multi-slicing device for cutting CVD SiC ingot

Abstract

The present invention comprises: a base; a lifting part provided to be vertically movable on the base; an index part mounted on the lifting part and rotatably supporting a CVD SiC ingot to be cut; and a cutting part disposed on the upper part of the index part and slicing the CVD SiC ingot mounted on the index part into multiple pieces using a wire; wherein the index part is characterized by changing the contact area between the CVD SiC ingot and the wire.

Description

Technology Field

[0001] The present invention relates to a multi-slicing device configured to slice a CVD SiC ingot used to manufacture electrode plates for semiconductors or secondary batteries to a set thickness. Background Technology

[0002] Ingots used to manufacture electrode plates for semiconductors or secondary batteries need to be sliced ​​to a thickness set by a slicing device.

[0003] Conventional slicing devices cut the ingot using only one cutting member that reciprocates in the up / down direction by the drive of a drive unit, so there is a problem that it takes a long time to cut the ingot.

[0004] In addition, as mentioned above, conventional slicing devices cut the ingot using only one cutting member, so the cutting member wears out easily, and consequently, there is a problem that the ingot cannot be cut uniformly.

[0005] Therefore, recently, a slicing device that cuts an ingot into multiple pieces at once using a wire has been developed and is being used.

[0006] As described above, the slicing device using a wire has a configuration that transports a wire wound at a certain distance on a rotating drum at high speed, and has a configuration that moves an ingot fixedly mounted on a lifting device between a pair of rotating drums.

[0007] As described above, when an ingot fixedly mounted on a lifting device moves between a pair of rotating drums, it can be sliced ​​into multiple pieces at once by a plurality of wires placed between the pair of rotating drums.

[0008] Conventional wire-based slicing devices have a configuration in which an ingot fixedly mounted on a lifting device enters only in a certain direction toward a wire that is transported only in a straight direction between a pair of rotating drums, so the area where the wire and the ingot first come into contact is very limited, which causes the cutting time of the ingot to still be long.

[0009] In order to solve the above problems, a multi-slicing device was proposed configured to alternately move a pair of rotating drums wound with wire in the up and down directions so that the wire placed between the pair of rotating drums could slice the ingot while performing a seesaw motion; however, it still fails to reduce the cutting time of high-strength materials such as CVD SiC ingots, and instead, there is a problem in that the slicing time increases as the contact area between the wire and the CVD SiC ingot gradually increases.

[0010] In other words, in the case of CVD SiC ingots currently developed and commercialized, there is a problem in that more than five times the processing time is required when processing with a conventional multi-slicing device because the strength is higher and the structure is tougher compared to conventional SiC ingots.

[0011] For reference, when sapphire ingots and CVD SiC ingots of the same diameter are cut using a conventional wire slicing device, the sapphire ingot requires about 10 hours of processing time and the CVD SiC ingot requires about 48 hours of processing time.

[0012] Accordingly, the applicant developed the present invention to solve the above-mentioned problems, and a related prior art document is the 'wire slicing device' of Korean Patent Publication No. 10-2011-0135611. The problem to be solved

[0013] The present invention aims to solve the above-mentioned problems by providing a multi-slicing device for cutting a CVD SiC ingot, configured such that a wire in contact with the surface of the CVD SiC ingot moves in a straight direction and the CVD SiC ingot is rotated at a predetermined angle, thereby allowing a local portion of the CVD SiC ingot to be intensively cut by the wire. means of solving the problem

[0014] The present invention comprises: a base; a lifting part provided to be vertically movable on the base; an index part mounted on the lifting part and rotatably supporting a CVD SiC ingot to be cut; and a cutting part disposed on the upper part of the index part and slicing the CVD SiC ingot mounted on the index part into multiple pieces using a wire; wherein the index part can change the contact area between the CVD SiC ingot and the wire.

[0015] Additionally, the cutting section may include a pair of rotating drums arranged at a predetermined distance from each other; and pitch rollers provided at one end and the other end in the longitudinal direction of the rotating drums, respectively, on which a plurality of the wires are wound.

[0016] Additionally, the index portion may include a pair of vacuum chucks arranged at a predetermined distance from each other along the longitudinal direction of the rotating drum and vacuum adsorbing the CVD SiC ingot; and an index head connected to the vacuum chuck and receiving rotational power to rotate the vacuum chuck and the CVD SiC ingot.

[0017] Additionally, it may include a drive motor that generates power to rotate the pair of index heads; a main shaft that rotates by the drive of the drive motor and is positioned via the bottom of the lifting unit; a first pulley provided at one end in the longitudinal direction of the main shaft; a second pulley connected to the first pulley via a belt and provided on the rotation axis of the index head positioned on one side of the pair of index heads; a third pulley provided at the other end in the longitudinal direction of the main shaft; and a fourth pulley connected to the third pulley via a belt and provided on the rotation axis of the index head positioned on the other side of the pair of index heads.

[0018] Additionally, one side of the lifting member is exposed to the upper part of the base to support the pair of index heads, and the other side of the lifting member may be positioned in the internal space of a casing placed on the upper part of the base.

[0019] In addition, the other side of the lifting member may be connected to a nut that moves along a screw shaft arranged vertically in the internal space of the casing.

[0020] In addition, a fixing block is provided on a part of the outer surface of the CVD SiC ingot adsorbed to the vacuum chuck, and the fixing block can prevent the CVD SiC ingot, which has been sliced ​​to a predetermined thickness by the wire, from being separated from the vacuum chuck.

[0021] In addition, the diameter of the CVD SiC ingot mounted on the index portion may be 4 inches or more and 8 inches or less, and the thickness of the CVD SiC ingot may be 3 mm or more and 20 mm or less. Effects of the invention

[0022] A multi-slicing device for cutting a CVD SiC ingot according to one embodiment of the present invention can selectively vary the area in contact with the wire by rotating the CVD SiC ingot at a predetermined angle, thereby allowing for concentrated cutting at one point among the outer surface formed by the CVD SiC ingot, and then concentrated cutting at another point, so that high-strength CVD SiC ingots can be sliced ​​easily and quickly.

[0023] In addition, the multi-slicing device for cutting a CVD SiC ingot according to one embodiment of the present invention can vary the contact area between the CVD SiC ingot and the wire while maintaining a constant amount of contact between the CVD SiC ingot and the wire even as the slicing operation proceeds gradually, thereby preventing wear of the wire by maintaining a constant contact area between the wire and the CVD SiC ingot, and furthermore, can improve processing precision and product quality by accurately slicing the CVD SiC ingot to a set thickness. Brief explanation of the drawing

[0024] FIG. 1 is a front view of a multi-slicing device for cutting a CVD SiC ingot according to one embodiment of the present invention. FIG. 2 is a side view of the multi-slicing device shown in FIG. 1. FIG. 3 is an enlarged view showing the configuration of the index section illustrated in FIG. 2. FIG. 4 is a front view of a CVD SiC ingot rotated at a predetermined angle by an index portion according to an embodiment of the present invention. Specific details for implementing the invention

[0025] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described in detail below together with the accompanying drawings.

[0026] However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms, and these embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0027] Hereinafter, a multi-slicing apparatus for cutting a CVD SiC ingot according to an embodiment of the present invention is described in detail with reference to FIGS. 1 to 4. In describing the present invention, specific descriptions of related known functions or configurations are omitted to avoid obscuring the gist of the invention.

[0028] FIG. 1 is a front view of a multi-slicing device for cutting a CVD SiC ingot according to an embodiment of the present invention, FIG. 2 is a side view of the multi-slicing device shown in FIG. 1, FIG. 3 is an enlarged view showing the configuration of the indexing section shown in FIG. 2, and FIG. 4 is a front view of a CVD SiC ingot rotated at a predetermined angle by the indexing section according to an embodiment of the present invention.

[0029] A multi-slicing device (100) according to one embodiment of the present invention is characterized by being configured to allow concentrated cutting of a local portion of a CVD SiC ingot (1) with a wire (W) while changing the position of the CVD SiC ingot (1) at various angles, in the case of slicing a CVD SiC ingot (1) having a diameter of 4 inches or more and 8 inches or less and a thickness of 3 mm or more and 20 mm or less to a thickness of 0.7 mm to 1 mm or less.

[0030] As illustrated in FIGS. 1 to 4, a multi-slicing device (100) according to one embodiment of the present invention may include: a base (10); a lifting part (200) provided to be vertically movable on the base (10); an index part (300) mounted on the lifting part (200) and rotatably supporting a CVD SiC ingot (1) to be cut; and a cutting part (400) disposed on the upper part of the index part (300) and slicing the CVD SiC ingot (1) mounted on the index part (300) into multiple pieces using a wire (W).

[0031] The above base (10) can be provided on the ground of a workplace and can provide a space where a lifting section (200), an indexing section (300), and a cutting section (400) can be provided.

[0032] The above lifting unit (200) is a component that rises or falls along the height direction of the casing (C) provided on the upper surface of the base (10).

[0033] The lifting section (200) can be raised or lowered along the height direction of the casing (C) while supporting the index section (300), which will be described later, and the CVD SiC ingot (1) mounted on the index section (300).

[0034] For reference, as shown in FIG. 3, one side of the lifting unit (200) is exposed to the upper part of the base (10), and the vacuum chuck (310, 310') and index head (320, 320') of the index unit (300), which will be described later, may be disposed on the upper surface.

[0035] And, the other side of the lifting member (200) may be placed in the internal space of a casing (C) positioned on the upper part of the base (10). At this time, the other side of the lifting member (200) may be connected to a nut (230) that moves along a screw shaft (220) positioned vertically in the internal space of the casing (C).

[0036] For reference, the screw shaft (220) can be connected to a drive motor (210) positioned on the upper surface of the casing (C) via a known power transmission means, such as a belt and a pulley, as shown in FIG. 1. Accordingly, when the drive motor (210) is driven, the lifting unit (200) can be raised along the height direction of the casing (C) by the screw shaft (220) which rotates in the internal space of the casing (C).

[0037] The above cutting portion (400) can be positioned on the upper side of one surface of the casing (C).

[0038] That is, the cutting section (400) can be positioned above the aforementioned lifting section (200) and the index section (300) to be described later.

[0039] The cutting section (400) may include a pair of rotating drums (410) arranged at a predetermined distance from each other as shown in FIGS. 1 to 4; and a pitch roller (420) provided at each end in the longitudinal direction of the rotating drum (410) and on which a plurality of wires (W) are wound.

[0040] As shown in FIG. 1, a pair of rotating drums (410) are spaced apart from each other at a predetermined distance.

[0041] In the space between the pair of rotating drums (410), the wire (W) wound on the pitch roller (420) can be arranged in a straight direction.

[0042] And, the CVD SiC ingot (1) to be cut by the rising of the aforementioned lifting unit (200) can be placed in the space separated from the pair of rotating drums (410).

[0043] The rotating drum (410) is connected to a spindle that is rotated by a drive motor, and the spindle can be rotated by receiving power from another drive motor.

[0044] For reference, the configuration of rotating a spindle connected to a rotating drum (410) and circulating the wire (W) wound on the pitch roller (420) is a known configuration that can be easily implemented by a person skilled in the art, so its specific description is omitted in the specification of the present invention to prevent the gist of the invention from becoming ambiguous.

[0045] The pitch roller (420) can be provided on one side and the other side in the longitudinal direction of the rotating drum (410), as shown in FIGS. 2 and 3. That is, a pair can be provided on one rotating drum (410).

[0046] The pitch roller (420) rotates in conjunction with the rotating drum (410), and multiple strands of wire (W) can be wound around its circumference.

[0047] A pitch roller (420) provided on one side in the longitudinal direction of a rotating drum (410) can be positioned to correspond to a vacuum chuck (310) positioned on one side among a pair of vacuum chucks (310, 310') formed by an index part (300).

[0048] That is, when the CVD SiC ingot (1) enters the space between the pair of rotating drums (410) by driving the lifting unit (200), the multiple wires (W) that are circulating while wound on the pitch roller (420) can cut the CVD SiC ingot (1) mounted on the vacuum chuck (310) positioned on one side of the pair of vacuum chucks (310, 310') to a predetermined thickness.

[0049] And, the pitch roller (420) provided on the other side in the longitudinal direction of the rotating drum (410) can be positioned to correspond to the vacuum chuck (310') positioned on the other side among the pair of vacuum chucks (310, 310') that make up the index part (300).

[0050] That is, when the CVD SiC ingot (1) enters the space between the pair of rotating drums (410) by driving the lifting unit (200), the multiple wires (W) that are circulating while wound on the other side pitch roller (420) can cut the CVD SiC ingot (1) mounted on the vacuum chuck (310') positioned on the other side among the pair of vacuum chucks (310, 310') to a predetermined thickness.

[0052] The index portion (300) may include: a pair of vacuum chucks (310, 310') that are arranged at a predetermined distance from each other along the longitudinal direction of the rotating drum (410) as shown in FIGS. 1 to 3 and vacuum adsorb the CVD SiC ingot (1); and an index head (320, 320') that is connected to the vacuum chucks (310, 310') and receives rotational power to rotate the vacuum chucks (310, 310') and the CVD SiC ingot (1).

[0053] The index portion (300) configured as described above can change the contact area between the CVD SiC ingot (1) and the wire (W), as shown in FIG. 4.

[0054] The above vacuum chuck (310, 310') can be connected to a vacuum suction pump not shown and can vacuum adsorb one side of the CVD SiC ingot (1) to be sliced.

[0055] That is, one side of the above CVD SiC ingot (1) having a disc shape can be vacuum-adsorbed to a vacuum chuck (310, 310').

[0056] Among a pair of vacuum chucks (310, 310'), the CVD SiC ingot (1) adsorbed on the vacuum chuck (310) positioned on one side can be sliced ​​by a plurality of wires (W) that are circulated while wound on a pitch roller (420) on one side, as described above.

[0057] In addition, among a pair of vacuum chucks (310, 310'), the CVD SiC ingot (1) adsorbed on the vacuum chuck (310') positioned on the other side can be sliced ​​by a plurality of wires (W) that are circulated while wound on the other side pitch roller (420) as described above.

[0058] The index head (320, 320') is provided on the outer surface of an unillustrated rotation axis and can rotate in conjunction with the rotation of the rotation axis.

[0059] For reference, the index heads (320, 320') arranged at a predetermined distance from each other can have their spacing adjusted by the spacing adjustment handle (h) shown in FIG. 2. Accordingly, the spacing between the index heads (320, 320') and the vacuum chuck (310, 310') can be adjusted in correspondence with the thickness of the CVD SiC ingot (1).

[0060] The index section (300) configured as described above comprises, as illustrated in FIGS. 2 and 3, a drive motor (500) that generates power to rotate the pair of index heads (320, 320'); a main shaft (510) that is rotated by the drive of the drive motor (500) and is positioned via the bottom of the lifting section (200); a first pulley (520) provided at one end in the longitudinal direction of the main shaft (510); a second pulley (530) that is connected to the first pulley (520) via a belt and is provided on the rotation axis of the index head (320) positioned on one side of the pair of index heads (320, 320'); and a third pulley (540) provided at the other end in the longitudinal direction of the main shaft (510). and may further include a fourth pulley (550) connected to the third pulley (540) via a belt and provided on the rotation axis of the index head (320') positioned on the other side among the pair of index heads (320, 320').

[0061] The above drive motor (500) can be positioned on the other side of the casing (C) and generates power that can rotate the main shaft (510).

[0062] The main shaft (510) can be positioned through the internal space of the casing (C) and the lifting unit (200), and serves to transmit rotational power to the rotating shafts connected to the index heads (320, 320') respectively via pulleys and belts.

[0063] That is, when the main shaft (510) is rotated by the drive motor (500), the first pulley (520) provided at one end in the longitudinal direction of the main shaft (510) is rotated, and in conjunction with this, the second pulley (530) provided on the rotation axis of the index head (320) positioned on one side of the pair of index heads (320, 320') can be rotated.

[0064] Then, the index head (320) and vacuum chuck (310) positioned on one side and the CVD SiC ingot (1) adsorbed on the vacuum chuck (310) can be rotated.

[0065] Additionally, when the main shaft (510) is rotated by the drive motor (500), the third pulley (540) provided at the other end of the main shaft (510) in the longitudinal direction is rotated, and in conjunction with this, the third pulley (550) provided on the rotation axis of the index head (320') positioned on the other side among a pair of index heads (320, 320') can be rotated.

[0066] Then, the index head (320') and vacuum chuck (310') placed on the other side and the CVD SiC ingot (1) adsorbed on the vacuum chuck (320') can be rotated.

[0067] For reference, the index head (320, 320'), vacuum chuck (310, 310'), and CVD SiC ingot (1) can be rotated around the center of rotation of the rotation axis not only during the cutting process by the wire (W), but also when changing the contact area between the CVD SiC ingot (1) and the wire (W). That is, the drive motor (500) can be driven including both the process of slicing by the CVD SiC ingot (1) and the wire (W), and the case where the contact area between the CVD SiC ingot (1) and the wire (W) is changed while the slicing process is stopped.

[0068] As shown in FIG. 4, the CVD SiC ingot (1) can be rotated in one direction or the other at a predetermined angle by driving the drive motor (500), and accordingly, the contact area between the wire (W) placed between a pair of rotating drums (410) and the CVD SiC ingot (1) can be changed.

[0069] For example, as shown in FIG. 4(a), when the CVD SiC ingot (1) first comes into contact with the wire (W), it can be rotated by the index part (400) at an angle of about 270 degrees in the left / right direction with respect to the center of rotation of the index head (320, 320') constituting the index part (400).

[0070] Additionally, as shown in FIG. 4(b), as the slicing operation progresses, the lifting member (200) is raised so that the wire (W) can pass through the center of the CVD SiC ingot (1).

[0071] At this time, the CVD SiC ingot (1) can be rotated by the index part (400) at an angle of about 150 degrees in the left / right direction based on the center of rotation of the index head (320, 320') constituting the index part (400) to change the contact area with the wire (W).

[0072] And, as shown in Fig. 4 (c), as the slicing operation progresses, the lifting member (200) is raised so that the wire (W) can pass through the lower side of the CVD SiC ingot (1).

[0073] At this time, the CVD SiC ingot (1) can be rotated by the index part (400) at an angle of about 50 degrees in the left / right direction based on the center of rotation of the index head (320, 320') constituting the index part (400) to change the contact area with the wire (W).

[0074] If the above process is repeated, the CVD SiC ingot (1) can be sliced ​​to a set thickness.

[0075] As described above, the multi-slicing device (100) of the present invention enables slicing operations by rotating the CVD SiC ingot (1) at a predetermined angle using an index part (400), so that the amount of contact between the wire (W) and the CVD SiC ingot (1) can be maintained at a constant level even if the slicing operation proceeds gradually, and accordingly, there is an advantage of minimizing changes in the tension of the wire (W) and reducing the load applied to the wire (W).

[0076] In addition, even if the slicing process proceeds gradually, the local portion of the CVD SiC ingot (1) can be intensively cut while maintaining a constant amount of contact between the CVD SiC ingot (1) and the wire (W), and a pair of CVD SiC ingots (1) can be sliced ​​simultaneously, so there is an advantage of significantly shortening the slicing process compared to conventional methods.

[0077] Accordingly, the multi-slicing device (100) according to one embodiment of the present invention can not only significantly reduce the slicing time of a CVD SiC ingot (1) which takes a very long time to cut, but also increase the processing precision to improve the quality of the product.

[0078] Meanwhile, as shown in FIG. 4, a fixing block (b) may be provided on a part of the outer surface of the CVD SiC ingot (1) adsorbed on the vacuum chuck (310, 10').

[0079] The above fixing block (b) serves to prevent the CVD SiC ingot (1), which is sliced ​​to a predetermined thickness by the wire (W), from being separated from the vacuum chuck (310, 310').

[0080] The fixing block (b) can be bonded to a portion of the outer surface of the CVD SiC ingot (1) by a known adhesive, and as described above, prevents the CVD SiC ingots (1) that have been cut to a predetermined thickness by the wire (W) from coming off the vacuum chuck (310, 310'). That is, since the CVD SiC ingots (1) that have been cut to a predetermined thickness by the wire (W) have a portion of their outer surface connected by the fixing block (b), they do not come off the vacuum chuck (310, 310') even if they are completely sliced ​​by the wire (W).

[0081] Although specific embodiments according to the present invention have been described so far, it is obvious that various modifications are possible within the scope of the present invention.

[0082] Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims set forth below as well as equivalents thereof. Explanation of the symbols

[0083] 100 : Multi-slicing device 1 : Ingot 10 : Bass 200 : Lifting section 300 : Index section 310, 310' : Vacuum chuck 320, 320' : Index Head 400 : Cutting part 410 : Rotating drum 420 : Pitch roller 500 : Drive motor 510: Main shaft 520 : 1st Pulley 530 : Second Pulley 540 : Third Pulley 550 : 4th Pulley W : Wire C: Casing b : Fixed block

Claims

Claim 1 A base; a lifting unit configured to be vertically movable on the base; an indexing unit mounted on the lifting unit and rotatably supporting a CVD SiC ingot to be cut; a cutting unit disposed on the upper part of the indexing unit and slicing the CVD SiC ingot mounted on the indexing unit into multiple pieces using a wire; wherein the indexing unit is characterized by changing the contact area between the CVD SiC ingot and the wire; and the cutting unit comprises a pair of rotating drums arranged at a predetermined distance from each other; and pitch rollers respectively provided at one end and the other end in the longitudinal direction of the rotating drums, on which multiple wires are wound; wherein the indexing unit comprises a pair of vacuum chucks arranged at a predetermined distance from each other along the longitudinal direction of the rotating drums and vacuum adsorbing the CVD SiC ingot; A multi-slicing device for cutting a CVD SiC ingot, characterized by including: an index head connected to the vacuum chuck and receiving rotational power to rotate the vacuum chuck and the CVD SiC ingot. Claim 2 delete Claim 3 delete Claim 4 A multi-slicing device for cutting a CVD SiC ingot according to claim 1, comprising: a drive motor for generating power to rotate the pair of index heads; a main shaft that is rotated by the drive of the drive motor and is positioned via the bottom of the lifting part; a first pulley provided at one end in the longitudinal direction of the main shaft; a second pulley connected to the first pulley via a belt and provided on the rotation axis of the index head positioned on one side of the pair of index heads; a third pulley provided at the other end in the longitudinal direction of the main shaft; and a fourth pulley connected to the third pulley via a belt and provided on the rotation axis of the index head positioned on the other side of the pair of index heads. Claim 5 A multi-slicing device for cutting CVD SiC ingots according to claim 4, characterized in that one side of the lifting member is exposed to the upper part of the base to support the pair of index heads, and the other side of the lifting member is disposed in the internal space of a casing disposed on the upper part of the base. Claim 6 A multi-slicing device for cutting CVD SiC ingots according to claim 5, characterized in that the other side of the lifting member is connected to a nut that moves along a screw shaft arranged vertically in the internal space of the casing. Claim 7 A multi-slicing device for cutting a CVD SiC ingot according to claim 1, wherein a fixing block is provided on a part of the outer surface of the CVD SiC ingot adsorbed to the vacuum chuck, and the fixing block prevents the CVD SiC ingot sliced ​​to a predetermined thickness by the wire from being separated from the vacuum chuck. Claim 8 A multi-slicing device for cutting a CVD SiC ingot, characterized in that, in any one of claim 7, the diameter of the CVD SiC ingot mounted on the index portion is 4 inches or more and 8 inches or less, and the thickness of the CVD SiC ingot is 3 mm or more and 20 mm or less.

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