A study on one-component semiconductor CMP polishing characteristics of ceria particles coated with zwitterionic dispersant

Abstract

The present invention relates to a one-component polishing slurry composition, and more specifically, to a one-component polishing slurry composition that has superior thermal stability, dispersion stability, stability over time, polishing efficiency, and selective polishing characteristics compared to conventionally used polishing slurry compositions, and can minimize scratches on the surface to be polished. In addition, the present invention can provide a one-component polishing slurry composition that exhibits excellent selective polishing characteristics without the use of additional additives, with a high polishing rate for silicon oxide films and a low polishing rate for polysilicon wafers and silicon nitride films.

Description

Technology Field

[0001] The present invention relates to a one-component polishing slurry composition, and more specifically, to a one-component polishing slurry composition that has superior thermal stability, dispersion stability, stability over time, polishing efficiency, and selective polishing characteristics compared to conventionally used polishing slurry compositions, and can minimize scratches on the surface to be polished. Background Technology

[0003] As semiconductor devices become more highly integrated and perform better, wiring pattern linewidths are becoming finer and structures are becoming increasingly multilayered; therefore, interlayer flatness in each process is crucial for improving photolithography precision.

[0004] The chemical-mechanical polishing (CMP) process is currently the most prominent planarization technology, and it is classified into oxide CMP, metal CMP, and poly-silicon (poly-Si) CMP processes depending on the material to be polished.

[0005] Initially, CMP slurry compositions containing silica particles were mainly used to polish oxide films, but as design rules became smaller and devices became thinner requiring high planarization, CMP slurry compositions containing cerium oxide particles, which have a high polishing selectivity for wafers containing heterogeneous films, are being applied.

[0006] Meanwhile, a CMP slurry composition containing cerium oxide particles must have a high polishing rate for silicon oxide films and a low polishing rate for silicon nitride films, so that when stepwise silicon oxide films and silicon nitride films are polished together, the silicon oxide film is polished and the polishing of the silicon nitride film is terminated.

[0007] Previously, two-component slurry compositions with separately supplied additives were used to achieve selective polishing characteristics. However, in the case of two-component compositions, problems such as the need to use separate equipment and a complex process may occur.

[0008] Therefore, there is an increasing demand for a one-component polishing slurry composition that has excellent thermal stability, dispersion stability, stability over time, polishing efficiency, and selective polishing characteristics, and can minimize scratches on the surface to be polished. Prior art literature

[0010] Korean Patent Publication No. 10-2013-0078791 The problem to be solved

[0011] The present invention aims to solve the above-mentioned problems by providing a one-component polishing slurry composition that has excellent thermal stability, dispersion stability, stability over time, polishing efficiency, and selective polishing characteristics, and can minimize scratches on the surface to be polished.

[0012] In addition, the present invention aims to provide a one-component polishing slurry composition that exhibits excellent selective polishing characteristics without the use of additional additives, with a high polishing rate for silicon oxide films and a low polishing rate for polysilicon wafers and silicon nitride films. means of solving the problem

[0014] The present invention comprises (a) one or more abrasives selected from aluminum oxide, silicon oxide, zirconium oxide and cerium oxide;

[0015] (b) one or more amphoteric ionic dispersants selected from alkylammonium salt polymers, alkylolammonium salt copolymers, aminocarboxylic acid compounds and amidoamino acid compounds; and

[0016] (c) A liquid carrier; provides a one-component polishing slurry composition comprising.

[0017] In one embodiment of the present invention, the composition is characterized by comprising 5 to 45 weight percent of an abrasive, 1 to 15 weight percent of an amphoteric ion dispersant, and the remainder being a liquid carrier.

[0018] In one embodiment of the present invention, the abrasive is characterized as being cerium oxide.

[0019] In one embodiment of the present invention, the amphoteric ion dispersant is characterized by using a mixture of an alkylolammonium salt copolymer and an aminocarboxylic acid compound.

[0020] In one embodiment of the present invention, the composition is characterized by additionally including 2 to 10 weight percent of a silane coupling agent oligomer.

[0021] In addition, the present invention provides a one-component polishing slurry comprising the above-mentioned one-component polishing slurry composition. Effects of the invention

[0023] The present invention can provide a one-component polishing slurry composition that has excellent thermal stability, dispersion stability, stability over time, polishing efficiency, and selective polishing characteristics, and can minimize scratches on the surface to be polished.

[0024] In addition, the present invention can provide a one-component polishing slurry composition that exhibits excellent selective polishing characteristics without the use of additional additives, with a high polishing rate for silicon oxide films and a low polishing rate for polysilicon wafers and silicon nitride films.

[0025] In addition, the one-component polishing slurry composition of the present invention has excellent thermal stability, dispersion stability, stability over time, polishing efficiency, and selective polishing characteristics, so it can be widely used in fields such as abrasives for semiconductor wafer processes, biomedical, pharmaceutical, cosmetic, and catalyst applications. Brief explanation of the drawing

[0027] Figure 1 shows the dispersibility of the polishing slurry composition of the present invention. Figure 2 shows an OM image of the polishing slurry composition of the present invention. Specific details for implementing the invention

[0028] The present invention will be described in detail below based on the following examples. The terms, examples, etc. used in the present invention are merely illustrative to explain the invention more specifically and to aid the understanding of those skilled in the art, and the scope of the rights, etc., of the present invention should not be interpreted as being limited thereto.

[0029] Unless otherwise defined, technical and scientific terms used in this invention represent the meanings commonly understood by those skilled in the art to which this invention pertains.

[0031] The present invention comprises (a) one or more abrasives selected from aluminum oxide, silicon oxide, zirconium oxide and cerium oxide;

[0032] (b) one or more amphoteric ionic dispersants selected from alkylammonium salt polymers, alkylolammonium salt copolymers, aminocarboxylic acid compounds and amidoamino acid compounds; and

[0033] (c) A liquid carrier; is included in a one-component polishing slurry composition.

[0035] The above abrasive is intended for polishing the wafer surface, and any type commonly used in the wafer CMP process can be used without restriction.

[0036] Examples include metal oxides, and more specifically, may include one or more selected from aluminum oxide, silicon oxide, zirconium oxide, cerium oxide, titanium oxide, magnesium oxide, molybdenum oxide, etc., or may include chemical addition mixtures thereof.

[0037] The above abrasive may be selected particularly from the group consisting of aluminum oxide, silicon oxide, zirconium oxide, cerium oxide, and combinations thereof, and more preferably, cerium oxide (ceria) is used because the particle size is uniform and the particle hardness is low.

[0038] The particle size of the abrasive is preferably 50 to 1,000 nm, and the particle size can be measured using a particle size distribution meter (such as a Horiba device) or laser diffraction.

[0039] If the particle size of the abrasive is less than 50 nm, the polishing speed and polishing efficiency decrease, and if it exceeds 1,000 nm, scratches and defects on the polished surface actually increase.

[0040] The method for manufacturing the above abrasive is not particularly limited as long as it is a method for manufacturing metal oxide particles applied in the industry, and solid-state methods, liquid-state methods, etc., may be used.

[0041] The above abrasive may be used in an amount of 5 to 45 weight percent, preferably 5 to 30 weight percent, of 100 weight percent of the total polishing slurry composition. If the content of the abrasive is less than 5 weight percent, the polishing speed decreases, and if it exceeds 45 weight percent, the dispersibility of the composition is low and a large amount of scratches may occur on the surface to be polished.

[0043] The above-mentioned amphoteric ion dispersant can be bonded to the surface of the abrasive to improve the dispersion stability and polishing performance of the polishing slurry composition.

[0044] The above-mentioned amphoteric ion dispersant may be an alkylammonium salt polymer, an alkylolammonium salt copolymer, an aminocarboxylic acid compound, an amidoamino acid compound, etc.

[0045] The above alkylammonium salt polymer may be an alkylammonium salt of a polymer having an acidic group, and BYK’s DISPER BYK 140, etc., may be used.

[0046] The above alkylolammonium salt copolymer may be an alkylolammonium salt of a copolymer having an acidic group, and as an example, DISPER BYK 180 of BYK can be used.

[0047] The above aminocarboxylic acid compounds are N-lauroyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine sodium, N-oleoyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine sodium, N-cocoyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine sodium, N-lauroyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine potassium, N-oleoyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine potassium, N-lauroyl-N-hydroxyethyl-N'-carboxymethyl ethylenediamine sodium, N-oleoyl-N-hydroxyethyl-N'-carboxymethyl ethylenediamine sodium, N-cocoyl-N-hydroxyethyl-N'-carboxymethyl ethylenediamine sodium, N-lauroyl-N-hydroxyethyl-N', N'-dicarboxymethyl ethylenediamine monosodium, N-oleoyl-N-hydroxyethyl-N', N'-dicarboxymethyl ethylenediamine monosodium, N-cocoyl-N-hydroxyethyl-N', N'-dicarboxymethyl ethylenediamine monosodium, N-lauroyl-N-hydroxyethyl-N', N'-dicarboxymethyl ethylenediamine disodium, N-oleoyl-N-hydroxyethyl-N', N'-dicarboxymethyl ethylenediamine disodium, N-cocoyl-N-hydroxyethyl-N', N'-dicarboxymethyl ethylenediamine disodium, etc. may be used.

[0048] The above-mentioned amphoteric ion dispersant is preferably included in an amount of 1 to 15 weight percent, more preferably 3 to 10 weight percent, of 100 weight percent of the total polishing slurry composition. If the content of the dispersant is less than 1 weight percent, dispersion stability is reduced, and if it exceeds 15 weight percent, a large amount of scratches occur on the surface to be polished and polishing efficiency is reduced.

[0050] In the present invention, an alkylolammonium salt copolymer and an alkylammonium salt polymer can be mixed and used as the amphoteric ion dispersant, and the weight ratio of the alkylolammonium salt copolymer and the alkylammonium salt polymer is preferably 60 to 80:20 to 40. When the weight ratio satisfies the above numerical range, polishing efficiency, dispersibility, and selective polishing characteristics can be maximized.

[0052] In addition, the present invention may use a mixture of an alkylolammonium salt copolymer and an aminocarboxylic acid compound as the amphoteric ion dispersant, and it is preferable that the weight ratio of the alkylolammonium salt copolymer and the aminocarboxylic acid compound be 60 to 80:20 to 40. When the weight ratio satisfies the above numerical range, polishing efficiency, dispersibility, and selective polishing characteristics can be maximized.

[0054] In addition, the present invention may use a mixture of an alkylolammonium salt copolymer, an alkylammonium salt polymer, and an aminocarboxylic acid compound as the amphoteric ion dispersant, and the weight ratio of the alkylolammonium salt copolymer, the alkylammonium salt polymer, and the aminocarboxylic acid compound is preferably 100:10 to 30:5 to 20. When the weight ratio satisfies the above numerical range, polishing efficiency, dispersibility, and selective polishing characteristics can be maximized.

[0056] In addition, the present invention may use a mixture of N-lauroyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine salt and N-lauroyl-N-hydroxyethyl-N'-carboxymethyl ethylenediamine salt as the aminocarboxylic acid compound, and it is preferable that the weight ratio of N-lauroyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine salt and N-lauroyl-N-hydroxyethyl-N'-carboxymethyl ethylenediamine salt is 60~80:20~40. When the weight ratio satisfies the above numerical range, polishing efficiency, dispersibility, and selective polishing characteristics can be maximized.

[0058] In addition, the present invention may use a mixture of N-lauroyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine salt, N-lauroyl-N-hydroxyethyl-N'-carboxymethyl ethylenediamine salt, and N-lauroyl-N-hydroxyethyl-N',N'-dicarboxymethyl ethylenediamine monosodium as the aminocarboxylic acid compound, and it is preferable that the weight ratio of N-lauroyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine salt, N-lauroyl-N-hydroxyethyl-N'-carboxymethyl ethylenediamine salt, and N-lauroyl-N-hydroxyethyl-N',N'-dicarboxymethyl ethylenediamine monosodium is 100:10 to 30:5 to 20. When the weight ratio satisfies the above numerical range, polishing efficiency, dispersibility, and selective polishing characteristics can be maximized.

[0060] The above liquid carrier is intended to disperse the abrasive, and any material that can be mixed with the abrasive and the dispersant to form a dispersion or slurry may be used. Suitable liquid carriers include polar solvents, preferably ultrapure water (deionized water), distilled water, etc.

[0062] In addition, the above one-component polishing slurry composition may further include a dispersion aid.

[0063] One or more of the above dispersion aids may be selected from ethylene-acrylic acid copolymer, salt of ethylene-acrylic acid copolymer, styrene-maleic acid copolymer, and styrene-acrylic acid copolymer.

[0064] At this time, zinc salt of ethylene-acrylic acid copolymer, sodium salt of ethylene-acrylic acid copolymer, magnesium salt of ethylene-acrylic acid copolymer, etc., can be used as the salt of the ethylene-acrylic acid copolymer.

[0065] The above-mentioned dispersion aid is coated on the surface of the abrasive to prevent aggregation and sedimentation of the abrasive, and can improve dispersibility and uniformity by reducing the particle size of the abrasive.

[0066] It is preferable that the above dispersion aid be used in an amount of 1 to 10 weight percent of 100 weight percent of the total polishing slurry composition. If the content of the dispersion aid is less than 1 weight percent, the dispersion stability is reduced, and if it exceeds 10 weight percent, a large amount of scratches occur on the surface to be polished and the polishing efficiency is reduced.

[0068] The present invention may use a mixture of an ethylene-acrylic acid copolymer and a salt of the ethylene-acrylic acid copolymer as a dispersion aid, wherein the weight ratio of the ethylene-acrylic acid copolymer and the salt of the ethylene-acrylic acid copolymer is preferably 60~80:20~40.

[0069] When the weight ratio satisfies the above numerical range, polishing efficiency and dispersibility can be maximized.

[0071] In addition, the above dispersion aid may be used by mixing an ethylene-acrylic acid copolymer, a salt of the ethylene-acrylic acid copolymer, and a styrene-maleic acid copolymer, wherein the weight ratio of the ethylene-acrylic acid copolymer, the salt of the ethylene-acrylic acid copolymer, and the styrene-maleic acid copolymer is preferably 100:30 to 50:10 to 30.

[0072] When the weight ratio satisfies the above numerical range, polishing efficiency and dispersibility can be maximized.

[0074] In addition, the above dispersion aid may be used by mixing an ethylene-acrylic acid copolymer, a salt of an ethylene-acrylic acid copolymer, a styrene-maleic acid copolymer, and a styrene-acrylic acid copolymer, wherein the weight ratio of the ethylene-acrylic acid copolymer, the salt of an ethylene-acrylic acid copolymer, the styrene-maleic acid copolymer, and the styrene-acrylic acid copolymer is preferably 100:30~50:10~30:5~20.

[0075] When the weight ratio satisfies the above numerical range, polishing efficiency and dispersibility can be maximized.

[0077] In addition, the composition of the present invention may further include a pH adjuster to maintain a constant zeta potential.

[0078] The above pH adjuster is intended to adjust the pH of the polishing slurry composition to a range of 8 to 11, and its type is not limited within the range that can achieve the purpose of the present invention.

[0079] Examples include trimethanolamine, triethanolamine, trimethylammonium hydroxide, triethylammonium hydroxide, dimethylbenzylamine, ethoxybenzylamine, sodium hydroxide, and potassium hydroxide, and may be included in an amount of 0.0001 to 5 weight% based on 100 weight% of the total slurry composition.

[0080] When the content satisfies the above numerical range, polishing efficiency and dispersibility can be maximized.

[0082] In addition, the above polishing slurry composition may further include a silane coupling agent oligomer to improve dispersibility.

[0083] The above silane coupling agent oligomer can be prepared by reacting an acrylate group-containing silane coupling agent, an epoxy group-containing silane coupling agent, 2-hydroxyethyl acrylate (HEA), and 2-hydroxyethyl methacrylate (HEMA).

[0084] The above silane coupling agent oligomer is bonded to the surface of the abrasive to prevent aggregation and sedimentation of the abrasive, and can improve dispersibility and uniformity by reducing the particle size of the abrasive.

[0085] The above acrylate group-containing silane coupling agents include 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, methacryloxymethyltriethoxysilane, and methacryloxymethyltrimethoxysilane.

[0086] The above epoxy group-containing silane coupling agents include 2-glycidoxyethylmethyldimethoxysilane, 2-glycidoxyethylmethyldiethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 2-glycidoxyethyltrimethoxysilane, 2-glycidoxyethyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethylmethyldimethoxysilane, 2-(3,4-epoxycyclohexyl)ethylmethyldiethoxysilane, 3-(3,4-epoxycyclohexyl)propylmethyldimethoxysilane, 3-(3,4-epoxycyclohexyl)propylmethyldiethoxysilane, Examples include 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltriethoxysilane, 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltriethoxysilane, etc.

[0087] The weight ratio of the above acrylate group-containing silane coupling agent, epoxy group-containing silane coupling agent, 2-hydroxyethyl acrylate (HEA), and 2-hydroxyethyl methacrylate (HEMA) is preferably 10~40:100:20~50:10~30, and when the weight ratio satisfies the above numerical range, polishing efficiency, dispersibility, and selective polishing characteristics can be maximized.

[0088] It is preferable that the weight-average molecular weight of the above oligomer be 5,000 to 50,000 g / mol.

[0089] It is preferable that the above oligomer be used in an amount of 2 to 10 weight percent of 100 weight percent of the total polishing slurry composition, and when the content satisfies the above numerical range, polishing efficiency, dispersibility, and selective polishing characteristics can be maximized.

[0091] In addition, the polishing slurry composition may further include a silane coupling agent oligomer prepared by reacting an acrylate group-containing silane coupling agent, an epoxy group-containing silane coupling agent, bisphenol A, 2-hydroxyethyl acrylate (HEA), and 2-hydroxyethyl methacrylate (HEMA) to improve dispersibility.

[0092] The weight ratio of the above acrylate group-containing silane coupling agent, epoxy group-containing silane coupling agent, bisphenol A, 2-hydroxyethyl acrylate (HEA), and 2-hydroxyethyl methacrylate (HEMA) is preferably 10~40:100:15~35:20~50:10~30, and when the weight ratio satisfies the above numerical range, polishing efficiency and dispersibility can be maximized.

[0093] It is preferable that the weight-average molecular weight of the above oligomer be 5,000 to 50,000 g / mol.

[0094] It is preferable that the above oligomer be used in an amount of 2 to 10 weight percent of 100 weight percent of the total polishing slurry composition, and when the content satisfies the above numerical range, polishing efficiency, dispersibility, and selective polishing characteristics can be maximized.

[0096] The present invention allows the surface of a substrate to be polished with a slurry composition using a known polishing system. The substrate is not limited to any specific type as long as it is commonly used in the art, and may include, for example, silicon oxide, silicon nitride, polycrystalline silicon, and may include borophosphosilicate glass (BPSG), plasma-enhanced tetraethyl orthosilicate (PETEOS), thermal oxide, nitrogen-doped silicate glass, undoped silicate glass, and high-density plasma (HDP) oxide.

[0097] In the present invention, the polishing system may utilize conventional technology. For example, the film of a wafer can be chemically or mechanically polished by fixing a wafer to a polishing system including a fiber polishing pad, pressing the wafer against the polishing pad while adjusting pressure, speed, and temperature conditions, moving the pad and the wafer relative to each other, and then spraying a slurry composition onto the wafer.

[0099] The present invention will be described in detail below through examples and comparative examples. The following examples are merely illustrative for the implementation of the present invention, and the scope of the present invention is not limited by the following examples.

[0101] (Example 1)

[0102] A one-component polishing slurry composition was prepared by adding 30% by weight of cerium oxide particles with an average particle size of 100 nm, 5% by weight of an alkylolammonium salt of a copolymer having an acidic group (DISPER BYK 180 of BYK), and the remainder of distilled water, and stirring for 2 hours.

[0104] (Comparative Example 1)

[0105] A polishing slurry composition was prepared in the same manner as in Example 1, except that polyacrylic acid was used instead of an alkylolammonium salt of a copolymer having an acidic group as a dispersant.

[0107] Figure 1 shows an SEM image of the polishing slurry composition of the present invention.

[0108] SEM analysis results show that in the case of Example 1 using an amphoteric ion dispersant, round and oval-shaped particles are formed and there are fewer scratches and defects.

[0110] Figure 2 shows an SEM image of the polishing slurry composition of the present invention.

[0111] As a result of SEM analysis, in the case of Comparative Example 1 using a polyacrylic acid dispersant, the particles exhibit a sharp shape and have a form that looks like glass broken along the grain.

[0113] (Example 2)

[0114] A polishing slurry composition was prepared in the same manner as in Example 1, except that instead of 5% by weight of an alkylolammonium salt of a copolymer having an acidic group as a dispersant, 3.5% by weight of an alkylolammonium salt of a copolymer having an acidic group and 1.5% by weight of N-lauroyl-N'-hydroxyethyl-N'-carboxymethyl ethylenediamine polyacrylic acid were used.

[0116] (Example 3)

[0117] A polishing slurry composition was prepared in the same manner as in Example 1, except that 5% by weight of ethylene-acrylic acid copolymer was additionally used.

[0119] (Example 4)

[0120] A silane coupling agent oligomer was prepared by reacting 3-methacryloxypropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 2-hydroxyethyl acrylate (HEA), and 2-hydroxyethyl methacrylate (HEMA).

[0121] At this time, the weight ratio of 3-methacryloxypropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 2-hydroxyethyl acrylate (HEA), and 2-hydroxyethyl methacrylate (HEMA) was 30:100:30:20.

[0122] A polishing slurry composition was prepared in the same manner as in Example 1, except that 5% by weight of the above silane coupling agent oligomer was additionally used.

[0124] (Target for grinding)

[0125] The wafers used were planar silicon oxide films, polysilicon wafers (Poly), and silicon nitride films.

[0127] (CMP process conditions)

[0128] The polishing process conditions are as shown in Table 1 below.

[0130] CMP parameter CMP condition equipment AP-300(CTS) Polishing pad IC-1010(DAW) Slurry inflow rate 250㎖ / min Head speed 87rpm Table speed 93rpm enter 5.0 psi Grinding time 60 seconds

[0132] (Grinding speed)

[0133] The thickness of the wafer specimens before and after polishing was verified using ST-5030 (K-MAC Corp.). To prevent measurement errors, 49 identical points were measured along the X-axis from the center to the edge of each wafer and averaged (unit: Å / min).

[0135] (Uniformity)

[0136] The uniformity of the wafer specimen was measured after polishing.

[0138] (Scratch status)

[0139] After polishing and cleaning the substrate, defects and scratches were observed using an optical microscope and classified as excellent, good, average, or poor.

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Claims

Claim 1 (a) one or more abrasives selected from aluminum oxide, silicon oxide, zirconium oxide and cerium oxide; (b) amphoteric ionic dispersant; (c) silane coupling agent oligomer; A one-component polishing slurry composition comprising: (d) a liquid carrier; wherein the composition comprises 5 to 45 wt% of a polishing agent, 1 to 15 wt% of an amphoteric ion dispersant, 2 to 10 wt% of a silane coupling agent oligomer, and the remainder being a liquid carrier, wherein the amphoteric ion dispersant is an alkylol ammonium salt of a copolymer having an acidic group, and the silane coupling agent oligomer is prepared by reacting an acrylate group-containing silane coupling agent, an epoxy group-containing silane coupling agent, 2-hydroxyethyl acrylate (HEA), and 2-hydroxyethyl methacrylate (HEMA), and the weight ratio of the acrylate group-containing silane coupling agent, the epoxy group-containing silane coupling agent, 2-hydroxyethyl acrylate (HEA), and 2-hydroxyethyl methacrylate (HEMA) is 10 to 40:100:20 to 50:10 to 30. Composition. Claim 2 delete Claim 3 A one-component polishing slurry composition according to claim 1, characterized in that the abrasive is cerium oxide. Claim 4 delete Claim 5 delete Claim 6 A one-component polishing slurry comprising the one-component polishing slurry composition of claim 1.

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