Cavity-back microstrip dipole antenna

Abstract

A cavity-backed microstrip dipole antenna array may include a Printed Circuit Board (PCB); and a metal substrate. The PCB may include a dielectric substrate; a ground disposed on a second surface of the dielectric substrate—the ground includes a first open area, a second open area, and a third open area; radiators disposed on the first open area on the second surface of the dielectric substrate—first ends of the radiators are connected to a portion of the ground; a microstrip feeder disposed on the first surface of the dielectric substrate—part of the ground is electrically coupled to the microstrip feeder; and a conductive pattern disposed on the second surface of the dielectric substrate—the conductive pattern is electrically coupled to the second ends of the radiators.

Description

Technology Field

[0001] This specification relates to cavity-back microstrip antennas. Specific embodiments relate to cavity-back microstrip antenna arrays and electronic devices comprising the same. Background Technology

[0002] As the functions of electronic devices become more diverse, they can be implemented as video display devices such as multimedia players equipped with complex functions like playback of music or video files, games, and reception of broadcasts.

[0003] A video display device is a device that plays video content by receiving and playing video from various sources. Video display devices are implemented in various devices such as PCs (Personal Computers), smartphones, tablet PCs, laptops, and TVs. Applications for providing web content, such as web browsers, can be provided on video display devices such as smart TVs.

[0004] Meanwhile, with the rapid development of 5th / 6th Generation mobile communication, communication module design technology is evolving rapidly to support ultra-high-speed, high-capacity communication. Consequently, there is a significant increase in demand for the development of transceivers in the millimeter wave and terahertz bands.

[0005] Meanwhile, in addition to WiFi wireless interfaces, ultra-high-speed wireless interfaces using the terahertz band can be considered as interfaces for communication services between electronic devices. When using such ultra-high-speed wireless interfaces, the terahertz (THz) band can be used in addition to the millimeter wave (mmWave) band for high-speed data transmission between electronic devices.

[0006] The terahertz band refers to a frequency band between 100 GHz and 10 THz. Generally, as the frequency band increases, a wider communication bandwidth becomes available, making it suitable for the ultra-high-speed communication required by 6G. The terahertz band is being considered as a candidate frequency band for 6G communication, which aims for 1 Tbps (a speed of transmitting 1 trillion bits per second), up to 50 times faster than 5G (data transmission speed: up to 20 Gbps). However, as higher frequency bands become more frequent, there are problems such as greater path loss and shorter propagation ranges due to radio wave characteristics. Therefore, advanced beamforming technology is required to integrate numerous antennas within the communication system and transmit and receive radio waves in a specific direction.

[0007] Recent research on 6G THz band transceivers has been primarily conducted in the D-band (110 GHz to 170 GHz) frequency band. Accordingly, the design of a broadband antenna with a very wide operating bandwidth within the D-band is required. In addition, in 6G communication, free space path loss due to the distance between the transmitter and the receiver is very large. Therefore, the design of a high-gain antenna is required to compensate for high signal loss.

[0008] In 6G antenna design, patch antennas with high directivity may be used to increase radiation gain. However, patch antennas have a narrow operating frequency band and limited antenna gain. Therefore, a cavity antenna design capable of wideband operation and high gain in the 120 GHz band is required. In this regard, additional improvements in terms of operating bandwidth and radiation gain are necessary to satisfy the performance requirements of actual 6G communication. The problem to be solved

[0009] The present specification is intended to solve the aforementioned problems and other problems, and to provide an antenna module operating in the terahertz band for 6G communication and an electronic device equipped with the same.

[0010] The purpose of this specification is to design a terahertz band antenna structure having high radiation gain and wide bandwidth performance.

[0011] The purpose of this specification is to secure high radiation gain performance across the entire 6G frequency band.

[0012] The purpose of this specification is to improve antenna directivity and radiation gain by synthesizing the electric field distribution between antenna structures in phase. means of solving the problem

[0013] To achieve the above or other purposes, a cavity-backed microstrip dipole antenna array according to an embodiment may include a Printed Circuit Board (PCB); and a metal substrate. The PCB may include a dielectric substrate; a ground disposed on a second surface of the dielectric substrate—the ground includes a first open area, a second open area, and a third open area; radiators disposed on the first open area on the second surface of the dielectric substrate—the first end of the radiators is connected to a portion of the ground; a microstrip feeder disposed on the first surface of the dielectric substrate—the portion of the ground is electrically coupled to the microstrip feeder; and a conductive pattern disposed on the second surface of the dielectric substrate—the conductive pattern is electrically coupled to the second end of the radiators.

[0014] In an exemplary embodiment, the metal substrate may comprise: a third surface; a fourth surface opposite to the third surface—the fourth surface of the metal substrate faces the first surface of the dielectric substrate; a first cavity disposed on the fourth surface of the metal substrate—the first cavity is formed at a position overlapping with the radiators and the first portion of the conductive pattern; a second cavity disposed on the fourth surface of the metal substrate—the second cavity is formed at a position overlapping with the second portion of the conductive pattern; and a third cavity disposed on the fourth surface of the metal substrate—the third cavity is connected to the first cavity and the second cavity, and the third cavity is formed at a position overlapping with the intermediate portion between the first portion and the second portion of the conductive pattern.

[0015] In an example, the size, shape, and depth of the first cavity are the same as the size, shape, and depth of the second cavity, and the size and depth of the third cavity may be formed to be smaller than the size and depth of the second cavity.

[0016] In an exemplary embodiment, the PCB may comprise: a dielectric substrate; a ground disposed on a second surface of the dielectric substrate—the ground includes a first open area, a second open area and a third open area; radiators disposed on the first open area on the second surface of the dielectric substrate—the first end of the radiators is connected to a portion of the ground; a microstrip feeder disposed on the first surface of the dielectric substrate—the portion of the ground is electrically coupled to the microstrip feeder; and a conductive pattern disposed on the second surface of the dielectric substrate—the conductive pattern is electrically coupled to the second end of the radiators.

[0017] As an example, the interior of the first cavity, the interior of the second cavity, and the interior of the third cavity may be formed of air.

[0018] As an example of an embodiment, the ground may form an open area. Radiators may be provided in the open area.

[0019] As an example, the open area of ​​the ground may be formed to be smaller than the size of the first cavity.

[0020] In an exemplary embodiment, the radiators may be formed with a first radiator pattern and a second radiator pattern. A first portion of a slot may be formed between the first radiator pattern and the second radiator pattern. A second portion of the slot may be formed on the ground connected to the radiators. The first portion of the slot and the second portion of the slot may be connected. The gap of the second portion of the slot may be formed wider than the first portion of the slot.

[0021] As an example, the dimensions of the first cavity and the second cavity may be 1.18 x 0.74 mm in the horizontal and vertical directions, and the depth of the first cavity and the second cavity may be formed to be 0.35 mm.

[0022] As an example, the depth of the third cavity may be formed to be 0.13 mm.

[0023] In an exemplary embodiment, the first cavity and the second cavity may each be arranged in three units in the horizontal direction in a central area and in one side area and the other side area adjacent to the central area. The third cavity may be configured to connect the first cavity and the second cavity in the central area where the radiator is arranged. The size of the third cavity may be formed to be 0.12 x 0.5 mm in the horizontal and vertical directions.

[0024] As an example, the height of the metal substrate can be formed to be 1.0 mm.

[0025] As an example, the height of the dielectric substrate can be formed to be 80 µm.

[0026] A cavity-backed microstrip dipole antenna array according to another aspect of the present specification comprises: a dielectric substrate; a ground disposed on a first surface of the dielectric substrate, wherein the ground comprises a first open area, a second open area, and a third open area; a first radiator disposed on the first open area on the first surface of the dielectric substrate, wherein a first end of the first radiator is connected to a first portion of the ground; a second radiator disposed on the first open area on the first surface of the dielectric substrate, wherein a third end of the second radiator is connected to a second portion of the ground; a first gap disposed between the first portion of the ground and the second portion of the ground; a second gap disposed between the first radiator and the second radiator; a microstrip feeder disposed on a second surface of the dielectric substrate, wherein the microstrip feeder is electrically coupled to the first portion and the second portion of the ground; It may include a Printed Circuit Board (PCB) comprising a conductive pattern disposed on a first surface of the dielectric substrate, wherein the conductive pattern is electrically coupled to a second end of the first radiator and a fourth end of the second radiator.

[0027] In an exemplary embodiment, the antenna array may include a metal substrate. The metal substrate comprises: a third surface; a fourth surface opposite to the third surface—the fourth surface of the metal substrate faces the first surface of the dielectric substrate; a first cavity disposed on the fourth surface of the metal substrate—the first cavity is formed at a position overlapping the first and second radiators and the first portion of the conductive pattern; a second cavity disposed on the fourth surface of the metal substrate—the second cavity is formed at a position overlapping the second portion of the conductive pattern; and a third cavity disposed on a fourth surface of the metal substrate—the third cavity is connected to the first cavity and the second cavity, and the third cavity is formed at a position overlapping with an intermediate portion between the first and second portions of the conductive pattern—the size, shape, and depth of the first cavity are the same as the size, shape, and depth of the second cavity, and the size and depth of the third cavity may be formed smaller than the size and depth of the second cavity.

[0028] As an example, the interior of the first cavity, the interior of the second cavity, and the interior of the third cavity may be formed of air.

[0029] In an exemplary embodiment, the ground may form an open area, and the first and second radiators may be provided in the open area.

[0030] As an example, the open area of ​​the ground may be formed to be smaller than the size of the first cavity.

[0031] As an example, a first portion of the slot may be formed between the first radiator and the second radiator. A second portion of the slot may be formed on the ground connected to the radiators. The first portion of the slot and the second portion of the slot may be connected. The gap of the second portion of the slot may be formed wider than the first portion of the slot.

[0032] As an example, the dimensions of the first cavity and the second cavity may be 1.18 x 0.74 mm in the horizontal and vertical directions, and the depth of the first cavity and the second cavity may be formed to be 0.35 mm.

[0033] As an example, the depth of the third cavity may be formed to be 0.13 mm.

[0034] In an exemplary embodiment, the first cavity and the second cavity are each arranged in three units in a central area and a side area and a side area adjacent to the central area in the horizontal direction, and the third cavity is configured to connect the first cavity and the second cavity in the central area where the radiator is arranged, and the size of the third cavity may be formed to be 0.12 x 0.5 mm in the horizontal and vertical directions.

[0035] As an example, the height of the metal substrate can be formed to be 1.0 mm.

[0036] As an example, the height of the dielectric substrate can be formed to be 80 µm. Effects of the invention

[0037] The technical effects of such a cavity-back microstrip antenna array and an electronic device containing it are described as follows.

[0038] According to an embodiment, an antenna module operating in the terahertz band and an electronic device equipped with the same can be provided.

[0039] According to an embodiment, a terahertz band antenna structure with high radiation gain and wide bandwidth performance can be designed through a multi-cavity structure.

[0040] According to the embodiment, high radiation gain performance can be secured across the entire 6G frequency band through the optimal design of the shape, size, and depth of the multi-cavity structure.

[0041] According to an embodiment, the electric field distribution between antenna structures can be synthesized in phase through the optimal design of the shape, size, and depth of the multi-cavity structure, thereby improving antenna directivity and radiation gain.

[0042] Further scope of the applicability of this specification will become apparent from the following detailed description. However, since various changes and modifications within the spirit and scope of this specification are clearly understood by those skilled in the art, specific embodiments, such as the detailed description and preferred embodiments of this specification, should be understood as being given merely as examples. Brief explanation of the drawing

[0043] FIG. 1 shows an example of an electromagnetic spectrum including millimeter and terahertz bands according to the present specification. FIG. 2 illustrates an example of a THz communication application according to the present specification. FIG. 3 illustrates a communication system applicable to the present specification and devices that perform wireless communication through it. FIG. 4 shows the configuration of wireless devices that perform wireless communication according to the present specification. FIG. 5 shows an electronic device in which a plurality of antenna modules and a transceiver circuit module are arranged according to one embodiment. FIG. 6a shows a configuration in which an array antenna module is placed on a multilayer circuit board and an RFIC are connected in relation to terahertz band communication according to the present specification. FIG. 6b shows the combined structure of a multilayer substrate and a main substrate according to embodiments. FIGS. 7a to 7c show a microstrip dipole antenna with a single cavity back structure. Figures 8a and 8b show the reflection coefficient and gain characteristics of a microstrip dipole antenna with a single cavity back structure. FIGS. 9a to 9c show a microstrip dipole antenna having a plurality of cavities formed according to the present specification. FIGS. 10a and FIGS. 10b show an exploded perspective view and a front view of an antenna structure having a plurality of cavities formed in a dielectric substrate according to an embodiment of the present specification. Figure 11a compares the reflection coefficient and radiation gain of a single-cavity antenna and a multi-cavity antenna. FIGS. 11b and FIGS. 11c show the electric field distribution in the first and second lateral directions of a single-cavity antenna and a multi-cavity antenna. Figures 12a and 12b show the simulation results of the reflection coefficient characteristics and radiation gain characteristics of an antenna in a structure in which multiple cavities of Figure 10b are formed with equal lengths. Figure 13a shows the antenna radiation gain characteristics according to the width of the second cavity. FIG. 13b shows the electric field distribution of an antenna structure having a second cavity with different width values. FIG. 13c shows a 3D radiation pattern of an antenna structure having a second cavity having different width values ​​of FIG. 13b. FIG. 14a shows the antenna radiation gain characteristics according to the change in the spacing between the first and second cavities. FIG. 14b shows the electric field distribution of an antenna structure having first and second cavities having different spacing values. FIG. 14c shows a 3D radiation pattern of an antenna structure having first and second cavities having different spacing values ​​of FIG. 14b. Figure 15a shows the antenna radiation gain characteristics according to the change in length of the second sub-pattern. FIG. 15b shows the electric field distribution of an antenna structure having a second sub-pattern having different lengths. FIG. 15c shows a 3D radiation pattern of an antenna structure having a second sub-pattern having different lengths as in FIG. 15b. Figures 16a and 16b show a cavity-back microstrip dipole antenna array structure. FIG. 17a shows a structure in which an antenna module formed as an array antenna, comprising a first type antenna and a second type antenna, is placed in an electronic device. FIG. 17b is an enlarged view of a plurality of array antenna modules. FIG. 18 shows antenna modules combined with different coupling structures at specific locations of electronic devices according to embodiments. Specific details for implementing the invention

[0044] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the attached drawings. Identical or similar components regardless of drawing symbols will be assigned the same reference number, and redundant descriptions thereof will be omitted. The suffixes "module" and "part" used for components in the following description are assigned or used interchangeably solely for the ease of drafting the specification and do not inherently possess distinct meanings or roles. Furthermore, in describing the embodiments disclosed in this specification, if it is determined that a detailed description of related prior art could obscure the essence of the embodiments disclosed in this specification, such detailed description will be omitted. Additionally, the attached drawings are intended only to facilitate understanding of the embodiments disclosed in this specification; the technical concept disclosed in this specification is not limited by the attached drawings, and it should be understood that they include all modifications, equivalents, and substitutions that fall within the concept and technical scope of this specification.

[0045] Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another.

[0046] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0047] A singular expression includes a plural expression unless the context clearly indicates otherwise.

[0048] In this application, terms such as “comprising” or “having” are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0049] The following technologies can be used in various wireless access systems such as CDMA, FDMA, TDMA, OFDMA, and SC-FDMA. CDMA can be implemented using wireless technologies such as UTRA (Universal Terrestrial Radio Access) or CDMA2000. TDMA can be implemented using wireless technologies such as GSM (Global System for Mobile Communications), GPRS (General Packet Radio Service), and EDGE (Enhanced Data Rates for GSM Evolution). OFDMA can be implemented using wireless technologies such as IEEE 802.11 (Wi-Fi), IEEE 802.16 (WiMAX), IEEE 802-20, and E-UTRA (Evolved UTRA). UTRA is part of the UMTS (Universal Mobile Telecommunications System). 3GPP (3rd Generation Partnership Project) LTE (Long Term Evolution) is part of E-UMTS (Evolved UMTS) using E-UTRA, and LTE-A (Advanced) / LTE-A pro is an evolved version of 3GPP LTE. 3GPP NR (New Radio or New Radio Access Technology) is an evolved version of 3GPP LTE / LTE-A / LTE-A pro. 3GPP 6G may be an evolved version of 3GPP NR.

[0050] 6G System General

[0051] The 6G (wireless communication) system aims for (i) very high data rates per device, (ii) a very large number of connected devices, (iii) global connectivity, (iv) very low latency, (v) reduced energy consumption of battery-free IoT devices, (vi) ultra-reliable connectivity, and (vii) connected intelligence with machine learning capabilities. The vision of the 6G system can be seen in four aspects: intelligent connectivity, deep connectivity, holographic connectivity, and ubiquitous connectivity, and the 6G system can satisfy the requirements shown in Table 1 below. In other words, Table 1 is a table showing an example of the requirements for a 6G system.

[0052] Per device peak data rate 1 Tbps E2E latency 1 ms Maximum spectral efficiency 100 bps / Hz Mobility support Up to 1000km / h Satellite integration Fully AI Fully Autonomous vehicle Fully XR Fully Haptic Communication Fully

[0053] A 6G system can have key factors such as enhanced mobile broadband (eMBB), ultra-reliable low latency communications (URLLC), massive machine-type communication (mMTC), AI integrated communication, tactile internet, high throughput, high network capacity, high energy efficiency, low backhaul and access network congestion, and enhanced data security. Figure 1 is a diagram showing an example of a communication structure that can be provided by a 6G system.

[0054] 6G systems are expected to have 50 times higher simultaneous wireless connectivity than 5G wireless communication systems. URLLC, a key feature of 5G, will become an even more dominant technology in 6G communication by providing end-to-end latency of less than 1ms. Unlike the frequently used area spectrum efficiency, 6G systems will have much better volume spectrum efficiency.

[0055] THz (Terahertz) communication

[0056] Data transmission rates can be increased by expanding bandwidth. This can be achieved by using sub-THz communication with wide bandwidth and applying advanced large-scale MIMO technology. THz waves, also known as sub-millimeter radiation, generally refer to a frequency band between 0.1 THz and 10 THz with corresponding wavelengths ranging from 0.03 mm to 3 mm. The 100 GHz–300 GHz band range (Sub-THz band) is considered the primary portion of the THz band for cellular communication. Adding the Sub-THz band to the mmWave band increases 6G cellular communication capacity. Among the defined THz bands, the 300 GHz–3 THz band is located in the far-infrared (IR) frequency band. Although the 300 GHz–3 THz band is part of the broadband, it lies at the boundary of the broadband and immediately following the RF band. Therefore, the 300 GHz–3 THz band exhibits similarities to RF.

[0057] In this regard, FIG. 1 shows an example of an electromagnetic spectrum including millimeter and terahertz bands according to the present specification.

[0058] Referring to FIG. 1, THz waves are located between the RF (Radio Frequency) / millimeter (mm) and infrared bands, and (i) they penetrate non-metallic / non-polar materials well compared to visible light / infrared, and have high directivity and beam focusing capabilities due to their shorter wavelength compared to RF / millimeter waves. In addition, since the photon energy of THz waves is only a few meV, they have the characteristic of being harmless to the human body. The frequency bands expected to be used for THz wireless communication may be the D-band (110 GHz–170 GHz) or H-band (220 GHz–325 GHz) bands, which have low propagation loss due to molecular absorption in the air. Standardization discussions regarding THz wireless communication are being held primarily by the IEEE 802.15 THz working group in addition to 3GPP, and standard documents issued by the IEEE 802.15 Task Group (TG3d, TG3e) may elaborate on or supplement the contents described in this specification.

[0059] THz wireless communication can be applied to wireless cognition, sensing, imaging, wireless communication, and THz navigation. Key characteristics of THz communication include (i) widely available bandwidth to support very high data transmission rates, and (ii) high path loss occurring at high frequencies (highly directional antennas are indispensable). The narrow beam width generated by highly directional antennas reduces interference. The small wavelength of THz signals allows a much larger number of antenna elements to be integrated into devices and BSs operating in this band. This enables the use of advanced adaptive array technologies to overcome range limitations.

[0060] FIG. 2 illustrates an example of a THz communication application according to the present specification. As illustrated in FIG. 2, THz wireless communication scenarios can be classified into macro networks, micro networks, and nanoscale networks. In a macro network, THz wireless communication can be applied to vehicle-to-vehicle connections and backhaul / fronthaul connections. In a micro network, THz wireless communication can be applied to fixed point-to-point or multi-point connections, such as indoor small cells and wireless connections in data centers, and near-field communication, such as kiosk downloading.

[0061] Table 2 below shows an example of a technology that can be used in THz waves.

[0062] Transceivers Device Available immature, UTC-PD, RTD and SBD Modulation and Coding Low order modulation techniques (OOK, QPSK), ㅣLDPC, Reed Soloman, Hamming, Poalr, Turbo Antenna Omni and Directional, Phased array with low number of antenna elements Bandwidth 69 GHz (or 23 GHz) at 300GHz Channel models Partially Data rate 100Gbps Outdoor deployment No Free space loss High Coverage Low Radio Measurements 300 GHz indoor Device size Few micrometers

[0063] Optical wireless technology

[0064] OWC technology has been planned for 6G communication in addition to RF-based communication for all possible device-to-access networks. These networks connect to network-to-backhaul / fronthaul network connections. Although OWC technology has already been in use since 4G communication systems, it will be used more widely to meet the demands of 6G communication systems. OWC technologies such as light fidelity, visible light communication, optical camera communication, and broadband-based FSO communication are already well-known technologies. Communication based on optical radio technology can provide very high data rates, low latency, and secure communication. LiDAR can also be utilized for ultra-high resolution 3D mapping in 6G communication based on broadband.

[0065] FSO Backhaul Network

[0066] The transmitter and receiver characteristics of an FSO system are similar to those of a fiber optic network. Therefore, data transmission in an FSO system is similar to that of a fiber optic system. Consequently, FSO can be a good technology for providing backhaul connectivity in 6G systems in conjunction with fiber optic networks. Using FSO enables very long-distance communication over distances of more than 10,000 km. FSO supports high-capacity backhaul connectivity for remote and non-remote areas such as the ocean, space, underwater, and isolated islands. FSO also supports cellular backhaul connectivity.

[0067] Massive MIMO technology

[0068] One of the key technologies for improving spectrum efficiency is the application of MIMO technology. As MIMO technology improves, spectrum efficiency also improves. Therefore, large-scale MIMO technology will be important in 6G systems. Since MIMO technology utilizes multiple paths, multiplexing technology and beam generation and operation technology suitable for the THz band must also be given important consideration to enable data signals to be transmitted through one or more paths.

[0069] blockchain

[0070] Blockchain will become a critical technology for managing massive amounts of data in future communication systems. As a form of distributed ledger technology, a distributed ledger is a database distributed across numerous nodes or computing devices. Each node replicates and stores an identical copy of the ledger. Blockchain is managed via a peer-to-peer (P2P) network and can exist without being managed by a centralized authority or server. Data in a blockchain is collected together and organized into blocks. These blocks are linked together and protected using encryption. Blockchain inherently complements large-scale IoT perfectly through enhanced interoperability, security, privacy, stability, and scalability. Therefore, blockchain technology provides various capabilities such as inter-device interoperability, large-scale data traceability, autonomous interaction with other IoT systems, and the large-scale connectivity stability of 6G communication systems.

[0071] 3D Networking

[0072] 6G systems integrate terrestrial and air networks to support vertically scalable user communications. 3D BS will be provided via low-orbit satellites and UAVs. By adding new dimensions in terms of altitude and associated degrees of freedom, 3D connectivity differs significantly from existing 2D networks.

[0073] Quantum communication

[0074] Unsupervised reinforcement learning of networks is promising in the context of 6G networks. Supervised learning methods cannot label the vast amount of data generated in 6G. Unsupervised learning does not require labeling. Therefore, this technology can be used to autonomously construct representations of complex networks. Combining reinforcement learning and unsupervised learning enables the operation of networks in a truly autonomous manner.

[0075] unmanned aerial vehicles

[0076] Unmanned Aerial Vehicles (UAVs) or drones will become a critical element in 6G wireless communication. In most cases, high-speed data wireless connectivity is provided using UAV technology. BS entities are installed on UAVs to provide cellular connectivity. UAVs possess specific capabilities not found in fixed BS infrastructure, such as easy deployment, robust line-of-sight links, and controlled degrees of freedom for mobility. During emergencies, such as natural disasters, the deployment of ground communication infrastructure is not economically feasible, and sometimes services cannot be provided in volatile environments. UAVs can easily handle these situations. UAVs will become a new paradigm in the field of wireless communication. This technology facilitates the three fundamental requirements of wireless networks: eMBB, URLLC, and mMTC. UAVs can also support various purposes, such as enhancing network connectivity, fire detection, disaster emergency services, security and surveillance, pollution monitoring, parking monitoring, and accident monitoring. Therefore, UAV technology is recognized as one of the most critical technologies for 6G communication.

[0077] Cell-free Communication

[0078] The tight integration of multiple frequencies and heterogeneous communication technologies is critical to 6G systems. Consequently, users can seamlessly move from one network to another without the need for any manual configuration on their devices. The best network among available communication technologies is automatically selected. This will break the limitations of the cellular concept in wireless communication. Currently, user movement from one cell to another in high-density networks causes excessive handovers, leading to handover failures, delays, data loss, and the "ping-pong" effect. 6G cell-free communication will overcome all of these issues and provide better QoS. Cell-free communication will be achieved through multi-connectivity and multi-tier hybrid technologies, as well as different heterogeneous radios on devices.

[0079] Wireless Information and Energy Transmission Integration

[0080] WIET uses the same fields and waves as wireless communication systems. In particular, sensors and smartphones will be charged using wireless power transmission during communication. WIET is a promising technology for extending the lifespan of wireless battery charging systems. Therefore, devices without batteries will be supported in 6G communication.

[0081] Integration of Sensing and Communication

[0082] Autonomous wireless networks are capable of continuously detecting dynamically changing environmental conditions and exchanging information between different nodes. In 6G, sensing will be tightly integrated with communication to support autonomous systems.

[0083] Integration of access backhaul networks

[0084] In 6G, the density of access networks will be enormous. Each access network will be connected via backhaul connections such as fiber optics and FSO networks. To cope with a very large number of access networks, there will be tight integration between access and backhaul networks.

[0085] Holographic beam forming

[0086] Beamforming is a signal processing procedure that adjusts an antenna array to transmit wireless signals in a specific direction. It is a subset of smart antennas or advanced antenna systems. Beamforming technology offers several advantages, such as a high call-to-noise ratio, interference prevention and rejection, and high network efficiency. Holographic Beamforming (HBF) is a new beamforming method that differs significantly from MIMO systems because it utilizes software-defined antennas. HBF will be a highly effective approach for the efficient and flexible transmission and reception of signals in multi-antenna communication devices in 6G.

[0087] Big data analysis

[0088] Big data analysis is a complex process for analyzing various large-scale data sets or big data. This process ensures perfect data management by uncovering information such as hidden data, unknown correlations, and customer preferences. Big data is collected from various sources, such as video, social networks, images, and sensors. This technology is widely used to process vast amounts of data in 6G systems.

[0089] Large Intelligent Surface (LIS)

[0090] THz band signals exhibit strong directivity, which can lead to numerous dead zones caused by obstacles. Consequently, LIS technology becomes important as it allows for the expansion of communication coverage, enhanced communication stability, and the provision of additional value-added services by installing LIS near these dead zones. An LIS is an artificial surface made of electromagnetic materials capable of altering the propagation of incoming and outgoing radio waves. While LIS can be viewed as an extension of massive MIMO, it differs from massive MIMO in its array structure and operational mechanism. Furthermore, LIS offers the advantage of low power consumption because it operates as a reconfigurable reflector with passive elements—that is, by passively reflecting signals without using an active RF chain. Additionally, since each passive reflector in an LIS must independently adjust the phase shift of the incident signal, this can be advantageous for wireless communication channels. By appropriately adjusting the phase shift through the LIS controller, the reflected signal can be collected at the target receiver to boost the received signal power.

[0091] The 6G communication technology described above may be applied in combination with the methods proposed in this specification, or may be supplemented to specify or clarify the technical features of the methods proposed in this specification. Meanwhile, the communication service proposed in this specification may be applied in combination with communication services based on 3G, 4G, and / or 5G communication technology, in addition to the 6G communication technology described above.

[0092] FIG. 3 illustrates a communication system applicable to the present specification and devices that perform wireless communication through it. Referring to FIG. 3, the communication system (1) applicable to the present specification includes a wireless device, a base station, and a network. Here, a wireless device refers to a device that performs communication using wireless access technology (e.g., 5G NR (New RAT), LTE (Long Term Evolution)) and may be referred to as a communication / wireless / 5G device. Although not limited thereto, a wireless device may include a robot (100a), a vehicle (100b-1, 100b-2), an XR (eXtended Reality) device (100c), a hand-held device (100d), a home appliance (100e), an IoT (Internet of Thing) device (100f), and an AI device / server (400). For example, a vehicle may include a vehicle equipped with a wireless communication function, an autonomous vehicle, a vehicle capable of performing inter-vehicle communication, etc. Here, the vehicle may include an Unmanned Aerial Vehicle (UAV) (e.g., a drone). The XR device includes an Augmented Reality (AR) / Virtual Reality (VR) / Mixed Reality (MR) device and may be implemented in the form of a Head-Mounted Device (HMD), a Head-Up Display (HUD) equipped in a vehicle, a television, a smartphone, a computer, a wearable device, a home appliance, digital signage, a vehicle, a robot, etc. The portable device may include a smartphone, a smartpad, a wearable device (e.g., a smartwatch, smart glasses), a computer (e.g., a laptop, etc.). The home appliance may include a TV, a refrigerator, a washing machine, etc. The IoT device may include a sensor, a smart meter, etc. For example, a base station and a network may be implemented as a wireless device, and a specific wireless device (200a) may operate as a base station / network node to other wireless devices.

[0093] Wireless devices (100a to 100f) can be connected to a network (300) through a base station (200). Artificial Intelligence (AI) technology may be applied to the wireless devices (100a to 100f), and the wireless devices (100a to 100f) can be connected to an AI server (400) through the network (300). The network (300) can be configured using a 3G network, a 4G (e.g., LTE) network, or a 5G (e.g., NR) network. The wireless devices (100a to 100f) may communicate with each other through the base station (200) / network (300), but they may also communicate directly (e.g., sidelink communication) without going through the base station / network. For example, vehicles (100b-1, 100b-2) can communicate directly (e.g., V2V (Vehicle to Vehicle) / V2X (Vehicle to everything) communication). Also, IoT devices (e.g., sensors) can communicate directly with other IoT devices (e.g., sensors) or other wireless devices (100a to 100f).

[0094] Wireless communication / connection (150a, 150b) can be established between wireless devices (100a~100f) / base station (200) and base station (200) / wireless devices (100a~100f). Here, the wireless communication / connection can be established through uplink / downlink communication (150a) and sidelink communication (150b) (or D2D communication) via various wireless access technologies (e.g., 5G NR). Through the wireless communication / connection (150a, 150b), wireless devices and base stations / wireless devices can transmit / receive wireless signals to / from each other. For example, the wireless communication / connection (150a, 150b) can transmit / receive signals via various physical channels based on the entire / partial process of FIG. A1. To this end, based on the various proposals of this specification, at least some of the following may be performed: a process for setting various configuration information for transmitting / receiving wireless signals, a process for various signal processing (e.g., channel encoding / decoding, modulation / demodulation, resource mapping / demapping, etc.), a resource allocation process, etc.

[0095] FIG. 4 illustrates the configuration of wireless devices performing wireless communication according to the present specification. Referring to FIG. 4, a first wireless device (100) and a second wireless device (200) can transmit and receive wireless signals through various wireless access technologies (e.g., LTE, NR). Here, {the first wireless device (100), the second wireless device (200)} may correspond to {wireless device (100x), base station (200)} and / or {wireless device (100x), wireless device (100x)} of FIG. 19.

[0096] The first wireless device (100) includes one or more processors (102) and one or more memories (104), and may additionally include one or more transceivers (106) and / or one or more antennas (108). The processor (102) controls the memory (104) and / or transceivers (106) and may be configured to implement the functions, procedures and / or methods described or proposed above. For example, the processor (102) may process information within the memory (104) to generate a first information / signal and then transmit a wireless signal containing the first information / signal through the transceiver (106). Additionally, the processor (102) may receive a wireless signal containing a second information / signal through the transceiver (106) and then store information obtained from the signal processing of the second information / signal in the memory (104). The memory (104) may be connected to the processor (102) and may store various information related to the operation of the processor (102). For example, the memory (104) may store software code containing instructions for performing some or all of the processes controlled by the processor (102) or for performing the procedures and / or methods described or proposed above. Here, the processor (102) and the memory (104) may be part of a communication modem / circuit / chip designed to implement wireless communication technology (e.g., LTE, NR). The transceiver (106) may be connected to the processor (102) and may transmit and / or receive wireless signals through one or more antennas (108). The transceiver (106) may include a transmitter and / or receiver. The transceiver (106) may be interchangeably used with an RF (Radio Frequency) unit. In this specification, the wireless device may refer to a communication modem / circuit / chip.

[0097] The second wireless device (200) includes one or more processors (202) and one or more memories (204), and may additionally include one or more transceivers (206) and / or one or more antennas (208). The processor (202) controls the memory (204) and / or transceivers (206) and may be configured to implement the functions, procedures and / or methods described or proposed above. For example, the processor (202) may process information within the memory (204) to generate a third information / signal and then transmit a wireless signal containing the third information / signal through the transceiver (206). Additionally, the processor (202) may receive a wireless signal containing a fourth information / signal through the transceiver (206) and then store information obtained from the signal processing of the fourth information / signal in the memory (204). The memory (204) may be connected to the processor (202) and may store various information related to the operation of the processor (202). For example, the memory (204) may store software code containing instructions for performing some or all of the processes controlled by the processor (202) or for performing the procedures and / or methods described / suggested above. Here, the processor (202) and the memory (204) may be part of a communication modem / circuit / chip designed to implement wireless communication technology (e.g., LTE, NR). The transceiver (206) may be connected to the processor (202) and may transmit and / or receive wireless signals through one or more antennas (208). The transceiver (206) may include a transmitter and / or receiver. The transceiver (206) may be interchangeable with an RF unit. In this specification, a wireless device may refer to a communication modem / circuit / chip.

[0098] Hereinafter, hardware elements of the wireless device (100, 200) will be described in more detail. Although not limited thereto, one or more protocol layers may be implemented by one or more processors (102, 202). For example, one or more processors (102, 202) may implement one or more layers (e.g., functional layers such as PHY, MAC, RLC, PDCP, RRC, SDAP). One or more processors (102, 202) may generate one or more Protocol Data Units (PDUs) and / or Service Data Units (SDUs) according to the functions, procedures, proposals and / or methods disclosed in this document. One or more processors (102, 202) may generate messages, control information, data, or information according to the functions, procedures, proposals and / or methods disclosed in this document. One or more processors (102, 202) may generate a signal (e.g., baseband signal) containing a PDU, SDU, message, control information, data, or information according to the functions, procedures, proposals, and / or methods disclosed in this document and provide it to one or more transceivers (106, 206). One or more processors (102, 202) may receive a signal (e.g., baseband signal) from one or more transceivers (106, 206) and may obtain a PDU, SDU, message, control information, data, or information according to the functions, procedures, proposals, and / or methods disclosed in this document.

[0099] One or more processors (102, 202) may be referred to as a controller, microcontroller, microprocessor, or microcomputer. One or more processors (102, 202) may be implemented by hardware, firmware, software, or a combination thereof. For example, one or more Application Specific Integrated Circuits (ASICs), one or more Digital Signal Processors (DSPs), one or more Digital Signal Processing Devices (DSPDs), one or more Programmable Logic Devices (PLDs), or one or more Field Programmable Gate Arrays (FPGAs) may be included in one or more processors (102, 202). The functions, procedures, proposals, and / or methods disclosed in this document may be implemented using firmware or software, and the firmware or software may be implemented to include modules, procedures, functions, etc. Firmware or software configured to perform the functions, procedures, proposals, and / or methods disclosed in this document may be included in one or more processors (102, 202) or stored in one or more memories (104, 204) and driven by one or more processors (102, 202). The functions, procedures, proposals, and / or methods disclosed in this document may be implemented using firmware or software in the form of code, instructions, and / or sets of instructions.

[0100] One or more memories (104, 204) may be connected to one or more processors (102, 202) and may store various forms of data, signals, messages, information, programs, code, instructions, and / or commands. One or more memories (104, 204) may be composed of ROM, RAM, EPROM, flash memory, hard drive, registers, cache memory, computer read storage media, and / or combinations thereof. One or more memories (104, 204) may be located inside and / or outside of one or more processors (102, 202). Additionally, one or more memories (104, 204) may be connected to one or more processors (102, 202) through various technologies such as wired or wireless connections.

[0101] One or more transceivers (106, 206) may transmit user data, control information, wireless signals / channels, etc., as mentioned in the methods and / or operation flowcharts, etc., of this document to one or more other devices. One or more transceivers (106, 206) may receive user data, control information, wireless signals / channels, etc., as mentioned in the functions, procedures, proposals, methods and / or operation flowcharts, etc., disclosed in this document from one or more other devices. For example, one or more transceivers (106, 206) may be connected to one or more processors (102, 202) and may transmit and receive wireless signals. For example, one or more processors (102, 202) may control one or more transceivers (106, 206) to transmit user data, control information, or wireless signals to one or more other devices. Additionally, one or more processors (102, 202) may control one or more transceivers (106, 206) to receive user data, control information, or wireless signals from one or more other devices. Additionally, one or more transceivers (106, 206) may be connected to one or more antennas (108, 208), and one or more transceivers (106, 206) may be configured to transmit and receive user data, control information, wireless signals / channels, etc., as mentioned in the functions, procedures, proposals, methods, and / or operation flowcharts disclosed in this document through one or more antennas (108, 208). In this document, one or more antennas may be multiple physical antennas or multiple logical antennas (e.g., antenna ports). One or more transceivers (106, 206) can convert the received wireless signal / channel, etc. from an RF band signal to a baseband signal in order to process the received user data, control information, wireless signal / channel, etc. using one or more processors (102, 202).One or more transceivers (106, 206) can convert user data, control information, wireless signals / channels, etc. processed using one or more processors (102, 202) from baseband signals to RF band signals. To this end, one or more transceivers (106, 206) may include (analog) oscillators and / or filters.

[0102] In this regard, 6G wireless communication services are not limited to electronic devices such as mobile terminals or video display devices. 6G wireless communication services can be applied to fully autonomous vehicles, artificial intelligence (AI) robots, and electronic devices supporting augmented / virtual reality (AR / VR)-based metaverses.

[0103] Hereinafter, an electronic device having an array antenna capable of operating in the millimeter wave or terahertz band according to the present specification will be described. In this regard, FIG. 5 shows an electronic device having a plurality of antenna modules and a transceiver circuit module arranged thereon according to one embodiment. Referring to FIG. 5, the electronic device having a plurality of antenna modules and a plurality of transceiver circuit modules arranged thereon may be an image display device, but is not limited thereto. Accordingly, the electronic device having a plurality of antenna modules and a plurality of transceiver circuit modules arranged thereon may include any electronic device or vehicle, etc., that supports communication services in the millimeter wave or terahertz band.

[0104] Referring to FIG. 5, the electronic device (1000) includes a plurality of antenna modules (ANT 1 to ANT4) and a plurality of transceiver circuit modules (1210a to 1210d) with respect to the antenna modules (ANT 1 to ANT4). In this regard, the plurality of transceiver circuit modules (1210a to 1210d) may correspond to the aforementioned transceiver circuit (1250). Alternatively, the plurality of transceiver circuit modules (1210a to 1210d) may be part of the transceiver circuit (1250) or part of a front-end module disposed between the antenna module and the transceiver circuit (1250).

[0105] Multiple antenna modules (ANT 1 to ANT 4) may be configured as array antennas in which multiple antenna elements are arranged. The number of elements in the antenna modules (ANT 1 to ANT 4) is not limited to 2, 3, 4, etc. as illustrated. For example, the number of elements in the antenna modules (ANT 1 to ANT 4) can be expanded to 2, 4, 8, 16, etc. Additionally, the elements of the antenna modules (ANT 1 to ANT 4) may be selected to be the same number or different numbers. Multiple antenna modules (ANT 1 to ANT 4) may be placed in different areas of the display or on the bottom or side of the electronic device. Multiple antenna modules (ANT 1 to ANT 4) may be placed on the top, left, bottom, and right of the display, but are not limited to such a placement structure. As another example, multiple antenna modules (ANT 1 to ANT 4) may be placed on the top left, top right, bottom left, and bottom right of the display.

[0106] The antenna modules (ANT 1 to ANT4) may be configured to transmit and receive signals in a specific direction in any frequency band. For example, the antenna modules (ANT 1 to ANT4) may operate in any one of the 28 GHz band, 39 GHz band, 64 GHz band, or a band of 100 GHz or higher.

[0107] An electronic device may maintain a connection state with different entities or perform data transmission or reception operations for this purpose through two or more of the antenna modules (ANT 1 to ANT 4). In this regard, an electronic device corresponding to a display device may transmit or receive data with a first entity through a first antenna module (ANT 1). Additionally, the electronic device may transmit or receive data with a second entity through a second antenna module (ANT 2). For example, the electronic device may transmit or receive data with a mobile terminal (UE) through the first antenna module (ANT 1). The electronic device may transmit or receive data with a control device, such as a set-top box or an AP (Access Point), through the second antenna module (ANT 2).

[0108] Data can be transmitted or received with other entities through other antenna modules, such as the third antenna module (ANT3) and the fourth antenna module (ANT4). As another example, dual connection or multiple input / output (MIMO) can be performed through at least one of the previously connected first and second entities via the third antenna module (ANT3) and the fourth antenna module (ANT4).

[0109] Mobile terminals (UE1, UE2) may be placed in the front area of ​​the electronic device and configured to communicate with a first antenna module (ANT1). Meanwhile, a set-top box (STB) or AP may be placed in the lower area of ​​the electronic device and configured to communicate with a second antenna module (ANT2), but is not limited thereto. As another example, the second antenna module (ANT2) may be equipped with both a first antenna that radiates to the lower area and a second antenna that radiates to the front area. Accordingly, the second antenna module (ANT2) may communicate with the set-top box (STB) or AP through the first antenna and communicate with either of the mobile terminals (UE1, UE2) through the second antenna.

[0110] Meanwhile, either of the mobile terminals (UE1, UE2) may be configured to perform multiple input / output (MIMO) with an electronic device. For example, UE1 may be configured to perform MIMO while performing beamforming with an electronic device. As described above, the electronic device corresponding to the video display device may perform high-speed communication with another electronic device or a set-top box via a WiFi wireless interface. For example, the electronic device may perform high-speed communication in a band of 100 GHz or higher via a 6G wireless interface with another electronic device or a set-top box.

[0111] Meanwhile, the transceiver circuit modules (1210a to 1210d) can be operated to process a transmission signal and a reception signal in an RF frequency band. Here, the RF frequency band may be any frequency band of any one of the 28 GHz band, 39 GHz band, 64 GHz band, or a band of 100 GHz or higher, as described above. Meanwhile, the transceiver circuit modules (1210a to 1210d) may be referred to as RF SUB-MODULEs (1210a to 1210d). At this time, the number of RF SUB-MODULEs (1210a to 1210d) is not limited to four, but can be changed to any number of two or more depending on the application. A baseband processor (1400) may be configured to control the transceiver circuit modules (1210a to 1210d).

[0112] FIG. 6a illustrates a configuration in which an array antenna module is placed on a multilayer circuit board and an RFIC are connected in relation to terahertz band communication according to the present specification. Referring to FIG. 6a(a), the antenna module is for mmWave band or THz band communication and is configured as an RFIC-PCB-antenna integrated type. In this regard, the array antenna module (1100-1) may be formed integrally with the multilayer PCB as shown in FIG. 6a(a). The array antenna module (1100-1) may be placed on one side area of ​​the multilayer PCB. In this regard, a first beam (B1) can be formed to a side area of ​​the multilayer PCB using the array antenna module (1100-1) placed on one side area of ​​the multilayer PCB. Referring to FIG. 6a(b), the array antenna module (1100-2) may be placed on the multilayer PCB. A second beam (B2) can be formed in the front area of ​​a multilayer substrate using an array antenna module (1100-2).

[0113] The first array antenna (1100-1) of FIG. 6a(a) can be placed in a side area of ​​a multilayer substrate, and the second array antenna (1100-2) of FIG. 6a(b) can be placed in a side area of ​​a multilayer substrate. Accordingly, a first beam (B1) can be generated through the first array antenna (1100-1), and a second beam (B2) can be generated through the second array antenna (1100-2).

[0114] The first array antenna (1100-1) and the second array antenna (1100-2) may be configured to have the same polarization. Alternatively, the first array antenna (1100-1) and the second array antenna (1100-2) may be configured to have orthogonal polarization. In this regard, the first array antenna (1100-1) may operate as a vertically polarized antenna and may also operate as a horizontally polarized antenna.

[0115] Meanwhile, the multilayer substrate in which the array antenna is placed internally may be formed integrally with the main substrate or configured to be modularly combined with the main substrate by a connector. In this regard, FIG. 6b shows a combined structure of a multilayer substrate and a main substrate according to embodiments. Referring to FIG. 6b(a), a structure in which an RFIC (1250) and a modem (1400) are formed integrally on a multilayer substrate (1010) is shown. The modem (1400) may be referred to as a baseband processor (1400). Accordingly, the multilayer substrate (1010) is formed integrally with the main substrate. This integrated structure can be applied to a structure in which only one array antenna module is placed in an electronic device.

[0116] On the other hand, the multilayer board (1010) and the main board (10120) may be configured to be modularly combined by a connector. Referring to FIG. 6b(b), in this regard, the multilayer board (1010) may be configured to interface with the main board (1020) through a connector. In this case, an RFIC (1250) may be placed on the multilayer board (1010), and a modem (1400) may be placed on the main board (1020). Accordingly, the multilayer board (1010) may be formed as a separate board from the main board (1020) and configured to be combined through a connector.

[0117] This modular structure can be applied to a structure in which multiple array antenna modules are placed in an electronic device. Referring to FIG. 6b(b), a multilayer substrate (1010) and a second multilayer substrate (1020) can be configured to interface with a main substrate (1020) through a connector connection. A modem (1400) placed on the main substrate (1020) is configured to be electrically coupled with RFICs (1250, 1250b) placed on the multilayer substrate (1010) and the second multilayer substrate (1020).

[0118] Hereinafter, a cavity-backed microstrip dipole antenna array for performing 6G wireless communication and an electronic device equipped with the same will be described. Specifically, a cavity-backed microstrip dipole antenna structure according to the present specification will be described. In this regard, FIGS. 7a to 7c show a microstrip dipole antenna with a single cavity-backed structure. FIG. 7a is an enlarged perspective view of a portion of the microstrip dipole antenna with a single cavity-backed structure. FIG. 7b is a front view of the microstrip dipole antenna with a single cavity-backed structure. FIG. 7c shows a side view of the microstrip dipole antenna with a single cavity-backed structure and a structure in which a cavity is formed in a substrate.

[0119] Referring to FIGS. 7a through 7c, the dipole antenna structure may be configured to include a PCB (1100) and a metallic substrate (1200). The metallic substrate (1200) may be placed in a lower region of the PCB (1100). The entire structure of the metallic substrate (1200) may be a metallic structure, but is not limited thereto and may include a hollow metallic structure or a metallic structure with only the surface plated to a certain thickness.

[0120] The PCB (1100) and the metal substrate (1200) may be referred to as the first substrate and the second substrate, respectively. The PCB (1100) may be formed from a silicon substrate, and the surface of the metal substrate (1200) may be formed from a metal material. The dielectric constant of the PCB (1100) implemented with a silicon substrate is approximately 11.7, and the thickness of the PCB (1100) may be approximately 80 μm. The thickness of the metal substrate (1200) may be approximately 1 mm.

[0121] The PCB (1100) may be configured to include a dielectric substrate (1010), a ground (1110g), and a radiator (1110). The PCB (1100) may be configured to further include a microstrip feeder (1110f) and a conductive pattern (1120). A metal layer may be formed on a first surface (S1) which is the back side and a second surface (S2) which is the front side of the dielectric substrate (1010). A radiator (1110) and a ground (1110g) may be placed on the first surface (S1) of the dielectric substrate (1010). A microstrip feeder (1110f) may be formed on the second surface (S2) of the dielectric substrate (1010). The microstrip feeder (1110f) is implemented to have a characteristic impedance of 50 ohms and forms a feed structure using coupling with a slot (1100s) on the first surface (S1).

[0122] The radiator (1110) may be formed with a first radiator pattern (1111a) and a second radiator pattern (1111b). The length of the radiator (1110) along one axis may be formed to be approximately 0.38 mm. The first radiator pattern (1111a) and the second radiator pattern (1111b) may be formed apart by a predetermined distance, for example, approximately 34 µm. The ground (1110g) may include an open area (OA). The radiator (1110) may be placed within the open area (OA). The length of the open area (OA) along one axis may be formed to be approximately 1.18 mm. An end of the open area (OA) may be extended in the other axis direction to be coupled by a microstrip feeder (1110f). The length of the open area (OA) along the other axis may be formed to be approximately 0.74 mm.

[0123] A cavity (1210) may be formed in the metal substrate (1200) corresponding to the area where the radiator (1110) is formed. The depth of the cavity (1210) may be formed to be approximately 0.35 mm. The thickness of the metal substrate (1200) placed on the lower part of the silicon substrate PCB (1100) may be formed to be approximately 1 mm, and the thickness from the bottom of the cavity (1210) to the bottom of the metal substrate (1200) may be formed to be approximately 0.65 mm. A cavity (1210) may be formed corresponding to the area where the open area (OA) of the ground (1110g) is formed. The cavity (1210) may be formed with a length of 1.18 x 0.74 mm in one axis and the other axis direction. By forming a cavity (1210) in the metal substrate (1200), it is possible to improve antenna directivity and antenna gain.

[0124] The performance of such a single-cavity microstrip dipole antenna is described as follows. Figures 8a and 8b show the reflection coefficient and gain characteristics of a single-cavity back microstrip dipole antenna. Referring to Figure 8a, the reflection coefficient bandwidth of the single-cavity back microstrip dipole antenna can be formed from 150 to 169.7 GHz, with a reference value of -10 dB or less. Referring to Figure 8b, the radiation gain in the 6G frequency band of the D-band has a value of approximately 4.4 to 6.4 dBi. At the center frequency of 160 GHz, the radiation gain has a value of approximately 6.0 dBi, and the maximum radiation gain has a value of 6.4 dBi at 165 GHz. The 6G frequency band of the D-band can be set to approximately 151 to 175 GHz. Meanwhile, a single cavity back microstrip dipole antenna can have a radiation pattern formed to have directivity in a direction perpendicular to the horizontal plane in which the dipole antenna is placed.

[0125] Meanwhile, the microstrip dipole antenna with a cavity back structure according to the present specification may be formed with a plurality of cavity back structures. In this regard, FIGS. 9a to 9c illustrate a microstrip dipole antenna with a plurality of cavities formed according to the present specification. FIG. 9a shows a perspective view and an enlarged view of a portion of the microstrip dipole antenna structure. FIG. 9b shows a front view of the microstrip dipole antenna structure of FIG. 9a. FIG. 9c shows a side view of the microstrip dipole antenna structure with a plurality of cavities formed in the antenna structure of FIG. 9a.

[0126] With reference to FIGS. 9a through 9c, a dipole antenna structure of a cavity-backed microstrip dipole antenna array is described. The dipole antenna structure may be configured to include a PCB (1100) and a metallic substrate (1200). The metallic substrate (1200) may be placed in a lower region of the PCB (1100). The PCB (1100) and the metallic substrate (1200) may be referred to as a first substrate and a second substrate, respectively.

[0127] The PCB (1100) may be configured to include a dielectric substrate (1010), a ground (1110g), and radiators (1110). The PCB (1100) may be configured to further include a microstrip feeder (1110f) and a conductive pattern (1120).

[0128] A dielectric substrate (1010) may have a first surface (S1) and a second surface (S2). The second surface (S2) may be opposite to the first surface (S1). The first surface (S1) and the second surface (S2) may each form the rear surface and the front surface of the dielectric substrate (1010). A ground (1110g) may be placed on the second surface (S2) of the dielectric substrate (1010). The ground (1110g) may include a first open area (OA1), a second open area (OA2), and a third open area (OA3). The first open area (OA1) may be placed on one side and the second open area (OA2) and the third open area (OA3) may be placed on the other side.

[0129] Radiators (1110) may be placed in a first open area (OA1) in the center of the second surface (S2) of the dielectric substrate (1010). A first end of the radiators (1110) may be connected to a portion of the ground (1110g). A microstrip feeder (1110f) may be placed on the first surface (S1) of the dielectric substrate (1010). A portion of the ground (1110g) may be electrically coupled to the microstrip feeder (1110f). The microstrip feeder (1110f) placed on the first surface (S1) of the dielectric substrate (1010) may be electrically coupled to a slot (1100s) on the first surface (S1) of the dielectric substrate (1010) to be coupled and fed to the radiators (1110). A conductive pattern (1120) may be disposed on a second surface (S2) of a dielectric substrate (1010). The conductive pattern (1120) may be electrically coupled to a second end of the radiators (1110). Although the radiators (1110) and the conductive pattern (1120) are not directly connected, they are spaced apart by a predetermined distance so that the signal of the radiators (1110) can be coupled to the conductive pattern (1120). The radiators (1110) and the conductive pattern (1120) are each connected to a ground (1110g), so that although the radiators (1110) and the conductive pattern (1120) are not directly connected, they are connected through the ground (1110g).

[0130] The metal substrate (1200) may include a third surface (S3) and a fourth surface (S4). The fourth surface (S4) may be on the opposite side from the third surface (S3). The third surface (S3) and the fourth surface (S4) may each form the back and front surfaces of the metal substrate (1200). The fourth surface (S4) of the metal substrate (1200) may be formed to face the first surface (S1) of the dielectric substrate (1010). The height of the metal substrate (1200) may be formed to be higher than the height of the dielectric substrate (1010). Since the height of the metal substrate (1200) is formed to be higher, a plurality of cavities may be formed in the metal substrate (1200). For example, the height of the metal substrate (1200) may be formed to be 1.0 mm. Meanwhile, the height of the dielectric substrate (1010) may be formed to be 80 µm.

[0131] A plurality of cavities may be disposed in a metal substrate (1200) with radiators and in the surrounding area of ​​the radiators. In this regard, FIGS. 10a and 10b show an exploded perspective view and a front view of an antenna structure in which a plurality of cavities are formed in a dielectric substrate according to an embodiment of the present specification. FIG. 10a is an exploded perspective view of an antenna structure in which a plurality of cavities are formed in a dielectric substrate according to an embodiment of the present specification and an enlarged view of a third cavity. FIG. 10b is a front view showing a plurality of cavities formed in a dielectric substrate of the antenna structure of FIG. 10a.

[0132] Referring to FIGS. 9a through 10b, the metal substrate (1200) may be configured to include a first cavity (1210), a second cavity (1220), and a third cavity (1230). The first cavity (1210) may be disposed on a fourth surface (S4) of the metal substrate (1200). The first cavity (1210) may be formed at a position overlapping with the radiators (1110) and a first portion of the conductive pattern (1200). The second cavity (1220) may be disposed on the fourth surface (S4) of the metal substrate (1200). The second cavity (1220) may be formed at a position overlapping with a second portion of the conductive pattern (1200). The third cavity (1230) may be disposed on the fourth surface (S4) of the metal substrate (1200). The third cavity (1230) may be formed in a position overlapping with the intermediate portion between the first portion (1121) and the second portion (1122) of the conduction pattern (1120).

[0133] A third cavity (1230) may be formed to be connected to the first cavity (1210) and the second cavity (1220). The third cavity (1230) may be formed between the first cavity (1210) and the second cavity (1220). The size, shape, and depth of the first cavity (1210) may be formed to be the same as the size, shape, and depth of the second cavity (1220).

[0134] The interior of the first cavity (1210), the interior of the second cavity (1220), and the interior of the third cavity (1230) can be formed with air. Accordingly, the radiation efficiency of the signal radiated from the radiators (1110) can be improved by preventing propagation loss caused by a surface wave formed in the dielectric region (1010) where the radiators (1110) are placed. The surface wave formed in the dielectric region (1010) can be radiated to the upper part of the radiators (1110) through the interior of the first cavity (1210), the interior of the second cavity (1220), and the interior of the third cavity (1230).

[0135] At least one of the interiors of the first cavity (1210), the second cavity (1220), and the third cavity (1230) may be formed as a dielectric structure. In this regard, the dielectric constant of the dielectric structure associated with the cavity may be set to a value lower than the dielectric constant of the metal substrate (1200). As the dielectric constant of the dielectric structure associated with the cavity is set to be lower than the dielectric constant of the metal substrate (1200), the radiation efficiency can be improved.

[0136] As described above, the ground (1110g) can form an open area (OA1). Radiators (1110) may be provided in the open area (OA1). A first cavity (1211) and a second cavity (1221) may be formed corresponding to the open area (OA1). Accordingly, the radiation efficiency of the radiators (1110) provided in the open area (OA1) may be improved. A second open area (OA2) and a third open area (OA3) may be formed adjacent to the open area (OA1) on one side and the other side of the open area (OA1). Accordingly, a first cavity (1212, 1213) and a second cavity (1222, 1223) may be formed corresponding to the second open area (OA2) and the third open area (OA3). Accordingly, surface waves from one side and the other side of the radiators (1110) in the second and third open areas (OA2, OA3) are radiated upward, thereby improving radiation efficiency.

[0137] The open area (OA) of the ground (1110g) may be formed smaller than the size of the first cavity (1211). The second and third open areas (OA2, OA3) of the ground (1110g) may also be formed smaller than the size of the first cavity (1212, 1213). The size of the first cavity (1211 to 1213) may be formed larger than the size of the first to third open areas (OA1 to OA3) of the ground (1110g). Surface waves formed in the first to third open areas (OA1 to OA3) of the ground (1110g) may be received inside the first cavity (1211 to 1213) and propagate to the upper region of the radiators (1110). Accordingly, the surface wave component formed in the boundary region of the first to third open region (OA1 to OA3) of the ground (1110g) can be propagated to the upper region of the radiators (1110), thereby improving radiation efficiency.

[0138] The first cavity (1210) and the second cavity (1220) may be arranged in a uniaxial direction corresponding to the first to third open areas (OA1 to OA3) formed in the ground (1110g) of the PCB (1000) placed on the top. The first cavity (1210) and the second cavity (1220) may each be arranged in three units in the horizontal direction in the center area, one side area adjacent to the center area, and the other side area. The first cavity (1210) may include a plurality of cavities (1211 to 1213) arranged spaced apart in a uniaxial direction. The second cavity (1220) may include a plurality of cavities (1221 to 1223) arranged spaced apart in a uniaxial direction.

[0139] Meanwhile, the third cavity (1230) may be formed as a single structure only in the central region. The third cavity (1230) may be formed to be connected to the first cavity (1211) and the second cavity (1221) placed in the central region. The third cavity (1230) may be configured to connect the first cavity (1211) and the second cavity (1221) in the central region where the radiator (1110) is placed. A second radiator (1112) corresponding to a coupling pattern may be placed in the region where the third cavity (1230) is formed. Accordingly, the third cavity (1230) where the coupling pattern is placed may be referred to as a coupling slit. The size and depth of the third cavity (1230) may be formed to be smaller than the size and depth of the first cavity (1210) or the second cavity (1220). The size of the third cavity (1230) may be formed to be 0.12 x 0.5 mm in the horizontal and vertical directions.

[0140] The first cavity (1210) and the second cavity (1220) may be formed with a predetermined length (L) in one axial direction. The first cavity (1210) may be formed with a first width (W1) in the other axial direction. The second cavity (1220) may be formed with a second width (W2) in the other axial direction. The first width (W1) of the first cavity (1210) and the second width (W2) of the second cavity (1220) may be set to the same value, but are not limited thereto. The antenna performance may change depending on the change in the length (L) of the first cavity (1210) and the second cavity (1220).

[0141] Hereinafter, the characteristics of the single-cavity antenna structure of FIGS. 7a to 7c and the multi-cavity antenna structure of FIGS. 9a to 9c will be described. In this regard, FIG. 11a compares the reflection coefficient and radiation gain of the single-cavity antenna structure and the multi-cavity antenna structure. Referring to FIG. 8a and FIG. 11a(a), (i) the reflection coefficient of the single-cavity antenna structure exhibits dual resonance with respect to the center frequency and operates as a radiator within the first bandwidth (BW1) with respect to -10dB. Dual resonance characteristics occur due to the first resonance mode of the dipole antenna and the second resonance mode of the single-cavity structure.

[0142] Referring to FIG. 11a(b), (ii) the reflection coefficient of the antenna with a single cavity structure is multi-resonant with respect to the center frequency and operates as a radiator within a second bandwidth (BW2) that is wider than the first bandwidth (BW1) with respect to -10 dB. Multi-resonant characteristics are generated by the first resonant mode of the dipole antenna and the second to fourth resonant modes of the first to third cavities.

[0143] In this regard, the cavity (1210) of FIG. 7c(b) may be formed with lengths a and b in the direction of one axis and the other axis, and a depth d. When the cavity (1210) is formed with lengths a, b, and d in the direction of one axis and the other axis, the resonance frequency of the resonance mode formed by the cavity (1210) can be determined as in Equation 1.

[0144]

[0145] Here, m, n, and l are wave numbers determined by the resonance mode, and once the values ​​of a, b, and d are determined, the resonance frequency can be derived by Equation 1. In addition, c is the speed of light, and εr and μr represent relative permittivity and relative permeability, respectively. Dual resonance characteristics can be realized by setting the resonance frequency of a single cavity to be adjacent to the resonance frequency of a dipole antenna. Multiple resonance characteristics can be realized by setting the second to fourth resonance frequencies of a multi-cavity to be adjacent to the resonance frequency of a dipole antenna.

[0146] Referring to FIG. 8b and FIG. 11a(b), (i) the radiation gain of the antenna with a single cavity structure has a maximum value of 6.4 dBi. On the other hand, (ii) the radiation gain of the antenna with a multi-cavity structure has a maximum value of 10.9 dBi, which is about 4.5 dB higher than the radiation gain of the antenna with a single cavity structure. The directivity of the dipole antenna is improved according to the multi-cavity structure, and the radiation efficiency is increased.

[0147] Meanwhile, to compare a single cavity structure and a multi-cavity structure, the electric field distribution of an antenna module adopting a single cavity structure and an antenna module adopting a multi-cavity structure is compared. In this regard, FIGS. 11b and FIGS. 11c show the electric field distribution in the first and second lateral directions of an antenna with a single cavity structure and an antenna with a multi-cavity structure.

[0148] Referring to FIG. 7a, FIG. 11b(a), and FIG. 11b(b), the electric field distribution in the first lateral direction (SD1) and the second lateral direction (SD2) of a single cavity antenna module is shown. A cavity-back dipole antenna using a single cavity structure is a structure in which the first resonant mode of the dipole antenna and the second resonant mode of the cavity combine to radiate. A signal is radiated in the first direction (D1) perpendicular to the dipole antenna, but a signal is also radiated in the second direction (D2) and the third direction (D3), which are different from the first direction. Consequently, the electric field is still scattered over a wide area, and a directional beam pattern cannot be formed. Therefore, it is necessary to further improve the radiation gain of the antenna in the single cavity structure.

[0149] Referring to FIGS. 9a, 11c(a), and 11c(b), the electric field distribution in the first lateral direction (SD1) and the second lateral direction (SD2) of a multi-cavity antenna module is shown. The electric field can be coupled and fed to cavity structures arranged adjacent to a single cavity structure to form a resonant mode and can be utilized as an additional radiated source. The electric field formed by the added cavity structure and the electric field formed by the dipole antenna are combined, causing the beam to be focused in the first vertical direction (D1). If the electric fields between the multiple cavities are not properly combined, it is difficult to obtain a gain increase effect.

[0150] Meanwhile, FIGS. 12a and 12b show the simulation results of the reflection coefficient characteristics and radiation gain characteristics of an antenna in a structure in which multiple cavities of FIG. 10b are formed with equal lengths.

[0151] Referring to FIGS. 10b and FIGS. 12a, as the length (L) of the first cavity (1210) and the second cavity (1220) increases, the operating band of the antenna shifts to a low frequency band. As the length (L) of the first cavity (1210) and the second cavity (1220) decreases, the operating band of the antenna shifts to a high frequency band. Referring to FIGS. 10b and FIGS. 12b, when the lengths (L) of the first cavity (1210) and the second cavity (1220) are 1.18 mm and 1.23 mm, respectively, the antenna has a reflection coefficient characteristic of -10 dB or less at 151 to 175 GHz. In this regard, the total frequency band for 6G communication is 151 to 175 GHz. Referring to FIG. 10b and FIG. 12b, when the lengths (L) of the first cavity (1210) and the second cavity (1220) are 1.18 mm and 1.23 mm, respectively, there are high antenna gain characteristics of about 8 dB or more in the 151 to 175 GHz range. When the lengths (L) of the first cavity (1210) and the second cavity (1220) are 1.03 mm to 1.13 mm, it can be seen that the antenna gain in the 151 to 160 GHz band is somewhat reduced compared to when they are 1.18 mm and 1.23 mm.

[0152] The dimensions of the first cavity (1210) and the second cavity (1220) may be formed to be 1.18 x 0.74 mm in the horizontal and vertical directions. The depth of the first cavity (1210) and the second cavity (1220) may be formed to be 0.35 mm. The depth of the third cavity (1230) may be formed to be 0.13 mm. The width of either the first cavity (1210) or the second cavity (1220) may be formed to be 0.74 mm, and the width of the other may be formed to a different value.

[0153] In this regard, FIG. 13a shows the antenna radiation gain characteristics according to the width of the second cavity. FIG. 13b shows the electric field distribution of an antenna structure having a second cavity with different width values. FIG. 13c shows the 3D radiation pattern of an antenna structure having a second cavity with different width values ​​of FIG. 13b.

[0154] Referring to FIG. 10b and FIG. 13a, when the width (W2) of the second cavity (1220) is set to 0.54 mm, the antenna structure has an antenna gain value of 8 dB or less across the entire frequency band. When the width (W2) of the second cavity (1220) is set to 0.64 mm, the antenna structure has an antenna gain value of 8 dB or less across the frequency band of 155 GHz or lower. When the width (W2) of the second cavity (1220) is set to 0.74 mm, the antenna structure has an antenna gain value of 8 dB or more. When the width (W2) of the second cavity (1220) is set to 0.84 mm, the antenna structure has an antenna gain value of 8 dB or more. However, when the width (W2) is 0.84 mm, the antenna gain value in the 161 GHz band decreases somewhat, resulting in frequency selective characteristics. Accordingly, the width (W2) of the second cavity (1220) can also be set to 0.84 mm, which is the same as the width (W1) of the first cavity (1210).

[0155] Referring to FIG. 10b and FIG. 13b(a), when the width (W2) of the second cavity (1220) is set to 0.54 mm, the first peak region (PR1) and the second peak region (PR2) of the electric field distribution of the antenna structure are formed in different directions, the first direction and the second direction. If the width (W2) of the second cavity (1220) is 0.54 mm, the electric field generated by the second cavity (1220) is not combined in phase with the electric field generated by the dipole antenna, and thus the radiation gain performance is degraded.

[0156] FIG. 13c(a) shows a 3D radiation pattern of an antenna structure when the width (W2) of the second cavity (1220) is 0.54 mm. Referring to FIG. 10b, FIG. 13b(a), and FIG. 13c(a), when the width (W2) of the second cavity (1220) is 0.54 mm, the radiation pattern component by the second cavity (1220) and the radiation pattern component by the dipole antenna are not combined but separated. Therefore, when the width (W2) of the second cavity (1220) is 0.54 mm, the phase of the electric field component of the cavity and the dipole antenna or the phase of the radiation pattern component are not combined in phase. Accordingly, when the width (W2) of the second cavity (1220) is 0.54 mm, a degradation of antenna performance occurs.

[0157] Referring to FIG. 10b and FIG. 13b(b), when the width (W2) of the second cavity (1220) is set to 0.74 mm, the peak region (PR) of the electric field distribution of the antenna structure is formed in the same direction. When the width (W2) of the second cavity (1220) is set to 0.74 mm, the peak region (PR) of the electric field distribution of the antenna structure is formed in a direction perpendicular to the antenna structure. Therefore, when the width (W2) of the second cavity (1220) is 0.74 mm, the electric field generated by the second cavity (1220) can be combined in phase with the electric field generated by the dipole antenna. As the electric field generated by the second cavity (1220) is combined in phase with the electric field generated by the dipole antenna, the radiation gain performance is improved.

[0158] FIG. 13c(b) shows a 3D radiation pattern of an antenna structure when the width (W2) of the second cavity (1220) is 0.74 mm. Referring to FIG. 10b, FIG. 13b(a), and FIG. 13c(b), when the width (W2) of the second cavity (1220) is 0.74 mm, the radiation pattern component by the second cavity (1220) and the radiation pattern component by the dipole antenna are combined in the vertical direction of the antenna structure. The peak value of the radiation pattern in FIG. 11c(b) when the width (W2) of the second cavity (1220) is 0.74 mm has a larger value than the peak value of the radiation pattern in FIG. 11c(a) when the width (W2) of the second cavity (1220) is 0.54 mm. Accordingly, if the width (W2) of the second cavity (1220) is 0.74 mm, the phase of the electric field component or the phase of the radiation pattern component of the cavity and the dipole antenna are combined in phase in the vertical direction, thereby improving directivity. Accordingly, if the width (W2) of the second cavity (1220) is 0.74 mm, the radiation pattern peak value increases, thereby improving antenna performance. Additionally, if the width (W2) of the second cavity (1220) is 0.74 mm, the radiation pattern is formed in a left-right symmetrical shape with respect to the vertical direction, thereby improving antenna performance.

[0159] Antenna performance can be improved by adjusting the spacing between the first cavity (1210) and the second cavity (1220). As the spacing between the first cavity (1210) and the second cavity (1220) changes, the width (W3) of the third cavity (1230) connected to the first cavity (1210) and the second cavity (1220) changes. In this regard, FIG. 14a shows the antenna radiation gain characteristics according to the change in spacing between the first and second cavities. FIG. 14b shows the electric field distribution of an antenna structure having first and second cavities having different spacing values. FIG. 14c shows the 3D radiation pattern of an antenna structure having first and second cavities having different spacing values ​​of FIG. 14b. Hereinafter, the distance between the first cavity (1210) and the second cavity (1220) is expressed as the width (W3) of the third cavity (1230).

[0160] Referring to FIG. 10b and FIG. 14a, when the width (W3) of the third cavity (1230) is set to 1.5 mm, the antenna structure has a slightly reduced antenna gain value in some frequency bands below 160 GHz. When the width (W3) of the third cavity (1230) is set to 1.0 mm, the antenna structure has a slightly reduced antenna gain value in some frequency bands above 160 GHz. When the width (W3) of the third cavity (1230) is set to 0.5 mm, the antenna structure has a high antenna gain value of 9 dB or more across the entire frequency band.

[0161] Referring to FIG. 10b and FIG. 14b(a), when the width (W3) of the third cavity (1230) is set to 1.5 mm, the first peak region (PR1) and the second peak region (PR2) of the electric field distribution of the antenna structure are formed in different directions, the first direction and the second direction. If the width (W3) of the third cavity (1230) is 1.5 mm, the electric field generated by the first cavity (1210) and the second cavity (1220) is not combined in phase with the electric field generated by the dipole antenna, and thus the radiation gain performance is degraded.

[0162] FIG. 14c(a) shows the 3D radiation pattern of the antenna structure when the width (W3) of the third cavity (1230) is 1.5 mm. Referring to FIG. 10b, FIG. 14b(a), and FIG. 14c(a), when the width (W3) of the third cavity (1230) is 0.54 mm, the radiation pattern component by the first cavity (1210) and the second cavity (1220) and the radiation pattern component by the dipole antenna are separated and not combined. Therefore, when the width (W3) of the third cavity (1230) is 1.5 mm, the phase of the electric field component of the cavity and the dipole antenna or the phase of the radiation pattern component are not combined in phase. Accordingly, when the width (W3) of the third cavity (1230) is 1.5 mm, a degradation of antenna performance occurs.

[0163] Referring to FIG. 10b and FIG. 14b(b), when the width (W3) of the third cavity (1230) is set to 0.5 mm, the peak region (PR) of the electric field distribution of the antenna structure is formed in the same direction. When the width (W3) of the third cavity (1230) is set to 0.5 mm, the peak region (PR) of the electric field distribution of the antenna structure is formed in a direction perpendicular to the antenna structure. Therefore, when the width (W3) of the third cavity (1230) is 0.5 mm, the electric field generated by the first cavity (1210) and the second cavity (1220) can be combined in phase with the electric field generated by the dipole antenna. The electric field generated by the first cavity (1210) and the second cavity (1220) is combined in phase with the electric field generated by the dipole antenna, thereby improving the radiation gain performance.

[0164] FIG. 14c(b) shows a 3D radiation pattern of an antenna structure when the width (W3) of the third cavity (1230) is 0.5 mm. Referring to FIG. 10b, FIG. 14b(a), and FIG. 14c(b), when the width (W3) of the third cavity (1230) is 0.5 mm, the radiation pattern component from the first cavity (1210) and the second cavity (1220) and the radiation pattern component from the dipole antenna are combined in the vertical direction of the antenna structure. The peak value of the radiation pattern in FIG. 12c(b) when the width (W3) of the third cavity (1230) is 0.5 mm has a larger value than the peak value of the radiation pattern in FIG. 12c(a) when the width (W3) of the third cavity (1230) is 1.5 mm. Accordingly, if the width (W3) of the third cavity (1230) is 0.5 mm, the phase of the electric field component or the phase of the radiation pattern component of the cavity and the dipole antenna are combined in phase in the vertical direction, thereby improving directivity. Accordingly, if the width (W3) of the third cavity (1230) is 0.5 mm, the radiation pattern peak value increases, thereby improving antenna performance. Additionally, if the width (W3) of the third cavity (1230) is 0.5 mm, the radiation pattern is formed in a left-right symmetrical shape with respect to the vertical direction, thereby improving antenna performance.

[0165] Referring to FIGS. 9a through 14c, the dimensions of the first cavity (1210) and the second cavity (1220) may be formed to be 1.18 x 0.74 mm in the horizontal and vertical directions. The length (L) of the first cavity (1210) and the second cavity (1220) may be formed to be 1.18 mm. The width (W1) of the first cavity (1210) and the width (W2) of the second cavity (1220) may be formed to be 0.74 mm. The depth of the first cavity (1210) and the second cavity (1220) may be formed to be 0.35 mm. The width (W3) of the third cavity (1230) may be formed to be 0.5 mm.

[0166] The ground (1110g) may be placed on the second surface (S2) of the dielectric substrate (1010). The ground (1110g) may include a first open area (OA1), a second open area (OA2), and a third open area (OA3). The first open area (OA1) may be placed on one side and the second open area (OA2) and the third open area (OA3) may be placed on the other side.

[0167] Radiators (1110) may be placed in a first open area (OA1) in the center of the second surface (S2) of the dielectric substrate (1010). A first end of the radiators (1110) may be connected to a portion of the ground (1110g). A microstrip feeder (1110f) may be placed on the first surface (S1) of the dielectric substrate (1010). A portion of the ground (1110g) may be electrically coupled to the microstrip feeder (1110f). The microstrip feeder (1110f) placed on the first surface (S1) of the dielectric substrate (1010) may be electrically coupled to a slot (1100s) on the first surface (S1) of the dielectric substrate (1010) to be coupled and fed to the radiators (1110). A conductive pattern (1120) may be disposed on a second surface (S2) of a dielectric substrate (1010). The conductive pattern (1120) may be electrically coupled to a second end of the radiators (1110).

[0168] Meanwhile, in the cavity-backed microstrip dipole antenna structure according to the present specification, radiators (1110) may be formed in a plurality of radiator patterns. Referring to FIGS. 9a through 10b, the radiators (1110) may be formed as a first radiator (1111) and a second radiator (1112). The second radiator (1112) may be formed as a structure separated from the first radiator (1111). One end of the second radiator (1112) may be formed spaced apart from the end of the first radiator (1111). The other end of the second radiator (1112) may be disposed in a second cavity (1221) in a central region. The other end of the second radiator (1112) may be formed with a predetermined length (CL) in one axial direction. The second radiator (1112) may include a first sub-pattern (1112a) and a second sub-pattern (1112b) corresponding to a coupling pattern. The second sub-pattern (1112b) may be formed with a predetermined length (CL) in one axial direction.

[0169] The slot (1110s) may be configured to include a first part (1111s) and a second part (1112s). The first part (1111s) of the slot may be formed between the first radiator pattern (1111a) and the second radiator pattern (1111b). The second part (1112s) of the slot may be formed on the ground (1110g) connected to the radiators (1100). The first part (1111s) of the slot and the second part (1112s) of the slot may be formed to be connected. The gap (SG2) of the second part (1112s) of the slot may be formed wider than the gap (SG1) of the first part (1111s) of the slot.

[0170] The antenna performance according to the change in length (CL) of the second sub-pattern (1112b) corresponding to the coupling pattern is described. In this regard, FIG. 15a shows the antenna radiation gain characteristics according to the change in length of the second sub-pattern. FIG. 15b shows the electric field distribution of an antenna structure having second sub-patterns having different lengths. FIG. 15c shows the 3D radiation pattern of an antenna structure having second sub-patterns having different lengths of FIG. 15b.

[0171] Referring to FIG. 10b and FIG. 15a, when the length (CL) of the second sub-pattern (1112b) is set to 0.5mm, 0.7mm, or 0.9mm, the antenna gain value is reduced to 8dB or less in the frequency band below 155GHz. When the length (CL) of the second sub-pattern (1112b) is set to 1.1mm, the antenna gain value is reduced to 8dB or less in some frequency bands centered around 160GHz. When the length (CL) of the second sub-pattern (1112b) is set to 0.3mm, the antenna structure has a high antenna gain value of approximately 9dB or more across the entire frequency band. When the length (CL) of the second sub-pattern (1112b) is set to 0.3mm, the antenna structure has a high antenna gain value of approximately 10dB or more in the frequency band above 160GHz.

[0172] Accordingly, as the length (CL) of the second sub-pattern (1112b) changes, the antenna radiation performance changes. To provide in-phase feeding to the second cavity (121) in the center region, it is necessary to optimize the design of the second sub-pattern (1112b) corresponding to the coupling pattern. Depending on the length (CL) of the second sub-pattern (1112b), the signal applied to the second cavity (121) and the cavity resonance mode change. Accordingly, if the signal applied to the second cavity (121) and the signal applied to the first cavity (111) are not combined in phase, the antenna gain performance may be degraded.

[0173] Referring to FIG. 10b and FIG. 15(a), when the length (CL) of the second sub-pattern (1112b) is set to 1.1 mm, the first peak region (PR1) and the second peak region (PR2) of the electric field distribution of the antenna structure are formed in different directions, the first direction and the second direction. When the length (CL) of the second sub-pattern (1112b) is 1.1 mm, the electric field generated by the first cavity (1210) and the second cavity (1220) is not combined in phase with the electric field generated by the dipole antenna, and thus the radiation gain performance is degraded.

[0174] FIG. 15c(a) shows the 3D radiation pattern of the antenna structure when the length (CL) of the second sub-pattern (1112b) is 1.1 mm. Referring to FIG. 10b, FIG. 15b(a), and FIG. 15c(a), when the length (CL) of the second sub-pattern (1112b) is 1.1 mm, the radiation pattern component by the first cavity (1210) and the second cavity (1220) and the radiation pattern component by the dipole antenna are not combined but separated. Therefore, when the length (CL) of the second sub-pattern (1112b) is 1.1 mm, the phase of the electric field component of the cavity and the dipole antenna or the phase of the radiation pattern component are not combined in phase. Accordingly, when the length (CL) of the second sub-pattern (1112b) is 1.1 mm, a degradation of antenna performance occurs.

[0175] Referring to FIG. 10b and FIG. 15b(b), when the length (CL) of the second sub-pattern (1112b) is set to 0.3mm, the peak region (PR) of the electric field distribution of the antenna structure is formed in the same direction. When the length (CL) of the second sub-pattern (1112b) is set to 0.3mm, the peak region (PR) of the electric field distribution of the antenna structure is formed in a direction perpendicular to the antenna structure. Therefore, when the length (CL) of the second sub-pattern (1112b) is 0.3mm, the electric field generated by the first cavity (1210) and the second cavity (1220) can be combined in phase with the electric field generated by the dipole antenna. The electric field generated by the first cavity (1210) and the second cavity (1220) is combined in phase with the electric field generated by the dipole antenna, thereby improving the radiation gain performance.

[0176] FIG. 15c(b) shows the 3D radiation pattern of the antenna structure when the length (CL) of the second sub-pattern (1112b) is 0.3 mm. Referring to FIG. 10b, FIG. 15b(a), and FIG. 15c(b), when the length (CL) of the second sub-pattern (1112b) is 0.3 mm or 0.5 mm, the radiation pattern component by the first cavity (1210) and the second cavity (1220) and the radiation pattern component by the dipole antenna are combined in the vertical direction of the antenna structure. The peak value of the radiation pattern in FIG. 14c(b) when the length (CL) of the second sub-pattern (1112b) is 0.3 mm has a larger value than the peak value of the radiation pattern in FIG. 14c(a) when the length (CL) of the second sub-pattern (1112b) is 1.1 mm. Accordingly, if the length (CL) of the second sub-pattern (1112b) is 0.3mm, the phase of the electric field component or the phase of the radiation pattern component of the cavity and dipole antenna are combined in phase in the vertical direction, thereby improving directivity. Accordingly, if the length (CL) of the second sub-pattern (1112b) is 0.3mm, the radiation pattern peak value increases, thereby improving antenna performance. Additionally, if the length (CL) of the second sub-pattern (1112b) is 0.3mm, the radiation pattern is formed in a left-right symmetrical shape with respect to the vertical direction, thereby improving antenna performance.

[0177] The cavity-backed microstrip dipole antenna structure has been described above. The cavity-backed microstrip dipole antenna array structure will be described in detail below. In this regard, FIGS. 16a and 16b show the cavity-backed microstrip dipole antenna array structure. FIG. 16a is an enlarged perspective view of a portion of the cavity-backed microstrip dipole antenna array structure. FIG. 16b is a front view of the cavity-backed microstrip dipole antenna array structure.

[0178] Although the antenna array structure of FIGS. 16a and 16b is illustrated as a 1x8 array antenna, it is not limited thereto and can be changed to a 1x4, 1x6, 1x10, 1x12, or 1x16 array antenna. Alternatively, the antenna array structure of FIGS. 16a and 16b can also be implemented as a two-dimensional array antenna, such as an M x N array.

[0179] Referring to FIGS. 7a through 16b, a cavity-backed microstrip dipole antenna array (1100) may be configured to include a PCB (1100) and a metallic substrate (1200). In this regard, the description of a single antenna structure having a plurality of cavities described above may also be applied to the dipole antenna array structure of FIGS. 15a and 15b.

[0180] A metal substrate (1200) may be placed in the lower region of the PCB (1100). The PCB (1100) and the metal substrate (1200) may be referred to as the first substrate and the second substrate, respectively.

[0181] The PCB (1100) may be configured to include a dielectric substrate (1010), a ground (1110g), and radiators (1110). The PCB (1100) may be configured to further include a microstrip feeder (1110f) and a conductive pattern (1120). The radiators (1110) may be configured to include a first antenna element (EL1) through an eighth antenna element (EL8).

[0182] A dielectric substrate (1010) may have a first surface (S1) and a second surface (S2). The second surface (S2) may be opposite to the first surface (S1). The first surface (S1) and the second surface (S2) may each form the rear surface and the front surface of the dielectric substrate (1010). A ground (1110g) may be placed on the second surface (S2) of the dielectric substrate (1010). The ground (1110g) may be configured to include a plurality of open areas. The ground (1110g) may be configured to include a first open area (OA1) to a tenth open area (OA10) in one axial direction. Cavities may be formed corresponding to the inclusion of the first open area (OA1) to the tenth open area (OA10).

[0183] An antenna element may not be placed in the first open area (OA1), and only a cavity (1211) may be formed. A first and second cavity (1211, 1221) may be formed in the other axial direction. The size, shape, and depth of the first cavity (1211) may be formed to be the same as the size, shape, and depth of the second cavity (1221).

[0184] A first antenna element (EL1) may be placed in a second open area (OA2), and a cavity (1212) may be formed in the lower part. The size, shape, and depth of the first cavity (1212) may be formed to be the same as the size, shape, and depth of the second cavity (1222). The size and depth of the third cavity (1232) may be formed to be smaller than the size and depth of the second cavity (1222).

[0185] A second antenna element (EL2) may be placed in a third open area (OA3), and a cavity (1213) may be formed in the lower part. The size, shape, and depth of the first cavity (1213) may be formed to be the same as the size, shape, and depth of the second cavity (1223). The size and depth of the third cavity (1233) may be formed to be smaller than the size and depth of the second cavity (1223). In a 1x8 array antenna structure, 10 cavities may be arranged in one axial direction and 3 cavities may be arranged in the other axial direction. In a 1xN array antenna structure, (N+2) cavities may be arranged in one axial direction and 3 cavities may be arranged in the other axial direction.

[0186] In the foregoing, a cavity-backed microstrip dipole antenna structure according to one aspect of the present specification has been described. Below, a microstrip dipole antenna structure having a cavity-backed and gap-coupled structure according to another aspect of the present specification will be described. In this regard, the description of the cavity-backed microstrip dipole antenna structure described above may also be applied to the microstrip dipole antenna structure having a cavity-backed and gap-coupled structure below.

[0187] Hereinafter, with reference to FIGS. 9a through 11 and FIG. 15, a microstrip dipole antenna structure with a cavity-backed and gap-coupled structure will be described. The microstrip dipole antenna structure may be configured to include a PCB (1100) and a metal substrate (1200).

[0188] The PCB (1100) may be configured to include a dielectric substrate (1010), a ground (1110g), a first radiator (1111a), a second radiator (1111b), a first gap (G1) and a second gap (G2). The PCB (1100) may be configured to further include a microstrip feeder (1110f) and a conductive pattern (1120).

[0189] The ground (1110g) may be placed on the first surface (S1) of the dielectric substrate (1010). The ground (1110g) may include a first open area (OA1), a second open area (OA2), and a third open area (OA3).

[0190] A first radiator (1111a) may be placed in a first open area (OA1) on a first surface (S1) of a dielectric substrate (1010). A first end of the first radiator (1111a) may be connected to a first portion (1111g) of ground (1110g). A second radiator (1111b) may be placed in a first open area (OA1) on a first surface (S1) of a dielectric substrate (1010). A second end of the second radiator (1111b) may be connected to a second portion (1112g) of ground (1110g).

[0191] A first gap (G1) may be disposed between a first portion (1111g) of ground (1110g) and a second portion (1112g) of ground (1110g). A second gap (G2) may be disposed between a first radiator (1111a) and a second radiator (1111b). A microstrip feeder (1110f) may be disposed on a second surface (S2) of a dielectric substrate (1010). The microstrip feeder (1110f) may be electrically coupled to the first portion (1111g) and the second portion (1112g) of ground (1110g).

[0192] A conductive pattern (1120) may be disposed on a first surface (S1) of a dielectric substrate (1010). The conductive pattern (1120) may be electrically coupled to a second end of a first radiator (1111a). The conductive pattern (1120) may be electrically coupled to a fourth end of a second radiator (1111b). Although the first and second radiators (1111a, 1111b) and the conductive pattern (1120) are not directly connected, they are spaced apart by a predetermined distance so that the signals of the first and second radiators (1111a, 1111b) can be coupled to the conductive pattern (1120). The first and second radiators (1111a, 1111b) and the conductive pattern (1120) are each connected to the ground (1110g), so that the first and second radiators (1111a, 1111b) and the conductive pattern (1120) are not directly connected but are connected through the ground (1110g).

[0193] The metal substrate (1200) may include a third surface (S3), a fourth surface (S4), a first cavity (1210), a second cavity (1220), and a third cavity (1230). The fourth surface (S4) may be on the opposite side from the third surface (S3). The fourth surface (S4) of the metal substrate (1200) may be formed to face the first surface (S1) of the dielectric substrate (1010). The height of the metal substrate (1200) may be formed to be 1.0 mm. The height of the dielectric substrate (1010) may be formed to be 80 µm.

[0194] A first cavity (1210) may be disposed on a fourth surface (S4) of a metal substrate (1200). The first cavity (1210) may be formed at a position overlapping with the first and second radiators (1111a, 1111b) and the first portion of the conductive pattern (1200). A second cavity (1220) may be disposed on a fourth surface (S4) of a metal substrate (1200). The second cavity (1220) may be formed at a position overlapping with the second portion of the conductive pattern (1200). A third cavity (1230) may be disposed on a fourth surface (S4) of a metal substrate (1200). The third cavity (1230) may be formed to be connected to the first cavity (1210) and the second cavity (1220). The third cavity (1230) may be formed at a position overlapping the intermediate portion between the first portion (1121) and the second portion (1122) of the conductive pattern (1120). The size, shape, and depth of the first cavity (1210) may be formed to be the same as the size, shape, and depth of the second cavity (1220). The size and depth of the third cavity (1230) may be formed to be smaller than the size and depth of the first cavity (1210) or the second cavity (1220).

[0195] The interior of the first cavity (1210), the interior of the second cavity (1220), and the interior of the third cavity (1230) can be formed of air.

[0196] The ground (1110g) can form an open area (OA1). First and second radiators (1111a, 111b) may be provided in the open area (OA1). The open area (OA1) of the ground (1110g) may be formed smaller than the size of the first cavity (1210).

[0197] A first part (1111s) of a slot (1110s) may be formed between the first radiator (1111a) and the second radiator (1111b). A second part (1112s) of a slot (1110s) may be formed on the ground (1110g) connected to the first radiator (1111a) and the second radiator (1111b). The first part (1111s) of the slot and the second part (1112s) of the slot may be formed to be connected. The gap (G1) of the second part (1112s) of the slot may be formed wider than the gap (G2) of the first part (1111s) of the slot.

[0198] The dimensions of the first cavity (1210) and the second cavity (1220) may be 1.18 x 0.74 mm in the horizontal and vertical directions. The depth of the first cavity (1210) and the second cavity (1220) may be 0.35 mm. The depth of the third cavity (1230) may be 0.13 mm.

[0199] The first cavity (1210) and the second cavity (1220) may each be arranged in three units in the horizontal direction in the central area and in the side area and the other area adjacent to the central area. The third cavity (1230) may be configured to connect the first cavity (1211) and the second cavity (1221) in the central area where the first radiator (1111a) and the second radiator (1111b) are arranged. The size of the third cavity (1230) may be formed to be 0.12 x 0.5 mm in the horizontal and vertical directions.

[0200] An antenna module to which the cavity-backed microstrip dipole antenna structure disclosed in this specification is applied may be configured as an array antenna within an electronic device. In this regard, FIG. 17a shows a structure in which an antenna module formed as an array antenna, comprising a first type antenna and a second type antenna, is disposed in an electronic device. FIG. 17b is an enlarged view of a plurality of array antenna modules.

[0201] Referring to FIGS. 1 to 17b, the array antenna may include a first array antenna module (1100-1) and a second array antenna module (1100-2) spaced apart from the first array antenna module (1100-1) at a predetermined interval in a first horizontal direction. Meanwhile, the number of array antennas is not limited to two, and may be implemented with three or more as shown in FIG. 16b. Accordingly, the array antenna may be configured to include the first array antenna module (1100-1) to the third array antenna module (1100-3).

[0202] The processor (1400) of FIGS. 5 to 6c can control the first and second array antenna modules (1100-1, 1100-2) respectively to form a first beam and a second beam in a first direction and a second direction, respectively. That is, the first array antenna module (1100-1) can be used to form a first beam in a first direction in a horizontal direction. Additionally, the second array antenna module (1100-2) can be used to form a second beam in a second direction in a horizontal direction. In this regard, the processor (1400) can perform multiple input / output (MIMO) using the first beam in the first direction and the second beam in the second direction.

[0203] The processor (1400) can form a third beam in a third direction using the first and second array antenna modules (1100-1, 1100-2). In this regard, the processor (1400) can control the transceiver circuit (1250) so that signals received through the first and second array antenna modules (1100-1, 1100-2) are combined. Additionally, the processor (1400) can control the first and second array antenna modules (1100-1, 1100-2) through the transceiver circuit (1250) so that signals transmitted to each antenna element are distributed. The processor (1400) can perform beamforming using a third beam having a narrower beam width than the first and second beams.

[0204] Meanwhile, the processor (1400) can perform multiple input / output (MIMO) using a first beam in a first direction and a second beam in a second direction, and can perform beam forming using a third beam having a narrower beam width than the first beam and the second beam. In this regard, if the quality of the first signal and the second signal received from other electronic devices around the electronic device is below a threshold, beam forming can be performed using the third beam.

[0205] The number of elements in an array antenna is not limited to 2, 3, 4, etc. as illustrated. For example, the number of elements in an array antenna can be expanded to 2, 4, 8, 16, etc. Accordingly, the array antenna can be configured as a 1x2, 1x3, 1x4, 1x5, 1x8 array antenna.

[0206] Meanwhile, FIG. 18 shows antenna modules combined with different coupling structures at specific locations of an electronic device according to embodiments. Referring to FIG. 18(a), the antenna module (1100) can be positioned substantially horizontally with respect to the display (151) in the lower region of the display (151). Accordingly, a beam (B1) can be generated in the downward direction of the electronic device through one of the array antennas among the plurality of array antenna modules. Meanwhile, another beam (B2) can be generated in the forward direction of the electronic device through another array antenna among the plurality of array antenna modules.

[0207] Referring to FIG. 18(b), the array antenna module (1100) can be positioned in the lower region of the display (151) substantially perpendicular to the display (151). Accordingly, a beam (B2) can be generated in the front direction of the electronic device through one of the array antennas of the plurality of array antenna modules. Meanwhile, another beam (B1) can be generated in the lower direction of the electronic device through another array antenna of the plurality of array antenna modules.

[0208] Referring to FIG. 18(c), the antenna module (1100) may be placed inside the rear case (1001) corresponding to the mechanical structure. It may be placed inside the rear case (1001) substantially parallel to the display (151). Accordingly, a beam (B2) can be generated in the downward direction of the electronic device through one of the array antennas among the plurality of array antenna modules. Meanwhile, another beam (B3) can be generated in the rear direction of the electronic device through another array antenna among the plurality of array antenna modules.

[0209] The cavity-backed microstrip dipole antenna and an electronic device equipped with the same have been described above. The technical effects of such a cavity-backed microstrip dipole antenna and an electronic device equipped with the same are described as follows.

[0210] According to an embodiment, an antenna module operating in the terahertz band and an electronic device equipped with the same can be provided.

[0211] According to an embodiment, a terahertz band antenna structure with high radiation gain and wide bandwidth performance can be designed through a multi-cavity structure.

[0212] According to the embodiment, high radiation gain performance can be secured across the entire 6G frequency band through the optimal design of the shape, size, and depth of the multi-cavity structure.

[0213] According to an embodiment, the electric field distribution between antenna structures can be synthesized in phase through the optimal design of the shape, size, and depth of the multi-cavity structure, thereby improving antenna directivity and radiation gain.

[0214] Further scope of the applicability of this specification will become apparent from the following detailed description. However, since various changes and modifications within the spirit and scope of this specification are clearly understood by those skilled in the art, specific embodiments, such as the detailed description and preferred embodiments of this specification, should be understood as being given merely as examples.

[0215] Computer-readable media include all types of recording devices in which data readable by a computer system is stored. Examples of computer-readable media include Hard Disk Drives (HDDs), Solid State Disks (SSDs), Silicon Disk Drives (SDDs), ROMs, RAMs, CD-ROMs, magnetic tapes, floppy disks, optical data storage devices, etc., and also include those implemented in the form of carrier waves (e.g., transmission over the Internet). Additionally, the computer may include a control unit of a terminal. Accordingly, the above detailed description should not be interpreted restrictively in all respects and should be considered exemplary. The scope of this specification should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalent scope of this specification are included within the scope of this specification.

Claims

Claim 1 A cavity-backed microstrip dipole antenna array comprises: a dielectric substrate; a ground disposed on a second surface of the dielectric substrate, wherein the ground includes a first open area, a second open area and a third open area; radiators disposed on the first open area on the second surface of the dielectric substrate, wherein a first end of the radiators is connected to a portion of the ground; a microstrip feeder disposed on the first surface of the dielectric substrate, wherein a portion of the ground is electrically coupled to the microstrip feeder; and a conductive pattern disposed on the second surface of the dielectric substrate, wherein the conductive pattern is electrically coupled to a second end of the radiators. and a metal substrate, wherein the metal substrate comprises: a third surface; a fourth surface opposite to the third surface—the fourth surface of the metal substrate faces with the first surface of the dielectric substrate; a first cavity disposed on the fourth surface of the metal substrate—the first cavity is formed at a position overlapping with the radiators and the first portion of the conductive pattern; a second cavity disposed on the fourth surface of the metal substrate—the second cavity is formed at a position overlapping with the second portion of the conductive pattern; A dipole antenna array comprising: a third cavity disposed on a fourth surface of the metal substrate—the third cavity being connected to the first cavity and the second cavity, and the third cavity being formed at a position overlapping with an intermediate portion between the first and second portions of the conductive pattern— wherein the size, shape, and depth of the first cavity are the same as the size, shape, and depth of the second cavity, and the size and depth of the third cavity are smaller than the size and depth of the second cavity. Claim 2 A dipole antenna array according to claim 1, wherein the interior of the first cavity, the interior of the second cavity and the interior of the third cavity are formed of air. Claim 3 A dipole antenna array according to claim 1, wherein the ground forms an open region and radiators are provided in the open region. Claim 4 In claim 3, the dipole antenna array, wherein the open area of ​​the ground is smaller than the size of the first cavity. Claim 5 A dipole antenna array according to claim 1, wherein the radiators are formed with a first radiator pattern and a second radiator pattern, a first portion of a slot is formed between the first radiator pattern and the second radiator pattern, a second portion of the slot is formed on the ground connected to the radiators, the first portion of the slot and the second portion of the slot are connected, and the gap of the second portion of the slot is formed wider than the first portion of the slot. Claim 6 A dipole antenna array according to claim 1, wherein the dimensions of the first cavity and the second cavity are 1.18 mm x 0.74 mm in the horizontal and vertical directions, and the depth of the first cavity and the second cavity is 0.35 mm. Claim 7 A dipole antenna array according to claim 6, wherein the depth of the third cavity is 0.13 mm. Claim 8 A dipole antenna array according to claim 7, wherein the first cavity and the second cavity are each arranged in three places in a central area and a side area and a side area adjacent to the central area in the horizontal direction, and the third cavity is configured to connect the first cavity and the second cavity in the central area where the radiator is arranged, and the size of the third cavity is 0.12 mm X 0.5 mm in the horizontal and vertical directions. Claim 9 A dipole antenna array according to claim 1, wherein the height of the metal substrate is 1.0 mm. Claim 10 In claim 9, a dipole antenna array wherein the height of the dielectric substrate is 80 µm. Claim 11 A cavity-backed microstrip dipole antenna array comprises: a dielectric substrate; a ground disposed on a first surface of the dielectric substrate, wherein the ground comprises a first open area, a second open area, and a third open area; a first radiator disposed on the first open area on the first surface of the dielectric substrate, wherein a first end of the first radiator is connected to a first portion of the ground; a second radiator disposed on the first open area on the first surface of the dielectric substrate, wherein a third end of the second radiator is connected to a second portion of the ground; a first gap disposed between the first portion of the ground and the second portion of the ground; a second gap disposed between the first radiator and the second radiator; a microstrip feeder disposed on a second surface of the dielectric substrate, wherein the microstrip feeder is electrically coupled to the first portion and the second portion of the ground; and a conductive pattern disposed on the first surface of the dielectric substrate, wherein the conductive pattern is a first radiator A Printed Circuit Board (PCB) comprising: a second end and a fourth end of the second radiator, electrically coupled thereto; and a metal substrate, wherein the metal substrate comprises: a third surface; a fourth surface opposite to the third surface, wherein the fourth surface of the metal substrate faces a first surface of the dielectric substrate; a first cavity disposed on the fourth surface of the metal substrate, wherein the first cavity is formed at a position overlapping with the first and second radiators and a first portion of the conductive pattern; and a second cavity disposed on the fourth surface of the metal substrate, wherein the second cavity is formed at a position overlapping with a second portion of the conductive pattern.and a third cavity disposed on a fourth surface of the metal substrate - the third cavity is connected to the first cavity and the second cavity, and the third cavity is formed at a position overlapping with an intermediate portion between the first and second portions of the conductive pattern - wherein the size, shape, and depth of the first cavity are the same as the size, shape, and depth of the second cavity, and the size and depth of the third cavity are smaller than the size and depth of the second cavity, a dipole antenna array; Claim 12 A dipole antenna array according to claim 11, wherein the interior of the first cavity, the interior of the second cavity and the interior of the third cavity are formed of air. Claim 13 A dipole antenna array according to claim 11, wherein the ground forms an open region, and the first and second radiators are provided in the open region. Claim 14 In claim 13, the dipole antenna array, wherein the open area of ​​the ground is smaller than the size of the first cavity. Claim 15 A dipole antenna array according to claim 11, wherein a first portion of a slot is formed between the first radiator and the second radiator, a second portion of the slot is formed on the ground, the first portion of the slot and the second portion of the slot are connected, and the gap of the second portion of the slot is formed wider than the first portion of the slot. Claim 16 A dipole antenna array according to claim 11, wherein the dimensions of the first cavity and the second cavity are 1.18 mm x 0.74 mm in the horizontal and vertical directions, and the depth of the first cavity and the second cavity is 0.35 mm. Claim 17 A dipole antenna array according to claim 16, wherein the depth of the third cavity is 0.13 mm. Claim 18 A dipole antenna array according to claim 17, wherein the first cavity and the second cavity are each arranged in three units in a central area and a side area and a side area adjacent to the central area in the horizontal direction, and the third cavity is configured to connect the first cavity and the second cavity in the central area where the radiator is arranged, and the size of the third cavity is 0.12 mm X 0.5 mm in the horizontal and vertical directions. Claim 19 A dipole antenna array according to claim 11, wherein the height of the metal substrate is 1.0 mm. Claim 20 A dipole antenna array according to claim 19, wherein the height of the dielectric substrate is 80 µm.

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