Semiconductor processing system using axis conversion of laser beam

Abstract

A semiconductor processing system is disclosed that prevents damage to a semiconductor chip by processing the processing surface of a wafer into a round shape. A semiconductor processing system according to one embodiment of the disclosed invention includes: a first path changing unit in which a first laser beam is incident, the first laser beam is branched into a first branch laser beam and a second branch laser beam, and the paths of the first branch laser beam and the second branch laser beam are controlled; a slit optical unit in which the first branch laser beam and the second branch laser beam are incident, and the sizes of the cross-sections of the first branch laser beam and the second branch laser beam are controlled; and a first focusing unit that gathers the first branch laser beam and the second branch laser beam that have passed through the slit optical unit into a first focus to form a first integrated beam and incidents the first integrated beam onto a wafer.

Description

Technology Field

[0001] The present invention relates to a semiconductor processing system used for wafer ablation using a laser beam axis conversion. More specifically, it relates to a semiconductor processing system capable of forming a processing surface having a round shape by branching the laser beam or controlling the movement path of the laser beam. Background Technology

[0002] In conventional wafer processing, it was common practice to form the processing surface by irradiating a laser beam perpendicularly to the wafer surface. However, because this vertical cutting method results in a processing surface that is nearly perpendicular, it caused a problem where stress concentrated at the chip edges, leading to chip breakage, when forming products such as HBMs that stack semiconductors.

[0003] To address this issue, some technologies have proposed methods to smooth the cut surface by adjusting the laser output or wavelength or using a multi-focus approach; however, since the beam's angle of incidence remains close to perpendicular, the cut surface at the chip edge is nearly right-angled. Consequently, these methods fail to resolve the problem of stress concentration at the chip edge, which leads to chip failure.

[0004] Accordingly, there is a need for an invention to resolve the stress concentration phenomenon at the edges of the chip. The problem to be solved

[0005] The problem that the present invention aims to solve is to provide a semiconductor processing system that prevents damage to a semiconductor chip by processing the processing surface of a wafer into a round shape.

[0006] Another problem that the present invention aims to solve is to provide a semiconductor processing system capable of cutting simultaneously on multiple axes.

[0007] Another problem that the present invention aims to solve is to reduce the time required for the wafer processing process.

[0008] Meanwhile, the technical problems to be solved by the present invention are not limited to those mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art to which the present invention belongs from the description below. means of solving the problem

[0009] A semiconductor processing system according to one aspect of the present invention for achieving the above objective comprises: a first path changing unit in which a first laser beam is incident, the first laser beam is branched into a first branch laser beam and a second branch laser beam, and the paths of the first branch laser beam and the second branch laser beam are controlled; a slit optical unit in which the first branch laser beam and the second branch laser beam are incident, and the size of the cross-section of the first branch laser beam and the cross-section of the second branch laser beam are controlled; and a first focusing unit in which the first branch laser beam and the second branch laser beam that have passed through the slit optical unit are gathered at a first focus to form a first integrated beam, and the first integrated beam is incident on a wafer.

[0010] In addition, the first integrated beam is controlled by at least one of the first path changing unit, the slit optical unit, and the first focal unit so that it is incident diagonally on the wafer on the support member, and the cutting surface of the wafer is formed in a round shape.

[0011] In addition, the first integrated beam further includes an observation unit that monitors the pattern of the first reflected beam reflected from the wafer.

[0012] Additionally, the observation unit transmits first information including the pattern of the first reflected beam to at least one of the first path changing unit, the slit optical unit, and the first focal unit.

[0013] Additionally, based on the first information, at least one of the first path changing unit, the slit optical unit, and the first focal unit corrects at least one of the alignment of the first integrated beam, the focus of the first integrated beam, and the incident angle of the first integrated beam.

[0014] Additionally, it further includes a second path changing unit to which a second laser beam is incident and capable of adjusting the path of the second laser beam, an AOD optical unit to which the second laser beam is incident and which adjusts at least one of the amplitude and frequency of the second laser beam, and a second focusing unit that gathers the second laser beam that has passed through the AOD optical unit to a second focus to form a second integrated beam and incidents the second integrated beam onto the wafer.

[0015] In addition, the second integrated beam is controlled by at least one of the second path changing unit, the AOD optical unit, and the second focusing unit so that it is incident diagonally on the wafer on the support member, and the cutting surface of the wafer is formed in a round shape.

[0016] Additionally, it further includes an observation unit that monitors the pattern of the first reflected beam reflected from the wafer by the first integrated beam and the pattern of the second reflected beam reflected from the wafer by the second integrated beam.

[0017] Additionally, the observation unit transmits first information including the pattern of the first reflected beam to at least one of the first path changing unit, the slit optical unit, and the first focal unit, or transmits second information including the pattern of the second reflected beam to at least one of the second path changing unit, the AOD optical unit, and the second focal unit.

[0018] Additionally, based on the first information, at least one of the first path changing unit, the slit optical unit, and the first focal unit corrects at least one of the alignment of the first integrated beam, the focus of the first integrated beam, and the incident angle of the first integrated beam, and based on the second information, at least one of the second path changing unit, the AOD optical unit, and the second focal unit corrects at least one of the alignment of the second integrated beam, the focus of the second integrated beam, and the incident angle of the second integrated beam.

[0019] A semiconductor processing system according to another aspect of the present invention for achieving the above objective comprises: a first path changing unit to which a first laser beam is incident and capable of controlling the path of the first laser beam; a slit optical unit to which the first laser beam is incident and capable of controlling the size of the cross-section of the first laser beam; a second path changing unit to which a second laser beam is incident and capable of controlling the path of the second laser beam; an AOD optical unit to which the second laser beam is incident and capable of controlling at least one of the amplitude and frequency of the second laser beam; and a focusing unit that collects the first laser beam and the second laser beam that have passed through the slit optical unit into a focusing focus to form an integrated beam and incidents the integrated beam onto a wafer.

[0020] In addition, the integrated beam is controlled by at least one of the first path changing unit, the slit optical unit, the focusing focal unit, the second path changing unit, and the AOD optical unit so that it is incident diagonally on the wafer on the support member, and the cutting surface of the wafer is formed in a round shape.

[0021] In addition, the integrated beam further includes an observation unit that monitors the pattern of the reflected beam reflected from the wafer.

[0022] Additionally, the observation unit transmits third information including the pattern of the reflected beam to at least one of the first path changing unit, the slit optical unit, the focusing focal unit, the second path changing unit, and the AOD optical unit.

[0023] In addition, based on the third information, at least one of the first path changing unit, the slit optical unit, the focusing focal unit, the second path changing unit, and the AOD optical unit corrects at least one of the alignment of the integrated beam, the focus of the integrated beam, and the incident angle of the integrated beam. Effects of the invention

[0024] The present invention can provide a semiconductor processing system that prevents damage to a semiconductor chip by processing the processing surface of a wafer into a round shape.

[0025] In addition, the present invention can provide a semiconductor processing system capable of cutting simultaneously on multiple axes.

[0026] In addition, the present invention can reduce the time required for the wafer processing process.

[0027] Meanwhile, the effects obtainable from the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art to which the present invention belongs from the description below. Brief explanation of the drawing

[0028] FIG. 1 is a diagram illustrating a configuration for controlling the path of a laser beam in a semiconductor processing system according to some embodiments of the present invention. FIG. 2 is a drawing for explaining a semiconductor processing device to which a semiconductor processing system according to some embodiments of the present invention is applied. FIG. 3 is a diagram illustrating a configuration for controlling the path of a laser beam in a semiconductor processing system according to some embodiments of the present invention. FIG. 4 is a drawing for explaining a semiconductor processing device to which a semiconductor processing system according to some embodiments of the present invention is applied. FIG. 5 is a diagram illustrating a configuration for controlling the path of a laser beam in a semiconductor processing system according to some embodiments of the present invention. Specific details for implementing the invention

[0029] Hereinafter, exemplary embodiments according to the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by the exemplary embodiments. Unless otherwise defined, all terms used in this specification (including technical and scientific terms) shall be used in a meaning that is commonly understood by those skilled in the art to which this disclosure belongs, but this may vary depending on the intent of those skilled in the art, case law, the emergence of new technology, etc.

[0030] Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms have been selected at the applicant's discretion, and in such cases, their meanings will be described in detail in the relevant explanatory sections. Accordingly, terms used in this disclosure should be defined not merely by their names, but based on their meanings and the content throughout this disclosure.

[0031] Throughout this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Furthermore, the singular form used in this specification includes the plural form unless specifically stated otherwise. Additionally, the expression "at least one of a, b, and / or c" as used throughout this specification may encompass 'a alone', 'b alone', 'c alone', 'a and b', 'a and c', 'b and c', or 'a, b, and c all'.

[0032] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but they are used solely for the purpose of distinguishing one component from another and are not intended to limit the scope to the components referred to by such terms. For example, without departing from the scope of the present invention, the first component may be named the second component, and the second component may also be named the first component.

[0033] Additionally, terms such as “…part,” “…module,” etc., as described in this specification refer to a unit that processes at least one function or operation, which may be implemented in hardware or software, or a combination of hardware and software. Furthermore, embodiments of this disclosure may be represented in this specification by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware and / or software configurations that execute specific functions. For example, embodiments of this disclosure may employ direct circuit configurations such as memory, processing, logic, look-up tables, etc., which can execute various functions under the control of one or more microprocessors or other control devices.

[0034] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In describing the embodiments, technical details that are well known in the art to which the present invention pertains and are not directly related to the present invention will be omitted. This is to ensure that the essence of the present invention is conveyed more clearly without obscuring it by omitting unnecessary descriptions. For the same reason, some components in the accompanying drawings may be exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect its actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0035] FIG. 1 is a diagram illustrating a configuration for controlling the path of a laser beam in a semiconductor processing system according to some embodiments of the present invention.

[0036] Referring to FIG. 1, a semiconductor processing system (100) according to some embodiments of the present invention may include a first path changing unit (111), a slit optical unit (120), a first focusing unit (151), and an observation unit (140).

[0037] A first laser beam (L1) can be incident on the first path changing unit (111). The first laser beam (L1) incident on the first path changing unit (111) can be branched into a first branched laser beam (SL1) and a second branched laser beam (SL2). In other words, the first path changing unit (111) can branch the first laser beam (L1) incident on the first path changing unit (111) into a first branched laser beam (SL1) and a second branched laser beam (SL2).

[0038] The branching angle and branching direction of each of the first branched laser beam (SL1) and the second branched laser beam (SL2) can be precisely controlled by the first path changing unit (111). Accordingly, the first integrated beam (AL1) can be controlled to be accurately incident on the target area. In other words, the first path changing unit (111) can adjust the paths of the first branched laser beam (SL1) and the second branched laser beam (SL2).

[0039] In some embodiments, the first path changing unit (111) can control the movement paths of the first branched laser beam (SL1) and the second branched laser beam (SL2) respectively through a reflection mirror. By adjusting the angle formed between the first branched laser beam (SL1) or the second branched laser beam (SL2) and the reflection mirror, the movement path of the first branched laser beam (SL1) or the second branched laser beam (SL2) reflected from the reflection mirror can be controlled. In other words, the movement paths of the first branched laser beam (SL1) and the second branched laser beam (SL2) respectively can be controlled according to the degree of tilting of the reflection mirror.

[0040] For example, the reflective mirror may be coated with a metal or dielectric material. The reflective mirror can be designed to have a high reflectivity through the metal or dielectric coating. Additionally, by coating multiple layers to form a multilayer reflective film on the reflective mirror, the reflection efficiency can be optimized for a specific wavelength.

[0041] For example, a reflective mirror can control polarization. Since the reflectivity can vary depending on the polarization state of the laser beam, the intensity of the laser beam can be controlled by adjusting the polarization angle of the reflective mirror.

[0042] The reflective mirror of the first path changing unit (111) can control the first integrated beam (AL1) to deviate from an axis perpendicular to the wafer, thereby controlling the first integrated beam (AL1) to be incident on the wafer at an oblique direction. The reflective mirror can precisely adjust the relative direction of the first branched laser beam (SL1) and the second branched laser beam (SL2), so that the first branched laser beam (SL1) and the second branched laser beam (SL2) can be controlled to be accurately incident on the slit optical unit (120). In addition, the reflective mirror of the first path changing unit (111) can control the angle formed by each of the first branched laser beam (SL1) and the second branched laser beam (SL2) with the slit optical unit (120), so that it can contribute to forming a round-shaped cutting surface when cutting the wafer.

[0043] In some embodiments, the first path changing unit (111) can split the first laser beam (L1) into the first branched laser beam (SL1) and the second branched laser beam (SL2), respectively, through a beam splitter.

[0044] The beam splitter can be controlled so that a portion of the first laser beam (L1) is reflected and a portion of the first laser beam (L1) is transmitted. The shape of the beam splitter may be plate type or cube type, but is not limited thereto.

[0045] By coating multiple layers on the beam splitter to form a multilayer reflective film on the beam splitter, the reflection efficiency can be optimized for a specific wavelength.

[0046] The operation mode of the first path changer (111) may be either a manual mode controlled manually or an automatic mode controlled automatically.

[0047] In manual mode, the operator can directly set the branching angle and intensity of each of the first branch laser beam (SL1) and the second branch laser beam (SL2).

[0048] In automatic mode, feedback can be provided to the control module based on information including the pattern of the first reflected beam detected by the observation unit (140). At least one of the alignment, angle of incidence, and focus of the first integrated beam (AL1) can be corrected by a separately provided control module.

[0049] The first branched laser beam (SL1) and the second branched laser beam (SL2) branched from the first path changing section (111) can form a first integrated beam (AL1) by passing through the slit optical section (120) and the focal section.

[0050] In this specification, only the first laser beam (L1) is shown branching into two laser beams (first branch laser beam (SL1) and second branch laser beam (SL2)), but is not limited thereto. For example, the first laser beam (L1) may be branched into three or four laser beams.

[0051] Additionally, although the present specification illustrates only one laser beam (first laser beam (L1)) being incident on the first path changing unit (111), it is not limited thereto. For example, two or three laser beams may be incident on the first path changing unit (111).

[0052] A branched laser beam is incident on the slit optical section (120) and can pass through the slit optical section (120). In other words, the first branched laser beam (SL1) and the second branched laser beam (SL2) are incident on the slit optical section (120) and can pass through the slit optical section (120).

[0053] The slit optical section (120) can adjust the size of the cross-sections of the first branch laser beam (SL1) and the second branch laser beam (SL2). Adjusting the size of the cross-sections of the first branch laser beam (SL1) and the second branch laser beam (SL2) may be used to adjust the energy delivered per unit area of ​​the wafer when the first branch laser beam (SL1) and the second branch laser beam (SL2) are incident on the wafer.

[0054] The slit optical section (120) can form the cross-sections of the first branched laser beam (SL1) and the second branched laser beam (SL2) with a constant width. The fact that the cross-sections of the first branched laser beam (SL1) and the second branched laser beam (SL2) are formed with a constant width means that the shape of each of the first branched laser beam (SL1) and the second branched laser beam (SL2) is maintained so that the first branched laser beam (SL1) and the second branched laser beam (SL2) can deliver a constant energy onto the wafer. The slit optical section (120) can prevent mutual interference between the first branched laser beam (SL1) and the second branched laser beam (SL2). In addition, diffuse reflection can be prevented when the first branched laser beam (SL1) and the second branched laser beam (SL2) that have passed through the slit optical section (120) are incident on the wafer.

[0055] When the first branched laser beam (SL1) and the second branched laser beam (SL2), which are branched from the first laser beam (L1), are incident on the wafer as they are, the distribution of energy delivered to the wafer may become non-uniform. The slit optical unit (120) forms the cross-sections of the first branched laser beam (SL1) and the second branched laser beam (SL2) with a constant width, thereby making the distribution of energy delivered to the wafer uniform. Accordingly, the slit optical unit (120) can contribute to the smooth formation of a round-shaped cut surface when cutting the wafer.

[0056] The first focal part (151) may be a focusing optical system. In other words, the first focal part (151) may be configured to precisely focus the first branched laser beam (SL1) and the second branched laser beam (SL2) into a single focal point when the first branched laser beam (SL1) and the second branched laser beam (SL2), which are branched from the first path changing part (111), pass through the slit optical part (120) and are incident on the first focal part (151).

[0057] The first focal part (151) can form a first integrated beam (AL1) by focusing the first branched laser beam (SL1) and the second branched laser beam (SL2) that have passed through the slit optical part (120) into a single focal point (e.g., the first focal point). The first focal part (151) can accurately direct the first integrated beam (AL1) onto a wafer placed on the support part (SP).

[0058] The first focusing unit (151) may include a focusing lens used to focus the first branched laser beam (SL1) and the second branched laser beam (SL2) into a single focus, and an adjusting lens that corrects the focusing error according to the branching angle of the first branched laser beam (SL1) or the second branched laser beam (SL2).

[0059] In some embodiments, the first focal part (151) may include an actuator. The actuator can automatically adjust the position of the focal point based on information including the pattern of the first reflected beam detected by the observation part (140), the height of the wafer placed on the support part (SP) in the vertical direction, or changes in conditions during the semiconductor manufacturing process.

[0060] The first integrated beam (AL1) can be incident diagonally onto a wafer on the support member (SP). In order for the first integrated beam (AL1) to be incident diagonally onto a wafer on the support member (SP), the movement path of the first integrated beam (AL1) can be controlled by at least one of the first path changing member (111), the slit optical member (120), and the first focusing member (151). When the first integrated beam (AL1) is incident diagonally onto a wafer on the support member (SP), the cut surface of the wafer can be formed in a round shape.

[0061] The first reflected beam may refer to the beam reflected from the wafer after the first integrated beam (AL1) is incident on the wafer.

[0062] The observation unit (140) can monitor the pattern of a first reflected beam generated in a semiconductor manufacturing process. The pattern of the first reflected beam may be information necessary to verify the processing status of the wafer. For example, the pattern of the first reflected beam may include at least one of the intensity, interference, and distribution of the first reflected beam.

[0063] The observation unit (140) can analyze the pattern of the first reflected beam to calculate at least one of the alignment error, focal length change, and incident angle deviation of the first integrated beam (AL1).

[0064] The observation unit (140) can transmit information including the result calculated by analyzing the pattern of the first reflected beam to the first path changing unit (111), the slit optical unit (120), or the first focus unit (151). For convenience of explanation, the information including the result calculated by analyzing the pattern of the first reflected beam is referred to as the first information.

[0065] The first path changing unit (111), the slit optical unit (120), or the first focusing unit (151) can adjust the alignment, focus position, or incident angle of at least one of the first branched laser beam (SL1), the second branched laser beam (SL2), and the first integrated beam (AL1) based on information including the result calculated by analyzing the pattern of the first reflected beam transmitted from the observation unit (140). In other words, based on the first information, at least one of the first path changing unit (111), the slit optical unit (120), and the first focusing unit (151) can correct the alignment, focus position, or incident angle of the first branched laser beam (SL1) and the second branched laser beam (SL2). Accordingly, based on the first information, at least one of the first path changing unit (111), the slit optical unit (120), and the first focusing unit (151) can correct the alignment, focus position, or incident angle of the first integrated beam (AL1).

[0066] The observation unit (140) may include a white light source (141), an infrared light source (142), a camera (143), and a focus adjustment module (144).

[0067] The white light source (141) may be a light source that emits light in the visible light range (about 400 to 700 nm). The light in the visible light range emitted from the white light source (141) may be a light source for non-processing. The light in the visible light range emitted from the white light source (141) may be used to observe the condition of the wafer surface or to focus the camera (143).

[0068] The infrared light source may be a light source that emits light in the infrared region (about 0.8 to 2.0 μm). The infrared light emitted from the infrared light source can penetrate the wafer, so it can be used to non-destructively check the bonding, alignment state, or alignment error of the lower layer of the wafer.

[0069] The camera (143) can receive light in the visible light region reflected from the wafer or light in the infrared region emitted from an infrared light source reflected from the wafer. In other words, the camera (143) can receive reflected light reflected from the wafer.

[0070] The camera (143) can detect whether the center axis of the laser beam coincides with the wafer cutting line. Additionally, the camera (143) can calculate the focal position, and information including the focal position can be transmitted to the focus adjustment module (144). Furthermore, since the camera (143) can detect whether the reflected light pattern changes, the camera (143) can be used to determine whether there is a process abnormality.

[0071] The focus adjustment module (144) can automatically maintain the focus position of the camera (143). Since the focus position of the camera (143) is automatically maintained, detecting whether the camera (143) aligns with the center axis of the laser beam and the wafer cutting line, and determining whether there is a process abnormality, can be performed in real time.

[0072] A wafer may be placed on a support (SP). The support (SP) may be configured to support the wafer. For example, the support (SP) may be an electrostatic chuck (ESC) or a vacuum chuck, but is not limited thereto.

[0073] When using the first path changing unit (111), slit optical unit (120), first focusing unit (151), and observation unit (140), the first integrated beam (AL1) can be controlled to be incident on the wafer at an oblique angle. When the first integrated beam (AL1) is incident on the wafer at an oblique angle, the cutting surface may be in a rounded shape. Accordingly, damage to the corner portion of the semiconductor chip formed by the semiconductor manufacturing process can be prevented.

[0074] FIG. 2 is a drawing for explaining a semiconductor processing apparatus applying a semiconductor processing system according to some embodiment of the present invention. FIG. 3 is a drawing for explaining a configuration for controlling the path of a laser beam in a semiconductor processing system according to some embodiment of the present invention. The description of the configuration identical to FIG. 1 in FIG. 1 among the contents of FIG. 2 and FIG. 3 may be the same as the description of FIG. 1.

[0075] Referring to FIGS. 2 and FIGS. 3, the semiconductor processing system (100) may include a configuration for controlling the path of a laser beam illustrated in FIG. 1. The semiconductor processing system (100) may include a first path changing unit (111), a second path changing unit (112), a slit optical unit (120), a first focusing unit (151), a second focusing unit (152), an observation unit (140), and an AOD optical unit (130).

[0076] A first laser beam (L1) can be incident on the first path changing unit (111). The first laser beam (L1) incident on the first path changing unit (111) can be branched into a first branched laser beam (SL1) and a second branched laser beam (SL2).

[0077] The branching angle and branching direction of each of the first branched laser beam (SL1) and the second branched laser beam (SL2) can be precisely controlled. Accordingly, the first integrated beam (AL1) can be controlled to be accurately incident on the target area.

[0078] In some embodiments, the first path changing unit (111) can control the branching angle and intensity of each of the first branched laser beam (SL1) and the second branched laser beam (SL2) through reflective mirrors (M1, M2).

[0079] In some embodiments, the first path changing unit (111) can split the first laser beam (L1) into the first branched laser beam (SL1) and the second branched laser beam (SL2), respectively, through a beam splitter.

[0080] The operation mode of the first path changer (111) may be either a manual mode controlled manually or an automatic mode controlled automatically.

[0081] The branched laser beams can pass through the slit optical section (120). In other words, the first branched laser beam (SL1) and the second branched laser beam (SL2) can pass through the slit optical section (120).

[0082] The slit optical unit (120) can adjust the size of the cross-sections of the first branch laser beam (SL1) and the second branch laser beam (SL2).

[0083] The slit optical section (120) can form the cross-sections of the first branched laser beam (SL1) and the second branched laser beam (SL2) with a constant width.

[0084] The slit optical section (120) can contribute to the smooth formation of a round-shaped cut surface when cutting a wafer.

[0085] The first focal part (151) may be a focusing optical system. In other words, the first focal part (151) may be configured to precisely focus the first branched laser beam (SL1) and the second branched laser beam (SL2) into a single focal point when the first branched laser beam (SL1) and the second branched laser beam (SL2), which are branched from the first path changing part (111), pass through the slit optical part (120) and are incident on the first focal part (151). For example, the first focal part (151) may precisely focus the first branched laser beam (SL1) and the second branched laser beam (SL2) into a first focal point.

[0086] The first focal part (151) can form a first integrated beam (AL1) by focusing the first branched laser beam (SL1) and the second branched laser beam (SL2) that have passed through the slit optical part (120) into a single focal point (e.g., the first focal point). The first focal part (151) can accurately direct the first integrated beam (AL1) onto a wafer placed on the support part (SP).

[0087] The first focusing unit (151) may include a focusing lens used to focus the first branched laser beam (SL1) and the second branched laser beam (SL2) into a single focus, and an adjusting lens that corrects the focusing error according to the branching angle of the first branched laser beam (SL1) or the second branched laser beam (SL2).

[0088] In some embodiments, the first focal part (151) may include an actuator. The actuator can automatically adjust the position of the focal point based on information including the pattern of the first reflected beam detected by the observation part (140), the height of the wafer placed on the support part (SP) in the vertical direction, or changes in conditions during the semiconductor manufacturing process.

[0089] A second laser beam (L2) can be incident on the second path changer (112).

[0090] The movement path of the second laser beam (L2) can be precisely controlled by the second path changing unit (112). Therefore, the second laser beam (L2) can be controlled to be accurately incident on the target area. In other words, the second path changing unit (112) can adjust the path of the second laser beam (L2).

[0091] In some embodiments, the second path changing unit (112) can control the movement path of the second laser beam (L2) through the reflective mirrors (M1, M2). By adjusting the angle formed between the second laser beam (L2) and the reflective mirrors (M1, M2), the movement path of the second laser beam (L2) reflected from the reflective mirrors (M1, M2) can be controlled. In other words, the movement path of the second laser beam (L2) can be controlled according to the degree of tilting of the reflective mirrors (M1, M2).

[0092] For example, the reflective mirrors (M1, M2) may be coated with a metal or dielectric material. The reflective mirrors (M1, M2) may be designed to have a high reflectivity through the metal or dielectric coating. Additionally, by coating multiple layers to form a multilayer reflective film on the reflective mirrors (M1, M2), the reflection efficiency can be optimized to match a specific wavelength.

[0093] For example, the reflecting mirrors (M1, M2) can control polarization. Since the reflectivity can vary depending on the polarization state of the laser beam, the intensity of the laser beam can be controlled by adjusting the polarization angle of the reflecting mirrors (M1, M2).

[0094] The reflective mirrors (M1, M2) of the second path changing unit (112) can control the second integrated beam (AL2) to deviate from an axis perpendicular to the wafer, thereby controlling the second integrated beam (AL2) to be incident on the wafer at an oblique direction. The reflective mirrors (M1, M2) of the second path changing unit (112) can precisely adjust the direction of the second laser beam (L2), thereby controlling the second integrated beam (AL2) to be accurately incident on the AOD optical unit (130). Additionally, the reflective mirrors (M1, M2) of the second path changing unit (112) can control the angle formed by the second laser beam (L2) with the AOD optical unit (130), which can contribute to forming a round-shaped cutting surface when cutting the wafer.

[0095] The second laser beam (L2), whose movement path is controlled by the second path changing unit (112), is incident on the AOD optical unit (130) and can pass through the AOD optical unit (130).

[0096] The AOD (Acousto-Optic Deflector) optical unit (130) can adjust the amplitude or frequency of the second laser beam (L2). When the amplitude or frequency of the second laser beam (L2) is adjusted, the direction of propagation and the angle of incidence of the second laser beam (L2) can be controlled.

[0097] The AOD optical unit (130) can generate ultrasound and pass the ultrasound through a medium in which the refractive index changes due to ultrasound. When the second laser beam (L2) passes through the AOD optical unit (130), the laser beam can be diffracted. Thus, the diffraction angle of the laser beam can be adjusted.

[0098] In other words, the AOD optical unit (130) can control the diffraction angle by adjusting the amplitude and frequency of the second laser beam (L2), so that the incident angle and direction of travel of the second laser beam (L2) can be precisely adjusted.

[0099] In some embodiments, the AOD optical unit (130) can automatically adjust the angle of incidence or focal position of the second laser beam (L2) diffracted by the AOD optical unit (130) based on information including the pattern of the second reflected beam detected by the observation unit (140).

[0100] The second reflected beam may refer to the beam reflected from the wafer after the second integrated beam (AL2) is incident on the wafer.

[0101] The AOD optical unit (130) may include a radio frequency oscillator that generates an electrical signal, a piezoelectric transducer that converts the electrical signal into sound waves to generate ultrasound, and a crystal diffraction grating in which the refractive index can be changed by ultrasound. The crystal diffraction grating may include TeO2, SiO2, and LiNbO3, but is not limited thereto.

[0102] Since the AOD optical unit (130) responds immediately to an electrical signal, precise control is possible. The AOD optical unit (130) has the characteristic of responding immediately to an electrical signal while changing the incident angle of the second laser beam (L2) in real time, so it can control the curvature of the cut cross-section of the wafer.

[0103] In addition, the AOD optical unit (130) can simultaneously generate multiple diffracted beams at different frequencies, thereby contributing to the symmetrical formation of left and right rounded cut surfaces. Furthermore, unlike the slit optical unit (120), which operates by a mechanical method such as opening and closing a slit, the AOD optical unit (130) operates by an electrical signal, so it can have excellent durability.

[0104] The second focal section (152) may be a focusing optical system. In other words, the second focal section (152) may be configured to precisely focus the second laser beam (L2) to a single focal point when the second laser beam (L2), whose movement path has been changed in the second path changing section (112), passes through the AOD optical section (130) and is incident on the second focal section (152). For example, the second focal section (152) may precisely focus the second laser beam (L2) to a second focal point.

[0105] The second focal part (152) can form a second integrated beam (AL2) by focusing the second laser beam (L2) that has passed through the AOD optical part (130) into a single focal point (e.g., the second focal point). The second focal part (152) can accurately direct the second integrated beam (AL2) onto a wafer placed on the support part (SP).

[0106] The second focus unit (152) may include a focusing lens used to focus the second laser beam (L2) into a single focus and an adjusting lens that corrects the focus error according to the angle at which the second laser beam (L2) is incident on the second focus unit (152).

[0107] In some embodiments, the second focal part (152) may include an actuator. The actuator can automatically adjust the position of the focal point based on information including the pattern of the second reflected beam detected by the observation part (140), the height of the wafer placed on the support part (SP) in the vertical direction, or changes in conditions during the semiconductor manufacturing process.

[0108] The second integrated beam (AL2) can be incident diagonally onto the wafer on the support member (SP). In order for the second integrated beam (AL2) to be incident diagonally onto the wafer on the support member (SP), the movement path of the second integrated beam (AL2) can be controlled by at least one of the second path changing member (112), the AOD optical member (130), and the second focusing member (152). When the second integrated beam (AL2) is incident diagonally onto the wafer on the support member (SP), the cut surface of the wafer can be formed in a round shape.

[0109] The observation unit (140) can monitor the pattern of the first reflected beam and the pattern of the second reflected beam generated in the semiconductor manufacturing process. The pattern of the first reflected beam and the pattern of the second reflected beam may be information necessary to verify the processing status of the wafer. For example, the pattern of the first reflected beam and the second reflected beam may include at least one of the intensity of the first reflected beam or the intensity of the second reflected beam, the interference of the first reflected beam or the interference of the second reflected beam, and the distribution of the first reflected beam or the distribution of the second reflected beam.

[0110] The observation unit (140) can analyze the pattern of the first reflected beam to calculate at least one of the alignment error, focal length change, and incident angle deviation of the first integrated beam (AL1). The observation unit (140) can analyze the pattern of the second reflected beam to calculate at least one of the alignment error, focal length change, and incident angle deviation of the second integrated beam (AL2).

[0111] The observation unit (140) can transmit information including the result calculated by analyzing the pattern of the first reflected beam to the first path changing unit (111), the slit optical unit (120), or the first focus unit (151). For convenience of explanation, the information including the result calculated by analyzing the pattern of the first reflected beam is referred to as the first information.

[0112] The first path changing unit (111), the slit optical unit (120), or the first focusing unit (151) can adjust the alignment, focus position, or incident angle of at least one of the first branched laser beam (SL1), the second branched laser beam (SL2), and the first integrated beam (AL1) based on information including the result calculated by analyzing the pattern of the first reflected beam transmitted from the observation unit (140). In other words, based on the first information, at least one of the first path changing unit (111), the slit optical unit (120), and the first focusing unit (151) can correct the alignment, focus position, or incident angle of the first branched laser beam (SL1) and the second branched laser beam (SL2). Accordingly, based on the first information, at least one of the first path changing unit (111), the slit optical unit (120), and the first focusing unit (151) can correct the alignment, focus position, or incident angle of the first integrated beam (AL1).

[0113] The observation unit (140) can transmit information including the result calculated by analyzing the pattern of the second reflected beam to the second path changing unit (112), the AOD optical unit (130), or the second focusing unit (152). For convenience of explanation, the information including the result calculated by analyzing the pattern of the second reflected beam is referred to as the second information.

[0114] The second path changing unit (112), the AOD optical unit (130), or the second focusing unit (152) can adjust the alignment, focus position, or incident angle of the second integrated beam (AL2) based on information including the result calculated by analyzing the pattern of the second reflected beam transmitted from the observation unit (140). In other words, based on the second information, at least one of the second path changing unit (112), the AOD optical unit (130), and the second focusing unit (152) can correct the alignment, focus position, or incident angle of the second laser beam (L2). Accordingly, based on the second information, at least one of the second path changing unit (112), the AOD optical unit (130), and the second focusing unit (152) can correct the alignment, focus position, or incident angle of the second integrated beam (AL2).

[0115] The observation unit (140) may include a white light source (141), an infrared light source (142), a camera (143), and a focus adjustment module (144).

[0116] In the present specification, the alignment optical system (160) may mean a set of a first focus unit (151), a second focus unit (152), and an observation unit (140).

[0117] Only one of the first integrated beam (AL1) and the second integrated beam (AL2) may be used in the semiconductor manufacturing process. If using only one of the first integrated beam (AL1) and the second integrated beam (AL2) is sufficient in the semiconductor manufacturing process, the semiconductor manufacturing process may be performed by selecting the more suitable one of the first integrated beam (AL1) and the second integrated beam (AL2).

[0118] The first integrated beam (AL1) and the second integrated beam (AL2) can be used simultaneously in a semiconductor manufacturing process. When a semiconductor manufacturing process is performed using the first integrated beam (AL1) and the second integrated beam (AL2) in a semiconductor manufacturing process, a singulation process can be performed to separate the wafer into individual semiconductor chips.

[0119] FIG. 4 is a drawing for explaining a semiconductor processing apparatus applying a semiconductor processing system according to some embodiment of the present invention. FIG. 5 is a drawing for explaining a configuration for controlling the path of a laser beam in a semiconductor processing system according to some embodiment of the present invention. The description of the configuration identical to FIG. 1 to FIG. 3 in FIG. 4 and FIG. 5 may be the same as the description of FIG. 1 to FIG. 3.

[0120] Referring to FIGS. 4 and 5, the semiconductor processing system (100) may include a first path changing unit (111), a second path changing unit (112), a slit optical unit (120), a focusing unit (150), an observation unit (140), and an AOD optical unit (130).

[0121] The first laser beam (L1) can be incident on the first path changing section (111).

[0122] The movement path of the first laser beam (L1) can be precisely controlled by the first path changing unit (111). Therefore, the first laser beam (L1) can be controlled to be accurately incident on the target area. In other words, the first path changing unit (111) can adjust the path of the first laser beam (L1).

[0123] In some embodiments, the first path changing unit (111) can control the movement path of the first laser beam (L1) through the reflective mirrors (M1, M2). By adjusting the angle formed between the first laser beam (L1) and the reflective mirrors (M1, M2), the movement path of the first laser beam (L1) reflected from the reflective mirrors (M1, M2) can be controlled. In other words, the movement path of the first laser beam (L1) can be controlled according to the degree of tilting of the reflective mirrors (M1, M2).

[0124] For example, the reflective mirrors (M1, M2) may be coated with a metal or dielectric material. The reflective mirrors (M1, M2) may be designed to have a high reflectivity through the metal or dielectric coating. Additionally, by coating multiple layers to form a multilayer reflective film on the reflective mirrors (M1, M2), the reflection efficiency can be optimized to match a specific wavelength.

[0125] For example, the reflecting mirrors (M1, M2) can control polarization. Since the reflectivity can vary depending on the polarization state of the laser beam, the intensity of the laser beam can be controlled by adjusting the polarization angle of the reflecting mirrors (M1, M2).

[0126] The reflective mirrors (M1, M2) of the first path changing unit (111) can control the integrated beam (AL) to deviate from an axis perpendicular to the wafer, thereby controlling the integrated beam (AL) to be incident on the wafer at an oblique direction. The reflective mirrors (M1, M2) of the first path changing unit (111) can precisely adjust the direction of the first laser beam (L1), thereby controlling the integrated beam (AL) to be accurately incident on the slit optical unit (120). Additionally, the reflective mirrors (M1, M2) of the first path changing unit (111) can control the angle formed by the first laser beam (L1) with the slit optical unit (120), which can contribute to forming a round-shaped cutting surface when cutting the wafer.

[0127] The first laser beam (L1), whose movement path is controlled by the first path changing unit (111), is incident on the slit optical unit (120) and can pass through the slit optical unit (120).

[0128] The slit optical section (120) can adjust the size of the cross-section of the first laser beam (L1).

[0129] The slit optical section (120) can form a cross-section of the first laser beam (L1) with a constant width.

[0130] The slit optical section (120) can contribute to the smooth formation of a round-shaped cut surface when cutting a wafer.

[0131] A second laser beam (L2) can be incident on the second path changer (112).

[0132] The movement path of the second laser beam (L2) can be precisely controlled by the second path changing unit (112). Therefore, the second laser beam (L2) can be controlled to be accurately incident on the target area. In other words, the second path changing unit (112) can adjust the path of the second laser beam (L2).

[0133] In some embodiments, the second path changing unit (112) can control the movement path of the second laser beam (L2) through the reflective mirrors (M1, M2). By adjusting the angle formed between the second laser beam (L2) and the reflective mirrors (M1, M2), the movement path of the second laser beam (L2) reflected from the reflective mirrors (M1, M2) can be controlled. In other words, the movement path of the second laser beam (L2) can be controlled according to the degree of tilting of the reflective mirrors (M1, M2).

[0134] For example, the reflective mirrors (M1, M2) may be coated with a metal or dielectric material. The reflective mirrors (M1, M2) may be designed to have a high reflectivity through the metal or dielectric coating. Additionally, by coating multiple layers to form a multilayer reflective film on the reflective mirrors (M1, M2), the reflection efficiency can be optimized to match a specific wavelength.

[0135] For example, the reflecting mirrors (M1, M2) can control polarization. Since the reflectivity can vary depending on the polarization state of the laser beam, the intensity of the laser beam can be controlled by adjusting the polarization angle of the reflecting mirrors (M1, M2).

[0136] The reflective mirrors (M1, M2) of the second path changing unit (112) can control the integrated beam (AL) to deviate from an axis perpendicular to the wafer, thereby controlling the integrated beam (AL) to be incident on the wafer at an oblique direction. The reflective mirrors (M1, M2) of the second path changing unit (112) can precisely adjust the direction of the second laser beam (L2), thereby controlling the integrated beam (AL) to be accurately incident on the AOD optical unit (130). Additionally, the reflective mirrors (M1, M2) of the second path changing unit (112) can control the angle formed by the second laser beam (L2) with the AOD optical unit (130), which can contribute to forming a round-shaped cutting surface when cutting the wafer.

[0137] The second laser beam (L2), whose movement path is controlled by the second path changing unit (112), is incident on the AOD optical unit (130) and can pass through the AOD optical unit (130).

[0138] The AOD optical unit (130) can adjust the amplitude or frequency of the second laser beam (L2). When the amplitude or frequency of the second laser beam (L2) is adjusted, the direction of travel and the angle of incidence of the second laser beam (L2) can be controlled.

[0139] The AOD optical unit (130) can control the diffraction angle by adjusting the amplitude and frequency of the second laser beam (L2), so that the incident angle and direction of travel of the second laser beam (L2) can be precisely adjusted.

[0140] The focusing unit (150) may be a focusing optical system. In other words, the focusing unit (150) may be configured to precisely focus a first laser beam (L1) whose travel path is changed at the first path changing unit (111) and which passes through the slit optical unit (120), and a second laser beam (L2) whose travel path is changed at the second path changing unit (112) and which passes through the AOD optical unit (130), into a single focus (e.g., a focusing focus). For example, the focusing unit (150) may precisely focus the first laser beam (L1) and the second laser beam (L2) into a focusing focus.

[0141] The focusing unit (150) can form an integrated beam (AL) by focusing the first laser beam (L1) that has passed through the slit optical unit (120) and the second laser beam (L2) that has passed through the AOD optical unit (130) into a single focus (e.g., a focusing focus). The focusing unit (150) can accurately direct the integrated beam (AL) onto a wafer placed on the support unit (SP).

[0142] The focusing unit (150) may include a focusing lens used to focus a first laser beam (L1) that has passed through the slit optical unit (120) and a second laser beam (L2) that has passed through the AOD optical unit (130) into a single focus, and a correction lens that corrects the focus error according to the angle at which the first laser beam (L1) that has passed through the slit optical unit (120) and the second laser beam (L2) that has passed through the AOD optical unit (130) are incident on the focusing unit (150).

[0143] In some embodiments, the focusing unit (150) may include an actuator. The actuator can automatically adjust the position of the focus based on the vertical height of the wafer placed on the support (SP) or changes in semiconductor manufacturing process conditions, based on information including the pattern of the reflected beam detected by the observation unit (140).

[0144] The integrated beam (AL) can be incident diagonally onto a wafer on the support member (SP). In order for the integrated beam (AL) to be incident diagonally onto the wafer on the support member (SP), the movement path of the integrated beam (AL) can be controlled by at least one of the first path changing unit (111), the slit optical unit (120), the focusing focal unit (150), the second path changing unit (112), and the AOD optical unit (130). When the integrated beam (AL) is incident diagonally onto the wafer on the support member (SP), the cut surface of the wafer can be formed in a round shape.

[0145] The reflected beam can refer to the beam reflected from the wafer after the integrated beam (AL) is incident on the wafer.

[0146] The observation unit (140) can monitor the pattern of the reflected beam generated during the semiconductor manufacturing process. The pattern of the reflected beam may be information necessary to verify the processing status of the wafer. For example, the pattern of the reflected beam may include at least one of the intensity of the reflected beam, the interference of the reflected beam, and the distribution of the reflected beam.

[0147] The observation unit (140) can analyze the pattern of the reflected beam to calculate at least one of the alignment error, focal length change, and incident angle deviation of the integrated beam (AL).

[0148] The observation unit (140) can transmit information including the result calculated by analyzing the pattern of the reflected beam to the first path changing unit (111), the slit optical unit (120), the second path changing unit (112), the AOD optical unit (130), or the focusing unit (150). For convenience of explanation, the information including the result calculated by analyzing the pattern of the reflected beam is referred to as the third information.

[0149] The first path changing unit (111), slit optical unit (120), second path changing unit (112), AOD optical unit (130), or focusing unit (150) can adjust the alignment, focus position, or incident angle of at least one of the first laser beam (L1), the second laser beam (L2), and the focusing beam (AL) based on information including the result calculated by analyzing the pattern of the reflected beam transmitted from the observation unit (140). In other words, based on the third information, at least one of the first path changing unit (111), slit optical unit (120), focusing unit (150), second path changing unit (112), and AOD optical unit (130) can correct the alignment, focus position, or incident angle of the first laser beam (L1) and the second laser beam (L2). Accordingly, based on the third information, at least one of the first path changing unit (111), slit optical unit (120), focusing focal unit (150), second path changing unit (112) and AOD optical unit (130) can correct the alignment, focal position, or incident angle of the integrated beam (AL).

[0150] The observation unit (140) may include a white light source (141), an infrared light source (142), a camera (143), and a focus adjustment module (144).

[0151] In this specification, the term "alignment optical system (160)" may refer to a set of a focusing unit (150) and an observation unit (140).

[0152] The integrated beam (AL) may be a combination of a first laser beam (L1) and a second laser beam (L2). Therefore, when performing a semiconductor manufacturing process using the integrated beam (AL), the process time can be significantly reduced compared to when performing a semiconductor manufacturing process using the first laser beam (L1) and the second laser beam (L2) separately.

[0153] Although the present invention has been described above with reference to the illustrated drawings, the present invention is not limited by the embodiments and drawings disclosed in this specification, and it is obvious that various modifications can be made by a person skilled in the art within the scope of the technical concept of the present invention. Furthermore, even if the effects of the configuration of the present invention were not explicitly described while explaining the embodiments of the present invention above, it is natural to acknowledge that the effects predictable by said configuration should also be recognized. Explanation of the symbols

[0154] 100: Semiconductor processing system 111: 1st path change section 112: Second path change section 120: Slit optical section 130: AOD Optical Unit 140: Observation Department 141: White light source 142: Infrared light source 143: Camera 144: Focus adjustment module 150: Focusing point 151: First focal point 152: Second focal point 160: Alignment optical system M1: First reflective mirror M2: Second reflective mirror A1: 1st optical module A2: 2nd optical module AL: Integrated beam AL1: 1st integrated beam AL2: Second integrated beam L1: 1st laser beam L2: Second laser beam SL1: 1st branch laser beam SL2: Second branch laser beam SP: Support

Claims

Claim 1 A first path changing unit capable of controlling the paths of the first branched laser beam and the second branched laser beam, wherein the first laser beam is incident and the first branched laser beam is branched into a first branched laser beam and a second branched laser beam; a slit optical unit capable of controlling the cross-section of the first branched laser beam and the cross-section of the second branched laser beam, wherein the first branched laser beam and the second branched laser beam are incident and the size of the cross-section of the first branched laser beam and the second branched laser beam is controlled; a first focusing unit capable of converging the first branched laser beam and the second branched laser beam that have passed through the slit optical unit into a first focus to form a first integrated beam and incidenting the first integrated beam onto a wafer; a second path changing unit capable of controlling the path of the second laser beam, wherein the second laser beam is incident and the path of the second laser beam is controlled; and an AOD optical unit capable of controlling at least one of the amplitude and frequency of the second laser beam. A semiconductor processing system comprising a second focal point that collects the second laser beam passing through the AOD optical unit to form a second integrated beam and directs the second integrated beam onto the wafer. Claim 2 A semiconductor processing system according to claim 1, wherein the first integrated beam is controlled by at least one of the first path changing unit, the slit optical unit, and the first focal unit so as to be incident diagonally on a wafer on a support member, and the cutting surface of the wafer is formed in a round shape. Claim 3 A semiconductor processing system according to claim 1, further comprising an observation unit that monitors the pattern of a first reflected beam reflected from the wafer by the first integrated beam. Claim 4 A semiconductor processing system according to paragraph 3, wherein the observation unit transmits first information including the pattern of the first reflected beam to at least one of the first path changing unit, the slit optical unit, and the first focal unit. Claim 5 A semiconductor processing system according to claim 4, wherein at least one of the first path changing unit, the slit optical unit, and the first focal unit corrects at least one of the alignment of the first integrated beam, the focal point of the first integrated beam, and the incident angle of the first integrated beam based on the first information. Claim 6 delete Claim 7 A semiconductor processing system according to claim 1, wherein the second integrated beam is controlled by at least one of the second path changing unit, the AOD optical unit, and the second focal unit so as to be incident diagonally on a wafer on a support member, and the cutting surface of the wafer is formed in a round shape. Claim 8 A semiconductor processing system according to claim 1, further comprising an observation unit that monitors the pattern of a first reflected beam reflected from the wafer by the first integrated beam and the pattern of a second reflected beam reflected from the wafer by the second integrated beam. Claim 9 A semiconductor processing system according to claim 8, wherein the observation unit transmits first information including the pattern of the first reflected beam to at least one of the first path changing unit, the slit optical unit, and the first focal unit, or transmits second information including the pattern of the second reflected beam to at least one of the second path changing unit, the AOD optical unit, and the second focal unit. Claim 10 A semiconductor processing system according to claim 9, wherein, based on the first information, at least one of the first path changing unit, the slit optical unit, and the first focal unit corrects at least one of the alignment of the first integrated beam, the focus of the first integrated beam, and the incident angle of the first integrated beam, and based on the second information, at least one of the second path changing unit, the AOD optical unit, and the second focal unit corrects at least one of the alignment of the second integrated beam, the focus of the second integrated beam, and the incident angle of the second integrated beam. Claim 11 A semiconductor processing system comprising: a first path changing unit in which a first laser beam is incident and capable of adjusting the path of the first laser beam; a slit optical unit in which the first laser beam is incident and capable of adjusting the size of the cross-section of the first laser beam; a second path changing unit in which a second laser beam is incident and capable of adjusting the path of the second laser beam; an AOD optical unit in which the second laser beam is incident and at least one of the amplitude and frequency of the second laser beam is adjusted; and a focusing unit that collects the first laser beam and the second laser beam that have passed through the slit optical unit into a focusing focus to form an integrated beam and incidents the integrated beam onto a wafer. Claim 12 A semiconductor processing system according to claim 11, wherein the integrated beam is controlled by at least one of the first path changing unit, the slit optical unit, the focusing focal unit, the second path changing unit, and the AOD optical unit so as to be incident diagonally on a wafer on a support member, and the cutting surface of the wafer is formed in a round shape. Claim 13 A semiconductor processing system according to claim 12, further comprising an observation unit that monitors the pattern of a reflected beam reflected from the wafer by the integrated beam. Claim 14 A semiconductor processing system according to claim 13, wherein the observation unit transmits third information including the pattern of the reflected beam to at least one of the first path changing unit, the slit optical unit, the focusing focal unit, the second path changing unit and the AOD optical unit. Claim 15 A semiconductor processing system according to claim 14, wherein at least one of the first path changing unit, the slit optical unit, the focusing focal unit, the second path changing unit, and the AOD optical unit corrects at least one of the alignment of the integrated beam, the focus of the integrated beam, and the incident angle of the integrated beam based on the third information.

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