Multiaxial magnetoresistance sensor apparatus and manufacting method thereof

KR103022005B1Active Publication Date: 2026-09-21DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY
View PDF 2 Cites 0 Cited by

Patent Information

Application Number
KR1020250101241
Authority / Receiving Office
KR · KR
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-07-25
Publication Date
2026-09-21
Estimated Expiration
2045-07-25

Smart Images

  • Figure 112025084747089-PAT00007_ABST
    Figure 112025084747089-PAT00007_ABST
Patent Text Reader

Abstract

The present invention relates to a multi-axis magnetic field sensor device and a method for manufacturing the same. According to one embodiment of the present invention, the multi-axis magnetic field sensor device comprises a shape anisotropic sensor including a first measuring sensor, a second measuring sensor, a third measuring sensor, and a fourth measuring sensor, and a magnetic flux guide coupled to the shape anisotropic sensor. The first measuring sensor and the second measuring sensor detect a magnetic field in the x-axis direction, the third measuring sensor and the fourth measuring sensor detect a magnetic field in the y-axis direction, and the magnetic flux guide induces a magnetic field in the z-axis direction in the x and y-axis plane directions of the shape anisotropic sensor. The first measuring sensor, the second measuring sensor, the third measuring sensor, and the fourth measuring sensor can detect the induced magnetic field in the z-axis direction.
Need to check novelty before this filing date? Find Prior Art

Description

Technology Field

[0001] The present invention relates to a multi-axis magnetic field sensor device and a method for manufacturing the same, and more specifically, to a technology that provides a multi-axis magnetic field sensor device capable of detecting an external magnetic field in multiple axes (x-axis, y-axis, and z-axis) with high sensitivity using shape anisotropy of a magnetic material and a magnetic flux guide (MFG), and a method for manufacturing the same. Background Technology

[0002] A magnetic sensor is a device that detects changes in an applied magnetic field and converts them into electrical signals.

[0003] Hall sensors are commercially available and widely used magnetic sensors. Hall sensors are devices that convert changes in a magnetic field passing through a cross-shaped semiconductor layer into a voltage difference, and they are currently being used in the image stabilization function of smartphone cameras.

[0004] In addition to Hall sensors, there are magnetoresistance sensors that utilize magnetoresistance, which take advantage of the phenomenon where the electrical resistance of the constituent material changes depending on the presence or absence of a magnetic field.

[0005] In the prior art, when a magnetic field perpendicular to a plane on which a magnetic layer is formed is applied, a mechanism is used to detect a change in resistance in a direction parallel to the magnetic field.

[0006] If a sensing structure including an x-axis or a y-axis is to be implemented, a method of sensing by providing multiple magnetic sensors can be proposed, but this entails the burden of having to provide multiple sensors and separately provide multiple circuits for driving them or detecting the operation.

[0007] Meanwhile, another conventional technology is a device that applies a classically widely used heat treatment method and detects a magnetic field through a system that heats a sample by applying a magnetic field at a high temperature.

[0008] It consists of a heating device, a magnetic field generator, and a vacuum device, so the heating device heats the sample, and the magnetic field generator generates a magnetic field and applies the magnetic field uniformly to the sample.

[0009] The magnetic field is applied in only one direction, and the vacuum device creates a vacuum in the chamber where the sample is placed.

[0010] Another conventional technology forms a biaxial magnetic field sensor by controlling the peening direction using the shape anisotropy of a ferromagnetic layer.

[0011] It consists of a magnetic tunnel junction sensor, a heating device, and a magnetic field generator. The magnetic tunnel junction sensor is composed of a ferromagnetic layer, an insulating intermediate layer, and a ferromagnetic layer. The heating device heats the sample, and the magnetic field generator generates a magnetic field. When the magnetic field is uniformly applied to the sample, a sensor with a pattern in a specific direction is deposited and then heated to form pinning in that direction; at this time, the orientation magnetic field sets and adjusts the magnetization in a specific direction.

[0012] After removing the orientation magnetic field, the pinned magnetization is adjusted by selectively applying a compensating magnetic field (for offset adjustment).

[0013] Conventional technology creates anisotropy (pinning) of a magnetic material by applying a magnetic field in only one direction using a magnetic field generating device, and performs additional processes to form anisotropy in multiple axes.

[0014] In addition, conventional technology corrects cases where the pinning direction deviates from the intended direction using a compensating magnetic field; however, since this compensating magnetic field affects the other sensor when correcting one axis sensor, it can unintentionally deform the pinning direction.

[0015] Furthermore, conventional technology establishes orthogonal peening through shape anisotropy-based heat treatment; however, in actual implementation, the combined effects of process deviations and securing orthogonality lead to issues such as failure to maintain orthogonality and non-uniformity in sensor performance, resulting in a problem where only planar magnetic field measurement is possible. Prior art literature

[0016] Korean Registered Patent No. 10-2791525, "Multi-axis magnetoresistance sensor annealing system, multi-axis magnetoresistance sensor and method for manufacturing multi-axis magnetoresistance sensor" Korean Registered Patent No. 10-2242113, "3-axis magnetic field measuring device" Korean Published Patent No. 10-2023-0117352, "Magnetoresistive element for detecting a magnetic field of the Z-axis" Korean Published Patent No. 10-2023-0117352, "Magnetoresistive element for detecting a magnetic field of the Z-axis" The problem to be solved

[0017] The present invention aims to provide a multi-axis magnetic field sensor device capable of detecting an external magnetic field in multiple axes (x-axis, y-axis, and z-axis) with high sensitivity using the shape anisotropy of a magnetic material and a magnetic flux guide (MFG), and a method for manufacturing the same.

[0018] The present invention aims to provide a multi-axis magnetic field sensor device that can impart anisotropy in various directions through shape anisotropy based on a ferromagnetic layer and an antiferromagnetic layer, thereby reducing process time and improving productivity.

[0019] The present invention aims to improve the reliability and stability of a multi-axis magnetic field sensor device by increasing production yield and maintaining quality, by reducing the possibility of defects occurring during the thin film formation process through a single process for heat treatment for shape anisotropy based on a ferromagnetic layer and an antiferromagnetic layer.

[0020] The present invention aims to provide a multi-axis magnetic field sensor device and a method for manufacturing the same, which can simultaneously realize process simplification, ease of sensor alignment, and 3-axis magnetic field sensing, and is advantageously applicable to mobile, vehicle, and medical sensor systems requiring high integration and miniaturization. means of solving the problem

[0021] According to one embodiment of the present invention, a multi-axis magnetic field sensor device comprises a shape anisotropy sensor including a first measurement sensor, a second measurement sensor, a third measurement sensor, and a fourth measurement sensor, and a magnetic flux guide coupled to the shape anisotropy sensor, wherein the first measurement sensor and the second measurement sensor detect a magnetic field in the x-axis direction, the third measurement sensor and the fourth measurement sensor detect a magnetic field in the y-axis direction, and the magnetic flux guide induces a magnetic field in the z-axis direction in the x and y-axis plane directions of the shape anisotropy sensor, and the first measurement sensor, the second measurement sensor, the third measurement sensor, and the fourth measurement sensor can detect the induced magnetic field in the z-axis direction.

[0022] The above-described shape anisotropic sensor may include a plurality of sensor parts in which a ferromagnetic layer is formed on a substrate, an antiferromagnetic layer is formed on the ferromagnetic layer or the antiferromagnetic layer is formed and the ferromagnetic layer is formed on the antiferromagnetic layer, a plurality of conductive strips arranged at a pre-set angle with a barbverpole structure on each of the plurality of sensor parts, and electrodes formed on both sides of each of the plurality of sensor parts.

[0023] The plurality of conductive strips are arranged at an angle of 45 to 135 degrees with respect to the long axis direction of any one of the plurality of sensor parts, and the current path can be controlled according to the arranged angle.

[0024] Each of the above plurality of sensor parts has shape anisotropy based on the ferromagnetic layer and the antiferromagnetic layer, forms an exchange bias through the interaction between the ferromagnetic layer and the antiferromagnetic layer, and the magnetization changes with respect to an external magnetic field due to the anisotropic magnetoresistance (AMR) and planar Hall effect, and can measure the magnetic field using the resistance that changes according to the changed magnetization.

[0025] The first measurement sensor and the second measurement sensor are orthogonally arranged with respect to the third measurement sensor and the fourth measurement sensor, and through a heat treatment process based on shape anisotropy, exchange biases of different directions are formed in directions orthogonally to each other between the sensor parts to detect the magnetic field in the x-axis direction, and the third measurement sensor and the fourth measurement sensor can detect the magnetic field in the y-axis direction according to the exchange bias.

[0026] The first measurement sensor and the second measurement sensor detect the z-axis direction magnetic field induced from the outside through the magnetic flux guide in the z-axis direction magnetic field in the x-axis plane direction, and the third measurement sensor and the fourth measurement sensor detect the z-axis direction magnetic field induced from the outside through the magnetic flux guide in the y-axis plane direction magnetic field.

[0027] The first measurement sensor and the second measurement sensor may be applied a magnetic field in a direction opposite to the z-axis direction magnetic field in the x-axis plane direction, and the third measurement sensor and the fourth measurement sensor may be applied a magnetic field in a direction opposite to the z-axis direction magnetic field in the y-axis plane direction.

[0028] The strength of the magnetic field in the x-axis direction can be measured by combining the strengths of the magnetic fields measured by each of the first measurement sensor and the second measurement sensor, and calculating the ratio of the combined rate of change of the magnetic field of the magnetic flux guide in the x-axis direction to the number of measurement sensors for the combined strength.

[0029] The strength of the magnetic field in the y-axis direction can be measured by combining the strengths of the magnetic fields measured by each of the third measurement sensor and the fourth measurement sensor, and calculating the ratio of the combined rate of change of the magnetic field of the magnetic flux guide in the y-axis direction to the number of measurement sensors for the combined strength.

[0030] The strength of the magnetic field in the z-axis direction can be measured by combining the strengths of the magnetic fields measured by the first measurement sensor and the second measurement sensor or the third measurement sensor and the fourth measurement sensor, and calculating the ratio of the combined rate of change of the magnetic field of the magnetic flux guide in the z-axis direction to the number of measurement sensors for the combined strength.

[0031] A method for manufacturing a multi-axis magnetic field sensor device according to an embodiment of the present invention may include a shape anisotropic sensor comprising a first measuring sensor, a second measuring sensor, a third measuring sensor, and a fourth measuring sensor, and a magnetic flux guide coupled thereto on the shape anisotropic sensor, the method comprising the steps of: creating the shape anisotropic sensor; arranging the horizontal axes of the first measuring sensor and the second measuring sensor so as to be parallel to the x-axis direction; arranging the horizontal axes of the third measuring sensor and the fourth measuring sensor so as to be parallel to the y-axis direction; performing a shape heat treatment on the shape anisotropic sensor; and coupling the magnetic flux guide to the upper part of the shape anisotropic sensor.

[0032] The step of generating the shape anisotropic sensor may include forming a plurality of sensor parts, wherein a ferromagnetic layer is formed on a substrate for each of the first measurement sensor, the second measurement sensor, the third measurement sensor, and the fourth measurement sensor, and an antiferromagnetic layer is formed on the ferromagnetic layer or the antiferromagnetic layer is formed and the ferromagnetic layer is formed on the antiferromagnetic layer; arranging a conductive strip having a barbverpole structure at a predetermined angle on each of the plurality of sensor parts; and forming electrodes on both sides of each of the plurality of sensor parts.

[0033] The plurality of conductive strips are arranged at an angle of 45 to 135 degrees with respect to the long axis direction of any one of the plurality of sensor parts, and the current path can be controlled according to the arranged angle.

[0034] Each of the above plurality of sensor parts has shape anisotropy based on the ferromagnetic layer and the antiferromagnetic layer, forms an exchange bias through the interaction between the ferromagnetic layer and the antiferromagnetic layer, and the magnetization changes with respect to an external magnetic field due to the anisotropic magnetoresistance (AMR) and planar Hall effect, and can measure the magnetic field using the resistance that changes according to the changed magnetization.

[0035] The first measurement sensor and the second measurement sensor detect a magnetic field in the x-axis direction, the third measurement sensor and the fourth measurement sensor detect a magnetic field in the y-axis direction, the magnetic flux guide induces a magnetic field in the z-axis direction in the x and y-axis plane directions of the shape anisotropy sensor, and the first measurement sensor, the second measurement sensor, the third measurement sensor and the fourth measurement sensor can detect the induced magnetic field in the z-axis direction.

[0036] The first measurement sensor and the second measurement sensor are orthogonally arranged with respect to the third measurement sensor and the fourth measurement sensor, and through a heat treatment process based on shape anisotropy, exchange biases of different directions are formed in directions orthogonally to each other between the sensor parts to detect the x-axis direction magnetic field, and the third measurement sensor and the fourth measurement sensor detect the x-axis direction magnetic field according to the exchange bias, and the first measurement sensor and the second measurement sensor detect the z-axis direction magnetic field induced from the outside through the magnetic flux guide in the x-axis plane direction, and the third measurement sensor and the fourth measurement sensor can detect the z-axis direction magnetic field induced from the outside through the magnetic flux guide in the y-axis plane direction. Effects of the invention

[0037] The present invention can provide a multi-axis magnetic field sensor device capable of detecting an external magnetic field in multiple axes (x-axis, y-axis, and z-axis) with high sensitivity by utilizing the shape anisotropy of a magnetic material and a magnetic flux guide (MFG), and a method for manufacturing the same.

[0038] The present invention can impart anisotropy in various directions through shape anisotropy based on a ferromagnetic layer and an antiferromagnetic layer, thereby providing a multi-axis magnetic field sensor device with reduced process time and improved productivity.

[0039] The present invention can improve the reliability and stability of a multi-axis magnetic field sensor device by reducing the possibility of defects occurring during the thin film formation process and maintaining production yield and quality by processing the heat treatment process for shape anisotropy based on a ferromagnetic layer and an antiferromagnetic layer as a single process.

[0040] The present invention can simultaneously realize process simplification, ease of sensor alignment, and 3-axis magnetic field sensing, and can provide a multi-axis magnetic field sensor device and a method for manufacturing the same that are advantageously applicable to mobile, vehicle, and medical sensor systems requiring high integration and miniaturization. Brief explanation of the drawing

[0041] FIGS. 1 and FIGS. 2 are drawings illustrating a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIGS. 3A and 3B are drawings illustrating a sensor part in a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIGS. 4a and 4b are drawings illustrating a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIG. 5 is a diagram illustrating a conductive strip in a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIG. 6 is a diagram illustrating a shape annealing system for shape heat treatment of a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIG. 7 is a diagram illustrating the energy potential according to the magnetization angle of the sensor part in a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIGS. 8a to 8c are drawings illustrating a multi-axis magnetic field sensing mechanism of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIG. 9 is a drawing illustrating an optical image of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIGS. 10a and FIGS. 10b are drawings illustrating the output signal of a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIG. 11 is a diagram illustrating the response characteristics of the x-axis and y-axis of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIG. 12 is a diagram illustrating the measurement of noise spectrum density (NSD) of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIGS. 13a and FIGS. 13b are drawings illustrating the magnetic field sensing capability of a multi-axis magnetic field sensor device according to an embodiment of the present invention. FIG. 14 is a drawing illustrating a method for manufacturing a multi-axis magnetic field sensor device according to an embodiment of the present invention. Specific details for implementing the invention

[0042] Specific structural or functional descriptions of embodiments according to the concept of the present invention disclosed herein are provided merely for the purpose of explaining embodiments according to the concept of the present invention, and embodiments according to the concept of the present invention may be implemented in various forms and are not limited to the embodiments described herein.

[0043] Embodiments according to the concept of the present invention may be subject to various modifications and may take various forms; therefore, embodiments are illustrated in the drawings and described in detail in this specification. However, this is not intended to limit the embodiments according to the concept of the present invention to specific disclosed forms, and includes modifications, equivalents, or substitutions that fall within the spirit and scope of the present invention.

[0044] Terms such as "first" or "second" may be used to describe various components, but said components should not be limited by said terms. For the sole purpose of distinguishing one component from another, for example, without departing from the scope of rights according to the concept of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component.

[0045] When it is stated that one component is "connected" or "joined" to another component, it should be understood that while it may be directly connected or joined to that other component, there may also be other components in between. Conversely, when it is stated that one component is "directly connected" or "directly joined" to another component, it should be understood that there are no other components in between. Expressions describing the relationships between components, such as "between," "exactly between," or "directly adjacent to," should be interpreted in the same way.

[0046] The terms used herein are used merely to describe specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as “comprising” or “having” are intended to specify the existence of the described features, numbers, stages, actions, components, parts, or combinations thereof, and should be understood as not precluding the existence or addition of one or more other features, numbers, stages, actions, components, parts, or combinations thereof.

[0047] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this specification.

[0048] Hereinafter, embodiments will be described in detail with reference to the attached drawings. However, the scope of the patent application is not limited or restricted by these embodiments. Identical reference numerals in each drawing indicate identical components.

[0050] FIGS. 1 and FIGS. 2 are drawings illustrating a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0051] FIGS. 1 and 2 illustrate the components and structure of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0052] FIG. 1 illustrates a three-dimensional view of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0053] Referring to FIG. 1, a multi-axis magnetic field sensor device (100) according to one embodiment of the present invention includes a shape anisotropy sensor and a magnetic flux guide (120).

[0054] For example, the shape anisotropy sensor includes a first measurement sensor (110), a second measurement sensor (111), a third measurement sensor (112), and a fourth measurement sensor (113).

[0055] The magnetic flux guide (120) is coupled to the shape anisotropy sensor.

[0056] That is, the magnetic flux guide (120) is formed on the first measuring sensor (110), the second measuring sensor (111), the third measuring sensor (112), and the fourth measuring sensor (113).

[0057] The first measurement sensor (110) and the second measurement sensor (111) detect a magnetic field in the x-axis direction.

[0058] The third measurement sensor (112) and the fourth measurement sensor (113) detect a magnetic field in the y-axis direction.

[0059] The magnetic flux guide (120) induces a magnetic field in the z-axis direction in the x and y-axis plane directions of the shape anisotropy sensor.

[0060] The first measurement sensor (110), the second measurement sensor (111), the third measurement sensor (112), and the fourth measurement sensor (113) detect an induced magnetic field in the z-axis direction.

[0061] The shape anisotropy sensor may include a plurality of sensor parts in which a ferromagnetic layer is formed on a substrate, an antiferromagnetic layer is formed on the ferromagnetic layer or an antiferromagnetic layer is formed and a ferromagnetic layer is formed on the antiferromagnetic layer, a plurality of conductive strips arranged at a preset angle with a barbverpole structure on each of the plurality of sensor parts, and electrodes formed on both sides of each of the plurality of sensor parts.

[0062] The structure of the shape anisotropy sensor is further explained using FIGS. 4a and 4b.

[0063] A plurality of conductive strips are arranged at an angle of 45 to 135 degrees with respect to the long axis direction of any one of the plurality of sensor parts, and the current path can be controlled according to the angle of arrangement.

[0064] The conductive strip is further explained using Fig. 5.

[0065] Each of the multiple sensor sections has shape anisotropy based on a ferromagnetic layer and an antiferromagnetic layer, forms an exchange bias through the interaction between the ferromagnetic layer and the antiferromagnetic layer, and the magnetization changes in response to an external magnetic field due to the anisotropic magnetoresistance (AMR) and planar Hall effect, and the magnetic field can be measured using the resistance that changes according to the changed magnetization.

[0066] Accordingly, the present invention can impart anisotropy in various directions through shape anisotropy based on a ferromagnetic layer and an antiferromagnetic layer, thereby providing a multi-axis magnetic field sensor device with reduced process time and improved productivity.

[0067] FIG. 2 illustrates a plan view of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0068] Referring to FIG. 2, a multi-axis magnetic field sensor device (200) according to one embodiment of the present invention includes a shape anisotropy sensor and a magnetic flux guide (220).

[0069] The shape anisotropy sensor includes a first measurement sensor (210), a second measurement sensor (211), a third measurement sensor (212), and a fourth measurement sensor (213).

[0070] The magnetic flux guide (220) is coupled to the shape anisotropy sensor.

[0071] That is, the magnetic flux guide (220) is formed on the first measuring sensor (210), the second measuring sensor (211), the third measuring sensor (212), and the fourth measuring sensor (213).

[0072] The first measurement sensor (210) and the second measurement sensor (211) are orthogonally arranged with respect to the third measurement sensor (212) and the fourth measurement sensor (213), and through a heat treatment process based on shape anisotropy, exchange biases of different directions are formed in directions orthogonally to each other between the sensor parts to detect a magnetic field in the x-axis direction.

[0073] Meanwhile, the third measurement sensor (212) and the fourth measurement sensor (213) can detect a magnetic field in the y-axis direction according to the exchange bias.

[0074] The first measurement sensor (210) and the second measurement sensor (211) detect a z-axis magnetic field induced from the outside through a magnetic flux guide (220) in the z-axis direction in the x-axis plane direction.

[0075] The third measurement sensor (212) and the fourth measurement sensor (213) can detect a z-axis magnetic field induced from the outside through the magnetic flux guide (220) in the z-axis direction in the y-axis plane direction.

[0076] The first measurement sensor (210) and the second measurement sensor (211) are applied a magnetic field in a direction opposite to the magnetic field in the z-axis direction in the x-axis plane direction.

[0077] The third measurement sensor (212) and the fourth measurement sensor (213) can receive a magnetic field in a direction opposite to the magnetic field in the z-axis direction in the y-axis plane direction.

[0078] An insulating film is deposited for electrical insulation between the shape anisotropy sensor and the magnetic flux guide (220).

[0079] The insulating layer is formed of SiO2 and Al2O3, provided that if the magnetic flux guide (220) is an insulator, the insulating film deposition process may be omitted.

[0080] The shape of the magnetic flux guide (220) is formed by deposition through a patterning process that defines the shape.

[0081] The material of the magnetic flux guide (220) may be a high-permeability metal, magnetic nanoparticles, etc., and the deposition method varies depending on the type of material.

[0082] The magnetic flux guide (220) guides the vertical (z-axis) magnetic field introduced from the outside into the xy plane direction, thereby enabling the measurement of the z-axis magnetic field using sensors that are originally only capable of detecting plane magnetic fields.

[0083] The z-axis magnetic field is measured using four sensors on a plane, and the detailed principle is described in the additional content section below.

[0084] This has the advantage of being able to extend the existing sensor structure without adding new sensors.

[0085] Therefore, by combining a magnetic flux guide with the x-axis and y-axis sensors, magnetic fields of the x-axis, y-axis, and z-axis can all be detected within a single sensor chip.

[0086] In summary, by placing two x-axis sensors and two y-axis sensors each and combining them with a magnetic flux guide, a separate sensor for vertical detection is not required.

[0087] Accordingly, the present invention can provide a multi-axis magnetic field sensor device capable of detecting an external magnetic field in multiple axes (x-axis, y-axis, and z-axis) with high sensitivity by utilizing the shape anisotropy of a magnetic material and a magnetic flux guide (MFG), and a method for manufacturing the same.

[0089] FIGS. 3A and 3B are drawings illustrating a sensor part in a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0090] FIG. 3a illustrates a first structure of a sensor part in a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention, and FIG. 3b illustrates a second structure of a sensor part in a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0091] Referring to FIG. 3a, in the shape anisotropy sensor of a multi-axis magnetic field sensor device according to one embodiment of the present invention, the sensor part (300) is composed of a substrate (301), a ferromagnetic layer (302), and an antiferromagnetic layer (303).

[0092] Referring to FIG. 3b, in the shape anisotropy sensor of a multi-axis magnetic field sensor device according to one embodiment of the present invention, the sensor part (310) is composed of a substrate (311), a ferromagnetic layer (312), and an antiferromagnetic layer (313).

[0093] A sensor portion having shape anisotropy can be deposited and formed on a substrate including an insulating layer.

[0094] For example, the substrate may include either Si or SiO2, and the shape may be realized using photolithography or etching techniques, etc.

[0095] For example, the ferromagnetic layer may contain NiFe, and the antiferromagnetic layer may contain IrMn.

[0096] In addition, a non-magnetic material may be located on top of a ferromagnetic layer or an antiferromagnetic layer, and may be formed with a deposition structure of Ta / NiFe / IrMn / Ta or Ta / IrMn / NiFe / Ta.

[0097] Ferromagnetic layers and antiferromagnetic layers can form an exchange bias through interaction.

[0098] In addition, in the case of a combination of a ferromagnetic layer and an antiferromagnetic layer where no exchange bias is formed at room temperature, an exchange bias may be formed during the heat treatment process.

[0099] The shape anisotropy sensor of a multi-axis magnetic field sensor device can measure a magnetic field by utilizing the fact that magnetization changes and resistance changes in response to an external magnetic field due to the anisotropic magnetoresistance effect and the planar Hall effect.

[0100] A multi-axis magnetic field sensor device according to one embodiment of the present invention has a simple thin-film structure compared to giant magnetoresistance (GMR) and tunneling magnetoresistance (MTJ) sensors as an AMR and PHMR sensor.

[0101] GMRs with a magnetic layer / non-magnetic layer / magnetic layer structure and TMRs with a magnetic layer / insulating tunneling layer / magnetic layer structure depend on the angle between the magnetization directions of the two ferromagnetic layers.

[0102] Giant magnetoresistance materials or tunneling magnetoresistance materials have a large magnetoresistance ratio, which offers a significant advantage in output signals compared to AMR, but they have the disadvantage of poor linearity.

[0103] In addition, compared to the sensor used in the present invention, it is composed of multiple layers, making the process difficult.

[0104] Meanwhile, compared to giant magnetoresistance (GMR) materials or tunneling magnetoresistance (TMR) materials, anisotropic magnetoresistance (AMR) materials have a smaller magnetoresistance ratio but excellent linearity of the output signal and resolution according to the magnetic field strength, making them advantageous for stable magnetic field measurement and application.

[0106] FIGS. 4a and 4b are drawings illustrating a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0107] FIG. 4a illustrates a first structure of a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention, and FIG. 4b illustrates a second structure of a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0108] Referring to FIG. 4a, the shape anisotropy sensor (400) of a multi-axis magnetic field sensor device according to one embodiment of the present invention includes a sensor part (401), a conductive strip (402), an output voltage measuring electrode (403), and a voltage applying electrode (404).

[0109] The shape anisotropy sensor (400) of a multi-axis magnetic field sensor device according to one embodiment of the present invention has a structure in which a sensor driving voltage is applied through voltage application electrodes (404) located on the upper and lower sides.

[0110] Referring to FIG. 4b, the shape anisotropy sensor (410) of a multi-axis magnetic field sensor device according to one embodiment of the present invention includes a sensor part (411), a conductive strip (412), an output voltage measuring electrode (413), and a voltage applying electrode (414).

[0111] The shape anisotropy sensor (410) of a multi-axis magnetic field sensor device according to one embodiment of the present invention has a structure in which a sensor driving voltage is applied through voltage application electrodes (414) located on the left and right sides.

[0112] The sensor part (401) and the sensor part (411) can be formed in a rectangular shape where the length is longer than the width.

[0113] The sensor measuring the X-axis and the sensor measuring the Y-axis are arranged perpendicular to each other, and the horizontal of the X-axis sensor is arranged parallel to the X-axis, and the horizontal of the Y-axis sensor is arranged parallel to the Y-axis.

[0114] The shape anisotropic sensor (40) and the shape anisotropic sensor (410) may have a Wheatstone bridge shape in which four or more rectangular patterns are connected to each other.

[0116] FIG. 5 is a diagram illustrating a conductive strip in a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0117] FIG. 5 illustrates a case where the angles of the conductive strips are arranged differently in the shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0118] Referring to FIG. 5, the first structure (500) arranges a plurality of conductive strips, such as a first conductive strip (502) and a second conductive strip (503), at a 45-degree angle in the sensor part (501).

[0119] The second structure (510) arranges a plurality of conductive strips, such as a first conductive strip (512) and a second conductive strip (513), at a 135-degree angle in the sensor part (511).

[0120] The mentioned angle is the standard angle of the barber pole structure and may be changed depending on the sensor's usage purpose and process.

[0121] The first structure (500) and the second structure (510) are formed in a Wheatstone bridge circuit, and each pattern is connected by an electrode, the electrode is made of a low-resistance material, and the electrode includes any one of Au, Al and Cu.

[0122] Conductive strips called barberpoles are located in each rectangular pattern.

[0123] The conductive strip has lower resistance than the sensor part, and the direction of the current can be controlled according to Ohm's law, where current flows to the place of lower resistance.

[0124] In heat treatment technology utilizing shape anisotropy, the pinning direction may deviate from the intended long axis direction due to minute defects and residual magnetization of the thin film during the process.

[0125] According to one embodiment of the present invention, in a multi-axis magnetic field sensor device, the placement angle of the conductive strip is fixed, and after heat treatment, the pinning direction is investigated, and the angle of the conductive strip is adjusted accordingly to correct the sensor signal.

[0126] If the deviation in the pinning direction due to residual magnetization can be predicted during process development, heat treatment can be performed by positioning the conductive strip at a preset angle.

[0127] This can correct the pinning direction caused by the conductive strip, reducing rework in the production process and increasing efficiency.

[0129] FIG. 6 is a diagram illustrating a shape annealing system for shape heat treatment of a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0130] FIG. 6 illustrates the structure of a shape annealing system for shape heat treatment of a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0131] Referring to FIG. 6, in one embodiment of the present invention, the shape annealing system (600) is composed of a three-axis coil (601), a base (602), a workpiece (303), and a heating device (304).

[0132] A multi-axis magnetic field sensor device according to one embodiment of the present invention is positioned on the workpiece (303).

[0133] Shape heat treatment is an annealing method that utilizes the shape anisotropy of the sensor to set the magnetization direction without an external magnetic field, and follows the following procedure.

[0134] First, the sensor is positioned at the workpiece (303) and placed inside a 3-axis coil (601) that has a heating device (304).

[0135] At this time, the sensor is precisely aligned with respect to the axis to which the magnetic field is applied.

[0136] Next, the magnetic field applied to the sensor is adjusted to zero by removing the environmental offset through zero field calibration.

[0137] Next, an annealing field is applied between the two sensors to specify an anisotropic orientation for the sensors.

[0138] For example, when the angle between each sensor measuring the x-axis and y-axis magnetic fields is 90 degrees, the applied angle of the annealing field can be 45 degrees.

[0139] Next, the temperature of the sensor is raised using a heating device.

[0140] The heating device (304) must have no magnetic field generated by the device or very small magnetic field to prevent unintended magnetic field from being applied to the sensor.

[0141] The annealing temperature is heated above the blocking temperature, which is the temperature that removes (makes zero) the exchange bias of the deposited material.

[0142] Next, to stop applying the annealing field, the magnetic field strength applied to the sensor is set to 0 just before stopping heating after a certain period of time.

[0143] In this process, the material magnetized by the annealing field in a direction offset from the long axis of the sensor becomes magnetized in the long axis direction.

[0144] This is because the magnetization direction is induced toward the long axis to minimize shape anisotropy energy.

[0145] Next, the heating device (304) stops heating.

[0146] Next, the sensor is cooled to room temperature. This can be done in various ways, such as natural cooling or artificial cooling using cooling water.

[0147] Through the above procedure, the sensor measuring the x-axis and y-axis magnetic fields each forms a perpendicular exchange bias in the direction of the sensor's major axis.

[0148] Shape heat treatment can achieve multi-axial anisotropy in a single process, eliminating the need for separate heat treatment for each axis as in conventional methods.

[0149] By designing the shape of the magnetic thin film, anisotropy in various directions can be imparted to the sensor, contributing to reduced process time and improved productivity.

[0150] This allows for the efficient fabrication of multi-axis magnetic sensors capable of detecting and measuring magnetic fields from multiple directions.

[0151] A heat treatment process utilizing shape anisotropy can minimize defects that may occur in thin films compared to methods involving multiple process steps.

[0152] Undergoing multiple processing steps can apply stress to the thin film or introduce impurities, which can degrade its physical properties and reduce performance.

[0153] In shape heat treatment, since anisotropy is formed in a single process, the process is simplified, and the possibility of defects is significantly reduced.

[0154] In addition, reducing defects increases production yield and enables the maintenance of consistent quality, thereby improving product reliability and stability.

[0155] A coil through which an electric current flows is generally used to create a magnetic field.

[0156] The disadvantages of the coil-based method include heat generation due to the current, high power consumption, and difficulties in installation and relocation due to the size and weight of the coil.

[0157] However, since only a small current is required in the coil when generating a very small magnetic field, heat generation and power consumption are low, and a uniform magnetic field can be applied over a wide area, reducing the cost of constructing and operating the heat treatment process system.

[0159] FIG. 7 is a diagram illustrating the energy potential according to the magnetization angle of the sensor part in a shape anisotropic sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0160] FIG. 7 illustrates the simulation results for the energy potential according to the magnetization angle of the sensor part in the shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0161] Referring to Fig. 7, the graph (700) shows the external magnetic field (Ha) strength in the lower left corner, and the circular dot indicates the most stable, low-energy magnetization angle, and the magnetization of the sensor part has that angle.

[0162] Above the blocking temperature, the exchange bias strength converges to "0", and accordingly, the magnetization direction of the ferromagnetic layer is determined by the external magnetic field energy and shape anisotropy energy.

[0163] It shows the energy potential according to the magnetization angle when considering only Zeeman energy and shape anisotropy energy.

[0164] When the annealing magnetic field is applied at 45 degrees and the external magnetic field is sufficiently strong, the magnetization is directed toward the lowest energy angle, which is close to the direction of the annealing magnetic field (45 degrees).

[0165] As the external magnetic field weakens, the magnetization angle gradually shifts toward the long axis direction (0 degrees) of the thin film, and at an external magnetic field strength of 0 Oe, it becomes magnetized to 0 degrees in the long axis direction.

[0166] When the thin film is cooled in this state, an exchange bias is formed along the magnetization direction. Shape heat treatment operates based on this principle.

[0168] FIGS. 8a to 8c are drawings illustrating a multi-axis magnetic field sensing mechanism of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0169] FIG. 8a shows a sensing mechanism for a magnetic field in the x-axis direction in relation to a multi-axis magnetic field sensing mechanism of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0170] Referring to FIG. 8a, the sensing mechanism structure (800) has a first measuring sensor and a second measuring sensor that detect a magnetic field in the x-axis direction.

[0171] FIG. 8b shows a sensing mechanism for a magnetic field in the y-axis direction in relation to a multi-axis magnetic field sensing mechanism of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0172] Referring to FIG. 8b, the sensing mechanism structure (810) detects a magnetic field in the y-axis direction using a third measurement sensor and a fourth measurement sensor.

[0173] FIG. 8c shows a sensing mechanism for a magnetic field in the z-axis direction in relation to a multi-axis magnetic field sensing mechanism of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0174] Referring to FIG. 8c, the sensing mechanism structure (820) has a first measuring sensor and a second measuring sensor that detect a magnetic field in the z-axis direction.

[0175] The first measurement sensor and the second measurement sensor receive magnetic fields in opposite directions with respect to the z-direction magnetic field.

[0176] The third measurement sensor and the fourth measurement sensor receive magnetic fields in directions opposite to each other with respect to the z-direction magnetic field.

[0177] Accordingly, the strength of the x-axis magnetic field calculated from the first measurement sensor and the second measurement sensor measuring the x-direction magnetic field can be defined as shown in Equation 1 below.

[0179] [Mathematical Formula 1]

[0180]

[0181] H in mathematical formula 1 x represents the strength of the magnetic field in the x-direction, and H Sx1 represents the strength of the magnetic field in the x-direction measured by the first measurement sensor, and H Sx2 represents the strength of the magnetic field in the x direction measured by the second measurement sensor, and α can represent the magnetic field conversion rate of the magnetic flux guide in the x-axis direction.

[0182] The strength of the y-axis magnetic field calculated from the third and fourth measurement sensors measuring the y-direction magnetic field can be defined as shown in Equation 2 below.

[0184] [Mathematical Formula 2]

[0185]

[0186] H in mathematical equation 2 y represents the strength of the magnetic field in the y-direction, and H Sy3 represents the strength of the magnetic field in the y-direction measured by the third measurement sensor, and H Sy4 represents the strength of the magnetic field in the y-direction measured by the fourth measurement sensor, and β can represent the magnetic field conversion rate of the magnetic flux guide in the y-axis direction.

[0187] The strength of the z-axis magnetic field calculated from the first and second measuring sensors or the third and fourth measuring sensors measuring the z-direction magnetic field can be defined as Equation 3 below.

[0189] [Mathematical Formula 3]

[0190]

[0191] H in mathematical equation 3 z represents the strength of the magnetic field in the z-direction, and H Sz1 represents the strength of the magnetic field in the z-direction measured by the first measurement sensor, and H Sz2 represents the strength of the magnetic field in the z-direction measured by the second measurement sensor, and H Sz3represents the strength of the magnetic field in the z-direction measured by the third measurement sensor, and H Sz4 represents the strength of the magnetic field in the z-direction measured by the fourth measurement sensor, and γ can represent the magnetic field conversion rate of the magnetic flux guide in the z-axis direction.

[0193] FIG. 9 is a drawing illustrating an optical image of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0194] FIG. 9 illustrates an optical image of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0195] Referring to FIG. 9, the optical image (900) represents the x-axis measurement sensor (901) and the y-axis measurement sensor (902), and represents the enlarged image (910).

[0196] In the enlarged image (910), it can be seen that the conductive strips are arranged at regular intervals and angles.

[0198] FIGS. 10a and FIGS. 10b are drawings illustrating the output signal of a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0199] FIG. 10a shows the simulation results for the output signal of a 20 μm wide sensor in relation to the output signal of a shape anisotropy sensor of a multi-axis magnetic field sensor device according to one embodiment of the present invention.

[0200] FIG. 10b shows the simulation results for the output signal of a 40 μm wide sensor in relation to the output signal of a shape anisotropy sensor of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0201] Referring to FIG. 10a, graph (1000) shows the simulation result for the output signal of a sensor with a width of 20 μm.

[0202] Referring to FIG. 10b, graph (1010) shows the simulation results for the output signal of a sensor with a width of 40 μm.

[0203] During annealing, a magnetic field of a specific strength (2, 6, 10 Oe) was applied, and the applied magnetic field was readjusted to 0 Oe before stopping heating.

[0204] According to graphs (1000) and (1010), the output signal of the sensor shows linearity near an external magnetic field strength of 0 Oe.

[0205] In graph (1000), when a voltage of 1V is applied, the average peak-to-peak voltage (V p-p ) indicates 7.0mV at a 20μm wide sensor.

[0206] Graph (1010) shows that the 40 μm wide sensor is 7.9 mV, and the average sensitivity at this time is 91 μV / Oe and 111 μV / Oe, respectively.

[0208] FIG. 11 is a diagram illustrating the response characteristics of the x-axis and y-axis of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0209] FIG. 11 illustrates simulation results related to the response characteristics of the x-axis and y-axis of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0210] Referring to FIG. 11, the graph (1100) shows the output voltage of the 2-axis sensor measured in the x-axis direction and the y-axis direction.

[0211] It shows the axial magnetic field response characteristics of x-axis and y-axis sensors simultaneously annealed on the same substrate.

[0212] The two sensors exhibited similar response characteristics in terms of dynamic range and sensitivity.

[0213] Both axes showed consistent changes in response to the applied magnetic field, and stable and directional operating characteristics were confirmed.

[0214] These results mean that each sensor reliably detects the magnetic field component in the corresponding direction.

[0216] FIG. 12 is a diagram illustrating the measurement of noise spectrum density (NSD) of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0217] FIG. 12 illustrates simulation results related to the measurement of noise spectrum density (NSD) of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0218] Referring to FIG. 12, the graph (1200) shows the results of measuring the noise spectral density of the sensor using an Agilent 35670A spectrum analyzer and a Gaussian chamber.

[0219] During measurement, a constant voltage of 1v was applied to the sensor, and the graph (1200) shows the nsd of the dual-axis sensor having widths of 20 μm and 40 μm, respectively.

[0220] The distinct peak observed at 60 Hz is due to power supply noise.

[0221] All sensors exhibited typical 1 / f noise characteristics in the low-frequency region, and as the frequency increased, the voltage spectral density decreased and then converged to a constant level at high frequencies.

[0222] The broadband noise level is at the 20μm sensor. , at the 40μm sensor It was measured as.

[0223] Similar noise levels between the x-axis and y-axis sensors demonstrate that the performance of sensors fabricated by shape annealing is consistent.

[0225] FIGS. 13a and FIGS. 13b are drawings illustrating the magnetic field sensing capability of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0226] FIG. 13a illustrates a voltage response to an external magnetic field (Hex) application angle in relation to the magnetic field sensing capability of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0227] Referring to Fig. 13a, the x-axis sensor is shown at the top of the graph (1300), and the y-axis sensor is shown at the bottom.

[0228] To evaluate the magnetic field sensing performance of the dual-axis sensor, a magnetic field is applied while changing the angle within the xy plane.

[0229] The graph (1300) shows the output signals of the x-axis and y-axis sensors according to the angle of application of the external magnetic field.

[0230] By using dual-axis coils, the rotation angle was precisely controlled while maintaining a constant magnetic field strength, thereby verifying the ability of each sensor to detect the direction of the magnetic field.

[0231] As the magnetic field rotated, the output voltage changed periodically according to the angle, and when the length direction of the device coincided with the magnetic field, it showed an output of 0 Oe, and when it was perpendicular, it showed maximum and minimum voltages.

[0232] The x-axis and y-axis sensors showed a phase difference of 90 degrees corresponding to the theoretical cosine and sine waveforms (solid lines), respectively.

[0233] This was consistent with the theoretical operating characteristics of the sensor. It also shows that the peak-to-peak output voltage increases linearly in proportion to the applied magnetic field strength.

[0234] FIG. 13b illustrates a measured magnetic field angle with respect to an external magnetic field application angle in relation to the magnetic field sensing capability of a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0235] Referring to FIG. 13b, the graph (1310) illustrates the measured magnetic field angle for the external magnetic field application angle.

[0236] The magnetic field vector components were calculated based on the voltage measured by the x-axis and y-axis sensors to estimate the direction of the magnetic field within the plane.

[0237] When two sensors have the same sensitivity (i.e., the same peak-to-peak voltage change rate), the magnetic field angle can be calculated through the following equation and can be rearranged as shown in Equation 4 below.

[0239] [Mathematical Formula 4]

[0240]

[0242] In mathematical equation 4, arctan represents the magnetic field angle, Vx represents the magnetic field along the x-axis, and Vy represents the magnetic field along the y-axis.

[0243] The calculated angle tends to match the applied magnetic field angle, which demonstrates that the dual-axis sensor fabricated through the shape annealing process can accurately detect the direction of the magnetic field within the plane.

[0244] Accordingly, the present invention can simultaneously realize process simplification, ease of sensor alignment, and 3-axis magnetic field sensing, and can provide a multi-axis magnetic field sensor device and a method for manufacturing the same that are advantageously applicable to mobile, vehicle, and medical sensor systems requiring high integration and miniaturization.

[0246] FIG. 14 is a drawing illustrating a method for manufacturing a multi-axis magnetic field sensor device according to an embodiment of the present invention.

[0247] FIG. 14 illustrates a method for manufacturing a multi-axis magnetic field sensor device according to an embodiment of the present invention, and a procedure for manufacturing a multi-axis magnetic field sensor device.

[0248] Referring to FIG. 14, in step (S1401), a method for manufacturing a multi-axis magnetic field sensor device according to an embodiment of the present invention generates a shape anisotropic sensor.

[0249] That is, a method for manufacturing a multi-axis magnetic field sensor device according to an embodiment of the present invention comprises forming a plurality of sensor parts, wherein a ferromagnetic layer is formed on a substrate for each of a first measurement sensor, a second measurement sensor, a third measurement sensor, and a fourth measurement sensor, and an antiferromagnetic layer is formed on the ferromagnetic layer or an antiferromagnetic layer is formed and a ferromagnetic layer is formed on the antiferromagnetic layer, and a conductive strip having a barbverpole structure is arranged at a predetermined angle on each of the plurality of sensor parts, and electrodes are formed on both sides of each of the plurality of sensor parts to create a shape anisotropy sensor.

[0250] In step (S1402), the method for manufacturing a multi-axis magnetic field sensor device according to an embodiment of the present invention arranges shape anisotropic sensors.

[0251] That is, a method for manufacturing a multi-axis magnetic field sensor device according to one embodiment of the present invention arranges the horizontal axes of a first measurement sensor and a second measurement sensor parallel to the x-axis direction, arranges the horizontal axes of a third measurement sensor and a fourth measurement sensor parallel to the y-axis direction, and performs shape heat treatment on the shape anisotropy sensor.

[0252] In step (S1403), the method for manufacturing a multi-axis magnetic field sensor device according to an embodiment of the present invention combines a magnetic flux on top of a shape anisotropic sensor.

[0253] That is, a method for manufacturing a multi-axis magnetic field sensor device according to one embodiment of the present invention places a magnetic flux guide made of a high permeability material on top of a shape anisotropic sensor to guide a magnetic field in the z-axis direction applied from the outside into the xy plane direction and combines a magnetic flux on top of the shape anisotropic sensor so as to detect even the z-axis component.

[0254] Accordingly, the present invention can improve the reliability and stability of a multi-axis magnetic field sensor device by reducing the possibility of defects occurring during the thin film formation process and maintaining production yield by processing the heat treatment process for shape anisotropy based on a ferromagnetic layer and an antiferromagnetic layer as a single process.

[0256] Although the embodiments have been described above with reference to the limited drawings, those skilled in the art can make various modifications and variations from the description above. For example, suitable results can be achieved even if the described techniques are performed in a different order than described, and / or the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents.

[0257] Therefore, other implementations, other embodiments, and equivalents to the claims also fall within the scope of the claims set forth below. Explanation of the symbols

[0258] 100: Multi-axis magnetic field sensor device 110: 1st measuring sensor 111: 2nd measuring sensor 112: Third measurement sensor 113: Fourth measurement sensor 120: Magnetic Flux Guide

Claims

Claim 1 A multi-axis magnetic field sensor device comprising: a shape anisotropy sensor including a first measurement sensor, a second measurement sensor, a third measurement sensor, and a fourth measurement sensor; and a magnetic flux guide coupled to the shape anisotropy sensor, wherein the first measurement sensor and the second measurement sensor detect a magnetic field in the x-axis direction, the third measurement sensor and the fourth measurement sensor detect a magnetic field in the y-axis direction, the magnetic flux guide induces a magnetic field in the z-axis direction in the x and y-axis plane directions of the shape anisotropy sensor, and the first measurement sensor, the second measurement sensor, the third measurement sensor, and the fourth measurement sensor detect the induced magnetic field in the z-axis direction, and wherein the shape anisotropy sensor includes a plurality of sensor parts including a ferromagnetic layer and an antiferromagnetic layer on a substrate, and wherein the plurality of sensor parts form an exchange bias in the long-axis direction through a shape heat treatment in which magnetization returns in the long-axis direction due to shape anisotropy after being heated above a blocking temperature and the magnetic field is removed. Claim 2 A multi-axis magnetic field sensor device according to claim 1, wherein the shape anisotropy sensor comprises: a plurality of conductive strips arranged at a preset angle and a barbverpole structure in each of the plurality of sensor parts; and electrodes formed on both sides of each of the plurality of sensor parts. Claim 3 A multi-axis magnetic field sensor device according to claim 2, wherein the plurality of conductive strips are arranged at an angle of 45 to 135 degrees with respect to the long axis direction of any one of the plurality of sensor parts, and the current path is controlled according to the arranged angle. Claim 4 A multi-axis magnetic field sensor device according to claim 2, wherein each of the plurality of sensor parts has shape anisotropy based on the ferromagnetic layer and the antiferromagnetic layer, forms an exchange bias through the interaction between the ferromagnetic layer and the antiferromagnetic layer, and the magnetization changes with respect to an external magnetic field due to anisotropic magnetoresistance (AMR) and planar Hall effect, and measures the magnetic field using the resistance that changes according to the changed magnetization. Claim 5 A multi-axis magnetic field sensor device according to claim 1, wherein the first measurement sensor and the second measurement sensor are orthogonally arranged with respect to the third measurement sensor and the fourth measurement sensor, and through a heat treatment process based on shape anisotropy, exchange biases of different directions are formed in directions orthogonally to each other between the sensor parts to detect the magnetic field in the x-axis direction, and the third measurement sensor and the fourth measurement sensor detect the magnetic field in the y-axis direction according to the exchange bias. Claim 6 A multi-axis magnetic field sensor device according to claim 4, wherein the first measuring sensor and the second measuring sensor detect the z-axis magnetic field induced from the outside through the magnetic flux guide in the z-axis direction in the x-axis plane direction, and the third measuring sensor and the fourth measuring sensor detect the z-axis magnetic field induced from the outside through the magnetic flux guide in the y-axis plane direction. Claim 7 A multi-axis magnetic field sensor device according to claim 4, wherein the first measuring sensor and the second measuring sensor receive a magnetic field in a direction opposite to the z-axis direction magnetic field in the x-axis plane direction, and the third measuring sensor and the fourth measuring sensor receive a magnetic field in a direction opposite to the z-axis direction magnetic field in the y-axis plane direction. Claim 8 A multi-axis magnetic field sensor device according to claim 4, wherein the strength of the magnetic field in the x-axis direction is measured by combining the strengths of the magnetic fields measured by each of the first measuring sensor and the second measuring sensor, and calculating the ratio of the combined rate of change of the magnetic field of the magnetic flux guide in the x-axis direction to the number of measuring sensors for the combined strength, the strength of the magnetic field in the y-axis direction is measured by combining the strengths of the magnetic fields measured by each of the third measuring sensor and the fourth measuring sensor, and calculating the ratio of the combined rate of change of the magnetic field of the magnetic flux guide in the y-axis direction to the number of measuring sensors for the combined strength, and the strength of the magnetic field in the z-axis direction is measured by combining the strengths of the magnetic fields measured by each of the first measuring sensor and the second measuring sensor or the third measuring sensor and the fourth measuring sensor, and calculating the ratio of the combined rate of change of the magnetic field of the magnetic flux guide in the z-axis direction to the number of measuring sensors for the combined strength. Claim 9 A method for manufacturing a multi-axis magnetic field sensor device comprising a shape anisotropic sensor including a first measuring sensor, a second measuring sensor, a third measuring sensor, and a fourth measuring sensor, and a magnetic flux guide coupled to the shape anisotropic sensor, the method comprising: generating the shape anisotropic sensor; arranging the horizontal axes of the first measuring sensor and the second measuring sensor so as to be parallel to the x-axis direction; arranging the horizontal axes of the third measuring sensor and the fourth measuring sensor so as to be parallel to the y-axis direction; and performing a shape heat treatment on the shape anisotropic sensor. A method for manufacturing a multi-axis magnetic field sensor device, comprising the step of coupling the magnetic flux guide to the upper portion of the shape anisotropic sensor, wherein the step of creating the shape anisotropic sensor comprises forming a ferromagnetic layer on a substrate for each of the first measuring sensor, the second measuring sensor, the third measuring sensor, and the fourth measuring sensor, forming an antiferromagnetic layer on the ferromagnetic layer or forming the antiferromagnetic layer, and forming a plurality of sensor portions in which the ferromagnetic layer is formed on the antiferromagnetic layer, and the ferromagnetic layer is formed on the antiferromagnetic layer, wherein the shape anisotropic sensor is characterized by forming an exchange bias in the long axis direction through a shape heat treatment in which magnetization returns in the long axis direction due to shape anisotropy after the magnetic field is removed following heating of the plurality of sensor portions above a blocking temperature. Claim 10 A method for manufacturing a multi-axis magnetic field sensor device according to claim 9, wherein the step of generating the shape anisotropic sensor comprises: a step of arranging a conductive strip having a barbverpole structure at a predetermined angle in each of the plurality of sensor parts; and a step of forming electrodes on both sides of each of the plurality of sensor parts. Claim 11 A method for manufacturing a multi-axis magnetic field sensor device according to claim 10, wherein the plurality of conductive strips are arranged at an angle of 45 to 135 degrees with respect to the long axis direction of any one of the plurality of sensor parts, and the current path is controlled according to the arranged angle. Claim 12 A method for manufacturing a multi-axis magnetic field sensor device according to claim 10, wherein each of the plurality of sensor parts has shape anisotropy based on the ferromagnetic layer and the antiferromagnetic layer, forms an exchange bias through the interaction between the ferromagnetic layer and the antiferromagnetic layer, and the magnetization changes with respect to an external magnetic field due to anisotropic magnetoresistance (AMR) and planar Hall effect, and measures the magnetic field using the resistance that changes according to the changed magnetization. Claim 13 A method for manufacturing a multi-axis magnetic field sensor device according to claim 9, wherein the first measuring sensor and the second measuring sensor detect a magnetic field in the x-axis direction, the third measuring sensor and the fourth measuring sensor detect a magnetic field in the y-axis direction, the magnetic flux guide induces a magnetic field in the z-axis direction in the x and y-axis plane directions of the shape anisotropy sensor, and the first measuring sensor, the second measuring sensor, the third measuring sensor, and the fourth measuring sensor detect the induced magnetic field in the z-axis direction. Claim 14 A method for manufacturing a multi-axis magnetic field sensor device according to claim 13, wherein the first measurement sensor and the second measurement sensor are orthogonally arranged with respect to the third measurement sensor and the fourth measurement sensor, and through a heat treatment process based on shape anisotropy, exchange biases of different directions are formed in directions orthogonally to each other between the sensor parts to detect the magnetic field in the x-axis direction, and the third measurement sensor and the fourth measurement sensor detect the magnetic field in the y-axis direction according to the exchange bias, and the first measurement sensor and the second measurement sensor detect the magnetic field in the z-axis direction induced from the outside through the magnetic flux guide in the x-axis plane direction, and the third measurement sensor and the fourth measurement sensor detect the magnetic field in the z-axis direction induced from the outside through the magnetic flux guide in the y-axis plane direction.

Citation Information

Patent Citations

  • Magnetoresistive sensor for angle or position determination

    JP2006519370A

  • Multiaxial magnetoresistance sensor annealing system, multiaxial magnetoresistance sensor, and manufacturing method of multiaxial magnetoresistance sensor

    KR102791525B1