Substrate cleaning apparatus, substrate processing apparatus, break-in apparatus, method for estimating the number of fine particles adhering to the substrate, method for determining the degree of contamination of the substrate cleaning member, and method for determining break-in processing

Abstract

The present invention provides a substrate cleaning device and a substrate processing device for monitoring the degree of contamination of a cleaning member, and a method for determining the degree of contamination of a substrate cleaning member. Additionally, the present invention provides a substrate cleaning device and a substrate processing device capable of estimating the number of fine particles attached to a substrate, and a method for estimating the number of fine particles attached to a substrate. A substrate cleaning device is provided, comprising: a substrate holding support member for holding and supporting a substrate; a substrate cleaning member that slides in contact with the held and supported substrate and cleans the substrate using a first cleaning liquid supplied from a first nozzle; a self-cleaning member that slides in contact with the substrate cleaning member at a retracted position spaced apart from the substrate holding support member and self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; a measuring means for measuring the physical property value of the drainage of the second cleaning liquid used for self-cleaning the substrate cleaning member; and a control unit for estimating the number of fine particles attached to the cleaned substrate based on the physical property value of the drainage.

Description

Technology Field

[0001] The present invention relates to a substrate cleaning device, a substrate processing device, a break-in device, a method for estimating the number of fine particles attached to a substrate, a method for determining the degree of contamination of a substrate cleaning member, and a method for determining the break-in process. Background Technology

[0002] Patent Document 1 discloses a substrate processing apparatus that sequentially performs polishing, cleaning, and drying treatments on a substrate. In the polishing treatment, the surface of the substrate is polished using a suspension (slurry) containing abrasive particles and a polishing aid. In the subsequent cleaning treatment, the slurry attached to the surface and back surface of the substrate by the polishing treatment is removed using a cleaning member. In the subsequent drying treatment, droplets attached to the surface and back surface of the substrate by the cleaning treatment are removed.

[0003] Here, if the cleaning treatment is not appropriate, defects may occur in the structure of the device formed on the substrate, and this may lead to defects in the characteristics of the device. Therefore, it is necessary to select a cleaning treatment method that reliably removes the slurry in a short time without causing destruction or corrosion of the device. Against this background, scrub cleaning using a cleaning member made of PVA sponge material is applied in the cleaning treatment, and various cleaning solutions are used in combination to play an auxiliary role (e.g., Patent Document 2).

[0004] In scrub cleaning, a cleaning element is brought into contact with a substrate. Therefore, the cleanliness of the cleaning element itself affects the quality of the cleaning effect. In other words, if the cleaning element itself is clean, the substrate can be properly cleaned. However, if the cleaning element becomes contaminated, while contaminants are removed from the substrate, there is a risk that contaminants deposited on the cleaning element may reattach to the substrate (reverse contamination), making it impossible to obtain a cleaning effect.

[0005] As one of the means to prevent this back-contamination, a self-cleaning method is known in which the cleaning member itself is cleaned at regular intervals or at regular intervals of processing (e.g., Patent Document 3). In addition, for new cleaning members, a break-in treatment (conditioning before starting use of the new cleaning member) is performed. Prior art literature

[0006] Japanese Patent Publication No. 2019-161107, Japanese Patent No. 5866227, Japanese Patent No. 3447869, Japanese Patent Publication No. Hei 10-163143, Japanese Patent Publication No. 2020-522126 The problem to be solved

[0007] One objective of the present invention is to provide a substrate cleaning device and a substrate processing device for monitoring the degree of contamination of a cleaning member, and a method for determining the degree of contamination of a substrate cleaning member. In addition, another objective of the present invention is to provide a substrate cleaning device and a substrate processing device capable of estimating the number of fine particles attached to a substrate, and a method for estimating the number of fine particles attached to a substrate. means of solving the problem

[0008] According to one aspect of the present invention, a substrate holding support member that holds and supports a substrate, and

[0009] A substrate cleaning member that cleans the substrate using a first cleaning liquid supplied from a first nozzle while making sliding contact with the substrate supported thereon, and

[0010] A self-cleaning member that self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle, while in a retracted position spaced apart from the substrate holding support member, and

[0011] A measuring means for measuring the physical property value of the drainage of the second cleaning solution used for self-cleaning of the substrate cleaning member, and

[0012] A substrate cleaning device is provided that includes a control unit for estimating the number of fine particles attached to the cleaned substrate based on the physical property value of the drainage solution.

[0013] The above physical properties may include one or more of the number of fine particles, pH value, electrical conductivity, and total organic carbon concentration.

[0014] According to one aspect of the present invention, a substrate holding support member that holds and supports a substrate, and

[0015] A substrate cleaning member that cleans the substrate using a first cleaning liquid supplied from a first nozzle while making sliding contact with the substrate supported thereon, and

[0016] A self-cleaning member that self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle, while in a retracted position spaced apart from the substrate holding support member, and

[0017] A measuring means for measuring the physical property value of the drainage of the second cleaning solution used for self-cleaning of the substrate cleaning member, and

[0018] A control unit for determining the degree of contamination of the substrate cleaning member based on the physical property value of the above drainage, and

[0019] A substrate cleaning device is provided, wherein the above physical property value includes the total organic carbon concentration.

[0020] The above control unit may estimate the number of fine particles attached to the cleaned substrate based on the physical property value of the drainage solution.

[0021] The above control unit may determine the operating conditions of self-cleaning based on the physical property value of the drainage liquid.

[0022] The above control unit may determine the operating conditions for substrate cleaning based on the physical property value of the drainage solution.

[0023] The above control unit may determine the replacement time of the substrate cleaning member based on the physical property value of the drainage liquid.

[0024] The substrate cleaning device comprises a first pipe that guides the drainage of the second cleaning liquid used for self-cleaning of the substrate cleaning member to the measuring means, and

[0025] A three-way valve provided in the first pipe above, and

[0026] A second pipe may be provided to supply flushing water to the measuring means through the above three-way valve.

[0027] According to one aspect of the present invention, a substrate polishing apparatus that polishes a substrate using a suspension, and

[0028] A substrate processing device equipped with the above-mentioned substrate cleaning device is provided.

[0029] According to one aspect of the present invention, a self-cleaning member that slides in contact with a substrate cleaning member before performing substrate cleaning and performs a break-in treatment of the substrate cleaning member using a cleaning liquid supplied from a nozzle, and

[0030] A measuring means for measuring the physical property value of the drainage of the cleaning solution used in the above break-in treatment, and

[0031] A break-in device is provided having a control unit that determines whether the break-in treatment is appropriate based on the physical property value of the above-mentioned drainage fluid.

[0032] According to one aspect of the present invention, a substrate is held and supported by a substrate holding support member, and

[0033] A substrate cleaning member is slidably brought into contact with the substrate supported thereon, and the substrate is cleaned using a first cleaning liquid supplied from a first nozzle.

[0034] In a retracted position spaced apart from the substrate holding support, a self-cleaning member is slidably brought into contact with the substrate cleaning member, and the substrate cleaning member is self-cleaned using a second cleaning liquid supplied from a second nozzle.

[0035] The physical property value of the drain of the second cleaning solution used for self-cleaning of the above substrate cleaning member is measured, and

[0036] A method for estimating the number of fine particles attached to a substrate is provided, which estimates the number of fine particles attached to the cleaned substrate based on the physical property value of the drainage solution.

[0037] According to one aspect of the present invention, a substrate is held and supported by a substrate holding support member, and

[0038] A substrate cleaning member is slidably brought into contact with the substrate supported thereon, and the substrate is cleaned using a first cleaning liquid supplied from a first nozzle.

[0039] In a retracted position spaced apart from the substrate holding support, a self-cleaning member is slidably brought into contact with the substrate cleaning member, and the substrate cleaning member is self-cleaned using a second cleaning liquid supplied from a second nozzle.

[0040] The total organic carbon concentration of the drainage of the second cleaning solution used for self-cleaning of the substrate cleaning member is measured, and

[0041] A method for determining the degree of contamination of a substrate cleaning member is provided, which determines the degree of contamination of the substrate cleaning member based on the total organic carbon concentration of the drainage solution.

[0042] According to another aspect of the present invention, a self-cleaning member is slidably contacted with a substrate cleaning member before substrate cleaning is performed, and a break-in treatment of the substrate cleaning member is performed using a cleaning liquid supplied from a nozzle.

[0043] Measure the physical property values ​​of the drainage of the cleaning solution used in the above break-in treatment, and

[0044] A method for determining whether a break-in treatment is appropriate is provided, based on the physical property value of the above-mentioned drainage. Effects of the invention

[0045] The degree of contamination of the cleaning component can be monitored. In addition, the number of fine particles attached to the substrate can be estimated. Brief explanation of the drawing

[0046] FIG. 1 is a plan view illustrating the overall configuration of a substrate processing device equipped with a substrate cleaning device according to one embodiment. FIG. 2 is a perspective view showing the entire first cleaning unit (4). FIG. 3 is a schematic diagram illustrating the configuration of the self-cleaning unit (45) in the first cleaning unit (4). FIG. 4 is a schematic diagram illustrating the configuration of a self-cleaning drainage detection unit (454). FIG. 5a is a graph schematically illustrating the output of physical property values ​​measured at the self-cleaning drainage detection unit (454). FIG. 5b is a graph schematically illustrating the output of physical property values ​​measured at the self-cleaning drainage detection unit (454). FIG. 6 is a flowchart illustrating an example of a processing operation by a control unit (11). FIG. 7 is a flowchart illustrating another example of a processing operation by the control unit (11). FIG. 8 is a perspective view showing the entire second cleaning unit (5). FIG. 9 is a perspective view illustrating the configuration of the self-cleaning unit (55) in the second cleaning unit (5). Specific details for implementing the invention

[0047] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0048] FIG. 1 is a plan view illustrating the overall configuration of a substrate processing device equipped with a substrate cleaning device according to one embodiment. This substrate processing device processes substrates such as semiconductor substrates and can be used in the manufacturing process of memory devices, logic devices, image sensors such as CMOS or CCD, and flat panel displays.

[0049] A substrate processing device is provided with a rectangular housing (1) and a load port (2) for loading a substrate cassette, and the load port (2) is positioned adjacent to the housing (1). Additionally, the substrate processing device is provided with a polishing unit (3a to 3d) (substrate polishing device), a first cleaning unit (4) (substrate cleaning device), a second cleaning unit (5) (substrate cleaning device), a drying unit (6), and a control unit (11) for controlling the movement of each unit and each device, all provided inside the housing (1).

[0050] Additionally, the housing (1) is divided into an area (1A) close to the load port (2) and an area (1B) where the polishing unit (3a to 3d), the first cleaning unit (4), the second cleaning unit (5) and the drying unit (6) are provided.

[0051] The polishing units (3a to 3d) polish and flatten the main surface of the substrate. The polishing units (3a to 3d) polish the main surface of the substrate using a suspension (slurry) containing abrasive particles and a polishing aid. As a result, the suspension or polishing debris adheres to the surface and back of the substrate after polishing as contaminants.

[0052] The first cleaning unit (4) performs a first cleaning of the substrate after polishing, and the second cleaning unit (5) performs a final cleaning of the substrate after the first cleaning. Specifically, these first cleaning unit (4) and second cleaning unit (5) remove contaminants attached to the substrate during polishing treatment by scrubbing the substrate using a substrate cleaning member while supplying a cleaning solution to the substrate.

[0053] The drying unit (6) dries the substrate after the final cleaning. Specifically, the drying unit (6) removes droplets of cleaning solution attached to the substrate by the cleaning process.

[0054] In the housing (1), polishing units (3a to 3d) are arranged along the longitudinal direction of the substrate processing device. Additionally, a first cleaning unit (4), a second cleaning unit (5), and a drying unit (6) are also arranged along the longitudinal direction of the substrate processing device.

[0055] A first substrate transport robot (7) is positioned in the area (1B) surrounded by the load port (2), the polishing unit (3a), and the drying unit (6). Additionally, a substrate transport unit (8) is positioned that extends parallel to the arrangement of the polishing units (3a to 3d). Furthermore, a second substrate transport robot (9) is positioned between the first cleaning unit (4) and the second cleaning unit (5). Additionally, a third substrate transport robot (10) is positioned between the second cleaning unit (5) and the drying unit (6).

[0056] The first substrate return robot (7) receives the substrate before polishing from the load port (2) and transfers it to the substrate return unit (8), and also receives the substrate after drying from the drying unit (6) and returns it to the load port (2).

[0057] The substrate return unit (8) returns the substrate received from the first substrate return robot (7) and transfers the substrate between the polishing units (3a to 3d). That is, the polishing return unit (8) receives the substrate after polishing from the polishing units (3a to 3d).

[0058] The second substrate transport robot (9) receives the substrate after polishing from the substrate transport unit (8) and transfers it to the first cleaning unit (4), and receives the substrate after the first cleaning from the first cleaning unit (4) and transfers it to the second cleaning unit (5).

[0059] The third substrate transfer robot (10) receives the substrate after final cleaning from the second cleaning unit (5) and transfers it to the drying unit (6).

[0060] FIG. 2 is a perspective view showing the entire first cleaning unit (4). The first cleaning unit (4) has a spin chuck (41) (substrate holding support), a cleaning roller (42), a cleaning liquid nozzle (43), a support column (44), and a self-cleaning unit (45).

[0061] The spin chuck (41) rotates the substrate (W) by holding and supporting it horizontally so that its main surface is upward (upper surface). Specifically, the spin chuck (41) has a fixed spindle (41a) and a piece (41b) that is rotatably provided on the spindle (41a) and holds and supports the outer periphery of the substrate (W). Then, the rotational force of the piece (41b) is transmitted to the outer periphery of the substrate (W), causing the substrate (W) to rotate within a horizontal plane.

[0062] The cleaning roller (42) is cylindrical in shape and rotates around an axis parallel to the surface of the substrate (W). A roll-shaped cleaning member (42a) (substrate cleaning member) is wound around the cleaning roller (42). The material of the cleaning member (42a) is a PVA sponge, etc. Other materials such as polyurethane sponge and silicone rubber sponge can also be considered as the material of the cleaning member (42a), but it is preferable to use a resin with high hydrophilicity. In addition, although FIG. 2 shows one cleaning roller (42) in contact with the upper surface of the substrate (W), the first cleaning unit (4) may also have an additional cleaning roller in contact with the lower surface of the substrate (W).

[0063] The cleaning solution nozzle (43) supplies a cleaning solution to the upper surface of the substrate (W) held and supported by the spin chuck (41). The cleaning solution is, for example, a chemical solution or pure water. Also, although FIG. 2 shows one cleaning solution nozzle (43) supplying a cleaning solution to the upper surface of the substrate (W), the first cleaning unit (4) may also have an additional cleaning solution nozzle supplying a cleaning solution to the lower surface of the substrate (W). Additionally, there may be two or more cleaning solution nozzles (43) supplying a cleaning solution to the upper surface. In that case, one can be used for the chemical solution and the other for the pure water.

[0064] The support column (44) supports the cleaning roller (42) and moves the cleaning roller (42) in the X direction (a direction perpendicular to the length direction of the cleaning roller (42)) and the Z direction (vertical direction) in the drawing. As the support column (44) moves in the X direction, the cleaning roller (42) moves between the position where the spin chuck (41) is provided (cleaning position) and the position where the self-cleaning unit (45) is provided (retreat position). Additionally, as the support column (44) moves in the Z direction at the cleaning position, the cleaning roller (42) comes into contact with or is separated from the substrate (W). Additionally, as the support column (44) moves in the Z direction at the retreat position, the cleaning roller (42) comes into contact with or is separated from the quartz plate (451) (described later) of the self-cleaning unit (45).

[0065] The self-cleaning unit (45) self-cleans the cleaning member (42a) in a retracted position spaced apart from the spin chuck (41). Details of the self-cleaning unit (45) will be described later using FIG. 3.

[0066] The first cleaning unit (4) of this configuration operates as follows under the control of the control unit (11). Additionally, before substrate cleaning is performed, the cleaning roller (42) waits in the retracted position.

[0067] First, a substrate (W) that has undergone polishing treatment in any of the polishing units (3a to 3d) of FIG. 1 is conveyed onto a spin chuck (41) by a second substrate conveying robot (9). Contaminants are attached to this substrate (W). The substrate (W) conveyed onto the spin chuck (41) is rotated by the piece (41b) of the spin chuck (41), and a cleaning liquid is supplied from a cleaning liquid nozzle (43) toward the vicinity of the center of the substrate (W). Then, by the operation of the support column (44), the cleaning roller (42) moves from the self-cleaning unit (45) (retracted position) to the upper part of the substrate (W) (cleaning position) and descends while rotating.

[0068] Scrub cleaning is initiated by sliding contact and relative movement of the cleaning member (42a) with the upper surface of the substrate (W). Through this scrub cleaning, contaminants attached to the upper surface of the substrate are removed. Some of the contaminants removed from the upper surface of the substrate (W) remain on the cleaning member (42a). Additionally, the cleaning solution contaminated by the substrate cleaning may remain on the cleaning member (42a) as a contaminant. After a predetermined time has elapsed, the scrub cleaning is terminated by the support column (44) rising and separating the cleaning member (42a) from the substrate (W).

[0069] After the cleaning of one substrate is completed, the cleaning roller (42) moves from above the substrate (W) to the self-cleaning unit (45) by the operation of the support column (44). Then, as described below, the self-cleaning unit (45) self-cleans the cleaning member (42a) to remove contaminants remaining on the cleaning member (42a).

[0070] Additionally, the first cleaning unit (4) holds and supports the substrate (W) in a horizontal direction and rotates it, but a self-cleaning unit (45) is provided at a retracted position spaced apart from the substrate holding support, and the form of the substrate holding support is not limited to a horizontal arrangement but may be a vertical arrangement.

[0071] FIG. 3 is a schematic diagram illustrating the configuration of the self-cleaning unit (45) in the first cleaning unit (4).

[0072] The self-cleaning unit (45) has a quartz plate (451) (self-cleaning member) supported on a base (451a) and a self-cleaning liquid nozzle (452) that supplies a cleaning liquid (e.g., a chemical solution or pure water) to the upper surface of the quartz plate (451).

[0073] In addition, as a self-cleaning member, instead of a quartz plate, a resin plate such as PFA (Poly Tetra Fluoro Etylene), PVDF (Poly Vinylidene DiFluoride), or PET (Polyethyleneterephthalate) can be considered, but it is preferable to use a material that has hardness that is resistant to scratching on the surface, resistance to deformation, and chemical stability (no leaching of metals or organic substances, and resistance to thermal degradation).

[0074] The self-cleaning liquid nozzle (452) has a cylindrical nozzle support (452a) and a conduit (452b) embedded inside it. Examples of types of the self-cleaning liquid nozzle (452) include a single-tube nozzle, a line nozzle, a conical nozzle, and a bar nozzle.

[0075] As described above, when the cleaning of one substrate is completed, the cleaning roller (42) is moved to the self-cleaning unit (45). Then, the cleaning roller (42) rotates and descends by the operation of the support column (44) (Fig. 2). As the cleaning member (42a) slides into contact with the upper surface of the quartz plate (451), self-cleaning of the cleaning member (42a) is performed using the cleaning liquid from the self-cleaning liquid nozzle (452). Through this self-cleaning, contaminants remaining on the cleaning member (42a) are removed and discharged together with the cleaning liquid. After a predetermined time has elapsed, the support column (44) rises and the cleaning member (42a) is separated from the quartz plate (451), thereby ending the self-cleaning. Additionally, after the completion of substrate cleaning, the self-cleaning process may be started while the cleaning member (42a) is still wet.

[0076] Additionally, the self-cleaning unit (45) has a self-cleaning fluid drainage pipe (453) and a self-cleaning fluid drainage detection unit (454).

[0077] The self-cleaning liquid drainage pipe (453) is provided below the quartz plate (451) to discharge the drainage (cleaning liquid containing contaminants) flowing out from the upper surface of the quartz plate (451) to the outside of the first cleaning unit (4). The self-cleaning liquid drainage detection unit (454) measures the physical property value (water quality) of the drainage flowing through the self-cleaning liquid drainage pipe (453).

[0078] In detail, the self-cleaning fluid drainage pipe (453) has a drainage receiving portion (453a), a main pipe (453b), and branch pipes (453c, 453d) branched from the main pipe (453b). And, a self-cleaning fluid drainage detection portion (454) is provided between the branch pipes (453c, 453d).

[0079] The drainage receiving portion (453a) has a bottom surface to which a main pipe (453b) is connected to a drainage groove (453e) on the bottom surface, and a side wall extending upward from the outer periphery of the bottom surface. A support (451a) is loaded on the bottom surface. It is preferable that the bottom surface be sloped downward toward the main pipe (453b) so that the drainage can easily flow into the main pipe (453b). Additionally, it is preferable that the side wall extend to a position higher than the quartz plate (451) so that the drainage does not scatter.

[0080] The main pipe (453b) extends vertically downward from the drainage receiving section (453a), bends downward, and extends horizontally. The branch pipe (453c) branches off from the upstream portion (the portion extending horizontally) of the main pipe (453b) and is connected to the liquid inlet of the self-cleaning drainage detection section (454). Additionally, the branch pipe (453d) branches off from the downstream portion of the main pipe (453b) and is connected to the liquid outlet of the self-cleaning drainage detection section (454).

[0081] When the drainage flows through the main pipe (453b), at least a portion of it flows into the branch pipe (453c) and also into the self-cleaning drainage detection unit (454). The drainage, whose physical properties are measured by the self-cleaning drainage detection unit (454), passes through the branch pipe (453d) and joins the main pipe (453b).

[0082] FIG. 4 is a schematic diagram illustrating the configuration of a self-cleaning drainage detection unit (454). The self-cleaning drainage detection unit (454) has a flow regulator (4541), a sensor (4542), a measurement controller (4543), a flushing water supply pipe (4544), and a three-way valve (4545). The control unit (11) and the measurement controller (4543) are connected via a communication cable (455a), and the measurement controller (4543) and the sensor (4542) are connected via a measurement control cable (455b).

[0083] The flow regulator (4541) regulates the amount of drainage flowing from the branch pipe (453c) to the sensor (4542). For example, the flow regulator (4541) is composed of a flow measurement sensor, a valve, and a controller that is equipped with a CLC function to receive a signal from the flow measurement sensor and adjust the degree of valve opening. Additionally, the flow regulator (4541) acts as a bellows pump (a pump that alternately performs suction and extrusion), and the drainage from the sensor (4542) is returned to the main pipe (453b) through the branch pipe (453d).

[0084] The sensor (4542) measures the physical properties of the drainage flowing in from the branch pipe (453c). The sensor (4542) may quantify the degree of contamination (amount of contamination) of the drainage at a predetermined time corresponding to the time of measurement from the measured physical properties. Specific examples of physical properties will be described later.

[0085] The measurement controller (4543) controls the measurement conditions in the sensor (4542) through the measurement control cable (455b) and outputs the physical property value measured by the sensor (4542) and the time of measurement as logging data to the control unit (11) through the communication cable (455a). The output signal may include sensor abnormality alarms such as the completion of preparation for measurement operation (contact) or leakage. Additionally, a signal indicating the start and stop of measurement operation is input to the measurement controller (4543) from the control unit (11) through the communication cable (455a).

[0086] The control unit (11) determines the degree of contamination (amount of contamination) of the cleaning member (42a) based on the measured physical property value. Here, the degree of contamination refers to how much the measured physical property value deviates from a target value (ideal value) set by the user in advance. As a specific example, if the physical property value is within a predetermined normal range, the control unit (11) may determine that the degree of contamination of the cleaning member (42a) is within an acceptable range. Additionally, if the physical property value is not within a predetermined normal range, the control unit (11) may determine that the degree of contamination of the cleaning member (42a) is not within an acceptable range.

[0087] Since the normal range depends on the process type (Cu, STI, etc.) or the design rules of the semiconductor device, the normal range is set by generating a set empirically.

[0088] Additionally, the control unit (11) estimates the cleaning quality of the substrate (W) by applying a predetermined cleaning state estimation algorithm based on the measured physical property values. As a specific example of cleaning quality, the control unit (11) may estimate whether any defects (e.g., number of defects, size of defects, location of defects, components of defects (abrasive particles, organic matter, residual chemical solution, etc.)) have occurred on the substrate due to the substrate (W) being cleaned using a cleaning member (42a). Hereinafter, as an example, cleaning quality is defined as the number of fine particles (defects) attached to the substrate (W).

[0089] The cleaning state estimation algorithm may store the correlation between past defects (which may be measured by a defect inspection device) and physical property values ​​in a database in advance, and use said database to estimate defects from physical property values. Alternatively, the cleaning state estimation algorithm may machine learn the correlation between past defects and physical property values ​​in advance, and use artificial intelligence to estimate defects, defect size, defect location, and defect (contamination) components (abrasive particles, organic matter, residual chemical solution, etc.) from physical property values.

[0090] As a simple example, if the measured physical property value is within a predetermined normal range, the control unit (11) determines that the cleaning quality is good (specifically, that the number of defects on the surface of the substrate after cleaning treatment is low). If the measured physical property value is not within the predetermined normal range, the control unit (11) determines that the cleaning quality is not good. Alternatively, depending on how far the measured physical property value deviates from the predetermined normal range, the control unit (11) may estimate the number of defects occurring on the cleaned substrate.

[0091] Additionally, the control unit (11) may determine the operating conditions for self-cleaning the cleaning member (42a) by applying a predetermined self-cleaning operating condition determination algorithm based on the measured physical property values. The operating conditions include, for example, the pressure load or rotational speed of the cleaning roller (42), the pressure load or rotational speed of the cleaning port (52), the flow rate of the cleaning liquid supplied from the self-cleaning liquid nozzle (452), the temperature, the selection of water or chemical liquid, and the setting time for self-cleaning.

[0092] The self-cleaning operation condition determination algorithm may store the correlation between physical property values ​​and appropriate operation conditions in a database in advance and use said database to estimate appropriate operation conditions based on physical property values. Alternatively, the self-cleaning operation condition determination algorithm may machine learn the correlation between physical property values ​​and appropriate operation conditions in advance and use artificial intelligence to estimate appropriate operation conditions based on physical property values.

[0093] Additionally, the control unit (11) may determine the operating conditions for performing substrate cleaning by applying a predetermined substrate cleaning operating condition determination algorithm based on the measured physical property value. The operating conditions are, for example, the pressure load or rotational speed of the cleaning roller (42), the pressure load or rotational speed of the cleaning hole (52), the rotational speed of the spin chuck (41), the flow rate of the cleaning liquid supplied from the cleaning liquid nozzle (43), the temperature, the selection of water or chemical liquid, the time for scrub cleaning, the time for chemical rinsing, the time for water rinsing, etc.

[0094] The substrate cleaning operation condition determination algorithm may store the correlation between physical property values ​​and appropriate operation conditions in a database in advance and use said database to estimate appropriate operation conditions based on physical property values. Alternatively, the substrate cleaning operation condition determination algorithm may machine learn the correlation between physical property values ​​and appropriate operation conditions in advance and use artificial intelligence to estimate appropriate operation conditions based on physical property values.

[0095] Additionally, the control unit (11) may determine the replacement time of the cleaning member (42a) by applying a predetermined replacement time determination algorithm based on the measured physical property value.

[0096] The replacement timing determination algorithm may store the correlation between material properties and replacement timing in a database in advance and use said database to estimate the replacement timing from the material properties. Alternatively, the replacement timing determination algorithm may machine learn the correlation between material properties and replacement timing in advance and use artificial intelligence to estimate the replacement timing from the material properties.

[0097] Here, an example of a physical property value measured by a sensor (4542) is provided.

[0098] The sensor (4542) includes a fine particle measuring device in the liquid, and the physical property value may be the number of fine particles in the drainage liquid. If there is not that much polishing debris remaining in the cleaning member (42a) (i.e., if the degree of contamination of the cleaning member (42a) is low), the number of fine particles measured by the fine particle measuring device in the liquid is small. On the other hand, if a large amount of polishing debris remains in the cleaning member (42a) (i.e., if the degree of contamination of the cleaning member (42a) is high), the number of fine particles measured by the fine particle measuring device in the liquid increases. Therefore, the degree of contamination of the cleaning member (42a) can be determined based on the number of fine particles in the drainage liquid.

[0099] Additionally, the sensor (4542) includes a pH meter, and the physical property value may be the pH value of the drainage liquid. The suspension used for polishing is assumed to be alkaline. When there is not that much suspension remaining on the cleaning member (42a) (i.e., when the degree of contamination of the cleaning member (42a) is low), the pH value measured by the pH meter is slightly greater than 7. On the other hand, when a large amount of suspension remains on the cleaning member (42a) (i.e., when the degree of contamination of the cleaning member (42a) is high), the pH value measured by the pH meter is greater than 7. Therefore, the degree of contamination of the cleaning member (42a) can be determined based on the pH value of the drainage liquid.

[0100] In addition, the same applies when the cleaning agent used to clean the substrate is alkaline. That is, when there is not that much cleaning solution remaining in the cleaning member (42a), the pH value measured by the pH meter is close to 7, and when there is a lot of cleaning solution remaining, the pH measured by the pH meter increases.

[0101] Additionally, the sensor (4542) may include an electrical conductivity meter, and the physical property value may be the electrical conductivity of the drainage liquid. The suspension used for polishing is to contain ions (cations, anions). When there is not that much suspension remaining on the cleaning member (42a) (i.e., when the degree of contamination of the cleaning member (42a) is low), the electrical conductivity shows a low value. Conversely, when there is a lot remaining, the electrical conductivity shows a high value. If the cleaning solution is also to contain ions, the same applies. Therefore, the degree of contamination of the cleaning member (42a) can be determined based on the electrical conductivity of the drainage liquid.

[0102] Additionally, the sensor (4542) may include a carbon concentration meter, and the physical property value may be the total organic carbon concentration of the drainage. The suspension used for polishing is to contain organic compounds (water-soluble polymers, rust inhibitors, surfactants). If the amount of suspension remaining on the cleaning member (42a) is not sufficient (i.e., if the degree of contamination of the cleaning member (42a) is low), the total organic carbon concentration shows a low value. Conversely, if a large amount remains, the total organic carbon concentration shows a high value. If the cleaning solution is also to contain organic compounds, the same applies. Therefore, the degree of contamination of the cleaning member (42a) can be determined based on the total organic carbon concentration of the drainage.

[0103] Additionally, the physical property value may be another physical property value related to the degree of contamination of the cleaning member (42a), or a combination of two or more physical property values.

[0104] However, when measuring the drainage normally, contaminants in the drainage may accumulate on the sensor (4542) over time, resulting in an error in the measurement value. To prevent this measurement error, it is desirable to clean the sensor (4542) by supplying flushing water (e.g., pure water) from the flushing water supply pipe (4544) through the valve (three-way valve) (4545) at regular intervals.

[0105] For example, when flushing is performed at the timing of replacing the substrate cleaning member (42a) and the sensor (4542) detects the number of particulates, the number of particulates before and after flushing is as shown in FIG. 5a.

[0106] FIG. 5b is a graph schematically illustrating the output of physical property values ​​measured by the self-cleaning drainage detection unit (454). FIG. 5b is illustrated as an example in which the sensor (4542) is a liquid-in-particle measuring instrument KS-18F manufactured by Lion Co., Ltd., the measuring controller (4543) is a KE-40B1 manufactured by the same company, and the flow regulator (4541) is a bellows sampler K9904A manufactured by the same company.

[0107] The horizontal axis of the graph represents the time of measurement, and the vertical axis represents the number of particulates in the liquid per unit volume of the drainage (hereinafter simply referred to as "number of particulates"). A higher value for the number of particulates indicates a higher degree of contamination (a larger amount of contamination) in the drainage.

[0108] In this embodiment, the cleaning roller (42) alternately performs scrub cleaning on the substrate (W) and self-cleaning in the self-cleaning unit (45). Specifically, self-cleaning is performed during periods T1, T3, and T5, and scrub cleaning of substrates Wa, Wb, and Wc is performed during periods T2, T4, and T6, respectively. Additionally, Wa to Wc may each refer to a single substrate or multiple substrates.

[0109] In self-cleaning during period T1, immediately after the start of self-cleaning at time t1 to t2, contaminants attached to the cleaning member (42a) flow out as drainage. As a result, the number of fine particles temporarily increases significantly and exceeds the normal range.

[0110] However, after time t2, as the cleaning member (42a) becomes cleaner with the passage of time for self-cleaning, the number of particulates in the drainage gradually decreases and soon reaches a normal range at time t3. Then, self-cleaning is completed at time t4. Then, scrub cleaning of the substrate (Wa) is initiated while the number of particulates is within the normal range. At this time, the control unit (11) can determine, based on the number of particulates at time t4, that cleaning of the substrate Wa is performed while the degree of contamination of the cleaning member (42a) is within an acceptable range.

[0111] During the time period t4 to t5 (period T2) when the substrate Wa is scrub-cleaned, the number of fine particles converges to a constant value because no contaminants from the cleaning member (42a) are introduced into the self-cleaning unit (45).

[0112] At time t5 to t6 (period T3), self-cleaning of the cleaning member (42a) is performed in the same manner as in period T1. In the example of FIG. 5b, self-cleaning is completed at period T3 (time t6) while the number of fine particles is within the normal range, and scrub cleaning of the substrate Wb is performed at period T4. At this time, the control unit (11) can determine, based on the number of fine particles at time t6, that cleaning of the substrate Wb is performed while the degree of contamination of the cleaning member (42a) is within the allowable range.

[0113] During time t7 to t8 (period T5), self-cleaning of the cleaning member (42a) is performed in the same manner as during period T1. However, in the example of FIG. 5b, the number of fine particles does not decrease to a normal range during period T5. This means that the degree of contamination of the cleaning member (42a) is high and not within the allowable range. Then, self-cleaning is completed (time t9) when the number of fine particles exceeds the normal range, and cleaning of the substrate Wc is performed during period T6. At this time, the control unit (11) can determine, based on the number of fine particles at time t9, that cleaning of the substrate Wc was performed when the degree of contamination of the cleaning member (42a) was not within the allowable range.

[0114] In addition, the completion of self-cleaning is based on the cleaning process recipe. That is, when a certain amount of time has elapsed since the start of self-cleaning, the self-cleaning is timed up and completed in order to start the cleaning process of the next substrate.

[0115] As such, in the example of FIG. 5b, it is shown that the number of fine particles did not reach the normal range during self-cleaning (period T5) performed immediately before cleaning (period T6) of the substrate Wc. That is, the self-cleaning of the cleaning member (42a) was insufficient, and the cleaning process of the substrate Wc was initiated while a large amount of contaminants remained on the cleaning member (42a). Therefore, there is a high risk of back-contamination to the substrate Wc. The control unit (11) detects this high risk of back-contamination as an abnormality. Then, the control unit (11) performs control processing, such as an alarm, depending on the degree of abnormality as necessary.

[0116] For example, if the degree of abnormality is level 1 (abnormality in hardness, single substrate), it may be noted that there is a possibility of a higher number of defects compared to other substrates.

[0117] If the degree of the above is level 2 (above hardness, two or more sheets in succession), the control unit (11) may be instructed to change the operating conditions of self-cleaning or substrate cleaning.

[0118] If the degree of abnormality is Level 3 (moderate abnormality, single substrate), you may order to perform a defect inspection, perform a re-cleaning treatment, or exclude it as a defective product.

[0119] If the degree of abnormality is level 4 (moderate abnormality, two or more consecutive), the polishing and cleaning process in the substrate processing device may be stopped, and the control unit (11) may be instructed to replace the cleaning member (42a).

[0120] In addition, Figure 5b is an example where the physical property value is the number of fine particles, but the same behavior occurs when the physical property value is pH, electrical conductivity, or total organic carbon concentration. Also, when the physical property value is pH, the pH value converges to nearly 7 (neutral) during the period T2, etc., when self-cleaning is not performed.

[0121] FIG. 6 is a flowchart illustrating an example of a processing operation by a control unit (11). FIG. 6 is a sequence of operations in a complete standby state (a state in FIG. 1 in which the cassette containing the substrate is not loaded into the load port (2) of the substrate processing device, and the polishing, cleaning, and drying of the substrate are not all performed, prior to time t1 in FIG. 5b). Additionally, although the control unit (11) is provided by the substrate processing device, it can be said that the first cleaning unit (4) is provided by the control unit (11) in that it controls each part of the first cleaning unit (4).

[0122] The control unit (11) initiates the measurement of the physical properties of the drainage by the sensor (4542) of the self-cleaning drainage detection unit (454) while the cleaning roller (42) is positioned in the self-cleaning unit (45). Then, the output of the sensor (4542) is output through the measurement controller (4543), and the control unit (11) reads this (step S1).

[0123] If the read physical property value is within the normal range ("Yes" in Step S2), the cleaning member (42a) is sufficiently cleaned, so appropriate cleaning treatment of the substrate is possible. Accordingly, the control unit (11) determines that preparation for substrate treatment including cleaning is ready (Step S3).

[0124] Meanwhile, if the read physical property value is not within the normal range ("No" in Step S2), contaminants are deposited on the cleaning member (42a) and cleaning is insufficient. Accordingly, the control unit (11) makes an additional judgment based on the self-cleaning situation.

[0125] That is, if the duration from the start of self-cleaning is shorter than a predetermined upper limit time ("Yes" in Step S4), the control unit (11) continues self-cleaning of the cleaning member (42a) (Step S5) and returns to the physical property value reading process (Step S1). Additionally, the cleaning duration of the cleaning member (42a) is determined by the control unit (11). Furthermore, the duration from the start of self-cleaning is the total cleaning time (cumulative time) after replacement with a new cleaning member (42a), and it is not reset even if the self-cleaning task is completed once (i.e., it is reset when replaced with a new cleaning member (42a)).

[0126] Meanwhile, if the duration of self-cleaning from the start of self-cleaning exceeds a predetermined upper limit time ("No" in Step S4), it is highly likely that the cleanliness of the cleaning member (42a) will not improve even if self-cleaning is continued. Therefore, the control unit (11) stops self-cleaning and determines that the cleaning roller (42) needs to be replaced (Step S6). As a specific example, the control unit (11) outputs a message or warning indicating that the cleaning roller (42) needs to be replaced, and instructs the replacement with a new cleaning roller (42).

[0127] The above series of treatments is continued until the physical property value reaches the normal range.

[0128] FIG. 7 is a flowchart illustrating another example of a processing operation by the control unit (11). FIG. 7 is a sequence of operations in a processing state (in FIG. 1, a cassette for receiving a substrate is loaded into the load port (2) of the substrate processing device, and a substrate is present in any of the polishing unit (3a to 3d), the first cleaning unit (4), the second cleaning unit (5), the drying unit (6), the substrate transport robot (22, 26, 28), and the substrate transport unit (8).

[0129] Similar to the above-described complete standby state (Fig. 6), the control unit (11) initiates the measurement of the physical properties of the drainage by the sensor (4542) of the self-cleaning drainage detection unit (454) while the cleaning roller (42) is positioned in the self-cleaning unit (45). Then, the output of the sensor (4542) is output through the measurement controller (4543), and the control unit (11) reads this (step S11).

[0130] If the read physical property value is within the normal range ("Yes" in Step S12), the control unit (11) estimates the quality of the substrate cleaning based on a database showing the correlation between the physical property value and the defect (Step S13). As a specific example, the control unit (11) estimates the number of defects in the substrate after processing.

[0131] Meanwhile, if the read physical property value is not within the normal range ("No" in Step S12), the cleaning member (42a) has accumulated contaminants and is insufficiently cleaned. Accordingly, the control unit (11) makes an additional determination based on the operating status of the cleaning member (42a).

[0132] That is, when the cleaning member (42a) is in contact with the upper surface of the substrate (the "example" of step S14), or in other words, when the cleaning member (42a) is in a cleaning position and is performing substrate cleaning (for example, any of periods T2, T4, and T6 of FIG. 5b), the control unit (11) determines that there is a high risk of reverse contamination from the cleaning member (42a) to the substrate and outputs an alarm for a process abnormality of the substrate (step S15). In addition, the control unit (11) estimates the quality of the substrate cleaning based on a database showing the correlation between physical property values ​​and defects (step S13).

[0133] Meanwhile, when the cleaning member (42a) is not in contact with the upper surface of the substrate ("No" in step S14), in other words, when the cleaning member (42a) is in a retracted position and is performing self-cleaning (e.g., any of periods T1, T3, T5 in FIG. 5b), the control unit (11) determines that the risk of reverse contamination has been avoided and continues the self-cleaning of the cleaning member (42a) and the reading of the physical property value (step S11).

[0134] In addition, since the control unit (11) controls the first cleaning unit (4), in step S14, the control unit (11) can determine whether the cleaning member (42a) is in the cleaning position or the retracted position.

[0135] The series of treatments described above is performed on all input substrates.

[0136] In this way, according to the present embodiment, the physical property value of the drainage is measured when the cleaning member (42a) is self-cleaned. Accordingly, the degree of contamination of the cleaning member (42a) can be monitored in-line based on the physical property value. In addition, the quality of the substrate cleaning can be estimated based on the physical property value (or the degree of contamination of the cleaning member (42a)).

[0137] In addition, the above was to monitor the degree of contamination of the roll-type cleaning member (42a) or to estimate the quality of substrate cleaning in the self-cleaning unit (45) of the first cleaning unit (4) of FIG. 1. In contrast, the same can be done for the second cleaning unit (5) or for a cleaning member that is not roll-type. Hereinafter, the second cleaning unit (5) will be described as using a pencil-type cleaning member.

[0138] FIG. 8 is a perspective view illustrating the entire second cleaning unit (5). The second cleaning unit (5) has a spin chuck (51) (substrate holding support), a cleaning port (52), a cleaning liquid nozzle (53), a oscillating arm (54), and a magnetic cleaning unit (55).

[0139] The spin chuck (51) holds and supports the substrate (W) horizontally so that its main surface is upward (upper surface) and rotates horizontally at a predetermined number of rotations.

[0140] The cleaning unit (52) has a pencil-shaped cleaning member (52a) (substrate cleaning member) installed at its tip and rotates the cleaning member (52a). The material of the cleaning member (52a) is a PVA sponge, etc.

[0141] The cleaning solution nozzle (53) supplies a cleaning solution to the upper surface of the substrate (W) held and supported by the spin chuck (51). The cleaning solution is, for example, a chemical solution or pure water.

[0142] A oscillating arm (54) has a cleaning port (52) installed at its tip via a support shaft (52b) and oscillates and raises the cleaning port (52). That is, the self-cleaning unit (55) is positioned on the oscillating trajectory drawn by the cleaning port (52) by the oscillation of the oscillating arm (54), and as the oscillating arm (54) oscillates, the cleaning member (52a) moves between the position where the spin chuck (51) is provided (cleaning position) and the position where the self-cleaning unit (55) is provided (cleaning position). In addition, as the oscillating arm (54) raises and lowers at the cleaning position, the cleaning member (52a) comes into contact with or separates from the substrate (W). In addition, as the oscillating arm (54) raises and lowers at the retracted position, the cleaning member (52a) comes into contact with or separates from the quartz plate (551) (described later) of the self-cleaning unit (55).

[0143] The second cleaning unit (5) of this configuration operates as follows under the control of the control unit (11). Additionally, before substrate cleaning is performed, the cleaning member (52a) waits in a retracted position.

[0144] First, a substrate that has undergone primary cleaning in the first cleaning unit (4) of FIG. 1 is transported onto a spin chuck (51) by a second substrate transport robot (9). Contaminants are attached to this substrate. As the substrate (W) transported onto the spin chuck (51) is rotated by the spin chuck (51) at a predetermined rotational speed, a cleaning liquid is supplied from a cleaning liquid nozzle (53) toward the vicinity of the center of the substrate (W).

[0145] Then, the oscillating arm (54) rises to remove the cleaning hole (52) from the self-cleaning unit (55), and then oscillates toward the cleaning position to move the cleaning hole (52) to the upper side of the center of the substrate (W). Additionally, when moving the cleaning hole (52) from the self-cleaning unit (55) to the cleaning position, it is preferable that the rotation of the cleaning hole (52) be stopped.

[0146] Next, the oscillating arm (54) descends to bring the lower surface of the cleaning member (52a) into contact with the upper surface of the substrate (W). Just before coming into contact with the substrate (W), the cleaning member (52) begins to rotate around the support shaft (52b) at a predetermined rotational speed. While the cleaning member (52a) is in contact with the upper surface of the substrate (W) and is rotating, the oscillating arm (54) presses the cleaning member (52a) against the substrate (W) with a predetermined pressure, and simultaneously oscillates between the outer periphery and the center of the substrate (W) at a predetermined speed.

[0147] In this way, scrub cleaning is performed by sliding contact and relative movement of the cleaning member (52a) with the upper surface of the substrate (W). Through this scrub cleaning, contaminants attached to the upper surface of the substrate (W) are removed. Some of the contaminants removed from the upper surface of the substrate (W) remain on the cleaning member (52a). Additionally, the cleaning solution contaminated by the substrate cleaning may remain on the cleaning member (52a) as a contaminant. After a predetermined time has elapsed, the oscillating arm (54) stops and then rises to separate the cleaning member (52a) from the substrate (W), thereby ending the scrub cleaning.

[0148] After the cleaning of one substrate is completed, the supply of cleaning solution from the cleaning solution nozzle (53) is stopped, and the cleaning port (52) moves to the self-cleaning unit (55) by the shaking of the shaking arm (54). Then, the shaking arm (54) descends as described below, and the self-cleaning unit (55) self-cleans the cleaning member (52a) to remove contaminants remaining on the cleaning member (52a).

[0149] FIG. 9 is a perspective view illustrating the configuration of a self-cleaning unit (55) in a second cleaning unit (5). The self-cleaning unit (55) has a quartz plate (551) (self-cleaning member) supported on a base (551a) and a self-cleaning liquid nozzle (552) that supplies a cleaning liquid (e.g., a chemical solution or pure water) to the upper surface of the quartz plate (551).

[0150] In addition, as a self-cleaning member, instead of a quartz plate, a resin plate such as PFA (Poly Tetra Fluoro Etylene), PVDF (Poly Vinylidene DiFluoride), or PET (Polyethyleneterephthalate) can be considered, but it is preferable to use a material that has hardness that is resistant to scratching on the surface, resistance to deformation, and chemical stability (no leaching of metals or organic substances, and resistance to thermal degradation).

[0151] The self-cleaning fluid nozzle (552) has a cylindrical nozzle support (552a) and a conduit (552b) embedded inside it.

[0152] As described above, when the cleaning of one substrate is completed, the cleaning member (52) is moved to the self-cleaning unit (55) by the oscillating arm (54) (Fig. 8). Then, the cleaning member (52) rotates and descends by the operation of the oscillating arm (54). As the cleaning member (52a) slides into contact with the upper surface of the quartz plate (551), self-cleaning of the cleaning member (52a) is performed using the cleaning liquid from the self-cleaning liquid nozzle (552). Through this self-cleaning, contaminants remaining on the cleaning member (52a) are removed and discharged together with the cleaning liquid. After a predetermined time has elapsed, the oscillating arm (54) rises and the cleaning member (52a) is separated from the quartz plate (551), thereby ending the self-cleaning.

[0153] Additionally, the self-cleaning unit (55) has a self-cleaning liquid drainage pipe (553) and a self-cleaning drainage detection unit (554). The self-cleaning liquid drainage pipe (553) has a drainage receiving unit (553a) in which a drainage groove (553e) is formed on the lower surface, a main pipe (553b), and branch pipes (553c, 553d) branched from the main pipe (553b). Since these are the same as those in FIGS. 3 and 4, a detailed description is omitted.

[0154] For this second cleaning unit (5), processing operations are performed by the control unit (11) as described in FIGS. 6 and FIGS. 7. Additionally, the configuration of the second cleaning unit (5) may be the same as the configuration of the first cleaning unit (4).

[0155] Each of the above-described embodiments can also be applied to break-in processing (conditioning before starting use of a new substrate cleaning member). Conventionally, after break-in, a new dummy substrate was cleaned, and the number of contaminant particles attached to the dummy substrate was measured to determine whether the break-in was appropriate. However, according to each of the above-described embodiments, it is possible to determine whether the break-in is appropriate without using a new dummy substrate.

[0156] Specifically, a quartz plate (451, 551) is slid into contact with a cleaning member (42a, 52a) before substrate cleaning, and a break-in treatment of the cleaning member (42a, 52a) is performed using a cleaning liquid supplied from a self-cleaning liquid nozzle (452, 552). Then, a sensor (4542) measures the physical property value of the drained cleaning liquid used for the break-in treatment. Additionally, a control unit (11) determines whether the break-in treatment is appropriate based on the physical property value of the drained liquid. As an example of a determination method, if the physical property value of the drained liquid is within a preset normal range, it is determined to be appropriate, and if it exceeds the normal range, it is determined not to be appropriate. Furthermore, the physical property value may likewise be the number of fine particles, pH value, electrical conductivity, total organic carbon concentration, etc. The self-cleaning unit (45, 55) and the control unit (11) can be considered together as a break-in device.

[0157] The above-described embodiments are described for the purpose of enabling a person skilled in the art to practice the present invention. Various modifications of the above embodiments are naturally achievable by those skilled in the art, and the technical concept of the present invention can be applied to other embodiments. Accordingly, the present invention is not limited to the described embodiments but should be defined within the broadest scope according to the technical concept defined by the claims. Explanation of the symbols

[0158] 1: Housing 2: Load Port 3a to 3d: Grinding unit 4: 1st Cleaning Unit 41: Spin Chuck 41a: Spindle 41b: Piece 42: Cleaning roller 42a: Cleaning component 43: Cleaning solution nozzle 44: Support pillars 45: Self-cleaning unit 451: Quartz plate 451a: Stand 452: Self-cleaning fluid nozzle 452a: Nozzle support 452b: Conduit 453: Self-cleaning fluid drainage pipe 453a: Drainage receiving portion 453b: Main pipe 453c, 453d: Branch piping 453e: Drainage groove 454: Self-cleaning drainage detector 4541: Flow regulator 4542: Sensor 4543: Measurement Controller 4544: Flushing water supply piping 4545: Three-way valve 455a: Communication cable 455b: Measurement control cable 5: Second cleaning unit 51: Spin Chuck 52: Cleaning port 52a: Cleaning component 52b: Support axis 53: Cleaning solution nozzle 54: Liaodong Rock 55: Self-cleaning unit 551: Quartz plate 552: Self-cleaning fluid nozzle 553: Self-cleaning fluid drainage pipe 553a: Drainage receiving portion 553b: Main pipe 553c, 553d: Branch piping 554: Self-cleaning drainage detector 6: Drying unit 7: 1st substrate return robot 8: Board return unit 9: Second substrate return robot 10: 3rd board return robot 11: Control unit

Claims

Claim 1 A substrate cleaning device comprising: a substrate holding support member for holding and supporting a substrate; a substrate cleaning member that slides in contact with the held and supported substrate and cleans the substrate using a first cleaning liquid supplied from a first nozzle; a self-cleaning member that slides in contact with the substrate cleaning member at a retracted position spaced apart from the substrate holding support member and self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; a measuring means for measuring the physical property value of the drainage of the second cleaning liquid used for self-cleaning the substrate cleaning member; a control unit for estimating the number of fine particles attached to the cleaned substrate based on the physical property value of the drainage; a first pipe that guides the drainage of the second cleaning liquid used for self-cleaning the substrate cleaning member to the measuring means; a three-way valve provided in the first pipe; and a second pipe that supplies flushing water to the measuring means through the three-way valve. Claim 2 A substrate cleaning device according to claim 1, wherein the physical property value includes one or more of the number of fine particles, pH value, electrical conductivity, and total organic carbon concentration. Claim 3 A substrate cleaning device comprising: a substrate holding support member for holding and supporting a substrate; a substrate cleaning member that slides in contact with the held and supported substrate and cleans the substrate using a first cleaning liquid supplied from a first nozzle; a self-cleaning member that slides in contact with the substrate cleaning member at a retracted position spaced apart from the substrate holding support member and self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; a measuring means for measuring a physical property value of the drainage of the second cleaning liquid used for self-cleaning the substrate cleaning member; a control unit for determining the degree of contamination of the substrate cleaning member based on the physical property value of the drainage; a first pipe that guides the drainage of the second cleaning liquid used for self-cleaning the substrate cleaning member to the measuring means; a three-way valve provided in the first pipe; and a second pipe that supplies flushing water to the measuring means through the three-way valve, wherein the physical property value includes a total organic carbon concentration. Claim 4 In paragraph 3, the control unit estimates the number of fine particles attached to the cleaned substrate based on the physical property value of the drainage solution, in a substrate cleaning device. Claim 5 A substrate cleaning device according to any one of claims 1 to 4, wherein the control unit determines the operating conditions of self-cleaning based on the physical property value of the drainage liquid. Claim 6 A substrate cleaning device according to any one of claims 1 to 4, wherein the control unit determines the operating conditions for substrate cleaning based on the physical property value of the drainage solution. Claim 7 A substrate cleaning device according to any one of claims 1 to 4, wherein the control unit determines the replacement time of the substrate cleaning member based on the physical property value of the drainage. Claim 8 delete Claim 9 A substrate processing apparatus comprising a substrate polishing apparatus that polishes a substrate using a suspension, and a substrate cleaning apparatus described in any one of claims 1 to 4. Claim 10 A break-in device comprising: a self-cleaning member that slides in contact with a substrate cleaning member before performing substrate cleaning and performs a break-in treatment of the substrate cleaning member using a cleaning liquid supplied from a nozzle; a measuring means for measuring the physical property value of the drainage of the cleaning liquid used in the break-in treatment; a control unit for determining whether the break-in treatment is appropriate based on the physical property value of the drainage liquid; a first pipe for guiding the drainage of the cleaning liquid used in the self-cleaning of the substrate cleaning member to the measuring means; a three-way valve provided in the first pipe; and a second pipe for supplying flushing water to the measuring means through the three-way valve. Claim 11 A method for estimating the number of fine particles attached to a substrate, comprising: holding and supporting a substrate by a substrate holding support member; slidingly contacting a substrate cleaning member with the held and supported substrate to clean the substrate using a first cleaning liquid supplied from a first nozzle; slidingly contacting a self-cleaning member with the substrate cleaning member at a retracted position spaced apart from the substrate holding support member to self-clean the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; measuring the physical property value of the drainage of the second cleaning liquid used for self-cleaning the substrate cleaning member by a measuring means; estimating the number of fine particles attached to the cleaned substrate based on the physical property value of the drainage liquid; guiding the drainage of the second cleaning liquid used for self-cleaning the substrate cleaning member to the measuring means through a pipe; and supplying flushing water to the measuring means through a three-way valve provided in the pipe. Claim 12 A method for determining the degree of contamination of a substrate cleaning member, comprising: holding and supporting a substrate by means of a substrate holding support member; slidingly contacting a substrate cleaning member with the held and supported substrate to clean the substrate using a first cleaning liquid supplied from a first nozzle; slidingly contacting a self-cleaning member with the substrate cleaning member at a retracted position spaced apart from the substrate holding support member to self-clean the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; measuring the total organic carbon concentration of the drainage of the second cleaning liquid used for self-cleaning of the substrate cleaning member by means of a measuring means; determining the degree of contamination of the substrate cleaning member based on the total organic carbon concentration of the drainage; guiding the drainage of the second cleaning liquid used for self-cleaning of the substrate cleaning member to the measuring means by means of a pipe; and supplying flushing water to the measuring means through a three-way valve provided in the pipe. Claim 13 A method for determining a break-in treatment, wherein a self-cleaning member is slidably contacted with a substrate cleaning member before substrate cleaning is performed, a break-in treatment of the substrate cleaning member is performed using a cleaning liquid supplied from a nozzle, a physical property value of the drainage of the cleaning liquid used in the break-in treatment is measured by a measuring means, and based on the physical property value of the drainage, whether the break-in treatment is appropriate is determined, the drainage of the cleaning liquid used in the self-cleaning of the substrate cleaning member is guided to the measuring means by a pipe, and flushing water is supplied to the measuring means through a three-way valve provided in the pipe.

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