Plasma treatment method and plasma treatment apparatus

Abstract

A plasma treatment method and a plasma treatment device for detecting moisture are provided. A plasma treatment method for performing a predetermined plasma treatment within a treatment chamber, wherein the plasma treatment comprises: a process of setting a threshold for determining the amount of moisture contained within the treatment chamber based on the first luminescence intensity obtained by performing a plasma treatment a predetermined number of times; a process of determining the amount of moisture based on the second luminescence intensity in a plasma treatment subsequent to the predetermined number of times; and a process of determining the amount of moisture based on the threshold. The process of setting the threshold comprises: (a) a process of exciting a plasma of a treatment gas within the treatment chamber; (b) a step of obtaining the first luminescence intensity by receiving light in a specific wavelength region of the luminescence spectrum of the plasma that is correlated with the amount of moisture within the treatment chamber; (c) a process of recording the value of the first luminescence intensity; (d) a step of calculating the threshold from the first luminescence intensity of the predetermined number of times; and (e) a process of recording the threshold.

Description

Technology Field

[0001] The present disclosure relates to a plasma treatment method and a plasma treatment apparatus. Background Technology

[0002] Patent Document 1 discloses a plasma treatment method for performing a predetermined plasma treatment in a treatment chamber, wherein the plasma treatment is characterized by having a step of depressurizing the treatment chamber, introducing a predetermined gas while exhausting the treatment chamber, and exciting the plasma of the gas, and a step of receiving light in a specific wavelength region corresponding to the amount of moisture in the treatment chamber among the emission spectra of the plasma transmitted through a window portion for a monitor provided in the treatment chamber, and obtaining an emission intensity. Prior art literature

[0003] Japanese Patent Publication No. 2010-147052 The problem to be solved

[0004] In one aspect, the present disclosure provides a plasma treatment method and a plasma treatment apparatus for detecting moisture. means of solving the problem

[0005] To solve the above problem, according to one embodiment, a plasma treatment method is provided for performing a predetermined plasma treatment in a treatment chamber, wherein the plasma treatment comprises a step of setting a threshold for determining the amount of moisture contained in the treatment chamber based on the first luminescence intensity obtained by performing plasma treatment a predetermined number of times, and a step of determining the amount of moisture based on the second luminescence intensity in plasma treatment after the predetermined number of times, and the step of determining the amount of moisture based on the threshold. The step of setting the threshold comprises: (a) a step of exciting a plasma of a treatment gas in the treatment chamber; (b) a step of obtaining the first luminescence intensity by receiving light in a specific wavelength region of the luminescence spectrum of the plasma that is correlated with the amount of moisture in the treatment chamber; (c) a step of recording the value of the first luminescence intensity; (d) a step of calculating the threshold from the first luminescence intensity of the predetermined number of times; and (e) a step of recording the threshold. Effects of the invention

[0006] According to one aspect, a plasma treatment method and a plasma treatment device for detecting moisture can be provided. Brief explanation of the drawing

[0007] FIG. 1 is a cross-sectional view illustrating an example of a first plasma processing device. FIG. 2 is a cross-sectional view illustrating an example of a second plasma processing device. Figure 3 is a graph illustrating an example of a plasma emission spectrum. Figure 4 is a graph illustrating an example of a plasma emission spectrum. Figure 5 is a graph illustrating an example of a plasma emission spectrum. Figure 6 is a graph illustrating an example of a plasma emission spectrum. Figure 7 is a graph illustrating an example of a plasma emission spectrum. FIG. 8 is a flowchart illustrating an example of the processing of a plasma processing device. FIG. 9 is a flowchart illustrating an example of the processing of a plasma processing device. FIG. 10 is a flowchart illustrating an example of processing in a plasma processing device. FIG. 11 is a drawing illustrating an example of the moisture content of a substrate. Specific details for implementing the invention

[0008] Hereinafter, embodiments for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant descriptions may be omitted.

[0009] [First Plasma Treatment Device]

[0010] A first plasma processing device (100) (substrate processing system) will be described using FIG. 1. FIG. 1 is a cross-sectional view illustrating an example of a first plasma processing device (100).

[0011] The plasma processing apparatus (100) illustrated in FIG. 1 is an inductively coupled plasma (ICP) processing apparatus that performs various substrate processing methods on a substrate G (hereinafter simply referred to as "substrate") which is rectangular when viewed from a planar perspective for a flat panel display (hereinafter referred to as "FPD"). As the material for the substrate, glass is mainly used, and depending on the application, transparent synthetic resins may also be used. Here, substrate processing includes film deposition treatment using the CVD (Chemical Vapor Deposition) method or etching treatment. Examples of FPDs include liquid crystal displays (LCD), electroluminescence (EL), and plasma display panels (PDP). The substrate includes a support substrate in addition to a form in which a circuit is patterned on its surface. In addition, the planar dimensions of the substrate for the FPD have been scaled up with the progression of generations, and the planar dimensions of the substrate G processed by the plasma processing device (100) include, for example, dimensions of about 1500 mm × 1800 mm of the 6th generation up to dimensions of about 3000 mm × 3400 mm of the 10.5th generation. In addition, the thickness of the substrate G is about 0.2 mm to several mm.

[0012] The plasma processing device (100) illustrated in FIG. 1 has a processing container (10) having a rectangular box shape, a substrate loading stand (60) disposed within the processing container (10) and having a rectangular outer shape when viewed from the plane on which a substrate G is loaded, and a control unit (90). Additionally, the processing container (10) may have a cylindrical box shape or an elliptical box shape, and in this form, the substrate loading stand (60) may also be circular or elliptical, and the substrate loaded on the substrate loading stand (60) may also be circular, etc.

[0013] The processing vessel (10) is divided into two upper and lower spaces by a metal window (11), the upper space, antenna room A, is formed by the upper chamber (12), and the lower space, processing room S, is formed by the lower chamber (13). In the processing vessel (10), a rectangular ring-shaped support frame (14) is positioned at the boundary between the upper chamber (12) and the lower chamber (13) so as to protrude into the inside of the processing vessel (10), and a metal window (11) is installed on the support frame (14).

[0014] The upper chamber (12) forming the antenna chamber A is formed entirely of a metal such as aluminum or an aluminum alloy. The lower chamber (13) having the processing chamber S inside is formed entirely of a metal such as aluminum or an aluminum alloy. Additionally, the processing vessel (10) is grounded by a ground wire (13e).

[0015] The support frame (14) is formed of a conductive metal such as aluminum or an aluminum alloy and may be called a metal frame.

[0016] A rectangular ring-shaped (undefined) seal groove is formed at the top of the side wall (13a) of the lower chamber (13), and a seal member (15), such as an O-ring, is inserted into the seal groove, and the seal member (15) is supported by the contact surface of the support frame (14), thereby forming a seal structure between the lower chamber (13) and the support frame (14).

[0017] On the side wall (13a) of the lower chamber (13), an inlet / outlet port (not shown) for transporting substrate G into and out of the lower chamber (13) is provided, and the inlet / outlet port is configured to be openable and closable by a gate valve (not shown). A transport chamber (not shown) containing a transport mechanism is adjacent to the lower chamber (13), and the gate valve is controlled to open and close, and the transport mechanism transports substrate G into and out through the inlet / outlet port.

[0018] Additionally, a plurality of exhaust ports (13d) are provided on the bottom plate (13c) of the lower chamber (13). In the lower chamber (13), the side wall (13a) of the processing vessel (10) that accommodates the substrate loading platform (60) is formed in a rectangular shape. In other words, the processing vessel (10) is formed with a rectangular horizontal cross-section at least in the location of the lower chamber (13) that accommodates the substrate loading platform (60). In addition, the substrate loading platform (60) is formed in a rectangular shape when viewed from above in a flat plane. In other words, the substrate loading platform (60) is formed with a rectangular horizontal cross-section. The exhaust ports (13d) are arranged in a plurality on the bottom plate (13c) of the processing vessel (10), surrounding the substrate loading platform (60). In other words, the exhaust port (13d) is positioned outside the substrate loading platform (60) and inside the side wall (13a) of the processing container (10) (lower chamber (13)) when viewed in a planar view.

[0019] Each exhaust port (13d) is connected to an exhaust device (50). Additionally, a pressure gauge (not shown) is installed in a suitable location in the lower chamber (13), and monitoring information from the pressure gauge is transmitted to the control unit (90).

[0020] The substrate loading platform (60) has a substrate (61). Additionally, an electrostatic chuck (not shown) on which a substrate G is directly loaded may be formed on the upper surface of the substrate (61).

[0021] The shape of the substrate (61) as viewed in a planar view is rectangular and has planar dimensions similar to those of the substrate G loaded on the substrate loading platform (60). The length of the long side of the substrate (61) can be set to approximately 1800 mm to 3400 mm, and the length of the short side can be set to approximately 1500 mm to 3000 mm. For these planar dimensions, the thickness of the substrate (61) can be, for example, approximately 50 mm to 100 mm.

[0022] Additionally, the substrate (61) is provided with a heating resistor (not shown) that is shaped to cover the entire area of ​​a rectangular plane and a temperature control medium channel (not shown). Additionally, the temperature control medium channel may be provided in a temperature control plate of a separate component separated from the substrate (61). Furthermore, the heating resistor is connected to a control unit and a power supply unit (both not shown) installed outside the processing vessel (10) via a power supply line (not shown).

[0023] On the bottom plate (13c) of the lower chamber (13), a box-shaped support (62) formed by an insulating material and having a stepped portion on the inside is fixed, and a substrate loading stand (60) is loaded on the stepped portion of the support (62).

[0024] A feed line (71) is connected to the substrate of the substrate loading platform (60), and the feed line (71) is connected to a high-frequency power source (73), which is a bias power source, through a matching device (72) that performs impedance matching. By applying, for example, 3.2 MHz high-frequency power from the high-frequency power source (73) to the substrate loading platform (60), RF bias is generated, and ions generated from the high-frequency power source (44), which is a source source for plasma generation described below, are attracted to the substrate G, so that, for example, a film deposition process can be performed on the substrate G. In this way, the substrate loading platform (60) loads the substrate G and forms a bias electrode that generates RF bias. At this time, the part that becomes the ground potential inside the lower chamber (13) functions as the counter electrode of the bias electrode and forms a return circuit for high-frequency power. In addition, a metal window (11) may be configured as part of the return circuit for high-frequency power.

[0025] The metal window (11) is formed by a plurality of divided metal windows (20). The number of divided metal windows (20) forming the metal window (11) can be set to various numbers, such as 12 or 24.

[0026] The divided metal window (20) also serves as a processing gas discharge unit for discharging processing gas into the interior of the processing room S. The divided metal window (20) is formed from aluminum, aluminum alloy, stainless steel, etc., which is a metal that is non-magnetic, conductive, and also corrosion-resistant, or a metal that has undergone a corrosion-resistant surface treatment. Corrosion-resistant surface treatment is, for example, anodizing treatment or ceramic spraying. Additionally, the exposed surface of the divided metal window (20) facing the processing room S may be coated with a plasma-resistant coating by anodizing treatment or ceramic spraying. The divided metal window (20) is grounded via a grounding wire (not shown).

[0027] Each divided metal window (20) constituting the metal window (11) is suspended from the ceiling plate of the upper chamber (12) by means of a plurality of suspenders (not shown). Above each divided metal window (20), a spacer (not shown) formed by an insulating member is disposed, and a high-frequency antenna (inductively coupled antenna) (41) is disposed spaced apart from the divided metal window (20) by the spacer. The high-frequency antenna (41) contributes to the generation of plasma and is formed by arranging an antenna wire, formed of a conductive metal such as copper, into a ring shape or a vortex shape. For example, multiple ring-shaped antenna wires may be arranged. Since the high-frequency antenna (41) is placed on the upper surface of the divided metal window (20), it is suspended from the ceiling plate of the processing vessel (10) through the divided metal window (20). The high-frequency antenna (41) is placed in the antenna room A of the upper chamber (12) at the top of the processing vessel (10).

[0028] A gas diffusion groove (21) is formed in the divided metal window (20), and a through hole is provided that communicates the gas diffusion groove (21) with the upper surface. A gas inlet pipe (35) is embedded in this through hole. A plurality of gas discharge holes (22) are provided in the divided metal window (20) that communicate the gas diffusion groove (21) with the processing room S.

[0029] Each divided metal window (20) is electrically insulated from the support frame (14) or adjacent divided metal windows (20) by an insulating member (25). Here, the insulating member (25) is formed from a fluoropolymer such as PTFE (Polytetrafluoroethylene). Additionally, a ceramic cover member (not shown) covering the end surface of the insulating member (25) on the processing chamber S side may be provided. By doing so, the insulating member (25) is protected from plasma.

[0030] A feed line (42) is connected to the high-frequency antenna (41), and the feed line (42) is connected to a high-frequency power source (44) through a matching device (43) that performs impedance matching.

[0031] By applying high-frequency power of, for example, 13.56 MHz from a high-frequency power source (44) to a high-frequency antenna (41), an induced electric field is formed within the lower chamber (13). Due to this induced electric field, the processing gas supplied to the processing chamber S from the divided metal window (20) is plasmafied to generate an inductively coupled plasma, and ions in the plasma are supplied to the substrate G.

[0032] The high-frequency power source (44) is a source source for generating plasma, and the high-frequency power source (73) connected to the substrate loading platform (60) becomes a bias source that attracts the generated ions and imparts kinetic energy. In this way, plasma is generated using inductive coupling with the ion source source, and by connecting a separate bias source to the substrate loading platform (60) to control the ion energy, the generation of plasma and the control of ion energy are performed independently, thereby increasing the degree of freedom of the process.

[0033] As illustrated in FIG. 1, the gas inlet pipe (35) of each divided metal window (20) is connected to a processing gas supply source (31, 32, 33) through a gas supply pipe (34) that is hermetically connected. The processing gas supply source (31) supplies cleaning gas as a processing gas. The processing gas supply source (32) supplies seasoning gas as a processing gas. The processing gas supply source (33) supplies process gas as a processing gas and a pre-coating gas.

[0034] In plasma treatment, the treatment gas supplied from the treatment gas supply unit (30) is supplied to the gas diffusion groove (21) of each divided metal window (20) through the gas supply pipe (34) and the gas introduction pipe (35). Then, the gas is discharged from each gas diffusion groove (21) to the treatment chamber S through the gas discharge hole (22).

[0035] Thus, the plasma processing device (100) is equipped with a plasma generating unit that generates a processing plasma to perform substrate processing (film deposition, etching, etc.) on a substrate G. The plasma generating unit includes at least a metal window (11) and a high-frequency antenna (41). A high-frequency power supply (44) supplies high-frequency power to the high-frequency antenna (41), and a processing gas supply unit (30) supplies processing gas to a processing chamber S through a divided metal window (20) (processing gas discharge unit). The plasma generating unit forms an induced electric field within the processing chamber S and generates plasma of the processing gas supplied within the processing chamber S by means of this induced electric field.

[0036] The control unit (90) controls the operation of each component of the plasma processing device (100). The control unit (90) has a user interface such as an input device, such as a keyboard or mouse, for performing other command input operations, a display device, such as a display that visualizes and displays the operating status of the plasma processing device (100), and an output device, such as a printer.

[0037] In addition, the control unit (90) is connected to a memory unit (91) in which a program for realizing various processes executed in the plasma processing device (100) under the control of the control unit (90) or recipe data required to execute the program is stored.

[0038] In the memory unit (91), for example, a plurality of process processing recipes for executing process processing of a substrate or wafer are stored. In the recipes, control information of the plasma processing device (100) regarding process conditions is set. The control information includes, for example, gas flow rate, pressure inside the processing vessel (10), temperature inside the processing vessel (10), temperature of the substrate (61), process time, etc. Additionally, the light emission intensity, maximum value of light emission intensity, threshold, etc., which will be described later are stored in the memory unit (91).

[0039] Here, moisture in the processing chamber S may affect the film quality of the film formed on the substrate G by the plasma processing device (100). In particular, when forming a semiconductor device using an oxide semiconductor on the substrate G, the transistor characteristics may fluctuate significantly due to the influence of hydrogen or trace moisture in the film. The plasma processing device (100) is equipped with a moisture detection unit for detecting moisture in the processing chamber S. The moisture detection unit has a light receiving unit (200), an optical fiber (210), and a plasma light emission monitor (220).

[0040] A transparent window (13b) is provided on the side wall (13a) of the lower chamber (13) to transmit light from the plasma generated inside the processing chamber S while keeping the processing chamber S of the processing vessel (10) airtight. The transparent window (13b) is made of a material such as quartz. A light receiving unit (200) for detecting plasma light is provided on the outside of the transparent window (13b). The light receiving unit (200) is installed to photograph the substrate G loaded on the substrate loading stand (60) from the side in a horizontal direction through the transparent window (13b).

[0041] Plasma light incident on the light receiving unit (200) is input to the plasma emission monitor (220) through the optical fiber (210). The plasma emission monitor (220) acquires a emission spectrum in a wavelength range of, for example, 200 nm to 800 nm. Then, the plasma emission monitor (220) detects the emission intensity for each wavelength (resolution of the wavelength range).

[0042] Here, when water molecules are present in the treatment chamber S of the treatment vessel (10), the water molecules are dissociated into H radicals and OH radicals by the plasma generated in the treatment chamber S. The greater the amount of water in the treatment chamber S, the greater the amount of OH radicals dissociated, and the intensity of the emission spectrum (emission intensity) of the wavelength corresponding to the OH radicals (e.g., around 306 nm) increases. In this way, the plasma emission monitor (220) can detect the amount of water in the treatment chamber S based on the emission intensity of the wavelength corresponding to the OH radicals (specifically, a wavelength between 305 nm and 310 nm).

[0043] In addition, the inflow of water molecules into the processing room S includes moisture introduced into the processing room S from the outside (atmosphere) due to leakage in the processing room S, moisture remaining in the processing room S after the processing room S has been opened to the atmosphere for maintenance, and moisture adsorbed on the substrate G returned to the processing room S.

[0044] Additionally, an example of leakage is described. There may be cases where leakage occurs because the seal member is deformed by thermal expansion due to heat input from the plasma during process processing or radiant heat input from the substrate loading platform (60), causing misalignment of the seal member or insufficient sealing amount. Furthermore, the seal member includes a seal member (15) between the side wall (13a) of the lower chamber (13) and the support frame (14), a seal member (not shown) between the metal window (11) and the insulating member (25), a seal member (not shown) between the bottom surface of the substrate loading platform (60) and the stepped portion of the base (62), and a seal member (16) between the bottom surface of the base (62) and the bottom plate (13c) of the lower chamber (13).

[0045] Additionally, a plurality of lift pins (80) are arranged to rise from the loading surface of the substrate loading platform (60) and lift the substrate G. The lift pins (80) are connected to a pin holder (81) guided by a pin guide (82). The pin holder (81) is connected to a driving unit (not shown) and is configured to be inserted and penetrate in an upward and downward direction, that is, perpendicularly intersecting the bottom plate (13c) with respect to an empty through hole in the bottom plate (13c) of the lower chamber (13). A bellows (83) is provided between the end surface of the pin guide (82) and the flange surface of the pin holder (81), and the sections between the substrate (61) and the pin guide (82), between the pin guide (82) and the bellows (83), and between the bellows (83) and the pin holder (81) each include a sealing member (not shown) and are hermetically connected. When the substrate loading platform (60) is thermally expanded due to heat input from the plasma during process processing or temperature control of the substrate loading platform (60), the lift pin (80) or pin holder (81) guided by the pin guide (82) moves together with the substrate loading platform (60), causing friction to occur in the bellows (83) and leakage to occur in the bellows (83).

[0046] [2nd Plasma Treatment Device]

[0047] The second plasma processing device (101) (substrate processing system) will be described using FIG. 2. FIG. 2 is a cross-sectional view illustrating an example of the second plasma processing device (101).

[0048] Up to this point, a plasma processing device (100) (see FIG. 1) has been described having a sealing member between the bottom surface of a substrate loading platform (60) that includes a heating resistor and a temperature control medium channel and forms a bias electrode, and between the stepped portion of a base (62), and between the bottom surface of the base (62) and the bottom plate (13c) of a lower chamber (13). The configuration of the plasma processing device is not limited to this. It may also be applied to a plasma processing device (101) in which a substrate loading platform (160) that includes a heating resistor, does not include a temperature control medium channel, and does not form a bias electrode is disposed, and there is no sealing member on the base (162). Furthermore, the configuration is the same as that of the plasma processing device (100), particularly regarding the parts that are not described.

[0049] A plasma processing device (101) has a processing container (110) having a rectangular box shape, a substrate loading platform (160) disposed within the processing container (110) and having a rectangular outer shape when viewed from the plane on which a substrate G is loaded, and a control unit (90). Additionally, the processing container (110) may have a shape such as a cylindrical box shape or an elliptical box shape, and in this shape, the substrate loading platform (160) may also be circular or elliptical, and the substrate loaded on the substrate loading platform (160) may also be circular, etc.

[0050] The upper chamber (12) of the processing vessel (110) is configured similarly to FIG. 1, and a seal groove in the shape of a rectangular ring (or circular shape) is formed at the top of the side wall (113a) of the lower chamber (113) of the processing vessel (110). A seal member (115), such as an O-ring, is inserted into the seal groove, and the seal member (115) is supported by the contact surface of the support frame (14), thereby forming a seal structure between the lower chamber (113) and the support frame (14).

[0051] An inlet / outlet port (not shown) for transporting substrate G into and out of the lower chamber (113) is provided on the side wall (113a) of the lower chamber (113), and the inlet / outlet port is configured to be openable and closable by a gate valve (not shown). A transport chamber (not shown) containing a transport mechanism is adjacent to the lower chamber (113), and the gate valve is controlled to open and close, allowing the transport mechanism to transport substrate G into and out through the inlet / outlet port.

[0052] Additionally, a plurality of exhaust ports (113d) are provided on the bottom plate (113c) of the lower chamber (113). In the lower chamber (113), the side wall (113a) of the processing vessel (110) that accommodates the substrate loading platform (160) is formed in a rectangular shape. In other words, the processing vessel (110) has a rectangular horizontal cross-section at least at the location of the lower chamber (113) that accommodates the substrate loading platform (160). In addition, the substrate loading platform (160) is formed in a rectangular shape when viewed from above in a flat plane. In other words, the substrate loading platform (160) has a rectangular horizontal cross-section. The exhaust ports (113d) are arranged in a plurality on the bottom plate (113c) of the processing vessel (110), surrounding the substrate loading platform (160). In other words, the exhaust port (113d) is positioned outside the substrate loading platform (160) and inside the side wall (113a) of the processing container (110) (lower chamber (113)) when viewed in a planar view.

[0053] The substrate loading platform (160) has a substrate (161a) and a stem portion (161b). The stem portion (161b) is formed in a cylindrical shape, and one end is hermetically joined to the substrate (161a) by welding or the like. The other end of the stem portion (161b) may have a flange shape. One end of the bellows (184) has a flange shape, and by holding and supporting a seal member (not shown), such as an O-ring, between the bottom plate (113c) of the lower chamber (113), a seal structure between the bellows (184) and the lower chamber (113) is formed. A circular ring-shaped (endless shape) seal groove is formed on the other flange surface of the bellows (184), and a seal member (116), such as an O-ring, is inserted into the seal groove, and the contact surface of the other end of the stem portion (161b) is retained and supported, thereby forming a seal structure between the substrate loading stand (160) and the bellows (184).

[0054] The shape of the substrate (161a) as viewed in a plane is rectangular and has planar dimensions similar to those of the substrate G loaded on the substrate loading platform (160). The length of the long side of the substrate (161a) can be set to approximately 1800 mm to 3400 mm, and the length of the short side can be set to approximately 1500 mm to 3000 mm. With respect to these planar dimensions, the thickness of the substrate (161a) can be, for example, approximately 50 mm to 100 mm. The diameter of the stem portion (161b) can be set to approximately 100 mm to 400 mm, and the length can be set to approximately 500 mm to 1000 mm.

[0055] Additionally, a plurality of resistance heating elements HTa and HTb, such as sheath heaters, are arranged to cover the entire area of ​​a rectangular plane on the substrate (161a). Each of the resistance heating elements HTa and HTb is connected to a power supply line (171a, 171b), and passing through the cylindrical internal space of the stem portion (161b), the power supply line (171a, 171b) is connected to a power source (173) which is a heater power source, through a control unit (172) that performs ON-OFF control. Temperature monitor information, such as a plurality of thermocouples (not shown) inside the substrate (161a) arranged near the resistance heating elements HTa and HTb, is transmitted to the control unit (172), and by performing ON-OFF switching control, the temperature of the substrate (161a) is maintained at a set temperature, and the temperature of the substrate G loaded on the substrate loading platform (160) is raised and lowered to control the film deposition temperature.

[0056] An example of leakage is described in the plasma processing device (101) (see FIG. 2). There may be cases where leakage occurs because the seal member is deformed by thermal expansion due to heat input from the plasma during process processing or radiant heat input from the substrate loading platform (160), causing misalignment of the seal member or insufficient sealing amount. Additionally, the seal member includes a seal member (115) between the side wall (113a) of the lower chamber (113) and the support frame (14), a seal member (not shown) between the metal window (11) and the insulating member (25), and a seal member (116) between the other end of the stem portion (161b) of the substrate loading platform (160) and the other end surface of the bellows (184).

[0057] Additionally, a plurality of lift pins (180) are arranged to rise from the loading surface of the substrate loading platform (160) and lift the substrate G. The lift pins (180) are connected to pin holders (181) guided by pin guides (182). The pin holders (181) are connected to a driving unit (not shown) and are configured to be inserted and penetrate in an upward and downward direction, that is, perpendicularly intersecting the bottom plate (113c) with respect to an empty through hole in the bottom plate (113c) of the lower chamber (113). A bellows (183) is provided between the flange surface of the base plate (113c) and the pin holder (181), and a bellows (184) is provided between the base plate (113c) and the other end of the stem portion (161b). The space between the base plate (113c) and the bellows (183), and the space between the bellows (183) and the pin holder (181) each include a seal member (not shown) and are hermetically connected.

[0058] There are cases where the substrate loading platform (160) expands thermally due to heat input from the plasma during process processing or temperature control of the substrate loading platform (160), and the lift pin (180) or pin holder (181) guided by the pin guide (182) moves together with the substrate loading platform (160), causing friction to occur in the bellows (183) and leakage in the bellows (183).

[0059] In addition, similarly, due to the thermal expansion of the substrate loading platform (160), the other end of the stem portion (161b) moves in the direction of the seal member (116) (lower direction in FIG. 2), and flying debris consisting of by-products from the process is caught in the unfolded portion of the bellows (184), causing a small hole to be made and leakage to occur.

[0060] [Plasma emission spectrum]

[0061] Next, an example of a plasma emission spectrum detected by a plasma emission monitor (220) will be explained using FIGS. 3 to 7.

[0062] FIGS. 3 and 4 are graphs illustrating an example of a plasma emission spectrum. Here, a process for determining whether there is moisture in a treatment vessel (10) (110) during a cleaning or seasoning process using plasma of O2 gas or NF3 gas is described as an example. In the cleaning or seasoning process (moisture detection process), O2 gas and a noble gas (Ar, He, etc.) or only NF3 gas is supplied as a treatment gas into the treatment vessel (10) (110), and plasma is generated within the treatment vessel (10) (110). Furthermore, this process is performed during idle time prior to the film formation process, for example, when no substrate G is loaded on the substrate loading platform (60) (160), or when either unprocessed glass or a dummy substrate is loaded on the substrate loading platform (60) (160).

[0063] FIG. 3(a) is a graph illustrating an example of a plasma emission spectrum using O2 gas under normal conditions. FIG. 3(b) is a graph illustrating an example of a plasma emission spectrum using O2 gas under abnormal conditions. FIG. 4(a) is a graph illustrating an example of a plasma emission spectrum using NF3 gas under normal conditions. FIG. 4(b) is a graph illustrating an example of a plasma emission spectrum using NF3 gas under abnormal conditions.

[0064] Here, in normal conditions (no leakage, etc.), as shown in FIG. 3(a) or FIG. 4(a), no peak of luminescence intensity appeared at the wavelength corresponding to the OH radical (wavelength region indicated by the dashed frame). That is, it indicates that no moisture was detected (sufficiently little) in the processing chamber S. In other words, it indicates that no leakage occurred in the processing vessel (10)(110).

[0065] In contrast, in the case of abnormality (such as leakage), as shown in FIG. 3(b) or FIG. 4(b), a peak of luminescence intensity appears at a wavelength corresponding to OH radicals (wavelength region indicated by the dashed frame). That is, it indicates that moisture has been detected in the processing chamber S.

[0066] FIG. 5 is a graph illustrating an example of a plasma emission spectrum. Here, the case of forming a silicon oxide film (SiO film) on a substrate G is described as an example. The same applies to cases where a dummy substrate is installed on a substrate loading platform (60) (160) and a seasoning treatment is performed, or where a substrate is not installed on a loading platform and a pre-coating is performed. In the process of forming a silicon oxide film, a raw material gas and a reaction gas that reacts with the raw material gas (a gas containing oxygen atoms) are supplied as processing gases into a processing vessel (10) (110), and plasma is generated within the processing vessel (10) (110). By doing so, a film is formed by plasma CVD. Here, the raw material gas is a gas containing silicon (Si) and not containing hydrogen atoms (H). Specifically, silicon halide gases (SiF4, SiCl4) may be used. The reaction gas may be a gas containing oxygen atoms (O) and not containing hydrogen atoms (H). Specifically, O2 gas can be used as the reaction gas. In addition, this treatment is performed during the film formation process, for example, while the product substrate, substrate G, is loaded on the substrate loading platform (60) (160).

[0067] FIG. 5(a) is a graph showing an example of a plasma emission spectrum under normal conditions. FIG. 5(b) is a graph showing an example of a plasma emission spectrum under abnormal conditions.

[0068] Here, in normal conditions (no leakage, etc.), as shown in FIG. 5(a), no peak of luminescence intensity appears at the wavelength corresponding to the OH radical (wavelength region indicated by the dashed frame). That is, it indicates that no moisture is detected (sufficiently low) in the processing chamber S.

[0069] In contrast, in the case of abnormality (such as leakage), as shown in FIG. 5(b), a peak in luminescence intensity appears at the wavelength corresponding to OH radicals (wavelength region indicated by the dashed frame). That is, it indicates that moisture has been detected in the processing chamber S.

[0070] FIG. 6 is a graph illustrating an example of a plasma emission spectrum. Here, the case of forming a silicon nitride film (SiN film) on a substrate G is described as an example. The same applies to cases where a dummy substrate is installed on a substrate loading platform (60) (160) and a seasoning treatment is performed, or where a substrate is not installed on a loading platform and a pre-coating is performed. In the process of forming a silicon nitride film, a raw material gas and a reaction gas that reacts with the raw material gas (a gas containing nitrogen atoms) are supplied as processing gases into a processing vessel (10) (110), and plasma is generated within the processing vessel (10) (110). By doing so, a film is formed by plasma CVD. Here, the raw material gas is a gas containing silicon (Si) and not containing hydrogen atoms (H). Specifically, silicon halide gases (SiF4, SiCl4) may be used. The reaction gas may be a gas containing nitrogen atoms (N) and not containing hydrogen atoms (H). Specifically, N2 gas can be used as the reaction gas. In addition, this treatment is performed during the film formation process, for example, while the product substrate, substrate G, is loaded on the substrate loading platform (60) (160).

[0071] FIG. 6(a) is a graph showing an example of a plasma emission spectrum under normal conditions. FIG. 6(b) is a graph showing an example of a plasma emission spectrum under abnormal conditions.

[0072] Here, in normal conditions (no leakage, etc.), as shown in FIG. 6(a), no peak of luminescence intensity appears at the wavelength corresponding to the OH radical (wavelength region indicated by the dashed frame). That is, it indicates that no moisture is detected (sufficiently low) in the processing chamber S.

[0073] In contrast, in the case of abnormality (such as leakage), as shown in Fig. 6(b), a peak in luminescence intensity appears at the wavelength corresponding to the OH radical (wavelength region indicated by the dashed frame). That is, it indicates that moisture has been detected in the processing chamber S.

[0074] Figure 7 is a graph illustrating an example of a plasma emission spectrum. Here, the case of forming a silicon oxide film (SiOx film) on a substrate G is described as an example. Figure 7(a) describes an example where SiH4, a gas containing hydrogen atoms (H), is used as the source gas and N2O is used as the reaction gas. In addition, Figure 7(b) describes an example where SiF4, a gas not containing hydrogen atoms (H), is used as the source gas and O2 is used as the reaction gas.

[0075] As shown in Fig. 7(a), when a gas containing hydrogen atoms (H) is used, even under normal conditions (no leakage, etc.), the peak of the luminescence intensity is detected in the vicinity of the wavelength corresponding to the OH radical (wavelength region indicated by the dashed frame), making it difficult to detect moisture.

[0076] In contrast, as shown in Fig. 7(b), by using a gas (SiF4, O2) that does not contain hydrogen atoms (H) as the source gas and reaction gas, it becomes easier to detect the peak of the luminescence intensity at a wavelength corresponding to the OH radical (wavelength region indicated by the dashed line frame).

[0077] As described above, as illustrated in FIG. 3, moisture can be detected by generating an O2 plasma prior to the film formation process and detecting the plasma light. Additionally, as illustrated in FIG. 5 to 7, moisture can be detected during the process by using a gas that does not contain hydrogen atoms (H) as the film formation process gas (raw material gas, reaction gas), generating a plasma, and detecting the plasma light.

[0078] In addition, the combination of treatment gases is not limited to those described in detail in FIGS. 3 to 6. In the treatment gas for generating plasma, it is sufficient that it does not simultaneously contain both hydrogen atoms (H) and oxygen atoms (O).

[0079] The treatment gas used in the idle phase prior to the process is a combination of a noble gas (first combination) and either a gas containing oxygen atoms (O) or a gas containing nitrogen atoms (N), or a single gas containing fluorine atoms (F), and the treatment gas of this combination or single gas does not contain hydrogen atoms (H).

[0080] For gases that do not contain hydrogen atoms (H), any of O2, N2O, etc. can be used as the gas containing oxygen atoms (O). Any of N2, N2O, etc. can be used as the gas containing nitrogen atoms (N). Any of Ar, He, etc. can be used as the noble gas. NF3 can be used as the single gas containing fluorine atoms (F).

[0081] In addition, the processing gas used in the process of forming a silicon oxide film is a combination of a source gas containing silicon atoms (Si) and a gas containing oxygen atoms (O) (second combination), and the processing gas of this combination does not contain hydrogen atoms (H).

[0082] In the case where hydrogen atoms (H) are not included, any silicon halide gas (SiF4, SiCl4), etc. can be used as the source gas containing silicon atoms (Si). Any O2, N2O, etc. can be used as the gas containing oxygen atoms (O).

[0083] In addition, the processing gas used in the process of forming a silicon nitride film is a combination of a source gas containing silicon atoms (Si) and a gas containing nitrogen atoms (N) (second combination), and the processing gas of this combination does not contain at least one of hydrogen atoms (H) and oxygen atoms (O).

[0084] In the case where hydrogen atoms (H) are not included, any silicon halide gas (SiF4, SiCl4), etc. can be used as the source gas containing silicon atoms (Si). Any of the following gases can be used as the gas containing nitrogen atoms (N): N2, N2O, etc.

[0085] In cases where it does not contain oxygen atoms (O), the source gas containing silicon atoms (Si) is silicon halide gas (SiF4, SiCl4), etc., or SiH4 Any of the following can be used. For gases containing nitrogen atoms (N), any of N2, NH3, etc. can be used.

[0086] [Plasma Treatment Method]

[0087] Next, a plasma treatment method of a plasma treatment device (100) (101) will be explained using FIGS. 8 to 10.

[0088] [How to Set the Threshold]

[0089] FIG. 8 is a flowchart illustrating an example of a process of a plasma processing apparatus. In the process shown in the flowchart of FIG. 8, a first luminescence intensity is obtained a preset number of times (number of samples), and a threshold is set to determine the amount of moisture contained in the processing chamber S.

[0090] In step S101, substrate G is brought into the processing room S. Here, the control unit (90) controls a substrate transport device (not shown) to transport substrate G into the processing room S and loads substrate G onto the substrate loading platform (60)(160). Additionally, depending on the plasma treatment of step S102 described later, substrate G may be either unprocessed glass or a dummy substrate, or a product substrate may be used. Furthermore, if the plasma treatment of step S102 described later is a plasma treatment performed without loading substrate G onto the substrate loading platform (60)(160), step S101 may be omitted.

[0091] In step S102, plasma treatment is performed. Here, the control unit (90) controls the exhaust device (50) to reduce the pressure inside the treatment chamber S and, while exhausting the inside of the treatment chamber S, controls the treatment gas supply unit (30) to introduce treatment gas into the treatment chamber S and controls the high-frequency power supply (44) to supply high-frequency power to the high-frequency antenna (41), thereby exciting the plasma of the treatment gas inside the treatment chamber S. Additionally, the plasma treatment may be a treatment for the substrate G (film formation treatment, etc.) or a treatment for the treatment vessel (10)(110) (seasoning treatment, cleaning treatment, pre-coating treatment, etc.).

[0092] In step S103, light of a specific wavelength range is received. Here, during plasma treatment (S102), plasma light containing a specific wavelength range corresponding to OH radicals is received at the light receiving unit (200) through the transmission window (13b).

[0093] In step S104, the luminescence intensity of a specific wavelength region corresponding to OH radicals is obtained. Here, the plasma luminescence monitor (220) obtains the first luminescence intensity of a specific wavelength region corresponding to OH radicals. When the plasma processing is finished, the processing of the control unit (90) proceeds to step S105.

[0094] In step S105, the maximum value of the first luminescence intensity in a specific wavelength region corresponding to the OH radical is recorded. Here, the control unit (90) stores the maximum value of the first luminescence intensity in a specific wavelength region corresponding to the OH radical in the plasma treatment (S102) in the memory unit (91).

[0095] In step S106, it is determined whether the sample has been repeated a predetermined number of times. Additionally, the sample has been repeated at least five times. If the sample has not been repeated a predetermined number of times (S106 “No”), the processing of the control unit (90) returns to step S101. If the sample has been repeated a predetermined number of times (S106 “Yes”), the processing of the control unit (90) proceeds to step S107. By doing so, the maximum value of the first luminescence intensity in a specific wavelength region corresponding to the OH radical in the plasma processing (S102) of a predetermined number of times is stored in the memory unit (91).

[0096] Below, a threshold is obtained from the maximum value of the first luminescence intensity in a specific wavelength region corresponding to the OH radical in the plasma treatment (S102) of a predetermined number of samplings stored in the memory unit (91).

[0097] In step S107, the control unit (90) calculates the average value of the maximum value of the first luminescence intensity in a specific wavelength region corresponding to a predetermined number of OH radicals stored in the memory unit (91).

[0098] In step S108, the control unit (90) registers the average value of the maximum value calculated in step S107 in the memory unit (91).

[0099] In step S109, the control unit (90) calculates a value obtained by multiplying the average value of the maximum values ​​calculated in step S107 by a predetermined allowance rate as a threshold, and registers the calculated threshold in the memory unit (91). Here, the allowance rate is a value of 1 or greater.

[0100] [Method for Determining Moisture]

[0101] FIG. 9 is a flowchart illustrating an example of a process of a plasma processing apparatus. The process shown in the flowchart of FIG. 9 is a process for determining the amount of moisture in the processing chamber S based on the threshold set by the process shown in FIG. 8.

[0102] In step S201, substrate G is brought into the processing room S. Here, the control unit (90) controls a substrate transport device (not shown) to transport substrate G into the processing room S and loads substrate G onto the substrate loading platform (60)(160). Additionally, depending on the plasma treatment of step S202 described later, substrate G may be either unprocessed glass or a dummy substrate, or a product substrate may be used. Furthermore, if the plasma treatment of step S202 described later is a plasma treatment performed without loading substrate G onto the substrate loading platform (60)(160), step S201 may be omitted.

[0103] In step S202, plasma treatment is performed. Here, the control unit (90) controls the exhaust device (50) to reduce the pressure inside the treatment chamber S and exhausts the inside of the treatment chamber S, while controlling the treatment gas supply unit (30) to introduce treatment gas into the treatment chamber S, and controls the high-frequency power supply (44) to supply high-frequency power to the high-frequency antenna (41), thereby exciting the plasma of the treatment gas inside the treatment chamber S. Additionally, the plasma treatment may be a treatment for the substrate G (film formation treatment, etc.) or a treatment for the treatment vessel (10)(110) (seasoning treatment, cleaning treatment, pre-coating treatment, etc.).

[0104] In step S203, light of a specific wavelength range is received. Here, during plasma treatment (S202), plasma light containing a specific wavelength range corresponding to OH radicals is received at the light receiving unit (200) through the transmission window (13b).

[0105] In step S204, a second luminescence intensity in a specific wavelength region corresponding to OH radicals is obtained. Here, the plasma luminescence monitor (220) obtains a second luminescence intensity in a specific wavelength region corresponding to OH radicals.

[0106] In step S205, the maximum value of the second luminescence intensity in a specific wavelength region corresponding to the OH radical is recorded. Here, the control unit (90) stores the maximum value of the second luminescence intensity in a specific wavelength region corresponding to the OH radical in the plasma treatment (S202) in the memory unit (91).

[0107] In step S206, the control unit (90) determines whether the maximum value recorded in step S205 is less than the threshold registered in S109. Additionally, the determination process of step S206 is performed during plasma processing. Furthermore, if the determination process of step S206 is performed during plasma processing, the determination process of step S206 is repeated until the plasma processing is completed.

[0108] If the maximum value is not below the threshold (S206 · "No"), the control unit (90) determines that it is abnormal (Step S207). That is, it determines that the amount of moisture in the processing room S is above the allowable value. In addition, the control unit (90) displays a warning on a display device, such as a display, that visualizes and displays the operating status of the plasma processing device (100) (101).

[0109] When the maximum value is below the threshold (S206·"Yes"), the control unit (90) determines that it is normal (step S208). That is, it determines that the amount of moisture in the processing room S is below the allowable value.

[0110] In this way, according to the treatment illustrated in FIG. 9, the amount of moisture in the treatment chamber S can be determined based on the threshold. In addition, the amount of moisture in the treatment chamber S can be determined during plasma treatment.

[0111] [Processing after abnormality determination]

[0112] FIG. 10 is a flowchart illustrating an example of the processing of a plasma processing apparatus. The processing shown in the flowchart of FIG. 10 is the processing in the case where an abnormality is determined in step S207.

[0113] In step S301, the control unit (90) determines that there is an abnormality (also, see S207 in FIG. 9).

[0114] In step S302, plasma processing is continued. Here, similar to step S202, the control unit (90) controls the exhaust device (50) to reduce the pressure inside the processing room S and, while exhausting the inside of the processing room S, controls the processing gas supply unit (30) to introduce processing gas into the processing room S and controls the high-frequency power supply (44) to supply high-frequency power to the high-frequency antenna (41), thereby exciting the plasma of the processing gas inside the processing room S.

[0115] In step S303, light in a specific wavelength range is received. Here, during plasma treatment (S202, S302), plasma light including a specific wavelength range corresponding to OH radicals is received at the receiving unit (200) through the transmission window (13b).

[0116] In step S304, a second luminescence intensity in a specific wavelength region corresponding to OH radicals is obtained. Here, the plasma luminescence monitor (220) obtains a second luminescence intensity in a specific wavelength region corresponding to OH radicals.

[0117] In step S305, the maximum value of the second luminescence intensity in a specific wavelength region corresponding to the OH radical is recorded. Here, the control unit (90) stores the maximum value of the second luminescence intensity in a specific wavelength region corresponding to the OH radical in the plasma treatment (S202, S302) in the memory unit (91).

[0118] In step S306, the control unit (90) determines whether the maximum value recorded in step S305 is less than the threshold registered in S109.

[0119] If the maximum value is not below the threshold (S306 · "No"), the control unit (90) determines that it is abnormal. The control unit (90) displays a warning on a display device, such as a display that visualizes and displays the operating status of the plasma processing device (100) (101). That is, it determines that the amount of moisture in the processing room S is above the allowable value (Step S207).

[0120] If the maximum value is below the threshold (S306 · "Yes"), the processing of the control unit proceeds to step S310. In step S310, the control unit (90) determines that it has been restored normally (step S310). In this case, plasma processing (S202, S302) is continued.

[0121] Meanwhile, if the maximum value is not below the threshold (S306 · "No"), the processing of the control unit proceeds to step S307. In step S307, the control unit (90) determines whether the continuation of plasma processing (S302) is more than a specified number of times. Also, the specified number of times (limit on the number of executions) is, for example, 5 times. Also, the determination interval of step S307 (in other words, the continuation time of plasma processing in step S302) is within the range of 10 milliseconds to 1000 milliseconds.

[0122] If the number of occurrences exceeds the prescribed number (S307 · "Yes"), the processing of the control unit proceeds to step S311. In step S311, the control unit (90) determines that a leak has occurred in the device. Additionally, the control unit (90) displays a warning on a display device, such as a display that visualizes and displays the operating status of the plasma processing device (100) (101).

[0123] Meanwhile, if the number of times is not more than the prescribed number (S307 · "No"), the processing of the control unit proceeds to step S308. In step S308, the control unit (90) determines whether the current maximum value recorded in step 305 is less than the previous maximum value. In other words, the control unit (90) determines whether the maximum value is decreasing.

[0124] If the current maximum value is less than the previous maximum value, in other words, if the maximum value has decreased (S308 · "Yes"), the processing of the control unit (90) returns to step S302 and continues the plasma processing.

[0125] Meanwhile, if the current maximum value is not less than the previous maximum value, in other words, if the maximum value has not decreased (S308 · "No"), the processing of the control unit proceeds to step S309. In step S309, the control unit (90) determines that a leak has occurred in the device. Additionally, the control unit (90) displays a warning on a display device, such as a display that visualizes and displays the operating status of the plasma processing device (100) (101).

[0126] As described above, in the case where an abnormality is determined (S301, also refer to S207 in FIG. 9), if the maximum value decreases (S308 · "Yes"), plasma treatment is continued (S302). Then, if the maximum value becomes below the threshold (S306 · "Yes"), it is determined that it has been restored (S310).

[0127] For example, if moisture adsorbed on substrate G is returned to processing room S along with substrate G, the maximum value temporarily exceeds the threshold as moisture is released from substrate G, and is determined to be abnormal. Then, it is determined that it has been restored as the moisture is exhausted from processing room S by the exhaust device (50). Additionally, if processing room S is opened to the atmosphere for maintenance, etc., and moisture is adsorbed on the walls of processing room S, etc., the maximum value temporarily exceeds the threshold as moisture is released from the walls, etc., and is determined to be abnormal. Then, it is determined that it has been restored as the moisture is exhausted from processing room S by the exhaust device (50).

[0128] Meanwhile, in the case where it is determined that there is an abnormality (S301, also refer to S207 in FIG. 9), if the maximum value has not decreased (S308, "No"), it is determined that leakage has occurred in the device (S309). In addition, even if the maximum value has decreased, if it has not been restored after a specified number of cycles has elapsed (S307, "Yes"), it is determined that leakage has occurred in the device (S309).

[0129] In this way, according to the treatment shown in FIG. 10, it is possible to determine whether the moisture in the treatment room S is due to leakage or moisture released from the wall or substrate G.

[0130] In addition, it was explained that if an abnormality is determined during substrate processing (S207), the same plasma processing as in step S202 is continued (S302), but this is not limited to this.

[0131] For example, if it is determined that there is an abnormality during or after the substrate processing (S207), additional processing may be performed after the plasma processing of step S202 is completed. In this case, additional processing is performed in step S302 as illustrated in FIG. 10. The additional processing is performed after the product substrate on which the plasma processing of step S202 was performed is removed, with a dummy substrate, etc., loaded on the substrate loading stand (60)(160) or without any substrate loaded on the substrate loading stand (60)(160). In the additional processing, O2 gas and a rare gas (Ar, He, etc.) are supplied as processing gases into the processing container (10)(110), and plasma is excited into the processing container (10)(110).

[0132] In addition, during the additional process, the temperature of the treatment room S is raised. By doing so, moisture adsorbed on the thermal spray film formed on the wall of the treatment room S is released and exhausted by the exhaust device (50).

[0133] The temperature increase during the additional processing is explained using FIG. 11. FIG. 11 is a diagram illustrating an example of the moisture content of a substrate. Here, moisture was adsorbed onto substrate G, on which a thermal spray film (Al2O3 film) was formed, by simulating the side wall of a processing chamber S, and then the moisture was released under conditions 1 to 6. The initial indicates the weight of the substrate before moisture adsorption. "Immediately after immersion" indicates the weight of the substrate immediately after moisture adsorption. Conditions 1 to 6 indicate the weight of substrate G after heating the moisture-adsorbed substrate at the bake temperature (processing chamber temperature). As shown in FIG. 11, moisture is released from the thermal spray film by heating to 60°C or higher. In addition, it is preferable that the heating temperature be 450°C or lower.

[0134] In this way, during additional processing, by heating the inside of the processing chamber S to 60°C or higher (and 450°C or lower), moisture adsorbed on the walls inside the processing chamber S can be released and exhausted. By doing so, moisture inside the processing chamber S can be efficiently removed. Accordingly, changes in film quality caused by moisture can be suppressed during substrate processing of product substrates, such as in a film deposition process.

[0135] Although embodiments of the plasma treatment method have been described above, the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the patent claims.

Claims

Claim 1 A plasma treatment method for performing a predetermined plasma treatment within a treatment chamber, wherein the plasma treatment comprises: a process of setting a threshold for determining a moisture content within the treatment chamber based on the first luminescence intensity obtained by performing a plasma treatment a predetermined number of times; a process of determining the moisture content based on the second luminescence intensity in a plasma treatment subsequent to the predetermined number of times and the threshold; wherein the process of setting the threshold comprises: (a) a process of exciting a plasma of a treatment gas within the treatment chamber; (b) a step of obtaining the first luminescence intensity by receiving light in a specific wavelength region of the luminescence spectrum of the plasma that is correlated with the moisture content within the treatment chamber; (c) a process of recording the value of the first luminescence intensity; (d) a step of calculating the threshold from the first luminescence intensity of the predetermined number of times; and (e) a process of recording the threshold. Claim 2 In claim 1, the above process (a) is a plasma treatment method performed when no substrate is loaded on the substrate loading rack in the processing chamber. Claim 3 A plasma processing method according to claim 1, wherein the above process (a) is executed with either raw glass or a dummy substrate loaded on a substrate loading rack in the processing chamber. Claim 4 In claim 1, the above process (a) is a plasma treatment method performed with a product substrate loaded on a substrate loading rack in the processing room. Claim 5 A plasma treatment method according to claim 1, wherein the treatment gas is a combination of any one of a gas containing oxygen atoms or a gas containing nitrogen atoms and a noble gas, or a single gas containing fluorine atoms, and the treatment gas is a gas that does not contain hydrogen atoms. Claim 6 A plasma treatment method according to claim 5, wherein the gas containing the oxygen atom is either O2 or N2O, the gas containing the nitrogen atom is either N2O or N2, the noble gas is either He or Ar, and the single gas containing the fluorine atom is NF3. Claim 7 A plasma treatment method according to claim 1, wherein the treatment gas is a combination of a source gas containing silicon atoms and a reaction gas that reacts with the source gas, and the treatment gas is a gas that does not contain at least one of hydrogen atoms and oxygen atoms. Claim 8 In claim 7, the source gas containing silicon atoms is SiF4, SiCl4, SiH4 A plasma treatment method in which the reaction gas is any one of O2, N2O, N2, or NH3. Claim 9 A plasma treatment method according to claim 1, wherein the preset number of times is 5 or more. Claim 10 In claim 1, the process for determining the moisture amount comprises (f) a process for determining the increase or decrease of the moisture amount based on the increase or decrease of the second luminescence intensity, wherein the determination of the increase or decrease of the moisture amount is such that if the second luminescence intensity increases, the moisture amount is determined to increase, and if the second luminescence intensity decreases, the moisture amount is determined to decrease. A plasma treatment method. Claim 11 A plasma treatment method according to claim 1, wherein the specific wavelength range corresponding to the amount of moisture in the treatment chamber is a wavelength range of 305 nm to 310 nm. Claim 12 In claim 11, the above process (c) is a plasma treatment method that records the maximum value of the first luminescence intensity in the above specific wavelength range. Claim 13 A plasma treatment method according to claim 12, wherein the threshold is a value obtained by multiplying the average value of the maximum values ​​of the first luminescence intensity by a predetermined coefficient. Claim 14 A plasma treatment method according to claim 1, wherein, after the process of determining the moisture amount, an additional treatment to reduce the moisture amount is performed. Claim 15 In paragraph 14, the above additional processing is a plasma processing method in which a limit on the number of executions is provided. Claim 16 A plasma treatment method according to claim 15, wherein the limit of the number of executions is 5 times. Claim 17 In paragraph 14, the above additional treatment is a plasma treatment method that excites plasma by introducing at least O2 gas. Claim 18 In paragraph 17, the above additional treatment is a plasma treatment method involving raising the temperature of the above treatment chamber. Claim 19 In paragraph 18, the plasma treatment method wherein the temperature of the above-mentioned treatment chamber is 60°C or higher. Claim 20 A plasma processing device comprising a processing vessel having a processing chamber, a substrate loading platform provided within the processing chamber, a processing gas supply unit for introducing a processing gas into the processing chamber, a plasma generation unit for exciting the plasma of the processing gas within the processing chamber, and a control unit; wherein the control unit performs a process of obtaining a first luminescence intensity by executing a plasma processing of a preset number of times and setting a threshold for determining the amount of moisture contained within the processing chamber based on the obtained first luminescence intensity, and performs a process of determining the amount of moisture based on the second luminescence intensity in plasma processing after the preset number of times and the threshold, and the process of setting the threshold comprises: (a) a process of exciting the plasma of the processing gas within the processing chamber; (b) a step of obtaining the first luminescence intensity by receiving light in a specific wavelength region of the luminescence spectrum of the plasma that is correlated with the amount of moisture within the processing chamber; (c) a process of recording the value of the first luminescence intensity; and (d) from the first luminescence intensity of the preset number of times A plasma processing apparatus having a step for calculating the threshold and (e) a process for recording the threshold.

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