Method and Device for Measuring Thickness of Thin Film

Abstract

A method for measuring the thickness of a thin film according to the technical concept of the present invention may include the steps of: measuring the total thickness of a sample having a first layer and a second layer stacked thereon; measuring the signal intensity values ​​of a first and second material contained in the first and second layers, respectively, using a mass spectrometer; deriving a first linear relationship equation using the mass spectrometer that represents a linear relationship between the amount of the first material and the signal intensity and a linear relationship between the amount of the second material and the signal intensity; calculating the amount of the first and second materials, respectively, using the first linear relationship equation and the signal intensity values ​​of the first and second materials contained in the sample, and obtaining the material composition ratio of the sample; deriving a second linear relationship equation that represents a linear relationship between the amount of the first material and the layer thickness and a linear relationship between the amount of the second material and the layer thickness; obtaining the thickness ratio of the first and second layers using the material composition ratio and the second linear relationship equation; and calculating the thickness of each of the first and second layers using the total thickness and the thickness ratio.

Description

Technology Field

[0001] The present disclosure relates to a method for measuring the thickness of a thin film and a thickness measuring device, and more specifically, to a method and device for measuring the thickness of a thin film having a thickness less than or equal to the measurement limit of a thickness measuring means. Background Technology

[0002] In devices requiring thin film formation technology, thin film thickness and high uniformity are essential to ensure device performance optimization, miniaturization, and driving reliability.

[0003] Generally, a method involving incident light on a sample and analyzing the optical variation of the reflected light is used to measure the thickness of a thin film. However, this method presents a problem in that it is difficult to apply to thin films below a certain thickness due to the measurement limitations of the measurement means. Consequently, when the thickness of a thin film optimized for device performance and miniaturization falls below the measurement limit of the thickness monitoring device, it is sometimes unavoidable to deposit the film thicker than the optimized thickness to apply it to the device in order to circumvent monitoring limitations. In this case, problems arise, such as increased production costs due to material consumption and degradation of device performance caused by the formation of material exceeding the optimization range.

[0004] Furthermore, in order to secure device performance and reap the benefits of miniaturization, there are cases where thin films below the aforementioned measurement limits are formed at the expense of proper monitoring. In such cases, even if defects exist in the thin film, they cannot be detected or corrected through monitoring, making it difficult to ensure the operational reliability of the device.

[0005] Meanwhile, various mass spectrometry techniques are used to qualitatively and quantitatively measure the constituent substances of a sample. Such methods may be based on the principle of identifying the type and amount of a substance by analyzing the light emitted when the sample material returns to a steady state after being excited by incident light or particles. The problem to be solved

[0006] The technical concept of the present invention is to measure and monitor the thickness of a thin film having a thickness below the measurement limit of a thickness measuring means. Accordingly, by enabling the thin film thickness to be formed at an optimal value, the invention aims to ensure the operational reliability of the device while simultaneously preventing increased production costs and performance degradation of the device. means of solving the problem

[0007] A method for measuring the thickness of a thin film according to the technical concept of the present invention may include the steps of: measuring the total thickness of a sample having a first layer and a second layer stacked thereon; measuring the signal intensity values ​​of a first and second material contained in the first and second layers, respectively, using a mass spectrometer; deriving a first linear relationship equation using the mass spectrometer that represents a linear relationship between the amount of the first material and the signal intensity and a linear relationship between the amount of the second material and the signal intensity; calculating the amount of the first and second materials, respectively, using the first linear relationship equation and the signal intensity values ​​of the first and second materials contained in the sample, and obtaining the material composition ratio of the sample; deriving a second linear relationship equation that represents a linear relationship between the amount of the first material and the layer thickness and a linear relationship between the amount of the second material and the layer thickness; obtaining the thickness ratio of the first and second layers using the material composition ratio and the second linear relationship equation; and calculating the thickness of each of the first and second layers using the total thickness and the thickness ratio.

[0008] In some embodiments, the step of measuring the total thickness of the sample is performed by a thickness measuring instrument, and the sample to be measured may have at least one of the first and second layers below the measurement limit of the thickness measuring instrument.

[0009] In some embodiments, the step of deriving the first linear relationship may include: preparing a plurality of samples containing different amounts of the first and second substances; measuring the signal intensity of the first and second substances contained in the plurality of samples using the mass spectrometer; and calculating the linear relationship between the amount of the first substance and the signal intensity and the linear relationship between the amount of the second substance and the signal intensity.

[0010] In some embodiments, in the step of obtaining the material composition ratio of the sample, the material composition ratio may be an element concentration ratio.

[0011] In some embodiments, the step of obtaining the material composition ratio of the sample further includes the step of multiplying the material composition ratio by the molecular weight of each of the first and second substances, and the material composition ratio may be a mass concentration ratio.

[0012] In some embodiments, the step of deriving the second linear relationship may include: preparing a first plurality of first samples in which the thickness of the second layer is the same and the thickness of the first layer is different; measuring the total thickness of each of the first plurality of samples; measuring the signal intensity of the first substance contained in each of the first plurality of samples and converting it into a substance amount using the first linear relationship; calculating a second-1 linear relationship between the layer thickness of the first substance and the substance amount; preparing a second plurality of samples in which the thickness of the first layer is the same and the thickness of the second layer is different; measuring the total thickness of each of the second plurality of samples; measuring the signal intensity of the second substance contained in each of the second plurality of samples and converting it into a substance amount using the first linear relationship; and calculating a second-2 linear relationship between the layer thickness of the second substance and the substance amount.

[0013] In some embodiments, the first layer of the sample to be measured by the method for measuring the thickness of the thin film may be a host layer in which no dopant is present, and the second layer may be a dopant layer doped in the host.

[0014] In some embodiments, the dopant has a structure comprising a metal element and a ligand bonded thereto, and the step of measuring the signal intensity values ​​of the first and second materials can measure the signal intensity value of the second material for the metal element.

[0015] In some embodiments, the first and second layers of the sample to which the thin film thickness measurement method is applied are each made of different materials, and the first and second layers may each be a single metal material, an alloy comprising multiple metal materials, or an organic material.

[0016] In some embodiments, the step of measuring the total thickness of the sample may be a step performed by utilizing a change in the polarization state of light incident on the sample that is reflected from the sample.

[0017] In some embodiments, the signal intensity may be measured by at least one of inductively coupled plasma-mass spectrometry (ICP-MS), Raman spectroscopy, time of flight secondary ion mass spectrometry (TOF-SIMS), and laser-induced breakdown spectroscopy (LIBS).

[0018] In some embodiments, the mass spectrometer utilizes a method of irradiating a sample with a laser, and the step of measuring signal intensity values ​​of the first and second substances may include: a step of performing plasma ablation on the sample using the mass spectrometer; and a step of simultaneously outputting spectral data for the first and second substances by light emitted from the plasma of the first and second substances.

[0019] A thin film thickness measuring device according to the technical concept of the present invention comprises: a thickness measuring unit disposed on a sample stage to measure the total thickness value of a sample; a mass spectrometer disposed on the sample stage to quantitatively measure substances included in the sample and measure a signal intensity value; and a calculation unit that receives the total thickness value and the signal intensity value obtained from the thickness measuring unit and the mass spectrometer and calculates the thickness of each of a plurality of thin film layers included in the sample.

[0020] In some embodiments, the operation unit may include a first operation unit that calculates and stores a first linear relationship expression representing a linear relationship between the amount of a substance included in the sample and a signal intensity, and a second linear relationship expression representing a linear relationship between the amount of a substance and a layer thickness; and a second operation unit that calculates the material composition ratio of the sample using the first linear relationship expression and the signal intensity value of the substance included in the sample, calculates the thickness ratio of the thin film layers forming the sample using the material composition ratio and the second linear relationship expression, and calculates the thickness of each of the first and second layers using the total thickness value and the thickness ratio.

[0021] In some embodiments, the thin film thickness measuring device further includes a transport stage on which the sample stage is placed, and the transport stage can move to a first position mode in which the sample stage is placed within the thickness measuring unit, or a second position mode in which the sample stage is placed within the mass analysis unit.

[0022] In some embodiments, the thin film thickness measuring device may further include a moving member connected to the thickness measuring unit and the mass analyzer to place either the thickness measuring unit or the mass analyzer on the sample stage.

[0023] In some embodiments, the thickness measuring unit may be a device that utilizes a change in the polarization state of light incident on the sample that is reflected from the sample.

[0024] In some embodiments, the mass spectrometer may be any one of inductively coupled plasma-mass spectrometry (ICP-MS), Raman spectroscopy, time of flight secondary ion mass spectrometry (TOF-SIMS), and laser-induced decay spectroscopy.

[0025] In some embodiments, each step can be performed according to the thin film thickness measurement method of claim 1.

[0026] A method for measuring the thickness of a thin film according to the technical concept of the present invention may include the steps of: measuring the total thickness value of a sample containing a plurality of materials; deriving the material composition ratio of the plurality of materials; deriving a linear relationship between the amount of material and the layer thickness for each of the plurality of materials; obtaining the thickness ratio of the plurality of materials using the material composition ratio and the linear relationship; and calculating the thickness of each of the plurality of materials using the total thickness value and the thickness ratio.

[0027] In some embodiments, the step of deriving the material composition ratio may be the step of deriving the elemental concentration ratio of the material contained in the sample.

[0028] In some embodiments, the step of deriving a linear relationship between the amount of substance and the layer thickness may include: preparing a plurality of samples in which only the amount of substance for one specific substance among the plurality of substances is varied; measuring the total thickness of each of the plurality of samples; deriving a linear relationship between the layer thickness of the specific substance and the amount of substance; and for each of the plurality of substances, repeating the steps of preparing the plurality of samples, measuring the total thickness of each, and deriving a linear relationship to derive a linear relationship between the layer thickness and the amount of substance of each of the plurality of substances. Effects of the invention

[0029] According to embodiments based on the technical concept of the present invention, the thickness of a thin film having a thickness less than or equal to the measurement limit of a thickness measuring means can be measured to monitor thickness uniformity and the presence of defects. Accordingly, while ensuring the operational reliability of the device, the thickness of the thin film can be formed to an optimal value, thereby preventing increased production costs and degradation of the device's performance. Brief explanation of the drawing

[0030] FIG. 1 is a flowchart sequentially showing each step of a thin film thickness measurement method (M100) according to one embodiment of the technical concept of the present invention. FIGS. 2a and 2b are drawings showing a thin film thickness measuring device (10, 15) according to one embodiment of the technical concept of the present invention. FIG. 3 is a diagram for explaining the thickness measurement principle of a thickness measurement unit (100) included in the thin film thickness measurement device (10, 15) of FIG. 2a and 2b. The enlarged view illustrates a sample (SP) that is the subject of thickness measurement according to the present invention. FIG. 4 is a flowchart that sequentially shows each step to explain in more detail the step (S107) of deriving a first linear relationship between signal intensity and amount of substance in the thin film thickness measurement method (M100) of FIG. 1. FIGS. 5a to 5c are graphs showing the linear relationship derived by the step (S107) of deriving the first linear relationship equation of FIG. 4. FIG. 6 is a flowchart that sequentially shows each step to explain in more detail the step (S113) of deriving a second linear relationship between signal intensity and layer thickness in the thin film thickness measurement method (M100) of FIG. 1. FIG. 7 is a graph obtained by the step (S113B) of measuring the total thickness of a plurality of samples during the step (S113) of deriving the second linear relationship of FIG. 6. FIG. 8 is a graph obtained by the step (S113C) of measuring the signal intensity of a substance included in the measurement target layer of a plurality of samples during the step (S113) of deriving the second linear relationship equation of FIG. 6. FIG. 9 is a drawing illustrating a sample (SP2) including a measurement target layer that can utilize the thin film thickness measurement method (M100) and thickness measurement device (10) of FIG. 1. FIGS. 10a and FIGS. 10b are graphs showing the first linear relationship applied to the sample (SP2) of FIG. 9 and the linear relationship thereof. FIG. 11 is a drawing showing a thin film thickness measuring device (20) according to one embodiment of the technical concept of the present invention. FIG. 12 is a flowchart sequentially showing each step of a thin film thickness measurement method (M200) according to one embodiment of the technical concept of the present invention. FIG. 13 is a drawing showing a thin film thickness measuring device (30) according to one embodiment of the technical concept of the present invention. FIG. 14 is a drawing illustrating a sample (SP3) including a measurement target layer that can utilize the thin film thickness measurement method (M200) of FIG. 12 and the thickness measurement device (30) of FIG. 13. FIG. 15 is a graph showing the signal intensity according to the dopant concentration that is the target of measurement for the mass spectrometer (600) included in the thin film thickness measuring device (30) of FIG. 13. FIG. 16 is a graph showing the first linear relationship applied to the sample (SP3) of FIG. 14 and the linear relationship. FIG. 17 is a drawing showing a thin film thickness measuring device (40) according to one embodiment of the technical concept of the present invention. FIG. 18 is a drawing showing a thin film thickness measuring device (50) according to one embodiment of the technical concept of the present invention. FIGS. 19a and FIGS. 19b are drawings for explaining the resolution of the thickness measuring device (50) of FIG. 18. FIG. 20 is a graph showing the state in which the signal intensity of the substances contained in the sample is simultaneously measured by the thickness measuring device (50) of FIG. 18. Specific details for implementing the invention

[0031] Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein.

[0032] To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification.

[0033] Furthermore, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and thus the present invention is not necessarily limited to what is illustrated. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Additionally, for convenience of explanation, the thickness of some layers and regions has been exaggerated in the drawings.

[0034] Furthermore, when it is said that a part, such as a layer, membrane, region, or plate, is "on" or "on" another part, this includes not only the case where it is "directly above" the other part, but also the case where there is another part in between. Conversely, when it is said that a part is "directly above" another part, it means that there is no other part in between. Also, saying that a part is "on" or "on" a reference part means that it is located above or below the reference part, and does not necessarily mean that it is located "on" or "on" in the direction opposite to gravity.

[0035] Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0036] Additionally, throughout the specification, "planar" means when the subject part is viewed from above, and "cross-sectional" means when the cross-section obtained by vertically cutting the subject part is viewed from the side.

[0037] FIG. 1 is a flowchart sequentially showing each step of a thin film thickness measurement method (M100) according to an embodiment of the technical concept of the present invention. FIG. 2a and FIG. 2b are drawings showing a thin film thickness measurement device (10, 15) according to an embodiment of the technical concept of the present invention. FIG. 2a and FIG. 2b are similar, but differ in the means for performing positional alignment between the sample stage (301) and the thickness measurement unit (100) or the mass analysis unit (200). FIG. 3 is a drawing for explaining the thickness measurement principle of the thickness measurement unit (100) included in the thin film thickness measurement device (10) of FIG. 2a. The enlarged view illustrates a sample (SP) to be measured in thickness according to the present invention.

[0038] Referring to FIG. 1, first, a thickness measuring device (10) and a sample (SP) to be measured are prepared (S101).

[0039] Referring to FIGS. 2a through 3 together, the sample (SP) to be measured may have a stacked structure comprising a measurement target layer (SP1) and a reference layer (SP2). In this case, the thickness (T1) of the measurement target layer (SP1) may be in a range below the measurement limit of the thickness measuring device (10), and thus may be a range where it is difficult to measure the thickness alone, but the total thickness (T) of the sample (SP) SP ) is the thickness obtained by adding the thickness (T1) of the measurement target layer (SP1) and the thickness (T2) of the reference layer (SP2), and may be in a range greater than the measurement limit of the thickness measuring device (10).

[0040] Meanwhile, the measurement target layer (SP1) and the reference layer (SP2) are made of different materials. The measurement target layer (SP1) and the reference layer (SP2) may be different metal materials, but are not limited thereto. In some embodiments, the reference layer (SP2) may be an alloy composed of at least two different metal materials. For example, the measurement target layer (SP1) may be made of ytterbium (Yb) metal, and the reference layer (SP2) may be made of a silver-magnesium (AgMg) alloy. However, the technical concept of the present invention is not limited thereto, and even if the reference layer (SP2) is made of a single material, it may be used as a sample (SP) to be measured by the thickness measurement method (M100) and measurement device (10, 15) of the present invention.

[0041] The thickness measuring device (10) may include a thickness measuring unit (100), a mass analysis unit (200), a transport stage unit (300), and a calculation unit (400). The sample (SP) may be placed and fixed on a sample stand (301) disposed on the transport stage unit (300). The thickness measuring unit (100) and the mass analysis unit (200) are disposed on the transport stage unit (300), and the sample stand (301) may be in a first position mode disposed within the thickness measuring unit (100) or a second position mode disposed within the mass analysis unit (200) by the movement of the transport stage unit (300).

[0042] In FIG. 2a, the sample (SP) is position-aligned with the thickness measuring unit (100) or the mass analysis unit (200) by the transport stage unit (300), but the technical concept of the present invention is not limited thereto. Referring to FIG. 2b, the thickness measuring device (15) may further include a moving member (350) that moves the position of the thickness measuring unit (100) and the mass analysis unit (200). The moving member (350) is connected to the thickness measuring unit (100) and the mass analysis unit (200), respectively, and either the thickness measuring unit (100) or the mass analysis unit (200) may be configured to be position-aligned onto the sample stage (301) by the moving member (350).

[0043] After the above preparation step (S101), the sample (SP) is placed within the thickness measuring unit (100), and the total thickness (T) of the sample (SP) is measured using the thickness measuring unit (100). SP Measures ) (S103).

[0044] The thickness measuring unit (100) above measures the total thickness (T) of a sample (SP) from the change in the polarization state (Δ, Ψ) of the reflected light (Lr) reflected from the sample (SP) when light (Li) having a specific polarization state is incident on the sample (SP). SP It may be a device such as a focal ellipsometer that utilizes the principle of converting ). The electric field vector of light (Li, Lr) has s-waves and p-waves depending on whether it is on the incident plane of the sample surface or perpendicular to the incident plane. There is a difference in magnitude and phase between the electric field vector (Eip, Eis) of the incident light (Li) and the electric field vector (Erp, Ers) of the reflected light (Lr) reflected from the sample (SP). That is, Ψ is the ratio of multiple reflection coefficients between the incident light (Li) and the reflected light (Lr), and Δ is the mutual phase difference between the p-wave and s-wave incident with the same phase after reflection.

[0045] Specifically, the thickness measuring unit (100) may include a light source (101), a light source module (103), a light receiving module (105), and a light detector (107). The light source (101) may be structured to be incident at a specific angle of incidence (θ) rather than perpendicular to the incident plane of the sample (SP), and may be polarized as it passes through a light source module (103) in which a linear polarizer rotates at a constant speed. The incident light (Li) polarized in the light source module (103) is reflected from the surface of the sample (SP), and the reflected light (Lr), whose polarization state has changed according to the optical characteristics of the sample (SP), may be collected by the light receiving module (105). The light receiving module (105) may include a linear polarizer, etc., and may transmit only a specific polarization component. The light passing through the light receiving module (105) can be detected as a signal intensity of current or voltage by a light detector (107). By analyzing the signal of the reflected light (Ir), the elliptical measurement angles ψ and Δ are obtained, and based on this, physical quantities such as the thickness of the sample (SP) can be extracted.

[0046] According to the technical concept of the present invention, the thin film thickness measurement method (M100) and the thickness measurement device (10, 15) are not limited to the aforementioned elliptical measurement method and may be based on the principles of various thickness measurement devices. That is, the thickness measurement unit (100) of the thin film thickness measurement method (M100) and the thickness measurement device (10, 15) may be a null ellipsometer that finds the extinction point by adjusting a linear polarizer and a compensator, a rotating-polarizer ellipsometer in which the linear polarizer of the light source module rotates at a constant speed, a rotating-analyzer ellipsometer in which the linear polarizer of the light receiving module rotates at a constant speed, or a rotating-compensator ellipsometer in which the compensator of the light receiving module rotates at a constant speed, etc.

[0047] The above total thickness (T SP After the measurement step (S103) of the sample (SP), the sample (SP) is placed in the mass spectrometer (100), and the signal intensity of the substance contained in the sample (SP) is measured using the mass spectrometer (100) (S105). As described above, the following example is given in which the sample (SP) consists of a measurement target layer (SP1) of ytterbium (Yb) metal and a reference layer (SP2) of a silver-magnesium alloy. For convenience of explanation, silver (Ag) is referred to as the first substance, magnesium (Mg) as the second substance, and ytterbium (Yb) metal as the first substance. That is, in this step, the signal intensities I1, I2, and I3 for the first to third substances contained in the sample (SP) are measured respectively using the mass spectrometer (100).

[0048] The above mass spectrometer (100) may be a device based on the principle of confirming the type and amount of a sample material. For example, the above mass spectrometer (100) may be a device utilizing the principle of Inductively Coupled Plasma-Mass Spectrometry (ICP-MS), which can quantitatively detect ionized atoms by extracting electrons during the process of ionizing the sample material to generate free electrons and atoms.

[0049] The above mass spectrometer (100) may include a light source (201), a light splitter (203), an objective lens (205), a chamber (207), a carrier source (209), a mass measuring unit (211), a focusing lens (213), a spectroscopic unit (215), and a light detector (217).

[0050] Specifically, a sample (SP) to be analyzed is introduced into the chamber (207), and the sample (SP) can be atomized and ionized by a carrier gas formed from the carrier source (209) and a laser projected from the light source (201) through a light splitter (203) and an objective lens (205). The ionized sample is introduced into a mass measuring unit (211), and the mass measuring unit (211) can output an intensity value for the concentration of each substance constituting the sample (SP). The focusing lens (213) and the spectroscopic unit (215) can collect light generated by the sample (SP) within the chamber (207). The computational unit (400) can analyze the type of substance contained in the sample (SP) based on the data collected from the spectroscopic unit (215).

[0051] However, the mass analysis unit (100) according to the technical concept of the present invention is not limited to an inductively coupled plasma mass spectrometer, and may be a device that employs other types of mass analysis techniques capable of qualitative and quantitative analysis of matter, such as a Raman spectrometer, Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS), and Laser Induced Breakdown Spectroscopy (LIBS). A thin film thickness measurement device (30, 40) utilizing the principles of a Raman spectrometer, Time of Flight Secondary Ion Mass Spectrometer, and Laser Induced Breakdown Spectroscopy (LIBS) will be described later with reference to FIG. 13 and FIG. 17.

[0052] Meanwhile, in order to convert the signal intensity of a substance contained in a sample (SP) into a substance amount, a first linear relationship between the signal intensity and the substance amount for each of the first to third substances is required (S107).

[0053] FIG. 4 is a flowchart that sequentially illustrates each step to explain in more detail the step (S107) of deriving a first linear relationship between signal intensity and amount of substance in the thin film thickness measurement method (M100) of FIG. 1. FIG. 5a to 5c are graphs showing the linear relationship derived by the step (S107) of deriving the first linear relationship of FIG. 4.

[0054] Referring to FIGS. 4 and FIGS. 5a to 5c, first, a plurality of samples such as a first sample (S1), a second sample (S2), a third sample (S3), a fourth sample (S4), and a fifth sample (S5) containing different amounts of the first to third substances are prepared (S107A). In this step, the first to fifth samples (S1 to S5) can be prepared in a state suitable for mass analysis by adding a mixed solution of nitric acid and pure water (DI Water), heating and drying, and then undergoing a pretreatment process of adding pure water.

[0055] Subsequently, the signal intensity of the first to third substances contained in each of the first to fifth samples (S1 to S5) is measured using the mass spectrometer (200) (S107B). The signal intensity of each substance may be indicated by light of different wavelength bands unique to each substance.

[0056] Subsequently, based on the known amount of substance for each sample in the sample preparation step (S107A) and the signal intensity value measured in the signal intensity measurement step (S107B), a first linear relationship between signal intensity and amount of substance can be derived for each of the first to third substances.

[0057] Referring to FIGS. 5a to 5c together, the first substance (Ag) contained in the first to fifth samples (S1 to S5) has a wavelength of 328.068 cm -1The signal intensity value appears in the above. At this time, the relationship between the amount of substance M1 of the first substance (Ag) and the signal intensity value I1 in each of the first to fifth samples (S1 to S5) can be expressed as shown in the graph of FIG. 5a, and thereby the first linear relationship between the two variables (M1=I1*p1, where p1 is the proportionality coefficient between the signal intensity and the amount of substance of the first substance) can be derived.

[0058] Meanwhile, the second substance (Mg) included in the first to fifth samples (S1 to S5) has a wavelength of 285.213 cm -1 The signal intensity value appears in the above. At this time, the relationship between the amount of the second substance (Mg) M2 and the signal intensity value I2 in each of the first to fifth samples (S1 to S5) can be expressed as shown in the graph of FIG. 5b, and thereby the first-second linear relationship between the two variables (M2=I2*p2, where p2 is the proportionality coefficient between the signal intensity and the amount of the second substance) can be derived.

[0059] The third substance (Yb) contained in the above first to fifth samples (S1 to S5) has a wavelength of 328.937 cm -1 The signal intensity value appears in the graph. At this time, the relationship between the amount of the third substance (Yb) M3 and the signal intensity value I3 in each of the first to fifth samples (S1 to S5) can be expressed as shown in the graph of FIG. 5c, and thereby the first-third linear relationship between the two variables (M3 = I3 * p3, where p3 is the proportionality coefficient between the signal intensity and the amount of the third substance) can be derived.

[0060] For convenience of explanation, the above-mentioned linear relationships 1-1, 1-2, and 1-3 (M1=I1*p1, M2=I2*p2, M3=I3*p3) will be collectively referred to as the first linear relationship M=I*p (where p is the proportionality constant between the signal intensity and the amount of substance).

[0061] When the first linear relationship is derived (S107), the amounts of the first to third substances M1, M2, and M3 contained in the sample (SP) can be calculated using the signal intensity value I of the first to third substances measured prior to this and the first linear relationship M=I*p (S109). Additionally, based on the amounts of the first to third substances, the material composition ratio M1:M2:M3 of the sample (SP) can be calculated (S111). The material composition ratio is an elemental concentration ratio, and the material composition ratio can also be converted into a mass concentration ratio using the molecular weight of each substance.

[0062] Meanwhile, in order to convert the amount of material of the sample (SP) into a layer thickness or to convert the material composition ratio into a thickness ratio, a step of deriving a second linear relationship T=M*q (where q is a proportionality constant for the amount of material and thickness value) between the amount of material M of the first to third materials and the layer thickness T is required (S113). That is, a second-1 linear relationship T1=M1*q1 (where q1 is a proportionality constant for the amount of material and thickness value in the first material) between the amount of material M1 of the first material and the layer thickness T1, a second-2 linear relationship T2=M2*q2 (where q2 is a proportionality constant for the amount of material and thickness value in the second material) between the amount of material M2 of the second material and the layer thickness T2, and a second-3 linear relationship T3=M3*q3 (where q3 is a proportionality constant for the amount of material and thickness value in the third material) between the amount of material M3 of the third material and the layer thickness T3 can be derived.

[0063] FIG. 6 is a flowchart sequentially showing each step of deriving the second-third linear relationship T3=M3*q3 for a third material in order to explain in more detail the step (S113) of deriving the second linear relationship between the amount of material and the layer thickness in the thin film thickness measurement method (M100) of FIG. 1. FIG. 7 is a graph obtained by the step (S113B) of measuring the total thickness of a plurality of samples (S1 to S8) in the step (S113) of deriving the second linear relationship for a third material. FIG. 8 is a graph obtained by the step (S113C) of measuring the signal intensity of the material included in the measurement target layer of a plurality of samples (K1 to K8) in the step (S113) of deriving the second linear relationship of FIG. 6.

[0064] Referring to FIG. 6, first, a plurality of samples such as a first sample (K1), a second sample (K2), a third sample (K3), a fourth sample (K4), a fifth sample (K5), a sixth sample (K6), a seventh sample (K7), and an eighth sample (K8) can be prepared, wherein the thickness of the reference layer containing the first and second materials is the same, and the thickness of the measurement target layer containing different amounts of the third material is different (S113A). At this time, the different amounts or different thicknesses of the measurement target layer can be roughly controlled by the amount of material input during the formation process of the measurement target layer. The first sample (K1) may be a sample that does not contain the measurement target layer, and the second to eighth samples (K2 to K8) may be samples in which the amount of material and the thickness of the measurement target layer are changed by a constant increase.

[0065] Subsequently, the total thickness value of each of the first to eighth samples (K1 to K8) is measured using the thickness measuring unit (100) (S113B). Referring to FIG. 7, the total thickness value of the first sample (K1) is shown to increase from approximately 70 Å to approximately 100 Å for the eighth sample (K8). That is, the measurement target layer has a split thickness ranging from 0 Å to approximately 30 Å in each of the first to eighth samples (K1 to K8).

[0066] Using the mass spectrometer (300), the signal intensity I3 of the third substance contained in each of the first to eighth samples (K1 to K8) is measured (S113C). Referring together with FIG. 8, signal intensity values ​​that increase by a constant amount can be measured for each of the first to eighth samples (K1 to K8) with a split thickness from 0 Å to about 30 Å. Accordingly, a linear relationship between the thickness value T3 of the measurement target layer of the first to eighth samples (K1 to K8) and the signal intensity value I3 can be derived as T3=I3*k (where k is a proportionality constant between the signal intensity value and the thickness value in the third substance).

[0067] Furthermore, since the signal intensity value I3 can be expressed as a substance amount value M3 using the first linear relationship M3=I3*p3 described above, a second-third linear relationship T3=M3*q3 between the thickness value T3 of the third substance and the substance amount value M3 can be derived (S113D).

[0068] Similarly, through a similar process, a second-first linear relationship T1=M1*q1 between the thickness value T1 of the first material and the amount of substance value M1, and a second-second linear relationship T2=M2*q2 between the thickness value T2 of the second material and the amount of substance value M2 can be derived. That is, after preparing multiple samples of a reference layer containing different amounts or different thicknesses while having the same thickness of the layer to be measured, the second-first and second-second linear relationships between the thickness value and the amount of substance for the first and second materials of the reference layer can be derived based on the total thickness value, the signal intensity value of the reference layer, and the amount of substance value.

[0069] Referring again to FIG. 1, after measuring the signal intensity I for the first to third substances contained in the sample (SP) (S105), the substance amount values ​​M1, M2, M3 or the substance composition ratio M1:M2:M3 of the first to third substances are calculated using the first linear relationship M=I*p between the signal intensity I and the substance amount M (S109), and the thickness values ​​T1, T2, T3 and / or the thickness ratio T1:T2:T3 of the first to third substances can be obtained using the second linear relationship T=M*q between the substance amount M and the thickness value T. In this way, the thickness values ​​T1, T2, T3 of the first to third substances can be directly calculated through the second linear relationship, but when a sample (SP) with a large surface area is the subject of measurement, there is a practical benefit in eliminating errors caused by the surface area by using the thickness ratio T1:T2:T3. Accordingly, the thickness of each layer can be calculated using the total thickness value (Tsp) of the sample (SP) and the thickness ratio T1:T2:T3 (S117).

[0070] Alternatively, a method can be used to directly derive the thickness value through the following relationships (1) to (3) using the signal intensity values ​​and proportionality constants of the first to third materials.

[0071] T1=M1*q1=I1*p1*q1 - (1)

[0072] T2=M2*q2=I2*p2*q2 - (2)

[0073] T3=M3*q3=I3*p3*q3 - (3)

[0074] Alternatively, if the material composition ratio r1:r2:r3 of the first to third materials of the sample (SP) is known, a method can be used to derive the thickness value of each layer using the proportionality constant and the total thickness value Tsp. That is, the thickness ratio of the first to third materials can be expressed as the following relationship (4).

[0075] T1:T2:T3 = r1*q1:r2*q2:r3*q3 - (4)

[0076] Accordingly, the thickness values ​​of the first to third materials can be converted together with respect to the total thickness value T as shown in the following relationship equations (5) to (7).

[0078] - (5)

[0080] - (6)

[0082] - (7)

[0083] Such a calculation process can be performed by the aforementioned calculation unit (400). That is, the calculation unit (400) may include a first calculation unit that calculates and stores a first linear relationship equation representing a linear relationship between the amount of material and signal strength of the material included in the sample (SP), and a second linear relationship equation representing a linear relationship between the amount of material and layer thickness of the material; and a second calculation unit that calculates the material composition ratio of the sample using the first linear relationship equation and the signal strength value of the material included in the sample, calculates the thickness ratio of the thin film layers forming the sample using the material composition ratio and the second linear relationship equation, and calculates the thickness of each of the first and second layers using the total thickness value and the thickness ratio.

[0084] As described above, according to the technical concept of the present invention, the thickness of an individual thin film layer contained in a sample (SP) can be calculated based on quantitative values ​​of a material, such as signal intensity, amount of material, and / or composition ratio of the material contained in the sample (SP), the total thickness value of the sample (SP), and a linear relationship or proportionality coefficient between the aforementioned variables. According to the technical concept of the present invention, the process of calculating the thickness of the thin film layer using the aforementioned variables is not limited to the examples described above and extends to various arithmetic steps that can be modified by a person skilled in the art.

[0085] In addition, although the method for measuring the thickness of the thin film (M100) is illustrated in FIGS. 1 to 8 as being performed using the thickness measuring device (10), the technical concept of the present invention is not limited thereto. The method for measuring the thickness of the thin film (M100) can be performed using the thickness measuring device (20, 30, 40) described later, and individual steps of the method for measuring the thickness of the thin film (M100) can be performed individually through various means.

[0086] Likewise, although the thickness measuring device (10) of FIG. 2 is described as performing the thickness measuring method (M100) of the thin film, the technical concept of the present invention is not limited thereto. The thickness measuring device (10) can perform various thickness measuring methods using the thickness measuring unit (100), mass analysis unit (200), transport stage (300), and analysis unit (400) included in the device.

[0087] FIG. 9 is a diagram illustrating a sample (SP2) including a measurement target layer that can utilize the thin film thickness measurement method (M100) and thickness measurement device (10) of FIG. 1. FIG. 10a and FIG. 10b are graphs showing a first linear relationship and the linear relationship applied to the sample (SP2) of FIG. 9.

[0088] Referring to FIG. 9, the thin film thickness measurement method (M100) and thickness measurement device (10, 15) according to the technical concept of the present invention can be applied to a sample including a host and a dopant (DM) doped within the host, for example, when measuring a dopant layer within a light-emitting device structure.

[0089] Specifically, the sample (SP2) comprises an anode (And) and a cathode (Ctd), and a component included between them.

[0090] The structure may be a stacked electron injection layer (EIL), electron transport layer (ETL), light emitting layer (EML1 and EML2), hole injection layer (HIL), and hole transport layer (HTL).

[0091] At this time, the light-emitting layers (EML1, EML2) may include a first light-emitting layer (EML1) and a second light-emitting layer (EML2) having different types of dopants and doping concentrations, and accordingly, the light-emitting colors of each light-emitting layer may be different. For example, the first light-emitting layer (EML1) may be a red light-emitting layer containing a first dopant at a first concentration, and the second light-emitting layer (EML2) may be a green light-emitting layer containing a second dopant at a second concentration. The dopant may be an organic material with a structure containing a metal element within a ligand. The dopant may be Ir(PPy)3, ​​Ir(BQ)3, Ir(ThPy)3, ​​Ir(BO)3, Ir(BT)3, Ir(BTPy)3, ​​Ir(BQ)2acac, and Ir(ThPy)2acac, but is not limited thereto.

[0092] Meanwhile, since the first and second light-emitting layers (EML1, EML2) have a structure in which a small amount of dopant (DM) is doped within the host, the thickness of the dopant layer may be less than the measurement limit of the thickness measuring unit (100). Accordingly, the thickness of each of the first and second light-emitting layers (EML1, EML2) can be measured using the aforementioned thin film thickness measuring method (M100). Since the dopant (DM) has a structure of a metal element core (M) and a ligand (L) bonded thereto, the amount of material of the dopant (DM) itself can be obtained indirectly by measuring the signal intensity of the metal element core (M). Accordingly, the thickness due to the dopant (DM) in the sample (SP2) can be obtained.

[0093] As described above in FIGS. 1 to 8, the method can be performed by taking the steps of measuring signal intensity for the first and second light-emitting layers (EML1, EML2) and other layers (And, Ctd, ETL, EIL, HTL, HIL) included in the sample (SP2) (S105), deriving a first linear relationship between signal intensity and amount of material (S107), and using the same to obtain the amount of material and / or material composition ratio of the first and second light-emitting layers (EML1, EML2) and other layers (And, Ctd, ETL, EIL, HTL, HIL) (S109, S111), deriving a second linear relationship between the amount of material and thickness value (S113), and using the same to obtain the thickness ratio and / or thickness value of the first and second light-emitting layers (EML1, EML2) and other layers (And, Ctd, ETL, EIL, HTL, HIL) (S115, S117).

[0094] Referring to FIG. 10a and FIG. 10b together, a graph showing a first linear relationship for each of the first and second light-emitting layers (EML1, EML2) is illustrated. FIG. 10a is a graph showing signal intensity values ​​according to the doping concentration of the first light-emitting layer (EML1) using first to fifth samples (G1 to G5) having different doping concentrations, and a first linear relationship between the doping concentration and the signal intensity value can be derived. The first to fifth samples (G1 to G5) have a first doping concentration of the first doping agent ranging from about 1.0% to about 3.0%. FIG. 10b is a graph showing signal intensity values ​​according to the doping concentration of the second light-emitting layer (EML2) using first to fifth samples (H1 to H5) having different doping concentrations, and a first linear relationship between the doping concentration and the signal intensity value can be derived. The first to fifth samples (H1 to H5) have a second doping concentration of the second dopant ranging from about 3.0% to about 7.0%.

[0095] FIG. 11 is a drawing showing a thin film thickness measuring device (20) according to an embodiment of the technical concept of the present invention. The thin film thickness measuring device (20) is similar to the thickness measuring device (10) of FIG. 2, but differs in the structure of the thickness measuring unit (500). Reference numerals identical to those in FIG. 2 indicate identical components, and a detailed description thereof is omitted.

[0096] Referring to FIG. 11, the light source (501) of the thickness measuring unit (500) may be structured to be incident perpendicularly on the incident plane of the sample (SP). Light emitted from the light source (501) may be polarized while passing through the light source unit module (103), and then incident on the sample (SP) after passing through the light splitter (509) and the objective lens (511). The reflected light reflected from the surface of the sample (SP) may be collected by the light receiving unit module (505) after the polarization state is changed according to the optical characteristics of the sample (SP), and may be detected as a signal intensity by the light detector (507). By analyzing the signal of the reflected light, the elliptical measurement angles ψ and Δ are obtained, and based on this, physical quantities such as the thickness of the sample (SP) can be extracted.

[0097] Subsequently, the amount of substance and / or the ratio of substance composition of the sample (SP) can be measured by the mass spectrometer (200). Each value measured by the thickness measuring unit (100) and the mass spectrometer (200) is transmitted to the calculation unit (400), and the calculation unit (400) can calculate the thickness value of the measurement target layer of the sample (SP) using the total thickness value of the measured sample (SP), the amount of substance and / or the ratio of substance composition of the sample (SP), and the proportionality coefficient between variables.

[0098] FIG. 12 is a flowchart sequentially showing each step of a thin film thickness measurement method (M200) according to an embodiment of the technical concept of the present invention. The thin film thickness measurement method (M200) is similar to the thickness measurement method (M100) of FIG. 1, but differs in the type of sample (SP3) to be measured. Accordingly, the thickness measurement device (30) used in the thickness measurement method (M200) may be different from the thickness measurement device (10, 15, 20) used in the thickness measurement method (M100) of FIG. 1.

[0099] FIG. 13 is a drawing showing a thin film thickness measuring device (30) according to an embodiment of the technical concept of the present invention. The thin film thickness measuring device (30) is similar to the thickness measuring device (10) of FIG. 2, but differs in the structure of the mass analysis unit (600). Reference numerals identical to those in FIG. 2 indicate identical components, and a detailed description thereof is omitted.

[0100] FIG. 14 is a drawing illustrating a sample (SP3) including a measurement target layer that can utilize the thin film thickness measurement method (M200) of FIG. 12 and the thickness measurement device (30) of FIG. 13.

[0101] Referring to FIGS. 12 to 14, the method (M200) for measuring the thickness of a thin film and the thickness measuring device (30) according to the technical concept of the present invention may target an organic layer. For example, the measurement target of the method (M200) for measuring the thickness of a thin film may be a sample (SP3) containing a host (HM) and a dopant (DM) of an organic material doped therein, and the thickness (T5) of only the undoped portion and the thickness (T6) of the dopant (DM) may be measured.

[0102] Meanwhile, the mass analysis unit (600) of the thin film thickness measuring device (30) may be a device that utilizes a mass analysis technique based on Raman spectroscopy. Specifically, the mass analysis unit (600) irradiates a sample (SP3) with a laser output from a light source (601) through an objective lens (603), selects only the component corresponding to the Raman shift among the light scattered from the sample (SP3) using a filter (607), and obtains the spectrum using a spectroscopic unit (611). That is, among the components of the light scattered by the filter (607), only the component whose wavelength has changed can be selectively displayed in the form of a spectrum. The peak component appearing in the spectrum appears uniquely depending on each material, allowing for the interpretation of the type of material contained in the sample (SP3). In addition, the magnitude of the peak component indicates signal intensity, which can indicate the concentration of the material. The mass spectrometer (600) may include an objective lens (603), a light splitter (605), and a focusing lens (609) for the purpose of focusing and splitting light, etc., for the type of substance contained in the sample (SP3).

[0103] The method (M200) for measuring the thickness of a thin film using the above-described thickness measuring device (30) is as follows. First, a sample (SP3) containing a host (HM) and a dopant (DM) of an organic material doped therein is prepared (S201), and the total thickness value (T) of the sample (SP3) is measured using the thickness measuring unit (100). SP3 ) is measured (S203). Afterwards, the signal intensity for the host (HM) and the dopant (DM) is measured (S205), and a first linear relationship between the signal intensity and the amount of substance is derived (S207). Accordingly, the amount of substance and / or the material composition ratio of the sample (SP3) can be obtained using the first linear relationship (S209, S211). Afterwards, a second linear relationship between the amount of substance and the thickness value is derived (S213), and the thickness ratio and / or the thickness value of the host (HM) and dopant (DM) layers can be obtained using this (S215, S217).

[0104] FIG. 15 is a graph showing the Raman shift and signal intensity for the dopant concentration being measured by the mass spectrometer (600). FIG. 16 is a graph showing the first linear relationship between the dopant concentration and signal intensity applied to the sample (SP3) of FIG. 14 and the linear relationship thereof.

[0105] In FIGS. 12 and 13, the method for measuring the thickness of the thin film (M200) is illustrated as being performed using the thickness measuring device (30), but the technical concept of the present invention is not limited thereto. The individual steps of the method for measuring the thickness of the thin film (M200) can be performed individually through various means.

[0106] Likewise, although the thickness measuring device (30) of FIG. 2 is described as performing the thickness measuring method (M200) of the thin film, the technical concept of the present invention is not limited thereto. The thickness measuring device (30) can perform various thickness measuring methods using the thickness measuring unit (100), mass analysis unit (600), transport stage (300), and analysis unit (400) included in the device.

[0107] FIG. 17 is a drawing showing a thin film thickness measuring device (40) according to an embodiment of the technical concept of the present invention. The thin film thickness measuring device (40) is similar to the thickness measuring device (10) of FIG. 2, but differs in the structure of the mass analysis unit (700). Reference numerals identical to those in FIG. 2 indicate identical components, and a detailed description thereof is omitted.

[0108] Referring to FIG. 17, the mass analysis unit (700) of the thin film thickness measuring device (40) may be a device that utilizes a mass analysis technique by Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS). Specifically, the ion beam generator (701) strikes the surface of a sample (SP) with an ion beam having a constant energy, and accordingly, the light emitted from the sample (SP) material is extracted through a light detector (709) to measure the type of material and its signal intensity. To focus the ion beam or to easily collect the light generated from the sample (SP), a focusing lens (703, 705) may be included.

[0109] The thickness measuring device (40) of FIG. 17 can perform the thickness measuring method (M100, M200) of the thin film of FIG. 1 and FIG. 12, but the technical concept of the present invention is not limited thereto. The thickness measuring device (40) can perform various thickness measuring methods using the thickness measuring unit (100), mass analysis unit (700), transport stage (300), and analysis unit (400) included in the device.

[0110] FIG. 18 is a drawing showing a thin film thickness measuring device (50) according to an embodiment of the technical concept of the present invention. The thin film thickness measuring device (50) is similar to the thickness measuring device (10) of FIG. 2, but differs in the structure of the mass analysis unit (800). Reference numerals identical to those in FIG. 2 indicate identical components, and a detailed description thereof is omitted.

[0111] Referring to FIG. 18, the mass analysis unit (800) of the thin film thickness measuring device (50) is a device that performs mass analysis by Laser Induced Breakdown Spectroscopy (LIBS) and can be operated according to the principle of analyzing the spectrum of plasma induced by a laser. Specifically, a high-power laser generated from a light source (801) is irradiated onto a sample (SP) through a beam splitter (803) and an objective lens (805). At this time, the laser induces plasma ablation in the sample (SP), and accordingly, plasma can be formed within the chamber (807).

[0112] The light collection unit (813) collects light resulting from the plasma emission of the sample (SP) and transmits it to the spectroscopic unit (815), and the spectroscopic unit (815) and the light detection unit (817) spectroscopically analyze the collected light and output spectral data of the material constituting the sample (SP). The spectral data may be data regarding signal intensity measured by wavelength.

[0113] Meanwhile, the mass spectrometer (800) of the thin film thickness measuring device (50) may measure a sample (SP) containing a metal material. For example, the sample (SP) may have a structure in which a plurality of metal materials form a stacked structure. However, the technical concept of the present invention is not limited thereto, and it may be used when the sample (SP) has a structure including a host and a dopant doped within the host. That is, as described above with reference to FIG. 9, when the dopant is a ligand containing a metal element core, the amount of the dopant itself can be obtained indirectly by measuring the signal intensity by the metal element core inside the ligand. Accordingly, even when the dopant is distributed in trace amounts in the sample (SP), the thickness of the layer in which the dopant is formed can be measured.

[0114] FIGS. 19a and FIGS. 19b are drawings for explaining the resolution of the thickness measuring device (50) of FIG. 18.

[0115] Referring to FIG. 19a and FIG. 19b together, the graphs show the signal intensities of three types of samples (V1, V2, V3) measured using the thickness measuring device (50), wherein the three types of samples (V1, V2, V3) have different amounts or different thicknesses of the material of the layer to be measured and the material of the remaining layer has the same amount and thickness.

[0116] The thickness measuring device (50) measures first to third signal intensity values ​​(I01, I02, I3) for the measurement target layer material of three types of samples (V1, V2, V3), respectively, and these can be converted into layer thicknesses of 8 Å, 10 Å, and 13 Å, respectively, according to the thickness measuring method (M100, M200) according to the technical concept of the present invention. Accordingly, with the thickness measuring device (50), not only can the thickness of a layer having a thickness of about 13 Å or less, which is referred to as the measurement limit of the thickness measuring unit (100), be converted, but high-quality thickness analysis can also be performed to distinguish a thickness difference of about 2 Å between samples having different thicknesses.

[0117] FIG. 20 is a graph showing the state in which the signal intensity of a plurality of materials, for example, first to third materials (Mt1, Mt2, Mt3), included in the sample (SP) of FIG. 18 is simultaneously measured by the thickness measuring device (50) of FIG. 18.

[0118] Referring to FIG. 18 and FIG. 20 together, the spectrum data obtained by the thickness measuring device (50) can simultaneously display multiple peaks induced by the first to third materials (Mt1, Mt2, Mt3). The multiple peaks can be displayed in the spectrum data as the first to third materials (Mt1, Mt2, Mt3) emit light having a unique wavelength. Therefore, by extracting the wavelengths in which the multiple peaks appear and associating each peak with the first to third materials (Mt1, Mt2, Mt3) that induce each peak, there is a practical benefit in simultaneously extracting signal intensity values ​​for the first to third materials (Mt1, Mt2, Mt3). Subsequently, the thickness of the material layers contained in the sample (SP) can be calculated according to the remaining steps of the aforementioned thickness measuring method (M100, M200).

[0119] Although embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention. Explanation of the symbols

[0120] M100, M200: Thin film thickness measurement method 10, 15, 20, 30, 40, 50: Thin film thickness measuring device 100, 500: Thickness measuring section 200, 600, 700, 800: Mass Spectrometer 300: Transport stage 350: Moving part 400: Operation unit

Claims

Claim 1 The method comprises the steps of: measuring the total thickness of a sample having first and second layers stacked thereon; measuring the signal intensity values ​​of first and second materials respectively contained in the first and second layers using a mass spectrometer; deriving a first linear relationship equation using the mass spectrometer that represents a linear relationship between the amount of the first material and the signal intensity and a linear relationship between the amount of the second material and the signal intensity; calculating the amounts of the first and second materials respectively using the first linear relationship equation and the signal intensity values ​​of the first and second materials contained in the sample, and obtaining the material composition ratio of the sample; deriving a second linear relationship equation that represents a linear relationship between the amount of the first material and the layer thickness and a linear relationship between the amount of the second material and the layer thickness; obtaining the thickness ratio of the first and second layers using the material composition ratio and the second linear relationship equation; and calculating the thickness of each of the first and second layers using the total thickness and the thickness ratio, wherein the step of deriving the first linear relationship equation comprises a plurality of the first and second materials containing different amounts of each other. A method for measuring the thickness of a thin film, comprising the steps of: preparing samples; measuring the signal intensity of a first and second substance contained in a plurality of samples using the mass spectrometer; and calculating the linear relationship between the amount of the first substance and the signal intensity and the linear relationship between the amount of the second substance and the signal intensity. Claim 2 A method for measuring the thickness of a thin film according to claim 1, wherein the step of measuring the total thickness of the sample is performed by a thickness measuring instrument, and the sample to be measured is a thin film in which at least one of the first and second layers is less than or equal to the measurement limit of the thickness measuring instrument. Claim 3 delete Claim 4 A method for measuring the thickness of a thin film according to claim 1, wherein, in the step of obtaining the material composition ratio of the sample, the material composition ratio is the element concentration ratio. Claim 5 A method for measuring the thickness of a thin film according to claim 1, wherein the step of obtaining the material composition ratio of the sample further includes the step of multiplying the material composition ratio by the molecular weight of each of the first and second materials, and wherein the material composition ratio is a mass concentration ratio. Claim 6 A method for measuring the thickness of a thin film according to claim 1, wherein the step of deriving the second linear relationship equation comprises: preparing a first plurality of first samples in which the thickness of the second layer is the same and the thickness of the first layer is different; measuring the total thickness of each of the first plurality of samples; measuring the signal intensity of a first substance contained in each of the first plurality of samples and converting it into a substance amount using the first linear relationship equation; calculating a second-1 linear relationship equation between the layer thickness of the first substance and the substance amount; preparing a second plurality of samples in which the thickness of the first layer is the same and the thickness of the second layer is different; measuring the total thickness of each of the second plurality of samples; measuring the signal intensity of a second substance contained in each of the second plurality of samples and converting it into a substance amount using the first linear relationship equation; and calculating a second-2 linear relationship equation between the layer thickness of the second substance and the substance amount. Claim 7 A method for measuring the thickness of a thin film according to claim 1, wherein the first layer of the sample to be measured by the method for measuring the thickness of the thin film is a host layer in which no dopant is present, and the second layer is a dopant layer doped in the host. Claim 8 In claim 7, the dopant has a structure comprising a metal element and a ligand bonded thereto, and the step of measuring the signal intensity values ​​of the first and second materials is a method for measuring the thickness of a thin film, wherein the signal intensity value of the second material is measured for the metal element. Claim 9 In claim 1, the first and second layers of the sample to be subject to the thin film thickness measurement method are each made of different materials, and the first and second layers are each one of a single metal material, an alloy containing multiple metal materials, or an organic material. Claim 10 A method for measuring the thickness of a thin film according to claim 1, wherein the step of measuring the total thickness of the sample is performed by utilizing a change in the polarization state of light incident on the sample that is reflected from the sample. Claim 11 A method for measuring the thickness of a thin film according to claim 1, wherein the signal intensity is measured by at least one of Inductively Coupled Plasma-Mass Spectrometry (ICP-MS), Raman Spectroscopy, Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS), and Laser Induced Breakdown Spectroscopy (LIBS). Claim 12 A method for measuring the thickness of a thin film according to claim 1, wherein the mass spectrometer utilizes a method of irradiating a sample with a laser, and the step of measuring the signal intensity values ​​of the first and second materials comprises: a step of performing plasma ablation on the sample using the mass spectrometer; and a step of simultaneously outputting spectral data for the first and second materials by light emitted from the plasma of the first and second materials. Claim 13 A thin film thickness measuring device comprising: a thickness measuring unit disposed on a sample stage for measuring the total thickness value of a sample; a mass spectrometer disposed on the sample stage for quantitatively measuring substances included in the sample to measure signal intensity values; and a calculation unit that receives the total thickness value and the signal intensity value obtained from the thickness measuring unit and the mass spectrometer and calculates the thickness of each of a plurality of thin film layers included in the sample, wherein the calculation unit comprises: a first calculation unit that calculates and stores a first linear relationship equation representing a linear relationship between the amount of substance included in the sample and the signal intensity, and a second linear relationship equation representing a linear relationship between the amount of substance and the layer thickness; and a second calculation unit that calculates the material composition ratio of the sample using the first linear relationship equation and the signal intensity value of the substance included in the sample, calculates the thickness ratio of the thin film layers forming the sample using the material composition ratio and the second linear relationship equation, and calculates the thickness of each of the first and second layers using the total thickness value and the thickness ratio. Claim 14 delete Claim 15 In claim 13, the thin film thickness measuring device further comprises a transport stage on which the sample stage is placed, and the transport stage moves to a first position mode in which the sample stage is placed within the thickness measuring unit, or a second position mode in which the sample stage is placed within the mass analysis unit. Claim 16 In claim 13, the thin film thickness measuring device further comprises a moving member connected to the thickness measuring unit and the mass analysis unit to place either the thickness measuring unit or the mass analysis unit on the sample stage. Claim 17 In claim 13, the thickness measuring unit is a thin film thickness measuring device that utilizes a change in the polarization state of light incident on the sample that is reflected from the sample. Claim 18 In claim 13, the mass spectrometer is a thin film thickness measuring device that is any one of Inductively Coupled Plasma-Mass Spectrometry (ICP-MS), Raman Spectroscopy, Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS), and Laser Induced Decay Spectroscopy. Claim 19 A method for measuring the thickness of a thin film, comprising the steps of: measuring the total thickness value of a sample containing multiple materials; deriving the material composition ratio of the multiple materials; deriving a linear relationship between the amount of material and the layer thickness for each of the multiple materials; obtaining a thickness ratio of the multiple materials using the material composition ratio and the linear relationship; and calculating the thickness of each of the multiple materials using the total thickness value and the thickness ratio. The step of deriving the linear relationship between the amount of material and the layer thickness comprises: preparing multiple samples in which only the amount of material for one specific material among the multiple materials is varied; measuring the total thickness of each of the multiple samples; deriving a linear relationship equation between the layer thickness of the specific material and the amount of material; and for each of the multiple materials, repeating the steps of preparing the multiple samples, measuring the total thickness, and deriving the linear relationship equation to derive a linear relationship equation between the layer thickness and the amount of material of each of the multiple materials. Claim 20 delete

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