Deposition apparatus

Abstract

The deposition apparatus may include a gas injection unit comprising a plurality of linear nozzle sections arranged parallel along a first direction, and a substrate transfer unit that reciprocates a substrate along the first direction from below the gas injection unit. Each of the linear nozzle sections may include a gas supply section that supplies process gas and an electrode that extends in a second direction perpendicular to the first direction and injects the process gas supplied from the gas supply section into the substrate through a nozzle formed inside. The distance between the central part of the electrode and the substrate may differ from the distance between the two sides in the longitudinal direction of the electrode and the substrate.

Description

Technology Field

[0001] The present invention relates to a deposition apparatus. More specifically, the present invention relates to a deposition apparatus for depositing a thin film by spraying a process gas onto a target substrate. Background Technology

[0002] Flat panel displays are used as replacements for cathode ray tube displays due to their characteristics, such as lightweight and thin profiles. Representative examples of such flat panel displays include liquid crystal displays and organic light-emitting diode displays.

[0003] In manufacturing the above display device, chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes, which deposit a thin film by spraying a process gas onto the surface of a target substrate, and plasma enhanced chemical vapor deposition (PECVD) and plasma enhanced atomic layer deposition (PEALD) processes, which allow deposition to proceed in a plasma state by applying a high voltage while spraying a process gas, are utilized. Meanwhile, in the case of PECVD and PEALD processes, the uniformity of the thin film thickness may decrease depending on the plasma characteristics of the process gas material, and this is a problem that intensifies as the target substrate becomes larger. The problem to be solved

[0004] The objective of the present invention is to provide a deposition apparatus capable of depositing a thin film with a uniform thickness.

[0005] However, the present invention is not limited by the purposes described above and may be extended in various ways without departing from the spirit and scope of the invention. means of solving the problem

[0006] To achieve the objectives of the present invention as described above, a deposition apparatus according to exemplary embodiments of the present invention may include a gas injection unit comprising a plurality of linear nozzle sections arranged parallel along a first direction, and a substrate transfer unit that reciprocates a substrate along the first direction below the gas injection unit. Each of the linear nozzle sections may include a gas supply section that supplies process gas and an electrode that extends in a second direction perpendicular to the first direction and injects the process gas supplied from the gas supply section into the substrate through a nozzle formed therein. The distance between the central part of the electrode and the substrate may differ from the distance between the two sides in the longitudinal direction of the electrode and the substrate.

[0007] In one embodiment, the distance between the electrode and the substrate may increase as it moves further away from the central part of the electrode.

[0008] In one embodiment, the lower surface of the electrode may be a curved surface in which the central portion is convex downward.

[0009] In one embodiment, the thickness of the electrode may decrease as it moves away from the central portion of the electrode.

[0010] In one embodiment, the distance between the electrode and the substrate may decrease as it moves further away from the center of the electrode.

[0011] In one embodiment, the lower surface of the electrode may be a curved surface in which the central portion is concave upward.

[0012] In one embodiment, the thickness of the electrode may increase as it moves away from the central portion of the electrode.

[0013] In one embodiment, the width of the central portion of the electrode in the first direction may be the same as the width of the two portions of the electrode in the first direction.

[0014] In one embodiment, the electrodes included in each of the linear nozzle portions may have the same cross-sectional shape.

[0015] In one embodiment, the distance between the central portion of the electrodes included in each of the linear nozzle portions and the substrate may be equal to each other.

[0016] To achieve the objectives of the present invention as described above, a deposition apparatus according to exemplary embodiments of the present invention may include a gas injection unit comprising a plurality of linear nozzle sections arranged parallel along a first direction, and a substrate transfer unit that reciprocates a substrate along the first direction below the gas injection unit. The first linear nozzle section may include a first gas supply section that supplies a first process gas and a first electrode that extends in a second direction perpendicular to the first direction, has a central portion spaced apart from the substrate by a first distance, and injects the first process gas supplied from the first gas supply section into the substrate through a first nozzle formed inside. A second linear nozzle section adjacent to the first linear nozzle section in the first direction may include a second gas supply section that supplies a second process gas different from the first process gas and a second electrode that extends in the second direction, has a central portion spaced apart from the substrate by a second distance greater than the first distance, and injects the second process gas supplied from the second gas supply section into the substrate through a second nozzle formed inside.

[0017] In one embodiment, the distance between the first electrode and the substrate may increase as it moves away from the center of the first electrode. The distance between the second electrode and the substrate may decrease as it moves away from the center of the second electrode.

[0018] In one embodiment, the lower surface of the first electrode may be a curved surface in which the central portion is convex downward. The lower surface of the second electrode may be a curved surface in which the central portion is concave upward.

[0019] In one embodiment, the thickness of the first electrode may decrease as it moves away from the center of the first electrode. The thickness of the second electrode may increase as it moves away from the center of the second electrode.

[0020] In one embodiment, the first linear nozzle part and the third linear nozzle part adjacent in the opposite direction to the first direction may include a third gas supply part that supplies a third process gas different from the first process gas and the second process gas, and a third electrode that extends in the second direction, has a central part spaced apart from the substrate by a third distance greater than the first distance and less than the second distance, and sprays the third process gas supplied from the third gas supply part onto the substrate through a third nozzle formed inside.

[0021] In one embodiment, the distance between the central part of the third electrode and the substrate may be the same as the distance between the two sides in the longitudinal direction of the third electrode and the substrate.

[0022] In one embodiment, the lower surface of the third electrode may be flat.

[0023] In one embodiment, the thickness of the central portion of the third electrode may be the same as the thickness of the portions on both sides in the longitudinal direction of the third electrode.

[0024] In one embodiment, the distance between the first electrode and the substrate may increase as it moves away from the central portion of the first electrode. The distance between the central portion of the second electrode and the substrate may be equal to the distance between the two sides in the longitudinal direction of the second electrode and the substrate.

[0025] In one embodiment, the distance between the central portion of the first electrode and the substrate may be the same as the distance between the two sides in the longitudinal direction of the first electrode and the substrate. The distance between the second electrode and the substrate may decrease as it moves further away from the central portion of the second electrode. Effects of the invention

[0026] A deposition apparatus according to embodiments of the present invention may include linear nozzle sections arranged parallel to each other in a first direction. Each of the linear nozzle sections may include an electrode that extends in a second direction perpendicular to the first direction and excites a process gas into a plasma state and sprays it onto a substrate through nozzles formed therein. The distance between the central part of the electrode and the substrate may differ from the distance between the two sides in the longitudinal direction of the electrode and the substrate. Accordingly, even if the substrate is enlarged, a thin film of uniform thickness can be deposited on the substrate.

[0027] However, the effects of the present invention are not limited to the effects described above, and may be extended in various ways without departing from the spirit and scope of the present invention. Brief explanation of the drawing

[0028] FIG. 1 is a perspective view schematically showing a deposition apparatus according to one embodiment of the present invention. Figure 2 is a cross-sectional view taken along the line I-I' of Figure 1. FIG. 3 is a perspective view showing a first electrode included in the deposition apparatus of FIG. 2. Figure 4 is a cross-sectional view taken along the line II-II' of Figure 3. FIG. 5 is a cross-sectional view schematically showing a deposition apparatus according to another embodiment of the present invention. FIG. 6 is a perspective view showing a second electrode included in the deposition apparatus of FIG. 5. Figure 7 is a cross-sectional view taken along the line III-III' of Figure 6. FIG. 8 is a cross-sectional view schematically showing a deposition apparatus according to another embodiment of the present invention. FIG. 9 is a cross-sectional view showing a third electrode included in the deposition apparatus of FIG. 8. FIGS. 10 to 13 are cross-sectional views schematically illustrating a deposition apparatus according to embodiments of the present invention. Specific details for implementing the invention

[0029] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. Identical or similar reference numerals are used for identical components in the attached drawings.

[0030] FIG. 1 is a perspective view schematically showing a deposition apparatus according to one embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line I-I' of FIG. 1, FIG. 3 is a perspective view showing a first electrode included in the deposition apparatus of FIG. 2, and FIG. 4 is a cross-sectional view taken along the line II-II' of FIG. 3.

[0031] Referring to FIGS. 1 to 4, a deposition apparatus (10) according to one embodiment of the present invention may include a gas injection unit (100) and a substrate transfer unit (200). The gas injection unit (100) and the substrate transfer unit (200) may be accommodated within a deposition chamber (not shown).

[0032] The substrate transfer unit (200) supports the substrate (SUB) to be deposited and can transfer the substrate (SUB) within the deposition chamber. For example, the substrate transfer unit (200) can reciprocate the substrate (SUB) along a first direction (DR1) from the bottom of the gas injection unit (100).

[0033] A gas injection unit (100) can form a thin film on a substrate (SUB) by injecting a process gas toward a substrate (SUB) that is reciprocally transported in a first direction (DR1) from below. Depending on the type of process gas, the injection method, whether high voltage is applied, etc., the deposition apparatus (10) can be applied to various deposition processes such as an atomic layer deposition (ALD) process, a plasma enhanced atomic layer deposition (PEALD) process, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD) process. For example, when an ALD process or a PEALD process is applied, the linear nozzles included in the gas injection unit (100) can inject a source gas and a process gas, respectively. When a CVD process or a PECVD process is applied, the linear nozzles can inject a mixed gas, respectively.

[0034] In one embodiment, the gas injection unit (100) may include a plurality of first linear nozzle sections (110) and a plurality of exhaust sections (120).

[0035] The first linear nozzle sections (110) may be arranged in parallel along the first direction (DR1). Each first linear nozzle section (110) may extend in a second direction (DR2) perpendicular to the first direction (DR1). Although FIG. 2 is illustrated with six first linear nozzle sections (110) arranged in parallel along the first direction (DR1), the number of first linear nozzle sections (110) is not limited thereto. For example, two to five, or seven or more first linear nozzle sections (110) may be arranged in the gas injection unit (100).

[0036] Each of the first linear nozzle sections (110) can spray a first process gas (G1) onto the substrate (SUB) to form a thin film on the substrate (SUB). Here, the first process gas (G1) may be a process gas having the characteristic that a thin film with a relatively thin thickness is formed in the central part rather than on both sides in the longitudinal direction (second direction (DR2)) of the first linear nozzle section (110). This will be described in detail later.

[0037] In one embodiment, the first linear nozzle sections (110) can each spray different first process gases (G1) onto the substrate (SUB). In another embodiment, at least some of the first linear nozzle sections (110) can spray the same first process gas (G1) onto the substrate (SUB).

[0038] Specifically, for example, when the deposition apparatus (10) is applied to an ALD process or a PEALD process, the first linear nozzle section (110) from the left sprays a first source gas, and the second linear nozzle section (110) can spray a first reaction gas that reacts with the first source gas to form a first thin film. The third linear nozzle section (110) from the left sprays a second source gas, and the fourth linear nozzle section (110) can spray a second reaction gas that reacts with the second source gas to form a second thin film. The fifth linear nozzle section (110) from the left sprays a third source gas, and the sixth linear nozzle section (110) can spray a third reaction gas that reacts with the third source gas to form a third thin film. In this case, as the substrate (SUB) moves from left to right and passes under the first linear nozzle section (110) that sprays process gas, the first thin film, the second thin film, and the third thin film can be sequentially stacked and formed on the substrate (SUB).

[0039] As another example, the odd-numbered first linear nozzle sections (110) from the left can spray the first source gas, and the even-numbered first linear nozzle sections (110) can spray the first reaction gas. In this case, the first thin film having a relatively thick thickness can be formed on the substrate (SUB).

[0040] For example, when the deposition apparatus (10) is applied to a CVD process or a PECVD process, the odd-numbered first linear nozzle sections (110) from the left may spray a first mixed gas to form a fourth thin film, and the even-numbered first linear nozzle sections (110) may spray a second mixed gas to form a fifth thin film. In this case, the fourth thin film and the fifth thin film may be formed by alternately stacking on the substrate (SUB). However, this is exemplary and the present invention is not limited thereto.

[0041] Each exhaust unit (120) may be positioned around the first linear nozzle unit (110). The exhaust unit (120) may be connected to an exhaust pump, etc., to exhaust by-products separated from the substrate (SUB) or excess process gas to the outside. The exhaust unit (120) may prevent the first process gas (G1) injected from each first linear nozzle unit (110) from moving toward the adjacent first linear nozzle unit (110). For example, each exhaust unit (120) may be positioned to surround each of the first linear nozzle units (110) in a plane.

[0042] In one embodiment, the deposition apparatus (10) may further include a plurality of curtain gas injection units (130). Each curtain gas injection unit (130) is positioned around a first linear nozzle unit (110) and can inject curtain gas toward a substrate (SUB). The curtain gas may be an inert gas that does not react with the first process gas (G1) injected from the first linear nozzle units (110), such as argon (Ar) gas, nitrogen (N2) gas, etc.

[0043] For example, each curtain gas injection unit (130) may be arranged to surround each of the first linear nozzle units (110) on a plane. The curtain gas injected from each curtain gas injection unit (130) may act as a curtain surrounding each of the first linear nozzle units (110) so that the first process gas (G1) injected from the first linear nozzle unit (110) does not scatter around and mix with other process gases. Accordingly, even if the first linear nozzle units (110) each simultaneously inject different process gases into the substrate (SUB), the process gases may not mix.

[0044] In one embodiment, each first linear nozzle part (110) may include a first gas supply part (112) and a first electrode (114).

[0045] The first gas supply unit (112) can supply the first process gas (G1). For example, the first gas supply unit (112) can deliver the first process gas (G1) supplied from the outside to the first electrode (114).

[0046] The first electrode (114) is positioned at the bottom of the first gas supply unit (112) and can inject the first process gas (G1) supplied from the first gas supply unit (112) through it to the substrate (SUB).

[0047] The first electrode (114) may extend in a second direction (DR2). A first nozzle (116) may be formed inside the first electrode (114). The first nozzle (116) may be formed by penetrating the first electrode (114) in a thickness direction (e.g., a third direction (DR3) perpendicular to the first direction (DR1) and the second direction (DR2)). For example, as shown in FIG. 3, first nozzles (116) in the form of through holes extending in the third direction (DR3) may be arranged in two rows along the second direction (DR2). However, this is exemplary, and the shape and arrangement of the first nozzles (116) of the present invention are not limited thereto. For example, a plurality of first nozzles (116) may have one row or three or more rows and be arranged in the second direction (DR2). As another example, a first nozzle (116) may be formed to extend along the second direction (DR2) and penetrate the first electrode (114) in the third direction (DR3).

[0048] The first electrode (114) can selectively make the first process gas (G1) supplied from the first gas supply unit (112) into a plasma state and spray it onto the substrate (SUB). For example, when an RF power source (not shown) is turned on and a high voltage is applied to the first electrode (114), the first process gas (G1) penetrating the first electrode (114) can be excited into a plasma state and sprayed onto the substrate (SUB). Conversely, when the RF power source is turned off and a high voltage is not applied to the first electrode (114), the first process gas (G1) penetrating the first electrode (114) can be sprayed onto the substrate (SUB) without being excited into a plasma state.

[0049] As illustrated in FIG. 4, the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB) may differ from the distance (d2) between the side portions (114b) of the first electrode (114) in the longitudinal direction (second direction (DR2)) and the substrate (SUB). In one embodiment, the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB) may be smaller than the distance (d2) between the side portions (114b) of the first electrode (114) and the substrate (SUB). For example, the distance between the first electrode (114) and the substrate (SUB) may increase as it moves away from the central portion (114a) of the first electrode (114). In this case, the lower surface of the first electrode (114) may be a curved surface with the central portion (114a) being convex downward.

[0050] In one embodiment, the thickness (t1) of the central portion (114a) of the first electrode (114) may differ from the thickness (t2) of the side portions (114b). For example, the thickness (t1) of the central portion (114a) of the first electrode (114) may be greater than the thickness (t2) of the side portions (114b). For example, the thickness of the first electrode (114) may decrease as it moves away from the central portion (114a). In this case, the upper surface of the first electrode (114) may be a substantially flat plane, and the lower surface of the first electrode (114) may be a curved surface with the central portion (114a) convex downward. Additionally, the length of the first nozzles (116) penetrating the first electrode (114) in the thickness direction (third direction (DR3)) may decrease as it moves away from the central portion (114a) of the first electrode (114).

[0051] In one embodiment, as illustrated in FIG. 3, the first electrode (114) may have substantially the same width in the first direction (DR1). That is, the width of the central portion (114a) of the first electrode (114) in the first direction (DR1) may be substantially the same as the width of the two portions (114b) in the first direction (DR1).

[0052] In exemplary embodiments, various process gases may be used depending on the type of thin film to be formed on the substrate (SUB) or the deposition method. Meanwhile, in the case of a PEALD process or PECVD process using plasma, the thickness of the thin film deposited at the central portion (114a) and the side portions (114b) in the longitudinal direction (second direction (DR2)) of the first electrode (114) may differ depending on the plasma characteristics of the material constituting the process gas. Additionally, as the substrate (SUB) becomes larger (e.g., as the width of the substrate (SUB) in the second direction (DR2) increases), the difference in thickness may increase further.

[0053] The first process gas (G1) may include a material having the characteristic that a thin film is formed with a relatively thin thickness in the central portion (114a) compared to the sides (114b) of the second direction (DR2) of the first electrode (114). As a specific example, if the first process gas (G1) includes an oxygen-based reaction gas, and the distance between the first electrode (114) and the substrate (SUB) is constant, the thickness of the thin film formed in the central portion of the substrate (SUB) may be smaller than the thickness of the thin film formed on both sides of the second direction (DR2). However, according to the deposition apparatus (10) according to the embodiments of the present invention, the distance between the lower surface of the first electrode (114) and the substrate (SUB) may decrease as one moves from the sides (114b) of the first electrode (114) to the central portion (114a). Accordingly, a thin film of uniform thickness may be formed in the central portion of the substrate (SUB) and on both sides of the second direction (DR2). In addition, by adjusting the difference between the distance (d1) between the central part (114a) of the first electrode (114) and the substrate (SUB) and the distance (d2) between the side parts (114b) and the substrate (SUB), a thin film of more uniform thickness can be formed.

[0054] In one embodiment, the first electrodes (114) included in each of the plurality of first linear nozzle portions (110) may have the same cross-sectional shape. For example, each of the first electrodes (114) may have a cross-sectional shape with a bottom surface that is convex downward, as shown in FIG. 4. In this case, the distance between the central portion (114a) of the first electrodes (114) arranged parallel along the first direction (DR1) and the substrate (SUB) may be the same, and the distance between the side portions (114b) of the first electrodes (114) and the substrate (SUB) may be the same.

[0055] FIG. 5 is a cross-sectional view schematically showing a deposition apparatus according to another embodiment of the present invention, FIG. 6 is a perspective view showing a second electrode included in the deposition apparatus of FIG. 5, and FIG. 7 is a cross-sectional view cut along the line III-III' of FIG. 6. For example, the cross-sectional view of FIG. 5 may correspond to the cross-sectional view of FIG. 2.

[0056] Referring to FIGS. 5 to 7, a deposition apparatus (11) according to another embodiment of the present invention may include a gas injection unit (101) and a substrate transfer unit (200). The gas injection unit (101) may include a plurality of second linear nozzle sections (150) and a plurality of exhaust sections (120). The deposition apparatus (11) according to another embodiment described with reference to FIGS. 5 to 7 may be substantially identical or similar to the deposition apparatus (10) according to one embodiment described with reference to FIGS. 1 to 4, except for the configuration of the second linear nozzle section (150). Therefore, redundant descriptions are omitted or simplified.

[0057] The second linear nozzle sections (150) may be arranged parallel along the first direction (DR1). Each second linear nozzle section (150) may extend in the second direction (DR2).

[0058] Each of the second linear nozzle sections (150) can spray a second process gas (G2) onto the substrate (SUB) to form a thin film on the substrate (SUB). The second process gas (G2) may be a process gas having the characteristic that a thin film with a relatively thicker thickness is formed in the central part than on both sides in the longitudinal direction (second direction (DR2)) of the second linear nozzle section (150). For example, the second process gas (G2) may contain a material different from the first process gas (G1).

[0059] In one embodiment, the second linear nozzle sections (150) can each spray different second process gases (G2) onto the substrate (SUB). In another embodiment, at least some of the second linear nozzle sections (150) can spray the same second process gas (G2) onto the substrate (SUB).

[0060] In one embodiment, each second linear nozzle part (150) may include a second gas supply part (152) and a second electrode (154).

[0061] The second gas supply unit (152) can supply the second process gas (G2). For example, the second gas supply unit (152) can deliver the second process gas (G2) supplied from the outside to the second electrode (154).

[0062] The second electrode (154) is positioned below the second gas supply unit (152) and can inject the second process gas (G2) supplied from the second gas supply unit (152) through it to the substrate (SUB).

[0063] The second electrode (154) may be extended in a second direction (DR2). A second nozzle (116) may be formed inside the second electrode (154). The second nozzle (116) may be formed by penetrating the second electrode (154) in the thickness direction (third direction (DR3)).

[0064] The second electrode (154) can selectively make the second process gas (G2) supplied from the second gas supply unit (152) into a plasma state and spray it onto the substrate (SUB). For example, when the RF power supply is turned on and a high voltage is applied to the second electrode (154), the second process gas (G2) penetrating the second electrode (154) can be excited into a plasma state and sprayed onto the substrate (SUB). Conversely, when the RF power supply is turned off and a high voltage is not applied to the second electrode (154), the second process gas (G2) penetrating the second electrode (154) can be sprayed onto the substrate (SUB) without being excited into a plasma state.

[0065] As illustrated in FIG. 7, the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB) may differ from the distance (d4) between the side portions (154b) of the second electrode (154) in the longitudinal direction (second direction (DR2)) and the substrate (SUB). In one embodiment, the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB) may be greater than the distance (d4) between the side portions (154b) of the second electrode (154) and the substrate (SUB). For example, the distance between the second electrode (154) and the substrate (SUB) may decrease as it moves away from the central portion (154a) of the second electrode (154). In this case, the lower surface of the second electrode (154) may be a curved surface with the central portion (154a) concave upward.

[0066] In one embodiment, the thickness (t3) of the central portion (154a) of the second electrode (154) may differ from the thickness (t4) of the side portions (154b). For example, the thickness (t3) of the central portion (154a) of the second electrode (154) may be smaller than the thickness (t4) of the side portions (154b). For example, the thickness of the second electrode (154) may increase as it moves away from the central portion (154a). In this case, the upper surface of the second electrode (154) may be a substantially flat plane, and the lower surface of the second electrode (154) may be a curved surface with the central portion (154a) concave upward. Additionally, the length of the second nozzles (116) penetrating the second electrode (154) in the thickness direction (third direction (DR3)) may increase as it moves away from the central portion (154a) of the second electrode (154).

[0067] In one embodiment, as shown in FIG. 6, the second electrode (154) may have substantially the same width in the first direction (DR1). That is, the width of the central portion (154a) of the second electrode (154) in the first direction (DR1) may be substantially the same as the width of the side portions (154b) in the first direction (DR1).

[0068] The second process gas (G2) may include a material having the characteristic that a thin film of relatively thicker thickness is formed in the central portion (154a) than in the side portions (154b) of the second direction (DR2) of the second electrode (154). As a specific example, if the second process gas (G2) includes a nitrogen-based reaction gas, and the distance between the second electrode (154) and the substrate (SUB) is constant, the thickness of the thin film formed in the central portion of the substrate (SUB) may be greater than the thickness of the thin film formed in the side portions of the second direction (DR2). However, according to the deposition apparatus (11) according to the embodiments of the present invention, the distance between the lower surface of the second electrode (154) and the substrate (SUB) may increase as one moves from the side portions (154b) of the second electrode (154) to the central portion (154a). Accordingly, a thin film of uniform thickness may be formed in the central portion of the substrate (SUB) and in the side portions of the second direction (DR2). In addition, by adjusting the difference between the distance (d3) between the central part (154a) of the second electrode (154) and the substrate (SUB) and the distance (d4) between the side parts (154b) and the substrate (SUB), a thin film of more uniform thickness can be formed.

[0069] In one embodiment, the second electrodes (154) included in each of the plurality of second linear nozzle portions (150) may have the same cross-sectional shape. For example, each of the second electrodes (154) may have a cross-sectional shape in which the lower surface is concave upward, as shown in FIG. 7. In this case, the distance between the central portion (154a) of the second electrodes (154) arranged parallel along the first direction (DR1) and the substrate (SUB) may be the same, and the distance between the side portions (154b) of the second electrodes (154) and the substrate (SUB) may be the same.

[0070] FIG. 8 is a cross-sectional view schematically showing a deposition apparatus according to another embodiment of the present invention, and FIG. 9 is a cross-sectional view showing a third electrode included in the deposition apparatus of FIG. 8. For example, FIG. 8 may correspond to the cross-sectional view of FIG. 2.

[0071] Referring to FIGS. 8 and 9, a deposition apparatus (12) according to another embodiment of the present invention may include a gas injection unit (102) and a substrate transfer unit (200). The gas injection unit (102) may include a first linear nozzle section (110), a third linear nozzle section (160), and exhaust sections (120). The deposition apparatus (12) according to another embodiment described with reference to FIGS. 8 and 9 may be substantially identical or similar to the deposition apparatus (10) according to one embodiment described with reference to FIGS. 1 to 4, except for the configuration of the third linear nozzle section (160). Therefore, redundant descriptions are omitted or simplified.

[0072] In one embodiment, the gas injection unit (102) may include at least one first linear nozzle section (110) and at least one third linear nozzle section (160). The first linear nozzle section (110) and the third linear nozzle section (160) may be arranged side by side along a first direction (DR1). Each of the first linear nozzle section (110) and the third linear nozzle section (160) may extend in a second direction (DR2).

[0073] For example, as illustrated in FIG. 8, the first linear nozzle section (110) and the third linear nozzle section (160) may be arranged alternately along the first direction (DR1). Each third linear nozzle section (160) may be arranged adjacent to each first linear nozzle section (110) in the first direction (DR1) or in the opposite direction of the first direction (DR1).

[0074] As another example, on one side (e.g., left) of the gas injection unit (102), first linear nozzle sections (110) may be arranged in parallel along the first direction (DR1), and on the other side (e.g., right) third linear nozzle sections (160) may be arranged in parallel along the first direction (DR1).

[0075] The first linear nozzle section (110) can spray a first process gas (G1) onto the substrate (SUB) to form a thin film on the substrate (SUB). The first process gas (G1) may be a process gas having the characteristic that a thin film with a relatively thin thickness is formed in the central part rather than on both sides in the longitudinal direction (second direction (DR2)) of the first linear nozzle section (110).

[0076] The third linear nozzle section (160) can inject a third process gas (G3) onto the substrate (SUB) to form a thin film on the substrate (SUB). The third process gas (G3) may be a process gas having the characteristic that a thin film of substantially the same thickness is formed at both sides and the center in the longitudinal direction (second direction (DR2)) of the third linear nozzle section (160). For example, the third process gas (G3) may contain a material different from the first process gas (G1) and the second process gas (G2).

[0077] In one embodiment, each third linear nozzle part (160) may include a third gas supply part (162) and a third electrode (164).

[0078] The third gas supply unit (162) can supply the third process gas (G3). For example, the third gas supply unit (162) can deliver the third process gas (G3) supplied from the outside to the third electrode (164).

[0079] The third electrode (164) is positioned below the third gas supply unit (162) and can inject the third process gas (G3) supplied from the third gas supply unit (162) through it to the substrate (SUB).

[0080] The third electrode (164) may be extended in the second direction (DR2). A third nozzle (166) may be formed inside the third electrode (164). The third nozzle (166) may be formed by penetrating the third electrode (164) in the thickness direction (third direction (DR3)).

[0081] The third electrode (164) can selectively make the third process gas (G3) supplied from the third gas supply unit (162) into a plasma state and spray it onto the substrate (SUB). For example, when the RF power supply is turned on and a high voltage is applied to the third electrode (164), the third process gas (G3) penetrating the third electrode (164) can be excited into a plasma state and sprayed onto the substrate (SUB). Conversely, when the RF power supply is turned off and a high voltage is not applied to the third electrode (164), the third process gas (G3) penetrating the third electrode (164) can be sprayed onto the substrate (SUB) without being excited into a plasma state.

[0082] As illustrated in FIG. 9, the distance (d5) between the third electrode (164) and the substrate (SUB) may be constant. That is, the distance between the central portion (164a) of the third electrode (164) and the substrate (SUB) may be substantially the same as the distance between the two sides (164b) of the third electrode (164) in the longitudinal direction (second direction (DR2)) and the substrate (SUB).

[0083] In one embodiment, with reference to FIGS. 4, 8 and 9, the distance (d5) between the third electrode (164) and the substrate (SUB) may be substantially the same as the distance (d2) between the side portions (114b) of the first electrode (114) and the substrate (SUB). That is, the distance (d5) between the third electrode (164) and the substrate (SUB) may be greater than the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB). In this case, as shown in FIG. 8, the distance between the central portion (164a) of the third electrode (164) and the substrate (SUB) may be greater than the distance between the central portion (114a) of the first electrode (114) and the substrate (SUB).

[0084] In another embodiment, the distance (d5) between the third electrode (164) and the substrate (SUB) may be substantially the same as the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB). In yet another embodiment, the distance (d5) between the third electrode (164) and the substrate (SUB) may be substantially the same as the midpoint between the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB) and the distance (d2) between the side portion (114b) and the substrate (SUB).

[0085] In one embodiment, the third electrode (164) may have substantially the same thickness (t5) in the third direction (DR3). That is, the thickness of the central portion (164a) of the third electrode (164) may be substantially the same as the thickness of the two portions (164b). For example, the upper and lower surfaces of the third electrode (164) may be substantially flat planes. Additionally, the lengths of the third nozzles (166) penetrating the third electrode (164) in the thickness direction (third direction (DR3)) may be equal to each other.

[0086] In one embodiment, the third electrode (164) may have substantially the same width in the first direction (DR1). That is, the width of the central portion (164a) of the third electrode (164) in the first direction (DR1) may be substantially the same as the width of the two portions (164b) in the first direction (DR1).

[0087] According to the present embodiment, when the process gas used in the deposition process includes a first process gas (G1) and a third process gas (G3), the deposition process can be carried out by combining a first linear nozzle part (110) and a third linear nozzle part (160) having different cross-sectional shapes. Accordingly, a thin film of uniform thickness can be formed on the central part of the substrate (SUB) and on both sides of the second direction (DR2).

[0088] FIGS. 10 to 13 are cross-sectional views schematically illustrating a deposition apparatus according to embodiments of the present invention.

[0089] Referring to FIGS. 10 to 13, depending on the characteristics of the process gases used in the deposition process, the first linear nozzle section (110), the second linear nozzle section (150), and the third linear nozzle section (160), having different cross-sectional shapes, can be combined and arranged in various ways. In the following, descriptions that overlap with the above description will be omitted or simplified.

[0090] In one embodiment, referring to FIG. 10, the deposition apparatus (13) may include a gas injection unit (103) and a substrate transfer unit (200). The gas injection unit (103) may include at least one second linear nozzle section (150) and at least one third linear nozzle section (160).

[0091] For example, as illustrated in FIG. 10, the second linear nozzle section (150) and the third linear nozzle section (160) may be arranged alternately along the first direction (DR1). That is, the third linear nozzle section (160) may be arranged adjacent to the second linear nozzle section (150) in the first direction (DR1) or in the opposite direction of the first direction (DR1).

[0092] As another example, on one side (e.g., left) of the gas injection unit (103), second linear nozzle sections (150) may be arranged in parallel along the first direction (DR1), and on the other side (e.g., right) third linear nozzle sections (160) may be arranged in parallel along the first direction (DR1).

[0093] The second linear nozzle section (150) can spray the second process gas (G2) onto the substrate (SUB). The third linear nozzle section (160) can spray the third process gas (G3) onto the substrate (SUB).

[0094] In one embodiment, with reference to FIGS. 7, 9 and 10, the distance (d5) between the third electrode (164) and the substrate (SUB) may be substantially the same as the distance (d4) between the side portions (154b) of the second electrode (154) and the substrate (SUB). That is, the distance (d5) between the third electrode (164) and the substrate (SUB) may be smaller than the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB). In this case, as shown in FIG. 10, the distance between the central portion (164a) of the third electrode (164) and the substrate (SUB) may be smaller than the distance between the central portion (154a) of the second electrode (154) and the substrate (SUB).

[0095] In another embodiment, the distance (d5) between the third electrode (164) and the substrate (SUB) may be substantially the same as the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB). In yet another embodiment, the distance (d5) between the third electrode (164) and the substrate (SUB) may be substantially the same as the midpoint between the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB) and the distance (d4) between the side portion (154b) and the substrate (SUB).

[0096] According to the present embodiment, when the process gas used in the deposition process includes a second process gas (G2) and a third process gas (G3), the deposition process can be carried out by combining a second linear nozzle part (150) and a third linear nozzle part (160) having different cross-sectional shapes. Accordingly, a thin film of uniform thickness can be formed on the central part of the substrate (SUB) and on both sides of the second direction (DR2).

[0097] In one embodiment, referring to FIG. 11, the deposition apparatus (14) may include a gas injection unit (104) and a substrate transfer unit (200). The gas injection unit (104) may include at least one first linear nozzle section (110) and at least one second linear nozzle section (150).

[0098] For example, as illustrated in FIG. 11, the first linear nozzle section (110) and the second linear nozzle section (150) may be arranged alternately along the first direction (DR1). That is, the second linear nozzle section (150) may be arranged adjacent to the first linear nozzle section (110) in the first direction (DR1) or in the opposite direction of the first direction (DR1).

[0099] As another example, on one side (e.g., left) of the gas injection unit (104), first linear nozzle sections (110) may be arranged in parallel along the first direction (DR1), and on the other side (e.g., right) second linear nozzle sections (150) may be arranged in parallel along the first direction (DR1).

[0100] The first linear nozzle section (110) can spray the first process gas (G1) onto the substrate (SUB). The second linear nozzle section (150) can spray the second process gas (G2) onto the substrate (SUB).

[0101] In one embodiment, with reference to FIGS. 4, 7 and 11, the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB) may be greater than the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB). The distance (d4) between the side portions (154b) of the second electrode (154) and the substrate (SUB) may be substantially the same as the distance (d2) between the side portions (114b) of the first electrode (114) and the substrate (SUB).

[0102] In another embodiment, the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB) may be substantially the same as the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB). In yet another embodiment, the median value between the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB) and the distance (d4) between the side portion (154b) and the substrate (SUB) may be substantially the same as the median value between the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB) and the distance (d2) between the side portion (114b) and the substrate (SUB).

[0103] According to the present embodiment, when the process gas used in the deposition process includes a first process gas (G1) and a second process gas (G2), the deposition process can be carried out by combining a first linear nozzle part (110) and a second linear nozzle part (150) having different cross-sectional shapes. Accordingly, a thin film of uniform thickness can be formed on the central part of the substrate (SUB) and on both sides of the second direction (DR2).

[0104] In one embodiment, with reference to FIGS. 12 and FIGS. 13, the deposition apparatus (15) may include a gas injection unit (105) and a substrate transfer unit (200). The gas injection unit (105) may include at least one first linear nozzle section (110), at least one second linear nozzle section (150), and at least one third linear nozzle section (160).

[0105] For example, as illustrated in FIG. 12, the first linear nozzle section (110), the second linear nozzle section (150), and the third linear nozzle section (160) may be arranged alternately along the first direction (DR1). That is, the second linear nozzle section (150) may be arranged adjacent to the first linear nozzle section (110) in the first direction (DR1), and the third linear nozzle section (160) may be arranged adjacent to the first linear nozzle section (110) in a direction opposite to the first direction (DR1).

[0106] As another example, as illustrated in FIG. 13, first linear nozzle sections (110) may be arranged in parallel along the first direction (DR1) on one side (e.g., left) of the gas injection unit (105), second linear nozzle sections (150) may be arranged in parallel along the first direction (DR1) on the other side (e.g., right), and second linear nozzle sections (150) may be arranged in parallel along the first direction (DR1) in the center between the one side and the other side.

[0107] The first linear nozzle section (110) can spray the first process gas (G1) onto the substrate (SUB). The second linear nozzle section (150) can spray the second process gas (G2) onto the substrate (SUB). The third linear nozzle section (160) can spray the third process gas (G3) onto the substrate (SUB).

[0108] In one embodiment, with reference to FIGS. 4, 7, 9 and 12, the distance (d5) between the central portion (164a) of the third electrode (164) and the substrate (SUB) may be greater than the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB), and smaller than the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB). Additionally, the distance (d5) between the side portions (164b) of the third electrode (164) and the substrate (SUB) may be substantially the same as the distance (d2) between the side portions (114b) of the first electrode (114) and the substrate (SUB) and the distance (d4) between the side portions (154b) of the second electrode (154) and the substrate (SUB).

[0109] In another embodiment, the distance (d5) between the third electrode (164) and the substrate (SUB) may be substantially equal to the midpoint between the distance (d1) between the central portion (114a) of the first electrode (114) and the substrate (SUB) and the distance (d2) between the side portion (114b) and the substrate (SUB). Additionally, the distance (d5) between the third electrode (164) and the substrate (SUB) may be substantially equal to the midpoint between the distance (d3) between the central portion (154a) of the second electrode (154) and the substrate (SUB) and the distance (d4) between the side portion (154b) and the substrate (SUB).

[0110] According to the present embodiment, when the process gas used in the deposition process includes a first process gas (G1), a second process gas (G2), and a third process gas (G3), the deposition process can be carried out by combining a first linear nozzle part (110), a second linear nozzle part (150), and a third linear nozzle part (160) having different cross-sectional shapes. Accordingly, a thin film of uniform thickness can be formed on the central part of the substrate (SUB) and on both sides of the second direction (DR2). Industrial applicability

[0111] The present invention can be applied to various deposition devices. For example, the present invention can be applied to a deposition device for manufacturing a display device included in computers, laptops, mobile phones, smartphones, smartpads, PMPs, PDAs, MP3 players, etc.

[0112] Although the present invention has been described above with reference to exemplary embodiments, those skilled in the art will understand that various modifications and changes can be made to the invention without departing from the spirit and scope of the invention as set forth in the following claims. Explanation of the symbols

[0113] 10, 11, 12, 13, 14, 15: Deposition apparatus 100, 101, 102, 103, 104, 105: Gas injection unit 110, 150, 160: First to third linear nozzle sections 112, 152, 162: First to third gas supply units 114, 154, 164: First to third electrodes 116, 156, 166: First to third nozzles G1, G2, G3: First to third process gases 120: Exhaust section 130: Curtain gas injection section SUB: Substrate 200: Substrate transfer unit

Claims

Claim 1 A deposition apparatus comprising: a gas injection unit including a plurality of linear nozzle sections arranged parallel along a first direction; and a substrate transfer unit that reciprocates a substrate along the first direction at the bottom of the gas injection unit, wherein each of the linear nozzle sections includes: a gas supply section that supplies process gas; and an electrode that extends in a second direction perpendicular to the first direction and injects the process gas supplied from the gas supply section into the substrate through a nozzle formed therein, wherein the distance between the central part of the electrode and the substrate is different from the distance between the two sides in the longitudinal direction of the electrode and the substrate, the lower surface of the electrode is a curved surface in which the central part is concave upward, and the distance between the electrode and the substrate gradually decreases from the central part of the electrode to the two sides of the electrode. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 A deposition apparatus according to claim 1, characterized in that the thickness of the electrode increases as it moves away from the central part of the electrode. Claim 8 A deposition apparatus according to claim 1, characterized in that the width of the central portion of the electrode in the first direction is the same as the width of the two portions of the electrode in the first direction. Claim 9 A deposition apparatus according to claim 1, characterized in that the electrodes included in each of the linear nozzle sections have the same cross-sectional shape. Claim 10 A deposition apparatus according to claim 1, characterized in that the distance between the central portion of the electrodes included in each of the linear nozzle portions and the substrate is the same. Claim 11 A deposition apparatus comprising: a gas injection unit including a plurality of linear nozzle sections arranged parallel along a first direction; and a substrate transfer unit that reciprocates a substrate along the first direction at the bottom of the gas injection unit, wherein the first linear nozzle section includes a first gas supply section that supplies a first process gas; and a first electrode that extends in a second direction perpendicular to the first direction, has a central portion spaced apart from the substrate by a first distance, and injects the first process gas supplied from the first gas supply section into the substrate through a first nozzle formed inside, and a second linear nozzle section adjacent to the first linear nozzle section in the first direction includes a second gas supply section that supplies a second process gas different from the first process gas; and a second electrode that extends in the second direction, has a central portion spaced apart from the substrate by a second distance greater than the first distance, and injects the second process gas supplied from the second gas supply section into the substrate through a second nozzle formed inside, wherein the first electrode and the second electrode have different cross-sectional shapes. Claim 12 A deposition apparatus according to claim 11, characterized in that the distance between the first electrode and the substrate increases as it moves away from the central part of the first electrode, and the distance between the second electrode and the substrate decreases as it moves away from the central part of the second electrode. Claim 13 A deposition apparatus according to claim 12, characterized in that the lower surface of the first electrode has a curved surface with the central portion being convex downward, and the lower surface of the second electrode has a curved surface with the central portion being concave upward. Claim 14 A deposition apparatus according to claim 12, characterized in that the thickness of the first electrode decreases as it moves away from the center of the first electrode, and the thickness of the second electrode increases as it moves away from the center of the second electrode. Claim 15 A deposition apparatus according to claim 12, wherein the first linear nozzle part and the third linear nozzle part adjacent in the opposite direction to the first direction include: a third gas supply part that supplies a third process gas different from the first process gas and the second process gas; and a third electrode that extends in the second direction, has a central part spaced apart from the substrate by a third distance greater than the first distance and less than the second distance, and sprays the third process gas supplied from the third gas supply part onto the substrate through a third nozzle formed inside, wherein the third linear nozzle part, the first linear nozzle part, and the second linear nozzle part are sequentially arranged along the first direction. Claim 16 A deposition apparatus according to claim 15, characterized in that the distance between the central part of the third electrode and the substrate is the same as the distance between the two sides in the longitudinal direction of the third electrode and the substrate. Claim 17 A deposition apparatus according to claim 15, characterized in that the lower surface of the third electrode is flat. Claim 18 A deposition apparatus according to claim 15, characterized in that the thickness of the central portion of the third electrode is the same as the thickness of the portions on both sides in the longitudinal direction of the third electrode. Claim 19 A deposition apparatus according to claim 11, characterized in that the distance between the first electrode and the substrate increases as it moves away from the central portion of the first electrode, and the distance between the central portion of the second electrode and the substrate is equal to the distance between the two sides in the longitudinal direction of the second electrode and the substrate. Claim 20 A deposition apparatus according to claim 11, characterized in that the distance between the central part of the first electrode and the substrate is the same as the distance between the two sides in the longitudinal direction of the first electrode and the substrate, and the distance between the second electrode and the substrate decreases as it moves away from the central part of the second electrode.

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