Bonding method and bonding apparatus

Abstract

A technology is provided that reduces the warping of a first substrate, including a glass substrate and a resin layer, before bonding a second substrate, thereby improving the bonding precision of the first substrate and the second substrate. The bonding method comprises the following (A) to (C). (A) A first substrate, including a glass substrate and a resin layer, is adsorbed and held by a first holding member. (B) A second substrate is adsorbed and held by a second holding member. (C) By moving the first holding member and the second holding member relative to each other, the first substrate and the second substrate are brought into contact and pressed by interposing an adhesive. The bonding method comprises the following (D) to (E). (D) The first substrate is heated by a heating member. (E) The first substrate is returned using a return member that returns the first substrate from the heating member to the first holding member. Before adsorbing and holding the first substrate with the first holding part, the warping of the first substrate is reduced by heating the first substrate with the heating part.

Description

Technology Field

[0001] The present disclosure relates to a joining method and a joining device. Background Technology

[0002] Patent document 1 discloses a bonding method in which a substrate to be processed and a supporting substrate are adsorbed and held in a first holding part and a second holding part arranged oppositely, and the substrates are heated by a heating mechanism of each holding part, and the second holding part is pressed against the first holding part to bond the substrate to be processed and the supporting substrate. Prior art literature

[0003] Japanese Patent Publication No. 2013-065677 The problem to be solved

[0004] One aspect of the present disclosure provides a technology that improves the bonding precision of a first substrate and a second substrate by reducing the warping of the first substrate before bonding the first substrate and the second substrate, comprising a glass substrate and a resin layer. means of solving the problem

[0005] A bonding method according to one aspect of the present disclosure has the following (A) to (C): (A) A first substrate comprising a glass substrate and a resin layer is adsorbed and held by a first holding member. (B) A second substrate is adsorbed and held by a second holding member. (C) By moving the first holding member and the second holding member relative to each other, the first substrate and the second substrate are brought into contact and pressed by means of an adhesive. The bonding method has the following (D) to (E): (D) The first substrate is heated by a heating member. (E) The first substrate is conveyed using a conveying member that conveys the first substrate from the heating member to the first holding member. By heating the first substrate with the heating member before adsorbing and holding the first substrate to the first holding member, the warping of the first substrate is reduced. Effects of the invention

[0006] According to one aspect of the present disclosure, the warping of the first substrate can be reduced before bonding the first substrate, which includes a glass substrate and a resin layer, and the second substrate, thereby improving the bonding precision of the first substrate and the second substrate. Brief explanation of the drawing

[0007] FIG. 1 is a plan view showing a joining system according to one embodiment. Figure 2 is a side view of the joining system of Figure 1. FIG. 3 is a side view showing an example of a first substrate and a second substrate. Figure 4 is a plan view showing an example of a joining device. FIG. 5 is a front view showing an example of a transmission section and an inversion section. Figure 6 is a side view showing an example of an inversion section. Figure 7 is a side view showing an example of a return section. FIG. 8 is a plan view showing an example of the first return arm of the return section. FIG. 9 is a plan view showing an example of a second return arm of a return section. FIG. 10 is a cross-sectional view showing an example of a heating section. FIG. 11 is a cross-sectional view showing an example of a joint. FIG. 12 is a cross-sectional view showing an example of the operation of the joint. FIG. 13 is a flowchart illustrating a joining method according to one embodiment. FIG. 14 is a side view showing an example of a second heating section. FIG. 15 is a side view showing an example of a bending measurement section. Specific details for implementing the invention

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, in each drawing, the same or corresponding components are given the same reference numerals, and descriptions may be omitted. Furthermore, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0009] First, a bonding system (1) according to the present embodiment will be described with reference to FIG. 1 and FIG. 2. As shown in FIG. 3, the bonding system (1) forms a polymerized substrate (T) by bonding a substrate to be treated (W) and a support substrate (S) through an adhesive (G). The substrate to be treated (W) is the first substrate, and the support substrate (S) is the second substrate.

[0010] The substrate to be processed (W) includes, for example, a glass substrate (Wa) and a resin layer (Wb) formed on the glass substrate (Wa). A plurality of electronic circuits may be formed in advance on the surface of the glass substrate (Wa) that forms the resin layer (Wb). Among the surfaces of the substrate to be processed (W), the surface facing the support substrate (S) is described as the "bonding surface (Wj)," and the surface opposite to the bonding surface (Wj) is described as the "non-bonding surface (Wn)." The bonding surface (Wj) is the surface of the resin layer (Wb), and the non-bonding surface (Wn) is the surface of the glass substrate (Wa). After bonding the substrate to be processed (W) and the support substrate (S), the glass substrate (Wa) is thinned by a polishing process.

[0011] The substrate to be processed (W) comprises, as described above, a glass substrate (Wa) and a resin layer (Wb) formed on the glass substrate (Wa). The resin layer (Wb) is formed, for example, by applying a resin composition on the glass substrate (Wa) and heating the applied resin composition. Afterward, the resin layer (Wb) is cooled to room temperature.

[0012] After forming the resin layer (Wb), during the process of cooling the resin layer (Wb), the substrate to be processed (W) may warp due to the difference in thermal expansion between the resin layer (Wb) and the glass substrate (Wa). When a glass substrate (Wa) is used as the substrate for the resin layer (Wb), compared to when a silicon substrate or the like is used instead of the glass substrate (Wa), the difference in thermal expansion between the resin layer (Wb) and the substrate is greater, resulting in greater warping.

[0013] In this embodiment, as will be described in detail later, a heating unit (130) for heating the substrate to be processed (W) before bonding the substrate to be processed (W) and the support substrate (S) is provided inside the bonding device (80). Therefore, warping that occurs during the process of cooling the resin layer (Wb) after the formation of the resin layer (Wb) can be reduced immediately before bonding. As a result, the precision of the horizontal alignment of the substrate to be processed (W) and the support substrate (S) performed immediately before bonding can be improved, thereby improving the bonding precision.

[0014] The support substrate (S) is a substrate with approximately the same diameter as the substrate to be processed (W) and supports the substrate to be processed (W). For example, a glass substrate is used as the support substrate (S). Among the surfaces of the support substrate (S), the surface facing the substrate to be processed (W) is described as the ‘bonding surface (Sj)’, and the surface opposite to the bonding surface (Sj) is described as the ‘non-bonding surface (Sn)’.

[0015] The adhesive (G) is, for example, a thermosetting resin-based adhesive. Thermal strengthening refers to a property in which it is difficult to deform at room temperature (for example, about 20°C), but softens upon heating to become easy to mold, polymerizes further upon heating to harden, and does not return to its original state. As for the adhesive (G), for example, one with a softening temperature of about 120 to 140°C and a hardening temperature of about 180°C is used. The adhesive (G) may have multiple structures.

[0016] As shown in FIG. 1, the joining system (1) is equipped with an incoming / outgoing station (2) and a processing station (3). The incoming / outgoing station (2) and the processing station (3) are integrally connected in this order in the Y-axis direction.

[0017] The incoming / outgoing station (2) is equipped with a cassette placement table (10) and a first return area (11). The cassette placement table (10) is a place where cassettes (Cw, Cs, Ct) that accommodate multiple substrates (e.g., 25 substrates) in a horizontal state are placed. In the incoming / outgoing station (2), for example, four placement sections (12) are arranged in a row. In each placement section (12), for example, a cassette (Cw) that accommodates a substrate to be processed (W), a cassette (Cs) that accommodates a support substrate (S), and a cassette (Ct) that accommodates a polymerization substrate (T) are respectively placed.

[0018] In the first conveying area (11), a conveying path (13) extending in the X-axis direction and a first conveying device (14) movable along the conveying path (13) are arranged. The first conveying device (14) is movable in the Y-axis direction and can also pivot around the Z-axis, and conveys a substrate to be processed (W), a support substrate (S), and a polymerization substrate (T) between a cassette (Cw, Cs, Ct) placed in the placement section (12) and a transition device (30) of the processing station (3) described later.

[0019] The processing station (3) is equipped with a second conveying area (20), a transition device (30), a coating device (40), a heat treatment device (50), and a bonding device (80). The transition device (30), the coating device (40), the heat treatment device (50), and the bonding device (80) are arranged and positioned around the second conveying area (20). The arrangement and number of these devices can be arbitrarily set.

[0020] In the second conveying area (20), a second conveying device (21) is disposed. The second conveying device (21) is movable in the X-axis direction, Y-axis direction, and Z-axis direction, and is also pivotable around the Z-axis, and performs conveying of the substrate to be processed (W), the support substrate (S), and the polymerization substrate (T) between the transition device (30), the coating device (40), the heat treatment device (50), and the bonding device (80).

[0021] A transition device (30) is positioned between a first transport area (11) and a second transport area (20). The first transport device (14) and the second transport device (21) transport a substrate to be processed (W), a support substrate (S), and a polymerization substrate (T) via the transition device (30). A coating device (40) applies an adhesive (G) to the bonding surface (Sj) of the support substrate (S). A heat treatment device (50) heats the support substrate (S) coated with the adhesive (G) to a predetermined temperature to vaporize the organic solvent contained in the adhesive (G). A bonding device (80) bonds the substrate to be processed (W) and the support substrate (S) via the adhesive (G).

[0022] The bonding system (1) is equipped with a control device (90). The control device (90) is, for example, a computer and is equipped with a CPU (Central Processing Unit) (91) and a storage medium (92), such as memory. A program that controls various processes executed in the bonding system (1) is stored in the storage medium (92). The control device (90) controls the operation of the bonding system (1) by executing the program stored in the storage medium (92) on the CPU (91).

[0023] Next, with reference to FIGS. 1 and FIGS. 2, the operation of the bonding system (1) will be briefly described. In the bonding system (1), first, a cassette (Cw) containing a plurality of substrates to be processed (W), a cassette (Cs) containing a plurality of supporting substrates (S), and an empty cassette (Ct) are each placed in the placement section (12) of the incoming / outgoing station (2).

[0024] Afterward, the first conveying device (14) takes out the support substrate (S) from the cassette (Cs) and conveys it to the transition device (30) of the processing station (3). At this time, the support substrate (S) is conveyed with the bonding surface (Sj) facing upward. The support substrate (S) conveyed to the transition device (30) is taken out of the transition device (30) by the second conveying device (21) and then conveyed to the coating device (40).

[0025] Next, the coating device (40) applies adhesive (G) to the bonding surface (Sj) of the support substrate (S). Afterward, the support substrate (S) is removed from the coating device (40) by the second conveying device (21) and then conveyed to the heat treatment device (50).

[0026] Next, the heat treatment device (50) heats the support substrate (S) to a predetermined temperature. As a result, the organic solvent contained in the adhesive (G) applied to the support substrate (S) vaporizes. The adhesive (G) in which the organic solvent has vaporized hardens to the point where it does not fall off even when the support substrate (S) is tilted. Afterward, the support substrate (S) is removed from the heat treatment device (50) by the second conveying device (21) and then conveyed to the bonding device (80).

[0027] While the above processing is being performed, the substrate to be processed (W) is removed from the cassette (Cw) by the first conveying device (14) and conveyed to the transition device (30) of the processing station (3). At this time, the substrate to be processed (W) is conveyed with the bonding surface (Wj) facing upward. The substrate to be processed (W) conveyed to the transition device (30) is removed from the transition device (30) by the second conveying device (21) and then conveyed to the bonding device (80).

[0028] When the substrate to be processed (W) and the support substrate (S) are brought into the bonding device (80), the substrate to be processed (W) and the support substrate (S) are bonded by the bonding device (80) to form a polymerized substrate (T). The polymerized substrate (T) is then taken out of the bonding device (80) by the second transport device (21), transferred to the first transport device (14) via the transition device (30), and received into a cassette (Ct) by the first transport device (14). In this way, the series of bonding processes is completed.

[0029] Next, with reference to FIG. 4, an example of a bonding device (80) will be described. As shown in FIG. 4, the bonding device (80) is provided with a processing container (100) capable of sealing the interior. On the side of the processing container (100) on the side of the second conveying area (20), an inlet / outlet port (101) is formed through which a substrate to be processed (W), a support substrate (S), and a polymerization substrate (T) pass. An opening / closing shutter (not shown) is provided in the inlet / outlet port (101).

[0030] Inside the processing container (100), an inner wall (102) may be provided to divide the area inside the processing container (100) into a pre-processing area (D1) and a bonding area (D2). An inlet / outlet port (103) through which a substrate to be processed (W), a support substrate (S), and a polymerization substrate (T) pass is formed in the inner wall (102), and an opening / closing shutter (not shown) is provided in the inlet / outlet port (103).

[0031] In the pretreatment area (D1), a transfer unit (110) is provided to transfer the substrate to be processed (W), the support substrate (S), and the polymerization substrate (T) between the outside of the bonding device (80). The transfer unit (110) is positioned adjacent to the inlet / outlet port (101).

[0032] The transfer unit (110) is equipped with a transfer arm (111) and a support pin (112). The transfer arm (111) transfers the substrate to be processed (W), the support substrate (S), and the polymerization substrate (T) between the second transfer device (21) (see FIG. 1) and the support pin (112). The support pin (112) is provided in multiple locations, for example, three locations, to support the substrate to be processed (W), the support substrate (S), and the polymerization substrate (T).

[0033] As described below, the delivery unit (110) is arranged in multiple vertical sections, for example, two sections, to simultaneously deliver any two of the substrate to be processed (W), the support substrate (S), and the polymerization substrate (T). For example, the substrate to be processed (W) or the support substrate (S) before bonding may be delivered from one delivery unit (110), and the polymerization substrate (T) after bonding may be delivered from another delivery unit (110). Alternatively, the substrate to be processed (W) before bonding may be delivered from one delivery unit (110), and the support substrate (S) before bonding may be delivered from another delivery unit (110).

[0034] Above the transmission unit (110), an inversion unit (120) is provided to invert, for example, the support substrate (S) up and down. The inversion unit (120) is provided with a holding arm (121) that holds the substrate to be processed (W) or the support substrate (S) in between. The holding arm (121) is extended in a horizontal direction (in the Y-axis direction in FIG. 4), is rotatable around the horizontal axis, and is also movable in a horizontal direction (X-axis direction and Y-axis direction) and a vertical direction (Z-axis direction).

[0035] Additionally, the inversion unit (120) is equipped with a control mechanism for controlling the horizontal direction of the substrate to be processed (W) or the support substrate (S). The control mechanism is equipped with a detection unit (122) for detecting the position of a notch in the support substrate (S) or the substrate to be processed (W). Then, the inversion unit (120) controls the horizontal direction of the support substrate (S) or the substrate to be processed (W) by moving the support substrate (S) or the substrate to be processed (W) held in the support arm (121) in the horizontal direction and detecting the position of the notch in the support substrate (S) or the substrate to be processed (W) using the detection unit (122).

[0036] A heating unit (130) for heating the substrate to be processed (W) is provided on the Y-axis forward side of the bonding area (D2). The heating unit (130) reduces the warping of the substrate to be processed (W) by heating the substrate to be processed (W).

[0037] On the X-axis side of the bonding area (D2), a conveying unit (140) is provided for conveying the substrate to be processed (W), the support substrate (S), and the polymerization substrate (T) to the transfer unit (110), the inversion unit (120), the heating unit (130), and the bonding unit (150) described later. The conveying unit (140) is positioned adjacent to the inlet / outlet port (103).

[0038] The conveying unit (140) is provided with, for example, a first conveying arm (141) and a second conveying arm (142). The first conveying arm (141) and the second conveying arm (142) are arranged in two stages from the bottom in the vertical direction and can be moved in the horizontal and vertical directions by a driving unit not shown.

[0039] The first conveying arm (141) conveys, for example, the lower surface (non-bonded surface (Wn)) of the substrate to be processed (W) or the lower surface (non-bonded surface (Sn)) of the support substrate (S). Meanwhile, the second conveying arm (142) conveys, by maintaining the outer periphery of the lower surface (bonded surface (Sj)) of the support substrate (S) that has been inverted vertically in the inversion section (120).

[0040] On the X-axis forward side of the bonding area (D2), a bonding section (150) is provided to bond a substrate to be processed (W) and a support substrate (S). The bonding section (150) bonds the substrate to be processed (W) and the support substrate (S) to form a polymerized substrate (T). The formed polymerized substrate (T) is returned from the bonding section (150) to the delivery section (110) by the first return arm (141) of the return section (140), then transferred to the delivery arm (111) via a support pin (112), and further transferred from the delivery arm (111) to the second return device (21).

[0041] Next, with reference to FIG. 5, an example of a transfer unit (110) will be described. As described above, the transfer unit (110) is equipped with a transfer arm (111) and a support pin (112). The transfer arm (111) transfers a substrate to be processed (W), a support substrate (S), or a polymerization substrate (T) between the second conveying device (21) and the support pin (112). The support pin (112) is provided in multiple locations, for example, three locations, to support the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T).

[0042] The transmission unit (110) is equipped with an arm drive unit (113). The arm drive unit (113) includes a motor, etc., and moves the transmission arm (111) in the X-axis direction. The arm drive unit (113) moves along the rail (114) (see FIG. 4) in the Y-axis direction. The transmission arm (111) can move in the horizontal direction (X-axis direction and Y-axis direction). Additionally, the arm drive unit (113) may move the transmission arm (111) in the Z-axis direction.

[0043] On the upper part of the transfer arm (111), as shown in FIG. 5, a plurality of support pins (115) are provided at four locations to support the lower surface of the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T). Additionally, on the upper part of the transfer arm (111), a guide (116) is provided to determine the position of the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T) supported by the support pins (115). The guide (116) is provided at four locations to guide the side of the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T).

[0044] The transmission unit (110) is arranged in two stages in the vertical direction, and the inversion unit (120) is arranged vertically above the transmission unit (110). The transmission arm (111) of the transmission unit (110) moves horizontally below the holding arm (121) and the control mechanism (126) of the inversion unit (120). Additionally, the support pin (112) of the transmission unit (110) is positioned below the holding arm (121) of the inversion unit (120).

[0045] Next, with reference to FIGS. 5 and 6, an example of an inversion unit (120) will be described. As described above, the inversion unit (120) is equipped with a holding arm (121) and a detection unit (122). Additionally, the inversion unit (120) is equipped with a first driving unit (123). The first driving unit (123) may include a motor, etc., to rotate the holding arm (121) around a horizontal axis and to move it in a horizontal direction (X-axis direction and Y-axis direction). Additionally, the first driving unit (123) may move the holding arm (121) in a horizontal direction by rotating the holding arm (121) around a vertical axis.

[0046] Below the first drive unit (123), a second drive unit (124), including, for example, a motor, is provided. The second drive unit (124) moves the first drive unit (123) in a vertical direction along the support column (125). By the first drive unit (123) and the second drive unit (124), the retaining arm (121) can rotate around a horizontal axis and can also move in a vertical and horizontal direction.

[0047] A control mechanism (126) is supported on the support column (125) via a support plate (127). The control mechanism (126) is provided adjacent to the holding arm (121). The control mechanism (126) controls the horizontal direction of the support substrate (S) or the substrate to be processed (W) held on the holding arm (121).

[0048] The control mechanism (126) has a support (128) and a detection unit (122). The control mechanism (126) controls the horizontal direction of the support substrate (S) or the substrate to be processed (W) by moving the support substrate (S) or the substrate to be processed (W) held in the support arm (121) in a horizontal direction and detecting the position of the notch of the support substrate (S) or the substrate to be processed (W) with the detection unit (122).

[0049] Next, with reference to FIGS. 7 to 9, an example of a conveying unit (140) will be described. As shown in FIG. 7, the conveying unit (140) is provided with a first conveying arm (141) and a second conveying arm (142) as described above. The first conveying arm (141) and the second conveying arm (142) are arranged in two stages in this order from the bottom in the vertical direction. The first conveying arm (141) and the second conveying arm (142) may have different shapes as described below.

[0050] An arm drive unit (143), including, for example, a motor, is provided at the base of the first return arm (141) and the second return arm (142). The arm drive unit (143) moves the first return arm (141) and the second return arm (142) independently in a horizontal direction. The first return arm (141), the second return arm (142), and the arm drive unit (143) are supported by a base (144). The base (144) can be moved in a vertical direction by a drive unit (not shown) including a motor.

[0051] As shown in FIG. 8, the first conveying arm (141) conveys the lower surface (non-bonding surface (Wn, Sn) in the case of the substrate to be processed (W) and the support substrate (S)) of the substrate to be processed (W) or the support substrate (S). The first conveying arm (141) has a fork shape with a tip branched into two.

[0052] On the first conveying arm (141), a plurality of resin O-rings (145) are provided, for example, at four locations. The O-rings (145) come into contact with the lower surface of the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T), and hold the lower surface of these substrates by friction. The first conveying arm (141) holds the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T) horizontally on the O-rings (145).

[0053] Additionally, on the first return arm (141), a first guide (146) and a second guide (147) are provided on the outside of the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T) held in the O-ring (145). The first guide (146) is provided at the two-branched tip of the first return arm (141). The second guide (147) is formed in an arc shape on the opposite side from the first guide (146), with the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T) in between. The first guide (146) and the second guide (147) prevent the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T) from moving away from the first return arm (141). Additionally, when the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T) is held in a suitable position by the O-ring (145), the substrate to be processed (W), the support substrate (S), or the polymerization substrate (T) does not come into contact with the first guide (146) and the second guide (147).

[0054] As shown in FIG. 9, the second conveying arm (142) conveys the outer periphery of the lower surface (bonding surface (Sj)) of the support substrate (S). That is, the second conveying arm (142) conveys the outer periphery of the bonding surface (Sj) of the support substrate (S) that has been inverted vertically by the inversion section (120). The second conveying arm (142) has a fork shape with a tip branched into two.

[0055] A plurality of holding portions (148), for example, four in number, are provided on the second conveying arm (142). The holding portions (148) have a horizontal plane that arranges the outer periphery of the bonding surface (Sj) of the supporting substrate (S), and a tapered plane that slopes outward in the diameter direction of the supporting substrate (S) as it extends upward from the horizontal plane. The tapered plane determines the horizontal position of the supporting substrate (S). The second conveying arm (142) holds the supporting substrate (S) horizontally on the holding portions (148). The second conveying arm (142) holds the outer periphery of the bonding surface (Sj) of the supporting substrate (S). Therefore, the bonding surface (Sj) can be prevented from being contaminated by particles attached to the second conveying arm (142), for example.

[0056] Next, with reference to FIG. 10, an example of a heating unit (130) will be described. The heating unit (130) comprises, for example, a heating plate (131), an annular holder (132) that accommodates the heating plate (131) and maintains the outer circumference of the heating plate (131), and a roughly tubular support ring (133) that surrounds the outer circumference of the holder (132).

[0057] On the upper part of the heating plate (131), support pins (134) are provided at multiple locations, for example, three locations. The support pins (134) support the substrate to be processed (W) and form a gap between the substrate to be processed (W) and the heating plate (131). The size (H1) of the gap is, for example, 0.4 mm or more.

[0058] The heating plate (131) has a roughly disc shape and heats the substrate to be processed (W) through a support pin (134). The heating plate (131) has, for example, a heating mechanism (135) built into it. The heating mechanism (135) includes, for example, a heater. The heating temperature of the heating plate (131) is controlled, for example, by a control device (90), so that the substrate to be processed (W) placed on the heating plate (131) is heated to a predetermined temperature.

[0059] Below the heating plate (131), for example, three lifting pins (136) are provided to support and raise the substrate (W) to be processed from below. The lifting pins (136) can move up and down by means of a lifting drive unit (137). Near the center of the heating plate (131), for example, three through holes (138) are formed that penetrate the heating plate (131) in the thickness direction. And, the lifting pins (136) are inserted through the through holes (138) and are made to protrude from the upper surface of the heating plate (131).

[0060] Next, with reference to FIGS. 11 and FIGS. 12, a joint portion (150) will be described. The joint portion (150) comprises a first retaining portion (151) and a second retaining portion (152) positioned above the first retaining portion (151) and opposite to the first retaining portion (151).

[0061] The first holding part (151) and the second holding part (152) are, for example, electrostatic chucks and hold the substrate to be processed (W) and the support substrate (S) by electrostatic adsorption. The first holding part (151) holds the substrate to be processed (W) from below, and the second holding part (152) holds the support substrate (S) from above. The substrate to be processed (W) and the support substrate (S) are held in the first holding part (151) and the second holding part (152) with their bonding surfaces (Wj, Sj) facing each other.

[0062] Additionally, the first retaining part (151) and the second retaining part (152) may be equipped with a vacuum adsorption part that vacuum adsorbs the support substrate (S) and the substrate to be processed (W) in addition to or instead of the electrostatic adsorption part that electrostatically adsorbs the support substrate (S) and the substrate to be processed (W).

[0063] The joint portion (150) is equipped with a first heating mechanism (153) and a second heating mechanism (154). The first heating mechanism (153) is embedded in the first holding portion (151) and heats the first holding portion (151) to heat the substrate to be processed (W) held in the first holding portion (151) to a predetermined temperature. Additionally, the second heating mechanism (154) is embedded in the second holding portion (152) and heats the second holding portion (152) to heat the supporting substrate (S) held in the second holding portion (152) to a predetermined temperature.

[0064] The joint portion (150) is provided with a pressurizing portion (155). The pressurizing portion (155) pressurizes the support substrate (S) by moving the second holding portion (152) vertically downward, thereby bringing it into contact with the substrate to be processed (W). Additionally, the pressurizing portion (155) may move the first holding portion (151) and the second holding portion (152) relative to each other, or it may move the first holding portion (151). The pressurizing portion (155) is provided with a base member (156), a pressure vessel (157), a gas supply pipe (158), and a gas supply source (159). The base member (156) is mounted on the ceiling surface inside the second chamber portion (162), which will be described later.

[0065] The pressure vessel (157) is constructed, for example, by a stainless steel bellows that is vertically extendable. The lower end of the pressure vessel (157) is fixed to the upper surface of the second retaining member (152), and the upper end of the pressure vessel (157) is fixed to the lower surface of the base member (156). One end of the gas supply pipe (158) is connected to the pressure vessel (157) via the base member (156) and the second chamber member (162) described later, and the other end is connected to the gas supply source (159).

[0066] The pressure vessel (157) extends the pressure vessel (157) and lowers the second holding part (152) by supplying gas from the gas supply source (159) through the gas supply pipe (158) into the pressure vessel (157). As a result, the support substrate (S) comes into contact with the substrate to be processed (W) and is pressurized. The pressure applied to the substrate to be processed (W) and the support substrate (S) is controlled by adjusting the pressure of the gas supplied to the pressure vessel (157).

[0067] The joint portion (150) is equipped with a chamber (160), a moving mechanism (170), a pressure reduction portion (180), a first imaging portion (191), and a second imaging portion (192).

[0068] The chamber (160) is a processing vessel capable of sealing the interior and is equipped with a first chamber section (161) and a second chamber section (162). The first chamber section (161) is a cylindrical vessel with a bottom that is open at the top, and a first retaining section (151) and the like are accommodated inside. Additionally, the second chamber section (162) is a cylindrical vessel with a bottom that is open at the bottom, and a second retaining section (152), a pressure vessel (157), and the like are accommodated inside.

[0069] The second chamber section (162) is configured to be vertically movable by a lifting mechanism not shown, such as an air cylinder. By lowering the second chamber section (162) by the lifting mechanism and bringing it into contact with the first chamber section (161), a sealed space is formed inside the chamber (160). Additionally, a sealing member (163) is provided on the contact surface of the second chamber section (162) with the first chamber section (161) to ensure airtightness of the chamber (160). For example, an O-ring is used as the sealing member (163).

[0070] A moving mechanism (170) is provided on the outer periphery of the second chamber section (162) and moves the second holding section (152) in a horizontal direction through the second chamber section (162). A plurality (e.g., 5) of moving mechanisms (170) are provided on the outer periphery of the second chamber section (162), and 4 of the 5 moving mechanisms (170) are used for horizontal movement of the second holding section (152), and the remaining 1 is used for rotation around the vertical axis of the second holding section (152).

[0071] The moving mechanism (170) comprises a cam (171) that moves the second retaining member (152) by contacting the outer periphery of the second chamber part (162), and a rotary driving part (173) that rotates the cam (171) via a shaft (172). The cam (171) is provided eccentrically with respect to the center axis of the shaft (172). By rotating the cam (171) by the rotary driving part (173), the center position of the cam (171) relative to the second retaining member (152) is moved, and the second retaining member (152) can be moved in a horizontal direction.

[0072] The pressure reduction section (180) is provided, for example, at the bottom of the first chamber section (161) and reduces the pressure inside the chamber (160). The pressure reduction section (180) is equipped with an intake pipe (181) for drawing in the atmosphere inside the chamber (160) and an intake device (182), such as a vacuum pump, connected to the intake pipe (181).

[0073] The first imaging unit (191) is positioned below the second holding unit (152) and images the lower surface (bonding surface (Sj)) of the support substrate (S) held by the second holding unit (152). Additionally, the second imaging unit (192) is positioned above the first holding unit (151) and images the upper surface (bonding surface (Wj)) of the substrate to be processed (W) held by the first holding unit (151).

[0074] The first imaging unit (191) and the second imaging unit (192) are configured to be movable in a horizontal direction by a moving mechanism not shown, and enter the chamber (160) before lowering the second chamber unit (162) to image the substrate to be processed (W) and the support substrate (S). The image data of the first imaging unit (191) and the second imaging unit (192) is transmitted to the control device (90). In addition, for the first imaging unit (191) and the second imaging unit (192), for example, a wide-angle CCD camera is used for each.

[0075] Next, with reference to FIG. 13, an example of the operation of the bonding device (80) will be described. When a substrate to be processed (W) is transferred to the transfer arm (111) of the transfer unit (110) by the second transfer device (21) (see FIG. 1), the transfer arm (111) transfers the substrate to be processed (W) to the support pin (112). Afterward, the substrate to be processed (W) is transferred from the support pin (112) to the inversion unit (120) by the first transfer arm (141) of the transfer unit (140).

[0076] The substrate to be processed (W) returned to the inversion unit (120) has its horizontal direction adjusted by detecting the position of the notch by the detection unit (122) of the inversion unit (120) (step (S101)). Afterwards, the substrate to be processed (W) is returned from the inversion unit (120) to the heating unit (130) by the first return arm (141) of the return unit (140).

[0077] The substrate to be processed (W) returned to the heating unit (130) is heated to a predetermined temperature by the heating plate (131) of the heating unit (130) (step (S102)). By doing so, the warping of the substrate to be processed (W) is reduced. Afterward, the substrate to be processed (W) is returned from the heating unit (130) to the first holding unit (151) of the bonding unit (150) by the first returning arm (141) of the returning unit (140), and is adsorbed and held by the first holding unit (151) (step (S103)). The first holding unit (151) is heated to a desired temperature in advance by the first heating mechanism (153).

[0078] Meanwhile, when the support substrate (S) is transferred to the transfer arm (111) of the transfer unit (110) by the second transfer device (21) (see FIG. 1), the transfer arm (111) transfers the support substrate (S) to the support pin (112). Afterward, the support substrate (S) is transferred from the support pin (112) to the inversion unit (120) by the first transfer arm (141) of the transfer unit (140).

[0079] The support substrate (S) returned to the inversion unit (120) has its horizontal orientation adjusted by the detection unit (122) of the inversion unit (120) detecting the position of the notch (step (S104)). Afterwards, the support substrate (S) is inverted vertically by the inversion unit (120) (step (S105)). As a result, the bonding surface (Sj) of the support substrate (S) is oriented downward.

[0080] Afterward, the support substrate (S) is returned from the inversion section (120) to the second holding section (152) of the joint section (150) by the second return arm (142) of the return section (140), and is adsorbed and held by the second holding section (152) (step (S106)). The second holding section (152) is heated to a desired temperature in advance by the second heating mechanism (154).

[0081] When the substrate to be processed (W) and the support substrate (S) are brought into the joint (150), horizontal alignment of the substrate to be processed (W) and the support substrate (S) is performed (step (S107)). A plurality of reference points are formed in advance on the substrate to be processed (W) and the support substrate (S). The joint (150) moves the first imaging unit (191) and the second imaging unit (192) shown in FIG. 11 in a horizontal direction to capture the reference points of the substrate to be processed (W) and the support substrate (S), respectively. The joint (150) adjusts the horizontal position of the support substrate (S) using a moving mechanism (170) so that the position of the reference point included in the image captured by the first imaging unit (191) and the position of the reference point included in the image captured by the second imaging unit (192) coincide. That is, by rotating the cam (171) by the rotary drive unit (173) and moving the second holding unit (152) in the horizontal direction through the second chamber unit (162), the horizontal position of the support substrate (S) is adjusted.

[0082] Afterward, the joining part (150) removes the first imaging part (191) and the second imaging part (192) from the chamber (160) and lowers the second chamber part (162). As a result, the second chamber part (162) comes into contact with the first chamber part (161), forming a sealed space within the chamber (160). Afterward, the joining part (150) depressurizes the inside of the chamber (160) by drawing in the atmosphere inside the chamber (160) using the depressurization part (180).

[0083] Next, the bonding part (150) lowers the second holding part (152) using the pressurizing part (155) to bring the substrate to be processed (W) and the supporting substrate (S) into contact (step (S108)). In addition, the bonding part (150) pressurizes the substrate to be processed (W) and the supporting substrate (S) by supplying gas to the pressure vessel (157) to bring the inside of the pressure vessel (157) to a desired pressure (step (S109)).

[0084] The adhesive (G) applied to the bonding surface (Sj) of the support substrate (S) is softened by heating, and by pressing the support substrate (S) against the substrate to be treated (W) for a set time with a desired pressure, the substrate to be treated (W) and the support substrate (S) are bonded to form a polymerized substrate (T). At this time, since the chamber (160) is in a reduced pressure atmosphere, the formation of bubbles between the substrate to be treated (W) and the support substrate (S) can be suppressed.

[0085] Afterward, the polymerized substrate (T) is returned from the bonding unit (150) to the delivery unit (110) by the first return arm (141) of the return unit (140), then transferred to the delivery arm (111) via the support pin (112), and further transferred from the delivery arm (111) to the second return device (21). The second return device (21) removes the polymerized substrate (T) from the bonding device (80) (step (S110)).

[0086] According to the present embodiment, a heating unit (130) is provided inside the bonding device (80), and before the bonding unit (150) bonds the substrate to be processed (W) and the support substrate (S), the heating unit (130) heats the substrate to be processed (W). By heating the substrate to be processed (W) with the heating unit (130), the warping of the substrate to be processed (W) that occurs during the cooling process is reduced. Afterward, if the substrate to be processed (W) is adsorbed and held by the first holding unit (151), the horizontal alignment precision of the substrate to be processed (W) and the support substrate (S) can be improved. Thus, the bonding precision can be improved.

[0087] Next, with reference to FIG. 14, a conveying unit (140) according to a first modified example will be described. The conveying unit (140) may be equipped with a second heating unit (200) that heats a substrate to be processed (W) heated by a heating unit (130). During the conveying of the substrate to be processed (W), the temperature of the substrate to be processed (W) can be maintained by the second heating unit (200), thereby preventing the substrate to be processed (W) from bending again.

[0088] The second heating unit (200) includes, for example, a heating plate (201) positioned at a distance from the substrate to be processed (W). The heating plate (201) is horizontally positioned above the substrate to be processed (W) which is held by the first conveying arm (141). A gap is formed between the heating plate (201) and the substrate to be processed (W), and the heating plate (201) does not come into contact with the bonding surface (Wj) of the substrate to be processed (W). Therefore, it is possible to prevent the bonding surface (Wj) from being contaminated by particles attached to the heating plate (201).

[0089] The heating plate (201) is, for example, in the shape of a disc with a diameter approximately equal to that of the substrate to be processed (W) or a diameter larger than that of the substrate to be processed (W). The heating plate (201) has, for example, a heating mechanism (202) built into it. The heating mechanism (202) includes, for example, a heater. The heating temperature of the heating plate (201) is controlled, for example, by a control device (90), so that the substrate to be processed (W) placed below the heating plate (201) is maintained at a predetermined temperature.

[0090] Additionally, the second heating unit (200) may be equipped with a heating nozzle instead of a heating plate (201). The heating nozzle heats the substrate to be processed (W) by discharging gas heated to a predetermined temperature toward the substrate to be processed (W). In this case as well, the substrate to be processed (W) can be heated non-contactually. The gas discharged by the heating nozzle is, for example, an inert gas such as nitrogen gas or argon gas. If the heating temperature is low, air may be used.

[0091] Next, with reference to FIG. 15, a conveying unit (140) according to a second modified example will be described. The conveying unit (140) may be equipped with a bending measuring unit (210) for measuring the bending of a substrate to be processed (W). The bending measuring unit (210) includes, for example, a camera, a laser interferometer, or a laser displacement meter. The bending of the substrate to be processed (W) is performed while the substrate to be processed (W) is supported so as to be slidably moved at multiple points, and is performed without adsorbing the substrate to be processed (W). The bending measuring unit (210) transmits the measured data to a control device (90).

[0092] When the conveying unit (140) is equipped with a bending measuring unit (210), the bending of the substrate to be processed (W) can be checked during the conveying of the substrate to be processed (W). For example, when the conveying unit (140) is not equipped with a second heating unit (200), if the conveying unit (140) is equipped with a bending measuring unit (210), it can be checked whether the temperature of the substrate to be processed (W) decreases during the conveying of the substrate to be processed (W) and whether the bending of the substrate to be processed (W) increases. In addition, the conveying unit (140) may be equipped with both the second heating unit (200) and the bending measuring unit (210).

[0093] If the bending of the substrate to be processed (W) measured by the bending measuring unit (210) is outside the allowable range, the control device (90) may return the substrate to be processed (W) to the heating unit (130) via the return unit (140) and reheat the substrate to be processed (W) via the heating unit (130). This allows the bending of the substrate to be processed (W) to be brought within the allowable range. Additionally, if the bending of the substrate to be processed (W) measured by the bending measuring unit (210) is within the allowable range, the control device (90) returns the substrate to be processed (W) via the return unit (140) to the first holding unit (151) of the bonding unit (150).

[0094] Additionally, if the bending of the substrate (W) measured by the bending measuring unit (210) is outside the allowable range, the control device (90) may change the heating temperature or heating time for heating the substrate (W) by the heating unit (130). The heating temperature after the change is set higher than the heating temperature before the change. Additionally, the heating time after the change is set longer than the heating time before the change. After the next time, the bending of the substrate (W) can be brought within the allowable range.

[0095] Additionally, the bending measuring unit (210) is provided in the conveying unit (140) in this embodiment, but may also be provided in the heating unit (130). Before the conveying unit (140) receives the substrate to be processed (W) from the heating unit (130), it can check whether the bending of the substrate to be processed (W) is within an allowable range. If the bending of the substrate to be processed (W) is outside the allowable range, the control device (90) changes the heating temperature or heating time for heating the substrate to be processed (W) to the heating unit (130). The bending measuring unit (210) may be provided in both the heating unit (130) and the conveying unit (140).

[0096] Additionally, in the case where the return unit (140) is equipped with both the second heating unit (200) and the bending measuring unit (210), if the bending of the substrate to be processed (W) measured by the bending measuring unit (210) is outside the allowable range, the control device (90) may change the setting of the heating temperature or heating time for heating the substrate to be processed (W) with the second heating unit (200). In this case as well, the bending of the substrate to be processed (W) can be brought within the allowable range.

[0097] Although embodiments of the joining method and joining device according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope described in the claims. These also naturally fall within the technical scope of the present disclosure.

Claims

Claim 1 A bonding method comprising adsorbing and holding a first substrate including a glass substrate and a resin layer formed to be in contact with the glass substrate by a first holding member, adsorbing and holding a second substrate by a second holding member, and pressing the first substrate and the second substrate by bringing them into contact with an adhesive by moving the first holding member and the second holding member relative to each other, wherein the bonding method comprises heating the first substrate with a heating member and returning the first substrate using a returning member that returns the first substrate from the heating member to the first holding member, and reducing the warping of the first substrate by reducing the difference in thermal expansion between the glass substrate and the resin layer by heating the first substrate with the heating member before adsorbing and holding the first substrate with the first holding member. Claim 2 A bonding method according to claim 1, wherein the conveying unit includes a second heating unit that heats the first substrate, and the first substrate is heated by the second heating unit. Claim 3 A bonding method according to claim 1 or 2, wherein the conveying unit includes a bending measuring unit for measuring the bending of the first substrate, and the bending of the first substrate is measured by the bending measuring unit. Claim 4 A bonding method according to claim 3, wherein if the bending of the first substrate measured by the bending measuring unit is outside the allowable range, the first substrate is heated again by the heating unit. Claim 5 A bonding method according to claim 3, wherein if the bending of the first substrate measured by the bending measuring unit is outside the allowable range, the heating temperature or heating time for heating the first substrate with the heating unit is changed. Claim 6 A bonding device comprising a glass substrate and a resin layer formed to be in contact with the glass substrate, and bonding a first substrate and a second substrate by means of an adhesive, the bonding device comprising: a first holding part for adsorbing and holding the first substrate; a second holding part for adsorbing and holding the second substrate; a pressing part for pressing the first substrate and the second substrate by means of the adhesive by moving the first holding part and the second holding part relative to each other; a heating part for heating the first substrate; a conveying part for conveying the first substrate from the heating part to the first holding part; and a control part for controlling the pressing part, the heating part, and the conveying part, wherein the control part reduces the difference in thermal expansion between the glass substrate and the resin layer by heating the first substrate with the heating part before adsorbing and holding the first substrate with the first holding part, thereby reducing the warping of the first substrate. Claim 7 In claim 6, the bonding device comprises a second heating unit that heats the first substrate, wherein the conveying unit comprises the second heating unit. Claim 8 A bonding device according to claim 6 or 7, wherein the conveying unit includes a bending measuring unit for measuring the bending of the first substrate. Claim 9 In claim 8, the bonding device wherein the control unit reheats the first substrate with the heating unit when the bending of the first substrate measured by the bending measuring unit is outside the allowable range. Claim 10 A bonding device according to claim 8, wherein the control unit changes the heating temperature or heating time for heating the first substrate with the heating unit when the bending of the first substrate measured by the bending measuring unit is outside the allowable range.

Images