Display devices, display modules, and electronic devices

Abstract

A display device having an imaging function is provided. A display device combining high viewing angle characteristics and high imaging performance is provided. The display device is configured to have a light-emitting element and a color filter. The light-emitting element has a light-emitting region having the function of emitting light of a first color and the function of receiving light of a second color. A color filter is located above the light-emitting element and has the function of transmitting light of the first color and the function of blocking light of the second color. The color filter has an aperture. In addition, when viewed from a planar perspective, the light-emitting region has a portion located inside the aperture.

Description

Technology Field

[0001] One embodiment of the present invention relates to a display device. One embodiment of the present invention relates to a display device having an imaging function.

[0002] Furthermore, one embodiment of the present invention is not limited to the technical field described above. Examples of the technical field of one embodiment of the present invention disclosed in this specification, etc. include semiconductor devices, display devices, light-emitting devices, capacitor devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving the same, or methods for manufacturing the same. A semiconductor device refers to any device capable of functioning by utilizing semiconductor characteristics. Background Technology

[0003] In recent years, display devices are required to be highly detailed in order to display high-resolution images. In addition, in information terminals such as smartphones, tablet-type terminals, and laptop-type PCs (personal computers), display devices are required to have low power consumption in addition to high detail. Furthermore, display devices are required that not only display images but also have various added functions, such as a touch panel function or a fingerprint capture function for authentication.

[0004] As a display device, for example, a light-emitting device having a light-emitting element is being developed. A light-emitting element (also referred to as an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon is applied to display devices, having features such as being easy to make thin and lightweight, capable of high-speed response to input signals, and capable of driving using a DC constant voltage power supply. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. Prior art literature

[0005] Japanese Patent Publication No. JP 2014-197522 The problem to be solved

[0006] One embodiment of the present invention has as its objective to provide a display device having an imaging function. One embodiment of the present invention has as its objective to provide an imaging device or a display device capable of clearly imaging fingerprints, etc. One embodiment of the present invention has as its objective to provide a display device with enhanced viewing angle characteristics. One embodiment of the present invention has as its objective to provide a display device that combines high viewing angle characteristics and high imaging performance. One embodiment of the present invention has as its objective to provide an imaging device or a display device capable of performing high-sensitivity imaging. One embodiment of the present invention has as its objective to provide a display device that functions as a touch panel.

[0007] One embodiment of the present invention has as one of its objectives to reduce the number of components of electronic devices, etc. One embodiment of the present invention has as one of its objectives to provide a multi-functional display device. One embodiment of the present invention has as one of its objectives to provide a display device, an imaging device, or an electronic device, etc., having a novel configuration. One embodiment of the present invention has as one of its objectives to at least alleviate at least one of the problems of the prior art.

[0008] Furthermore, the description of these problems does not prevent the existence of other problems. Also, one embodiment of the present invention is not required to solve all of these problems. Additionally, problems other than these can be derived from the description in the specification, drawings, claims, etc. means of solving the problem

[0009] One embodiment of the present invention is a display device having a light-emitting element and a color filter. The light-emitting element has a light-emitting region having a function of emitting light of a first color and a function of receiving light of a second color. A color filter is positioned above the light-emitting element and has a function of transmitting light of the first color and a function of blocking light of the second color. The color filter has an opening. Additionally, when viewed in a planar view, the light-emitting region has a portion located inside the opening.

[0010] In addition, it is desirable that the display device has an overlapping portion where the outer edge of the color filter and the light-emitting area overlap when viewed from a planar view.

[0011] In addition, the display device preferably has an end of the light-emitting area located inside the opening when viewed from a planar view, and has a gap between the light-emitting area and the color filter.

[0012] In addition, it is preferable to further have a light-blocking layer as described above. In this case, the light-blocking layer is positioned above the light-emitting element and has the function of blocking light of a first color and light of a second color. In addition, when viewed from a planar view, it is preferable that the light-blocking layer be located outside the opening of the color filter. In addition, it is preferable that the color filter have a first part and a second part. The first part is a part that overlaps with the light-blocking layer when viewed from a planar view, and the second part is located between the first part and the opening when viewed from a planar view, and is a part that does not overlap with either the light-blocking layer or the light-emitting element.

[0013] In addition, it is preferable to have a light-emitting element in addition to the above. In this case, it is preferable that the light-emitting element has a light-emitting region having the function of emitting light of a second color. In addition, it is preferable that the light-emitting element be provided on the same surface as the light-emitting element.

[0014] In addition, the light-emitting element described above preferably has an electron injection layer, an electron transport layer, a light-emitting layer, an active layer, a hole injection layer, and a hole transport layer between the pixel electrode and the first electrode. At this time, the light-emitting element preferably has one or more of the first electrode, an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0015] In addition, in the above-described display device, it is preferable that the light-blocking layer is located between the light-emitting element and the light-emitting element when viewed from a planar view. Furthermore, when viewed from a planar view, it is preferable that the light-emitting region of the light-blocking layer and the light-emitting element do not overlap, and that there is a gap between the end of the light-blocking layer and the end of the light-emitting region.

[0016] In addition, it is preferable to further include a first substrate and a second substrate in the above. At this time, the first substrate and the second substrate are provided facing each other. In addition, a light-emitting element and a color filter are provided between the first substrate and the second substrate. In addition, it is preferable that the light-emitting element is provided on the first substrate and the color filter is provided on the second substrate.

[0017] In addition, it is desirable to further have a functional layer as described above. In this case, it is desirable that the functional layer be provided in contact with the side opposite to the side where the color filter of the second substrate is provided. In addition, it is desirable that the functional layer have a lower refractive index than the second substrate.

[0018] In addition, when the distance between the light-emitting element and the second substrate is T1 and the minimum width of the light-emitting region of the light-emitting element is W1, it is desirable that T1 satisfies a value of at least 0.1 times and no more than 10 times W1.

[0019] In addition, when the thickness of the second substrate is set to T2 in the above, it is desirable that T2 satisfies a value of 5 times or more and 100 times or less of T1.

[0020] In addition, another embodiment of the present invention is a display module having a connector or an integrated circuit and a display device of any of the above-described forms.

[0021] In addition, another embodiment of the present invention is an electronic device having at least one of the above-mentioned display module, an antenna, a battery, a housing, a camera, a speaker, a microphone, a touch sensor, and an operation button. Effects of the invention

[0022] According to one embodiment of the present invention, a display device having an imaging function may be provided. Alternatively, an imaging device or display device capable of clearly imaging fingerprints, etc. may be provided. Alternatively, a display device with enhanced viewing angle characteristics may be provided. Alternatively, a display device combining high viewing angle characteristics and high imaging performance may be provided. Alternatively, an imaging device or display device capable of performing high-sensitivity imaging may be provided. Alternatively, a display device functioning as a touch panel may be provided.

[0023] According to one embodiment of the present invention, the number of components of electronic devices, etc., can be reduced. Or a multi-functional display device can be provided. Or a display device, imaging device, or electronic device, etc. having a novel configuration can be provided. Or at least one of the problems of the prior art can be mitigated.

[0024] Furthermore, the description of these effects does not preclude the existence of other effects. Also, one embodiment of the present invention does not necessarily have to possess all of these effects. Additionally, effects other than these can be derived from the description in the specification, drawings, claims, etc. Brief explanation of the drawing

[0025] Figures 1 (A) to (C) are cross-sectional views showing examples of display devices. Figures 2 (A) to (C) are cross-sectional views showing an example of a display device. Figures 3 (A) and (B) are cross-sectional views showing an example of a display device. Figure 4 is a cross-sectional view showing an example of a display device. Figures 5 (A) and (B) are cross-sectional views showing an example of a display device. Figures 6 (A) and (B) are top views showing an example of a display device. Figures 7 (A) to (C) are cross-sectional views showing an example of a display device. Figures 8 (A) to (C) are cross-sectional views showing an example of a display device. Figures 9 (A) and (B) are cross-sectional views showing an example of a display device. FIGS. 10 (A) to (D) are cross-sectional views showing an example of a display device. FIGS. 10 (E) to (G) are top views showing an example of a pixel. Figures 11 (A) to (D) are top views showing an example of a pixel. Figures 12 (A) to (E) are cross-sectional views showing an example of a light-emitting element. Figures 13 (A) and (B) are cross-sectional views showing an example of a display device. Figures 14 (A) and (B) are cross-sectional views showing an example of a display device. Figures 15 (A) and (B) are cross-sectional views showing an example of a display device. Figures 16 (A) and (B) are cross-sectional views showing an example of a display device. Figures 17 (A) and (B) are cross-sectional views showing an example of a display device. FIG. 18 is a perspective view showing an example of a display device. FIG. 19 is a cross-sectional view showing an example of a display device. FIG. 20 is a cross-sectional view showing an example of a display device. Figure 21 (A) is a cross-sectional view showing an example of a display device. Figure 21 (B) is a cross-sectional view showing an example of a transistor. Figures 22 (A) and (B) are drawings showing an example of an electronic device. Figures 23 (A) to (D) are drawings showing examples of electronic devices. Figures 24 (A) to (F) are drawings showing examples of electronic devices. Specific details for implementing the invention

[0026] Hereinafter, embodiments are described with reference to the drawings. However, it is readily understood by those skilled in the art that embodiments can be implemented in many different forms, and that their forms and details can be varied without departing from the intent and scope thereof. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments described below.

[0027] Furthermore, in the configuration of the invention described below, the same reference numerals are commonly used across different drawings for identical parts or parts having the same function, and their repetitive description is omitted. Additionally, when referring to parts having the same function, the hatch pattern is identical, and in some cases, no specific reference numeral is assigned.

[0028] In addition, in each drawing described in this specification, the size, thickness, or area of ​​each component may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0029] In addition, ordinal numbers such as "first," "second," etc. in this specification are attached to avoid confusion of components and are not numerically limited.

[0030] In addition, in this specification, the term EL layer refers to a layer (also called a light-emitting layer) provided between a pair of electrodes of a light-emitting element and comprising at least a light-emitting material, or a laminate comprising a light-emitting layer.

[0031] In addition, in this specification, the term "photoelectric conversion layer" refers to a layer provided between a pair of electrodes of a photodetector and represents at least an active layer or a laminate comprising an active layer. In addition, the term "active layer" refers to a layer having the function of generating electron-hole pairs by absorbing light. In addition, the active layer includes a single layer and a laminate.

[0032] (Embodiment 1)

[0033] In this embodiment, an example of the configuration of a display device of one form of the present invention is described.

[0034] One embodiment of the present invention is a display device having a plurality of pixels arranged in a matrix. Each pixel has one or more light-emitting elements.

[0035] A light-emitting element (also called a light-emitting device) is a device that combines the function of a light-emitting element (also called a light-emitting device) that emits light of a first color and the function of a photoelectric conversion element (also called a photoelectric conversion device) that receives light of a second color. A light-emitting element can also be called a multifunctional element, a multifunctional diode, a light-emitting photodiode, or a bidirectional photodiode.

[0036] When multiple pixels having light-emitting elements are arranged in a matrix, the display device can combine the function of displaying an image and the function of capturing an image. Therefore, a display device of one form of the present invention may also be called a composite device or a multi-functional device.

[0037] When displaying an image using multiple light-emitting elements, it is desirable for the viewing angle characteristics of the display device to be higher as the angle dependence of the brightness and chromaticity of the light emitted from a single light-emitting element decreases. On the other hand, when capturing an image using multiple light-emitting elements, if light is incident from a wide range on a single light-emitting element, the image becomes blurry, making it difficult to obtain a clear image. That is, it is desirable to configure the light-emitting element so that only light is incident from a direction perpendicular to its surface as much as possible.

[0038] However, if the angle range of light incident on the light-emitting element is narrowed, oblique light emitted from the light-emitting element cannot be extracted, and the viewing angle characteristics deteriorate. On the other hand, if the angle range of light emitted from the light-emitting element is widened, light from a wide angle range is incident on the light-emitting element, making it difficult to obtain a clear image. Therefore, when a configuration is used in which both imaging and image display are performed by the light-emitting element, it is difficult to achieve both good viewing angle characteristics and clear image imaging.

[0039] Therefore, one embodiment of the present invention provides a color filter above the light-emitting element (i.e., on the display surface side and the light-receiving surface side of the display device) that transmits a first color of light emitted by the light-emitting element and blocks a second color of light received by the light-emitting element. Additionally, the color filter is provided with an opening that overlaps with the light-emitting region of the light-emitting element. Accordingly, among the first color of light emitted by the light-emitting element, light in a direction substantially perpendicular to the surface of the light-emitting element passes through the opening of the color filter, and light in an oblique direction passes through the color filter and is emitted to the outside. Accordingly, the display device can display an image with excellent viewing angle characteristics. Furthermore, when receiving light with the light-emitting element, light incident obliquely on the surface of the light-emitting element is blocked by the color filter, so only light from a direction substantially perpendicular to the surface of the light-emitting element is incident on the light-emitting element. Accordingly, a clear image can be captured.

[0040] Below, more specific configuration examples will be described with reference to the drawings.

[0041] [Composition Example 1]

[0042] Figure 1 (A) shows a schematic cross-sectional view of a display device (10) of one form of the present invention. The display device (10) has a light-emitting element (20) and a color filter (31) between a substrate (11) and a substrate (12) provided opposite each other.

[0043] A device layer (15) is provided on the substrate (11). The device layer (15) is a layer having circuits or wiring, etc., for driving a light-emitting device (20). For example, the device layer (15) has transistors, capacitive elements, resistive elements, wiring, electrodes, etc.

[0044] The receiving and emitting element (20) has a stacked configuration of a conductive layer (21), an organic layer (22), and a conductive layer (23). The conductive layer (21) functions as a pixel electrode and is electrically connected to a circuit within the element layer (15). It is preferable that the conductive layer (21) has reflectivity toward the light emitted by the receiving and emitting element (20) and the light received by the receiving and emitting element (20). The organic layer (22) has at least an EL layer and a photoelectric conversion layer. The conductive layer (23) functions as a common electrode. It is preferable that the conductive layer (23) has transparency toward the light emitted by the receiving and emitting element (20) and the light received by the receiving and emitting element (20).

[0045] The receiving and emitting element (20) has the function of emitting light of a first color (30R) and the function of receiving light of a second color (30G). Here, it is preferable that the light (30R) is light of a longer wavelength than the light (30G). By doing so, the light (30R) emitted by the receiving and emitting element (20) can be prevented from being absorbed by the photoelectric conversion layer of the receiving and emitting element (20), thereby suppressing the decrease in the luminous efficiency of the receiving and emitting element (20). For example, the receiving and emitting element (20) may be equipped with a function of emitting red light and a device that receives light of a shorter wavelength than this (e.g., green light, blue light, or light of both). Furthermore, one or both of the light emitted by the receiving and emitting element (20) and the light received by the receiving and emitting element (20) are not limited to visible light, but may be infrared light or ultraviolet light.

[0046] Additionally, an insulating layer (41) covering the end of the conductive layer (21) and the element layer (15) is provided. An organic layer (22) is provided covering the upper surface of the insulating layer (41) and the upper surface of the conductive layer (21). Additionally, a conductive layer (23) is provided covering the organic layer (22). In the region surrounded by the insulating layer (41) on the conductive layer (21), the conductive layer (21) and the organic layer (22) are provided in contact. Since the above region is a region that contributes to the light emission and reception of the light-emitting element (20), it is referred to as the light-emitting region (R) below.

[0047] Additionally, an adhesive layer (42) is provided on the conductive layer (23). The adhesive layer (42) has the function of bonding the substrate (11) and the substrate (12). The adhesive layer (42) may also function as a sealing layer that seals the light-emitting element (20).

[0048] A color filter (31) is provided on the side of the light-emitting element (20) of the substrate (12). The color filter (31) has the function of transmitting light (first color light (30R)) emitted by the light-emitting element (20) and blocking light (second color light (30G)) received by the light-emitting element (20). The color filter (31) may have the function of reflecting the second color light (30G), but it is more preferable for it to have the function of absorbing the second color light (30G).

[0049] Additionally, the color filter (31) has an opening (20h) that overlaps with the light-emitting element (20). The opening (20h) of the color filter (31) is provided to overlap with the light-emitting region (R) of the light-emitting element (20) when viewed in a planar view. Additionally, the color filter (31) has a portion that does not overlap with the light-emitting element (20) when viewed in a planar view.

[0050] Here, in the present specification, "when viewed from a plane" refers to the case where the display surface side and the light receiving surface side (e.g., the outer surface of the substrate (12)) of the display device (10) are viewed. Specifically, the case where the view is made from the direction of the normal of the surface opposite to the surface on the substrate (12) where the color filter (31) is provided is referred to as "when viewed from a plane."

[0051] Figure 1 (B) schematically illustrates the state in which a light-emitting element (20) emits light. As shown in Figure 1 (B), light (30R1) emitted from the light-emitting element (20) in a substantially upward direction is emitted to the outside through the opening (20h) of the color filter (31). Meanwhile, light (30R2) emitted from the light-emitting element (20) in an oblique direction passes through the color filter (31) and is emitted to the outside. Therefore, light is emitted from the light-emitting element (20) over a wide angle range.

[0052] Here, there may be a deviation in wavelength between the light emitted from the light-emitting element (20) in a direction perpendicular to the light-emitting surface and the light emitted in an oblique direction. In that case, a deviation in color is observed when viewed from an oblique direction. However, in the display device (10), even when using a light-emitting element (20) having such characteristics, the light emitted in an oblique direction passes through a color filter (31), so the purity is increased, and a secondary effect is that a deviation in color due to a difference in viewing angle is difficult to observe.

[0053] Figure 1 (C) schematically illustrates the state in which light is incident on a light-emitting element (20) from the outside. As shown in Figure 1 (C), light (30G1) incident from a direction substantially perpendicular to the light-emitting element (20) reaches the light-emitting element (20) through the opening (20h) of the color filter (31). Meanwhile, light (30G2) incident from an oblique direction is blocked (absorbed or reflected) by the color filter (31) and does not reach the light-emitting element (20). Furthermore, even if light passes through the opening (20h) of the color filter (31), light with a large angle of incidence (i.e., incident from an oblique direction relative to the surface of the substrate (12), such as light (30G3), does not reach the light-emitting element (20) and therefore does not contribute to the light reception of the light-emitting element (20). Therefore, only light incident from a substantially perpendicular direction is received by the light-emitting element (20). By doing so, it is possible to capture a clear image with less blurriness.

[0054] The further the distance between the color filter (31) and the light-emitting element (20), the narrower the range in which light can be incident on the light-emitting element (20), so that a clear image can be captured.

[0055] [Composition Example 2]

[0056] Figure 2 (A) is a schematic cross-sectional view of a display device (10a) that differs in some configuration from the display device (10). The display device (10a) differs mainly from the display device (10) in that it has a light-blocking layer (32).

[0057] The light-blocking layer (32) is provided on the side of the substrate (12) facing the substrate (11). Figure 2 (A) shows an example in which the light-blocking layer (32) is provided between the substrate (12) and the color filter (31). Additionally, the color filter (31) may be configured to be located between the light-blocking layer (32) and the substrate (12).

[0058] The light-blocking layer (32) can block (absorb or reflect) either the first color light emitted by the light-emitting element (20) or the second color light received by the light-emitting element (20). In particular, it is preferable to use a material that absorbs visible light as the light-blocking layer (32). For example, as the light-blocking layer (32), a black matrix formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye, may be used. Alternatively, as the light-blocking layer (32), a laminate formed by stacking two or more of a red color filter, a green color filter, and a blue color filter may be used.

[0059] The light-blocking layer (32) is located outside the opening (20h) of the color filter (31) when viewed from a planar view. In other words, when viewed from a planar view, the opening (20h) of the color filter (31) is located inside the pair of ends of the light-emitting element (20) of the light-blocking layer (32). At this time, the color filter (31) has a portion that overlaps with the light-blocking layer (32) when viewed from a planar view, and a portion located between the opening (20h) and the light-blocking layer (32) that does not overlap with either the light-blocking layer (32) or the light-emitting element (20).

[0060] Figure 2 (B) schematically illustrates the state in which the light-emitting element (20) emits light. Light (30R2) emitted from the light-emitting element (20) in an oblique direction passes through the color filter (31) from the inner side of the light-blocking layer (32) and is emitted to the outside. The greater the distance between a pair of ends of the light-blocking layer (32), that is, the wider the area that does not overlap with the light-blocking layer (32) of the color filter (31), the wider the range of angles in which light can be emitted from the light-emitting element (20).

[0061] Figure 2 (C) shows a state in which light is incident on a light-emitting element (20) from the outside. Among the light incident from an oblique direction to the light-emitting element (20), the light (30G2) reaching the color filter (31) is blocked by the color filter (31) and does not reach the light-emitting element (20). Additionally, the light (30G4) reaching the light-blocking layer (32) is blocked (absorbed or reflected) by the light-blocking layer (32) and does not reach the light-emitting element (20).

[0062] By providing a light-blocking layer (32), the amount of light that can pass through the color filter (31) and be incident on the light-emitting element (20) can be reduced. In addition, the light-blocking layer (32) can absorb not only light incident from outside the display device (10a) but also a portion of light (also called stray light) that diffuses (guides light) inside the display device (10a) (e.g., adhesive layer (42)). As a result, unnecessary light that can be incident on the light-emitting element (20) can be reduced, thereby reducing noise and enabling the capture of a clear image.

[0063] [Variation Example]

[0064] Figures 1 (A) and 2 (A) show examples in which the width of the opening (20h) of the color filter (31) is formed to be substantially the same as the width of the light-emitting region (R) of the light-emitting element (20), but are not limited thereto.

[0065] In the display device (10b) shown in (A) of Fig. 3, the opening (20h) of the color filter (31) is located inside the light-emitting region (R) of the light-emitting element (20).

[0066] Here, the receiving and emitting region (R) of the receiving and emitting element (20) is defined as the region surrounded by the end of the insulating layer (41) located on the conductive layer (21). In other words, the region where the conductive layer (21) and the organic layer (22) come into contact can also be referred to as the receiving and emitting region (R).

[0067] The color filter (31) of the display device (10b) has a portion that overlaps with the edge portion of the light-emitting region (R) of the light-emitting element (20) when viewed from a planar view. As a result, the opening (20h) of the color filter (31) becomes smaller, thereby further reducing the amount of light irradiated onto the light-emitting element (20) from the outside. Therefore, light incident on the light-emitting element (20) from an oblique direction can be blocked more effectively, allowing for the capture of a clearer image. Additionally, the edge portion of a certain region refers to an area that includes the end portion (also called the contour or outer periphery) of the region and a part of the region that follows the end portion.

[0068] In addition, (B) of FIG. 3 is a schematic cross-sectional view of a display device (10c) formed such that when viewed in a plane, the receiving and emitting region (R) is located inside the opening (20h) of the color filter (31).

[0069] In the display device (10c), when viewed from a planar view, the end of the receiving and emitting region (R) is located inside the opening (20h). Additionally, when viewed from a planar view, an area (gap) is provided between the receiving and emitting region (R) and the color filter (31) where neither the receiving and emitting region (R) nor the color filter (31) is provided.

[0070] By configuring it in this way, the amount of light emitted from the light-emitting element (20) that is emitted to the outside through the opening (20h) of the color filter (31) can be increased. This increases visibility when viewed from the front direction. In addition, by making the width of the opening (20h) of the color filter (31) larger than the width of the light-emitting region (R), the amount of light incident on the light-emitting element (20) can be increased, thereby increasing the sensitivity of the light-emitting element (20) during imaging.

[0071] Additionally, although examples have been shown having a light-blocking layer (32) as the display device (10b) and display device (10c), it may be configured not to have a light-blocking layer (32) as in the display device (10).

[0072] [Composition Example 3]

[0073] Next, using FIG. 4, a more specific configuration example of a display device of one form of the present invention will be described.

[0074] As shown in FIG. 4, the thickness of the substrate (12) is T CS In addition, the distance from the upper surface of the conductive layer (21) of the light-emitting element (20) to the side surface of the substrate (11) of the substrate (12) is T gap Here, the light-blocking layer (32) is provided in contact with the side surface of the substrate (11) of the substrate (12).

[0075] In addition, the width of the opening (20h) of the color filter (31) when viewed in cross-section is W CF It shall be done as. W CF is the distance between a pair of opposing ends in the color filter (31). Also, the width of the light-emitting region of the light-emitting element (20) is W. R ...is done as. Here, W R Ga W CF An example of a larger case is shown. Also, the distance between a pair of opposing ends in the shading layer (32) (also called the opening width of the shading layer (32)) is W BM It shall be done as. W BM Eun W CF and W R A larger one is desirable.

[0076] Here, the opening width W of the shading layer (32) BM It is particularly important because it affects the viewing angle characteristics of the displayed image. Aperture width W BM If this is excessively small, light emitted from the light-emitting element (20) in an oblique direction is blocked, resulting in a display device with a narrow viewing angle. Meanwhile, the opening width W of the light-blocking layer (32)BM If this is excessively large, the occupied area of ​​a single pixel increases, making it difficult to increase the resolution.

[0077] In FIG. 4, the light path of light (30R) emitted in an oblique direction from the end of the light-emitting region of the light-emitting element (20) is schematically shown by a dashed arrow. Additionally, for convenience, the refraction of light between the light-emitting element (20) and the adhesive layer (42) and between the adhesive layer (42) and the color filter (31) is not considered in the illustration.

[0078] Here, among the light (30R) emitted from the light-emitting element (20) and incident on the substrate (12), the light (30R) near the end of the light-blocking layer (32) is the light with the largest angle of incidence with respect to the substrate (12). The maximum value of this angle of incidence is set to θ0, and the angle of refraction at this time is set to θ1. At this time, the angle of incidence of the light emitted from the substrate (12) to the outside (air) is θ1. In addition, the angle of refraction of the light emitted from the substrate (12) to the outside is set to θ2.

[0079] The refractive index of the substrate (12) is n CS , if the external refractive index is 1, the critical angle θ1 at the interface between the substrate (12) and the outside is sinθ1=1 / n CS It becomes the angle that satisfies . For example, n CS The critical angle when α is 1.5 is approximately 41.81°, n CS The critical angle when α is 1.45 is approximately 43.60°, and also n CS The critical angle when α is 1.40 is approximately 45.58°.

[0080] Here, as the refraction angle θ2 of the light emitted outward from the substrate (12) approaches 90°, the viewing angle of the display device approaches 180°, so it can be made into a display device with excellent viewing angle characteristics. Accordingly, the refractive index n of the substrate (12) CS Wow, the angle of incidence θ1 at which the light incident on the substrate (12) is largest is n CSThe opening width W of the shading layer (32) satisfies ×sinθ1 being 0.8 or more and 1.2 or less, preferably 0.9 or more and 1.1 or less, preferably 0.95 or more and 1.0 or less. BM , width W of the receiving and emitting region R , and distance T gap It is desirable to set θ1 to be 41° or more and 48° or less, preferably 42° or more and 46° or less, typically around 45°.

[0081] Also, distance T gap The larger the distance T, the more effectively light incident from an oblique direction can be blocked among the light incident on the light-emitting element (20) from the outside, so it is desirable to be able to capture a clearer image. gap is the width W of the light-emitting region of the light-emitting element (20). R It is desirable to set it to be 0.1 times or more and 10 times or less of, preferably 0.5 times or more and 5 times or less, more preferably 0.6 times or more and 4 times or less, and even more preferably 0.7 times or more and 3 times or less. Here, the width W of the receiving and emitting region. R The upper surface shape of the light-emitting element (20) and the cutting direction may take different values, and the smallest width among them is width W R It can be done.

[0082] Also, the thickness T of the substrate (12) CS The thicker it is, the greater the mechanical strength of the display surface side of the display device. On the other hand, if the substrate (12) is excessively thick, even when the object to be captured is provided in contact with the display surface, the distance between the object to be captured and the light-emitting element (20) increases, so the imaging range of a single light-emitting element (20) widens, and there is a concern that a clear image cannot be obtained. Therefore, the thickness T of the substrate (12) CS Even if it is thick, distance T gap Making it longer makes it easier to obtain a clear image. Therefore, thickness TCS is distance T gap It is 1 to 200 times, preferably 5 to 100 times, more preferably 10 to 80 times, and even more preferably 10 to 50 times.

[0083] [Composition Example 4]

[0084] A display device of one embodiment of the present invention can clearly capture an object in contact with a display surface. For example, fingerprints, palm prints, etc., can be appropriately captured. In addition, it can be used as an image scanner by placing an object to be captured on the display surface and capturing it. Furthermore, it can realize a function as a touch panel by acquiring position information or shape information of an object in contact with the display surface.

[0085] FIG. 5 (A) shows a state in which a scattering body (19) is in contact with the upper surface of a substrate (12). As the scattering body (19), there are various objects that serve as the object of imaging, such as, for example, a finger, a palm, a stylus pen, or a printed document. Preferably, the scattering body (19) is an object that scatters light from its surface. Scattering occurs when light strikes the surface of the scattering body (19) or the vicinity of the surface. For example, scattered light from a printed document or the tip of a stylus pen has little angle dependence and exhibits an isotropic intensity distribution. In addition, scattered light scattered from the surface of the skin, such as a finger or a palm, also exhibits an isotropic intensity distribution. FIG. 5 (A) shows scattered light (30) from multiple points of the scattering body (19). Ref ) was represented by an arrow.

[0086] (A) of FIG. 5 shows scattered light (30) of various orientations Ref The light path of some of the light passing through the opening of the color filter (31) is indicated by a dashed arrow.

[0087] As shown in FIG. 5 (A), light traveling in a direction substantially perpendicular to the contact surface between the scatterer (19) and the substrate (12) reaches the light-emitting element (20) because it is less susceptible to refraction. On the other hand, light traveling in a direction oblique to the contact surface may be refracted at the interface between the substrate (12) and the adhesive layer (42), and may not reach the light-emitting element (20). That is, even when the scatterer (19) is located directly above the light-emitting element (20), the scattered light (30) of the scatterer (19) Ref Not all of it can be received by the light-emitting element (20), and only some of the light is received by the light-emitting element (20). In particular, the thickness T of the substrate (12) CS , or distance T between the substrate (12) and the light-emitting element (20) gap When the light is large, scattered light (30) that can be received by a light-emitting element (20) Ref The decrease in the intensity of ) becomes more pronounced.

[0088] Therefore, as shown in (B) of FIG. 5, it is preferable to provide a functional layer (16) on the surface of the substrate (12). The functional layer (16) is a layer that is transparent and has a lower refractive index than the substrate (12). For the functional layer (16), for example, a resin, an inorganic film (including an oxide film and a nitride film), a metal film, or glass with a low refractive index may be used. The functional layer (16) may be a thin film or a coating formed on the surface of the substrate (12), or it may be a film-shaped, sheet-shaped, or plate-shaped member bonded to the surface of the substrate (12).

[0089] When using a resin in the functional layer (16), it is preferable to use a material including, for example, a fluorine resin such as polytetrafluoroethylene, chlorotrifluoroethylene, polyvinylidene fluoride, or polyvinyl fluoride, or a fluorine resin copolymer such as a perfluoroalkoxyfluorine resin, as this can increase the damage resistance, antifouling properties, or anti-fouling activity of the surface of the substrate (12). Additionally, a siloxane-based resin such as an organic polysiloxane with a low refractive index may be used. Here, a siloxane-based resin refers to a resin containing Si-O-Si bonds formed using a siloxane-based material as a starting material. The siloxane-based resin may use an organic group (for example, an alkyl group or an aryl group) or a fluoro group as a substituent. Additionally, the organic group may have a fluoro group.

[0090] The effect of providing a functional layer (16) between the substrate (12) and the scatterer (19) is explained. As shown in (B) of FIG. 5, light scattered from the surface of the scatterer (19) is refracted at the interface between the functional layer (16) and the substrate (12). At this time, since the refractive index of the substrate (12) is higher than that of the functional layer (16), the direction of the light is refracted so that it approaches a direction perpendicular to the surface of the substrate (12). Then, it is refracted again at the interface between the substrate (12) and the adhesive layer (42) and reaches the side of the substrate (11). In this way, light can be concentrated by refracting the light at the interface between the functional layer (16) and the substrate (12). As a result, as shown in (B) of FIG. 5, the amount of light reaching the light-emitting element (20) can be increased.

[0091] Here, the thickness T of the functional layer (16) f The thinner it is, the more desirable it is. The thickness T of the functional layer (16). f The thinner the layer, the closer the interface between the functional layer (16) for refracting light and the substrate (12) can be to the surface of the scatterer (19) (i.e., the scattering surface). By doing so, scattered light (30) scattered from the surface of the scatterer (19) RefSince the light path of the light going in an oblique direction can be shortened, the amount of light reaching the light-emitting element (20) can be further increased.

[0092] Thickness T of the functional layer (16) f As such, for example, it can be 1 mm or less, preferably 0.5 mm or less, more preferably 0.3 mm or less, even more preferably 0.1 mm or less, and even more preferably 0.05 mm or less. The thickness T of the functional layer (16) f The thinner it is, the more desirable it is, but as a lower limit, it can be, for example, 10 nm or more, 50 nm or more, 100 nm or more, 500 nm or more, 1 μm or more, 5 μm or more, or 10 μm or more. In addition, the upper and lower limits mentioned above can be combined arbitrarily.

[0093] [Composition Example 5]

[0094] Hereinafter, an example of a display device having a light-emitting element and a light-emitting element is described. By providing a light-emitting element that emits a first color of light and receives a second color of light, and a light-emitting element that emits the second color of light, to the display device, the light-emitting element can be used as a light source for imaging. In addition, by providing a light-emitting element that emits a third color of light to the display device, a display device capable of displaying a full-color image can be realized.

[0095] FIG. 6 (A) is a schematic top view of a pixel (60a) placed within the display area of ​​a display device. The pixel (60a) has a light-emitting element (20), a light-emitting element (50G), and a light-emitting element (50B). For example, the light-emitting element (20) may be a light-emitting element that emits red light and receives either or both of green light and blue light. Additionally, the light-emitting element (50G) may be a light-emitting element that emits green light, and the light-emitting element (50B) may be a light-emitting element that emits blue light.

[0096] The pixel (60a) shown in FIG. 6 (A) is a so-called stripe arrangement pixel in which a light-emitting element (20), a light-emitting element (50G), and a light-emitting element (50B) are arranged in this order in the horizontal direction. The light-emitting element (20), the light-emitting element (50G), and the light-emitting element (50B) each have a substantially rectangular shape and are arranged so that their longer sides are parallel to the vertical direction. Within the display area of ​​the display device, multiple pixels (60a) are arranged in a matrix in the vertical and horizontal directions.

[0097] In FIG. 6 (A), a light-blocking layer (32) is provided. Here, the light-blocking layer (32) is provided to surround the light-emitting element (20), the light-emitting element (50G), and the light-emitting element (50B). In other words, the light-blocking layer (32) has an opening that overlaps with the light-emitting element (20), the light-emitting element (50G), and the light-emitting element (50B), respectively. The light-emitting element (20), the light-emitting element (50G), and the light-emitting element (50B) are each positioned inside the opening of the light-blocking layer (32) and are arranged so as not to overlap with the light-blocking layer (32). Additionally, when viewed from a planar perspective, a gap (61) is provided between the light-emitting element (50G) and the light-blocking layer (32) and between the light-emitting element (50B) and the light-blocking layer (32).

[0098] Additionally, a color filter (31) is provided to overlap with a part of the light-emitting element (20). The color filter (31) is provided to overlap with the edge portion of the light-emitting region of the light-emitting element (20). Additionally, another part of the color filter (31) is provided to overlap with the light-blocking layer (32). Furthermore, as described above, the color filter (31) and the light-emitting region of the light-emitting element (20) may be arranged so as not to overlap. At this time, a gap is provided between the end portion of the color filter and the light-emitting region of the light-emitting element (20).

[0099] Fig. 6 (B) shows a pixel configuration different from that described above. In the example shown in Fig. 6 (B), a pixel (60b) having a light-emitting element (20) and a light-emitting element (50G), and a pixel (60c) having a light-emitting element (20) and a light-emitting element (50B) are arranged alternately in the vertical and horizontal directions.

[0100] In FIG. 6 (B), the upper surface shape of the receiving light-emitting element (20), the light-emitting element (50G), and the light-emitting element (50B) is substantially square and is tilted at 45° with respect to the pixel arrangement direction. As a result, the spacing between each of the receiving light-emitting element (20), the light-emitting element (50G), and the light-emitting element (50B) can be increased, so that the thin film constituting the element can be formed with a high yield. In addition, by making such a configuration, pixels can be arranged at a high density, thereby realizing a display device capable of displaying high-definition images.

[0101] Figure 7 (A) is a schematic cross-sectional view of a display device (10d) in which a light-emitting element (20) and a light-emitting element (50G) are provided side by side. Also, the light-emitting element (50B) is omitted here because it can be configured in the same way as the light-emitting element (50G).

[0102] The configuration of the receiving and emitting element (20) may utilize the same material as the display device (10), etc.

[0103] The light-emitting element (50G) has a conductive layer (51), an organic layer (52), and a conductive layer (23). The conductive layer (51) functions as a pixel electrode and is electrically connected to a circuit within the element layer (15). The conductive layer (51) has reflectivity toward light emitted by the light-emitting element (50G). It is preferable that the conductive layer (51) is located on the same plane as the conductive layer (21) of the light-emitting element (20) and is formed by processing the same conductive film. The organic layer (52) is a layer having at least an EL layer. It is preferable that the material of the light-emitting layer included in the EL layer of the organic layer (52) is a different material from the material of the light-emitting layer included in the EL layer of the organic layer (22) of the light-emitting element (20). The conductive layer (23) is used in common for the light-emitting element (20) and the light-emitting element (50G) and functions as a common electrode. The conductive layer (23) has a portion that overlaps with the conductive layer (21) through an organic layer (22) and a portion that overlaps with the conductive layer (51) through an organic layer (52).

[0104] The color filter (31) is provided to surround the light-emitting region of the light-emitting element (20) when viewed in a plane. In FIG. 7 (A), a portion of the color filter (31) is provided to overlap with the light-emitting element (20). Additionally, the color filter (31) is not provided near the light-emitting element (50G).

[0105] Figure 7 (B) is a schematic cross-sectional view of a display device (10e) provided with a light-blocking layer (32).

[0106] In the display device (10e), the light-blocking layer (32) is provided with an opening that overlaps with the light-emitting element (20) and the light-emitting element (50G), respectively. Additionally, the light-blocking layer (32) is provided so as not to overlap with the light-emitting area of ​​the light-emitting element (50G). By doing so, the viewing angle characteristics of the light-emitting element (50G) can be improved even when the thickness of the adhesive layer (42) is thick.

[0107] In addition, (C) of FIG. 7 is a schematic cross-sectional view of a display device (10f) in which the configuration of the light-blocking layer (32) is different from that of the display device (10e).

[0108] The display device (10f) is an example in which the light-blocking layer (32) is not provided near the light-emitting element (50G). The light-blocking layer (32) is located between the light-emitting element (20) and the light-emitting element (50G) when viewed from a planar view. Additionally, although not shown here, the light-blocking layer (32) can be configured to be located between the light-emitting element (20) and the light-emitting element (50B) when viewed from a planar view. Furthermore, the light-blocking layer (32) is not provided between the light-emitting element (50G) and the light-emitting element (50B). By doing so, the viewing angle characteristics of the light-emitting element (50G) (and the light-emitting element (50B)) can be improved.

[0109] In the above, a configuration in which a color filter (31) is placed only on the side of the light-emitting element (20) is shown, but a color filter may also be placed on the sides of the light-emitting element (50G) and the light-emitting element (50B). For the color filter placed in overlap with the light-emitting element, a material that is transparent to the light emitted by the light-emitting element may be used. By placing the color filter in overlap with the light-emitting element, the color purity of the light emitted by the light-emitting element can be increased, thereby realizing a display device with high display quality.

[0110] Figure 8 (A) is a schematic cross-sectional view of a display device (10g). The display device (10g) has a color filter (31G).

[0111] The color filter (31G) is provided on the substrate (12) side, just like the color filter (31). The color filter (31G) has a portion that overlaps with the light-emitting element (50G) when viewed from a planar view. Additionally, it is preferable that the color filter (31G) be provided to include the light-emitting region of the light-emitting element (50G) when viewed from a planar view.

[0112] The color filter (31G) has the function of transmitting light of a color emitted by the light-emitting element (50G). For example, if the light-emitting element (50G) emits green light, a color filter (31G) that transmits green light can be used. In addition, similarly for the light-emitting element (50B), a color filter that transmits light of a color (e.g., blue light) emitted by the light-emitting element (50B) can be used.

[0113] Additionally, as shown in (A) of FIG. 8, the display device (10g) has an area where a color filter (31G) and a color filter (31) overlap between a light-emitting element (20) and a light-emitting element (50G) when viewed from a planar perspective. In this area, the light of the color emitted by the light-emitting element (20) is absorbed (light-blocked) by the color filter (31G), and the light of the color emitted by the light-emitting element (50G) is absorbed (light-blocked) by the color filter (31). Therefore, the area where the two color filters overlap can function as a light-blocking layer.

[0114] Figure 8 (B) is a schematic cross-sectional view of a display device (10h). The display device (10h) differs mainly from the display device (10g) in that the color filter (31G) has an opening.

[0115] The opening of the color filter (31G) may be positioned to overlap with at least the light-emitting region of the light-emitting element (50G). The color filter (31G) may be positioned to overlap with the light-emitting region of the light-emitting element (50G), or the light-emitting region of the light-emitting element (50G) may be positioned inside the opening of the color filter (31G) when viewed from a planar perspective. The positional relationship between the opening of the color filter (31G) and the light-emitting element (50G) may be the same as the positional relationship between the light-emitting region of the light-emitting element (20) and the opening of the color filter (31). The same applies to the light-emitting element (50B).

[0116] In addition, the configuration may be configured to provide a light-blocking layer (32), as shown in the display device (10i) in Fig. 8 (C). Although Fig. 8 (C) shows an example in which the color filter (31G) does not have an opening, it may be configured to have an opening, as in the display device (10h).

[0117] [Composition Example 6]

[0118] Below, an example of a configuration capable of capturing a higher resolution image will be described.

[0119] A schematic cross-sectional view of a display device is shown in FIG. 9 (A). FIG. 9 (A) shows a cross-section including a light-emitting element (20), a light-emitting element (50Ga) and a light-emitting element (50Gb) located on both sides of the light-emitting element (20).

[0120] In (A) of FIG. 9, the width W of the light-emitting region of the light-emitting element (20) R The opening (20h) of the color filter (31) is located further inside. Also, the width W of the opening (20h) of the color filter (31) CF is width W R It is smaller than.

[0121] Also, in FIG. 9 (A), structures (29a) and (29b) in contact with the surface of the substrate (12) are shown. Structures (29a) and (29b) reflect and scatter light emitted by the light-emitting element (50Ga) and the light-emitting element (50Gb). Structures (29a) and (29b) are arranged at a distance equal to or less than the distance between the light-emitting element (20) and the light-emitting element (50Ga) or the light-emitting element (50Gb).

[0122] As shown in (A) of FIG. 9, a portion of the light (30Ga) emitted by the light-emitting element (50Ga) is reflected or scattered by the structure (29a), and a portion of it passes through the opening (20h) to reach the light-emitting element (20). Likewise, a portion of the light (30Gb) emitted by the light-emitting element (50Gb) is reflected or scattered by the structure (29b), and a portion of it passes through the opening (20h) to reach the light-emitting element (20). That is, both reflected light (scattered light) by the structure (29a) and reflected light (scattered light) by the structure (29b) are incident on the light-emitting element (20). Therefore, as shown in (A) of FIG. 9, it can be seen that it is difficult to clearly image a pattern of the same size or smaller than the arrangement spacing of the light-emitting element (20) or the light-emitting element (50Ga).

[0123] Therefore, as shown in (B) of FIG. 9, the opening (20h) of the color filter (31) is configured to be provided on the side close to one of the light-emitting elements (here, the light-emitting element (50Ga)).

[0124] In FIG. 9 (B), the opening (20h) of the color filter (31) is the width W of the light-emitting region of the light-emitting element (20). R It is provided to be located further outward. Furthermore, it is not limited thereto, but it is preferable that the center of the opening (20h) of the color filter (31) be offset from the center of the light-emitting region of the light-emitting element (20). Therefore, the opening (20h) may be located on the inner side of the light-emitting region of the light-emitting element (20), and the opening (20h) and the light-emitting region do not need to overlap.

[0125] As shown in (B) of FIG. 9, by forming an opening (20h) on the side close to the light-emitting element (50Ga), the light (30Gb) emitted by the light-emitting element (50Gb) and reflected or scattered from the structure (29b) is absorbed by the color filter (31) and does not reach the light-emitting element (20). Meanwhile, some of the light (30Ga) emitted by the light-emitting element (50Ga) and reflected or scattered from the structure (29a) passes through the opening (20h) and reaches the light-emitting element (20). That is, only reflected light (scattered light) from the structure (29a) is incident on the light-emitting element (20).

[0126] In this way, by misaligning the center position of the opening (20h) of the color filter (31) with the center position of the light-emitting area of ​​the light-emitting element (20) or the center position of the opening of the light-blocking layer (32), the resolution of the image can be increased and a clear image can be captured. In particular, when the ratio of the specular reflection component to the scattering component among the light reflected or scattered from the object to be captured is high, it exhibits a high effect in improving the resolution of the image.

[0127] The above is a description of the configuration example of the display device.

[0128] A display device of one embodiment of the present invention is a display device capable of realizing both a display with high viewing angle characteristics and the capture of a clear image. In addition, since a display device of one embodiment of the present invention can suitably perform the capture of fingerprints, palm prints, etc., it is possible to add biometric authentication functions such as fingerprint authentication or palm print authentication without adding components to an electronic device to which the display device is applied, thereby realizing a multi-functional electronic device.

[0129] The configuration examples and corresponding drawings, etc. exemplified in this embodiment may be appropriately combined with at least a part thereof with other configuration examples or drawings, etc.

[0130] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0131] (Embodiment 2)

[0132] In this embodiment, an example of the configuration of a display device having a light-emitting element and a light-emitting element of one form of the present invention is described.

[0133] A display device of one form of the present invention has a light-emitting element and a light-emitting element.

[0134] A light-emitting device has the functions of both an organic EL device, which is a light-emitting device, and an organic photodiode, which is a light-receiving device. For example, a light-emitting device can be fabricated by adding an active layer that can be used for an organic photodiode to the stacked structure of an organic EL device. In addition, when fabricating the light-emitting device and the light-emitting device, the increase in the film deposition process can be suppressed by depositing a layer that can be used in common for both the light-emitting device and the light-emitting device in the same process.

[0135] For example, one of a pair of electrodes (common electrode) can be made into a layer common to both the light-emitting element and the light-emitting element. Additionally, it is preferable to make at least one of, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer into a layer common to both the light-emitting element and the light-emitting element. Furthermore, the light-emitting element and the light-emitting element may have the same configuration except for, for example, the presence or absence of an active layer. That is, the light-emitting element can be fabricated simply by adding an active layer to the light-emitting element. In this way, by having a layer common to both the light-emitting element and the light-emitting element, the number of film deposition steps and the number of masks can be reduced, thereby reducing the manufacturing process and manufacturing cost of the display device. Additionally, a display device having the light-emitting element can be fabricated using existing manufacturing equipment and methods for display devices.

[0136] In addition, the layers of a light-emitting device may have different functions depending on whether the light-emitting device functions as a light-receiving device or as a light-emitting device. In this specification, components are named based on their function when the light-emitting device functions as a light-emitting device. For example, the hole injection layer functions as a hole injection layer when the light-emitting device functions as a light-emitting device, and functions as a hole transport layer when the light-emitting device functions as a light-receiving device. Likewise, the electron injection layer functions as an electron injection layer when the light-emitting device functions as a light-emitting device, and functions as an electron transport layer when the light-emitting device functions as a light-receiving device.

[0137] Thus, the display device of the present embodiment has a light-emitting element and a light-emitting element in the display portion. Specifically, the light-emitting element and the light-emitting element are each arranged in a matrix in the display portion. Therefore, in addition to the function of displaying an image, the display portion also has one or both of the imaging function and the sensing function.

[0138] The display unit can be used as an image sensor or a touch sensor, etc. That is, by detecting light from the display unit, it is possible to capture an image or detect an object (such as a finger or pen) that contacts or approaches the display unit. In addition, the display device of the present embodiment can use a light-emitting element as a light source for the sensor. Therefore, since it is not necessary to provide a light-receiving unit and a light source separately from the display device, the number of components of the electronic device can be reduced.

[0139] In the display device of the present embodiment, when an object reflects the light emitted by the light-emitting element having a display part, the light-emitting element can detect the reflected light, so imaging or touch (contact or approach) detection is possible even in a dark place.

[0140] The display device of the present embodiment has the function of displaying an image using a light-emitting element and a light-emitting element. That is, the light-emitting element and the light-emitting element function as display elements.

[0141] It is preferable to use EL devices such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes) as light-emitting devices. Examples of light-emitting materials for EL devices include materials that emit fluorescence (fluorescent materials), materials that emit phosphorescence (phosphorescent materials), materials that exhibit thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence (TADF) materials), and inorganic compounds (quantum dot materials, etc.). Additionally, LEDs such as micro LEDs (Light Emitting Diodes) may be used as light-emitting devices.

[0142] The display device of the present embodiment has the function of detecting light using a light-emitting element. The light-emitting element can detect light of a shorter wavelength than the light emitted by the light-emitting element itself.

[0143] When a light-emitting element is used in an image sensor, the display device of the present embodiment can capture an image using the light-emitting element. For example, the display device of the present embodiment can be used as a scanner.

[0144] For example, data such as fingerprints or palm prints can be acquired through the function of an image sensor. That is, a biometric authentication sensor can be embedded in the display device of the present embodiment. By embedding the biometric authentication sensor in the display device, the number of electronic device components can be reduced compared to the case where the biometric authentication sensor is provided separately from the display device, thereby enabling miniaturization and weight reduction of the electronic device.

[0145] In addition, data such as the user's facial expressions, eye movements, or changes in pupil diameter can be acquired through the function of an image sensor. By interpreting the above data, physical and mental information of the user can be acquired. By changing the output content of one or both of the display and voice based on the above information, the user can safely use, for example, a VR (Virtual Reality) device, an AR (Augmented Reality) device, or an MR (Mixed Reality) device.

[0146] In addition, when a light-emitting element is used in a touch sensor, the display device of the present embodiment can detect the approach or contact of an object using the light-emitting element.

[0147] A light-emitting device functions as a photoelectric conversion device that detects light incident on it and generates electric charge. The amount of electric charge generated is determined by the amount of light incident on the light-emitting device.

[0148] A light-receiving and light-emitting device can be fabricated by adding an active layer of a light-receiving device to the configuration of the light-emitting device. For example, an active layer of a pn-type or pin-type photodiode can be used for the light-receiving and light-emitting device. In particular, it is preferable to use an active layer of an organic photodiode having a layer containing an organic compound for the light-receiving and light-emitting device. Organic photodiodes can be applied to various display devices because they are easy to thin, lightweight, and large-area, and offer a high degree of freedom in shape and design.

[0149] Figures 10 (A) to (D) show cross-sectional views of a display device of one embodiment of the present invention.

[0150] The display device (350A) shown in (A) of FIG. 10 has a layer (353) having a light-emitting element between a substrate (351) and a substrate (359), and a layer (357) having a light-emitting element.

[0151] The display device (350B) shown in (B) of Fig. 10 has a layer (353) having a light-emitting element, a layer (355) having a transistor, and a layer (357) having a light-emitting element between a substrate (351) and a substrate (359).

[0152] The display device (350A) and the display device (350B) have a configuration in which green (G) light and blue (B) light are emitted from a layer (357) having a light-emitting element, and red (R) light is emitted from a layer (353) having a light-emitting element. In addition, in one embodiment of the display device of the present invention, the color of the light emitted by the layer (353) having a light-emitting element is not limited to red.

[0153] The light-emitting element included in the layer (353) having the light-emitting element can detect light incident from outside the display device (350A) or the display device (350B). The light-emitting element can detect, for example, one or both of green (G) light and blue (B) light.

[0154] A display device of one embodiment of the present invention has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting element or one light-emitting element. For example, a configuration having three subpixels (three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M), etc.) or a configuration having four subpixels (four colors of R, G, B, and white (W), or four colors of R, G, B, and Y, etc.) may be applied to the pixel. At least one color subpixel has a light-emitting element. The light-emitting element may be provided in all pixels or in some pixels. Additionally, a single pixel may have a plurality of light-emitting elements.

[0155] The layer (355) having transistors has, for example, a transistor electrically connected to a light-emitting element and a transistor electrically connected to a light-emitting element. The layer (355) having transistors may further have wiring, electrodes, terminals, capacitive elements, resistive elements, etc.

[0156] A display device of one embodiment of the present invention may have a function to detect an object, such as a finger, that is in contact with the display device (Fig. 10 (C)). Or it may have a function to detect an object that approaches (is not in contact with) the display device (Fig. 10 (D)). For example, as shown in Fig. 10 (C) and (D), when a finger (352) that is in contact with or close to the display device (350B) reflects light emitted by a light-emitting element in a layer (357) having a light-emitting element, the light-emitting element of a layer (353) having a light-emitting element detects the reflected light. In this way, it is possible to detect that the finger (352) is in contact with or close to the display device (350B).

[0157] [Pixels]

[0158] Examples of pixels are shown in FIGS. 10 (E) to (G) and FIGS. 11 (A) to (D). Also, the arrangement of subpixels is not limited to the order shown. For example, the positions of subpixel (B) and subpixel (G) may be reversed.

[0159] The pixel shown in (E) of FIG. 10 has a stripe array applied and has a subpixel (MER) that emits red light and has a light-receiving function, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light. In a display device in which the pixel consists of three subpixels R, G, and B, by changing the light-emitting element used in the R subpixel to a light-emitting element, a display device having a light-receiving function in the pixel can be manufactured.

[0160] The pixel shown in (F) of FIG. 10 has a matrix array applied and has a subpixel (MER) that emits red light and has a light-receiving function, a subpixel (G) that emits green light, a subpixel (B) that emits blue light, and a subpixel (W) that emits white light. Even in a display device in which the pixel consists of four subpixels R, G, B, and W, by changing the light-emitting element used in the R subpixel to a light-emitting element, a display device having a light-receiving function in the pixel can be manufactured.

[0161] The pixel shown in (G) of FIG. 10 has a Pentile array applied and has subpixels that emit two colors of light with different combinations depending on the pixel. The upper left pixel and the lower right pixel shown in (G) of FIG. 10 have a subpixel (MER) that emits red light and has a light-receiving function, and a subpixel (G) that emits green light. The lower left pixel and the upper right pixel shown in (G) of FIG. 10 have a subpixel (G) that emits green light and a subpixel (B) that emits blue light. In addition, the shape of the subpixel shown in (G) of FIG. 10 represents the upper surface shape of the light-emitting element or light-emitting element having said subpixel.

[0162] The pixel shown in (A) of FIG. 11 has a subpixel (MER) that has a light receiving function and emits red light, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light. The subpixel (MER) is placed in a different column from the subpixel (G) and the subpixel (B). The subpixel (G) and the subpixel (B) are alternately placed in the same column, with one side provided in an odd row and the other side provided in an even row. Additionally, the subpixel placed in a different column from the subpixels of different colors is not limited to red (R) and may be green (G) or blue (B).

[0163] Figure 11 (B) shows two pixels, and one pixel is composed of three subpixels enclosed by dotted lines. The pixel shown in Figure 11 (B) has a subpixel (MER) that receives red light, a subpixel (G) that receives green light, and a subpixel (B) that receives blue light. In the left pixel shown in Figure 11 (B), the subpixel (G) is placed in the same row as the subpixel (MER), and the subpixel (B) is placed in the same column as the subpixel (MER). In the right pixel shown in Figure 11 (B), the subpixel (G) is placed in the same row as the subpixel (MER), and the subpixel (B) is placed in the same column as the subpixel (G). In the pixel layout shown in (B) of Fig. 11, subpixels (MER), subpixels (G), and subpixels (B) are repeatedly arranged in either the odd or even rows, and subpixels of different colors are arranged in the odd and even rows of each column.

[0164] Fig. 11 (C) is a modified example of the pixel array shown in Fig. 10 (G). The top left and bottom right pixels shown in Fig. 11 (C) have a subpixel (MER) that has a light reception function and a subpixel (G) that shows red light. The bottom left and top right pixels shown in Fig. 11 (C) have a subpixel (MER) that has a light reception function and a subpixel (B) that shows blue light.

[0165] In (G) of FIG. 10, a subpixel (G) that emits green light is provided for each pixel. Meanwhile, in (C) of FIG. 11, a subpixel (MER) that emits red light and has a light-receiving function is provided for each pixel. Since a subpixel with a light-receiving function is provided for each pixel, the configuration shown in (C) of FIG. 11 can perform imaging with higher precision compared to the configuration shown in (G) of FIG. 10. This allows for, for example, an increase in the precision of biometric authentication.

[0166] In addition, the top surface shape of the light-emitting element and the light-emitting element is not particularly limited and can be circular, elliptical, polygonal, or a polygon with rounded corners. Regarding the top surface shape of the light-emitting element of the subpixel (G), (G) in FIG. 10 shows an example of a circular shape, and (C) in FIG. 11 shows an example of a square shape. The top surface shapes of the light-emitting element and the light-emitting element of each color may be different, or may be the same in some or all colors.

[0167] In addition, the aperture ratio of the subpixels of each color may be different, or may be the same for some or all colors. For example, the aperture ratio of the subpixel provided to each pixel (subpixel (G) in (G) of FIG. 10, subpixel (MER) in (C) of FIG. 11) may be smaller than the aperture ratio of the subpixel of another color.

[0168] Fig. 11 (D) is a modified example of the pixel array shown in Fig. 11 (C). Specifically, the configuration of Fig. 11 (D) is obtained by rotating the configuration of Fig. 11 (C) by 45°. Although Fig. 11 (C) was described as having one pixel composed of two subpixels, it can also be considered as having one pixel composed of four subpixels as shown in Fig. 11 (D).

[0169] In Fig. 11 (D), a single pixel is described as being composed of four subpixels enclosed by dotted lines. A single pixel has two subpixels (MER), one subpixel (G), and one subpixel (B). In this way, by having multiple subpixels that have light-receiving functions, a single pixel can perform imaging with high precision. Therefore, the precision of biometric authentication can be increased. For example, the precision of the image can be made twice the square root of the precision of the display.

[0170] A display device having the configuration shown in (C) or (D) of FIG. 11 has p first light-emitting elements (where p is an integer greater than or equal to 2), q second light-emitting elements (where q is an integer greater than or equal to 2), and r light-emitting receiving elements (where r is an integer greater than p and greater than q). p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting elements emits green light, and the other emits blue light. The light-emitting receiving element emits red light and has a light-receiving function.

[0171] For example, when performing touch detection using a light-emitting element, it is desirable that the light emitted from the light source be difficult for the user to see. Since blue light has lower visibility than green light, it is desirable to use a light-emitting element that emits blue light as the light source. Therefore, it is desirable for the light-emitting element to have the function of receiving blue light.

[0172] As described above, a display device of one form of the present invention may apply various arrays of pixels.

[0173] Since the display device of the present embodiment does not require changing the pixel array to provide a light receiving function to the pixels, it is possible to provide one or both of the imaging function and the sensing function to the display unit without reducing the aperture ratio and the precision.

[0174] [Light-emitting diode]

[0175] Examples of stacked structures of light-emitting and receiver elements are shown in (A) to (E) of FIG. 12.

[0176] A light-emitting device has at least an active layer and a light-emitting layer between a pair of electrodes.

[0177] The receiving and emitting device may further have a layer other than the active layer and the emitting layer, which includes a material with high hole injection, a material with high hole transport, a material with high hole blocking, a material with high electron transport, a material with high electron injection, a material with high electron blocking, or a bipolar material (a material with high electron transport and hole transport).

[0178] The light-emitting elements shown in (A) to (C) of FIG. 12 each have a first electrode (180), a hole injection layer (181), a hole transport layer (182), an active layer (183), a light-emitting layer (193), an electron transport layer (184), an electron injection layer (185), and a second electrode (189).

[0179] The first electrode (180) functions as the anode (positive electrode) of the light-emitting device. The second electrode (189) functions as the cathode (negative electrode) of the light-emitting device.

[0180] In addition, the light-emitting elements shown in (A) to (C) of FIG. 12 can each be configured by adding an active layer (183) to the light-emitting element. Therefore, by simply adding a process of forming an active layer (183) to the manufacturing process of the light-emitting element, the light-emitting element can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-emitting element can be formed on the same substrate. Thus, one or both of the imaging function and the sensing function can be provided to the display unit without significantly increasing the manufacturing process.

[0181] The stacking order of the light-emitting layer (193) and the active layer (183) is not limited. FIG. 12 (A) shows an example in which the active layer (183) is provided on the hole transport layer (182) and the light-emitting layer (193) is provided on the active layer (183). FIG. 12 (B) also shows an example in which the light-emitting layer (193) is provided on the hole transport layer (182) and the active layer (183) is provided on the light-emitting layer (193). Additionally, the active layer (183) and the light-emitting layer (193) may be in contact with each other as shown in FIG. 12 (A) and (B).

[0182] As shown in (C) of FIG. 12, it is preferable to have a buffer layer sandwiched between the active layer (183) and the light-emitting layer (193). As the buffer layer, at least one layer among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer may be used. FIG. 12 (C) shows an example in which a hole transport layer (182) is used as the buffer layer.

[0183] By providing a buffer layer between the active layer (183) and the light-emitting layer (193), the transfer of excitation energy from the light-emitting layer (193) to the active layer (183) can be suppressed. Additionally, the optical path length (cavity length) of the micro-resonance (microcavity) structure can be adjusted using the buffer layer. Thus, a high luminous efficiency can be obtained from a light-emitting device having a buffer layer between the active layer (183) and the light-emitting layer (193).

[0184] The light-emitting device shown in (D) of FIG. 12 differs from the light-emitting devices shown in (A) to (C) of FIG. 12 in that it does not have a hole transport layer (182). The light-emitting device does not need to have at least one of a hole injection layer (181), a hole transport layer (182), an electron transport layer (184), and an electron injection layer (185). Additionally, the light-emitting device may have other functional layers, such as a hole block layer and an electron block layer.

[0185] The light-emitting element shown in (E) of FIG. 12 is different from the light-emitting elements shown in (A) to (D) of FIG. 12 in that it does not have an active layer (183) and a light-emitting layer (193), but has a layer (186) that serves as both a light-emitting layer and an active layer.

[0186] As a layer (186) that serves as both a light-emitting layer and an active layer, for example, a layer comprising three materials such as an n-type semiconductor that can be used in the active layer (183), a p-type semiconductor that can be used in the active layer (183), and a light-emitting material that can be used in the light-emitting layer (193) may be used.

[0187] In addition, it is desirable that the absorption band on the lowest energy side of the absorption spectrum of the mixed material of n-type and p-type semiconductors does not overlap with the maximum peak of the emission spectrum (PL spectrum) of the emitting material, and it is even more desirable that they are sufficiently separated.

[0188] In a light-emitting device, a conductive film that transmits visible light is used on the electrode on the light-extracting side. Additionally, it is preferable to use a conductive film that reflects visible light on the electrode on the side that does not extract light.

[0189] When driving a light-emitting device as a light-emitting device, the hole injection layer is a layer that injects holes from the anode into the light-emitting device. The hole injection layer is a layer containing a material with high hole injection properties. As a material with high hole injection properties, a composite material containing a hole transport material and an acceptor material (electron accepting material), or an aromatic amine compound, etc., may be used.

[0190] When driving a light-emitting device as a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. When driving a light-emitting device as a light-receiving device, the hole transport layer is a layer that transports holes generated based on light incident from the active layer to the anode. The hole transport layer is a layer containing a hole-transporting material. As for the hole-transporting material, 1×10⁻⁶ -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. Additionally, materials other than these may be used as long as they have higher hole transport than electron transport. As a hole transport material, materials with high hole transport, such as π-electron excess heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) or aromatic amines (compounds having an aromatic amine backbone), are preferred.

[0191] When driving a light-emitting diode as a light-emitting device, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. When driving a light-emitting diode as a light-receiving device, the electron transport layer is a layer that transports electrons generated based on light incident from the active layer to the cathode. The electron transport layer is a layer containing an electron transportable material. As for the electron transportable material, 1×10⁻⁶ -6 cm 2 Materials having electron mobility greater than or equal to / Vs are preferred. Additionally, materials other than these may be used as long as they have higher electron transport than hole transport. As electron transport materials, materials with high electron transport can be used, such as metal complexes having a quinoline backbone, metal complexes having a benzoquinoline backbone, metal complexes having an oxazole backbone, metal complexes having a thiazole backbone, etc., as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0192] When driving a light-emitting device as a light-emitting device, the electron injection layer is a layer that injects electrons from the cathode into the light-emitting device. The electron injection layer is a layer containing a material with high electron injection properties. Alkali metals, alkaline earth metals, or compounds thereof may be used as materials with high electron injection properties. As materials with high electron injection properties, composite materials containing electron transport materials and donor materials (electron-donating materials) may also be used.

[0193] The light-emitting layer (193) is a layer containing a light-emitting material. The light-emitting layer (193) may have one or more types of light-emitting materials. As the light-emitting material, a material that emits a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is appropriately used. In addition, a material that emits near-infrared light may be used as the light-emitting material.

[0194] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0195] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc.

[0196] Examples of phosphorescent materials include organometallic complexes having a 4H-triazole backbone, a 1H-triazole backbone, an imidazole backbone, a pyrimidine backbone, a pyrazine backbone, or a pyridine backbone (especially iridium complexes), organometallic complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand (especially iridium complexes), platinum complexes, rare earth metal complexes, etc.

[0197] The light-emitting layer (193) may have one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting material (guest material). As one or more types of organic compounds, either or both of hole-transporting materials and electron-transporting materials may be used. Additionally, as one or more types of organic compounds, a positive material or a TADF material may be used.

[0198] The light-emitting layer (193) preferably has, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material, which are combinations that facilitate the formation of an excited composite. By configuring it in this way, light emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from the excited composite to the light-emitting material (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an excited composite that exhibits light emission overlapping with the wavelength of the absorption band on the lowest energy side of the light-emitting material, energy transfer becomes smooth, and light emission can be obtained efficiently. With this configuration, high efficiency, low voltage driving, and long lifespan of the light-emitting device can be realized simultaneously.

[0199] As a combination of materials forming an excited complex, it is desirable that the HOMO level (highest occupied molecular orbital level) of the hole-transporting material is greater than or equal to the HOMO level of the electron-transporting material. It is also desirable that the LUMO level (lowest unoccupied molecular orbital level) of the hole-transporting material is greater than or equal to the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV) measurements.

[0200] The formation of an excited complex can be confirmed, for example, by comparing the emission spectrum of a hole-transporting material, the emission spectrum of an electron-transporting material, and the emission spectrum of a mixed film of these materials, and observing the phenomenon in which the emission spectrum of the mixed film shifts toward the longer wavelength side (or has a new peak on the longer wavelength side) compared to the emission spectrum of each material. Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and the transient PL of the mixed film of these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delay component than the transient PL lifetime of each material. Furthermore, the above-mentioned transient PL may be read as transient electroluminescence (EL). That is, the formation of an excited complex can be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and the transient EL of a film of the same, and observing the difference in transient response.

[0201] The active layer (183) includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors including organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer (193) and the active layer (183) can be formed by the same method (e.g., vacuum deposition), allowing the manufacturing apparatus to be standardized.

[0202] As an n-type semiconductor material having an active layer (183), fullerene (e.g., C 60 , C 70Examples of electron-accepting organic semiconductor materials include fullerene derivatives, etc. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Since fullerenes have deep LUMO levels, their electron acceptivity is very high. Generally, when π-electron conjugation (resonance) expands in a planar manner, as in benzene, electron donorability increases; however, because fullerenes have a spherical shape, electron acceptivity remains high despite the significant expansion of π-electrons. High electron acceptivity is beneficial for photodetectors because charge separation occurs at high speed and efficiently. C 60 , C 70 Both have broad absorption bands in the visible light region, especially C 70 C 60 Compared to that, the π-electron conjugate system is large and has a wide absorption band even in the long wavelength region, so it is desirable.

[0203] In addition, as materials for n-type semiconductors, metal complexes having a quinoline backbone, metal complexes having a benzoquinoline backbone, metal complexes having an oxazole backbone, metal complexes having a thiazole backbone, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc.

[0204] As materials for the p-type semiconductor of the active layer (183), electron-donating organic semiconductor materials such as copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone may be used.

[0205] In addition, materials for p-type semiconductors include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine backbone. In addition, materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, tetracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0206] It is desirable that the HOMO level of the electron-donating organic semiconductor material is shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material. It is also desirable that the LUMO level of the electron-donating organic semiconductor material is shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0207] It is desirable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules of similar shapes tend to aggregate easily, and when molecules of the same type aggregate, carrier transport can be enhanced because the energy levels of their molecular orbitals are close.

[0208] For example, it is preferable that the active layer (183) be formed by co-depositing an n-type semiconductor and a p-type semiconductor.

[0209] The layer (186) serving as both a light-emitting layer and an active layer is preferably formed using the light-emitting material, n-type semiconductor, and p-type semiconductor described above.

[0210] The hole injection layer (181), hole transport layer (182), active layer (183), light-emitting layer (193), electron transport layer (184), electron injection layer (185), and layer (186) that serves as both the light-emitting layer and the active layer may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also include inorganic compounds. Each layer can be formed by a deposition method (including vacuum deposition), a transfer method, a printing method, an inkjet method, a coating method, etc.

[0211] Each layer constituting a receiving and emitting element or a light-emitting element may be a single-layer structure containing a single material (compound), a single-layer structure containing multiple materials, a stacked structure in which two or more layers containing a single material are stacked, a stacked structure in which two or more layers containing multiple materials are stacked, or a stacked structure in which one or more layers containing a single material and one or more layers containing multiple materials are stacked. When forming a layer containing multiple materials by vacuum deposition, either a co-deposition method in which two or more materials are each evaporated or sublimated to form a film, or a premix method in which two or more materials are mixed in advance and then evaporated or sublimated to form a film, may be used. Alternatively, a layer containing three or more materials may be formed by combining the co-deposition method and the premix method.

[0212] Hereinafter, the detailed configuration of the receiving and emitting element and the emitting element of a display device of one embodiment of the present invention will be described using FIG. 13 (A) to FIG. 15 (B).

[0213] A display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to that of a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward the substrate on which a light-emitting element is formed, and a dual emission type that emits light on both sides.

[0214] Figures 13 (A) to 15 (B) describe a top emission type display device as an example.

[0215] [Composition Example 1]

[0216] The display device shown in (A) and (B) of FIG. 13 has a light-emitting element (347B) that emits blue (B) light through a layer (355) having a transistor on a substrate (151), a light-emitting element (347G) that emits green (G) light, and a light-emitting element (347MER) that emits red (R) light and also has a light-receiving function.

[0217] FIG. 13 (A) shows a case where the receiving and emitting element (347MER) functions as a light-emitting element. FIG. 13 (A) shows an example where the light-emitting element (347B) emits blue light, the light-emitting element (347G) emits green light, and the receiving and emitting element (347MER) emits red light.

[0218] Figure 13 (B) shows a case where the light-emitting element (347MER) functions as a light-receiving element. Figure 13 (B) shows an example where the light-emitting element (347MER) detects blue light emitted by the light-emitting element (347B) and green light emitted by the light-emitting element (347G).

[0219] The light-emitting element (347B), the light-emitting element (347G), and the light-emitting element (347MER) each have a pixel electrode (191) and a common electrode (115). In this embodiment, an example is given in which the pixel electrode (191) functions as an anode and the common electrode (115) functions as a cathode.

[0220] In this embodiment, just like with the light-emitting element, the explanation assumes that the pixel electrode (191) functions as the positive electrode and the common electrode (115) functions as the negative electrode. That is, the light-emitting element (347MER) is driven by applying a reverse bias between the pixel electrode (191) and the common electrode (115) so that light incident on the light-emitting element (347MER) is detected to generate charge and can be extracted as current.

[0221] The common electrode (115) is used in common with the light-emitting element (347B), the light-emitting element (347G), and the light-emitting element (347MER).

[0222] The materials and film thickness of the pair of electrodes of the light-emitting element (347B), light-emitting element (347G), and light-emitting element (347MER) can be made the same. By doing so, the manufacturing cost of the display device can be reduced and the manufacturing process can be simplified.

[0223] The configuration of the display device shown in (A) and (B) of FIG. 13 will be explained in detail.

[0224] The light-emitting element (347B) has a buffer layer (192B), a light-emitting layer (193B), and a buffer layer (194B) in that order on the pixel electrode (191). The light-emitting layer (193B) has a light-emitting material that emits blue light. The light-emitting element (347B) has the function of emitting blue light.

[0225] The light-emitting element (347G) has a buffer layer (192G), a light-emitting layer (193G), and a buffer layer (194G) in that order on the pixel electrode (191). The light-emitting layer (193G) has a light-emitting material that emits green light. The light-emitting element (347G) has the function of emitting green light.

[0226] The receiving and emitting element (347MER) has a buffer layer (192R), an active layer (183), a emitting layer (193R), and a buffer layer (194R) in that order on the pixel electrode (191). The emitting layer (193R) has a emitting material that emits red light. The active layer (183) has an organic compound that absorbs light of shorter wavelengths than red light (e.g., one or both of green light and blue light). Additionally, the active layer (183) may use an organic compound that absorbs not only visible light but also ultraviolet light. The receiving and emitting element (347MER) has the function of emitting red light. The receiving and emitting element (347MER) has the function of detecting light emission from at least one of the emitting element (347G) and the emitting element (347B), and it is preferable that it has the function of detecting light emission from both.

[0227] It is preferable that the active layer (183) has an organic compound that is difficult to absorb red light and absorbs light of shorter wavelengths than red light. Accordingly, the receiving and emitting element (347MER) can have the function of efficiently emitting red light and the function of detecting light of shorter wavelengths than red light with high precision. For example, it is preferable to select the material of the active layer (183) so that the absorption spectrum of the organic compound of the active layer (183) and the emission spectrum of the light-emitting material of the light-emitting layer (193R) do not overlap.

[0228] The pixel electrode (191), buffer layer (192R), buffer layer (192G), buffer layer (192B), active layer (183), light-emitting layer (193R), light-emitting layer (193G), light-emitting layer (193B), buffer layer (194R), buffer layer (194G), buffer layer (194B), and common electrode (115) may each have a single-layer structure or a stacked structure.

[0229] In the display device shown in (A) and (B) of FIG. 13, the buffer layer, active layer, and light-emitting layer are layers formed separately for each device.

[0230] The buffer layer (192R), buffer layer (192G), and buffer layer (192B) may each have one or both of a hole injection layer and a hole transport layer. Additionally, the buffer layer (192R), buffer layer (192G), and buffer layer (192B) may have an electron block layer. The buffer layer (194B), buffer layer (194G), and buffer layer (194R) may each have one or both of an electron injection layer and an electron transport layer. Additionally, the buffer layer (194R), buffer layer (194G), and buffer layer (194B) may have a hole block layer. Furthermore, regarding the materials of each layer constituting the light-emitting element, one may refer to the description of each layer constituting the light-emitting element described above.

[0231] [Composition Example 2]

[0232] As shown in (A) and (B) of FIG. 14, the light-emitting element (347B), the light-emitting element (347G), and the light-emitting element (347MER) may have a common layer between a pair of electrodes. By doing so, the light-emitting element can be embedded in the display device without significantly increasing the manufacturing process.

[0233] The light-emitting element (347B), light-emitting element (347G), and light-emitting element (347MER) shown in (A) of FIG. 14 have a common layer (112) and a common layer (114) in addition to the configuration shown in (A) and (B) of FIG. 13.

[0234] The light-emitting element (347B), light-emitting element (347G), and light-emitting element (347MER) shown in (B) of FIG. 14 differ from the configuration shown in (A) and (B) of FIG. 13 in that they do not have buffer layers (192R, 192G, 192B) and buffer layers (194R, 194G, 194B), but have a common layer (112) and a common layer (114).

[0235] The common layer (112) may have one or both of a hole injection layer and a hole transport layer. The common layer (114) may have one or both of an electron injection layer and an electron transport layer.

[0236] The common layer (112) and the common layer (114) may each have a single-layer structure or a stacked structure.

[0237] [Composition Example 3]

[0238] The display device shown in (A) of FIG. 15 is an example in which the stacked structure shown in (C) of FIG. 12 is applied to a light-emitting element (347MER).

[0239] The receiving and emitting element (347MER) has a hole injection layer (181), an active layer (183), a hole transport layer (182R), a light-emitting layer (193R), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0240] The hole injection layer (181), electron transport layer (184), electron injection layer (185), and common electrode (115) are layers common to the light-emitting element (347G) and the light-emitting element (347B).

[0241] The light-emitting element (347G) has a hole injection layer (181), a hole transport layer (182G), a light-emitting layer (193G), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0242] The light-emitting element (347B) has a hole injection layer (181), a hole transport layer (182B), a light-emitting layer (193B), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0243] It is preferable that a microcavity structure be applied to the light-emitting element of the display device of the present embodiment. In addition, it is preferable that a microcavity structure be applied to the light-emitting element. Accordingly, it is preferable that one of the pair of electrodes in the light-emitting element or the light-emitting element be an electrode having transmittance and reflectivity to visible light (a semi-transparent / semi-reflective electrode), and the other be an electrode having reflectivity to visible light (a reflective electrode). By having a microcavity structure in the light-emitting element and the light-emitting element, the light emitted from the light-emitting layer is resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting element or the light-emitting element.

[0244] In addition, the translucent and semi-reflective electrodes may have a stacked structure of a reflective electrode and an electrode that is transparent to visible light (also referred to as a transparent electrode). In the present specification and other sources, the reflective electrode functioning as part of the translucent and semi-reflective electrode is described as a pixel electrode or a common electrode, and the transparent electrode is described as an optical adjustment layer; however, there are cases where the transparent electrode (optical adjustment layer) can also be said to function as a pixel electrode or a common electrode.

[0245] The light transmittance of the transparent electrode shall be 40% or higher. For example, in the light-emitting device, it is preferable to use electrodes in which the transmittance of visible light (light with a wavelength of 400 nm or higher and less than 750 nm) and near-infrared light (light with a wavelength of 750 nm or higher and 1300 nm or lower), respectively, is 40% or higher. In addition, the reflectance of visible light and near-infrared light, respectively, of the semi-transparent and semi-reflective electrodes shall be 10% or higher and 95% or lower, preferably 30% or higher and 80% or lower. The reflectance of visible light and near-infrared light of the reflective electrode shall be 40% or higher and 100% or lower, preferably 70% or higher and 100% or lower. Furthermore, the resistivity of these electrodes shall be 1×10⁻⁶ -2Ω It is desirable to be less than cm.

[0246] The hole transport layer (182B), hole transport layer (182G), and hole transport layer (182R) may each function as an optical adjustment layer. Specifically, it is preferable for the light-emitting element (347B) to adjust the film thickness of the hole transport layer (182B) so that the optical distance between a pair of electrodes becomes an optical distance that strengthens blue light. Similarly, it is preferable for the light-emitting element (347G) to adjust the film thickness of the hole transport layer (182G) so that the optical distance between a pair of electrodes becomes an optical distance that strengthens green light. And it is preferable for the light-emitting element (347MER) to adjust the film thickness of the hole transport layer (182R) so that the optical distance between a pair of electrodes becomes an optical distance that strengthens red light. The layer used as an optical adjustment layer is not limited to the hole transport layer. Also, in the case where the semi-transparent / semi-reflective electrode has a stacked structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes refers to the optical distance between a pair of reflective electrodes.

[0247] [Composition Example 4]

[0248] The display device shown in (B) of FIG. 15 is an example in which the stacked structure shown in (D) of FIG. 12 is applied to the light-emitting element (347MER).

[0249] The receiving and emitting element (347MER) has a hole injection layer (181), an active layer (183), a light-emitting layer (193R), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0250] The hole injection layer (181), electron transport layer (184), electron injection layer (185), and common electrode (115) are layers common to the light-emitting element (347G) and the light-emitting element (347B).

[0251] The light-emitting element (347G) has a hole injection layer (181), a hole transport layer (182G), a light-emitting layer (193G), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0252] The light-emitting element (347B) has a hole injection layer (181), a hole transport layer (182B), a light-emitting layer (193B), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0253] The hole transport layer is provided to the light-emitting element (347G) and the light-emitting element (347B), but not to the light-emitting element (347MER). In this way, in addition to the active layer and the light-emitting layer, there may be a layer provided to only one of the light-emitting element and the light-emitting element.

[0254] Hereinafter, a detailed configuration of a display device of one embodiment of the present invention will be described using FIGS. 16 to 21.

[0255] [Display device (310A)]

[0256] Cross-sectional views of the display device (310A) are shown in (A) and (B) of FIG. 16.

[0257] The display device (310A) has a light-emitting element (190B), a light-emitting element (190G), and a light-emitting element (190MER).

[0258] The light-emitting element (190B) has a pixel electrode (191), a buffer layer (192B), a light-emitting layer (193B), a buffer layer (194B), and a common electrode (115). The light-emitting element (190B) has the function of emitting blue light (321B).

[0259] The light-emitting element (190G) has a pixel electrode (191), a buffer layer (192G), a light-emitting layer (193G), a buffer layer (194G), and a common electrode (115). The light-emitting element (190G) has the function of emitting green light (321G).

[0260] The receiving and emitting element (190MER) has a pixel electrode (191), a buffer layer (192R), an active layer (183), a light-emitting layer (193R), a buffer layer (194R), and a common electrode (115). The receiving and emitting element (190MER) has the function of emitting red light (321R) and the function of detecting light (322).

[0261] FIG. 16 (A) shows a case where the receiving and emitting element (190MER) functions as a light-emitting element. FIG. 16 (A) shows an example where the light-emitting element (190B) emits blue light, the light-emitting element (190G) emits green light, and the receiving and emitting element (190MER) emits red light.

[0262] Figure 16 (B) shows a case where the light-emitting element (190MER) functions as a light-receiving element. Figure 16 (B) shows an example where the light-emitting element (190MER) detects blue light emitted by the light-emitting element (190B) and green light emitted by the light-emitting element (190G).

[0263] The pixel electrode (191) is positioned on the insulating layer (214). The ends of the pixel electrode (191) are covered by a partition (216). Two adjacent pixel electrodes (191) are electrically insulated from each other by the partition (216) (also referred to as being electrically separated).

[0264] An organic insulating film is suitable as the barrier (216). Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The barrier (216) is a layer that transmits visible light. Instead of the barrier (216), a barrier that blocks visible light may be provided.

[0265] The display device (310A) has a light-emitting element (190MER), a light-emitting element (190G), a light-emitting element (190B), and a transistor (342), etc., between a pair of substrates (substrate (151) and substrate (152)).

[0266] The light-emitting element (190MER) has the function of detecting light. Specifically, the light-emitting element (190MER) functions as a photoelectric conversion element that receives light (322) incident from outside the display device (310A) and converts it into an electrical signal. The light (322) may also be light reflected by an object from the light emitted by one or both of the light-emitting element (190G) and the light-emitting element (190B). Additionally, the light (322) may be incident on the light-emitting element (190MER) through a lens.

[0267] The receiving light-emitting element (190MER), the emitting element (190G), and the emitting element (190B) have the function of emitting visible light. Specifically, the receiving light-emitting element (190MER), the emitting element (190G), and the emitting element (190B) function as electroluminescent elements that emit light toward the substrate (152) side by applying a voltage between the pixel electrode (191) and the common electrode (115) (see light (321R), light (321G), light (321B)).

[0268] The buffer layer (192), the light-emitting layer (193), and the buffer layer (194) may also be referred to as an organic layer (a layer containing an organic compound) or an EL layer. It is preferable that the pixel electrode (191) has the function of reflecting visible light. The common electrode (115) has the function of transmitting visible light.

[0269] The pixel electrode (191) is electrically connected to the source or drain of the transistor (342) through an opening provided in the insulating layer (214). The transistor (342) has the function of controlling the driving of a light-emitting element or a light-emitting element.

[0270] It is preferable that at least a portion of the circuit electrically connected to the receiving / emitting element (190MER) be formed using the same material and the same process as the circuit electrically connected to the emitting element (190G) and the emitting element (190B). By doing so, compared to the case where the two circuits are formed separately, the thickness of the display device can be reduced and the manufacturing process can be simplified.

[0271] It is preferable that the receiving and emitting element (190MER), the emitting element (190G), and the emitting element (190B) are each covered with a protective layer (195). In the case of (A) of FIG. 16, the protective layer (195) is provided in contact with the common electrode (115). By providing the protective layer (195), the entry of impurities into the receiving and emitting element (190MER) and the emitting elements of various colors is suppressed, thereby increasing the reliability of the receiving and emitting element (190MER) and the emitting elements of various colors. Additionally, the protective layer (195) and the substrate (152) are bonded by an adhesive layer (142).

[0272] A light-blocking layer (BM) is provided on the side of the substrate (151) of the substrate (152). The light-blocking layer (BM) has openings at positions overlapping with the light-emitting element (190G) and the light-emitting element (190B), and at positions overlapping with the light-emitting element (190MER). Furthermore, in the present specification, the position overlapping with the light-emitting element (190G) or the light-emitting element (190B) specifically refers to a position overlapping with the light-emitting region of the light-emitting element (190G) or the light-emitting element (190B). Likewise, the position overlapping with the light-emitting element (190MER) specifically refers to a position overlapping with the light-emitting region and the light-receiving region of the light-emitting element (190MER).

[0273] As shown in (B) of FIG. 16, the light-emitting element (190MER) can detect light that is reflected by an object from the light-emitting element (190G) or the light-emitting element (190B). However, there are cases where the light from the light-emitting element (190G) or the light-emitting element (190B) is reflected within the display device (310A) and enters the light-emitting element (190MER) without passing through the object. A light-blocking layer (BM) can suppress the influence of such stray light. For example, if a light-blocking layer (BM) is not provided, the light (323) emitted by the light-emitting element (190G) is reflected from the substrate (152), and the reflected light (324) enters the light-emitting element (190MER). By providing a light-blocking layer (BM), the entry of the reflected light (324) into the light-emitting element (190MER) can be suppressed. By doing so, noise can be reduced and the sensitivity of the sensor using the light-emitting element (190MER) can be increased.

[0274] As the light-blocking layer (BM), a material that blocks light emission from a light-emitting element may be used. It is preferable for the light-blocking layer (BM) to absorb visible light. As the light-blocking layer (BM), a black matrix may be formed using, for example, a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light-blocking layer (BM) may have a stacked structure of a red color filter, a green color filter, and a blue color filter.

[0275] Additionally, a color filter (CF) is provided on the side of the substrate (151) of the substrate (152). The color filter (CF) has a portion located inside an opening that overlaps with the light-emitting element (190MER) of the light-blocking layer (BM) when viewed from a planar perspective. Additionally, it has an opening at a position that overlaps with the light-emitting element (190MER). The color filter (CF) has the function of transmitting light (321R) emitted by the light-emitting element (190MER) and blocking (absorbing or reflecting) light (321G) emitted by the light-emitting element (190G) and light (321B) emitted by the light-emitting element (190B).

[0276] [Display device (310B)]

[0277] The display device (310B) shown in (A) of FIG. 17 differs from the display device (310A) in that the light-emitting element (190G), the light-emitting element (190B), and the light-emitting element (190MER) each do not have a buffer layer (192) and a buffer layer (194), but have a common layer (112) and a common layer (114). In addition, in the following description of the display device, the description of configurations similar to the display device described above may be omitted.

[0278] In addition, the stacked structure of the light-emitting element (190B), light-emitting element (190G), and light-emitting element (190MER) is not limited to the configuration shown in the display device (310A, 310B). For example, the stacked structure shown in (A) of FIG. 12 to (B) of FIG. 15 can be appropriately applied to each element.

[0279] [Display device (310C)]

[0280] The display device (310C) shown in (B) of Fig. 17 differs from the display device (310B) in that it does not have a substrate (151) and a substrate (152), but has a substrate (153), a substrate (154), an adhesive layer (155), and an insulating layer (212).

[0281] The substrate (153) and the insulating layer (212) are bonded by an adhesive layer (155). The substrate (154) and the protective layer (195) are bonded by an adhesive layer (142).

[0282] The display device (310C) has a configuration in which an insulating layer (212), a transistor (342), a light-emitting element (190MER), a light-emitting element (190G), and a light-emitting element (190B), etc. formed on a manufacturing substrate are transferred onto a substrate (153). It is preferable that the substrate (153) and the substrate (154) each have flexibility. By doing so, the flexibility of the display device (310C) can be increased. For example, it is preferable to use a resin for the substrate (153) and the substrate (154) respectively.

[0283] As substrates (153) and (154), polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. may each be used. Glass having a thickness sufficient to be flexible may be used for one or both of the substrates (153) and (154).

[0284] The substrate of the display device of the present embodiment may use a film with high optical isotropy. Examples of films with high optical isotropy include triacetylcellulose (TAC, also called cellulose triacetate) resin films, cycloolefin polymer (COP) films, cycloolefin polymer (COC) films, and acrylic resin films.

[0285] Below, a more detailed configuration of a display device of one form of the present invention is described.

[0286] [Display device (100A)]

[0287] FIG. 18 is a perspective view of a display device (100A), and FIG. 19 is a cross-sectional view of a display device (100A).

[0288] The display device (100A) has a configuration in which a substrate (152) and a substrate (151) are joined. In FIG. 18, the substrate (152) is indicated by a dashed line.

[0289] The display device (100A) has a display section (162), a circuit (164), wiring (165), etc. FIG. 18 illustrates an example in which an IC (integrated circuit) (173) and an FPC (172) are mounted on the display device (100A). Therefore, the configuration shown in FIG. 18 can also be described as a display module having a display device (100A), an IC, and an FPC.

[0290] For example, a scan line driving circuit can be used as the circuit (164).

[0291] The wiring (165) has the function of supplying signals and power to the display unit (162) and the circuit (164). The signals and power are input to the wiring (165) from the outside through the FPC (172) or input to the wiring (165) from the IC (173).

[0292] FIG. 18 illustrates an example in which an IC (173) is provided on a substrate (151) by means of a COG (Chip On Glass) method or a COF (Chip On Film) method. The IC (173) may be an IC having, for example, a scan line driving circuit or a signal line driving circuit. Additionally, the display device (100A) and the display module may be configured without providing an IC. Furthermore, the IC may be mounted on an FPC by means of a COF method.

[0293] FIG. 19 shows an example of a cross-section in which a portion of the area including the FPC (172), a portion of the area including the circuit (164), a portion of the area including the display part (162), and a portion of the area including the end part are each cut in the display device (100A) shown in FIG. 18.

[0294] The display device (100A) shown in FIG. 19 has a transistor (201), a transistor (205), a transistor (206), a transistor (207), a light-emitting element (190B), a light-emitting element (190G), a light-emitting element (190MER), etc. between a substrate (151) and a substrate (152).

[0295] The substrate (152) and the insulating layer (214) are bonded by an adhesive layer (142). A solid sealing structure or a hollow sealing structure may be applied to the sealing of the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER). In FIG. 19, the space (143) surrounded by the substrate (152), the adhesive layer (142), and the insulating layer (214) is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer (142) may be provided overlapping with the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER). Additionally, the space (143) surrounded by the substrate (152), the adhesive layer (142), and the insulating layer (214) may be filled with a resin different from that of the adhesive layer (142).

[0296] The light-emitting element (190B) has a stacked structure in the order of a pixel electrode (191), a common layer (112), a light-emitting layer (193B), a common layer (114), and a common electrode (115) from the side of the insulating layer (214). The pixel electrode (191) is connected to a conductive layer (222b) of a transistor (207) through an opening provided in the insulating layer (214). The transistor (207) has the function of controlling the operation of the light-emitting element (190B). The end of the pixel electrode (191) is covered by a partition (216). The pixel electrode (191) includes a material that reflects visible light, and the common electrode (115) includes a material that transmits visible light.

[0297] The light-emitting element (190G) has a stacked structure in which a pixel electrode (191), a common layer (112), a light-emitting layer (193G), a common layer (114), and a common electrode (115) are stacked in that order from the insulating layer (214) side. The pixel electrode (191) is connected to a conductive layer (222b) of a transistor (206) through an opening provided in the insulating layer (214). The transistor (206) has the function of controlling the driving of the light-emitting element (190G).

[0298] The light-emitting element (190MER) has a stacked structure in the order of a pixel electrode (191), a common layer (112), an active layer (183), a light-emitting layer (193R), a common layer (114), and a common electrode (115) from the insulating layer (214) side. The pixel electrode (191) is electrically connected to a conductive layer (222b) of a transistor (205) through an opening provided in the insulating layer (214). The transistor (205) has the function of controlling the operation of the light-emitting element (190MER).

[0299] The light emitted by the light-emitting element (190B), the light-emitting element (190G), and the light-emitting receiving element (190MER) is emitted toward the substrate (152). Additionally, light is incident on the light-emitting receiving element (190MER) through the substrate (152) and the space (143). It is preferable to use a material with high transmittance to visible light for the substrate (152).

[0300] The pixel electrode (191) can be manufactured using the same material and the same process. The common layer (112), the common layer (114), and the common electrode (115) are used in common for the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER). The light-emitting element (190MER) is a configuration in which an active layer (183) is added to the configuration of the light-emitting element that emits red light. Furthermore, the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER) can all have common configurations except for the fact that the configuration of the active layer (183) and the light-emitting layer (193) of each color differs. By doing so, a light-receiving function can be added to the display portion (162) of the display device (100A) without significantly increasing the manufacturing process.

[0301] A light-blocking layer (BM) is provided on the side of the substrate (151) of the substrate (152). The light-blocking layer (BM) has an opening at a position that overlaps with each of the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER). By providing the light-blocking layer (BM), the range in which the light-emitting element (190MER) detects light can be controlled. Additionally, by having the light-blocking layer (BM), it is possible to suppress light from the light-emitting element (190G) or the light-emitting element (190B) directly to the light-emitting element (190MER) without passing through the object. Thus, a sensor with low noise and high sensitivity can be realized.

[0302] Additionally, a color filter (CF) is provided on the side of the substrate (151) of the substrate (152). The color filter (CF) has an opening at a position overlapping with the light-emitting element (190MER).

[0303] The transistors (201), (205), (206), and (207) are all formed on the substrate (151). These transistors can be manufactured using the same material and the same process.

[0304] On the substrate (151), insulating layers (211), insulating layers (213), insulating layers (215), and insulating layers (214) are provided in this order. A portion of the insulating layer (211) functions as the gate insulating layer of each transistor. A portion of the insulating layer (213) functions as the gate insulating layer of each transistor. The insulating layer (215) is provided to cover the transistor. The insulating layer (214) is provided to cover the transistor and functions as a flattening layer. Furthermore, the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.

[0305] It is preferable to use a material that is difficult for impurities, such as water or hydrogen, to diffuse into at least one of the insulating layers covering the transistor. By doing so, the insulating layer can function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be increased.

[0306] It is preferable to use an inorganic insulating film for each of the insulating layer (211), insulating layer (213), and insulating layer (215). For example, inorganic insulating films such as silicon nitride, silicon nitride, silicon oxide, silicon nitride, aluminum oxide, and aluminum nitride may be used. Additionally, hafnium oxide, hafnium nitride, hafnium nitride, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may be used. Furthermore, two or more of the above-described insulating films may be stacked and used. Additionally, a lower film may be provided between the substrate (151) and the transistor. The above-described inorganic insulating film may also be used.

[0307] Here, organic insulating films often have lower barrier properties compared to inorganic insulating films. Therefore, it is desirable for the organic insulating film to have an opening near the end of the display device (100A). This prevents impurities from entering through the organic insulating film from the end of the display device (100A). Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display device (100A), so that the organic insulating film is not exposed at the end of the display device (100A).

[0308] An organic insulating film is suitable for the insulating layer (214) that functions as a flattening layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins.

[0309] In the region (228) shown in FIG. 19, an opening is formed in the insulating layer (214). Thus, even when an organic insulating film is used in the insulating layer (214), it is possible to suppress the entry of impurities into the display part (162) from the outside through the insulating layer (214). Therefore, the reliability of the display device (100A) can be increased.

[0310] The transistor (201), transistor (205), transistor (206), and transistor (207) have a conductive layer (221) that functions as a gate, an insulating layer (211) that functions as a gate insulating layer, a conductive layer (222a) and a conductive layer (222b) that functions as a source and drain, a semiconductor layer (231), an insulating layer (213) that functions as a gate insulating layer, and a conductive layer (223) that functions as a gate. Here, the same hatch pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer (211) is located between the conductive layer (221) and the semiconductor layer (231). The insulating layer (213) is located between the conductive layer (223) and the semiconductor layer (231).

[0311] The structure of the transistor in the display device of the present embodiment is not particularly limited. For example, a planar type transistor, a stagger type transistor, an inverse stagger type transistor, etc., may be used. In addition, either a top-gate type or a bottom-gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed.

[0312] The transistors (201), (205), (206), and (207) are configured such that the semiconductor layer in which the channel is formed is closed by two gates. The transistors may be driven by connecting the two gates and supplying the same signal to them. Alternatively, the threshold voltage of the transistor may be controlled by supplying a potential to one of the two gates to control the threshold voltage and supplying a potential to the other gate to drive it.

[0313] The crystallinity of the semiconductor material used in the transistor is not particularly limited, and any of amorphous semiconductors, single-crystal semiconductors, and crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having crystalline regions in some parts) may be used. Using a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0314] It is preferable for the semiconductor layer of the transistor to be a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may be silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0315] The semiconductor layer preferably comprises, for example, indium, M (M is one or more types selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more types selected from aluminum, gallium, yttrium, and tin.

[0316] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also described as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, gallium, zinc, and tin. Alternatively, it is preferable to use an oxide containing zinc.

[0317] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide be greater than or equal to the atomic ratio of M. As the atomic ratio of metallic elements in such In-M-Zn oxides, compositions such as In:M:Zn=1:1:1 or near, In:M:Zn=1:1:1.2 or near, In:M:Zn=2:1:3 or near, In:M:Zn=3:1:2 or near, In:M:Zn=4:2:3 or near, In:M:Zn=4:2:4.1 or near, In:M:Zn=5:1:3 or near, In:M:Zn=5:1:6 or near, In:M:Zn=5:1:7 or near, In:M:Zn=5:1:8 or near, In:M:Zn=10:1:3 or near, In:M:Zn=6:1:6 or near Examples include the nearby composition, In:M:Zn=5:2:5, or the nearby composition. Furthermore, the nearby composition refers to a range of ±30% of the desired atomic ratio.

[0318] For example, when the atomic ratio is stated as In:Ga:Zn=4:2:3 or a composition in the vicinity thereof, it includes cases where, when In is set to 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. Also, when the atomic ratio is stated as In:Ga:Zn=5:1:6 or a composition in the vicinity thereof, it includes cases where, when In is set to 5, Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. Also, when the atomic ratio is stated as In:Ga:Zn=1:1:1 or a composition in the vicinity thereof, it includes cases where, when In is set to 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0319] The transistors of the circuit (164) and the transistors of the display unit (162) may have the same structure or different structures. The structures of the multiple transistors of the circuit (164) may all be the same or there may be two or more types. Likewise, the structures of the multiple transistors of the display unit (162) may all be the same or there may be two or more types.

[0320] A connection portion (204) is provided in an area of ​​the substrate (151) that does not overlap with the substrate (152). In the connection portion (204), wiring (165) is electrically connected to the FPC (172) through a conductive layer (166) and a connection layer (242). On the upper surface of the connection portion (204), a conductive layer (166) obtained by processing a conductive film identical to the pixel electrode (191) is exposed. By doing so, the connection portion (204) and the FPC (172) can be electrically connected through the connection layer (242).

[0321] Various optical components may be arranged on the outer side of the substrate (152). Examples of optical components include a polarizing plate, a phase difference plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-concentrating film. Additionally, on the outer side of the substrate (152), an antistatic film that suppresses dust adhesion, a water-repellent film that makes it difficult for contamination to adhere, a hard coat film that suppresses damage from use, and a shock-absorbing layer may be arranged.

[0322] The substrate (151) and the substrate (152) may each be made of glass, quartz, ceramic, sapphire, resin, etc. If a flexible material is used for the substrate (151) and the substrate (152), the flexibility of the display device can be increased.

[0323] As the adhesive layer, various types of curing adhesives may be used, such as photo-curing adhesives like UV-curing adhesives, reaction-curing adhesives, heat-curing adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, materials with low moisture permeability, such as epoxy resin, are preferred. Additionally, a two-component mixed resin may be used. Furthermore, an adhesive sheet may be used.

[0324] Anisotropic conductive film (ACF), anisotropic conductive paste (ACP), etc. can be used as the connection layer.

[0325] Materials that can be used in the conductive layer, such as the gate, source, and drain of a transistor, as well as various wirings and electrodes constituting a display device, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys having the said metals as the main component. A film containing these materials can be used as a single layer or as a stacked structure.

[0326] In addition, as a conductive material having light transparency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene may be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing said metal materials may be used. Alternatively, nitrides of said metal materials (e.g., titanium nitride) may be used. Furthermore, when using metal materials or alloy materials (or their nitrides), it is desirable to make them thin enough to have light transparency. In addition, a laminated film of said materials may be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is desirable because it can increase conductivity. These may also be used as conductive layers such as various wirings and electrodes constituting a display device, or as conductive layers (conductive layers functioning as pixel electrodes or common electrodes, etc.) of light-emitting elements and light-emitting elements.

[0327] Insulating materials that can be used for each insulating layer include, for example, resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon nitride, silicon nitride, silicon nitride, and aluminum oxide.

[0328] [Display device (100B)]

[0329] FIG. 20 is a cross-sectional view of a display device (100B).

[0330] The display device (100B) differs mainly from the display device (100A) in that it has a protective layer (195). A detailed description of the configuration of the display device (100A) is omitted.

[0331] By providing a protective layer (195) covering the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER), impurities such as water can be suppressed from entering the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER), and the reliability of the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER) can be increased.

[0332] In the region (228) near the end of the display device (100B), it is preferable for the insulating layer (215) and the protective layer (195) to come into contact with each other through the opening of the insulating layer (214). In particular, it is preferable for the inorganic insulating film of the insulating layer (215) and the inorganic insulating film of the protective layer (195) to come into contact with each other. By doing so, it is possible to suppress the entry of impurities into the display part (162) from the outside through the organic insulating film. Thus, the reliability of the display device (100B) can be increased.

[0333] The protective layer (195) may be a single layer or a laminated structure, and for example, the protective layer (195) may be a three-layer structure having an inorganic insulating layer on the common electrode (115), an organic insulating layer on the inorganic insulating layer, and an inorganic insulating layer on the organic insulating layer. In this case, it is preferable to extend the end of the inorganic insulating film outwardly beyond the end of the organic insulating film.

[0334] In addition, a lens may be provided in an area overlapping with the light-emitting element (190MER). By doing so, the sensitivity and precision of the sensor using the light-emitting element (190MER) can be increased.

[0335] It is preferable that the lens has a refractive index of 1.3 or higher and 2.5 or lower. The lens may be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin may be used for the lens. Additionally, a material containing at least one of an oxide and a sulfide may be used for the lens.

[0336] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, resins containing sulfur, etc., can be used in lenses. Alternatively, a material comprising a resin and nanoparticles of a material with a higher refractive index than the resin can be used in lenses. Titanium oxide or zirconium oxide, etc., can be used as nanoparticles.

[0337] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or oxides containing indium, gallium, and zinc, etc., can be used in the lens. Or zinc sulfide, etc., can be used in the lens.

[0338] In addition, in the display device (100B), the protective layer (195) and the substrate (152) are bonded by an adhesive layer (142). The adhesive layer (142) is provided overlapping with the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190MER), respectively, and a solid sealing structure is applied to the display device (100B).

[0339] [Display device (100C)]

[0340] (A) of FIG. 21 is a cross-sectional view of a display device (100C).

[0341] The display device (100C) has a transistor structure different from the display device (100B).

[0342] The display device (100C) has transistors (208), transistor (209), and transistor (210) on a substrate (153).

[0343] The transistor (208), transistor (209), and transistor (210) have a conductive layer (221) functioning as a gate, an insulating layer (211) functioning as a gate insulating layer, a semiconductor layer having a channel forming region (231i) and a pair of low-resistance regions (231n), a conductive layer (222a) connected to one of the pair of low-resistance regions (231n), a conductive layer (222b) connected to the other of the pair of low-resistance regions (231n), an insulating layer (225) functioning as a gate insulating layer, a conductive layer (223) functioning as a gate, and an insulating layer (215) covering the conductive layer (223). The insulating layer (211) is located between the conductive layer (221) and the channel forming region (231i). The insulating layer (225) is located between the conductive layer (223) and the channel forming region (231i).

[0344] The conductive layer (222a) and the conductive layer (222b) are each connected to a low-resistance region (231n) through an opening provided in the insulating layer (225) and the insulating layer (215). One of the conductive layer (222a) and the conductive layer (222b) functions as a source, and the other functions as a drain.

[0345] The pixel electrode (191) of the light-emitting element (190G) is electrically connected to one of the pair of low-resistance regions (231n) of the transistor (208) through the conductive layer (222b).

[0346] The pixel electrode (191) of the light-emitting element (190MER) is electrically connected to the other side of a pair of low-resistance regions (231n) of the transistor (209) through a conductive layer (222b).

[0347] FIG. 21 (A) illustrates an example in which an insulating layer (225) covers the upper and side surfaces of a semiconductor layer. Meanwhile, in the transistor (202) shown in FIG. 21 (B), the insulating layer (225) overlaps with the channel forming region (231i) of the semiconductor layer (231) but does not overlap with the low-resistance region (231n). For example, the structure shown in FIG. 21 (B) can be fabricated by processing the insulating layer (225) using a conductive layer (223) as a mask. In FIG. 21 (B), an insulating layer (215) is provided by covering the insulating layer (225) and the conductive layer (223), and the conductive layer (222a) and the conductive layer (222b) are connected to the low-resistance region (231n) through the opening of the insulating layer (215). Additionally, an insulating layer (218) covering the transistor may be provided.

[0348] Also, the display device (100C) differs from the display device (100B) in that it does not have a substrate (151) and a substrate (152), but has a substrate (153), a substrate (154), an adhesive layer (155), and an insulating layer (212).

[0349] The substrate (153) and the insulating layer (212) are bonded by an adhesive layer (155). The substrate (154) and the protective layer (195) are bonded by an adhesive layer (142).

[0350] The display device (100C) has a configuration in which an insulating layer (212), a transistor (208), a transistor (209), a transistor (210), a light-emitting element (190MER), and a light-emitting element (190G), etc. formed on a manufacturing substrate are transferred onto a substrate (153). It is preferable that the substrate (153) and the substrate (154) each have flexibility. By doing so, the flexibility of the display device (100C) can be increased.

[0351] In the insulating layer (212), an inorganic insulating film that can be used for the insulating layer (211), insulating layer (213), and insulating layer (215) may be used.

[0352] As described above, in the display device of the present embodiment, a light-emitting element is provided instead of a light-emitting element in a subpixel representing a certain color. Since the light-emitting element serves as both a light-emitting element and a light-receiving element, a light-receiving function can be provided to the pixel without increasing the number of subpixels included in the pixel. Furthermore, a light-receiving function can be provided to the pixel without reducing the precision of the display device or the aperture ratio of each subpixel.

[0353] The configuration examples and corresponding drawings, etc. exemplified in this embodiment may be appropriately combined with at least a part thereof with other configuration examples or drawings, etc.

[0354] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0355] (Embodiment 3)

[0356] In this embodiment, a metal oxide (also called an oxide semiconductor) that can be used in the OS transistor described in the previous embodiment is described.

[0357] It is preferable that the metal oxide contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition to these, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. In addition, it may contain one or more types selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0358] In addition, metal oxides can be formed by chemical vapor deposition (CVD) methods such as sputtering, metal organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0359] Classification of Crystal Structures

[0360] Examples of crystal structures of oxide semiconductors include amorphous (including completely amorphous), c-axis-aligned crystalline (CAAC), nanocrystalline (nc), cloud-aligned composite (CAC), single crystal, and polycrystalline.

[0361] In addition, the crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectra. For example, it can be evaluated using XRD spectra obtained by GIXD (Grazing-Incidence XRD) measurements. The GIXD method is also known as the thin film method or the Seemann-Bohlin method.

[0362] For example, in a quartz glass substrate, the peak shapes of the XRD spectrum are nearly symmetrical. On the other hand, in an IGZO film having a crystalline structure, the peak shapes of the XRD spectrum are asymmetrical. The asymmetrical shape of the XRD spectrum peaks indicates the presence of crystals within the film or substrate. In other words, if the peak shapes of the XRD spectrum are not symmetrical, the film or substrate cannot be considered to be in an amorphous state.

[0363] Furthermore, the crystal structure of a film or substrate can be evaluated using diffraction patterns (also known as nano-beam electron diffraction patterns) observed via Nano Beam Electron Diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. In contrast, a spot-shaped pattern is observed in the diffraction pattern of an IGZO film deposited at room temperature, rather than a halo. Therefore, it is presumed that the IGZO film deposited at room temperature is in an intermediate state—neither crystalline nor amorphous—and thus cannot be concluded to be in an amorphous state.

[0364] Structure of Oxide Semiconductors

[0365] In addition, oxide semiconductors may be classified differently from the above when focusing on their structure. For example, oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Furthermore, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, a-like OS (amorphous-like oxide semiconductor), amorphous oxide semiconductors, etc.

[0366] Here, the aforementioned CAAC-OS, nc-OS, and a-like OS are explained in detail.

[0367] [CAAC-OS]

[0368] CAAC-OS is an oxide semiconductor having multiple crystal regions, wherein the c-axis in the multiple crystal regions is oriented in a specific direction. Furthermore, the specific direction refers to the thickness direction of the CAAC-OS film, the normal direction of the surface to be formed of the CAAC-OS film, or the normal direction of the surface of the CAAC-OS film. Additionally, a crystal region is a region in which the atomic arrangement has periodicity. Furthermore, if the atomic arrangement is considered as a lattice arrangement, the crystal region is also a region in which the lattice arrangement is aligned. Furthermore, CAAC-OS has a region in which multiple crystal regions are connected in the direction of the ab plane, and this region may have deformation. Furthermore, deformation refers to the part in the region where multiple crystal regions are connected in which the direction of the lattice arrangement changes between a region in which the lattice arrangement is aligned and another region in which the lattice arrangement is aligned. In other words, CAAC-OS is an oxide semiconductor that has a c-axis orientation and does not have a clear orientation in the direction of the ab plane.

[0369] In addition, each of the above-mentioned multiple crystal regions is composed of one or more microcrystalline crystals (crystals with a maximum diameter of less than 10 nm). When a crystal region is composed of a single microcrystalline crystal, the maximum diameter of the crystal region is less than 10 nm. In addition, when a crystal region is composed of multiple microcrystalline crystals, the size of the crystal region may be several tens of nm.

[0370] In addition, in In-M-Zn oxide (where element M is one or more types selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M, Zn) layer) are stacked. In addition, indium and element M can be substituted for each other. Therefore, indium may be included in the (M, Zn) layer. In addition, element M may be included in the In layer. In addition, Zn may be included in the In layer. The above layered structure is observed as a lattice structure, for example, in a high-resolution TEM (Transmission Electron Microscope) image.

[0371] For example, when performing structural analysis of a CAAC-OS film using an XRD device, in out-of-plane XRD measurements using θ / 2θ scans, a peak indicating c-axis orientation is detected at 2θ = 31° or nearby. In addition, the position of the peak indicating c-axis orientation (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0372] In addition, for example, multiple spots are observed in the electron beam diffraction pattern of a CAAC-OS film. Furthermore, some spots and other spots are observed at point-symmetric positions with the spot of the incident electron beam that has passed through the sample (also called the direct spot) as the center of symmetry.

[0373] When observing the crystal region from the aforementioned specific direction, the lattice arrangement within the crystal region is fundamentally a hexagonal lattice; however, the unit cell is not limited to a regular hexagon and may be non-regular hexagonal. Furthermore, the deformation may result in lattice arrangements such as pentagons or heptagons. Additionally, in CAAC-OS, distinct grain boundaries cannot be observed even near deformation. In other words, it can be seen that the formation of grain boundaries is suppressed by the deformation of the lattice arrangement. This is thought to be because CAAC-OS allows for deformation due to factors such as the uneven arrangement of oxygen atoms in the ab plane direction or changes in interatomic bond distances caused by the substitution of metal atoms.

[0374] Furthermore, crystal structures in which distinct grain boundaries are observed are so-called polycrystalline. Grain boundaries act as recombination centers, and carrier trapping is highly likely to cause a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which distinct grain boundaries are not observed, is a type of crystalline oxide with a crystal structure suitable for the semiconductor layer of a transistor. Additionally, to construct CAAC-OS, a composition including Zn is desirable. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the formation of grain boundaries more effectively than In oxide.

[0375] CAAC-OS is an oxide semiconductor with high crystallinity in which distinct grain boundaries are not observed. Therefore, it can be said that the degradation of electron mobility caused by grain boundaries is unlikely to occur in CAAC-OS. Furthermore, since the crystallinity of oxide semiconductors can degrade due to the incorporation of impurities or the formation of defects, CAAC-OS can be described as an oxide semiconductor with low levels of impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS exhibit stable physical properties. Therefore, oxide semiconductors with CAAC-OS are resistant to heat and highly reliable. Additionally, CAAC-OS remains stable even under high temperatures during the manufacturing process (so-called thermal budget). Thus, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0376] [nc-OS]

[0377] nc-OS exhibits periodicity in its atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS possesses microcrystalline structures. Furthermore, since the size of these microcrystalline structures is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm, they are also referred to as nanocrystalline structures. Additionally, nc-OS does not exhibit regularity in crystal orientation between different nanocrystalline structures. Consequently, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be indistinguishable from α-like OS and amorphous oxide semiconductors. For example, when performing structural analysis of an nc-OS film using an XRD device, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scans. In addition, when electron beam diffraction (also called limited-field electron beam diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of a nanocrystal (e.g., 50 nm or more), a diffraction pattern such as a halo pattern is observed. On the other hand, when electron beam diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than that of a nanocrystal (e.g., 1 nm or more and 30 nm or less), an electron beam diffraction pattern is obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0378] [a-like OS]

[0379] a-like OS is an oxide semiconductor with a structure intermediate between nc-OS and amorphous oxide semiconductors. a-like OS possesses voids or low-density regions. In other words, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Additionally, a-like OS has a higher hydrogen concentration within the film compared to nc-OS and CAAC-OS.

[0380] <<Composition of Oxide Semiconductors>>

[0381] Next, the aforementioned CAC-OS will be explained in detail. Furthermore, CAC-OS concerns the material composition.

[0382] [CAC-OS]

[0383] CAC-OS is a composition of a material in which, for example, elements constituting a metal oxide are localized in sizes ranging from 0.5 nm to 10 nm, preferably from 1 nm to 3 nm, or in the vicinity thereof. Additionally, below, a state in which one or more metal elements are localized in a metal oxide and regions containing said metal elements are mixed in sizes ranging from 0.5 nm to 10 nm, preferably from 1 nm to 3 nm, or in the vicinity thereof is also referred to as a mosaic pattern or a patch pattern.

[0384] In addition, CAC-OS is a composition in which the material is separated into a first region and a second region to form a mosaic pattern, and the first region is distributed within the film (hereinafter also referred to as a cloud phase). That is, CAC-OS is a composite metal oxide having a composition in which the first region and the second region are mixed.

[0385] Here, the atomic number ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is greater than [In] in the composition of the CAC-OS film. Also, the second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film. Or, for example, the first region is a region where [In] is greater than [In] in the second region and [Ga] is smaller than [Ga] in the second region. Also, the second region is a region where [Ga] is greater than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0386] Specifically, the first region is a region in which indium oxide, indium zinc oxide, etc. are the main components. Also, the second region is a region in which gallium oxide, gallium zinc oxide, etc. are the main components. That is, the first region can be rephrased as a region in which In is the main component. Also, the second region can be rephrased as a region in which Ga is the main component.

[0387] In addition, there are cases where a clear boundary cannot be observed between the first region and the second region.

[0388] Furthermore, CAC-OS in In-Ga-Zn oxide refers to a material composition comprising In, Ga, Zn, and O, in which regions are predominantly composed of Ga and regions predominantly composed of In, with these regions existing randomly in a mosaic pattern. Therefore, it is presumed that CAC-OS possesses a structure in which metal elements are non-uniformly distributed.

[0389] CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not intentionally heated. In addition, when forming CAC-OS by a sputtering method, it is preferable to use one or more selected from inert gas (typically argon), oxygen gas, and nitrogen gas as the film-forming gas. Furthermore, it is desirable for the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation to be as low as possible, for example, it is desirable to have the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be 0% or more and less than 30%, preferably 0% or more and less than 10%.

[0390] In addition, for example, in the CAC-OS of In-Ga-Zn oxide, it can be confirmed by EDX mapping obtained using Energy Dispersive X-ray Spectroscopy (EDX) that it has a structure in which a region with In as the main component (first region) and a region with Ga as the main component (second region) are localized and mixed.

[0391] Here, the first region is a region with higher conductivity than the second region. That is, the conductivity of the metal oxide is manifested by carrier flow in the first region. Therefore, by distributing the first region in a cloud-like manner within the metal oxide, a high electric field-effect mobility (μ) can be realized.

[0392] On the other hand, the second region is a region with higher insulation properties compared to the first region. That is, by distributing the second region within the metal oxide, leakage current can be suppressed.

[0393] Therefore, when CAC-OS is used in a transistor, the conductivity attributed to the first region and the insulation attributed to the second region act complementarily, thereby imparting a switching function (On / Off function) to the CAC-OS. In other words, CAC-OS possesses a conductive function in part of the material, an insulating function in part of the material, and a semiconductor function throughout the entire material. By separating the conductive and insulating functions, both capabilities can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on It is possible to realize high electric field effect mobility (μ) and good switching operation.

[0394] Furthermore, transistors using CAC-OS have high reliability. Therefore, CAC-OS is optimal for various semiconductor devices, including display devices.

[0395] Oxide semiconductors take various structures, and each has different characteristics. An oxide semiconductor of one embodiment of the present invention may include two or more types among amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0396] Transistor containing oxide semiconductor

[0397] Next, the case where the above oxide semiconductor is used in a transistor will be explained.

[0398] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility can be realized. In addition, a transistor with high reliability can be realized.

[0399] It is desirable to use oxide semiconductors with a low carrier concentration in transistors. For example, the carrier concentration of an oxide semiconductor is 1×10⁻⁶ 17 cm -3 Below, preferably 1×10 15 cm -3 Below, more preferably 1×10 13 cm -3 Below, more preferably 1×10 11 cm -3 Below, more preferably 1×10 10 cm -3 Less than and 1×10 -9 cm -3 That is all. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, it is desirable to lower the impurity concentration within the oxide semiconductor film and lower the defect level density. In this specification and other contexts, a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Additionally, an oxide semiconductor with a low carrier concentration may be referred to as high-purity intrinsic or an oxide semiconductor of substantially high-purity intrinsic.

[0400] In addition, high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor films have a low defect level density, so the trap level density may also be low.

[0401] Furthermore, charges trapped in the trap levels of oxide semiconductors take a long time to dissipate and sometimes act like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with high trap level density may experience unstable electrical characteristics.

[0402] Therefore, to stabilize the electrical characteristics of a transistor, it is effective to reduce the impurity concentration within the oxide semiconductor. Furthermore, to reduce the impurity concentration within the oxide semiconductor, it is desirable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0403] Impurities

[0404] Here, the influence of each impurity in the oxide semiconductor is explained.

[0405] When silicon or carbon, which are Group 14 elements, are included in an oxide semiconductor, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by Secondary Ion Mass Spectrometry (SIMS)) are 2×10⁻⁶ 18 atoms / cm 3 Below, preferably 2×10 17 atoms / cm 3 The following applies.

[0406] Furthermore, if alkali metals or alkaline earth metals are included in the oxide semiconductor, defect levels may form and carriers may be generated. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals are prone to exhibiting normaly-on characteristics. Accordingly, the concentration of alkali metals or alkaline earth metals within the oxide semiconductor obtained by SIMS is 1×10⁻⁶ 18 atoms / cm 3 Below, preferably 2×10 16 atoms / cm 3 The following applies.

[0407] Furthermore, when nitrogen is included in an oxide semiconductor, electron carriers are generated, increasing the carrier concentration and making it prone to n-type transformation. Therefore, transistors using oxide semiconductors containing nitrogen are prone to exhibiting normaly-on characteristics. Alternatively, the inclusion of nitrogen in an oxide semiconductor may lead to the formation of trap levels. As a result, the electrical characteristics of the transistor may become unstable. Therefore, the nitrogen concentration within the oxide semiconductor obtained by SIMS is set to 5×10 19 atoms / cm 3 Less than, preferably 5×10 18 atoms / cm 3 Below, more preferably 1×10 18 atoms / cm 3 Below, more preferably 5×10 17 atoms / cm 3 The following applies.

[0408] Furthermore, hydrogen contained in oxide semiconductors reacts with oxygen bonded to metal atoms to form water, which may result in the formation of oxygen vacancies. When hydrogen enters these oxygen vacancies, electron carriers may be generated. Additionally, some of the hydrogen may combine with oxygen bonded to metal atoms to generate electron carriers. Therefore, transistors using oxide semiconductors containing hydrogen are prone to exhibiting normaly-on characteristics. Consequently, it is desirable to reduce the hydrogen content within the oxide semiconductor as much as possible. Specifically, the hydrogen concentration obtained by SIMS in the oxide semiconductor is 1×10⁻⁶ 20 atoms / cm 3 Less than, preferably 1×10 19 atoms / cm 3 Less than, more preferably 5×10 18 atoms / cm 3 Less than, more preferably 1×10 18 atoms / cm 3 Make it less than.

[0409] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be imparted.

[0410] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0411] (Embodiment 4)

[0412] In this embodiment, an electronic device of one form of the present invention is described.

[0413] The electronic device of the present embodiment has a display device of one form of the present invention. For example, a display device of one form of the present invention can be applied to the display portion of the electronic device. Since the display device of one form of the present invention has a function of detecting light, it can perform biometric authentication on the display portion or detect touch actions (contact or approach). By doing so, the functionality and convenience of the electronic device can be enhanced.

[0414] Examples of electronic devices include, for instance, televisions, desktop or laptop personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices having relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, and sound playback devices.

[0415] The electronic device of the present embodiment may have a sensor (including a function for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared radiation).

[0416] The electronic device of the present embodiment may have various functions. For example, it may have a function of displaying various information (still images, video, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data recorded on a recording medium.

[0417] The electronic device (6500) shown in (A) of FIG. 22 is a portable information terminal that can be used as a smartphone.

[0418] The electronic device (6500) has a housing (6501), a display unit (6502), a power button (6503), a button (6504), a speaker (6505), a microphone (6506), a camera (6507), and a light source (6508), etc. The display unit (6502) has a touch panel function.

[0419] A display device of one form of the present invention can be applied to the display unit (6502).

[0420] Figure 22 (B) is a schematic cross-sectional view including the end of the housing (6501) on the side of the microphone (6506).

[0421] A light-transmitting protective member (6510) is provided on the display side of the housing (6501), and a display panel (6511), an optical member (6512), a touch sensor panel (6513), a printed circuit board (6517), a battery (6518), etc. are arranged within the space enclosed by the housing (6501) and the protective member (6510).

[0422] A display panel (6511), an optical member (6512), and a touch sensor panel (6513) are fixed to the protective member (6510) by an adhesive layer (not shown).

[0423] A portion of the display panel (6511) is folded in an area outside the display portion (6502), and an FPC (6515) is connected to this folded portion. An IC (6516) is mounted on the FPC (6515). The FPC (6515) is connected to a terminal provided on the printed circuit board (6517).

[0424] A flexible display of one form of the present invention can be applied to the display panel (6511). Therefore, a very lightweight electronic device can be realized. Also, since the display panel (6511) is very thin, a large capacity battery (6518) can be installed while suppressing the thickness of the electronic device. Additionally, by folding a part of the display panel (6511) and placing a connection part with the FPC (6515) on the back side of the pixel part, a slim bezel electronic device can be realized.

[0425] By using a display device of one form of the present invention on the display panel (6511), imaging can be performed on the display unit (6502). For example, fingerprint authentication can be performed by capturing a fingerprint with the display panel (6511).

[0426] By having the display unit (6502) further include a touch sensor panel (6513), the display unit (6502) can be provided with a touch panel function. Various methods such as capacitive, resistive, surface acoustic wave, infrared, optical, and pressure-sensitive methods can be used as the touch sensor panel (6513). Alternatively, the display panel (6511) may be made to function as a touch sensor, in which case the touch sensor panel (6513) does not need to be provided.

[0427] An example of a television device is shown in (A) of FIG. 23. The television device (7100) includes a display unit (7000) in a housing (7101). Here, a configuration is shown in which the housing (7101) is supported by a stand (7103).

[0428] A display device of one form of the present invention can be applied to the display unit (7000).

[0429] The television device (7100) shown in (A) of FIG. 23 can be operated by an operation switch having a housing (7101) or by a separate remote controller (7111). Alternatively, a touch sensor may be provided on the display unit (7000), or the television device (7100) may be operated by touching the display unit (7000) with a finger or the like. The remote controller (7111) may have a display unit that displays information output from the remote controller (7111). Since the channel and volume can be operated by the operation key or touch panel having the remote controller (7111), the image displayed on the display unit (7000) can be operated.

[0430] Additionally, the television device (7100) is configured to include a receiver and a modem, etc. General television broadcasts can be received through the receiver. Furthermore, by connecting to a communication network via wired or wireless means through the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication can be performed.

[0431] An example of a notebook-type personal computer is shown in (B) of FIG. 23. The notebook-type personal computer (7200) has a housing (7211), a keyboard (7212), a pointing device (7213), an external connection port (7214), etc. A display unit (7000) is included in the housing (7211).

[0432] A display device of one form of the present invention can be applied to the display unit (7000).

[0433] An example of digital signage is shown in (C) and (D) of Fig. 23.

[0434] The digital signage (7300) shown in (C) of FIG. 23 has a housing (7301), a display unit (7000), and a speaker (7303), etc. It may also have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, etc.

[0435] (D) of FIG. 23 is a digital signage (7400) provided on a cylindrical column (7401). The digital signage (7400) has a display (7000) provided along the curved surface of the column (7401).

[0436] In (C) and (D) of FIG. 23, a display device of one form of the present invention can be applied to the display unit (7000).

[0437] The wider the display section (7000), the more information can be provided at once. Additionally, the wider the display section (7000), the easier it is to catch people's eyes, and, for example, the more effective the promotion of an advertisement can be.

[0438] By applying a touch panel to the display unit (7000), it is desirable not only to display images or videos on the display unit (7000) but also to allow the user to operate it intuitively. In addition, when used for the purpose of providing information such as route information or traffic information, usability can be enhanced through intuitive operation.

[0439] In addition, as shown in (C) and (D) of FIG. 23, it is preferable that the digital signage (7300) or digital signage (7400) be connected via wireless communication with an information terminal (7311) or information terminal (7411), such as a smartphone, owned by the user. For example, information about an advertisement displayed on the display unit (7000) can be displayed on the screen of the information terminal (7311) or information terminal (7411). In addition, the display of the display unit (7000) can be switched by operating the information terminal (7311) or information terminal (7411).

[0440] Additionally, a game can be executed on the digital signage (7300) or digital signage (7400) using the screen of the information terminal (7311) or the information terminal (7411) as a control means (controller). By doing so, an unspecified number of users can simultaneously participate in and enjoy the game.

[0441] The electronic device shown in (A) to (F) of FIG. 24 has a housing (9000), a display unit (9001), a speaker (9003), an operation key (9005) (including a power switch or an operation switch), a connection terminal (9006), a sensor (9007) (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, longitude, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, smell, or infrared), a microphone (9008), etc.

[0442] The electronic device shown in (A) to (F) of FIG. 24 has various functions. For example, it may have a function of displaying various information (still images, video, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing by various software (programs), a wireless communication function, and a function of reading and processing programs or data recorded on a recording medium. Furthermore, the functions of the electronic device are not limited to these and may have various functions. The electronic device may have multiple display units. Additionally, the electronic device may be provided with a camera, etc., and may have a function of capturing still images or video and storing them on a recording medium (an external recording medium or built into the camera), and a function of displaying the captured images on a display unit.

[0443] Detailed information regarding the electronic devices shown in (A) to (F) of FIG. 24 will be explained below.

[0444] FIG. 24 (A) is a perspective view showing a portable information terminal (9101). The portable information terminal (9101) can be used, for example, as a smartphone. Additionally, the portable information terminal (9101) may be provided with a speaker (9003), a connection terminal (9006), a sensor (9007), etc. Additionally, the portable information terminal (9101) may display text or image information, etc., on its multiple surfaces. FIG. 24 (A) shows an example in which three icons (9050) are displayed. Additionally, information (9051) represented by a dashed rectangle may be displayed on another surface of the display unit (9001). Examples of information (9051) include notifications of incoming calls such as email, SNS, or phone calls, the subject of the email or SNS, the sender's name, date and time, time, remaining battery level, and antenna reception strength. Alternatively, icons (9050), etc., may be displayed at the location where the information (9051) is displayed.

[0445] FIG. 24 (B) is a perspective view showing a portable information terminal (9102). The portable information terminal (9102) has the function of displaying information on three or more sides of the display unit (9001). Here, an example is shown in which information (9052), information (9053), and information (9054) are displayed on different sides. For example, while the portable information terminal (9102) is stored in the chest pocket of clothing, the user may check the information (9053) displayed at a position visible from above the portable information terminal (9102). The user can check the display without taking the portable information terminal (9102) out of the pocket and, for example, decide whether to answer a call.

[0446] FIG. 24 (C) is a perspective view showing a wristwatch-type portable information terminal (9200). Additionally, the display unit (9001) is provided with a curved display surface and can display along the curved display surface. Additionally, the portable information terminal (9200) can make hands-free calls, for example, by communicating with a headset capable of wireless communication. Additionally, the portable information terminal (9200) can exchange data with other information terminals or charge via a connection terminal (9006). It may also be charged by wireless power supply.

[0447] FIGS. 24 (D) to (F) are perspective views showing a foldable portable information terminal (9201). FIGS. 24 (D) is a perspective view of the portable information terminal (9201) in an unfolded state, FIGS. 24 (F) is a perspective view of the portable information terminal (9201) in a folded state, and FIGS. 24 (E) is a perspective view of the state in progress of changing from one side of FIGS. 24 (D) and (F) to the other. The portable information terminal (9201) has excellent portability in the folded state and excellent visibility of the display due to a wide, seamless display area in the unfolded state. The display unit (9001) of the portable information terminal (9201) is supported by three housings (9000) connected by a hinge (9055). For example, the display unit (9001) can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0448] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification. Explanation of the symbols

[0449] 10, 10a to 10i: Display device, 11, 12: Substrate, 15: Device layer, 16: Functional layer, 19: Scattering layer, 20h: Aperture, 20: Light-emitting element, 21: Conductive layer, 22: Organic layer, 23: Conductive layer, 29: Structure, 30G, 30Ga, 30Gb, 30R: Light, 30Ref: Scattered light, 31: Color filter, 32: Light-blocking layer, 41: Insulating layer, 42: Adhesive layer, 50B, 50G: Light-emitting element, 51: Conductive layer, 52: Organic layer, 60a to 60c: Pixel, 61: Gap

Claims

Claim 1 A display device comprising: a light-emitting element; and a color filter, wherein the light-emitting element has a light-emitting region having a function of emitting light of a first color and a function of receiving light of a second color, the color filter is positioned above the light-emitting element and has a function of transmitting the light of the first color and a function of blocking the light of the second color, the color filter has an opening, and when viewed in a plane, the light-emitting region has a portion located inside the opening. Claim 2 A display device according to claim 1, having a portion where the color filter and the outer edge of the light-emitting region overlap when viewed in a plane. Claim 3 A display device according to claim 1, wherein, when viewed in a planar view, the end of the receiving and emitting region is located inside the opening, and there is a gap between the receiving and emitting region and the color filter. Claim 4 A display device according to any one of claims 1 to 3, further comprising a light-emitting element, wherein the light-emitting element has a light-emitting region having the function of emitting light of the second color, and the light-emitting element is provided on the same surface as the light-emitting element. Claim 5 In claim 4, the receiving and emitting element has an electron injection layer, an electron transport layer, a light-emitting layer, an active layer, a hole injection layer, and a hole transport layer between a pixel electrode and a first electrode, and the light-emitting element has one or more of the first electrode, the electron injection layer, the electron transport layer, the hole injection layer, and the hole transport layer, a display device. Claim 6 A display device according to any one of claims 1 to 3, further comprising a light-blocking layer, wherein the light-blocking layer is positioned above the light-emitting element and has the function of blocking the first color light and the second color light, wherein, when viewed in a planar view, the light-blocking layer is positioned outside the opening of the color filter, and the color filter has a first part and a second part, wherein the first part is a part that overlaps with the light-blocking layer when viewed in a planar view, and the second part is a part that is positioned between the first part and the opening when viewed in a planar view and does not overlap with the light-blocking layer or the light-emitting element. Claim 7 A display device according to claim 6, further comprising a light-emitting element, wherein the light-emitting element has a light-emitting region having the function of emitting light of the second color, and wherein the light-emitting element is provided on the same surface as the light-emitting element. Claim 8 In claim 7, the receiving and emitting element has an electron injection layer, an electron transport layer, a light-emitting layer, an active layer, a hole injection layer, and a hole transport layer between a pixel electrode and a first electrode, and the light-emitting element has one or more of the first electrode, the electron injection layer, the electron transport layer, the hole injection layer, and the hole transport layer, a display device. Claim 9 A display device according to claim 7, wherein, when viewed in a planar view, the light-blocking layer is located between the light-emitting element and the light-emitting element, and when viewed in a planar view, the light-emitting region of the light-blocking layer and the light-emitting element do not overlap, and there is a gap between the end of the light-blocking layer and the end of the light-emitting region. Claim 10 A display device according to any one of claims 1 to 3, further comprising a first substrate and a second substrate, wherein the first substrate and the second substrate are provided facing each other, the light-emitting element and the color filter are provided between the first substrate and the second substrate, the light-emitting element is provided on the first substrate, and the color filter is provided on the second substrate. Claim 11 A display device according to claim 10, further comprising a functional layer, wherein the functional layer is provided in contact with a side opposite to the side on which the color filter is provided of the second substrate, and the functional layer has a lower refractive index than the second substrate. Claim 12 A display device according to claim 10, wherein when the distance between the light-emitting element and the second substrate is T1 and the minimum width of the light-emitting region of the light-emitting element is W1, T1 satisfies a value of 0.1 times or more and 10 times or less of W1. Claim 13 A display device according to claim 12, wherein when the thickness of the second substrate is set to T2, T2 satisfies a value of 5 times or more and 100 times or less of T1. Claim 14 A display module having a display device described in any one of claims 1 to 3 and a connector or an integrated circuit. Claim 15 An electronic device having at least one of a display module described in claim 14, an antenna, a battery, a housing, a camera, a speaker, a microphone, a touch sensor, and an operation button.

Images