Deposition apparatus and deposition method

Abstract

The present invention relates to a deposition apparatus and a deposition method, and more specifically, to a deposition apparatus and a deposition method using a linear deposition source. A deposition apparatus according to one embodiment of the present invention may include: a substrate support on which a substrate is supported; a linear deposition source comprising a linear source gas nozzle and a linear reaction gas nozzle arranged parallel to each other in a first axial direction across the substrate, and spraying a source gas and a reaction gas respectively onto the substrate; a driving unit for moving the substrate support in a second axial direction intersecting the first axial direction; a position detection unit for detecting the position of the substrate support in the second axial direction; and a spray control unit for individually controlling the spraying of gas by the linear source gas nozzle and the linear reaction gas nozzle according to the detected position of the substrate support in the second axial direction.

Description

Technology Field

[0001] The present invention relates to a deposition apparatus and a deposition method, and more specifically, to a deposition apparatus and a deposition method using a linear deposition source. Background Technology

[0002] Spatial division atomic layer deposition (ALD) technology is used to control the composition ratio and thickness in the angstrom (Å) range. In spatial division atomic layer deposition (ALD), a thin film such as a metal oxide is deposited on a substrate by spatially separating and spraying a source gas and a reaction gas through a linear deposition source that includes multiple linear nozzles.

[0003] Conventionally, spatial division atomic layer deposition (ALD) was performed by simultaneously spraying gas from multiple linear nozzles to scan the substrate. In this case, the amount of gas consumed increases because excess gas is continuously sprayed before the substrate is positioned facing it or after the substrate has passed. Furthermore, gas sprayed from linear nozzles that are not facing the substrate during the scanning process is deposited in places other than the substrate (e.g., chambers), thereby contaminating parts other than the substrate. This contamination leads to the problem of particles being generated during the process.

[0004] In order to solve these problems, a method was attempted in which shield plates were placed at the front and rear ends of the substrate so that gas sprayed from multiple linear nozzles would be deposited only on the shield plates and not on the substrate. However, there is a problem in that the size of the chamber for scanning the substrate increases by the length of the shield plates, and there is still a problem in that gas consumption increases because excess gas is continuously sprayed before the substrate is positioned oppositely or after the substrate has passed.

[0005] Therefore, there is a need for technology that can reduce unnecessary gas consumption while minimizing the overall chamber length and equipment footprint, as well as minimizing contamination of parts other than the substrate by excess gas. Prior art literature

[0006] Published Patent No. 10-2014-0145047 The problem to be solved

[0007] The present invention provides a deposition apparatus and a deposition method that individually control the gas injection of a linear source gas nozzle and a linear reaction gas nozzle according to the position of a substrate support. means of solving the problem

[0008] A deposition apparatus according to one embodiment of the present invention may include: a substrate support on which a substrate is supported; a linear deposition source comprising a linear source gas nozzle and a linear reaction gas nozzle arranged parallel to each other in a first axial direction across the substrate, and spraying a source gas and a reaction gas respectively onto the substrate; a driving unit for moving the substrate support in a second axial direction intersecting the first axial direction; a position detection unit for detecting the position of the substrate support in the second axial direction; and a spray control unit for individually controlling the spraying of gas by the linear source gas nozzle and the linear reaction gas nozzle according to the detected position of the substrate support in the second axial direction.

[0009] The above injection control unit controls the gas injection of the linear source gas nozzle unit to inject the source gas when the substrate support passes through a section corresponding to the linear source gas nozzle unit, and controls the gas injection of the linear reaction gas nozzle unit to inject the reaction gas when the substrate support passes through a section corresponding to the linear reaction gas nozzle unit, and the linear source gas nozzle unit and the linear reaction gas nozzle unit are individually controlled according to the movement of the substrate support to sequentially start gas injection.

[0010] The substrate support includes a rim portion provided on both sides of the second axis direction that is longer than the substrate in the second axis direction, and the linear source gas nozzle portion starts spraying the source gas when the rim portion on the side of the second axis direction opposite to the direction of movement of the substrate support enters the section corresponding to the linear source gas nozzle portion, and terminates spraying the source gas when the rim portion on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear source gas nozzle portion, and the linear reaction gas nozzle portion starts spraying the reaction gas when the rim portion on the side of the second axis direction opposite to the direction of movement of the substrate support enters the section corresponding to the linear reaction gas nozzle portion, and terminates spraying the reaction gas when the rim portion on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear reaction gas nozzle portion.

[0011] The apparatus further includes a source gas valve provided in the linear source gas nozzle section; and a reaction gas valve provided in the linear reaction gas nozzle section; wherein the position detection section includes an encoder that outputs position and velocity information of the substrate support, and the injection control section can switch the source gas valve and the reaction gas valve according to the output position and velocity information of the substrate support.

[0012] It may further include a plasma generation unit for providing plasma to the linear reaction gas nozzle unit; and a plasma control unit for controlling the generation of plasma according to whether the substrate support moves.

[0013] The plasma control unit generates the plasma when the substrate support moves, and the injection control unit can control the gas injection of the linear reaction gas nozzle unit according to the second axial position of the substrate support when the plasma is formed.

[0014] The above driving unit reciprocates the substrate support so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, and the linear source gas nozzle unit is composed of a plurality of such nozzle units, each having a plurality of source gases containing different metals supplied thereto, and may further include a selection control unit that selects the linear source gas nozzle unit among the plurality of such nozzle units in which the source gas is blocked for every scan in which the entire area of ​​the substrate passes through a section corresponding to the linear deposition source.

[0015] The linear reaction gas nozzle section may further include first and second reaction gas nozzle sections respectively disposed on one side and the other side in the second axis direction of the linear deposition source such that the linear source gas nozzle section is disposed between each other, and a selection control section for selecting the reaction gas nozzle section among the first and second reaction gas nozzle sections in which the reaction gas is blocked according to the direction of movement of the substrate support.

[0016] The above selection control unit can block the reaction gas of the second reaction gas nozzle unit when the substrate support moves to one side of the second axis direction, and block the reaction gas of the first reaction gas nozzle unit when the substrate support moves to the other side of the second axis direction.

[0017] The above linear deposition source may further include a purge nozzle section that sprays purge gas and is arranged side by side on both sides of the second axis direction of each of the linear source gas nozzle section and the linear reaction gas nozzle section.

[0019] A deposition method according to another embodiment of the present invention may include: a process of moving a substrate support, on which a substrate is supported, in a second axis direction intersecting the first axis direction so as to pass through a section corresponding to a linear deposition source in which a linear source gas nozzle part and a linear reaction gas nozzle part are arranged parallel to each other in a first axis direction; a process of detecting the position of the substrate support in the second axis direction; and a process of individually controlling the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part according to the detected position of the substrate support in the second axis direction.

[0020] The above individually controlling process includes: a process of controlling the gas injection of the linear source gas nozzle section to inject the source gas when the substrate support passes through a section corresponding to the linear source gas nozzle section; and a process of controlling the gas injection of the linear reaction gas nozzle section to inject the reaction gas when the substrate support passes through a section corresponding to the linear reaction gas nozzle section, wherein in the individually controlling process, the linear source gas nozzle section and the linear reaction gas nozzle section are individually controlled according to the movement of the substrate support so as to sequentially start gas injection.

[0021] The substrate support includes a rim portion provided on both sides of the second axis direction that is longer than the substrate in the second axis direction, and the process of controlling the gas injection of the linear source gas nozzle portion includes: a process of starting the injection of the source gas when the rim portion on the side of the second axis direction opposite to the direction of movement of the substrate support enters a section corresponding to the linear source gas nozzle portion; and a process of terminating the injection of the source gas when the rim portion on the side opposite to the direction of movement of the substrate support enters a section corresponding to the linear source gas nozzle portion, and the process of controlling the gas injection of the linear reaction gas nozzle portion may include: a process of starting the injection of the reaction gas when the rim portion on the side of the second axis direction opposite to the direction of movement of the substrate support enters a section corresponding to the linear reaction gas nozzle portion; and a process of terminating the injection of the reaction gas when the rim portion on the side opposite to the direction of movement of the substrate support enters a section corresponding to the linear reaction gas nozzle portion.

[0022] The process of detecting the above position includes a process of outputting position and speed information of the substrate support using an encoder, and in the process of individually controlling, the source gas valve of the linear source gas nozzle part and the reaction gas valve of the linear reaction gas nozzle part can be switched according to the output position and speed information of the substrate support.

[0023] The process further includes generating plasma in the linear reaction gas nozzle section when the substrate support moves; and the process of controlling the gas injection of the linear reaction gas nozzle section can be performed according to the second axial position of the substrate support while the plasma is formed.

[0024] The above linear source gas nozzle section is composed of a plurality of such nozzles, wherein a plurality of source gases containing different metals are supplied to each of them, and the process of moving in the second axial direction includes the process of reciprocating the substrate support so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, and may further include the process of selecting the linear source gas nozzle section among the plurality of such nozzle sections in which the source gas is blocked for every scan in which the entire area of ​​the substrate passes through a section corresponding to the linear deposition source.

[0025] The above linear reaction gas nozzle section includes first and second reaction gas nozzle sections respectively disposed on one side and the other side of the second axis direction of the linear deposition source such that the linear source gas nozzle section is disposed between each other, and may further include a process of selecting a reaction gas nozzle section among the first and second reaction gas nozzle sections in which the reaction gas is blocked according to the direction of movement of the substrate support.

[0026] The process of selecting the reaction gas nozzle part may include the process of selecting the second reaction gas nozzle part when the substrate support moves to one side of the second axis direction; and the process of selecting the first reaction gas nozzle part when the substrate support moves to the other side of the second axis direction. Effects of the invention

[0027] A deposition apparatus according to an embodiment of the present invention controls the gas injection of a linear source gas nozzle and a linear reaction gas nozzle individually according to the second axial position of a substrate support detected by a position detection unit, and sequentially starts gas injection in accordance with the arrival (or reaching) of the substrate at the respective positions corresponding to the linear source gas nozzle and the linear reaction gas nozzle. This reduces unnecessary gas consumption that is not injected onto the substrate and thus cannot participate in deposition. Furthermore, by suppressing or preventing the deposition of source gas and / or reaction gas on parts other than the substrate (e.g., a chamber), contamination of parts other than the substrate caused by deposition can be minimized, and the generation of particles during the process caused by such contamination can be prevented or suppressed. Accordingly, the degradation of the properties of the deposited thin film caused by particles can be prevented or suppressed, and cleaning of the deposition apparatus may be eliminated, or the cleaning cycle for preventing particle generation may be extended, thereby reducing cleaning costs.

[0028] At this time, by providing a rim portion on the substrate support that is longer in the second axial direction than the substrate and controlling the gas injection of the linear source gas nozzle portion and the linear reaction gas nozzle portion according to the position of the rim portion, a delay time can be secured due to the switching of the source gas valve and the reaction gas valve, and due to the delay time, it is possible to prevent the substrate from passing (or entering) the section corresponding to the linear source gas nozzle portion and / or the linear reaction gas nozzle portion before the gas injection begins. In addition, even when the gas injection is terminated, by ensuring that gas is injected into the rim portion of the substrate support during the delay time, it is possible to prevent excess gas from spreading to other places and to induce the flow of excess gas toward the pumping hole so that it is exhausted into the pumping hole. Brief explanation of the drawing

[0029] FIG. 1 is a schematic cross-sectional view showing a deposition apparatus according to an embodiment of the present invention. FIG. 2 is a conceptual diagram illustrating the sequential gas injection of a linear source gas nozzle section and a linear reaction gas nozzle section according to an embodiment of the present invention. FIG. 3 is a flowchart illustrating a deposition method according to another embodiment of the present invention. Specific details for implementing the invention

[0030] Embodiments of the present invention will be described in more detail below with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms; these embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. In the description, the same reference numerals are assigned to identical components, and the drawings may be partially exaggerated in size to accurately describe the embodiments of the present invention, and the same reference numerals in the drawings refer to the same elements.

[0032] FIG. 1 is a schematic cross-sectional view showing a deposition apparatus according to an embodiment of the present invention.

[0033] Referring to FIG. 1, a deposition apparatus (100) according to an embodiment of the present invention may include: a substrate support (110) on which a substrate (10) is supported; a linear deposition source (120) which includes a linear source gas nozzle section (121) and a linear reaction gas nozzle section (122) arranged parallel to each other in a first axial direction across the substrate (10) and sprays a source gas and a reaction gas respectively onto the substrate (10); a driving unit (130) which moves the substrate support (110) in a second axial direction intersecting the first axial direction; a position detection unit (140) which detects the position of the substrate support (110) in the second axial direction; and a spray control unit (151) which individually controls the spraying of the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) according to the detected position of the substrate support (110) in the second axial direction.

[0034] The substrate support (110) can support the substrate (10) and, by driving the driving unit (130), can move relative to the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) so that the source gas and reaction gas can be sprayed over the entire area of ​​the substrate (10).

[0035] A linear deposition source (120) may include a linear source gas nozzle section (121) and a linear reaction gas nozzle section (122) arranged parallel to each other in a first axial direction across the substrate (10), and may spray source gas and reaction gas onto the substrate (10) through the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122), respectively. The linear source gas nozzle section (121) may extend in the first axial direction and may spray source gas supplied from a source gas supply section (not shown) to deposit a source material (layer) on the substrate (10) in atomic layer units.

[0036] In addition, the linear reaction gas nozzle section (122) may be extended in the first axis direction and may be arranged parallel to the linear source gas nozzle section (121) in the first axis direction in the second axis direction that intersects the first axis direction of the linear source gas nozzle section (121), and may deposit a reaction material (layer) on the substrate (10) in atomic layer units by spraying a reaction gas supplied from a reaction gas supply section (not shown). At this time, the source material (layer) and the reaction material (layer) may react to form a thin film.

[0037] Here, the deposition apparatus (100) of the present invention may further include a chamber (not shown) providing a space for deposition; and a substrate support (110) and a linear deposition source (120) are provided within the chamber (not shown) so that a deposition process can be performed within the chamber (not shown).

[0038] The driving unit (130) can move the substrate support (110) in a second axis direction intersecting the first axis direction and pass through a section corresponding to the linear deposition source (120). For example, the driving unit (130) can be connected to the substrate support (110) and can move the substrate support (110) in the second axis direction, thereby moving the substrate support (110) relative to the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) in the second axis direction. At this time, the driving unit (130) can move the substrate support (110) in the second axis direction to deposit the source gas and the reaction gas in atomic layer units over the entire area of ​​the substrate (10), alternately stack the source material (layer) and the reaction material (layer) in atomic layer units, and the source material and the reaction material can react to form the thin film.

[0039] Here, the driving unit (130) may include a rail (rail, 131); and a moving unit (132) connected to a substrate support (110) and moving along the rail (131). The rail (131) may extend in the second axial direction and may provide a movement path for the moving unit (132).

[0040] The moving part (132) can be connected to the substrate support (110) and can move the connected substrate support (110) while moving along the rail (131). At this time, the moving part (132) may be powered by a separate power source (not shown) or may be a linear motor with an integrated power source. Meanwhile, the configuration of the driving part (130) is not limited thereto, and it is sufficient if it can move the substrate support (110) in the second axis direction.

[0041] The position detection unit (140) can detect (or recognize) the second axial position of the substrate support (110) and can transmit the detected second axial position of the substrate support (110) to the spray control unit (151). At this time, the position detection unit (140) can detect the second axial position of the substrate support (110) using various methods such as a sensor.

[0042] The injection control unit (151) can individually control the gas injection of the linear source gas nozzle unit (121) and the linear reaction gas nozzle unit (122) according to the second axial position of the detected (or recognized) substrate support (110), control the gas injection of the linear source gas nozzle unit (121) and the linear reaction gas nozzle unit (122) by turning the gas injection on / off, and determine the start and end of the gas injection depending on which nozzle unit (121 or 122) the substrate support (110) passes through among the linear source gas nozzle unit (121) and the linear reaction gas nozzle unit (122).

[0043] The injection control unit (151) can control the gas injection of the linear source gas nozzle unit (121) to inject the source gas when the substrate support (110) passes through a section corresponding to the linear source gas nozzle unit (121), and can control the gas injection of the linear reaction gas nozzle unit (122) to inject the reaction gas when the substrate support (110) passes through a section corresponding to the linear reaction gas nozzle unit (122).

[0044] That is, the injection control unit (151) controls the gas injection of the linear source gas nozzle unit (121) according to the second axial position of the substrate support (110) so that the source gas can be injected when the substrate support (110) and / or the substrate (10) passes through a section corresponding to the linear source gas nozzle unit (121), and the source gas can be injected only when the substrate (10) and / or the substrate support (110) is positioned opposite the linear source gas nozzle unit (121), and the source gas can be deposited (maximum) on the substrate (10).

[0045] And the injection control unit (151) controls the gas injection of the linear reaction gas nozzle unit (122) according to the second axial position of the substrate support (110) so that the reaction gas can be injected when the substrate support (110) and / or the substrate (10) passes through a section corresponding to the linear reaction gas nozzle unit (122), and the reaction gas can be injected only when the substrate (10) and / or the substrate support (110) is positioned opposite the linear reaction gas nozzle unit (122), and the reaction gas can be deposited (only) on the substrate (10) (maximum).

[0046] Here, the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) are individually controlled by the injection control section (151) according to the movement of the substrate support (110) to sequentially start (or turn on) gas injection. Through this, the source gas can be injected when the substrate (10) and / or the substrate support (110) are positioned opposite (or corresponding to) the linear source gas nozzle section (121), and the reaction gas can be injected when the substrate (10) and / or the substrate support (110) are positioned opposite the linear reaction gas nozzle section (122). Accordingly, the amount of unnecessary gas consumed that is not injected onto the substrate (10) and therefore cannot participate in the deposition (reaction) can be reduced. Additionally, the source gas and / or the reaction gas may be sprayed only onto the substrate (10) and / or the substrate support (110), thereby suppressing or preventing the deposition of the source gas and / or the reaction gas on parts other than the substrate (10) and / or the substrate support (110) (e.g., the chamber and the driving unit, etc.), and minimizing contamination of parts other than the substrate (10) and / or the substrate support (110) by the deposition of the source gas and / or the reaction gas, and preventing or suppressing the generation of particles (during the process) due to peeling of contaminants deposited on parts other than the substrate (10) and / or the substrate support (110). Meanwhile, the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) may be individually controlled by the injection control part (151) according to the movement of the substrate support (110) to sequentially terminate (or turn off) the gas injection.

[0047] Accordingly, the deposition apparatus (100) according to the present invention can individually control the gas injection of the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) according to the second axial position of the substrate support (110) detected by the position detection unit (140), thereby sequentially starting the gas injection in accordance with the arrival (or arrival) of the substrate (10) and / or the substrate support (110) at the position corresponding (or opposite) to the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122), respectively. Accordingly, the amount of unnecessary gas consumed that is not injected onto the substrate (10) and thus cannot participate in the deposition can be reduced, and the deposition of the source gas and / or the reaction gas on parts other than the substrate (10) and / or the substrate support (110) can be suppressed or prevented, thereby minimizing contamination of parts other than the substrate (10) and / or the substrate support (110) caused by the deposition of the source gas and / or the reaction gas. Accordingly, the generation of particles due to the peeling of contaminants deposited on parts other than the substrate (10) and / or the substrate support (110) can be prevented or suppressed, and the degradation of the properties of the deposited thin film due to particles can be prevented or suppressed, and cleaning of the deposition device (100), such as the chamber (not shown), can be eliminated, or the cleaning cycle to prevent particle generation can be increased, thereby reducing cleaning costs.

[0048] FIG. 2 is a conceptual diagram illustrating the sequential gas injection of a linear source gas nozzle section and a linear reaction gas nozzle section according to an embodiment of the present invention, FIG. 2(a) shows the entry of a substrate support into a section corresponding to a linear deposition source, FIG. 2(b) shows the movement of a substrate support within a section corresponding to a linear deposition source, and FIG. 2(c) shows the departure of a substrate support from a section corresponding to a linear deposition source.

[0049] Referring to FIG. 2, the substrate support (110) may include a rim portion (110a) provided on both sides of the second axis direction that is longer in the second axis direction than the substrate (10). The rim portion (110a) may be provided on both sides of the second axis direction of the substrate support (110) that is longer in the second axis direction than the substrate (10), and either side of the second axis direction may enter the section corresponding to the linear deposition source (120) before the substrate (10), and the other side (or opposite side) may exit (or move away) from the section corresponding to the linear deposition source (120) after the substrate (10).

[0050] At this time, the linear source gas nozzle section (121) can start (or turn on) the injection of the source gas when the edge section (110a) on the side of the second axis direction opposite to the direction of movement of the substrate support (110) enters the section corresponding to the linear source gas nozzle section (121), and can stop (or turn off) the injection of the source gas when the edge section (110a) on the side opposite to the direction of movement of the substrate support (110) enters the section corresponding to the linear source gas nozzle section (121). Ideally, the injection of the source gas through the linear source gas nozzle section (121) would be turned on and the injection of the source gas would be cut off as soon as it is turned on, but time is required for switching of valves, etc., and a certain amount of time is required even after turning on / off to achieve stable gas injection and complete cutoff.

[0051] For this reason, when the substrate (10) enters the section corresponding to the linear source gas nozzle section (121), the source gas is sprayed, so that there is no part of the substrate (10) that passes through the section corresponding to the linear source gas nozzle section (121) without the source gas being sprayed. Therefore, the injection of the source gas can be started when the edge section (110a) on the same side as the direction of movement of the substrate support (110) enters the section corresponding to the linear source gas nozzle section (121). Additionally, when the edge portion (110a) on the side opposite to the direction of movement of the substrate support (110) enters the section corresponding to the linear source gas nozzle portion (121), the substrate (10) does not completely exit the section corresponding to the linear source gas nozzle portion (121), and the injection of the source gas is terminated before the substrate (10) completely exits the section corresponding to the linear source gas nozzle portion (121), thereby preventing the substrate (10) from exiting the section corresponding to the linear source gas nozzle portion (121) to the substrate support (110) before the gas injection (i.e., the injection of the source gas) is blocked, and the source gas can be prevented from being deposited on a part other than the substrate (10) and / or the substrate support (110).Here, the second axial length of the edge portion (110a) can be determined such that, after the edge portion (110a) on the same side as the direction of movement of the substrate support (110) enters the section corresponding to the linear source gas nozzle portion (121) and starts spraying the source gas, the source gas is deposited from the leading edge (or front edge) of the substrate (10) without any part of the substrate (10) where the source gas is not deposited after passing through the section corresponding to the linear source gas nozzle portion (121) for the predetermined time, and the edge portion (110a) on the opposite side of the direction of movement of the substrate support (110) enters the section corresponding to the linear source gas nozzle portion (121) and ends spraying the source gas, and the gas spraying is blocked for the predetermined time, the source gas is not completely removed from the section corresponding to the linear source gas nozzle portion (121).

[0052] And the linear reaction gas nozzle section (122) can start spraying the reaction gas when the edge section (110a) on the side of the second axis direction opposite to the direction of movement of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle section (122), and stop spraying the reaction gas when the edge section (110a) on the side opposite to the direction of movement of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle section (122). Likewise, the linear reaction gas nozzle section (122) can start spraying the reaction gas when the edge section (110a) on the same side as the direction of movement of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle section (122), so that the reaction gas is sprayed when the substrate (10) enters the section corresponding to the linear reaction gas nozzle section (122) and there is no part of the substrate (10) that passes through the section corresponding to the linear reaction gas nozzle section (122) without the reaction gas being sprayed. Additionally, when the edge portion (110a) on the side opposite to the direction of movement of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle portion (122), the substrate (10) does not completely exit the section corresponding to the linear reaction gas nozzle portion (122). Therefore, the injection of the reaction gas is terminated before the substrate (10) completely exits the section corresponding to the linear reaction gas nozzle portion (122), thereby preventing the substrate (10) from exiting the section corresponding to the linear reaction gas nozzle portion (122) to the substrate support (110) before the gas injection (i.e., the injection of the reaction gas) is blocked, and the reaction gas can be prevented from being deposited on a part other than the substrate (10) and / or the substrate support (110).At this time, the second axial length of the edge portion (110a) can be appropriately determined such that, after the edge portion (110a) on the same side as the direction of movement of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle portion (122) and starts spraying the reaction gas, the reaction gas is deposited from the leading edge of the substrate (10) without any part of the substrate (10) where the reaction gas is not deposited after passing the section corresponding to the linear reaction gas nozzle portion (122) for the predetermined time, and after the edge portion (110a) on the opposite side of the direction of movement of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle portion (122) and ends spraying the reaction gas, the section corresponding to the linear reaction gas nozzle portion (122) is not completely deviated from for the predetermined time during which the gas spraying is blocked.

[0053] The deposition apparatus (100) according to the present invention may further include a source gas valve (not shown) provided to a linear source gas nozzle section (121); and a reaction gas valve (not shown) provided to a linear reaction gas nozzle section (122).

[0054] A source gas valve (not shown) may be provided to a linear source gas nozzle section (121) and may turn the injection of the source gas on / off, allow the source gas to be injected, or block the injection of the source gas. For example, the source gas valve (not shown) may be installed in a source gas pipe (not shown) that connects a source gas supply section (not shown) and a linear source gas nozzle section (121) to deliver (or supply) the source gas from the source gas supply section (not shown) to the linear source gas nozzle section (121), thereby allowing or blocking the supply of the source gas to the linear source gas nozzle section (121), and may allow or block (or block) the flow of the source gas within the linear source gas nozzle section (121). At this time, the source gas valve (not shown) may require the aforementioned predetermined time until the source gas is (stably) injected while switching from closed (or off) to open (or on), and the aforementioned predetermined time may be required until the source gas is (completely) blocked while switching from open to closed.

[0055] A reaction gas valve (not shown) may be provided to a linear reaction gas nozzle section (122) and may turn the injection of the reaction gas on / off, allow the reaction gas to be injected, or block the injection of the reaction gas. For example, the reaction gas valve (not shown) may be installed in a reaction gas piping (not shown) that connects a reaction gas supply section (not shown) and a linear reaction gas nozzle section (122) to deliver (or supply) the reaction gas from the reaction gas supply section (not shown) to the linear reaction gas nozzle section (122), thereby allowing or blocking the supply of the reaction gas to the linear reaction gas nozzle section (122), and may allow or block (or block) the flow of the reaction gas within the linear reaction gas nozzle section (122). At this time, the reaction gas valve (not shown) may require the aforementioned predetermined time until the reaction gas is (stably) injected while switching from closed to open, and the aforementioned predetermined time may be required until the reaction gas is (completely) blocked while switching from open to closed.

[0056] The position detection unit (140) may include an encoder that outputs position and speed information of the substrate support (110). The encoder may output position and speed information of the substrate support (110) and may output information of the position and speed of the substrate support (110) as an electrical signal. For example, the encoder may be attached to a motor to read the position of the motor and detect the rotational speed, amount of rotation, and direction of rotation of the motor, and may be a linear encoder attached to the substrate support (110) or the moving unit (132) and used like a scale with precise grid markings, so that the sensor reads pulses as it passes over the marked area, thereby converting the linear distance traveled into a linear distance.

[0057] At this time, the injection control unit (151) can switch the source gas valve (not shown) and the reaction gas valve (not shown) according to the position and speed information of the output substrate support (110). When the injection control unit (151) switches the source gas valve (not shown) and the reaction gas valve (not shown) according to the position and speed information of the output substrate support (110), the source gas valve (not shown) and the reaction gas valve (not shown) can be switched using the delay time resulting from the switching (or switching) of the source gas valve (not shown) and the reaction gas valve (not shown) and the (movement) speed of the substrate support (110), thereby allowing the source gas and the reaction gas to be deposited from the front end of the substrate (10) to the end (or rear end) of the substrate (10) and deposited on the entire surface (surface) of the substrate (10).

[0058] That is, when the source gas valve (not shown) is turned on / off (or opened / closed) to inject and block the source gas, and the reaction gas valve (not shown) is turned on / off to inject and block the reaction gas, a delay time occurs due to the switching (or on / off), and when the source gas valve (not shown) or the reaction gas valve (not shown) is turned on after the substrate (10) (i.e., the leading edge of the substrate) enters the section corresponding to the linear source gas nozzle section (121) or the section corresponding to the linear reaction gas nozzle section (122), a portion of the leading edge of the substrate (10) where the source gas or the reaction gas is not deposited occurs during the delay time. Accordingly, the source gas valve (not shown) or the reaction gas valve (not shown) can be turned on before the substrate (10) enters the section corresponding to the linear source gas nozzle section (121) or the section corresponding to the linear reaction gas nozzle section (122), so that the rim section (110a) on the same side as the direction of movement of the substrate support (110) can turn on the source gas valve (not shown) or the reaction gas valve (not shown) when it enters (or after entering) the section corresponding to the linear source gas nozzle section (121) or the section corresponding to the linear reaction gas nozzle section (122), thereby starting (or turning on) the injection of the source gas or the reaction gas, and at least when the substrate (10) enters the section corresponding to the linear source gas nozzle section (121) or the section corresponding to the linear reaction gas nozzle section (122), the injection of the source gas or the reaction gas is performed (or is being performed). The source gas or the reaction gas can be deposited from the leading edge of the substrate (10).

[0059] Here, the portion (or length) of the edge portion (110a) on the same side as the direction of movement of the substrate support (110), which serves as the ON standard for the source gas valve (not shown) or the reaction gas valve (not shown) depending on whether the source gas or the reaction gas is entered into the section corresponding to the linear source gas nozzle portion (121) or the section corresponding to the linear reaction gas nozzle portion (122), can be appropriately determined by a calculation using the delay time and the speed of the substrate support (110) so that the source gas or the reaction gas is not sprayed onto the edge portion (110a) on the same side as the direction of movement of the substrate support (110) (maximum) and can be deposited from the leading edge of the substrate (10).

[0060] Meanwhile, since the injection of the source gas and the reaction gas may become unstable after the source gas valve (not shown) and the reaction gas valve (not shown) are turned off, the source gas valve (not shown) and the reaction gas valve (not shown) may be turned off when the edge portion (110a) on the side opposite to the direction of movement of the substrate support (110) enters the section corresponding to the linear source gas nozzle portion (121) or the section corresponding to the linear reaction gas nozzle portion (122) so that the end of the substrate (10) moves out of the section corresponding to the linear source gas nozzle portion (121) or the section corresponding to the linear reaction gas nozzle portion (122), and the source gas valve (not shown) and the reaction gas valve (not shown) can be turned off when (or after entering) the section corresponding to the linear source gas nozzle portion (121) or the section corresponding to the linear reaction gas nozzle portion (122). The source gas and the reaction gas can be deposited stably and uniformly over the entire surface (side) of the substrate (10). At this time, the edge portion (110a) on the side opposite to the direction of movement of the substrate support (110) can enter the section corresponding to the linear source gas nozzle portion (121) or the section corresponding to the linear reaction gas nozzle portion (122) to prevent or suppress the source gas and / or the reaction gas sprayed during the delay time from spreading to other places (other than the substrate and / or the substrate support), and can prevent or suppress deposition on parts other than the substrate (10) and / or the substrate support (110).

[0061] Here, the linear deposition source (120) may further include pumping holes (125) provided between the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122). The pumping holes (125) are provided between the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) to exhaust the inside of the chamber (not shown) and to exhaust excess gas (or residual gas and / or byproducts), such as the source gas and the reaction gas, that is not deposited on the substrate (10). When such pumping holes (125) are present, the edge section (110a) of the substrate support (110) can block the diffusion of the excess gas and induce the flow of the excess gas toward the pumping holes (125), thereby allowing the excess gas to be exhausted into the pumping holes (125) and preventing deposition on parts other than the substrate (10). At this time, the pumping hole (125) can be connected to a suction pump (e.g., a vacuum pump), and the excess gas can be sucked in and discharged through the suction pump.

[0062] Accordingly, the deposition apparatus (100) according to the present invention provides a rim portion (110a) on the substrate support (110) that is longer in the second axial direction than the substrate (10), and controls the gas injection of the linear source gas nozzle portion (121) and the linear reaction gas nozzle portion (122) according to the position of the rim portion (110a), thereby securing the delay time according to the switching of the source gas valve (not shown) and the reaction gas valve (not shown), and due to the delay time, it is possible to prevent the substrate (10) from passing (or entering) the section corresponding to the linear source gas nozzle portion (121) and / or the linear reaction gas nozzle portion (122) before the gas injection starts. In addition, even when gas injection is terminated, gas is injected into the edge portion (110a) of the substrate support (110) during the delay time, thereby preventing the excess gas from spreading to other places and inducing the flow of the excess gas toward the pumping hole (125) so that it is exhausted into the pumping hole (125).

[0063] The deposition apparatus (100) according to the present invention may further include a plasma generation unit (160) for providing plasma to a linear reaction gas nozzle unit (122); and a plasma control unit (152) for controlling the generation of the plasma depending on whether the substrate support (110) moves.

[0064] The plasma generation unit (160) can provide plasma to the linear reaction gas nozzle unit (122) and can excite the reaction gas to make it into a radical state. Through this, the reaction gas in a radical state can be sprayed from the linear reaction gas nozzle unit (122).

[0065] Here, the plasma generation unit (160) may form plasma within the linear reaction gas nozzle unit (122) or may form plasma between the linear reaction gas nozzle unit (122) and the substrate support (110). For example, the plasma generation unit (160) may include an electrode unit (161); and a power supply unit (not shown) that applies voltage to the electrode unit (161) to form plasma. The electrode unit (161) may be composed of a pair of electrodes facing each other within the linear reaction gas nozzle unit (122) to form plasma within the linear reaction gas nozzle unit (122), or an electrode may be provided in the linear reaction gas nozzle unit (122) facing the substrate support (110) to form plasma between the linear reaction gas nozzle unit (122) and the substrate support (110) to create a potential difference (or voltage difference) with the substrate support (110).

[0066] The power supply unit (not shown) can apply voltage to the electrode unit (161), and by applying voltage, a potential difference is generated in the electrode unit (161) to form plasma.

[0067] The plasma control unit (152) can control the generation of the plasma depending on whether the substrate support (110) is moved, and can turn the plasma on / off, and can generate the plasma when performing a deposition process by moving the substrate support (110). At this time, the timing of turning the plasma on / off may differ from the timing of turning the reaction gas (the reaction gas valve) on / off, and the turning of the plasma on / off may not occur simultaneously with the turning of the reaction gas.

[0068] For example, the plasma may be continuously turned on (or formed) while performing a deposition process by moving the substrate support (110) regardless of whether the substrate support (110) and / or the substrate (10) are facing the linear reaction gas nozzle part (122), and the reaction gas may be turned on (or injected) only when the substrate support (110) and / or the substrate (10) are facing the linear reaction gas nozzle part (122) according to the second axial position of the substrate support (110).

[0069] That is, the plasma control unit (152) can generate the plasma when the substrate support (110) moves, and the injection control unit (151) can control the gas injection of the linear reaction gas nozzle unit (122) according to the second axis direction position of the substrate support (110) when the plasma is formed.

[0070] Since the above plasma requires a somewhat long time to stabilize after being turned on by applying voltage to the electrode portion (161), the substrate (10) may pass through the section corresponding to the linear reaction gas nozzle portion (122) before the plasma is stabilized, or to prevent this, the edge portion (110a) of the substrate support (110) may be extended, causing the second axial length of the chamber (not shown) for scanning the substrate (10) to become longer. Accordingly, the plasma can be turned on when the movement of the substrate support (110) begins for the deposition process and turned off when the movement of the substrate support (110) is stopped to end the deposition process.

[0071] At this time, to prevent unnecessary deposition of the reaction gas and gas consumption, the gas injection of the linear reaction gas nozzle part (122) can be controlled according to the second axis direction position of the substrate support (110). The reaction gas injection is started when the edge part (110a) on the side of the second axis direction that is the same as the direction of movement of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle part (122), and the injection of the reaction gas is stopped when the edge part (110a) on the side opposite to the direction of movement of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle part (122), thereby allowing the reaction gas to be injected only when the substrate support (110) and / or the substrate (10) is facing the linear reaction gas nozzle part (122).

[0072] Accordingly, when the plasma control unit (152) starts moving the substrate support (110) for the deposition process, the plasma is generated (or turned on) so that the stabilized plasma can be formed when the substrate (10) enters the section corresponding to the linear reaction gas nozzle unit (122), and in the state where the stabilized plasma is formed, the gas injection of the linear reaction gas nozzle unit (122) is controlled according to the second axial position of the substrate support (110) so that the reaction gas in a radical state can be stably injected toward the substrate (10) from the linear reaction gas nozzle unit (122).

[0073] The driving unit (130) can reciprocate the substrate support (110) so that the entire area of ​​the substrate (10) passes through a section corresponding to the linear deposition source (120), and the linear source gas nozzle unit (121) is composed of a plurality of such nozzles so that a plurality of source gases containing different metals can be supplied to each. By causing the driving unit (130) to cause the entire area of ​​the substrate (10) to pass through a section corresponding to the linear deposition source (120), a thin film (or the source material (layer) and the reaction material (layer)) can be deposited on the entire area of ​​the substrate (10), and the entire area of ​​the substrate (10) can move away from (or pass through) the section corresponding to the linear deposition source (120) so that the thin film can be uniformly deposited on the entire area of ​​the substrate (10). Additionally, by causing the driving unit (130) to reciprocate the substrate support (110), a material layer (or the source material (layer) and the reaction material (layer)) can be stacked multiple times over the entire area of ​​the substrate (10), thereby forming (or depositing) a thin film of a desired thickness on the substrate (10).

[0074] The linear source gas nozzle section (121) may be composed of a plurality of units, and a plurality of source gases containing different metals may each be supplied. At this time, the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) may be arranged alternately with each other in the second axis direction.

[0075] For example, by supplying and spraying different source gases to each of a plurality of linear source gas nozzle sections (121a, 121b, 121c), a multi-component (e.g., In / Ga / Zn) atomic layer can be deposited, and a composite metal oxide or nitride such as IGZO (In / Ga / Zn Oxide) can be deposited. At this time, source gases containing different metals can be supplied to each of the linear source gas nozzle sections (121a, 121b, 121c).

[0076] Here, the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) may be arranged alternately in the second axis direction, and a plurality of linear source gas nozzle sections (121a, 121b, 121c) and at least one linear reaction gas nozzle section (122) may be arranged alternately with each other, or may be arranged regularly alternately to have a certain ratio. For example, when there is one linear reaction gas nozzle section (122), there may be two linear source gas nozzle sections (121), and two linear source gas nozzle sections (121a, 121b) may be arranged on each side of the second axis direction (12) of the linear reaction gas nozzle section (122), and one linear reaction gas nozzle section (122) may be arranged between the two linear source gas nozzle sections (121a, 121b). In addition, even if there are two linear reaction gas nozzle sections (122), there may be two linear source gas nozzle sections (121), and the linear source gas nozzle sections (121) and linear reaction gas nozzle sections (122) may alternate with one another, so that a linear source gas nozzle section (121a) is positioned on one side of the second axis direction (12) of the linear deposition source (120), and a linear reaction gas nozzle section (122) is positioned on the other side of the second axis direction (12) of the linear deposition source (120). In addition, even if there are three linear reaction gas nozzle sections (122), there may be two linear source gas nozzle sections (121), and two linear source gas nozzle sections (121a, 121b) may be arranged between the three linear reaction gas nozzle sections (122), and linear reaction gas nozzle sections (122) may be arranged on both sides of the second axis direction (12) of each linear source gas nozzle section (121a, 121b).

[0077] At this time, the source gas may include a metal organic compound, and the reaction gas may include an oxygen atom (O). The source gas may include a metal, may be an organic source, and may include a metal organic compound. Additionally, the reaction gas may include an oxygen atom (O), may be oxygen (O2), and may react with the source gas(s) to form an oxide thin film. For example, the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) can deposit an oxide by spraying the source gas of an organometallic compound and the reaction gas of oxygen (O2) onto the substrate (10), respectively, and can deposit a composite metal oxide or nitride such as IGZO by spraying different source gases from each of the plurality of linear source gas nozzle sections (121a, 121b, 121c), and can also manufacture an oxide thin film transistor (Oxide TFT) using a composite metal oxide as a channel layer. Here, the linear reaction gas nozzle section (122) provides (or forms) the plasma to activate oxygen radicals (O2) that activate oxygen (O2). 2- The above-mentioned reactant (or above-mentioned reaction gas), such as ), can be reacted with the above-mentioned source material (layer).

[0078] In addition, a plurality of source gases containing different metals can be supplied to each of the plurality of linear source gas nozzle sections (121a, 121b, 121c). Here, the source gas supply section (not shown) can supply one (one type) of source gas selected from two or more types of source gases containing different metals to each of the plurality of linear source gas nozzle sections (121a, 121b, 121c), and each source gas for depositing a composite metal oxide can be supplied to at least one of the plurality of linear source gas nozzle sections (121a, 121b, 121c). That is, one of the plurality (two or more types) of source gases can be supplied to each of the linear source gas nozzle sections (121a, 121b, 121c).

[0079] For example, each of the multiple linear source gas nozzle sections (121a, 121b, 121c) can spray source gas containing different metals to deposit a multi-component atomic layer such as indium (In), gallium (Ga), and zinc (Zn), and accordingly, a composite metal oxide or nitride such as IGZO can be deposited. In this case, when the composite metal oxide is used in an oxide thin film transistor (TFT), a high-quality channel layer can be secured in the oxide thin film transistor (TFT).

[0080] And the source gas supply unit (not shown) may be composed of a plurality of units and each may be connected to a different linear source gas nozzle unit (121a or 121b or 121c) among a plurality of linear source gas nozzle units (121a, 121b, 121c), and the plurality of source gas supply units (not shown) may each supply the source gas containing a different metal to the connected linear source gas nozzle unit (121a or 121b or 121c). The source gas supply unit (not shown) may also be composed of a plurality of units according to the plurality of linear source gas nozzle units (121a, 121b, 121c), and each of the plurality of source gas supply units (not shown) may be connected to a different linear source gas nozzle unit (121a or 121b or 121c) among the plurality of linear source gas nozzle units (121a, 121b, 121c).

[0081] In addition, a plurality of source gas supply units (not shown) can supply source gas containing different metals to each connected linear source gas nozzle unit (121a, 121b, 121c), and accordingly, each linear source gas nozzle unit (121a, 121b, 121c) can spray the source gas containing different metals and perform a multi-component atomic layer deposition (ALD) process. Through the multi-component atomic layer deposition (ALD) process, a multi-component atomic layer can be deposited to deposit the composite metal oxide or nitride.

[0082] Meanwhile, the source gas supply unit (not shown) and the linear source gas nozzle unit (121) may each have three units, and the source gas supply unit (not shown) may be connected to each linear source gas nozzle unit (121a, 121b, 121c). Source gas containing a first metal (e.g., Ga) may be supplied to one (121a) of the three linear source gas nozzle units (121a, 121b, 121c), source gas containing a second metal (e.g., Zn) may be supplied to another (121b) of the three linear source gas nozzle units (121a, 121b, 121c), and source gas containing a third metal (e.g., In) may be supplied to the remaining (121c) of the three linear source gas nozzle units (121a, 121b, 121c). By using oxygen (O2) as the reaction gas and spraying source gas containing the first metal, source gas containing the second metal, and source gas containing the third metal onto the substrate (10) through three linear source gas nozzle sections (121a, 121b, 121c), respectively, a composite metal oxide can be deposited by stacking atomic layers of the first metal, the second metal, and the third metal. Here, if the first metal, the second metal, and the third metal are indium (In), gallium (Ga), and zinc (Zn), respectively, a composite metal oxide of IGZO can be deposited.

[0083] At this time, the deposition apparatus (100) according to the present invention may further include a selection control unit (153) for selecting a linear source gas nozzle unit (121) in which the source gas is blocked among a plurality of linear source gas nozzle units (121) for every scan in which the entire area of ​​the substrate (10) passes through a section corresponding to the linear deposition source (120).

[0084] The selection control unit (153) can select a linear source gas nozzle unit (121) in which the source gas is blocked among a plurality of linear source gas nozzle units (121) for every scan in which the entire area of ​​the substrate (10) passes through a section corresponding to the linear deposition source (120), and can selectively deposit a plurality of source gases on the substrate (10) and control (or adjust) the composition (i.e., the ratio of the composite metal) in the composite metal oxide and composite metal nitride.

[0085] For example, when the driving unit (130) moves the substrate support (110) back and forth to perform the deposition process, if a plurality of source gases are all deposited by a first scan that moves the substrate support (110) to one side of the second axis direction, and then a second scan is performed immediately to the other side of the second axis direction, the source gas that was deposited last (or at the top) in the first scan is deposited first again in the second scan and overlapped, and the ratio of the composite metal may differ in the thickness direction (or height) of the thin film, and the amount (or ratio) of each metal in the thin film may differ.

[0086] Accordingly, in order to sequentially deposit one source gas at a time, after depositing all of the plurality of source gases in the first scan, in the second scan, the source gas that was deposited last in the first scan can be blocked and only the remaining source gas(s) can be deposited, and in the third scan, the source gas that was deposited last in the second scan can be blocked and only the remaining source gas(s) can be deposited. In the n-th scan, the source gas that was deposited last in the n-1 scan can be blocked and only the remaining source gas(s) can be deposited, and in this manner, the thin film (or the source material (layer)) can be deposited up to the n-th scan.

[0087] At this time, the selection control unit (153) can select the linear source gas nozzle unit (121) that sprayed the source gas that was last deposited in the previous scan (or the n-1 scan) to block the source gas in this scan (or the n-1 scan), and can select the linear source gas nozzle unit (121) that sprayed the source gas that was last deposited in the previous scan for every scan in which the entire area of ​​the substrate (10) passes through a section corresponding to the linear deposition source (120).

[0088] Meanwhile, the method of selecting the linear source gas nozzle (121) through which the source gas is blocked via the selection control unit (153) is not limited thereto and can be appropriately determined according to the composition and / or deposition structure of the composite metal oxide and the composite metal nitride to be deposited.

[0089] The linear reaction gas nozzle section (122) may include first and second reaction gas nozzle sections (122a, 122b) respectively positioned on one side and the other side of the second axis direction of the linear deposition source (120) such that a linear source gas nozzle section (121) is positioned between them. The first reaction gas nozzle section (122a) may be positioned on one side of the second axis direction of the linear deposition source (120), and may spray (or deposit) the reaction gas last when the substrate support (110) moves to the one side of the second axis direction and scans, and may spray the reaction gas first when the substrate support (110) moves to the other side of the second axis direction and scans.

[0090] The second reaction gas nozzle part (122b) can be positioned on the other side of the second axis direction of the linear deposition source (120), and the reaction gas can be injected last when the substrate support (110) moves to the other side of the second axis direction and scans, and the reaction gas can be injected first when the substrate support (110) moves to one side of the second axis direction and scans.

[0091] Here, a linear source gas nozzle section (121) may be disposed between the first reaction gas nozzle section (122a) and the second reaction gas nozzle section (122b), and if the linear source gas nozzle section (121) is composed of multiple linear source gas nozzle sections, all of the multiple linear source gas nozzle sections (121) may be disposed between the first reaction gas nozzle section (122a) and the second reaction gas nozzle section (122b). At this time, the linear reaction gas nozzle section (122) may further include a third reaction gas nozzle section (122c) disposed between the multiple linear source gas nozzle sections (121), and the third reaction gas nozzle section (122c) may be at least one and may be disposed between the multiple linear source gas nozzle sections (121).

[0092] That is, among the plurality of linear source gas nozzle sections (121) and the plurality of linear reaction gas nozzle sections (122), the linear reaction gas nozzle sections (122) may each be disposed on the outer sides of the second axis direction of the linear deposition source (120). Since the reaction gas, such as a gas containing oxygen (O) atoms or nitrogen (N) atoms, must be sprayed after the source gas is deposited to form a thin film of oxide or nitride, the reaction gas can be sprayed at the end of each scan to form the oxide or nitride, and the oxide or nitride is stable so that even if the substrate (10) completely exits (or moves away) the section corresponding to the linear deposition source (120) during a full scan, there may be no effect (or change or deformation of the thin film).

[0093] And the deposition apparatus (100) according to the present invention may further include a selection control unit (153) for selecting the reaction gas nozzle unit (122a or 122b) in which the reaction gas is blocked among the first and second reaction gas nozzle units (122a, 122b) according to the direction of movement of the substrate support (110).

[0094] The selection control unit (153) can select the reaction gas nozzle unit (122a or 122b) in which the reaction gas is blocked among the first and second reaction gas nozzle units (122a, 122b) according to the direction of movement of the substrate support (110), and at the beginning of each scan, the source gas is first injected and deposited, and at the end of each scan, the reaction gas is injected and formed into an oxide or nitride and can be made to move out of the section corresponding to the linear deposition source (120).

[0095] For example, the selection control unit (153) can block the reaction gas of the second reaction gas nozzle unit (122b) when the substrate support (110) moves to one side of the second axis direction, and can block the reaction gas of the first reaction gas nozzle unit (122a) when the substrate support (110) moves to the other side of the second axis direction. That is, the selection control unit (153) can block the reaction gas of the second reaction gas nozzle unit (122b) located on the other side of the second axis direction of the linear deposition source (120) during a scan that moves the substrate support (110) to one side of the second axis direction, so that the source gas is injected first and deposited during the scan that moves to the one side. At this time, the first reaction gas nozzle section (122a) can oxidize or nitrate the source gas on the substrate (10) by injecting the reaction gas without blocking the reaction gas so that the reaction gas is injected at the end of the scan moving to the one side, and the source gas on the substrate (10) can be oxidized or nitrated by injecting the reaction gas from the third reaction gas nozzle section (122c) after the linear source gas nozzle section (121) to oxidize or nitrate the source gas on the substrate (10).

[0096] On the other hand, the selection control unit (153) can block the reaction gas of the first reaction gas nozzle unit (122a) positioned on one side of the second axis direction of the linear deposition source (120) during a scan that moves the substrate support (110) to the other side in the second axis direction, so that the source gas is injected first and deposited during the scan that moves to the other side. At this time, the second reaction gas nozzle unit (122b) can inject the reaction gas without blocking the reaction gas so that the reaction gas is injected at the end of the scan that moves to the other side, thereby oxidizing or nitriding the source gas on the substrate (10), and the source gas on the substrate (10) can also be oxidized or nitrided by injecting the reaction gas from the third reaction gas nozzle unit (122c) after the linear source gas nozzle unit (121) during the scan that moves to the other side to oxidize or nitrid the source gas on the substrate (10).

[0097] Meanwhile, when the linear source gas nozzle section (121) in which the source gas is blocked is selected by the selection control unit (153), the reaction gas of the reaction gas nozzle section (122a or 122b or 122c) adjacent to the linear source gas nozzle section (121) in which the source gas is blocked can be blocked, and when the substrate support (110) moves to one side of the second axis direction, the reaction gas of the reaction gas nozzle section (122a or 122c) adjacent to the linear source gas nozzle section (121) in which the source gas is blocked can be blocked, and when the substrate support (110) moves to the other side of the second axis direction, the reaction gas of the reaction gas nozzle section (122b or 122c) adjacent to the linear source gas nozzle section (121) in which the source gas is blocked can be blocked.

[0098] Here, the selection control unit (153) may include a source gas selection control unit (153a) for selecting a linear source gas nozzle unit (121) in which the source gas is blocked; and a reaction nozzle selection control unit (153b) for selecting a reaction gas nozzle unit (122a or 122b or 122c) in which the reaction gas is blocked, wherein the source gas selection control unit (153a) may select the linear source gas nozzle unit (121) in which the source gas is blocked, and the reaction nozzle selection control unit (153b) may select the reaction gas nozzle unit (122a or 122b) in which the reaction gas is blocked according to the direction of movement of the substrate support (110), and may select the reaction gas nozzle unit (122a or 122b or 122c) in which the reaction gas is blocked according to the selection of the source gas selection control unit (153a). Additionally, the injection control unit (151), plasma control unit (152), and selection control unit (153) may be integrated to form a single control unit (150).

[0099] The linear deposition source (120) may further include a purge nozzle section (123) that sprays purge gas and is positioned side by side along the second axis direction of each of the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122). The purge nozzle section (123) may be positioned extending in the first axis direction (11) and positioned side by side along the second axis direction of each of the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122), and may be positioned side by side along the first axis direction (11) with the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) between the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122). Here, the purge nozzle section (123) can spray purge gas supplied from a purge gas supply section (not shown), and through the purge gas, it can purge residual gas and / or by-products that are not adsorbed on the substrate (10), etc., in addition to the source material (layer) and / or reaction material (layer) adsorbed on the substrate (10) in atomic layer units. At this time, the purge gas and the residual gas and / or by-products (or the excess gas) can be exhausted (or discharged) to the outside (e.g., outside the chamber) through a pumping hole (125), and the pumping hole (125) can be provided between the linear source gas nozzle section (121) and the purge nozzle section (123), between the linear reaction gas nozzle section (122) and the purge nozzle section (123), and / or between a plurality of purge nozzle sections (123). Here, the purge gas may include an inert gas such as nitrogen (N2).

[0100] Additionally, the purge nozzle section (123) can spatially divide the source gas and the reaction gas on the substrate (10), and through the purge nozzle section (123), the source gas and the reaction gas sprayed from the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122), respectively, can be spatially divided so that the source material (layer) and the reaction material (layer) in atomic layer units can be sequentially stacked, and the source material (layer) and the reaction material (layer) can react to form the thin film.

[0101] At this time, the purge nozzle section (123) may be positioned on each side of the second axis direction of the linear source gas nozzle section (121) and on each side of the second axis direction of the linear reaction gas nozzle section (122), and in this case, (two) purge nozzle sections (123) may be positioned consecutively (or continuously) between the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122). When (two) purge nozzle sections (123) are positioned consecutively in this way, the linear source gas nozzle section (121) and the linear reaction gas nozzle section (122) can be more effectively spatially divided, and the source gas and the reaction gas can be spatially divided on the substrate (10) so that the source material (layer) and the reaction material (layer) in atomic layer units can be sequentially and effectively deposited (or stacked). In addition, before the source material (layer) and the reaction material (layer) are deposited on the substrate (10), the contact between the source gas and the reaction gas in the air (i.e., between the substrate and the linear deposition source) is fundamentally blocked, thereby preventing the thin film from being deposited in a lump form rather than in atomic layer units. Meanwhile, since the residual gas of the source gas and the residual gas of the reaction gas may not meet each other while being exhausted, it is also possible to prevent the residual gas of the source gas and the residual gas of the reaction gas from reacting and depositing the thin film on the exhaust channel (inner wall of the channel).

[0103] FIG. 3 is a flowchart illustrating a deposition method according to another embodiment of the present invention.

[0104] With reference to FIG. 3, a deposition method according to another embodiment of the present invention will be examined in more detail, and details that overlap with the previously described parts regarding the deposition apparatus according to one embodiment of the present invention will be omitted.

[0105] A deposition method according to another embodiment of the present invention may include: a process (S100) of moving a substrate support, on which a substrate is supported, in a second axis direction intersecting the first axis direction so as to pass through a section corresponding to a linear deposition source in which a linear source gas nozzle part and a linear reaction gas nozzle part are arranged parallel to each other in a first axis direction; a process (S200) of detecting the position of the substrate support in the second axis direction; and a process (S300) of individually controlling the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part according to the detected position of the substrate support in the second axis direction.

[0106] First, a substrate support on which the substrate is supported is moved in a second axis direction intersecting the first axis direction so as to pass through a section corresponding to a linear deposition source in which a linear source gas nozzle section and a linear reaction gas nozzle section are arranged parallel to each other in the first axis direction (S100). The substrate support on which the substrate is supported can be moved in a second axis direction intersecting the first axis direction so as to pass through a section corresponding to a linear deposition source in which a linear source gas nozzle section and a linear reaction gas nozzle section are arranged parallel to each other in the first axis direction, and the substrate support can be moved in the second axis direction through a driving unit to deposit source gas and reaction gas in atomic layer units over the entire area of ​​the substrate, and source material (layer) and reaction material (layer) in atomic layer units can be alternately stacked, and a thin film can be formed by the reaction of the source material and the reaction material.

[0107] Next, the second axial position of the substrate support is detected (S200). The second axial position of the substrate support can be detected (or recognized) through a position detection unit, and the detected second axial position of the substrate support can be transmitted to a spray control unit to individually control the gas injection of the linear source gas nozzle unit and the linear reaction gas nozzle unit. At this time, the position detection unit can detect the second axial position of the substrate support using various methods, such as a sensor.

[0108] And, according to the second axial position of the detected substrate support, the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part is individually controlled (S300). The gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part can be individually controlled according to the second axial position of the substrate support detected (or recognized) through the injection control part, and the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part can be controlled by turning the gas injection on / off, and the start and end of the gas injection can be determined depending on which nozzle part, the linear source gas nozzle part or the linear reaction gas nozzle part, the substrate support passes through.

[0109] The above individually controlling process (S300) may include a process (S310) of controlling the gas injection of the linear source gas nozzle section to inject the source gas when the substrate support passes through a section corresponding to the linear source gas nozzle section; and a process (S320) of controlling the gas injection of the linear reaction gas nozzle section to inject the reaction gas when the substrate support passes through a section corresponding to the linear reaction gas nozzle section.

[0110] The gas injection of the linear source gas nozzle part can be controlled so that the source gas is injected when the substrate support passes through a section corresponding to the linear source gas nozzle part (S310). The gas injection of the linear source gas nozzle part can be controlled according to the second axial position of the substrate support through the injection control part so that the source gas is injected when the substrate support and / or the substrate passes through a section corresponding to the linear source gas nozzle part, and the source gas can be injected only when the substrate and / or the substrate support is positioned opposite the linear source gas nozzle part.

[0111] In addition, the gas injection of the linear reaction gas nozzle part can be controlled to inject the reaction gas when the substrate passes through a section corresponding to the linear reaction gas nozzle part (S320). Through the injection control part, the gas injection of the linear reaction gas nozzle part can be controlled according to the second axial position of the substrate support so that the reaction gas can be injected when the substrate support and / or the substrate passes through a section corresponding to the linear reaction gas nozzle part, and the reaction gas can be injected only when the substrate and / or the substrate support is positioned opposite the linear reaction gas nozzle part.

[0112] In the above individually controlled process (S300), the linear source gas nozzle section and the linear reaction gas nozzle section can be individually controlled according to the movement of the substrate support to sequentially start (or turn on) gas injection. The linear source gas nozzle section and the linear reaction gas nozzle section can be individually controlled according to the movement of the substrate support, and the linear source gas nozzle section and the linear reaction gas nozzle section can be individually controlled by the injection control section according to the movement of the substrate support to sequentially start gas injection. Through this, the source gas can be injected when the substrate and / or the substrate support are positioned opposite (or corresponding to) the linear source gas nozzle part, and the reaction gas can be injected when the substrate and / or the substrate support are positioned opposite the linear reaction gas nozzle part. Accordingly, the source gas and / or the reaction gas can be injected only at the corresponding location (i.e., the substrate and / or the substrate support) without being injected into parts other than the substrate and / or the substrate support (e.g., the chamber and the driving part, etc.), thereby reducing unnecessary gas consumption (or the amount of gas that cannot be deposited on the substrate because it is not injected onto the substrate). In addition, the source gas and / or the reaction gas may be sprayed only onto the substrate and / or the substrate support, thereby suppressing or preventing the deposition of the source gas and / or the reaction gas on parts other than the substrate and / or the substrate support, minimizing contamination of parts other than the substrate and / or the substrate support by the deposition of the source gas and / or the reaction gas, and preventing or suppressing the generation of particles (during the process) caused by the peeling of contaminants deposited on parts other than the substrate and / or the substrate support.Meanwhile, in the above individually controlled process (S300), the linear source gas nozzle part and the linear reaction gas nozzle part may be individually controlled according to the movement of the substrate support to sequentially terminate (or turn off) the gas injection.

[0113] Accordingly, in the present invention, the gas injection of the linear source gas nozzle and the linear reaction gas nozzle is individually controlled according to the second axial position of the substrate support detected by the position detection unit, so that gas injection can be started sequentially in accordance with the arrival (or reaching) of the substrate and / or the substrate support at positions corresponding to (or opposite to) the linear source gas nozzle and the linear reaction gas nozzle, respectively. Accordingly, unnecessary gas consumption that is not injected onto the substrate and thus cannot participate in deposition can be reduced, and the deposition of the source gas and / or the reaction gas on parts other than the substrate and / or the substrate support can be suppressed or prevented, thereby minimizing contamination of parts other than the substrate and / or the substrate support caused by the deposition of the source gas and / or the reaction gas. Accordingly, the generation of particles caused by the peeling of contaminants deposited on parts other than the substrate and / or the substrate support can be prevented or suppressed, and the degradation of the properties of the deposited thin film caused by particles can be prevented or suppressed, and cleaning of the deposition device, such as the chamber, may be eliminated or the cleaning cycle to prevent particle generation may be increased, thereby reducing cleaning costs.

[0114] The substrate support may include a rim portion provided on both sides of the second axial direction that is longer than the substrate in the second axial direction. The rim portion may be provided on both sides of the substrate support in the second axial direction that is longer than the substrate in the second axial direction, and either side of the two sides in the second axial direction may enter the section corresponding to the linear deposition source before the substrate, and the other side (or the opposite side) may exit (or move away) from the section corresponding to the linear deposition source later than the substrate.

[0115] At this time, the process of controlling the gas injection of the linear source gas nozzle part (S310) may include: a process of starting the injection of the source gas (S311) when the edge part on the side of the second axis direction opposite to the direction of movement of the substrate support enters the section corresponding to the linear source gas nozzle part; and a process of ending the injection of the source gas (S312) when the edge part on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear source gas nozzle part.

[0116] The injection of the source gas can be started when the edge portion on the side of the second axis direction that is in the same direction as the movement direction of the substrate support enters the section corresponding to the linear source gas nozzle portion (S311). The injection of the source gas can be started (or turned on) when the edge portion on the side of the substrate support that is in the same direction as the movement direction of the substrate enters the section corresponding to the linear source gas nozzle portion, so that the source gas is injected as the substrate enters the section corresponding to the linear source gas nozzle portion, and so that there is no part of the substrate that passes through the section corresponding to the linear source gas nozzle portion without the source gas being injected.

[0117] Next, the injection of the source gas can be terminated when the edge portion on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear source gas nozzle portion (S312). When the edge portion on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear source gas nozzle portion, the substrate does not completely exit the section corresponding to the linear source gas nozzle portion, and the injection of the source gas can be terminated (or turned off) before the substrate completely exits the section corresponding to the linear source gas nozzle portion, thereby preventing the substrate from exiting the section corresponding to the linear source gas nozzle portion to the substrate support before the gas injection (i.e., the injection of the source gas) is blocked, and preventing the source gas from being deposited on a part other than the substrate and / or the substrate support.

[0118] And the process of controlling the gas injection of the linear reaction gas nozzle section (S320) may include: a process of starting the injection of the reaction gas (S321) when the edge section on the side of the second axis direction opposite to the direction of movement of the substrate support enters the section corresponding to the linear reaction gas nozzle section; and a process of ending the injection of the reaction gas (S322) when the edge section on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear reaction gas nozzle section.

[0119] The injection of the reaction gas can be started when the edge portion on the side of the second axis direction that is in the same direction as the movement direction of the substrate support enters the section corresponding to the linear reaction gas nozzle portion (S321). Likewise, the linear reaction gas nozzle portion can also start the injection of the reaction gas when the edge portion on the side of the movement direction of the substrate support enters the section corresponding to the linear reaction gas nozzle portion, so that the reaction gas is injected as the substrate enters the section corresponding to the linear reaction gas nozzle portion, and so that there is no part of the substrate that passes through the section corresponding to the linear reaction gas nozzle portion without the reaction gas being injected.

[0120] Next, the injection of the reaction gas can be terminated when the rim portion on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear reaction gas nozzle portion (S322). Since the substrate does not completely exit the section corresponding to the linear reaction gas nozzle portion when the rim portion on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear reaction gas nozzle portion, the injection of the reaction gas can be terminated before the substrate completely exits the section corresponding to the linear reaction gas nozzle portion, thereby preventing the substrate support from exiting the section corresponding to the linear reaction gas nozzle portion before the gas injection (i.e., the injection of the reaction gas) is blocked, and preventing the reaction gas from being deposited on a part other than the substrate and / or the substrate support.

[0121] The process of detecting the above position (S200) may include a process (S210) of outputting position and speed information of the substrate support using an encoder.

[0122] Position and speed information of the substrate support can be output using an encoder (S210). The encoder can output position and speed information of the substrate support and can output information of the position and speed of the substrate support as an electrical signal. For example, the encoder can be attached to a motor to read the position of the motor and detect the motor's rotational speed, amount of rotation, and direction of rotation, and as a linear encoder, it can be attached to the substrate support or the moving part of the drive unit and used like a scale with precise grid markings to read pulses as the sensor passes over the marked area, thereby converting the reading into a linear distance traveled.

[0123] In addition, in the individually controlled process (S300) above, the source gas valve of the linear source gas nozzle section and the reaction gas valve of the linear reaction gas nozzle section can be switched according to the position and speed information of the substrate support outputted. The source gas valve of the linear source gas nozzle section and the reaction gas valve of the linear reaction gas nozzle section can be switched according to the position and speed information of the substrate support outputted through the injection control section. When the injection control section switches the source gas valve and the reaction gas valve according to the position and speed information of the substrate support outputted, the source gas valve and the reaction gas valve can be switched using the delay time resulting from the switching (or switching) of the source gas valve and the reaction gas valve and the (movement) speed of the substrate support, thereby allowing the source gas and the reaction gas to be deposited from the leading edge (or front end) of the substrate and deposited on the entire surface (surface) of the substrate up to the trailing edge (or rear end) of the substrate.

[0124] The deposition method according to the present invention may further include a process (S150) of generating plasma in the linear reaction gas nozzle portion when the substrate support moves.

[0125] Plasma can be generated in the linear reaction gas nozzle section when the substrate support is moved (S150). Plasma can be provided to the linear reaction gas nozzle section through the plasma generation section, and the reaction gas can be excited to form a radical state. Through this, the reaction gas in the radical state can be sprayed from the linear reaction gas nozzle section. The generation of the plasma can be controlled and the plasma can be turned on / off depending on whether the substrate support is moved through the plasma control section, and the plasma can be generated when the deposition process is performed by moving the substrate support (or when the substrate support is moved). At this time, the timing of the plasma turning on / off may differ from the timing of the reaction gas (the reaction gas valve), and the turning on / off of the plasma may not occur simultaneously with the turning on / off of the reaction gas.

[0126] For example, the plasma may be continuously turned on (or formed) while performing the deposition process by moving the substrate support, regardless of whether the substrate support and / or the substrate is facing the linear reaction gas nozzle section, and the reaction gas may be turned on (or injected) only when the substrate support and / or the substrate is facing the linear reaction gas nozzle section according to the second axial position of the substrate support.

[0127] Furthermore, the process (S320) of controlling the gas injection of the linear reaction gas nozzle section can be performed according to the second axis position of the substrate support while the plasma is formed. The plasma can be turned on when the movement of the substrate support begins for the deposition process and turned off when the movement of the substrate support is stopped to end the deposition process. In addition, to prevent unnecessary deposition of the reaction gas and gas consumption, the gas injection of the linear reaction gas nozzle section can be controlled according to the second axis position of the substrate support. By starting the injection of the reaction gas when the edge section on the side identical to the direction of movement of the substrate support among the two sides of the second axis enters the section corresponding to the linear reaction gas nozzle section, and ending the injection of the reaction gas when the edge section on the side opposite to the direction of movement of the substrate support enters the section corresponding to the linear reaction gas nozzle section, the reaction gas can be injected only when the substrate support and / or the substrate is facing the linear reaction gas nozzle section.

[0128] Accordingly, when the substrate support is moved for the deposition process through the plasma control unit, the plasma is generated (or turned on) so that the stabilized plasma can be formed when the substrate enters the section corresponding to the linear reaction gas nozzle unit, and in the state where the stabilized plasma is formed, the gas injection of the linear reaction gas nozzle unit is controlled according to the second axial position of the substrate support so that the reaction gas in a radical state can be stably injected toward the substrate from the linear reaction gas nozzle unit.

[0129] The above linear source gas nozzle section is composed of a plurality of units, and a plurality of source gases containing different metals can be supplied to each of them. At this time, the linear source gas nozzle section and the linear reaction gas nozzle section may be arranged alternately with each other in the second axis direction.

[0130] For example, by supplying and injecting different source gases to each of the plurality of linear source gas nozzles, a multi-component (e.g., In / Ga / Zn) atomic layer can be deposited, and a complex metal oxide or nitride such as IGZO (In / Ga / Zn Oxide) can be deposited. At this time, the source gas containing different metals can be supplied to each of the linear source gas nozzles.

[0131] And the process of moving in the second axis direction (S100) may include a process of reciprocating the substrate support (S110) so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source.

[0132] The substrate support can be reciprocated so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source (S110). The substrate support can be reciprocated through the driving unit so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, and by the driving unit causing the entire area of ​​the substrate to pass through a section corresponding to the linear deposition source, a thin film (or the source material (layer) and the reaction material (layer)) can be deposited on the entire area of ​​the substrate, and the thin film can be uniformly deposited on the entire area of ​​the substrate by moving away from (or passing through) the section corresponding to the linear deposition source. In addition, by the driving unit reciprocating the substrate support, a material layer (or the source material (layer) and the reaction material (layer)) can be stacked multiple times on the entire area of ​​the substrate, thereby forming (or depositing) a thin film of a desired thickness on the substrate.

[0133] Here, the deposition method according to the present invention may further include the step (S160) of selecting a linear source gas nozzle part in which the source gas is blocked among a plurality of linear source gas nozzle parts for every scan in which the entire area of ​​the substrate passes through a section corresponding to the linear deposition source.

[0134] For every scan in which the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, the linear source gas nozzle section in which the source gas is blocked among the plurality of linear source gas nozzle sections can be selected (S160). Through the selection control unit, for every scan in which the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, the linear source gas nozzle section in which the source gas is blocked among the plurality of linear source gas nozzle sections can be selected, and the plurality of source gases can be selectively deposited on the substrate, and the composition (i.e., the ratio of the composite metal) in the composite metal oxide and composite metal nitride can be controlled (or adjusted).

[0135] For example, in order to sequentially deposit one source gas at a time, after depositing all of the multiple source gases in the first scan, in the second scan, the source gas that was deposited last in the first scan can be blocked and only the remaining source gas(s) can be deposited, and in the third scan, the source gas that was deposited last in the second scan can be blocked and only the remaining source gas(s) can be deposited. In the n-th scan, the source gas that was deposited last in the n-1 scan can be blocked and only the remaining source gas(s) can be deposited, and in this manner, the thin film (or the source material (layer)) can be deposited up to the n-th scan.

[0136] At this time, the linear source gas nozzle that sprayed the source gas that was last deposited in the previous scan (or the n-1 scan) can be selected through the selection control unit to block the source gas in this scan (or the n-1 scan), and the linear source gas nozzle that sprayed the source gas that was last deposited in the previous scan can be selected for every scan in which the entire area of ​​the substrate passes through a section corresponding to the linear deposition source.

[0137] The linear reaction gas nozzle section may include first and second reaction gas nozzle sections respectively disposed on one side and the other side of the second axis direction of the linear deposition source such that the linear source gas nozzle section is disposed between them. The first reaction gas nozzle section may be disposed on one side of the second axis direction of the linear deposition source, and the reaction gas may be injected (or deposited) last when the substrate support moves to one side of the second axis direction and scans, and the reaction gas may be injected first when the substrate support moves to the other side of the second axis direction and scans.

[0138] The second reaction gas nozzle may be positioned on the other side of the second axis direction of the linear deposition source, and the reaction gas may be injected last when the substrate support moves to the other side of the second axis direction and scans, and the reaction gas may be injected first when the substrate support moves to one side of the second axis direction and scans.

[0139] Here, the linear source gas nozzle section may be disposed between the first reaction gas nozzle section and the second reaction gas nozzle section, and if the linear source gas nozzle section is composed of multiple linear source gas nozzle sections, all of the multiple linear source gas nozzle sections may be disposed between the first reaction gas nozzle section and the second reaction gas nozzle section. At this time, the linear reaction gas nozzle section may further include a third reaction gas nozzle section disposed between the multiple linear source gas nozzle sections, and the third reaction gas nozzle section may be at least one and may be disposed between each of the multiple linear source gas nozzle sections.

[0140] And the deposition method according to the present invention may further include a step (S170) of selecting a reaction gas nozzle part among the first and second reaction gas nozzle parts in which the reaction gas is blocked according to the direction of movement of the substrate support.

[0141] Depending on the direction of movement of the substrate support, a reaction gas nozzle section among the first and second reaction gas nozzle sections in which the reaction gas is blocked can be selected (S170). Through the selection control unit, a reaction gas nozzle section among the first and second reaction gas nozzle sections in which the reaction gas is blocked can be selected according to the direction of movement of the substrate support, and at the beginning of each scan, the source gas is first injected and deposited, and at the end of each scan, the reaction gas is injected and formed into an oxide or nitride, so as to move out of the section corresponding to the linear deposition source.

[0142] The process of selecting the reaction gas nozzle part (S170) may include the process of selecting the second reaction gas nozzle part (S171) when the substrate support moves to one side of the second axis direction; and the process of selecting the first reaction gas nozzle part (S172) when the substrate support moves to the other side of the second axis direction.

[0143] When the substrate support moves to one side in the second axis direction, the second reaction gas nozzle section can be selected (S171). When scanning to move the substrate support to one side in the second axis direction through the selection control section, the reaction gas of the second reaction gas nozzle section located on the other side in the second axis direction of the linear deposition source can be blocked so that the source gas is injected first and deposited during the scan moving to the one side. At this time, the first reaction gas nozzle section can inject the reaction gas without blocking the reaction gas so that the reaction gas is injected at the end of the scan moving to the one side, thereby oxidizing or nitriding the source gas on the substrate, or the reaction gas can be injected from the third reaction gas nozzle section after the linear source gas nozzle section to oxidize or nitrid the source gas on the substrate.

[0144] In addition, when the substrate support moves to the other side in the second axis direction, the first reaction gas nozzle section can be selected (S172). When scanning to move the substrate support to the other side in the second axis direction through the selection control section, the reaction gas of the first reaction gas nozzle section positioned on one side in the second axis direction of the linear deposition source can be blocked so that the source gas is injected first and deposited during the scan moving to the other side. At this time, the second reaction gas nozzle section can inject the reaction gas without blocking the reaction gas so that the reaction gas is injected at the end of the scan moving to the other side, thereby oxidizing or nitriding the source gas on the substrate. Alternatively, during the scan moving to the other side, the reaction gas can be injected from the third reaction gas nozzle section after the linear source gas nozzle section to oxidize or nitrid the source gas on the substrate.

[0146] As such, in the present invention, gas injection from the linear source gas nozzle and the linear reaction gas nozzle is individually controlled according to the second axial position of the substrate support detected by the position detection unit. By sequentially starting gas injection in accordance with the arrival of the substrate at the position corresponding to the linear source gas nozzle and the linear reaction gas nozzle, respectively, the amount of unnecessary gas consumed that is not injected onto the substrate and thus cannot participate in deposition can be reduced. Furthermore, by suppressing or preventing the deposition of source gas and / or reaction gas on parts other than the substrate, contamination of parts other than the substrate caused by deposition can be minimized, and the generation of particles during the process caused by such contamination can be prevented or suppressed. Accordingly, the degradation of the properties of the deposited thin film caused by particles can be prevented or suppressed, and cleaning of the deposition apparatus may be eliminated or the cleaning cycle for preventing particle generation may be extended, thereby reducing cleaning costs. At this time, by providing a rim portion on the substrate support that is longer in the second axial direction than the substrate and controlling the gas injection of the linear source gas nozzle portion and the linear reaction gas nozzle portion according to the position of the rim portion, a delay time can be secured for switching between the source gas valve and the reaction gas valve, and due to the delay time, it is possible to prevent the substrate from passing through the section corresponding to the linear source gas nozzle portion and / or the linear reaction gas nozzle portion before the gas injection begins. In addition, even when the gas injection is terminated, by ensuring that gas is injected into the rim portion of the substrate support during the delay time, it is possible to prevent excess gas from spreading to other places and to induce the flow of excess gas toward the pumping hole so that it is exhausted into the pumping hole.

[0148] The term “on” as used in the above description includes cases of direct contact as well as cases where it is located facing the upper or lower surface without direct contact; it is possible to be located facing the entire upper or lower surface as well as partially facing it, and it is used to mean facing from a distance or in direct contact with the upper or lower surface.

[0150] Although preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the embodiments described above, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible without departing from the gist of the present invention as claimed in the claims. Accordingly, the technical scope of protection of the present invention should be determined by the following claims. Explanation of the symbols

[0151] 10 : Substrate 100 : Deposition device 110 : Substrate support 110a : Edge part 120: Linear deposition source 121: Linear source gas nozzle section 122: Linear reaction gas nozzle section 122a: First reaction gas nozzle section 122b: Second reaction gas nozzle section 123: Purge nozzle section 125 : Pumping hole 130 : Driving part 131 : Rail 132 : Moving part 140: Position detection unit 150: Control unit 151: Injection control unit 152: Plasma control unit 153: Selection control unit 160: Plasma generator 161 : Electrode part

Claims

Claim 1 A substrate support that supports a substrate; a linear deposition source comprising a linear source gas nozzle section and a linear reaction gas nozzle section that extend in a first axial direction across the substrate and are arranged parallel to each other, and which sprays a source gas and a reaction gas respectively onto the substrate; a driving unit that moves the substrate support in a second axial direction intersecting the first axial direction; a position detection unit that detects the position of the substrate support in the second axial direction; and a spray control unit that individually controls the spraying of gas from the linear source gas nozzle section and the linear reaction gas nozzle section according to the detected position of the substrate support in the second axial direction; and a plasma generation unit for providing plasma to the linear reaction gas nozzle section. The deposition apparatus further comprises: a plasma control unit that controls the generation of the plasma according to whether the substrate support moves; wherein the plasma control unit generates the plasma when the substrate support starts moving and continues to form the plasma during the movement of the substrate support; wherein the injection control unit controls the gas injection of the linear reaction gas nozzle unit to inject the reaction gas when the substrate support passes through a section corresponding to the linear reaction gas nozzle unit according to the second axis direction position of the substrate support while the plasma is formed; wherein the linear reaction gas nozzle unit includes first and second reaction gas nozzle units respectively disposed on one side and the other side of the second axis direction of the linear deposition source such that the linear source gas nozzle unit is disposed between each other; and wherein the selection control unit selects the reaction gas nozzle unit among the first and second reaction gas nozzle units in which the reaction gas is blocked according to the direction of movement of the substrate support. Claim 2 A deposition apparatus according to claim 1, wherein the injection control unit controls the gas injection of the linear source gas nozzle unit to inject the source gas when the substrate support passes through a section corresponding to the linear source gas nozzle unit, and the linear source gas nozzle unit and the linear reaction gas nozzle unit are individually controlled according to the movement of the substrate support to sequentially start gas injection. Claim 3 A deposition apparatus according to claim 2, wherein the substrate support includes a rim portion provided on both sides of the second axis direction that is longer in the second axis direction than the substrate, and the linear source gas nozzle portion starts spraying the source gas when the rim portion on the side of the second axis direction opposite to the direction of movement of the substrate support enters a section corresponding to the linear source gas nozzle portion, and terminates spraying the source gas when the rim portion on the side opposite to the direction of movement of the substrate support enters a section corresponding to the linear source gas nozzle portion, and the linear reaction gas nozzle portion starts spraying the reaction gas when the rim portion on the second axis direction opposite to the direction of movement of the substrate support enters a section corresponding to the linear reaction gas nozzle portion, and terminates spraying the reaction gas when the rim portion on the side opposite to the direction of movement of the substrate support enters a section corresponding to the linear reaction gas nozzle portion. Claim 4 A deposition apparatus according to claim 3, further comprising: a source gas valve provided in the linear source gas nozzle section; and a reaction gas valve provided in the linear reaction gas nozzle section; wherein the position detection section includes an encoder that outputs position and velocity information of the substrate support, and the injection control section switches the source gas valve and the reaction gas valve according to the output position and velocity information of the substrate support. Claim 5 delete Claim 6 delete Claim 7 A deposition apparatus according to claim 1, wherein the driving unit reciprocates the substrate support so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, and the linear source gas nozzle unit is composed of a plurality of such nozzle units, each having a plurality of source gases containing different metals supplied thereto, and further comprising a selection control unit that selects the linear source gas nozzle unit in which the source gas is blocked among the plurality of such nozzle units for every scan in which the entire area of ​​the substrate passes through a section corresponding to the linear deposition source. Claim 8 delete Claim 9 A deposition apparatus according to claim 1, wherein the selection control unit blocks the reaction gas of the second reaction gas nozzle unit when the substrate support moves to one side in the second axis direction, and blocks the reaction gas of the first reaction gas nozzle unit when the substrate support moves to the other side in the second axis direction. Claim 10 A deposition apparatus according to claim 1, wherein the linear deposition source further comprises a purge nozzle section that sprays purge gas and is arranged parallel to each other on both sides of the second axis direction of the linear source gas nozzle section and the linear reaction gas nozzle section. Claim 11 A process of moving a substrate support, on which a substrate is supported, in a second axis direction intersecting the first axis direction so as to pass through a section corresponding to a linear deposition source arranged parallel to each other, wherein a linear source gas nozzle section and a linear reaction gas nozzle section are extended in a first axis direction; a process of detecting the position of the substrate support in the second axis direction; The method includes a process of individually controlling the gas injection of the linear source gas nozzle and the linear reaction gas nozzle according to the second axial position of the detected substrate support; and further includes a process of generating plasma in the linear reaction gas nozzle when the substrate support moves, depending on whether the substrate support moves; wherein the individually controlling process includes a process of controlling the gas injection of the linear reaction gas nozzle so as to inject the reaction gas when the substrate support passes through a section corresponding to the linear reaction gas nozzle; wherein in the process of generating the plasma, the plasma is generated when the substrate support starts moving according to whether the substrate support moves, and the plasma is continuously formed during the movement of the substrate support; wherein the process of controlling the gas injection of the linear reaction gas nozzle is performed according to the second axial position of the substrate support while the plasma is formed; wherein the linear reaction gas nozzle includes first and second reaction gas nozzles respectively disposed on one side and the other side in the second axial direction of the linear deposition source so that the linear source gas nozzle is disposed between each other; and according to the direction of movement of the substrate support A deposition method further comprising the step of selecting a reaction gas nozzle portion among the first and second reaction gas nozzle portions in which the reaction gas is blocked. Claim 12 A deposition method according to claim 11, wherein the individually controlling process further includes a process of controlling the gas injection of the linear source gas nozzle part to inject the source gas when the substrate support passes through a section corresponding to the linear source gas nozzle part, and wherein, in the individually controlling process, the linear source gas nozzle part and the linear reaction gas nozzle part are individually controlled according to the movement of the substrate support to sequentially start gas injection. Claim 13 A deposition method according to claim 12, wherein the substrate support includes a rim portion provided on both sides of the second axis direction that is longer than the substrate in the second axis direction, and the process of controlling the gas injection of the linear source gas nozzle portion includes: the process of starting the injection of the source gas when the rim portion on the side of the second axis direction opposite to the direction of movement of the substrate support enters a section corresponding to the linear source gas nozzle portion; and the process of terminating the injection of the source gas when the rim portion on the side opposite to the direction of movement of the substrate support enters a section corresponding to the linear source gas nozzle portion, and the process of controlling the gas injection of the linear reaction gas nozzle portion includes: the process of starting the injection of the reaction gas when the rim portion on the side of the second axis direction opposite to the direction of movement of the substrate support enters a section corresponding to the linear reaction gas nozzle portion; and the process of terminating the injection of the reaction gas when the rim portion on the side opposite to the direction of movement of the substrate support enters a section corresponding to the linear reaction gas nozzle portion. Claim 14 A deposition method according to claim 13, wherein the process of detecting the position includes a process of outputting position and velocity information of the substrate support using an encoder, and wherein the process of individually controlling switches the source gas valve of the linear source gas nozzle part and the reaction gas valve of the linear reaction gas nozzle part according to the output position and velocity information of the substrate support. Claim 15 delete Claim 16 A deposition method according to claim 11, wherein the linear source gas nozzle portion is composed of a plurality of portions, wherein a plurality of source gases containing different metals are supplied to each portion, and the process of moving in the second axis direction includes the process of reciprocating the substrate support so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, and further includes the process of selecting the linear source gas nozzle portion among the plurality of linear source gas nozzle portions in which the source gas is blocked for every scan in which the entire area of ​​the substrate passes through a section corresponding to the linear deposition source. Claim 17 delete Claim 18 A deposition method according to claim 11, wherein the process of selecting the reaction gas nozzle part comprises: the process of selecting the second reaction gas nozzle part when the substrate support moves to one side of the second axis direction; and the process of selecting the first reaction gas nozzle part when the substrate support moves to the other side of the second axis direction.

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