Ceramic heater for semiconductor manufacturing equipment

Abstract

The present invention relates to a ceramic heater heating wire terminal for a semiconductor manufacturing apparatus and a ceramic heater for a semiconductor manufacturing apparatus including the same. A ceramic heater for a semiconductor manufacturing apparatus according to one embodiment of the present invention comprises: a ceramic substrate having a wafer mounting surface formed thereon; and a heating wire terminal located within the ceramic substrate; wherein the heating wire terminal further comprises at least one through-hole formed in the direction of the wafer mounting surface.

Description

Technology Field

[0001] The present invention relates to a ceramic heater for a semiconductor manufacturing apparatus. Background Technology

[0003] Generally, semiconductor devices or display devices are manufactured by sequentially stacking multiple thin film layers, including dielectric and metal layers, on a glass substrate, a flexible substrate, or a semiconductor wafer substrate, and then patterning them. These thin film layers are sequentially deposited on the substrate through a Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD) process.

[0004] In these CVD and PVD devices, heaters are installed to support glass substrates, flexible substrates, semiconductor wafer substrates, etc., and to apply a predetermined amount of heat. The heaters are also used to heat the substrates during the etching process of thin film layers formed on the support substrates and the firing process of photoresist. Ceramic heaters are widely used as heaters installed in the CVD and PVD devices in accordance with the requirements for precise temperature control, miniaturization of wiring in semiconductor devices, and precise heat treatment of semiconductor wafer substrates.

[0005] Figure 1 is a drawing showing the configuration of a ceramic heater according to the prior art.

[0006] As shown in FIG. 1, a ceramic heater (100) can be used to support a substrate, such as a wafer, in a semiconductor manufacturing process and to heat the substrate to a process temperature, for example, a temperature for performing a CVD process or a PVD process.

[0007] A conventional ceramic heater (100) has a circular plate-like structure and is composed of a ceramic heater body (110), which is a circular flat plate member manufactured using a ceramic material such as aluminum nitride (AlN) or aluminum oxide (Al2O3), and a support member (120) mounted on the lower part of the ceramic heater body (110). Here, the ceramic heater body (110) includes a high-frequency electrode (or ground electrode, 111) that discharges the current charged in the ceramic heater (100) to ground when plasma is generated, a heating wire (113) that generates thermal energy to heat a substrate, a high-frequency electrode terminal (112) that electrically connects the high-frequency electrode (111) and the ground rod (121), and a heating wire terminal (114) that electrically connects the heating wire (113) and the heating element rod (123). The ceramic support (120) includes a grounding rod (121) that connects a high-frequency electrode (111) to ground and a heating element rod (123) that connects a heating wire (113) to an external power source (not shown).

[0008] Internal cracks occur due to thermal expansion of the heating element terminals, and cracks occur preferentially, particularly at the corners of the terminals, due to stress concentration. These cracks spread into the ceramic substrate and can eventually cause the entire heater to fail due to repeated thermal cycles or thermal stress.

[0009] In addition, since the bonding surface is formed only on the upper surface of the conductor or rod, there is a disadvantage of being vulnerable to short circuits caused by thermal expansion and contraction due to low bonding strength resulting from the bonding over a narrow area.

[0010] Subsequently, when repairing the ceramic heater, if the power supply is disconnected, the terminal or the heating wire connected to the terminal may become detached. In this process, the heating wire may be damaged or short-circuited. Even if the power supply rod and the terminal connected to it are forcibly inserted back into their original positions and brazing is performed after the repair, the reliability of the heater function is reduced due to the already short-circuited heating wire, which may lead to reduced product reliability and a shortened lifespan after the repair.

[0011] These problems lead to a decline in semiconductor manufacturing efficiency, so they are issues that must be resolved.

[0012] The aforementioned background technology is one that the inventor possessed or acquired in the process of deriving the disclosure of the present invention, and it cannot be considered as prior art disclosed to the general public prior to the filing of this application. The problem to be solved

[0014] The present invention aims to solve the aforementioned problems, and the objective of the present invention is to provide a ceramic heater for a semiconductor manufacturing apparatus with an improved structure that prevents damage to the joint or cracking of the ceramic substrate due to stress concentration even when exposed to thermal loads.

[0015] Another objective of the present invention is to provide a ceramic heater for a semiconductor manufacturing apparatus with an improved structure that allows the terminal to be stably positioned inside the ceramic heater so as to prevent the detachment of the terminal and the detachment of the heating wire connected to the terminal that may occur during the repair process.

[0016] However, the problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0018] A ceramic heater for a semiconductor manufacturing apparatus according to one embodiment of the present invention comprises: a ceramic substrate having a wafer mounting surface formed thereon; and a heating wire terminal located within the ceramic substrate; wherein the heating wire terminal further comprises at least one through-hole formed in the direction of the wafer mounting surface.

[0019] In one embodiment, a heating wire may be disposed in the through-hole portion.

[0020] In one embodiment, the through-hole portion further includes a slit-shaped opening; and the slit-shaped opening may be extended and connected to the through-hole portion.

[0021] In one embodiment, it further includes a cylindrical alignment portion formed in the opposite direction of the wafer mounting surface; the alignment portion is formed from the opposite direction of the mounting surface toward the wafer mounting surface, and an electrical supply rod may be disposed within the alignment portion.

[0022] In one embodiment, the alignment portion may form a bonding surface on the heating wire terminal.

[0023] In one embodiment, a part of the alignment portion may include the heating wire terminal.

[0024] In one embodiment, a side joint surface may be formed on a part of the alignment portion.

[0025] In one embodiment, the heating wire terminal, excluding the alignment portion, may be surrounded by a ceramic substrate.

[0026] In one embodiment, a filler that combines the heating wire terminal and the electric supply rod inside the alignment portion may be further included.

[0027] In one embodiment, the filler may include gold (Au), silver (Ag), or both.

[0028] In one embodiment, the alignment member may further include a conductor (Kovar) in contact with the electric supply rod.

[0029] In one embodiment, the electric supply rod may comprise at least one selected from the group consisting of nickel (Ni), tungsten (W), molybdenum (Mo), palladium (Pd) and niobium (Nb).

[0030] In one embodiment, the cross-section of the heating wire terminal may include at least one selected from the group consisting of a circular, elliptical, curved, and figure-eight shape.

[0031] In one embodiment, when the cross-section of the heating wire terminal is figure-eight shaped, it includes an upper part, a middle part, and a lower part, and the diameter of the middle part may be smaller than the diameters of the upper and lower parts.

[0032] In one embodiment, the heating wire terminal may comprise at least one selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb) and palladium (Pd).

[0033] In one embodiment, the ceramic substrate may comprise at least one selected from the group consisting of aluminum nitride (AlN), alumina (Al2O3), silicon carbide (SiC), graphite, and quartz. Effects of the invention

[0035] A ceramic heater for a semiconductor manufacturing apparatus according to one embodiment of the present invention can prevent the occurrence of internal cracks by using a pseudo-spherical heating wire terminal to relieve stress. In addition, by forming a through-groove portion in the pseudo-spherical heating wire terminal, the detachment of the heating wire can be prevented, and by forming an alignment portion in the heating wire terminal, the bonding area can be expanded to the side of the electrical supply rod, thereby improving the bonding strength between the terminal and the electrical supply rod.

[0036] In addition, by forming a ceramic support fixed to the bottom of the similar spherical terminal, the terminal is positioned inside the plate when the power supply load is removed for repair, thereby preventing the terminal from becoming detached and preventing a short circuit between the heating wire terminal and the heating wire. Furthermore, by preventing the heating wire from becoming detached, the reliability of the product regarding the reconnection of the power supply load and the heating wire terminal during repair can be enhanced.

[0037] Additionally, the application of a spherical terminal reduces stress concentration, thereby ensuring product stability and extending the lifespan by preventing breakage of the ceramic heater body. Furthermore, functional stability can be ensured by improving the bonding strength between the heating wire terminal and the power supply rod. Additionally, the contact between the terminal and the heating wire can be improved as the groove is slightly compressed by external pressure during the press fit and sintering process, causing the contact surface between the heating wire and the through-groove to be more closely bonded. Brief explanation of the drawing

[0039] Figure 1 is a drawing showing the configuration of a ceramic heater according to the prior art. FIG. 2 is a schematic cross-sectional view of a ceramic heater for a semiconductor manufacturing apparatus according to one embodiment of the present invention. FIGS. 3 and FIGS. 4 are schematic cross-sectional views of a heating wire terminal according to one embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a heating wire terminal according to another embodiment of the present invention. FIGS. 6 to 8 are drawings showing cross-sections of heating wire terminals according to various embodiments of the present invention. FIGS. 9 to 12 are drawings showing a cross-section in which a ceramic heater heating wire terminal and an electric supply rod are combined for a semiconductor manufacturing apparatus according to one embodiment of the present invention. FIGS. 13 to 16 are cross-sectional drawings showing a ceramic heater and an electric supply rod combined for a semiconductor manufacturing apparatus according to various embodiments of the present invention. Specific details for implementing the invention

[0040] Hereinafter, embodiments are described in detail with reference to the attached drawings. However, various modifications may be made to the embodiments, and thus the scope of the patent application is not limited or restricted by these embodiments. It should be understood that all modifications, equivalents, and substitutions to the embodiments are included within the scope of the rights.

[0041] The terms used in the embodiments are for illustrative purposes only and should not be interpreted as intended to be limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0042] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the embodiments pertain. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0044] In addition, when describing with reference to the attached drawings, identical components are assigned the same reference numeral regardless of drawing symbols, and redundant descriptions thereof are omitted. When describing embodiments, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the embodiment, such detailed description is omitted.

[0045] In addition, terms such as first, second, A, B, (a), (b), etc. may be used when describing the components of the embodiments. These terms are used merely to distinguish the components from other components, and the essence, order, or sequence of the components is not limited by the terms.

[0046] Components included in any one embodiment and components having common functions shall be described using the same names in other embodiments. Unless otherwise stated, the description in any one embodiment may also apply to other embodiments, and specific descriptions shall be omitted to the extent of overlap.

[0048] Hereinafter, the ceramic heater for a semiconductor manufacturing apparatus according to the present invention will be described in detail with reference to the embodiments and drawings. However, the present invention is not limited to these embodiments and drawings.

[0050] A ceramic heater for a semiconductor manufacturing apparatus according to one embodiment of the present invention comprises: a ceramic substrate having a wafer mounting surface formed thereon; and a heating wire terminal located within the ceramic substrate; wherein the heating wire terminal further comprises at least one through-hole formed in the direction of the wafer mounting surface.

[0051] FIG. 2 is a schematic cross-sectional view of a ceramic heater for a semiconductor manufacturing apparatus according to one embodiment of the present invention.

[0052] Referring to FIG. 2, a ceramic heater (200) for a semiconductor manufacturing apparatus according to one embodiment of the present invention includes a ceramic substrate (210) and a heating wire terminal (214).

[0053] The ceramic substrate (210) may comprise at least one selected from the group consisting of aluminum nitride (AlN), alumina (Al2O3), silicon carbide (SiC), graphite, and quartz.

[0054] The ceramic substrate (210) above can be made into a heating element that is rigid up to high temperatures, has high purity and excellent heat resistance, and has high durability by using the materials listed above, and is suitable for a heating support substrate.

[0055] Preferably, the ceramic substrate (210) may be aluminum nitride (AlN).

[0056] The heating wire terminal (214) is electrically connected to an electrode (not shown) within the ceramic substrate (210), and at least a portion of the cross-section includes a curve.

[0057] FIGS. 3 and FIGS. 4 are schematic cross-sectional views of a heating wire terminal according to one embodiment of the present invention.

[0058] Referring to FIGS. 3 and 4, the heating wire terminal (214) may further include at least one through-hole portion (212) formed in the direction of the wafer mounting surface. A heating wire (216) may be disposed in the through-hole portion (212).

[0059] As shown in FIGS. 3 and 4, one heating wire (216) may be placed in a single through-hole portion (212), and as shown in FIG. 9 which will be described later, if there are two through-hole portions (212), two heating wires (216) may be placed. In addition, depending on the arrangement shape, more than one may be formed.

[0060] The above-mentioned through-hole (212) is formed with a structure that is open at the heating wire terminal (214), and the heating wire (216) can be inserted and seated in the through-hole (212) to fix the heating wire (216). Additionally, the method of placing and fixing the heating wire (216) in the through-hole (212) may be a press fit method. The method of placing and fixing the heating wire (216) in the through-hole (212) may also be a method of fixing by applying separate external pressure after the press fit. After the heating wire (216) is placed in the through-hole (212), the through-hole (212) may be fixed a second time by compressing it inside the ceramic substrate (210) that is compressed during the hot press process. Through this, the heating wire terminal (214) and the heating wire (216) can be completely fixed. Accordingly, due to the interlocking method of the heating wire (216) and the heating wire terminal (214), contact short circuits caused by thermal expansion and contraction can be prevented.

[0061] Conventionally, a hole was machined in the heating wire terminal, and the end of the heating wire was inserted into the hole and wound. However, as shown in FIG. 4, when the heating wire (216) is inserted into the through-hole (212), the heating wire (216) does not detach from the heating wire terminal (214), and the heating wire does not break.

[0063] The heating wire terminal (214) of the present invention may further include a cylindrical alignment portion (218) formed from the lower part of the ceramic substrate (210) in the opposite direction of the through-type groove portion (212).

[0064] The alignment portion (218) may be formed at the bottom of the ceramic substrate (210), extend in the direction of the wafer mounting surface, and extend to the heating wire terminal (214) to form a bonding surface (219).

[0065] The above alignment portion (218) may be extended to the heating wire terminal and may include a corner portion within the heating wire terminal (214). The corner portion may be varied depending on the shape of the end surface of the electric supply rod.

[0066] The alignment portion (218) is formed in the direction of the wafer mounting surface from the rear surface of the ceramic substrate opposite to the wafer mounting surface, and a side bonding surface (217) is formed on a part of the alignment portion (218) extended to the heating wire terminal (214), and an electric supply rod (not shown) may be disposed within the side bonding surface (217).

[0067] The above alignment part (218) may be composed of different materials, specifically, the metal material of the heating wire terminal (214) and the ceramic material.

[0068] The above alignment portion (218) forms a bonding surface (219) on the heating wire terminal (214), and the bonding surface (219) may be horizontal to the wafer mounting surface.

[0069] A portion of the alignment part (218) may include the heating wire terminal (214).

[0070] A side joint surface may be formed on a part of the alignment portion (218).

[0071] The heating wire terminal (214), excluding the bonding surface (219) and the side bonding surface (217) formed by the alignment portion (218) extended to the terminal, may be surrounded by a ceramic substrate (210).

[0072] Looking at the dotted line portion of FIG. 2, a part of the ceramic substrate (210) formed during the processing of the alignment portion (218) at the bottom of the heating wire terminal (214) can fix the bottom surface of the spherical terminal to stably maintain the connection between the heating wire (216) and the heating wire terminal (214), and prevent the terminal from detaching in the direction of the electrical supply rod during future repair or replacement processes.

[0074] FIG. 5 is a schematic cross-sectional view of a heating wire terminal according to another embodiment of the present invention.

[0075] Referring to FIG. 5, the through-hole portion (212) of the heating wire terminal according to another embodiment of the present invention may further include a slit-shaped opening (213).

[0076] The above slit-shaped opening (213) may be formed in the direction of the wafer mounting surface on the cross-section of the heating wire terminal or in a direction horizontal to the wafer mounting surface, and the above slit-shaped opening (213) may be extended and connected to the through-shaped groove (212).

[0077] The heating wires can be inserted through the slit-shaped opening (213) or sequentially inserted into the through-shaped groove (212) like threading beads. This method of arranging the heating wires improves work convenience during the manufacturing process and is also advantageous for ensuring contact reliability between the heating wires and the terminals.

[0078] A method for fixing the heating wire within the terminal is to place the heating wire in a through-hole groove (212), and then apply external pressure to the outer side of the terminal or the side of the slit-shaped opening (213) so that the groove compresses the heating wire, or the gap between the inner surfaces of the slit-shaped opening (213) narrows or comes into contact with each other, thereby compressing and fixing the heating wire. This method can be applied in the process before or during sintering, and the effect of increasing the contact strength with the heating wire can also be achieved as the groove is naturally compressed due to the pressure, thermal expansion, and condensation phenomena during sintering.

[0079] The heating wire terminal (214) may have a wide bonding area as shown in FIG. 5, with an alignment portion (218) formed on the rear surface of the ceramic substrate in the part that contacts the electric supply rod and extending to the terminal portion.

[0080] The heating wire terminal (214) may be spherical or similarly spherical.

[0081] The cross-section of the heating wire terminal (214) may include at least one selected from the group consisting of a circular, elliptical, curved, and figure-eight shape.

[0083] FIGS. 6 to 8 are drawings showing cross-sections of heating wire terminals according to various embodiments of the present invention.

[0084] FIG. 6 is a drawing showing the case where the cross-section of a ceramic heater heating wire terminal for a semiconductor manufacturing apparatus according to one embodiment of the present invention is circular (214a).

[0085] FIG. 7 is a drawing showing the case where the cross-section of a ceramic heater heating wire terminal for a semiconductor manufacturing apparatus according to another embodiment of the present invention is elliptical (214b).

[0086] FIG. 8 is a drawing showing the case where the cross-section of a ceramic heater heating wire terminal for a semiconductor manufacturing apparatus according to another embodiment of the present invention is figure-eight shaped (214c).

[0087] As shown in FIG. 8, when the cross-section of the ceramic heater heating wire terminal for the semiconductor manufacturing device is figure-eight shaped, it includes an upper part, a middle part, and a lower part, and the diameter of the middle part may be smaller than the diameters of the upper and lower parts. Since the middle part is constricted, when a heating wire is wound onto the terminal and brought into contact with the heating wire terminal, there is no risk of the coil unraveling due to the curve of the heating wire terminal. After winding the heating wire onto the terminal, the wound coil member may be secondarily fixed by compressing it due to terminal deformation during the H / P process.

[0088] The heating wire terminal (214) may include at least one selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb) and palladium (Pd).

[0089] Preferably, the heating wire terminal (214) may be made of molybdenum (Mo).

[0091] FIGS. 9 to 12 are drawings showing a cross-section in which a ceramic heater heating wire terminal and an electric supply rod are combined for a semiconductor manufacturing apparatus according to one embodiment of the present invention.

[0092] FIG. 9 is a drawing showing a heating wire (216) connected to a part of a heating wire terminal (214), and FIG. 10 is a drawing showing a heating wire (216) inserted into a through-hole and fixed to the heating wire (216).

[0093] The above alignment part (218) may further include a filler (220) that combines the heating wire terminal (214) and the electric supply rod (230) inside.

[0094] As shown in FIGS. 9 and 10, the ceramic heater for the semiconductor manufacturing device shows a cross-section in which a heating wire terminal (214) and an electric supply rod (230) are joined by a filler (220).

[0095] The alignment portion (218) inside the heating wire terminal (214) and the electric supply rod (230) are joined by a filler (220), and the bonding surface formed by the filler (220) is formed only on the alignment portion (218) inside the heating wire terminal (214), and the bonding surface is not formed on the ceramic substrate (210). As a result, a side bonding surface (217) is also formed on the side of the alignment portion (218), and the bonding strength is improved as the bonding area between the heating wire terminal (214) and the electric supply rod (230) increases.

[0096] By using the above filler (220) as an intermediate bonding medium, the difference in thermal stress between the heating wire terminal (214) and the electric supply rod (230) can be mitigated to reduce the risk of a short circuit, and furthermore, thermal expansion between the electric supply rod and the heating wire terminal can be mitigated.

[0097] In one embodiment, the electric supply rod (230) may comprise at least one selected from the group consisting of nickel (Ni), tungsten (W), molybdenum (Mo), palladium (Pd) and niobium (Nb).

[0098] The above filler may include gold (Au), silver (Ag), or both.

[0099] Preferably, the filler may be gold (Au).

[0100] The above alignment part (218) may further include a conductor (Kovar) (240) in contact between the heating wire terminal (214) and the electric supply rod (230).

[0101] The above conductor (240) may be used for joining the heating wire terminal (214) and the electric supply rod (230); joining between the heating wire terminal (214), the conductor (240), and the electric supply rod (230); or joining between the heating wire terminal (214), the conductor (240), the electric supply rod (230), and the filler.

[0102] The above conductor (240) may be formed such that all or part of the alignment portion (218) inserted into the alignment portion (218) has an outer diameter smaller than the inner diameter of the alignment portion (218).

[0104] FIGS. 11 and 12 are cross-sectional drawings showing a ceramic heater for a semiconductor manufacturing apparatus and an electric supply rod combined according to another embodiment of the present invention.

[0105] FIG. 11 is a drawing showing a heating wire (216) connected to a part of a heating wire terminal (214), and FIG. 12 is a drawing showing a heating wire (216) inserted into a through-hole and fixed to the heating wire (216).

[0106] As shown in FIGS. 11 and 12, the heating wire terminal (214), conductor (240), and electric supply rod (230) are combined by a filler (220) in a cross-section.

[0107] An electric supply rod (230) and a conductor (240) are joined by a filler (220) inside the heating wire terminal (214). The bonding surface formed by the filler (220) is formed only on the alignment portion (218) formed on the heating wire terminal (214), and no bonding surface is formed on the ceramic substrate (210). As a result, a side bonding surface (217) is formed on the side of the alignment portion (218), thereby increasing the bonding strength between the heating wire terminal (214), the conductor (240), and the electric supply rod (230), and improving the bonding strength. Additionally, the conductor (240) can serve as a thermal stress relief agent. Furthermore, the increased bonding strength between the terminal and the electric supply rod and / or between the terminal, the conductor, and the electric supply rod due to the increased filler bonding surface is advantageous for preventing short circuits.

[0109] FIGS. 13 to 16 are cross-sectional drawings showing a ceramic heater and an electric supply rod combined for a semiconductor manufacturing apparatus according to various embodiments of the present invention.

[0110] The heating wire terminal (214), conductor (240), and electric supply rod (230) are fixedly positioned in an aligned state by an alignment portion (218) formed on the lower part of the ceramic substrate (210) or on the heating wire terminal (214). The alignment portion (218) is formed in a cylindrical or uneven structure to ensure positional alignment upon insertion and minimize mechanical clearance, thereby contributing to improved assembly and prevention of detachment. Additionally, the formation of a bonding surface (219) and a side bonding surface (217) increases the bonding force between the terminal and the electric supply rod and / or between the terminal, conductor, and electric supply rod, which is advantageous for preventing short circuits.

[0111] Referring to FIG. 13, the structure is such that the electric supply rod (230) is directly inserted into the alignment portion (218) of the heating wire terminal (214), and no conductor is used. This structure has the advantage of being a simple bonding structure with excellent assembly and simplified structure, and a filler (220) can be interposed between the terminal and the rod to bond them. The filler (220) strengthens the bonding force and performs a stress distribution function according to the thermal cycle, thereby maintaining a stable bonding state even under high temperature conditions.

[0112] Referring to FIG. 14, the conductor (240) is inserted only in a portion of the alignment section (218), and the electric supply rod (230) is also inserted only in a portion of the terminal, forming a partial insertion type structure. The conductor (240) comes into contact with a portion of the surface or bottom surface of the heating wire terminal (214) and is joined to the electric supply rod (230) by a filler (220). Additionally, a portion of the electric supply rod (230) is joined to a portion of the terminal by a filler (220). This structure improves production efficiency by providing excellent assembly and a high degree of freedom for positional alignment. In particular, the contact area between the outer surface of the conductor and the inner surface of the alignment section of the terminal is wide, and a contact surface of at least a certain length is secured between the electric supply rod and the conductor, thereby improving the bonding strength through multi-faceted bonding.

[0113] Referring to FIG. 15, a conductor (240) is positioned on the top of an electric supply rod (230), and the conductor (240) is inserted into the alignment portion (218) of a heating wire terminal (214). The conductor (240) is directly bonded to the rod and has a structure that forms a bonding surface with the heating wire terminal (214) on only one side. A filler (220) is interposed between the conductor (240) and the heating wire terminal (214), and between the conductor (240) and the electric supply rod (230), and is bonded to each, thereby ensuring stress relief and stability of the heat transfer path without expanding the bonding area beyond what is necessary. Additionally, the conductor (240) is positioned in a shape that widely covers the top of the rod, thereby improving mechanical fixing strength and electrical connection reliability due to the increased bonding area, and the heat transfer path is maintained stably, which is particularly advantageous for semiconductor processes requiring high-temperature durability.

[0114] Referring to FIG. 16, the conductor (240) is inserted into the alignment portion (218) of the heating wire terminal (214), and the conductor (240) itself has a double insertion structure in which a groove is formed so that a part of the electric supply rod (230) is inserted. The conductor (240) is placed in the alignment portion formed in the heating wire terminal (214), and the electric supply rod (230) is aligned with the inner groove of the conductor (240), thereby maximizing positional alignment accuracy. This structure minimizes play during assembly and improves mechanical alignment, and the interlocking contact surface between the conductor (240) and the electric supply rod (230) is increased, thereby ensuring mechanical fixing force, electrical connection stability, and heat transfer path reliability. Additionally, a filler (220) is interposed between the conductor (240) and the electric supply rod (230), and between the conductor (240) and the heating wire terminal (214) to form a multi-sided bond, which improves durability against thermal shock and repeated cycles. The conductor (240) relieves stress concentration caused by differences in thermal expansion coefficients and also performs the function of suppressing cracks or damage by acting as a thermal stress relief layer. As the bonding surface of the filler (220) increases, the bonding strength between the terminal, the conductor (240), and the electric supply rod (230) is improved, and the multi-point bonding structure is advantageous for improving bonding strength and preventing electrical short circuits.

[0115] A ceramic heater for a semiconductor manufacturing apparatus according to one embodiment of the present invention includes a terminal that is quasi-spherical, thereby reducing stress concentration and ensuring product stability and lifespan by preventing fracture of the ceramic heater body. Additionally, functional stability can be ensured by improving the bonding strength between the heating wire terminal and the electrical junction rod. Furthermore, the uniformity of the heating reaction and heat transfer efficiency can be enhanced by improving contact between the terminal and the heating wire through the deformation of the through-groove portion by pressurizing the heating wire and the heating wire terminal. Additionally, the occurrence of internal cracks can be prevented by using a heating wire terminal that is close to spherical to relieve stress. Moreover, by forming an alignment portion on the quasi-spherical heating wire terminal, the bonding area can be extended to the side of the electrical supply rod, thereby improving the bonding strength between the terminal and the electrical supply rod.

[0117] The present invention will be described in detail below with reference to the following examples and comparative examples. However, the technical scope of the present invention is not limited or restricted by such examples.

[0119] [Example]

[0120] A through-groove was formed on the wafer mounting surface of the heating wire terminal, and an alignment portion was formed by machining the ceramic heater body and the heating wire terminal on the rear surface of the ceramic heater body in a vertical direction. The method of forming the through-groove and the alignment portion by machining the ceramic heater body and the heating wire terminal was performed by drilling or end milling. The through-groove was formed by first machining the ceramic heater body and the heating wire terminal through roughing using drilling, wire EDM, or end milling methods, and the contact surface of the alignment portion of the heating wire terminal, where the electric supply rod is mounted, was precision machined through finishing.

[0121] The diameter of the machining tool used for machining must be equal to or smaller than the diameter of the heating wire terminal before pressure sintering, and the diameter of the machining tool used for machining must be larger than the diameter of the electric supply rod.

[0122] Next, the alignment section and the electric supply rod were joined. A gold (Au) filler was first inserted into the alignment section of the heating wire terminal, and then the electric supply rod was inserted, after which the electric supply rod and the heating wire terminal were joined through a brazing process. A gold filler was first inserted into the alignment section of the heating wire terminal, and then a conductor (Kovar) was inserted. After that, an additional gold filler was inserted and the electric supply rod was inserted, and then the electric supply rod and the heating wire terminal were joined through a brazing process.

[0123] The brazing process was performed by applying a predetermined pressure to the electric supply rod in a vertical direction to the wafer mounting surface, creating a vacuum environment at 900 to 1100 ℃, and for a process time of 24 hours.

[0124] It was confirmed that the ceramic heater heating wire terminal for a semiconductor manufacturing apparatus manufactured according to an embodiment of the present invention has a heating wire embedded in the heater to provide precise heat, and can provide a terminal to maintain an electrical connection with the heating wire even in a high-temperature state.

[0126] Although the embodiments have been described above with reference to the limited drawings, those skilled in the art can apply various technical modifications and variations based on the above. For example, suitable results may be achieved even if the described techniques are performed in a different order than described, and / or if the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents.

[0127] Therefore, other implementations, other embodiments, and equivalents to the claims also fall within the scope of the claims set forth below. Explanation of the symbols

[0129] 100: Ceramic heater 110: Ceramic heater body 111: High-frequency electrode 112: High-frequency electrode terminal 113: Heating element 120: Ceramic support 121: Grounding rod 123: Heating element rod 210: Ceramic substrate 212: Through-groove 213: Slit-type opening 214: Heating wire terminal 216: Heating wire 217: Side joint surface 218: Alignment section 219: Joining surface 220: Filler 230: Electric supply load 240: Conductor

Claims

Claim 1 A ceramic heater for a semiconductor manufacturing apparatus comprising: a ceramic substrate having a wafer mounting surface formed thereon; and a spherical heating wire terminal located within the ceramic substrate; wherein the heating wire terminal further comprises: at least one through-shaped groove formed in the direction of the wafer mounting surface; and a slit-shaped opening formed extending from the through-shaped groove; wherein a heating wire is disposed in the through-shaped groove, and the slit-shaped opening extends to be connected to the through-shaped groove. Claim 2 delete Claim 3 delete Claim 4 A ceramic heater for a semiconductor manufacturing apparatus according to claim 1, further comprising a cylindrical alignment portion formed in the opposite direction of the wafer mounting surface; wherein the alignment portion is formed from the opposite direction of the mounting surface toward the wafer mounting surface, and an electric supply rod is disposed within the alignment portion. Claim 5 A ceramic heater for a semiconductor manufacturing device, wherein, in paragraph 4, the alignment portion forms a bonding surface to a heating wire terminal. Claim 6 A ceramic heater for a semiconductor manufacturing apparatus, wherein, in paragraph 4, a part of the alignment portion includes the heating wire terminal. Claim 7 A ceramic heater for a semiconductor manufacturing apparatus, wherein, in paragraph 4, a side bonding surface is formed on a part of the alignment portion. Claim 8 A ceramic heater for a semiconductor manufacturing apparatus according to claim 4, wherein the heating wire terminals, excluding the alignment portion, are surrounded by a ceramic substrate. Claim 9 A ceramic heater for a semiconductor manufacturing apparatus, further comprising, in paragraph 4, a filler that combines the heating wire terminal and the electric supply rod inside the alignment portion. Claim 10 In claim 9, the said filler is a ceramic heater for a semiconductor manufacturing apparatus comprising gold (Au), silver (Ag), or both. Claim 11 A ceramic heater for a semiconductor manufacturing apparatus, wherein, in paragraph 4, the alignment portion further comprises a conductor (Kovar) in contact with the electric supply rod. Claim 12 A ceramic heater for a semiconductor manufacturing apparatus according to claim 4, wherein the electric supply rod comprises at least one selected from the group consisting of nickel (Ni), tungsten (W), molybdenum (Mo), palladium (Pd) and niobium (Nb). Claim 13 A ceramic heater for a semiconductor manufacturing apparatus according to claim 1, wherein the cross-section of the heating wire terminal comprises at least one selected from the group consisting of a circular, elliptical, curved, and figure-eight shape. Claim 14 A ceramic heater for a semiconductor manufacturing apparatus according to claim 13, wherein the cross-section of the heating wire terminal is figure-eight shaped, comprising an upper part, a middle part, and a lower part, wherein the diameter of the middle part is smaller than the diameters of the upper part and the lower part. Claim 15 A ceramic heater for a semiconductor manufacturing apparatus according to claim 1, wherein the heating wire terminal comprises at least one selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb), and palladium (Pd). Claim 16 A ceramic heater for a semiconductor manufacturing apparatus according to claim 1, wherein the ceramic substrate comprises at least one selected from the group consisting of aluminum nitride (AlN), alumina (Al2O3), silicon carbide (SiC), graphite, and quartz.

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