving device (also called a light receiving element) and a light emitting device (also called a light emitting element).

[0002] Furthermore, one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, capacitor devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), methods for driving the same, or methods for manufacturing the same. Background Technology

[0003] In recent years, display devices are expected to be applied to a wide variety of uses. For example, applications for large display devices include home television systems (also known as televisions or television receivers), digital signage, and Public Information Displays (PID). Furthermore, as portable information terminals, the development of smartphones and tablet devices equipped with touch panels is underway.

[0004] As a display device, for example, a light-emitting device having a light-emitting device is being developed. A light-emitting device (also referred to as an EL device or EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon is applied to display devices, having features such as being easy to make thin and lightweight, capable of high-speed response to input signals, and capable of driving using a DC low-voltage power supply. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL device (also referred to as an organic EL element) is applied. Prior art literature

[0005] Japanese Patent Publication No. JP 2014-197522 The problem to be solved

[0006] One embodiment of the present invention has as its objective to provide a display device having a light detection function. One embodiment of the present invention has as its objective to provide a display device with high convenience. One embodiment of the present invention has as its objective to provide a multi-functional display device. One embodiment of the present invention has as its objective to provide a display device with high display quality. One embodiment of the present invention has as its objective to provide a display device with high light detection sensitivity. One embodiment of the present invention has as its objective to simplify a circuit (also referred to as an external circuit) mounted on the outside of the display device. One embodiment of the present invention has as its objective to provide a novel display device.

[0007] Furthermore, the description of these problems does not preclude the existence of other problems. One embodiment of the present invention is not required to solve all of these problems. Problems other than these can be derived from the description in the specification, drawings, and claims. means of solving the problem

[0008] One embodiment of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light receiving device, a first transistor, and a second transistor, the second pixel circuit has a light emitting device, the light receiving device has a first pixel electrode, an active layer, and a common electrode, the light emitting device has a second pixel electrode, a light emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion that overlaps with the first pixel electrode via the active layer and a portion that overlaps with the second pixel electrode via the light emitting layer, the first transistor has low-temperature polysilicon in the semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer.

[0009] One embodiment of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light receiving device, a first transistor, and a second transistor, and the second pixel circuit has a light emitting device, the light receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, and the light emitting device has a second pixel electrode, a common layer, a light emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion that overlaps with the first pixel electrode via the active layer and a portion that overlaps with the second pixel electrode via the light emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion that overlaps with the active layer and a portion that overlaps with the light emitting layer, the first transistor has low-temperature polysilicon in the semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer.

[0010] It is preferable that the common layer has a layer that functions as a hole injection layer of the light-emitting device.

[0011] It is desirable for the common layer to have a layer that functions as a hole transport layer of the light-emitting device.

[0012] It is desirable for the common layer to have a layer that functions as an electron transport layer of the light-emitting device.

[0013] It is desirable for the common layer to have a layer that functions as an electron injection layer of a light-emitting device.

[0014] It is preferable that the second pixel circuit further comprises a third transistor having low-temperature polysilicon in the semiconductor layer. Alternatively, it is preferable that the second pixel circuit further comprises a third transistor having a metal oxide in the semiconductor layer.

[0015] A display device of one embodiment of the present invention preferably further comprises a resin layer, a light-shielding layer, and a substrate. The resin layer and the light-shielding layer are preferably located between a common electrode and a substrate, respectively.

[0016] It is preferable that the resin layer has an opening that overlaps with the light-receiving device. It is preferable that the resin layer has a portion that overlaps with the light-emitting device. It is preferable that the light-shielding layer has a portion located between the common electrode and the resin layer. It is preferable that the light-shielding layer covers at least a portion of the opening and at least a portion of the side of the resin layer exposed at the opening.

[0017] Alternatively, the resin layer is provided in an island shape and preferably has a portion that overlaps with the light-emitting device. The light-shielding layer preferably has a portion located between the common electrode and the resin layer. It is preferable that at least a portion of the light passing through the substrate is incident on the light-receiving device without passing through the resin layer. It is preferable that the light-shielding layer covers at least a portion of the side of the resin layer.

[0018] A display device of one embodiment of the present invention preferably further comprises an adhesive layer. The adhesive layer is preferably located between a common electrode and a substrate. The resin layer and the light-shielding layer are preferably located between the adhesive layer and the substrate, respectively. The adhesive layer preferably has a first portion that overlaps with a light-receiving device and a second portion that overlaps with a light-emitting device. The first portion is preferably thicker than the second portion.

[0019] One form of the display device of the present invention preferably has flexibility.

[0020] One embodiment of the present invention is a module having a display device having any of the above-described configurations, provided with a connector such as a flexible printed circuit board (hereinafter referred to as FPC) or a tape carrier package (TCP), or a module having an integrated circuit (IC) mounted by a chip on glass (COG) method or a chip on film (COF) method.

[0021] One embodiment of the present invention is an electronic device having at least one of the above module, an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button. Effects of the invention

[0022] According to one embodiment of the present invention, a display device having a light detection function can be provided. According to one embodiment of the present invention, a display device with high convenience can be provided. According to one embodiment of the present invention, a multi-functional display device can be provided. According to one embodiment of the present invention, a display device with high display quality can be provided. According to one embodiment of the present invention, a display device with high light detection sensitivity can be provided. According to one embodiment of the present invention, the external circuit of the display device can be simplified. According to one embodiment of the present invention, a novel display device can be provided.

[0023] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment of the present invention is not necessarily required to have all of these effects. Effects other than these can be derived from the descriptions in the specification, drawings, and claims. Brief explanation of the drawing

[0024] Figures 1 (A) to (D) are cross-sectional views illustrating an example of a display device, and Figures 1 (E) to (I) are top views illustrating an example of a pixel. FIG. 2 is a cross-sectional view illustrating an example of a display device. Figure 3 (A) is a cross-sectional view illustrating an example of a display device, and Figures 3 (B) and (C) are drawings illustrating an example of an upper surface layout of a resin layer. Figures 4 (A) and (B) are cross-sectional views illustrating an example of a display device. Figures 5 (A) to (C) are cross-sectional views illustrating examples of display devices. Figures 6 (A) to (C) are cross-sectional views illustrating examples of display devices. Figure 7 (A) is a top view illustrating an example of a display device, and Figure 7 (B) is a cross-sectional view illustrating an example of a display device. Figures 8 (A) and (B) are cross-sectional views illustrating an example of a display device. Figure 9 (A) is a top view illustrating an example of a display device, and Figure 9 (B) is a cross-sectional view illustrating an example of a display device. Figure 10 (A) is a top view illustrating an example of a display device, and Figure 10 (B) is a cross-sectional view illustrating an example of a display device. Figures 11 (A) and (B) are cross-sectional views illustrating an example of a display device. Figures 12 (A) and (B) are cross-sectional views illustrating an example of a display device. FIG. 13 is a perspective view illustrating an example of a display device. FIG. 14 is a cross-sectional view illustrating an example of a display device. Figures 15 (A) and (B) are cross-sectional views illustrating an example of a display device. FIG. 16 is a cross-sectional view illustrating an example of a display device. Figure 17 (A) is a cross-sectional view illustrating an example of a display device, and Figure 17 (B) is a cross-sectional view illustrating an example of a transistor. Figures 18 (A) and (B) are circuit diagrams illustrating an example of a pixel circuit. Figures 19 (A) and (B) are cross-sectional views illustrating an example of a display device. Figures 20 (A) and (B) are drawings illustrating an example of an electronic device. Figures 21 (A) to (D) illustrate examples of electronic devices. Figures 22 (A) to (F) illustrate examples of electronic devices. Specific details for implementing the invention

[0025] Embodiments are described in detail using drawings. However, the present invention is not limited to the description below, and it is readily understood by those skilled in the art that various changes to the form and details can be made without departing from the spirit and scope of the invention. Accordingly, the present invention is not to be interpreted as being limited to the description of the embodiments shown below.

[0026] Furthermore, in the configuration of the invention described below, the same reference numerals are commonly used across different drawings for identical parts or parts having the same function, and repetitive descriptions thereof are omitted. Additionally, when referring to parts having the same function, the hatch pattern is identical, and in some cases, no specific reference numeral is assigned.

[0027] In addition, the actual location, size, and range of each component depicted in the drawings may not be shown to facilitate understanding. Therefore, the disclosed invention is not necessarily limited to the location, size, and range disclosed in the drawings.

[0028] In addition, the terms 'membrane' and 'layer' can be interchanged depending on the case or situation. For example, the term 'conductive layer' can be replaced with 'conductive film.' Or, for instance, the term 'insulating film' can be replaced with 'insulating layer.'

[0029] (Embodiment 1)

[0030] In this embodiment, a display device of one form of the present invention is described using FIGS. 1 to 17.

[0031] The display device of the present embodiment has a light receiving device and a light emitting device in the display portion. In the display device of the present embodiment, the light emitting device is arranged in a matrix in the display portion, and an image can be displayed in the display portion. Additionally, the light receiving device is arranged in a matrix in the display portion, and the display portion also functions as a light receiving portion. The light receiving portion can be used as an image sensor or a touch sensor. That is, by detecting light from the light receiving portion, an image can be captured, or proximity or contact of an object (such as a finger or pen) can be detected. Furthermore, the display device of the present embodiment can utilize the light emitting device as a light source for the sensor. Therefore, it is not necessary to provide a light receiving portion and a light source separately from the display device, and the number of components in the electronic device can be reduced.

[0032] In the display device of the present embodiment, when an object reflects the light emitted by the light-emitting device having a display part, the light-receiving device can detect the reflected light, so imaging or touch (including near touch) detection is possible even in dark places.

[0033] The display device of the present embodiment has the function of displaying an image using a light-emitting device. That is, the light-emitting device functions as a display device.

[0034] As a light-emitting device, it is preferable to use EL devices such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes). Examples of light-emitting materials for EL devices include materials that emit fluorescence (fluorescent materials), materials that emit phosphorescence (phosphorescent materials), inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence: TADF materials). In addition, LEDs such as micro LEDs (Light Emitting Diodes) may also be used as light-emitting devices.

[0035] The display device of the present embodiment has the function of detecting light using a light receiving device.

[0036] When a light-receiving device is used in an image sensor, the display device of the present embodiment can capture an image using the light-receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0037] For example, data such as fingerprints, palm prints, or irises can be acquired using an image sensor. That is, a biometric authentication sensor can be embedded in the display device of the present embodiment. By embedding the biometric authentication sensor in the display device, the number of electronic device components can be reduced compared to the case where the biometric authentication sensor is provided separately from the display device, thereby enabling miniaturization and weight reduction of the electronic device.

[0038] In addition, data such as the user's facial expressions, eye movements, or changes in pupil size can be acquired using an image sensor. By interpreting the data, physical and mental information of the user can be acquired. By changing the output content of one or both of the display and voice based on the information, it is possible to ensure that the user can safely use, for example, a VR (Virtual Reality) device, an AR (Augmented Reality) device, or an MR (Mixed Reality) device.

[0039] In addition, when a light receiving device is used in a touch sensor, the display device of the present embodiment can detect proximity or contact of an object using the light receiving device.

[0040] As a light-receiving device, for example, a pn-type or pin-type photodiode can be used. The light-receiving device functions as a photoelectric conversion device that detects light incident on it and generates an electric charge. The amount of charge generated is determined by the amount of incident light.

[0041] In particular, it is desirable to use an organic photodiode having a layer containing an organic compound as a light-receiving device. Organic photodiodes are easy to thin, lightweight, and large-area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0042] In one embodiment of the present invention, an organic EL device is used as a light-emitting device and an organic photodiode is used as a light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Accordingly, an organic photodiode can be embedded in a display device using an organic EL device.

[0043] If all layers constituting the organic EL device and the organic photodiode are to be formed separately, the number of film deposition processes increases significantly. Since the organic photodiode has many layers that can be formed in common with the organic EL device, the increase in film deposition processes can be suppressed by depositing the layers that can be formed in common collectively. In addition, even if the number of deposition cycles remains the same, by reducing the number of layers deposited on only some of the devices, it becomes possible to reduce the impact of misalignment of the film deposition pattern and the impact of dust (including small foreign matter called particles) attached to the film deposition mask (such as a metal mask). This allows for an increase in the manufacturing yield of the display device.

[0044] For example, one of the pair of electrodes (common electrode) can be made into a layer common to both the photoreceiving device and the light-emitting device. Additionally, it is preferable to make at least one of, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer into a layer common to both the photoreceiving device and the light-emitting device. Furthermore, for example, the active layer of the photoreceiving device and the light-emitting layer of the light-emitting device may be formed separately, while the remaining layers may have the same configuration in both the light-emitting device and the photoreceiving device. In this way, by having a layer common to both the photoreceiving device and the light-emitting device, the number of film deposition steps and the number of masks can be reduced, thereby reducing the manufacturing process and manufacturing cost of the display device.

[0045] In addition, a layer common to both the light-receiving device and the light-emitting device may have different functions in the light-receiving device and in the light-emitting device. In this specification, components are named based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Likewise, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device.

[0046] In one embodiment of the display device of the present invention, it is preferable to use a transistor (hereinafter also referred to as an OS transistor) having a metal oxide (also referred to as an oxide semiconductor) in a semiconductor layer where a channel is formed, in both the pixel circuit having a light-receiving device and the pixel circuit having a light-emitting device. Since the OS transistor has a very small off-current, it can maintain the charge accumulated in a capacitive element connected in series with said transistor over a long period of time. In addition, by using an OS transistor, the power consumption of the display device can be reduced.

[0047] Alternatively, in a display device of one embodiment of the present invention, it is preferable to use a transistor having silicon in a semiconductor layer in which channels are formed in both the pixel circuit having a light-receiving device and the transistor having a light-emitting device (hereinafter also referred to as a Si transistor). Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) in a semiconductor layer (hereinafter also referred to as an LTPS transistor). LTPS transistors have high field-effect mobility, enabling high-speed operation.

[0048] In addition, by using Si transistors such as LTPS transistors, it becomes easier to provide various circuits composed of CMOS circuits on the same substrate as the display unit. This allows for the simplification of external circuits mounted on the display device, thereby reducing component costs and mounting costs.

[0049] Alternatively, in a display device of one embodiment of the present invention, it is preferable to use two types of transistors in a pixel circuit having a light-receiving device. Specifically, it is preferable that the pixel circuit has an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer according to the function required of the transistor, the quality of the pixel circuit having a light-receiving device can be improved, and the precision of sensing or imaging can be improved. At this time, in the pixel circuit having a light-emitting device, either one of the OS transistor and the LTPS transistor may be used, or both may be used.

[0050] In addition, even when two types of transistors are used, using LTPS transistors makes it easier to provide various circuits composed of CMOS circuits on the same substrate as the display unit. This allows for the simplification of external circuits mounted on the display device, thereby reducing component costs and mounting costs.

[0051] In the display surface of a display device of one embodiment of the present invention, light emission from a light-emitting device is extracted, and light irradiated onto a light-receiving device passes through. It is preferable that the display device has a light-shielding layer on the display surface side rather than the light-emitting device and the light-receiving device. It is preferable that the light emission from the light-emitting device is extracted to the outside of the display device through an opening in the light-shielding layer (or an area where the light-shielding layer is not provided), and it is preferable that light is irradiated onto the light-receiving device through an opening in the light-shielding layer (or an area where the light-shielding layer is not provided).

[0052] A light-receiving device detects light emitted by a light-emitting device that is reflected by an object. However, there are cases where the light emitted by the light-emitting device is reflected within the display device and enters the light-receiving device without passing through the object. This stray light becomes noise during light detection and is a factor that degrades the signal-to-noise ratio (S / N ratio). By providing a light-blocking layer on the display surface side rather than the surface where the light-emitting and light-receiving devices are provided, the influence of stray light can be suppressed. This allows for noise reduction and increases the sensitivity of the sensor using the light-receiving device.

[0053] The closer the position of the light-blocking layer is to the light-emitting device, the more the stray light from the light-emitting device within the display device can be suppressed, thereby increasing the sensitivity of the sensor. Additionally, the closer the position of the light-blocking layer is to the light-emitting device, the more the decrease in contrast and change in chromaticity when the display device is observed from an oblique direction can be suppressed, thereby improving the viewing angle characteristics of the display. On the other hand, the farther the position of the light-blocking layer is from the light-receiving device, the narrower the imaging range area of ​​the light-receiving device can be, thereby increasing the imaging resolution.

[0054] Therefore, in one embodiment of the present invention, a structure (e.g., a resin layer) is provided on the surface forming the light-shielding layer so that there is a difference between the distance from the light-shielding layer to the light-receiving device and the distance from the light-shielding layer to the light-emitting device. By adjusting the layout and thickness of the structure, the distance from the light-shielding layer to the light-receiving device can be increased, and the distance from the light-shielding layer to the light-emitting device can be decreased. This allows for reducing sensor noise, increasing image resolution, and suppressing the dependence of the display on the viewing angle. Consequently, both the display quality and image quality of the display device can be improved.

[0055] Specifically, one embodiment of the display device of the present invention preferably further comprises a resin layer, a light-shielding layer, and a substrate. The resin layer and the light-shielding layer are preferably located between a common electrode and a substrate, respectively.

[0056] At least a portion of the light emitted by the light-emitting device is extracted to the outside of the substrate through the resin layer. At least a portion of the light passing through the substrate is incident on the light-receiving device without passing through the resin layer. For example, the resin layer has an opening that overlaps with the light-receiving device. Alternatively, the resin layer is provided in an island shape at a position that overlaps with the light-emitting device.

[0057] The resin layer is provided at a position overlapping with the light-emitting device, but is not provided at a position overlapping with the light-receiving device. Therefore, the distance from the light-blocking layer to the light-emitting device is shortened compared to the distance from the light-blocking layer to the light-receiving device. This allows for an improvement in both the display quality and the image quality of the display device.

[0058] Figures 1 (A) to (D) illustrate cross-sectional views of a display device of one embodiment of the present invention.

[0059] The display device (50A) shown in (A) of Fig. 1 has a layer (53) having a light receiving device and a layer (57) having a light emitting device between the substrate (51) and the substrate (59).

[0060] The display device (50B) shown in (B) of Fig. 1 has a layer (53) having a light receiving device, a layer (55) having a transistor, and a layer (57) having a light emitting device between the substrate (51) and the substrate (59).

[0061] The display device (50A) and the display device (50B) are configured such that red (R), green (G), and blue (B) light is emitted from a layer (57) having a light-emitting device.

[0062] A display device of one embodiment of the present invention has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting device. For example, a configuration having three subpixels (three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M), etc.) or a configuration having four subpixels (four colors of R, G, B, and white (W), or four colors of R, G, B, and Y, etc.) may be applied to the pixel. Additionally, the pixel has a light-receiving device. The light-receiving device may be provided to all pixels or to some pixels. Additionally, a single pixel may have a plurality of light-receiving devices.

[0063] The layer (55) having the transistor preferably has a first transistor and a second transistor. The first transistor is electrically connected to a light receiving device. The second transistor is electrically connected to a light emitting device.

[0064] A display device of one embodiment of the present invention may have a function to detect an object, such as a finger, that is in contact with the display device. For example, as shown in (C) of FIG. 1, a finger (52) in contact with the display device (50B) reflects light emitted by a light-emitting device in a layer (57) having a light-emitting device, and a light-receiving device in a layer (53) having a light-receiving device detects the reflected light. In this way, it is possible to detect that the finger (52) is in contact with the display device (50B).

[0065] As illustrated in (D) of FIG. 1, a display device of one form of the present invention may have the function of detecting or capturing an object that is close to (not in contact with) the display device (50B).

[0066] [Pixels]

[0067] An example of a pixel is shown in (E) to (I) of FIG. 1.

[0068] The pixels illustrated in FIGS. 1 (E) to (G) have three subpixels (three light-emitting devices) of R, G, and B, and a light-receiving device (PD). FIGS. 1 (E) illustrates an example in which three subpixels and a light-receiving device (PD) are arranged in a 2×2 matrix, and FIGS. 1 (F) illustrates an example in which three subpixels and a light-receiving device (PD) are arranged in a horizontal row. FIGS. 1 (G) illustrates an example in which three subpixels are arranged in a horizontal row and a light-receiving device (PD) is placed below them. Additionally, the pixels illustrated in FIGS. 1 (E) to (G) may each be composed of four subpixels, consisting of three subpixels used for display and one subpixel used for light detection.

[0069] The pixel shown in (H) of Fig. 1 has four subpixels (four light-emitting devices) of R, G, B, and W and a light-receiving device (PD).

[0070] The pixel illustrated in (I) of FIG. 1 has three subpixels of R, G, and B, an infrared light-emitting device (IR), and a light-receiving device (PD). In this case, it is preferable that the light-receiving device (PD) has the function of detecting infrared light. The light-receiving device (PD) may have the function of detecting both visible light and infrared light. Depending on the application of the sensor, the wavelength of light detected by the light-receiving device (PD) can be determined.

[0071] Hereinafter, the detailed configuration of the light-emitting device and the light-receiving device having one embodiment of the display device of the present invention will be described using FIGS. 2 to 12.

[0072] A display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to that of a substrate on which a light-emitting device is formed, a bottom emission type that emits light toward the side of the substrate on which a light-emitting device is formed, and a dual emission type that emits light toward both sides.

[0073] In FIGS. 2 to 12, a top emission type display device is described as an example.

[0074] In addition, although the present embodiment mainly describes a display device having a light-emitting device that emits visible light and a light-receiving device that detects visible light, the display device may further have a light-emitting device that emits infrared light. Furthermore, the light-receiving device may be configured to detect infrared light, or it may be configured to detect both visible light and infrared light.

[0075] [Display device (10)]

[0076] A cross-sectional view of the display device (10) is shown in FIG. 2.

[0077] The display device (10) has a light receiving device (110) and a light emitting device (190).

[0078] The light-emitting device (190) has a pixel electrode (191), a buffer layer (192), a light-emitting layer (193), a buffer layer (194), and a common electrode (115). The light-emitting layer (193) has an organic compound. The light-emitting device (190) has the function of emitting visible light. Additionally, the display device (10) may further have a light-emitting device having the function of emitting infrared light. In this embodiment, the case where the pixel electrode (191) functions as an anode and the common electrode (115) functions as a cathode is described as an example.

[0079] The light receiving device (110) has a pixel electrode (181), a buffer layer (182), an active layer (183), a buffer layer (184), and a common electrode (115). The active layer (183) has an organic compound. The light receiving device (110) has the function of detecting visible light. Additionally, the light receiving device (110) may have the additional function of detecting infrared light. In this embodiment, similar to the light emitting device (190), the pixel electrode (181) functions as an anode and the common electrode (115) functions as a cathode. That is, by driving the light receiving device (110) by applying a reverse bias between the pixel electrode (181) and the common electrode (115), the display device (10) can detect light incident on the light receiving device (110), generate a charge, and extract it as current.

[0080] The pixel electrode (181), pixel electrode (191), buffer layer (182), buffer layer (192), active layer (183), light-emitting layer (193), buffer layer (184), buffer layer (194), and common electrode (115) may each have a single-layer structure or a stacked structure.

[0081] The pixel electrode (181) and the pixel electrode (191) are positioned on the insulating layer (214). The pixel electrode (181) and the pixel electrode (191) can be formed from the same material and the same process. The ends of the pixel electrode (181) and the pixel electrode (191) are each covered by a partition (216). The pixel electrode (181) and the pixel electrode (191) are electrically insulated from each other by the partition (216) (also referred to as being electrically separated).

[0082] An organic insulating film is suitable as the barrier (216). Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The barrier (216) is a layer that transmits visible light. Although details will be described later, instead of the barrier (216), a barrier (217) that blocks visible light may be provided.

[0083] The buffer layer (182) is located on the pixel electrode (181). The active layer (183) overlaps with the pixel electrode (181) via the buffer layer (182). The buffer layer (184) is located on the active layer (183). The active layer (183) overlaps with the common electrode (115) via the buffer layer (184). The buffer layer (182) may have a hole transport layer. The buffer layer (184) may have an electron transport layer.

[0084] A buffer layer (192) is located on the pixel electrode (191). A light-emitting layer (193) overlaps with the pixel electrode (191) via the buffer layer (192). A buffer layer (194) is located on the light-emitting layer (193). The light-emitting layer (193) overlaps with the common electrode (115) via the buffer layer (194). The buffer layer (192) may have one or both of a hole injection layer and a hole transport layer. The buffer layer (194) may have one or both of an electron injection layer and an electron transport layer.

[0085] The common electrode (115) is a layer that is commonly used in the light receiving device (110) and the light emitting device (190).

[0086] The material and film thickness of a pair of electrodes of the light receiving device (110) and the light emitting device (190) can be made identical. This makes it possible to reduce the manufacturing cost of the display device and simplify the manufacturing process.

[0087] The display device (10) has a light receiving device (110), a light emitting device (190), a transistor (41), and a transistor (42), etc., between a pair of substrates (substrate (151) and substrate (152)).

[0088] The buffer layer (182), active layer (183), and buffer layer (184), which are respectively located between the pixel electrode (181) and the common electrode (115) in the light receiving device (110), may be described as organic layers (layers containing organic compounds). It is preferable that the pixel electrode (181) has the function of reflecting visible light. The common electrode (115) has the function of transmitting visible light. Additionally, if the light receiving device (110) is configured to detect infrared light, the common electrode (115) has the function of transmitting infrared light. Additionally, it is preferable that the pixel electrode (181) has the function of reflecting infrared light.

[0089] The light receiving device (110) has the function of detecting light. Specifically, the light receiving device (110) is a photoelectric conversion device that receives light (22) incident from outside the display device (10) and converts it into an electrical signal. The light (22) may be light reflected by an object from the light emitted by the light-emitting device (190). Additionally, the light (22) may be incident on the light receiving device (110) through a lens described later.

[0090] In the light-emitting device (190), the buffer layer (192), the light-emitting layer (193), and the buffer layer (194), which are respectively located between the pixel electrode (191) and the common electrode (115), may be referred to as EL layers. It is preferable that the pixel electrode (191) has the function of reflecting visible light. The common electrode (115) has the function of transmitting visible light. Additionally, if the display device (10) is configured to have a light-emitting device that emits infrared light, the common electrode (115) has the function of transmitting infrared light. Additionally, it is preferable that the pixel electrode (191) has the function of reflecting infrared light.

[0091] It is preferable that the light-emitting device of the display device of the present embodiment has a micro-optical resonator (microcavity) structure applied thereto. Accordingly, it is preferable that one of the pair of electrodes of the light-emitting device has an electrode having transmittance and reflectivity to visible light (semi-transmittance / semi-reflection electrode), and the other has an electrode having reflectivity to visible light (reflection electrode). By having a microcavity structure, the light emitted from the light-emitting layer is resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device.

[0092] In addition, the translucent / semireflective electrode may be formed as a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also referred to as a transparent electrode). In the present specification and other sources, the reflective electrode functioning as part of the translucent / semireflective electrode is described as a pixel electrode or a common electrode, and the transparent electrode is described as an optical adjustment layer; however, there are cases where the transparent electrode (optical adjustment layer) can also be described as having the function of a pixel electrode or a common electrode.

[0093] The light transmittance of the transparent electrode shall be 40% or higher. For example, in a light-emitting device, it is preferable to use an electrode having a transmittance of 40% or higher for visible light (light with a wavelength of 400 nm or more and less than 750 nm). In addition, the visible light reflectance of the semi-transparent and semi-reflective electrodes shall be 10% or higher and 95% or lower, preferably 30% or higher and 80% or lower. The visible light reflectance of the reflective electrode shall be 40% or higher and 100% or lower, preferably 70% or higher and 100% or lower. In addition, the resistivity of these electrodes shall be 1×10⁻⁶ -2 It is preferable that it be Ωcm or less. In addition, when using a light-emitting device that emits near-infrared light in a display device, it is preferable that the transmittance and reflectance of the near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less) of these electrodes are also within the above numerical range.

[0094] The buffer layer (192) or the buffer layer (194) may function as an optical adjustment layer. By varying the film thickness of the buffer layer (192) or the buffer layer (194), a specific color of light can be strongly extracted from each light-emitting device. Additionally, in the case where the semi-transparent / semi-reflective electrode is a stacked structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes refers to the optical distance between a pair of reflective electrodes.

[0095] The light-emitting device (190) has the function of emitting visible light. Specifically, the light-emitting device (190) is an electroluminescent device that emits light to the substrate (152) side by applying a voltage between the pixel electrode (191) and the common electrode (115) (see light emission (21)).

[0096] It is preferable that the light-emitting layer (193) be formed so as not to overlap with the light-receiving device (110). By doing so, the light-emitting layer (193) can suppress the absorption of light (22), thereby increasing the amount of light irradiated onto the light-receiving device (110).

[0097] The pixel electrode (181) is electrically connected to the source or drain of the transistor (41) through an opening provided in the insulating layer (214).

[0098] The pixel electrode (191) is electrically connected to the source or drain of the transistor (42) through an opening provided in the insulating layer (214). The transistor (42) has the function of controlling the driving of the light-emitting device (190).

[0099] The transistor (41) and the transistor (42) are in contact on the same layer (substrate (151) in FIG. 2).

[0100] It is preferable that at least a portion of the circuit electrically connected to the light receiving device (110) be formed using the same material and the same process as the circuit electrically connected to the light emitting device (190). This allows the thickness of the display device to be reduced and the manufacturing process to be simplified compared to the case where the two circuits are formed separately.

[0101] It is preferable that the light receiving device (110) and the light emitting device (190) are each covered with a protective layer (116). In FIG. 2, the protective layer (116) is provided in contact with the common electrode (115). By providing the protective layer (116), the entry of impurities such as water into the light receiving device (110) and the light emitting device (190) can be suppressed, thereby increasing the reliability of the light receiving device (110) and the light emitting device (190). Additionally, the protective layer (116) and the substrate (152) are bonded by an adhesive layer (142).

[0102] A light-blocking layer (158) is provided on the side of the substrate (152) on the side of the substrate (151). The light-blocking layer (158) has an opening at a position overlapping with the light-emitting device (190) and at a position overlapping with the light-receiving device (110). Furthermore, in the present specification, the position overlapping with the light-emitting device (190) specifically refers to a position overlapping with the light-emitting region of the light-emitting device (190). Likewise, the position overlapping with the light-receiving device (110) specifically refers to a position overlapping with the light-receiving region of the light-receiving device (110).

[0103] Here, the light receiving device (110) detects light that is reflected by an object from the light emitting device (190). However, there are cases where the light emitting device (190) is reflected within the display device (10) and enters the light receiving device (110) without passing through the object. The light blocking layer (158) can suppress the influence of such stray light. For example, if the light blocking layer (158) is not provided, the light (23) emitted by the light emitting device (190) is reflected from the substrate (152), and the reflected light (24) enters the light receiving device (110). By providing the light blocking layer (158), the entry of the reflected light (24) into the light receiving device (110) can be suppressed. This allows for noise reduction and increases the sensitivity of the sensor using the light receiving device (110).

[0104] As the light-blocking layer (158), a material that blocks light from a light-emitting device may be used. It is preferable that the light-blocking layer (158) absorbs visible light. As the light-blocking layer (158), a black matrix may be formed using, for example, a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light-blocking layer (158) may also be a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0105] [Display device (10A)]

[0106] A cross-sectional view of the display device (10A) is shown in (A) of FIG. 3. In addition, in the following description of the display device, the description of the configuration of the display device described above may be omitted.

[0107] The display device (10A) is different from the display device (10) in that it has a resin layer (159).

[0108] The resin layer (159) is provided on the surface of the substrate (152) on the side of the substrate (151). The resin layer (159) is provided at a position overlapping with the light-emitting device (190) and is not provided at a position overlapping with the light-receiving device (110).

[0109] The resin layer (159) may be configured to have an opening (159p) at a position overlapping with the light-emitting device (190), as shown in (B) of FIG. 3, for example, and at a position overlapping with the light-receiving device (110). Alternatively, the resin layer (159) may be configured to have an island shape at a position overlapping with the light-emitting device (190), as shown in (C) of FIG. 3, for example, and not at a position overlapping with the light-receiving device (110).

[0110] A light-blocking layer (158) is provided on the surface of the substrate (152) on the side of the substrate (151) and on the surface of the resin layer (159) on the side of the substrate (151). The light-blocking layer (158) has openings at positions overlapping with the light-emitting device (190) and at positions overlapping with the light-receiving device (110).

[0111] For example, the light-blocking layer (158) can absorb stray light (23a) reflected from the substrate (151) side of the substrate (152) after passing through the resin layer (159). Additionally, the light-blocking layer (158) can absorb stray light (23b) before reaching the resin layer (159). This allows for a reduction in stray light incident on the light-receiving device (110). Consequently, noise can be reduced, and the sensitivity of the sensor using the light-receiving device (110) can be increased. In particular, it is desirable for the light-blocking layer (158) to be located close to the light-emitting device (190) so that stray light can be further reduced. Furthermore, it is also desirable from the perspective of improving display quality because the light-blocking layer (158) can suppress the viewing angle dependence of the display.

[0112] Additionally, by providing a light-blocking layer (158), the range in which the light-receiving device (110) detects light can be controlled. If the light-blocking layer (158) is located away from the light-receiving device (110), the imaging range is narrowed, and the imaging resolution can be increased.

[0113] If the resin layer (159) has an opening, it is preferable that the light-blocking layer (158) covers at least a portion of the opening and at least a portion of the side of the resin layer (159) exposed at the opening.

[0114] When the resin layer (159) is provided in an island shape, it is preferable that the light-blocking layer (158) covers at least a portion of the side of the resin layer (159).

[0115] In this way, since the light-blocking layer (158) is provided along the shape of the resin layer (159), the distance from the light-blocking layer (158) to the light-emitting device (190) (specifically, the light-emitting region of the light-emitting device (190)) is shortened compared to the distance from the light-blocking layer (158) to the light-receiving device (110) (specifically, the light-receiving region of the light-receiving device (110)). As a result, the noise of the sensor can be reduced, the image resolution can be increased, and the dependence of the display on the viewing angle can be suppressed. Therefore, both the display quality and the image quality of the display device can be improved.

[0116] The resin layer (159) is a layer that transmits light from the light-emitting device (190). Examples of materials for the resin layer (159) include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Additionally, the structure provided between the substrate (152) and the light-blocking layer (158) is not limited to the resin layer and may use an inorganic insulating film, etc. The thicker the thickness of the structure, the greater the difference between the distance from the light-blocking layer to the light-receiving device and the distance from the light-blocking layer to the light-emitting device. Organic insulating films such as resin are suitable as the structure because they are easy to form thickly.

[0117] To compare the distance from the light-shielding layer (158) to the light-receiving device (110) and the distance from the light-shielding layer (158) to the light-emitting device (190), for example, the shortest distance (L1) from the end of the light-shielding layer (158) on the light-receiving device (110) side to the common electrode (115) and the shortest distance (L2) from the end of the light-shielding layer (158) on the light-emitting device (190) side to the common electrode (115) may be used. If the shortest distance (L2) is shorter compared to the shortest distance (L1), stray light from the light-emitting device (190) can be suppressed, and the sensitivity of the sensor using the light-receiving device (110) can be increased. In addition, the dependence of the display on the viewing angle can be suppressed. If the shortest distance (L1) is longer compared to the shortest distance (L2), the imaging range of the light-receiving device (110) can be narrowed, and the imaging resolution can be increased.

[0118] Additionally, in the adhesive layer (142), by making the portion overlapping with the light receiving device (110) thicker compared to the portion overlapping with the light emitting device (190), a difference may be created between the distance from the light shielding layer (158) to the light receiving device (110) and the distance from the light shielding layer (158) to the light emitting device (190).

[0119] [Display device (10B)]

[0120] A cross-sectional view of the display device (10B) is shown in (A) of Fig. 4.

[0121] The display device (10B) differs from the display device (10A) in that it does not have a buffer layer (182) and a buffer layer (192), but has a common layer (112).

[0122] The common layer (112) is located on the partition wall (216), on the pixel electrode (181), and on the pixel electrode (191). The common layer (112) is a layer commonly used in the light receiving device (110) and the light emitting device (190). The common layer (112) may be a single layer structure or a stacked structure.

[0123] As for the common layer (112), for example, one or both of a hole injection layer and a hole transport layer may be formed. The common layer (112) may have different functions in the light-emitting device (190) and in the light-receiving device (110). For example, when the common layer (112) has a hole injection layer, the hole injection layer functions as a hole injection layer in the light-emitting device (190) and functions as a hole transport layer in the light-receiving device (110).

[0124] It is desirable to reduce the manufacturing process of the display device by making at least some of the layers other than the active layer and the light-emitting layer common to each other in the light-receiving device and the light-emitting device.

[0125] [Display device (10C)]

[0126] A cross-sectional view of the display device (10C) is shown in (B) of Fig. 4.

[0127] The display device (10C) is different from the display device (10A) in that it does not have a buffer layer (184) and a buffer layer (194), but has a common layer (114).

[0128] The common layer (114) is located on the partition (216), on the active layer (183), and on the light-emitting layer (193). The common layer (114) is a layer commonly used in the light-receiving device (110) and the light-emitting device (190). The common layer (114) may be a single-layer structure or a stacked structure.

[0129] As for the common layer (114), for example, one or both of an electron injection layer and an electron transport layer may be formed. The common layer (114) may have different functions in the light-emitting device (190) and in the light-receiving device (110). For example, when the common layer (114) has an electron injection layer, the electron injection layer functions as an electron injection layer in the light-emitting device (190) and functions as an electron transport layer in the light-receiving device (110).

[0130] It is desirable to reduce the manufacturing process of the display device by making at least some of the layers other than the active layer and the light-emitting layer common to each other in the light-receiving device and the light-emitting device.

[0131] [Display device (10D)]

[0132] A cross-sectional view of the display device (10D) is shown in (A) of Fig. 5.

[0133] The display device (10D) is different from the display device (10A) in that it does not have a buffer layer (182), a buffer layer (192), a buffer layer (184), and a buffer layer (194), but has a common layer (112) and a common layer (114).

[0134] In the display device of the present embodiment, an organic compound is used in the active layer (183) of the light receiving device (110). The light receiving device (110) may have a layer other than the active layer (183) that is common to the light emitting device (190) (EL device). Therefore, by simply adding a film formation process of the active layer (183) to the manufacturing process of the light emitting device (190), the light receiving device (110) can be formed in parallel with the formation of the light emitting device (190). In addition, the light emitting device (190) and the light receiving device (110) can be formed on the same substrate. Thus, the light receiving device (110) can be embedded in the display device without significantly increasing the manufacturing process.

[0135] The display device (10D) illustrates an example in which the light receiving device (110) and the light emitting device (190) have a common configuration, except that the active layer (183) of the light receiving device (110) and the light emitting layer (193) of the light emitting device (190) are formed separately. However, the configuration of the light receiving device (110) and the light emitting device (190) is not limited thereto. The light receiving device (110) and the light emitting device (190) may have layers formed separately in addition to the active layer (183) and the light emitting layer (193) (see the display devices (10A, 10B, 10C) described above). It is preferable for the light receiving device (110) and the light emitting device (190) to have one or more layers that are used in common (common layers). By doing so, the light receiving device (110) can be embedded in the display device without significantly increasing the manufacturing process.

[0136] [Display device (10E)]

[0137] A cross-sectional view of the display device (10E) is shown in (B) of Fig. 5.

[0138] The display device (10E) differs from the display device (10D) in that it does not have a substrate (151) and a substrate (152), but has a substrate (153), a substrate (154), an adhesive layer (155), and an insulating layer (212).

[0139] The substrate (153) and the insulating layer (212) are bonded by an adhesive layer (155). The substrate (154) and the protective layer (116) are bonded by an adhesive layer (142).

[0140] The display device (10E) is configured by transferring an insulating layer (212), a transistor (41), a transistor (42), a light receiving device (110), and a light emitting device (190), etc., formed on a manufacturing substrate onto a substrate (153). It is preferable that the substrate (153) and the substrate (154) each have flexibility. This allows the flexibility of the display device (10E) to be increased. For example, it is preferable to use a resin for the substrate (153) and the substrate (154) respectively.

[0141] As substrates (153) and (154), polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. may each be used. Glass having a thickness sufficient to be flexible may be used for one or both of the substrates (153) and (154).

[0142] The substrate of the display device of the present embodiment may use a film with high optical isotropy. Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0143] [Display device (10F, 10G, 10H)]

[0144] A cross-sectional view of a display device (10F) is shown in (C) of FIG. 5. A cross-sectional view of a display device (10G) is shown in (A) of FIG. 6. A cross-sectional view of a display device (10H) is shown in (B) of FIG. 6.

[0145] The display device (10F) has a lens (149) in addition to the configuration of the display device (10D).

[0146] The display device of the present embodiment may have a lens (149). The lens (149) is provided in a position that overlaps with the light receiving device (110). In the display device (10F), the lens (149) is provided in contact with the substrate (152). The lens (149) of the display device (10F) has a convex surface on the side of the substrate (151).

[0147] When both the light-blocking layer (158) and the lens (149) are formed on the same surface as the substrate (152), the order of formation does not matter. Although an example in FIG. 5 (C) shows the lens (149) being formed first, the light-blocking layer (158) may be formed first. In FIG. 5 (C), the end of the lens (149) is covered with the light-blocking layer (158).

[0148] The display device (10F) is configured such that light (22) is incident on the light receiving device (110) through the lens (149). By having the lens (149), the imaging range of the light receiving device (110) can be narrowed compared to the case where the lens (149) is not present, and the overlapping of the imaging range with adjacent light receiving devices (110) can be suppressed. As a result, a clear image with less blurriness can be captured. In addition, when the imaging range of the light receiving device (110) is the same, having the lens (149) allows the size of the pinhole (in Fig. 5 (C), it corresponds to the size of the opening of the light-blocking layer (158) that overlaps with the light receiving device (110)) to be increased compared to the case where the lens (149) is not present. Therefore, by having the lens (149), the amount of light incident on the light receiving device (110) can be increased.

[0149] The display device (10G) shown in (A) of Fig. 6 is also one of the configurations in which light (22) is incident on the light receiving device (110) through the lens (149), just like the display device (10F).

[0150] In the display device (10G), a lens (149) is provided in contact with the upper surface of the protective layer (116). The lens (149) of the display device (10G) has a convex surface on the substrate (152) side.

[0151] The display device (10H) illustrated in (B) of FIG. 6 is provided with a lens array (146) on the display side of the substrate (152). The lenses of the lens array (146) are provided at a position that overlaps with the light receiving device (110). It is preferable that a light-blocking layer (158) be provided on the surface of the substrate (152) on the substrate (151) side.

[0152] As a method for forming a lens used in the display device of the present embodiment, a lens such as a micro-lens may be directly formed on a substrate or on a light-receiving device, or a lens array such as a separately manufactured micro-lens array may be bonded to the substrate.

[0153] It is preferable that the lens has a refractive index of 1.3 or higher and 2.5 or lower. The lens may be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin may be used for the lens. Additionally, a material containing at least one of an oxide and a sulfide may be used for the lens.

[0154] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, resins containing sulfur, etc., can be used in lenses. Alternatively, a material comprising a resin and nanoparticles of a material with a higher refractive index than the resin can be used in lenses. Titanium oxide or zirconium oxide, etc., can be used as nanoparticles.

[0155] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or oxides containing indium, gallium, and zinc, etc., can be used in the lens. Or, zinc sulfide, etc., can be used in the lens.

[0156] [Display device (10J)]

[0157] A cross-sectional view of the display device (10J) is shown in (C) of Fig. 6.

[0158] The display device (10J) differs from the display device (10D) in that it does not have a partition (216) that transmits visible light, but has a partition (217) that blocks visible light.

[0159] It is preferable that the partition (217) absorbs light emitted by the light-emitting device (190). As the partition (217), a black matrix can be formed using, for example, a resin material containing a pigment or dye. Additionally, by using a brown resist material, the partition (217) can be formed as a colored insulating layer.

[0160] In the display device (10D) (see (A) in FIG. 5), light emitted by the light-emitting device (190) is reflected by the substrate (152) and the partition (216), and the reflected light may be incident on the light-receiving device (110). Additionally, light emitted by the light-emitting device (190) may pass through the partition (216) and be reflected by the transistor or wiring, etc., so that the reflected light is incident on the light-receiving device (110). In the display device (10J), light is absorbed by the partition (217), thereby suppressing the incident of such reflected light on the light-receiving device (110). By doing so, noise can be reduced and the sensitivity of the sensor using the light-receiving device (110) can be increased.

[0161] It is preferable that the partition (217) absorbs at least the wavelength of light detected by the light receiving device (110). For example, when the light receiving device (110) detects green light emitted by the light emitting device (190), it is preferable that the partition (217) absorb at least the green light. For example, if the partition (217) has a red color filter, it can absorb green light, thereby suppressing reflected light from being incident on the light receiving device (110).

[0162] The light-blocking layer (158) can absorb most of the stray light (23b) before reaching the resin layer (159), but some of the stray light (23b) is reflected and may be incident on the partition wall (217). If the partition wall (217) is configured to absorb the stray light (23b), the stray light (23b) can be suppressed from being incident on the transistor or wiring, etc. Therefore, the stray light (23c) reaching the light-receiving device (110) can be suppressed. The more times the stray light (23b) hits the light-blocking layer (158) and the partition wall (217), the more the amount of light absorbed can be increased, so the amount of stray light (23c) reaching the light-receiving device (110) can be made very small. If the thickness of the resin layer (159) is thick, it is desirable because it can increase the number of times the light (23b) hits the light-blocking layer (158) and the partition (217).

[0163] Additionally, as the partition (217) absorbs light, the stray light (23d) directly incident on the partition (217) from the light-emitting device (190) can be absorbed by the partition (217). For this reason, by providing the partition (217), the stray light incident on the light-receiving device (110) can be reduced.

[0164] [Display device (10K)]

[0165] Figure 7 (A) shows a top view of a display device (10K). Figure 7 (B) shows a cross-sectional view between the dotted line A1 and A2 in Figure 7 (A). Figure 8 (A) shows a cross-sectional view between the dotted line A3 and A4 in Figure 7 (A).

[0166] In Fig. 7 (A), the area enclosed by the dotted border corresponds to a single pixel. A single pixel has a light receiving device (110), a red light emitting device (190R), a green light emitting device (190G), and a blue light emitting device (190B).

[0167] The top surface shape of the light receiving device (110) and the light emitting device (190R, 190G, 190B) is not particularly limited. In the pixel layout shown in (A) of FIG. 7, a hexagonal close-packed structure is applied. By using a hexagonal close-packed structure layout, the aperture ratio of the light receiving device (110) and the light emitting device (190R, 190G, 190) can be increased, which is desirable. When viewed from the top surface, the light receiving area of ​​the light receiving device (110) is rectangular, and the light emitting area of ​​the light emitting device (190R, 190G, 190B) is hexagonal.

[0168] When viewed from the top surface (or from the flat surface), the light receiving device (110) is provided on the inner side of the edge-shaped light-blocking layer (219a). By completely surrounding the four sides of the light receiving device (110) with the light-blocking layer (219a), the incident light on the light receiving device (110) can be suppressed. Additionally, the edge-shaped light-blocking layer (219a) may have gaps (which may be cut, broken, or missing).

[0169] When viewed from the top surface, a spacer (219b) is provided between the green light-emitting device (190G) and the blue light-emitting device (190B).

[0170] As shown in FIG. 7 (B) and FIG. 8 (A), the display device (10K) has a light receiving device (110), a red light emitting device (190R), a green light emitting device (190G), and a blue light emitting device (190B).

[0171] The light-emitting device (190R) has a pixel electrode (191R), a common layer (112), a light-emitting layer (193R), a common layer (114), and a common electrode (115). The light-emitting layer (193R) has an organic compound that emits red light (21R). The light-emitting device (190R) has the function of emitting red light.

[0172] The light-emitting device (190G) has a pixel electrode (191G), a common layer (112), a light-emitting layer (193G), a common layer (114), and a common electrode (115). The light-emitting layer (193G) has an organic compound that emits green light (21G). The light-emitting device (190G) has the function of emitting green light.

[0173] The light-emitting device (190B) has a pixel electrode (191B), a common layer (112), a light-emitting layer (193B), a common layer (114), and a common electrode (115). The light-emitting layer (193B) has an organic compound that emits blue light (21B). The light-emitting device (190B) has the function of emitting blue light.

[0174] The light receiving device (110) has a pixel electrode (181), a common layer (112), an active layer (183), a common layer (114), and a common electrode (115). The active layer (183) has an organic compound. The light receiving device (110) has the function of detecting visible light.

[0175] The display device (10K) has a light receiving device (110), a light emitting device (190R), a light emitting device (190G), a light emitting device (190B), a transistor (41), a transistor (42R), a transistor (42G), and a transistor (42B), etc., between a pair of substrates (substrate (151) and substrate (152)).

[0176] The ends of the pixel electrodes (181, 191R, 191G, 191B) are each covered by a partition (216).

[0177] The pixel electrode (181) is electrically connected to the source or drain of the transistor (41) through an opening provided in the insulating layer (214). The pixel electrode (191R) is electrically connected to the source or drain of the transistor (42R) through an opening provided in the insulating layer (214). Likewise, the pixel electrode (191G) is electrically connected to the source or drain of the transistor (42G) through an opening provided in the insulating layer (214). And, the pixel electrode (191B) is electrically connected to the source or drain of the transistor (42B) through an opening provided in the insulating layer (214).

[0178] The light receiving device (110) and the light emitting device (190R, 190G, 190B) are each covered with a protective layer (116).

[0179] A resin layer (159) is provided on the side of the substrate (152) on the side of the substrate (151). The resin layer (159) is provided at a position overlapping with the light-emitting device (190R, 190G, 190B) and is not provided at a position overlapping with the light-receiving device (110).

[0180] A light-shielding layer (158) is provided on the surface of the substrate (152) on the side of the substrate (151) and on the surface of the resin layer (159) on the side of the substrate (151). The light-shielding layer (158) has openings at positions overlapping with the light-emitting devices (190R, 190G, 190B) and at positions overlapping with the light-receiving device (110).

[0181] When viewed from the top surface, the partition wall (216) is provided with an opening in the shape of a border. In (B) of FIG. 7, the partition wall (216) has an opening between the light receiving device (110) and the light emitting device (190R). A light-blocking layer (219a) is provided to cover the opening. It is preferable that the light-blocking layer (219a) cover the opening of the partition wall (216) and the side of the partition wall (216) exposed at the opening. It is also preferable that the light-blocking layer (219a) further cover at least a portion of the top surface of the partition wall (216).

[0182] Although the configuration may be such that no opening is provided in the partition wall (216) and a light-blocking layer (219a) is provided on the partition wall (216), there is a possibility that fine light may pass through the partition wall (216) and be incident on the light-receiving device (110). By providing an opening in the partition wall (216) and a light-blocking layer (219a) to cover the opening, fine light that passes through the partition wall (216) is absorbed by the light-blocking layer (219a) at the opening of the partition wall (216). In this way, the incident light on the light-receiving device (110) can be suppressed.

[0183] It is preferable that the light-blocking layer (219a) has a purely tapered shape. This allows for increased coverage of the film (common layer (112), common layer (114), common electrode (115), and protective layer (116), etc.) provided on the light-blocking layer (219a).

[0184] It is preferable that the light-blocking layer (219a) absorbs at least the wavelength of light detected by the light-receiving device (110). For example, when the light-receiving device (110) detects green light emitted by the light-emitting device (190G), it is preferable that the light-blocking layer (219a) absorb at least the green light. For example, if the light-blocking layer (219a) has a red color filter, it can absorb green light, thereby suppressing reflected light from being incident on the light-receiving device (110). The light-blocking layer (219a) may be a black matrix formed using a resin material containing pigments or dyes. The light-blocking layer (219a) may be a laminated structure of a red color filter, a green color filter, and a blue color filter. Alternatively, a colored insulating layer may be formed by using a brown resist material as the light-blocking layer (219a).

[0185] For example, when the light receiving device (110) detects green light emitted by the light emitting device (190G), the light emitted by the light emitting device (190G) is reflected from the substrate (152) and the partition (216), and the reflected light may be incident on the light receiving device (110). Additionally, the light emitted by the light emitting device (190G) may pass through the partition (216) and be reflected from the transistor or wiring, etc., so that the reflected light is incident on the light receiving device (110). In the display device (10K), the light is absorbed by the light blocking layer (158) and the light blocking layer (219a), thereby suppressing the incident of such reflected light on the light receiving device (110). By doing so, noise can be reduced, and the sensitivity of the sensor using the light receiving device (110) can be increased.

[0186] For example, the light-blocking layer (158) can absorb most of the stray light (23b) before it reaches the resin layer (159). Additionally, even if some of the stray light (23b) is reflected from the light-blocking layer (158), the light-blocking layer (219a) absorbs the stray light (23b), thereby suppressing the stray light (23b) from being incident on the transistor or wiring, etc. Thus, the stray light reaching the light-receiving device (110) can be suppressed. The more times the stray light (23b) strikes the light-blocking layer (158) and the light-blocking layer (219a), the more the amount of light absorbed can be increased, so the amount of stray light reaching the light-receiving device (110) can be made very small. It is preferable for the resin layer (159) to be thicker, as this increases the number of times the stray light (23b) strikes the light-blocking layer (158) and the light-blocking layer (219a). If the thickness of the resin layer (159) is thick, the distance from the light-blocking layer (158) to each color light-emitting device is shortened, so the dependence of the display on the viewing angle can be suppressed, which is also desirable from the perspective of improving display quality.

[0187] Additionally, as the light-blocking layer (219a) absorbs light, the light-blocking layer (219a) can absorb the stray light (23d) that is directly incident on the light-blocking layer (219a) from the light-emitting device. For this reason, by providing the light-blocking layer (219a), the stray light incident on the light-receiving device (110) can be reduced.

[0188] Additionally, by providing a light-blocking layer (158), the range in which the light-receiving device (110) detects light can be controlled. If the distance from the light-blocking layer (158) to the light-receiving device (110) is long, the imaging range is narrowed, and the imaging resolution can be increased.

[0189] The spacer (219b) is positioned on the partition wall (216) and, when viewed from the top surface, is located between the light-emitting device (190G) and the light-emitting device (190B). It is preferable that the top surface of the spacer (219b) be closer to the light-blocking layer (158) than the top surface of the light-blocking layer (219a). If the thickness (L3) of the light-blocking layer (219a) is greater than the sum (L4) of the thickness of the partition wall (216) and the thickness of the spacer (219b), the adhesive layer (142) is not sufficiently filled inside the edge-shaped light-blocking layer (219a), and there is a risk that the reliability of the light-receiving device (110) and furthermore the display device (10K) will be reduced. Therefore, it is preferable that the sum (L4) of the thickness of the partition wall (216) and the thickness of the spacer (219b) is greater than the thickness (L3) of the light-blocking layer (219a). Thus, it becomes easier to fill the adhesive layer (142). As shown in FIG. 8 (A), at the portion where the spacer (219b) and the light-blocking layer (158) overlap, the light-blocking layer (158) may be in contact with the protective layer (116) (or common electrode (115)).

[0190] [Display device (10L)]

[0191] A cross-sectional view of the display device (10L) is shown in (B) of Fig. 8.

[0192] The display device (10L) is configured such that the light-emitting devices (190R, 190G, 190B) have the same light-emitting layer. (B) of FIG. 8 corresponds to a cross-sectional view between the dashed line A3-A4 in (A) of FIG. 7.

[0193] The light-emitting device (190G) illustrated in FIG. 8 (B) has a pixel electrode (191G), an optical adjustment layer (197G), a common layer (112), a light-emitting layer (113), a common layer (114), and a common electrode (115). The light-emitting device (190B) illustrated in FIG. 8 (B) has a pixel electrode (191B), an optical adjustment layer (197B), a common layer (112), a light-emitting layer (113), a common layer (114), and a common electrode (115). The common layer (112), the light-emitting layer (113), and the common layer (114) are common components in the light-emitting devices (190R, 190G, 190B). For example, the light-emitting layer (113) has a light-emitting layer (193R) that emits red light, a light-emitting layer (193G) that emits green light, and a light-emitting layer (193B) that emits blue light.

[0194] Additionally, in Fig. 8 (B), the EL layer is configured as a common layer (112), a light-emitting layer (113), and a common layer (114), but is not limited thereto. The light-emitting device may have a single structure having one light-emitting unit between the pixel electrode (191) and the common electrode (115), or a tandem structure having multiple light-emitting units.

[0195] The light-emitting layer (113) is provided in common to light-emitting devices that emit light of each color. The light emitted by the light-emitting device (190G) is extracted as green light (21G) through the coloring layer (CFG). The light emitted by the light-emitting device (190B) is extracted as blue light (21B) through the coloring layer (CFB).

[0196] The light-emitting device (190G) and the light-emitting device (190B) have the same configuration except that they have optical adjustment layers of different thicknesses. Reflective electrodes are used as pixel electrodes (191G) and (191B). A transparent electrode on top of the reflective electrode may be used as the optical adjustment layer. It is preferable that each color light-emitting device has an optical adjustment layer (197) of a different thickness. The light-emitting device (190G) shown in (B) of FIG. 8 is optically adjusted using an optical adjustment layer (197G) so that the optical distance between the pixel electrode (191G) and the common electrode (115) becomes an optical distance that strengthens green light. Likewise, the light-emitting device (190B) is optically adjusted using an optical adjustment layer (197B) so that the optical distance between the pixel electrode (191B) and the common electrode (115) becomes an optical distance that strengthens blue light.

[0197] [Display device (10M)]

[0198] Figure 9 (A) shows a top view of a display device (10M). Figure 9 (B) shows a cross-sectional view between the dotted line A5-A6 in Figure 9 (A).

[0199] The display device (10M) shown in (A) and (B) of FIG. 9 is different from the display device (10K) shown in (A), (B) of FIG. 7 and (A) of FIG. 8 in that a light-blocking layer (219a) is provided between the green light-emitting device (190G) and the blue light-emitting device (190B), and a hollow sealed structure in which the space (143) is filled with an inert gas is applied.

[0200] As with the display device (10M), the light-blocking layer (219a) may be provided on both sides between the light-emitting device (190R) and the light-receiving device (110) and between the light-emitting device (190G) and the light-emitting device (190B).

[0201] [Display device (10N)]

[0202] Figure 10 (A) shows a top view of a display device (10N). Figure 10 (B) shows a cross-sectional view between the dotted line A7-A8 in Figure 10 (A). Figure 11 (A) shows a cross-sectional view between the dotted line A9-A10 in Figure 10 (A).

[0203] In the cross-sectional structure between the dotted line A3-A4 in the display device (10N) (see (A) in FIG. 10), a configuration such as that of the display device (10K) (see (A) in FIG. 8) may be applied. Alternatively, a configuration such as that of the display device (10M) (see (B) in FIG. 9) may be applied.

[0204] The display device (10N) has a different upper surface shape and cross-sectional shape of the light-blocking layer (219a) than the display device (10K) (see (A) and (B) of FIG. 7).

[0205] When viewed from the top surface (or from the flat surface), the light-blocking layer (219a) surrounds the four sides of the light-receiving device (110), with one end and the other end separated from each other. The gap (220) (which may be described as a cut, a broken part, or a damaged part) of the light-blocking layer (219a) is located on the side of the red light-emitting device (190R). Here, if only a light-emitting device of a specific color is used as the light source for sensing, it is preferable that the gap (220) of the light-blocking layer (219a) be located on the side of a light-emitting device different from the light-emitting device used for sensing. For example, in the case of a display device (10N), it is preferable to perform sensing using a green light-emitting device (190G) or a blue light-emitting device (190B). By doing so, the influence of noise during sensing can be suppressed. Additionally, when performing sensing using a green light-emitting device (190G), as shown in area (230), it is preferable that one end of the light-blocking layer (219a) protrudes toward the red light-emitting device (190R) side relative to the green light-emitting device (190G). This prevents stray light from the green light-emitting device (190G) from entering the light-receiving device (110) through the gap (220).

[0206] The partition (216) has an opening between the light receiving device (110) and the light emitting device (190R). A light-blocking layer (219a) is provided to cover the opening. It is preferable that the light-blocking layer (219a) cover the opening of the partition (216) and the side of the partition (216) exposed at the opening. It is also preferable that the light-blocking layer (219a) further cover at least a portion of the upper surface of the partition (216).

[0207] The light-blocking layer (219a) may have an inverse taper shape. The thickness of the organic film and the common electrode (115) provided on the inverse taper-shaped light-blocking layer (219a) may become thinner near the side of the light-blocking layer (219a). Additionally, a void (160) may be formed near the side of the light-blocking layer (219a).

[0208] Here, when viewed from the top surface, if the light-blocking layer (219a) surrounds all four sides of the light-receiving device (110), the common electrode (115) is cut off by the light-blocking layer (219a), and there is a risk that the common electrode (115) will be separated from the inside and outside of the light-blocking layer (219a). Therefore, by configuring the top surface shape of the light-blocking layer (219a) to surround all four sides of the light-receiving device (110) and having one end and the other end separated, a gap (220) is provided, thereby preventing the common electrode (115) from being separated. This allows for the suppression of display defects in the display device (10N).

[0209] FIG. 11 (A) is a cross-sectional view including a gap (220) of a light-blocking layer (219a). When viewed from the top surface, the partition (216) is provided with an opening that surrounds four sides of the light-receiving device (110) and has one end and the other end separated from each other, similar to the top surface shape of the light-blocking layer (219a). In the gap (220) of the light-blocking layer (219a), a common layer (112), a common layer (114), a common electrode (115), and a protective layer (116) are provided in this order on the partition (216).

[0210] [Display device (10P)]

[0211] A cross-sectional view of the display device (10P) is shown in (B) of Fig. 11.

[0212] The display device (10P) is different from the display device (10N) in that it has a side wall (219c) that contacts the side of the light-blocking layer (219a).

[0213] The upper surface shape of the light-blocking layer (219a) in the display device (10P) may be a border shape as in (A) of FIG. 7, or may have a gap (220) as in (A) of FIG. 10.

[0214] By providing a side wall (219c) that contacts the side of the inversely tapered light-blocking layer (219a), the coverage of the organic film and the common electrode (115) can be improved, thereby increasing the display quality of the display device. By increasing the coverage of the common electrode (115), the disconnection of the common electrode (115) and further thinning can be suppressed, so that the non-uniformity of brightness of the display caused by the voltage drop of the common electrode (115) can be suppressed.

[0215] The side wall (219c) can be formed using a material that can be used for the bulkhead (216).

[0216] [Display device (10Q)]

[0217] Cross-sectional views of a display device (10Q) are shown in FIG. 12 (A) and (B). The display device (10Q) may have a top surface structure such as that of a display device (10K) (see FIG. 7 (A)). Cross-sectional views between the dashed lines A1 and A2 in FIG. 7 (A) are shown in FIG. 12 (A). Cross-sectional views between the dashed lines A3 and A4 in FIG. 7 (A) are shown in FIG. 12 (B).

[0218] The display device (10Q) is mainly different from the display device (10K) in that it has a partition (217) and does not have a partition (216).

[0219] The light-blocking layer (219a) is positioned above the partition wall (217). The partition wall (217) is different from the partition wall (216) and can absorb light emitted by the light-emitting device, so it is not necessary to provide an opening in the partition wall (217). The stray light (23d) incident on the partition wall (217) from the light-emitting device is absorbed by the partition wall (217). The stray light (23d) incident on the light-blocking layer (219a) from the light-emitting device is absorbed by the light-blocking layer (219a).

[0220] The spacer (219b) is positioned between the light-emitting device (190G) and the light-emitting device (190B). It is preferable that the upper surface of the spacer (219b) be closer to the light-blocking layer (158) than the upper surface of the light-blocking layer (219a). If the thickness of the spacer (219b) is thinner than the thickness of the light-blocking layer (219a), the adhesive layer (142) is not sufficiently filled inside the edge-shaped light-blocking layer (219a), and there is a risk that the reliability of the light-receiving device (110) and furthermore the display device (10Q) will be reduced. Therefore, it is preferable that the thickness of the spacer (219b) be thicker than the thickness of the light-blocking layer (219a). This makes it easier to fill the adhesive layer (142). As shown in (B) of FIG. 12, in the portion where the spacer (219b) and the light-shielding layer (158) overlap, the light-shielding layer (158) may be in contact with the protective layer (116) (or common electrode (115)).

[0221] Hereinafter, a more detailed configuration of a display device of one embodiment of the present invention will be described using FIGS. 13 to 17.

[0222] [Display device (100A)]

[0223] FIG. 13 shows a perspective view of a display device (100A), and FIG. 14 shows a cross-sectional view of a display device (100A).

[0224] The display device (100A) has a configuration in which a substrate (152) and a substrate (151) are joined. In FIG. 13, the substrate (152) is indicated by a dashed line.

[0225] The display device (100A) has a display section (162), a circuit (164), wiring (165), etc. FIG. 13 illustrates an example in which an IC (integrated circuit) (173) and an FPC (172) are mounted on the display device (100A). Therefore, the configuration shown in FIG. 13 may be described as a display module having a display device (100A), an IC, and an FPC.

[0226] For example, a scan line driving circuit can be used as the circuit (164).

[0227] The wiring (165) has the function of supplying signals and power to the display unit (162) and the circuit (164). The signals and power are input to the wiring (165) from the outside through the FPC (172) or from the IC (173).

[0228] FIG. 13 illustrates an example in which an IC (173) is provided on a substrate (151) by means of a COG (Chip On Glass) method or a COF (Chip On Film) method. For example, an IC having a scan line driving circuit or a signal line driving circuit may be applied to the IC (173). Additionally, the display device (100A) and the display module may be configured without providing an IC. Furthermore, the IC may be mounted on an FPC by means of a COF method.

[0229] FIG. 14 illustrates an example of a cross-section in which a portion of the area including the FPC (172), a portion of the circuit (164), a portion of the display part (162), and a portion of the area including the end part are each cut in the display device (100A).

[0230] The display device (100A) illustrated in FIG. 14 has a transistor (201), a transistor (205), a transistor (206), a light-emitting device (190), a light-receiving device (110), etc. between a substrate (151) and a substrate (152).

[0231] The resin layer (159) and the insulating layer (214) are bonded together via an adhesive layer (142). A solid sealing structure or a hollow sealing structure may be applied to the sealing of the light-emitting device (190) and the light-receiving device (110). In FIG. 14, the space (143) surrounded by the substrate (152), the adhesive layer (142), and the substrate (151) is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer (142) may be provided overlapping the light-emitting device (190) and the light-receiving device (110). Additionally, the space (143) surrounded by the substrate (152), the adhesive layer (142), and the substrate (151) may be filled with a resin different from that of the adhesive layer (142).

[0232] The light-emitting device (190) has a stacked structure in which a pixel electrode (191), a common layer (112), a light-emitting layer (193), a common layer (114), and a common electrode (115) are stacked in this order from the side of the insulating layer (214). The pixel electrode (191) is connected to a conductive layer (222b) of a transistor (206) through an opening provided in the insulating layer (214).

[0233] The end of the pixel electrode (191) is covered by a partition (217). The pixel electrode (191) includes a material that reflects visible light, and the common electrode (115) includes a material that transmits visible light.

[0234] The light receiving device (110) has a stacked structure in which a pixel electrode (181), a common layer (112), an active layer (183), a common layer (114), and a common electrode (115) are stacked in this order from the side of the insulating layer (214). The pixel electrode (181) is electrically connected to a conductive layer (222b) of a transistor (205) through an opening provided in the insulating layer (214). The end of the pixel electrode (181) is covered by a partition (217). The pixel electrode (181) includes a material that reflects visible light, and the common electrode (115) includes a material that transmits visible light.

[0235] The light emitted by the light-emitting device (190) is emitted toward the substrate (152). Additionally, light is incident on the light-receiving device (110) through the substrate (152) and the space (143). It is preferable to use a material with high transmittance to visible light for the substrate (152).

[0236] The pixel electrode (181) and the pixel electrode (191) can be manufactured using the same material and the same process. The common layer (112), the common layer (114), and the common electrode (115) are used in both the light receiving device (110) and the light emitting device (190). The light receiving device (110) and the light emitting device (190) can have a common configuration except that the configuration of the active layer (183) and the light emitting layer (193) is different. Thus, the light receiving device (110) can be embedded in the display device (100A) without significantly increasing the manufacturing process.

[0237] A resin layer (159) and a light-blocking layer (158) are provided on the surface of the substrate (152) on the side of the substrate (151). The resin layer (159) is provided at a position overlapping with the light-emitting device (190) and is not provided at a position overlapping with the light-receiving device (110). The light-blocking layer (158) is provided covering the surface of the substrate (152) on the side of the substrate (151), the side of the resin layer (159), and the surface of the resin layer (159) on the side of the substrate (151). The light-blocking layer (158) has an opening at a position overlapping with the light-receiving device (110) and at a position overlapping with the light-emitting device (190). By providing the light-blocking layer (158), the range in which the light-receiving device (110) detects light can be controlled. In addition, by having a light-blocking layer (158), it is possible to suppress light from the light-emitting device (190) directly entering the light-receiving device (110) without passing through the object. Therefore, a sensor with low noise and high sensitivity can be realized. By providing a resin layer (159), the distance from the light-blocking layer (158) to the light-emitting device (190) can be shortened compared to the distance from the light-blocking layer (158) to the light-receiving device (110). This allows for the reduction of sensor noise while suppressing the dependence of the display's viewing angle. Consequently, both display quality and image quality can be improved.

[0238] The configuration of the partition (217) and the light-blocking layer (219a) in the display device (100A) is the same as that of the display device (10Q) (see (A) in FIG. 12).

[0239] The partition (217) covers the ends of the pixel electrode (181) and the pixel electrode (191). A light-blocking layer (219a) is provided over the partition (217). The light-blocking layer (219a) is located between the light-receiving device (110) and the light-emitting device (190). It is preferable that the partition (217) and the light-blocking layer (219a) absorb the wavelength of light detected by the light-receiving device (110). This allows for suppression of stray light incident on the light-receiving device (110).

[0240] The transistors (201), (205), and (206) are all formed on the substrate (151). These transistors can be manufactured using the same material and the same process.

[0241] On the substrate (151), insulating layers (211), insulating layers (213), insulating layers (215), and insulating layers (214) are provided in this order. A portion of the insulating layer (211) functions as the gate insulating layer of each transistor. A portion of the insulating layer (213) functions as the gate insulating layer of each transistor. The insulating layer (215) is provided to cover the transistor. The insulating layer (214) is provided to cover the transistor and functions as a flattening layer. Additionally, the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.

[0242] It is preferable to use a material that is resistant to the diffusion of impurities, such as water or hydrogen, into at least one layer of the insulating layer covering the transistor. By doing so, the insulating layer can function as a barrier layer. With this configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby increasing the reliability of the display device.

[0243] It is preferable to use an inorganic insulating film for each of the insulating layer (211), insulating layer (213), and insulating layer (215). Examples of inorganic insulating films may include silicon nitride film, silicon nitride film, silicon oxide film, silicon nitride film, aluminum oxide film, aluminum nitride film, etc. Additionally, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may be used. Furthermore, two or more of the above-described insulating films may be laminated and used.

[0244] Here, organic insulating films often have lower barrier properties compared to inorganic insulating films. Therefore, it is preferable for the organic insulating film to have an opening near the end of the display device (100A). This prevents impurities from entering through the organic insulating film from the end of the display device (100A). Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display device (100A), so that the organic insulating film is not exposed at the end of the display device (100A).

[0245] An organic insulating film is suitable for the insulating layer (214) that functions as a flattening layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins.

[0246] In the region (228) illustrated in FIG. 14, an opening is formed in the insulating layer (214). Thus, even when an organic insulating film is used in the insulating layer (214), it is possible to suppress the entry of impurities into the display unit (162) from the outside through the insulating layer (214). Therefore, the reliability of the display device (100A) can be increased.

[0247] The transistor (201), transistor (205), and transistor (206) have a conductive layer (221) that functions as a gate, an insulating layer (211) that functions as a gate insulating layer, a conductive layer (222a) and a conductive layer (222b) that functions as a source and drain, a semiconductor layer (231), an insulating layer (213) that functions as a gate insulating layer, and a conductive layer (223) that functions as a gate. Here, the same hatch pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer (211) is located between the conductive layer (221) and the semiconductor layer (231). The insulating layer (213) is located between the conductive layer (223) and the semiconductor layer (231).

[0248] The structure of the transistor in the display device of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverse staggered transistor, etc., may be used. In addition, either a top-gate type or a bottom-gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed.

[0249] The transistor (201), transistor (205), and transistor (206) are configured such that a semiconductor layer in which a channel is formed is fitted with two gates. The transistor may be driven by connecting the two gates and supplying the same signal to them. Alternatively, the threshold voltage of the transistor may be controlled by supplying a potential to one of the two gates to control the threshold voltage and supplying a potential to drive it to the other gate.

[0250] The crystallinity of the semiconductor material used in the transistor is not particularly limited, and either amorphous semiconductors or crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors having crystalline regions in some parts) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0251] It is preferable for the semiconductor layer of the transistor to have a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0252] The semiconductor layer preferably comprises, for example, indium, M (M is one or more types selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more types selected from aluminum, gallium, yttrium, and tin.

[0253] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer.

[0254] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide be greater than or equal to the atomic ratio of M. As for the atomic ratio of metallic elements in such In-M-Zn oxides, the composition is In:M:Zn=1:1:1 or near it, In:M:Zn=1:1:1.2 or near it, In:M:Zn=2:1:3 or near it, In:M:Zn=3:1:2 or near it, In:M:Zn=4:2:3 or near it, In:M:Zn=4:2:4.1 or near it, In:M:Zn=5:1:3 or near it, In:M:Zn=5:1:6 or near it, In:M:Zn=5:1:7 or near it, In:M:Zn=5:1:8 or near it, In:M:Zn=6:1:6 or near it, In:M:Zn=5:2:5 or near it Examples include the nearby composition. Furthermore, the nearby composition refers to a range of ±30% of the desired atomic ratio.

[0255] For example, when the atomic ratio is described as In:Ga:Zn=4:2:3 or a composition in the vicinity thereof, it includes cases where, when the atomic ratio of In is set to 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Additionally, when the atomic ratio is described as In:Ga:Zn=5:1:6 or a composition in the vicinity thereof, it includes cases where, when the atomic ratio of In is set to 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Additionally, when the atomic ratio is described as In:Ga:Zn=1:1:1 or a composition in the vicinity thereof, it includes cases where, when the atomic ratio of In is set to 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0256] The transistors of the circuit (164) and the transistors of the display unit (162) may have the same structure or different structures. The structures of the multiple transistors of the circuit (164) may all be the same or two or more types. Likewise, the structures of the multiple transistors of the display unit (162) may all be the same or two or more types.

[0257] A connection portion (204) is provided in the area of ​​the substrate (151) where the substrate (152) does not overlap. In the connection portion (204), wiring (165) is electrically connected to the FPC (172) through a conductive layer (166) and a connection layer (242). On the upper surface of the connection portion (204), a conductive layer (166) obtained by processing a conductive film identical to the pixel electrode (181) is exposed. Thus, the connection portion (204) and the FPC (172) can be electrically connected through the connection layer (242).

[0258] Various optical components may be arranged on the outer side of the substrate (152). Examples of optical components include a polarizing plate, a phase difference plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-concentrating film. Additionally, on the outer side of the substrate (152), an antistatic film that suppresses dust adhesion, a water-repellent film that makes it difficult for contamination to adhere, a hard coat film that suppresses damage from use, and a shock-absorbing layer may be arranged.

[0259] The substrate (151) and the substrate (152) may each be made of glass, quartz, ceramic, sapphire, resin, etc. If a flexible material is used for the substrate (151) and the substrate (152), the flexibility of the display device can be increased.

[0260] As the adhesive layer, various types of curing adhesives may be used, such as photocuring adhesives like UV-curing adhesives, reaction-curing adhesives, heat-curing adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, materials with low moisture permeability, such as epoxy resin, are preferred. Additionally, a two-component mixed resin may be used. Furthermore, an adhesive sheet may be used.

[0261] As the connection layer (242), an anisotropic conductive film (ACF), anisotropic conductive paste (ACP), etc. can be used.

[0262] The light-emitting device (190) includes a top emission type, a bottom emission type, a dual emission type, etc. A conductive film that transmits visible light is used on the electrode on the side that extracts light. In addition, it is preferable to use a conductive film that reflects visible light on the electrode on the side that does not extract light.

[0263] The light-emitting device (190) has at least a light-emitting layer (193). The light-emitting device (190) may further have a layer other than the light-emitting layer (193) comprising a material with high hole injection properties, a material with high hole transport properties, a hole block material, a material with high electron transport properties, a material with high electron injection properties, or a bipolar material (a material with high electron transport properties and high hole transport properties). For example, it is preferable that the common layer (112) has one or both of a hole injection layer and a hole transport layer. For example, it is preferable that the common layer (114) has one or both of an electron transport layer and an electron injection layer.

[0264] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and is a layer containing a material with high hole injection properties. As a material with high hole injection properties, aromatic amine compounds or composite materials containing a hole transport material and an acceptor material (electron accepting material) may be used.

[0265] In a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a photodetector, the hole transport layer is a layer that transports holes generated based on light incident from the active layer to the anode. The hole transport layer is a layer containing a hole-transporting material. As for the hole-transporting material, 10 -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. Additionally, materials other than these may be used if they have higher hole transportability than electron transportability. As a hole transport material, materials with high hole transportability, such as π-electron excess heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) or aromatic amines (compounds having an aromatic amine backbone), are preferred.

[0266] In a light-emitting device, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a photoreceiving device, the electron transport layer is a layer that transports electrons generated based on light incident from the active layer to the cathode. The electron transport layer is a layer containing an electron-transporting material. As for the electron-transporting material, 1×10 -6 cm 2 A material having an electron mobility of / Vs or higher is preferred. Additionally, if the electron transport is higher than that of holes, materials other than these may be used. As electron transport materials, in addition to metal complexes having a quinoline backbone, metal complexes having a benzoquinoline backbone, metal complexes having an oxazole backbone, metal complexes having a thiazole backbone, etc., materials with high electron transport can be used, such as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0267] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material with high electron injection properties. Alkali metals, alkaline earth metals, or compounds thereof may be used as materials with high electron injection properties. As materials with high electron injection properties, composite materials containing an electron transport material and a donor material (electron-donating material) may also be used.

[0268] The common layer (112), the light-emitting layer (193), and the common layer (114) may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also include inorganic compounds. The layers constituting the common layer (112), the light-emitting layer (193), and the common layer (114) can each be formed by a deposition method (including vacuum deposition), a transfer method, a printing method, an inkjet method, a coating method, etc.

[0269] The light-emitting layer (193) is a layer containing a light-emitting material. The light-emitting layer (193) may have one or more types of light-emitting materials. As the light-emitting material, a material that emits a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is appropriately used. In addition, as the light-emitting material, a material that emits near-infrared light may also be used.

[0270] The active layer (183) of the light receiving device (110) includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer (193) of the light-emitting device (190) and the active layer (183) of the light receiving device (110) can be formed by the same method (e.g., vacuum deposition), and the manufacturing apparatus can be standardized.

[0271] As an n-type semiconductor material having an active layer (183), fullerene (e.g., C 60 , C 70Examples of electron-accepting organic semiconductor materials include copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), etc., or derivatives thereof. Additionally, as a p-type semiconductor material for the active layer (183), electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), and zinc phthalocyanine (ZnPc) may be used. Furthermore, tin phthalocyanine (SnPc) may be used as a p-type semiconductor material.

[0272] For example, it is preferable that the active layer (183) be formed by co-depositing an n-type semiconductor and a p-type semiconductor.

[0273] Materials that can be used for conductive layers, such as various wirings and electrodes constituting a display device, in addition to the gate, source, and drain of a transistor, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys having the said metals as the main component. A film containing these materials can be used in a single-layer or stacked structure.

[0274] In addition, as a conductive material having light transparency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene may be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing said metal materials may be used. Alternatively, nitrides of said metal materials (e.g., titanium nitride) may be used. Furthermore, when using metal materials or alloy materials (or their nitrides), it is desirable to make them thin enough to have light transparency. In addition, a laminated film of said materials may be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is desirable because it can increase conductivity. These may be used as conductive layers such as various wirings and electrodes constituting a display device, or as conductive layers of a display device (conductive layers that function as pixel electrodes or common electrodes).

[0275] Insulating materials that can be used for each insulating layer include, for example, resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon nitride, silicon nitride, silicon nitride, and aluminum oxide.

[0276] [Display device (100B)]

[0277] A cross-sectional view of the display device (100B) is shown in (A) of Fig. 15.

[0278] The display device (100B) differs mainly from the display device (100A) in that it has a protective layer (116) and a solid sealing structure.

[0279] By providing a protective layer (116) covering the light receiving device (110) and the light emitting device (190), the entry of impurities such as water into the light receiving device (110) and the light emitting device (190) can be suppressed, thereby increasing the reliability of the light receiving device (110) and the light emitting device (190).

[0280] In the region (228) near the end of the display device (100B), it is preferable for the insulating layer (215) and the protective layer (116) to come into contact with each other through the opening of the insulating layer (214). In particular, it is preferable for the inorganic insulating film of the insulating layer (215) and the inorganic insulating film of the protective layer (116) to come into contact with each other. By doing so, it is possible to suppress the entry of impurities into the display part (162) from the outside through the organic insulating film. Accordingly, the reliability of the display device (100B) can be increased.

[0281] An example in FIG. 15 (B) shows that the protective layer (116) has a three-layer structure. In FIG. 15 (B), the protective layer (116) has an inorganic insulating layer (116a) on the common electrode (115), an organic insulating layer (116b) on the inorganic insulating layer (116a), and an inorganic insulating layer (116c) on the organic insulating layer (116b).

[0282] The end of the inorganic insulating layer (116a) and the end of the inorganic insulating layer (116c) extend outwardly beyond the end of the organic insulating layer (116b), and they come into contact with each other. Additionally, the inorganic insulating layer (116a) comes into contact with the insulating layer (215) (inorganic insulating layer) through the opening of the insulating layer (214) (organic insulating layer). As a result, the light receiving device (110) and the light emitting device (190) can be surrounded by the insulating layer (215) and the protective layer (116), thereby increasing the reliability of the light receiving device (110) and the light emitting device (190).

[0283] In this way, the protective layer (116) may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable to extend the end of the inorganic insulating film outwardly more than the end of the organic insulating film.

[0284] Additionally, in the display device (100B), the protective layer (116) and the substrate (152) are bonded by an adhesive layer (142). The adhesive layer (142) is provided overlapping with the light receiving device (110) and the light emitting device (190), respectively, and a solid sealing structure is applied to the display device (100B).

[0285] [Display device (100C)]

[0286] A cross-sectional view of a display device (100C) is shown in (A) of FIGS. 16 and FIGS. 17. A perspective view of the display device (100C) is the same as that of the display device (100A) (see FIG. 13). FIG. 16 shows an example of a cross-section in which a portion of the area including the FPC (172), a portion of the circuit (164), and a portion of the display unit (162) are each cut out of the display device (100C). FIG. 17 (A) shows an example of a cross-section in which a portion of the display unit (162) is cut out of the display device (100C). FIG. 16 shows an example of a cross-section in which a portion including the light receiving device (110) and the light emitting device (190R) emitting red light is cut out of the display unit (162). Figure 17 (A) illustrates an example of a cross-section in which a region including a light-emitting device (190G) that emits green light and a light-emitting device (190B) that emits blue light is cut in the display portion (162).

[0287] The display device (100C) shown in (A) of FIGS. 16 and 17 has a transistor (203), a transistor (207), a transistor (208), a transistor (209), a transistor (210), a light-emitting device (190R), a light-emitting device (190G), a light-emitting device (190B), and a light-receiving device (110), etc. between a substrate (153) and a substrate (154).

[0288] The resin layer (159) and the common electrode (115) are bonded together via an adhesive layer (142), and a solid sealing structure is applied to the display device (100C).

[0289] The substrate (153) and the insulating layer (212) are bonded by an adhesive layer (155). The substrate (154) and the insulating layer (157) are bonded by an adhesive layer (156).

[0290] As a method for manufacturing a display device (100C), first, a first manufacturing substrate provided with an insulating layer (212), each transistor, a light receiving device (110), each light emitting device, etc., and a second manufacturing substrate provided with an insulating layer (157), a resin layer (159), and a light-blocking layer (158), etc., are bonded by an adhesive layer (142). Then, the first manufacturing substrate is peeled off and a substrate (153) is bonded to the exposed surface, and the second manufacturing substrate is peeled off and a substrate (154) is bonded to the exposed surface, thereby transferring each component formed on the first manufacturing substrate and the second manufacturing substrate to the substrate (153) and the substrate (154). It is preferable that the substrate (153) and the substrate (154) each have flexibility. By doing so, the flexibility of the display device (100C) can be increased.

[0291] In the insulating layer (212) and insulating layer (157), an inorganic insulating film that can be used for the insulating layer (211), insulating layer (213), and insulating layer (215) can be used, respectively.

[0292] The light-emitting device (190R) has a stacked structure in which a pixel electrode (191R), a common layer (112), a light-emitting layer (193R), a common layer (114), and a common electrode (115) are stacked in this order from the side of the insulating layer (214b). The pixel electrode (191R) is connected to a conductive layer (169R) through an opening provided in the insulating layer (214b). The conductive layer (169R) is connected to a conductive layer (222b) of a transistor (208) through an opening provided in the insulating layer (214a). The conductive layer (222b) is connected to a low-resistance region (231n) through an opening provided in the insulating layer (215). That is, the pixel electrode (191R) is electrically connected to the transistor (208). The transistor (208) has the function of controlling the operation of the light-emitting device (190R).

[0293] Likewise, the light-emitting device (190G) has a stacked structure in which a pixel electrode (191G), a common layer (112), a light-emitting layer (193G), a common layer (114), and a common electrode (115) are stacked in that order on the side of the insulating layer (214b). The pixel electrode (191G) is electrically connected to the low-resistance region (231n) of the transistor (209) through the conductive layer (169G) and the conductive layer (222b) of the transistor (209). That is, the pixel electrode (191G) is electrically connected to the transistor (209). The transistor (209) has the function of controlling the operation of the light-emitting device (190G).

[0294] And, the light-emitting device (190B) has a stacked structure in which a pixel electrode (191B), a common layer (112), a light-emitting layer (193B), a common layer (114), and a common electrode (115) are stacked in this order from the side of the insulating layer (214b). The pixel electrode (191B) is electrically connected to the low-resistance region (231n) of the transistor (210) through the conductive layer (169B) and the conductive layer (222b) of the transistor (210). That is, the pixel electrode (191B) is electrically connected to the transistor (210). The transistor (210) has the function of controlling the operation of the light-emitting device (190B).

[0295] The light receiving device (110) has a stacked structure in which a pixel electrode (181), a common layer (112), an active layer (183), a common layer (114), and a common electrode (115) are stacked in this order from the side of the insulating layer (214b). The pixel electrode (181) is electrically connected to the low-resistance region (231n) of the transistor (207) through the conductive layer (168) and the conductive layer (222b) of the transistor (207). That is, the pixel electrode (181) is electrically connected to the transistor (207).

[0296] The ends of the pixel electrodes (181, 191R, 191G, 191B) are covered by a partition (216). The pixel electrodes (181, 191R, 191G, 191B) include a material that reflects visible light, and the common electrode (115) includes a material that transmits visible light.

[0297] Light emitted by the light-emitting devices (190R, 190G, 190B) is emitted toward the substrate (154). Additionally, light is incident on the light-receiving device (110) through the substrate (154) and the adhesive layer (142). It is preferable to use a material with high transmittance to visible light for the substrate (154).

[0298] The pixel electrode (181) and the pixel electrode (191) can be manufactured using the same material and the same process. The common layer (112), the common layer (114), and the common electrode (115) are used in common in the light receiving device (110) and the light emitting device (190R, 190G, 190B). The light receiving device (110) and each color light emitting device can have a common configuration except that the configuration of the active layer (183) and the light emitting layer is different. Thus, the light receiving device (110) can be embedded in the display device (100C) without significantly increasing the manufacturing process.

[0299] A resin layer (159) and a light-blocking layer (158) are provided on the substrate (153) side of the insulating layer (157). The resin layer (159) is provided at a position overlapping with the light-emitting device (190R, 190G, 190B) and is not provided at a position overlapping with the light-receiving device (110). The light-blocking layer (158) is provided to cover the substrate (153) side of the insulating layer (157), the side of the resin layer (159), and the substrate (153) side of the resin layer (159). The light-blocking layer (158) has an opening at a position overlapping with the light-receiving device (110) and at a position overlapping with each of the light-emitting devices (190R, (190G), 190B). By providing the light-blocking layer (158), the range in which the light-receiving device (110) detects light can be controlled. In addition, by having a light-blocking layer (158), it is possible to suppress light from the light-emitting device (190R, 190G, 190B) directly entering the light-receiving device (110) without passing through the object. Therefore, a sensor with low noise and high sensitivity can be realized. By providing a resin layer (159), the distance from the light-blocking layer (158) to each color's light-emitting device is shorter compared to the distance from the light-blocking layer (158) to the light-receiving device (110). This allows for reducing noise in the sensor while suppressing the dependence of the display's viewing angle. Consequently, both display quality and image quality can be improved.

[0300] The configuration of the partition (216), the light-blocking layer (219a), and the spacer (219b) in the display device (100C) is the same as that of the display device (10K) (see (B) in FIG. 7 and (A) in FIG. 8).

[0301] In FIG. 16, the partition (216) has an opening between the light receiving device (110) and the light emitting device (190R). A light-blocking layer (219a) is provided to fill the opening. The light-blocking layer (219a) is located between the light receiving device (110) and the light emitting device (190R). The light-blocking layer (219a) absorbs light emitted by the light emitting device (190R). This allows for suppression of stray light incident on the light receiving device (110).

[0302] The spacer (219b) is positioned between the light-emitting device (190G) and the light-emitting device (190B). It is preferable that the upper surface of the spacer (219b) be closer to the light-blocking layer (158) than the upper surface of the light-blocking layer (219a). For example, it is preferable that the sum of the height (thickness) of the partition wall (216) and the height (thickness) of the spacer (219b) be greater than the height (thickness) of the light-blocking layer (219a). This makes it easier to fill the adhesive layer (142). As shown in FIG. 17 (A), the light-blocking layer (158) may be in contact with the common electrode (115) (or protective layer) at the portion where the spacer (219b) and the light-blocking layer (158) overlap.

[0303] A connection portion (204) is provided in an area of ​​the substrate (153) where the substrate (154) does not overlap. In the connection portion (204), wiring (165) is electrically connected to the FPC (172) through a conductive layer (167), a conductive layer (166), and a connection layer (242). The conductive layer (167) can be obtained by processing a conductive film identical to the conductive layer (168). On the upper surface of the connection portion (204), a conductive layer (166) obtained by processing a conductive film identical to the pixel electrode (181) is exposed. Thus, the connection portion (204) and the FPC (172) can be electrically connected through the connection layer (242).

[0304] The transistor (207), transistor (208), transistor (209), and transistor (210) have a conductive layer (221) functioning as a gate, an insulating layer (211) functioning as a gate insulating layer, a semiconductor layer having a channel forming region (231i) and a pair of low-resistance regions (231n), a conductive layer (222a) connected to one of the pair of low-resistance regions (231n), a conductive layer (222b) connected to the other of the pair of low-resistance regions (231n), an insulating layer (225) functioning as a gate insulating layer, a conductive layer (223) functioning as a gate, and an insulating layer (215) covering the conductive layer (223). The insulating layer (211) is located between the conductive layer (221) and the channel forming region (231i). The insulating layer (225) is located between the conductive layer (223) and the channel forming region (231i).

[0305] The conductive layer (222a) and the conductive layer (222b) are each connected to the low-resistance region (231n) through an opening provided in the insulating layer (215). One of the conductive layer (222a) and the conductive layer (222b) functions as a source, and the other functions as a drain.

[0306] In FIG. 16, the insulating layer (225) overlaps with the channel forming region (231i) of the semiconductor layer (231) and does not overlap with the low-resistance region (231n). For example, the structure shown in FIG. 16 can be fabricated by processing the insulating layer (225) using the conductive layer (223) as a mask. In FIG. 16, an insulating layer (215) is provided covering the insulating layer (225) and the conductive layer (223), and the conductive layer (222a) and the conductive layer (222b) are each connected to the low-resistance region (231n) through the opening of the insulating layer (215). Additionally, an insulating layer covering the transistor may be provided over the conductive layer (222a) and the conductive layer (222b).

[0307] Meanwhile, (B) of FIG. 17 illustrates an example in which an insulating layer (225) covers the upper and side surfaces of a semiconductor layer. The conductive layer (222a) and the conductive layer (222b) are connected to a low-resistance region (231n) through openings provided in the insulating layer (225) and the insulating layer (215), respectively.

[0308] As described above, the display device of the present embodiment has a light-receiving device and a light-emitting device in the display portion, and the display portion has both the function of displaying an image and the function of detecting light. By doing so, compared to the case where a sensor is provided outside the display portion or outside the display device, it is possible to achieve miniaturization and weight reduction of the electronic device. Furthermore, by combining with a sensor provided outside the display portion or outside the display device, an electronic device having more functions can be realized.

[0309] The light-receiving device may have at least one layer among the layers provided between a pair of electrodes in a configuration common to the light-emitting device (EL device). For example, the light-receiving device may have all layers other than the active layer in a configuration common to the light-emitting device (EL device). That is, by simply adding a film deposition process of the active layer to the fabrication process of the light-emitting device, the light-emitting device and the light-receiving device can be formed on the same substrate. Furthermore, the pixel electrode and the common electrode of the light-receiving device and the light-emitting device can be formed using the same material and the same process, respectively. In addition, by fabricating the circuit electrically connected to the light-receiving device and the circuit electrically connected to the light-emitting device using the same material and the same process, the fabrication process of the display device can be simplified. In this way, a display device with high convenience and an embedded light-receiving device can be manufactured without complex processes.

[0310] The display device of the present embodiment provides a structure on the surface forming the light-shielding layer so that the distance from the light-shielding layer to the light-receiving device is increased and the distance from the light-shielding layer to the light-emitting device is decreased. By doing so, it is possible to reduce noise in the sensor, increase the image resolution, and suppress the dependence of the display on the viewing angle. Accordingly, both the display quality and the image quality of the display device can be improved.

[0311] The present embodiment may be appropriately combined with other embodiments. In addition, if multiple configuration examples are shown in one embodiment in this specification, the configuration examples may be appropriately combined.

[0312] (Embodiment 2)

[0313] In this embodiment, a display device of one form of the present invention is described using FIGS. 18 and 19.

[0314] [Example of Pixel Circuit Configuration]

[0315] First, an example of the configuration of a pixel circuit having a display device will be explained using FIG. 18.

[0316] A display device of one embodiment of the present invention has a first pixel circuit having a light-receiving device and a second pixel circuit having a light-emitting device in a display portion. The first pixel circuit and the second pixel circuit are each arranged in a matrix.

[0317] An example of a first pixel circuit having a light receiving device is shown in (A) of FIG. 18, and an example of a second pixel circuit having a light emitting device is shown in (B) of FIG. 18.

[0318] The first pixel circuit (PIX1) shown in (A) of FIG. 18 has a light receiving device (PD), a transistor (M1), a transistor (M2), a transistor (M3), a transistor (M4), and a capacitance element (C1). Here, an example is shown in which a photodiode is used as the light receiving device (PD).

[0319] The cathode of the photodetector (PD) is electrically connected to the wiring (V1), and the anode is electrically connected to one of the source and drain of the transistor (M1). The gate of the transistor (M1) is electrically connected to the wiring (TX), and the other of the source and drain is electrically connected to one electrode of the capacitance element (C1), one of the source and drain of the transistor (M2), and the gate of the transistor (M3). The gate of the transistor (M2) is electrically connected to the wiring (RES), and the other of the source and drain is electrically connected to the wiring (V2). One of the source and drain of the transistor (M3) is electrically connected to the wiring (V3), and the other of the source and drain is electrically connected to one of the source and drain of the transistor (M4). The gate of the transistor (M4) is electrically connected to the wiring (SE), and the other of the source and drain is electrically connected to the wiring (OUT1).

[0320] A positive potential is supplied to each of the wirings (V1), (V2), and (V3). When the photodetector device (PD) is driven in reverse bias, a potential lower than that of wiring (V1) is supplied to wiring (V2). Transistor (M2) is controlled by a signal supplied to wiring (RES) and has the function of resetting the potential of the node connected to the gate of transistor (M3) to the potential supplied to wiring (V2). Transistor (M1) is controlled by a signal supplied to wiring (TX) and has the function of controlling the timing of changing the potential of the node according to the charge generated in the photodetector device (PD). Transistor (M3) functions as an amplification transistor that performs an output according to the potential of the node. Transistor (M4) is controlled by a signal supplied to wiring (SE) and functions as a selector transistor for reading the output according to the potential of the node to an external circuit connected to wiring (OUT1).

[0321] The second pixel circuit (PIX2) shown in (B) of FIG. 18 has a light-emitting device (EL), a transistor (M5), a transistor (M6), a transistor (M7), and a capacitance element (C2). Here, an example is shown in which a light-emitting diode is used as the light-emitting device (EL). In particular, it is preferable to use an organic EL device as the light-emitting device (EL).

[0322] The gate of transistor (M5) is electrically connected to the wiring (VG), one of the source and drain is electrically connected to the wiring (VS), and the other of the source and drain is electrically connected to one electrode of the capacitive element (C2) and the gate of transistor (M6). One of the source and drain of transistor (M6) is electrically connected to the wiring (V4), and the other is electrically connected to the anode of the light-emitting device (EL) and one of the source and drain of transistor (M7). The gate of transistor (M7) is electrically connected to the wiring (MS), and the other of the source and drain is electrically connected to the wiring (OUT2). The cathode of the light-emitting device (EL) is electrically connected to the wiring (V5).

[0323] A positive potential is supplied to the wiring (V4) and wiring (V5), respectively. The anode side of the light-emitting device (EL) can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor (M5) is controlled by a signal supplied to the wiring (VG) and functions as a selection transistor to control the selection state of the second pixel circuit (PIX2). Additionally, the transistor (M6) functions as a driving transistor that controls the current flowing through the light-emitting device (EL) according to the potential supplied to its gate. When the transistor (M5) is in a conducting state, the potential supplied to the wiring (VS) is supplied to the gate of the transistor (M6), and the luminous brightness of the light-emitting device (EL) can be controlled according to that potential. The transistor (M7) is controlled by a signal supplied to the wiring (MS) and has the function of outputting the potential between the transistor (M6) and the light-emitting device (EL) to the outside through the wiring (OUT2).

[0324] The wiring (V1) electrically connected to the cathode of the light receiving device (PD) and the wiring (V5) electrically connected to the cathode of the light emitting device (EL) can be of the same layer and the same potential.

[0325] Here, it is preferable to apply transistors using a metal oxide (oxide semiconductor) to the semiconductor layer where the channel is formed, to all of the transistors (M1), (M2), (M3), and (M4) of the first pixel circuit (PIX1) and the transistors (M5), (M6), and (M7) of the second pixel circuit (PIX2). By doing so, the power consumption of the display device can be reduced.

[0326] Alternatively, for all transistors (M1) to (M7), it is preferable to use silicon transistors in the semiconductor layer where the channel is formed. This enables high-speed operation of the circuit.

[0327] By using only one type of transistor for the display device, the manufacturing process of the display device can be reduced, and the yield can be increased.

[0328] Alternatively, one or more to six transistors among transistors (M1) to (M7) may be made of an oxide semiconductor, and the remaining transistors may be made of silicon. Below, a case in which both an oxide semiconductor transistor and a low-temperature polysilicon transistor are used will be described.

[0329] It is preferable to apply a transistor using an oxide semiconductor to each of the transistors (M1 and M2) of the first pixel circuit (PIX1) in which a channel is formed.

[0330] The semiconductor layer of the transistor (M1 and M2) preferably has, for example, indium, M (M is one or more types selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc, respectively. In particular, it is preferable that M is one or more types selected from aluminum, gallium, yttrium, and tin.

[0331] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer.

[0332] For metal oxides that can be used in the semiconductor layer, refer to the description of Embodiment 1.

[0333] A transistor using an oxide semiconductor, which has a wider band gap and lower carrier density than silicon, can achieve a very low off-current. Therefore, because the off-current is low, the charge accumulated in the capacitance element connected in series with the transistor can be maintained for a long period of time. Therefore, it is particularly desirable to use a transistor with an oxide semiconductor applied to each of the transistors (M1 and M2) connected in series with the capacitance element (C1). By applying a transistor having an oxide semiconductor as the transistors (M1 and M2), the potential maintained at the gate of the transistor (M3) based on the charge generated in the photodetector (PD) can be prevented from leaking through the transistor (M1) or the transistor (M2).

[0334] For example, when imaging using a global shutter method, the period from when the charge accumulation operation ends until the read operation begins (charge retention period) varies depending on the pixel. When capturing an image with a uniform number of gradations, ideally, an output signal having the same potential height is obtained at all pixels. However, if the length of the charge retention period differs from row to row, and the charge accumulated at the node of the pixel in each row leaks over time, the potential of the pixel output signal varies from row to row, and image data with a different number of gradations is obtained from row to row. Therefore, by applying a transistor having an oxide semiconductor as the transistor (M1 and M2), the change in the potential of the node can be reduced. In other words, even when performing imaging using a global shutter method, the change in the gradation of the image data caused by the difference in charge retention periods can be suppressed to a small extent, and the quality of the captured image can be improved.

[0335] On the other hand, it is preferable to apply a transistor using low-temperature polysilicon in the semiconductor layer to the transistor (M3) of the first pixel circuit (PIX1). A transistor using low-temperature polysilicon in the semiconductor layer can achieve higher field-effect mobility than a transistor using oxide semiconductor, and thus has superior driving capability and current capability. Therefore, the transistor (M3) can operate faster compared to transistors (M1 and M2). By using low-temperature polysilicon in the semiconductor layer of the transistor (M3), output according to a minute potential based on the amount of light received by the light receiving device (PD) can be rapidly performed to the transistor (M4).

[0336] That is, in the first pixel circuit (PIX1), the transistors (M1 and M2) have low leakage current and the transistor (M3) has high driving capability, so the minute potential read from the light receiving device (PD) is not leaked and the reading can be performed at high speed.

[0337] Since the transistor (M4) of the first pixel circuit (PIX1) functions as a switch that flows the output from the transistor (M3) to the wiring (OUT1), unlike the transistors (M1) and (M3), a small off-current and high-speed operation are not necessarily required. Therefore, the semiconductor layer of the transistor (M4) may be low-temperature polysilicon or oxide semiconductor.

[0338] In addition, in the second pixel circuit (PIX2) of FIG. 18 (B), transistors (M5) to (M7) may use transistors in which low-temperature polysilicon is applied to the semiconductor in which the channel is formed, or transistors in which oxide semiconductor is applied. Also, as in the first pixel circuit (PIX1), a combination of transistors in which low-temperature polysilicon is used as the semiconductor layer and transistors in which oxide semiconductor is used as the semiconductor layer may be used.

[0339] In particular, for the transistor (M5) connected in series with the capacitance element (C2), it is preferable to use a transistor with an oxide semiconductor applied thereto.

[0340] In addition, in Figures 18 (A) and (B), the transistor is labeled as an n-channel transistor, but a p-channel transistor may also be used. Furthermore, the transistor is not limited to a single gate and may have additional back gates.

[0341] It is preferable that the transistor of the first pixel circuit (PIX1) and the transistor of the second pixel circuit (PIX2) be formed side by side on the same substrate. In particular, it is preferable to have a configuration in which the transistor of the first pixel circuit (PIX1) and the transistor of the second pixel circuit (PIX2) are mixed within a single area and arranged periodically.

[0342] In addition, it is desirable to provide one or more layers having either a transistor or a capacitance at a position overlapping with a light receiving device (PD) or a light emitting device (EL). By doing so, the effective occupied area of ​​each pixel circuit can be reduced, and a high-definition light receiving part or display part can be realized.

[0343] [Example of Display Device Configuration]

[0344] Next, an example of the configuration of a display device will be explained using FIG. 19.

[0345] The display unit (PIX) of FIG. 19 (A) may be a display unit described in Embodiment 1. Pixels are arranged in a matrix on the display unit (PIX), and the first pixel circuit (PIX1) of FIG. 18 (A) and the second pixel circuit (PIX2) of FIG. 18 (B) are arranged in a matrix. A gate driver (GD) and a source driver (SD) are electrically connected to the second pixel circuit (PIX2) of FIG. 18 (B) and supply a signal to the second pixel circuit (PIX2). A row selection driver (RD) and a read circuit (ROC) are electrically connected to the first pixel circuit (PIX1) of FIG. 18 (A) and supply a signal to the first pixel circuit (PIX1). The row selection driver (RD) is electrically connected to the wiring (SE) and wiring (RES) of the first pixel circuit (PIX1) of FIG. 18 (A). The read circuit (ROC) is electrically connected to the wiring (OUT1).

[0346] The row selection driver (RD) and the read circuit (ROC) are controlled by a controller. Additionally, the analog-to-digital converter (ADC) described later is also controlled by the same controller.

[0347] The display unit (PIX) shown in (A) of FIG. 19 has a transistor using low-temperature polysilicon as a semiconductor layer and a transistor using a metal oxide as a semiconductor layer.

[0348] On the other hand, for the circuit provided around the display unit (PIX) of FIG. 19 (A), high-speed driving is required rather than small off-current characteristics. Therefore, it is desirable to be composed of transistors using low-temperature polysilicon. Furthermore, since both p-type and n-type transistors can be fabricated through a series of fabrication processes using low-temperature polysilicon transistors, CMOS can be fabricated. Accordingly, since it is desirable for the amplifier circuit (AMP) electrically connected to the readout circuit (ROC), the analog-to-digital converter circuit (ADC) electrically connected to the amplifier circuit (AMP), and the controller to each be composed of CMOS, it is desirable to form them using transistors using low-temperature polysilicon.

[0349] That is, in addition to the display unit (PIX), gate driver (GD), source driver (SD), row selector driver (RD), and read circuit (ROC), the amplifier circuit (AMP), analog-to-digital converter circuit (ADC), and controller can all be formed on the same substrate through a series of fabrication processes. A digital signal is output from the analog-to-digital converter circuit (ADC).

[0350] Figure 19 (B) illustrates an example of a panel in which the display unit (PIX), gate driver (GD), source driver (SD), row select driver (RD), and read circuit (ROC) are all formed using transistors with metal oxide in the channel. An analog signal is output from the read circuit (ROC). In the case of transistors with metal oxide in the channel, it is difficult to form both the n-type and p-type transistors using the same semiconductor material compared to transistors using silicon. That is, it is difficult to fabricate CMOS compared to transistors using silicon. Therefore, it is preferable to provide the amplifier circuit (AMP), analog-to-digital converter circuit (ADC), and controller—which are preferably composed of CMOS—on the same substrate as the display unit (PIX), and to provide the amplifier circuit (AMP) and analog-to-digital converter circuit (ADC) by connecting separately manufactured IC chips, etc.

[0351] As shown in (A) of FIG. 19, by configuring all peripheral circuits of the display unit (PIX) with transistors using low-temperature polysilicon, the panel can be provided at a lower cost compared to the configuration of (B) of FIG. 19. By using an external IC chip as shown in (B) of FIG. 19, component costs and mounting costs can be reduced compared to the case where an amplifier circuit (AMP), an analog-to-digital converter circuit (ADC), and a controller are prepared.

[0352] As described above, a display device of one embodiment of the present invention has a transistor using low-temperature polysilicon in a semiconductor layer. Accordingly, it becomes easy to provide various circuits composed of CMOS circuits on the same substrate as the display unit. This allows for the simplification of external circuits mounted on the display device, thereby reducing component costs and mounting costs. Alternatively, a display device of one embodiment of the present invention has a transistor using an oxide semiconductor in a semiconductor layer. This allows for the reduction of power consumption of the display device.

[0353] Alternatively, a display device of one embodiment of the present invention has two types of transistors: a transistor using an oxide semiconductor in the semiconductor layer and a transistor using low-temperature polysilicon in the semiconductor layer. Accordingly, the material of the semiconductor layer can be changed according to the function required of the transistor. In addition, since the device has a transistor using LTPS in the semiconductor layer, it becomes easy to provide various circuits composed of CMOS circuits on the same substrate as the display unit. As a result, the external circuits mounted on the display device can be simplified, thereby reducing component costs and mounting costs.

[0354] This embodiment can be appropriately combined with other embodiments.

[0355] (Embodiment 3)

[0356] In this embodiment, an electronic device of one form of the present invention is described using FIGS. 20 to 22.

[0357] The electronic device of the present embodiment has a display device of one form of the present invention. For example, a display device of one form of the present invention can be applied to the display portion of the electronic device. Since the display device of one form of the present invention has a function of detecting light, it can perform biometric authentication on the display portion or detect touch or near touch. By doing so, the functionality or convenience of the electronic device can be enhanced.

[0358] Examples of electronic devices include, for instance, televisions, desktop or laptop personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices having relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, and sound playback devices.

[0359] The electronic device of the present embodiment may have a sensor (including a function for measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, longitude, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared radiation).

[0360] The electronic device of the present embodiment may have various functions. For example, it may have a function of displaying various information (still images, video, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data recorded on a recording medium.

[0361] The electronic device (6500) illustrated in (A) of FIG. 20 is a portable information terminal that can be used as a smartphone.

[0362] The electronic device (6500) has a housing (6501), a display unit (6502), a power button (6503), a button (6504), a speaker (6505), a microphone (6506), a camera (6507), and a light source (6508), etc. The display unit (6502) has a touch panel function.

[0363] A display device of one form of the present invention can be applied to the display unit (6502).

[0364] Figure 20 (B) is a schematic cross-sectional view including the end of the housing (6501) on the side of the microphone (6506).

[0365] A transparent protective member (6510) is provided on the display side of the housing (6501), and a display panel (6511), an optical member (6512), a touch sensor panel (6513), a printed circuit board (6517), a battery (6518), etc. are arranged within the space enclosed by the housing (6501) and the protective member (6510).

[0366] A display panel (6511), an optical member (6512), and a touch sensor panel (6513) are fixed to the protective member (6510) by an adhesive layer (not shown).

[0367] A portion of the display panel (6511) is folded in an area outside the display portion (6502), and an FPC (6515) is connected to this folded portion. An IC (6516) is mounted on the FPC (6515). The FPC (6515) is connected to a terminal provided on the printed circuit board (6517).

[0368] A flexible display of one form of the present invention can be applied to the display panel (6511). Therefore, a very lightweight electronic device can be realized. In addition, since the display panel (6511) is very thin, a large capacity battery (6518) can be installed while keeping the thickness of the electronic device low. Furthermore, by folding a part of the display panel (6511) and placing a connection part with an FPC (6515) on the back side of the pixel portion, a slim bezel electronic device can be realized.

[0369] An example of a television device is illustrated in (A) of FIG. 21. The television device (7100) is provided with a display unit (7000) in a housing (7101). Here, a configuration is illustrated in which the housing (7101) is supported by a stand (7103).

[0370] A display device of one form of the present invention can be applied to the display unit (7000).

[0371] The television device (7100) illustrated in (A) of FIG. 21 can be operated by an operation switch having a housing (7101) or by a separate remote controller (7111). Alternatively, a touch sensor may be provided on the display unit (7000), or the television device (7100) may be operated by touching the display unit (7000) with a finger or the like. The remote controller (7111) may have a display unit that displays information output from the remote controller (7111). Channels and volume can be operated by the operation keys or touch panel of the remote controller (7111), and images displayed on the display unit (7000) can be operated.

[0372] Additionally, the television device (7100) is configured to include a receiver and a modem, etc. General television broadcasts can be received through the receiver. Furthermore, by connecting to a communication network via wired or wireless means through the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication can be performed.

[0373] An example of a notebook-type personal computer is illustrated in (B) of FIG. 21. The notebook-type personal computer (7200) has a housing (7211), a keyboard (7212), a pointing device (7213), an external connection port (7214), etc. A display unit (7000) is provided in the housing (7211).

[0374] A display device of one form of the present invention can be applied to the display unit (7000).

[0375] An example of digital signage is illustrated in (C) and (D) of Fig. 21.

[0376] The digital signage (7300) illustrated in (C) of FIG. 21 has a housing (7301), a display unit (7000), and a speaker (7303), etc. Additionally, it may have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, etc.

[0377] (D) of FIG. 21 is a digital signage (7400) provided on a cylindrical column (7401). The digital signage (7400) has a display (7000) provided along the curved surface of the column (7401).

[0378] In (C) and (D) of FIG. 21, a display device of one form of the present invention can be applied to the display unit (7000).

[0379] The wider the display section (7000), the more information can be provided at once. Additionally, the wider the display section (7000), the easier it is to catch people's eyes, and, for example, the more effective the promotion of the advertisement can be.

[0380] By applying a touch panel to the display unit (7000), it is desirable not only to display images or videos on the display unit (7000) but also to allow the user to operate it intuitively. In addition, when used for the purpose of providing information such as route information or traffic information, usability can be enhanced through intuitive operation.

[0381] In addition, as illustrated in (C) and (D) of FIG. 21, it is preferable that the digital signage (7300) or digital signage (7400) be connected via wireless communication with an information terminal (7311) or information terminal (7411), such as a smartphone owned by the user. For example, information about an advertisement displayed on the display unit (7000) can be displayed on the screen of the information terminal (7311) or information terminal (7411). In addition, the display of the display unit (7000) can be switched by operating the information terminal (7311) or information terminal (7411).

[0382] Additionally, a game can be executed on the digital signage (7300) or digital signage (7400) using the screen of the information terminal (7311) or the information terminal (7411) as a control means (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0383] The electronic device illustrated in (A) to (F) of FIG. 22 has a housing (9000), a display unit (9001), a speaker (9003), an operating key (9005) (including a power switch or an operating switch), a connection terminal (9006), a sensor (9007) (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, longitude, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, smell, or infrared radiation), a microphone (9008), etc.

[0384] The electronic device illustrated in (A) to (F) of FIG. 22 has various functions. For example, it may have a function of displaying various information (still images, video, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing by various software (programs), a wireless communication function, and a function of reading and processing programs or data recorded on a recording medium. Furthermore, the functions of the electronic device are not limited to these and may have various functions. The electronic device may have multiple display units. Additionally, the electronic device may be provided with a camera, etc., and may have a function of capturing still images or video and storing them on a recording medium (an external recording medium or a recording medium built into the camera), and a function of displaying the captured images on a display unit.

[0385] Detailed information regarding the electronic device illustrated in (A) to (F) of FIG. 22 will be explained below.

[0386] FIG. 22 (A) is a perspective view illustrating a portable information terminal (9101). The portable information terminal (9101) can be used, for example, as a smartphone. Additionally, the portable information terminal (9101) may be provided with a speaker (9003), a connection terminal (9006), a sensor (9007), etc. Additionally, the portable information terminal (9101) may display text or image information on its multiple surfaces. FIG. 22 (A) illustrates an example in which three icons (9050) are displayed. Additionally, information (9051) represented by a dashed rectangle may be displayed on another surface of the display unit (9001). Examples of information (9051) include notifications of incoming calls such as email, SNS, or phone calls, the subject of the email or SNS, the sender's name, date and time, time, remaining battery level, and antenna reception strength. Alternatively, icons (9050), etc., may be displayed at the location where the information (9051) is displayed.

[0387] FIG. 22 (B) is a perspective view illustrating a portable information terminal (9102). The portable information terminal (9102) has the function of displaying information on three or more sides of the display unit (9001). Here, an example is shown in which information (9052), information (9053), and information (9054) are displayed on different sides. For example, while the portable information terminal (9102) is stored in the chest pocket of clothing, the user may check the information (9053) displayed at a position visible from above the portable information terminal (9102). The user can check the display without taking the portable information terminal (9102) out of the pocket and, for example, decide whether to answer a call.

[0388] FIG. 22 (C) is a perspective view illustrating a wristwatch-type portable information terminal (9200). The portable information terminal (9200) can be used, for example, as a smartwatch. Additionally, the display unit (9001) is provided with a curved display surface and can perform display along the curved display surface. Additionally, the portable information terminal (9200) can make hands-free calls, for example, by communicating with a headset capable of wireless communication. Additionally, the portable information terminal (9200) can exchange data with other information terminals or charge via a connection terminal (9006). Additionally, the charging operation may be performed by wireless power supply.

[0389] FIGS. 22 (D) to (F) are perspective views illustrating a foldable portable information terminal (9201). Additionally, FIGS. 22 (D) is a perspective view of the portable information terminal (9201) in an unfolded state, FIGS. 22 (F) is a perspective view of the portable information terminal (9201) in a folded state, and FIGS. 22 (E) is a perspective view of the state in progress of changing from one side of FIGS. 22 (D) and (F) to the other. The portable information terminal (9201) has excellent portability in the folded state and excellent visibility of the display due to the seamless and wide display area in the unfolded state. The display unit (9001) of the portable information terminal (9201) is supported by three housings (9000) connected by a hinge (9055). For example, the display unit (9001) can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0390] This embodiment can be appropriately combined with other embodiments. Explanation of the symbols

[0391] C1: Capacitive element, C2: Capacitive element, L1: Shortest distance, L2: Shortest distance, L3: Thickness, L4: Total, M1: Transistor, M2: Transistor, M3: Transistor, M4: Transistor, M5: Transistor, M6: Transistor, M7: Transistor, OUT1: Wiring, OUT2: Wiring, PIX1: Pixel circuit, PIX2: Pixel circuit, V1: Wiring, V2: Wiring, V3: Wiring, V4: Wiring, V5: Wiring, 10: Display, 10A: Display, 10B: Display, 10C: Display, 10D: Display, 10E: Display, 10F: Display, 10G: Display, 10H: Display, 10J: Display, 10K: Display, 10L: Display, 10M: Display, 10N: Display, 10P: Display, 10Q: Display device, 21: Emitting light, 21B: Light, 21G: Light, 21R: Light, 22: Light, 23: Light, 23a: Stray light, 23b: Stray light, 23c: Stray light, 23d: Stray light, 24: Reflected light, 41: Transistor, 42: Transistor, 42B: Transistor, 42G: Transistor, 42R: Transistor, 50A: Display device, 50B: Display device, 51: Substrate, 52: Finger, 53: Layer having a light-receiving device, 55: Layer having a transistor, 57: Layer having a light-emitting device, 59: Substrate, 100A: Display device, 100B: Display device, 100C: Display device, 110: Light-receiving device, 112: Common layer, 113: Emitting layer, 114: Common layer, 115: Common Electrode, 116: Protective layer, 116a: Inorganic insulating layer, 116b: Organic insulating layer, 116c: Inorganic insulating layer, 142: Adhesive layer, 143: Space, 146: Lens array, 149: Lens, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 156: Adhesive layer, 157: Insulating layer, 158: Light-shielding layer, 159: Resin layer, 159p: Aperture, 160: Void, 162: Display part, 164: Circuit, 165: Wiring, 166: Conductive layer,167: Conductive layer, 168: Conductive layer, 169B: Conductive layer, 169G: Conductive layer, 169R: Conductive layer, 172: FPC, 173: IC, 181: Pixel electrode, 182: Buffer layer, 183: Active layer, 184: Buffer layer, 190: Light-emitting device, 190B: Light-emitting device, 190G: Light-emitting device, 190R: Light-emitting device, 191: Pixel electrode, 191B: Pixel electrode, 191G: Pixel electrode, 191R: Pixel electrode, 192: Buffer layer, 193: Light-emitting layer, 193B: Light-emitting layer, 193G: Light-emitting layer, 193R: Light-emitting layer, 194: Buffer layer, 197: Optical adjustment layer, 197B: Optical adjustment layer, 197G: Optical adjustment layer, 201: Transistor, 203: Transistor, 204: Connection, 205: Transistor, 206: Transistor, 207: Transistor, 208: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214: Insulating layer, 214a: Insulating layer, 214b: Insulating layer, 215: Insulating layer, 216: Barrier, 217: Barrier, 219a: Light-shielding layer, 219b: Spacer, 219c: Sidewall, 220: Gap, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 230: Region, 231: Semiconductor layer, 231i: Channel forming region, 231n: Low resistance region, 242: Connection layer, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote controller, 7200: Laptop-type personal computer, 7211: Housing, 7212: Keyboard,7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

Claim 1 As a display device, it has a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, and the second pixel circuit has a light-emitting device, wherein the light-receiving device has a first pixel electrode, an active layer, and a common electrode, and the light-emitting device has a second pixel electrode, a light-emitting layer, and the common electrode, wherein the active layer is located on the first pixel electrode, wherein the active layer has a first organic compound, wherein the light-emitting layer is located on the second pixel electrode, wherein the common electrode is located on the active layer and the light-emitting layer, wherein the light-emitting layer has a second organic compound different from the first organic compound, wherein the common electrode has a portion overlapping with the first pixel electrode via the active layer and a portion overlapping with the second pixel electrode via the light-emitting layer, wherein the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in a semiconductor layer, and wherein a resin layer, a light-shielding layer, and a substrate are placed on the common electrode. A display device having, wherein at least a portion of the light passing through the substrate is incident on the light receiving device without passing through the resin layer. Claim 2 As a display device, it has a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, and the second pixel circuit has a light-emitting device, wherein the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, and the light-emitting device has a second pixel electrode, the common layer, a light-emitting layer, and the common electrode, wherein the active layer is located on the first pixel electrode, the active layer has a first organic compound, the light-emitting layer is located on the second pixel electrode, the common electrode is located on the active layer and the light-emitting layer, and the light-emitting layer has a second organic compound different from the first organic compound, and the common electrode has a portion that overlaps with the first pixel electrode via the active layer and a portion that overlaps with the second pixel electrode via the light-emitting layer, and the common layer is located on the first pixel electrode and on the second pixel electrode, and the common layer has a portion that overlaps with the active layer and the light-emitting layer and A display device having an overlapping portion, wherein the first transistor has low-temperature polysilicon in the semiconductor layer and the second transistor has a metal oxide in the semiconductor layer, and has a resin layer, a light-shielding layer, and a substrate on the common electrode, wherein at least a portion of the light passing through the substrate is incident on the light-receiving device without passing through the resin layer. Claim 3 A display device according to claim 2, wherein the common layer has a layer that functions as a hole injection layer of the light-emitting device. Claim 4 A display device according to claim 2 or 3, wherein the common layer has a layer that functions as a hole transport layer of the light-emitting device. Claim 5 A display device according to claim 2 or 3, wherein the common layer has a layer that functions as an electron transport layer of the light-emitting device. Claim 6 A display device according to claim 2 or 3, wherein the common layer has a layer that functions as an electron injection layer of the light-emitting device. Claim 7 A display device according to claim 1 or 2, wherein the second pixel circuit further comprises a third transistor, and the third transistor comprises low-temperature polysilicon on a semiconductor layer. Claim 8 A display device according to claim 1 or 2, wherein the second pixel circuit further comprises a third transistor, and the third transistor comprises a metal oxide on a semiconductor layer. Claim 9 A display device according to claim 1 or 2, wherein the resin layer and the light-shielding layer are each located between the common electrode and the substrate, the resin layer has an opening that overlaps with the light-receiving device, the resin layer has a portion that overlaps with the light-emitting device, and the light-shielding layer has a portion located between the common electrode and the resin layer. Claim 10 In claim 9, the light-blocking layer covers at least a portion of the opening and at least a portion of the side of the resin layer exposed at the opening, a display device. Claim 11 A display device according to claim 1 or 2, wherein the resin layer and the light-shielding layer are each located between the common electrode and the substrate, the resin layer is provided in an island shape and has a portion overlapping with the light-emitting device, and the light-shielding layer has a portion located between the common electrode and the resin layer. Claim 12 In claim 11, the display device wherein the light-blocking layer covers at least a portion of the side of the resin layer. Claim 13 A display device according to claim 10, further comprising an adhesive layer, wherein the adhesive layer is located between the common electrode and the substrate, and the resin layer and the light-blocking layer are each located between the adhesive layer and the substrate, and the adhesive layer has a first portion overlapping with the light-receiving device and a second portion overlapping with the light-emitting device, wherein the first portion is thicker than the second portion. Claim 14 In claim 1 or 2, the display device is a display device having flexibility. Claim 15 A display module having a connector or an integrated circuit, wherein the display device described in claim 1 or 2 is a display module. Claim 16 An electronic device having at least one of a display module described in claim 15, an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button. Claim 17 A display device according to claim 12, further comprising an adhesive layer, wherein the adhesive layer is located between the common electrode and the substrate, and the resin layer and the light-blocking layer are each located between the adhesive layer and the substrate, and the adhesive layer has a first portion overlapping with the light-receiving device and a second portion overlapping with the light-emitting device, wherein the first portion is thicker than the second portion.

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