Semiconductor fault analysis device

Abstract

A semiconductor fault analysis device (1) comprises a tester (2) that applies a stimulus signal to a semiconductor device (100), a light source (3) that generates irradiation light L1 irradiated onto the semiconductor device (100), a fixing lens (4) that is positioned on the optical path of the irradiation light L1, a light detection unit (5) that receives reflected light L2 and outputs a detection signal according to the reflected light L2, an optical system (6) that is positioned between the light source (3) and the fixing lens (4) and emits irradiation light L1 to the semiconductor device (100) through the fixing lens (4), and is positioned between the fixing lens (4) and the light detection unit (5) and emits reflected light L2 received through the fixing lens (4) to the light detection unit (5), and a computer (7) that obtains information regarding the fault location of the semiconductor device (100) using the detection signal. The light source (3) emits irradiation light L1 having a center wavelength of 880 nm or more and 980 nm or less. The fixing lens (4) is formed of GaAs.

Description

Technology Field

[0001] The present invention relates to a semiconductor fault analysis device. Background Technology

[0002] The miniaturization of semiconductor devices is progressing. Due to this miniaturization, improvements in photolithography and patterning technologies for manufacturing semiconductor devices are required. Technologies for inspecting whether semiconductor devices manufactured using these techniques operate normally are also important. Furthermore, if a semiconductor device does not operate normally, technologies to identify the cause of the defect are also crucial.

[0003] Patent documents 1 and 2 disclose an apparatus for inspecting a semiconductor device. The inspection apparatus disclosed in patent documents 1 and 2 irradiates light onto a semiconductor device to which an electrical signal is applied. The light irradiated onto the semiconductor device becomes reflected light according to the state of the semiconductor device. Then, the inspection apparatus disclosed in patent documents 1 and 2 obtains information regarding the operating state of the semiconductor device using the reflected light. The inspection apparatus of patent document 1 obtains information regarding a part of the semiconductor device operating at a predetermined frequency. The inspection apparatus of patent document 2 obtains information regarding a heat source generated at a failure point of the semiconductor device. Prior art literature

[0004] Patent Document 1: Japanese Patent Publication No. 2014-92514 Patent Document 2: International Publication No. 2016 / 056110 The problem to be solved

[0005] In the technical field of semiconductor fault analysis devices, further improvement in resolution is desired to analyze finer regions.

[0006] The present invention provides a semiconductor fault analysis device capable of improving resolution. means of solving the problem

[0007] One aspect of the present invention is a semiconductor fault analysis device that analyzes a fault location included in a semiconductor device using a response to a stimulus signal. The semiconductor fault analysis device comprises a signal generation unit that applies a stimulus signal to a semiconductor device, a light source that generates irradiation light irradiated onto the semiconductor device, a fixing lens disposed in the optical path of the irradiation light, a light detection unit that receives reflected light generated by the irradiation light being reflected from the semiconductor device and outputs a detection signal according to the reflected light, an optical system disposed between the light source and the fixing lens that emits irradiation light onto the semiconductor device through the fixing lens and disposed between the fixing lens and the light detection unit that emits reflected light received through the fixing lens to the light detection unit, and an analysis unit that obtains information regarding a fault location of the semiconductor device from the detection signal. The light source emits irradiation light having a center wavelength of 880 nm or more and 980 nm or less. The fixing lens is formed of gallium arsenide (GaAs).

[0008] When a semiconductor failure analysis device identifies a failure point of a semiconductor device to which an excitation signal is given, it irradiates the semiconductor device with an irradiation light having a center wavelength of 880 nm or more and 980 nm or less through a fixed lens formed of gallium arsenide. The irradiation light having a center wavelength of 880 nm or more and 980 nm or less sufficiently transmits through the semiconductor device to be analyzed. Therefore, it is possible to obtain reflected light with an intensity capable of identifying the failure point. In addition, the refractive index of the fixed lens formed of gallium arsenide is higher than the refractive index of air. Therefore, the numerical aperture (NA) can be increased. As a result, it is possible to reduce the spot diameter of the irradiation light, thereby improving the resolution.

[0009] In the work form, the light source may emit irradiating light with a central wavelength of 900 nm or more and 960 nm or less. With this configuration, the resolution can be appropriately improved.

[0010] In one form, the analysis unit may have a heat source location specification unit. Based on a detection signal and a stimulus signal, the heat source location specification unit may specify the location of a heat source generated in a semiconductor device in response to a stimulus signal. With this configuration, the location of a heat source generated inside a semiconductor device can be specified.

[0011] In one form, the analysis unit may have an operating frequency specification unit. Based on the detection signal and the stimulus signal, the operating frequency specification unit may specify a position that operates at a predetermined frequency generated in the semiconductor device as a response to the stimulus signal. According to this configuration, a position that operates at a predetermined frequency generated in the semiconductor device can be specified. Effects of the invention

[0012] According to the present invention, a semiconductor failure analysis device capable of improving resolution is provided. Brief explanation of the drawing

[0013] Figure 1 is a block diagram showing the components of a semiconductor fault analysis device. FIG. 2 is a figure for illustrating an example of a means for specifying a failure point of a semiconductor device. Figure 3 is a graph showing the relationship between the wavelength of light and the light transmittance for each material constituting the fixing lens. Figure 4 is a graph showing the relationship between the wavelength of light and the refractive index for each material constituting the fixing lens. Figure 5 is a graph showing the relationship between the wavelength of light and the light transmittance of a fixed lens formed by gallium arsenide. Figure 6 is a graph showing the light transmittance of silicon. Specific details for implementing the invention

[0014] Hereinafter, embodiments for implementing the present invention will be described in detail with reference to the attached drawings. In the description of the drawings, the same reference numerals are assigned to identical elements, and redundant descriptions are omitted.

[0015] As shown in FIG. 1, the semiconductor fault analysis device identifies the fault points included in the test object, such as the semiconductor device (100). In the following description, the semiconductor fault analysis device is simply referred to as the analysis device (1).

[0016] As for the semiconductor device (100), examples include an integrated circuit having a PN junction such as a transistor (e.g., Small Scale Integration (SSI), Medium Scale Integration (MSI), Large Scale Integration (LSI), Very Large Scale Integration (VLSI), Ultra Large Scale Integration (ULSI), Giga Scale Integration (GSI)), a power device such as a high-current / high-voltage MOS transistor and a bipolar transistor, and a memory / storage device.

[0017] Additionally, the test object is not limited to a diced semiconductor device (100). The test object may be a semiconductor wafer on which a plurality of semiconductor devices (100) are formed.

[0018] FIG. 2 is a diagram conceptually illustrating a method for identifying a fault location. The semiconductor device (100) shown in FIG. 2 is positioned in a configuration placed on an analysis device (1). In FIG. 2, the surface receiving the irradiation light L1 is shown facing upward. The semiconductor device (100) has a stacked structure, for example, including a protective layer (101), a wiring layer (102), a process layer (103), an insulating layer (104), and a substrate (105). The wiring layer (102) includes a wiring pattern made of a metal such as gold or aluminum. The process layer (103) includes a plurality of electrical functional parts such as a MOS transistor (103a). The substrate (105) is formed of silicon. The thickness of the substrate (105) is 50 nm or more and approximately 200 nm. For example, the thickness of the substrate (105) is 80 nm. When light is irradiated onto the semiconductor device (100), light is transmitted through a certain layer. Also, light is reflected from another layer. For example, when light is irradiated from the substrate (105) side, the light may pass through the substrate (105) and the insulating layer (104). Also, when light is irradiated from the substrate (105) side, the light may be reflected from the process layer (103).

[0019] The intensity of the reflected light is fundamentally smaller than the intensity of the incident light L1. That is, the intensity of the reflected light is attenuated by factors that the light receives while passing through the substrate (105) and the insulating layer (104). For example, the light is affected by the light transmittance of the material constituting the substrate (105). Also, the intensity of the light is affected by the refractive index of the material constituting the light path. Additionally, the intensity of the light is affected by the electric field formed in the layer constituting the light path. Accordingly, the ratio of the intensity of the reflected light to the intensity of the incident light is defined as the apparent reflectance. The change in reflectance reflects the change in refractive index and the influence of the electric field. Therefore, by obtaining the distribution of reflectance, the internal state of the semiconductor device (100) can be known. For example, it is assumed that a point (102a) with a high electrical resistance value occurs in the wiring layer (102), and that Joule heating occurs at that point (102a). As a result, a point (105a) is created in which a change occurs in the refractive index of the insulating layer (104) and the substrate (105) whose temperature has risen due to Joule heating. The change in refractive index manifests as a change in reflectance. That is, by knowing the distribution of reflectance, it becomes possible to identify the location of the point causing abnormal heat generation. The location of the point causing abnormal heat generation is the location of the failure point.

[0020] Refer again to FIG. 1. The analysis device (1) has a tester (2) (signal generation unit), a light source (3), a fixing lens (4), a light detection unit (5), an optical system (6), and a computer (7). The analysis device (1) may have other additional components. For example, the analysis device (1) may have a stage that moves a semiconductor device (100) relative to the optical system (6).

[0021] The tester (2) outputs a stimulation signal. The tester (2) is connected to a semiconductor device (100). The tester (2) applies a stimulation signal to the semiconductor device (100). The tester (2) generates a stimulation signal based on a control signal input from a computer (7). The tester (2) initiates and stops the output of the stimulation signal based on the control signal. The characteristics of the stimulation signal may be determined by the mode of analysis. Also, a power source or a pulse generator, etc., may be used as the tester (2).

[0022] For example, one aspect of the analysis is the identification of the location of the heat source. When identifying the location of the heat source, the tester (2) provides a modulation current of a relatively low frequency as a stimulus signal. For example, if a short-circuited point is included inside the semiconductor device (100), the short-circuited point generates heat due to the modulation current. As a result, a heat source is generated in the semiconductor device (100). The temperature of the heat source generating heat due to the modulation current changes periodically according to the frequency of the modulation current. The change in temperature causes a change in the refractive index of the material through which the irradiated light and reflected light pass, as well as the surroundings of the heat source. The change in the refractive index causes a change in the intensity of the reflected light. As a result, the reflectance, which is the degree of the intensity of the reflected light relative to the intensity of the irradiated light, changes. By utilizing the change in reflectance caused by the temperature change of the heat source as a response to the stimulus signal, a short-circuited point, which is an example of a fault point included in the semiconductor device (100), can be identified.

[0023] For example, another aspect of analysis is the identification of circuit locations operating at a target frequency. Optical probing technology is known as such an analysis technique. Optical probing technology is also referred to as EOP (Electro-Optical Probing) or EOFM (Electro-Optical Frequency Mapping). In optical probing technology, light emitted from a light source is irradiated onto an integrated circuit. Next, reflected light reflected from the integrated circuit is detected by an optical sensor. Next, a detection signal is acquired from the optical sensor. Then, a signal component having a target frequency is selected from the acquired detection signal. The amplitude energy of this signal component is displayed as a temporal progression. Additionally, the amplitude energy is displayed as a two-dimensional mapping. That is, in optical probing technology, a fault analysis of the semiconductor device (100) is performed based on the intensity modulation of light emitted from the semiconductor device (100) during operation. Accordingly, the tester (2) applies an electrical signal having a predetermined modulation frequency to the semiconductor device (100). In this case, the modulation frequency may be higher than the frequency of the stimulation signal used for the analysis to determine the location of the heat source. For example, the tester (2) provides a driving current with a frequency equivalent to the driving signal of the semiconductor device (100) as a stimulation signal.

[0024] As described above, there are several types of modes of interpretation. However, the difference is that the first mode of the stimulus signal applied to the semiconductor device (100) is the first mode of the stimulus signal, and the second mode is the processing content of the detection signal obtained according to the stimulus signal. That is, even if the modes of interpretation are different, there is generally no difference in the configuration of the interpretation device (1).

[0025] The light source (3) generates irradiation light L1. The center wavelength of the irradiation light L1 may be 880 nm or more and 980 nm or less. When the center wavelength is 880 nm or more and 980 nm or less, the irradiation light L1 may have a band of about 20 nm. The center wavelength of the irradiation light L1 may be 900 nm or more and 960 nm or less. When the center wavelength is 900 nm or more and 960 nm or less, the irradiation light L1 may have a band of about 20 nm.

[0026] The light source (3) may appropriately adopt a configuration capable of emitting irradiating light L1 having the above-mentioned wavelength characteristics. For example, the light source (3) may be composed of an SLD (Super Luminescent Diode) or an LED (Light Emitting Diode). Also, the light source (3) may be composed of an incoherent light source, such as a combination of a lamp light source and an optical filter such as a bandpass filter. The light source (3) may be a laser light source, such as an LD (Laser Diode). The irradiating light L1 may be CW light. The irradiating light L1 may be pulsed light.

[0027] The illumination light L1 output from the light source (3) is first incident on the optical system (6). The optical system (6) guides the illumination light L1 to the correction lens (4). For example, the optical system (6) includes a polarizing beam splitter (61) and an objective lens (62). In addition, the optical system (6) may appropriately employ optical system components for the illumination light L1 in addition to these. For example, the optical system (6) may include an optical scanner. The optical scanner changes the irradiation position of the illumination light L1 in the semiconductor device (100). The optical scanner is, for example, a galvanometer mirror scanner, a polygon mirror scanner, a MEMS mirror scanner, etc. The optical scanner guides the illumination light L1 to a desired position in the semiconductor device (100). The illumination light L1 output from the optical system (6) is irradiated onto the semiconductor device (100) through the correction lens (4). More specifically, the irradiation light L1 is irradiated to a measurement point set for the semiconductor device (100).

[0028] The fixing lens (4) has a hemispherical or semi-spherical shape. The fixing lens (4) is optically attached to the semiconductor device (100). The fixing lens (4) irradiates the position to be analyzed in the semiconductor device (100) while concentrating the irradiation light L1. Accordingly, the material constituting the fixing lens (4) has the property of transmitting the irradiation light L1 irradiated to the semiconductor device (100). Likewise, the material constituting the fixing lens (4) has the property of transmitting the reflected light L2 emitted from the semiconductor device (100).

[0029] As a material having the property of transmitting light, the fixing lens (4) employs gallium arsenide (GaAs). Below, the light transmittance as an optical property of GaAs will be explained. FIG. 3 shows the light transmittance of GaAs. FIG. 3 also shows the light transmittance of gallium phosphide (GaP) and silicon (Si) as comparative examples. The horizontal axis represents the wavelength of light. The vertical axis represents the light transmittance. Graphs G3a to G3e represent the light transmittance of GaAs. Graph G3f represents the light transmittance of GaP. Graph G3g represents the light transmittance of Si.

[0030] Referring to graphs G3a to G3e, it can be seen that GaAs has the property of transmitting light with wavelengths longer than 850 nm. More specifically, in the relationship between light transmittance and wavelength of light, GaAs has a band in which light transmittance changes abruptly. The wavelength included in this band is also simply called the cutoff wavelength. For example, the cutoff wavelength of GaAs exists in the range of 880 nm to 980 nm. As the wavelength of light changes from short wavelength to long wavelength, the light transmittance increases abruptly from 0% to 80% or more. In addition, the relationship between light transmittance and wavelength of light also changes with the temperature of GaAs. Graphs G3a to G3e represent the light transmittance at temperatures of 0°C (Graph G3a), 50°C (Graph G3b), 100°C (Graph G3c), 150°C (Graph G3d), and 200°C (Graph G3e), respectively. That is, as the temperature of GaAs increases, the cutoff wavelength at which the light transmittance changes rapidly shifts toward the longer wavelength side.

[0031] For example, GaP is sometimes used as a material for a correction lens. Referring to graph G3f, it can be seen that GaP transmits light with wavelengths longer than 500 nm. For example, the cutoff wavelength of GaP is generally in the range of 500 nm to 600 nm. In other words, the cutoff wavelength of GaP is shorter than the cutoff wavelength of GaAs. To put it another way, the cutoff wavelength of GaAs is longer than the cutoff wavelength of GaP.

[0032] For example, Si is sometimes used as a material for a fixing lens. Referring to graph G3g, it can be seen that Si transmits light with wavelengths longer than 1000 nm. For example, the cutoff wavelength of Si with a thickness that is effectively usable as a fixing lens is generally in the range of 1000 nm to 1200 nm. In other words, the cutoff wavelength of a Si fixing lens is longer than the cutoff wavelength of GaAs. To put it another way, the cutoff wavelength of GaAs is shorter than the cutoff wavelength of Si.

[0033] The refractive index, another optical property of GaAs, is explained. Figure 4 shows the relationship between the refractive index and wavelength of GaAs, GaP, and Si. Graph G4a shows the refractive index of GaAs. Graph G4b shows the refractive index of GaP. Graph G4c shows the refractive index of Si. For example, according to Graph G4a, the refractive index of GaAs is approximately 3.40 to 4.40. For example, when the wavelength of the incident light is 1064 nm, the refractive index of GaAs is 3.47. Also, when the wavelength of the incident light is 940 nm, the refractive index of GaAs is 3.57.

[0034] The refractive index of GaAs is higher than that of GaP, for example, as shown in graph G4b. More specifically, in the entire range from 500 nm to 1500 nm shown on the horizontal axis of Fig. 4, the refractive index of GaAs is higher than that of GaP. For example, when the wavelength of the incident light is 780 nm, the refractive index of GaP is 3.21. Also, when the wavelength of the incident light is 670 nm, the refractive index of GaP is 3.27. Therefore, GaAs is more advantageous than GaP for improving resolution in that it has a higher refractive index.

[0035] Refer again to FIG. 1. Light (reflected light L2) reflected from the measurement point according to the illumination light L1 passes through the correction lens (4) and the objective lens (62) and is input to the polarizing beam splitter (61). At this time, by placing a short-pass filter in the optical path of the reflected light L2, infrared light generated from the semiconductor device (100) can be blocked. In addition, the light input to the polarizing beam splitter (61) passes through the λ / 4 plate twice. As a result, the polarization direction is tilted. The reflected light with the tilted polarization direction passes through the polarizing beam splitter (61). The reflected light L2 that passes through the polarizing beam splitter (61) is input to the light detection unit (5).

[0036] Thus, the optical system of the present embodiment is a confocal optical system. The optical system of the present embodiment can detect reflected light L2 from a limited focal range. A pinhole may be employed as an element constituting the confocal optical system. Additionally, a configuration utilizing the difference in refractive index between the core and clad of an optical fiber may be employed as an element constituting the confocal optical system.

[0037] The light detector (5) detects the light intensity of reflected light L2 reflected from the semiconductor device (100) according to the irradiated light L1. The light detector (5) converts the detected reflected light L2 into a detection signal, which is an analog signal. Then, the light detector (5) outputs the detection signal. The light detector (5) is an APD (Avalanche Photo Diode), PD (Photo Diode), PMT (Photo Multiplier Tube), SiPM (Silicon Photo Multipliers), etc.

[0038] The computer (7) has a data analysis unit (71) and a control unit (72). The data analysis unit (71) identifies the fault location of the semiconductor device (100). The control unit (72) controls the operation of various elements constituting the analysis device (1). Physically, the computer (7) is equipped with memory such as RAM and ROM, a processor (arithmetic circuit) such as a CPU, a communication interface, a storage unit such as a hard disk, etc. Examples of the computer (7) include a personal computer, a cloud server, a smart device (smartphone, tablet terminal, etc.). The computer (7) functions by executing a program stored in memory with the CPU of the computer system. Additionally, the data analysis unit (71) may include a processing unit according to the mode of analysis. For example, the data analysis unit (71) includes a heat source location identification unit (71a) and / or an operation frequency identification unit (71b). The heat source location identification unit (71a) performs processing to identify the location of the heat source. The operating frequency specification part (71b) performs a process to specify a position that operates at a predetermined frequency generated in the semiconductor device in response to the stimulation signal, based on the detection signal and the stimulation signal.

[0039] The control unit (72) includes, for example, a light control unit (72a) and a tester control unit (72b). The light control unit (72a) outputs a control signal to the light source (3) and the optical system (6). As such a control signal, for example, a signal to drive a light scanner to scan the irradiation light L1 can be used. The tester control unit (72b) outputs a control signal to control the stimulation signal output from the tester (2) to the semiconductor device (100).

[0040] <Effects of Action>

[0041] When the analysis device (1) specifies a fault location of a semiconductor device (100) to which a stimulus signal is given, it irradiates the semiconductor device (100) with an irradiation light L1 having a center wavelength of 880 nm or more and 980 nm or less through a fixed lens (4) formed of GaAs. The irradiation light L1 having a center wavelength of 880 nm or more and 980 nm or less sufficiently transmits through the semiconductor device (100) formed of silicon as the target of analysis. As a result, a reflected light L2 having a light intensity capable of specifying a fault location can be obtained. In addition, the refractive index of the fixed lens (4) formed of GaAs is higher than the refractive index of air and GaP. Therefore, the numerical aperture (NA) can be increased. As a result, it becomes possible to reduce the spot diameter of the irradiation light L1. Thus, the resolution can be improved.

[0042] When a stimulus signal is applied to a semiconductor device (100), heat is generated in pattern wiring or electrical functional parts that are not related to the form of the stimulus signal. And, at the point of failure, the degree of heat generation tends to increase. In analysis utilizing this heat generation, a combination of irradiation light L1 with a center wavelength of 880 nm or more and 980 nm or less and a fixing lens (4) formed by GaAs is particularly advantageous.

[0043] FIG. 5 shows the relationship between the wavelength and light transmittance of GaAs, similar to FIG. 3. FIG. 5 shows an enlarged range from 890 nm to 960 nm. Graphs G5a to G5f represent the light transmittance when the temperature of GaAs is 60°C (Graph G5a), 70°C (Graph G5b), 80°C (Graph G5c), 90°C (Graph G5d), 100°C (Graph G5e), and 110°C (Graph G5f), respectively. For example, the wavelength of the irradiation light L1 is assumed to be 920 nm. Additionally, it is assumed that the temperature of the fixing lens (4) changes between 60°C and 110°C. In this case, the light transmittance of the fixing lens (4) changes within the range of 5% to 70%. That is, the light transmittance of the fixing lens (4) changes significantly depending on the temperature of the fixing lens (4).

[0044] The irradiating light L1 and the reflected light L2 pass through the substrate (105) of the semiconductor device (100), as well as the repositioning lens (4). When the irradiating light L1 and the reflected light L2 pass through the repositioning lens (4), they are affected by a change in light transmittance caused by a change in the temperature of the repositioning lens (4). That is, the irradiating light L1 and the reflected light L2 are affected by the refractive index of the semiconductor device (100), whose temperature has changed due to heat generated from a heat source. In addition, the irradiating light L1 and the reflected light L2 are also affected by a change in the light transmittance of the repositioning lens (4). As a result, since the light intensity of the reflected light L2 changes significantly due to heat generation, the change in reflectance also increases. Then, even if the temperature difference at each measurement location is slight, it appears as a large change in reflectance. Therefore, it is possible to improve the resolution for temperature.

[0045] In short, since the center wavelength of the irradiation light L1 is included in the band of the cutoff frequency of GaAs, the resolution for temperature is improved. That is, the center frequency of the irradiation light L1 may be set to a value that obtains a large change in light transmittance in a temperature range including normal temperature and abnormal temperature. For example, if the normal temperature is 60°C and a temperature of 100°C or higher is judged to be abnormal, the center wavelength may be set to 920nm. This is because, according to this setting, when there is a heat source that heats the fixing lens (4) to 100°C or higher, a phenomenon in which the reflectance decreases significantly occurs.

[0046] In addition, by combining an irradiating light L1 with a central wavelength of 880 nm or more and 980 nm or less and a fixed lens (4) formed by GaAs, a reflected light L2 having sufficient light intensity to be provided for analysis can be obtained. For example, as shown in FIG. 2, the irradiating light L1 and the reflected light L2 attenuate according to the light transmittance of silicon when passing through the substrate (105). Graph G6 of FIG. 6 shows the relationship between the thickness of the substrate (105) formed by silicon and the light transmittance. In addition, graph G6 shows the light transmittance when the wavelength of the light is 940 nm. The horizontal axis represents the thickness of the substrate (105). The vertical axis represents the light transmittance. As shown in FIG. 6, as the thickness of the substrate (105) increases, the light transmittance decreases.

[0047] For example, when the thickness of the substrate (105) of the semiconductor device (100) is 80 μm, which is frequently used, the light transmittance is about 23%. Also, when the thickness of the substrate (105) of the semiconductor device (100) is 40 μm, it is about 48%. Based on these light transmittances, reflected light L2 having a light intensity that can be used for various analyses can be obtained. That is, in order to obtain reflected light L2 having sufficient light intensity, there is no need to thin the substrate (105) by polishing, etc. As a result, when performing a failure analysis of the semiconductor device (100), additional work such as polishing the substrate (105) becomes unnecessary. Therefore, the failure analysis can be performed simply. Also, if the substrate (105) is thin, handling of the semiconductor wafer becomes difficult. However, according to the present embodiment, even a semiconductor device (100) having a frequently used substrate thickness can be analyzed without polishing the substrate (105). Therefore, semiconductor wafers can be handled easily.

[0048] The foregoing has described one embodiment of the present invention. The present invention is not limited to the above embodiments.

[0049] For example, regarding the arrangement of the optical system (6) and the fixing lens (4) for the semiconductor device (100), the above embodiment illustrates a configuration in which an irradiating light L1 is provided to the substrate (105) side of the semiconductor device (100), and a reflected light L2 output from the substrate (105) side is detected. For example, an irradiating light L1 may be provided to the semiconductor device from the upper side (the side of the protective layer (101) in FIG. 2). In this case, the fixing lens (4) is installed on the protective layer (101) of the semiconductor device (100). Alternatively, the configuration may be such that an inspection light is irradiated from one side of the upper or lower side of the semiconductor device (100), and an electromagnetic wave is detected from the other side. In this case, the fixing lens (4) is installed on both the upper and lower sides of the semiconductor device. Explanation of the symbols

[0050] 1… Analysis device (Semiconductor fault analysis device) 2… Tester (Signal generation unit) 3… Light source 4… Fixing lens 5… Light detector 6… Optical system 7… Computer (Analysis Unit) 61… Polarizing Beam Splitter 62… Objective lens 71… Data analysis unit 71a… Heat source location specification part 71b… Operating frequency specification part 72… Control unit 72a… Optical control unit 72b… Tester control unit 100… Semiconductor device L1… Illuminating light L2… Reflected light

Claims

Claim 1 A semiconductor fault analysis device for analyzing a fault location included in a semiconductor device using a response to a stimulus signal, comprising: a signal generation unit for applying a stimulus signal to the semiconductor device; a light source for generating irradiation light irradiated onto the semiconductor device; a fixing lens disposed in the optical path of the irradiation light; a light detection unit for receiving reflected light generated by the reflection of the irradiation light from the semiconductor device and outputting a detection signal according to the reflected light; an optical system disposed between the light source and the fixing lens to emit the irradiation light onto the semiconductor device through the fixing lens, and disposed between the fixing lens and the light detection unit to emit the reflected light received through the fixing lens to the light detection unit; and an analysis unit for obtaining information regarding the fault location of the semiconductor device from the detection signal, wherein the light source emits the irradiation light having a central wavelength of 900 nm or more and 960 nm or less, the fixing lens is formed by gallium arsenide (GaAs), the central wavelength of the reflected light is the same as the central wavelength of the irradiation light, and the analysis unit comprises the fixing A semiconductor failure analysis device that obtains information regarding the failure point of the semiconductor device using the detection signal based on the light intensity according to the light transmittance of the fixed lens corresponding to the temperature of the lens. Claim 2 A semiconductor fault analysis device according to claim 1, wherein the analysis unit has a heat source location specifying unit, and the heat source location specifying unit specifies the location of a heat source occurring in the semiconductor device as a response to the stimulation signal based on the detection signal and the stimulation signal. Claim 3 A semiconductor fault analysis device according to claim 1, wherein the analysis unit has an operating frequency specifying unit, and the operating frequency specifying unit specifies a position that operates at a predetermined frequency generated in the semiconductor device as a response to the stimulation signal based on the detection signal and the stimulation signal. Claim 4 delete

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